Preparation method of silicon-based OLED (Organic Light Emitting Diode) micro display

Abstract

The invention relates to the technical field of organic light-emitting display, and discloses a preparation method of a silicon-based OLED micro-display, which comprises the following steps: S1, cleaning a silicon-based CMOS driving circuit substrate containing an electrode, and removing surface pollutants; s2, performing plasma surface treatment on the substrate through argon, nitrogen or oxygen; s3, forming a molecular layer on the surface of the electrode through a self-assembly monomolecular layer technology; s4, depositing a protective film material on the surface of the treated electrode through a solution deposition method; s5, the protective film is removed through laser etching, and the surface of the electrode is exposed; and S6, cleaning and patterning the electrode by using a developing solution, and further carrying out electrode welding. The surface of the electrode is treated by adopting a self-assembly monomolecular layer technology, and the polarity and the adhesive force of the surface of the electrode can be remarkably enhanced through modification of an amino silane solution, so that the bonding strength among all layers of materials is improved.

Description

Technical Field

[0001] The invention relates to the technical field of organic light-emitting display, and in particular to a method for preparing a silicon-based OLED microdisplay. Background Art

[0002] With the continuous development of display technology, silicon-based OLED microdisplays have been widely used in many fields due to their high resolution, low power consumption and good display effects, such as virtual reality (VR), augmented reality (AR) devices and micro-displays. However, in the preparation process of silicon-based OLED microdisplays, the preparation and protection of electrodes, patterning and subsequent electrical connections still face many technical challenges. Especially in the process of electrode surface treatment and protective film removal, the traditional multi-step process has certain limitations, resulting in low process efficiency, high cost, low yield and other problems.

[0003] In the preparation of traditional silicon-based OLED microdisplays, electrode surface treatment and patterning are very critical steps. Usually, the electrode surface needs to be cleaned, patterned, and the protective film is removed. In the prior art, chemical lithography, wet etching and other means are used to remove the electrode surface protective film. Although these methods are effective, they have certain problems. First, corrosive solutions such as strong acids and alkalis are often used in chemical lithography and wet etching, which will not only damage the substrate, but also may cause insufficient adhesion between the electrode and subsequent materials, affecting the stability of the device. Secondly, the wet etching process is difficult to achieve high-precision patterning, and is easily affected by the external environment (such as moisture, temperature, etc.), resulting in large process fluctuations, which in turn affects the preparation quality and production efficiency of the device.

[0004] In terms of the bonding between electrodes and materials such as protective films or photoresists, although traditional surface treatment methods, such as plasma treatment and chemical modification, can improve electrode surface adhesion to a certain extent, the effects of these methods are not long-lasting and may require additional subsequent processing steps. Therefore, how to effectively enhance the adhesion of the electrode surface and avoid peeling or falling off between material layers due to insufficient adhesion is still a technical problem that needs to be solved urgently. Summary of the invention

[0005] In view of the deficiencies in the prior art, the present invention provides a method for preparing a silicon-based OLED microdisplay, which solves the problems of uneven removal of the electrode protective film, insufficient adhesion and unstable welding in the prior preparation process.

[0006] To achieve the above objectives, the present invention is implemented by the following technical scheme: A method for preparing a silicon-based OLED microdisplay comprises the following steps:

[0007] S1, cleaning the silicon-based CMOS driving circuit substrate including the electrode to remove surface contaminants;

[0008] S2, performing plasma surface treatment on the substrate by using argon, nitrogen or oxygen gas;

[0009] S3, forming a molecular layer on the electrode surface by self-assembled monolayer technology;

[0010] S4, depositing a protective film material on the treated electrode surface by a solution deposition method;

[0011] S5, removing the protective film by laser etching to expose the electrode surface;

[0012] S6. Cleaning and patterning the electrodes using a developer, and further performing electrode welding.

[0013] Preferably, the protective film material in step S4 includes but is not limited to polyimide or polyurethane; the thickness of the deposited film is 30nm-50nm.

[0014] Preferably, in the step S2, the gas flow rate is controlled at 10 sccm-20 sccm, the processing time is 30S-60S, and the processing pressure is controlled at 0.2Pa-0.5Pa.

[0015] Preferably, the concentration of the aminosilane solution in the self-assembled monolayer modification process in step S3 is controlled at 0.05M-0.1M, the immersion time is 30min-60min, and after the modification is completed, it is washed with deionized water and dried.

[0016] Preferably, in the step S4, the film deposition process is spin coating, the spin coating rate is 1500rpm-1700rpm, and the spin coating time is 30s-100s.

[0017] Preferably, the developer is applied in step S6 by manual coating or immersion, a neutral solution is used as the developer, the concentration of the developer is 0.05M-0.1M, and the developing time is controlled to be 30s-60s.

[0018] Preferably, the cleaning method in step S1 comprises cleaning with one or more of acetone, isopropanol and deionized water.

[0019] Preferably, the laser etching in step S5 uses an ultraviolet laser with a wavelength of 355 nm, a laser power of 10 mJ-20 mJ, a scanning speed of 50 mm / s-100 mm / s, and a scanning number of 3-5 times.

[0020] Preferably, in step S2, the processing temperature of the substrate is controlled between 50°C and 100°C.

[0021] Preferably, the electrode welding in step S6 adopts metal welding technology, the welding temperature is 150° C.-180° C., the welding time is 5 min-10 min, and the welding material is lead-free solder.

[0022] The present invention provides a method for preparing a silicon-based OLED microdisplay, which has the following beneficial effects:

[0023] 1. The present invention uses self-assembled monolayer technology to treat the electrode surface. By modifying the electrode surface with an aminosilane solution, the polarity and adhesion of the electrode surface can be significantly enhanced, which not only ensures good adhesion between the electrode and subsequent protective films, photoresists and other materials, but also improves the bonding strength between the layers of materials, thereby avoiding interlayer peeling or material shedding due to insufficient adhesion in subsequent processes.

[0024] 2. Compared with the traditional multi-step complex process, the self-assembled monolayer modification, developer treatment, laser etching and metal welding technologies of the present invention have a simpler operation process and higher process stability. By reducing the reliance on complex steps and automated equipment, the present invention not only improves production efficiency, but also effectively reduces manufacturing costs. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] Figure 1 It is a schematic diagram of the preparation method steps of the present invention. DETAILED DESCRIPTION

[0026] The technical solution of the present invention will be described clearly and completely below in conjunction with the accompanying drawings of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0027] Example:

[0028] Please see attached Figure 1 The present invention provides a method for preparing a silicon-based OLED microdisplay, comprising the following steps:

[0029] S1. Cleaning a silicon-based CMOS driving circuit substrate including electrodes to remove surface contaminants; the cleaning method comprises using one or more of acetone, isopropyl alcohol and deionized water for cleaning.

[0030] Specifically, in the preparation process of silicon-based OLED microdisplays, cleaning the substrate is a key step to ensure the smooth progress of subsequent processes, especially for silicon-based CMOS drive circuit substrates containing electrodes. Since there may be various pollutants on the substrate surface, including residual organic matter, metal ions, dust and other particles, these pollutants will directly affect subsequent thin film deposition, patterning, and electrode connection processes. Therefore, thorough cleaning of the substrate surface is a prerequisite for ensuring device performance and yield.

[0031] The cleaning process usually uses multi-step solvent immersion, ultrasonic cleaning and other methods to remove various contaminants. The specific steps are as follows:

[0032] First, use acetone to perform preliminary cleaning on the surface of the substrate. Acetone is a common organic solvent with a strong ability to dissolve organic matter. It can effectively remove oil stains, residual organic pollutants and other organic matter attached to the electrode surface. The substrate should be immersed in the acetone solution, and the immersion time is usually controlled within 3 to 5 minutes to ensure that the organic pollutants are completely removed. For some particularly stubborn contamination, an ultrasonic cleaner can also be used for auxiliary cleaning to further improve the cleaning effect.

