MEMS / NMES sensor

Abstract

The invention relates to an MEMS / NMES sensor, which can apply a PUF secret key technology and comprises a power supply module, a processor, a storage module, an interface module and a sensor module, the power supply module is used for supplying power to the processor, the storage module, the interface module and the sensor module and comprises a battery and a voltage adjusting module; the processor is electrically connected with the sensor module and is used for controlling the working state of the power supply module, and the processor is also used for responding to a test signal of external test equipment and controlling the change of a driving voltage value output to the sensor module by the power supply module; wherein when the MEMS / NMES sensor is in a test state, the battery is electrically connected with the sensor module through the voltage adjusting module, and when the MEMS / NMES sensor is in a working state, the battery directly supplies power to the sensor module.

Description

Technical Field

[0001] The present application relates to the field of sensor technology, and in particular to a MEMS / NMES sensor. Background Art

[0002] PUF (Physically Unclonable Function) is a security technology based on the physical properties of hardware. It uses the tiny differences naturally occurring during the manufacturing process of the device to generate a unique and difficult-to-copy response to manage the identity of the hardware. The response of each PUF device is unique and cannot be accurately predicted or copied, which makes it important in the fields of the Internet of Things, embedded systems, and cloud computing.

[0003] In the related technology, PUF key technology has been used in some large mobile terminal devices, such as SRAM and DRAM. However, the existing technology lacks application in small devices such as MEMS sensors. Summary of the invention

[0004] One advantage of the present application is that it provides a sensor to which PUF key technology can be applied. By adjusting the voltage applied to the sensor module, the excitation-response pair required by the PUF technology can be obtained, so that the PUF key technology can be implemented on this type of sensor.

[0005] Another advantage of the present application is to provide a MEMS / NMES sensor, wherein in order to achieve the above advantages, no expensive materials or complex structures are required in the present application. Therefore, the solution provided by the present application can successfully and effectively solve the above problems, and not only provides a simple sensor, but also increases the practicality and reliability of the MEMS / NMES sensor.

[0006] Based on this, in order to achieve at least one of the above advantages or other advantages and purposes of the present application, the present application provides a MEMS / NMES sensor, including: a power module, a processor, a storage module, an interface module, and a sensor module; the power module is used to provide power for the processor, the storage module, the interface module, and the sensor module, and the power module includes a battery and a voltage adjustment module; the processor is electrically connected to the sensor module, and is used to calculate the capacitance value of the sensor module, and is used to control the working state of the power module, and the processor is also used to control the change of the driving voltage value output by the power module to the sensor module in response to the test signal of the external test equipment;

[0007] Wherein, when the MEMS / NMES sensor is in a testing state, the battery is electrically connected to the sensor module via the voltage adjustment module, and when the MEMS / NMES sensor is in a working state, the battery directly supplies power to the sensor module.

[0008] With such configuration, the MEMS / NMES sensor obtains the stimulus-response pair required by the PUF technology by applying a driving voltage with different voltage values ​​adjusted to the sensor module and calculating the response parameters of the MEMS / NMES sensor with the aid of the processor.

[0009] According to one embodiment of the present application, the power supply module also includes a first switch module, the voltage adjustment module is electrically connected to the battery through the first switch module, and the first switch module controls the voltage adjustment module to output a corresponding driving voltage in response to a first test signal sent by the processor.

[0010] With such configuration, after receiving the voltage signal sent by the processor, the voltage adjustment module adjusts the driving voltage value applied to the sensor module, so as to lay a foundation for the processor to subsequently calculate the response parameters of the sensor module.

[0011] According to one embodiment of the present application, the voltage adjustment module includes k first voltage output nodes, and a first resistor R1, a first resistor R2...a first resistor Rk connected in series in sequence, k is a positive integer, and a first voltage output node is arranged between two adjacent first resistors. The first switch module responds to the second test signal sent by the processor, and selects to connect the corresponding voltage output node to control the voltage adjustment module to output the corresponding driving voltage.

[0012] With such a configuration, when it is necessary to apply different voltages to the sensor module, different numbers of resistors can be connected according to different needs using the voltage division principle, so that the voltages on different numbers of resistors can be applied to the sensor module, thereby meeting the need to apply different voltages to the sensor module. Compared with the solution using a sliding rheostat, this solution can automatically adjust the voltage output of the pressure simulation structure applied to the sensor module at the hardware or software level, which can reduce labor costs and improve test efficiency.

[0013] According to an embodiment of the present application, the voltage adjustment module is a sliding resistor.

