A Ultra-Wideband 2-bit Phase Reconfigurable Reflectarray and Electromagnetic Wave Regulation Method

Abstract

The present invention provides an ultra-wideband 2-bit phase reconfigurable reflectarray and an electromagnetic wave regulation method, belonging to the field of novel artificial electromagnetic materials. The array is composed of a two-dimensional periodic arrangement of units consisting of tightly coupled antennas and active microstrip circuits. PIN diodes and varactor diodes are integrated into the active microstrip circuits on the back of the units. By utilizing the on-off characteristics of the PIN diodes and the varactor characteristics of the varactor diodes, the units are enabled to have the ability to regulate four different phase states within the ultra-wideband range, and the phase difference between each phase state is 90°. By performing 2-bit phase encoding on different units in the array, functions such as scattered beam focusing, scattered beam deflection, low electromagnetic scattering, and electromagnetic signal simulation can be achieved. The present invention has the advantages of 2-bit reflection phase reconfigurability, ultra-large working bandwidth, and easy system integration, and has important application prospects in the fields of ultra-wideband radar electronic countermeasures and interference.

Description

Technical Field

[0001] The present invention relates to an ultra-wideband 2-bit phase reconfigurable reflectarray and an electromagnetic wave regulation method, belonging to the field of novel artificial electromagnetic materials. Background Art

[0002] Active Reflectarray is a novel antenna technology that combines traditional reflectarray antennas and active electronic devices, aiming to achieve efficient and highly flexible electromagnetic scattering control by integrating active devices and reflectarray structures. The traditional passive reflectarray changes the reflection phase by adjusting the geometric structure of the array elements (such as patch size or delay line) to form a specific wavefront. However, it has the defects of narrow bandwidth and inflexible phase adjustment. With the development of semiconductor technology, it has become possible to integrate active devices (such as PIN diodes, varactor diodes, amplifiers, etc.) into the reflectarray elements, thereby realizing dynamic control of each element. After the incident electromagnetic wave is received by the element, the phase (or amplitude) is adjusted through an active circuit and then reflected back into space. By independently controlling the electromagnetic response of each element, different electromagnetic scattering functions can be achieved.

[0003] Electromagnetic metamaterials, as artificially designed composite electromagnetic structures, its core principle is to achieve engineering regulation of equivalent medium parameters through the orderly arrangement of sub-wavelength scale units. Such artificial structures can break through the performance limitations of natural materials and show important application values in fields such as negative refraction and electromagnetic invisibility. However, traditional three-dimensional metamaterials are limited by the three-dimensional arrangement method and have engineering problems such as large volume, high processing cost, and difficulty in flexible deployment. To address the above bottleneck problems, two-dimensional planar electromagnetic structures emerged. This technology uses sub-wavelength resonant elements to construct planar periodic or quasi-periodic structures and regulates the phase distribution of the electromagnetic wavefront through spatial coding. Compared with three-dimensional metamaterials, two-dimensional planar structures have significant advantages such as low profile, light weight, and easy integration, and are particularly suitable for application scenarios such as conformal antennas. However, the early passive two-dimensional planar electromagnetic structures have the limitation of fixed functions: their working bandwidths are generally low and lack real-time reconfigurability, which severely restricts the adaptability of actual systems. To break through the limitation of non-adjustability of passive structures, active reconfigurable two-dimensional periodic structures realize dynamic regulation of electromagnetic waves by integrating semiconductor devices (such as PIN diodes, varactor diodes) into metal elements. Such active electromagnetic structures can gradually achieve electromagnetic functions such as phase adjustable, amplitude adjustable, and amplitude-phase combined regulation.

[0004] However, when the existing reconfigurable two-dimensional periodic structures implement the electromagnetic function of 2-bit phase regulation, the working bandwidth is difficult to exceed 50%. Therefore, it is an urgent problem to be solved at present to achieve ultra-wideband 2-bit phase reconfigurable electromagnetic functions by adopting new design methods and design concepts.

