Flat panel detector and preparation method thereof
The preparation of flat-plate detectors by multi-stage module splicing method solves the problems of insufficient detection width and low wafer utilization in the prior art, and achieves the effect of improving wafer utilization and reducing production costs.
Patent Information
- Application Number
- CN202411949215.8
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-27
- Publication Date
- 2025-05-16
AI Technical Summary
When existing TDI detectors detect large objects or amplified detectors, the detector detection width is insufficient, resulting in the need to splice modules to increase the detection range. However, the larger the grain size in the large module, the higher the probability of defects, resulting in a reduced wafer utilization and an increase in production costs.
The flat plate detector is prepared by multi-stage module splicing. First, the grains are bonded to form a first module on the first substrate, and then the plurality of first modules are bonded in parallel to form a second module, and finally the plurality of second modules are bonded in parallel to form a flat plate detector.
When preparing the first module, smaller grains can be selected to reduce the probability of defects and increase the number of grains for wafer cutting, thereby increasing wafer utilization and reducing production costs. At the same time, through the splicing of the modules that passed the test, the defective products will be removed in time to improve the product yield.
Smart Images
Figure CN120018601A_ABST
Abstract
Description
Technical Field
[0001] The present invention belongs to the field of image sensors, and in particular, relates to a flat panel detector and a preparation method thereof. Background Art
[0002] X-ray digital imaging is a conventional nondestructive testing technology for detecting workpiece quality. In the actual application of TDI (Time Delay Integration, TDI) detectors, the detection width of the detector is insufficient due to the large size of the detected object or the need to enlarge the detected object by a certain proportion. Therefore, it is necessary to increase the detection range of the detector by splicing.
[0003] However, the larger the size of the module used for splicing, the larger the size of the grain required in the module, and the greater the probability of grain defects, which leads to a decrease in the utilization rate of the entire wafer, and then increases the production cost. Therefore, it is necessary to improve the preparation process of the flat panel detector to improve the wafer utilization rate and reduce the production cost. Summary of the invention
[0004] In view of the shortcomings of the prior art described above, the present invention provides a flat-panel detector and a method for preparing the same. First, the crystal grains are bonded to a first substrate to form a first module, and then a plurality of first modules are bonded in parallel to a second substrate to form a second module. Finally, a plurality of second modules are bonded in parallel to a third substrate to form a flat-panel detector. The present invention forms a flat-panel detector by splicing multiple modules. When preparing the first module, smaller crystal grains can be selected. The smaller the crystal grain size, the smaller the probability of defects. The more crystal grains are formed by wafer cutting, which is beneficial to improving wafer utilization and reducing production costs. In addition, the first module that has passed the test is selected to splice to form the second module, and then the second module that has passed the test is selected to splice to form a flat-panel detector, which is beneficial to timely removal of defective products and improves product yield.
[0005] To achieve the above-mentioned object and other related objects, the present invention provides a method for preparing a flat panel detector, comprising the following steps:
[0006] Bonding the die to the first substrate to form a first module;
[0007] Bonding a plurality of the first modules in parallel on a second substrate along a first direction to form a second module;
[0008] A plurality of the second modules are bonded in parallel on the third substrate along the first direction to form a flat panel detector.
[0009] Optionally, forming the first module further includes: bonding a circuit board to the first substrate, and connecting the circuit board to the die via leads, wherein the circuit board and the die are arranged at intervals in a second direction, and the second direction is perpendicular to the first direction.
[0010] Optionally, forming the first module further includes: filling protective glue between the die and the circuit board, wherein the protective glue covers the leads.
[0011] Optionally, after forming the first module, the method further includes: testing the first module, and selecting the first module that passes the test to perform subsequent steps.
[0012] Optionally, after forming the second module, the method further includes: testing the second module, and selecting the second module that passes the test to perform subsequent steps.
[0013] Optionally, for the second modules that have passed the test, optical glue is filled between adjacent first modules.
[0014] Optionally, forming the flat panel detector further includes: filling optical glue between adjacent second modules.
[0015] Optionally, along the first direction, the length of the second substrate is smaller than the length of the second module, and the difference between the two is between 0.2 mm and 0.4 mm; along the second direction, the width of the second substrate is smaller than the width of the first module, and the difference between the two is between 0.2 mm and 0.4 mm.
[0016] Optionally, along the first direction, the length of the third substrate is smaller than the length of the flat panel detector, and the difference between the two is between 0.2 mm and 0.4 mm; along the second direction, the width of the third substrate is smaller than the width of the second module, and the difference between the two is between 0.2 mm and 0.4 mm.
[0017] This embodiment further provides a flat panel detector, which is formed by any of the above-mentioned methods for preparing a flat panel detector.