[0014] With such a setting, the resistance value can be changed based on the voltage division principle by the position of the sliding contact of the sliding rheostat on the resistance wire to meet the need of connecting different resistance values ​​in the circuit, thereby applying voltages at different resistance values ​​to the sensor module, thereby meeting the need to apply different voltages to the sensor module, and further obtaining the excitation-response pair required by the PUF technology.

[0015] According to one embodiment of the present application, the power supply module also includes a second switch module and a third switch module, the first end of the second switch module is connected to the positive electrode V+ of the output voltage of the sensor module, and the second end is grounded; the first end of the third switch module is connected to the negative electrode V- of the output voltage of the sensor module, and the second end is grounded; the second switch module is closed in response to the output voltage test signal of V-, and is opened in response to the output voltage test signal of V+; the third switch is closed in response to the output voltage test signal of V+, and is opened in response to the output voltage test signal of V-.

[0016] With such a configuration, the second switch module can be closed or closed in response to the output voltage test signal of V- or V+, and the third switch module can be closed or closed in response to the output voltage test signal of V- or V+, so as to accurately measure the voltage applied to the sensor module at a certain moment. Compared with directly measuring the voltage output to the sensor module, this solution can effectively eliminate the system errors caused by factors such as power supply voltage fluctuations and resistance temperature coefficient, improve measurement accuracy, and can effectively reduce the impact of external electromagnetic interference on the measurement results, so as to improve the accuracy of the measurement of the voltage applied to the sensor module at a certain moment.

[0017] According to one embodiment of the present application, the MEMS / NMES sensor is a capacitive sensor or a resonant sensor.

[0018] According to an embodiment of the present application, the power supply module further includes an inverter disposed between the voltage adjustment module and the sensor module, for converting direct current output by the voltage adjustment module into alternating current.

[0019] With this configuration, the inverter can convert direct current (DC) into alternating current (AC), that is, convert the DC from batteries, solar panels or other DC power sources into standard AC, so that electronic devices that require AC can work normally. The inverter can not only realize the conversion of electrical energy forms, but also control the output voltage and frequency to ensure the quality and stability of the output power to meet the needs of different loads. In addition, the inverter also has a protection function to prevent faults such as overload, short circuit and voltage fluctuation, ensuring the safe and reliable operation of the system.

[0020] According to one embodiment of the present application, the MEMS / NMES sensor is a capacitive sensor, and the supporting structure of the sensor module is a cantilever beam structure, a double-ended fixed beam structure, a diaphragm structure, a spring structure, or a dielectric material; when the supporting structure of the sensor module is a diaphragm structure or a dielectric material, the sensor module includes a central capacitor, a peripheral capacitor, and two fixed capacitors, and the central capacitor, the peripheral capacitor and the two fixed capacitors form a capacitive Wheatstone bridge; as the driving voltage of the sensor module increases, both the central capacitor and the peripheral capacitor increase.

[0021] According to one embodiment of the present application, the MEMS / NMES sensor is a resonant sensor, and the sensor module includes: a resonator, which generates resonance under the action of an excitation source, and the resonance includes a main vibration and a secondary vibration, and the resonance parameters include a main vibration frequency, a main vibration amplitude, a secondary vibration frequency, and a secondary vibration amplitude;

[0022] A driver connected to the resonator, the driver is used to generate an excitation source to drive the resonator to resonate;

[0023] a detector connected to the resonator, the detector being used to detect a resonance parameter of the resonator;

[0024] A temperature control module, used to control the operating temperature of the resonator;

[0025] The temperature compensation module is used to correct the frequency drift of the resonator at different operating temperatures.

[0026] With such a configuration, a driving voltage or a driving test voltage can be applied to the driver to generate an excitation source, thereby driving the resonator to resonate, and the resonant parameters of the resonator can be detected by means of the detector, thereby obtaining the main vibration frequency, main vibration amplitude, secondary vibration frequency, and secondary vibration amplitude of the sensor module under different driving voltages or driving test voltages, and then obtaining the excitation-response pair required by the PUF technology. In addition, when the temperature rises, the frequencies of the main vibration and secondary vibration of the resonance will decrease with the increase of temperature due to the influence of thermal expansion and the change of elastic modulus, and the amplitudes of the main vibration and secondary vibration of the resonance will decrease with the increase of temperature due to the damping effect and thermal expansion. The temperature of the sensor module can be controlled by means of the temperature control module, and the frequency drift of the resonator at different working temperatures can be corrected by means of the temperature compensation module, thereby avoiding the occurrence of inaccurate resonance parameters of the sensor module when it resonates under the test state due to the influence of ambient temperature.

