Temperature control method and device and semiconductor process equipment

Abstract

The invention provides a temperature control method and device and semiconductor process equipment, and relates to the technical field of semiconductors, the temperature control method is used for carrying out temperature control on a target temperature zone in semiconductor equipment, and the semiconductor equipment comprises a heating device used for heating the target temperature zone. The temperature sensor is used for detecting the temperature of the target temperature zone; the cooling device is used for cooling the target temperature zone; the temperature control method comprises the following steps: acquiring a detection temperature detected by a temperature sensor; determining a target cooling output value of the cooling device and a target temperature value of the heating device according to a difference value between the detection temperature and a set temperature of the target temperature area; and controlling a cooling device to cool the target temperature zone according to the target cooling output value, and controlling a heating device to heat the target temperature zone according to the target temperature value. According to the invention, accurate control of the temperature of any set target temperature zone in the chamber can be realized, and the accuracy of temperature control of semiconductor process equipment is improved.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to a temperature control method, device and semiconductor process equipment. Background Art

[0002] In atomic layer deposition (ALD) process equipment, the overall temperature of the reaction chamber is usually maintained by a heating device in the outer chamber. However, when the platform for placing the wafer rises to the process position and forms a closed reaction chamber with the top plate of the inner chamber, as the process proceeds, the reaction gas in the inner chamber easily takes away a large amount of heat, causing the temperature of the inner chamber to drop, failing to meet the process temperature requirements, and then it is necessary to wait for the inner chamber to heat up, affecting the wafer production efficiency.

[0003] The related chamber temperature control technology usually sets a heating element and a temperature sensor in the wafer carrier. When the inner chamber is in a closed state, the temperature of the carrier can be controlled by controlling the heating element. However, this temperature control technology can only achieve temperature control of the carrier, and cannot achieve high-precision control of the temperature of other key process positions in the reaction chamber. Therefore, the related chamber temperature control technology still has the problem of low temperature control accuracy. Summary of the invention

[0004] In view of this, an object of the present invention is to provide a temperature control method, device and semiconductor process equipment, which can achieve precise control of the temperature of any set target temperature zone in the chamber, thereby improving the accuracy of temperature control of the semiconductor process equipment.

[0005] In order to achieve the above purpose, the technical solution adopted by the embodiment of the present invention is as follows:

[0006] In a first aspect, an embodiment of the present invention provides a temperature control method for controlling the temperature of a target temperature zone in a semiconductor device, wherein the semiconductor device comprises a heating device for heating the target temperature zone, a temperature sensor for detecting the temperature of the target temperature zone, and a cooling device for cooling the target temperature zone; the temperature control method comprises:

[0007] Acquiring a detection temperature detected by the temperature sensor;

[0008] Determining a target cooling output value of the cooling device and a target temperature value of the heating device according to a difference between the detected temperature and a set temperature of the target temperature zone;

[0009] The temperature-lowering device is controlled to cool the target temperature zone according to the target temperature-lowering output value, and the heating device is controlled to heat the target temperature zone according to the target temperature value.

[0010] Further, an embodiment of the present invention provides a first possible implementation manner of the first aspect, wherein determining the target cooling output value of the cooling device and the target temperature value of the heating device according to the difference between the detected temperature and the set temperature of the target temperature zone includes:

[0011] Determine a first output control percentage value by using a PID control algorithm according to a difference between a set temperature of the target temperature zone and the detected temperature;

[0012] Determine the target temperature value according to the first output control percentage value and the upper temperature limit value of the heating device;

[0013] The target cooling output value is determined according to the first output control percentage value and the output control upper limit value of the cooling device.

[0014] Further, an embodiment of the present invention provides a second possible implementation of the first aspect, wherein determining the target temperature value according to the first output control percentage value and the upper temperature limit value of the heating device includes:

[0015] The target temperature value is obtained by calculating the product of the first output control percentage value and the upper temperature limit value of the heating device.

[0016] Further, an embodiment of the present invention provides a third possible implementation manner of the first aspect, wherein determining the target cooling output value according to the first output control percentage value and the output control upper limit value of the cooling device includes:

[0017] Calculate the difference between 1 and the first output control percentage value to obtain a second output control percentage value;

[0018] The target cooling output value is obtained according to the product of the second output control percentage value and the output control upper limit value of the cooling device.