[0033] After the acetone cleaning, the substrate will then be cleaned with isopropyl alcohol. Isopropyl alcohol can not only effectively remove organic matter that may remain after the acetone cleaning, but also further dissolve other contaminants that may exist on the electrode surface, such as residual flux or fingerprint oil stains on the surface. Isopropyl alcohol can evaporate quickly to avoid the cleaning solution from remaining on the substrate surface, and its cleaning effect is mild, making it suitable for cleaning electronic components. The cleaning process can be carried out by soaking or wiping with a non-woven cloth to ensure that all surface contamination is removed.

[0034] Finally, use deionized water for rinsing. Deionized water has a high degree of purity and can effectively remove residual solvent components (such as acetone and isopropanol) on the substrate to prevent the residual solvent from affecting subsequent processes. The use of deionized water can not only clean the solvent residues on the surface of the substrate, but also remove possible ionic contaminants. If these ionic contaminants are not removed, they may have an adverse effect on the performance of the device, especially during electrode connection and thin film deposition. The rinsing process usually needs to be performed multiple times to ensure thorough cleaning. After cleaning, the substrate surface should be blown dry with nitrogen to prevent water droplets from remaining.

[0035] Temperature control is also crucial during the entire cleaning process. Too high a temperature may cause some solvents to evaporate too quickly or affect the stability of the substrate material, so cleaning should be performed at room temperature or within an appropriate temperature range. Normally, the ambient temperature for substrate cleaning is controlled between room temperature and 40°C. In order to ensure uniform cleaning, spin coating or immersion can also be used to ensure that every area on the substrate surface is evenly exposed to the cleaning solution.

[0036] After cleaning, the substrate surface is inspected by a microscope or surface analysis instrument (such as XPS or SEM) to verify whether all contaminants on the clean surface have been removed and to ensure that there are no particles or solvent residues. Especially for micron-level electrodes and other fine structures, the substrate surface after cleaning is required to be free of pollution, oil and clean.

[0037] S2. Plasma surface treatment is performed on the substrate using argon, nitrogen or oxygen gas; the gas flow rate is controlled at 10sccm-20sccm, the treatment time is 30S-60S, and the treatment pressure is controlled at 0.2Pa-0.5Pa. The treatment temperature of the substrate is controlled between 50℃-100℃.

[0038] Specifically, in the preparation process of silicon-based OLED microdisplays, plasma surface treatment is a key step to improve the performance of subsequent processes, especially for silicon-based CMOS drive circuit substrates containing electrodes. The main purpose of this step is to change the chemical and physical properties of the substrate surface through the action of plasma, thereby enhancing the adhesion between subsequent materials (such as protective films, photoresists, etc.) and the substrate, while removing surface pollutants or oxide layers to ensure the stability and effectiveness of subsequent processes. The gases used in plasma surface treatment generally include argon (Ar), nitrogen (N2) and oxygen (O2), of which argon is mainly used to remove surface dust and pollutants, nitrogen is used to prevent oxidation, and oxygen helps to increase the polarity and cleanliness of the substrate surface. In this process, the gas flow rate is controlled at 10sccm to 20sccm, the processing time is 30 seconds to 60 seconds, and the processing pressure is controlled between 0.2Pa and 0.5Pa to ensure the stability and uniformity of the plasma. At the same time, the processing temperature of the substrate should be controlled between 50℃ and 100℃ to avoid high temperature damage to the substrate material and ensure the optimality of the surface activation effect. After plasma treatment, the substrate surface will have higher surface energy and polarity, which will improve the adhesion of subsequent materials, remove organic pollutants and oxides, and increase the micro-roughness of the surface, thereby providing an ideal foundation for subsequent protective film deposition, electrode connection and photolithography processes, ensuring high quality and high stability of the entire manufacturing process.

