Miniature light emitting diode device, manufacturing method and display device

Abstract

The invention provides a miniature light-emitting diode device, a manufacturing method and a display device, the miniature light-emitting diode device comprises a miniature light-emitting diode chip and a color conversion structure, and the color conversion structure comprises a light blocking wall layer, a quantum dot layer and a bonding layer; the light blocking wall layer comprises a plurality of light blocking walls which are arranged at intervals, and a groove structure is formed between every two adjacent light blocking walls; the quantum dot layer comprises a quantum dot structure filled in at least part of the groove structure; the bonding layer comprises a bonding structure filled in at least part of the groove structure; wherein the plurality of groove structures of the color conversion structure and the plurality of pixel structures of the micro light-emitting diode chip are arranged in a one-to-one correspondence manner, and the color conversion structure is connected with the micro light-emitting diode chip through the bonding layer. On the basis, the color conversion structure can well solve the problem that the bonding effect of the color conversion structure and the micro light-emitting diode chip is poor due to excessive glue when the color conversion structure and the micro light-emitting diode chip are bonded and connected.

Description

Technical Field

[0001] The present application relates to the field of semiconductor light emitting technology, and in particular to a micro light emitting diode device and a manufacturing method thereof, and a display device. Background Art

[0002] Micro-LED (Micro-Light Emitting Diode) display technology is a display technology that miniaturizes and arrays the traditional LED (Light Emitting Diode) structure and uses CMOS (Complementary Metal Oxide Semiconductor) or TFT (Thin Film Transistor) to make driving circuits to achieve addressing control and individual drive of each pixel structure.

[0003] Micro-LED chips achieve full-color display through a quantum dot color conversion layer, but the adhesion between Micro-LED chips and quantum dot color conversion layers in related technologies is poor. Summary of the invention

[0004] The purpose of the present application is to provide a micro light emitting diode device and a manufacturing method thereof, and a display device.

[0005] In order to solve the above problems, in a first aspect, the present application provides a micro light emitting diode device, comprising:

[0006] A micro light emitting diode chip comprising a plurality of pixel structures; and

[0007] A color conversion structure, comprising a light-blocking wall layer, a quantum dot layer and an adhesive layer; the light-blocking wall layer comprises a plurality of light-blocking walls arranged at intervals, and a groove structure is formed between two adjacent light-blocking walls; the quantum dot layer comprises a quantum dot structure filled in at least a portion of the groove structure; the adhesive layer comprises an adhesive structure filled in at least a portion of the groove structure;

[0008] The plurality of groove structures of the color conversion structure are arranged in one-to-one correspondence with the plurality of pixel structures of the micro-LED chip, and the color conversion structure is connected to the micro-LED chip via the adhesive layer.

[0009] Optionally, the color conversion structure further includes a transparent substrate, and the light blocking wall layer is arranged on the transparent substrate.

[0010] Optionally, at least part of the bonding structure is disposed between the quantum dot structure and the micro light emitting diode chip.

[0011] Optionally, the sum of the height of the quantum dot structure and the height of the bonding structure arranged in the same groove structure is less than or equal to the height of the groove structure.

[0012] Optionally, the light blocking wall layer includes a plurality of groove structure groups, each of which includes a first groove structure, a second groove structure and a third groove structure;

[0013] The quantum dot layer includes a first quantum dot structure and a second quantum dot structure for stimulating visible light of different colors, the first quantum dot structure is arranged in the first groove structure, and the second quantum dot structure is arranged in the second groove structure; the light stimulated by the first quantum dot structure and the second quantum dot structure is used to synthesize white light;

[0014] Among them, the bonding layer includes at least one of a first bonding structure, a second bonding structure, and a third bonding structure, the first bonding structure is arranged between the first quantum dot structure and the micro light-emitting diode chip, the second bonding structure is arranged between the second quantum dot structure and the micro light-emitting diode chip, and the third bonding structure is arranged in the third groove structure.

[0015] Optionally, the quantum dot layer further includes a light-transmitting structure, the light-transmitting structure is arranged in the third groove structure, and the third adhesive structure is arranged between the light-transmitting structure and the micro light-emitting diode chip.

[0016] Optionally, the light-transmitting structure includes at least one of the following:

[0017] A light filtering structure, the light filtering structure is used to partially absorb the light emitted by the micro light emitting diode chip;

[0018] A third quantum dot structure, wherein the colors of light excited by the third quantum dot structure, the second quantum dot structure and the first quantum dot structure are different. Optionally, when the bonding layer includes the first bonding structure, the second bonding structure and the third bonding structure at the same time, the first bonding structure, the second bonding structure and the third bonding structure are flush with the surface to which the micro light-emitting diode chip is bonded.

[0019] Optionally, the micro light emitting diode device further includes:

[0020] The encapsulation layer wraps the side wall of the color conversion structure, and the height of the encapsulation layer is less than or equal to the height of the side wall of the color conversion structure.

[0021] In a second aspect, the present application also provides a method for manufacturing a micro light emitting diode device, comprising:

[0022] Forming a light-blocking wall layer on a transparent substrate, wherein the light-blocking wall layer comprises a plurality of light-blocking walls arranged at intervals, and a groove structure is formed between two adjacent light-blocking walls;

[0023] Filling a quantum dot structure in at least a portion of the groove structure to form a quantum dot layer;

[0024] Filling at least a portion of the groove structure with an adhesive structure to form an adhesive layer, and forming a color conversion structure;

[0025] The color conversion structure is connected to the micro light emitting diode chip through the adhesive layer to form a micro light emitting diode device.

[0026] Optionally, the step of filling a quantum dot structure in at least a portion of the groove structure and forming a quantum dot layer includes:

[0027] Filling a quantum dot structure in at least a portion of the groove structure;

[0028] The quantum dot structure is cured to form a quantum dot layer.

[0029] Optionally, the step of filling at least a portion of the groove structure with an adhesive structure and forming an adhesive layer includes:

[0030] A photolithographic adhesive structure is spin-coated on the surface of the structure after the light-blocking wall layer and the quantum dot layer are formed, the adhesive structure is UV-developed according to a preset pattern, and the adhesive structure is filled in at least a portion of the groove structure to form an adhesive layer.

[0031] Optionally, the light blocking wall layer includes a plurality of groove structure groups, each of which includes a first groove structure, a second groove structure and a third groove structure;

[0032] The step of filling the quantum dot structure in at least a portion of the groove structure and forming a quantum dot layer comprises:

[0033] A first quantum dot structure is filled in each of the first groove structures, a second quantum dot structure is filled in each of the second groove structures, and a light-transmitting structure is filled in each of the third groove structures; the first quantum dot structure and the second quantum dot structure are used to excite visible light of different colors, and the light excited by the first quantum dot structure and the second quantum dot structure is used to synthesize white light;

[0034] The step of filling at least a portion of the groove structure with an adhesive structure and forming an adhesive layer comprises:

[0035] An adhesive structure is filled on a side of each of the first quantum dot structure, the second quantum dot structure, and the light-transmitting structure away from the transparent substrate to form an adhesive layer, and the surface of the adhesive structure does not exceed the surface of the groove structure.

