Write voltage control method and memory

Abstract

The invention discloses a write voltage control method and a memory, and is applied to the field of memories. The method provided by the invention comprises the following steps: acquiring reference data corresponding to the resistance value of a reference resistor; mTJ data corresponding to the resistance value of the MTJ resistor are acquired; determining the relation between the resistance value of the reference resistor and the resistance value of the MTJ resistor according to the relation between the reference data and the MTJ data; adjusting the resistance value of the reference resistor according to the relation between the resistance value of the reference resistor and the resistance value of the MTJ resistor so as to adjust the writing voltage according to the strength of adjusting the resistance value of the reference resistor. The relation between the default writing voltage and the voltage when the actual data is written is indirectly reflected by comparing the resistance value of the reference resistor with the resistance value of the MTJ resistor, and the resistance value of the reference resistor is adjusted according to the relation between the resistance value of the reference resistor and the resistance value of the MTJ resistor to adjust the writing voltage. The problem that the data is not written due to the fact that the voltage is smaller than the writing voltage during data writing and the problem that the durability of the memory is reduced due to the fact that the voltage is larger than the writing voltage during data writing are avoided.

Description

Technical Field

[0001] The present application relates to the field of memory, and in particular to a write voltage control method and a memory. Background Art

[0002] In recent years, magnetic random access memory (STT-MRAM) is a new type of memory with potential. In addition to the advantages of simple circuit design, fast read and write speed, unlimited erasing and writing, the biggest advantage of this memory over traditional memory (Dynamic Random Access Memory, DRAM) is non-volatility, that is, data is not lost when power is off. Magnetic tunnel junctions (MTJ) are important bits of MRAM, which are composed of a free layer, a reference layer, and a dielectric layer between the two layers. By changing the magnetization direction of the free layer, the magnetization directions of the two magnetic layers are made the same (low resistance state) or opposite (high resistance state), realizing data storage. However, due to the influence of process fluctuations, the resistance of MTJ has a certain fluctuation. Therefore, in practical applications, the voltage distributed to MTJ in the circuit will also have some fluctuations. If the write voltage in the same data writing condition is still used at this time, when the resistance of MTJ is low, the voltage distributed to MTJ is small, and the small voltage is lower than the write voltage. At this time, the data may not be stored in the memory. When the resistance of the MTJ is high, the voltage distributed to the MTJ is large, and the large voltage is greater than the write voltage. At this time, when the memory writes data, it is easy to cause breakdown of the memory and greatly reduce the durability of the memory.

[0003] In view of the above technology, seeking a write voltage control method is an urgent problem to be solved by those skilled in the art. Summary of the invention

[0004] The purpose of the present application is to provide a write voltage control method and a memory, which can solve the problem in the prior art that the durability of the memory is reduced due to the unstable MTJ resistance and the fixed write voltage, or the problem that data is not written into the memory.

[0005] In order to solve the above technical problems, the present application provides a write voltage control method, comprising:

[0006] Obtain reference data corresponding to the reference resistance value;

[0007] Obtain MTJ data corresponding to the MTJ resistance value;

[0008] According to the relationship between the reference data and the MTJ data, determining the relationship between the reference resistor value and the MTJ resistor value;

[0009] According to the relationship between the resistance value of the reference resistor and the resistance value of the MTJ resistor, the resistance value of the reference resistor is adjusted, so that the write voltage is adjusted according to the intensity of adjusting the resistance value of the reference resistor.

[0010] Preferably, obtaining reference data corresponding to the reference resistor value includes:

[0011] Obtain a reference voltage or reference current corresponding to a reference resistor value;

[0012] The MTJ data corresponding to the MTJ resistance value are obtained as follows:

[0013] Obtain the MTJ voltage or MTJ current corresponding to the MTJ resistance value.

[0014] Preferably, when the reference data is a reference voltage and the MTJ data is an MTJ voltage, determining the relationship between the resistance value of the reference resistor and the resistance value of the MTJ resistor according to the relationship between the reference data and the MTJ data includes:

[0015] When the reference voltage is greater than the MTJ voltage, it is determined that the reference resistance value is greater than the MTJ resistance value;

[0016] When the reference voltage is less than the MTJ voltage, it is determined that the reference resistor value is less than the MTJ resistor value.

[0017] Preferably, adjusting the reference resistor value according to the relationship between the reference resistor value and the MTJ resistor value, so as to adjust the write voltage according to the intensity of adjusting the reference resistor value, comprises:

[0018] When the resistance of the reference resistor is greater than the resistance of the MTJ resistor, the corresponding resistor switch is controlled to reduce the resistance of the reference resistor and increase the write voltage;

[0019] When the resistance of the reference resistor is less than the resistance of the MTJ resistor, the corresponding resistor switch is controlled to increase the resistance of the reference resistor and reduce the write voltage.