[0027] According to one embodiment of the present application, when the driving voltage of the sensor module increases, the main oscillation frequency and the secondary oscillation frequency of the resonator remain unchanged, and the main oscillation amplitude and the secondary oscillation amplitude of the resonator increase; when the driving voltage of the sensor module decreases, the main oscillation frequency and the secondary oscillation frequency of the resonator remain unchanged, and the main oscillation amplitude and the secondary oscillation amplitude of the resonator decrease.

[0028] In this way, the temperature of the sensor module is controlled by the temperature control module, and the frequency drift of the resonator at different operating temperatures is corrected with the help of the temperature compensation module, so as to obtain different main vibration amplitudes and secondary vibration amplitudes of the resonator under the action of the driving voltage or the driving test voltage, and then obtain the excitation-response pair required by the PUF technology.

[0029] Beneficial effect: The sensor disclosed in the embodiment of the present application supplies power to the processor, storage module, interface module, and sensor module through the power module, and switches between a test state and a working state with the help of the processor. In the working state, the processor controls the battery to directly power the sensor module so that the MEMS / NMES sensor works normally. In the test state, the processor controls the battery to be electrically connected to the sensor module via the voltage adjustment module, and the processor also controls the voltage value of the driving voltage output by the power module to the sensor module in response to a test signal of an external testing device, and according to the sensor module based on different driving voltages applied to the sensor module, the processor calculates the response parameters of the sensor module, thereby obtaining the excitation-response pair required for the PUF technology. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the conventional technology, the drawings required for use in the embodiments or the conventional technology descriptions are briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0031] Figure 1 A module block diagram of a MEMS / NMES sensor provided for one embodiment of the present application;

[0032] Figure 2 A circuit diagram of a voltage adjustment module in a MEMS / NMES sensor according to the above embodiment of the present application is shown;

[0033] Figure 3 A circuit diagram of a capacitive Wheatstone bridge of a MEMS / NMES sensor provided in another embodiment of the present application;

[0034] Figure 4 A top view of a resonator of a MEMS / NMES sensor provided according to another embodiment of the present application.

[0035] Figure numerals: 1, sensor; 10, power module; 11, voltage adjustment module; 20, processor; 30, storage module; 40, interface module; 50, sensor module; 51, central capacitor; 52, peripheral capacitor; 53, fixed capacitor; S1, first switch module; S2, second switch module; S3, third switch module; U1, driving voltage; U2, output voltage. DETAILED DESCRIPTION

[0036] In order to make the above-mentioned purposes, features and advantages of the present application more obvious and easy to understand, the specific implementation methods of the present application are described in detail below in conjunction with the accompanying drawings. In the following description, many specific details are set forth to facilitate a full understanding of the present application. However, the present application can be implemented in many other ways different from those described herein, and those skilled in the art can make similar improvements without violating the connotation of the present application, so the present application is not limited by the specific embodiments disclosed below.

[0037] As described in the background technology, the prior art lacks PUF applications for small devices such as MEMS sensors. The inventors have studied that the reason is that small devices such as MEMS sensors lack PUF characteristic values ​​that can be used to generate PUF keys in PUF key applications, that is, corresponding excitation-response pairs (CRPs). Based on this, the inventors found that for MEMS sensors, when the driving voltage U1 changes, the relevant parameters of the MEMS sensor (capacitance value / main oscillation amplitude and secondary oscillation amplitude) will also change accordingly, and for the same MEMS sensor, this change characteristic is unique. Therefore, the driving voltage U1 can be used as excitation, and the capacitance value / main oscillation amplitude and secondary oscillation amplitude can be used as response, that is, the capacitance value under different driving voltages U1 can be used as the PUF characteristic value of the MEMS sensor.

[0038] For details, please refer to the attached Figure 1 One embodiment of the present application provides a MEMS / NMES sensor 1, comprising: a power module 10, a processor 20, a storage module 30, an interface module 40, and a sensor module 50; the power module 10 is used to provide power to the processor 20, the storage module 30, the interface module 40, and the sensor module 50, and the power module 10 includes a battery and a voltage adjustment module 11; the processor 20 is electrically connected to the sensor module 50, and is used to calculate the capacitance value of the sensor module 50, and is used to control the working state of the power module 10, and the processor 20 is also used to control the change of the driving voltage value output by the power module 10 to the sensor module 50 in response to the test signal of the external test equipment;

[0039] In particular, the voltage output by the battery is the output voltage U2.

[0040] Wherein, when the MEMS / NMES sensor 1 is in a testing state, the battery is electrically connected to the sensor module 50 via the voltage adjustment module 11 , and when the MEMS / NMES sensor 1 is in a working state, the battery directly supplies power to the sensor module 50 .

