Heterogeneous dielectric lumped circuit element, power amplifier circuit, and power amplifier

Abstract

The invention discloses a heterogeneous dielectric lumped circuit element, a power amplifier circuit and a power amplifier, the heterogeneous dielectric lumped circuit element comprises a dielectric block and a micro-strip transmission line main medium, the dielectric block has a uniform dielectric constant, the dielectric block is embedded in the micro-strip transmission line main medium, and the dielectric block is embedded in the micro-strip transmission line main medium. The dielectric constant of the dielectric block is different from that of the microstrip transmission line main medium; when the dielectric constant of the microstrip transmission line main medium is greater than that of the medium block, equivalent series inductance is realized; when the dielectric constant of the microstrip transmission line main medium is smaller than that of the medium block, equivalent parallel capacitance is achieved. The invention aims to solve the problems of large volume and low integration level of a lumped element.

Description

Technical Field

[0001] The present invention relates to the field of power amplifiers, and in particular to a heterogeneous dielectric lumped circuit element, a power amplifier circuit and a power amplifier. Background Art

[0002] Lumped parameter components such as capacitors and inductors play an important role in many circuit systems and electronic devices. When the size of these components is much smaller than the wavelength corresponding to the operating frequency, they are called lumped components. Lumped capacitors are usually formed by two parallel conductor plates, while lumped inductors are realized by spiral winding of coils. These components are favored for their compact size, precise parameter values ​​and convenient integration with microstrip lines. Through the combination of these components, circuits can be constructed to achieve modular design and simplify the effective connection between circuit structures.

[0003] However, due to the influence of parasitic parameters, lumped components are mainly suitable for the low-frequency part of the microwave frequency band and are difficult to extend to high-frequency circuit design. In the high-frequency region, although capacitors and inductors can be simulated by distributed parameter technology, such as constructing capacitors through cross-finger structures and realizing inductors through the length of transmission lines, these distributed components are larger than lumped components and are close to the working wavelength, and have low integration with various transmission lines. Summary of the invention

[0004] In view of the above-mentioned deficiencies in the prior art, an object of the present invention is to provide a heterogeneous dielectric lumped circuit element, a power amplifier circuit and a power amplifier to solve the problems of large volume and low integration of lumped elements.

[0005] The technical solution of the present invention is as follows:

[0006] The present invention provides a heterogeneous dielectric lumped circuit element, comprising:

[0007] A dielectric block and a main dielectric of a microstrip transmission line, wherein the dielectric block has a uniform dielectric constant, the dielectric block is embedded in the main dielectric of the microstrip transmission line, and the dielectric constant of the dielectric block is different from the dielectric constant of the main dielectric of the microstrip transmission line;

[0008] When the dielectric constant of the main medium of the microstrip transmission line is greater than the dielectric constant of the dielectric block, the equivalent series inductance of the heterogeneous dielectric lumped circuit element;

[0009] When the dielectric constant of the main medium of the microstrip transmission line is smaller than the dielectric constant of the dielectric block, the heterogeneous dielectric lumped circuit element is equivalent to a parallel capacitor.

[0010] Optionally, when the dielectric constant of the main medium of the microstrip transmission line is greater than the dielectric constant of the dielectric block, the equivalent inductance value of the heterogeneous dielectric lumped circuit element is calculated according to the following formula:

[0011]

[0012] Where Ld represents the equivalent inductance value, εe is the dielectric constant of the dielectric block, εh is the dielectric constant of the main medium of the microstrip transmission line, Δε=εe-εh is the difference in dielectric constant between the dielectric block and the main medium of the microstrip transmission line, ε h eff is the effective dielectric constant of the main medium of the microstrip transmission line, μ0 is the vacuum permeability, t is the width of the dielectric block, and ε0 is the vacuum dielectric constant.