[0020] Preferably, when the reference data is a reference current and the MTJ data is an MTJ current, determining the relationship between the reference resistor value and the MTJ resistor value according to the relationship between the reference data and the MTJ data includes:

[0021] When the reference current is greater than the MTJ current, it is determined that the reference resistance value is less than the MTJ resistance value;

[0022] When the reference current is less than the MTJ current, it is determined that the reference resistor value is greater than the MTJ resistor value.

[0023] To solve the above technical problems, the present application also provides a memory applied to the above write voltage control method, comprising: an MTJ main array area and a write voltage control area; wherein the write voltage control area comprises: a reference resistor, an MTJ resistor and a write voltage adjustment circuit;

[0024] Wherein, the reference resistor is connected to the write voltage regulating circuit;

[0025] The MTJ resistor is connected to the write voltage adjustment circuit;

[0026] The write voltage adjustment circuit is used to compare the reference resistance value and the MTJ resistance value, and adjust the write voltage according to the relationship between the reference resistance value and the MTJ resistance value.

[0027] Preferably, the write voltage regulating circuit comprises: a resistance comparison circuit, a digital logic circuit and a write voltage adjustment circuit;

[0028] The input end of the resistance comparison circuit is connected to the reference resistor and the MTJ resistor respectively, and the output end of the resistance comparison circuit is connected to the input end of the digital logic circuit; it is used to compare the resistance value of the reference resistor and the resistance value of the MTJ resistor;

[0029] The output end of the digital logic circuit is connected to the input end of the write voltage adjustment circuit, and is used to transmit the comparison result to the write voltage adjustment circuit, so that the write voltage adjustment circuit adjusts the write voltage according to the comparison result.

[0030] Preferably, the reference resistor comprises: a decoder, a basic resistor and N resistor units, wherein N≥1;

[0031] Wherein, the basic resistor and N resistor units are connected in sequence;

[0032] The decoder is connected to the control end of each resistance unit respectively, and is used to control whether each resistance unit is connected to the circuit.

[0033] Preferably, the resistance unit includes a unit resistor and a switch;

[0034] The input end of the unit resistor is connected to the output end of the base resistor or the previous unit resistor, and the output end of the unit resistor is connected to the input end of the switch and the input end of the next unit resistor;

[0035] The output of a switch is connected to the output of the next switch;

[0036] The control end of the switch is connected to the decoder.

[0037] Preferably, the MTJ resistor comprises M parallel MTJ array units; M≥2;

[0038] The input ends of the MTJ array units are all connected, and the output ends of the MTJ array units are all connected. Each MTJ array unit is composed of n MTJs connected in series, where n≥2.

[0039] A write voltage control method provided by the present application includes: obtaining reference data corresponding to the reference resistor value; obtaining MTJ data corresponding to the MTJ resistor value; determining the relationship between the reference resistor value and the MTJ resistor value according to the relationship between the reference data and the MTJ data; adjusting the reference resistor value according to the relationship between the reference resistor value and the MTJ resistor value, so as to adjust the write voltage according to the intensity of adjusting the reference resistor value. The size of the reference resistor value in the present application is used to indirectly reflect the size of the write voltage, and the size of the MTJ resistor value is used to indirectly reflect the size of the voltage when the data is written, wherein the reference resistor value is adjustable, and the MTJ resistor is not adjustable. Therefore, the present application indirectly reflects the relationship between the write voltage and the voltage when the data is written by comparing the reference resistor value and the MTJ resistor value, and adjusts the reference resistor value according to the relationship between the reference resistor value and the MTJ resistor value, and indirectly adjusts the write voltage. To ensure that the write voltage and the voltage when the data is written are as equal as possible, the problem of data not being written to the memory due to the voltage being less than the write voltage when the data is written, and the problem of reduced memory durability due to the voltage being greater than the write voltage when the data is written is avoided. BRIEF DESCRIPTION OF THE DRAWINGS

[0040] In order to more clearly illustrate the embodiments of the present application, the following is a brief introduction to the drawings required for use in the embodiments. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0041] Figure 1 is the normal distribution diagram of MTJ resistance under different configurations;

[0042] Figure 2 A flow chart of a write voltage control method provided in an embodiment of the present application;

[0043] Figure 3 The overall process of the write voltage control method provided in the embodiment of the present application;

[0044] Figure 4 A schematic diagram of a resistance comparison circuit provided in an embodiment of the present application;

[0045] Figure 5 A schematic diagram of a digital logic circuit provided in an embodiment of the present application;

[0046] Figure 6 A schematic diagram of a write voltage adjustment circuit provided in an embodiment of the present application;

[0047] Figure 7 A schematic diagram of a reference resistor provided in an embodiment of the present application;

[0048] Figure 8A schematic diagram of an MTJ resistor provided in an embodiment of the present application. DETAILED DESCRIPTION

[0049] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0050] The core of this application is to provide a write voltage control method and a memory.

