Power amplifier capable of adaptively optimizing dynamic performance

Abstract

The invention relates to the field of radio frequency integrated circuits, in particular to a power amplifier capable of adaptively optimizing dynamic performance, which comprises an input matching circuit with an output end connected to a base electrode of a radio frequency amplification transistor HBT0 and an active biasing circuit. The base electrode of the radio frequency amplification transistor HBT0 is connected to the input matching circuit and the active bias circuit, the emitter electrode of the radio frequency amplification transistor HBT0 is connected to one end of the ballast resistor R0, the collector electrode of the radio frequency amplification transistor HBT0 is connected to the power supply Vcc and the output matching circuit, and the other end of the ballast resistor R0 is grounded; one end of the output matching circuit is connected to a radio frequency output port and used for providing proper load impedance for the power amplifier tube, and the other port of the output matching circuit is connected to a collector of the radio frequency amplifier transistor HBT0; the active bias circuit is connected to the base electrode of the radio frequency amplification transistor HBT0 and provides bias current for the radio frequency amplification transistor HBT0, dynamic gain control over the power amplifier is achieved, and therefore the dynamic linearity of the circuit is improved.

Description

Technical Field

[0001] The present invention relates to the field of radio frequency integrated circuits, and in particular to a power amplifier capable of adaptively optimizing dynamic performance. Background Art

[0002] With the rapid development of science and technology and the popularization of smart homes and the Internet of Things, wireless communication technology is ushering in an unprecedented development opportunity, and so is Wi-Fi technology. From the initial 10Mb / s to the current peak rate of up to 46Gb / s, Wi-Fi is rapidly adapting to and meeting the urgent needs of modern society for high-speed wireless communications. High data transmission brings higher technical requirements to the RF front end. As the power amplifier of the final stage of RF front-end signal transmission, high linearity, high power and high bandwidth are its important index parameters. High linearity power amplifiers can increase signal transmission speed, enhance transmission distance, and expand the number of user connections. Because traditional power amplifier circuits are difficult to meet the performance index requirements of Wi-Fi6 and future Wi-Fi7 in dynamic characteristics, the power amplifier circuit will experience dynamic signal distortion during the working stage, which reduces the linearity of the power amplifier. Therefore, a power amplifier that can adaptively optimize dynamic performance is needed to solve the above problems. Summary of the invention

[0003] The technical problem to be solved by the present invention is to provide a power amplifier capable of adaptively optimizing dynamic performance, so as to solve the problem that the power amplifier circuit has dynamic distortion of signals during operation and reduces the linearity of the power amplifier.

[0004] The present invention is achieved in this way. A power amplifier capable of adaptively optimizing dynamic performance comprises an input matching circuit, a radio frequency amplifying transistor HBT0, a ballast resistor R0, an output matching circuit and an active bias circuit capable of adaptively optimizing dynamic performance; the output end of the input matching circuit is connected to the base of the radio frequency amplifying transistor HBT0 and the active bias circuit.

[0005] The base of the RF amplifier transistor HBT0 is connected to the input matching circuit and the active bias circuit, the emitter of the RF amplifier transistor HBT0 is connected to one end of the ballast resistor R0, the collector of the RF amplifier transistor HBT0 is connected to the power supply Vcc and the output matching circuit, and the other end of the ballast resistor R0 is grounded; one end of the output matching circuit is connected to the RF output port for providing a suitable load impedance to the power amplifier tube, and the other port is connected to the collector of the RF amplifier transistor HBT0; the active bias circuit is connected to the base of the RF amplifier transistor HBT0 to provide a bias current for the RF amplifier transistor HBT0.

[0006] Furthermore, the input matching circuit includes an inductor L0 and a capacitor C0, one end of the inductor L0 is connected to the RF input port and connected to one end of the capacitor C0, the other end of the inductor L0 is grounded, and the other end of the capacitor C0 serves as the output end of the input matching circuit; the input matching circuit is used to provide a suitable source impedance for the power amplifier tube.

[0007] Furthermore, the active bias circuit includes transistors HBT1~HBT6, resistors R1~R7, and filter capacitor C1. The base of transistor HBT1 is connected to the base of transistor HBT3, the base of transistor HBT6, capacitor C1 and one end of resistor R4 respectively, the other end of capacitor C1 is grounded, the emitter of transistor HBT1 is connected to one end of resistor R1, the other end of resistor R1 is connected to the base of RF amplifying transistor HBT0, the collector of transistor HBT1 is connected to the collector of transistor HBT6 and power supply Vcc; the base of transistor HBT2 is connected to one end of resistor R2 and one end of resistor R3, the collector of transistor HBT2 is connected to the base of transistor HBT3 respectively. The emitter, the collector of transistor HBT4 and one end of resistor R5 are connected; the emitter of transistor HBT2 is grounded and connected to the other end of resistor R3; the base of transistor HBT3 is respectively connected to the base of transistor HBT1, the collector of transistor HBT3, the base of transistor HBT6 and one end of resistor R4, and the emitter of transistor HBT3 is respectively connected to the collector of transistor HBT2, the collector of transistor HBT4 and one end of resistor R5; the other end of resistor R5 is connected to the other end of resistor R4 and then connected to the power supply Ven.