[0013] Optionally, when the dielectric constant of the main medium of the microstrip transmission line is smaller than the dielectric constant of the dielectric block, the equivalent capacitance value of the heterogeneous dielectric lumped circuit element is calculated according to the following formula:

[0014]

[0015] Where Cds represents the equivalent capacitance value, εe is the dielectric constant of the dielectric block, εh is the dielectric constant of the main medium of the microstrip transmission line, Δε=εe-εh is the difference in dielectric constant between the dielectric block and the main medium of the microstrip transmission line, ε h eff is the effective dielectric constant of the main medium of the microstrip transmission line, μ0 is the vacuum permeability, t is the width of the dielectric block, and ε0 is the vacuum dielectric constant.

[0016] Optionally, the difference between the dielectric constant of the dielectric block and the dielectric constant of the main medium of the microstrip transmission line is Δε, the inductance value of the equivalent series inductance of the heterogeneous dielectric lumped circuit element is proportional to Δε, and the inductance value of the equivalent series inductance of the heterogeneous dielectric lumped circuit element is also proportional to the width of the dielectric block;

[0017] The capacitance value of the equivalent parallel capacitance of the heterogeneous dielectric lumped circuit element is proportional to Δε, and the capacitance value of the equivalent parallel capacitance of the heterogeneous dielectric lumped circuit element is also proportional to the width of the dielectric block.

[0018] Optionally, the material of the microstrip transmission line main medium and the dielectric block is any one of a ceramic material and a PCB material.

[0019] The present invention also provides a power amplifier circuit, comprising:

[0020] An input matching circuit, wherein the input matching circuit is used to receive an external signal and output the external signal after performing impedance matching;

[0021] a signal amplifying circuit, wherein the input end of the signal amplifying circuit is connected to the output end of the input matching circuit, and the signal amplifying circuit is used to amplify the external signal output by the input matching circuit and then output an amplified signal;

[0022] An output matching circuit comprises a second bias circuit and the heterogeneous dielectric lumped circuit element as described above, wherein the input end of the second bias circuit is connected to the output end of the signal amplifying circuit, and the output end of the heterogeneous dielectric lumped circuit element is used to connect to a load. The output matching circuit matches the output impedance of the power amplifier with the load through the second bias circuit and the heterogeneous dielectric lumped circuit element and then outputs the amplified signal to the load.

[0023] Optionally, the heterogeneous dielectric lumped circuit element has an equivalent series inductance.

[0024] Optionally, the signal amplification circuit includes:

[0025] An active transistor, wherein a gate of the active transistor is connected to the output end of the input matching circuit, a drain of the active transistor is connected to the input end of the output matching circuit, and a source of the active transistor is grounded.

[0026] Optionally, the input matching circuit includes:

[0027] A first bias circuit, used for biasing an external signal before outputting it;

[0028] The impedance matching circuit is used to output an external signal after performing impedance matching.

[0029] The present invention also provides a power amplifier, comprising the power amplifier circuit as described above.

[0030] The technical solution of the present invention forms a heterogeneous dielectric lumped circuit element through a dielectric block with different dielectric constants and a main dielectric of a microstrip transmission line. The dielectric block has a uniform dielectric constant and is embedded in the main dielectric of the microstrip transmission line. When the dielectric constant of the main dielectric of the microstrip transmission line is greater than the dielectric constant of the dielectric block, the heterogeneous dielectric lumped circuit element is equivalent to a series inductor. When the dielectric constant of the main dielectric of the microstrip transmission line is less than the dielectric constant of the dielectric block, the heterogeneous dielectric lumped circuit element is equivalent to a parallel capacitor. In this way, the present solution forms a heterogeneous dielectric lumped circuit element through a dielectric block with different dielectric constants and a main dielectric of a microstrip transmission line, thereby realizing the function of a capacitor or an inductor, and does not require an additional reserved welding position, thereby solving the problem of large volume and low integration of lumped elements. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary personnel in this field, other drawings can be obtained based on the structures shown in these drawings without paying any creative work.

[0032] Figure 1 It is an equivalent schematic diagram under different conditions of the dielectric constant of the dielectric block in the heterogeneous dielectric lumped circuit element of the present invention and the dielectric constant of the main medium of the microstrip transmission line.

