High-frequency module

Abstract

A high-frequency module (1) is provided with: a module substrate (91) having a main surface (91a); a conductive member (93) that is set to a ground potential and that divides the main surface (91a) into a region (R1), a region (R2), and a region (R3) in a plan view of the main surface (91a); a switch (51) disposed in the region (R2) and connected to the antenna connection terminal (100); a power amplifier (11) disposed in the region (R1) and connected to the antenna connection terminal (100) via a switch (51); and a low noise amplifier (21) disposed in the region (R3) and connected to the antenna connection terminal (100) via a switch (51).

Description

[0001] This application is a divisional application of the invention patent application with application date of April 14, 2021, application number 202180058176.0, and invention name “High Frequency Module and Communication Device”. Technical Field

[0002] The present invention relates to a high-frequency module and a communication device. Background Art

[0003] In mobile communication devices such as cellular phones, in particular, as multi-band communication has been developed, the arrangement structure of circuit elements constituting a high-frequency front-end circuit has become more complicated.

[0004] Patent document 1 discloses a communication module having a shielding wall formed to divide the installation area of ​​one or both of the system unit and the power circuit unit and the installation area of ​​the high-frequency processing unit. This can suppress the intrusion of noise from the system unit and the power circuit unit into the high-frequency processing unit and achieve miniaturization of the communication module.

[0005] Prior Art Literature

[0006] Patent Literature

[0007] Patent Document 1: Japanese Patent Application Publication No. 2015-111747 Summary of the invention

[0008] Problem that the invention aims to solve

[0009] However, in the above-mentioned conventional technology, the inflow of noise into the high-frequency signal may not be sufficiently suppressed in some cases.

[0010] Therefore, an object of the present invention is to provide a high-frequency module and a communication device capable of suppressing the inflow of noise into a high-frequency signal.

[0011] Technical solutions to solve problems

[0012] A high-frequency module according to one embodiment of the present invention comprises: a module substrate having a main surface; a conductive member that divides the main surface into a first region, a second region, and a third region when viewed from above the main surface and is set to a ground potential; a first switch that is arranged in the second region and connected to an antenna connection terminal; a power amplifier that is arranged in the first region and connected to the antenna connection terminal via the first switch; and a low-noise amplifier that is arranged in the third region and connected to the antenna connection terminal via the first switch.

[0013] Furthermore, a communication device according to one embodiment of the present invention includes: a signal processing circuit that processes a high-frequency signal; and the high-frequency module according to the above-mentioned one embodiment that transmits the high-frequency signal processed by the signal processing circuit.

[0014] Effects of the Invention

[0015] According to the present invention, it is possible to suppress the inflow of noise into a high-frequency signal. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 It is a circuit configuration diagram of a high-frequency module and a communication device according to an embodiment.

[0017] Figure 2 It is a top view of the high-frequency module according to the embodiment.

[0018] Figure 3 yes Figure 2 1 is a cross-sectional view of the high-frequency module according to the embodiment taken along line III-III.

[0019] Figure 4 yes Figure 2 sectional view of the high-frequency module according to the embodiment taken along line IV-IV.

[0020] Figure 5 yes Figure 2 A cross-sectional view of the high-frequency module according to the embodiment taken along line VV of FIG.

[0021] Figure 6 It is a top view of the high-frequency module according to the first modification.

[0022] Figure 7 It is a top view of a high-frequency module according to Modification 2.

[0023] Figure 8 It is a top view of a high-frequency module according to Modification 3.

[0024] Fig. 9 It is a top view of a high-frequency module according to Modification 4.

[0025] Fig.10 It is a top view of a high-frequency module according to Modification 5.

[0026] Fig.11 It is a top view of a high-frequency module according to Modification 6.

[0027] Description of Reference Numerals

[0028] 1, 1A, 1B, 1C, 1D, 1E, 1F: high frequency module;

[0029] 2: Antenna;

[0030] 3: RFIC;

[0031] 4: BBIC;

[0032] 5: Communication device;

[0033] 11, 12: power amplifier;

[0034] 20: Electronic components;

[0035] 21, 22: low noise amplifier;

[0036] 51, 52, 53: switch;

[0037] 61, 62, 63: duplexer;

[0038] 61T, 62T, 63T: transmit filter;

[0039] 61Ta, 62Ta: input terminals;

[0040] 61R, 62R, 63R: receiving filter;

[0041] 91: module substrate;

[0042] 91a, 91b: main surface;

[0043] 92: Resin components;

[0044] 93: conductive member;

[0045] 93a: Next door to No. 1;

[0046] 93b: 2nd next door;

[0047] 95: shielding film;

[0048] 100: Antenna connection terminal;

[0049] 111, 112: high frequency input terminals;

[0050] 121, 122: high frequency output terminals;

[0051] 150: electrode terminal;

[0052] 193a, 193b, 193c, 193d: part of the wall;

[0053] 511, 512, 513, 514, 521, 522, 523, 531, 532, 533: terminals;

[0054] R1, R2, R3: area;

[0055] VL1, VL2: Straight line. DETAILED DESCRIPTION

[0056] Hereinafter, the high-frequency module and the communication device involved in the embodiments of the present invention are described in detail using the accompanying drawings. In addition, the embodiments described below each illustrate a specific example of the present invention. Therefore, the numerical values, shapes, materials, components, configurations of components, and connection methods shown in the following embodiments are examples, and their purpose is not to limit the present invention. Therefore, the components in the following embodiments that are not recorded in the independent claims are described as arbitrary components.

[0057] In addition, each figure is a schematic diagram and may not be strictly illustrated. Therefore, for example, the scales in each figure may not be consistent. In addition, in each figure, the same reference numerals are marked for substantially the same structure, and repeated descriptions are omitted or simplified.

[0058] In addition, in this specification, terms such as parallel or perpendicular that indicate the relationship between elements, terms such as rectangle or straight line that indicate the shape of elements, and numerical ranges are not expressions that express only strict meanings, but rather mean substantially equivalent ranges, for example, expressions that also include differences of several percent.

[0059] In addition, in this specification, the terms "above" and "below" do not refer to the upper direction (vertically above) and the lower direction (vertically below) in absolute spatial recognition, but are used as terms defined by relative positional relationships based on the stacking order in the stacking structure. In addition, the terms "above" and "below" are not only applicable to the case where two components are arranged with a gap between them and there is another component between them, but also to the case where two components are arranged closely to each other and the two components are in contact with each other.

[0060] In addition, in this specification and the drawings, the x-axis, y-axis, and z-axis represent three axes of a three-dimensional orthogonal coordinate system. The x-axis and y-axis are directions parallel to the first side and the second side of the rectangle, respectively, when the module substrate is rectangular in top view, wherein the second side is orthogonal to the first side. The z-axis is the thickness direction of the module substrate. In addition, in this specification, the so-called "thickness direction" of the module substrate refers to the direction perpendicular to the main surface of the module substrate.

[0061] In addition, in this specification, the so-called "connection" includes not only the case of direct connection through a connection terminal and / or a wiring conductor, but also the case of electrical connection via other circuit elements. In addition, the so-called "connection between A and B" means connection between A and B to both A and B.

[0062] In addition, in the component arrangement of the present invention, the so-called "a top view of the module substrate" or "a top view of the main surface of the module substrate" means observing the object by orthogonally projecting it onto the xy plane from the positive side of the z-axis. In addition, the so-called "the distance between A and B when viewed from above the module substrate" means the length of the line segment connecting the representative point in the area of ​​A and the representative point in the area of ​​B projected onto the xy plane. Here, as a representative point, the center point of the area or the point of the area closest to each other can be used, but it is not limited to this.

