Display device and method of manufacturing same

Abstract

The invention relates to a display device and a method of manufacturing the same. A display device includes: a first organic layer disposed on a substrate, and defining a first opening and a second opening spaced apart from the first opening in the first organic layer; and an auxiliary electrode disposed on a portion of the first organic layer between the first opening and the second opening, a third conductive layer disposed on the substrate and including a first conductive layer contacting a portion of the first organic layer, a second conductive layer disposed on the first conductive layer, and a third conductive layer disposed on the second conductive layer and having opposite ends thereof bent toward the substrate; a light emitting layer disposed on the first organic layer and the auxiliary electrode, in which portions of the light emitting layer are disconnected from each other by the auxiliary electrode; and a common electrode disposed on the light emitting layer, in which portions of the common electrode are disconnected from each other by the auxiliary electrode.

Description

Technical Field

[0001] Embodiments relate to a display device and a method of manufacturing the same, and more particularly, to a display device providing visual information and a method of manufacturing the same. Background Art

[0002] A display device is a device that displays an image for providing visual information to a user. Among display devices, an organic light emitting diode display device has recently attracted much attention.

[0003] Organic light emitting diode display devices have self-luminous properties, and unlike liquid crystal display devices, organic light emitting diode display devices do not require a separate light source, thereby reducing thickness and weight. In addition, organic light emitting diode display devices exhibit high quality characteristics such as low power consumption, high brightness, and high response speed. Recently, as organic light emitting diode display devices have become larger, there is a problem of poor display quality due to a voltage drop (IR drop) phenomenon. Summary of the invention

[0004] The embodiment provides a display device with improved display quality.

[0005] The embodiment provides a method of manufacturing a display device.

[0006] According to an embodiment, the display device includes: a first organic layer, which is arranged on a substrate and defines a first opening and a second opening spaced apart from the first opening; an auxiliary electrode, which is arranged on a portion of the first organic layer between the first opening and the second opening and includes a first conductive layer contacting a portion of the first organic layer, a second conductive layer arranged on the first conductive layer, and a third conductive layer arranged on the second conductive layer and having opposite ends bent toward the substrate; a light-emitting layer, which is arranged on the first organic layer and the auxiliary electrode, wherein portions of the light-emitting layer are disconnected from each other by the auxiliary electrode; and a common electrode, which is arranged on the light-emitting layer, wherein portions of the common electrode are disconnected from each other by the auxiliary electrode.

[0007] In an embodiment, a first inclination angle formed by a first tangent line tangent to the first end of the upper surface of the third conductive layer and a plane parallel to the main surface of the substrate may be substantially equal to a second inclination angle formed by a second tangent line tangent to the second end of the upper surface of the third conductive layer and a plane parallel to the main surface of the substrate.

[0008] In an embodiment, each of the first inclination angle and the second inclination angle may be about 10 degrees to about 150 degrees.

[0009] In an embodiment, the third conductive layer may form an undercut shape with the second conductive layer.

[0010] In an embodiment, portions of the light emitting layer may contact a portion of an upper surface of the first conductive layer and an upper surface of the third conductive layer, respectively, and the portions of the light emitting layer may be spaced apart from each other with a side surface of the second conductive layer between the portions of the light emitting layer.

[0011] In an embodiment, the common electrode may contact a portion of a side surface of the second conductive layer, and may overlap the light emitting layer contacting an upper surface of the third conductive layer.

[0012] In an embodiment, an upper surface of a portion of the first organic layer contacting the first conductive layer may have a curved surface.

[0013] In an embodiment, each of the first conductive layer and the third conductive layer may have a curved surface corresponding to the curved surface in a cross-sectional view.

[0014] In an embodiment, the first conductive layer, the second conductive layer, and the third conductive layer may include different materials from each other.

[0015] In an embodiment, the display device may further include: a transistor including an active layer disposed on the substrate, a gate electrode disposed on the active layer, and a source electrode and a drain electrode contacting the active layer; and a second organic layer disposed on the transistor and spaced apart from the auxiliary electrode.

[0016] In an embodiment, the auxiliary electrode may be disposed in the same layer as each of the source electrode and the drain electrode, and may include the same material as each of the source electrode and the drain electrode.

[0017] The method for manufacturing a display device includes: forming an inorganic insulating layer on a substrate; forming a first organic layer on the inorganic insulating layer, wherein a first opening and a second opening spaced apart from each other are defined in the first organic layer; forming a first conductive layer on the first organic layer; forming a second conductive layer on the first conductive layer; forming an auxiliary electrode on the second conductive layer by forming a third conductive layer whose opposite ends are bent toward the substrate; forming a light-emitting layer on the first organic layer and the auxiliary electrode, wherein portions of the light-emitting layer are disconnected from each other by the auxiliary electrode; and forming a common electrode on the light-emitting layer, wherein portions of the common electrode are disconnected from each other by the auxiliary electrode.

[0018] In an embodiment, the forming of the first organic layer may include: forming a preliminary organic layer on the inorganic insulating layer; exposing the first preliminary organic layer to light; and forming the first opening and the second opening by removing a portion of the preliminary organic layer via a developer.

[0019] In an embodiment, forming the auxiliary electrode may include: forming a metal layer filling the first opening and the second opening on the first organic layer; and simultaneously forming the source electrode, the drain electrode and the auxiliary electrode on the first organic layer by removing a portion of the metal layer.

[0020] In an embodiment, the formation of a metal layer may include: forming a first metal layer filling the first opening and the second opening on the first organic layer; forming a second metal layer including a material different from that of the first metal layer on the first metal layer; and forming a third metal layer including a material different from that of the second metal layer on the second metal layer.

[0021] In an embodiment, the first conductive layer may be formed by removing a portion of the first metal layer, the second conductive layer may be formed by removing a portion of the second metal layer, and the third conductive layer may be formed by removing a portion of the third metal layer.

[0022] In an embodiment, the formation of the light-emitting layer may include depositing a light-emitting material forming the light-emitting layer in a first deposition direction having a first inclination angle relative to a plane parallel to the main surface of the substrate, and the formation of the common electrode may include depositing a metal material forming the common electrode in a second deposition direction having a second inclination angle relative to a plane parallel to the main surface of the substrate.

[0023] In an embodiment, a line extending from one of opposite ends of the upper surface of the third conductive layer and parallel to the first deposition direction may not intersect a side surface of the second conductive layer.

[0024] In an embodiment, a line extending from one of opposite ends of the upper surface of the third conductive layer and parallel to the second deposition direction may intersect a side surface of the second conductive layer.

[0025] In an embodiment, the first inclination angle may be greater than the second inclination angle.

