Hole transport composition, hole transport layer and preparation method thereof, and perovskite cell

Abstract

The invention discloses a hole transport composition, a hole transport layer, a preparation method of the hole transport layer, a perovskite cell, a photovoltaic module and electric equipment. The hole transport composition comprises a self-assembled monomolecular layer material and an additive, wherein the additive has a structure as shown in a formula I. An additive with a specific structure, namely phosphine oxide containing three benzene rings, is introduced into an SAMs material, so that the anchoring effect of an SAMs layer on a perovskite layer is enhanced, the stability of the SAMs layer is improved, the problem that more residues exist at the bottom of a perovskite cell such as a perovskite crystalline silicon laminated cell is solved, and the service life of the perovskite cell is prolonged. Therefore, the photoelectric conversion efficiency and the preparation uniformity of the device are improved. # imgabs0 #

Description

Technical Field

[0001] The present invention belongs to the technical field of perovskite cells, and specifically relates to a hole transport composition, a hole transport layer and a preparation method thereof, a perovskite cell, a photovoltaic module and an electrical device. Background Art

[0002] The application of self-assembled monolayers (SAMs) in perovskite-silicon tandem solar cells is a cutting-edge research field that combines organic chemistry, nanotechnology, and photovoltaic technology. This material is used to improve the performance of cells due to its unique properties, especially in interface engineering. However, due to the poor stability of the SAMs material itself, the photoelectric conversion efficiency of the device is reduced and the preparation uniformity is poor. Summary of the invention

[0003] The present invention aims to solve one of the technical problems in the related art at least to a certain extent. To this end, one object of the present invention is to provide a hole transport composition, which uses SAMs materials and additives to improve the stability of the hole transport layer, thereby improving the photoelectric conversion efficiency of the device and the preparation uniformity.

[0004] Specifically, the first aspect of the present invention provides a hole transport composition, comprising a self-assembled monolayer material and an additive, wherein the additive has a structure shown in Formula I:

[0005]

[0006] in,

[0007] R1, R2, R3, R4, R5, R6, R7, R8, R9, R 10 , R 11 , R 12 , R 13 , R 14 , R 15 Each is independently selected from hydrogen, halogen, hydroxyl, amino, carboxyl, nitro, C2-C6 alkenyl, C1-C6 alkoxycarbonyl, C1-C6 haloalkyl, C1-C6 hydroxyalkyl, C1-C6 alkylamino, C1-C6 alkyl, C1-C6 alkoxy, C6-C 20 Any of aryl and 5-18 membered heteroaryl.

[0008] The present invention introduces an additive with a specific structure into the SAMs material, namely, phosphine oxide containing three benzene rings, and the additive can react with Pb in the perovskite precursor through a P=O group. 2+A complexation occurs to strengthen the anchoring effect of the SAMs layer (i.e., the hole transport layer) on the perovskite layer and improve the stability of the SAMs layer. At the same time, the three benzene rings in the additive are also beneficial to improving the stability of the SAMs layer and reducing the problem of more residues at the bottom of perovskite cells such as perovskite crystalline silicon stacked cells, thereby improving the photoelectric conversion efficiency of the device and the uniformity of preparation.

[0009] According to some embodiments of the present invention, the additive satisfies at least one of the following conditions:

[0010] (1) At least one of R1, R2, R3, R4 and R5 is independently selected from halogen, hydroxyl, amino, carboxyl, nitro, C2-C6 alkenyl, C1-C6 alkoxycarbonyl, C1-C6 haloalkyl, C1-C6 hydroxyalkyl, C1-C6 alkylamino, C1-C6 alkyl, C1-C6 alkoxy, C6-C 20 Any one of aryl and 5-18 membered heteroaryl;

[0011] (2) R6, R7, R8, R9 and R 10 At least one of them is independently selected from halogen, hydroxyl, amino, carboxyl, nitro, C2-C6 alkenyl, C1-C6 alkoxycarbonyl, C1-C6 haloalkyl, C1-C6 hydroxyalkyl, C1-C6 alkylamino, C1-C6 alkyl, C1-C6 alkoxy, C6-C 20 Any one of aryl and 5-18 membered heteroaryl;

[0012] (3)R 11 , R 12 , R 13 , R 14 and R 15 At least one of them is independently selected from halogen, hydroxyl, amino, carboxyl, nitro, C2-C6 alkenyl, C1-C6 alkoxycarbonyl, C1-C6 haloalkyl, C1-C6 hydroxyalkyl, C1-C6 alkylamino, C1-C6 alkyl, C1-C6 alkoxy, C6-C 20 Any of aryl and 5-18 membered heteroaryl.

[0013] The use of triphenylphosphine oxide substituted with a substituent is more conducive to improving the stability of the SAMs layer and reducing the problem of more residues at the bottom of perovskite cells such as perovskite crystalline silicon stacked cells, thereby improving the photoelectric conversion efficiency of the device and the preparation uniformity.

[0014] According to some embodiments of the present invention, the additive satisfies at least one of the following conditions:

[0015] (1) at least one of R1, R2, R3, R4 and R5 is independently selected from halogen;

[0016] (2) R6, R7, R8, R9 and R 10 At least one of them is independently selected from halogen;

[0017] (3)R 11 , R 12 , R 13 , R 14 and R 15 At least one of them is independently selected from halogen.

[0018] The use of halogen-substituted triphenylphosphine oxide is more conducive to improving the stability of the SAMs layer.

[0019] According to some embodiments of the present invention, the additive satisfies at least one of the following conditions:

[0020] (1) at least one of R1, R2, R3, R4 and R5 is independently selected from F;

[0021] (2) R6, R7, R8, R9 and R 10 At least one of them is independently selected from F;

[0022] (3)R 11 , R 12 , R 13 , R 14 and R 15 At least one of them is independently selected from F.

[0023] The use of triphenylphosphine oxide substituted with fluorine is more conducive to improving the stability of the SAMs layer.

[0024] According to some embodiments of the present invention, the additive includes one or more of the following structures:

[0025]

[0026] The use of these additives is more conducive to improving the stability of the SAMs layer.

[0027] According to some embodiments of the present invention, the molar ratio of the self-assembled monolayer material to the additive is 1:(0.002-0.01). Optimizing the amount ratio of the SAMs material to the additive in the hole transport composition is conducive to further improving the stability of the SAMs layer.