[0051] In order to enable those skilled in the art to better understand the present application, the present application is further described in detail below in conjunction with the accompanying drawings and specific implementation methods.

[0052] In recent years, magnetic random access memory (STT-MRAM) is a new type of memory with great potential. In addition to the advantages of simple circuit design, fast read and write speed, unlimited erasing and writing, the biggest advantage of this memory over traditional memory such as DRAM is non-volatility, that is, data is not lost when power is off.

[0053] Magnetic tunnel junction (MTJ) is an important bit element of MRAM, which consists of a free layer (magnetization orientation can be changed by current or magnetic field), a reference layer (magnetization orientation is fixed), and a dielectric layer between the two layers. By changing the magnetization direction of the free layer, the magnetization directions of the two magnetic layers are made the same (low resistance state R p ) or vice versa (high impedance R Ap ), to achieve data storage. However, due to the influence of process fluctuations, the resistance of MTJ has a certain fluctuation, and the fluctuation range depends on the control ability of process manufacturing. Usually, due to the influence of process fluctuations, such as Figure 1 As shown, the distribution of MTJ resistance is normal distribution. Figure 1 Distribution Display R Ap and R p The distribution of MTJ resistance in parallel state has a coefficient of variation of 5%-8%. If the MTJ resistance is 4000Ω, considering the 3σ distribution, the fluctuation range of its resistance is ±600Ω~±960Ω. Usually, the writing condition of the chip is to determine the writing voltage under the premise of ensuring a low writing error rate. Affected by the process, when the MTJ resistance fluctuates, the following problems will occur: when R p When the voltage fluctuates to -600Ω~-960Ω, the fixed write voltage condition causes data to be easily not written into the chip. pWhen the voltage fluctuates to the range of 600Ω to 960Ω, the fixed write voltage condition may easily cause breakdown of the memory, thereby reducing the stability and reliability of the memory.

[0054] In order to solve the above technical problems, the present application provides a write voltage control method, such as Figure 2 As shown, the following steps are included:

[0055] S10: Obtain reference data corresponding to the reference resistance value.

[0056] In a specific embodiment, the resistance value of the reference resistor indirectly reflects the magnitude of the write voltage in the memory. The larger the resistance value of the reference resistor, the smaller the corresponding write voltage. Therefore, when the resistance value of the reference resistor is clear, the magnitude of the write voltage can be determined. When the resistance value of the reference resistor is adjustable, the magnitude of the write voltage is also adjustable.

[0057] Generally, the resistance value of a resistor is indirectly determined by obtaining a voltage or a current. Therefore, the present application indirectly determines the corresponding reference resistance value by obtaining reference data corresponding to the reference resistance value. It should be noted that the reference data may be a reference voltage or a reference current, which is not limited in the present application and can be set according to the needs of the user.

[0058] S11: Obtain MTJ data corresponding to the MTJ resistance value.

[0059] In a specific embodiment, the MTJ resistance indirectly reflects the magnitude of the write voltage when data is written into the memory. The larger the MTJ resistance, the smaller the data write voltage. Therefore, when the magnitude of the MTJ resistance is clear, the magnitude of the write voltage can be determined. Among them, the MTJ resistance is not adjustable, and similarly, the data write voltage is not adjustable.

[0060] Similarly, the present application indirectly determines the corresponding MTJ resistance value by acquiring the MTJ data corresponding to the MTJ resistance value. It should be noted that the MTJ data may be the MTJ voltage or the MTJ current, which is not limited in the present application and can be set according to the needs of the user.

[0061] It should be noted that the resistance value of the MTJ resistor is equal to the resistance value of the MTJ in the MTJ array in the memory.

[0062] S12: Determine the relationship between the reference resistor value and the MTJ resistor value according to the relationship between the reference data and the MTJ data.

[0063] S13: According to the relationship between the reference resistor value and the MTJ resistor value, the reference resistor value is adjusted, so that the write voltage is adjusted according to the intensity of adjusting the reference resistor value.

