Temperature sensor detection circuit and semiconductor temperature control equipment

Abstract

The invention relates to the technical field of temperature sensing, and provides a temperature sensor detection circuit and semiconductor temperature control equipment, and the circuit comprises a constant current source module which is used for providing constant current; the thermosensitive module is connected with the constant current source module, and the thermosensitive module is used for obtaining the constant current to form temperature detection voltage corresponding to the temperature; the input end of the multi-stage differential module is connected with the thermosensitive module, the output end of the multi-stage differential module is used for being connected with the analog-to-digital conversion module, and the multi-stage differential module is used for carrying out at least two-stage differential processing on the temperature detection voltage to form a detection output signal. The thermosensitive module outputs temperature detection voltage corresponding to the temperature under the action of constant current, the multi-stage differential module obtains the temperature detection voltage for differential processing, the influence of common-mode interference is reduced, the multi-stage differential module carries out at least two-stage differential processing, the common-mode interference is further removed, and an output detection output signal has the advantage of high precision. And the requirement of semiconductor production on temperature detection is met.

Description

Technical Field

[0001] The present invention relates to the field of temperature sensing technology, and in particular to a temperature sensor detection circuit and a semiconductor temperature control device. Background Art

[0002] In the semiconductor production process, temperature control is one of the key links that affect product quality and production efficiency. Since the semiconductor production process is sensitive to temperature changes, accurate temperature control helps improve semiconductor performance and production yield. The core of temperature control lies in accurate temperature detection, especially in the semiconductor production process, where the accuracy requirements for temperature detection are more stringent.

[0003] However, in the prior art, the temperature sensor detection circuit used in semiconductor temperature control equipment is easily affected by circuit interference in actual applications, resulting in increased signal noise and measurement fluctuations, thereby limiting the improvement of detection accuracy. The impact of circuit interference on temperature sensor detection is particularly prominent in semiconductor manufacturing processes that require high precision and high stability.

[0004] Therefore, how to improve the anti-interference ability of temperature detection to meet the demand for precise temperature detection in semiconductor production is an urgent problem to be solved. Summary of the invention

[0005] The present invention provides a temperature sensor detection circuit and a semiconductor temperature control device, which are used to solve the defect in the prior art that temperature detection is affected by circuit interference, resulting in reduced temperature detection accuracy.

[0006] The present invention provides a temperature sensor detection circuit, comprising: Constant current source module, used to provide constant current; A thermistor module is connected to the constant current source module, and the thermistor module is used to obtain a constant current to form a temperature detection voltage corresponding to the temperature; A multi-level differential module, the input end of the multi-level differential module is connected to the thermistor module, the output end of the multi-level differential module is used to connect to the analog-to-digital conversion module, and the multi-level differential module is used to perform at least two-level differential processing on the temperature detection voltage to form a detection output signal.

[0007] According to a temperature sensor detection circuit provided by the present invention, the thermistor module includes a thermistor, a first bias resistor and a second bias resistor, the thermistor, the first bias resistor and the second bias resistor are sequentially connected in series to form a series circuit, one end of the series circuit is connected to the constant current source module, the other end of the series circuit is grounded, the multi-stage differential module is connected to the series circuit, and a temperature detection voltage is formed at both ends of the thermistor.

[0008] According to a temperature sensor detection circuit provided by the present invention, the multi-stage differential module obtains the voltage across the thermistor and the voltage across the first bias resistor for two-stage differential processing, the resistance value of the first bias resistor is determined according to the lower limit of the resistance value variation range of the thermistor, so that the voltage across the thermistor is greater than the voltage across the first bias resistor, and the second bias resistor is determined according to the resistance value of the thermistor, the resistance value of the first bias resistor, the constant current of the constant current source and the power supply voltage, so that the potential of the thermistor and the potential of the first bias resistor are within a preset range of half the power supply voltage.

[0009] A temperature sensor detection circuit provided according to the present invention further includes a low-pass filtering module, and the low-pass filtering module is connected to the output end of the multi-stage differential module.

[0010] According to a temperature sensor detection circuit provided by the present invention, the multi-stage differential module includes a first differential amplifier unit, a second differential amplifier unit and a third differential amplifier unit, the first input end of the first differential amplifier unit is connected to one end of the thermistor, the second input end of the first differential amplifier unit is connected to the other end of the thermistor, the first input end of the second differential amplifier unit is connected to one end of the first bias resistor, the other end of the second differential amplifier unit is connected to the other end of the first bias resistor, the output end of the first differential amplifier unit is connected to the first input end of the third differential amplifier unit, the output end of the second differential amplifier unit is connected to the second input end of the third differential amplifier unit, and the output end of the third differential amplifier unit is used to connect to an analog-to-digital conversion module.