[0033] Figure 2 It is a line chart comparing simulation results and theoretical calculation results of the relationship between the capacitance value and the dielectric constant difference of the heterogeneous dielectric lumped circuit element of the present invention.

[0034] Figure 3 It is a line chart comparing simulation results and theoretical calculation results of the relationship between the capacitance value of the heterogeneous dielectric lumped circuit element and the width of the dielectric block of the present invention.

[0035] Figure 4 It is a line graph comparing simulation results and theoretical calculation results of the relationship between the inductance value and the dielectric constant difference of the heterogeneous dielectric lumped circuit element of the present invention.

[0036] Figure 5 It is a line graph comparing simulation results and theoretical calculation results of the relationship between the inductance value of the heterogeneous dielectric lumped circuit element and the dielectric block width of the present invention.

[0037] Figure 6 1 is a schematic diagram of the circuit structure of an embodiment of a power amplifier circuit of the present invention. DETAILED DESCRIPTION

[0038] In order to make the purpose, technical solution and effect of the present invention clearer and more specific, the present invention is further described in detail with reference to the accompanying drawings and examples. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not used to limit the present invention.

[0039] In the embodiments and the scope of the patent application, unless the text specifically defines the article, "a", "an", "the" and "the" may also include plural forms. If there are descriptions involving "first", "second", etc. in the embodiments of the present invention, the descriptions of "first", "second", etc. are only used for descriptive purposes and cannot be understood as indicating or implying their relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" or "second" may explicitly or implicitly include at least one of the features.

[0040] It should be further understood that the term "comprising" used in the specification of the present invention refers to the presence of the features, integers, steps, operations, elements and / or components, but does not exclude the presence or addition of one or more other features, integers, steps, operations, elements, components and / or groups thereof. It should be understood that when an element is said to be "connected" or "coupled" to another element, it can be directly connected or coupled to the other element, or there can also be intermediate elements. In addition, the "connection" or "coupling" used herein can include wireless connection or wireless coupling. The term "and / or" used herein includes all or any unit and all combinations of one or more associated listed items.

[0041] It will be understood by those skilled in the art that, unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as generally understood by those skilled in the art in the art to which the present invention belongs. It should also be understood that terms such as those defined in general dictionaries should be understood to have meanings consistent with the meanings in the context of the prior art, and will not be interpreted with idealized or overly formal meanings unless specifically defined as herein.

[0042] In addition, the technical solutions between the various embodiments can be combined with each other, but it must be based on the fact that ordinary technicians in the field can implement it. When the combination of technical solutions is contradictory or cannot be implemented, it should be deemed that such combination of technical solutions does not exist and is not within the scope of protection required by the present invention.

[0043] Lumped parameter components such as capacitors and inductors play an important role in many circuit systems and electronic devices. When the size of these components is much smaller than the wavelength corresponding to the operating frequency, they are called lumped components. Lumped capacitors are usually formed by two parallel conductor plates, while lumped inductors are realized by spiral winding of coils. These components are favored for their compact size, precise parameter values ​​and convenient integration with microstrip lines. Through the combination of these components, circuits can be constructed to achieve modular design and simplify the effective connection between circuit structures.

[0044] However, due to the influence of parasitic parameters, lumped components are mainly suitable for the low-frequency part of the microwave frequency band and are difficult to extend to high-frequency circuit design. In the high-frequency region, although capacitors and inductors can be simulated by distributed parameter technology, such as constructing capacitors through cross-finger structures and realizing inductors through the length of transmission lines, these distributed components are larger than lumped components and are close to the working wavelength, and have low integration with various transmission lines.

[0045] In order to solve the above problems, the present invention proposes a heterogeneous dielectric lumped circuit element.