[0018] The flat panel detector and the method for preparing the same provided by the present invention have at least the following beneficial effects:
[0019] The present invention forms a flat-panel detector by splicing multiple modules. When preparing the first module, smaller grains can be selected. The smaller the grain size, the smaller the probability of defects. The more grains are formed by wafer cutting, which is beneficial to improving wafer utilization and reducing production costs. In addition, a first module that has passed a test is selected to splice to form a second module, and then a second module that has passed a test is selected to splice to form a flat-panel detector, which is beneficial to timely removing defective products and improving product yield. BRIEF DESCRIPTION OF THE DRAWINGS
[0020] Figure 1 Shown is a flow chart of the method for preparing a flat panel detector provided in Example 1.
[0021] Figure 2 Shown is a schematic structural diagram of the first module provided in Example 1.
[0022] Figure 3 Shown is a schematic structural diagram of the second module provided in Example 1.
[0023] Figure 4 Shown is a side view of the flat panel detector provided in the first embodiment.
[0024] Figure 5 Shown is a top view of the flat panel detector provided in the first embodiment.
[0025] Component number description
[0026] 1 Grain
[0027] 2 Circuit Board
[0028] 3 Leads
[0029] 10 First Module
[0030] 20 Second Module
[0031] 30 Third Module
[0032] 100 First substrate
[0033] 200 Second substrate
[0034] 300 Third substrate DETAILED DESCRIPTION
[0035] The following describes the embodiments of the present invention through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and the details in this specification can also be modified or changed in various ways based on different viewpoints and applications without departing from the spirit of the present invention.
[0036] It should be noted that the illustrations provided in this embodiment only illustrate the basic concept of the present invention in a schematic manner. Although the illustrations only show components related to the present invention rather than being drawn according to the number, shape and size of components in actual implementation, the form, quantity, positional relationship and proportion of each component in actual implementation can be changed at will under the premise of realizing the technical solution of this party, and the component layout form may also be more complicated.
[0037] Embodiment 1
[0038] This embodiment provides a method for preparing a flat panel detector, such as Figure 1 As shown, the following steps are included:
[0039] Step S1: bonding the die to a first substrate to form a first module;
[0040] First, a wafer is provided, and the wafer is cut into a plurality of crystal grains 1. Specifically, the following steps are included: 1) preparing the wafer. The wafer needs to be cleaned and inspected before cutting to ensure that there are no impurities and defects on the surface to avoid damage during the cutting process; 2) positioning. The wafer is accurately positioned using automated equipment to ensure that the cutting line is aligned with the crystal grain pattern on the wafer; 3) cutting. A high-energy laser beam can be used to perform non-contact cutting of the wafer. This method is accurate in cutting and can reduce damage to the crystal grains; 4) separating the crystal grains. After the cutting is completed, the wafer is divided into many independent crystal grains 1.
[0041] As an example, a wafer can be cut into multiple smaller grains 1. The smaller the grain 1 is, the smaller the probability of defects will be. The more grains 1 are cut, the more wafer utilization will be improved. Specifically, the size of the grain 1 can be determined according to actual production requirements. Figure 2 As shown, the grain 1 is along the first direction ( Figure 2 The minimum length (in the X-axis direction) can be 20 mm.
[0042] like Figure 2 As shown, a bonding adhesive is coated on the surface of the first substrate 100, and the crystal grain 1 is bonded to the first substrate 100 by the bonding adhesive. As an example, the first substrate 100 can be made of metal material, ceramic material or polymer material, and there is a conductive film layer (not shown in the figure) with a pattern formed by printing, screen printing, electroforming, electroless plating or sputtering on the side facing the crystal grain 1. The conductive film layer (not shown in the figure) can be silver, nickel, copper, tin, aluminum or an alloy of the aforementioned metal materials, or a transparent conductive material such as indium tin oxide (ITO), indium zinc oxide (IZO), indium gallium oxide (IGO) and indium tungsten oxide (IWO). As an example, the bonding adhesive can be composed of a conductive filler (such as silver powder, gold powder, etc.), a binder and a solvent.
[0043] Next, the circuit board 2 is bonded to the first substrate 100, and the circuit board 2 and the die 1 are aligned in the second direction ( Figure 2The circuit board 2 is arranged at intervals (in the Y-axis direction shown), and the circuit board 2 is connected to the die 1 through the lead 3. As an example, the circuit board 2 is used to perform electrical testing on the die 1 to ensure that it functions normally. As an example, the lead 3 is a metal wire, for example, made of one of Al, Cu, Ag, and Au. The metal wire as a lead has good electrical conductivity, mechanical strength, thermal stability and cost-effectiveness, and is suitable for various electronic applications and manufacturing needs.
[0044] Next, a protective glue (not shown in the figure) is filled between the die 1 and the circuit board 2, and the protective glue (not shown in the figure) covers the lead 3, thereby forming a first module 10. As an example, the protective glue can be epoxy resin or silicone.
