Ion source including porous baffle

Abstract

An embodiment provides an ion source including a porous baffle, including: a source body located on one side of an output portion and supplying a voltage for generating ions to an anode electrode of the output portion; and an output part which generates ions between the anode electrode and the cathode electrode by using the voltage and outputs the ions to the inner space of the chamber in a vacuum state, and is provided with a porous baffle plate along the ion output direction.

Description

Technical Field

[0001] The present embodiment relates to an ion source including a porous baffle, which can effectively remove static electricity in an internal space of a chamber through the porous baffle. Background Art

[0002] Static electricity is generated by various reasons including friction, peeling, etc. The static electricity can be generated in various environments such as solids, liquids, insulators, conductors, etc. The generated static electricity generates positive and negative charges in equal amounts, but in actual processes, due to the difference in the two static capacitances, in most cases only one polarity of static electricity is exhibited.

[0003] In the process of manufacturing electronic devices such as memory elements, flat panel display devices, and integrated circuits, static electricity is generated, causing foreign matter to adhere to the electronic devices or causing damage to patterns due to static electricity discharge.

[0004] Various methods have been proposed to suppress or eliminate the generation of static electricity, and the main method is to use an ionizer to remove static electricity. The ionizer generates positive ions and negative ions and discharges them into the air using a fan or compressed air. The discharged ions neutralize the charged ions by providing ion particles opposite to the charged ions of the substrate that generates static electricity, thereby removing static electricity.

[0005] However, the existing ionization device for removing static electricity has the problem of being difficult to apply to a vacuum environment that needs to maintain high cleanliness because it discharges ions into the air in a non-vacuum environment. The existing static elimination process includes two steps: after forming a thin film of an electronic device in a vacuum environment, another static elimination process is used in a non-vacuum environment to remove static electricity.

[0006] Conventional static elimination devices cannot immediately eliminate static electricity generated during thin film formation because the thin film process and static elimination process are separate. Therefore, there are limitations in preventing damage to components caused by static electricity.

[0007] In addition, conventional static electricity elimination devices directly irradiate the substrate with ion particles and ion light generated during the ion generation process, thereby causing damage to the substrate. Summary of the invention

[0008] Issues to be solved

[0009] In this context, an object of this embodiment is to provide a technology to improve the above-mentioned problem.

[0010] Another object of the present embodiment is to provide a technology for minimizing the impact on the process conditions of the chamber, thereby minimizing the impact on the specific process performed by the static eliminator in the chamber.

[0011] Another object of this embodiment is to provide a technology for effectively eliminating static electricity formed in the internal space of the chamber.

[0012] Another object of this embodiment is to provide a technology that minimizes the modification of the chamber, thereby allowing the addition of an electrostatic elimination device without replacing the existing chamber.

[0013] Problem Solution

[0014] To achieve the objective, one embodiment provides an ion source including a porous baffle, comprising: a source body, located on one side of an output portion and supplying a voltage for generating ions to an anode electrode of the output portion; and an output portion, utilizing the voltage to generate ions between the anode electrode and the cathode electrode and outputting them to an internal space of a chamber in a vacuum state, wherein a porous baffle is arranged along the direction of the ion output.

[0015] The vacuum state is 10 -3 ~10 -8 The atmosphere of torr.

[0016] The chamber includes a service port for connecting utilities and auxiliary devices and a viewing port for visually observing the interior of the chamber.

[0017] The output portion further includes an opening portion opened toward one side of the chamber, and the anode electrode is exposed along the chamber direction through the opening portion.

[0018] The cathode electrode includes a central cathode electrode located at the center of the opening and an edge cathode electrode located at the edge of the opening.

[0019] The ion source does not have a vacuum pump and an ionizing gas injection device.

[0020] The pore shapes of the porous baffle include circular, elliptical, polygonal and honeycomb structures.

[0021] The output intensity of the ions is adjusted according to the thickness of the porous baffle.

[0022] The porous baffle plate further comprises a baffle plate combining portion capable of combining a plurality of porous baffle plates.

[0023] The porosity of the porous baffle is 10% to 90%.

[0024] The porous baffle is integrated with an opening portion opened toward one side of the chamber.

[0025] An insulating portion is provided at a position where the porous baffle plate is joined to the opening.

[0026] The porous baffle controls at least one of the intensity and direction of the output ions by adjusting at least one of the distribution of pores, the size of the pores, the spacing between the pores and the shape of the pores.

[0027] The porous baffles are connected by baffle connecting parts.

[0028] The baffle connecting portion includes a baffle connecting length adjusting portion for adjusting the length in a sliding manner.

[0029] The baffle connecting portion further includes a tilting unit for adjusting the angle of the porous baffle to control the output direction of the ions.

[0030] The invention also includes an output adjustment unit for adjusting at least one of an output range and an intensity of ions.

[0031] The output adjustment unit includes at least one of an insulating device and a variable resistance device.

[0032] The baffle is insulated by the insulating device to increase at least one of the output range and intensity of ions.

[0033] The resistance value is controlled by the variable resistor device to adjust at least one of the output range and intensity of the ions.

[0034] Effects of the Invention

[0035] As described above, according to this embodiment, there is an effect of improving the above-mentioned problem.

[0036] Furthermore, according to the present embodiment, the influence on the process conditions of the chamber is minimized, thereby minimizing the influence on a specific process performed by the static eliminator in the chamber.

[0037] Furthermore, according to this embodiment, static electricity generated in the internal space of the chamber is effectively eliminated.

[0038] Furthermore, according to this embodiment, the modification of the chamber is minimized, so that the static elimination device can be added without replacing the existing chamber.

[0039] The technical problem to be solved by the present invention is not limited to the above-mentioned technical issues, and other technical issues not mentioned will become clear to those skilled in the art through the following contents. BRIEF DESCRIPTION OF THE DRAWINGS

[0040] Figure 1 A schematic diagram of a chamber for performing a specific process under a vacuum state;

[0041] Figure 2 is a schematic diagram of an ion source combined with a chamber according to an embodiment;

[0042] Figure 3 is a side cross-sectional view of an ion source according to an embodiment;

[0043] Figure 4 is a schematic diagram of a portion of an upper side of an ion source according to an embodiment;

[0044] Figure 5 A first exemplary diagram of an ion source having a porous baffle according to an embodiment;

[0045] Figure 6 is a distribution diagram of ions formed inside a chamber due to the porous baffle according to an embodiment;

[0046] Figure 7 A first exemplary diagram of an ion source having a plurality of porous baffles according to an embodiment;

[0047] Figure 8 A first exemplary diagram of an ion source having a thick porous baffle according to an embodiment;

[0048] Fig. 9 A schematic diagram of changing the output direction of ions according to the distribution of gaps in a porous baffle;

[0049] Fig.10 A second exemplary diagram of an ion source having a porous baffle according to an embodiment;

[0050] Fig.11 A second exemplary diagram of an ion source having a plurality of porous baffles according to an embodiment;

[0051] Fig.12 A second exemplary diagram of an ion source having a thick porous baffle according to an embodiment;

[0052] Fig.13 A schematic diagram for adjusting the angle of the porous baffle;

[0053] Fig.14 is a schematic diagram of a baffle connecting portion for connecting a porous baffle to an ion source according to an embodiment;

[0054] Fig.15 An example diagram of the shape of a porous baffle according to an embodiment;

[0055] Fig.16 is a schematic diagram of the flow of ions according to the porous baffle;

[0056] Fig.17 This is a schematic diagram of changing the flow of ions through the output adjustment unit.