[0041] It should be noted that the processor 20, the storage module 30, the interface module 40, and the sensor module 50 can be powered by the power module 10, and the processor 20 can be used to switch between the test state and the working state. In the working state, the processor 20 controls the battery to directly power the sensor module 50 so that the MEMS / NMES sensor 1 works normally. In the test state, the processor 20 controls the battery to be electrically connected to the sensor module 50 via the voltage adjustment module 11, and the processor 20 also controls the voltage value of the driving voltage U1 output by the power module 10 to the sensor module 50 in response to the test signal of the external testing equipment, and according to the sensor module 50 based on the different driving voltages U1 applied to the sensor module 50, the processor 20 calculates the response parameters of the sensor module 50, thereby obtaining the excitation-response pair required for the PUF technology.

[0042] In other embodiments of the present application, the power supply module 10 also includes a first switch module S1, and the voltage adjustment module 11 is electrically connected to the battery through the first switch module S1. The first switch module S1 responds to the first test signal sent by the processor 20 to control the voltage adjustment module 11 to output a corresponding driving voltage.

[0043] It should be noted that, after receiving the voltage signal sent by the processor 20 , the voltage adjustment module 11 adjusts the driving voltage value applied to the sensor module 50 , so as to lay a foundation for subsequently obtaining the response parameters of the sensor module 50 .

[0044] In other embodiments of the present application, Figure 2 As shown, the voltage adjustment module 11 includes k first voltage output nodes, and a first resistor R1, a first resistor R2 to a first resistor Rk connected in series in sequence, k is a positive integer, and a first voltage output node is arranged between two adjacent first resistors. The first switch module responds to the second test signal sent by the processor, and selects to connect the corresponding voltage output node to control the voltage adjustment module 11 to output the corresponding driving voltage.

[0045] It should be noted that, when it is necessary to apply different voltages to the sensor module 50, the voltage division principle can be used to connect different numbers of resistors according to different needs, so that the voltages on different numbers of resistors can be applied to the sensor module 50, thereby meeting the need to apply different voltages to the sensor module 50. Compared with the solution using a sliding rheostat, this solution can automatically adjust the voltage output of the pressure simulation structure applied to the sensor module 50 by means of hardware or software, which can reduce labor costs and improve test efficiency.

[0046] In other embodiments of the present application, the voltage adjustment module 11 is a sliding rheostat, which can change the resistance value based on the voltage division principle by the position of the sliding contact of the sliding rheostat on the resistance wire to meet the need of connecting different resistance values ​​in the circuit, thereby applying voltages at different resistance values ​​to the sensor module 50, thereby meeting the need to apply different voltages to the sensor module 50, and further obtaining the excitation-response pair required for the PUF technology.

[0047] In other embodiments of the present application, the power module 10 further includes an inverter disposed between the voltage adjustment module 11 and the sensor module 50 , for converting the direct current output by the voltage adjustment module 11 into alternating current.

[0048] It should be noted that the inverter can convert direct current (DC) into alternating current (AC), that is, convert the direct current from the battery, solar panel or other DC power source into standard alternating current, so that the electronic devices that require alternating current can work normally, that is, the MEMS / NMES sensor 1 provided in this application. The inverter can not only realize the conversion of the form of electric energy, but also control the output voltage and frequency to ensure the quality and stability of the output electric energy to meet the needs of different loads. In addition, the inverter also has a protection function to prevent faults such as overload, short circuit and voltage fluctuation, ensuring the safe and reliable operation of the system.

[0049] In other embodiments of the present application, the power supply module 10 also includes a second switch module S2 and a third switch module S3, wherein the first end of the second switch module S2 is connected to the positive electrode V+ of the output voltage of the sensor module 50, and the second end is grounded; the first end of the third switch module S3 is connected to the negative electrode V- of the output voltage of the sensor module 50, and the second end is grounded; the second switch module S2 is closed in response to the output voltage test signal of V-, and is opened in response to the output voltage test signal of V+; the third switch is closed in response to the output voltage test signal of V+, and is opened in response to the output voltage test signal of V-.

[0050] It should be noted that the second switch module S2 can be closed or closed in response to the output voltage test signal of V- or V+, and the third switch module S3 can be closed or closed in response to the output voltage test signal of V- or V+, so as to accurately measure the voltage applied to the sensor module 50 at a certain moment. Compared with directly measuring the voltage output to the sensor module 50, this solution can effectively eliminate the system errors caused by factors such as power supply voltage fluctuations and resistance temperature coefficient, improve the measurement accuracy, and can effectively reduce the influence of external electromagnetic interference on the measurement results, so as to improve the accuracy of the measurement of the voltage applied to the sensor module 50 at a certain moment.