[0046] Reference Figure 1, in one embodiment, comprises a heterogeneous dielectric lumped circuit element:

[0047] A dielectric block and a main dielectric of a microstrip transmission line, wherein the dielectric block has a uniform dielectric constant, the dielectric block is embedded in the main dielectric of the microstrip transmission line, and the dielectric constant of the dielectric block is different from the dielectric constant of the main dielectric of the microstrip transmission line;

[0048] When the dielectric constant of the main medium of the microstrip transmission line is greater than the dielectric constant of the dielectric block, the equivalent series inductance of the heterogeneous dielectric lumped circuit element;

[0049] When the dielectric constant of the main medium of the microstrip transmission line is smaller than the dielectric constant of the dielectric block, the heterogeneous dielectric lumped circuit element is equivalent to a parallel capacitor.

[0050] In the present embodiment, the structure of the heterogeneous dielectric lumped circuit element is formed by embedding a dielectric block with uniform dielectric constant into a microstrip transmission line dielectric, and the dielectric block and the main dielectric of the microstrip transmission line have different dielectric constants; the discontinuity of the electromagnetic characteristics of the microstrip transmission line caused by the insertion of the dielectric block in the main dielectric of the microstrip transmission line will show the characteristics of equivalent parallel capacitance or series inductance. Specifically, part of the main dielectric in the microstrip transmission line is replaced by a dielectric block with uniform dielectric constant, and the dielectric constant of the dielectric block is different from the dielectric constant of the main dielectric of the microstrip. When the dielectric constant of the dielectric block is greater than the dielectric constant of the main dielectric, an equivalent parallel capacitance is formed, and when the dielectric constant of the dielectric block is less than the dielectric constant of the main dielectric, an equivalent series inductance is formed. For details, please refer to Figure 1 , where Δε is the difference in dielectric constant between the dielectric block and the main medium of the microstrip transmission line.

[0051] It is understandable that based on the electromagnetic characteristics of the dielectric block and the main dielectric of the microstrip transmission line, this heterogeneous dielectric lumped circuit element equivalent to an inductor or capacitor is applied to the design of the power amplifier, which can be used as the input or output matching of the power amplifier, thus having a higher degree of integration and a lower cost. Because when designing the RF microwave power amplifier, the input and output will be impedance matched to ensure less electromagnetic loss and higher output power and efficiency. Traditional parallel plate capacitors or winding inductors as impedance matching circuits also require specific welding positions to be reserved, which increases the complexity of circuit design. In addition, as the circuit frequency increases, the circuit model of traditional lumped components in the high frequency band will become more complex, and the electromagnetic characteristics of capacitors or inductors in different packages are also different, making it difficult to accurately model.

[0052] The use of heterogeneous dielectric lumped circuit elements in this solution as the input and output matching circuits of the power amplifier does not require additional reserved welding positions, and the numerical value of the series inductor or parallel capacitor can be directly calculated according to the impedance value that needs to be matched, which can provide a more accurate lumped model for circuit matching. In addition, the design has a simple structure, and compared with high and low impedance line matching circuits, there is no discontinuous high-order mode excitation. Furthermore, in practical applications, the materials of the dielectric block and the main dielectric of the microstrip transmission line can be any two dielectric materials with different dielectric constants. And when actually designing the matching circuit of the power amplifier, these two lumped elements with different properties can be introduced according to specific needs to meet the design requirements, namely, series inductor and parallel capacitor. Figure 1 Where L represents the equivalent series inductance of the heterogeneous dielectric lumped circuit elements, C represents the equivalent parallel capacitance of the heterogeneous dielectric lumped circuit elements, h is the thickness of the main medium of the microstrip transmission line, l is the line width of the transmission line in the main medium of the microstrip transmission line, and the thickness of the main medium of the microstrip transmission line and the line width of the transmission line in the main medium of the microstrip transmission line jointly determine the characteristic impedance of the main medium of the microstrip transmission line.