[0057] * Reference Numbers *

[0058] 1: Object

[0059] 10: Chamber

[0060] 20: Service port

[0061] 30: Observing port

[0062] 40: Process port

[0063] 200: Ion forming device

[0064] 210: Ion Source

[0065] 211: Source Subject

[0066] 212: Output

[0067] 220: Observation port combination structure

[0068] 310: Anode electrode

[0069] 320: Cathode electrode

[0070] 322: Center cathode electrode

[0071] 324: Edge cathode electrode

[0072] 326: Cathode electrode connection part

[0073] 330: Output box

[0074] 331: Box joint

[0075] 332: Combined components

[0076] 340: Perforated baffle

[0077] 341: Baffle connection

[0078] 342: Baffle connection length adjustment part

[0079] 343: Tilt unit

[0080] 343a: hinge housing

[0081] 343b: Rotary hinge

[0082] 343c: Fixed unit

[0083] 344: Baffle slot

[0084] 345: Porous structure

[0085] 346: Baffle joint Specific embodiments

[0086] Below, some embodiments of the present invention are described in detail with reference to the exemplary drawings. It should be noted that when assigning marks to the structures in the drawings, the same marks are assigned to the same structures as much as possible even in different drawings. In addition, in the process of describing the present invention in detail, if it is considered that the specific description of the relevant disclosed function or structure hinders the understanding of the present invention, its detailed description will be omitted.

[0087] In addition, when describing the constituent elements of the present invention, terms such as first, second, A, B, (a), (b) and the like may be used. The terms are only used to distinguish one component from another component, and the nature or order of the corresponding components is not limited by the terms. When it is described that a component is "connected", "combined" or "coupled" to another component, the component may be directly connected or coupled to the other component, but other components may also be "connected", "combined" or "coupled" between the components.

[0088] Figure 1 A schematic diagram of a chamber that provides a space for performing a specific process on an object under a vacuum state.

[0089] See also Figure 1 , within the chamber 10 , a specific process may be performed on the object 1 under a high vacuum state.

[0090] In the field of process technology, the pressure range of 10-3 to 10-9 Torr is considered a high vacuum state. In a high vacuum state, most of the air molecules are removed, and collisions between gas molecules in the usual sense are almost non-existent. In addition to the high vacuum state, a medium vacuum state and a low vacuum state can also be distinguished, where the medium vacuum state is generally understood to be within the pressure range of 1 to 10-3 Torr, and the low vacuum state is understood to be within the pressure range of 1 Torr under atmospheric pressure. The medium vacuum state is suitable for evaporation, drying and certain coating processes, while the low vacuum state is suitable for commercial purposes such as vacuum cleaners and vacuum packaging machines.

[0091] In the field of process technology, many processes are carried out under high vacuum.

[0092] High vacuum deposition technology is a typical example. High vacuum deposition technology is a technology that evaporates the precursor of the material to be deposited into a gas phase in a vacuum atmosphere, thereby forming a condensed phase of a thin film on the surface of the substrate. This process can be used as a method to transfer materials from one surface to the surface of an object. Since it is carried out in a high vacuum environment, it is also called high vacuum deposition. High vacuum deposition technology can be used in the manufacturing process of semiconductors, optical coatings, and various sensors and electronic devices, and can be used to highly purify materials or obtain extremely thin coatings. Well-known high vacuum depositions include physical vapor deposition (PVD), chemical vapor deposition (CVD), etc. PVD may include the process of physically evaporating materials and transporting the vapor to the object, while CVD may include the process of making the material to be deposited into a gas and placing the gas on the object 1 to cause a chemical reaction for deposition.

[0093] Physical vapor deposition (PVD) includes vacuum deposition (Evaporation), sputtering (Sputtering), ion plating (Ion Plating) and other processes, while chemical vapor deposition (CVD) includes APVCD, LPCVD, PECVD, HDPCVD, ALCVD and other processes.

[0094] According to an example of the present invention, the specific process performed inside the chamber 10 may include at least one of vacuum PVD (Physical Vapor Deposition) and vacuum CVD (Chemical Vapor Deposition) processes, preferably vacuum PVD (Physical Vapor Deposition), and more preferably vacuum deposition (Evaporation).

[0095] In addition, an organic deposition process can be performed on the object 1 in the chamber 10. In the case of an organic deposition process, the process is often performed under a high vacuum state. In the organic deposition process, it is necessary to maintain a fixed purity of the organic, and it may be more advantageous to maintain the purity of the organic under a high vacuum state because the interaction with other gases is minimized. In addition, under a high vacuum state, high-quality coatings with the desired thickness and structure can be produced, and these characteristics are also beneficial to the organic deposition process. In addition, under a high vacuum state, molecules can move in a unidirectional straight line from the source to the object 1, and there are fewer collisions or reactions with other gases under a high vacuum state, so the deposition efficiency is higher, which is why the process under a high vacuum state is used for the organic deposition process.

[0096] The chamber 10 may be connected to or include a device for maintaining a high vacuum state. For example, the chamber 10 may be connected to a vacuum pump for removing gas from the chamber 10 and maintaining a vacuum state, and may also include a vacuum gauge for continuously monitoring and measuring the pressure in the chamber 10 .

[0097] In addition, the chamber 10 is not limited to a process chamber, and may include a non-process chamber, and may also include various chambers operating in a vacuum state.

[0098] To perform a specific process within the chamber 10 , the chamber 10 may be formed with a plurality of ports 20 , 30 , 40 .

[0099] The chamber 10 may be formed with a process port 40. The process port 40 may be a connection point directly related to a specific process performed in the chamber 10. Gases, liquids, or materials required for a specific process may be delivered to the chamber 10 through the process port 40. Or a device for measuring or analyzing conditions related to the execution of a specific process in the chamber 10 may be connected to the process port 40. The process port 40 may be custom designed according to the requirements of a specific process and may be limited for other uses. For example, the process port 40 may be a port for supplying reaction gases in chemical vapor deposition, a port for supplying target materials in physical vapor deposition, etc.

[0100] The chamber 10 may be formed with a service port 20. The process port 20 may be a connection point related to maintenance and management of the chamber 10. The service port 20 may be used to connect utilities and auxiliary devices, such as a vacuum pump, a cooling system, a power supply, a vacuum gauge, and the like.

[0101] The chamber 10 may be formed with a view port 30. The administrator may directly observe the process conditions in the chamber 10 with the naked eye through the view port 30. Alternatively, a management device (such as a camera or other optical device) may be connected to the view port 30 so that the administrator can remotely monitor the process conditions in the chamber 10. The perspective window included in the view port 30 may be made of materials such as tempered glass, ceramics, industrial diamond, quartz, industrial sapphire and reinforced plastic. These materials can withstand extreme environments, such as high vacuum and high temperature, and have high optical transparency. In addition, the view port 30 may also have a sealing structure to prevent vacuum leakage so as not to affect the high vacuum state in the chamber 10.

[0102] exist Figure 1 In the figure, the service port 20 is located higher than the observation port 30, but the present invention is not limited thereto. The service port 20 and the observation port 30 may be located at different positions.

[0103] Certain processes may be performed in the chamber 10 including these structures and devices, and at this time, static electricity generated on the object 1 may become a problem.

[0104] There are various reasons why static electricity is formed on the object 1. For example, static electricity may be generated due to friction between the object 1 and another object; or static electricity may be generated on the object 1 due to uneven charge distribution caused by deposition or etching in a specific process step; or static electricity may be generated and accumulated due to the effect of an insulating layer disposed on the object 1 that hinders the movement of charges.

[0105] These static electricity may form a voltage high enough to damage the microstructure of object 1, and may also generate a force that attracts or repels tiny particles in chamber 10 to object 1, causing process defects. It may also affect the electrical performance of object 1 and reduce the overall performance of the process equipment.

[0106] In order to solve these problems, an embodiment of the present specification provides an ion generating device for removing static electricity in a chamber 10, especially static electricity generated on an object 1. The ion generating device minimizes the influence on the process conditions of the chamber 10, thereby minimizing the influence on the specific process performed by the ion generating device in the chamber 10, and minimizes the modification of the chamber 10, so that the ion generating device can be added without replacing the existing chamber 10.

[0107] The ion forming device may form ions in the chamber 10 using the high vacuum state of the chamber 10 without additionally supplying a process gas.