[0028] According to some embodiments of the present invention, the self-assembled monolayer material includes one or more of [4-(3,6-dimethyl-9H-carbazole-9-yl)butyl]phosphonic acid, [2-(9H-carbazole-9-yl)ethyl]phosphonic acid, [2-(3,6-dimethoxy-9H-carbazole-9-yl)ethyl]phosphonic acid, [4-(7H-dibenzocarbazole-7-yl)butyl]phosphonic acid, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], 4,4'-cyclohexylbis[N,N-bis(4-methylphenyl)aniline. The use of these SAMs materials in combination with the additive is conducive to improving the stability of the SAMs layer.

[0029] The second aspect of the present invention provides a hole transport layer, comprising the hole transport composition of the first aspect of the present invention. Due to the use of the hole transport composition of the present invention, the hole transport layer of the present invention has high stability.

[0030] According to some embodiments of the present invention, the thickness of the hole transport layer is 1 nm-10 nm. Optimizing the thickness of the hole transport layer formed by the composition of the present invention is beneficial to improving the stability of the SAMs layer.

[0031] The third aspect of the present invention provides a method for preparing the hole transport layer of the second aspect of the present invention, comprising the following steps:

[0032] mixing a self-assembled monolayer material, an additive and a solvent to obtain a mixed solution;

[0033] The mixed solution is coated on a substrate and annealed.

[0034] According to some embodiments of the present invention, the annealing temperature is 90° C.-110° C., and the annealing time is 2 min-10 min. Optimizing the annealing temperature is beneficial to improving the stability of the SAMs layer.

[0035] The fourth aspect of the present invention provides a perovskite cell, comprising the hole transport layer of the second aspect of the present invention or the hole transport layer obtained by the method of the third aspect of the present invention. Due to the use of the hole transport layer of the present invention, the perovskite cell of the present invention has high photoelectric conversion efficiency and preparation uniformity.

[0036] According to some embodiments of the present invention, the perovskite cell includes one of a perovskite crystalline silicon stacked cell, a single-junction perovskite cell, and a multi-junction perovskite cell.

[0037] The fifth aspect of the present invention provides a photovoltaic module, comprising the perovskite cell of the fourth aspect of the present invention. The photovoltaic module of the present invention has all the advantages of the perovskite cell, which will not be described in detail here.

[0038] The sixth aspect of the present invention provides an electrical device, comprising the perovskite battery of the fourth aspect of the present invention. The electrical device of the present invention has all the advantages of the perovskite battery, which will not be described in detail here.

[0039] Additional aspects and advantages of the present invention will be given in part in the following description and in part will be obvious from the following description, or will be learned through practice of the present invention. DETAILED DESCRIPTION

[0040] The embodiments of the present invention are described in detail below. The embodiments described below are exemplary and are only used to explain the present invention, and should not be understood as limiting the present invention.

[0041] It should be noted that the terms "first" and "second" are used for descriptive purposes only and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include one or more of the features. Further, in the description of the present invention, unless otherwise specified, "multiple" means two or more, "multiple" means two or more, and "multiple knots" means two or more knots.

[0042] The endpoints and any values ​​of the ranges disclosed in this article are not limited to the precise ranges or values, and these ranges or values ​​should be understood to include values ​​close to these ranges or values. For numerical ranges, the endpoint values ​​of each range, the endpoint values ​​of each range and the individual point values, and the individual point values ​​can be combined with each other to obtain one or more new numerical ranges, which should be considered as specifically disclosed in this article.

[0043] In this document, the terms “include” or “comprising” are open expressions, that is, including the contents specified in the present invention but not excluding other contents.

[0044] The application of self-assembled monolayers (SAMs) in perovskite silicon tandem solar cells is a cutting-edge research field that combines organic chemistry, nanotechnology and photovoltaic technology. This material is used to improve the performance of cells due to its unique properties, especially in interface engineering. However, due to the poor stability of the SAMs material itself, the stability of the SAMs layer (i.e., hole transport layer) formed by it is also poor, resulting in a decrease in the photoelectric conversion efficiency of the device and poor preparation uniformity.

[0045] In order to solve the above problems, the present invention provides a hole transport composition, which introduces an additive with a specific structure into the SAMs material, namely, a phosphine oxide containing three benzene rings, and the additive can react with the Pb in the perovskite precursor through the P=O group. 2+A complexation occurs to strengthen the anchoring effect of the SAMs layer (i.e., the hole transport layer) on the perovskite layer and improve the stability of the SAMs layer. At the same time, the three benzene rings in the additive are also beneficial to improving the stability of the SAMs layer and reducing the problem of more residues at the bottom of perovskite cells such as perovskite crystalline silicon stacked cells, thereby improving the photoelectric conversion efficiency of the device and the uniformity of preparation.

[0046] The reasons why the three benzene rings in the additive improve the stability of the SAMs layer are speculated as follows: on the one hand, the benzene rings can adjust the surface properties, such as increasing hydrophobicity or reducing the tendency of intermolecular aggregation; on the other hand, the presence of benzene rings can make the interactions between SAMs molecules and between molecules and the substrate (π-π stacking effect) stronger, which is conducive to obtaining better surface coverage and molecular orientation, thereby improving the stability of the SAMs layer.

[0047] Perovskite is composed of ABX3 structure components, which are formed by the reaction of PbI2 or organic salts. "Perovskite cells such as perovskite crystalline silicon stacked cells have residues at the bottom" means that unreacted PbI2 or organic salts tend to remain at the "bottom" of the "pyramid" structure of the velvet bottom cell.

[0048] Specifically, the first aspect of the present invention provides a hole transport composition, comprising a self-assembled monolayer material and an additive, wherein the additive has a structure shown in Formula I:

[0049]

[0050] in,

[0051] R1, R2, R3, R4, R5, R6, R7, R8, R9, R 10 , R 11 , R 12 , R 13 , R 14 , R 15 Each is independently selected from hydrogen, halogen, hydroxyl, amino, carboxyl, nitro, C2-C6 alkenyl, C1-C6 alkoxycarbonyl, C1-C6 haloalkyl, C1-C6 hydroxyalkyl, C1-C6 alkylamino, C1-C6 alkyl, C1-C6 alkoxy, C6-C 20 Any of aryl and 5-18 membered heteroaryl.