[0045] Finally, the first modules 10 are electrically tested, the first modules 10 that fail the test are removed, and the first modules 10 that pass the test are selected for subsequent steps. As an example, the number of first modules 10 used for subsequent steps needs to be set according to the detection width of the detector. This embodiment takes the example of splicing fourteen first modules 10 to form a flat panel detector.
[0046] Step S2: bonding a plurality of the first modules in parallel on a second substrate along a first direction to form a second module;
[0047] like Figure 3 As shown, a bonding adhesive is coated on the surface of the second substrate 200, and a plurality of first modules 10 are bonded along a first direction ( Figure 3 The first substrate 100 in the first module 10 is bonded to the second substrate 200 in parallel (in the X-axis direction shown), and the first substrate 100 in the first module 10 is bonded to the second substrate 200. As an example, the number of first modules 10 used to form the second module 20 is determined according to actual production requirements. This embodiment includes two types of second modules 20, one type of second module 20 includes four first modules 10, and the other type of second module 20 includes two first modules 10.
[0048] As an example, the second substrate 200 can be made of a metal material, a ceramic material or a polymer material, and has a conductive film layer (not shown in the figure) with a pattern formed by printing, screen printing, electroforming, electroless plating or sputtering on the side facing the first substrate 100. The conductive film layer (not shown in the figure) can be silver, nickel, copper, tin, aluminum or an alloy of the aforementioned metal materials, or a transparent conductive material such as indium tin oxide (ITO), indium zinc oxide (IZO), indium gallium oxide (IGO) and indium tungsten oxide (IWO).
[0049] As an example, along the first direction ( Figure 3The length of the second substrate 200 is less than the length of a plurality of first substrates 100 spliced together, that is, the length of the second substrate 200 is less than the length of the second module 20, so as to facilitate the Figure 3 In this embodiment, the second substrate 200 and the second module 20 are arranged along the first direction ( Figure 3 The length difference (in the X-axis direction) is between 0.2 mm and 0.4 mm, preferably 0.3 mm.
[0050] As an example, along the second direction ( Figure 3 The width of the second substrate 200 is smaller than the width of the first substrate 100, that is, the width of the second substrate 200 is smaller than the width of the first module 10, so as to facilitate the Figure 3 In this embodiment, the second substrate 200 and the first substrate 100 are aligned along the second direction ( Figure 3 The width difference in the Y-axis direction (as shown) is between 0.2 mm and 0.4 mm, preferably 0.3 mm.
[0051] Next, the second modules 20 are tested, and the second modules 20 that fail the test are removed, and the second modules 20 that pass the test are selected to proceed to subsequent steps.
[0052] Finally, for the second modules 20 that have passed the test, optical glue (not shown in the figure) is filled between the adjacent first modules 10 to fill the gap. In this embodiment, the optical glue is epoxy resin glue.
[0053] Step S3: bonding a plurality of the second modules in parallel on the third substrate along the first direction to form a flat panel detector.
[0054] like Figure 4 As shown, a bonding adhesive is coated on the surface of the third substrate 300, and a plurality of second modules 20 are bonded along a first direction ( Figure 4 The second substrate 200 in the second module 20 is bonded to the third substrate 300 in parallel in the X-axis direction shown in FIG. 1 , and the second substrate 200 in the second module 20 is bonded to the third substrate 300. As an example, the number of second modules 20 used to form a flat panel detector is determined according to actual production requirements. In this embodiment, Figure 5 As shown, three second modules 20 are selected and spliced to form a flat panel detector, wherein one second module 20 includes two first modules 10 , and the other two second modules 20 include four first modules 10 respectively.
[0055] As an example, the third substrate 300 can be made of a metal material, a ceramic material or a polymer material, and has a conductive film layer (not shown in the figure) with a pattern formed by printing, screen printing, electroforming, electroless plating or sputtering on the side facing the second substrate 200. The conductive film layer (not shown in the figure) can be silver, nickel, copper, tin, aluminum or an alloy of the aforementioned metal materials, or a transparent conductive material such as indium tin oxide (ITO), indium zinc oxide (IZO), indium gallium oxide (IGO) and indium tungsten oxide (IWO).
[0056] As an example, along the first direction ( Figure 4 The length of the third substrate 300 is smaller than the length of the plurality of second modules 20 spliced together, that is, the length of the third substrate 300 is smaller than the length of the flat panel detector spliced together, so as to facilitate the scanning along the first direction ( Figure 4 In this embodiment, the third substrate 300 and the flat panel detector formed by splicing are arranged along the first direction ( Figure 4 The length difference (in the X-axis direction) is between 0.2 mm and 0.4 mm, preferably 0.3 mm.