[0063] Furthermore, the term “components arranged on a substrate” includes, in addition to the case where a component is arranged on a substrate in contact with the substrate, a case where a component is arranged above the substrate without contact with the substrate (for example, a case where a component is stacked on other components arranged on the substrate), and a case where a component is arranged partially or entirely embedded in the substrate. Furthermore, the term “components arranged on a principal surface of a substrate” includes, in addition to the case where a component is arranged on the principal surface in contact with the substrate, a case where a component is arranged above the principal surface without contact with the principal surface, and a case where a part of the component is arranged embedded in the substrate from the principal surface side. The term “A is arranged between B and C” means that at least one of the multiple line segments connecting an arbitrary point in B and an arbitrary point in C passes through A.

[0064] In the present specification, ordinal numbers such as “first” and “second” do not indicate the number or order of components unless otherwise specified, but are used to avoid confusion between components of the same kind and to distinguish between them.

[0065] (Implementation Method)

[0066] [1. Circuit structure of high-frequency module and communication device]

[0067] Reference Figure 1 The circuit configurations of the high-frequency module and the communication device according to the embodiments will be described. Figure 1 It is a circuit configuration diagram of the high-frequency module 1 and the communication device 5 according to the present embodiment.

[0068] [1-1. Circuit structure of communication device]

[0069] First, the circuit structure of the communication device 5 is described. The communication device 5 is a device used in the communication system, for example, a portable terminal such as a smart phone and a tablet computer. Figure 1 As shown, the communication device 5 includes a high-frequency module 1 , an antenna 2 , an RFIC 3 , and a BBIC 4 .

[0070] The high frequency module 1 transmits a high frequency signal between the antenna 2 and the RFIC 3. The internal structure of the high frequency module 1 will be described later.

[0071] The antenna 2 is connected to the antenna connection terminal 100 of the high-frequency module 1 , transmits a high-frequency signal output from the high-frequency module 1 , and receives a high-frequency signal from the outside and outputs the signal to the high-frequency module 1 .

[0072] RFIC3 is a signal processing circuit that processes the high-frequency signal received and transmitted by the antenna 2. Specifically, RFIC3 performs signal processing on the high-frequency reception signal input through the reception path of the high-frequency module 1 by down-conversion, etc., and outputs the reception signal generated by the signal processing to BBIC4. In addition, RFIC3 performs signal processing on the transmission signal input from BBIC4 by up-conversion, etc., and outputs the high-frequency transmission signal generated by the signal processing to the transmission path of the high-frequency module 1.

[0073] RFIC3 also has a control unit that controls switches and amplifiers included in high-frequency module 1. Part or all of the functions of RFIC3 as a control unit may be provided outside RFIC3, for example, in BBIC4 or high-frequency module 1.

[0074] BBIC 4 is a baseband signal processing circuit that performs signal processing using an intermediate frequency band lower than the high frequency signal transmitted by high frequency module 1. As the signal processed by BBIC 4, for example, an image signal for image display and / or an audio signal for communication via a speaker can be used.

[0075] In addition, in the communication device 5 according to the present embodiment, the antenna 2 and the BBIC 4 are not essential components.

[0076] [1-2. Circuit structure of high-frequency module]

[0077] Next, the circuit structure of the high frequency module 1 is described. Figure 1 As shown, the high frequency module 1 includes power amplifiers 11 and 12 , low noise amplifiers 21 and 22 , switches 51 to 53 , duplexers 61 to 63 , an antenna connection terminal 100 , high frequency input terminals 111 and 112 , and high frequency output terminals 121 and 122 .

[0078] The antenna connection terminal 100 is connected to the antenna 2 .

[0079] The high-frequency input terminals 111 and 112 are terminals for receiving high-frequency transmission signals from outside the high-frequency module 1. In the present embodiment, the high-frequency input terminal 111 is a terminal for receiving transmission signals of communication bands A and B from RFIC 3. The high-frequency input terminal 112 is a terminal for receiving transmission signals of communication band C from RFIC 3.

[0080] The high-frequency output terminals 121 and 122 are each a terminal for providing a high-frequency reception signal to the outside of the high-frequency module 1. In the present embodiment, the high-frequency output terminal 121 is a terminal for providing the reception signals of the communication frequency bands A and B to the RFIC 3. The high-frequency output terminal 122 is a terminal for providing the reception signals of the communication frequency band C to the RFIC 3.

[0081] The so-called communication frequency band refers to a frequency band pre-defined for a communication system by a standardization organization (for example, 3GPP (3rd Generation Partnership Project) and IEEE (Institute of Electrical and Electronics Engineers)).

[0082] Here, the so-called communication system means a communication system constructed using a radio access technology (RAT). As a communication system, for example, a 5GNR (5th Generation New Radio) system, an LTE (Long Term Evolution) system, and a WLAN (Wireless Local Area Network) system can be used, but it is not limited to these.

[0083] Communication band A is an example of the first communication band. Communication band B is an example of the second communication band. Communication band C is an example of the third communication band. Communication bands A to C are different communication bands. In the present embodiment, as communication bands A to C, communication bands for frequency division duplex (FDD) are used respectively. More specifically, as communication bands A to C, Band B1, Band B2, Band B3, or Band B7 for LTE, or Band n1, Band n2, Band n3, or Band n7 for 5GNR can be used respectively, but communication bands A to C are not limited to these.

[0084] Alternatively, a communication band for time division duplex (TDD) may be used as at least one of the communication bands A to C. More specifically, Band B32, Band B39, Band B40, or Band B41 for LTE, or Band n39, Band n40, or Band n41 for 5GNR may be used as at least one of the communication bands A to C.

[0085] The power amplifier 11 can amplify high frequency signals in the communication bands A and B. An input terminal of the power amplifier 11 is connected to a high frequency input terminal 111 , and an output terminal of the power amplifier 11 is connected to transmission filters 61T and 62T via a switch 52 .

[0086] The power amplifier 12 can amplify a high-frequency signal in the communication frequency band C. An input terminal of the power amplifier 12 is connected to the high-frequency input terminal 112 , and an output terminal of the power amplifier 12 is connected to the transmission filter 63T.

[0087] The structures of the power amplifiers 11 and 12 are not particularly limited. For example, the power amplifiers 11 and / or 12 may be single-stage structures or multi-stage structures. For example, the power amplifiers 11 and / or 12 may also have a plurality of amplifier elements connected in cascade. In addition, the power amplifiers 11 and / or 12 may also convert high-frequency signals into differential signals (i.e., complementary signals) and amplify them. Such power amplifiers 11 and / or 12 are sometimes referred to as differential amplifiers.

[0088] The low noise amplifier 21 can amplify high frequency signals in the communication bands A and B with low noise. The input terminal of the low noise amplifier 21 is connected to the reception filters 61R and 62R via the switch 53 , and the output terminal of the low noise amplifier 21 is connected to the high frequency output terminal 121 .

[0089] The low noise amplifier 22 can amplify, with low noise, a high frequency signal in the communication frequency band C. An input terminal of the low noise amplifier 22 is connected to the reception filter 63R, and an output terminal of the low noise amplifier 22 is connected to the high frequency output terminal 122 .

[0090] The structures of the low noise amplifiers 21 and 22 are not particularly limited. For example, the low noise amplifiers 21 and / or 22 may be either a single-stage structure or a multi-stage structure, or may be differential amplifiers.

[0091] The duplexer 61 passes a high frequency signal in the communication band A. The duplexer 61 transmits a transmission signal and a reception signal in the communication band A in an FDD manner. The duplexer 61 includes a transmission filter 61T and a reception filter 61R.

[0092] The transmission filter 61T is an example of the first filter, one end of which is connected to the antenna connection terminal 100 via the switch 51, and the other end is connected to the output terminal of the power amplifier 11. Specifically, the other end of the transmission filter 61T is connected to the output terminal of the power amplifier 11 via the switch 52. The transmission filter 61T has a passband that includes at least a portion of the communication frequency band A. Specifically, the transmission filter 61T has a passband that includes the uplink operating frequency band of the communication frequency band A. Thus, the transmission filter 61T allows the high-frequency signal of the uplink operating frequency band of the communication frequency band A to pass among the high-frequency signals amplified by the power amplifier 11.

