Processing method of TGV product

Abstract

The invention relates to a semiconductor device, in particular to a processing method of a TGV product. Comprising the following steps: S1, selecting a glass substrate; s2, laser drilling; s3, etching the hole; s4, filling the hole of the seed layer; s5, electroplating and hole filling; s6, annealing and grinding; and S7, seed layer preparation, photoetching, etching and chemical nickel-palladium-gold plating. The TGV product prepared by the invention has the advantages of smoothness, high through hole yield and stable heating, and can meet the requirement of higher precision of an electrical element.

Description

Technical Field

[0001] The present application relates to a semiconductor device, and more particularly, to a method for processing a TGV product. Background Art

[0002] In the past two years, with the repeated support of industry giants such as Intel, Samsung, and NVIDIA, the word "glass-based" has become a hot new term in the semiconductor industry. With its comprehensive advantages such as light weight, environmental protection, low dielectric loss, and lower cost in the future, glass-based wafers are expected to completely replace silicon-based and ceramic-based wafers, becoming a key new material that changes the direction of the third-generation semiconductors, and shining in the fields of microelectromechanical components (MEMS), CMOS, CCD sensors, microwave circuits, Internet of Things arrays, and the processing and manufacturing of various optical and laser devices.

[0003] However, when high-power lasers are used to dissolve through holes in glass wafers, the holes have crater-like accumulation, resulting in insufficient smoothness of the product, which cannot meet the high-precision requirements of electrical devices. The existing technology generally improves smoothness by grinding, but the process parameters are difficult to control, and cracks and defects are easily generated after grinding. Stress concentration causes uneven expansion coefficients of the substrate after use due to heat, resulting in warping. Adjusting the preparation process of the substrate can easily result in low yield of the through holes of the substrate. The TGV products in the existing technology can no longer meet the increasingly high precision requirements. Summary of the invention

[0004] In order to solve the problem of TGV products having smoothness, high through-hole yield and thermal stability, the present application provides a processing method for TGV products.

[0005] The present application provides a TGV product processing method, comprising the following steps: S1: Select a glass substrate; one or more of borosilicate glass and quartz glass; S2: laser drilling: laser drilling on the glass substrate to obtain a pre-treated substrate, the laser drilling includes one or more of ultraviolet picosecond laser induced drilling and infrared picosecond laser induced drilling; S3: etching holes: etching holes on the surface of the pre-treated substrate using an etching solution to obtain an etched substrate; S4: filling seed layer: depositing a seed layer on the etched substrate to obtain a deposited substrate, wherein the deposition includes one or more of magnetron sputtering and ADL processes; S5: electroplating hole filling: using an electroplating solution to electroplate the deposited substrate with a pulse power supply to obtain an electroplated substrate; S6: Annealing and grinding: Annealing and grinding the electroplated substrate to obtain a smooth substrate.

[0006] By adopting the above scheme, high-quality borosilicate glass and quartz glass with lower thermal expansion coefficient and higher dielectric properties are selected, and the TGV product obtained is more stable. By first punching the glass substrate and then etching, high-density small holes with relatively smooth hole walls can be obtained; by depositing a seed layer and then electroplating to fill the holes, laser-induced etching can accurately control the aperture size, realize a through-hole structure with a high aspect ratio, and keep the side walls smooth, reduce cracks, broken edges, and burrs, and deposit a metal material with a certain thickness more densely on the inner wall of the substrate to form a stable conductive effect, and it is not easy to cause the substrate to warp during subsequent annealing and grinding; by annealing the electroplated substrate first and then grinding it, the residual stress in the substrate is eliminated, the metal stress on the front and back of the substrate is balanced, the substrate size is stabilized, the deformation and crack tendency are reduced, the tissue defects of the obtained substrate are eliminated to a certain extent, and the surface is smoother.

[0007] In a specific embodiment, the glass substrate is one or more of Corning EXG or Schott's BF33, and the plating solution includes Atotech's THF Cu, One or more of 2HF.

[0008] By selecting the above substrate, the performance of the glass substrate and the electroplating solution is relatively stable and better. The elemental composition of the substrate is suitable for the processing method and etching solution of this application. The conductive path obtained is smooth and unobstructed, and a more stable and high-performance TGV product can be obtained.

[0009] In a specific embodiment, the laser is ultraviolet picosecond with a wavelength of 300-400 nm, a power of 3-30 W, a frequency of 50-500 kHz, and a pulse width of 1-10 ps.

[0010] By adopting the above scheme, the laser parameters are suitable for the substrate material of the present application, the degree of volcano-like protrusions is low, the stress accumulation of the substrate is small, and the structure is more stable.

[0011] Preferably, the laser is ultraviolet picosecond with a wavelength of 355 nm, a power of 20 W, a frequency of 270 kHz and a pulse width of 5 ps.

[0012] Preferably, the interval of laser drilling is 100-500 μm.

[0013] In a specific embodiment, the etching solution includes one or more of 10-20 wt % hydrofluoric acid, 5-30 wt % sodium hydroxide solution, 5-15 wt % ammonium fluoride solution, 5-30 wt % hydrogen peroxide and a mixture of dilute sulfuric acid.

[0014] Preferably, the etching solution comprises 15 wt % sodium hydroxide solution and 12 wt % ammonium fluoride solution in a volume ratio of 1:1.1.

[0015] By adopting the above scheme, the rough surface is better polished, compacted, and corroded after etching, and the micropores made by the laser are penetrated, reducing the height of the volcanic protrusions induced by the laser, and reducing the stress and internal defects accumulated during the laser induction process. The structure of the TGV product obtained later is more stable after heating. In addition, the subsequent seed layer is deposited more tightly after etching, and the stress is better dispersed during polishing. By adopting the above-mentioned proportion and concentration of etching solution, the etching effect is more uniform and sufficient, the good hole rate is higher, and the etching solution effect is suitable for the substrate of this application.

[0016] In a specific embodiment, filling the seed layer includes the following steps: degreasing, acid washing, baking, and plasma cleaning.

[0017] By adopting the above scheme, impurities on the smooth substrate surface are first removed, and the subsequent filling is more uniform and tight, and the substrate surface is smoother.

[0018] In a specific embodiment, the hole filling seed layer further comprises the following steps: -7 Under a vacuum degree of 10 Torr or above, argon gas with a purity of 99.999% is introduced at a flow rate of 10-50 sccm, and Ti or Cu magnetron sputtering is performed at a temperature of 145-155°C, a power of 50-150W, a voltage of 300-600V, and a current of 0.1-2A.

[0019] By adopting the above solution, the filling effect is good, which is suitable for the etched substrate prepared in the present application, and the micropores of the substrate can be fully filled.

[0020] Preferably, the hole-filling seed layer further comprises the following steps: -7 Under a vacuum degree of 1000 Torr, argon gas with a purity of 99.999% was introduced at a flow rate of 35 sccm, and magnetron sputtering of the Ti target was performed at a temperature of 151° C., a power of 80 W, a voltage of 600 V, and a current of 1.1 A.

[0021] In a specific embodiment, the electroplating current density is 0.05-3.0 A / dm 2 , the duty cycle is 5-50%, and the pulse frequency is 1-10kHz.

[0022] By adopting the above scheme, the electroplating effect is good, the connection is tight, and the prepared substrate is relatively stable.

[0023] Preferably, the electroplating current density is 1.7-1.9A / dm 2 , the duty cycle is 23-25%, and the pulse frequency is 5-7kHz.

[0024] Preferably, the electroplating current density is 1.8A / dm 2 , the duty cycle is 24% and the pulse frequency is 6kHz.

[0025] During repeated experiments, the applicant found that under the above-mentioned electroplating parameters, the surface of the TGV product produced by the processing method of the present application is smoother and more stable when heated. It may be that at this time, the tiny defects of the substrate are fully filled after the electroplating of the TGV product, and the filling is complete and there are no holes. The surface of the obtained substrate is smooth, and the stress is better dispersed during grinding and heating.

[0026] In a specific embodiment, the annealing grinding comprises the following steps: S61: Mechanically thinning the electroplated substrate to 38-42 μm, heating to 280° C. at a rate of 3-5° C. / min in a nitrogen atmosphere, and cooling to 25-30° C. at a rate of 2-5° C. / min after 30-60 minutes to obtain an annealed substrate; S62: Grind the surface of the annealed substrate with 120-240 grit sandpaper to remove dirt and burrs, then place the annealed substrate on a polyurethane pad, add grinding liquid, grind at 150-500 rpm under a pressure of 0.5-2.0 bar, then polish at 500-1000 rpm until the substrate is 5-10 μm thick to obtain a smooth substrate.

[0027] By adopting the above scheme, the overflowed metal layer is polished away after metal deposition, which effectively prevents short circuit of the device. The mechanical thinning method speeds up the removal of thick copper. By slowly heating and then cooling in a nitrogen atmosphere and limiting the temperature change rate, metal oxidation is reduced. The temperature change rate is suitable for the thermal expansion coefficient and connection strength of each part of the substrate prepared in this application. The prepared substrate is smoother, flatter, and has more stable performance. By adding a certain amount of grinding fluid during the grinding process, the heat and debris generated during grinding are effectively taken away. By using a polyurethane pad as a polishing pad, the grinding is efficient and uniform. By limiting the grinding pressure and rotation speed, the stability of the grinding is further improved.

[0028] Preferably, the electroplated substrate is mechanically thinned to 40 μm, heated to 280° C. at a rate of 4° C. / min in a nitrogen atmosphere, and then cooled to 25° C. at a rate of 3.5° C. / min after 45 minutes to obtain an annealed substrate.

[0029] Preferably, the annealed substrate is surface-polished with 240-grit sandpaper to remove dirt and burrs, and then the annealed substrate is placed on a polyurethane pad, and a grinding liquid is added. Under a pressure of 2.0 bar, the substrate is first ground at 400 rpm and then polished at 700 rpm to a thickness of 7.5 μm to obtain a smooth substrate.

[0030] In a specific embodiment, the pH value of the grinding liquid is 4.0-7.0, the content of peroxidant in the grinding liquid is 1-5wt%, and the hardness of the polyurethane pad is 40-80 Shore D.

[0031] By adopting the above solution, the parameters of the grinding liquid and the hardness of the polyurethane pad are more suitable for the TGV product prepared in this application, and the product is smoother after grinding.

[0032] In a specific embodiment, the processing method further includes the following steps: seed layer preparation, photolithography, etching, and chemical plating of nickel-palladium-gold.

[0033] In summary, this application has the following beneficial effects: 1. Compared with the prior art, the present application selects glass substrate raw materials, further induces drilling and then etching on the glass substrate, and further defines the process parameters of each step, so that the glass substrate has a smooth surface and a stable structure.

[0034] 2. This application achieves tight metal connections on the substrate by first filling the seed layer, then electroplating, first annealing, and then grinding, and accurately defines the process parameters of each step, and the stress dispersion effect is good, and it is not easy to warp or fail at high temperature due to the different thermal expansion coefficients of various parts. BRIEF DESCRIPTION OF THE DRAWINGS

[0035] Figure 1 This is a schematic diagram of the process flow of the product in this application; Figure 2 This is a schematic diagram of the structure of the pre-processed substrate obtained after laser drilling in this application; Figure 3 This is a schematic diagram of the etching substrate structure obtained after etching holes in the present application; Figure 4 This is a schematic diagram of the top view of the TGV product prepared in this application. DETAILED DESCRIPTION

[0036] To further help understand the technical solution of the present invention, several specific embodiments are provided to describe the technical solution of the present invention in more detail. All the embodiments described are only partial embodiments of the present invention, not all of them; the embodiments can be combined with each other, and the same or similar concepts or processes may not be described in detail in some embodiments. The following embodiments are further explanations of the present invention, and the present invention is not limited thereto.

[0037] The grinding liquids in the examples were all prepared in the preparation examples. The glass substrate was Schott BF33 and the plating liquid was Atotech THF Cu. Unless otherwise specified, other experimental reagents were conventional commercial brands or obtained through conventional preparation processes.

[0038] Preparation Example Preparation of grinding liquid: Add 1 g of acetic acid, 1 g of hydrogen peroxide, 0.1 g of benzotriazole, and 2 g of aluminum oxide with an average particle size of 0.1 μm into 95.9 g of deionized water, stir evenly, and obtain a grinding liquid. Example

[0039] Embodiment 1: S1: Select glass substrate: Select Schott BF33 as the glass substrate; S2: Laser drilling: laser-induced drilling is performed on a glass substrate to obtain a pre-treated substrate, with the holes spaced 150 μm up and down and 100 μm left and right. The laser is a picosecond ultraviolet laser with a wavelength of 355 nm, a power of 20 W, a frequency of 270 kHz, and a pulse width of 5 ps. S3: Etching holes: 15 wt% sodium hydroxide solution and 12 wt% ammonium fluoride solution in a volume ratio of 1:1.1 are used to etch the surface of the pre-treated substrate until the holes are through to obtain an etched substrate. S4: Filling seed layer: Degrease the etched substrate, pickle with 5wt% hydrochloric acid, bake at 40°C, plasma clean at 300W, and then -7 Under a vacuum degree of 1000 Torr, argon gas with a purity of 99.999% was introduced at a flow rate of 35 sccm, and magnetron sputtering of a Ti target was performed at a temperature of 151°C, a power of 80W, a voltage of 600V, and a current of 1.1A to obtain a deposited substrate; S5: Electroplating hole filling: Use the electroplating solution to electroplate the deposited substrate with pulse power supply to obtain an electroplated substrate with a current density of 1.8A / dm 2 , the duty cycle is 24%, and the pulse frequency is 6kHz; S61: Mechanically thinning the electroplated substrate to 40 μm, heating to 280° C. at a rate of 4° C. / min in a nitrogen atmosphere, and cooling to 25° C. at a rate of 3.5° C. / min after 45 minutes to obtain an annealed substrate; S62: Grind the surface of the annealed substrate with 240-grit sandpaper to remove dirt and burrs, then place the annealed substrate on a polyurethane pad with a hardness of 60 Shore D, add abrasive liquid, grind at 400 rpm and then polish at 700 rpm under a pressure of 2.0 bar to obtain a smooth substrate with a thickness of 7.5 μm; S7: Repeat the seed layer preparation on the smooth substrate, and then use conventional processes such as photolithography, etching, and electroless nickel-palladium-gold plating to obtain the TGV product.

[0040] Embodiment 2: S1: Select glass substrate: Select Schott BF33 as the glass substrate; S2: Laser drilling: laser-induced drilling is performed on a glass substrate to obtain a pre-treated substrate, with the holes spaced 150 μm up and down and 100 μm left and right. The laser is a picosecond ultraviolet laser with a wavelength of 355 nm, a power of 20 W, a frequency of 270 kHz, and a pulse width of 5 ps. S3: Etching holes: 12 wt% ammonium fluoride solution is used to etch the surface of the pre-treated substrate until the holes are through to obtain an etched substrate. S4: Filling seed layer: Degrease the etched substrate, pickle with 5wt% hydrochloric acid, bake at 40°C, plasma clean at 300W, and then -7 Under a vacuum degree of 1000 Torr, argon gas with a purity of 99.999% was introduced at a flow rate of 35 sccm, and magnetron sputtering of a Ti target was performed at a temperature of 151°C, a power of 80W, a voltage of 600V, and a current of 1.1A to obtain a deposited substrate; S5: Electroplating hole filling: Use the electroplating solution to electroplate the deposited substrate with pulse power supply to obtain an electroplated substrate with a current density of 1.8A / dm 2 , the duty cycle is 24%, and the pulse frequency is 6kHz; S61: Mechanically thinning the electroplated substrate to 40 μm, heating to 280° C. at a rate of 4° C. / min in a nitrogen atmosphere, and cooling to 25° C. at a rate of 3.5° C. / min after 45 minutes to obtain an annealed substrate; S62: Grind the surface of the annealed substrate with 240-grit sandpaper to remove dirt and burrs, then place the annealed substrate on a polyurethane pad with a hardness of 60 Shore D, add abrasive liquid, grind at 400 rpm and then polish at 700 rpm under a pressure of 2.0 bar to obtain a smooth substrate with a thickness of 7.5 μm; S7: Repeat the seed layer preparation on the smooth substrate, and then use conventional processes such as photolithography, etching, and electroless nickel-palladium-gold plating to obtain the TGV product.

[0041] Embodiment 3: S1: Select glass substrate: Select Schott BF33 as the glass substrate; S2: Laser drilling: laser-induced drilling is performed on a glass substrate to obtain a pre-treated substrate, with the holes spaced 150 μm up and down and 100 μm left and right. The laser is a picosecond ultraviolet laser with a wavelength of 355 nm, a power of 20 W, a frequency of 270 kHz, and a pulse width of 5 ps. S3: Etching holes: 15 wt% sodium hydroxide solution and 12 wt% ammonium fluoride solution in a volume ratio of 1:1.1 are used to etch the surface of the pre-treated substrate until the holes are through to obtain an etched substrate. S4: filling seed layer: introducing argon gas with a purity of 99.999% at a flow rate of 35 sccm, and performing magnetron sputtering of a Ti target at a temperature of 151° C., a power of 80 W, a voltage of 600 V, and a current of 1.1 A to obtain a deposition substrate; S5: Electroplating hole filling: Use the electroplating solution to electroplate the deposited substrate with pulse power supply to obtain an electroplated substrate with a current density of 1.8A / dm 2 , the duty cycle is 24%, and the pulse frequency is 6kHz; S61: Mechanically thinning the electroplated substrate to 40 μm, heating to 280° C. at a rate of 4° C. / min in a nitrogen atmosphere, and cooling to 25° C. at a rate of 3.5° C. / min after 45 minutes to obtain an annealed substrate; S62: Grind the surface of the annealed substrate with 240-grit sandpaper to remove dirt and burrs, then place the annealed substrate on a polyurethane pad with a hardness of 60 Shore D, add abrasive liquid, grind at 400 rpm and then polish at 700 rpm under a pressure of 2.0 bar to obtain a smooth substrate with a thickness of 7.5 μm; S7: Repeat the seed layer preparation on the smooth substrate, and then use conventional processes such as photolithography, etching, and electroless nickel-palladium-gold plating to obtain the TGV product.

[0042] Embodiment 4: S1: Select glass substrate: Select Schott BF33 as the glass substrate; S2: Laser drilling: laser-induced drilling is performed on a glass substrate to obtain a pre-treated substrate, with the holes spaced 150 μm up and down and 100 μm left and right. The laser is a picosecond ultraviolet laser with a wavelength of 355 nm, a power of 20 W, a frequency of 270 kHz, and a pulse width of 5 ps. S3: Etching holes: 15 wt% sodium hydroxide solution and 12 wt% ammonium fluoride solution in a volume ratio of 1:1.1 are used to etch the surface of the pre-treated substrate until the holes are through to obtain an etched substrate. S4: filling seed layer: degreasing the etched substrate, pickling with 5wt% hydrochloric acid, baking at 40°C, plasma cleaning at 300W, and magnetron sputtering of a Ti target at a temperature of 151°C, a power of 80W, a voltage of 600V, and a current of 1.1A to obtain a deposited substrate; S5: Electroplating hole filling: Use the electroplating solution to electroplate the deposited substrate with pulse power supply to obtain an electroplated substrate with a current density of 1.8A / dm 2 , the duty cycle is 24%, and the pulse frequency is 6kHz; S61: Mechanically thinning the electroplated substrate to 40 μm, heating to 280° C. at a rate of 4° C. / min in a nitrogen atmosphere, and cooling to 25° C. at a rate of 3.5° C. / min after 45 minutes to obtain an annealed substrate; S62: Grind the surface of the annealed substrate with 240-grit sandpaper to remove dirt and burrs, then place the annealed substrate on a polyurethane pad with a hardness of 60 Shore D, add abrasive liquid, grind at 400 rpm and then polish at 700 rpm under a pressure of 2.0 bar to obtain a smooth substrate with a thickness of 7.5 μm; S7: Repeat the seed layer preparation on the smooth substrate, and then use conventional processes such as photolithography, etching, and electroless nickel-palladium-gold plating to obtain the TGV product.

[0043] Embodiment 5: S1: Select glass substrate: Select Schott BF33 as the glass substrate; S2: Laser drilling: laser-induced drilling is performed on a glass substrate to obtain a pre-treated substrate, with the holes spaced 150 μm up and down and 100 μm left and right. The laser is a picosecond ultraviolet laser with a wavelength of 355 nm, a power of 20 W, a frequency of 270 kHz, and a pulse width of 5 ps. S3: Etching holes: 15 wt% sodium hydroxide solution and 12 wt% ammonium fluoride solution in a volume ratio of 1:1.1 are used to etch the surface of the pre-treated substrate until the holes are through to obtain an etched substrate. S4: Filling seed layer: Degrease the etched substrate, pickle with 5wt% hydrochloric acid, bake at 40°C, plasma clean at 300W, and then -7 Under a vacuum degree of 1000 Torr, argon gas with a purity of 99.999% was introduced at a flow rate of 5 sccm, and magnetron sputtering of a Ti target was performed at a temperature of 151°C, a power of 80W, a voltage of 600V, and a current of 1.1A to obtain a deposited substrate; S5: Electroplating hole filling: Use the electroplating solution to electroplate the deposited substrate with pulse power supply to obtain an electroplated substrate with a current density of 1.8A / dm 2 , the duty cycle is 24%, and the pulse frequency is 6kHz; S61: Mechanically thinning the electroplated substrate to 40 μm, heating to 280° C. at a rate of 4° C. / min in a nitrogen atmosphere, and cooling to 25° C. at a rate of 3.5° C. / min after 45 minutes to obtain an annealed substrate; S62: Grind the surface of the annealed substrate with 240-grit sandpaper to remove dirt and burrs, then place the annealed substrate on a polyurethane pad with a hardness of 60 Shore D, add abrasive liquid, grind at 400 rpm and then polish at 700 rpm under a pressure of 2.0 bar to obtain a smooth substrate with a thickness of 7.5 μm; S7: Repeat the seed layer preparation on the smooth substrate, and then use conventional processes such as photolithography, etching, and electroless nickel-palladium-gold plating to obtain the TGV product.

[0044] Embodiment 6: S1: Select glass substrate: Select Schott BF33 as the glass substrate; S2: Laser drilling: laser-induced drilling is performed on a glass substrate to obtain a pre-treated substrate, with the holes spaced 150 μm up and down and 100 μm left and right. The laser is a picosecond ultraviolet laser with a wavelength of 355 nm, a power of 20 W, a frequency of 270 kHz, and a pulse width of 5 ps. S3: Etching holes: 15 wt% sodium hydroxide solution and 12 wt% ammonium fluoride solution in a volume ratio of 1:1.1 are used to etch the surface of the pre-treated substrate until the holes are through to obtain an etched substrate. S4: Filling seed layer: Degrease the etched substrate, pickle with 5wt% hydrochloric acid, bake at 40°C, plasma clean at 300W, and then-7 Under a vacuum degree of 1000 Torr, argon gas with a purity of 99.999% was introduced at a flow rate of 35 sccm, and magnetron sputtering of a Ti target was performed at a temperature of 151°C, a power of 80W, a voltage of 600V, and a current of 1.1A to obtain a deposited substrate; S5: Electroplating hole filling: Use the electroplating solution to electroplate the deposited substrate with pulse power supply to obtain an electroplated substrate with a current density of 2.0A / dm 2 , the duty cycle is 24%, and the pulse frequency is 6kHz; S61: Mechanically thinning the electroplated substrate to 40 μm, heating to 280° C. at a rate of 4° C. / min in a nitrogen atmosphere, and cooling to 25° C. at a rate of 3.5° C. / min after 45 minutes to obtain an annealed substrate; S62: Grind the surface of the annealed substrate with 240-grit sandpaper to remove dirt and burrs, then place the annealed substrate on a polyurethane pad with a hardness of 60 Shore D, add abrasive liquid, grind at 400 rpm and then polish at 700 rpm under a pressure of 2.0 bar to obtain a smooth substrate with a thickness of 7.5 μm; S7: Repeat the seed layer preparation on the smooth substrate, and then use conventional processes such as photolithography, etching, and electroless nickel-palladium-gold plating to obtain the TGV product.

[0045] Embodiment 7: S1: Select glass substrate: Select Schott BF33 as the glass substrate; S2: Laser drilling: laser-induced drilling is performed on a glass substrate to obtain a pre-treated substrate, with the holes spaced 150 μm up and down and 100 μm left and right. The laser is a picosecond ultraviolet laser with a wavelength of 355 nm, a power of 20 W, a frequency of 270 kHz, and a pulse width of 5 ps. S3: Etching holes: 15 wt% sodium hydroxide solution and 12 wt% ammonium fluoride solution in a volume ratio of 1:1.1 are used to etch the surface of the pre-treated substrate until the holes are through to obtain an etched substrate. S4: Filling seed layer: Degrease the etched substrate, pickle with 5wt% hydrochloric acid, bake at 40°C, plasma clean at 300W, and then -7 Under a vacuum degree of 1000 Torr, argon gas with a purity of 99.999% was introduced at a flow rate of 35 sccm, and magnetron sputtering of a Ti target was performed at a temperature of 151°C, a power of 80W, a voltage of 600V, and a current of 1.1A to obtain a deposited substrate; S5: Electroplating hole filling: Use the electroplating solution to electroplate the deposited substrate with pulse power supply to obtain an electroplated substrate with a current density of 3.5A / dm 2 , the duty cycle is 24%, and the pulse frequency is 6kHz; S61: Mechanically thinning the electroplated substrate to 40 μm, heating to 280° C. at a rate of 4° C. / min in a nitrogen atmosphere, and cooling to 25° C. at a rate of 3.5° C. / min after 45 minutes to obtain an annealed substrate; S62: Grind the surface of the annealed substrate with 240-grit sandpaper to remove dirt and burrs, then place the annealed substrate on a polyurethane pad with a hardness of 60 Shore D, add abrasive liquid, grind at 400 rpm and then polish at 700 rpm under a pressure of 2.0 bar to obtain a smooth substrate with a thickness of 7.5 μm; S7: Repeat the seed layer preparation on the smooth substrate, and then use conventional processes such as photolithography, etching, and electroless nickel-palladium-gold plating to obtain the TGV product.

[0046] Embodiment 8: The difference between this embodiment and embodiment 1 is that: S61: Mechanically thinning the electroplated substrate to 40 μm, heating it to 280° C. at a rate of 3° C. / min in a nitrogen atmosphere, and cooling it to 25° C. at a rate of 3.5° C. / min after 45 minutes to obtain an annealed substrate; S62: The annealed substrate was surface-grinded with 240-grit sandpaper to remove dirt and burrs, and then the annealed substrate was placed on a polyurethane pad with a hardness of 60 Shore D, and abrasive liquid was added. At a pressure of 2.0 bar, the substrate was first ground at 400 rpm and then polished at 700 rpm until it was 7.5 μm thick to obtain a smooth substrate.