[0036] Optionally, the step of connecting the color conversion structure to the micro light emitting diode chip via the adhesive layer comprises:

[0037] The color conversion structure is thermally pressed and bonded to the micro light emitting diode chip through the adhesive layer.

[0038] Optionally, the manufacturing method further comprises:

[0039] The transparent substrate is peeled off.

[0040] Optionally, the manufacturing method further comprises:

[0041] An encapsulation layer is formed on the sidewall of the color conversion structure, and the height of the encapsulation layer is smaller than or equal to the height of the color conversion structure.

[0042] In a third aspect, the present application also provides a display device, comprising the micro-light emitting diode device as described above; or, comprising a micro-light emitting diode device prepared by the method for preparing the micro-light emitting diode device as described above.

[0043] Based on the above technical scheme, in the micro-LED device and manufacturing method, and display device provided by the present application, the quantum dot structure of the quantum dot layer of the color conversion structure of the micro-LED device is filled in at least part of the groove structure, and the bonding structure of the bonding layer is also filled in at least part of the groove structure. On the one hand, the bonding layer does not need to increase the thickness of the color conversion structure, and the color conversion structure can achieve a light and thin design; on the other hand, the bonding layer arranged in the groove structure is not easy to leak light under the action of the light blocking wall. When the color conversion structure is connected to the micro-LED chip, it can also avoid the optical crosstalk caused by the bonding layer arranged between the color conversion structure and the micro-LED chip in the related technology, and reduce the optical crosstalk between different pixel structures of the micro-LED chip; on the other hand, when the color conversion structure is connected to the micro-LED chip, the bonding structure arranged in the groove structure is not easy to overflow glue and stick to the bonding equipment or bonding equipment, which can reduce the problem of low bonding yield between the color conversion structure and the micro-LED chip due to the overflow of glue in the bonding process or bonding process of the color conversion structure and the micro-LED chip. Based on this, the color conversion structure of the present application has the properties of thin thickness, not easy to leak light, and not easy to overflow glue. Under the action of the color conversion structure of the present application, the micro light emitting diode chip can achieve high brightness, wide color gamut, and low power consumption display performance. BRIEF DESCRIPTION OF THE DRAWINGS

[0044] In order to more clearly illustrate the technical solution in this application, the following is a brief introduction to the drawings required for the description of the embodiments. Obviously, the drawings described below are only some embodiments of this application, and those skilled in the art can obtain other drawings based on these drawings without creative work.

[0045] In order to more completely understand the present application and its beneficial effects, the following description will be given in conjunction with the accompanying drawings, wherein the same figure numbers represent the same parts in the following description.

[0046] Figure 1 A schematic diagram of the first structure of a micro light emitting diode device provided in an embodiment of the present application;

[0047] Figure 2 A schematic diagram of a first structure of a color conversion structure provided in an embodiment of the present application;

[0048] Figure 3 A schematic diagram of a production process of a color conversion structure provided in an embodiment of the present application;

[0049] Figure 4 A second structural schematic diagram of the color conversion structure provided in an embodiment of the present application;

[0050] Figure 5 A second structural schematic diagram of a micro light emitting diode device provided in an embodiment of the present application;

[0051] Figure 6 A schematic diagram of a process for manufacturing a micro light emitting diode device provided in an embodiment of the present application;

[0052] Figure 7 A schematic diagram of the structure of a display device provided in an embodiment of the present application.

[0053] The reference numerals are:

[0054] 10. Micro light-emitting diode device; 20. Display device; 100. Color conversion structure; 200. Micro light-emitting diode chip; 300. Encapsulation layer; 110. Transparent substrate; 120. Light-blocking wall layer; 130. Quantum dot layer; 140. Adhesive layer; 121. Light-blocking wall; 122. Groove structure group; 131. Quantum dot structure; 141. Adhesive structure; 1221. First groove structure; 1222. Second groove structure; 1223. Third groove structure; 1311. First quantum dot structure; 1312. Second quantum dot structure; 1313. Light-transmitting structure; 1411. First adhesive structure; 1412. Second adhesive structure; 1413. Third adhesive structure. DETAILED DESCRIPTION

[0055] The following will be combined with the appendix of this application Figure 1 To Attachment Figure 7 The technical solutions in this application are clearly and completely described in the following embodiments. Obviously, the described embodiments are only part of the embodiments of this application, not all of them. Based on the embodiments in this application, all other embodiments obtained by those skilled in the art without creative work are within the scope of protection of this application.

[0056] Reference to "embodiments" herein means that a particular feature, structure, or characteristic described in conjunction with the embodiments may be included in at least one embodiment of the present application. The appearance of the phrase in various locations in the specification does not necessarily refer to the same embodiment, nor is it an independent or alternative embodiment that is mutually exclusive with other embodiments. It is explicitly and implicitly understood by those skilled in the art that the embodiments described herein may be combined with other embodiments.

[0057] With the continuous development of Micro-LED display technology, it is gradually developing in the direction of small size and high resolution. At present, the full-color display of Micro LED can be achieved by printing quantum dot (Quantum Dot, QD) materials. Using blue light Micro LED to excite the red and green quantum dot color conversion layer is one of the methods to achieve full color of Micro LED. In the related technology, the Micro LED chip and the color conversion layer are fixed by coating the adhesive on the bonding surface of the Micro LED chip and the color conversion layer and bonding the Micro LED chip and the color conversion layer together. As the Micro LED chip continues to shrink, the generation of bubbles and overflow of glue in the display area during the bonding process become more and more serious, which greatly affects the bonding yield of Micro LED.

[0058] In order to solve the above-mentioned technical problems, the present application provides a color conversion structure and a manufacturing method, a micro-light-emitting diode device and a manufacturing method, and a display device. The color conversion structure arranges the quantum dot structure and the bonding structure in a groove structure formed by a light-blocking wall layer. When the color conversion structure is connected to the micro-light-emitting diode chip, the bonding structure located in the groove structure is not easy to overflow from the groove structure, which can reduce the glue overflow phenomenon when the color conversion structure is connected to the micro-light-emitting diode chip.

[0059] The following is a detailed description with reference to specific embodiments. It should be noted that the embodiments of the present application can be presented in various forms, some examples of which will be described below.