[0093] The uplink operating frequency band refers to a part of the communication frequency band designated for uplink. In the high frequency module 1, the uplink operating frequency band refers to the transmission band.

[0094] The receiving filter 61R is an example of a second filter, one end of which is connected to the antenna connection terminal 100 via the switch 51, and the other end is connected to the input terminal of the low noise amplifier 21. Specifically, the other end of the receiving filter 61R is connected to the input terminal of the low noise amplifier 21 via the switch 53. The receiving filter 61R has a passband that includes at least a portion of the communication frequency band A. Specifically, the receiving filter 61R has a passband that includes the downlink operating frequency band of the communication frequency band A. Thus, the receiving filter 61R allows the high-frequency signal of the downlink operating frequency band of the communication frequency band A to pass among the high-frequency signals input from the antenna connection terminal 100.

[0095] The downlink operating frequency band refers to a part of a communication frequency band designated for downlink. In the high frequency module 1, the downlink operating frequency band refers to a reception band.

[0096] The duplexer 62 allows the high frequency signal of the communication band B to pass through. The duplexer 62 transmits the transmission signal and the reception signal of the communication band B in the FDD method. The duplexer 62 includes a transmission filter 62T and a reception filter 62R.

[0097] The transmission filter 62T is an example of a third filter, one end of which is connected to the antenna connection terminal 100 via the switch 51, and the other end is connected to the output terminal of the power amplifier 11. Specifically, the other end of the transmission filter 62T is connected to the output terminal of the power amplifier 11 via the switch 52. The transmission filter 62T has a passband that includes at least a portion of the communication frequency band B. Specifically, the transmission filter 62T has a passband that includes the uplink operating frequency band of the communication frequency band B. Thus, the transmission filter 62T allows the high-frequency signal of the uplink operating frequency band of the communication frequency band B to pass among the high-frequency signals amplified by the power amplifier 11.

[0098] The receiving filter 62R is an example of a third filter, one end of which is connected to the antenna connection terminal 100 via the switch 51, and the other end is connected to the input terminal of the low noise amplifier 21. Specifically, the other end of the receiving filter 62R is connected to the input terminal of the low noise amplifier 21 via the switch 53. The receiving filter 62R has a passband that includes at least a portion of the communication frequency band B. Specifically, the receiving filter 62R has a passband that includes the downlink operating frequency band of the communication frequency band B. Thus, the receiving filter 62R allows the high-frequency signal of the downlink operating frequency band of the communication frequency band B to pass among the high-frequency signals input from the antenna connection terminal 100.

[0099] The duplexer 63 allows the high frequency signal of the communication frequency band C to pass through. The duplexer 63 transmits the transmission signal and the reception signal of the communication frequency band C in the FDD method. The duplexer 63 includes a transmission filter 63T and a reception filter 63R.

[0100] The transmission filter 63T is an example of a fourth filter, one end of which is connected to the antenna connection terminal 100 via the switch 51, and the other end is connected to the output terminal of the power amplifier 12. The transmission filter 63T has a passband that includes at least a portion of the communication band C. Specifically, the transmission filter 63T has a passband that includes the uplink operating band of the communication band C. Thus, the transmission filter 63T allows the high-frequency signal of the uplink operating band of the communication band C to pass among the high-frequency signals amplified by the power amplifier 12.

[0101] The receiving filter 63R is an example of a fourth filter, one end of which is connected to the antenna connection terminal 100 via the switch 51, and the other end of which is connected to the input terminal of the low noise amplifier 22. The receiving filter 63R has a passband that includes at least a portion of the communication band C. Specifically, the receiving filter 63R has a passband that includes the downlink operating band of the communication band C. Thus, the receiving filter 63R allows the high-frequency signal of the downlink operating band of the communication band C to pass among the high-frequency signals input from the antenna connection terminal 100.

[0102] The transmission filters 61T to 63T and the reception filters 61R to 63R described above may be, for example, surface acoustic wave (SAW) filters, elastic wave filters using BAW (Bulk Acoustic Wave), LC resonance filters, and dielectric filters, but are not limited thereto.

[0103] The switch 51 is an example of a first switch and is connected to the antenna connection terminal 100. Specifically, the switch 51 is connected between the antenna connection terminal 100 and the transmission filters 61T to 63T and the reception filters 61R to 63R. The switch 51 switches (1) the connection between the antenna connection terminal 100 and the transmission filter 61T and the reception filter 61R, (2) the connection between the antenna connection terminal 100 and the transmission filter 62T and the reception filter 62R, and (3) the connection between the antenna connection terminal 100 and the transmission filter 63T and the reception filter 63R. The switch 51 is composed of a multi-connection type switch circuit that can simultaneously perform two or more of the above (1) to (3).

[0104] Specifically, the switch 51 has terminals 511 to 514. Terminal 511 is a common terminal connected to the antenna connection terminal 100. Terminal 512 is a selection terminal connected to the transmission filter 61T and the reception filter 61R. Terminal 513 is a selection terminal connected to the transmission filter 62T and the reception filter 62R. Terminal 514 is a selection terminal connected to the transmission filter 63T and the reception filter 63R. The switch 51 can connect two or more of the terminals 512 to 514 to the terminal 511 based on a control signal from the RFIC3, for example.

[0105] The switch 52 is an example of a second switch, and is connected to the output terminal of the power amplifier 11. Specifically, the switch 52 is connected between the output terminal of the power amplifier 11 and the transmission filters 61T and 62T. The switch 52 switches the connection between the power amplifier 11 and the transmission filter 61T, and the connection between the power amplifier 11 and the transmission filter 62T. Specifically, the switch 52 has terminals 521 to 523. The terminal 521 is a common terminal connected to the output terminal of the power amplifier 11. The terminal 522 is a selection terminal connected to the transmission filter 61T. The terminal 523 is a selection terminal connected to the transmission filter 62T. In such a connection structure, the switch 52 can, for example, connect either of the terminals 522 and 523 to the terminal 521 based on a control signal from the RFIC3. Thus, the connection between the power amplifier 11 and the transmission filter 61T, and the connection between the power amplifier 11 and the transmission filter 62T can be switched. The switch 52 is, for example, composed of a SPDT (Single-Pole Double-Throw) type switch circuit.

[0106] The switch 53 is connected between the input terminal of the low noise amplifier 21 and the receiving filters 61R and 62R. The switch 53 switches the connection between the low noise amplifier 21 and the receiving filter 61R, and the connection between the low noise amplifier 21 and the receiving filter 62R. Specifically, the switch 53 has terminals 531 to 533. Terminal 531 is a common terminal connected to the input terminal of the low noise amplifier 21. Terminal 532 is a selection terminal connected to the receiving filter 61R. Terminal 533 is a selection terminal connected to the receiving filter 62R. In such a connection structure, the switch 53 can, for example, connect either of the terminals 532 and 533 to the terminal 531 based on a control signal from the RFIC3. Thus, the connection between the low noise amplifier 21 and the receiving filter 61R, and the connection between the low noise amplifier 21 and the receiving filter 62R can be switched. The switch 53 is composed of, for example, an SPDT type switch circuit.

[0107] In the present embodiment, the signal of the communication band C can be transmitted simultaneously with the signal of the communication band A. That is, one of the combinations of communication bands used in carrier aggregation (CA) is the communication band A and the communication band C. For example, the transmission signal of the communication band C can be transmitted simultaneously with the transmission signal of the communication band A. That is, the transmission signal (communication band A) passing through the transmission filter 61T and the transmission signal (communication band C) passing through the transmission filter 63T can be transmitted simultaneously. In addition, for example, the reception signal of the communication band C can be transmitted simultaneously with the reception signal of the communication band A. That is, the reception signal (communication band A) passing through the reception filter 61R and the reception signal (communication band C) passing through the reception filter 63R can be transmitted simultaneously.