[0019] Further, the embodiment of the present invention provides a fourth possible implementation of the first aspect, wherein the cooling device comprises a cooling pipeline, a cooling medium contained in the cooling pipeline, and a flow controller for controlling the flow of the cooling medium in the cooling pipeline; the output control upper limit value of the cooling device is the flow upper limit value of the flow controller;

[0020] The step of determining the target cooling output value according to the first output control percentage value and the output control upper limit value of the cooling device includes:

[0021] Determining the target flow value according to the first output control percentage value and the flow upper limit value of the flow controller;

[0022] The controlling the cooling device to cool the target temperature zone according to the target cooling output value includes:

[0023] The flow controller is controlled to control the flow of the cooling medium in the cooling pipeline according to the target flow value, so as to cool the target temperature zone.

[0024] Further, the embodiment of the present invention provides a fifth possible implementation of the first aspect, wherein controlling the heating device to heat the target temperature zone according to the target temperature value includes:

[0025] Detecting the current actual temperature of the heating device;

[0026] Determining a percentage control amount of the heating power of the heating device according to a difference between the target temperature value and the actual temperature;

[0027] Obtaining a target heating power of the heating device according to the product of the percentage control amount of the heating power and the maximum heating power of the heating device;

[0028] The heating device is controlled to operate at the target heating power to heat the target temperature zone.

[0029] In a second aspect, an embodiment of the present invention further provides a temperature control device for controlling the temperature of a target temperature zone in a semiconductor device, wherein the semiconductor device comprises a heating device for heating the target temperature zone, a temperature sensor for detecting the temperature of the target temperature zone, and a cooling device for cooling the target temperature zone;

[0030] The temperature control device includes a processor and a memory, wherein a computer program is stored in the memory, and when the processor executes the computer program, the temperature control method described in any one of the first aspects is executed.

[0031] In a third aspect, an embodiment of the present invention further provides a semiconductor process equipment, comprising a target temperature zone, and a heating device, a cooling device, a temperature sensor and a temperature control device as described in the second aspect arranged corresponding to the target temperature zone;

[0032] The heating device is used to heat the target temperature zone;

[0033] The temperature reduction device is used to reduce the temperature of the target temperature zone;

[0034] The temperature sensor is used to detect the temperature of the target temperature zone;

[0035] The temperature control device is used to control the cooling device to cool the target temperature zone according to the difference between the detected temperature detected by the temperature sensor and the set temperature of the target temperature zone, and to control the heating device to heat the target temperature zone.

[0036] Further, the embodiment of the present invention provides a first possible implementation of the second aspect, wherein the semiconductor process equipment further comprises: an outer chamber, an inner chamber arranged in the outer chamber, and a gas mixing element arranged on the top of the inner chamber;

[0037] The target temperature zone includes a first target temperature zone, and the first target temperature zone is the gas mixture;

[0038] The heating device corresponding to the first target temperature zone is arranged in the outer chamber and located above the inner chamber, and the cooling device corresponding to the first target temperature zone is arranged at the periphery of the gas mixture.

[0039] Further, the embodiment of the present invention provides a second possible implementation of the second aspect, wherein the semiconductor process equipment further comprises: an outer chamber, an inner chamber arranged in the outer chamber, and a gas mixing element arranged on the top of the inner chamber;

[0040] The target temperature zone includes a second target temperature zone, and the second target temperature zone is a cavity of the inner chamber;

[0041] The heating device corresponding to the second target temperature zone is arranged in the outer chamber and located below the inner chamber, and the cooling device corresponding to the second target temperature zone is arranged at the periphery of the inner chamber.

[0042] Further, an embodiment of the present invention provides a third possible implementation of the second aspect, wherein the temperature reduction device includes a cooling pipeline, a cooling medium contained in the cooling pipeline, a flow controller for controlling the flow of the cooling medium in the cooling pipeline, and a gas nozzle connected to the cooling pipeline;

[0043] The cooling medium is gas, and the gas outlet of the gas nozzle faces the target temperature zone.

[0044] The embodiment of the present invention provides a temperature control method, device and semiconductor process equipment, the method is used to control the temperature of a target temperature zone in a semiconductor device, the semiconductor device includes a heating device for heating the target temperature zone, a temperature sensor for detecting the temperature of the target temperature zone and a cooling device for cooling the target temperature zone; the temperature control method includes: obtaining a detection temperature detected by the temperature sensor; determining a target cooling output value of the cooling device and a target temperature value of the heating device according to the difference between the detection temperature and the set temperature of the target temperature zone; controlling the cooling device to cool the target temperature zone according to the target cooling output value, and controlling the heating device to heat the target temperature zone according to the target temperature value. The present invention can achieve precise control of the temperature of the target temperature zone by setting a heating device and a cooling device in the target temperature zone that needs to be precisely controlled in temperature, and controlling the cooling device to cool the target temperature zone according to the detection temperature and the set temperature of the target temperature zone, and controlling the heating device to heat the target temperature zone, thereby improving the accuracy of temperature control of the target temperature zone inside the semiconductor process equipment.