[0008] The base of transistor HBT4 is connected to one end of resistor R6, and the collector of transistor HBT4 is respectively connected to the collector of transistor HBT2, the emitter of transistor HBT3 and resistor R5; the base of transistor HBT5 is respectively connected to the collector of transistor HBT5, resistor R6 and one end of resistor R7, and the emitter of transistor HBT5 is grounded; the other end of resistor R7 is connected to power supply Ven. The other end of resistor R6 is connected to the base of transistor HBT4, and the emitter of transistor HBT4 is grounded.

[0009] The base of transistor HBT6 is connected to the base of transistor HBT1, the base of transistor HBT3, capacitor C1 and one end of resistor R4 respectively, the emitter of transistor HBT6 is connected to resistor R2, and the collector of transistor HBT6 is connected to the base of transistor HBT1 and power supply Vcc.

[0010] Furthermore, the output matching circuit includes: a capacitor C2 and an inductor L2, one end of the capacitor C2 is connected to the collector of the RF amplifying transistor HBT0, the other end of the capacitor C2 is connected to the inductor L2 and the output port, and the other end of the inductor L2 is grounded.

[0011] Compared with the prior art, the present invention has the following beneficial effects: 1. The active bias circuit that can adaptively optimize dynamic performance adopted by the present invention can adaptively provide RF compensation current for the RF power amplifier in the signal amplification stage, thereby improving the AM-AM (amplitude distortion) and AM-PM (phase distortion) performance of the power amplifier circuit; due to the effect of capacitor C1, the impedance of the active bias circuit is reduced, so that the RF signal coupled to the active bias circuit is increased, and the DC average current generated by the rectification of the HBT1 base-emitter junction diode enhances the bias current of the transistor HBT0; the ballast resistor R0 and the resistor R1 can effectively solve the self-heating effect of the transistor HBT and stabilize the working state of the circuit.

[0012] 2. The active bias circuit that can adaptively optimize dynamic performance adopted in the present invention can stabilize the static current of the RF power amplifier under different temperature conditions due to the temperature compensation effect of the transistor HBT2, thereby improving the temperature characteristics of the RF amplifier.

[0013] 3. The active bias circuit used in the present invention can adaptively optimize dynamic performance. The dynamic current compensation circuit composed of transistor HBT4, transistor HBT5, resistor R6 and resistor R7 can dynamically adjust the base current flowing to transistor HBT1 when the circuit is turned on, thereby realizing dynamic gain control of the power amplifier, thereby improving the dynamic linearity of the circuit. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] Figure 1 A circuit diagram of a power amplifier capable of adaptively optimizing dynamic performance provided by an embodiment of the present invention. DETAILED DESCRIPTION

[0015] In order to make the purpose, technical solution and advantages of the present invention more clearly understood, the present invention is further described in detail below in conjunction with the embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not used to limit the present invention.

[0016] See also Figure 1 As shown, an embodiment of the present invention provides a power amplifier capable of adaptively optimizing dynamic performance, including an input matching circuit, a radio frequency amplifying transistor HBT0, a ballast resistor R0, an output matching circuit, and an active bias circuit capable of adaptively optimizing dynamic performance.

[0017] The input matching circuit includes an inductor L0 and a capacitor C0, one end of the inductor L0 is connected to the RF input port and is also connected to one end of the capacitor C0, the other end of the inductor L0 is grounded, and the other end of the capacitor C0 serves as the output end of the input matching circuit; the input matching circuit is used to provide a suitable source impedance to the power amplifier tube, and the output end is connected to the base of the RF amplifier transistor HBT0 and the active bias circuit.

[0018] The base of the RF amplifying transistor HBT0 is connected to the input matching circuit and the active bias circuit, the emitter of the RF amplifying transistor HBT0 is connected to one end of the ballast resistor R0, the collector of the RF amplifying transistor HBT0 is connected to the power supply Vcc and the output matching circuit, and the other end of the ballast resistor R0 is grounded.

[0019] One end of the output matching circuit is connected to the RF output port to provide a suitable load impedance for the power amplifier tube, and the other end is connected to the collector of the RF amplifier transistor HBT0.