[0039] S3. Form a molecular layer on the electrode surface by using the self-assembled monolayer technology. The concentration of the aminosilane solution in the modification process of the self-assembled monolayer technology is controlled at 0.05M-0.1M, and the immersion time is 30min-60min. After the modification is completed, it is washed with deionized water and dried.

[0040] Specifically, in the present invention, the self-assembled monolayer technology modifies the electrode surface through an aminosilane solution. Aminosilane molecules have dual functions: on the one hand, the silane group can react chemically with the electrode surface to ensure the firm bonding of the molecular layer; on the other hand, the amino group has strong hydrophilicity and polarity, which can provide stronger adhesion for subsequent materials (such as protective films).

[0041] In the specific implementation, the surface of the electrode substrate is first cleaned to remove surface contaminants. Next, the aminosilane solution is prepared, and the solution concentration is controlled between 0.05M and 0.1M. Within this concentration range, aminosilane can effectively form a stable monolayer, ensuring the treatment effect while avoiding uneven deposition or excessively thick surface film caused by excessive concentration. Subsequently, the substrate is immersed in the aminosilane solution, and the immersion time is controlled between 30 minutes and 60 minutes. The duration of this process needs to ensure that the molecular layer can fully self-assemble and evenly cover the entire electrode surface. After completing the self-assembly process, the substrate should be thoroughly washed with deionized water to remove unreacted aminosilane and solvent residues to ensure that the surface is clean and free of impurities. Finally, the stability of the molecular layer and the dry state of the substrate surface are ensured by air drying or drying in an environment of **50℃ to 60℃**.

[0042] Through this method, a uniform and stable self-assembled monolayer will be formed on the electrode surface, which not only increases the polarity and hydrophilicity of the surface, but also enhances the adhesion of subsequent materials, providing ideal surface conditions for further thin film deposition and device manufacturing. In addition, the aminosilane-modified monolayer can improve the compatibility between the electrode surface and other materials, effectively preventing performance degradation caused by surface contamination or oxidation.

[0043] S4. Depositing a protective film material on the treated electrode surface by solution deposition; the protective film material includes but is not limited to polyimide or polyurethane; the thickness of the deposited film is 30nm-50nm. The film layer deposition process is spin coating, the spin coating rate is 1500rpm-1700rpm, and the spin coating time is 30s-100s.

[0044] Specifically, in the present invention, the protective film material includes but is not limited to polyimide (PI) and polyurethane (PU). Polyimide has good thermal stability, mechanical strength and chemical resistance, and is usually used in high-performance devices, especially suitable for high-temperature and long-term use environments.

[0045] Polyurethane, another common protective film material, has excellent flexibility, water resistance and electrical insulation, and is suitable for displays that require certain flexibility or special properties.

[0046] The deposition of the protective film adopts a solution deposition method, which forms a film layer by uniformly coating a polyimide or polyurethane material in a solution onto the electrode surface. The solution deposition method has high adaptability and flexibility, can form a uniform film layer on a large-area substrate, and is simple to operate and low in cost. In this step, the thickness of the film layer is controlled between 30nm and 50nm. This thickness range can ensure that the protective film provides sufficient physical protection while not affecting the performance of subsequent deposited layers or device structures.

[0047] During the deposition process, spin coating technology is used to achieve uniform coating of the film layer. Spin coating technology is to drip a liquid solution onto the surface of a substrate, and then rotate the substrate at high speed so that the solution is evenly distributed under the action of centrifugal force to form a thin film. The rate and time of spin coating are key parameters that determine the uniformity, thickness and quality of the film layer. In this step, the spin coating rate is controlled between 1500rpm and 1700rpm, and this speed range can ensure that the film layer is evenly coated and maintains an appropriate film thickness. The spin coating time is controlled between 30 seconds and 100 seconds. If the time is too short, the film layer may be uneven, and if the time is too long, the solvent may evaporate too quickly, affecting the quality and adhesion of the film layer.

[0048] During the preparation of the solution, choosing the right solvent is crucial to the quality of the protective film. Common solvents include N-methylpyrrolidone, toluene, etc. These solvents can effectively dissolve polyimide or polyurethane and form a uniform film layer during the spin coating process. After spin coating, the substrate needs to be properly heat treated to remove the solvent and promote the curing of the film layer to ensure the stability and strength of the film layer.

[0049] The protective film deposited by spin coating usually has good flatness and smoothness, but in order to ensure good adhesion between the film layer and the electrode surface, the substrate after spin coating should be annealed. The annealing process is generally carried out at a temperature of **100℃ to 150℃** and lasts for about 30 minutes to 1 hour. This process can help the film layer solidify, enhance the bonding force between the film layer and the electrode surface, and reduce the peeling or warping problem of the film layer in subsequent processes.

[0050] After deposition is completed, the film thickness, uniformity and flatness are checked using scanning electron microscopes, atomic force microscopes and other equipment. These inspection methods can ensure that the film meets the design requirements and has uniform thickness and a defect-free surface.

[0051] S5. Remove the protective film by laser etching to expose the electrode surface; the laser etching uses an ultraviolet laser with a wavelength of 355nm, a laser power of 10mJ-20mJ, a scanning speed of 50mm / s-100mm / s, and a scanning number of 3-5 times.

[0052] Specifically, in the preparation process of silicon-based OLED microdisplays, the removal of the protective film is a crucial step, especially in the connection and circuit formation process between the electrode and the OLED layer. The protective film is mainly used to protect the electrode from pollution and external environmental influences, but in subsequent processes, the protective film needs to be removed to ensure that the electrode area can be well combined with other materials (such as OLED light-emitting layer, contact layer, etc.). Laser etching technology has become an ideal choice for removing protective films due to its high precision and local removal characteristics.

[0053] Laser etching irradiates the protective film surface with an ultraviolet laser beam, causing the film material to evaporate or decompose locally under the high energy of the laser, thereby removing the unnecessary protective film and accurately exposing the electrode surface. Compared with chemical etching or mechanical scraping, laser etching has the advantages of non-contact, precision, and high speed, and is particularly suitable for processing high-precision microstructures.

[0054] The laser etching process uses a 355nm ultraviolet laser, which can effectively interact with the protective film material and is particularly suitable for precise etching of organic protective films such as polyimide (PI) and polyurethane (PU). The 355nm ultraviolet laser has high energy and can concentrate energy on the surface of the protective film, causing it to evaporate quickly without affecting the substrate or electrode layer.

[0055] The laser power is controlled between 10mJ and 20mJ. Moderate laser power can ensure that the laser beam can efficiently remove the film layer while avoiding damage to the substrate or electrode caused by excessive power during the process of removing the protective film. Too low power may lead to incomplete etching, while too high power may cause excessive ablation or damage to the substrate surface.

[0056] The scanning speed is between 50mm / s and 100mm / s, which determines the speed at which the laser moves on the substrate surface. When the scanning speed is low, the laser irradiation time is longer, which can more effectively remove thicker film layers, but too slow a speed will increase the process time and affect production efficiency; too fast a scanning speed may cause incomplete or uneven etching. Therefore, a reasonable scanning speed helps to improve etching efficiency and uniformity of film removal.

[0057] The number of laser etching scans is controlled between 3 and 5 times. Each scan can remove a portion of the film layer, and multiple scans help to remove the film layer by layer. Check the removal effect after each scan to ensure that the film layer is completely removed without damaging the electrode. Too many scans may increase the processing time and may affect the electrode, while too few scans may not completely remove the protective film.

[0058] In actual operation, the laser beam is focused by a precise optical system and irradiated onto the surface of the protective film, forming tiny heat treatment areas. During each scan, the laser beam scans line by line along a preset trajectory to ensure uniform removal of the protective film. Each scanned laser beam forms tiny heating areas on the surface, which evaporate or ablate the film material to form tiny holes, thereby removing the protective film. By adjusting the scanning parameters, the removal area of ​​the film layer can be precisely controlled to avoid excessive impact on the electrode layer.

[0059] Through laser etching, the protective film is completely removed in the electrode area, exposing the electrode surface and preparing for subsequent contact layer deposition, welding or other processes. Due to the high-precision control of the laser, the exposure of the electrode area can be done very accurately, avoiding damage to the electrode itself.

[0060] The uniformity of laser etching is crucial for subsequent processes. By properly controlling the laser power, scanning speed, and number of scans, the uniformity of film removal can be ensured to avoid film residue and local damage.

[0061] Laser etching is non-contact, thus avoiding contamination or physical damage that may be introduced during mechanical scraping. In addition, the focusing characteristics of the UV laser enable it to effectively and accurately remove the protective film without causing significant thermal damage to the electrode layer, ensuring the smooth progress of subsequent processes.

[0062] S6. Use developer to clean and pattern the electrode, and further perform electrode welding; the developer is applied by manual coating or immersion, the developer is a neutral solution, the concentration of the developer is 0.05M-0.1M, and the development time is controlled to be 30s-60s. Electrode welding uses metal welding technology, the welding temperature is 150℃-180℃, the welding time is 5min-10min, and the welding material is lead-free solder.

[0063] Specifically, in the preparation process of silicon-based OLED microdisplays, electrode cleaning and patterning are key steps to ensure electrode surface quality and good electrical contact. The developer can not only remove excess material, but also form the required electrode pattern on the substrate surface, providing a reliable basis for subsequent electrode connection and welding. In this step, the use of the developer combined with electrode welding ensures that the electrode surface is clean, the pattern is clear, and is ready for the final welding.

[0064] Developer is usually used in the development process of photolithography. Its main function is to remove photoresist or other temporary patterning materials to form the desired pattern or exposure area on the substrate. For electrode processing, developer not only helps to remove surface contaminants, but also forms a clear pattern on the electrode for subsequent electrode welding or other process operations.

[0065] The choice of developer needs to be determined according to the electrode material and patterning requirements. In this step, the developer uses a neutral solution with a concentration controlled between 0.05M and 0.1M. The neutral solution can effectively clean the electrode surface while avoiding corrosion to the substrate or electrode material. Within this concentration range, the developer can remove unwanted materials and form a stable pattern on the substrate while protecting the electrode from excessive corrosion.

[0066] The developer can be applied by manual coating or immersion. Manual coating is usually used for smaller substrates or when the coating amount needs to be precisely controlled, while the immersion method is suitable for the development of large-area substrates to ensure that the developer evenly covers the entire surface. The immersion time is controlled to be 30 seconds to 60 seconds, which ensures that the developer effectively acts on the electrode surface while avoiding overexposure or corrosion.

[0067] After development, the substrate should be cleaned with deionized water to remove the developer residue and ensure a clean surface. After cleaning, the substrate can be blown dry with nitrogen to ensure that there is no moisture left, which is critical for the subsequent welding steps to avoid the influence of moisture on the welding quality.

[0068] Electrode welding is an important step in the preparation of the entire silicon-based OLED microdisplay, which involves connecting the electrodes to the external circuit to realize the function of the display. The quality of welding directly affects the electrical performance and long-term stability of the display, so precise control of the welding process is crucial.

[0069] Electrode welding uses metal welding technology, which is commonly used in the assembly process of electronic components to ensure good electrical contact and stable connection. Metal welding technology uses solder to form a strong connection on the electrode surface, and usually uses lead-free solder to meet environmentally friendly and environmentally friendly requirements.