[0052] In the present invention, "preparation uniformity" refers to the reproducibility between different preparation batches.

[0053] In some embodiments, the additive satisfies at least one of the following conditions:

[0054] (1) At least one of R1, R2, R3, R4 and R5 is independently selected from halogen, hydroxyl, amino, carboxyl, nitro, C2-C6 alkenyl, C1-C6 alkoxycarbonyl, C1-C6 haloalkyl, C1-C6 hydroxyalkyl, C1-C6 alkylamino, C1-C6 alkyl, C1-C6 alkoxy, C6-C 20 Any one of aryl and 5-18 membered heteroaryl;

[0055] (2) R6, R7, R8, R9 and R 10 At least one of them is independently selected from halogen, hydroxyl, amino, carboxyl, nitro, C2-C6 alkenyl, C1-C6 alkoxycarbonyl, C1-C6 haloalkyl, C1-C6 hydroxyalkyl, C1-C6 alkylamino, C1-C6 alkyl, C1-C6 alkoxy, C6-C 20 Any one of aryl and 5-18 membered heteroaryl;

[0056] (3)R 11 , R 12 , R 13 , R 14 and R 15 At least one of them is independently selected from halogen, hydroxyl, amino, carboxyl, nitro, C2-C6 alkenyl, C1-C6 alkoxycarbonyl, C1-C6 haloalkyl, C1-C6 hydroxyalkyl, C1-C6 alkylamino, C1-C6 alkyl, C1-C6 alkoxy, C6-C 20 Any of aryl and 5-18 membered heteroaryl.

[0057] The use of triphenylphosphine oxide substituted with a substituent is more conducive to improving the stability of the SAMs layer and reducing the problem of more residues at the bottom of perovskite cells such as perovskite crystalline silicon stacked cells, thereby improving the photoelectric conversion efficiency of the device and the preparation uniformity.

[0058] In some specific embodiments, the additive satisfies at least two of the above conditions.

[0059] In some specific embodiments, the additive satisfies at least three of the above conditions.

[0060] In some specific embodiments, at least one (e.g., 1, 2, 3, 4, or 5) of R1, R2, R3, R4, and R5 is independently selected from halogen, hydroxyl, amino, carboxyl, nitro, C2-C6 alkenyl, C1-C6 alkoxycarbonyl, C1-C6 haloalkyl, C1-C6 hydroxyalkyl, C1-C6 alkylamino, C1-C6 alkyl, C1-C6 alkoxy, C6-C 20 Any of aryl and 5-18 membered heteroaryl.

[0061] In some specific embodiments, R3 is selected from halogen, hydroxyl, amino, carboxyl, nitro, C2-C6 alkenyl, C1-C6 alkoxycarbonyl, C1-C6 haloalkyl, C1-C6 hydroxyalkyl, C1-C6 alkylamino, C1-C6 alkyl, C1-C6 alkoxy, C6-C 20 Any of aryl and 5-18 membered heteroaryl.

[0062] In some specific embodiments, R6, R7, R8, R9 and R 10 At least one (e.g., 1, 2, 3, 4, or 5) of the alkylene groups is independently selected from halogen, hydroxyl, amino, carboxyl, nitro, C2-C6 alkenyl, C1-C6 alkoxycarbonyl, C1-C6 haloalkyl, C1-C6 hydroxyalkyl, C1-C6 alkylamino, C1-C6 alkyl, C1-C6 alkoxy, C6-C 20 Any of aryl and 5-18 membered heteroaryl.

[0063] In some specific embodiments, R8 is selected from halogen, hydroxyl, amino, carboxyl, nitro, C2-C6 alkenyl, C1-C6 alkoxycarbonyl, C1-C6 haloalkyl, C1-C6 hydroxyalkyl, C1-C6 alkylamino, C1-C6 alkyl, C1-C6 alkoxy, C6-C 20 Any of aryl and 5-18 membered heteroaryl.

[0064] In some specific embodiments, R 11 , R 12 , R 13 , R 14 and R 15 At least one (e.g., 1, 2, 3, 4, or 5) of the alkylene groups is independently selected from halogen, hydroxyl, amino, carboxyl, nitro, C2-C6 alkenyl, C1-C6 alkoxycarbonyl, C1-C6 haloalkyl, C1-C6 hydroxyalkyl, C1-C6 alkylamino, C1-C6 alkyl, C1-C6 alkoxy, C6-C 20 Any of aryl and 5-18 membered heteroaryl.

[0065] In some specific embodiments, R 13 is selected from halogen, hydroxy, amino, carboxyl, nitro, C2-C6 alkenyl, C1-C6 alkoxycarbonyl, C1-C6 haloalkyl, C1-C6 hydroxyalkyl, C1-C6 alkylamino, C1-C6 alkyl, C1-C6 alkoxy, C6-C 20 Any of aryl and 5-18 membered heteroaryl.

[0066] In some embodiments, the additive satisfies at least one of the following conditions:

[0067] (1) at least one of R1, R2, R3, R4 and R5 is independently selected from halogen;

[0068] (2) R6, R7, R8, R9 and R 10 At least one of them is independently selected from halogen;

[0069] (3)R 11 , R 12 , R 13 , R 14 and R 15 At least one of them is independently selected from halogen.

[0070] The use of halogen-substituted triphenylphosphine oxide is more conducive to improving the stability of the SAMs layer.

[0071] In some specific embodiments, at least one (such as 1, 2, 3, 4 or 5) of R1, R2, R3, R4 and R5 are independently selected from halogen.

[0072] In some specific embodiments, R3 is selected from halogen.

[0073] In some specific embodiments, R6, R7, R8, R9 and R 10 At least one (such as 1, 2, 3, 4 or 5) of the are independently selected from halogen.

[0074] In some specific embodiments, R8 is selected from halogen.

[0075] In some specific embodiments, R 11 , R 12 , R 13 , R 14 and R 15 At least one (such as 1, 2, 3, 4 or 5) of the are independently selected from halogen.

[0076] In some specific embodiments, R 13 Selected from halogen.

[0077] In some embodiments, the additive satisfies at least one of the following conditions:

[0078] (1) at least one of R1, R2, R3, R4 and R5 is independently selected from F;

[0079] (2) R6, R7, R8, R9 and R 10 At least one of them is independently selected from F;

[0080] (3)R 11 , R 12 , R 13 , R14 and R 15 At least one of them is independently selected from F.

[0081] The use of triphenylphosphine oxide substituted with fluorine is more conducive to improving the stability of the SAMs layer.

[0082] In some specific embodiments, at least one (such as 1, 2, 3, 4 or 5) of R1, R2, R3, R4 and R5 are each independently selected from F.

[0083] In some specific embodiments, R3 is selected from F.

[0084] In some specific embodiments, R6, R7, R8, R9 and R 10 At least one (such as 1, 2, 3, 4 or 5) of the above are independently selected from F.

[0085] In some specific embodiments, R8 is selected from F.

[0086] In some specific embodiments, R 11 , R 12 , R 13 , R 14 and R 15 At least one (such as 1, 2, 3, 4 or 5) of the above are independently selected from F.

[0087] In some specific embodiments, R 13 Selected from F.

[0088] In some embodiments, the additive includes one or more of the following structures:

[0089]

[0090] The use of these additives is more conducive to improving the stability of the SAMs layer.

[0091] In some embodiments, the molar ratio of the self-assembled monolayer material to the additive may be 1:(0.002-0.01). Optimizing the amount ratio of the SAMs material to the additive in the hole transport composition is beneficial to further improve the stability of the SAMs layer.

[0092] In some specific embodiments, the molar ratio of the self-assembled monolayer material to the additive may be 1:0.002, 1:0.003, 1:0.004, 1:0.005, 1:0.006, 1:0.007, 1:0.008, 1:0.009 or 1:0.01.

[0093] In some embodiments, the self-assembled monolayer material includes one or more of [4-(3,6-dimethyl-9H-carbazole-9-yl)butyl]phosphonic acid (Me-4PACz), [2-(9H-carbazole-9-yl)ethyl]phosphonic acid (2PACz), [2-(3,6-dimethoxy-9H-carbazole-9-yl)ethyl]phosphonic acid (MeO-2PACz), [4-(7H-dibenzocarbazole-7-yl)butyl]phosphonic acid (4PADCB), poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA), and 4,4'-cyclohexylbis[N,N-bis(4-methylphenyl)aniline] (TAPC). The use of these SAMs materials in combination with the additive is conducive to improving the stability of the SAMs layer.

[0094] The second aspect of the present invention provides a hole transport layer, comprising the hole transport composition of the first aspect of the present invention. Due to the use of the hole transport composition of the present invention, the hole transport layer of the present invention has high stability.

[0095] In some embodiments, the thickness of the hole transport layer may be 1 nm to 10 nm. Optimizing the thickness of the hole transport layer formed by the composition of the present invention is beneficial to improving the stability of the SAMs layer.

[0096] In some specific embodiments, the thickness of the hole transport layer can be 1 nm, 2 nm, 3 nm, 4 nm, 5 nm, 6 nm, 7 nm, 8 nm, 9 nm, or 10 nm.

[0097] The third aspect of the present invention provides a method for preparing the hole transport layer of the second aspect of the present invention, comprising the following steps:

[0098] mixing a self-assembled monolayer material, an additive and a solvent to obtain a mixed solution;

[0099] The mixed solution is coated on a substrate and annealed.

[0100] In some embodiments, the annealing temperature may be 90° C.-110° C., and the annealing time may be 2 min-10 min. Optimizing the annealing temperature is beneficial to improving the stability of the SAMs layer.

[0101] In some embodiments, the annealing temperature can be 90°C, 95°C, 100°C, 105°C, or 110°C.

[0102] In some specific embodiments, the annealing time can be 2 min, 3 min, 4 min, 5 min, 6 min, 7 min, 8 min, 9 min or 10 min.

[0103] In some embodiments, the solvent includes an alcohol solvent such as ethanol.

[0104] In some embodiments, the coating includes deposition by any one of spin coating and slit coating.

[0105] In some embodiments, the substrate includes any one of a metal oxide substrate, a suede silicon-based cell, a copper indium gallium selenide cell, a cadmium telluride cell, and an organic solar cell, or a stacked structure of two of them. In some specific embodiments, the substrate is a suede silicon-based cell. In other specific embodiments, the substrate is a structure formed by stacking a suede silicon-based cell and a metal oxide substrate in sequence.

[0106] In some specific embodiments, the metal oxide substrate comprises nickel oxide (NiO x The thickness of the suede in the suede silicon-based battery is above 2 μm.

[0107] The fourth aspect of the present invention provides a perovskite cell, comprising the hole transport layer of the second aspect of the present invention or the hole transport layer obtained by the method of the third aspect of the present invention. Due to the use of the hole transport layer of the present invention, the perovskite cell of the present invention has high photoelectric conversion efficiency and preparation uniformity.

[0108] According to some embodiments of the present invention, the perovskite cell includes one of a perovskite crystalline silicon stacked cell, a single-junction perovskite cell, and a multi-junction perovskite cell.

[0109] In some embodiments, the perovskite cell includes a substrate, a hole transport layer, a perovskite layer, an electron transport layer, and an electrode stacked in sequence.

[0110] In some embodiments, a passivation layer is further disposed between the perovskite layer and the electron transport layer.

[0111] In some embodiments, a buffer layer is further disposed between the electron transport layer and the electrode.

[0112] In some embodiments, the substrate includes any one of a metal oxide substrate, a suede silicon-based cell, a copper indium gallium selenide cell, a cadmium telluride cell, and an organic solar cell, or a stacked structure of two of them. The metal oxide substrate includes nickel oxide (NiO x ) base.

[0113] In some embodiments, the perovskite cell of the present invention may be prepared by a method comprising the following steps:

[0114] providing a substrate;

[0115] forming a hole transport layer of the present invention on the substrate;

[0116] forming a skeleton layer on the upper surface of the hole transport layer;

[0117] forming an organic layer on the skeleton layer, and annealing to form a perovskite layer;

[0118] An electron transport layer and an electrode layer are sequentially formed on the surface of the perovskite layer.

[0119] In some specific embodiments, the skeleton layer is prepared by evaporation. The thickness of the skeleton layer may be 200nm-400nm, for example, 200nm, 250nm, 300nm, 350nm or 400nm. The material of the skeleton layer may include at least one of PbI2, PbCl2, CsBr, CsI, and PbBr2. The evaporation rate may be For example or When two or more materials are used to prepare the skeleton layer, it can be done by co-evaporation. The evaporation rate of each material can be selected according to actual needs. After the skeleton material is evaporated, annealing treatment is performed to form the skeleton layer.