[0064] In a specific embodiment, the size relationship between the reference resistor value and the MTJ resistor value can be determined based on the size relationship between the reference data and the MTJ data, and then the reference resistor value is adjusted based on the size relationship between the reference resistor value and the MTJ resistor value, so as to adjust the size of the write voltage. For example: if the reference data is a reference voltage, and the MTJ data is an MTJ voltage, therefore, when the reference voltage is greater than the MTJ voltage, it is judged that the reference resistor value is greater than the MTJ resistor value, and at this time, the reference resistor value needs to be reduced so as to adjust the size of the reference resistor value to the same size as the MTJ resistor value. Since the reference resistor value indirectly reflects the size of the write voltage, when the reference resistor value is reduced, the write voltage will be increased accordingly.

[0065] It should be noted that the present application can set levels for the intensity of the adjustment, and each adjustment means raising or lowering a level to reflect the intensity of the adjustment. However, the present application is not limited and can be selected according to the needs of the user.

[0066] A write voltage control method provided by the present application includes: obtaining reference data corresponding to the reference resistor value; obtaining MTJ data corresponding to the MTJ resistor value; determining the relationship between the reference resistor value and the MTJ resistor value according to the relationship between the reference data and the MTJ data; adjusting the reference resistor value according to the relationship between the reference resistor value and the MTJ resistor value, so as to adjust the write voltage according to the intensity of adjusting the reference resistor value. The size of the reference resistor value in the present application is used to indirectly reflect the size of the write voltage, and the size of the MTJ resistor value is used to indirectly reflect the size of the voltage when the data is written, wherein the reference resistor value is adjustable, and the MTJ resistor is not adjustable. Therefore, the present application indirectly reflects the relationship between the write voltage and the voltage when the data is written by comparing the reference resistor value and the MTJ resistor value, and adjusts the reference resistor value according to the relationship between the reference resistor value and the MTJ resistor value, and indirectly adjusts the write voltage. To ensure that the write voltage and the voltage when the data is written are as equal as possible, the problem of data not being written to the memory due to the voltage being less than the write voltage when the data is written, and the problem of reduced memory durability due to the voltage being greater than the write voltage when the data is written is avoided.

[0067] Based on the above embodiment, as a preferred embodiment, obtaining reference data corresponding to the resistance value of the reference resistor includes:

[0068] Obtain a reference voltage or reference current corresponding to a reference resistor value;

[0069] The MTJ data corresponding to the MTJ resistance value are obtained as follows:

[0070] Obtain the MTJ voltage or MTJ current corresponding to the MTJ resistance value.

[0071] Correspondingly, when the reference data is a reference voltage and the MTJ data is an MTJ voltage, determining the relationship between the reference resistance value and the MTJ resistance value according to the relationship between the reference data and the MTJ data includes:

[0072] When the reference voltage is greater than the MTJ voltage, it is determined that the reference resistance value is greater than the MTJ resistance value;

[0073] When the reference voltage is less than the MTJ voltage, it is determined that the reference resistor value is less than the MTJ resistor value.

[0074] Alternatively, when the reference data is a reference current and the MTJ data is an MTJ current, determining the relationship between the resistance value of the reference resistor and the resistance value of the MTJ resistor according to the relationship between the reference data and the MTJ data includes:

[0075] When the reference current is greater than the MTJ current, it is determined that the reference resistance value is less than the MTJ resistance value;

[0076] When the reference current is less than the MTJ current, it is determined that the reference resistor value is greater than the MTJ resistor value.

[0077] Therefore, on this basis: according to the relationship between the reference resistor value and the MTJ resistor value, the reference resistor value is adjusted so as to adjust the write voltage according to the intensity of adjusting the reference resistor value, including:

[0078] When the resistance of the reference resistor is greater than the resistance of the MTJ resistor, the corresponding resistor switch is controlled to reduce the resistance of the reference resistor and increase the write voltage;

[0079] When the resistance of the reference resistor is less than the resistance of the MTJ resistor, the corresponding resistor switch is controlled to increase the resistance of the reference resistor and reduce the write voltage.

[0080] In a specific embodiment, the embodiment of the present application, as a preferred embodiment, provides two methods for selecting reference data and MTJ data. The first method: voltage method; that is, the reference data is a reference voltage, and the MTJ data is an MTJ voltage. Accordingly, when the reference voltage is greater than the MTJ voltage, the reference resistance value is determined to be greater than the MTJ resistance value; when the reference voltage is less than the MTJ voltage, the reference resistance value is determined to be less than the MTJ resistance value. The second method: current method; that is, the reference data is a reference current, and the MTJ data is an MTJ current. Accordingly, when the reference current is greater than the MTJ current, the reference resistance value is determined to be less than the MTJ resistance value; when the reference current is less than the MTJ current, the reference resistance value is determined to be greater than the MTJ resistance value.