[0051] In particular, the MEMS / NMES sensor is a capacitive sensor or a resonant sensor.

[0052] In other embodiments of the present application, when the MEMS / NMES sensor is a capacitive sensor, the sensor module 50 is a parallel plate capacitor structure, a variable area capacitor structure, a comb-shaped capacitor structure, or a differential capacitor structure. Parallel plate capacitors can be used in static environments that require high-precision output and are also under high voltage conditions; variable area capacitors are suitable for tuning circuits or environments that require dynamic displacement measurement; comb-shaped capacitors are suitable for environments that require high sensitivity and have nano-level measurement and integrated application requirements; differential capacitors are suitable for environments that have high-precision measurement, noise suppression requirements, and a wide dynamic range. Sensor modules 50 that are more suitable for different environments can be selected according to the requirements of different environments.

[0053] In other embodiments of the present application, the supporting structure of the sensor module is a cantilever beam structure, a double-end fixed beam structure, a diaphragm structure, a spring structure, or a dielectric material; when the supporting structure of the sensor module is a diaphragm structure or a dielectric material, the sensor module includes a central capacitor, a peripheral capacitor, and two fixed capacitors, and the central capacitor, the peripheral capacitor and the two fixed capacitors form a capacitive Wheatstone bridge; as the driving voltage of the sensor module increases, both the central capacitor and the peripheral capacitor increase.

[0054] It should be noted that one end of the cantilever beam structure is fixed and the other end is free. It is usually used for movable electrodes in micro-electromechanical systems (MEMS) and is suitable for occasions requiring sensitive displacement measurement, such as acceleration sensors and pressure sensors. Its advantages are simple structure and easy manufacturing; the double-ended fixed beam structure is characterized by fixed ends of the beam and the middle part can be deformed. It is often used in micro-resonators and micro-switches. Its advantages are good stability and high frequency response, and it can be suitable for high-frequency applications; the diaphragm structure is characterized by being made of thin elastic materials and can deform in-plane or out-of-plane. It is widely used in pressure sensors and microphones. Its advantages are high sensitivity, fast response speed, and ability to withstand large pressure changes; the spring structure is characterized by being able to provide support for the movable part through the spring, such as structures such as coil springs or leaf springs, which are used in environments requiring synchronization of mechanical movement and capacitance changes, such as position sensors or force sensors. Its advantage is that it can provide stable mechanical support while allowing relative movement between electrodes; the advantage of dielectric materials is that different dielectric materials have different dielectric constants and temperature stability, and suitable materials can be selected according to needs.

[0055] In other embodiments of the present application, Figure 3 As shown, when the supporting structure of the sensor module 50 is a diaphragm structure or a dielectric material, the sensor module 50 includes a central capacitor 51, a peripheral capacitor 52, and two fixed capacitors 53, and the central capacitor 51, the peripheral capacitor 52 and the two fixed capacitors 53 form a capacitive Wheatstone bridge. The central capacitor 51, the peripheral capacitor 52 and the two fixed capacitors 53 can form a capacitive Wheatstone bridge, and with the high precision of the measurement of the Wheatstone bridge, especially in a balanced state, the influence of parasitic effects in the circuit on the measurement result can be eliminated, thereby improving the precision of the capacitance value of the sensor module 50 obtained and reducing unnecessary errors.

[0056] In particular, the output voltage of the capacitive Wheatstone bridge is the bridge output voltage Vout.

[0057] In other embodiments of the present application, the MEMS / NMES sensor is a resonant sensor, and the sensor module includes: a resonator, which generates resonance under the action of an excitation source, and the resonance includes a main vibration and a secondary vibration, and the resonance parameters include a main vibration frequency, a main vibration amplitude, a secondary vibration frequency, and a secondary vibration amplitude;

[0058] A driver connected to the resonator, the driver is used to generate an excitation source to drive the resonator to resonate;

[0059] a detector connected to the resonator, the detector being used to detect a resonance parameter of the resonator;

[0060] A temperature control module, used to control the operating temperature of the resonator;

[0061] The temperature compensation module is used to correct the frequency drift of the resonator at different operating temperatures.