[0108] In addition, the signal of communication band B cannot be transmitted simultaneously with the signal of communication band A. That is, communication band A and communication band B are not included in one or more combinations of communication bands used in CA. One of the combinations not used in CA is communication band A and communication band B. As an example, the transmission signal of communication band B cannot be transmitted simultaneously with the transmission signal of communication band A. That is, the transmission signal (communication band A) passing through the transmission filter 61T and the transmission signal (communication band B) passing through the transmission filter 62T cannot be transmitted simultaneously. In addition, the reception signal of communication band B cannot be transmitted simultaneously with the reception signal of communication band A. That is, the reception signal (communication band A) passing through the reception filter 61R and the reception signal (communication band B) passing through the reception filter 62R cannot be transmitted simultaneously.

[0109] In this way, an example is described in which the transmission signal of communication band A and the transmission signal of communication band C can be transmitted simultaneously (simultaneously transmitted) and the transmission signal of communication band A and the transmission signal of communication band B cannot be transmitted simultaneously (simultaneously transmitted), but it is not limited to this. For example, it is also possible that the transmission signal of communication band B and the transmission signal of communication band C can be transmitted simultaneously (simultaneously transmitted). Alternatively, it is also possible that the reception signal of communication band A or B and the transmission signal of communication band C can be transmitted simultaneously (simultaneously transmitted and received). In addition, it is also possible that the reception signal of communication band A or B and the reception signal of communication band C can be transmitted simultaneously (simultaneously received).

[0110] In addition, it is also possible that the transmission signal or reception signal of the communication frequency band A and the transmission signal or reception signal of the communication frequency band B can be transmitted simultaneously. For example, when the transmission signal of the communication frequency band A and the transmission signal of the communication frequency band B can be transmitted simultaneously, the switch 52 is composed of a multi-connection type switch in which the terminal 521 can be connected to both the terminals 522 and 523 at the same time. In addition, when the reception signal of the communication frequency band A and the reception signal of the communication frequency band B can be transmitted simultaneously, the switch 53 is composed of a multi-connection type switch in which the terminal 531 can be connected to both the terminals 532 and 533 at the same time. In addition, it is also possible to transmit signals of more than three communication frequency bands simultaneously.

[0111] Furthermore, the high-frequency module according to the present invention only needs to include at least one power amplifier, at least one low-noise amplifier, and at least one switch connected to the antenna connection terminal as a circuit configuration, and may not include other circuit elements.

[0112] [2. Component configuration of high-frequency module]

[0113] Next, refer to Figure 2 to Figure 5 The component arrangement of the high-frequency module 1 configured as above will be specifically described.

[0114] Figure 2 is a top view of the high frequency module 1 according to the first embodiment. Specifically, Figure 2 FIG. 1 shows a diagram of a main surface 91 a of a module substrate 91 viewed from the positive z-axis side. Figure 3 to Figure 5 Each of them is a cross-sectional view of the high-frequency module 1 according to the first embodiment. Figure 3 The cross section of the high frequency module 1 is Figure 2 Cross section at line III-III. Figure 4 The cross section of the high frequency module 1 is Figure 2 Cross section at line IV-IV. Figure 5 The cross section of the high frequency module 1 is Figure 2 The cross section at the V-V line.

[0115] like Figure 2 as well as Figure 3 As shown, the high frequency module 1 includes Figure 1 In addition to the electronic components of the circuit elements shown in FIG. 1 , the module substrate 91, the resin member 92, the conductive member 93, the shielding film 95, and the plurality of electrode terminals 150 are also provided. Figure 2 In the figure, the upper part of the resin member 92 and the shielding film 95 is omitted. In order to make the shapes of the side wall parts of the conductive member 93 and the shielding film 95 easier to understand, they are shown with grids.

[0116] The module substrate 91 has main surfaces 91a and 91b facing each other. In the present embodiment, the module substrate 91 is rectangular in plan view, but is not limited thereto. Components constituting the circuit of the high-frequency module 1 are arranged on the main surfaces 91a and 91b. As the module substrate 91, for example, a low-temperature co-fired ceramic (LTCC: Low Temperature Co-fired Ceramics) substrate having a stacked structure of a plurality of dielectric layers, a high-temperature co-fired ceramic (HTCC: High Temperature Co-fired Ceramics) substrate, a component-embedded substrate, a substrate having a redistribution layer (RDL: Redistribution Layer), or a printed substrate can be used, but is not limited thereto.

[0117] The main surface 91a of the module substrate 91 is an example of a first main surface, and is sometimes referred to as an upper surface or a surface. Figure 2 As shown in FIG. 1 , power amplifiers 11 and 12, low noise amplifiers 21 and 22, switches 51 to 53, transmission filters 61T to 63T, and reception filters 61R to 63R are arranged on the main surface 91a. That is, all circuit components constituting the high frequency module 1 (except for the external connection terminals) are arranged on the main surface 91a. Figure 3 As shown, the components on the main surface 91 a are sealed by a resin member 92 .

[0118] The main surface 91b of the module substrate 91 is an example of a second main surface, and is sometimes referred to as a lower surface or a back surface. Figure 3 As shown, a plurality of electrode terminals 150 are arranged on the main surface 91 b.

[0119] The plurality of electrode terminals 150 are an example of a plurality of external connection terminals. Figure 1The antenna connection terminal 100, high frequency input terminals 111 and 112, and high frequency output terminals 121 and 122 shown in the figure also include a ground terminal. The plurality of electrode terminals 150 are each connected to an input / output terminal and / or a ground electrode etc. arranged on the mother substrate on the negative side of the z-axis of the high frequency module 1. As the plurality of electrode terminals 150, pad electrodes can be used, but are not limited thereto.

[0120] The resin member 92 is disposed on the main surface 91a of the module substrate 91, and covers the components disposed on the main surface 91a and the main surface 91a. The resin member 92 has a function of ensuring reliability such as mechanical strength and moisture resistance of each component.

[0121] The conductive member 93 divides the main surface 91a of the module substrate 91 into three regions R1 to R3. The size and shape of the regions R1 to R3 are not particularly limited. An example of arrangement of components in each region R1 to R3 will be described later.

[0122] The conductive member 93 is set to a ground potential. For example, the conductive member 93 is connected to a ground conductor (not shown) in the module substrate 91 via a via conductor (not shown), thereby being set to a ground potential. In addition, the conductive member 93 is also set to a ground potential by being connected to the shielding film 95. The conductive member 93 protrudes from the main surface 91a. The conductive member 93 suppresses electromagnetic coupling between the components arranged in each of the divided regions R1 to R3. As a result, it is possible to suppress the influx of noise into the high-frequency signals transmitted in each component.

[0123] like Figure 2 as well as Figure 3 As shown in FIG. 1 , the conductive member 93 includes a first partition wall 93 a and a second partition wall 93 b. The first partition wall 93 a and the second partition wall 93 b are each formed using a metal material.

[0124] The first partition wall 93a is a wall that divides the region R1 and the region R2. Figure 2 As shown in FIG. 1 , the first partition wall 93a is a long flat plate extending linearly along the y-axis direction, and the side end surfaces at both ends in the y-axis direction are in contact with the shielding film 95. Figure 3 As shown, the first partition wall 93a is vertically erected relative to the main surface 91a, and the upper end surface is in contact with the shielding film 95. Specifically, the upper end surface and the side end surface of the first partition wall 93a are in contact with the shielding film 95 in their entirety, so that no gap is formed between the first partition wall 93a and the shielding film 95. Thus, the region R1 can be completely separated from the regions R2 and R3.