[0081] Correspondingly, according to the relationship between the reference resistor value and the MTJ resistor value, the reference resistor value is adjusted so that the write voltage is adjusted according to the strength of adjusting the reference resistor value: when the reference resistor value is greater than the MTJ resistor value, the corresponding resistor switch is controlled to reduce the reference resistor value, and the reference resistor value is reduced to the same as the MTJ resistor value, and at the same time the write voltage is increased; when the reference resistor value is less than the MTJ resistor value, the corresponding resistor switch is controlled to increase the reference resistor value, so that the reference resistor value is increased to the same as the MTJ resistor value, and at the same time the write voltage is reduced.

[0082] In summary of the above embodiments, the overall flow chart of the write voltage control method is as follows: Figure 3 As shown, the following process is included:

[0083] S20: Start.

[0084] S21: Get the reference voltage / current of the reference resistor.

[0085] S22: Obtain the MTJ voltage / current of the MTJ resistor.

[0086] S23: Compare the reference voltage / current of the reference resistor and the MTJ voltage / current of the MTJ resistor.

[0087] S24: Determine whether the resistance value of the MTJ resistor is the same as the resistance value of the reference resistor.

[0088] S25: If yes, the process ends.

[0089] S26: If not, determine whether the MTJ resistance is greater than the reference resistance.

[0090] S27: If the resistance value of the MTJ resistor is greater than the resistance value of the reference resistor, increase the resistance value of the reference resistor.

[0091] S28: Reduce the write voltage.

[0092] S29: re-determine whether the resistance value of the MTJ resistor is the same as the resistance value of the reference resistor. If so, proceed to step S25; if not, proceed to step S27.

[0093] S30: If the resistance value of the MTJ resistor is smaller than the resistance value of the reference resistor, then reduce the resistance value of the reference resistor.

[0094] S31: Increase the write voltage.

[0095] S32: re-determine whether the resistance value of the MTJ resistor is the same as the resistance value of the reference resistor. If so, proceed to step S25; if not, proceed to step S30.

[0096] The value of the reference resistor in this application is used to indirectly reflect the value of the write voltage, and the value of the MTJ resistor is used to indirectly reflect the value of the voltage when the data is written, wherein the reference resistor value is adjustable, while the MTJ resistor is not adjustable. Therefore, this application indirectly reflects the relationship between the write voltage and the voltage when the data is written by comparing the reference resistor value and the MTJ resistor value, and adjusts the reference resistor value at all times according to the relationship between the reference resistor value and the MTJ resistor value, and indirectly adjusts the write voltage. To ensure that the write voltage and the voltage when the data is written are as equal as possible, the problem of data not being written to the memory due to the voltage being less than the write voltage when the data is written, and the problem of reduced memory durability due to the voltage being greater than the write voltage when the data is written, are avoided.

[0097] To solve the above technical problems, the present application provides a memory applied to the above write voltage control method, comprising: an MTJ main array area and a write voltage control area; wherein the write voltage control area comprises: a reference resistor, an MTJ resistor and a write voltage adjustment circuit;

[0098] Wherein, the reference resistor is connected to the write voltage regulating circuit;

[0099] The MTJ resistor is connected to the write voltage adjustment circuit;

[0100] The write voltage adjustment circuit is used to compare the reference resistance value and the MTJ resistance value, and adjust the write voltage according to the relationship between the reference resistance value and the MTJ resistance value.

[0101] In a specific embodiment, the memory includes an MTJ main array area and a write voltage control area, and the write voltage control area includes: a reference resistor, an MTJ resistor, and a write voltage adjustment circuit. Among them, the reference resistor is connected to the write voltage adjustment circuit, and the reference resistor value of the reference resistor is mainly used to indirectly reflect the size of the write voltage. The reference resistor value can be manually adjusted, and when the reference resistor value is adjusted, the write voltage will also be adjusted; the MTJ resistor is connected to the write voltage adjustment circuit, and the MTJ resistor value of the MTJ resistor is used to reflect the resistance of the MTJ main array area in the memory, and the MTJ resistor cannot be manually adjusted. The MTJ resistor will only fluctuate with the MTJ main array area according to the process requirements; the write voltage adjustment circuit is used to compare the reference resistor value and the MTJ resistor value, and adjust the reference resistor value according to the relationship between the reference resistor value and the MTJ resistor value, and then adjust the write voltage so that the reference resistor value is adjusted to be the same as the MTJ resistor value.

[0102] Among them, it should be noted that the specific forms of the reference resistor and the MTJ resistor are not limited in this application. It only needs to meet the requirement that the reference resistor can be adjusted and the requirement that the MTJ resistor fluctuates with the MTJ main array area. This application does not limit it and can be set according to the needs of the user.