[0026] In a display device according to an embodiment, the display device may include an auxiliary electrode, the auxiliary electrode including: a first conductive layer; a second conductive layer disposed on the first conductive layer; and a third conductive layer disposed on the second conductive layer. In addition, the upper surface of the first conductive layer and the side surface of the second conductive layer may contact the common electrode. Therefore, since the auxiliary electrode can assist the action of the power line to which the first power supply voltage is applied, the voltage drop (IR drop) phenomenon can be reduced and the display quality can be improved.

[0027] In the method for manufacturing a display device according to an embodiment, by adjusting the incident angle of the metal material for depositing the third conductive layer whose opposite end is bent toward the substrate and the common electrode, the auxiliary electrode can be manufactured without a separate additional process. Therefore, the process time can be shortened and the process cost can be reduced. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] Illustrative, non-limiting embodiments will be more clearly understood from the following detailed description taken in conjunction with the accompanying drawings.

[0029] Figure 1 is a plan view illustrating a display device according to an embodiment of the present disclosure.

[0030] Figure 2 It is a cross-sectional view taken along line II'.

[0031] Figure 3 yes Figure 2 An enlarged cross-sectional view of area A in FIG.

[0032] Figure 4 , Figure 5 , Figure 6 , Figure 7 , Figure 8 , Fig. 9 , Fig.10 , Fig.11 , Fig.12 , Fig.13 , Fig.14 , Fig.15 , Fig.16 , Fig.17 , Fig.18 , Fig.19 , Fig. 20 , Fig.21 , Fig. 22 and Fig.23 It is a graphic manufacturing Figure 1 A cross-sectional view of a method for displaying a device in FIG.

[0033] Fig.24 It is a graphic Figure 2 A cross-sectional view of an example of an auxiliary electrode in FIG.

[0034] Fig.25 It is a graphic Figure 2 A cross-sectional view of another example of the auxiliary electrode in FIG. DETAILED DESCRIPTION

[0035] It will be understood that when an element is referred to as being "on" or "connected to" another element, it can be directly on or directly connected to the other element, or intervening elements may exist between the element and the other element. In contrast, when an element is referred to as being "directly on" another element, there are no intervening elements.

[0036] The terms used herein are only for the purpose of describing specific embodiments and are not intended to be restrictive. Unless the context clearly states otherwise, as used herein, "one", "a kind of", "the (said)" and "at least one (kind)" do not indicate the limitation of quantity, and are intended to include both the singular and the plural. For example, unless the context clearly states otherwise, "element" has the same meaning as "at least one element". "At least one (kind)" is not interpreted as being limited to "one" or "a kind". "Or" means "and / or". As used herein, the term "and / or" includes any combination and all combinations of one or more related listed items. Throughout this disclosure, the expression "at least one of a, b and c" indicates only a, only b, only c, both a and b, both a and c, both b and c, all of a, b and c or their variants. It will also be understood that the terms “comprises” and / or “comprising” or “includes” and / or “including”, when used in the present specification, specify the presence of stated features, regions, integers, steps, operations, elements and / or components, but do not preclude the presence or addition of one or more other features, regions, integers, steps, operations, elements, components and / or combinations thereof.

[0037] It will be understood that, although the terms "first", "second", "third", etc. may be used herein to describe various elements, components, regions, layers and / or sections, these elements, components, regions, layers and / or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Therefore, without departing from the spirit and scope of the present disclosure, the "first element", "first component", "first region", "first layer" or "first section" discussed below may be referred to as "second element", "second component", "second region", "second layer" or "second section".

[0038] As used herein, "about" or "substantially" includes the stated value and means within an acceptable range of deviation of the particular value determined by one of ordinary skill in the art, taking into account the measurement in question and the errors associated with the measurement of the particular quantity (i.e., the limitations of the measurement system). For example, "about" or "substantially equal to" can mean within one or more standard deviations, or within ±10%, ±5%, or ±2% of the stated value.

[0039] Hereinafter, a display device and a method of manufacturing the same according to an embodiment will be described in more detail with reference to the accompanying drawings. The same reference numerals are used for the same components in the drawings, and redundant descriptions of the same components will be omitted.

[0040] Figure 1is a plan view illustrating a display device according to an embodiment of the present disclosure.

[0041] refer to Figure 1 , the display device DD according to an embodiment of the present disclosure may include a display area DA and a non-display area PA. The non-display area PA may be located adjacent to the display area DA. For example, the non-display area PA may completely surround the display area DA.

[0042] In this specification, a plane may be defined by a first direction DR1 and a second direction DR2. For example, the second direction DR2 may be perpendicular to the first direction DR1. In addition, the third direction DR3 may be perpendicular to the plane.

[0043] The display area DA may be defined as an area for generating an image. A plurality of pixel areas PX may be provided in the display area DA. For example, the pixel areas PX may be arranged along a first direction and a second direction. For example, the first pixel area PX1 and the second pixel area PX2 may be adjacent to each other. In particular, the first pixel area PX1 and the second pixel area PX2 may be adjacent to each other in the second direction DR2.

[0044] The first pixel region PX1 may be a region including a plurality of sub-pixels emitting light. The plurality of sub-pixels may emit a first light, a second light, and a third light of different colors from each other. In an embodiment, the first light may be red light, the second light may be green light, and the third light may be blue light. However, the present disclosure may not be limited thereto. For example, the first pixel region PX1 may be a region including a plurality of sub-pixels emitting yellow light, cyan light, and magenta light. The second pixel region PX2 may be substantially the same as the first pixel region PX1.

[0045] The non-display area PA may be defined as an area where no image is generated. A plurality of power lines may be provided in the non-display area PA. The power lines may supply power voltages to the sub-pixels. The power voltages may include a first power voltage ELVSS, a second power voltage ELVDD, an initialization voltage VINT, and the like. In addition, a driver for driving the display device DD may be provided in the non-display area PA. The driver may be electrically connected to the power lines.

[0046] Figure 2 It is a cross-sectional view taken along line II'. Figure 3 yes Figure 2 An enlarged cross-sectional view of area A in FIG.

[0047] refer to Figure 2 and Figure 3 , display device (e.g., Figure 1The display device DD) may include a substrate SUB, a first inorganic insulating layer ILD1, an active layer ACT, a second inorganic insulating layer ILD2, a gate electrode GE, a third inorganic insulating layer ILD3, a fourth inorganic insulating layer ILD4, a first organic layer VIA1, an auxiliary electrode AXE, a source electrode SE, a drain electrode DE, a second organic layer VIA2, a pixel electrode PE, a pixel defining layer PDL, a light emitting layer EL, a common electrode CE and an encapsulation layer TFE.

[0048] The substrate SUB may be a transparent insulating substrate. For example, the substrate SUB may include glass, quartz, plastic, etc. These may be used alone or in combination with each other.

[0049] The first inorganic insulating layer ILD1 may be disposed on the substrate SUB. The first inorganic insulating layer ILD1 may protect impurities from being diffused from the substrate SUB to the active layer ACT.

[0050] The first inorganic insulating layer ILD1 may include an inorganic material, which may include silicon nitride, silicon oxide, silicon oxynitride, etc. These may be used alone or in combination with each other.

[0051] The active layer ACT may be disposed on the first inorganic insulating layer ILD1. The active layer ACT may include amorphous silicon, polycrystalline silicon, or an oxide semiconductor. The active layer ACT may include a source region SR, a drain region DR, and a channel region CR disposed between the source region SR and the drain region DR, and the source region SR, the drain region DR, and the channel region CR may be doped with impurities.

[0052] The second inorganic insulating layer ILD2 may be disposed on the first inorganic insulating layer ILD1. The second inorganic insulating layer ILD2 may cover the active layer ACT on the first inorganic insulating layer ILD1. For example, the second inorganic insulating layer ILD2 may have a substantially uniform thickness along the contour of the active layer ACT. Alternatively, the second inorganic insulating layer ILD2 may fully cover the active layer ACT, may not generate a step around the active layer ACT, and may have a substantially flat upper surface.

[0053] The second inorganic insulating layer ILD2 may include an inorganic material, which may include silicon nitride, silicon oxide, silicon oxynitride, etc. These may be used alone or in combination with each other.

[0054] The gate electrode GE may be disposed on the second inorganic insulating layer ILD2. The gate electrode GE may overlap the channel region CR of the active layer ACT. The gate electrode GE may include metal, alloy, conductive metal oxide, transparent conductive material, and the like.

[0055] The third inorganic insulating layer ILD3 may be disposed on the second inorganic insulating layer ILD2. The third inorganic insulating layer ILD3 may cover the gate electrode GE on the second inorganic insulating layer ILD2. For example, the third inorganic insulating layer ILD3 may have a substantially uniform thickness along the contour of the gate electrode GE. Alternatively, the third inorganic insulating layer ILD3 may fully cover the gate electrode GE, may not generate a step around the gate electrode GE, and may have a substantially flat upper surface.

[0056] The third inorganic insulating layer ILD3 may include an inorganic material, which may include silicon nitride, silicon oxide, silicon oxynitride, etc. These may be used alone or in combination with each other.

[0057] The fourth inorganic insulating layer ILD4 may be disposed on the third inorganic insulating layer ILD3. The fourth inorganic insulating layer ILD4 may have a substantially uniform thickness along the contour of the third inorganic insulating layer ILD3. Alternatively, the fourth inorganic insulating layer ILD4 may fully cover the third inorganic insulating layer ILD3, may not generate a step around the gate electrode GE, and may have a substantially flat upper surface.

[0058] The fourth inorganic insulating layer ILD4 may include an inorganic material, which may include silicon nitride, silicon oxide, silicon oxynitride, etc. These may be used alone or in combination with each other.

[0059] In the present specification, the inorganic insulating layer ILD may be defined by a first inorganic insulating layer ILD1 , a second inorganic insulating layer ILD2 , a third inorganic insulating layer ILD3 , and a fourth inorganic insulating layer ILD4 .

[0060] The first organic layer VIA1 may be disposed on the inorganic insulating layer ILD. For example, the first organic layer VIA1 may be disposed on the fourth inorganic insulating layer ILD4. By not generating a step around the gate electrode GE, the first organic layer VIA1 may have a substantially flat upper surface. The first organic layer VIA1 may include an organic insulating material such as polyimide. However, the present disclosure may not be limited thereto.

[0061] A first opening OP1 and a second opening OP2 exposing a portion of the upper surface of the inorganic insulating layer ILD may be defined in the first organic layer VIA1. The first opening OP1 and the second opening OP2 may be spaced apart from each other. In an embodiment, an upper surface Q of a portion of the first organic layer VIA1 disposed between the first opening OP1 and the second opening OP2 may have a curved surface.

[0062] The auxiliary electrode AXE may be disposed on the first organic layer VIA1. In particular, the auxiliary electrode AXE may be disposed on a portion of the first organic layer VIA1 disposed between the first opening OP1 and the second opening OP2.

[0063] At least one of the plurality of auxiliary electrodes AXE may be disposed between two pixel regions PX adjacent to each other among the pixel regions PX. For example, the auxiliary electrode AXE may be disposed between the first pixel region PX1 and the second pixel region PX2.

[0064] The auxiliary electrode AXE may include a first conductive layer AXE1, a second conductive layer AXE2, and a third conductive layer AXE3. The first conductive layer AXE1 may contact the first organic layer VIA1. For example, the first conductive layer AXE1 may contact an upper surface Q of a portion of the first organic layer VIA1 disposed between the first opening OP1 and the second opening OP2.

[0065] The opposite ends of the first conductive layer AXE1 may be bent toward the substrate SUB. For example, the upper surface Q of the portion of the first organic layer VIA1 that contacts the first conductive layer AXE1 may have a curved surface. Therefore, the first conductive layer AXE1 may have a curved surface corresponding to the curved surface of the upper surface Q in the cross-sectional view. However, the present disclosure may not be limited thereto, and in another embodiment, the first conductive layer AXE1 may have a straight line in the cross-sectional view, and the opposite ends of the first conductive layer AXE1 may be bent.

[0066] The first conductive layer AXE1 may include a conductive material, for example, titanium, copper, indium tin oxide, indium zinc oxide, etc. These may be used alone or in combination with each other.

[0067] The second conductive layer AXE2 may be disposed on the first conductive layer AXE1. The second conductive layer AXE2 may contact the upper surface of the first conductive layer AXE1 and the rear surface of the third conductive layer AXE3. In an embodiment, the second conductive layer AXE2 may have an undercut shape with the third conductive layer AXE3. For example, the average width of the second conductive layer AXE2 in the second direction DR2 may be smaller than the average width of the third conductive layer AXE3 in the second direction DR2.

[0068] In an embodiment, the second conductive layer AXE2 may include a conductive material. For example, the conductive material may include aluminum, indium tin oxide, indium zinc oxide, etc. These may be used alone or in combination with each other. In an embodiment, the second conductive layer AXE2 may include a material different from that of the first conductive layer AXE1.

[0069] The third conductive layer AXE3 may be disposed on the second conductive layer AXE2. Opposite ends of the third conductive layer AXE3 may be bent toward the substrate SUB. The opposite ends may include a first end X1 and a second end X2.

[0070] At the first end X1 of the upper surface of the third conductive layer AXE3, a first tangent line S1 tangent to the first end X1 may be defined. In addition, a first inclination angle θ1 may be defined as an angle formed by the first tangent line S1 and a plane parallel to the main surface of the substrate SUB. For example, the first inclination angle θ1 may be an angle formed by the first tangent line S1 and the second direction DR2.

[0071] At the second end X2 of the upper surface of the third conductive layer AXE3, a second tangent line S2 tangent to the second end X2 may be defined. In addition, the second inclination angle θ2 may be defined as an angle formed by the second tangent line S2 and a plane parallel to the main surface of the substrate SUB. For example, the second inclination angle θ2 may be an angle formed by the second tangent line S2 and a direction opposite to the second direction DR2.

[0072] In an embodiment, the first inclination angle θ1 may be about 10 degrees or more and about 150 degrees or less. Preferably, the first inclination angle θ1 may be about 70 degrees or more and about 120 degrees or less. In an embodiment, the second inclination angle θ2 may be 10 degrees or more and 150 degrees or less. Preferably, the second inclination angle θ2 may be about 70 degrees or more and about 120 degrees or less. In addition, in the case where each of the first inclination angle θ1 and the second inclination angle θ2 is greater than about 90 degrees, the first end X1 and the second end X2 of the third conductive layer AXE3 may be bent toward the second conductive layer AXE2.

[0073] In an embodiment, the first inclination angle θ1 and the second inclination angle θ2 may be substantially equal to each other. For example, the angle of each of the first inclination angle θ1 and the second inclination angle θ2 may be equal in a range from about 10 degrees to about 150 degrees. However, the present disclosure may not be limited thereto, and during manufacturing, the first inclination angle θ1 and the second inclination angle θ2 may be different from each other.

[0074] In an embodiment, the third conductive layer AXE3 may include a conductive material, such as titanium, copper, indium tin oxide, indium zinc oxide, etc. These may be used alone or in combination with each other.

[0075] In an embodiment, the third conductive layer AXE3 may include the same material as the first conductive layer AXE1. In addition, in an embodiment, the third conductive layer AXE3 may include a material different from that of the second conductive layer AXE2. For example, the first conductive layer AXE1 may include titanium, the second conductive layer AXE2 may include aluminum, and the third conductive layer AXE3 may include titanium. However, the present disclosure may not be limited thereto.

[0076] Alternatively, the third conductive layer AXE3 may include a material different from that of the first conductive layer AXE1. In this case, the second conductive layer AXE2 may include a material different from that of each of the first conductive layer AXE1 and the third conductive layer AXE3. For example, the first conductive layer AXE1 may include indium tin oxide, the second conductive layer AXE2 may include aluminum, and the third conductive layer AXE3 may include titanium. However, the present disclosure may not be limited thereto.

[0077] In an embodiment, the third conductive layer AXE3 may have a curved surface in a cross-sectional view. However, the present disclosure may not be limited thereto, and the third conductive layer AXE3 may have a straight line in a cross-sectional view, and each of the first end X1 and the second end X2 of the third conductive layer AXE3 may be bent toward the substrate SUB.

[0078] The source electrode SE and the drain electrode DE may be disposed on the first organic layer VIA1. The source electrode SE and the drain electrode DE may contact the active layer ACT through a contact hole penetrating some layers of the first organic layer VIA1 and the inorganic insulating layer ILD. For example, the source electrode SE may contact the source region SR through a contact hole penetrating some layers of the first organic layer VIA1 and the inorganic insulating layer ILD. The drain electrode DE may contact the drain region DR through a contact hole penetrating some layers of the first organic layer VIA1 and the inorganic insulating layer ILD. Therefore, the active layer ACT, the gate electrode GE, the source electrode SE, and the drain electrode DE may form a transistor.

[0079] The source electrode SE and the drain electrode DE may include a conductive material. For example, the conductive material may include titanium, aluminum, copper, indium tin oxide, indium zinc oxide, etc. These may be used alone or in combination with each other.

[0080] In an embodiment, each of the source electrode SE and the drain electrode DE may have a multilayer structure including a metal material. For example, each of the source electrode SE and the drain electrode DE may have a three-layer structure corresponding to a first conductive layer AXE1, a second conductive layer AXE2, and a third conductive layer AXE3.

[0081] In an embodiment, each of the source electrode SE and the drain electrode DE may include the same material as the auxiliary electrode AXE. Each of the source electrode SE and the drain electrode DE may be disposed in the same layer as the auxiliary electrode AXE. Each of the source electrode SE and the drain electrode DE may be formed by the same process as the auxiliary electrode AXE.

[0082] The second organic layer VIA2 may be disposed on the source electrode SE and the drain electrode DE. The second organic layer VIA2 may cover a portion of the side surface of the first organic layer VIA1. However, the second organic layer VIA2 may be spaced apart from the auxiliary electrode AXE. In addition, the second organic layer VIA2 may overlap a portion of each of the first opening OP1 and the second opening OP2. For example, the second organic layer VIA2 may fill a portion of the first opening OP1 that is not adjacent to the auxiliary electrode AXE. In addition, the second organic layer VIA2 may fill a portion of the second opening OP2 that is not adjacent to the auxiliary electrode AXE.

[0083] The second organic layer VIA2 may have a substantially flat surface. The second organic layer VIA2 may include an organic insulating material such as polyimide. However, the present disclosure may not be limited thereto.

[0084] The pixel electrode PE may be disposed on the second organic layer VIA2. In an embodiment, the pixel electrode PE may contact the source electrode SE. Alternatively, the pixel electrode PE may contact the drain electrode DE. The pixel electrode PE may include a metal, an alloy, a conductive metal oxide, a conductive metal nitride, and a transparent conductive material, etc. These may be used alone or in combination with each other. For example, the pixel electrode PE may include silver and indium tin oxide.

[0085] The pixel defining layer PDL may be disposed on the second organic layer VIA2. The pixel defining layer PDL may partially cover the pixel electrode PE. In addition, an opening exposing at least a portion of the pixel electrode PE may be defined in the pixel defining layer PDL. For example, the opening in the pixel defining layer PDL may expose a central portion of the pixel electrode PE and cover an edge portion of the pixel electrode PE. The pixel defining layer PDL may include the same material as the first organic layer VIA1 and the second organic layer VIA2. For example, the pixel defining layer PDL may include an organic insulating layer such as polyimide.

[0086] The light-emitting layer EL may be disposed on the pixel defining layer PDL. The light-emitting layer EL may be disposed on the pixel electrode PE exposed by the opening in the pixel defining layer PDL. The light-emitting layer EL may include an organic light-emitting material. For example, the organic light-emitting material may include a low-molecular organic compound or a high-molecular organic compound. However, the present disclosure may not be limited thereto, and the light-emitting layer EL may include a material such as a quantum dot.

[0087] The light emitting layer EL may be disposed on one surface of the first conductive layer AXE1. For example, the light emitting layer EL may extend in the second direction DR2 until a portion of the first conductive layer AXE1 that contacts the second conductive layer AXE2 on the one surface.

[0088] In an embodiment, the light emitting layer EL may be spaced apart from the side surface of the second conductive layer AXE2. Alternatively, the light emitting layer EL may contact the lower portion of the side surface of the second conductive layer AXE2 adjacent to the first conductive layer AXE1. However, in this case, the light emitting layer EL may be spaced apart from the upper portion of the side surface of the second conductive layer AXE2 adjacent to the third conductive layer AXE3.

[0089] The light emitting layer EL may be disposed on the third conductive layer AXE3. Since each of the first end X1 and the second end X2 has an inclination, the light emitting layer EL may not extend toward the first end X1 and the second end X2. Since the third conductive layer AXE3 has a curved line (i.e., a curved surface) in a cross-sectional view, the light emitting layer EL may have a curved line in a cross-sectional view. In an embodiment, the light emitting layer EL disposed on the third conductive layer AXE3 may have a semicircular shape in a cross-sectional view. Alternatively, the light emitting layer EL disposed on the third conductive layer AXE3 may have a substantially flat upper surface.

[0090] Portions of the light emitting layer EL may be disconnected from each other by the auxiliary electrode AXE. For example, the light emitting layer EL adjacent to the first conductive layer AXE1 and the second conductive layer AXE2 may be disconnected from the light emitting layer EL adjacent to the third conductive layer AXE3. The light emitting layer EL adjacent to the first conductive layer AXE1 and the second conductive layer AXE2 may fill a portion of each of the first opening OP1 and the second opening OP2. In addition, the light emitting layer EL adjacent to the first conductive layer AXE1 and the second conductive layer AXE2 may be disposed on a side surface of the first organic layer VIA1 located below the auxiliary electrode AXE.

[0091] The common electrode CE may be disposed on the light emitting layer EL. The common electrode CE may include metal, alloy, conductive metal oxide, transparent conductive material, etc. For example, the common electrode CE may include aluminum, platinum, silver, magnesium, gold, chromium, tungsten, titanium, etc. These may be used alone or in combination with each other.

[0092] The common electrode CE may be disposed on the upper surface of each of the first conductive layer AXE1 and the light emitting layer EL. For example, the common electrode CE may cover the light emitting layer EL on the first conductive layer AXE1. In addition, the common electrode CE may cover a portion of the first conductive layer AXE1 not covered by the light emitting layer EL.

[0093] The common electrode CE may contact a side surface of the second conductive layer AXE2. The common electrode CE may contact a side surface of the second conductive layer AXE2 adjacent to a portion of the first conductive layer AXE1 contacting the second conductive layer AXE2.

[0094] The common electrode CE may be disposed on the third conductive layer AXE3. For example, a portion of the common electrode CE may contact an upper surface of the light emitting layer EL disposed on the third conductive layer AXE3. In an embodiment, since the light emitting layer EL has a curved line in a cross-sectional view, the common electrode CE may have a curved line in a cross-sectional view. Alternatively, the common electrode CE disposed on the third conductive layer AXE3 may have a substantially flat upper surface.

[0095] Portions of the common electrode CE may be disconnected from each other by the auxiliary electrode AXE. For example, the common electrode CE adjacent to the first conductive layer AXE1 and the second conductive layer AXE2 may be disconnected from the common electrode CE adjacent to the third conductive layer AXE3. The common electrode CE adjacent to the first conductive layer AXE1 and the second conductive layer AXE2 may overlap with the first opening OP1 and the second opening OP2. In addition, the common electrode CE adjacent to the first conductive layer AXE1 and the second conductive layer AXE2 may overlap with the side surface of a portion of the first organic layer VIA1 located below the auxiliary electrode AXE.

[0096] The light emitting element LED may include a pixel electrode PE, a light emitting layer EL, and a common electrode CE. The light emitting element LED may emit light. The light emitting element LED may be included in a sub-pixel that emits light.

[0097] As described above, the display device (e.g., Figure 1 The display device DD in the embodiment may include an auxiliary electrode AXE, the auxiliary electrode AXE including: a first conductive layer AXE1; a second conductive layer AXE2 disposed on the first conductive layer AXE1; and a third conductive layer AXE3, the opposite end of which is bent toward the substrate SUB. In addition, the upper surface of the first conductive layer AXE1 and the side surface of the second conductive layer AXE2 may contact the common electrode CE. Therefore, since the auxiliary electrode AXE may assist the action of the power line to which the first power supply voltage is applied, the voltage drop (IR drop) phenomenon may be reduced and the display quality of the display device may be improved.

[0098] A common layer may be further provided above and below the light emitting layer EL. For example, the common layer may be provided between the light emitting layer EL and the common electrode CE. In addition, the common layer may be provided between the light emitting layer EL and the pixel electrode PE. The common layer may include an electron injection layer, an electron transport layer, a hole transport layer, and a hole injection layer. In an embodiment, the hole injection layer, the hole transport layer, the light emitting layer EL, the electron transport layer, and the electron injection layer may be arranged in this order in the third direction DR3. Alternatively, the electron injection layer, the electron transport layer, the light emitting layer EL, the hole transport layer, and the hole injection layer may be arranged in this order in the third direction DR3. However, the present disclosure may not be limited thereto.

[0099] The common layer may be disposed on the third conductive layer AXE3. In addition, the common layer may be disposed on the first conductive layer AXE1. In this case, the common layer may be spaced apart from the second conductive layer AXE2.

[0100] The encapsulation layer TFE may be disposed on the common electrode CE. The encapsulation layer TFE may cover the light emitting element LED. The encapsulation layer TFE may seal the display area DA and protect the light emitting element LED from impurities from the outside.

[0101] The encapsulation layer TFE may include at least one inorganic encapsulation layer and at least one organic encapsulation layer. The inorganic encapsulation layer may include an inorganic insulating material. For example, the inorganic insulating material may include silicon nitride, silicon oxide, silicon oxynitride, etc. These may be used alone or in combination with each other. In addition, the organic encapsulation layer may include an organic insulating material (such as polyimide).

[0102] Figure 4 , Figure 5 , Figure 6 , Figure 7 , Figure 8 , Fig. 9 , Fig.10 , Fig.11 , Fig.12 , Fig.13 , Fig.14 , Fig.15 , Fig.16 , Fig.17 , Fig.18 , Fig.19 , Fig. 20 , Fig.21 , Fig. 22 and Fig.23 It is a graphic manufacturing Figure 1 A cross-sectional view of a method for displaying a device in FIG.

[0103] refer to Figure 4 , the inorganic insulating layer ILD may be formed on the substrate SUB. The inorganic insulating layer ILD may include a first inorganic insulating layer ILD1, a second inorganic insulating layer ILD2, a third inorganic insulating layer ILD3, and a fourth inorganic insulating layer ILD4. The first inorganic insulating layer ILD1, the second inorganic insulating layer ILD2, the third inorganic insulating layer ILD3, and the fourth inorganic insulating layer ILD4 may be stacked on the substrate SUB in this order.

[0104] refer to Figure 5 , a first preliminary organic layer PVIA1 may be formed on the fourth inorganic insulating layer ILD4. The first preliminary organic layer PVIA1 may cover the step formed around the gate electrode GE. An upper surface of the first preliminary organic layer PVIA1 may be substantially flat. The first preliminary organic layer PVIA1 may include an organic insulating material such as polyimide.

[0105] refer to Figure 6 , Figure 7 and Figure 8 , light may be irradiated to a portion of the first primary organic layer PVIA1. For example, light transmitted through the opening in the mask MSK may be irradiated to a portion of the first primary organic layer PVIA1. The positions of the openings in the mask MSK may correspond to the positions of the first opening OP1 and the second opening OP2 of the first primary organic layer PVA1. A portion of the first primary organic layer PVIA1 may be removed by the light irradiated to the first primary organic layer PVIA1 through the opening of the mask MSK. That is, an exposure process may be performed on the first primary organic layer PVA1.

[0106] After the exposure process, the developer DVL may be deposited on a portion of the first primary organic layer PVIA1. The portion of the first primary organic layer PVIA1 that is irradiated with light may easily respond to the developer DVL. For example, the portion of the first primary organic layer PVIA1 that is irradiated with light may have improved solubility in the developer DVL. Therefore, the portion of the first primary organic layer PVIA1 that is irradiated with light may be dissolved in the developer DVL and completely removed.

[0107] A portion of the first preliminary organic layer PVIA1 may be completely removed by the developer DVL to form the first organic layer VIA1. A region where a portion of the first preliminary organic layer PVIA1 is completely removed by the developer DVL and an upper surface of the fourth inorganic insulating layer ILD4 is exposed may be defined as first and second openings OP1 and OP2.

[0108] refer to Fig. 9 , the contact hole CNT may be defined as removing a portion of each of the second inorganic insulating layer ILD2, the third inorganic insulating layer ILD3, the fourth inorganic insulating layer ILD4, and the first organic layer VIA1 by an etching process. Specifically, the contact hole CNT may penetrate each of the second inorganic insulating layer ILD2, the third inorganic insulating layer ILD3, the fourth inorganic insulating layer ILD4, and the first organic layer VIA1 in the third direction DR3 adjacent to the gate electrode GE in the second direction DR2. At least a portion of the upper surface of the active layer ACT may be exposed through the contact hole CNT. For example, the source region SR and the drain region DR of the active layer ACT may be exposed through the contact hole CNT.

[0109] refer to Fig. 9 and Fig.10 , a metal layer SD may be formed on the first organic layer VIA1. The metal layer SD may fill the contact hole CNT. Therefore, a portion of the metal layer SD may contact the source region SR and the drain region DR.

[0110] The metal layer SD may fill the first and second openings OP1 and OP2 . For example, the metal layer SD may cover each of the upper and side surfaces of the first organic layer VIA1 and the upper surface of the fourth inorganic insulating layer ILD4 exposed by the first and second openings OP1 and OP2 .

[0111] refer to Fig.11 , Region B is an enlarged cross-sectional view of the metal layer SD. The metal layer SD may include a first metal layer SD1, a second metal layer SD2, and a third metal layer SD3. That is, the first metal layer SD1 may be formed on the first organic layer VIA1, the second metal layer SD2 may be formed on the first metal layer SD1, and the third metal layer SD3 may be formed on the second metal layer SD2.

[0112] In an embodiment, the first metal layer SD1 may include a conductive material. For example, the conductive material may include titanium, copper, indium tin oxide, indium zinc oxide, etc. These may be used alone or in combination with each other.

[0113] In an embodiment, the second metal layer SD2 may include a conductive material. For example, the conductive material may include aluminum, copper, indium tin oxide, indium zinc oxide, etc. These may be used alone or in combination with each other.

[0114] In an embodiment, the third metal layer SD3 may include a conductive material. For example, the conductive material may include titanium, copper, indium tin oxide, indium zinc oxide, etc. These may be used alone or in combination with each other.

[0115] In an embodiment, the third metal layer SD3 may include the same material as the first metal layer SD1. Alternatively, the third metal layer SD3 may include a material different from that of the first metal layer SD1. In addition, in an embodiment, the third metal layer SD3 may include a material different from that of the second metal layer SD2. For example, the first metal layer SD1 may include titanium, the second metal layer SD2 may include aluminum, and the third metal layer SD3 may include titanium. However, the present disclosure may not be limited thereto.

[0116] refer to Fig.12 , a photoresist PR may be formed on the metal layer SD. An exposure process may be performed on the photoresist PR. For example, light may be irradiated into a portion of the photoresist PR. A portion of the photoresist PR corresponding to the opening position of the mask MSK may be removed by the irradiated light.

[0117] refer to Fig.13The portion of the photoresist PR that is not removed by light may be disposed on the metal layer SD. The photoresist PR that is not removed may overlap the active layer ACT. In addition, the photoresist PR that is not removed may overlap a portion located between the first opening OP1 and the second opening OP2 of the first organic layer VIA1.

[0118] In an embodiment, the photoresist PR may be a positive photoresist. In this case, an etching process may be performed after the exposure process to remove a portion of the metal layer SD that does not overlap with the photoresist PR.

[0119] Alternatively, the photoresist PR may be a negative photoresist. In this case, an etching process may be performed after the exposure process to remove a portion where the metal layer SD overlaps the photoresist PR.

[0120] refer to Fig.14 Through an etching process, a source electrode SE, a drain electrode DE, and an auxiliary electrode AXE may be formed on the first organic layer VIA1. The source electrode SE and the drain electrode DE may contact a portion of the active layer ACT.

[0121] The auxiliary electrode AXE may be formed on a portion between the first opening OP1 and the second opening OP2 of the first organic layer VIA1. The auxiliary electrode AXE may have a thickness corresponding to the first to third metal layers (eg, Fig.11 In addition, an additional etching process may be performed on the auxiliary electrode AXE so that the second conductive layer (eg, Figure 3 The second conductive layer AXE2) in the embodiment has an undercut shape in the cross-sectional view.