[0053] The technical solution of the present invention forms a heterogeneous dielectric lumped circuit element through a dielectric block with different dielectric constants and a main dielectric of a microstrip transmission line. The dielectric block has a uniform dielectric constant and is embedded in the main dielectric of the microstrip transmission line. When the dielectric constant of the main dielectric of the microstrip transmission line is greater than the dielectric constant of the dielectric block, the heterogeneous dielectric lumped circuit element is equivalent to a series inductor. When the dielectric constant of the main dielectric of the microstrip transmission line is less than the dielectric constant of the dielectric block, the heterogeneous dielectric lumped circuit element is equivalent to a parallel capacitor. In this way, the present solution forms a heterogeneous dielectric lumped circuit element through a dielectric block with different dielectric constants and a main dielectric of a microstrip transmission line, thereby realizing the function of a capacitor or an inductor, and does not require an additional reserved welding position, thereby solving the problem of large volume and low integration of lumped elements.

[0054] In one embodiment, when the dielectric constant of the main medium of the microstrip transmission line is greater than the dielectric constant of the dielectric block, the equivalent inductance value of the heterogeneous dielectric lumped circuit element is calculated according to the following formula:

[0055]

[0056] In another embodiment, when the dielectric constant of the main medium of the microstrip transmission line is less than the dielectric constant of the dielectric block, the equivalent capacitance value of the heterogeneous dielectric lumped circuit element is calculated according to the following formula:

[0057]

[0058] In the above formula, Ld represents the equivalent inductance value, Cd represents the equivalent capacitance value, εe is the dielectric constant of the dielectric block, εh is the dielectric constant of the main medium of the microstrip transmission line, Δε=εe-εh is the difference in dielectric constant between the dielectric block and the main medium of the microstrip transmission line, ε h eff is the effective dielectric constant of the main medium of the microstrip transmission line, μ0 is the vacuum magnetic permeability, t is the width of the dielectric block, and ε0 is the vacuum dielectric constant. It can be seen from the above formula that when the material of the main medium of the microstrip transmission line is determined, the inductance value or capacitance value of the heterogeneous dielectric lumped element proposed in the present invention can be determined by the difference between the dielectric constant εe of the dielectric block and the relative dielectric constant εh of the main medium, as well as the width t of the dielectric block. Therefore, in practical applications, when heterogeneous dielectric lumped circuit elements are applied in circuits, such as the input and output matching circuits of power amplifiers, dielectric blocks of different widths, as well as dielectric blocks of different materials and the main medium of the microstrip transmission line can be selected according to the actual capacitance or inductance requirements of the power amplifier.

[0059] In one embodiment, the difference between the dielectric constant of the dielectric block and the dielectric constant of the main medium of the microstrip transmission line is Δε, the inductance value of the equivalent series inductance of the heterogeneous dielectric lumped circuit element is proportional to Δε, and the inductance value of the equivalent series inductance of the heterogeneous dielectric lumped circuit element is also proportional to the width of the dielectric block;

[0060] The capacitance value of the equivalent parallel capacitance of the heterogeneous dielectric lumped circuit element is proportional to Δε, and the capacitance value of the equivalent parallel capacitance of the heterogeneous dielectric lumped circuit element is also proportional to the width of the dielectric block.

[0061] In this embodiment, it can be seen from the above formula that when the main medium of the microstrip transmission line is determined, the equivalent capacitance and inductance of the heterogeneous dielectric lumped element proposed by the present invention can be determined by the difference between the relative dielectric constant εe of the dielectric strip and the relative dielectric constant εh of the main medium, as well as the width t of the dielectric block. Figure 2 and Figure 3 , we can know the relationship between the equivalent lumped parallel capacitance of heterogeneous dielectrics and the dielectric constant difference Δε and the width t of the dielectric block, where λd is the operating wavelength of the model. The capacitance value of the equivalent lumped parallel capacitance of heterogeneous dielectrics is proportional to the dielectric constant difference Δε and also proportional to the dielectric block width t. Figure 2 These are the simulation results and theoretical calculation results when t = λd / 85 is kept constant. Figure 3 This is the result of simulation and theoretical calculation under the condition of keeping Δε=7.7 unchanged. The simulation result is also basically consistent with the theoretical value, which proves the accuracy of the calculation formula proposed by the present invention.