[0045] Other features and advantages of the embodiments of the present invention will be described in the following description, or some features and advantages can be inferred or determined without doubt from the description, or can be learned by implementing the above-mentioned techniques of the embodiments of the present invention.

[0046] In order to make the above-mentioned objects, features and advantages of the present invention more obvious and easy to understand, preferred embodiments are given below and described in detail with reference to the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0047] In order to more clearly illustrate the specific implementation methods of the present invention or the technical solutions in the prior art, the drawings required for use in the specific implementation methods or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are some implementation methods of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0048] Figure 1 A schematic diagram of the relevant ALD chamber structure is shown;

[0049] Figure 2 A flow chart of a temperature control method provided by an embodiment of the present invention is shown;

[0050] Figure 3 A schematic diagram of the structure of a target temperature zone control system provided by an embodiment of the present invention is shown;

[0051] Figure 4 A schematic diagram of the reaction chamber structure of a semiconductor process equipment provided by an embodiment of the present invention is shown;

[0052] Figure 5 A schematic diagram comparing the temperature control effects of a gas mixing element in a first target temperature zone provided by an embodiment of the present invention is shown. DETAILED DESCRIPTION

[0053] In order to make the purpose, technical solution and advantages of the embodiments of the present invention clearer, the technical solution of the present invention will be described below in conjunction with the drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, rather than all of the embodiments.

[0054] See Figure 1 The schematic diagram of the ALD chamber structure shown in the figure shows that the reaction chamber includes an outer chamber 11, an upper heating wire 12, a lower heating wire 13, a top plate 14 of an inner chamber, a substrate 15, a conveyor 16, an air inlet pipe 17 of the inner chamber and a gas mixing area 18. The conveyor 16 is used to carry a wafer 19, and the conveyor 16 can move up and down. Figure 1 As shown, when the conveyor 16 rises to the process position, the conveyor 16 is in close contact with the substrate 15 and forms a closed reaction chamber (ie, inner chamber) with the top plate 14 of the inner chamber, so that the wafer 19 can be processed in the closed reaction chamber.

[0055] During the process, the reaction gas enters the gas mixing area 18 through the gas inlet pipe 17 for mixing, and then enters the closed inner chamber 14 through the pipeline, adheres to the surface of the wafer to react, and then the remaining gas is extracted from the pipeline outlet at the substrate 15. In order to prevent the gas from decomposing due to too high a process temperature, or condensing due to too low a process temperature, which causes the process quality to deteriorate, it is necessary to control the temperature of the gas before and after the reaction to prevent the gas from condensing and clogging the pipeline due to insufficient or too low a temperature.

[0056] The relevant temperature control technology is provided with a heating element and a temperature sensor in the wafer carrier, which can heat the wafer on the carrier and control the temperature of the carrier. The fixed plate is provided with a heat dissipation air duct and a heat dissipation air groove, which can cool down the wafer on the carrier when the temperature of the carrier is too high. However, the relevant temperature control technology only controls the temperature of the wafer base, and cannot perform high-precision control on other key process positions in the reaction chamber (such as the gas mixing area and the inner chamber). In the continuous process, the reaction gas in the inner chamber easily takes away a lot of heat, causing the temperature of the inner chamber to drop, which does not meet the process temperature requirements, and then needs to wait for the temperature of the inner chamber to rise, which affects the wafer production efficiency; and because the key process positions in the reaction chamber usually do not have a heating function, they only rely on the upper heating wire and the lower heating wire for heating. During the process, only the temperature of the upper heating wire and the lower heating wire is controlled, and the ambient temperature of the inner chamber cannot be accurately controlled.

[0057] In order to improve the above problems, an embodiment of the present invention provides a temperature control method, device and semiconductor process equipment, and the embodiment of the present invention is described in detail below.

[0058] This embodiment provides a temperature control method for controlling the temperature of a target temperature zone in a semiconductor device, wherein the semiconductor device includes a heating device for heating the target temperature zone, a temperature sensor for detecting the temperature of the target temperature zone, and a cooling device for cooling the target temperature zone; see Figure 2 The temperature control method provided in this embodiment mainly includes the following steps:

[0059] Step S202, obtaining a detection temperature detected by a temperature sensor;

[0060] The target temperature zone may be any key process part in the semiconductor device that requires precise temperature control, such as a gas mixing area and / or a cavity of an inner chamber. A temperature sensor is disposed in the target temperature zone to detect the actual temperature of the target temperature in real time, thereby realizing closed-loop control of the temperature of the target temperature zone.

[0061] Step S204, determining a target cooling output value of the cooling device and a target temperature value of the heating device according to a difference between the detected temperature and a set temperature of the target temperature zone;

[0062] The current temperature deviation of the target temperature zone can be obtained by calculating the difference between the current detected temperature of the temperature sensor and the set temperature of the target temperature zone. The target cooling output value of the cooling device and the target temperature value of the heating device can be determined based on the temperature deviation. The above-mentioned target cooling output value can be a parameter that can represent the cooling rate of the cooling device. For example, when the cooling device is a cooling pipeline, the target cooling output value can be the cooling medium flow rate or cooling medium temperature in the pipeline.

[0063] Step S206, controlling the cooling device to cool the target temperature zone according to the target cooling output value, and controlling the heating device to heat the target temperature zone according to the target temperature value.

[0064] When the temperature deviation between the detected temperature and the set temperature of the target temperature zone is greater than 0, it indicates that the detected temperature of the target temperature zone is greater than the set temperature. The target temperature value of the heating device can be controlled to decrease to reduce the heating power, and the target cooling output value of the cooling device can be controlled to increase to increase the cooling rate, cool the target temperature zone, and reduce the actual temperature of the target temperature zone. When the temperature deviation between the detected temperature and the set temperature of the target temperature zone is less than 0, it indicates that the detected temperature of the target temperature zone is less than the set temperature. The target temperature value of the heating device can be controlled to increase, heat the target temperature zone, and increase the heating power. The target cooling output value of the cooling device can be controlled to decrease to reduce the cooling rate, increase the actual temperature of the target temperature zone, and keep the temperature of the target temperature zone close to the set temperature.

[0065] The temperature control method provided in the present embodiment can realize precise control of the temperature of the target temperature zone by setting a heating device and a cooling device in the target temperature zone where precise temperature control is required, and controlling the cooling device to cool the target temperature zone according to the detected temperature and the set temperature of the target temperature zone, and controlling the heating device to heat the target temperature zone, thereby improving the accuracy of temperature control of the target temperature zone inside the semiconductor process equipment.

[0066] In one embodiment, this embodiment provides an implementation method for determining a target cooling output value of a cooling device and a target temperature value of a heating device according to a difference between a detected temperature and a set temperature of a target temperature zone, which can be specifically performed with reference to the following steps:

[0067] Step (1): Determine a first output control percentage value through a PID control algorithm according to the difference between the set temperature and the detected temperature of the target temperature zone;

[0068] See Figure 3 As shown in the structural schematic diagram of the target temperature zone control system, the difference between the set temperature S1 of the target temperature zone and the detected temperature x1 is input into the PID controller, so that the PID controller calculates a control amount of 0 to 100% based on the PID control algorithm, which is recorded as the first output control percentage value U1.

[0069] Step (2): determining a target temperature value according to the first output control percentage value and the upper temperature limit value of the heating device;

[0070] The range conversion calculation is performed based on the first output control percentage value and the upper temperature limit value of the heating device, such as Figure 3 As shown, the first output control percentage value U1 is converted into a target temperature value S2 of the heating device, so as to control the heating power of the heating device based on the target temperature value S2.

[0071] In a specific embodiment, during the range conversion calculation, the product of the first output control percentage value U1 and the upper temperature limit value of the heating device can be calculated to obtain the target temperature value S2 of the heating device. The upper temperature limit value is the maximum value within the set temperature range of the heating device.

[0072] Step (3): Determine the target cooling output value according to the first output control percentage value and the output control upper limit value of the cooling device.

[0073] The range conversion calculation is performed based on the first output control percentage value and the output control upper limit value of the cooling device, such as Figure 3 As shown, the first output control percentage value U1 range is converted into the target cooling output value S3 of the cooling device, so that the lower computer controls the cooling device to cool the target temperature zone.

[0074] In a specific implementation, the difference between 1 and the first output control percentage value is calculated to obtain the second output control percentage value; the target cooling output value is obtained according to the product of the second output control percentage value and the output control upper limit value of the cooling device, that is, the target cooling output value = (1-first output control percentage value) * output control upper limit value of the cooling device. For example, when the above-mentioned target cooling output value is the gas flow rate, the output control upper limit value of the cooling device is the maximum gas flow rate value of the cooling device.

[0075] In one embodiment, the cooling device provided in this embodiment includes a cooling pipeline, a cooling medium contained in the cooling pipeline, and a flow controller for controlling the flow of the cooling medium in the cooling pipeline; the output control upper limit value of the cooling device is the flow upper limit value of the flow controller; this embodiment provides a specific implementation method for determining the target cooling output value based on the first output control percentage value and the output control upper limit value of the cooling device: the target flow value is determined based on the first output control percentage value and the flow upper limit value of the flow controller.

[0076] This embodiment also provides a specific implementation method for controlling the cooling device to cool the target temperature zone according to the target cooling output value: controlling the flow controller to control the flow of the cooling medium in the cooling pipeline according to the target flow value to cool the target temperature zone.

[0077] The cooling medium can be gas or liquid. When the cooling medium is gas, the target flow value = (1-first output control percentage value) * flow upper limit value. When the cooling medium is liquid, the target flow value = first output control percentage value * flow upper limit value. The lower computer transmits the calculated target flow value to the flow controller of the cooling device, so that the flow controller controls the cooling medium flow in the cooling pipeline to the target flow value.

[0078] In one embodiment, when the above-mentioned cooling medium is a liquid, the cooling device can also be provided with a temperature controller to control the temperature of the cooling medium or the cooling pipeline. The target temperature zone is cooled by controlling the temperature of the cooling medium or the cooling pipeline. The target temperature value of the cooling medium or the cooling pipeline can be calculated as follows: target temperature value = first output control percentage value * (maximum set temperature - minimum set temperature) + minimum set temperature. The above-mentioned minimum set temperature to maximum set temperature are the set temperature range of the cooling medium or the cooling pipeline.

[0079] In one embodiment, the cooling device may include a metal pipeline and a temperature controller for controlling the temperature of the metal pipeline. The temperature controller controls the metal pipeline to cool down with a first output control percentage value as the heat reduction power to cool down the target temperature zone.

[0080] In one embodiment, this embodiment provides a specific implementation method of controlling the heating device to heat the target temperature zone according to the target temperature value:

[0081] Detect the current actual temperature of the heating device; determine the percentage control amount of the heating power of the heating device according to the difference between the target temperature value and the actual temperature; obtain the target heating power of the heating device according to the product of the percentage control amount of the heating power and the maximum heating power of the heating device; control the heating device to operate at the target heating power to heat the target temperature zone.

[0082] The actual temperature of the heating device is detected by a temperature sensor provided at the heating device. Figure 3 As shown, the difference between the target temperature value S2 and the actual temperature x2 is calculated, S2-x2 is input into the PID controller, so that the PID controller outputs the percentage control amount U2 of the heating power of the heating device, and the product of the percentage control amount U2 of the heating power and the maximum heating power of the heating device is calculated to obtain the target heating power P1 of the heating device, and the target heating power P1 is transmitted to the heating device so that the heating device operates at the target heating power P1, thereby achieving heating of the target temperature zone.

[0083] The temperature control method provided in this embodiment can perform high-precision temperature control on any selected temperature zone in the reaction chamber of the semiconductor process equipment by setting two nested temperature control systems in the target temperature zone, and can accurately reflect the process temperature of the target temperature zone, thereby improving process stability and improving process performance.

[0084] Corresponding to the temperature control method provided in the above embodiment, an embodiment of the present invention provides a temperature control device for controlling the temperature of a target temperature zone in a semiconductor device, wherein the semiconductor device comprises a heating device for heating the target temperature zone, a temperature sensor for detecting the temperature of the target temperature zone, and a cooling device for cooling the target temperature zone;

[0085] The temperature control device includes a processor and a memory. The memory stores a computer program. When the processor executes the computer program, the temperature control method provided in the above embodiment is executed.

[0086] Corresponding to the temperature control method provided in the above embodiment, an embodiment of the present invention provides a semiconductor process equipment, including a target temperature zone, and a heating device, a cooling device, a temperature sensor and the temperature control device provided in the above embodiment arranged corresponding to the target temperature zone;

[0087] The heating device is used to heat the target temperature zone;

[0088] The cooling device is used to cool the target temperature zone;

[0089] The temperature sensor is used to detect the temperature of the target temperature zone;

[0090] The temperature control device is used to control the cooling device to cool the target temperature zone according to the difference between the detected temperature detected by the temperature sensor and the set temperature of the target temperature zone, and to control the heating device to heat the target temperature zone.

