Flat panel detector and medical imaging detection equipment

Abstract

The present invention relates to the field of digital medical imaging technology, and discloses a flat-panel detector and medical imaging detection equipment. The flat-panel detector includes a substrate, which is divided into a plurality of detection units. Each detection unit includes a first absorption layer and a second absorption layer disposed on the substrate and stacked. The second absorption layer is located on a side of the first absorption layer facing away from the substrate, and the radiation energy level absorbed by the second absorption layer is lower than the radiation energy level absorbed by the first absorption layer. A voltage supply electrode structure is provided, and an output circuit electrically connected to the voltage supply electrode structure and configured to output a first detection signal from the first absorption layer and a second detection signal from the second absorption layer. The flat-panel detector includes a first absorption layer and a second absorption layer capable of absorbing radiation of different energies, enabling detection of both high-energy and low-energy radiation. The detector has good compatibility and can perform dual-energy silhouette detection in the same dual-energy radiation exposure, making it easy to use.

Description

Technical Field

[0001] The present invention relates to the technical field of digital medical imaging, and in particular to a flat panel detector and medical imaging detection equipment. Background Art

[0002] Semiconductor flat-panel detectors are currently widely used as light detection sensing components in the field of digital medical imaging. Currently, flat-panel detectors are mainly divided into two categories: one is indirect detectors, which generally adopt amorphous silicon TFT backplane technology combined with amorphous silicon PIN diode technology (or single-crystal silicon CMOS combined with c-Si PPD diode technology); the second is direct detectors. The absorption layer thickness of direct detectors made of X-ray sensitive materials on the market is fixed. Therefore, for higher-energy radiation imaging applications (such as chest radiography, orthopedic radiography, dental radiography, etc., which use ≥70kVp radiation), they are compatible with low-energy detection. However, for low-energy applications (such as breast and soft tissue radiography using ≤40kVp radiation), detectors are not compatible with high-energy radiation detection. In addition, since the detector does not distinguish between photon energies in the process of detecting signals, dual-energy silhouette detection with a single exposure of the radiation source cannot be achieved. Therefore, there is an urgent need for a detector with good compatibility and convenient dual-energy silhouette detection. Summary of the Invention

[0003] The present invention discloses a flat-panel detector and medical imaging detection equipment. The flat-panel detector has a first absorption layer and a second absorption layer that can absorb rays of different energies. It can detect both high-energy rays and low-energy rays, has good compatibility, and can realize dual-energy silhouette detection in the same dual-energy ray exposure, which is easy to use.

[0004] To achieve the above object, the present invention provides the following technical solutions:

[0005] A flat panel detector includes a substrate, wherein the substrate is divided into a plurality of detection units, each of the detection units including:

[0006] a first absorption layer and a second absorption layer stacked on the base substrate, wherein the second absorption layer is located on a side of the first absorption layer facing away from the base substrate, and the radiation energy level absorbed by the second absorption layer is lower than the radiation energy level absorbed by the first absorption layer;

[0007] a voltage supply electrode structure for providing an operating voltage to the first absorption layer and the second absorption layer;

[0008] An output circuit is electrically connected to the voltage supply electrode structure and is used to output a first detection signal of the first absorption layer and a second detection signal of the second absorption layer.

[0009] In the above-mentioned flat panel detector, it should be noted that the high-energy rays below refer to rays with relatively high energy levels, specifically X-rays with higher energy, and the low-energy rays refer to rays with relatively low energy levels, specifically X-rays with lower energy. The energy level of high-energy rays is greater than that of low-energy rays. The flat-panel detector includes a substrate, on which a plurality of detection units are divided, each detection unit is provided with a first absorption layer and a second absorption layer arranged on the substrate and stacked, the energy level of the radiation that can be absorbed by the second absorption layer is lower than the energy level of the radiation that can be absorbed by the first absorption layer, that is, the wavelength of the radiation absorbed by the second absorption layer is longer than the wavelength of the radiation absorbed by the first absorption layer, and the second absorption layer is located on the side of the first absorption layer away from the substrate; the voltage supply electrode structure can provide an interlayer working voltage to the first absorption layer, so that the electrons generated after the first absorption layer absorbs the radiation energy move in a direction, so as to form a first detection signal, the voltage supply electrode structure can provide an interlayer working voltage to the second absorption layer, so that the second absorption layer provides an interlayer working voltage, so that the electrons generated after the second absorption layer absorbs the radiation energy move in a direction, so as to form a second detection signal, the output circuit is electrically connected to the voltage supply electrode structure, and can output the first detection signal of the first absorption layer and the second detection signal of the second absorption layer; for the above-mentioned flat-panel detector, it has two absorption layers, which can absorb radiation of two different energies, that is, it can detect radiation of two different energies. When low-energy detection is performed, that is, when relatively low-energy radiation (for example, 25kvp X-rays commonly used for breast or soft tissue examinations) is used for exposure and detection, a corresponding working voltage is applied to the second absorption layer, and a second detection signal can be output, which is then processed to form a detection image; when high-energy detection is performed, that is, when relatively high-energy radiation (for example, 80kvp X-rays commonly used for chest X-rays) is used, a corresponding working voltage is applied to the first absorption layer, and a first detection signal can be output, which is then processed to form a detection image; when dual-energy silhouette detection is performed, a dual-energy radiation source can be used for exposure. During the exposure process, the working voltages of the first absorption layer and the second absorption layer can be controlled to output the first detection signal and the second detection signal respectively. The first detection signal and the second detection signal are processed by an algorithm to form a silhouette image signal, which can be used to form a silhouette image; therefore, the flat-panel detector in this embodiment has high compatibility and can realize dual-energy silhouette detection in a single dual-energy radiation exposure process, which is convenient to use.

[0010] Therefore, the above-mentioned flat-panel detector has a first absorption layer and a second absorption layer that can absorb rays of different energies, which can realize the detection of high-energy rays as well as low-energy rays. It has good compatibility and can realize dual-energy silhouette detection in the same dual-energy ray exposure, which is easy to use.

[0011] Optionally, the output circuit includes a TFT provided on the substrate;

[0012] An interlayer insulating layer and a planarizing layer are sequentially provided on a side of the TFT facing away from the base substrate;

[0013] The voltage supply electrode structure includes a bottom electrode, a first voltage supply top electrode, and a second voltage supply top electrode, which are located on the flat layer and away from the interlayer insulating layer and are stacked in sequence; wherein, the first absorption layer is located between the bottom electrode and the first voltage supply top electrode, and the second absorption layer is located between the first voltage supply top electrode and the second voltage supply top electrode; the bottom electrode is electrically connected to the source electrode of the TFT.

[0014] Optionally, the output circuit includes a first TFT and a second TFT provided on the base substrate and arranged in the same layer;

[0015] An interlayer insulating layer and a first planarizing layer are sequentially provided on the side of the first TFT and the second TFT facing away from the base substrate;

[0016] The voltage supply electrode structure includes a first bottom electrode, a first top electrode, a second bottom electrode and a second top electrode, which are located on the side of the first flat layer away from the interlayer insulating layer and are stacked in sequence; a second flat layer is provided between the first top electrode and the second bottom electrode, the first absorption layer is located between the first bottom electrode and the first top electrode, and the second absorption layer is located between the second bottom electrode and the second top electrode; the first bottom electrode is electrically connected to the source electrode of the first TFT, and the second bottom electrode is electrically connected to the source electrode of the second TFT.

[0017] Optionally, the voltage supply electrode structure also includes: a first connecting electrode arranged in the same layer as the first bottom electrode and a second connecting electrode arranged in the same layer as the first top electrode, and a third flat layer arranged in the same layer as the first absorption layer is arranged between the first connecting electrode and the second connecting electrode; wherein, the first connecting electrode is electrically connected to the source electrode of the second TFT through a first via hole, the second connecting electrode is electrically connected to the first connecting electrode through a second via hole, and the second bottom electrode is electrically connected to the second connecting electrode through a third via hole.

[0018] Optionally, the material of the first absorption layer is different from the material of the second absorption layer.

[0019] Optionally, the material of the first absorption layer and the material of the second absorption layer are the same, and the thickness of the first absorption layer is greater than the thickness of the second absorption layer.

[0020] Optionally, the material of the first absorption layer includes amorphous selenium, mercury iodide, cadmium zinc telluride, lead iodide or perovskite;

[0021] The material of the second absorption layer includes amorphous selenium, mercury iodide, cadmium zinc telluride, lead iodide or perovskite.

[0022] Optionally, the material of the voltage supply electrode structure includes metal or ITO.

[0023] Optionally, when the material of the voltage supply electrode structure is metal, the voltage supply electrode structure includes a single metal layer of Mo, Ti, Al or Nd, or the voltage supply electrode structure includes a stacked metal layer of Mo / AlNd / Mo, Ti / Al / Ti or MTD / Cu / MTD.

[0024] The present invention further provides a medical image detection device, comprising any one of the flat panel detectors provided by the above technical solution and a display device connected to the flat panel detector signal. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] Figure 1 A partial cross-sectional schematic diagram of a flat panel detector provided by an embodiment of the present invention;

[0026] Figure 2 for Figure 1 Schematic diagram of equivalent circuit in a detection unit of the flat panel detector;

[0027] Figure 3 A partial cross-sectional schematic diagram of a flat panel detector provided by an embodiment of the present invention;

[0028] Figure 4 for Figure 3 Schematic diagram of equivalent circuit in a detection unit of the flat panel detector;

[0029] Icon: 1-substrate; 2-first absorption layer; 3-second absorption layer; 4-TFT; 5-flat layer; 6-bottom electrode; 7-first voltage-supply top electrode; 8-second voltage-supply top electrode; 9-first TFT; 10-second TFT; 11-first flat layer; 12-first bottom electrode; 13-second top electrode; 14-second flat layer; 15-second bottom electrode; 16-second top electrode; 17-first connecting electrode; 18-second connecting electrode; 19-third flat layer. DETAILED DESCRIPTION

[0030] The following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of the present invention.

[0031] like Figures 1 to 4 As shown, an embodiment of the present invention provides a flat-panel detector, including a base substrate 1, which is divided into a plurality of detection units, each detection unit including: a first absorption layer 2 and a second absorption layer 3 arranged on the base substrate 1 and stacked, the second absorption layer being located on the side of the first absorption layer away from the base substrate, the radiation energy level absorbed by the second absorption layer being lower than the radiation energy level absorbed by the first absorption layer; a voltage supply electrode structure for providing an operating voltage to the first absorption layer and the second absorption layer; and an output circuit electrically connected to the voltage supply electrode structure and for outputting a first detection signal of the first absorption layer and a second detection signal of the second absorption layer.

[0032] In the above-mentioned flat panel detector, it should be noted that the high-energy rays below refer to rays with relatively high energy levels, specifically X-rays with higher energy, and the low-energy rays refer to rays with relatively low energy levels, specifically X-rays with lower energy. The energy level of high-energy rays is greater than that of low-energy rays. The flat-panel detector includes a substrate, on which a plurality of detection units are divided, each detection unit is provided with a first absorption layer and a second absorption layer which are arranged on the substrate and are stacked, the energy level of the radiation which can be absorbed by the second absorption layer is lower than the energy level of the radiation which can be absorbed by the first absorption layer, that is, the wavelength of the radiation absorbed by the second absorption layer is longer than the wavelength of the radiation absorbed by the first absorption layer, and the second absorption layer is located on the side of the first absorption layer away from the substrate; the voltage supply electrode structure can provide an interlayer working voltage to the first absorption layer, so that the electrons generated after the first absorption layer absorbs the radiation energy move in a direction so as to form a first detection signal, wherein the detection signal generated by the first absorption layer absorbing the radiation is called a first detection signal, the voltage supply electrode structure can provide an interlayer working voltage to the second absorption layer, so that the electrons generated after the second absorption layer absorbs the radiation energy move in a direction so as to form a second detection signal, wherein the detection signal generated by the first absorption layer absorbing the radiation is called a first detection signal, and the output circuit is electrically connected to the voltage supply electrode structure, and can output the first detection signal of the first absorption layer and output the second detection signal of the second absorption layer. The flat-panel detector has two absorption layers that can absorb two different energy rays, that is, can detect two different energy rays. When performing low-energy detection, that is, using relatively low-energy rays (for example, 25 kVp X-rays commonly used for breast or soft tissue examinations) for exposure and detection, a corresponding operating voltage is applied to the second absorption layer to output a second detection signal, which is then processed to form a detection image. When performing high-energy detection, that is, using relatively high-energy rays (for example, 80 kVp X-rays commonly used for chest X-rays), a corresponding operating voltage is applied to the first absorption layer to output a first detection signal, which is then processed to form a detection image. When performing dual-energy silhouette detection, a dual-energy radiation source can be used for exposure. It should be noted that the dual-energy radiation source can simultaneously emit two rays of different energies, or it can simultaneously emit rays within a wavelength band, that is, it can emit rays of multiple energies. This embodiment does not limit the types of rays emitted by the dual-energy radiation source.During the exposure process, the first detection signal and the second detection signal can be output by controlling the respective operating voltages of the first absorption layer and the second absorption layer. A silhouette image signal can be formed after algorithm processing is performed based on the first detection signal and the second detection signal, which can be used to form a silhouette image. Therefore, the flat-panel detector in this embodiment has high compatibility and can realize dual-energy silhouette detection in a single dual-energy ray exposure process, which is easy to use.

[0033] Therefore, the above-mentioned flat-panel detector has a first absorption layer and a second absorption layer that can absorb rays of different energies, which can realize the detection of high-energy rays as well as low-energy rays. It has good compatibility and can realize dual-energy silhouette detection in the same dual-energy ray exposure, which is easy to use.

[0034] Specifically, there are many options for arranging the output circuit and the voltage supply electrode structure, such as:

[0035] Method 1:

[0036] like Figure 1 and Figure 2 As shown, Figure 2 In the figure, the D end represents the drain electrode connection end of the TFT. In each detection unit, the output circuit includes a TFT4 arranged on the substrate; an interlayer insulating layer and a flat layer 5 are sequentially arranged on the side of the TFT4 away from the substrate, the interlayer insulating layer is arranged on the TFT4 to cover the TFT4, and the flat layer is arranged on the interlayer insulating layer to play a flat role; the voltage supply electrode structure includes a bottom electrode 6, a first voltage supply top electrode 7 and a second voltage supply top electrode 8, which are located on the side of the flat layer away from the interlayer insulating layer and are stacked in sequence; wherein the first absorption layer 2 is located between the bottom electrode 6 and the first voltage supply top electrode 7, and the second absorption layer 3 is located between the first voltage supply top electrode 7 and the second voltage supply top electrode 8; the bottom electrode 6 is electrically connected to the source electrode of the TFT. Each detection unit includes a TFT arranged on a substrate, an interlayer insulating layer and a flat layer arranged above the TFT, a bottom electrode arranged on the flat layer, the bottom electrode can be electrically connected to the source electrode of the TFT through a via hole penetrating the interlayer insulating layer and the flat layer, a first absorption layer is arranged above the bottom electrode, a first voltage supply top electrode is arranged above the first absorption layer, the first voltage supply top electrode can be electrically connected to the voltage supply circuit in the flat panel detector, the voltage supply circuit can provide a voltage signal to the first voltage supply top electrode to provide an operating voltage to the first absorption layer, a second absorption layer is arranged above the first voltage supply top electrode, a second voltage supply top electrode is arranged above the second absorption layer, the second voltage supply top electrode can be electrically connected to the voltage supply circuit in the flat panel detector, the voltage supply circuit can provide a voltage signal to the second voltage supply top electrode to provide an operating voltage to the second absorption layer, wherein, in method one, the first absorption layer and the second absorption layer are connected in series, and in method one, as Figure 1 and Figure 2 As shown, the flat panel detector is tested for high energy carbon layer, low energy detection or dual energy silhouette detection as follows:

[0037] During low-energy detection, low-energy rays are used for exposure. The voltage supply circuit may provide a voltage signal V1 to the first voltage supply top electrode and a voltage signal V2 to the second voltage supply top electrode, respectively, to ensure that the first absorption layer operates at its corresponding operating voltage and can be turned on, and to ensure that the second absorption layer operates at its corresponding operating voltage. At this time, the second absorption layer can generate a second detection signal, and the first absorption layer can generate a first detection signal. The TFT is turned on and the superimposed signal of the first absorption layer and the second absorption layer is read at its gate GT. The superimposed signal is processed to form a low-energy detection signal. It should be noted that a small amount of low-energy rays will also pass through the second absorption layer and be absorbed by the first absorption layer. The first absorption layer will also generate a small amount of electrons. The first absorption layer will also generate a detection signal. The detection signal forms a compensation detection signal to form a superimposed signal with the second detection signal generated by the second absorption layer. The superimposed signal is processed to form a low-energy detection signal.

[0038] During high-energy detection, high-energy rays are used for exposure, so that the voltage supply circuit provides a voltage signal V1 to the first voltage supply top electrode and a voltage signal V2 to the second voltage supply top electrode, respectively, to ensure that the first electrode layer operates at its corresponding operating voltage to generate a first detection signal, and to ensure that the second absorption layer operates at its corresponding operating voltage to generate a second detection signal, and then the TFT is turned on to read the superimposed signal of the first absorption layer and the second absorption layer at its gate GT, and the superimposed signal is processed to form a high-energy detection signal; alternatively, only the first absorption layer may work, that is, the first voltage supply top electrode is disconnected and no voltage signal is applied, a voltage signal V1 is applied to the first voltage supply top electrode, and only the first absorption layer works, and the TFT is turned on to read the first detection signal at its gate GT, and the first detection signal forms a high-energy detection signal. It should be noted that since the second absorption layer absorbs very little high-energy rays, the generated compensation detection signal is relatively small, and the impact on the first detection signal is relatively small. Therefore, during high-energy detection, the first absorption layer and the second absorption layer can be controlled to work simultaneously to obtain a high-energy detection signal, or only the first absorption layer can be controlled to work to obtain a high-energy detection signal. This can be selected according to the actual detection situation, and this embodiment is not limited.

[0039] During dual-energy silhouette detection, a dual-energy ray source is used for exposure. During the exposure process, a voltage signal V1 is first provided to the first voltage supply top electrode, and the second voltage supply top electrode is disconnected, and no voltage signal is applied, so that the first absorption layer works, and the second absorption layer absorbs low-energy rays, but does not generate an electrical signal. The TFT is turned on and the first detection signal is read at its gate GT to form a first dual-energy detection signal. