Preparation method of single crystal perovskite laminated cell

Abstract

The invention discloses a preparation method of a single crystal perovskite laminated cell, which belongs to the technical field of solar cells and comprises a crystalline silicon bottom cell, a composite layer, a surface modification layer, a hole transport layer, a single crystal perovskite layer, a passivation layer, an electron transport layer, a hole barrier layer, a transparent conductive film layer, an antireflection layer and a metal electrode. When a single crystal perovskite layer is prepared on a hole transport layer, a perovskite precursor solution is dropwise added on a substrate coated with the hole transport layer at room temperature, and another hole transport layer material with a phosphoric acid group is used for sealing, so that space-limited inverse temperature crystallization is carried out; and the monocrystalline perovskite top cell is prepared on the crystalline silicon bottom cell, so that the problems of many perovskite film defect holes and short cell service life in the existing polycrystalline perovskite laminated cell are solved. The single crystal perovskite can realize uniform crystallization and compact growth, has no crystal boundary, and plays a role in preventing ion migration and water and oxygen invasion in the perovskite.

Description

Technical Field

[0001] The present invention relates to the technical field of solar cells, and more specifically, to a method for preparing a single crystal perovskite stacked cell. Background Art

[0002] Crystalline silicon cells have always been the main force of the photovoltaic industry. The improvement of cell conversion efficiency is also driving the reduction of levelized electricity costs. However, the conversion efficiency of crystalline silicon cells has gradually reached a bottleneck and it is difficult to improve it on a large scale. The tandem cells formed by connecting crystalline silicon cells and perovskite cells in series are considered to be a new technical route because of their theoretical efficiency exceeding 40%. Hybrid halide perovskites have the characteristics of high light absorption intensity, long diffusion length, and adjustable band gap, and are ideal materials for preparing top cells of tandem solar cells. In recent years, people have made a lot of efforts to improve the efficiency of crystalline silicon perovskite solar cells, including composition adjustment, device structure design, process optimization, and composite layer optimization. At present, the highest certified efficiency of tandem cells has reached 34.6%, far exceeding single-junction perovskite cells and crystalline silicon cells.

[0003] Although tandem cells have achieved good results in efficiency, their stability has restricted their industrialization progress. Currently, crystalline silicon / perovskite tandem cells are all prepared using polycrystalline perovskite. Ion migration and water and oxygen intrusion in polycrystalline perovskite cause the film to be easily decomposed and the battery life to be short. At the same time, the polycrystalline perovskite film is formed by reaction on the crystalline silicon bottom cell substrate, and there will be problems with the order of reaction, resulting in uneven crystallization and easy formation of defect holes in the film.

[0004] To this end, a method for preparing a single crystal perovskite tandem battery is proposed. Summary of the invention

[0005] In view of the problems existing in the prior art, the object of the present invention is to provide a method for preparing a single crystal perovskite stacked battery, which can extend the battery life.

[0006] To solve the above problems, the present invention adopts the following technical solutions.

[0007] A method for preparing a single crystal perovskite stacked cell, comprising a crystalline silicon bottom cell; and further comprising the following steps:

[0008] S1, magnetron sputtering a composite layer on a crystalline silicon bottom cell substrate;

[0009] S2, spin coating a surface modification layer on the composite layer;

[0010] S3, spin coating a hole transport layer on the surface modification layer;

[0011] S4, coating a perovskite solution on the hole transport layer, and growing a single crystal perovskite layer by inversion crystallization using a spatial confinement method;

[0012] S5, spin coating a passivation layer on the single crystal perovskite layer;

[0013] S6, evaporating an electron transport layer on the passivation layer;

[0014] S7, atomically depositing a hole blocking layer on the electron transport layer;

[0015] S8, magnetron sputtering a transparent conductive thin film layer on the hole blocking layer;

[0016] S9, evaporating an anti-reflection layer on the transparent conductive film layer;

[0017] S10, evaporating a metal electrode on the anti-reflection layer.

[0018] The single crystal perovskite stacked cell includes, from bottom to top, a crystalline silicon bottom cell, a composite layer, a surface modification layer, a hole transport layer, a single crystal perovskite layer, a passivation layer, an electron transport layer, a hole blocking layer, a transparent conductive film layer, an anti-reflection layer, and a metal electrode;

[0019] When preparing a single crystal perovskite layer on a hole transport layer, a perovskite precursor solution is dripped onto a substrate coated with a hole transport layer at room temperature and sealed with another hole transport layer material having a phosphate group for space-restricted inversion crystallization. The heating temperature is rapidly raised to 100°C within 1 hour, and then slowly raised to 120°C at a rate of 1°C / h to induce nucleation and growth to obtain a single crystal perovskite layer. The concentration of the single crystal perovskite layer solution is 1.4-2M, and the composition of the single crystal perovskite layer solution is FA x Cs y MA 1-x-y Pb(I a Br b Cl 1-a-b )3.