[0062] It should be noted that a driving voltage U1 can be applied to the driver so that the driver generates an excitation source, thereby driving the resonator to resonate, and the resonant parameters of the resonator can be detected with the help of the detector, so as to obtain the main vibration frequency, main vibration amplitude, secondary vibration frequency, and secondary vibration amplitude of the sensor module under different driving voltages U1, and then obtain the excitation-response pair required by the PUF technology; and, when the temperature rises, affected by thermal expansion and changes in elastic modulus, the frequencies of the main vibration and secondary vibration of the resonance will decrease with the increase in temperature, and affected by the damping effect and thermal expansion, the amplitudes of the main vibration and secondary vibration of the resonance will decrease with the increase in temperature. The temperature of the sensor module can be controlled with the help of the temperature control module, and the frequency drift of the resonator at different operating temperatures can be corrected with the help of the temperature compensation module, so as to avoid the occurrence of inaccurate resonance parameters of the sensor module when it resonates under the test state due to the influence of ambient temperature.

[0063] In particular, the resonator is a cantilever beam resonator, a double-ended fixed beam resonator, a ring resonator, a diaphragm resonator, a columnar resonator, a comb-tooth resonator, a piezoelectric resonator, or a nanowire resonator.

[0064] It should be noted that the cantilever beam resonator has a cantilever beam structure, one end of which is fixed and the other end is free. When an external force acts on the free end, the beam will bend and vibrate. It is usually used as a movable electrode in a micro-electromechanical system (MEMS) and is suitable for occasions that require sensitive displacement measurement, such as acceleration sensors and pressure sensors. Its advantage is that it has a simple structure and is easy to manufacture.

[0065] Double-ended fixed beam resonator: It has a double-ended fixed beam structure, where both ends of the beam are fixed and the middle part can be deformed. It is often used in micro-resonators and micro-switches. Its advantages are good stability, high frequency response, and can be suitable for high-frequency applications.

[0066] Ring resonator: It has a ring structure and can vibrate radially or tangentially under the action of external force. Its resonant frequency is determined by the size and material properties of the ring. It is suitable for high-precision sensors.

[0067] Diaphragm resonator: It has a diaphragm structure and is made of a thin elastic material. It can deform in-plane or out-of-plane. It is widely used in pressure sensors and microphones. Its advantages are high sensitivity, fast response speed, and ability to withstand large pressure changes.

[0068] Columnar resonator: It has a cylindrical or square column structure and can vibrate axially or radially under the action of external force. Its resonant frequency is determined by the size and material properties of the column. It is often used in mass sensors and acceleration sensors.

[0069] Comb-tooth resonator: It is composed of multiple interlaced comb-tooth structures, each of which moves relative to each other under the action of external force. It is often used in inertial sensors in micromechanical systems (MEMS);

[0070] Piezoelectric resonator: A resonator based on piezoelectric materials, such as quartz crystal, that can vibrate mechanically under the action of an applied electric field. Piezoelectric resonators have high stability and high Q values ​​and are often used in frequency control and sensors.

[0071] Nanowire resonator: It has a slender linear structure with a diameter at the nanometer level, which can bend or stretch and vibrate under the action of external force. The nanowire resonator has extremely high sensitivity and resolution and is suitable for nanoscale sensing applications. According to the different requirements of different MEMS / NMES sensors 1 for resonators, a resonator that is more suitable for the MEMS / NMES sensor 1 can be selected to meet the needs of the MEMS / NMES sensor 1 being applied in different environments.

[0072] It should be noted that if Figure 4 As shown, the resonator provided in this embodiment is a cantilever beam resonator, f0 refers to the main vibration beam / main vibration electrode, and f1 refers to the secondary vibration beam / secondary vibration electrode.

[0073] It should be noted that during the test, the range of the driving voltage U1 needs to be controlled within a preset range to prevent the resonator from operating in a nonlinear vibration state during the test.

[0074] In other embodiments of the present application, the driving voltage U1 of the sensor module increases, the main oscillation frequency and the secondary oscillation frequency of the resonator remain unchanged, and the main oscillation amplitude and the secondary oscillation amplitude of the resonator increase; the driving voltage U1 of the sensor module decreases, the main oscillation frequency and the secondary oscillation frequency of the resonator remain unchanged, and the main oscillation amplitude and the secondary oscillation amplitude of the resonator decrease.

[0075] It should be noted that the temperature of the sensor module is controlled by the above-mentioned temperature control module, and the frequency drift of the resonator at different operating temperatures is corrected with the help of the temperature compensation module, so as to obtain different main vibration amplitudes and secondary vibration amplitudes of the resonator under the action of the driving voltage U1, and then obtain the excitation-response pair required by the PUF technology.

[0076] In other embodiments of the present application, the driving voltage U1 of the sensor module increases, the main oscillation frequency and the secondary oscillation frequency of the resonator remain unchanged, and the main oscillation amplitude and the secondary oscillation amplitude of the resonator increase; the driving voltage U1 of the sensor module decreases, the main oscillation frequency and the secondary oscillation frequency of the resonator remain unchanged, and the main oscillation amplitude and the secondary oscillation amplitude of the resonator decrease.

[0077] It should be noted that the temperature of the sensor module is controlled by the above-mentioned temperature control module, and the frequency drift of the resonator at different operating temperatures is corrected with the help of the temperature compensation module, so as to obtain different main vibration amplitudes and secondary vibration amplitudes of the resonator under the action of the driving voltage U1, and then obtain the excitation-response pair required by the PUF technology.

[0078] In other embodiments of the present application, the MEMS / NMES sensor 1 is a pressure sensor, an acceleration sensor, a displacement sensor, a humidity sensor, a liquid level sensor, a gyroscope, a gas sensor, a temperature sensor, or a biosensor.

[0079] In particular, when the MEMS / NMES sensor 1 is a wireless sensor, the MEMS / NMES sensor 1 further includes an antenna module and a communication module, and the antenna module and the communication module are used to establish wireless communication with an external test terminal or test equipment.

[0080] It should be noted that the MEMS / NMES sensor 1 can be integrated into various micro- and nano-scale devices by virtue of the small size and light weight of the MEMS sensor and the NMES sensor. Moreover, the power consumption of the MEMS sensor and the NMES sensor is extremely low, and they have a long practical life. In addition, the MEMS sensor and the NMES sensor also have the characteristics of high sensitivity and short response time, and can detect small changes in real time, and can be applied to environments that require precise measurement and have high-speed dynamic processes, and have higher environmental adaptability.

[0081] In particular, other embodiments of the present application also provide a method for generating a PUF characteristic value of a MEMS / NMES sensor 1, comprising the following steps:

[0082] Provide a MEMS / NMES sensor 1, and turn on the power of the MEMS / NMES sensor 1, wherein the MEMS / NMES sensor 1 includes a power supply, a driving voltage adjustment circuit, and a MEMS / NMES sensor 1 module; the driving voltage adjustment circuit is used to adjust the driving voltage U1 input to the MEMS / NMES sensor 1 module;

[0083] Inputting multiple sets of driving voltages U1 to the MEMS / NMES sensor 1 module via the driving voltage adjustment circuit;

[0084] The capacitance value / main vibration amplitude and secondary vibration amplitude of the MEMS / NMES sensor 1 module under each set of driving voltage U1 are measured to obtain multiple sets of capacitance values / main vibration amplitude and secondary vibration amplitude;

[0085] The plurality of groups of driving voltages U1 are used as excitations, and the capacitance values / primary oscillation amplitudes and secondary oscillation amplitudes under each group of driving voltages U1 are used as responses to generate PUF characteristic values.

[0086] Those skilled in the art can understand that all or part of the processes in the above-mentioned embodiment methods can be completed by instructing the relevant hardware through a computer program, and the computer program can be stored in a non-volatile computer-readable storage medium. When the computer program is executed, it can include the processes of the embodiments of the above-mentioned methods. Among them, any reference to the memory, database or other medium used in the embodiments provided in the present application can include at least one of non-volatile and volatile memory. Non-volatile memory can include read-only memory (ROM), magnetic tape, floppy disk, flash memory, optical memory, high-density embedded non-volatile memory, resistive random access memory (ReRAM), magnetoresistive random access memory (MRAM), ferroelectric random access memory (FRAM), phase change memory (PCM), graphene memory, etc. Volatile memory can include random access memory (RAM) or external cache memory, etc. As an illustration and not limitation, RAM can be in various forms, such as static random access memory (SRAM) or dynamic random access memory (DRAM). The database involved in each embodiment provided in this application may include at least one of a relational database and a non-relational database. Non-relational databases may include distributed databases based on blockchains, etc., but are not limited to this. The processing modules involved in each embodiment provided in this application may be general processing modules, central processing modules, graphics processing modules, digital signal processing modules, programmable logic devices, data processing logic devices based on quantum computing, etc., but are not limited to this.

[0087] Unless otherwise defined, all technical and scientific terms used in the specification of this application have the same meaning as those commonly understood by those skilled in the art to which this application belongs. The terms used in the specification of this application are only for the purpose of describing specific embodiments and are not intended to limit this application. The term "and / or" used in the specification of this application includes any and all combinations of one or more related listed items.