[0108] The ion forming device may include an ion source, and an electric field is formed between electrodes disposed in the ion source. Electrons leaving one electrode in the ion source are accelerated and output in the electric field between the electrodes, and the accelerated electrons collide with gas molecules in a high vacuum state in the chamber 10, thereby ionizing these gas molecules to form a plurality of ions. In addition, these ions move to the object 1 and eliminate static electricity formed on the object 1. This phenomenon in a high vacuum state is also called Townsend discharge, but the present invention is not limited thereto.

[0109] The ion forming device does not need to supply additional process gas, nor does it include a separate vacuum device, so it can minimize the impact on the process conditions of the chamber 10. Further, the ion forming device does not need to supply additional process gas, nor does it include a separate vacuum device, so it can simplify the structure and minimize the modification of the chamber 10.

[0110] The ion source may be integrated into the access port 20 or the viewing port 30 to minimize modifications to the chamber 10 .

[0111] Figure 2FIG. 4 is a schematic diagram of an ion source combined with a chamber according to an embodiment.

[0112] See also Figure 2 The ion forming device 200 may include an ion source 210 and an observation port combining structure 220. The observation port combining structure 220 may be a device that helps the ion source 210 to be combined with the observation port 30.

[0113] The observation port combination structure 220 may include a first area for setting a perspective window so that the observer can observe the inner space of the chamber 10 with naked eyes, and a second area for setting a through hole for combining with the ion source 210. The first area and the second area may be fixed to the chamber 10 via an observation port combination frame.

[0114] The perspective window arranged in the first area may be designed with rounded corners so as to be closely integrated with the first area.

[0115] The first area may include an area 1-1 provided with a first perspective window for observing one side of the internal space of the chamber 10, and an area 1-2 provided with a second perspective window for observing the other side of the internal space of the chamber 10, and the area 1-1 and the area 1-2 may be located at opposite positions. In addition, the area 1-1 and the area 1-2 may include a perspective window combination frame for fixing the perspective window to the chamber 10.

[0116] The second region may be disposed between the 1-1 region and the 1-2 region. In addition, the second region may include an adapter for coupling the ion source 210 to the through hole. Here, the adapter may include a first connection structure coupled to the through hole, and a second connection structure coupled to the output portion of the ion source 210. Furthermore, the through hole and the output portion of the ion source 210 may have different cross-sectional dimensions.

[0117] In addition, the ion forming device 200 may include a service port coupling structure (not shown) to replace the observation port coupling structure 220. The service port coupling structure (not shown) may be a device that helps the ion source 210 to be coupled to the service port 20. According to one embodiment, the service port coupling structure (not shown) may not be provided separately, and the function of the service port coupling structure (not shown) may be replaced by a partial structure of the ion source 210.

[0118] Further, the ion forming device 200 may further include a device for adjusting an output direction of the ions so as to form ions along a direction of the object 1 on which a specific process is performed.

[0119] The ion forming device 200 may include an adapter connecting one port of the chamber 10 and the ion source 210, wherein the adapter may include a first connection structure coupled to a through hole formed at one port of the chamber, and a second connection structure coupled to an output portion exposing the anode electrode. Here, the through hole coupled to the first connection structure and the output portion coupled to the second connection structure may have different cross-sectional sizes.

[0120] The first connection structure may include a through-hole insertion structure provided along the inner space direction of the chamber 10 and inserted into the through-hole, and an output tube extension structure extending the output tube formed inside the through-hole insertion structure. Here, the outer diameter of the through-hole insertion structure may be the same as the inner diameter of the through-hole so that the through-hole insertion structure is inserted into the inside of the through-hole for contact.

[0121] In addition, ions can expand or reduce the output direction through the output tube, thereby adjusting the output intensity.

[0122] The first connection structure and the second connection structure may include a plurality of holes to couple the coupling components. In addition, the first connection structure may include a sealing component disposed opposite to the through hole and made of a flexible material, and the second connection structure may include a sealing component disposed opposite to the output portion and made of a flexible material.

[0123] The first connection structure may further include a baffle connection structure to install the porous baffle along the inner space direction of the chamber 10. Here, the porous baffle may be formed into a circular, rectangular, conical, or polygonal shape with at least one groove, and ions may be output along the groove direction. In addition, the porous baffle and the baffle connection structure may be connected to each other through a baffle connection portion to be separated from each other.

[0124] The ion source 210 may include a source body 211 and an output portion 212 .

[0125] The source body 211 may include a power supply device. The power supply device may supply a specific voltage to the electrode provided at the output portion 212. Here, the specific voltage may be a high voltage, which may be a voltage equivalent to hundreds to thousands of volts. The power supply device may receive a high voltage from the outside through a cable and supply it to the electrode, or may receive a voltage having a voltage level lower than the high voltage from the outside and supply it to the electrode after increasing the voltage level through power conversion.

[0126] The source body 211 may be enclosed in a metal box to prevent electromagnetic waves generated by a power supply device and the like from propagating to the outside including the chamber 10 and the like.

[0127] The output portion 212 is open at one side facing the service port 20, while all other sides are closed. The output portion 212 may be in communication with the chamber 10 in a high vacuum state through the service port 20, and may not be in communication with any other space. For example, the output portion 212 may not be in communication with the source body 211, nor may it be in direct communication with the external space of the chamber 10.

[0128] If the internal space of the chamber 10 is maintained in a high vacuum state (e.g., 10-3 to 10-9 Torr, preferably 10-5 to 10-9 Torr), the output portion 212 connected thereto can also be maintained in a high vacuum state. Therefore, the ion forming device according to one embodiment does not need to supply additional process gas, nor does it include a separate vacuum device, so the impact on the process conditions of the chamber 10 can be minimized. Further, the ion forming device according to one embodiment does not need to supply additional process gas, nor does it include a separate vacuum device, so the structure can be simplified, minimizing the modification of the chamber 10.

[0129] In the high vacuum state atmosphere, when the source body 211 provides a specific voltage to the electrode of the output part 212 , ions may be formed in the inner space of the chamber 10 in the high vacuum state.

[0130] The ions formed in the inner space of the chamber 10 may come into contact with the object 1 to eliminate static electricity of the object 1 .

[0131] The inner spaces of the chamber 10 and the output part can be connected to each other and share a vacuum state of 10-3 to 10-9 Torr, preferably 10-5 to 10-9 Torr.

[0132] In the chamber 10, a specific process requiring vacuum may be performed. Here, the specific process may include at least one of a vacuum PVD (Physical Vapor Deposition) process and a vacuum CVD (Chemical Vapor Deposition) process for depositing a material on the object 1. In addition, the specific process may also include a vacuum process for depositing organic matter on the object. To perform the specific process, the chamber 10 may be maintained in a vacuum state.

[0133] The vacuum state may be 10-3 to 10-9 Torr, preferably 10-5 to 10-9 Torr.

[0134] Since the internal spaces of the chamber 10 and the output unit are communicated with each other, it is not necessary to provide a vacuum pump and an ionized gas injection device.

[0135] The chamber 10 may include a service port 20 for connecting utilities and auxiliary devices and a view port 30 for visually observing the interior of the chamber.

[0136] The output part 212 may further include an opening portion open toward one side of the service port 20 or the observation port 30, and the chamber 10 and the output part 212 may be connected through the opening portion. Specifically, the chamber 10 and the output part 212 may be connected through a connection portion provided at the edge of the opening portion.

[0137] The coupling part may include at least one selected from the group consisting of a service port coupling structure (not shown), an observation port coupling structure 220, a shell joint, a coupling component and a sealing component, and the chamber 10 and the output part 212 may be tightly coupled by the coupling part to prevent fluid from flowing in from the outside.

[0138] Figure 3 is a side cross-sectional view of an ion source according to an embodiment, and Figure 4 FIG. 4 is a schematic diagram of a portion of an upper surface of an ion source according to an embodiment.

[0139] See also Figure 3 and Figure 4 The ion source 210 may include a source body 211 and an output portion 212 .

[0140] The output portion 212 may include an anode electrode 310 , a cathode electrode 320 , an output box 330 , and the like.