[0103] It should also be noted that the write voltage regulation circuit in the embodiment of the present application is not limited in the present application to the specific structure of the circuit, and only needs to meet the requirements and can be set according to the needs of the user.

[0104] The present application provides a memory for a write application voltage control method, comprising: an MTJ main array area and a write voltage control area; wherein the write voltage control area comprises: a reference resistor, an MTJ resistor and a write voltage adjustment circuit; wherein the reference resistor is connected to the write voltage adjustment circuit; the MTJ resistor is connected to the write voltage adjustment circuit; the write voltage adjustment circuit is used to compare the reference resistor value and the MTJ resistor value, and adjust the write voltage according to the relationship between the reference resistor value and the MTJ resistor value. The size of the resistance corresponding to the reference resistor in the present application is used to indirectly reflect the size of the write voltage, and the size of the resistance corresponding to the MTJ resistor is used to indirectly reflect the size of the voltage when data is written, wherein the reference resistor value can be adjusted through the write voltage adjustment circuit, and the MTJ resistor is not adjustable. Therefore, the present application indirectly reflects the relationship between the write voltage and the voltage when data is written by comparing the reference resistor value and the MTJ resistor value, and adjusts the reference resistor value according to the relationship between the reference resistor value and the MTJ resistor value, and indirectly adjusts the write voltage. This ensures that the write voltage and the voltage when data is written are as equal as possible, avoiding the problem of data not being written to the memory due to the voltage being lower than the write voltage when data is written, and the problem of reduced memory durability due to the voltage being higher than the write voltage when data is written.

[0105] Based on the above embodiments, as a preferred embodiment, the write voltage adjustment circuit includes: a resistance comparison circuit, a digital logic circuit and a write voltage adjustment circuit;

[0106] The input end of the resistance comparison circuit is connected to the reference resistor and the MTJ resistor respectively, and the output end of the resistance comparison circuit is connected to the input end of the digital logic circuit; it is used to compare the resistance value of the reference resistor and the resistance value of the MTJ resistor;

[0107] The output end of the digital logic circuit is connected to the input end of the write voltage adjustment circuit, and is used to transmit the comparison result to the write voltage adjustment circuit, so that the write voltage adjustment circuit adjusts the write voltage according to the comparison result.

[0108] In a specific embodiment, the write voltage adjustment circuit is used to compare the reference resistance value and the MTJ resistance value, and adjust the write voltage according to the relationship between the reference resistance value and the MTJ resistance value. Therefore, as a preferred embodiment, it includes a resistance comparison circuit, a digital logic circuit and a write voltage adjustment circuit, and at the same time, the adjustment strength of adjusting the value of the reference resistance is set to different gears. The schematic diagram of the resistance comparison circuit is shown in FIG. Figure 4As shown, R-ary is the MTJ resistor, R-ref is the reference resistor, SA is the comparator, VDD and VSS are both power supply terminals, ENb is the enable terminal, VCLAMP and VREF are different voltage input terminals, the circuit also includes a latch and an XOR gate, and SA-OUT is the output terminal of the SA comparator, and CK is a pin of the latch. The comparator is used to compare the size of the MTJ resistor and the reference resistor, and store the result in the latch. The schematic diagram of the digital logic circuit is shown in Figure 5 As shown, the digital logic circuit as a whole is a digital logic unit, wherein the input end of the digital logic unit is the output end of the SA comparator and an input end (SET-EN) for representing the flag bit, and the output ends TRIM3~TRIM0 are the control ends of the write voltage adjustment circuit. The digital logic unit is used to repeatedly judge that the flag bit SET-EN=0, SA-OUT=0, then the adjustment gear of the write voltage is increased by one level, that is, the reference resistance is decreased by one level; when SET-EN=0, SA-OUT=1, then the adjustment gear of the write voltage is decreased by one level, that is, the reference resistance is increased by one level, and when SET-EN=1 (that is, when the results of two adjacent comparisons are different, the previous one is increased by one level, and this time it is decreased by one level, or the previous one is decreased by one level, and this time it is increased by one level, it is regarded as the resistance value is similar, and SET-EN=1 at this time), then the adjustment is stopped and the process is terminated. The schematic diagram of the write voltage adjustment circuit is shown as follows Figure 6 As shown, TRIM3~TRIM0 in the figure is Figure 5 TRIM3 to TRIM0 in the figure are connected to adjust the write voltage. VWB, VWL and VSS in the figure are all voltage input terminals. The overall control is performed through the adjustment gear output by the digital logic circuit.