[0020] The output matching circuit includes: a capacitor C2 and an inductor L2, one end of the capacitor C2 is connected to the collector of the RF amplifying transistor HBT0, the other end of the capacitor C2 is connected to the inductor L2 and the output port, and the other end of the inductor L2 is grounded.

[0021] The active bias circuit is connected to the base of the radio frequency amplifying transistor HBT0 to provide a bias current for the radio frequency amplifying transistor HBT0.

[0022] The active bias circuit includes transistors HBT1~HBT6, resistors R1~R7, and filter capacitor C1. The base of transistor HBT1 is connected to the base of transistor HBT3, the base of transistor HBT6, capacitor C1 and one end of resistor R4 respectively, the other end of capacitor C1 is grounded, the emitter of transistor HBT1 is connected to one end of resistor R1, the other end of resistor R1 is connected to the base of RF amplifier transistor HBT0, the collector of transistor HBT1 is connected to the collector of transistor HBT6 and power supply Vcc; the base of transistor HBT2 is connected to one end of resistor R2 and one end of resistor R3, the collector of transistor HBT2 is connected to the base of transistor HBT3 respectively. The emitter, the collector of transistor HBT4 and one end of resistor R5 are connected; the emitter of transistor HBT2 is grounded and connected to the other end of resistor R3; the base of transistor HBT3 is respectively connected to the base of transistor HBT1, the collector of transistor HBT3, the base of transistor HBT6 and one end of resistor R4, and the emitter of transistor HBT3 is respectively connected to the collector of transistor HBT2, the collector of transistor HBT4 and one end of resistor R5; the other end of resistor R5 is connected to the other end of resistor R4 and then connected to the power supply Ven.

[0023] The base of transistor HBT4 is connected to one end of resistor R6, and the collector of transistor HBT4 is respectively connected to the collector of transistor HBT2, the emitter of transistor HBT3 and resistor R5; the base of transistor HBT5 is respectively connected to the collector of transistor HBT5, resistor R6 and one end of resistor R7, and the emitter of transistor HBT5 is grounded; the other end of resistor R7 is connected to power supply Ven. The other end of resistor R6 is connected to the base of transistor HBT4, and the emitter of transistor HBT4 is grounded.

[0024] The base of transistor HBT6 is connected to the base of transistor HBT1, the base of transistor HBT3, capacitor C1 and one end of resistor R4 respectively, the emitter of transistor HBT6 is connected to resistor R2, and the collector of transistor HBT6 is connected to the base of transistor HBT1 and power supply Vcc.

[0025] Combine the following Figure 1 The specific working principle and process of the present invention are introduced: the RF signal flows into the base of the RF amplifier transistor HBT0 after passing through the input matching circuit. After being amplified by the RF amplifier transistor HBT0, the RF signal flows into the output matching circuit and finally flows out from the output port.

[0026] During the signal amplification process, when the input signal gradually increases, the RF amplifier transistor HBT0 needs additional base compensation current to achieve amplification compensation due to the increase in working current. Under the action of capacitor C1 in the active bias circuit with adaptive response speed, the impedance of the active bias circuit is reduced, so that the RF signal coupled to the active bias circuit is increased. After rectification by the base-emitter diode of transistor HBT1, the generated DC average current enhances the bias current of the RF amplifier transistor HBT0; during the signal amplification process, the V be0 The voltage drops because the DC current rectified by transistor HBT1 causes the base-emitter voltage V BE1 decreases, thereby reducing the base-emitter voltage V be0 is compensated so that V be0 Keeping it constant and maintaining the transconductance unchanged suppresses gain compression and phase distortion and effectively improves the linearity of the circuit; the ballast resistor R0 and resistor R1 can effectively solve the self-heating effect of the transistor HBT and stabilize the working state of the circuit.

[0027] An active bias circuit that can adaptively optimize dynamic performance, when in a high temperature environment, the current of the RF amplifier transistor HBT0 increases. Since the current of the transistor HBT2 increases at high temperature, the base voltage of the transistor HBT1 decreases, thereby reducing the bias current provided by the transistor HBT1, so that the current of the circuit is stable at high temperature; similarly, in a low temperature environment, due to the negative feedback effect of the transistor HBT2, the bias current provided by the transistor HBT1 is increased, which also allows the power amplifier to work stably at low temperatures.