[0141] The output box 330 may have a structure in which the side facing the service port 20 or the observation port 30 is open and the other sides are closed. The output box 330 may be provided with a space for arranging the anode electrode 310 and the cathode electrode 320, and may be formed into a structure in which one side is open and the other sides are closed so as to communicate with the internal space of the chamber in a high vacuum state.

[0142] The output box 330 may include a box joint portion 331 formed in parallel with the chamber frame, and the box joint portion 331 is tightly combined with the chamber frame through the observation port joint structure 220 to prevent the interior of the output box 330 from directly communicating with the external space of the chamber. The box joint portion 331 may be tightly combined with the chamber frame by a joint component 332 (such as a bolt), and a sealing component (such as an O-ring) may be provided on the joint surface.

[0143] The anode electrode 310 and the cathode electrode 320 may be installed in the space formed inside the output box 330 .

[0144] The cathode electrode 320 may include a central cathode electrode 322, an edge cathode electrode 324, and a cathode electrode connecting portion 326. The central cathode electrode 322 may be located at the center of the opening surface of the output box 330. When viewed from the side of the observation port 30, the central cathode electrode 322 may be located at the center of the opening portion of the observation port 30. The edge cathode electrode 324 may be located at the edge of the opening surface of the output box 330. The edge cathode electrode 324 may be formed along the edge of the opening surface of the output box 330. If the opening surface is circular, the edge cathode electrode 324 may also be circular (hollow donut shape).

[0145] The central cathode electrode 322 and the edge cathode electrode 324 may be electrically connected to the cathode electrode connection portion 326 and have the same potential. A magnet may be further provided on the cathode electrode connection portion 326 or inside the central cathode electrode 322 or inside the edge cathode electrode 324. The magnetic field generated by the magnet may affect the movement of the electrons emitted by the cathode electrode 320, thereby adjusting the moving direction or moving speed of the electrons.

[0146] The power supply device provided to the source body 211 may supply a specific voltage to the anode electrode 310. In addition, according to the specific voltage, an electric field may be formed between the anode electrode 310 and the cathode electrode 320, and ions may be formed in the inner space of the chamber through the electric field.

[0147] The output portion 212 may not have a separate cooling device or a separate process gas supply device. In the prior art, there is also a case where a separate cooling device combined with the anode electrode is attached to cool the anode electrode, but in the ion source 210 according to one embodiment, a separate cooling device is not required because a high vacuum atmosphere is used, so that power consumption is low, heat generation is low, and no separate cooling device is required. In addition, in the prior art, a separate process gas supply device is also included to form ions, but in the ion source 210 according to one embodiment, ions can be formed without additional supply of process gas because a high vacuum atmosphere is used.

[0148] The cathode electrode 320 includes a first cathode electrode arranged on one side of the edge of an opening portion open to one side of the chamber 10, a third cathode electrode arranged on the other side of the edge of the opening portion, and a second cathode electrode arranged in the center of the opening portion, and the output direction of the ions is determined according to the electrode spacing between the anode electrode 310 and the cathode electrode 320.

[0149] The ion source 210 may be coupled to a port other than a port used for a specific process. Specifically, the ion source 210 may be coupled to the service port 20 or the observation port 30. The service port 20 and the observation port 30 may be located at different heights relative to the object 1. Therefore, it is necessary to adjust the output direction of ions output from the ion source 210.

[0150] The electrode interval may include a first electrode interval between the anode electrode 310 and the first cathode electrode, a second electrode interval between the anode electrode 310 and the second cathode electrode, and a third electrode interval between the anode electrode 310 and the third cathode electrode.

[0151] Here, at least two electrode spacings selected from the first electrode spacing, the second electrode spacing and the third electrode spacing may have different lengths, so that ions may be directed toward the cathode electrode with the shortest length among the first electrode spacing, the second electrode spacing and the third electrode spacing.

[0152] In addition, the object 1 is spaced apart from the ion source 210 , and is provided on an extension line in a direction in which the cathode electrode having the shortest length among the first electrode spacing, the second electrode spacing, and the third electrode spacing is located.

[0153] Preferably, the first electrode has the longest distance, and the third electrode has the shortest distance, so that the ions are guided to be output in the direction of the third cathode electrode.

[0154] In addition, the object 1 is provided apart from the ion source 210 , and is provided on an extension line of the direction in which the third hidden electrode is located.

[0155] In the ion forming device 200 , the output direction of ions can be determined according to the shape of the edge cathode electrode 324 .

[0156] A portion of the edge of the edge cathode electrode 324 may be tapered, while the remaining edge may be cylindrical with a fixed thickness. Specifically, in the tapered portion of the edge cathode electrode 324, the edge in the direction of the output portion 212 has a fixed thickness, while a portion of the edge in the direction of the chamber 10 is thinner. Therefore, ions may be output in the direction of the tapered portion of the edge cathode electrode 324. In addition, the inclination angle of the tapered portion of the edge cathode electrode 324 may determine the degree of diffusion of ions.

[0157] In addition, the edge cathode electrode 324 may be cylindrical, and the inner diameter becomes larger toward the chamber 10. Therefore, the shape of the edge cathode electrode 324 can make the ions diffuse and output in a trumpet shape.

[0158] In addition, the edge cathode electrode 324 may include a plurality of coupling grooves along a direction toward the output portion 212 .

[0159] The output portion 212 may further include a porous baffle, which may be disposed on one side of the cathode electrode 320 along the ion output direction to prevent ions from being directly projected onto the object 1. Specifically, the porous baffle may be disposed on one side of the central cathode electrode 322 along the ion output direction, so that the ions are diffused to form ions on the entire surface of the object 1.

[0160] The ions are accelerated by the magnetic field generated between the electrode gaps and output from between the central cathode electrode 322 and the edge cathode electrode 324. However, a porous baffle is provided on one side of the central cathode electrode 322 to minimize obstruction to the flow of output ions.

[0161] The porous baffle is disposed on one side of the central cathode electrode 322 , and may be located at the center or edge of the central cathode electrode 322 , and is preferably located at the center of the central cathode electrode 322 .

[0162] The porous baffle can be connected by a baffle connecting portion to be separated from the central cathode electrode 322. The baffle connecting portion may include a baffle connecting length adjusting portion for adjusting the length to control the diffusion degree of ions. In addition, the baffle connecting portion also includes a tilting unit for adjusting the angle of the porous baffle to control the output direction of the ions. Here, the tilting unit may include a hinge housing, a rotating hinge and a fixing unit.

[0163] The porous baffle can be formed into a circular, rectangular, conical or polygonal shape with at least one slot. In this case, ions can also be output along the direction of the slot.

[0164] The ion forming device 200 may further include an ion sensor for measuring the ion concentration at a position in the inner space of the chamber 10 . The ion sensor is disposed in the inner space of the chamber 10 via a bracket extending along the inner space direction of the chamber 10 .

[0165] In addition, the ion forming device 200 may include an adapter connecting a port of the chamber 10 and the ion source 210, wherein the adapter may include a first connection structure combined with a through hole formed at a port of the chamber, and a second connection structure combined with an output portion 212 exposing the anode electrode 310.

[0166] The first connection structure may further include a baffle connection structure to install the porous baffle along the inner space direction of the chamber 10. In addition, the porous baffle and the baffle connection structure may be connected by the baffle connection part to be separated from each other. Here, the ion sensor may be located on one side of the porous baffle to measure the ion concentration of the inner space of the chamber 10.

[0167] The monitoring cable connected to the ion sensor can be arranged along the baffle connection portion. The ion sensor is connected to the ion source control device located outside the chamber 10 through the monitoring cable, and the monitoring cable can be arranged through one side of the first connection structure of the adapter.

[0168] The control method for the ion forming device 200 is to measure the ion concentration at a position in the internal space of the chamber 10 by an ion sensor arranged in the internal space of the chamber 10, and adjust the voltage level supplied from the source body 211 to the anode electrode 310 according to the measured ion concentration to adjust the amount of ions generated from the ion forming device 200.