[0005] The present invention proposes a novel ultra-wideband phase reconfigurable reflectarray design paradigm: based on the broadband characteristics of microstrip transmission lines and the ultra-wideband working characteristics of PIN diodes / varactors, an innovative bottom active microstrip circuit is designed; combined with the ultra-wideband electromagnetic wave receiving and transmitting capabilities of tightly coupled antennas, the designed reflectarray has the ability to control the phase of scattered electromagnetic waves within the ultra-wideband. Summary of the invention

[0006] Technical problem: The ultra-wideband 2-bit phase reconfigurable reflectarray based on a novel active microstrip circuit of the present invention breaks through the limitations of traditional passive two-dimensional planar electromagnetic structures such as rigid functions and narrow bandwidth, and solves the problem that traditional active two-dimensional planar electromagnetic structures cannot achieve 2-bit dynamic phase regulation within an ultra-wide operating frequency band. In traditional two-dimensional planar electromagnetic structures, the metal structures in the array units are mostly dispersive structures. Combined with the physical properties of the medium itself, electromagnetic resonance is used to manipulate spatial electromagnetic waves, which is very unfavorable for achieving ultra-wideband electromagnetic functions. The ultra-wideband reflectarray of the present invention achieves better ultra-wideband electromagnetic performance by using existing active devices and a new waveguide structure design.

[0007] Technical solution: A 2-bit phase reconfigurable reflectarray of the present invention is composed of a two-dimensional periodic arrangement of a number of identical array units. It is characterized in that each array unit includes three metal layers. The first metal layer is an impedance transformer layer for welding a tightly coupled antenna. The second metal layer is a ground layer. The third metal layer is an active microstrip circuit layer. A first type of metal via is provided between the first metal layer and the third metal layer, and a second type of metal via is provided between the second metal layer and the third metal layer. The tightly coupled antenna is a vertical antenna, with a frequency selective surface at its upper part, a microstrip balun and an electric dipole at its lower part, and a matching stub is provided at the end of the microstrip balun. The active microstrip circuit includes four PIN diodes, four varactor diodes, four blocking capacitors, five types of microstrip lines and nine types of DC bias circuits. One end of the first type of microstrip line is connected to the impedance transformer through the first type of metal via; the other end is connected to the negative electrodes of the four PIN diodes. The positive electrodes of the four PIN diodes are respectively connected to the second, third, fourth and fifth types of microstrip lines. The four varactor diodes are respectively integrated between the second, third, fourth and fifth types of microstrip lines and the second type of metal via. The positive electrodes of the four varactor diodes are grounded through the second type of metal via, and the negative electrodes are respectively connected to the positive electrodes of the corresponding PIN diodes through the second, third, fourth and fifth types of microstrip lines. Blocking capacitors are respectively integrated between the positive electrodes of the four PIN diodes and the negative electrodes of the four varactor diodes. The nine types of DC bias circuits are respectively connected to the first type of microstrip line, the positive electrodes of the four PIN diodes and the negative electrodes of the four varactor diodes. The on-off of the PIN diodes and the change of the capacitance value of the varactor diodes are controlled by adjusting the DC voltage.

[0008] Preferably, the bottom end of the microstrip balun is connected to the impedance transformer by welding.

[0009] Preferably, the active microstrip circuit includes a single-pole four-throw switch composed of four PIN diodes, and four radio frequency channels composed of microstrip lines with different lengths and varactor diodes with different capacitance ratios.

[0010] Preferably, the DC bias circuit is a DC-blocking AC-passing circuit composed of an inductor, a capacitor and a resistor. Among them, the inductance value of the inductor is 83 nH, the capacitance value of the capacitor is 150 pF, and the resistance value of the resistor is 5 Ω.