[0011] According to a temperature sensor detection circuit provided by the present invention, the first differential amplification unit, the second differential amplification unit and the third differential amplification unit all include an instrument amplifier, a common-mode inductor, a first input resistor, a second input resistor and a multiple configuration resistor, the first input end of the common-mode inductor serves as the first input end of the differential amplification unit, the second input end of the common-mode inductor serves as the second input end of the differential amplification unit, the first output end of the common-mode inductor is connected to the non-inverting input end of the instrument amplifier through the first input resistor, the second output end of the common-mode inductor is connected to the inverting input end of the instrument amplifier through the second input resistor, the multiple configuration resistor is connected to the amplification multiple configuration end of the instrument amplifier, and the output end of the instrument amplifier serves as the output end of the differential amplification unit.

[0012] According to a temperature sensor detection circuit provided by the present invention, the first differential amplification unit, the second differential amplification unit and the third differential amplification unit all further include a first filter capacitor, a second filter capacitor and a third filter capacitor, one end of the first filter capacitor is respectively connected to one end of the second filter capacitor, the first input resistor and the non-inverting input end of the instrument amplifier, the other end of the first filter capacitor is grounded, one end of the third filter capacitor is respectively connected to the other end of the second filter capacitor, the second input resistor and the inverting input end of the instrument amplifier, and the other end of the third filter capacitor is grounded.

[0013] According to a temperature sensor detection circuit provided by the present invention, the constant current source module includes a voltage reference source, an operational amplifier, a transistor, a first resistor, a second resistor, a third resistor and a first capacitor, one end of the voltage reference source and the first resistor are both connected to a power supply end, the other end of the first resistor is respectively connected to a first input end of the operational amplifier and an input end of the transistor, the output end of the voltage reference source is respectively connected to one end of the second resistor, one end of the first capacitor and a second input end of the operational amplifier, the other end of the second resistor and the other end of the first capacitor are grounded, the output end of the operational amplifier is connected to one end of the third resistor, the other end of the third resistor is connected to the controlled end of the transistor, and the output end of the transistor is connected to the thermistor module.

[0014] According to a temperature sensor detection circuit provided by the present invention, the low-pass filter module includes a low-pass filter resistor and a low-pass filter capacitor, one end of the low-pass filter resistor is connected to the output end of the multi-stage differential module, the other end of the low-pass filter resistor is connected to one end of the low-pass filter capacitor, the other end of the low-pass filter capacitor is grounded, and the other end of the low-pass filter resistor is used to connect to the analog-to-digital conversion module.

[0015] The present invention also provides a semiconductor temperature control device, comprising the above-mentioned temperature sensor detection circuit, and also comprising an analog-to-digital conversion module, and the output end of the multi-stage differential module is connected to the analog-to-digital conversion module.

[0016] A temperature sensor detection circuit and a semiconductor temperature control device provided by the present invention have at least beneficial effects: a constant current source module provides a stable constant current, a thermistor module outputs a temperature detection voltage corresponding to the temperature under the action of the constant current, a multi-stage differential module obtains the temperature detection voltage for differential processing, which can effectively reduce the influence of common-mode interference, and the multi-stage differential module performs at least two stages of differential processing, which can further remove common-mode interference, so that the detection output signal output by the multi-stage differential module has the advantage of high precision, which is conducive to meeting the temperature detection requirements of semiconductor production. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] In order to more clearly illustrate the technical solutions in the present invention or the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0018] Figure 1 It is a structural schematic diagram of a temperature sensor detection circuit provided by the present invention.

[0019] Figure 2 The present invention provides a circuit diagram of a temperature sensor detection circuit according to one embodiment of the present invention.

[0020] Figure 3 It is a temperature sensor detection circuit that uses a resistance bridge to detect temperature.

[0021] Reference numerals: 100: constant current source module; 200: thermistor module; 300: multi-stage differential module; 310: first differential amplifier unit; 320: second differential amplifier unit; 330: third differential amplifier unit; 400: low-pass filter module. DETAILED DESCRIPTION

[0022] In order to make the purpose, technical solution and advantages of the present invention clearer, the technical solution of the present invention will be clearly and completely described below in conjunction with the drawings of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0023] Semiconductor-specific temperature control equipment is used in multiple semiconductor manufacturing links, including etching, ion implantation, diffusion, thin film deposition, chemical mechanical polishing, etc. In these processes, Chiller (temperature control equipment) ensures the performance of semiconductor devices in production, testing, aging and other links by precisely controlling the temperature. For example, during the etching process, Chiller removes the heat generated by the equipment through a single-channel cooling water to ensure that the equipment operates in a constant temperature environment. Therefore, temperature control plays an important role in the manufacturing process of semiconductor wafers. In the temperature control process of Chiller, the temperature detection circuit is important. Only when the detection accuracy is high enough and the noise is low enough can accurate control be achieved. Usually, the detection accuracy is one order of magnitude higher than the control accuracy. For high-precision chillers, it can be considered that the accuracy of the temperature detection circuit determines the temperature control accuracy of the entire machine.

[0024] like Figure 3 As shown, in the related art, the temperature sensor detection circuit uses a resistor bridge to convert the resistance change of the temperature sensor into a voltage signal for detection, and uses an operational amplifier to amplify it and send it to the analog-to-digital conversion sampling circuit to obtain the temperature value after analog-to-digital conversion. Because the resistor bridge cannot completely achieve impedance matching when the temperature changes, and the resistor bridge detection relies on a high-precision and low-temperature drift, low-ripple coefficient voltage source, the effective input range of the post-stage differential operational amplifier is limited, and a large range of high-precision signal amplification cannot be performed. At the same time, it is easily affected by interference in the circuit, resulting in the sampling voltage output to the analog-to-digital conversion module. Generally, the accuracy is low and the noise is relatively large. This seriously affects the control accuracy of the system.

[0025] In order to solve the problem that the temperature detection is affected by the circuit interference, resulting in the decrease of temperature detection accuracy, the following is combined with Figure 1 and Figure 2 A temperature sensor detection circuit of the present invention is described, comprising: The constant current source module 100 is used to provide a constant current; Thermistor module 200 is connected to the constant current source module 100, and thermistor module 200 is used to obtain a constant current to form a temperature detection voltage corresponding to the temperature; A multi-level differential module 300, the input end of the multi-level differential module 300 is connected to the thermistor module 200, the output end of the multi-level differential module 300 is used to connect to the analog-to-digital conversion module, and the multi-level differential module 300 is used to perform at least two-level differential processing on the temperature detection voltage to form a detection output signal.

[0026] The constant current source module 100 provides a stable constant current, and the thermistor module 200 outputs a temperature detection voltage corresponding to the temperature under the action of the constant current. The multi-stage differential module 300 obtains the temperature detection voltage for differential processing, which can effectively reduce the influence of common-mode interference. In addition, the multi-stage differential module 300 performs at least two stages of differential processing, which can further remove common-mode interference, so that the detection output signal output by the multi-stage differential module 300 has the advantage of high precision, which is conducive to meeting the temperature detection requirements of semiconductor production.

[0027] The impact of interference in a circuit is usually the same at various locations in the circuit. Therefore, it can be considered that voltage fluctuations caused by interference in the circuit are mainly common-mode interference, which can be effectively suppressed through differential processing. The multi-stage differential module 300 further reduces the noise caused by common-mode interference through at least two stages of differential processing, which helps to reduce the impact of noise on temperature detection and improve the accuracy of temperature detection.

[0028] refer to Figure 1 and Figure 2In some embodiments of a temperature sensor detection circuit of the present invention, the thermistor module 200 includes a thermistor RT, a first bias resistor R1 and a second bias resistor R2, the thermistor RT, the first bias resistor R1 and the second bias resistor R2 are sequentially connected in series to form a series circuit, one end of the series circuit is connected to the constant current source module 100, the other end of the series circuit is grounded, the multi-stage differential module 300 is connected to the series circuit, and a temperature detection voltage is formed at both ends of the thermistor RT.

[0029] The thermistor RT, the first bias resistor R1, and the second bias resistor R2 are connected in series in sequence to form a series circuit, and the series circuit is connected to the constant current source module 100 to obtain a constant current. Under the action of the constant current, the thermistor RT, the first bias resistor R1, and the second bias resistor R2 in the series circuit all form a corresponding voltage, wherein the thermistor RT changes with temperature, so that the voltage formed corresponds to the temperature, that is, the voltage at both ends of the thermistor RT forms a temperature detection voltage. The multi-stage differential module 300 is connected to the series circuit to obtain the temperature detection voltage, and the multi-stage differential module 300 can simultaneously obtain the voltages of the first bias resistor R1 and the second bias resistor R2 for differential processing. The first bias resistor R1 and the second bias resistor R2 can adjust the temperature detection voltage range of the thermistor RT by setting appropriate resistance values, and improve the working range of the differential processing, which is conducive to improving the detection range of temperature detection.

[0030] The constant current source module 100 is used to provide a constant current, which is conducive to making the voltage formed by the thermistor RT, the first bias resistor R1, and the second bias resistor R2 more stable. When the constant current source module 100 is disturbed and the constant current fluctuates, the constant current has the same effect on each resistor, that is, the voltage fluctuation caused by the interference of the thermistor RT, the first bias resistor R1, and the second bias resistor R2 in series belongs to common mode interference. Differential processing is performed by the multi-stage differential module 300 to reduce the impact of common mode interference.

[0031] It is understandable that the multi-stage differential module 300 has a high input impedance, and it can be considered that almost all of the constant current output by the constant current source flows to the ground through the series circuit formed by the thermistor RT, the first bias resistor R1 and the second bias resistor R2.

[0032] refer to Figure 1 and Figure 2In some embodiments of a temperature sensor detection circuit of the present invention, the multi-stage differential module 300 obtains the voltage across the thermistor RT and the voltage across the first bias resistor R1 for two-stage differential processing, the resistance value of the first bias resistor R1 is determined according to the lower limit of the resistance value variation range of the thermistor RT, so that the voltage across the thermistor RT is greater than the voltage across the first bias resistor R1, and the second bias resistor R2 is determined according to the resistance value of the thermistor RT, the resistance value of the first bias resistor R1, the constant current of the constant current source and the power supply voltage, so that the potential of the thermistor RT and the potential of the first bias resistor R1 are within a preset range of half the power supply voltage.

[0033] Based on the connection structure of thermistor RT, the first bias resistor R1, and the second bias resistor R2, the multi-stage differential module 300 obtains the voltage across the thermistor RT, i.e., the temperature detection voltage, and the voltage across the first bias resistor R1 to perform two-stage differential processing. By configuring the resistance of the first bias resistor R1 to be less than the lower limit of the resistance range of the thermistor RT, since the resistance and voltage are in a linear relationship and the constant current is the same, the voltage of the first bias resistor R1 is less than the lower limit of the voltage variation range of the thermistor RT. When performing differential processing, the voltage of the thermistor RT is subtracted from the voltage across the first bias resistor R1 to ensure that the differential result is greater than or equal to zero. In this way, since the differential result is stably greater than or equal to zero, the multi-stage differential module 300 can be powered by a single power supply, thereby simplifying the power supply structure of the multi-stage differential module 300.

[0034] When the constant current generated by the constant current source module 100 flows through the second bias resistor R2, a corresponding voltage is formed based on the resistance value of the second bias resistor R2, raising the lower end potential of the thermistor RT and the first bias resistor R1. Since the multi-stage differential module 300 performs differential processing, it will first perform differential processing and then amplify, and the voltage output range of the multi-stage differential module 300 after amplification is related to the voltage of the power supply voltage, usually when the voltage of the input signal is near half of the power supply voltage, it has a larger amplification range, avoiding the voltage being too large or too small to reach the upper and lower limits of the output range after differential amplification processing, resulting in distortion, and the differential amplification has good linearity at the midpoint of the output range, therefore, controlling the input voltage to be near half of the power supply voltage of the multi-stage differential module 300 can improve the effective working range of the multi-stage differential module 300. Accordingly, according to the size of the power supply voltage, with half of the power supply voltage as the target, based on the size of the constant current output by the constant current source module 100, the resistance of the thermistor RT and the resistance of the first bias resistor R1, the resistance of the second bias resistor R2 is determined, so that after the voltage of the second bias resistor R2 raises the potential of the thermistor RT and the potential of the first bias resistor R1, the potential of the thermistor RT and the potential of the first bias resistor R1 are within a preset range of half the power supply voltage, that is, located near the midpoint of the power supply voltage, so as to improve the effective working range of the multi-stage differential module 300.

[0035] refer to Figure 1 and Figure 2 In some embodiments of the temperature sensor detection circuit of the present invention, a low-pass filter module 400 is further included, and the low-pass filter module 400 is connected to the output end of the multi-stage differential module 300.