[0060] Please refer to Figure 1 and Figure 2 , Figure 1 This is a schematic diagram of a first structure of a micro light emitting diode device 10 provided in an embodiment of the present application. Figure 2 A schematic diagram of the first structure of the color conversion structure 100 provided in an embodiment of the present application. The micro-LED device 10 includes a color conversion structure 100 and a micro-LED chip 200. The color conversion structure 100 includes a light-blocking wall layer 120, a quantum dot layer 130 and an adhesive layer 140. The light-blocking wall layer 120 includes a plurality of light-blocking walls 121 arranged at intervals, and a groove structure is formed between two adjacent light-blocking walls 121. The quantum dot layer 130 includes a quantum dot structure 131 filled in at least part of the groove structure. The adhesive layer 140 includes an adhesive structure 141 filled in at least part of the groove structure. Among them, the plurality of groove structures of the color conversion structure 100 are arranged in a one-to-one correspondence with the plurality of pixel structures of the micro-LED chip 200, and the color conversion structure 100 is connected to the micro-LED chip 200 through the adhesive layer 140.

[0061] It is understandable that if Figure 1 and Figure 2 As shown, in some examples, the color conversion structure 100 further includes a transparent substrate 110. A light-blocking wall layer 120 is disposed on the transparent substrate 110. A plurality of light-blocking walls 121 are disposed on the transparent substrate 110 at intervals, and two adjacent light-blocking walls 121 and the transparent substrate 110 form a groove structure. The transparent substrate 110 is a substrate structure through which visible light can pass. The transparent substrate 110 may be, but is not limited to, a transparent glass substrate, a transparent sapphire substrate, a transparent acrylic plate or a quartz plate. The color conversion structure 100 of this embodiment includes a transparent substrate 110 that carries the light-blocking wall layer 120. The color conversion structure 100 has a greater structural strength and a more stable structure, and the color conversion structure 100 is easier to connect with the micro-LED chip 200. It should be noted that in some examples, after the color conversion structure 100 is connected to the micro-LED chip 200, the transparent substrate 110 can also be peeled off so that the color conversion structure 100 and the micro-LED device 10 do not include the transparent substrate 110. At this time, the thickness of the micro light emitting diode device 10 is thinner, and a lightweight design of the micro light emitting diode device 10 can be achieved.

[0062] It is understandable that the light-blocking wall layer 120 can be, but is not limited to, a black matrix layer (Black Matrix, BM for short), and the light-blocking wall layer 120 has the functions of preventing light leakage and avoiding light crosstalk between different pixel structures. The light-blocking wall layer 120 includes a plurality of light-blocking walls 121, and two adjacent light-blocking walls 121 and the transparent substrate 110 form a groove structure with an opening facing upward, and the groove structure is used to fill the quantum dot material and the adhesive material. Among them, the plurality of light-blocking walls 121 are used for array arrangement to form a tunnel array on the transparent substrate 110, and the plurality of light-blocking walls 121 have the same height, and the groove structure formed by two adjacent light-blocking walls 121 has the same or approximately the same diameter, for example, the height of each groove structure is about 6 microns, and the diameter of each groove structure is about 4 microns. It should be noted that in other examples, different groove structures can be arranged in other ways, and different groove structures can also have different diameters.

[0063] It is understandable that the quantum dot structure 131 of the quantum dot layer 130 is a type of nanoconductor material with unique photoelectric properties, which emits light of a specific frequency when excited by external energy (such as light or electricity). The color of the light emitted by the quantum dot can be controlled by adjusting the size of the quantum dot. Among them, multiple quantum dot structures 131 of the quantum dot layer 130 can emit light of the same color, and some quantum dot structures 131 in the multiple quantum dot structures 131 can also emit light of different colors. Among them, the quantum dot structure 131 is filled in all or part of the groove structure. In a groove structure, the height of the quantum dot structure 131 filled therein is less than the height of the groove structure, so that the groove structure reserves space for filling the adhesive structure 141.

[0064] It is understandable that the adhesive structure 141 of the adhesive layer 140 is filled in all or part of the groove structure. The adhesive structure 141 can be, but is not limited to, a photolithographic hot melt adhesive, wax or other materials, and the properties of the adhesive structure 141 are similar to hot slip adhesive. In the production process, a transparent glue / wax that can be hot-melted at high temperature and has photolithography capabilities is used for spin coating to make the thickness of the adhesive as thin as possible, bake to evaporate the adhesive solvent, pre-cure and photolithograph the shape, and form the adhesive layer 140. Among them, the multiple adhesive structures 141 of the adhesive layer 140 can be structures of the same material or structures of different materials. In some examples, the adhesive structures 141 filled in the multiple groove structures have the same or different heights.

[0065] The quantum dot structure 131 of the quantum dot layer 130 of the color conversion structure 100 of the micro-LED device 10 of the embodiment of the present application is filled in at least part of the groove structure, and the adhesive structure 141 of the adhesive layer 140 is also filled in at least part of the groove structure. On the one hand, the adhesive layer 140 does not need to increase the thickness of the color conversion structure 100, and the color conversion structure 100 can achieve a light and thin design; on the other hand, the adhesive layer 140 arranged in the groove structure is not easy to leak light under the action of the light blocking wall 121. When the color conversion structure 100 is connected to the micro-LED chip 200, it can also avoid the problem of being arranged in the color conversion structure 100 in the related art. The light crosstalk caused by the adhesive layer 140 between the color conversion structure 100 and the micro-LED chip 200 reduces the light crosstalk between different pixel structures; on the other hand, when the color conversion structure 100 is connected to the micro-LED chip 200, the adhesive structure 141 arranged in the groove structure is not easy to overflow glue and stick to the laminating device or bonding device, which can reduce the problem of low bonding yield of the color conversion structure 100 and the micro-LED chip 200 caused by the overflow of glue in the laminating process or bonding process of the color conversion structure 100 and the micro-LED chip 200. Based on this, the color conversion structure 100 of the present application has the properties of thin thickness, not easy to leak light, and not easy to overflow glue. Under the action of the color conversion structure 100 of the present application, the micro-LED chip 200 can achieve high brightness, wide color gamut, and low power consumption display performance.

[0066] In some examples, such as Figure 2 As shown, at least part of the bonding structure 141 is disposed between the quantum dot structure 131 and the micro-LED chip 200. For example, when the groove structure includes both the quantum dot structure 131 and the bonding structure 141, the bonding structure 141 is disposed on the side of the quantum dot structure 131 away from the transparent substrate 110. At this time, on the one hand, the bonding structure 141 is separated from the quantum dot structure 131, and the bonding structure 141 is not likely to affect the performance of the quantum dot structure 131; on the other hand, the bonding structure 141 is closer to the opening of the groove structure, and the bonding structure 141 is more easily bonded and fixed to the micro-LED chip 200. It should be noted that in other examples, the bonding structure 141 is simultaneously disposed between the quantum dot structure 131 and the transparent substrate 110, and is disposed on the side of the quantum dot structure 131 away from the transparent substrate 110; or, the bonding structure 141 and the quantum dot structure 131 are mixed.