[0125] The second partition wall 93b is a wall that divides the region R2 and the region R3. Figure 2As shown in FIG. 1 , the second partition wall 93b is a plate bent into an L-shape and extending in the y-axis direction and the x-axis direction. The second partition wall 93b is in contact with the shielding film 95 at the side end surface. Figure 3 As shown, the second partition wall 93b is vertically erected relative to the main surface 91a, and the upper end surface is in contact with the shielding film 95. Specifically, the upper end surface and the side end surface of the second partition wall 93b are in contact with the shielding film 95 in their entirety, so that no gap is formed between the second partition wall 93b and the shielding film 95. Thus, the region R3 can be completely separated from the regions R1 and R2.

[0126] The first partition wall 93a and the second partition wall 93b are metal bodies grown by plating, for example, by a plating method. The first partition wall 93a and the second partition wall 93b can be formed by, for example, the following steps.

[0127] First, a recess is formed in a predetermined area on the main surface 91a of the module substrate 91 by using a photosensitive resist or the like, thereby exposing a seed layer that serves as a base for plating. Next, a metal such as gold or copper is grown on the exposed seed layer by electrolytic plating, thereby simultaneously forming the first partition wall 93a and the second partition wall 93b.

[0128] The shielding film 95 is a metal thin film formed by sputtering, for example, and is formed to cover the upper and side surfaces of the resin member 92 and the side surfaces of the module substrate 91. The shielding film 95 is set to a ground potential to suppress the intrusion of external noise into the circuit components constituting the high-frequency module 1.

[0129] In this embodiment, if Figure 2 As shown, the main surface 91 a of the module substrate 91 is divided into three regions R1 to R3 by the conductive member 93 .

[0130] Region R1 is an example of the first region, and power amplifiers 11 and 12 are arranged. In addition, switch 52 connected to the output terminal of power amplifier 11 is arranged in region R1. Region R1 is a region surrounded by first partition walls 93a of conductive member 93 and shielding film 95.

[0131] Region R2 is an example of the second region, and a switch 51 connected to the antenna connection terminal 100 is arranged. Transmit filters 61T to 63T and receive filters 61R to 63R are arranged in region R2. Region R2 is a region surrounded by the first partition wall 93a and the second partition wall 93b of the conductive member 93 and the shielding film 95.

[0132] In a plan view of the main surface 91a, the transmission filters 61T and 63T are arranged in the region R2 between the switch 51 and the power amplifier 11. For example, the transmission filters 61T and 63T are arranged along one side (the first side) of the switch 51 whose shape in a plan view is a rectangle. The first side is the side closest to the power amplifier 11 among the four sides of the switch 51.

[0133] As described above, the transmission filters 61T and 63T correspond to the combination of communication frequency bands used in CA. Figure 2 In the figure, the dotted frame represents a filter that uses the communication frequency band used in CA as a passband. In the present embodiment, the transmission filters 61T and 63T used in CA are arranged at a position closer to the switch 51 than the transmission filter 62T not used in CA. Specifically, in a top view, the shortest distance between the transmission filter 61T and the switch 51, and the shortest distance between the transmission filter 63T and the switch 51 are both shorter than the shortest distance between the transmission filter 62T and the switch 51. In addition, the so-called "shortest distance between A and B" is the shortest distance among the distances connecting any point in A and any point in B.

[0134] The transmission filter 61T has a plurality of connection terminals connected to the main surface 91a. The plurality of connection terminals are in contact with, for example, wiring or electrode pads provided on the main surface 91a. Figure 4 As shown in FIG. 1 , the plurality of connection terminals include an input terminal 61Ta as an example of a first terminal, and the first terminal is one end of the transmission filter 61T. Figure 4 Although not shown, the plurality of connection terminals include an output terminal as an example of a second terminal, etc.

[0135] The input terminal 61Ta is connected to the output terminal of the power amplifier 11 via the switch 52. The high-frequency signal amplified by the power amplifier 11 is input to the input terminal 61Ta. In the present embodiment, the input terminal 61Ta is adjacent to the first partition wall 93a. In addition, in this specification, the so-called "terminal A is adjacent to B" means that there is no other terminal between "terminal A" and "B". Specifically, the distance between the first partition wall 93a and the input terminal 61Ta is shorter than the distance between the first partition wall 93a and the output terminal of the transmission filter 61T. The first partition wall 93a is the partition wall closest to the transmission filter 61T among the multiple partition walls constituting the conductive member 93.

[0136] More specifically, the distance between the first partition wall 93a and the input terminal 61Ta is the shortest among the distances between the first partition wall 93a and the plurality of connection terminals of the transmission filter 61T. For example, the input terminal 61Ta is located closest to the first partition wall 93a among all the connection terminals of the transmission filter 61T. In addition, among all the connection terminals of the transmission filter 61T, a connection terminal having the same distance to the first partition wall 93a as the input terminal 61Ta may be included.

[0137] In this way, by placing the input terminal 61Ta of the transmission filter 61T adjacent to the first partition wall 93a, the heat generated in the transmission filter 61T can be dissipated to the shielding film 95 and the ground conductor in the module substrate 91 via the first partition wall 93a, thereby improving the heat dissipation. In particular, when the transmission filter 61T is composed of a multi-stage SAW filter, a large amount of heat generated in the first-stage IDT electrode can be efficiently dissipated, thereby achieving a high heat dissipation effect.

[0138] In addition, if Figure 5 As shown, the input terminal 62Ta of the transmission filter 62T is also the same. Specifically, it is adjacent to the first partition wall 93a. Specifically, the distance between the first partition wall 93a and the input terminal 62Ta is shorter than the distance between the first partition wall 93a and the output terminal of the transmission filter 62T. The first partition wall 93a is the partition wall closest to the transmission filter 62T among the multiple partition walls constituting the conductive member 93. More specifically, the distance between the first partition wall 93a and the input terminal 62Ta is the shortest among the distances between the first partition wall 93a and the multiple connection terminals of the transmission filter 62T.

[0139] Although not shown in the figure, the input terminal of the transmission filter 63T may be adjacent to the first partition wall 93a in the same manner. Thus, the heat dissipation effect can be improved in the transmission filters 62T and 63T as well.

[0140] When the transmission filter 62T is surrounded by a plurality of partition walls (the first partition wall 93a and the second partition wall 93b), the transmission filter 62T is arranged, for example, at a position closer to the partition wall adjacent to the input terminal 62Ta than the center of the range surrounded by the plurality of partition walls. Thus, the input terminal 62Ta is adjacent to one of the plurality of partition walls, thereby improving the heat dissipation effect.

[0141] In this embodiment, if Figure 4As shown in FIG. 1 , the transmission filter 61T may also be in contact with the shielding film 95. Specifically, the top surface of the transmission filter 61T is not covered by the resin member 92 and is exposed, and the shielding film 95 is in contact with and covers the exposed top surface. As a result, the heat generated in the transmission filter 61T can be directly transferred to the shielding film 95, so that the heat dissipation effect can be further improved. In addition, the so-called top surface of the component is the surface on the opposite side of the main surface side of the module substrate 91, and is the surface on the positive side of the z-axis in each figure.

[0142] In addition, similarly, the top surfaces of the transmission filters 62T and 63T may be in contact with the shielding film 95. Thus, the heat dissipation effect of the transmission filters 62T and 63T can be improved.

[0143] In a plan view of the main surface 91a, the reception filters 61R and 63R are arranged between the switch 51 and the low noise amplifier 21 in the region R2. For example, the reception filters 61R and 63R are arranged along the other side (the second side) of the switch 51 whose shape in a plan view is a rectangle. The second side is the side closest to the low noise amplifier 21 among the four sides of the switch 51.

[0144] As described above, the reception filters 61R and 63R correspond to the combination of communication frequency bands used in CA, respectively. In the present embodiment, the reception filters 61R and 63R used in CA are arranged closer to the switch 51 than the reception filter 62R not used in CA. Specifically, in a plan view, the shortest distance between the reception filter 61R and the switch 51, and the shortest distance between the reception filter 63R and the switch 51 are both shorter than the shortest distance between the reception filter 62R and the switch 51.

[0145] like Figure 2 As shown, the transmission filter 62T not used in CA may not be arranged between the power amplifier 11 and the switch 51. The reception filter 62R not used in CA may not be arranged between the low noise amplifier 21 and the switch 51.

[0146] Region R3 is an example of the third region, and low noise amplifiers 21 and 22 are arranged. In addition, switch 53 connected to the input terminal of low noise amplifier 21 is arranged in region R3. Region R3 is a region surrounded by second partition wall 93b of conductive member 93 and shielding film 95.

[0147] In this embodiment, if Figure 2As shown, the low noise amplifiers 21 and 22 and the switch 53 are included in an electronic component 20. The electronic component 20 is, for example, a semiconductor integrated circuit. The semiconductor integrated circuit is, for example, composed of CMOS (Complementary Metal Oxide Semiconductor), and specifically, can be constructed by SOI (Silicon on Insulator) process. Thus, the semiconductor integrated circuit can be manufactured inexpensively. In addition, the semiconductor integrated circuit can also be composed of at least one of GaAs, SiGe and GaN. Thus, a low noise amplifier with high-quality amplification performance and noise performance can be realized.

[0148] In addition, if Figure 2 As shown, the main surface 91a can be virtually divided into four regions (quadrants) of equal size by two imaginary straight lines VL1 and VL2. The straight lines VL1 and VL2 are respectively parallel to two sides of the main surface 91a, which is a rectangular shape when viewed from above. In addition, the intersection of the straight lines VL1 and VL2 coincides with the center of the main surface 91a.

[0149] The four regions (quadrants) divided hypothetically are set as the 1st to 4th quadrants in the order of upper right, upper left, lower left, and lower right. The 1st to 4th quadrants are all regions of equal size. Figure 2 In the example shown, a switch 51 is arranged in the first quadrant. A power amplifier 11 and a switch 52 are arranged in the second quadrant. A power amplifier 12 is arranged in the third quadrant. Low noise amplifiers 21 and 22 and a switch 53 are arranged in the fourth quadrant.

[0150] In addition, the transmission filters 61T to 63T and the reception filter 62R are arranged on the imaginary straight line VL2. The reception filters 61R and 63R are arranged on the imaginary straight line VL1. At this time, the transmission filter 62T and the reception filter 62R that are not used for CA are arranged in the same lower half area as the low noise amplifiers 21 and 22 (specifically, the area composed of the third quadrant and the fourth quadrant). The transmission filters 61T and 63T used for CA are arranged in the same upper half area as the switch 51 (specifically, the area composed of the first quadrant and the second quadrant).

[0151] in addition, Figure 2The configuration example shown is only an example, and the configuration of each component may be changed appropriately. For example, the power amplifier 12 may be configured in the same second quadrant as the power amplifier 11. In addition, at least one of the transmission filters 61T to 63T and the reception filters 61R to 63R may not be configured on the straight lines VL1 and VL2, but may be configured in any one of the first to fourth quadrants.

[0152] [3. Effects, etc.]

[0153] As described above, the high-frequency module 1 involved in this embodiment includes: a module substrate 91, having a main surface 91a; a conductive member 93, which divides the main surface 91a into regions R1, R2 and R3 when viewed from above the main surface 91a, and is set to a ground potential; a switch 51, which is arranged in the region R2 and connected to the antenna connection terminal 100; a power amplifier 11, which is arranged in the region R1 and connected to the antenna connection terminal 100 via the switch 51; and a low-noise amplifier 21, which is arranged in the region R3 and connected to the antenna connection terminal 100 via the switch 51.

[0154] Thus, the power amplifier 11, the low noise amplifier 21, and the switch 51 (antenna switch) are arranged in different regions, and electromagnetic coupling between them can be suppressed by the conductive member 93. Therefore, inflow of noise into the high frequency signal processed by each element can be suppressed.

[0155] In addition, for example, the high frequency module 1 further includes: a transmission filter 61T having a passband including at least a portion of the communication frequency band A, one end of which is connected to the antenna connection terminal 100 via the switch 51, and the other end of which is connected to the output terminal of the power amplifier 11. In a plan view, the transmission filter 61T is arranged between the switch 51 and the power amplifier 11 in the region R2.

[0156] Thus, the wiring length from the power amplifier 11 to the switch 51 via the transmission filter 61T can be shortened. In addition, by configuring the switch 51 and the transmission filter 61T in the same region R2, the wiring length of the switch 51 and the transmission filter 61T can be further shortened. For example, in the case where the transmission filter 61T and the reception filter 61R together constitute the duplexer 61, both the transmission signal and the reception signal are transmitted between the switch 51 and the transmission filter 61T. Therefore, the wiring length between the elements that transmit the transmission signal and the reception signal can be shortened, so the influence of the parasitic capacitance of these wirings can be suppressed, and the degradation of the loss characteristics can be suppressed. In addition, it is possible to suppress the electric field coupling, magnetic field coupling or electromagnetic field coupling of these wirings with circuit components or other wirings, so that the degradation of the isolation characteristics between the transmitter and the receiver can be suppressed. In this way, according to the high-frequency module 1 involved in this embodiment, the influx of noise into the high-frequency signal can be suppressed, and the electrical characteristics can be improved.

[0157] In addition, for example, the transmission filter 61T has a plurality of connection terminals connected to the main surface 91a. The plurality of connection terminals include an input terminal 61Ta and other terminals. In a plan view, the distance between the conductive member 93 and the input terminal 61Ta is shorter than the distance between the conductive member 93 and the other terminals. In addition, for example, in a plan view, the distance between the conductive member 93 and the input terminal 61Ta may be the shortest among the distances between the conductive member 93 and the plurality of connection terminals of the transmission filter 61T.

[0158] As described above, since the input terminal 61Ta of the transmission filter 61T is adjacent to the conductive member 93 , heat generated in the transmission filter 61T can be dissipated to the shielding film 95 and the ground conductor in the module substrate 91 via the conductive member 93 , thereby improving heat dissipation.

[0159] In addition, for example, the high frequency module 1 further includes: a receiving filter 61R having a passband including at least a portion of the communication frequency band A, one end of which is connected to the antenna connection terminal 100 via the switch 51, and the other end of which is connected to the input terminal of the low noise amplifier 21. In a plan view, the receiving filter 61R is arranged between the switch 51 and the low noise amplifier 21 in the region R2.

[0160] Thus, the wiring length from the switch 51 to the low noise amplifier 21 via the reception filter 61R can be shortened. In addition, by arranging the switch 51 and the reception filter 61R in the same region R2, the distance between the switch 51 and the reception filter 61R can be further shortened. Thus, the influence of parasitic capacitance and parasitic inductance generated in the wiring can be suppressed, so that the inflow of noise into the high-frequency signal can be suppressed, and the electrical characteristics of the high-frequency module 1 can be improved.

[0161] In addition, for example, the high-frequency module 1 further includes: a transmission filter 62T or a reception filter 62R, which has a passband including at least a part of a communication band B different from the communication band A, and one end of which is connected to the antenna connection terminal 100 via the switch 51; and a transmission filter 63T or a reception filter 63R, which has a passband including at least a part of a communication band C different from the communication bands A and B, and one end of which is connected to the antenna connection terminal 100 via the switch 51. The signal of the communication band B cannot be transmitted simultaneously with the signal of the communication band A. The signal of the communication band C can be transmitted simultaneously with the signal of the communication band A. In a plan view, the transmission filter 63T (or the reception filter 63R) is arranged in a position in the region R2 where the distance between the transmission filter 63T (or the reception filter 63R) and the switch 51 is shorter than the distance between the transmission filter 62T (or the reception filter 62R) and the switch 51.

[0162] Thus, the filters used for CA (e.g., the transmission filters 61T and 63T and the reception filters 61R and 63R) are arranged closer to the switch 51 than the filters not used for CA (e.g., the transmission filter 62T and the reception filter 62R), so that the wiring length between the filters used for CA and the switch 51 can be shortened. Therefore, it is possible to suppress the influx of noise into the high-frequency signal of the communication frequency band used for CA.