[0047] Embodiment 9: The difference between this embodiment and embodiment 1 is that: S61: Mechanically thinning the electroplated substrate to 40 μm, heating it to 280° C. at a rate of 5° C. / min in a nitrogen atmosphere, and cooling it to 25° C. at a rate of 3.5° C. / min after 45 minutes to obtain an annealed substrate; S62: The annealed substrate was surface-grinded with 240-grit sandpaper to remove dirt and burrs, and then the annealed substrate was placed on a polyurethane pad with a hardness of 60 Shore D, and abrasive liquid was added. At a pressure of 2.0 bar, the substrate was first ground at 400 rpm and then polished at 700 rpm until it was 7.5 μm thick to obtain a smooth substrate.

[0048] Embodiment 10: The difference between this embodiment and embodiment 1 is that: S61: Mechanically thinning the electroplated substrate to 40 μm, heating to 280° C. at a rate of 8° C. / min in a nitrogen atmosphere, and cooling to 25° C. at a rate of 3.5° C. / min after 45 minutes to obtain an annealed substrate; S62: The annealed substrate was surface-grinded with 240-grit sandpaper to remove dirt and burrs, and then the annealed substrate was placed on a polyurethane pad with a hardness of 60 Shore D, and abrasive liquid was added. At a pressure of 2.0 bar, the substrate was first ground at 400 rpm and then polished at 700 rpm until it was 7.5 μm thick to obtain a smooth substrate.

[0049] Embodiment 11: The difference between this embodiment and embodiment 1 is that: S61: Mechanically thinning the electroplated substrate to 40 μm, heating to 240° C. at a rate of 4° C. / min in a nitrogen atmosphere, and cooling to 25° C. at a rate of 3.5° C. / min after 45 minutes to obtain an annealed substrate; S62: The annealed substrate was surface-grinded with 240-grit sandpaper to remove dirt and burrs, and then the annealed substrate was placed on a polyurethane pad with a hardness of 60 Shore D, and abrasive liquid was added. At a pressure of 2.0 bar, the substrate was first ground at 400 rpm and then polished at 700 rpm until it was 7.5 μm thick to obtain a smooth substrate.

[0050] Embodiment 12: The difference between this embodiment and embodiment 1 is that: S61: Mechanically thinning the electroplated substrate to 40 μm, heating it to 280° C. at a rate of 4° C. / min in a nitrogen atmosphere, and cooling it to 25° C. at a rate of 3.5° C. / min after 30 minutes to obtain an annealed substrate; S62: The annealed substrate was surface-grinded with 240-grit sandpaper to remove dirt and burrs, and then the annealed substrate was placed on a polyurethane pad with a hardness of 60 Shore D, and abrasive liquid was added. At a pressure of 2.0 bar, the substrate was first ground at 400 rpm and then polished at 700 rpm until it was 7.5 μm thick to obtain a smooth substrate.

[0051] Embodiment 13: The difference between this embodiment and embodiment 1 is that: S61: Mechanically thinning the electroplated substrate to 40 μm, heating it to 280° C. at a rate of 4° C. / min in a nitrogen atmosphere, and cooling it to 25° C. at a rate of 3.5° C. / min after 10 minutes to obtain an annealed substrate; S62: The annealed substrate was surface-grinded with 240-grit sandpaper to remove dirt and burrs, and then the annealed substrate was placed on a polyurethane pad with a hardness of 60 Shore D, and abrasive liquid was added. At a pressure of 2.0 bar, the substrate was first ground at 400 rpm and then polished at 700 rpm until it was 7.5 μm thick to obtain a smooth substrate.

[0052] Embodiment 14: The difference between this embodiment and embodiment 1 is that: S61: Mechanically thinning the electroplated substrate to 40 μm, heating to 280° C. at a rate of 4° C. / min in a nitrogen atmosphere, and cooling to 25° C. at a rate of 3.5° C. / min after 45 minutes to obtain an annealed substrate; S62: The annealed substrate was surface-grinded with 240-grit sandpaper to remove dirt and burrs, and then the annealed substrate was placed on a polyurethane pad with a hardness of 40 Shore D, and abrasive liquid was added. At a pressure of 2.0 bar, the substrate was first ground at 400 rpm and then polished at 700 rpm until it was 7.5 μm thick to obtain a smooth substrate.

[0053] Embodiment 15: The difference between this embodiment and embodiment 1 is that: S61: Mechanically thinning the electroplated substrate to 40 μm, heating to 280° C. at a rate of 4° C. / min in a nitrogen atmosphere, and cooling to 25° C. at a rate of 3.5° C. / min after 45 minutes to obtain an annealed substrate; S62: The annealed substrate was surface-grinded with 240-grit sandpaper to remove dirt and burrs, and then the annealed substrate was placed on a polyurethane pad with a hardness of 80 Shore D, and abrasive liquid was added. At a pressure of 2.0 bar, the substrate was first ground at 400 rpm and then polished at 700 rpm until it was 7.5 μm thick to obtain a smooth substrate.

[0054] Embodiment 16: The difference between this embodiment and embodiment 1 is that: S61: Mechanically thinning the electroplated substrate to 40 μm, heating to 280° C. at a rate of 4° C. / min in a nitrogen atmosphere, and cooling to 25° C. at a rate of 3.5° C. / min after 45 minutes to obtain an annealed substrate; S62: The annealed substrate was surface-grinded with 240-grit sandpaper to remove dirt and burrs, and then the annealed substrate was placed on a polyurethane pad with a hardness of 20 Shore D, and abrasive liquid was added. At a pressure of 2.0 bar, the substrate was first ground at 400 rpm and then polished at 700 rpm until it was 7.5 μm thick to obtain a smooth substrate.

[0055] Embodiment 17: The difference between this embodiment and embodiment 1 is that: S61: Mechanically thinning the electroplated substrate to 40 μm, heating to 280° C. at a rate of 4° C. / min in a nitrogen atmosphere, and cooling to 25° C. at a rate of 3.5° C. / min after 45 minutes to obtain an annealed substrate; S62: The annealed substrate was surface-grinded with 240-grit sandpaper to remove dirt and burrs, and then the annealed substrate was placed on a polyurethane pad with a hardness of 100 Shore D, and abrasive liquid was added. At a pressure of 2.0 bar, the substrate was first ground at 400 rpm and then polished at 700 rpm until it was 7.5 μm thick to obtain a smooth substrate.

[0056] Embodiment 18: The difference between this embodiment and embodiment 1 is that: S61: Mechanically thinning the electroplated substrate to 40 μm, heating to 280° C. at a rate of 4° C. / min in a nitrogen atmosphere, and cooling to 25° C. at a rate of 3.5° C. / min after 45 minutes to obtain an annealed substrate; S62: Grind the surface of the annealed substrate with 240-grit sandpaper to remove dirt and burrs, then place the annealed substrate on a polyurethane pad with a hardness of 60 Shore D, add grinding liquid, grind at 400 rpm first, and then polish at 700 rpm until it is 7.5 μm thick to obtain a smooth substrate.

[0057] Embodiment 19: The difference between this embodiment and embodiment 1 is that: S61: Mechanically thinning the electroplated substrate to 40 μm, heating to 280° C. at a rate of 4° C. / min in a nitrogen atmosphere, and cooling to 25° C. at a rate of 3.5° C. / min after 45 minutes to obtain an annealed substrate; S62: The annealed substrate was surface-grinded with 240-grit sandpaper to remove dirt and burrs, and then the annealed substrate was placed on a polyurethane pad with a hardness of 60 Shore D, and abrasive liquid was added. The substrate was polished at 700 rpm under a pressure of 2.0 bar until it was 7.5 μm thick to obtain a smooth substrate.

[0058] Comparative Example Comparative Example 1 S1: Select glass substrate: Select Schott BF33 as the glass substrate; S2: Laser drilling: Infrared picosecond laser induced drilling on the glass substrate until the holes are through to obtain an etched substrate, the drilling interval is 150μm, the laser wavelength is 1064nm, the pulse width is 15ps, the repetition frequency is 75KHz, and the power is 30W; S3: Filling seed layer: Degrease the etched substrate, pickle with 5wt% hydrochloric acid, bake at 40°C, plasma clean at 300W, and then -7 Under a vacuum degree of 1000 Torr, argon gas with a purity of 99.999% was introduced at a flow rate of 35 sccm, and magnetron sputtering of a Ti target was performed at a temperature of 151°C, a power of 80W, a voltage of 600V, and a current of 1.1A to obtain a deposited substrate; S4: Electroplating hole filling: Use the electroplating solution to electroplate the deposited substrate with pulse power supply to obtain an electroplated substrate with a current density of 1.8A / dm 2 , the duty cycle is 24%, and the pulse frequency is 6kHz; S51: Mechanically thinning the electroplated substrate to 40 μm, heating it to 280° C. at a rate of 4° C. / min in a nitrogen atmosphere, and cooling it to 25° C. at a rate of 3.5° C. / min after 45 minutes to obtain an annealed substrate; S52: grinding the annealed substrate with 240-grit sandpaper to remove dirt and burrs, then placing the annealed substrate on a polyurethane pad, adding abrasive liquid, grinding at 400 rpm and then polishing at 700 rpm under a pressure of 2.0 bar, grinding to a thickness of 7.5 μm to obtain a smooth substrate; S6: Repeat the seed layer preparation on the smooth substrate, and then use conventional processes such as photolithography, etching, and electroless nickel-palladium-gold plating to obtain the TGV product.

[0059] Comparative Example 2: S1: Select glass substrate: Select Schott BF33 as the glass substrate; S2: Laser drilling: laser-induced drilling is performed on a glass substrate to obtain a pre-treated substrate, with the holes spaced 150 μm up and down and 100 μm left and right. The laser is a picosecond ultraviolet laser with a wavelength of 355 nm, a power of 20 W, a frequency of 270 kHz, and a pulse width of 5 ps. S3: Etching holes: 15 wt% sodium hydroxide solution and 12 wt% ammonium fluoride solution in a volume ratio of 1:1.1 are used to etch the surface of the pre-treated substrate until the holes are through to obtain an etched substrate. S4: Filling seed layer: Degrease the etched substrate, pickle with 5wt% hydrochloric acid, bake at 40°C, plasma clean at 300W, and then -7 Under a vacuum degree of 1000 Torr, argon gas with a purity of 99.999% was introduced at a flow rate of 35 sccm, and magnetron sputtering of a Ti target was performed at a temperature of 151°C, a power of 80W, a voltage of 600V, and a current of 1.1A to obtain a deposited substrate; S5: Electroplating hole filling: Use the electroplating solution to electroplate the deposited substrate with pulse power supply to obtain an electroplated substrate with a current density of 1.8A / dm 2 , the duty cycle is 24%, and the pulse frequency is 6kHz; S61: Mechanically thinning the electroplated substrate to 40 μm, heating to 280° C. at a rate of 4° C. / min in a nitrogen atmosphere, and cooling to 25° C. at a rate of 3.5° C. / min after 45 minutes to obtain an annealed substrate; S62: Grind the surface of the annealed substrate with 240-grit sandpaper to remove dirt and burrs, then place the annealed substrate on a polyurethane pad with a hardness of 60 Shore D, add abrasive liquid, grind at 400 rpm and then polish at 700 rpm under a pressure of 2.0 bar to obtain a smooth substrate with a thickness of 7.5 μm; S7: Repeat the seed layer preparation on the smooth substrate, and then use conventional processes such as photolithography, etching, and electroless nickel-palladium-gold plating to obtain the TGV product.