[0122] refer to Fig.15 , a second preliminary organic layer PVIA2 may be formed on the source electrode SE, the drain electrode DE, and the auxiliary electrode AXE. The second preliminary organic layer PVIA2 may fill the first opening OP1 and the second opening OP2. The second preliminary organic layer PVIA2 may have a substantially flat upper surface. The second preliminary organic layer PVIA2 may include an organic insulating material such as polyimide.

[0123] refer to Fig.16 and Fig.17, an exposure process and an etching process may be performed on the second primary organic layer PVIA2. Thus, a portion of the second primary organic layer PVIA2 may be removed to form a second organic layer VIA2 having an opening defined therein, through which the fourth inorganic insulating layer ILD4 and the auxiliary electrode AXE are exposed. A portion of the second primary organic layer PVIA2 adjacent to the auxiliary electrode AXE may be removed so that the auxiliary electrode AXE may be spaced apart from the second organic layer VIA2.

[0124] refer to Fig.18 and Fig.19 , the pixel electrode PE may be formed on the second organic layer VIA2. In an embodiment, a portion of the second organic layer VIA2 may be removed by an etching process to expose the upper surface of the source electrode SE. The pixel electrode PE may contact the exposed upper surface of the source electrode SE. Alternatively, a portion of the second organic layer VIA2 may be removed by an etching process to expose the upper surface of the drain electrode DE. The pixel electrode PE may contact the exposed upper surface of the drain electrode DE.

[0125] A pixel defining layer PDL may be formed on the pixel electrode PE. The pixel defining layer PDL may include the same material as the first organic layer VIA1. For example, the pixel defining layer PDL may include an organic insulating material such as polyimide. A portion of the pixel defining layer PDL may be removed to define an opening exposing the upper surface of the pixel electrode PE.

[0126] refer to Fig. 20 The light emitting layer EL may be formed on the pixel defining layer PDL, the pixel electrode PE, the second organic layer VIA2 and the auxiliary electrode AXE. The light emitting layer EL may completely cover the pixel defining layer PDL, the pixel electrode PE, the second organic layer VIA2 and the auxiliary electrode AXE.

[0127] Fig.21 This is an enlarged cross-sectional view of region C1. Fig. 20 and Fig.21 The light emitting material ELa forming the light emitting layer EL may be incident in the first deposition direction DD1. The light emitting material ELa may be incident on the pixel defining layer PDL, the pixel electrode PE, the second organic layer VIA2 and the auxiliary electrode AXE in the first deposition direction DD1 to form the light emitting layer EL.

[0128] The first deposition direction DD1 may form a third tilt angle θ3 relative to the second direction DR2 or a direction opposite to the second direction DR2. The light-emitting material ELa may be incident symmetrically with respect to the second conductive layer AXE2. For example, the light-emitting material ELa may be incident in a direction forming a third tilt angle θ3 relative to the second direction DR2, and may be completely deposited on the pixel defining layer PDL, the pixel electrode PE, the second organic layer VIA2, and the auxiliary electrode AXE. In addition, the light-emitting material ELa may be incident in a direction forming a third tilt angle θ3 relative to a direction opposite to the second direction DR2.

[0129] Since the opposite ends of the third conductive layer AXE3 are bent in a direction opposite to the third direction DR3, the light emitting material ELa is not deposited on the side surface of the second conductive layer AXE2. In an embodiment, a first straight line L1 extending from one of the opposite ends of the third conductive layer AXE3 and parallel to the first deposition direction DD1 may not intersect the side surface of the second conductive layer AXE2.

[0130] Specifically, when the light emitting material ELa is incident in a direction forming a third inclination angle θ3 relative to a direction opposite to the second direction DR2, the light emitting material ELa is incident from the pixel electrode PE toward the auxiliary electrode AXE in the second direction DR2. In this case, the light emitting layer EL is deposited on a portion of the upper surface of the first conductive layer AXE1, but the light emitting material ELa may not be deposited on the side surface of the second conductive layer AXE2. In the case where the light emitting material ELa is incident in a direction forming a third inclination angle θ3 relative to the second direction DR2 and the traveling direction of the deposited light emitting material ELa is opposite to the second direction DR2, the light emitting material ELa may not be deposited on the side surface of the second conductive layer AXE2.

[0131] The light emitting layer EL may be provided on the third conductive layer AXE3. In the case where the third conductive layer AXE3 has a bent line in a cross-sectional view, the light emitting layer EL may also have a bent line in a cross-sectional view.

[0132] Since opposite ends of the third conductive layer AXE3 are bent toward the substrate SUB, parts of the light emitting layer EL can be disconnected from each other by the auxiliary electrode AXE. For example, the light emitting layer EL deposited on the second conductive layer AXE2 can be disconnected from the light emitting layer EL deposited on the third conductive layer AXE3.

[0133] refer to Fig. 22 , a common electrode CE may be formed on the light emitting layer EL. The common electrode CE may completely cover the light emitting layer EL.

[0134] Fig.23 yes Fig. 22 Enlarged cross-sectional view of the C2 region. Fig.23The metal material CEa forming the common electrode CE may be incident in the second deposition direction DD2. The metal material CEa may be incident on the light emitting layer EL in the second deposition direction DD2 to form the common electrode CE.

[0135] The second deposition direction DD2 may form a fourth inclination angle θ4 relative to the second direction DR2 or a direction opposite to the second direction DR2. The common electrode CE may be symmetrically incident on the second conductive layer AXE2. For example, the metal material CEa may be deposited on the light emitting layer EL in a direction forming a fourth inclination angle θ4 relative to the second direction DR2. In addition, the metal material CEa may be deposited on the light emitting layer EL in a direction forming a fourth inclination angle θ4 relative to a direction opposite to the second direction DR2.

[0136] In an embodiment, the fourth inclination angle θ4 may be smaller than the third inclination angle θ3. Therefore, a second straight line L2 extending from one of the opposite ends of the third conductive layer AXE3 and parallel to the second deposition direction DD2 may intersect the side surface of the second conductive layer AXE2. That is, the metal material CEa may be incident in the second deposition direction DD2 and deposited on the side surface of the second conductive layer AXE2. Therefore, when the common electrode CE contacts the side surface of the second conductive layer AXE2, current may flow through the auxiliary electrode AXE.

[0137] The common electrode CE may overlap the third conductive layer AXE3. For example, the common electrode CE may be deposited on the light emitting layer EL formed on the third conductive layer AXE3. When the light emitting layer EL formed on the third conductive layer AXE3 has a curved line in its cross-sectional view, the common electrode CE may also have a curved line in its cross-sectional view.