[0163] In addition, for example, the high frequency module 1 further includes a switch 52 connected to the output terminal of the power amplifier 11. The transmission filter 62T is connected to the output terminal of the power amplifier 11 via the switch 52. The switch 52 is arranged in the region R1.

[0164] Thus, the switch 52 and the power amplifiers 11 and 12 for transmitting signals are arranged in the same region R1 and separated from the region R3 where the low noise amplifiers 21 and 22 are arranged. Therefore, the isolation characteristics between transmission and reception can be improved, and the influx of noise into high frequency signals can be suppressed.

[0165] For example, when the main surface 91a is virtually divided into two regions of equal size by a straight line VL1, the power amplifier 11, the switch 51 and the transmission filter 63T are arranged in one of the two regions, and the low noise amplifier 21 and the transmission filter 62T are arranged in the other of the two regions.

[0166] This can shorten the wiring length between the filter used for CA and the switch 51. Therefore, it is possible to suppress the influx of noise into the high-frequency signal in the communication frequency band used for CA.

[0167] In addition, for example, when the main surface 91a is virtually divided into four regions of equal size by two straight lines VL1 and VL2, the power amplifier 11 and the switch 51 are respectively arranged in two adjacent regions, and the low-noise amplifier 21 is arranged in a region located at the diagonal position of the region where the power amplifier 11 is arranged.

[0168] As a result, the power amplifier 11 and the low-noise amplifier 21 can be separated relatively far from each other, so that the isolation characteristics between transmission and reception can be improved, and the influx of noise into high-frequency signals can be suppressed.

[0169] For example, the high frequency module 1 further includes a resin member 92 covering the power amplifier 11, the low noise amplifier 21, the switch 51, and the main surface 91a, and a shielding film 95 covering the surface of the resin member 92. The conductive member 93 is in contact with the shielding film 95.

[0170] This can improve the shielding performance between the regions by the conductive member 93 , thereby suppressing the inflow of noise.

[0171] Furthermore, the communication device 5 according to the present embodiment includes: an RFIC 3 that processes a high-frequency signal; and a high-frequency module 1 that transmits the high-frequency signal processed by the RFIC 3 .

[0172] This can provide the same effects as those of the high-frequency module 1 described above.

[0173] (other)

[0174] As mentioned above, the high-frequency module and the communication device according to the present invention have been described based on the above-mentioned embodiments, but the present invention is not limited to the above-mentioned embodiments.

[0175] For example, in the circuit structures of the high-frequency modules and communication devices involved in the above-mentioned embodiments, other circuit elements and wirings may be inserted between the paths connecting the circuit elements and signal paths disclosed in the drawings. For example, an impedance matching circuit may be inserted between at least one of the duplexer 61 and the switch 51, between the duplexer 62 and the switch 51, and between the duplexer 63 and the switch 51. In addition, the impedance matching circuit may be inserted between the power amplifier 11 and the switch 52, between the low-noise amplifier 21 and the switch 53, between the power amplifier 12 and the transmission filter 63T, and between the low-noise amplifier 22 and the reception filter 63R. The impedance matching circuit may include, for example, an inductor and / or a capacitor.

[0176] Furthermore, for example, the high-frequency module 1 may include a plurality of antenna connection terminals, and the communication device 5 may include a plurality of antennas.

[0177] Furthermore, for example, at least one of the transmission filters 61T to 63T and the reception filters 61R to 63R may be arranged in a region different from the region R2 where the switch 51 is arranged. For example, at least one of the transmission filters 61T to 63T may be arranged in the region R1 where the power amplifier 11 is arranged. At least one of the reception filters 61R to 63R may be arranged in the region R3 where the low noise amplifier 21 is arranged.

[0178] In addition, for example, in the above-mentioned embodiment, an example is shown in which the main surface 91a of the module substrate 91 is divided into three regions, but the present invention is not limited thereto. For example, the main surface 91a may be divided into four or more regions. For example, at least one of the switches 52 and 53, the transmission filters 61T to 63T, and the reception filters 61R to 63R may be arranged in a region different from the regions R1 to R3.

[0179] In addition, for example, the shape and size of each of the first wall 93a and the second wall 93b are not particularly limited. For example, the first wall 93a may extend in a direction inclined relative to the y-axis direction or in a direction perpendicular to the y-axis direction, or may meander along the y-axis direction. In addition, the first wall 93a may be L-shaped in a top view in the same manner as the second wall 93b. The second wall 93b may extend in a straight line along the y-axis direction, or may extend in a direction inclined relative to the y-axis direction or in a direction perpendicular to the y-axis direction. In addition, the first wall 93a may be an annular wall body that at least surrounds the power amplifier 11. The second wall 93b may be an annular wall body that at least surrounds the low noise amplifier 21.

[0180] In addition, the first partition wall 93a and the second partition wall 93b may not be in contact with the shielding film 95. In addition, the first partition wall 93a and the second partition wall 93b may each be provided with one or more through holes or one or more slits that penetrate the wall body. The shape of the slit may be, for example, a shape of a groove cut from the upper end of the wall body toward the bottom, or a shape of a groove cut from the lower end of the wall body toward the top. Alternatively, the shape of the slit may also have a shape of a groove cut from the side end face of the wall body (the contact face with the shielding film 95) in a direction parallel to the main surface 91a or in a direction inclined relative to the main surface 91a.

[0181] In addition, the first partition wall 93a and the second partition wall 93b may be respectively composed of a plurality of separate partial wall bodies. Figure 6 to Figure 11 Modification examples of each of the first partition walls 93 a and the second partition walls 93 b will be described. Figure 6 to Figure 11 These are plan views of high frequency modules according to Modifications 1 to 6. Except for the plan view shapes of the first partition walls 93 a and the second partition walls 93 b , these are the same as those of the above-described embodiment.

[0182] For example, something like Figure 6 As in the high frequency module 1A of FIG. 1 , the first partition wall 93a and the second partition wall 93b may each be composed of a plurality of separate wall portions. The plan view shape of each of the first partition wall 93a and the second partition wall 93b may be a dotted line or a dashed line of a given line width.

[0183] In addition, when the partition wall is composed of a plurality of partial walls, or when the partition wall does not extend to the side portion of the shielding film 95, each area can be virtually partitioned by an imaginary straight line extending from the end of the partition wall or the partial wall body in a given direction. As an example, the imaginary straight line is an extension line of the partition wall or the partial wall body.

[0184] exist Figure 6In the high-frequency module 1A shown, the first partition wall 93a includes two partial walls 193a and 193b. The two partial walls 193a and 193b have a long strip shape extending in the y-axis direction and are arranged in a straight line along the y-axis direction. The partial walls 193a and 193b are not in contact with the side surface of the shielding film 95, and a gap is provided.

[0185] The second partition wall 93b includes two partial walls 193c and 193d. The partial wall 193c has a long strip shape extending along the y-axis direction. The partial wall 193d has a long strip shape extending along the x-axis direction. The partial walls 193c and 193d are arranged separately and not in contact with each other. In addition, the partial walls 193c and 193d are not in contact with the side portions of the shielding film 95, and a gap is provided.

[0186] Even in such a case, the regions R1 to R3 can be partitioned as in the embodiment. The regions R1 to R3 may not be completely separated from each other, and may be partially connected through gaps between the partition walls.

[0187] In addition, like Figure 7 As in the high-frequency module 1B shown in FIG. 1 , the first partition wall 93a may not include the partial wall body 193b but may include only the partial wall body 193a. The high-frequency module 1B corresponds to Figure 6 The high-frequency module 1A has a structure in which the partial wall 193 b is removed. In this case, the region R1 and the region R2 can be divided by an extension line (extending in the y-axis direction) of the partial wall 193 a.