[0011] Preferably, in the array unit, the first metal layer is located on the upper surface of the upper dielectric substrate, the second metal layer is located between the upper dielectric substrate and the intermediate adhesive layer, and the third metal layer is located on the lower surface of the lower dielectric substrate; the upper dielectric substrate has a dielectric constant of 2.94, a thickness of 1.7 mm, and a tangent of loss angle of 0.0017; the intermediate adhesive layer has a dielectric constant of 3.5, a thickness of 0.1 mm, and a tangent of loss angle of 0.0042; the lower dielectric substrate has a dielectric constant of 2.65, a thickness of 0.9 mm, and a tangent of loss angle of 0.0015.

[0012] Preferably, the tightly coupled antenna is a single-layer printed circuit board, and the dielectric substrate thereof has a dielectric constant of 2.94, a tangent of loss angle of 0.0017, and a thickness of 1.7 mm.

[0013] Preferably, the line width of the microstrip line in the active microstrip circuit is the line width corresponding to a characteristic impedance of 50 ohms.

[0014] The present invention also provides an electromagnetic wave regulation method based on the above-mentioned metasurface, including the following steps: after the tightly coupled antenna converts the spatial electromagnetic wave into a guided wave, the guided wave is conducted to the impedance converter; the impedance converter conducts the guided wave to the first microstrip line in the active microstrip circuit through the first metal through hole; by switching the DC bias voltage between 0 V and 1.3 V, the on-off of the PIN diode can be regulated, and the subsequent propagation path of the guided wave, that is, the second, third, fourth, or fifth microstrip line, can be controlled; by changing the DC bias voltage of the varactor diode in the range of 0-15 V, the capacitance value of the varactor diode on the subsequent path is changed, and the phase of the guided wave is dynamically regulated; finally, the guided wave returns along the original path and is radiated into the free space by the tightly coupled antenna.

[0015] Advantageous effects: Compared with the prior art, the advantages of the present invention are as follows:

[0016] 1. By integrating the active microstrip circuit in each array unit, the present invention enables the novel reflective array to have the advantages of low manufacturing cost, large working bandwidth, and easy system integration, and has important application prospects in the fields of radar electronic countermeasure and interference with ultra-wide bandwidth.

[0017] 2. The present invention adopts the design idea of "receiving - processing - transmitting", with a clear design idea, and this type of design idea can be used to quickly design array units with other electromagnetic functions. In the array unit of the present invention, a tightly coupled antenna is used to receive and radiate spatial electromagnetic waves, and the ultra-wideband reflection phase 2-bit reconfigurable processing is realized through the active microstrip circuit.

[0018] 3. The present invention converts spatial electromagnetic waves into guided waves for processing. Meanwhile, by utilizing the broadband operating characteristics of microstrip transmission lines, PIN diodes, and varactor diodes, the influence of dispersion of passive metal structures is reduced, and the electromagnetic characteristics of 2-bit phase reconfigurability under an ultra-wide bandwidth are achieved.

[0019] 4. Compared with the traditional fan-shaped offset stub technology, the DC-blocking and AC-passing circuit technology composed of resistors, capacitors, and inductors applied in the present invention has the characteristics of a large operating bandwidth and a small footprint, and plays an irreplaceable role in the design of low-frequency operating circuits.

[0020] 5. The present invention is convenient to process and easy to implement. The reflective array adopted in the present invention has a mature low-cost processing technology and can be fabricated using printed circuit board technology. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Figure 1 FIG. is a schematic diagram of the model of the ultra-wideband 2-bit phase reconfigurable reflective array of the present invention, where (a) and (b) are respectively schematic diagrams of the front and back of the model.

[0022] Figure 2 FIG. is an enlarged view of a single array element of the present invention.

[0023] Figure 3 FIG. is an enlarged view of the active microstrip circuit of the array element of the present invention in a skew view.

[0024] Figure 4 FIG. is a logical schematic diagram of the operation of the array element of the present invention.