[0028] The active bias circuit that can adaptively optimize dynamic performance is a current compensation circuit composed of transistor HBT4, transistor HBT5, resistor R6 and resistor R7. When the circuit is in the on state, since transistor HBT5 is located near transistor HBT0, its working state follows the change of RF method transistor HBT0. Since the V be5 The voltage drops, and under the action of resistor R6, the base voltage of transistor HBT4 drops accordingly. As the current flowing through the collector of transistor HBT4 decreases, the collector current of transistor HBT2 increases, thereby V be2 decreases because the base voltage of transistor HBT1 is equivalent to V be2 , the voltage drop of resistor R2 and Vbe6, so in the bias circuit start-up phase, the base voltage of transistor HBT1 decreases, and under the action of resistor R4, the current flowing through the base of transistor HBT1 increases, thereby compensating for the dynamic current in the start-up phase. During the amplifier start-up process, the dynamic current compensation circuit composed of transistor HBT4, transistor HBT5, resistor R6 and resistor R7 provides compensation current for the power amplifier, which can optimize the dynamic characteristics of the power amplifier during the switch switching process.

[0029] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention should be included in the protection scope of the present invention.

Claims

1. A power amplifier capable of adaptively optimizing dynamic performance, characterized in that: The power amplifier includes an input matching circuit, a radio frequency amplification transistor HBT0, a ballast resistor R0, an output matching circuit, and an active bias circuit capable of adaptively optimizing dynamic performance; The output end of the input matching circuit is connected to the base of the radio frequency amplifying transistor HBT0 and the active bias circuit; The base of the RF amplifying transistor HBT0 is connected to the input matching circuit and the active bias circuit, the emitter of the RF amplifying transistor HBT0 is connected to one end of the ballast resistor R0, the collector of the RF amplifying transistor HBT0 is connected to the power supply Vcc and the output matching circuit, and the other end of the ballast resistor R0 is grounded; One end of the output matching circuit is connected to the RF output port to provide a suitable load impedance to the power amplifier tube, and the other end is connected to the collector of the RF amplifier transistor HBT0; The active bias circuit is connected to the base of the radio frequency amplifying transistor HBT0 to provide a bias current for the radio frequency amplifying transistor HBT0.

2. The power amplifier capable of adaptively optimizing dynamic performance according to claim 1, characterized in that: The input matching circuit includes an inductor L0 and a capacitor C0, one end of the inductor L0 is connected to the RF input port and is also connected to one end of the capacitor C0, the other end of the inductor L0 is grounded, and the other end of the capacitor C0 serves as the output end of the input matching circuit; the input matching circuit is used to provide a suitable source impedance for the power amplifier tube.

3. The power amplifier capable of adaptively optimizing dynamic performance according to claim 1, characterized in that: The active bias circuit includes transistors HBT1~HBT6, resistors R1~R7, and filter capacitor C1. The base of transistor HBT1 is connected to the base of transistor HBT3, the base of transistor HBT6, capacitor C1 and one end of resistor R4 respectively, the other end of capacitor C1 is grounded, the emitter of transistor HBT1 is connected to one end of resistor R1, the other end of resistor R1 is connected to the base of RF amplifying transistor HBT0, the collector of transistor HBT1 is connected to the collector of transistor HBT6 and power supply Vcc; the base of transistor HBT2 is connected to one end of resistor R2 and one end of resistor R3, the collector of transistor HBT2 is connected to the base of transistor HBT3 respectively. The emitter of transistor HBT2 is connected to the ground and the other end of the resistor R3; the base of transistor HBT3 is respectively connected to the base of transistor HBT1, the collector of transistor HBT3, the base of transistor HBT6 and one end of the resistor R4, and the emitter of transistor HBT3 is respectively connected to the collector of transistor HBT2, the collector of transistor HBT4 and one end of the resistor R5; the other end of the resistor R5 is connected to the other end of the resistor R4 and then connected to the power supply Ven; The base of the transistor HBT4 is connected to one end of the resistor R6, and the collector of the transistor HBT4 is connected to the collector of the transistor HBT2, the emitter of the transistor HBT3 and the resistor R5 respectively; The base of transistor HBT5 is connected to the collector of transistor HBT5, resistor R6 and one end of resistor R7 respectively, and the emitter of transistor HBT5 is grounded; the other end of resistor R7 is connected to the power supply Ven. The other end of resistor R6 is connected to the base of transistor HBT4, and the emitter of transistor HBT4 is grounded; The base of transistor HBT6 is connected to the base of transistor HBT1, the base of transistor HBT3, capacitor C1 and one end of resistor R4 respectively, the emitter of transistor HBT6 is connected to resistor R2, and the collector of transistor HBT6 is connected to the base of transistor HBT1 and power supply Vcc.

4. The power amplifier capable of adaptively optimizing dynamic performance according to claim 1, characterized in that: The output matching circuit includes: a capacitor C2 and an inductor L2, one end of the capacitor C2 is connected to the collector of the radio frequency amplifying transistor HBT0, the other end of the capacitor C2 is connected to the inductor L2 and the output port, and the other end of the inductor L2 is grounded.

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