[0036] By providing a low-pass filter module 400, the detection output signal of the multi-stage differential module 300 is low-pass filtered, which can filter out the fluctuations caused by differential mode interference, thereby reducing the impact of differential mode interference, which is beneficial to further improve the accuracy of the detection output signal and meet the temperature detection requirements of semiconductor production.

[0037] refer to Figure 1 and Figure 2In some embodiments of a temperature sensor detection circuit of the present invention, the multi-stage differential module 300 includes a first differential amplifier unit 310, a second differential amplifier unit 320 and a third differential amplifier unit 330, the first input end of the first differential amplifier unit 310 is connected to one end of the thermistor RT, the second input end of the first differential amplifier unit 310 is connected to the other end of the thermistor RT, the first input end of the second differential amplifier unit 320 is connected to one end of the first bias resistor R1, the other end of the second differential amplifier unit 320 is connected to the other end of the first bias resistor R1, the output end of the first differential amplifier unit 310 is connected to the first input end of the third differential amplifier unit 330, the output end of the second differential amplifier unit 320 is connected to the second input end of the third differential amplifier unit 330, and the output end of the third differential amplifier unit 330 is used to connect to the analog-to-digital conversion module.

[0038] The first differential amplifier unit 310 is connected to both ends of the thermistor RT to obtain the voltage across the thermistor RT, i.e., the temperature detection voltage. The second differential amplifier unit 320 is connected to both ends of the first bias resistor R1 to obtain the voltage across the first bias resistor R1. The first differential amplifier unit 310 and the second differential amplifier unit 320 perform primary differential processing to suppress the common-mode interference of the thermistor RT and the first bias resistor R1, and form the voltage of the thermistor RT and the voltage of the first bias resistor R1 as the differential processing result. The differential processing result is transmitted to the first input end and the second input end of the third differential unit respectively. The third differential unit performs secondary differential processing to subtract the voltage of the first bias resistor R1 from the voltage of the thermistor RT, and remove the unchanged base voltage to retain the voltage part corresponding to the temperature change, that is, pay more attention to the voltage change part corresponding to the temperature change, which is conducive to more easily perceiving the subtle changes in temperature and improving the accuracy of temperature detection. At the same time, the secondary differential processing further suppresses the influence of common-mode interference.

[0039] In this way, two-stage differential processing is achieved, and the voltage of the first bias resistor R1 is used as a base voltage that does not change with temperature. The temperature detection voltage of the thermistor RT is subtracted from the base voltage, and the voltage portion corresponding to the temperature change is retained, thereby improving the resolution of temperature detection. At the same time, the two-stage differential processing reduces the impact of interference and improves the accuracy of temperature detection.

[0040] In some embodiments of the present invention, the multi-stage differential module may further include a greater number of differential amplification units to perform three-stage or higher-level differential processing to further suppress the influence of common-mode interference. Considering the circuit complexity, implementation cost, and interference suppression performance, three differential amplification units are used to implement two-stage differential processing to balance the implementation difficulty and interference suppression performance.

[0041] refer to Figure 2 In some embodiments of a temperature sensor detection circuit of the present invention, the first differential amplifier unit 310, the second differential amplifier unit 320 and the third differential amplifier unit 330 all include an instrument amplifier, a common-mode inductor, a first input resistor, a second input resistor and a multiple configuration resistor, the first input end of the common-mode inductor serves as the first input end of the differential amplifier unit, the second input end of the common-mode inductor serves as the second input end of the differential amplifier unit, the first output end of the common-mode inductor is connected to the non-inverting input end of the instrument amplifier through the first input resistor, the second output end of the common-mode inductor is connected to the inverting input end of the instrument amplifier through the second input resistor, the multiple configuration resistor is connected to the amplification multiple configuration end of the instrument amplifier, and the output end of the instrument amplifier serves as the output end of the differential amplifier unit.

[0042] The first differential amplifier unit 310, the second differential amplifier unit 320 and the third differential amplifier unit 330 adopt the same structure, and all include an instrument amplifier, a common mode inductor, a first input resistor, a second input resistor and a multiple configuration resistor. In the first differential amplifier unit 310, the first input terminal and the second input terminal of the instrument amplifier obtain the potentials at both ends of the thermistor RT through the first input resistor and the second input resistor respectively, and then perform differential amplification to obtain the voltage of the thermistor RT; similarly, in the second differential amplifier unit 320, the instrument amplifier obtains the potentials at both ends of the first bias resistor R1 for differential amplification to obtain the voltage of the first bias resistor R1; then in the third differential amplifier unit 330, the instrument amplifier obtains the voltage of the thermistor RT and the voltage of the first bias resistor R1 for differential amplification to form a detection output signal.