[0025] Figure 5 FIG. is a simulation result diagram of 2-bit phase regulation of the array element of the present invention, where (a) is the simulation result diagram of 2-bit phase regulation at an operating frequency of 0.449 GHz, and (b) is the simulation result diagram of 2-bit phase regulation at an operating frequency of 0.600 GHz.

[0026] Figure 6 FIG. is a simulation result diagram of 2-bit phase regulation of the array element of the present invention, where (a) is the simulation result diagram of 2-bit phase regulation at an operating frequency of 0.750 GHz, and (b) is the simulation result diagram of 2-bit phase regulation at an operating frequency of 0.900 GHz.

[0027] Figure 7 FIG. is a simulation result diagram of 2-bit phase regulation of the array element of the present invention, where (a) is the simulation result diagram of 2-bit phase regulation at an operating frequency of 1.050 GHz, and (b) is the simulation result diagram of 2-bit phase regulation at an operating frequency of 1.200 GHz.

[0028] Figure 8 It is the simulation result diagram of 2-bit phase regulation of the array unit of the present invention. Among them, (a) is the simulation result diagram of 2-bit phase regulation at the working frequency point of 1.350 GHz, and (b) is the simulation result diagram of 2-bit phase regulation at the working frequency point of 1.595 GHz.

[0029] Figure 9 It is the simulation result diagram of the reflection amplitude corresponding to the 2-bit phase regulation of the array unit of the present invention at different frequency points.

[0030] In the figure, 1. tightly coupled antenna vertical plate, 2. array bottom plate, 3. active microstrip circuit, 4. frequency selective surface, 5. electric dipole, 6. microstrip balun, 7. impedance transformer, 8. PIN diode, 9. varactor diode, 10. DC bias circuit, 11. first type of microstrip line, 12. second type of microstrip line, 13. third type of microstrip line, 14. fourth type of microstrip line, 15. fifth type of microstrip line. Specific Embodiment

[0031] The following further clarifies the present invention in conjunction with the accompanying drawings and specific embodiments. It should be understood that these embodiments are only used to illustrate the present invention and not to limit the scope of the present invention. After reading the present invention, various equivalent modifications made by those skilled in the art fall within the scope defined by the appended claims of this application.

[0032] In this embodiment, the novel ultra-wideband reflective array uses a tightly coupled antenna to receive and radiate spatial waves. The working process is as follows: After the tightly coupled antenna converts the spatial electromagnetic wave into a guided wave, the guided wave is conducted to the impedance transformer; the impedance transformer conducts the guided wave to the first type of microstrip line in the active microstrip circuit through the first type of metal through hole; by switching the DC bias voltage between 0V and 1.3V, the on-off of the PIN diode can be regulated, and the subsequent propagation path of the guided wave can be controlled, that is, the second, third, fourth, or fifth type of microstrip line, and each microstrip line corresponds to a radio frequency channel; by changing the DC bias voltage of the varactor diode within the range of 0 - 15V, the capacitance value of the varactor diode in the subsequent path is changed to dynamically regulate the phase of the guided wave; after the guided wave touches the ground, it returns along the original path and is finally radiated into free space by the tightly coupled antenna.

[0033] The electromagnetic metasurface consists of N units with a side length of D composed of N units. In this example, an electromagnetic metasurface composed of 8 7 metasurface units is selected. This embodiment includes a total of eight printed circuit boards, namely an array bottom plate 2 integrating an active microstrip circuit, a metal ground, and an impedance transformer and seven tightly coupled antenna vertical plates 1, as Figure 1As shown. By applying different DC bias voltages to the active microstrip circuit 3 on the back of the array, 2-bit control of the reflection phase can be achieved within the ultra-wideband range.