[0062] Figure 4 and Figure 5It reflects the relationship between the equivalent lumped series inductance of heterogeneous dielectrics, the difference in dielectric constant Δε, and the width t of the dielectric block. Figure 4 and Figure 5 It can be seen that the inductance value of the equivalent lumped series inductance of heterogeneous dielectrics is proportional to the dielectric constant difference Δε and is also proportional to the dielectric block width t. Figure 4 These are the simulation results and theoretical calculation results when t = λd / 85 is kept constant. Figure 5 This is the result of simulation and theoretical calculation under the condition of keeping Δε=-7.7 unchanged. The simulation result is also basically consistent with the theoretical value, which proves the accuracy of the calculation formula proposed by the present invention.

[0063] In one embodiment, the material of the microstrip transmission line main medium and the dielectric block is any one of a ceramic material and a PCB material.

[0064] In this embodiment, the ceramic material can be aluminum oxide (Al2O3), aluminum nitride (AlN) and silicon nitride (Si3N4), etc., the PCB material can be epoxy glass fiber composite material (FR-4) and polytetrafluoroethylene (PTFE), etc., and the dielectric block can also use Rogerse RT5880 material. The specific material can be selected according to actual needs. It can be understood that in practical applications, the designed heterogeneous dielectric material is suitable for any two dielectric materials with different dielectric constants. When actually designing the matching circuit of the power amplifier, these two lumped elements with different properties can be introduced according to specific needs to meet the design requirements. For example, the main medium of the microstrip transmission line is an Al2O3 ceramic substrate with a dielectric constant of 9.9, a loss tangent of 0.0001, and a substrate thickness of 0.508 mm. The dielectric block in the output matching circuit is Rogerse RT5880 material with a corresponding dielectric constant of 2.2 and a loss tangent of 0.0009. At this time, the dielectric constant of the main medium of the microstrip transmission line is greater than the dielectric constant of the dielectric block. The heterogeneous dielectric lumped circuit elements can be equivalent to series inductance as part of the output matching in the power amplifier, or can be a combination of capacitors or inductors as part of the input matching in the power amplifier.

[0065] The invention also provides a power amplifier circuit.

[0066] Reference Figure 6 In one embodiment, the power amplifier circuit comprises:

[0067] An input matching circuit 10, wherein the input matching circuit 10 is used to receive an external signal and output the external signal after performing impedance matching;

[0068] A signal amplifying circuit 20, wherein the input end of the signal amplifying circuit 20 is connected to the output end of the input matching circuit 10, and the signal amplifying circuit 20 is used to amplify the external signal output by the input matching circuit 10 and then output an amplified signal;

[0069] The output matching circuit 30 includes a second bias circuit and the heterogeneous dielectric lumped circuit element as described above, wherein the input end of the second bias circuit is connected to the output end of the signal amplifying circuit 20, and the output end of the heterogeneous dielectric lumped circuit element is used to connect to a load. The output matching circuit 30 matches the output impedance of the power amplifier with the load through the second bias circuit and the heterogeneous dielectric lumped circuit element, and then outputs the amplified signal to the load.