[0067] In some examples, such as Figure 2As shown, when a certain groove structure includes both the quantum dot structure 131 and the bonding structure 141, the sum of the height of the quantum dot structure 131 and the height of the bonding structure 141 disposed in the same groove structure is less than or equal to the height of the groove structure (or the height of the light-blocking wall 121). At this time, the bonding structure 141 does not extend beyond the groove structure, and when the color conversion structure 100 is connected to the micro-LED chip 200, the bonding structure 141 is not likely to overflow, and is not likely to affect the bonding yield of the color conversion structure 100 and the micro-LED chip 200.

[0068] In some examples, such as Figure 2 As shown, the light-blocking wall layer 120 includes a plurality of groove structure groups 122, and three adjacent groove structures in the light-blocking wall layer 120 form a groove structure group 122, and each groove structure group 122 includes a first groove structure 1221, a second groove structure 1222, and a third groove structure 1223. The quantum dot layer 130 includes a first quantum dot structure 1311 and a second quantum dot structure 1312 that excite visible light of different colors, the first quantum dot structure 1311 is disposed in the first groove structure 1221, and the second quantum dot structure 1312 is disposed in the second groove structure 1222. In some examples, the quantum dot layer 130 also includes a light-transmitting structure 1313, and the light-transmitting structure 1313 is disposed in the third groove structure 1223. The adhesive layer 140 includes at least one of a first adhesive structure 1411, a second adhesive structure 1412, and a third adhesive structure 1413. The first adhesive structure 1411 is disposed on a side of the first quantum dot structure 1311 away from the transparent substrate 110, and the first adhesive structure 1411 is disposed between the first quantum dot structure 1311 and the micro-LED chip 200. The second adhesive structure 1412 is disposed on a side of the second quantum dot structure 1312 away from the transparent substrate 110, and the second adhesive structure 1412 is disposed between the second quantum dot structure 1312 and the micro-LED chip 200. The third adhesive structure 1413 is disposed in the third groove structure 1223, for example, the third adhesive structure 1413 is disposed on a side of the light-transmitting structure 1313 away from the transparent substrate 110, and the third adhesive structure 1413 is disposed between the light-transmitting structure 1313 and the micro-LED chip 200.

[0069] It can be understood that the light-blocking wall layer 120 includes a plurality of groove structures and a plurality of groove structure groups 122, and each groove structure corresponds to a pixel structure of the micro-LED chip 200. The first quantum dot structure 1311 may be, but is not limited to, a red quantum dot structure, and the light can emit red visible light after being excited by the first quantum dot structure 1311. The second quantum dot structure 1312 may be, but is not limited to, a green quantum dot structure, and the light can emit green visible light after being excited by the second quantum dot structure 1312. The light-transmitting structure 1313 is a structure that allows light to penetrate. Among them, in some examples, the light-transmitting structure 1313 does not change the color of the light. For example, the micro-LED chip 200 emits blue light, and the light-transmitting structure 1313 may be, but is not limited to, a transparent colloid, etc., and the blue light can pass through the transparent colloid and emit. At this time, the light excited by the first quantum dot structure 1311 and the second quantum dot structure 1312 and the light emitted by the micro-LED chip 200 can realize the full-color display of the micro-LED chip 200. In some other examples, the light-transmitting structure 1313 can also change the color of the light. For example, the light-transmitting structure 1313 includes a third quantum dot structure, and the colors of the light excited by the third quantum dot structure, the second quantum dot structure 1312 and the first quantum dot structure 1311 are different. Exemplarily, the third quantum dot structure is, for example but not limited to, a blue quantum dot structure, and the light can emit blue visible light after being excited by the light-transmitting structure 1313. At this time, under the action of the first quantum dot structure 1311, the second quantum dot structure 1312 and the third quantum dot structure, the color conversion structure 100 can achieve full-color display of the micro-LED chip 200. In some other examples, the light-transmitting structure 1313 can also include a filter structure, and the light-transmitting structure 1313 can emit light in a specific frequency range, and the color of the visible light passing through the filter structure is different from the color of the visible light excited by the first quantum dot structure 1311 and the second quantum dot structure 1312. For example, the filter structure can allow blue visible light to pass through. At this time, the color conversion structure 100 can achieve full-color display of the micro-LED chip 200. In addition, when the light-transmitting structure 1313 includes a filter structure, the filter structure can absorb part of the light emitted by the micro-LED chip 200 corresponding to the position of the filter structure, and adjust the proportion of the corresponding color light of the micro-LED chip 200 when synthesizing white light, thereby improving the color purity of the micro-LED device 10. It should be noted that, in a specific embodiment, the light-transmitting structure 1313 can include one, two or three of the transparent colloid, the third quantum dot structure, and the filter structure.

[0070] It is understood that in the embodiment in which the quantum dot layer 130 includes the light-transmitting structure 1313 and the embodiment in which the light-transmitting structure 1313 is not included, the light excited by the first quantum dot structure 1311 and the second quantum dot structure 1312 can be used to synthesize white light to achieve full-color display. Here, the light excited by the two quantum dot structures is used to synthesize white light, which means that the light excited by the two quantum dot structures is the entire component of white light, or is a partial component of white light. Exemplarily, in some embodiments, the light excited by the first quantum dot structure 1311 and the light excited by the second quantum dot structure 1312 can be directly synthesized into white light, for example, the first quantum dot structure 1311 excites blue light, the second quantum dot structure 1312 excites yellow light, and the two lights are mixed to obtain white light. In other embodiments, the light excited by the first quantum dot structure 1311 and the light excited by the second quantum dot structure 1312 can be synthesized into white light with the light emitted by the micro-light-emitting diode chip 200, for example, the micro-light-emitting diode chip 200 emits blue light, the first quantum dot structure 1311 excites red light, and the second quantum dot structure 1312 excites green light, and the three lights are mixed to synthesize white light.

[0071] It is understandable that if Figure 1 As shown, the adhesive layer 140 may include a first adhesive structure 1411, a second adhesive structure 1412, and a third adhesive structure 1413 at the same time, so that the first quantum dot structure 1311 and the first adhesive structure 1411 can be simultaneously disposed in each first groove structure 1221, the second quantum dot structure 1312 and the second adhesive structure 1412 can be simultaneously disposed in each second groove structure 1222, and the light-transmitting structure 1313 and the third adhesive structure 1413 can be simultaneously disposed in each third groove structure 1223. Of course, in other examples, the adhesive layer 140 may also include only one or two of the first adhesive structure 1411, the second adhesive structure 1412, and the third adhesive structure 1413.