[0091] In one embodiment, the semiconductor process equipment provided by this embodiment further includes: an outer chamber, an inner chamber arranged in the outer chamber, and a gas mixing element arranged on the top of the inner chamber;

[0092] The target temperature zone includes a first target temperature zone, and the first target temperature zone is a gas mixing element;

[0093] The heating device corresponding to the first target temperature zone is arranged in the outer chamber and located above the inner chamber, and the cooling device corresponding to the first target temperature zone is arranged on the periphery of the gas mixing element.

[0094] In one embodiment, the semiconductor process equipment provided by this embodiment further includes: an outer chamber, an inner chamber arranged in the outer chamber, and a gas mixing element arranged on the top of the inner chamber;

[0095] The target temperature zone includes a second target temperature zone, and the second target temperature zone is a cavity of the inner chamber;

[0096] The heating device corresponding to the second target temperature zone is arranged in the outer chamber and located below the inner chamber, and the cooling device corresponding to the second target temperature zone is arranged at the periphery of the inner chamber.

[0097] In one embodiment, the cooling device provided in this embodiment includes a cooling pipeline, a cooling medium contained in the cooling pipeline, a flow controller for controlling the flow of the cooling medium in the cooling pipeline, and a gas nozzle connected to the cooling pipeline;

[0098] The cooling medium is gas, and the gas outlet of the gas nozzle is directed toward the target temperature zone.

[0099] See Figure 4 A schematic diagram of the reaction chamber structure of a semiconductor process equipment is shown, the reaction chamber comprising: an outer chamber 41, an inner chamber 42, a first gas nozzle 43 and a second gas nozzle 44, the first gas nozzle 43 is located at the periphery of the first target temperature zone gas mixture (i.e., the gas mixing area 18), the non-reactive gas sprayed by the first gas nozzle 43 can purge and cool the first target temperature zone gas mixture, the upper heating filament 12 is a heating device corresponding to the first target temperature zone, the upper heating filament 12 is arranged in the outer chamber and located above the inner chamber.

[0100] like Figure 4 As shown, the second gas nozzle 44 is located at the periphery of the cavity of the inner chamber of the second target temperature zone (i.e., the top plate 14 of the inner chamber), and the non-reactive gas ejected by the second gas nozzle 44 can purge and cool the cavity of the inner chamber of the second target temperature zone. The lower heating wire 13 is a heating device corresponding to the second target temperature zone, and the upper heating wire 12 is arranged in the outer chamber and located below the inner chamber.

[0101] In one embodiment, the temperature sensor for detecting the temperature of the target temperature zone and the temperature sensor for detecting the temperature of the heating device can both be temperature thermocouples. By setting temperature thermocouples at the target temperature zone and the heating device, the actual temperature of the target temperature zone and the actual temperature of the heating device can be detected quickly and accurately, thereby improving the temperature detection accuracy.

[0102] Exemplarily, the target temperature zone provided in this embodiment includes a first target temperature zone gas mixture (i.e., a gas mixing area) and a cavity of a second target temperature zone inner chamber (e.g., a top plate of the inner chamber). Taking the HfO process in the HiK chamber as an example, when coating, the target temperature of the gas mixture Mix position is set to 280°C, the target temperature of the cavity Topplate of the inner chamber is set to 280°C, the target setting temperatures of the upper heating wire and the lower heating wire are both 380°C, the first output control percentage value U1(t) output by the PID controller is in the range of (0% to 100%), and the temperature range of the upper heating wire and the lower heating wire is 0 to 560°C.

[0103] Before starting the process, the target temperature of the gas mixture Mix is ​​stabilized at 273.5°C, and the target temperature of the cavity Topplate of the inner chamber is stabilized at 273.5°C. At this time, the first output control percentage value U1(t) output by the PID controller of the gas mixture Mix is ​​56.1%, and the first output control percentage value U1(t) output by the PID controller of the cavity Topplate of the inner chamber is about 87.3%. The temperature of the upper heating wire is stabilized at 314.3°C, and the temperature of the lower heating wire is stabilized at about 489°C (that is, the target setting temperature of the upper heating wire is: 56.1%*560=314.3°C, and the target setting temperature of the lower heating wire is: 87.3%*560=489°C). The N of the cooling device corresponding to the gas mixture Mix is 2 The purge flow rate is 43.9 Sccm, and the N of the cooling device corresponding to the cavity Topplate of the inner chamber 2 The purge flow rate is 12.7 Sccm (the N of the cooling device corresponding to the gas mixture Mix) 2 The calculation formula for the purge flow rate is: ((1-56.1%)*100)=43.9Sccm, the N of the cooling device corresponding to the cavity Topplate of the inner chamber 2 The calculation formula for the purge flow rate is: ((1-87.3%)*100)=12.7 Sccm)).