[0060] Performance testing The TGV products prepared in each embodiment and comparative example were observed under a microscope, and the through-hole yield and surface warpage were measured. Then, the products were baked at 80° C. for 30 minutes, and the warpage was re-observed. The warpage was divided into 5 levels from 1 to 5, where 1 was very flat, 2 was no obvious warpage, 3 was warpage, 4 was obvious warpage, and 5 was severe warpage. The test results are summarized in Table 1.

[0061] Table 1 In combination with Examples 1-7, Comparative Examples 1-2 and Table 1, the present application provides a preparation method and limits the raw material selection and process parameters of the process, so that the prepared TGV product has a higher through-hole yield and a lower taper. After heating, the product is not easy to warp because the various parts are tightly connected and the stress is well dispersed.

[0062] In combination with Examples 1, 8-19, Comparative Example 2 and Table 1, the present application further balances the stress of the substrate by adding an annealing step and accurately defining the parameters of the annealing process, so that the obtained TGV product has better performance.

[0063] This specific embodiment of the present application is merely an explanation of the present application and is not a limitation of the present application. After reading this specification, a person skilled in the art may make modifications to the embodiment without any creative contribution as needed, but such modifications are protected by the patent law as long as they are within the scope of the claims of the present application.

Claims

1. A method for processing a TGV product, characterized in that: The steps include: S1: Selecting a glass substrate: selecting one or more of borosilicate glass and quartz glass as the glass substrate; S2: laser drilling: laser drilling on the glass substrate to obtain a pre-treated substrate, the laser drilling includes one or more of ultraviolet picosecond laser induced drilling and infrared picosecond laser induced drilling; S3: etching holes: etching holes on the surface of the pre-treated substrate using an etching solution to obtain an etched substrate; S4: filling seed layer: depositing a seed layer on the etched substrate to obtain a deposited substrate, wherein the deposition includes one or more of magnetron sputtering and ADL processes; S5: electroplating hole filling: using an electroplating solution to electroplate the deposited substrate with a pulse power supply to obtain an electroplated substrate; S6: Annealing and grinding: annealing and grinding the electroplated substrate to obtain a smooth substrate.

2. The method for processing TGV products according to claim 1, characterized in that: The glass substrate is one or more of Corning EXG or Schott's BF33, and the electroplating solution includes one or more of Atotech's InPro® THF Cu and Inpulse® 2HF.

3. In a specific embodiment, the laser is ultraviolet picosecond with a wavelength of 300-400nm, a power of 3-30W, a frequency of 50-500kHz, and a pulse width of 1-10ps.

4. The method for processing TGV products according to claim 1, characterized in that: The etching solution includes one or more of 10-20wt% hydrofluoric acid, 5-30wt% sodium hydroxide solution, 5-15% ammonium fluoride solution, 5-30wt% hydrogen peroxide and a mixture of dilute sulfuric acid.

5. The method for processing TGV products according to claim 1, characterized in that: The hole filling seed layer comprises the following steps: degreasing, pickling, baking and plasma cleaning.

6. The method for processing TGV products according to claim 1, characterized in that: The hole filling seed layer further comprises the following steps: -7 Under a vacuum degree of 10 Torr or above, introduce argon gas with a purity of 99.999% at a flow rate of 10-50 sccm, and perform Ti or Cu magnetron sputtering at a temperature of 145-155°C, a power of 50-150W, a voltage of 300-600V, and a current of 0.1-2A.

7. The method for processing TGV products according to claim 1, characterized in that: The electroplating current density is 0.05-3.0A / dm², the duty cycle is 5-50%, and the pulse frequency is 1-10kHz.

8. The method for processing TGV products according to claim 1, characterized in that: The annealing and grinding comprises the following steps: S61: Mechanically thinning the electroplated substrate to 38-42 μm, heating to 280° C. at a rate of 3-5° C. / min in a nitrogen atmosphere, and cooling to 25-30° C. at a rate of 2-5° C. / min after 30-60 minutes to obtain an annealed substrate; S62: Grind the surface of the annealed substrate with 120-240 grit sandpaper to remove dirt and burrs, then place the annealed substrate on a polyurethane pad, add grinding liquid, grind at 150-500 rpm under a pressure of 0.5-2.0 bar, then polish at 500-1000 rpm until the substrate is 5-10 μm thick to obtain a smooth substrate.

9. The method for processing TGV products according to claim 5, characterized in that: The pH value of the grinding liquid is 4.0-7.0, the content of peroxidant in the grinding liquid is 1-5wt%, and the hardness of the polyurethane pad is 40-80 Shore D.

10. The method for processing TGV products according to claim 1, characterized in that: The processing method also includes the following steps: seed layer preparation, photolithography, etching, and chemical plating of nickel-palladium-gold.

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