[0072] It is understandable that if Figure 2As shown, the first quantum dot structure 1311, the second quantum dot structure 1312, and the light-transmitting structure 1313 are flush with the surface away from the transparent substrate 110, and different areas of the quantum dot layer 130 have the same height. At this time, the volumes of the first quantum dot structure 1311, the second quantum dot structure 1312, and the light-transmitting structure 1313 filled in the groove structure through the spin coating process are approximately equal, and it is easier to control the amount of adhesive material used in the process production. When the adhesive layer 140 includes the first adhesive structure 1411, the second adhesive structure 1412 and the third adhesive structure 1413 at the same time, the first adhesive structure 1411, the second adhesive structure 1412 and the third adhesive structure 1413 are flush with the surface of the transparent substrate 110 (i.e., the side connected to the micro light-emitting diode chip 200), and different areas of the adhesive layer 140 have the same height. At this time, the volumes of the first adhesive structure 1411, the second adhesive structure 1412 and the third adhesive structure 1413 filled in the groove structure by the spin coating process are also approximately equal, and it is also easier to control the amount of adhesive material used in the process production, thereby improving the yield of the micro light-emitting diode device 10.

[0073] It should be noted that in some examples, the surfaces of the first quantum dot structure 1311, the second quantum dot structure 1312, and the light-transmitting structure 1313 facing away from the transparent substrate 110 are not flush. In some examples, the surfaces of the first adhesive structure 1411, the second adhesive structure 1412, and the third adhesive structure 1413 facing away from the transparent substrate 110 are also not flush.

[0074] Understandably, please combine Figure 1 And refer to Figure 3 , Figure 3 A schematic diagram of a production process of the color conversion structure 100 provided in an embodiment of the present application. The present application first spin-coats a BM film for reducing the lateral propagation of light on a transparent substrate 110, and its thickness after spin coating is about 6 microns. A tunnel array with a diameter of 4 microns is prepared on the BM film by photolithography and development and baked and cured, and a light-blocking wall layer 120 including a plurality of light-blocking walls 121 is formed. The first quantum dot structure 1311, the second quantum dot structure 1312, and the light-transmitting structure 1313 are spin-coated on the prepared light-blocking wall layer 120, and the shapes are respectively photoetched and filled in the corresponding groove structures, and a quantum dot layer 130 is formed, and the thickness of the quantum dot layer 130 is about 4 to 5 microns; in this step, the first quantum dot structure 1311 can be spin-coated in the first groove structure 1221, the second quantum dot structure 1312 can be spin-coated in the second groove structure 1222, and the light-transmitting structure 1313 can be spin-coated in the third groove structure 1223 to form a light-transmitting structure 1313. Subsequently, a layer of photolithographic hot melt adhesive is spin-coated, and the spin-coating rate is adjusted to make the adhesive material thickness 1 micron to 2 microns. Subsequently, it is photolithographically formed into the groove structure and cured at 90 degrees Celsius to 110 degrees Celsius to form an adhesive layer 140 including a plurality of adhesive structures 141.

[0075] The quantum dot layer 130 of the color conversion structure 100 of the embodiment of the present application includes a first quantum dot structure 1311 and a second quantum dot structure 1312 of different colors, and the color conversion structure 100 can realize full-color display of the micro-LED chip 200. In addition, when the quantum dot layer 130 includes the light-transmitting structure 1313, the first quantum dot structure 1311 and the second quantum dot structure 1312 at the same time, the adhesive layer 140 is more likely to control the amount of adhesive material of the first adhesive structure 1411, the second adhesive structure 1412 and the third adhesive structure 1413, thereby improving the yield of the micro-LED device 10.

[0076] Among them, please refer to Figure 4 , Figure 4 This is a schematic diagram of a second structure of the color conversion structure 100 provided in an embodiment of the present application. In this embodiment, the quantum dot layer 130 includes a first quantum dot structure 1311 and a second quantum dot structure 1312 but does not include a light-transmitting structure 1313. At this time, the third adhesive structure 1413 is disposed in the third groove structure 1223, and the third groove structure 1223 is only filled with the third adhesive structure 1413 but not the light-transmitting structure 1313. The quantum dot layer 130 in the embodiment of the present application does not include the light-transmitting structure 1313, and the production process of forming the light-transmitting structure 1313 can be omitted in the production process, thereby improving the production efficiency of the color conversion structure 100.

[0077] It is understood that in some examples, such as Figure 4 As shown, when the adhesive layer 140 includes the first adhesive structure 1411, the second adhesive structure 1412 and the third adhesive structure 1413, the height of the third adhesive structure 1413 is greater than the height of the first adhesive structure 1411 and the second adhesive structure 1412, so that the first adhesive structure 1411, the second adhesive structure 1412 and the third adhesive structure 1413 are flush with the surface away from the transparent substrate 110. When the color conversion structure 100 is connected to the micro-LED chip 200, the bonding surface of the third adhesive structure 1413 can be flush with the bonding surfaces of the first adhesive structure 1411 and the second adhesive structure 1412, and the bonding surface of the adhesive layer 140 and the micro-LED chip 200 is smoother, and the bonding effect of the two is better. In some examples, the color conversion structure 100 is bonded to the micro-LED chip 200. For example, the color conversion structure 100 and the micro-LED chip 200 are bonded at high temperature and pressure. In this step, the color conversion structure 100 and the micro-LED chip 200 are heated and pressure-bonded for a period of time, and then cooled to room temperature. At this time, the adhesive material will tightly adhere the color conversion structure 100 and the micro-LED chip 200 together. The bonding temperature can be, but is not limited to, 70 degrees Celsius to 140 degrees Celsius, and the bonding pressure is less than or equal to 30 Newtons.

[0078] In the embodiment of the present application, the high temperature makes the adhesive layer 140 of the color conversion structure 100 melt, and it has a certain adhesive ability; the pressure is applied to make the color conversion structure 100 and the micro-LED chip 200 tightly bonded; after bonding, the micro-LED device 10 is cooled and solidified to fix the shape of the micro-LED device 10. During the bonding process, the adhesive layer 140 of the color conversion structure 100 melts from a solid state to a liquid state. By controlling the bonding temperature and pressure, the amount of colloid melted from the adhesive layer 140 to a liquid state can be controlled, and then the amount of glue overflow after the color conversion structure 100 and the micro-LED chip 200 are bonded can be controlled, and it is not easy to contaminate the bonding equipment; at the same time, the adhesive layer 140 melted from a solid state to a liquid state generates fewer bubbles during the pressurized bonding process, and the bonding yield of the color conversion structure 100 and the micro-LED chip 200 is better.

[0079] In some examples, the micro-LED device 10 further includes a driver chip (not shown in the drawings), which is electrically connected to the micro-LED chip 200, and is used to drive and control the micro-LED chip 200 to emit light. The micro-LED chip 200 of the embodiment of the present application can be electrically connected to the driver chip first, and then to the color conversion structure 100; the micro-LED chip 200 can also be electrically connected to the color conversion structure 100 first, and then to the driver chip.

[0080] Among them, in some examples, please refer to Figure 5 , Figure 5 This is a schematic diagram of a second structure of a micro-LED device 10 provided in an embodiment of the present application. The micro-LED device 10 further includes a packaging layer 300 , which wraps the side wall of the color conversion structure 100 , and the height of the packaging layer 300 is less than or equal to the side wall height of the color conversion structure 100 .

[0081] It is understood that the encapsulation layer 300 may include, but is not limited to, encapsulation glue, and the encapsulation layer 300 is encapsulated along the edge of the color conversion structure 100. In some examples, the height of the encapsulation layer 300 is about 20 microns to 200 microns, and the encapsulation layer 300 can tightly wrap the edge of the color conversion structure 100 but not overflow into the light-emitting area of ​​the micro-LED chip 200. After curing, the encapsulation layer 300 can firmly fix the color conversion structure 100.

[0082] The encapsulation layer 300 of the embodiment of the present application encapsulates the color conversion structure 100, thereby improving the waterproof and dustproof performance of the micro-LED device 10. At the same time, the height of the encapsulation layer 300 is less than the side wall height of the color conversion structure 100, and the encapsulation layer 300 is not likely to affect the display effect of the micro-LED device 10.

[0083] Based on the above-mentioned color conversion structure 100 and the solution of the micro-LED device 10, the present application also provides a method for manufacturing the color conversion structure 100. Please refer to Figure 6 , Figure 6 A schematic flow chart of a method for manufacturing a micro-light emitting diode device 10 provided in an embodiment of the present application includes:

[0084] In S11 , a light-blocking wall layer 120 is formed on the transparent substrate 110 . The light-blocking wall layer 120 includes a plurality of light-blocking walls 121 that are spaced apart from each other. Two adjacent light-blocking walls 121 and the transparent substrate 110 form a groove structure.

[0085] In this step, a BM film for reducing the lateral propagation of light is spin-coated on the transparent substrate 110, and the thickness of the BM film after spin coating is about 6 microns. Then, a plurality of light-blocking walls 121 arranged at intervals are formed on the BM film through photolithography and development processes, and two adjacent light-blocking walls 121 and the transparent substrate 110 form a groove structure with an opening facing upward, and the diameter of the groove structure is about 4 microns, and the groove structure is used to fill the quantum dot material and the adhesive material.

[0086] In S12 , the quantum dot structure 131 is filled in at least a portion of the groove structure to form a quantum dot layer 130 .

[0087] In this step, the first quantum dot structure 1311, such as a red quantum dot structure, the second quantum dot structure 1312, such as a green quantum dot structure, and the light-transmitting structure 1313, such as a blue hole filler, are spin-coated in the groove structure of the prepared light-blocking wall layer 120, and the shapes are photoetched out and filled in the corresponding groove structures, thereby forming a quantum dot layer 130, the thickness of which is about 4 to 5 microns.

[0088] In S13, the adhesive structure 141 is filled in at least a portion of the groove structure to form an adhesive layer 140, and the color conversion structure 100 is formed.

[0089] In this step, a layer of photolithographic hot melt adhesive is spin-coated, and the spin-coating rate is adjusted to make the adhesive material thickness 1 micron to 2 microns. Then, the adhesive material is photolithographically formed into the groove structure, and cured at 90 degrees Celsius to 110 degrees Celsius to form an adhesive layer 140. The adhesive layer 140 can realize the connection between the color conversion structure 100 and the micro-LED chip 200. In this step, the adhesive layer thickness of the adhesive layer 140 can be controlled by spin coating, and the adhesive layer retention position of the adhesive layer 140 can be controlled by photolithography.

[0090] In S14 , the color conversion structure 100 is connected to the micro light emitting diode chip 200 via the adhesive layer 140 , and the micro light emitting diode device 10 is formed.

[0091] In the manufacturing method of the micro-LED device 10 of the embodiment of the present application, the adhesive structure 141 of the adhesive layer 140 is filled in at least part of the groove structure, and the adhesive layer 140 does not need to increase the thickness of the color conversion structure 100, so that the color conversion structure 100 can achieve a light and thin design; at the same time, the adhesive structure 141 arranged in the groove structure is not easy to leak light under the action of the light blocking wall 121. When the color conversion structure 100 is connected to the micro-LED chip 200, it can also avoid the light crosstalk caused by the adhesive layer 140 arranged between the color conversion structure 100 and the micro-LED chip 200 in the related art, reduce light leakage and reduce light crosstalk; moreover, the adhesive structure 141 arranged in the groove structure is not easy to overflow glue and affect the bonding yield of the color conversion structure 100 and the micro-LED chip 200. Under the action of the color conversion structure 100 of the present application, the micro-LED chip 200 can achieve high brightness, wide color gamut, and low power consumption display.

[0092] In some examples, the light-blocking wall layer 120 includes a plurality of groove structure groups 122, three adjacent groove structures in the light-blocking wall layer 120 form a groove structure group 122, and each groove structure group 122 includes a first groove structure 1221, a second groove structure 1222, and a third groove structure 1223. Step S12: Filling the quantum dot structure 131 in at least part of the groove structure to form the quantum dot layer 130 includes: filling the first quantum dot structure 1311 in each first groove structure 1221, filling the second quantum dot structure 1312 in each second groove structure 1222, and filling the light-transmitting structure 1313 in each third groove structure 1223; the first quantum dot structure 1311 and the second quantum dot structure 1312 are used to excite visible light of different colors, and the light excited by the first quantum dot structure 1311 and the second quantum dot structure 1312 is used to synthesize white light. Step S13 of filling at least part of the groove structure with the adhesive structure 141 and forming the adhesive layer 140 includes: filling the adhesive structure 141 and forming the adhesive layer 140 on the side of each first quantum dot structure 1311, the second quantum dot structure 1312, and the light-transmitting structure 1313 away from the transparent substrate 110, and making the surface of the adhesive layer 140 not exceed the surface of the groove structure.

[0093] The quantum dot layer 130 of the color conversion structure 100 of the embodiment of the present application includes a first quantum dot structure 1311 and a second quantum dot structure 1312 of different colors, and the color conversion structure 100 can realize full-color display of the micro-LED chip 200. In addition, when the quantum dot layer 130 includes the light-transmitting structure 1313, the first quantum dot structure 1311 and the second quantum dot structure 1312 at the same time, it is easier to control the morphology of the first adhesive structure 1411 to the third adhesive structure 1413 of the adhesive layer 140 during processing, improve the yield reduction caused by the adhesive material flowing to other positions, and thus improve the yield of the micro-LED device 10.