[0109] It should be noted that the resistance comparison circuit, digital logic circuit and write voltage adjustment circuit provided in the embodiment of the present application are only one possible implementation method, but are not limited to only this implementation method and can be set according to user needs.

[0110] It should also be noted that Figure 5 TRIM3~TRIM0 in is not only used to control Figure 6 The control terminal in the control unit is also used to control the reference resistor. As a preferred embodiment, the reference resistor includes: a decoder, a basic resistor and N resistor units, wherein N ≥ 2, such as Figure 7As shown, the base resistor is R, and the unit resistor is r1-rn. The base resistor and N resistor units are connected in sequence; the decoder is respectively connected to the control end of each resistor unit (which can be indirectly understood as Trim-0~Trim-n in the figure) to control whether each resistor unit is connected to the circuit. The resistor unit includes a unit resistor and a switch; the input end of the unit resistor is connected to the output end of the base resistor or the previous unit resistor, and the output end of the unit resistor is connected to the input end of the switch and the input end of the next unit resistor; the output end of the switch is connected to the output end of the next switch; and the control end of the switch is connected to the decoder. In simple terms, the reference resistor is composed of a decoder, a base resistor, N unit resistors and corresponding switches. By adjusting the input control of the decoder to open the switches corresponding to different unit resistors, the reference resistor corresponding to the corresponding reference resistor value is obtained, where the number of unit resistors is at least one.

[0111] The MTJ resistor includes M parallel MTJ array units; M≥2; wherein the input ends of each parallel MTJ array unit are connected, and the output ends of each parallel MTJ array unit are connected, wherein each parallel MTJ array unit is composed of n MTJs connected in series, and n≥2.

[0112] Based on the above embodiments, as a preferred embodiment, in a specific embodiment, as Figure 8 As shown, in general, the MTJ resistor is composed of a large number of parallel MTJ array units (MTJ1-MTJn), the purpose of which is to ensure that even if a parallel MTJ array unit fails, it will not affect the overall use.

[0113] It should be noted that the reference resistor may be a poly resistor or a metal resistor, etc., and this application does not limit this.

[0114] It should also be noted that the structure of the reference resistor and the structure of the MTJ resistor provided in the embodiment of the present application are only one possible implementation method, but are not limited to only this implementation method and can be set according to user needs.

[0115] The present application provides a memory for a write application voltage control method, comprising: an MTJ main array area and a write voltage control area; wherein the write voltage control area comprises: a reference resistor, an MTJ resistor and a write voltage adjustment circuit; wherein the reference resistor is connected to the write voltage adjustment circuit; the MTJ resistor is connected to the write voltage adjustment circuit; the write voltage adjustment circuit comprises: a resistance comparison circuit, a digital logic circuit and a write voltage adjustment circuit; the input end of the resistance comparison circuit is respectively connected to the reference resistor and the MTJ resistor, and the output end of the resistance comparison circuit is connected to the input end of the digital logic circuit; used to compare the reference resistor value and the MTJ resistor value; the output end of the digital logic circuit is connected to the input end of the write voltage adjustment circuit, and is used to transmit the comparison result to the write voltage adjustment circuit, so that the write voltage adjustment circuit adjusts the write voltage according to the comparison result. The resistance value corresponding to the reference resistor in the present application is used to indirectly reflect the magnitude of the write voltage, and the resistance value corresponding to the MTJ resistor is used to indirectly reflect the magnitude of the voltage when data is written, wherein the reference resistor resistance can be adjusted through the write voltage adjustment circuit, while the MTJ resistor is not adjustable. Therefore, the present application indirectly reflects the relationship between the write voltage and the voltage when data is written by comparing the reference resistance value and the MTJ resistance value, and adjusts the reference resistance value according to the relationship between the reference resistance value and the MTJ resistance value, thereby indirectly adjusting the write voltage. This ensures that the write voltage and the voltage when data is written are as equal as possible, thereby avoiding the problem of data not being written to the memory due to the voltage being less than the write voltage when data is written, and the problem of reduced memory durability due to the voltage being greater than the write voltage when data is written.

[0116] The above is a detailed introduction to a write voltage control method and a memory provided by the present application. The various embodiments in the specification are described in a progressive manner, and each embodiment focuses on the differences from other embodiments. The same and similar parts between the various embodiments can refer to each other. For the device disclosed in the embodiment, since it corresponds to the method disclosed in the embodiment, the description is relatively simple, and the relevant parts can refer to the method part description. It should be pointed out that for ordinary technicians in this technical field, without departing from the principles of the present application, several improvements and modifications can be made to the present application, and these improvements and modifications also fall within the scope of protection of the claims of the present application.