[0020] Furthermore, the band gap of the single crystal perovskite cell is 1.5 eV-1.7 eV.

[0021] Furthermore, the crystalline silicon bottom cell is any one of HJT, Topcon and PERC.

[0022] Further, the thickness of the composite layer is 4-40nm;

[0023] The thickness of the surface modification layer is 5-20 nm;

[0024] The thickness of the hole transport layer is 5nm-30nm.

[0025] Further, the thickness of the single crystal perovskite layer is 1 μm-30 μm;

[0026] The thickness of the passivation layer is 0.5-5nm;

[0027] The thickness of the electron transport layer is 5-30 nm;

[0028] The thickness of the hole blocking layer is 5-20 nm.

[0029] Furthermore, the thickness of the transparent conductive film layer is 40-120 nm;

[0030] The thickness of the anti-reflection layer is 40-150nm;

[0031] The thickness of the metal electrode is 80-500nm.

[0032] Furthermore, the composite layer is any one of ITO, IZO, IWO, and VTTO;

[0033] The surface modification layer is any one of NiO, Al2O3, and ZnO;

[0034] The hole transport layer is a Meo-2PACz or Me-4PAC hole transport layer containing phosphoric acid groups.

[0035] Furthermore, the passivation layer is any one of PI, PEAI, EDAI2, LiF, and MgF2;

[0036] The electron transport layer is C 60 , PCBM, SnO2;

[0037] The hole blocking layer is any one of SnO2 and BCP.

[0038] Furthermore, the transparent conductive film layer is any one of ITO, IZO, IWO, and VTTO;

[0039] The anti-reflection layer is any one of LiF, MgF2, and PMMA;

[0040] The metal electrode is any one of Au, Ag, Cu and Al.

[0041] Compared with the prior art, the present invention has the following beneficial effects:

[0042] This solution solves the problem of many defects and holes in the perovskite film and short battery life in the existing polycrystalline perovskite stacked cells by preparing a single crystal perovskite top cell on a crystalline silicon bottom cell. Single crystal perovskite can achieve uniform crystallization and dense growth, and has no grain boundaries, which prevents ion migration and water and oxygen intrusion in the perovskite. BRIEF DESCRIPTION OF THE DRAWINGS

[0043] Figure 1 The present invention is a flow chart for preparing single crystal perovskite tandem cells. DETAILED DESCRIPTION

[0044] The technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention; it is obvious that the described embodiments are only part of the embodiments of the present invention, rather than all the embodiments, and all other embodiments obtained by ordinary technicians in this field based on the embodiments of the present invention without making creative work are within the scope of protection of the present invention.

[0045] Embodiment 1:

[0046] See also Figure 1 , a method for preparing a single crystal perovskite stacked cell, comprising a crystalline silicon bottom cell; and further comprising the following steps:

[0047] S1, magnetron sputtering a composite layer on a crystalline silicon bottom cell substrate;

[0048] S2, spin coating a surface modification layer on the composite layer;

[0049] S3, spin coating a hole transport layer on the surface modification layer;

[0050] S4, coating a perovskite solution on the hole transport layer, and growing a single crystal perovskite layer by inversion crystallization using a spatial confinement method;

[0051] S5, spin coating a passivation layer on the single crystal perovskite layer;

[0052] S6, evaporating an electron transport layer on the passivation layer;

[0053] S7, atomically depositing a hole blocking layer on the electron transport layer;

[0054] S8, magnetron sputtering a transparent conductive thin film layer on the hole blocking layer;

[0055] S9, evaporating an anti-reflection layer on the transparent conductive film layer;

[0056] S10, evaporating a metal electrode on the anti-reflection layer.

[0057] When preparing a single crystal perovskite layer on a hole transport layer, a perovskite precursor solution is dripped onto a substrate coated with a hole transport layer at room temperature and sealed with another hole transport layer material having a phosphate group for space-restricted inversion crystallization. The heating temperature is rapidly raised to 100°C within 1 hour, and then slowly raised to 120°C at a rate of 1°C / h to induce nucleation and growth to obtain a single crystal perovskite layer. The concentration of the single crystal perovskite layer solution is 1.4-2M, and the composition of the single crystal perovskite layer solution is FA x Csy MA 1-x-y Pb(I a Br b Cl 1-a-b )3.

[0058] like Figure 1 As shown, the band gap of the single crystal perovskite cell is 1.5eV-1.7eV.

[0059] like Figure 1 As shown, the crystalline silicon bottom cell is any one of HJT, Topcon, and PERC.