[0120] In some specific embodiments, the material of the organic layer includes an organic salt. The organic salt includes at least one of formamidine hydroiodide (FAI), formamidine hydrobromide (FABr), methylammonium chloride (MACl), and formamidine hydrochloride (FACl). The organic layer is deposited on the skeleton layer by evaporation. The evaporation rate of the organic salt can be For example or The evaporated thickness of the organic salt (i.e., the thickness of the organic layer) may be 100 nm-300 nm, such as 100 nm, 150 nm, 200 nm, 250 nm, or 300 nm. After the organic layer is deposited, an annealing treatment is performed to form a perovskite layer. The annealing comprises: pre-annealing at 125° C.-135° C. (such as 125° C., 130° C., or 135° C.) for 2 min-7 min (such as 2 min, 5 min, or 7 min) in a protective atmosphere (such as nitrogen), and then annealing at 145° C.-155° C. (such as 145° C., 150° C., or 155° C.) for 10 min-30 min (such as 10 min, 20 min, or 30 min) in air with a humidity of 30%-50% (such as 30%, 40%, or 50%).

[0121] In some specific embodiments, after forming the perovskite layer and before forming the electron transport layer, a passivation layer is formed on the surface of the perovskite layer, and then an electron transport layer is formed on the surface of the passivation layer.

[0122] In some specific embodiments, the material of the passivation layer includes at least one of guanidine iodide (GUAI), oleylamine iodide (OAI), 2-thiopheneethylamine hydrochloride (TEACl), isobutylamine hydroiodide (iso-BAI), and n-butylamine hydrochloride (BACl). The preparation method of the passivation layer includes any one of spin coating, slit coating, or evaporation.

[0123] In some specific embodiments, after forming the electron transport layer and before forming the electrode layer, a buffer layer is formed on the surface of the electron transport layer, and then an electrode layer is formed on the surface of the buffer layer.

[0124] In some specific embodiments, the material of the electron transport layer includes fullerene and its derivatives (such as C 60 , C 70 PCBM is a derivative of fullerene, including

[60] PCBM and

[70] PCBM. The full name of

[60] PCBM is [6,6]-phenyl-C61-butyric acid isomethyl ester, and the full name of

[70] PCBM is [6,6]-phenyl-C71-butyric acid isomethyl ester.

[0125] In some specific embodiments, the preparation method of the electron transport layer is not particularly limited, and a conventional preparation method in the art can be used, and those skilled in the art can select according to actual needs. As some specific examples, the electron transport layer can be prepared by vacuum evaporation, magnetron sputtering, atomic layer deposition, electrochemical deposition, molecular beam evaporation, solvent-dissolved dip coating, spin coating, blade coating, slit coating, rod coating or inkjet printing.

[0126] In some specific embodiments, the material of the buffer layer includes one of bathocuproine (BCP) or atomic layer deposited tin dioxide (SnO 2 ).

[0127] In some specific embodiments, the electrode includes a metal electrode such as any one of silver (Ag), copper (Cu) or a transparent conductive oxide such as any one of indium tin oxide (ITO), indium zinc oxide (IZO), tungsten-doped indium oxide (IWO) and aluminum-doped zinc oxide (AZO).

[0128] The fifth aspect of the present invention provides a photovoltaic module, comprising the perovskite cell of the fourth aspect of the present invention. The photovoltaic module of the present invention has all the advantages of the perovskite cell, which will not be described in detail here.

[0129] The sixth aspect of the present invention provides an electrical device, comprising the perovskite battery of the fourth aspect of the present invention. The electrical device of the present invention has all the advantages of the perovskite battery, which will not be described in detail here.

[0130] Specifically, electrical equipment may include lighting elements, display elements, mobile devices, etc., and may specifically include street lights, signal indicators, insect killer lamps, electric fans, electric toys, electric tools, battery vehicles, electric vehicles, ships, spacecraft, etc., among which electric toys may include fixed or mobile electric toys, for example, game consoles, electric car toys, electric ship toys and electric airplane toys, etc., and spacecraft may include airplanes, rockets, space shuttles and spacecraft, etc.

[0131] Definitions and Explanations of Terms

[0132] The term "halogen" or "halogen atom" refers to F, Cl, Br and I.

[0133] The term "C1-C6 alkyl" means a straight-chain or branched saturated monovalent hydrocarbon group having 1, 2, 3, 4, 5 or 6 carbon atoms, for example methyl, ethyl, n-propyl, isopropyl, n-butyl, isobutyl, n-pentyl, isopentyl, n-hexyl or isohexyl.

[0134] The term "C2-C6 alkenyl" means a straight or branched unsaturated monovalent hydrocarbon group having 2, 3, 4, 5 or 6 carbon atoms, for example, ethenyl, propenyl, butenyl, pentenyl, hexenyl and the like.

[0135] The term "C1-C6 alkoxy" means a C1-C6 alkyl group connected to other groups of the molecule through an oxygen atom, wherein the C1-C6 alkyl group is a C1-C6 straight chain alkyl group or a C3-C6 branched chain alkyl group, wherein the C1-C6 straight chain alkyl group or the C3-C6 branched chain alkyl group has the definition as described in the present invention. Examples of C1-C6 alkoxy groups include, but are not limited to, methoxy, ethoxy, n-propoxy, isopropoxy, and the like.

[0136] The term "C1-C6 alkoxycarbonyl" means that a C1-C6 alkoxy group is connected to another group of the molecule through a carbonyl group, wherein the C1-C6 alkoxy group has the definition as described in the present invention. Examples of C1-C6 alkoxycarbonyl include, but are not limited to, methoxycarbonyl, ethoxycarbonyl, n-propoxycarbonyl, isopropoxycarbonyl, and the like.

[0137] The term "C1-C6 haloalkyl" refers to a C1-C6 alkyl group substituted by one or more halogens, wherein C1-C6 alkyl has the definition as described herein. In some embodiments, the term "C1-C6 haloalkyl" refers to a C1-C6 alkyl group substituted by one halogen; in other embodiments, the term "C1-C6 haloalkyl" refers to a C1-C4 alkyl group substituted by one halogen. Examples of C1-C6 haloalkyl groups include, but are not limited to, fluoromethyl, fluoroethyl, fluoropropyl, bromomethyl, bromoethyl, bromopropyl, chloromethyl, chloroethyl, chloropropyl, and the like.