[0094] In some examples, the step S12 of filling the quantum dot structure 131 in at least part of the groove structure to form the quantum dot layer 130 includes: filling the quantum dot structure 131 in at least part of the groove structure; and curing the quantum dot structure 131 to form the quantum dot layer 130. The quantum dot structure 131 of the embodiment of the present application is cured to form the quantum dot layer 130, and the solid quantum dot layer 130 is not easily mixed with the adhesive structure 141 subsequently filled in the groove structure, and the adhesive structure 141 is not easy to affect the color conversion performance of the quantum dot structure 131.

[0095] Among them, in some examples, the step S13 of filling the adhesive structure 141 in at least part of the groove structure to form the adhesive layer 140 includes: spin coating a layer of photolithographic adhesive structure 141 on the surface of the structure after forming the light blocking wall layer 120 and the quantum dot layer 130, UV developing the adhesive structure 141 according to a preset pattern, and filling the adhesive structure 141 in at least part of the groove structure to form the adhesive layer 140. The embodiment of the present application etches the glue layer and forms the adhesive structure 141 through the UV development step. The UV development process can not only realize the pattern etching of the adhesive layer 140, but also cure the adhesive structure 141. The present application does not need to set an additional baking process to realize the curing of the adhesive structure 141, and the production process of the adhesive layer 140 of the present application is simpler.

[0096] In some examples, step S14: connecting the color conversion structure 100 to the micro-LED chip 200 through the adhesive layer 140 includes: hot-pressing the color conversion structure 100 and the micro-LED chip 200 to form the micro-LED device 10. The color conversion structure 100 includes the color conversion structure 100 provided in any of the above embodiments or includes the color conversion structure 100 prepared by the method for preparing the color conversion structure 100 provided in any of the above embodiments.

[0097] In the present application, the color conversion structure 100 and the micro-LED chip 200 are bonded by heating and pressurizing. The high temperature makes the adhesive layer 140 of the color conversion structure 100 melt and have a certain bonding ability; the pressure makes the color conversion structure 100 and the micro-LED chip 200 tightly bonded; after bonding, the micro-LED device 10 is cooled and solidified to fix the shape of the micro-LED device 10. During the bonding process, the adhesive layer 140 of the color conversion structure 100 melts from a solid state to a liquid state. By controlling the bonding temperature and pressure, the amount of colloid melted from the adhesive layer 140 to a liquid state can be controlled, and then the amount of glue overflow after the color conversion structure 100 and the micro-LED chip 200 are bonded can be controlled, and it is not easy to contaminate the bonding equipment; at the same time, the adhesive layer 140 melted from a solid state to a liquid state generates fewer bubbles during the pressurized bonding process, and the adhesive layer 140 is not easy to affect the display effect of the micro-LED chip 200.

[0098] In some examples, the method for manufacturing the micro-LED device 10 of the embodiment of the present application further includes: peeling off the transparent substrate 110. At this time, the thickness of the micro-LED device 10 is thinner, and the micro-LED device 10 can be designed to be thin and light.

[0099] In some examples, the method for manufacturing the micro-LED device 10 of the present application further includes: forming an encapsulation layer 300 on the side wall of the color conversion structure 100, and making the height of the encapsulation layer 300 less than or equal to the height of the color conversion structure 100, and the top surface of the encapsulation layer 300 does not exceed the top surface of the color conversion structure 100. The encapsulation layer 300 can tightly wrap the edge of the color conversion structure 100 but does not overflow into the light-emitting area of ​​the micro-LED chip 200. After curing, the encapsulation layer 300 can not only firmly fix the color conversion structure 100, but also the height of the encapsulation layer 300 is less than the side wall height of the color conversion structure 100, and the encapsulation layer 300 is not easy to affect the display effect of the micro-LED device 10.

[0100] Based on the above description, the present application embodiment further provides a display device 20, please refer to Figure 7 , Figure 7A structural schematic diagram of a display device 20 provided in an embodiment of the present application. The display device 20 can be applied to electronic devices to realize extended reality (Extended Reality, XR) technologies such as augmented reality (AR), virtual reality (VR), and mixed reality (MR). In implementation, the display device 20 can be the projection part of an electronic device, such as a projector, a head-up display (HUD), etc.; for another example, the display device 20 can also be the display part of an electronic device, for example, the electronic device can include: any device with a display screen, such as a smart phone, a smart watch, a laptop computer, a tablet computer, a driving recorder, a navigator, a head-mounted device, etc.; for another example, the display device 20 can also be the lighting part of an electronic device, for example, the electronic device can include: any device with a lighting component, such as a vehicle, a street lamp, etc.

[0101] It can be understood that the display device 20 of the embodiment of the present application includes a micro-LED device 10, and the micro-LED device 10 includes the micro-LED device 10 of any of the above embodiments, or the micro-LED device 10 can be prepared by the manufacturing method of the micro-LED device 10 of any of the above embodiments. Therefore, the micro-LED device 10 of the display device 20 of the present application has the display performance of high brightness, wide color gamut, and low power consumption.

[0102] It should be noted that the color conversion structure 100 and manufacturing method, the micro-light emitting diode device 10 and manufacturing method, and the display device 20 of the embodiments of the present application are different subjects under the same inventive concept. Features not described in detail in each embodiment can be found in the description of other embodiments.

[0103] It should be noted that the "multiple" mentioned in this application generally refers to two or more. Moreover, the directional terms mentioned in the embodiments of the present application, such as "up", "down", "front", "back", "left", "right", "inside", "outside", "side", etc., are only with reference to the directions of the attached drawings. Therefore, the directional terms used are used to illustrate and understand the embodiments of the present application, rather than to limit the embodiments of the present application. In the various drawings, units with similar structures are represented by the same figure numbers. For clarity, the various parts in the drawings are not drawn to scale. In addition, certain related parts may not be shown in the drawings.

[0104] It should be understood that, in the description of this application, terms such as "first", "second", etc. are only used to distinguish similar objects, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features.

[0105] It is understandable that those skilled in the art can combine various implementations in the above embodiments under the guidance of the above embodiments to obtain technical solutions of multiple implementations. The above description is only a preferred embodiment of the present application and is not intended to limit the present application. Any modification, equivalent replacement and improvement made within the spirit and principle of the present application shall be included in the protection scope of the present application.