[0043] In the above process, by providing a common-mode inductor, the common-mode component is first removed by the common-mode inductor before the voltage is input to the instrumentation amplifier for differential amplification, which can suppress common-mode interference and further reduce the impact of common-mode interference.

[0044] It can be understood that the device parameters of the first differential amplifier unit 310, the second differential amplifier unit 320 and the third differential amplifier unit 330 can be the same or different. For example, the resistance value of the multiple configuration resistor of the first differential amplifier unit 310 is the same as that of the second differential amplifier unit 320, but different from that of the multiple configuration resistor of the third differential amplifier unit 330, so as to configure appropriate amplification factors respectively.

[0045] refer to Figure 2In some embodiments of a temperature sensor detection circuit of the present invention, the first differential amplifier unit 310, the second differential amplifier unit 320 and the third differential amplifier unit 330 all further include a first filter capacitor, a second filter capacitor and a third filter capacitor, one end of the first filter capacitor is respectively connected to one end of the second filter capacitor, the first input resistor and the non-inverting input terminal of the instrument amplifier, the other end of the first filter capacitor is grounded, one end of the third filter capacitor is respectively connected to the other end of the second filter capacitor, the second input resistor and the inverting input terminal of the instrument amplifier, and the other end of the third filter capacitor is grounded.

[0046] The first differential amplifier unit 310, the second differential amplifier unit 320 and the third amplifier unit all include a first filter capacitor, a second filter capacitor and a third filter capacitor. In the differential processing process, the common mode inductor and the instrument amplifier can suppress and remove the common mode interference. For differential mode interference, the first filter capacitor, the second filter capacitor and the third filter capacitor form a pre-differential mode suppression circuit, which can filter out the differential mode interference in the voltage input to the first input terminal and the second input terminal of the instrument amplifier, which is conducive to further reducing the influence of interference. In this way, both common mode interference and differential mode interference are suppressed, reducing the influence of interference on temperature detection, which is conducive to improving the accuracy of the detection output signal to meet the demand for temperature detection in semiconductor production.

[0047] refer to Figure 2 , the first differential amplifier unit 310 specifically includes a common mode inductor L1, a first input resistor R6, a second input resistor R7, a first filter capacitor C2, a second filter capacitor C3, a third filter capacitor C4, a multiple configuration resistor RG1, and an instrumentation amplifier U3. The second differential amplifier unit 320 specifically includes a common mode inductor L2, a first input resistor R8, a second input resistor R9, a first filter capacitor C5, a second filter capacitor C6, a third filter capacitor C7, a multiple configuration resistor RG2, and an instrumentation amplifier U4. The third differential amplifier unit 330 specifically includes a common mode inductor L3, a first input resistor R10, a second input resistor R11, a first filter capacitor C8, a second filter capacitor C9, a third filter capacitor C10, a multiple configuration resistor RG3, and an instrumentation amplifier U5.

[0048] refer to Figure 2In some embodiments of a temperature sensor detection circuit of the present invention, the constant current source module 100 includes a voltage reference source U1, an operational amplifier U2, a transistor Q1, a first resistor R3, a second resistor R4, a third resistor R5 and a first capacitor C1, one end of the voltage reference source U1 and the first resistor R3 are both connected to the power supply end, the other end of the first resistor R3 is respectively connected to the first input end of the operational amplifier U2 and the input end of the transistor Q1, the output end of the voltage reference source U1 is respectively connected to one end of the second resistor R4, one end of the first capacitor C1 and the second input end of the operational amplifier U2, the other end of the second resistor R4 and the other end of the first capacitor C1 are grounded, the output end of the operational amplifier U2 is connected to one end of the third resistor R5, the other end of the third resistor R5 is connected to the controlled end of the transistor Q1, and the output end of the transistor Q1 is connected to the thermistor module 200.