[0104] When the process starts, the actual temperature of the gas mixture in the first target temperature zone (i.e., the gas mixing area) and the cavity of the inner chamber in the second target temperature zone (i.e., the top plate of the inner chamber) begins to decrease, and the temperature thermocouples at the corresponding positions are fed back to the corresponding PID controller. The percentage control amount of the heating power output by the corresponding PID controller increases, and the target heating power of the upper heating wire and the lower heating wire increases, so that the set temperatures of the upper heating wire and the lower heating wire start to increase from 314.3°C and 489°C respectively, N 2 The purge flow rate begins to decrease, so that the actual temperature of the gas mixture in the first target temperature zone and the actual temperature of the chamber in the second target temperature zone can be stabilized near the target temperature.

[0105] See Figure 5 The temperature control effect comparison diagram of the gas mixing element in the first target temperature zone is shown in FIG. 1 . The related temperature control scheme does not control the temperature of key components such as the gas mixing element and the cavity of the inner chamber, such as Figure 5 As shown, during the process, the actual temperature of the gas mixture gradually decreases from 276.5°C to 271.5°C, and the temperature control scheme provided in this embodiment can control the actual temperature of the gas mixture at 273.5±0.2°C during the process, thereby improving the temperature control effect of key components.

[0106] The semiconductor process equipment provided in this embodiment has the same implementation principle and technical effects as those of the aforementioned embodiments. For the sake of brief description, for matters not mentioned in the equipment embodiment, reference may be made to the corresponding contents in the aforementioned method embodiment.

[0107] An embodiment of the present invention provides a computer-readable medium, wherein the computer-readable medium stores computer-executable instructions. When the computer-executable instructions are called and executed by a processor, the computer-executable instructions prompt the processor to implement the method described in the above embodiment.

[0108] Those skilled in the art can clearly understand that, for the convenience and brevity of description, the specific working process of the system described above can refer to the corresponding process in the aforementioned embodiment, and will not be repeated here.

[0109] The computer program product of the temperature control method of semiconductor process equipment provided in the embodiment of the present invention includes a computer-readable storage medium storing program code. The instructions included in the program code can be used to execute the method described in the previous method embodiment. The specific implementation can be referred to the method embodiment, which will not be repeated here.

[0110] In addition, in the description of the embodiments of the present invention, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0111] If the functions are implemented in the form of software functional units and sold or used as independent products, they can be stored in a computer-readable storage medium. Based on this understanding, the technical solution of the present invention, or the part that contributes to the prior art or the part of the technical solution, can be embodied in the form of a software product. The computer software product is stored in a storage medium, including several instructions for a computer device (which can be a personal computer, a server, or a network device, etc.) to perform all or part of the steps of the methods described in each embodiment of the present invention. The aforementioned storage medium includes: U disk, mobile hard disk, read-only memory (ROM, Read-Only Memory), random access memory (RAM, Random Access Memory), disk or optical disk, etc., which can store program codes.

[0112] In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., indicating the orientation or positional relationship, are based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as limiting the present invention. In addition, the terms "first", "second", and "third" are used for descriptive purposes only, and cannot be understood as indicating or implying relative importance.

[0113] Finally, it should be noted that the above-described embodiments are only specific implementations of the present invention, which are used to illustrate the technical solutions of the present invention, rather than to limit them. The protection scope of the present invention is not limited thereto. Although the present invention is described in detail with reference to the above-described embodiments, ordinary technicians in the field should understand that any technician familiar with the technical field can still modify the technical solutions recorded in the above-described embodiments within the technical scope disclosed by the present invention, or can easily think of changes, or make equivalent replacements for some of the technical features therein; and these modifications, changes or replacements do not make the essence of the corresponding technical solutions deviate from the spirit and scope of the technical solutions of the embodiments of the present invention, and should be included in the protection scope of the present invention. Therefore, the protection scope of the present invention shall be based on the protection scope of the claims.

Claims

1. A temperature control method, characterized in that: Used to control the temperature of a target temperature zone in a semiconductor device, the semiconductor device comprising a heating device for heating the target temperature zone, a temperature sensor for detecting the temperature of the target temperature zone, and a cooling device for cooling the target temperature zone; The temperature control method comprises: Acquiring a detection temperature detected by the temperature sensor; Determining a target cooling output value of the cooling device and a target temperature value of the heating device according to a difference between the detected temperature and a set temperature of the target temperature zone; The temperature-lowering device is controlled to cool the target temperature zone according to the target temperature-lowering output value, and the heating device is controlled to heat the target temperature zone according to the target temperature value.