[0169] If the measured ion concentration is lower than the reference concentration, the voltage level supplied from the source body 211 to the anode electrode 310 may be increased to increase the amount of ions generated. Conversely, if the measured ion concentration exceeds the reference concentration, the voltage level supplied from the source body 211 to the anode electrode 310 may be restored to an initial value to reduce the amount of ions generated.

[0170] In addition, the ion source 210 can be connected to a port of the chamber 10 through an adapter, wherein the adapter may include a first connection structure connected to a through hole formed at a port of the chamber 10, an extension structure connected to the through hole, and a second connection structure connected to the output portion 212.

[0171] The extension structure can be arranged perpendicularly to the first connection structure so that ions are output from the ion source 210 to the inside of the chamber 10. In addition, the extension structure can also be arranged obliquely to the first connection structure so as to adjust the output direction of ions output from the ion source 210.

[0172] If the extension structure is tilted, the extension structure can be connected to the first connection structure directly coupled to a port of the chamber 10 to communicate with the chamber 10. At this time, the extension structure can be coupled to the first connection structure in a tilted state to adjust the output direction of ions output from the output portion 212 connected to the second connection structure.

[0173] By adjusting the output direction of ions output from the ion source 210 through the adapter, more ions can be generated at a specific position of the inner space of the chamber 10. Therefore, when performing a specific process that may generate uneven static electricity inside the chamber 10, static electricity can be effectively eliminated by adjusting the inclination of the extended structure.

[0174] The elongated structure may be tilted in at least one direction of the upper side, the lower side, the left side, and the right side. The tilting direction of the elongated structure may be determined by the position of the object 1, a specific process performed in the inner space of the chamber 10, and the like.

[0175] In addition, the inclination direction of the extension structure may be a direction that does not block the setting position of the perspective window. For example, the extension structure may be inclined in at least one direction of the lower side, the left side, and the right side, but not inclined in the upper side direction where the perspective window is set. Alternatively, if the perspective window is set on the lower side, the extension structure may also be inclined in at least one direction of the upper side, the left side, and the right side.

[0176] The object 1 may be located on the extension line of the extension structure to effectively remove static electricity from the surface of the object 1 in the inner space of the chamber 10. Thus, the ions output from the ion source 210 may effectively remove static electricity from the object 1.

[0177] In addition, a device capable of controlling the degree of ion diffusion may be used to prevent damage caused by ion direct irradiation to the surface of the object 1. For example, a baffle may be installed on the extension line of the center of the through hole for outputting ions to prevent ions from directly irradiating the object 1.

[0178] In addition, the output intensity of the ions can be controlled by adjusting the length of the extension structure. Specifically, if the length of the extension structure is shorter, the output intensity is stronger due to fewer collisions between the output ions or between the ions and the internal gas molecules. However, if the length of the extension structure is longer, the output intensity is weaker due to more collisions between the output ions or between the ions and the internal gas molecules.

[0179] The extension structure may further include a baffle supporting structure to install the baffle along the inner space direction of the chamber 10 .

[0180] The baffle may be disposed along the direction in which the ions are output to prevent the ions from being directly irradiated onto the object 1. Specifically, the baffle may be located in the direction in which the ions are output so that the ions are diffused to form ions on the entire surface of the object 1.

[0181] The baffle can be located at the center of the through hole as the channel for ion output to effectively control the output direction of the ions. Therefore, the baffle support structure can be extended along the center of the through hole so that the baffle is located on the extension line of the center of the through hole.

[0182] The baffle support structure may include a baffle support length adjustment portion for adjusting the position of the baffle. The baffle support length adjustment portion may be used to adjust the position of the baffle to be closer to or farther from the center of the through hole. Since the ion concentration formed in the internal space of the chamber 10 may be changed according to the position of the baffle, the baffle support length adjustment portion may be used to change the position of the baffle according to a specific process performed in the chamber 10.

[0183] The baffle support structure can be fixed on the first connection structure through a groove formed on one side of the through hole. The baffle support structure is fixed in this way, so that the baffle is stably arranged on the extension line of the center part of the through hole.

[0184] In addition, the extension structure may further include a plurality of baffle supporting structures to install a plurality of baffles along the inner space direction of the chamber 10 .

[0185] In a specific process performed in the chamber 10, the surface damage of the object 1 is likely to occur or less static electricity is generated. In this case, the less the amount of ions formed in the internal space of the chamber 10, the better. Therefore, a plurality of baffle support structures can be installed on the extension structure and a plurality of baffles can be arranged thereto to reduce the amount of ions formed in the internal space of the chamber 10.

[0186] The baffle can be located at the center of the through hole as the channel for ion output to effectively control the output direction of the ions. Therefore, multiple baffle support structures can be extended along the center of the through hole so that the baffle is located on the extension line of the center of the through hole.

[0187] In addition, the observation port 30 can be installed at the height of the observer's line of sight so that the observer can observe the internal space of the chamber 10 with the naked eye. Therefore, the position where the observation port 30 is installed can be at a different height from the position where the object 1 is located. Therefore, the ion forming device according to an embodiment of the present invention may include a device for adjusting the output direction of ions so as to output ions in the direction of the object 1 performing a specific process. Specifically, as a device for adjusting the output direction of ions, a baffle, a beam guide, an electrode shape, etc. may be included.

[0188] The second connection structure may be coupled to the output portion 212 of the ion source 210 .

[0189] The second connection structure may include a plurality of holes for coupling the coupling component, thereby coupling the output portion 212 of the ion source 210 and the adapter.

[0190] The second connection structure may include a sealing member made of a flexible material and disposed opposite to the output portion 212 of the ion source 210 , so that the ion source 210 and the chamber 10 are tightly combined to maintain the internal environment of the chamber 10 and the ion source 210 .

[0191] The output portion 212 may include an anode electrode 310 , a cathode electrode 320 , an output box 330 and a baffle 340 , wherein the baffle 340 is connected to the baffle support structure via a baffle connection portion 341 , and the baffle 340 is located in the output direction of ions to prevent ions from being directly emitted to the object 1 .

[0192] Ions are generated by electrons accelerated by the magnetic field generated between the electrodes. If the intensity of the output ions is strong, the ion particles and ion light generated during the ion generation process may damage the substrate of the object 1. Therefore, in order to prevent ions from damaging the substrate, the present invention prevents ions from directly irradiating the substrate by installing a baffle 340.

[0193] The baffle 340 is connected to the baffle support structure via the baffle connection portion 341, and the baffle 340 may be located in the direction of ion output. This ensures that the ions will not directly irradiate the object 1, and the ions are diffused and output at the periphery of the baffle 340, so that the ions can be formed on the entire surface of the object 1. Specifically, if the baffle 340 is not installed, the ions may be concentrated on one side of the object 1, but if the baffle 340 is installed, the ions will diffuse to all sides of the object 1, including the top and bottom, through the baffle 340, thereby effectively eliminating static electricity.

[0194] The extension structure may further include a baffle supporting structure to install the baffle along the inner space direction of the chamber 10 .

[0195] Specifically, the baffle support structure can be located on one side of the edge of the through hole so as not to hinder the traveling direction of the ions output through the through hole. The baffle support structure can be combined with the baffle connecting portion 341 by welding, screwing, etc. If necessary, a plurality of baffle support structures can be provided at a certain interval on the edge of the through hole so as to install a plurality of baffles 340.

[0196] The baffle 340 and the baffle supporting structure may be connected by the baffle connecting portion 341 to be spaced apart from each other.

[0197] The baffle connecting portion 341 may include a baffle connecting length adjusting portion for adjusting the length to control the diffusion degree of ions. For example, if the length of the baffle connecting portion is shorter, the ions will diffuse more widely, and if the length of the baffle connecting portion is longer, the ions will diffuse more narrowly.

[0198] In addition, a tilting unit capable of adjusting the installation angle of the baffle 340 may be provided at the connection between the baffle connecting portion 341 and the baffle 340. Thus, the angle of the baffle 340 may be adjusted so that ions may be outputted toward the direction of the object 1.