[0138] The term "C1-C6 hydroxyalkyl" refers to a C1-C6 alkyl group substituted by one or more hydroxyl groups, wherein the C1-C6 alkyl group is a C1-C6 straight chain alkyl group or a C3-C6 branched chain alkyl group, wherein the C1-C6 straight chain alkyl group or the C3-C6 branched chain alkyl group has the definition as described in the present invention. In some embodiments, the term "C1-C6 hydroxyalkyl" refers to a C1-C6 alkyl group substituted by one hydroxyl group; in other embodiments, the term "C1-C6 hydroxyalkyl" refers to a C1-C4 alkyl group substituted by one hydroxyl group. Examples of C1-C6 hydroxyalkyl groups include, but are not limited to, hydroxymethyl, hydroxyethyl (1-hydroxyethyl or 2-hydroxyethyl), and the like.

[0139] The term "C1-C6 alkylamino" means a C1-C6 alkyl group connected to other groups of the molecule via an amine group, wherein the C1-C6 alkyl group has the definition as described in the present invention. Examples of C1-C6 alkylamino groups include, but are not limited to, methylamino, dimethylamino, trimethylamino, ethylamino, diethylamino, triethylamino, and the like.

[0140] The term "C6-C 20 "Aryl" means a monovalent aromatic monocyclic, bicyclic or tricyclic hydrocarbon ring having 6 to 20 carbon atoms, preferably "C6-C 14 The term "C 6- C 14 "Aryl" means a monovalent aromatic monocyclic, bicyclic or tricyclic hydrocarbon ring having 6, 7, 8, 9, 10, 11, 12, 13 or 14 carbon atoms ("C6-C 14 aryl), particularly a ring having 6 carbon atoms ("C6 aryl"), such as phenyl, or a ring having 10 carbon atoms ("C 10 aryl), such as naphthyl, or a ring having 14 carbon atoms ("C 14 "aryl"), for example anthracenyl.

[0141] The term "5-18 membered heteroaryl" denotes a monovalent monocyclic, bicyclic or tricyclic aromatic ring system having 5-18 ring atoms and containing 1-5 heteroatoms independently selected from N, O and S, and in each case may be benzo-fused, preferably "5-12 membered heteroaryl", i.e. having 5-12 ring atoms and containing 1-5 heteroatoms independently selected from N, O and S. In particular, the 5-18 membered heteroaryl is selected from thienyl, furanyl, pyrrolyl, oxazolyl, thiazolyl, imidazolyl, pyrazolyl, isoxazolyl, isothiazolyl, oxadiazolyl, triazolyl, thiadiazolyl, thia-4H-pyrazolyl and the like and benzo derivatives thereof, for example benzofuranyl, benzothienyl, benzoxazolyl, benzisoxazolyl, benzimidazolyl, benzotriazolyl, indazolyl, indolyl, , isoindolyl, etc.; or pyridyl, pyridazinyl, pyrimidinyl, pyrazinyl, triazinyl, etc., and benzo derivatives thereof, such as quinolyl, quinazolinyl, isoquinolyl, etc.; or azinyl, indolizinyl, purinyl, etc., and benzo derivatives thereof; or cinnolinyl, phthalazinyl, quinazolinyl, quinoxalinyl, naphthyridinyl, pteridinyl, carbazolyl, acridinyl, phenazinyl, phenothiazinyl, phenoxazinyl, etc. In some embodiments, the 5-18 membered heteroaryl is selected from 3-pyrazolyl, 4-pyrazolyl, 5-pyrazolyl, 2-imidazolyl, 4-imidazolyl, 5-imidazolyl, 2-pyridyl, 3-pyridyl, 4-pyridyl, 5-pyridyl, 6-pyridyl, 3-pyridazinyl, 4-pyridazinyl, 5-pyridazinyl, 6-pyridazinyl, 2-pyrimidinyl, 5-pyrimidinyl, 6-pyrimidinyl, 2-pyrazinyl and 2-triazinyl.

[0142] The scheme of the present invention will be explained below in conjunction with the embodiments. It will be appreciated by those skilled in the art that the following embodiments are only used to illustrate the present invention and should not be considered as limiting the scope of the present invention. Where specific techniques or conditions are not indicated in the embodiments, the techniques or conditions described in the literature in this area or the product specifications are used. The reagents or instruments used are not indicated by the manufacturer and are all conventional products that can be obtained commercially.

[0143] Example 1: Preparation of perovskite crystalline silicon tandem cell

[0144] (1) The textured silicon substrate battery was cleaned with a N2 gun and then treated with UV ozone for 15 minutes before use. The structure of the silicon substrate battery from bottom to top: Ag, ITO, ɑ-Si(P), ɑ-Si(i), ɑ-Si:H(i), c-Si, ɑ-Si:H(i), ɑ-Si:H(n), nc-Si:H(n+), nc-Si:H(p+).

[0145] (2) MeO-2PACz and TFPPO were mixed evenly in ethanol to obtain a mixed solution, wherein the concentration of MeO-2PACz was 0.5 mmol / ml, the concentration of the additive TFPPO was 0.5 mg / ml, and the molar ratio of MeO-2PACz to TFPPO was 1:0.003; the mixed solution was applied on the surface of the bottom battery by spin coating, and the spin coating conditions were 4000r, 30s; then annealed at 100°C for 5min to obtain a hole transport layer (i.e., SAMs layer) with a thickness of 8nm.

[0146] (3) The skeleton layer was prepared by co-evaporation method, and the evaporation rate of PbI2 was The evaporation rate of CsBr is The total evaporated thickness is 320 nm.

[0147] (4) The structure obtained in step 3 is placed in a glove box for annealing at 150° C. for 5 min.

[0148] (5) The structure after annealing in step 4 is placed in a vacuum evaporation chamber, and the organic salt FAI is deposited on the skeleton layer by evaporation. The evaporation rate of FAI is The deposition thickness is 250 nm.

[0149] (6) Annealing the structure obtained in step 5 at 130° C. for 5 min in a N 2 atmosphere, and then transferring to air with a humidity of 40% and annealing at 150° C. for 20 min to obtain a perovskite layer.

[0150] (7) Phenethylammonium iodide (PEAI) was deposited on the surface of the perovskite layer by evaporation method as a surface passivation layer, and the evaporation rate was The evaporation thickness is 5 nm.

[0151] (8) Using evaporation method, 20nm thick C was deposited on the surface of the passivation layer. 60 As electron transport layer.

[0152] (9) Atomic layer deposition (ALD) was used to deposit a 15 nm thick SnO2 buffer layer on the surface of the electron transport layer.

[0153] (10) A 50 nm thick IZO layer was deposited on the surface of the buffer layer by magnetron sputtering as a transparent electrode.

[0154] (11) Ag metal electrode layers with a thickness of 200 nm were prepared on the upper and lower surfaces of the device obtained in step 10 by thermal evaporation, thereby completing the preparation of the perovskite crystalline silicon stacked cell.

[0155] Example 2

[0156] A perovskite crystalline silicon tandem cell was prepared according to the method described in Example 1, except that DFPPO was used instead of TFPPO.

[0157] Example 3

[0158] A perovskite crystalline silicon tandem cell was prepared according to the method described in Example 1, except that TPO was used instead of TFPPO.

[0159] Example 4

[0160] A perovskite crystalline silicon tandem cell was prepared according to the method described in Example 1, except that tris(4-bromophenyl)phosphine oxide (CAS No.: 900-99-2) was used instead of TFPPO.

[0161] Example 5

[0162] A perovskite crystalline silicon tandem cell was prepared according to the method described in Example 2, except that bis(4-bromophenyl)phenylphosphine oxide (CAS No.: 93869-52-4) was used instead of DFPPO.

[0163] Example 6

[0164] A perovskite crystalline silicon tandem cell was prepared according to the method described in Example 1, except that tri(4-chlorophenyl)phosphine oxide (CAS No.: 4576-56-1) was used instead of TFPPO.

[0165] Example 7

[0166] The perovskite crystalline silicon tandem cell was prepared according to the method described in Example 1, except that tri(4-methylphenyl)phosphine oxide (CAS No.: 797-70-6) was used instead of TFPPO.

[0167] Example 8

[0168] A perovskite crystalline silicon tandem cell was prepared according to the method described in Example 1, except that tris(4-dimethylaminophenyl)phosphine oxide (CAS No.: 807-20-5) was used instead of TFPPO.

[0169] Example 9

[0170] A perovskite crystalline silicon tandem cell was prepared according to the method described in Example 1, except that tris(4-hydroxyphenyl)phosphine oxide (CAS No.: 797-71-7) was used instead of TFPPO.

[0171] Example 10

[0172] A perovskite crystalline silicon tandem cell was prepared according to the method described in Example 1, except that tri(4-methoxyphenyl)phosphine oxide (CAS No.: 803-17-8) was used instead of TFPPO.

[0173] Embodiment 11

[0174] A perovskite crystalline silicon tandem cell was prepared according to the method described in Example 1, except that the molar ratio of MeO-2PACz to TFPPO was 1:0.002.

[0175] Example 12

[0176] A perovskite crystalline silicon tandem cell was prepared according to the method described in Example 1, except that the molar ratio of MeO-2PACz to TFPPO was 1:0.01.

[0177] Example 13

[0178] A perovskite crystalline silicon tandem cell was prepared according to the method described in Example 1, except that the molar ratio of MeO-2PACz to TFPPO was 1:0.001.

[0179] Embodiment 14

[0180] A perovskite crystalline silicon tandem cell was prepared according to the method described in Example 1, except that the molar ratio of MeO-2PACz to TFPPO was 1:0.012.

[0181] Embodiment 15

[0182] A perovskite crystalline silicon tandem cell was prepared according to the method described in Example 1, except that Me-4PACz was used instead of MeO-2PACz.

[0183] Example 16

[0184] A perovskite crystalline silicon tandem cell was prepared according to the method described in Example 1, except that 2PACz was used instead of MeO-2PACz.

[0185] Embodiment 17

[0186] A perovskite crystalline silicon stacked cell was prepared according to the method described in Example 1, except that the thickness of the hole transport layer was 8 nm.

[0187] Embodiment 18

[0188] The perovskite crystalline silicon tandem cell was prepared according to the method described in Example 1, except that the annealing temperature in step 2 was 80°C.

[0189] Embodiment 19

[0190] The perovskite crystalline silicon tandem cell was prepared according to the method described in Example 1, except that the annealing temperature in step 2 was 120°C.

[0191] Comparative Example 1

[0192] The perovskite crystalline silicon tandem cell was prepared according to the method described in Example 1, except that the additive TFPPO was not used in step 2.

[0193] Comparative Example 2

[0194] A perovskite crystalline silicon tandem cell was prepared according to the method described in Example 1, except that 1-butylphosphoric acid (CAS No.: 3321-64-0) was used instead of TFPPO.

[0195] Comparative Example 3

[0196] A perovskite crystalline silicon tandem cell was prepared according to the method described in Example 1, except that tributylphosphine oxide (CAS No.: 814-29-9) was used instead of TFPPO.

[0197] Comparative Example 4

[0198] A perovskite crystalline silicon tandem cell was prepared according to the method described in Example 1, except that dibutylphenylphosphine oxide (CAS No.: 10557-66-1) was used instead of TFPPO.

[0199] Comparative Example 5

[0200] A perovskite crystalline silicon tandem cell was prepared according to the method described in Example 1, except that butyldiphenylphosphine oxide (CAS No.: 4233-13-0) was used instead of TFPPO.

[0201] Battery performance test

[0202] The open circuit voltage (Voc), short circuit current density (Jsc), fill factor (FF), and photoelectric conversion efficiency (PCE) of the batteries of the above embodiments and comparative examples are tested as follows: the prepared battery device is placed under a light source with an intensity P of 100 mW / cm 2The AM1.5G standard simulates sunlight by changing the bias voltage of the load on the battery device to obtain the current value of the battery device, thereby drawing the current density (J)-voltage (V) curve of the battery device, and thereby obtaining the open circuit voltage Voc, short circuit current density Jsc, fill factor FF, and photoelectric conversion efficiency of the battery device, that is, battery efficiency PCE; V and J of the battery device change with the change of the external load. When the external load is short-circuited, V=0, and J at this time is called the short-circuit current density Jsc; when the external load is disconnected, J=0, and V at this time is called the open circuit voltage Voc; the output power of the battery device has a maximum value, which is called the maximum power point P max , P max Divide by the effective light receiving area of ​​the battery device, that is, the battery efficiency PCE; the fill factor of the battery device FF = PCE×P / (Jsc×Voc). The test results are shown in Table 1 below.