[0188] In addition, like Figure 8 As in the high-frequency module 1C shown in FIG. 1 , the second partition wall 93b may not include the partial wall body 193d but may include only the partial wall body 193c. The high-frequency module 1C corresponds to Figure 6 In this case, the region R2 and the region R3 can be divided by the extension line of the partial wall 193c and the imaginary line extending from the end of the partial wall 193c in the y-axis direction in the x-axis direction.

[0189] In addition, like Fig. 9 As in the high-frequency module 1D shown in FIG. 1 , the first partition wall 93a may have only the partial wall 193a instead of the partial wall 193b. The second partition wall 93b may have only the partial wall 193c instead of the partial wall 193d. The high-frequency module 1D is equivalent to Figure 6 The high-frequency module 1A has a structure in which part of the walls 193b and 193d are removed.

[0190] In addition, like Fig.10As in the high-frequency module 1E shown in FIG. 1 , the second partition wall 93b may not include the partial wall body 193c but may include only the partial wall body 193d. The high-frequency module 1E corresponds to Figure 6 The high-frequency module 1A has a structure in which part of the wall 193c is removed.

[0191] In addition, like Fig.11 As in the high-frequency module 1F shown in FIG. 1 , the first partition wall 93a may have only the partial wall 193a instead of the partial wall 193b. The second partition wall 93b may have only the partial wall 193d instead of the partial wall 193c. The high-frequency module 1F is equivalent to Figure 6 The high-frequency module 1A has a structure in which part of the walls 193b and 193c are removed.

[0192] Even in these cases, Figure 7 as well as Figure 8 In the same manner as in the case of , the regions R1 to R3 can be divided. In the second modification, the fourth modification, or the sixth modification, a partial wall 193b may be provided instead of the partial wall 193a.

[0193] In addition, the first partition wall 93a and the second partition wall 93b can be formed by applying a metal paste and solidifying the applied metal paste. In addition, the first partition wall 93a and the second partition wall 93b can also be formed by filling a metal by sputtering after the resin member 92 forms a gap equivalent to the partition wall. Alternatively, the first partition wall 93a and the second partition wall 93b can also be formed by fixing a metal plate-shaped member to the main surface 91a by solder.

[0194] In addition, for example, in the above-mentioned embodiment, an example is shown in which all the components constituting the circuit of the high-frequency module 1 are mounted on the main surface 91a of the module substrate 91, that is, an example in which the module substrate 91 is mounted on one side, but it is not limited to this. For example, components may be mounted on both sides of the module substrate 91. For example, one of the switches 52 and 53 may also be mounted on the main surface 91b of the module substrate 91. In the case where the components are mounted on the main surface 91b, a resin member covering the components may also be provided. In this case, the electrode terminal 150 may also be a columnar electrode that passes through the resin member. Alternatively, the electrode terminal 150 may also be a bump electrode. In the case where the high-frequency module 1 has an impedance matching circuit, the impedance matching circuit may be configured on the main surface 91a or on the main surface 91b.

[0195] In addition, when the module substrate 91 is mounted on one side, the main surface used for the single-sided mounting may be the main surface 91b of the module substrate 91. In other words, the main surface 91b may be divided into three or more regions by the conductive member 93, and the power amplifier 11, the switch 51, and the low-noise amplifier 21 may be arranged in each region.

[0196] In addition, the present invention also includes various modifications that can be conceived by those skilled in the art to the embodiments and embodiments achieved by arbitrarily combining components and functions in the embodiments without departing from the gist of the present invention.

[0197] Industrial Applicability

[0198] The present invention can be used as a high-frequency module disposed at the front end of communication equipment such as a mobile phone.

Claims

1. A high frequency module, comprising: Power amplifier; Low noise amplifier; a first switch connected to the power amplifier and the low noise amplifier; a module substrate, on the main surface of which the power amplifier, the low noise amplifier and the first switch are arranged; a resin member covering at least a portion of the main surface and at least a portion of the wall; a shielding member disposed on the resin member; and The wall body is set to a ground potential, has conductivity, extends in a direction perpendicular to the main surface and contacts the shielding member. In a plan view of the module substrate, the wall body is arranged between the power amplifier and the first switch, or between the power amplifier and the low-noise amplifier, or between the low-noise amplifier and the first switch.

2. The high frequency module according to claim 1, wherein: In a plan view of the module substrate, the wall body is arranged between the power amplifier and the first switch, and between the power amplifier and the low-noise amplifier.

3. The high frequency module according to claim 2, wherein: The resin member covers at least a portion of the power amplifier.

4. The high frequency module according to claim 1, wherein: In a plan view of the module substrate, the wall body is arranged between the low-noise amplifier and the first switch, and between the low-noise amplifier and the power amplifier.

5. The high frequency module according to claim 1, wherein: In a plan view of the module substrate, the wall body is arranged between the power amplifier and the first switch, and is arranged between the low-noise amplifier and the first switch.

6. The high frequency module according to claim 1, wherein: In a plan view of the module substrate, the wall body is disposed between the power amplifier and the first switch, between the power amplifier and the low-noise amplifier, and between the low-noise amplifier and the first switch.

7. The high frequency module according to claim 1, wherein: When the module substrate is viewed from above, the wall body has an L-shape in which the first portion and the second portion are perpendicular to each other.

8. The high frequency module according to claim 7, wherein: In a plan view of the module substrate, the first portion is arranged between the low-noise amplifier and the power amplifier, and the second portion is arranged between the low-noise amplifier and the first switch.

9. The high frequency module according to claim 1, wherein: The wall body comprises a first wall body and a second wall body, When the module substrate is viewed from above, the first wall has a portion extending along a first direction on the main surface. In a plan view of the module substrate, the second wall body has a portion extending along a second direction on the main surface.

10. The high frequency module according to claim 9, wherein: The first direction and the second direction are orthogonal to each other.

11. The high frequency module according to claim 10, wherein: In a plan view of the module substrate, the first wall is arranged between the low-noise amplifier and the power amplifier, and the second wall is arranged between the low-noise amplifier and the first switch.

12. The high frequency module according to claim 9, wherein: When the module substrate is viewed from above, the first direction overlaps with the second wall. When the module substrate is viewed in plan, the second direction overlaps with the first wall.

13. The high frequency module according to claim 12, wherein: In a plan view of the module substrate, the first wall is arranged between the power amplifier and the first switch, and the second wall is arranged between the power amplifier and the low-noise amplifier.

14. The high frequency module according to claim 9, wherein: In a plan view of the module substrate, the first wall is arranged between the power amplifier and the first switch, and between the power amplifier and the low noise amplifier. In a plan view of the module substrate, the second wall is arranged between the low-noise amplifier and the first switch.

15. The high frequency module according to claim 14, wherein: In a plan view of the module substrate, the first wall and the second wall are arranged between the power amplifier and the low-noise amplifier.

16. The high frequency module according to claim 9, wherein: In a plan view of the module substrate, the first wall is disposed between the low noise amplifier and the first switch, and between the low noise amplifier and the power amplifier. In a plan view of the module substrate, the second wall is arranged between the power amplifier and the first switch.

17. The high frequency module according to claim 9, wherein: The wall body also has a third wall body, When the module substrate is viewed in plan, the third wall has a portion extending along a third direction on the main surface.

18. The high frequency module according to claim 17, wherein: In a plan view of the module substrate, the first wall is arranged between the power amplifier and the first switch. In a plan view of the module substrate, the second wall is arranged between the power amplifier and the low noise amplifier. In a plan view of the module substrate, the third wall is arranged between the low-noise amplifier and the first switch.

19. The high frequency module according to any one of claims 9 to 18, wherein: The first wall body is provided with a through hole or a slit penetrating the first wall body.

20. The high frequency module according to any one of claims 9 to 18, wherein: The second wall body is provided with a through hole or a slit penetrating the second wall body.

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