[0070] The welding temperature is controlled between 150℃ and 180℃. Too low a temperature may result in poor welding and unstable electrical connection; too high a temperature may cause thermal damage to the electrode or substrate. The welding time is usually controlled between 5 minutes and 10 minutes to ensure that the solder can be fully melted and form a reliable welding connection on the electrode surface. Too short a welding time may result in incomplete welding, while too long a time may damage the electrode or affect the stability of other materials.

[0071] Lead-free solder is used for welding, which meets environmental protection standards and avoids the potential harm of traditional lead solder to the environment and human body. Lead-free solder is usually composed of tin, copper, silver and other elements, has good conductivity and mechanical strength, and can form a stable connection at a certain temperature.

[0072] After welding, the welds need to be inspected to ensure that the electrical connection is good and there are no cold joints or short circuits. Common inspection methods include visual inspection, X-ray inspection, and electrical performance testing. Electrical performance testing can ensure the electrical conductivity of the weld by measuring the current and resistance between the electrode and the circuit.

[0073] Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions and variations may be made to the embodiments without departing from the principles and spirit of the present invention, and that the scope of the present invention is defined by the appended claims and their equivalents.

Claims

1. A method for preparing a silicon-based OLED microdisplay, characterized in that: The following steps are involved: S1, cleaning the silicon-based CMOS driving circuit substrate including the electrode to remove surface contaminants; S2, performing plasma surface treatment on the substrate by using argon, nitrogen or oxygen gas; S3, forming a molecular layer on the electrode surface by self-assembled monolayer technology; S4, depositing a protective film material on the treated electrode surface by a solution deposition method; S5, removing the protective film by laser etching to expose the electrode surface; S6. Cleaning and patterning the electrodes using a developer, and further performing electrode welding.

2. The method for preparing a silicon-based OLED microdisplay according to claim 1, characterized in that: The protective film material in step S4 includes but is not limited to polyimide or polyurethane; the thickness of the deposited film is 30nm-50nm.

3. The method for preparing a silicon-based OLED microdisplay according to claim 1, characterized in that: In the step S2, the gas flow rate is controlled at 10 sccm-20 sccm, the processing time is 30S-60S, and the processing pressure is controlled at 0.2Pa-0.5Pa.

4. The method for preparing a silicon-based OLED microdisplay according to claim 1, characterized in that: In the step S3, the concentration of the aminosilane solution in the self-assembled monolayer modification process is controlled at 0.05M-0.1M, the immersion time is 30min-60min, and after the modification is completed, it is washed with deionized water and dried.

5. The method for preparing a silicon-based OLED microdisplay according to claim 1, characterized in that: In the step S4, the film deposition process is spin coating, the spin coating rate is 1500rpm-1700rpm, and the spin coating time is 30s-100s.

6. The method for preparing a silicon-based OLED microdisplay according to claim 1, characterized in that: In the step S6, the developer is applied by manual coating or immersion, a neutral solution is used as the developer, the concentration of the developer is 0.05M-0.1M, and the developing time is controlled to be 30s-60s.

7. The method for preparing a silicon-based OLED microdisplay according to claim 1, characterized in that: The cleaning method in step S1 includes cleaning with one or more of acetone, isopropyl alcohol and deionized water.

8. The method for preparing a silicon-based OLED microdisplay according to claim 1, characterized in that: The laser etching in step S5 uses an ultraviolet laser with a wavelength of 355 nm, a laser power of 10 mJ-20 mJ, a scanning speed of 50 mm / s-100 mm / s, and a scanning number of 3-5 times.

9. The method for preparing a silicon-based OLED microdisplay according to claim 1, characterized in that: In the step S2, the processing temperature of the substrate is controlled between 50°C and 100°C.

10. The method for preparing a silicon-based OLED microdisplay according to claim 1, characterized in that: The electrode welding in step S6 adopts metal welding technology, the welding temperature is 150° C.-180° C., the welding time is 5 min-10 min, and the welding material is lead-free solder.

Images