[0034] The array bottom plate 2 is a three-layer printed circuit board, including upper and lower dielectric substrates and an intermediate adhesive layer. The dielectric constant of the upper dielectric substrate is 2.94, the thickness is 1.7 mm, and the tangent of the loss angle is 0.0017; the dielectric constant of the intermediate adhesive layer is 3.5, the thickness is 0.1 mm, and the tangent of the loss angle is 0.0042; the dielectric constant of the lower dielectric substrate is 2.65, the thickness is 0.9 mm, and the tangent of the loss angle is 0.0015. The tightly coupled antenna vertical plate 1 is a single-layer printed circuit board, and the dielectric substrate thereof has a dielectric constant of 2.94, a tangent of the loss angle of 0.0017, and a thickness of 1.7 mm. All eight printed circuit boards use copper foil as the material of the metal structure, with a copper thickness of HOZ, and an anti-oxidation treatment is performed using a tin immersion process.

[0035] The overall structure of the array unit is divided into three layers. The upper layer is an ultra-wideband tightly coupled antenna, the middle layer is a metal ground, and the lower layer is an active microstrip circuit integrated with active devices. The tightly coupled antenna used in this embodiment includes three parts, namely a frequency selective surface 4 with a square periodic structure, an electric dipole 5, and a microstrip balun 6. The microstrip balun and the electric dipole are fed in a coupled manner. The end of the microstrip balun uses an extension line as a matching stub to achieve good impedance matching within the ultra-wideband range. The bottom end of the microstrip balun is connected to one end of an impedance transformer 7 by soldering. The other end of the impedance transformer 7 is connected to the active microstrip circuit through the first type of metal via, as Figure 2 shown. The impedance transformer 7 is a tapered microstrip line, which is used to transform the input impedance of the tightly coupled antenna into 50 Ω, so as to achieve good energy transmission between the active microstrip circuit and the tightly coupled antenna.

[0036] The active microstrip circuit located on the back of the array unit consists of four PIN diodes, four varactor diodes, four DC blocking capacitors, five types of microstrip lines, and nine types of DC bias circuits, as Figure 3As shown in the figure. The negative electrodes of the four PIN diodes 8 are connected to the first type of microstrip line 11, and the positive electrodes are respectively connected to the second type of microstrip line 12, the third type of microstrip line 13, the fourth type of microstrip line 14, and the fifth type of microstrip line 15. The four PIN diodes form a single-pole four-throw switch, which selects four radio frequency channels. Different radio frequency channels correspond to microstrip lines with different line lengths and different varactor diodes 9. The other end of the varactor diode 9 is connected to the ground through the second type of metal via hole. The PIN diode and the varactor diode are respectively provided with bias voltages of 0 - 1.3V and 0 - 15V through the broadband DC bias circuit 10 to control the propagation path of the guided wave and thus regulate its phase. The DC bias circuit 10 is composed of two inductors, a capacitor, and a resistor. The line widths of the first, second, third, fourth, and fifth types of microstrip lines are all the line widths corresponding to a characteristic impedance of 50 ohms.

[0037] In this embodiment, the working logic schematic diagram of the array unit is as shown in Figure 4 As shown in the figure, a single-pole four-throw switch is built using four PIN diodes, and different radio frequency channels are selected according to requirements to process the guided wave. The four radio frequency channels correspond to four microstrip transmission lines with different lengths and varactor diodes with different varactor ranges. After the electromagnetic wave received by the antenna is conducted to the first type of microstrip transmission line, it will be selected by the single-pole four-throw switch composed of PIN diodes to a certain radio frequency channel. After the phase shift of the fixed-length microstrip transmission line in this radio frequency channel and the regulation of the varactor diode at the end, the guided wave is reflected back along the original path and finally radiated into space by the antenna.

[0038] In this embodiment, the phase modulation principle of different radio frequency channels composed of transmission lines with different line lengths and varactor diodes with different varactor ranges is as follows:

[0039] According to the formula for solving the reflection coefficient in transmission line theory:

[0040] (1)

[0041] Where, is the normalized input impedance at a distance z', which can be obtained by the following formula:

[0042] (2)

[0043] is the phase shift constant; is the normalized load impedance. At the end of the transmission line in the radio frequency channel, the load is a variable capacitance value , which is regarded as an ideal capacitor, that is, various parasitic parameters in the actual active device are ignored. Then the normalized load impedance is as follows:

[0044] (3)

[0045] Substituting formula (3) into formula (2) for calculation, we get :

[0046] (4)

[0047] where A varies with and z'. Substituting formula (4) into formula (1) and simplifying, we get:

[0048] (5)

[0049] Combining with Euler's formula, the phase of the reflection coefficient and the relationship with the variable capacitance value and the length z' of the transmission line are:

[0050] (6)

[0051] That is, when the variable capacitance value and the length z' of the transmission line change, the corresponding phase of the reflection coefficient will also change accordingly.

[0052] Combining the above theory, a single-pole four-throw switch composed of PIN diodes is used to switch microstrip lines of different lengths and change the capacitance value of the varactor diode to achieve 2-bit phase modulation. Using the method of combined field-circuit simulation, the simulation models of the PIN diode and varactor diode provided by the manufacturer are substituted into the array unit for overall simulation, and the 2-bit phase simulation results of the unit at different frequency points are obtained as shown in Figure 5 , Figure 6 , Figure 7 and Figure 8 . When performing 2-bit phase modulation at different frequency points, the results of the corresponding reflection amplitude are as shown in Figure 9 .

[0053] According to the combined simulation results, the reflection array in this embodiment has a working bandwidth of 0.449 GHz - 1.595 GHz, with a relative bandwidth of 112.1%, far exceeding the existing design cases. Within this bandwidth range, 2-bit phase coverage can be achieved, and at the same time, the corresponding reflection amplitude fluctuation does not exceed 4 dB.

[0054] Starting from the theoretical models of using load varactor phase modulation and microstrip transmission line phase shift, the present invention gives a simple design idea and method. Only by changing the propagation path of the guided wave through a single-pole four-throw switch built by four PIN diodes can a 2-bit reflection phase be constructed within the ultra-wideband frequency range.

[0055] The present invention has the advantages of ultra-wide bandwidth, 2-bit adjustable electromagnetic reflection phase, low manufacturing cost, easy system integration, etc., and can be used to achieve functions such as scattered beam deflection, scattered beam focusing, low electromagnetic scattering, and electromagnetic signal simulation.

[0056] It should be noted that the above are only the preferred embodiments of the present invention in the P-band and L-band. The same structure can be applied to higher frequency bands, such as the C-band, X-band, Ku-band, etc., through size scaling. It should be pointed out that for those of ordinary skill in the art, without departing from the principle of the present invention, several improvements and modifications can be made, and these improvements and modifications should also be regarded as the protection scope of the present invention.

Claims

1. A ultra-wideband 2-bit phase reconfigurable reflectarray, which is composed of a two-dimensional periodic arrangement of a number of identical array elements, is characterized in that The array unit includes three metal layers. The first metal layer is an impedance converter layer for welding a tightly coupled antenna. The second metal layer is a ground layer. The third metal layer is an active microstrip circuit layer. The first metal layer is located on the upper surface of the upper dielectric substrate. The second metal layer is located between the upper dielectric substrate and the intermediate adhesive layer. The third metal layer is located on the lower surface of the lower dielectric substrate. A first type of metal via is provided between the first metal layer and the third metal layer. A second type of metal via is provided between the second metal layer and the third metal layer. The tightly coupled antenna is a vertical antenna, with a frequency selective surface at its upper part and a microstrip balun and an electric dipole at its lower part. A matching stub is provided at the end of the microstrip balun. The active microstrip circuit includes four PIN diodes, four varactor diodes, four blocking capacitors, five types of microstrip lines, and nine types of DC bias circuits. One end of the first type of microstrip line is connected to the impedance converter through the first type of metal via, and the other end is connected to the negative electrodes of the four PIN diodes. The positive electrodes of the four PIN diodes are respectively connected to the second, third, fourth, and fifth types of microstrip lines. The four varactor diodes are respectively integrated between the second, third, fourth, and fifth types of microstrip lines and the second type of metal via. The positive electrodes of the four varactor diodes are grounded through the second type of metal via, and the negative electrodes are respectively connected to the positive electrodes of the corresponding PIN diodes through the second, third, fourth, and fifth types of microstrip lines. Blocking capacitors are respectively integrated between the positive electrodes of the four PIN diodes and the negative electrodes of the four varactor diodes. The nine types of DC bias circuits are respectively connected to the first type of microstrip line, the positive electrodes of the four PIN diodes, and the negative electrodes of the four varactor diodes. The on / off of the PIN diodes and the change of the capacitance value of the varactor diodes are controlled by adjusting the DC voltage.