[0138] However, since opposite ends of the third conductive layer AXE3 are bent toward the substrate SUB, portions of the common electrode CE may be disconnected from each other by the auxiliary electrode AXE. For example, the common electrode CE deposited on the second conductive layer AXE2 may be disconnected from the common electrode CE deposited on the third conductive layer AXE3.

[0139] An encapsulation layer (eg, Figure 2 The encapsulation layer TFE in the Figure 1 The display device in Figure 1 Display device DD in.

[0140] As described above, since the method of manufacturing the display device is to adjust the display device for facing the substrate SUB (refer to Fig. 22) The metal material CEa is deposited at an incident angle of the metal material CEa deposited on the common electrode CE on the bent third conductive layer AXE3, so the auxiliary electrode AXE can be manufactured without any additional process. Therefore, the process time can be shortened and the process cost can be reduced.

[0141] Fig.24 It is a graphic Figure 2 A cross-sectional view of an example of an auxiliary electrode in FIG.

[0142] In addition to the shape of the third conductive layer AXE3', Fig.24 The auxiliary electrode AXE' in Figure 2 and Figure 3 The auxiliary electrode AXE in is the same.

[0143] In the following, the references will be omitted or simplified. Figure 2 and Figure 3 The display device DD described (ref. Figure 1 ) components are repeated descriptions.

[0144] refer to Fig.24 , the auxiliary electrode AXE' may include a third conductive layer AXE3'. The shape of the third conductive layer AXE3' may be a partially rectangular shape in a cross-sectional view. The opposite ends of the third conductive layer AXE3' may face a direction opposite to the third direction DR3. In addition, the opposite ends of the third conductive layer AXE3' may be parallel to the third direction DR3.

[0145] Fig.25 It is a graphic Figure 2 A cross-sectional view of another example of the auxiliary electrode in FIG.

[0146] In addition to the shape of the third conductive layer AXE3", Fig.25 The auxiliary electrode AXE in Figure 2 and Figure 3 The auxiliary electrode AXE in is the same.

[0147] In the following, the references will be omitted or simplified. Figure 2 and Figure 3 The display device DD described (ref. Figure 1 )'s components overlap.

[0148] refer to Fig.25 , the auxiliary electrode AXE” may include a third conductive layer AXE3”. The shape of the third conductive layer AXE3” may be a partial hexagonal shape in a cross-sectional view. The relative ends of the third conductive layer AXE3” may face in a direction opposite to the third direction DR3. In addition, the relative ends of the third conductive layer AXE3” may face in a direction opposite to the direction toward the second conductive layer AXE2.

[0149] The display device and the method of manufacturing the display device according to the embodiment may be applied to electronic devices included in a computer, a notebook, a mobile phone, a smart phone, a smart pad, a PMP, a PDA, an MP3 player, or the like.

[0150] Although the display device and the method of manufacturing the same according to the embodiment have been described with reference to the accompanying drawings, the illustrated embodiments are examples and those skilled in the relevant art may modify and change them without departing from the technical spirit described in the appended claims.

Claims

1. A display device, wherein: The display device comprises: a first organic layer disposed on a substrate and defining a first opening and a second opening spaced apart from the first opening in the first organic layer; an auxiliary electrode, disposed on a portion of the first organic layer between the first opening and the second opening, and comprising: a first conductive layer contacting the portion of the first organic layer; a second conductive layer, disposed on the first conductive layer; and A third conductive layer, disposed on the second conductive layer and having opposite ends of the third conductive layer bent toward the substrate; a light-emitting layer disposed on the first organic layer and the auxiliary electrode, wherein parts of the light-emitting layer are disconnected from each other by the auxiliary electrode; and A common electrode is disposed on the light emitting layer, wherein parts of the common electrode are disconnected from each other by the auxiliary electrode.

2. The display device according to claim 1, wherein: A first inclination angle formed by a first tangent line tangent to a first end of the upper surface of the third conductive layer and a plane parallel to the main surface of the substrate is equal to a second inclination angle formed by a second tangent line tangent to a second end of the upper surface of the third conductive layer and the plane parallel to the main surface of the substrate.

3. The display device according to claim 2, wherein: Each of the first inclination angle and the second inclination angle is 10 degrees to 150 degrees.

4. The display device according to claim 1, wherein: The third conductive layer forms an undercut shape with the second conductive layer.

5. The display device according to claim 1, wherein: The portions of the light emitting layer contact a portion of an upper surface of the first conductive layer and an upper surface of the third conductive layer, respectively, and the portions of the light emitting layer are spaced apart from each other, and a side surface of the second conductive layer is between the portions of the light emitting layer, and The common electrode contacts a portion of the side surface of the second conductive layer and overlaps the light emitting layer contacting the upper surface of the third conductive layer.

6. The display device according to claim 1, wherein: An upper surface of the portion of the first organic layer in contact with the first conductive layer has a curved surface, and Each of the first conductive layer and the third conductive layer has a curved surface corresponding to the curved surface in a cross-sectional view.

7. A method for manufacturing a display device, wherein: The method comprises: forming an inorganic insulating layer on a substrate; forming a first organic layer on the inorganic insulating layer, wherein a first opening and a second opening spaced apart from each other are defined in the first organic layer; forming a first conductive layer on the first organic layer; forming a second conductive layer on the first conductive layer; forming an auxiliary electrode on the second conductive layer by forming a third conductive layer whose opposite ends are bent toward the substrate; forming a light emitting layer on the first organic layer and the auxiliary electrode, wherein parts of the light emitting layer are disconnected from each other by the auxiliary electrode; and A common electrode is formed on the light emitting layer, wherein portions of the common electrode are disconnected from each other by the auxiliary electrode.

8. The method according to claim 7, wherein: The forming of the first organic layer includes: forming a primary organic layer on the inorganic insulating layer; exposing the first preliminary organic layer to light; and forming the first opening and the second opening by removing a portion of the preliminary organic layer by a developer, The forming of the light emitting layer includes depositing a light emitting material forming the light emitting layer in a first deposition direction having a first tilt angle relative to a plane parallel to the main surface of the substrate, and The forming of the common electrode includes depositing a metal material forming the common electrode in a second deposition direction having a second inclination angle with respect to the plane parallel to the main surface of the substrate.

9. The method according to claim 8, wherein: A line extending from one of the opposite ends of the upper surface of the third conductive layer and parallel to the first deposition direction does not intersect a side surface of the second conductive layer.

10. The method according to claim 8, wherein: A line extending from one of the opposite ends of the upper surface of the third conductive layer and parallel to the second deposition direction intersects a side surface of the second conductive layer.

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