[0117] It should also be noted that, in this specification, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "comprise", "include" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, an element defined by the statement "comprises a ..." does not exclude the presence of other identical elements in the process, method, article or device including the element.

Claims

1. A write voltage control method, characterized in that: include: Obtain reference data corresponding to the reference resistor value; Obtain MTJ data corresponding to the MTJ resistance value; Determine a relationship between the reference resistor value and the MTJ resistor value according to a relationship between the reference data and the MTJ data; According to the relationship between the resistance value of the reference resistor and the resistance value of the MTJ resistor, the resistance value of the reference resistor is adjusted, so that the write voltage is adjusted according to the intensity of adjusting the resistance value of the reference resistor.

2. The write voltage control method according to claim 1, characterized in that: The step of obtaining reference data corresponding to the reference resistor value includes: Obtaining a reference voltage or a reference current corresponding to the resistance value of the reference resistor; The obtaining of MTJ data corresponding to the MTJ resistance value includes: An MTJ voltage or an MTJ current corresponding to the MTJ resistance value is obtained.

3. The write voltage control method according to claim 2, characterized in that: When the reference data is the reference voltage and the MTJ data is the MTJ voltage, determining the relationship between the reference resistance value and the resistance value of the MTJ resistance according to the relationship between the reference data and the MTJ data includes: When the reference voltage is greater than the MTJ voltage, it is determined that the reference resistance is greater than the MTJ resistance; When the reference voltage is less than the MTJ voltage, it is determined that the reference resistor value is less than the MTJ resistor value.

4. The write voltage control method according to claim 3, characterized in that: The step of adjusting the reference resistor value according to the relationship between the reference resistor value and the MTJ resistor value, so as to adjust the write voltage according to the intensity of adjusting the reference resistor value, comprises: When the resistance of the reference resistor is greater than the resistance of the MTJ resistor, controlling the corresponding resistor switch to reduce the resistance of the reference resistor and increase the write voltage; When the resistance value of the reference resistor is smaller than the resistance value of the MTJ resistor, the corresponding resistor switch is controlled to increase the resistance value of the reference resistor and reduce the write voltage.

5. The write voltage control method according to claim 2, characterized in that: When the reference data is the reference current and the MTJ data is the MTJ current, determining the relationship between the reference resistor value and the MTJ resistor value according to the relationship between the reference data and the MTJ data includes: When the reference current is greater than the MTJ current, it is determined that the reference resistor value is less than the MTJ resistor value; When the reference current is less than the MTJ current, it is determined that the reference resistor value is greater than the MTJ resistor value.

6. A memory device applied to the write voltage control method described in any one of 1 to 6, characterized in that: include: MTJ main array area and write voltage control area; wherein the write voltage control area includes: reference resistor, MTJ resistor and write voltage adjustment circuit; Wherein, the reference resistor is connected to the write voltage adjustment circuit; The MTJ resistor is connected to the write voltage adjustment circuit; The write voltage adjustment circuit is used to compare the reference resistor value and the MTJ resistor value, and adjust the write voltage according to the relationship between the reference resistor value and the MTJ resistor value.

7. The memory according to claim 6, characterized in that: The write voltage regulating circuit comprises: a resistance comparison circuit, a digital logic circuit and a write voltage adjusting circuit; The input end of the resistance comparison circuit is connected to the reference resistor and the MTJ resistor respectively, and the output end of the resistance comparison circuit is connected to the input end of the digital logic circuit; and is used to compare the resistance value of the reference resistor and the resistance value of the MTJ resistor; The output end of the digital logic circuit is connected to the input end of the write voltage adjustment circuit, and is used to transmit a comparison result to the write voltage adjustment circuit, so that the write voltage adjustment circuit adjusts the write voltage according to the comparison result.

8. The memory according to claim 6, characterized in that: The reference resistor includes: a decoder, a basic resistor and N resistor units, wherein N≥1; Wherein, the basic resistor and N resistor units are connected in sequence; The decoders are respectively connected to the control ends of the resistance units and are used to control whether the resistance units are connected to the circuit.

9. The memory according to claim 8, characterized in that: The resistance unit includes a unit resistor and a switch; The input end of the unit resistor is connected to the output end of the base resistor or the previous unit resistor, and the output end of the unit resistor is connected to the input end of the switch and the input end of the next unit resistor; The output end of the switch is connected to the output end of the next switch; The control end of the switch is connected to the decoder.

10. The memory according to claim 6, characterized in that: The MTJ resistor includes M parallel MTJ array units; wherein M≥2; The input ends of the MTJ array units are all connected, and the output ends of the MTJ array units are all connected; wherein each MTJ array unit is composed of n MTJs connected in series, where n≥2.

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