2. The ultra-wideband 2-bit phase reconfigurable reflectarray according to claim 1, characterized in that The bottom end of the microstrip balun is connected to the impedance converter through welding.

3. The ultra-wideband 2-bit phase reconfigurable reflectarray according to claim 1, characterized in that, The active microstrip circuit includes a single-pole four-throw switch composed of four PIN diodes and four RF channels composed of microstrip lines with different lengths and varactor diodes with different capacitance ratios.

4. A 2-bit phase reconfigurable reflectarray for ultra-wideband according to claim 1, characterized in that The DC bias circuit is a DC-blocking and AC-passing circuit composed of an inductor, a capacitor, and a resistor. Among them, the inductance value of the inductor is 83 nH, the capacitance value of the capacitor is 150 pF, and the resistance value of the resistor is 5 Ω.

5. A 2-bit phase reconfigurable reflectarray for ultra-wideband according to claim 1, characterized in that The dielectric constant of the upper dielectric substrate is 2.94, the thickness is 1.7 mm, and the tangent of the loss angle is 0.0017. The dielectric constant of the intermediate adhesive layer is 3.5, the thickness is 0.1 mm, and the tangent of the loss angle is 0.0042. The dielectric constant of the lower dielectric substrate is 2.65, the thickness is 0.9 mm, and the tangent of the loss angle is 0.0015.

6. The ultra-wideband 2-bit phase reconfigurable reflectarray according to claim 1, wherein The tightly coupled antenna is a single-layer printed circuit board, and the dielectric constant of its dielectric substrate is 2.94, the tangent of the loss angle is 0.0017, and the thickness is 1.7 mm.

7. A 2-bit phase reconfigurable reflectarray for ultra-wideband according to claim 1, characterized in that The line width of the microstrip lines in the active microstrip circuit is the line width corresponding to a characteristic impedance of 50 ohms.

8. The electromagnetic wave regulation method based on the reflection array according to any one of claims 1-7, characterized in that, It includes the following steps: After the tightly coupled antenna converts the spatial electromagnetic wave into a guided wave, the guided wave is conducted to the impedance converter through the microstrip balun; the impedance converter conducts the guided wave to the first microstrip line in the active microstrip circuit through the first metal via; by switching the DC bias voltage between 0V and 1.3V, the on-off of the PIN diode is regulated to realize the function of a single-pole four-throw switch, so as to select the RF channel for the subsequent propagation of the guided wave, that is, the second, third, fourth, or fifth microstrip line; in the selected RF channel, by changing the DC bias voltage of the varactor diode within the range of 0 - 15V, the capacitance value of the varactor diode on the subsequent path is changed, and the phase of the guided wave is dynamically regulated; finally, the guided wave with adjusted phase is reflected to the ground through the second metal via, returns along the original RF channel, and is emitted into space by the tightly coupled antenna, realizing the ultra-wideband 2-bit phase-reconfigurable electromagnetic wave regulation.

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