2. The temperature control method according to claim 1, characterized in that: The step of determining the target cooling output value of the cooling device and the target temperature value of the heating device according to the difference between the detected temperature and the set temperature of the target temperature zone comprises: Determine a first output control percentage value by using a PID control algorithm according to a difference between a set temperature of the target temperature zone and the detected temperature; Determine the target temperature value according to the first output control percentage value and the upper temperature limit value of the heating device; The target cooling output value is determined according to the first output control percentage value and the output control upper limit value of the cooling device.

3. The temperature control method according to claim 2, characterized in that: The step of determining the target temperature value according to the first output control percentage value and the upper temperature limit value of the heating device comprises: The target temperature value is obtained by calculating the product of the first output control percentage value and the upper temperature limit value of the heating device.

4. The temperature control method according to claim 2, characterized in that: The step of determining the target cooling output value according to the first output control percentage value and the output control upper limit value of the cooling device includes: Calculate the difference between 1 and the first output control percentage value to obtain a second output control percentage value; The target cooling output value is obtained according to the product of the second output control percentage value and the output control upper limit value of the cooling device.

5. The temperature control method according to claim 2, characterized in that: The cooling device comprises a cooling pipeline, a cooling medium contained in the cooling pipeline, and a flow controller for controlling the flow of the cooling medium in the cooling pipeline; the output control upper limit value of the cooling device is the flow upper limit value of the flow controller; The step of determining the target cooling output value according to the first output control percentage value and the output control upper limit value of the cooling device includes: Determining the target flow value according to the first output control percentage value and the flow upper limit value of the flow controller; The controlling the cooling device to cool the target temperature zone according to the target cooling output value includes: The flow controller is controlled to control the flow of the cooling medium in the cooling pipeline according to the target flow value, so as to cool the target temperature zone.

6. The temperature control method according to claim 1, characterized in that: The controlling the heating device to heat the target temperature zone according to the target temperature value includes: Detecting the current actual temperature of the heating device; Determining a percentage control amount of the heating power of the heating device according to a difference between the target temperature value and the actual temperature; Obtaining a target heating power of the heating device according to the product of the percentage control amount of the heating power and the maximum heating power of the heating device; The heating device is controlled to operate at the target heating power to heat the target temperature zone.

7. A temperature control device, characterized in that: Used to control the temperature of a target temperature zone in a semiconductor device, the semiconductor device comprising a heating device for heating the target temperature zone, a temperature sensor for detecting the temperature of the target temperature zone, and a cooling device for cooling the target temperature zone; The temperature control device comprises a processor and a memory, wherein a computer program is stored in the memory, and when the processor executes the computer program, the temperature control method according to any one of claims 1 to 6 is executed.

8. A semiconductor process equipment, characterized in that: It comprises a target temperature zone, and a heating device, a cooling device, a temperature sensor and a temperature control device as claimed in claim 7 arranged corresponding to the target temperature zone; The heating device is used to heat the target temperature zone; The temperature reduction device is used to reduce the temperature of the target temperature zone; The temperature sensor is used to detect the temperature of the target temperature zone; The temperature control device is used to control the cooling device to cool the target temperature zone according to the difference between the detected temperature detected by the temperature sensor and the set temperature of the target temperature zone, and to control the heating device to heat the target temperature zone.

9. The semiconductor process equipment according to claim 8, characterized in that: Also includes: An outer chamber, an inner chamber disposed within the outer chamber, and a gas mixing element disposed on the top of the inner chamber; The target temperature zone includes a first target temperature zone, and the first target temperature zone is the gas mixture; The heating device corresponding to the first target temperature zone is arranged in the outer chamber and located above the inner chamber, and the cooling device corresponding to the first target temperature zone is arranged at the periphery of the gas mixture.

10. The semiconductor process equipment according to claim 8, characterized in that: Also includes: An outer chamber, an inner chamber disposed within the outer chamber, and a gas mixing element disposed on the top of the inner chamber; The target temperature zone includes a second target temperature zone, and the second target temperature zone is a cavity of the inner chamber; The heating device corresponding to the second target temperature zone is arranged in the outer chamber and located below the inner chamber, and the cooling device corresponding to the second target temperature zone is arranged at the periphery of the inner chamber.

11. The semiconductor process equipment according to claim 8, characterized in that: The temperature reduction device includes a cooling pipeline, a cooling medium contained in the cooling pipeline, a flow controller for controlling the flow of the cooling medium in the cooling pipeline, and a gas nozzle connected to the cooling pipeline; The cooling medium is gas, and the gas outlet of the gas nozzle faces the target temperature zone.

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