[0106] The micro-light emitting diode device and manufacturing method, and display device provided by the present application are introduced in detail above. Specific examples are used in this article to illustrate the principle and implementation method of the present application. The description of the above embodiments is only used to help understand the present application. At the same time, for those skilled in the art, according to the idea of ​​the present application, there will be changes in the specific implementation method and application scope. In summary, the content of this specification should not be understood as limiting the present application.

Claims

1. A micro light emitting diode device, characterized in that: include: A micro light emitting diode chip including a plurality of pixel structures; and A color conversion structure, comprising a light-blocking wall layer, a quantum dot layer and an adhesive layer; the light-blocking wall layer comprises a plurality of light-blocking walls arranged at intervals, and a groove structure is formed between two adjacent light-blocking walls; the quantum dot layer comprises a quantum dot structure filled in at least a portion of the groove structure; the adhesive layer comprises an adhesive structure filled in at least a portion of the groove structure; The plurality of groove structures of the color conversion structure are arranged in one-to-one correspondence with the plurality of pixel structures of the micro-LED chip, and the color conversion structure is connected to the micro-LED chip via the adhesive layer.

2. The micro light emitting diode device according to claim 1, characterized in that: The color conversion structure further includes a transparent substrate, and the light blocking wall layer is disposed on the transparent substrate.

3. The micro light emitting diode device according to claim 1, characterized in that: At least part of the bonding structure is disposed between the quantum dot structure and the micro-LED chip.

4. The micro light emitting diode device according to claim 3, characterized in that: The sum of the height of the quantum dot structure and the height of the bonding structure arranged in the same groove structure is less than or equal to the height of the groove structure.

5. The micro light emitting diode device according to claim 1, characterized in that: The light blocking wall layer includes a plurality of groove structure groups, each of which includes a first groove structure, a second groove structure and a third groove structure; The quantum dot layer includes a first quantum dot structure and a second quantum dot structure for stimulating visible light of different colors, the first quantum dot structure is arranged in the first groove structure, and the second quantum dot structure is arranged in the second groove structure; the light stimulated by the first quantum dot structure and the second quantum dot structure is used to synthesize white light; Among them, the bonding layer includes at least one of a first bonding structure, a second bonding structure, and a third bonding structure, the first bonding structure is arranged between the first quantum dot structure and the micro light-emitting diode chip, the second bonding structure is arranged between the second quantum dot structure and the micro light-emitting diode chip, and the third bonding structure is arranged in the third groove structure.

6. The micro light emitting diode device according to claim 5, characterized in that: The quantum dot layer further includes a light-transmitting structure, which is disposed in the third groove structure, and the third bonding structure is disposed between the light-transmitting structure and the micro-LED chip.

7. The micro light emitting diode device according to claim 6, characterized in that: The light-transmitting structure includes at least one of the following: A light filtering structure, the light filtering structure is used to partially absorb the light emitted by the micro light emitting diode chip; A third quantum dot structure, wherein the colors of light excited by the third quantum dot structure, the second quantum dot structure and the first quantum dot structure are different.

8. The micro light emitting diode device according to any one of claims 5 to 7, characterized in that: When the adhesive layer includes the first adhesive structure, the second adhesive structure and the third adhesive structure at the same time, the first adhesive structure, the second adhesive structure and the third adhesive structure are flush with the surface connected to the micro light emitting diode chip.

9. The micro light emitting diode device according to any one of claims 1 to 7, characterized in that: The micro light emitting diode device further comprises: The encapsulation layer wraps the side wall of the color conversion structure, and the height of the encapsulation layer is less than or equal to the height of the side wall of the color conversion structure.

10. A method for manufacturing a micro light emitting diode device, characterized in that: include: Forming a light-blocking wall layer on a transparent substrate, wherein the light-blocking wall layer comprises a plurality of light-blocking walls arranged at intervals, and a groove structure is formed between two adjacent light-blocking walls; Filling a quantum dot structure in at least a portion of the groove structure to form a quantum dot layer; Filling at least a portion of the groove structure with an adhesive structure to form an adhesive layer, and forming a color conversion structure; The color conversion structure is connected to the micro light emitting diode chip through the adhesive layer to form a micro light emitting diode device.

11. The method for manufacturing a micro light emitting diode device according to claim 10, characterized in that: The step of filling the quantum dot structure in at least a portion of the groove structure and forming a quantum dot layer comprises: Filling a quantum dot structure in at least a portion of the groove structure; The quantum dot structure is cured to form a quantum dot layer.

12. The method for manufacturing a micro light emitting diode device according to claim 10, characterized in that: The step of filling at least a portion of the groove structure with an adhesive structure and forming an adhesive layer comprises: A photolithographic adhesive structure is spin-coated on the surface of the structure after the light-blocking wall layer and the quantum dot layer are formed, the adhesive structure is UV-developed according to a preset pattern, and the adhesive structure is filled in at least a portion of the groove structure to form an adhesive layer.

13. The method for manufacturing a micro light emitting diode device according to claim 10, characterized in that: The light blocking wall layer includes a plurality of groove structure groups, each of which includes a first groove structure, a second groove structure and a third groove structure; The step of filling the quantum dot structure in at least a portion of the groove structure and forming a quantum dot layer comprises: A first quantum dot structure is filled in each of the first groove structures, a second quantum dot structure is filled in each of the second groove structures, and a light-transmitting structure is filled in each of the third groove structures; the first quantum dot structure and the second quantum dot structure are used to excite visible light of different colors, and the light excited by the first quantum dot structure and the second quantum dot structure is used to synthesize white light; The step of filling at least a portion of the groove structure with an adhesive structure and forming an adhesive layer comprises: An adhesive structure is filled on a side of each of the first quantum dot structure, the second quantum dot structure, and the light-transmitting structure away from the transparent substrate to form an adhesive layer, and the surface of the adhesive structure does not exceed the surface of the groove structure.

14. The method for manufacturing a micro light emitting diode device according to any one of claims 10 to 13, characterized in that: The step of connecting the color conversion structure to the micro light emitting diode chip via the adhesive layer comprises: The color conversion structure is thermally pressed and bonded to the micro light emitting diode chip through the adhesive layer.

15. The method for manufacturing a micro light emitting diode device according to any one of claims 10 to 13, characterized in that: The production method further comprises: The transparent substrate is peeled off.

16. The method for manufacturing a micro light emitting diode device according to any one of claims 10 to 13, characterized in that: The production method further comprises: An encapsulation layer is formed on the sidewall of the color conversion structure, and the height of the encapsulation layer is smaller than or equal to the height of the color conversion structure.

17. A display device, characterized in that: A micro-light emitting diode device comprising the micro-light emitting diode device as claimed in any one of claims 1 to 9; or a micro-light emitting diode device prepared by the method for preparing a micro-light emitting diode device as claimed in any one of claims 10 to 16.

Images