[0203] Table 1

[0204]

[0205]

[0206] Results and Discussion:

[0207] By comparing Examples 1-19 with Comparative Example 1, it can be seen that the SAMs layer optimized by introducing additives such as TFPPO can better anchor the perovskite layer, the stability of the SAMs layer is improved, and the problem of more residue at the bottom of the perovskite crystalline silicon stacked battery is reduced, thereby improving the open circuit voltage (Voc) and fill factor (FF) of the device.

[0208] By comparing Example 1 with Comparative Example 2, it can be seen that the additive of the present invention has three benzene rings and a P=O group, and has obvious advantages in improving battery performance compared with additives of other structures.

[0209] By comparing Example 1 with Comparative Examples 3-5, it can be seen that the additive of the present invention has three benzene rings and has obvious advantages in improving battery performance compared with additives of other structures.

[0210] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "example", "specific example", or "some examples" etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art may combine and combine the different embodiments or examples described in this specification and the features of the different embodiments or examples, unless they are contradictory.

[0211] Although the embodiments of the present invention have been shown and described above, it is to be understood that the above embodiments are exemplary and are not to be construed as limitations of the present invention. A person skilled in the art may change, modify, replace and vary the above embodiments within the scope of the present invention.

Claims

1. A hole transport composition, characterized in that It comprises a self-assembled monolayer material and an additive, wherein the additive has a structure shown in Formula I: in, R1, R2, R3, R4, R5, R6, R7, R8, R9, R 10 , R 11 , R 12 , R 13 , R 14 , R 15 Each is independently selected from hydrogen, halogen, hydroxyl, amino, carboxyl, nitro, C2-C6 alkenyl, C1-C6 alkoxycarbonyl, C1-C6 haloalkyl, C1-C6 hydroxyalkyl, C1-C6 alkylamino, C1-C6 alkyl, C1-C6 alkoxy, C6-C 20 Any of aryl and 5-18 membered heteroaryl.

2. The hole transport composition according to claim 1, characterized in that The additive satisfies at least one of the following conditions: (1) At least one of R1, R2, R3, R4 and R5 is independently selected from halogen, hydroxyl, amino, carboxyl, nitro, C2-C6 alkenyl, C1-C6 alkoxycarbonyl, C1-C6 haloalkyl, C1-C6 hydroxyalkyl, C1-C6 alkylamino, C1-C6 alkyl, C1-C6 alkoxy, C6-C 20 Any one of aryl and 5-18 membered heteroaryl; (2) R6, R7, R8, R9 and R 10 At least one of them is independently selected from halogen, hydroxyl, amino, carboxyl, nitro, C2-C6 alkenyl, C1-C6 alkoxycarbonyl, C1-C6 haloalkyl, C1-C6 hydroxyalkyl, C1-C6 alkylamino, C1-C6 alkyl, C1-C6 alkoxy, C6-C 20 Any one of aryl and 5-18 membered heteroaryl; (3)R 11 , R 12 , R 13 , R 14 and R 15 At least one of them is independently selected from halogen, hydroxyl, amino, carboxyl, nitro, C2-C6 alkenyl, C1-C6 alkoxycarbonyl, C1-C6 haloalkyl, C1-C6 hydroxyalkyl, C1-C6 alkylamino, C1-C6 alkyl, C1-C6 alkoxy, C6-C 20 Any of aryl and 5-18 membered heteroaryl.

3. The hole transport composition according to claim 2, characterized in that The additive satisfies at least one of the following conditions: (1) at least one of R1, R2, R3, R4 and R5 is independently selected from halogen; (2) R6, R7, R8, R9 and R 10 At least one of them is independently selected from halogen; (3)R 11 , R 12 , R 13 , R 14 and R 15 At least one of them is independently selected from halogen.

4. The hole transport composition according to claim 3, characterized in that The additive satisfies at least one of the following conditions: (1) at least one of R1, R2, R3, R4 and R5 is independently selected from F; (2) R6, R7, R8, R9 and R 10 At least one of them is independently selected from F; (3)R 11 , R 12 , R 13 , R 14 and R 15 At least one of them is independently selected from F.

5. The hole transport composition according to claim 1, characterized in that The additive includes one or more of the following structures:

6. The hole transport composition according to claim 1 or 2, characterized in that The molar ratio of the self-assembled monolayer material to the additive is 1:(0.002-0.01).

7. The hole transport composition according to claim 1 or 2, characterized in that: The self-assembled monolayer material includes one or more of [4-(3,6-dimethyl-9H-carbazole-9-yl)butyl]phosphonic acid, [2-(9H-carbazole-9-yl)ethyl]phosphonic acid, [2-(3,6-dimethoxy-9H-carbazole-9-yl)ethyl]phosphonic acid, [4-(7H-dibenzocarbazole-7-yl)butyl]phosphonic acid, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], and 4,4'-cyclohexylbis[N,N-di(4-methylphenyl)aniline].

8. A hole transport layer, characterized in that: The invention comprises the hole transport composition according to any one of claims 1 to 7.

9. The hole transport layer according to claim 8, characterized in that The thickness of the hole transport layer is 1 nm-10 nm.

10. A method for preparing the hole transport layer according to claim 8 or 9, characterized in that: The following steps are involved: mixing a self-assembled monolayer material, an additive and a solvent to obtain a mixed solution; The mixed solution is coated on a substrate and annealed.

11. The method according to claim 10, characterized in that The annealing temperature is 90°C-110°C, and the annealing time is 2min-10min.

12. A perovskite battery, characterized in that: The hole transport layer comprises the hole transport layer according to claim 8 or 9 or the hole transport layer obtained by the method according to claim 10 or 11.

13. The perovskite battery according to claim 12, characterized in that: The perovskite cell includes one of a perovskite crystalline silicon stacked cell, a single-junction perovskite cell, and a multi-junction perovskite cell.

14. A photovoltaic module, characterized in that: Including the perovskite battery as described in claim 12 or 13.

15. An electrical equipment, characterized in that: Including the perovskite battery as described in claim 12 or 13.

Images