[0088] The technical features of the above embodiments may be arbitrarily combined. To make the description concise, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0089] The above-described embodiments only express several implementation methods of the present application, and the descriptions thereof are relatively specific and detailed, but they cannot be understood as limiting the scope of the present application. It should be pointed out that, for a person of ordinary skill in the art, several variations and improvements can be made without departing from the concept of the present application, and these all belong to the protection scope of the present application. Therefore, the protection scope of the present application shall be subject to the attached claims.

Claims

1. A MEMS / NMES sensor, characterized in that: include: A power module, a processor, a storage module, an interface module, and a sensor module; the power module is used to provide power to the processor, the storage module, the interface module, and the sensor module, and the power module includes a battery and a voltage adjustment module; the processor is used to control the working state of the power module, and the processor is also used to control the change of the driving voltage value output by the power module to the sensor module in response to a test signal of an external test device; Wherein, when the MEMS / NMES sensor is in a testing state, the battery is electrically connected to the sensor module via the voltage adjustment module, and when the MEMS / NMES sensor is in a working state, the battery directly supplies power to the sensor module.

2. The MEMS / NMES sensor according to claim 1, characterized in that: The power supply module further includes a first switch module, through which the voltage adjustment module is electrically connected to the battery, and the first switch module controls the voltage adjustment module to output a corresponding driving voltage in response to a first test signal sent by the processor.

3. The MEMS / NMES sensor according to claim 2, characterized in that: The voltage adjustment module includes k voltage output nodes, and resistors R1, R2 to Rk connected in series in sequence, k is a positive integer, and a voltage output node is arranged between two adjacent resistors. The first switch module responds to the second test signal sent by the processor and selects to connect the corresponding voltage output node to control the voltage adjustment module to output the corresponding driving voltage.

4. The MEMS / NMES sensor according to claim 1, characterized in that: The voltage adjustment module is a sliding resistor.

5. The MEMS / NMES sensor according to claim 1, characterized in that: The power supply module also includes a second switch module and a third switch module, wherein the first end of the second switch module is connected to the positive electrode V+ of the output voltage of the sensor module, and the second end is grounded; the first end of the third switch module is connected to the negative electrode V- of the output voltage of the sensor module, and the second end is grounded; the second switch module is closed in response to the output voltage test signal of V-, and is opened in response to the output voltage test signal of V+; the third switch is closed in response to the output voltage test signal of V+, and is opened in response to the output voltage test signal of V-.

6. The MEMS / NMES sensor according to any one of claims 1 to 5, characterized in that: The MEMS / NMES sensor is a capacitive sensor or a resonant sensor.

7. The MEMS / NMES sensor according to claim 6, characterized in that: The power supply module further includes an inverter disposed between the voltage adjustment module and the sensor module, and configured to convert the direct current output by the voltage adjustment module into alternating current.

8. The MEMS / NMES sensor according to claim 7, characterized in that: The MEMS / NMES sensor is a capacitive sensor, and the supporting structure of the sensor module is a cantilever beam structure, a double-ended fixed beam structure, a diaphragm structure, a spring structure, or a dielectric material; when the supporting structure of the sensor module is a diaphragm structure or a dielectric material, the sensor module includes a central capacitor, a peripheral capacitor, and two fixed capacitors, and the central capacitor, the peripheral capacitor and the two fixed capacitors form a capacitive Wheatstone bridge; when the driving voltage of the sensor module increases, the central capacitor and the peripheral capacitor both increase.

9. The MEMS / NMES sensor according to claim 7, characterized in that: The MEMS / NMES sensor is a resonant sensor, and the sensor module includes: a resonator, which generates resonance under the action of an excitation source, and the resonance includes a main vibration and a secondary vibration, and the resonance parameters include a main vibration frequency, a main vibration amplitude, a secondary vibration frequency, and a secondary vibration amplitude; A driver connected to the resonator, the driver is used to generate an excitation source to drive the resonator to resonate; a detector connected to the resonator, the detector being used to detect a resonance parameter of the resonator; A temperature control module, used to control the operating temperature of the resonator; The temperature compensation module is used to correct the frequency drift of the resonator at different operating temperatures.

10. The MEMS / NMES sensor according to claim 9, characterized in that: When the driving voltage of the sensor module increases, the main oscillation frequency and the secondary oscillation frequency of the resonator remain unchanged, and the main oscillation amplitude and the secondary oscillation amplitude of the resonator increase; when the driving voltage of the sensor module decreases, the main oscillation frequency and the secondary oscillation frequency of the resonator remain unchanged, and the main oscillation amplitude and the secondary oscillation amplitude of the resonator decrease.

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