[0199] That is, by the installation angle of the baffle 340, while the ions are output toward the object 1, the baffle 340 controls the ions to diffuse without directly irradiating the object 1, thereby effectively eliminating the static electricity generated on the object 1 without damaging the object 1.

[0200] Furthermore, the cross-sectional area of ​​the baffle 340 can be adjusted to control the degree of ion diffusion. For example, when using a baffle 340 with a larger cross-sectional area, the ions can be diffused more widely, while when using a baffle 340 with a smaller cross-sectional area, the ions can be diffused more narrowly.

[0201] The baffle 340 may be connected to the baffle support structure via a baffle connection portion 341. The baffle connection portion 341 may be any shape that can fix the baffle 340.

[0202] The baffle connection portion 341 may include a baffle connection length adjustment portion 342 for adjusting the length to control the diffusion degree of the ions. Specifically, the closer the baffle 340 is to the output portion 212, the wider the ions diffuse, and the farther the baffle 340 is from the output portion 212, the narrower the ions diffuse. In addition, in the case where the ions diffuse widely, the intensity per unit area of ​​the ions reaching the object 1 is weak, and in the case where the ions diffuse narrowly, the intensity per unit area of ​​the ions reaching the object 1 is strong. That is, the output intensity of the ions reaching the object 1 can be controlled by adjusting the length of the baffle connection portion 341 through the baffle connection length adjustment portion 342.

[0203] The baffle connection length adjustment part 342 can be controlled by a control device (not shown) connected to the baffle connection part 341. Specifically, the user can arbitrarily adjust the length of the baffle connection length adjustment part 342 according to the internal ion concentration of the chamber 10 to control the output intensity of ions reaching the object 1.

[0204] In addition, a control device (not shown) connected to the baffle connecting portion 341 can automatically adjust the length of the baffle connecting length adjusting portion 342 according to a preset value based on the internal ion concentration of the chamber 10 .

[0205] Further, the baffle connecting portion 341 may also include a tilting unit 343 for adjusting the angle of the baffle 340 to control the output direction of the ions. As described above, the ion source 210 may be combined with a port other than a port for a specific process. Specifically, the ion source 210 may be combined with the service port 20 or the observation port 30. In addition, the service port 20 and the observation port 30 may be located at different heights relative to the object 1. Therefore, it is necessary to adjust the output direction of the ions output from the ion source 210.

[0206] In the present invention, the tilting unit 343 is disposed on the baffle connecting portion 341 so as to freely control the angle of the baffle 340 connected to the baffle connecting portion 341 .

[0207] The tilting unit 343 may include a hinge housing 343 a , a rotary hinge 343 b , and a fixing unit 343 c .

[0208] The hinge housing 343a may be formed as one piece, or may be formed as separate parts and combined by welding, screwing, etc. The hinge housing 343a may be in any shape that can fix the baffle 340 .

[0209] The rotating hinge 343b may be formed as a pin member to penetrate and connect one or both sides of the baffle 340 and one or both sides of the hinge housing 343a. The rotating hinge 343b is fixed to the hinge housing 343a while allowing the baffle 340 to freely adjust its angle.

[0210] The fixing unit 343c can adjust the angle of the baffle 340 by rotating the hinge 343b, and then fix the rotating hinge 343b to fix the angle. That is, the baffle 340 can determine the angle by rotating the hinge 343b, and fix the determined angle by the fixing unit 343c. Thus, while the ions can be output toward the object 1, the ions are prevented from being directly irradiated onto the object 1, and are instead generated in a dispersed manner.

[0211] Figure 5 FIG. 1 is a first exemplary diagram of an ion source having a porous baffle according to an embodiment of the present invention. Figure 6 FIG. 1 is a distribution diagram of ions formed inside the chamber due to the porous baffle according to one embodiment. Figure 7 FIG. 1 is a first exemplary diagram of an ion source having a plurality of porous baffles according to an embodiment of the present invention. Figure 8 FIG. 1 is a first exemplary diagram of an ion source having a thick porous baffle according to an embodiment of the present invention. Fig. 9 Schematic diagram of changing the output direction of ions according to the distribution of gaps in the porous baffle.

[0212] See also Figures 5 to 9 The output portion 212 may include an anode electrode 310 , a cathode electrode 320 , an output box 330 and a porous baffle 340 , wherein the porous baffle 340 may be disposed on one side of the cathode electrode 320 along the ion output direction.

[0213] Ions are generated by electrons accelerated by the magnetic field generated between the electrodes. If the intensity of the output ions is strong, the ion particles and ion light generated during the ion generation process may damage the substrate of the object 1. Therefore, in order to prevent the ions from damaging the substrate, the present invention prevents the output intensity and output direction of the ions irradiated to the substrate from being adjusted by installing a porous baffle 340.

[0214] In addition, the cathode electrode 320 may include a central cathode electrode 322, an edge cathode electrode 324, and a cathode electrode connecting portion 326. The central cathode electrode 322 may be located at the center of the opening surface of the output box 330. When viewed from the side of the observation port 30, the central cathode electrode 322 may be located at the center of the opening portion of the observation port 30. The edge cathode electrode 324 may be located at the edge of the opening surface of the output box 330. The edge cathode electrode 324 may be formed along the edge of the opening surface of the output box 330. If the opening surface is circular, the edge cathode electrode 324 may also be circular (hollow donut shape).

[0215] The porous baffle 340 may be formed in a circular, rectangular, conical, or polygonal shape with at least one baffle groove 344. As an example, the porous baffle 340 is circular or rounded polygonal, and the baffle grooves 344 are formed on one side and the other side. In addition, as another example, the porous baffle 340 is circular or rounded polygonal, and the baffle grooves 344 are recessed in all directions except one side.

[0216] The ions may be output in the direction of the baffle grooves 344 formed in the porous baffle 340. As an example, when the porous baffle 340 is formed in a circular or rounded polygonal shape and the baffle grooves 344 are formed on one side and the other side, a large amount of ions may be output in the direction of the one side and the other side having the baffle grooves 344, and a small amount of ions may be output in the direction without the baffle grooves 344. As another example, when the porous baffle 340 is formed in a circular or rounded polygonal shape and the baffle grooves 344 are recessed in all directions except one side, a large amount of ions may be output in the direction having the baffle grooves 344, and a small amount of ions may be output in the direction of the one side without the baffle grooves 344.

[0217] See also Figure 6 By using the porous baffle 340 through which ions can move, the ions formed inside the chamber 10 can be evenly distributed. Specifically, in the absence of the porous baffle, ions are generated between the anode electrode 310 and the cathode electrode 320 of the ion source 210 and are distributed in large quantities in a specific space inside the chamber 10 ( Figure 6 However, in the case of a porous baffle 340, the ions passing through the porous baffle 340 are filled into the space with less ion distribution, thereby balancing the distribution of ions formed inside the chamber 10 ( Figure 6 B).

[0218] In addition, the porous baffle 340 may include a porous structure 345 to adjust the output intensity of ions. Therefore, ions may be output to the inside of the chamber 10 through the porous baffle 340, and the output intensity of ions may be adjusted by the porous structure 345 included in the porous baffle 340.

[0219] Specifically, the pore shapes of the porous structure 345 included in the porous baffle 340 include circular, elliptical, polygonal and honeycomb structures. Fig. 9 As an example, the porous structure 345 having a honeycomb structure is shown, but it is not limited thereto and can be implemented in various shapes such as circular, elliptical, polygonal, etc. In addition, when the porous structure 345 has a honeycomb structure, it exists in the densest form, thereby improving the durability of the porous baffle 340.

[0220] The porous baffle 340 may further include a baffle combination portion that can combine a plurality of porous baffles 340. By combining the baffle combination portion with the plurality of porous baffles 340, the output intensity of the output ions can be reduced. Therefore, if the static electricity formed on the object 1 is small, or if there is a concern that the ions may damage the object 1, the output intensity of the ions can be reduced by applying a plurality of porous baffles 340 through the baffle combination portion.