[0057] As an example, along the second direction ( Figure 4 The width of the third substrate 300 is smaller than the width of the second substrate 200, that is, the width of the third substrate 300 is smaller than the width of the second module 20, so as to facilitate the Figure 4 In this embodiment, the third substrate 300 and the second substrate 200 are arranged along the second direction ( Figure 4 The width difference in the Y-axis direction (as shown) is between 0.2 mm and 0.4 mm, preferably 0.3 mm.
[0058] Finally, optical glue (not shown in the figure) is filled between adjacent second modules 20 to fill the gap. In this embodiment, the optical glue is epoxy resin glue.
[0059] It should be noted that this embodiment is described by taking three times of splicing as an example. In other optional embodiments, more times of splicing can be performed to form a flat panel detector. The specific number of splicing times is determined according to actual production needs.
[0060] In the flat panel detector preparation method provided in this embodiment, firstly, the crystal grains are bonded to the first substrate to form the first module, then several first modules are bonded in parallel to the second substrate to form the second module, and finally several second modules are bonded in parallel to the third substrate to form the flat panel detector. This embodiment forms the flat panel detector by splicing multiple modules, and can select crystal grains of smaller size when preparing the first module. The smaller the crystal grain size, the smaller the probability of defects, and the more crystal grains formed by wafer cutting, which is conducive to improving wafer utilization and reducing production costs; in addition, the first module that has passed the test is selected to splice to form the second module, and then the second module that has passed the test is selected to splice to form the flat panel detector, which is conducive to timely removal of defective products and improves product yield.
[0061] Embodiment 2
[0062] This embodiment provides a flat panel detector, such as Figure 4 As shown, it includes a third substrate 300 and a plurality of second modules 20 formed on the surface of the third substrate 300. In this embodiment, the number of the second modules 20 is three.
[0063] like Figure 3 As shown, the second module 20 includes a second substrate 200 and a plurality of first modules 10 formed on the surface of the second substrate 200. Figure 5 As shown, this embodiment has two types of second modules 20 , one type of second module 20 includes four first modules 10 , and the other type of second module 20 includes two first modules 10 .
[0064] As an example, the flat panel detector provided in this embodiment is prepared by the method provided in the first embodiment. The specific structure thereof can refer to the description of the first embodiment and will not be described again here.
[0065] The above embodiments are merely illustrative of the principles and effects of the present invention, and are not intended to limit the present invention. Anyone familiar with the art may modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by a person of ordinary skill in the art without departing from the spirit and technical concept disclosed by the present invention shall still be covered by the claims of the present invention.
Claims
1. A method for preparing a flat panel detector, characterized in that: The steps include: Bonding the die to the first substrate to form a first module; Bonding a plurality of the first modules in parallel on a second substrate along a first direction to form a second module; A plurality of the second modules are bonded in parallel on the third substrate along the first direction to form a flat panel detector.
2. The method for preparing a flat panel detector according to claim 1, characterized in that: Forming the first module also includes: bonding a circuit board to the first substrate, and connecting the circuit board to the die through leads, wherein the circuit board and the die are arranged at intervals in a second direction, and the second direction is perpendicular to the first direction.
3. The method for preparing a flat panel detector according to claim 2, characterized in that: Forming the first module also includes: filling protective glue between the die and the circuit board, wherein the protective glue covers the leads.
4. The method for preparing a flat panel detector according to claim 1, characterized in that: After forming the first module, the method further includes: testing the first module, and selecting the first module that passes the test to proceed to subsequent steps.
5. The method for preparing a flat panel detector according to claim 1, characterized in that: After forming the second module, the method further includes: testing the second module, and selecting the second module that passes the test to proceed to subsequent steps.
6. The method for preparing a flat panel detector according to claim 5, characterized in that: For the second modules that have passed the test, optical glue is filled between adjacent first modules.
7. The method for preparing a flat panel detector according to claim 1, characterized in that: Forming the flat panel detector also includes: filling optical glue between adjacent second modules.
8. The method for preparing a flat panel detector according to claim 2, characterized in that: Along the first direction, the length of the second substrate is smaller than the length of the second module, and the difference between the two is between 0.2mm and 0.4mm; along the second direction, the width of the second substrate is smaller than the width of the first module, and the difference between the two is between 0.2mm and 0.4mm.
9. The method for preparing a flat panel detector according to claim 2, characterized in that: Along the first direction, the length of the third substrate is smaller than the length of the flat panel detector, and the difference between the two is between 0.2mm and 0.4mm; along the second direction, the width of the third substrate is smaller than the width of the second module, and the difference between the two is between 0.2mm and 0.4mm.
10. A flat panel detector, characterized in that: The flat panel detector is formed by the flat panel detector manufacturing method according to any one of claims 1 to 9.