[0070] In this embodiment, the power amplifier circuit is mainly composed of an input matching circuit 10, a signal amplifying circuit 20 and an output matching circuit 30. The main function of the input matching circuit 10 is to match the impedance of the signal source of the external signal with the input impedance of the power amplifier circuit to maximize power transmission and reduce reflection. The input matching circuit 10 can adopt various network topologies, such as L-type, π-type or T-type networks, which are usually composed of inductors and capacitors. The signal amplifying circuit 20 is responsible for amplifying the input signal, which can be specifically implemented by transistors. Commonly used transistor types include bipolar transistors FET field effect transistors, such as MOSFET and JFE. Suitable transistors can be selected according to application requirements, considering their gain, frequency response, power handling capability and linearity parameters. The function of the output matching circuit 30 is to match the output impedance of the power amplifier circuit with the load (such as an antenna or a speaker) to ensure maximum power transmission and reduce signal reflection. The bias circuit can also be designed into the specific input and output matching circuits 30. Resistor TL2 can constitute the second bias circuit in the output matching circuit 30. The heterogeneous dielectric lumped circuit element in the above embodiment can also be equivalent to the series inductor Ld as a part of the output matching circuit 30; VGS and VDS are the power supply terminals; and the equivalent parallel capacitor of the heterogeneous dielectric lumped circuit element can be designed according to actual conditions and requirements. It can be understood that since the above heterogeneous dielectric lumped circuit element is used in the power amplifier circuit of the present invention, the embodiment of the power amplifier circuit of the present invention includes all technical solutions of all embodiments of the above heterogeneous dielectric lumped circuit element, and the technical effects achieved are also exactly the same, which will not be repeated here.

[0071] Reference Figure 6 In one embodiment, the signal amplifying circuit 20 includes:

[0072] An active transistor, wherein a gate of the active transistor is connected to the output end of the input matching circuit 10 , a drain of the active transistor is connected to the input end of the output matching circuit 30 , and a source of the active transistor is grounded.

[0073] In this embodiment, the signal amplifying circuit 20 may be composed of a plurality of active transistors. Figure 6 Q1 in the figure may specifically adopt a 0.25 μm gallium nitride high electron mobility transistor (GaN HEMT), or other types of active transistors may be selected according to actual conditions and user needs.

[0074] Reference Figure 6 In one embodiment, the input matching circuit 10 comprises:

[0075] A first bias circuit, used for biasing an external signal before outputting it;

[0076] The impedance matching circuit is used to output an external signal after performing impedance matching.

[0077] In this embodiment, the input matching circuit 10 may be composed of a first bias circuit, an impedance matching circuit, and a plurality of capacitors. Figure 6 , wherein the resistor TL1 constitutes a first bias circuit, and the capacitor C1 and the resistor R1 constitute an impedance matching circuit.

[0078] The invention also provides a power amplifier.

[0079] In one embodiment, the power amplifier includes the power amplifier circuit as described above. It is understandable that, since the power amplifier circuit described above is used in the power amplifier of the present invention, the embodiment of the power amplifier of the present invention includes all technical solutions of all embodiments of the power amplifier circuit described above, and the technical effects achieved are also exactly the same, which will not be repeated here. Further, according to the above description, the present invention can use a 0.25μm GaN HEMT process to design a power amplifier, which is a class AB power amplifier. After determining the bias voltage and stability analysis, the active transistor is load-pull and source-pull to find the maximum power output impedance point and the input conjugate matching point. The heterogeneous dielectric equivalent lumped circuit can be used for impedance matching of the input circuit and impedance matching of the output circuit; wherein load-pull and source-pull are two test techniques for evaluating and optimizing the performance of radio frequency (RF) power amplifiers. These two methods are mainly used to analyze and optimize the performance characteristics of power amplifiers under different load and source conditions, such as gain, efficiency and linearity.

[0080] It should be understood that the application of the present invention is not limited to the above examples. For ordinary technicians in this field, improvements or changes can be made based on the above description. All these improvements and changes should fall within the scope of protection of the claims attached to the present invention.

Claims

1. A heterogeneous dielectric lumped circuit element, characterized in that: include: A dielectric block and a main dielectric of a microstrip transmission line, wherein the dielectric block has a uniform dielectric constant, the dielectric block is embedded in the main dielectric of the microstrip transmission line, and the dielectric constant of the dielectric block is different from the dielectric constant of the main dielectric of the microstrip transmission line; When the dielectric constant of the main medium of the microstrip transmission line is greater than the dielectric constant of the dielectric block, the equivalent series inductance of the heterogeneous dielectric lumped circuit element; When the dielectric constant of the main medium of the microstrip transmission line is smaller than the dielectric constant of the dielectric block, the heterogeneous dielectric lumped circuit element is equivalent to a parallel capacitor.

2. The heterogeneous dielectric lumped circuit element according to claim 1, characterized in that: When the dielectric constant of the main medium of the microstrip transmission line is greater than the dielectric constant of the dielectric block, the equivalent inductance value of the heterogeneous dielectric lumped circuit element is calculated according to the following formula: Where Ld represents the equivalent inductance value, εe is the dielectric constant of the dielectric block, εh is the dielectric constant of the main medium of the microstrip transmission line, Δε=εe-εh is the difference in dielectric constant between the dielectric block and the main medium of the microstrip transmission line, ε h eff is the effective dielectric constant of the main medium of the microstrip transmission line, μ0 is the vacuum permeability, t is the width of the dielectric block, and ε0 is the vacuum dielectric constant.

3. The heterogeneous dielectric lumped circuit element according to claim 1, characterized in that: When the dielectric constant of the main medium of the microstrip transmission line is less than the dielectric constant of the dielectric block, the equivalent capacitance value of the heterogeneous dielectric lumped circuit element is calculated according to the following formula: Where Cd represents the equivalent capacitance value, εe is the dielectric constant of the dielectric block, εh is the dielectric constant of the main medium of the microstrip transmission line, Δε=εe-εh is the difference in dielectric constant between the dielectric block and the main medium of the microstrip transmission line, ε h eff is the effective dielectric constant of the main medium of the microstrip transmission line, μ0 is the vacuum permeability, t is the width of the dielectric block, and ε0 is the vacuum dielectric constant.

4. The heterogeneous dielectric lumped circuit element according to claim 1, characterized in that: The difference between the dielectric constant of the dielectric block and the dielectric constant of the main medium of the microstrip transmission line is Δε, the inductance value of the equivalent series inductance of the heterogeneous dielectric lumped circuit element is proportional to Δε, and the inductance value of the equivalent series inductance of the heterogeneous dielectric lumped circuit element is also proportional to the width of the dielectric block; The capacitance value of the equivalent parallel capacitance of the heterogeneous dielectric lumped circuit element is proportional to Δε, and the capacitance value of the equivalent parallel capacitance of the heterogeneous dielectric lumped circuit element is also proportional to the width of the dielectric block.

5. The heterogeneous dielectric lumped circuit element according to claim 1, characterized in that: The material of the microstrip transmission line main medium and the medium block is any one of ceramic material and PCB material.

6. A power amplifier circuit, characterized in that: include: An input matching circuit, wherein the input matching circuit is used to receive an external signal and output the external signal after performing impedance matching; a signal amplifying circuit, wherein the input end of the signal amplifying circuit is connected to the output end of the input matching circuit, and the signal amplifying circuit is used to amplify the external signal output by the input matching circuit and then output an amplified signal; An output matching circuit comprises a second bias circuit and a heterogeneous dielectric lumped circuit element as described in any one of claims 1 to 5, wherein an input end of the second bias circuit is connected to an output end of the signal amplifying circuit, and an output end of the heterogeneous dielectric lumped circuit element is used to connect a load, and the output matching circuit matches an output impedance of a power amplifier with a load through the second bias circuit and the heterogeneous dielectric lumped circuit element and then outputs the amplified signal to the load.

7. The power amplifier circuit according to claim 6, characterized in that: The heterogeneous dielectric lumped circuit element has an equivalent series inductance.

8. The power amplifier circuit according to claim 6, wherein: The signal amplification circuit comprises: An active transistor, wherein a gate of the active transistor is connected to the output end of the input matching circuit, a drain of the active transistor is connected to the input end of the output matching circuit, and a source of the active transistor is grounded.

9. The power amplifier circuit according to claim 6, wherein: The input matching circuit comprises: A first bias circuit, used for biasing an external signal before outputting it; The impedance matching circuit is used to output an external signal after performing impedance matching.

10. A power amplifier, characterized in that: Comprising a power amplifier circuit as described in any one of claims 6 to 9.

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