[0221] In addition, the output intensity of the output ions can also be reduced when using the thick porous baffle 340. Therefore, if the static electricity formed on the object 1 is small, or if there is a concern that the ions may damage the object 1, the output intensity of the ions can be reduced by using the thick porous baffle 340.

[0222] The porous structure 345 included in the porous baffle 340 can have a porosity of 10% to 90%, preferably 10% to 70%, and more preferably 30% to 70%. The output intensity of ions passing through the porous baffle 340 can be effectively controlled by achieving the porosity within the above range.

[0223] An insulating portion may be provided at a position where the porous baffle plate 340 is connected to the opening portion. Thus, the porous baffle plate 340 can be electrically stable and effectively generate ions in the chamber 10 to eliminate static electricity.

[0224] The porous baffle 340 controls at least one of the intensity and direction of the output ions by adjusting at least one of the distribution of the pores, the size of the pores, the spacing between the pores, and the shape of the pores.

[0225] The distribution, size, spacing and shape of the gaps formed in the porous baffle 340 are uniform. In this case, the ions passing through the porous baffle 340 can move uniformly, which can be used when the object 1 and the ion source 210 are in the same straight line or static electricity is uniformly generated on the object 1.

[0226] At least one of the distribution, size, spacing and shape of the gaps formed in the porous baffle 340 may be different. In this case, the ions passing through the porous baffle 340 may move unevenly, which may be used when the object 1 and the ion source 210 are not in the same straight line, or when static electricity is unevenly generated on the object 1.

[0227] For example, see Fig. 9 The porous structure 345 is densely arranged in the right direction of the porous baffle 340 , so that even if the ion source 210 is arranged at one side edge of the chamber 10 , it can be adjusted to uniformly generate ions on the entire object 1 .

[0228] Fig.10 FIG. 2 is a second exemplary diagram of an ion source having a porous baffle according to an embodiment of the present invention. Fig.11 FIG. 2 is a second exemplary diagram of an ion source having a plurality of porous baffles according to an embodiment of the present invention. Fig.12 FIG. 2 is a second exemplary diagram of an ion source having a thick porous baffle according to an embodiment of the present invention. Fig.13 Schematic diagram for adjusting the angle of the porous baffle.

[0229] See also Figures 10 to 13The output portion 212 may include an anode electrode 310, a cathode electrode 320, an output box 330 and a porous baffle 340, wherein the porous baffle 340 may be arranged along the ion output direction on one side of the cathode electrode 320 to adjust the output intensity and output direction of the ions output to the object 1.

[0230] Ions are generated by electrons accelerated by the magnetic field generated between the electrodes. If the intensity of the output ions is strong, the ion particles and ion light generated during the ion generation process may damage the substrate of the object 1. Therefore, in order to prevent the ions from damaging the substrate, the present invention prevents the output intensity and output direction of the ions irradiated to the substrate from being adjusted by installing a porous baffle 340.

[0231] In addition, the cathode electrode 320 may include a central cathode electrode 322, an edge cathode electrode 324, and a cathode electrode connecting portion 326. The central cathode electrode 322 may be located at the center of the opening surface of the output box 330. When viewed from the side of the observation port 30, the central cathode electrode 322 may be located at the center of the opening portion of the observation port 30. The edge cathode electrode 324 may be located at the edge of the opening surface of the output box 330. The edge cathode electrode 324 may be formed along the edge of the opening surface of the output box 330. If the opening surface is circular, the edge cathode electrode 324 may also be circular (hollow donut shape).

[0232] The porous baffle 340 may be formed in a circular, rectangular, conical, or polygonal shape with at least one baffle groove 344. As an example, the porous baffle 340 is circular or rounded polygonal, and the baffle grooves 344 are formed on one side and the other side. In addition, as another example, the porous baffle 340 is circular or rounded polygonal, and the baffle grooves 344 are recessed in all directions except one side.

[0233] The ions may be output in the direction of the baffle grooves 344 formed in the porous baffle 340. As an example, when the porous baffle 340 is formed in a circular or rounded polygonal shape and the baffle grooves 344 are formed on one side and the other side, a large amount of ions may be output in the direction of the one side and the other side having the baffle grooves 344, and a small amount of ions may be output in the direction without the baffle grooves 344. As another example, when the porous baffle 340 is formed in a circular or rounded polygonal shape and the baffle grooves 344 are recessed in all directions except one side, a large amount of ions may be output in the direction having the baffle grooves 344, and a small amount of ions may be output in the direction of the one side without the baffle grooves 344.

[0234] In addition, the porous baffle 340 may include a porous structure 345 to adjust the output intensity of ions. Therefore, ions may be output to the inside of the chamber 10 through the porous baffle 340, and the output intensity of ions may be adjusted by the porous structure 345 included in the porous baffle 340.

[0235] Specifically, the porous structure 345 included in the porous baffle 340 has a pore shape including a circular, elliptical, polygonal and honeycomb structure. In addition, when the porous structure 345 has a honeycomb structure, the porous baffle 340 has the most densely packed pores, thereby improving the durability of the porous baffle 340.

[0236] The porous baffle 340 may further include a baffle combination part 346 to which a plurality of porous baffles 340 may be combined. By combining the baffle combination part 346 with the plurality of porous baffles 340, the output intensity of the output ions may be reduced. Therefore, if the static electricity formed on the object 1 is small, or if there is a concern that the ions may damage the object 1, the output intensity of the ions may be reduced by applying the plurality of porous baffles 340 through the baffle combination part 346.

[0237] In addition, the output intensity of the output ions can also be reduced when using the thick porous baffle 340. Therefore, if the static electricity formed on the object 1 is small, or if there is a concern that the ions may damage the object 1, the output intensity of the ions can be reduced by using the thick porous baffle 340.

[0238] The porous structure 345 included in the porous baffle 340 can have a porosity of 10% to 90%, preferably 10% to 70%, and more preferably 30% to 70%. The output intensity of ions passing through the porous baffle 340 can be effectively controlled by achieving the porosity within the above range.

[0239] The baffle 340 may be combined with the ion source 210 via the baffle connecting portion 341. The baffle connecting portion 341 may include a baffle connecting length adjusting portion for adjusting the length in a sliding manner. When the length is shortened by the baffle connecting length adjusting portion, the porous baffle 340 is closely attached to the opening to form a whole, and when the length is adjusted by the baffle connecting length adjusting portion, the porous baffle 340 may be spaced apart from the ion source 210.

[0240] Fig.14 FIG. 4 is a schematic diagram of a baffle connecting portion for connecting a porous baffle to an ion source according to an embodiment.

[0241] See also Fig.14 The porous baffle 340 may be connected via a baffle connecting portion 341 to be separated from the central cathode electrode 322. The baffle connecting portion 341 may be any shape that allows the porous baffle 340 to be separated and fixed from the central cathode electrode 322.

[0242] The baffle connecting portion 341 may further include a tilting unit 343 for adjusting the angle of the porous baffle 340 to control the output direction of the ions. As described above, the ion source 210 may be coupled to a port other than a port for a specific process. Specifically, the ion source 210 may be coupled to the service port 20 or the observation port 30. In addition, the service port 20 and the observation port 30 may be located at different heights relative to the object 1. Therefore, it is necessary to adjust the output direction of the ions output from the ion source 210.

[0243] In the present invention, the tilting unit 343 is disposed on the baffle connecting portion 341 so as to freely control the angle of the porous baffle 340 connected to the baffle connecting portion 341 .

[0244] The tilting unit 343 may include a hinge housing 343 a , a rotary hinge 343 b , and a fixing unit 343 c .

[0245] The hinge housing 343a may be formed integrally on the central cathode electrode 322, or may be formed as a separate component and combined by welding or screwing. The hinge housing 343a may be of any shape that allows the porous baffle 340 to be separated and fixed to the central cathode electrode 322.