[0060] like Figure 1 As shown, the thickness of the composite layer is 4-40nm;

[0061] The thickness of the surface modification layer is 5-20 nm;

[0062] The thickness of the hole transport layer is 5nm-30nm.

[0063] like Figure 1 As shown, the thickness of the single crystal perovskite layer is 1 μm-30 μm;

[0064] The thickness of the passivation layer is 0.5-5nm;

[0065] The thickness of the electron transport layer is 5-30 nm;

[0066] The thickness of the hole blocking layer is 5-20 nm.

[0067] like Figure 1 As shown, the thickness of the transparent conductive film layer is 40-120nm;

[0068] The thickness of the anti-reflection layer is 40-150nm;

[0069] The thickness of the metal electrode is 80-500nm.

[0070] like Figure 1 As shown, the composite layer is any one of ITO, IZO, IWO, and VTTO;

[0071] The surface modification layer is any one of NiO, Al2O3, and ZnO;

[0072] The hole transport layer is a Meo-2PACz or Me-4PAC hole transport layer containing phosphoric acid groups.

[0073] like Figure 1 As shown, the passivation layer is any one of PI, PEAI, EDAI2, LiF, and MgF2;

[0074] The electron transport layer is C 60 , PCBM, SnO2;

[0075] The hole blocking layer is any one of SnO2 and BCP.

[0076] like Figure 1 As shown, the transparent conductive film layer is any one of ITO, IZO, IWO, and VTTO;

[0077] The anti-reflection layer is any one of LiF, MgF2, and PMMA;

[0078] The metal electrode is any one of Au, Ag, Cu and Al.

[0079] The above is only a preferred specific implementation of the present invention; however, the protection scope of the present invention is not limited thereto. Any technician familiar with the technical field can make equivalent replacements or changes according to the technical solution and its improved conception within the technical scope disclosed by the present invention, which should be covered by the protection scope of the present invention.

Claims

1. A method for preparing a single crystal perovskite tandem cell, comprising a crystalline silicon bottom cell; characterized in that: The following steps are also included: S1, magnetron sputtering a composite layer on a crystalline silicon bottom cell substrate; S2, spin coating a surface modification layer on the composite layer; S3, spin coating a hole transport layer on the surface modification layer; S4, coating a perovskite solution on the hole transport layer, and growing a single crystal perovskite layer by inversion crystallization using a spatial confinement method; S5, spin coating a passivation layer on the single crystal perovskite layer; S6, evaporating an electron transport layer on the passivation layer; S7, atomically depositing a hole blocking layer on the electron transport layer; S8, magnetron sputtering a transparent conductive thin film layer on the hole blocking layer; S9, evaporating an anti-reflection layer on the transparent conductive film layer; S10, evaporating a metal electrode on the anti-reflection layer.

2. The method for preparing a single crystal perovskite tandem battery according to claim 1, characterized in that: The band gap of the single crystal perovskite cell is 1.5 eV-1.7 eV.

3. The method for preparing a single crystal perovskite tandem battery according to claim 1, characterized in that: The crystalline silicon bottom cell is any one of HJT, Topcon and PERC.

4. The method for preparing a single crystal perovskite tandem battery according to claim 1, characterized in that: The thickness of the composite layer is 4-40nm; The thickness of the surface modification layer is 5-20 nm; The thickness of the hole transport layer is 5nm-30nm.

5. The method for preparing a single crystal perovskite tandem battery according to claim 1, characterized in that: The thickness of the single crystal perovskite layer is 1 μm-30 μm; The thickness of the passivation layer is 0.5-5nm; The thickness of the electron transport layer is 5-30 nm; The thickness of the hole blocking layer is 5-20 nm.

6. The method for preparing a single crystal perovskite tandem battery according to claim 1, characterized in that: The thickness of the transparent conductive film layer is 40-120nm; The thickness of the anti-reflection layer is 40-150nm; The thickness of the metal electrode is 80-500nm.

7. The method for preparing a single crystal perovskite tandem battery according to claim 1, characterized in that: The composite layer is any one of ITO, IZO, IWO, and VTTO; The surface modification layer is any one of NiO, Al2O3, and ZnO; The hole transport layer is a Meo-2PACz or Me-4PAC hole transport layer containing phosphoric acid groups.

8. The method for preparing a single crystal perovskite tandem battery according to claim 1, characterized in that: The passivation layer is any one of PI, PEAI, EDAI2, LiF, and MgF2; The electron transport layer is C 60 , PCBM, SnO2; The hole blocking layer is any one of SnO2 and BCP.

9. The method for preparing a single crystal perovskite tandem battery according to claim 1, characterized in that: The transparent conductive film layer is any one of ITO, IZO, IWO and VTTO; The anti-reflection layer is any one of LiF, MgF2, and PMMA; The metal electrode is any one of Au, Ag, Cu and Al.

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