[0049] The power supply voltage is stepped down by the first resistor R3 to form a voltage input to the first input terminal of the operational amplifier U2. The voltage reference source U1 generates a reference voltage and transmits it to the second input terminal of the operational amplifier U2. The operational amplifier U2 generates an output voltage based on the voltage of the first input terminal and the voltage of the second input terminal. The output voltage forms a current and is transmitted to the controlled terminal of the transistor Q1 through the third resistor R5. Since the output terminal current of the transistor Q1 is controlled by the input current of the controlled terminal, when the current of the controlled terminal is stable, a stable current is formed at the output terminal as a constant current. In this way, the purpose of outputting a constant current is achieved. By adjusting the voltage output by the voltage reference source U1, the size of the constant current can be adjusted, so as to facilitate design adjustment.

[0050] In some embodiments, when the transistor is of PNP type, the input end is the emitter, the controlled end is the base, and the output end is the collector; in other embodiments, when the transistor Q1 is of NPN type, the input end is the collector, the controlled end is the base, and the output end is the emitter.

[0051] refer to Figure 2 In some embodiments of a temperature sensor detection circuit of the present invention, the low-pass filter module 400 includes a low-pass filter resistor R12 and a low-pass filter capacitor C11, one end of the low-pass filter resistor R12 is connected to the output end of the multi-stage differential module 300, the other end of the low-pass filter resistor R12 is connected to one end of the low-pass filter capacitor C11, the other end of the low-pass filter capacitor C11 is grounded, and the other end of the low-pass filter resistor R12 is used to connect to the analog-to-digital conversion module.

[0052] The low-pass filter module 400 includes a low-pass filter resistor R12 and a low-pass filter capacitor C11, which constitute a low-pass RC filter circuit. The high-frequency component caused by differential mode interference in the detection output signal is filtered out by the low-pass RC filter circuit, which can further reduce the influence of differential mode interference and is beneficial to improving the accuracy of the detection output signal.

[0053] A semiconductor temperature control device provided by the present invention is described below. The semiconductor temperature control device described below and the temperature sensor detection circuit described above can be referred to each other.

[0054] The present invention further provides a semiconductor temperature control device, comprising the above-mentioned temperature sensor detection circuit, and also comprising an analog-to-digital conversion module, and the output end of the multi-stage differential module 300 is connected to the analog-to-digital conversion module.

[0055] The constant current source module 100 provides a stable constant current, and the thermistor module 200 outputs a temperature detection voltage corresponding to the temperature under the action of the constant current. The multi-stage differential module 300 obtains the temperature detection voltage for differential processing, which can effectively reduce the influence of common-mode interference, and the multi-stage differential module 300 performs at least two-stage differential processing, which can further remove the common-mode interference, so that the detection output signal output by the multi-stage differential module 300 has the advantage of high precision. The detection output signal is converted into a corresponding temperature digital signal after the analog-to-digital conversion module performs analog-to-digital conversion processing, which is convenient for subsequent devices such as processors to process. In this way, it is conducive to meeting the demand for temperature detection in semiconductor production to achieve high-precision temperature control.

[0056] In the description of the present invention, it should be understood that the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of the features. In the description of the present invention, the meaning of "plurality" is at least two, such as two, three, etc., unless otherwise clearly and specifically defined.

[0057] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "example", "specific example", or "some examples" etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art may combine and combine the different embodiments or examples described in this specification and the features of the different embodiments or examples, unless they are contradictory.

[0058] All actions to obtain signals, information or data in this application are carried out in compliance with the relevant data protection laws and policies of the location and with the authorization given by the owner of the corresponding device.

[0059] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or make equivalent replacements for some of the technical features therein. However, these modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. A temperature sensor detection circuit, characterized in that: include: A constant current source module (100), used for providing a constant current; A thermistor module (200) is connected to the constant current source module (100), and the thermistor module (200) is used to obtain a constant current to form a temperature detection voltage corresponding to the temperature; A multi-level differential module (300), wherein the input end of the multi-level differential module (300) is connected to the thermistor module (200), the output end of the multi-level differential module (300) is used to be connected to an analog-to-digital conversion module, and the multi-level differential module (300) is used to perform at least two-level differential processing on a temperature detection voltage to form a detection output signal.

2. A temperature sensor detection circuit according to claim 1, characterized in that: The thermistor module (200) comprises a thermistor, a first bias resistor and a second bias resistor, the thermistor, the first bias resistor and the second bias resistor are sequentially connected in series to form a series circuit, one end of the series circuit is connected to the constant current source module (100), the other end of the series circuit is grounded, the multi-stage differential module (300) is connected to the series circuit, and a temperature detection voltage is formed at both ends of the thermistor.

3. A temperature sensor detection circuit according to claim 2, characterized in that: The multi-stage differential module (300) obtains the voltage across the thermistor and the voltage across the first bias resistor to perform two-stage differential processing, the resistance value of the first bias resistor is determined according to the lower limit of the resistance value variation range of the thermistor, so that the voltage across the thermistor is greater than the voltage across the first bias resistor, and the second bias resistor is determined according to the resistance value of the thermistor, the resistance value of the first bias resistor, the constant current of the constant current source and the power supply voltage, so that the potential of the thermistor and the potential of the first bias resistor are within a preset range of half the power supply voltage.

4. A temperature sensor detection circuit according to claim 1, characterized in that: It also includes a low-pass filtering module (400), and the low-pass filtering module (400) is connected to the output end of the multi-stage differential module (300).

5. A temperature sensor detection circuit according to claim 2, characterized in that: The multi-stage differential module (300) comprises a first differential amplifier unit (310), a second differential amplifier unit (320) and a third differential amplifier unit (330); a first input end of the first differential amplifier unit (310) is connected to one end of the thermistor, a second input end of the first differential amplifier unit (310) is connected to the other end of the thermistor, a first input end of the second differential amplifier unit (320) is connected to one end of the first bias resistor, the other end of the second differential amplifier unit (320) is connected to the other end of the first bias resistor, an output end of the first differential amplifier unit (310) is connected to a first input end of the third differential amplifier unit (330), an output end of the second differential amplifier unit (320) is connected to a second input end of the third differential amplifier unit (330), and an output end of the third differential amplifier unit (330) is used to be connected to an analog-to-digital conversion module.

6. A temperature sensor detection circuit according to claim 5, characterized in that: The first differential amplifier unit (310), the second differential amplifier unit (320) and the third differential amplifier unit (330) all include an instrument amplifier, a common-mode inductor, a first input resistor, a second input resistor and a multiple configuration resistor; the first input end of the common-mode inductor serves as the first input end of the differential amplifier unit; the second input end of the common-mode inductor serves as the second input end of the differential amplifier unit; the first output end of the common-mode inductor is connected to the non-inverting input end of the instrument amplifier through the first input resistor; the second output end of the common-mode inductor is connected to the inverting input end of the instrument amplifier through the second input resistor; the multiple configuration resistor is connected to the amplification multiple configuration end of the instrument amplifier; and the output end of the instrument amplifier serves as the output end of the differential amplifier unit.

7. A temperature sensor detection circuit according to claim 6, characterized in that: The first differential amplifying unit (310), the second differential amplifying unit (320) and the third differential amplifying unit (330) all further include a first filter capacitor, a second filter capacitor and a third filter capacitor, one end of the first filter capacitor is respectively connected to one end of the second filter capacitor, the first input resistor and the non-inverting input end of the instrument amplifier, the other end of the first filter capacitor is grounded, one end of the third filter capacitor is respectively connected to the other end of the second filter capacitor, the second input resistor and the inverting input end of the instrument amplifier, and the other end of the third filter capacitor is grounded.

8. A temperature sensor detection circuit according to claim 1, characterized in that: The constant current source module (100) comprises a voltage reference source, an operational amplifier, a transistor, a first resistor, a second resistor, a third resistor and a first capacitor; one end of the voltage reference source and the first resistor are both connected to a power supply end; the other end of the first resistor is respectively connected to a first input end of the operational amplifier and an input end of the transistor; the output end of the voltage reference source is respectively connected to one end of the second resistor, one end of the first capacitor and a second input end of the operational amplifier; the other end of the second resistor and the other end of the first capacitor are grounded; the output end of the operational amplifier is connected to one end of the third resistor; the other end of the third resistor is connected to a controlled end of the transistor; and the output end of the transistor is connected to the thermistor module (200).

9. A temperature sensor detection circuit according to claim 4, characterized in that: The low-pass filter module (400) comprises a low-pass filter resistor and a low-pass filter capacitor, one end of the low-pass filter resistor is connected to the output end of the multi-stage differential module (300), the other end of the low-pass filter resistor is connected to one end of the low-pass filter capacitor, the other end of the low-pass filter capacitor is grounded, and the other end of the low-pass filter resistor is used to connect to the analog-to-digital conversion module.

10. A semiconductor temperature control device, characterized in that: It comprises a temperature sensor detection circuit as claimed in any one of claims 1 to 9, and further comprises an analog-to-digital conversion module, the output end of the multi-stage differential module (300) being connected to the analog-to-digital conversion module.

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