[0246] The rotating hinge 343b may be formed as a pin member to penetrate and connect one or both sides of the porous baffle 340 and one or both sides of the hinge housing 343a. The rotating hinge 343b is fixed to the hinge housing 343a while allowing the porous baffle 340 to freely adjust its angle.

[0247] After the fixing unit 343c adjusts the angle of the porous baffle 340 through the rotating hinge 343b, the rotating hinge 343b is fixed to fix the angle. That is, the porous baffle 340 can determine the angle through the rotating hinge 343b, and the determined angle is fixed by the fixing unit 343c. Thus, the output direction can be adjusted so that the ions can effectively reach the object 1.

[0248] Fig.15 FIG. 4 is a diagram illustrating an example of a shape of a porous baffle according to an embodiment.

[0249] The porous baffle 340 may be formed in a circular, rectangular, conical, or polygonal shape with at least one baffle groove 344. As an example, the porous baffle 340 is circular or rounded polygonal, and the baffle grooves 344 are formed on one side and the other side. In addition, as another example, the porous baffle 340 is circular or rounded polygonal, and the baffle grooves 344 are recessed in all directions except one side.

[0250] The ions may be output in the direction of the baffle grooves 344 formed in the porous baffle 340. As an example, when the porous baffle 340 is formed in a circular or rounded polygonal shape and the baffle grooves 344 are formed on one side and the other side, a large amount of ions may be output in the direction of the one side and the other side having the baffle grooves 344, and a small amount of ions may be output in the direction without the baffle grooves 344. As another example, when the porous baffle 340 is formed in a circular or rounded polygonal shape and the baffle grooves 344 are recessed in all directions except one side, a large amount of ions may be output in the direction having the baffle grooves 344, and a small amount of ions may be output in the direction of the one side without the baffle grooves 344.

[0251] In addition, the porous baffle 340 may include a porous structure 345 to adjust the output intensity of ions. Therefore, ions may be output to the inside of the chamber 10 through the porous baffle 340, and the output intensity of ions may be adjusted by the porous structure 345 included in the porous baffle 340.

[0252] Specifically, the porous structure 345 included in the porous baffle 340 has a pore shape including a circular, elliptical, polygonal and honeycomb structure. In addition, when the porous structure 345 has a honeycomb structure, the porous baffle 340 has the most densely packed pores, thereby improving the durability of the porous baffle 340.

[0253] The porous baffle 340 may further include a baffle combination part 346 to which a plurality of porous baffles 340 may be combined. By combining the baffle combination part 346 with the plurality of porous baffles 340, the output intensity of the output ions may be reduced. Therefore, if the static electricity formed on the object 1 is small, or if there is a concern that the ions may damage the object 1, the output intensity of the ions may be reduced by applying the plurality of porous baffles 340 through the baffle combination part 346.

[0254] In addition, the output intensity of the output ions can also be reduced when using the thick porous baffle 340. Therefore, if the static electricity formed on the object 1 is small, or if there is a concern that the ions may damage the object 1, the output intensity of the ions can be reduced by using the thick porous baffle 340.

[0255] The porous structure 345 included in the porous baffle 340 can have a porosity of 10% to 90%, preferably 10% to 70%, and more preferably 30% to 70%. The output intensity of ions passing through the porous baffle 340 can be effectively controlled by achieving the porosity within the above range.

[0256] The baffle 340 may be combined with the ion source 210 via the baffle connecting portion 341. The baffle connecting portion 341 may include a baffle connecting length adjusting portion for adjusting the length in a sliding manner. When the length is shortened by the baffle connecting length adjusting portion, the porous baffle 340 is closely attached to the opening to form a whole, and when the length is adjusted by the baffle connecting length adjusting portion, the porous baffle 340 may be spaced apart from the ion source 210.

[0257] Fig.16 is a schematic diagram of the flow of ions according to the porous baffle, and Fig.17 This is a schematic diagram of changing the flow of ions through the output adjustment unit.

[0258] See also Fig.16 and Fig.17 , it can be seen that the flow of ions output from the output portion 212 is changed by the output adjustment portion 344 .

[0259] Specifically, the output adjustment unit 344 may include at least one of an insulating device and a variable resistor device. That is, the output adjustment unit 344 changes the electrical atmosphere of the space where the ions output from the output unit 212 move through at least one of the insulating device and the variable resistor device, and adjusts at least one of the output range and output intensity of the ions.

[0260] The insulating device of the output regulating portion 344 can increase the output range and output intensity of ions output from the output portion 212 by cutting off the current flowing through the baffle connecting portion 341 and its peripheral devices and preventing electromagnetic interference.

[0261] In addition, the variable resistor device of the output adjustment unit 344 can adjust the output range and output intensity of ions by controlling the resistance value.

[0262] Specifically, when the resistance value is increased by the variable resistor device, the current of the baffle connection part 341 and its peripheral devices can be suppressed, thereby increasing the output range and output intensity of ions output from the output 212.

[0263] On the contrary, when the resistance value is reduced by the variable resistor device, the current of the baffle connecting portion 341 and its peripheral devices becomes smoother, thereby reducing the output range and output intensity of ions output from the output 212.

[0264] In addition, the output regulating part 344 may be connected to a separate control part to automatically change the flow of ions according to the environment inside the chamber 10 through the separate control part.

[0265] Therefore, the output adjustment part 344 can adjust the output range and output intensity of ions output from the output part 212 to flexibly adjust the atmosphere inside the chamber 10 according to the environment inside the chamber 10 and the process performed on the object 1.

[0266] In the content, the terms "including", "consisting of" or "having" recorded, unless there is an expected record to the contrary, indicate that the corresponding constituent elements may be included, and other components are not excluded but may also be included. Unless otherwise specified, the meaning of all terms including technical or scientific terms is the same as that generally understood by technicians in the technical field to which the utility model belongs. Generally used terms such as terms defined in dictionaries have the same meaning as in the context of the relevant technology, and do not have ideal or excessive meanings in this application unless clearly defined.

[0267] The embodiments are intended to illustrate the present invention but are not intended to limit the present invention. It should be understood by those skilled in the art that the present invention may be modified, deformed or replaced by equivalents without departing from the spirit and scope of the present invention, which should all be included in the scope of the claims of the present invention.

Claims

1. An ion source comprising a porous baffle, comprising: a source body located at one side of the output portion and supplying a voltage for generating ions to an anode electrode of the output portion; and The output part uses the voltage to generate ions between the anode electrode and the cathode electrode and outputs them to the inner space of the chamber in a vacuum state. A porous baffle is arranged along the direction of the ion output. 2 . The ion source including a porous baffle according to claim 1 , wherein the output portion further comprises an opening portion opened toward one side of the chamber, and the anode electrode is exposed along the chamber direction through the opening portion. 3 . The ion source comprising a porous baffle according to claim 1 , wherein the porous baffle further comprises a baffle combining portion capable of combining a plurality of porous baffles. 4 . The ion source comprising a porous baffle according to claim 1 , wherein the porosity of the porous baffle is 10% to 90%. 5 . The ion source including a porous baffle according to claim 1 , wherein the porous baffle is integrated with an opening portion opened toward one side of the chamber. 6 . The ion source including the porous shielding plate according to claim 5 , wherein an insulating portion is provided at a position where the porous shielding plate is joined to the opening portion.

7. An ion source comprising a porous baffle according to claim 5, wherein the porous baffle controls at least one of the intensity and direction of the output ions by adjusting at least one of the distribution of pores, the size of the pores, the spacing between the pores and the shape of the pores.

8. The ion source according to claim 1, wherein the porous baffle is connected by a baffle connecting portion, wherein: The baffle connecting portion includes a baffle connecting length adjusting portion for adjusting the length in a sliding manner.

9. The ion source comprising a porous baffle according to claim 1, further comprising an output adjustment portion for adjusting at least one of an output range and an intensity of ions.

10. The ion source comprising a porous baffle according to claim 9, wherein the output adjustment section comprises at least one of an insulating device and a variable resistance device.

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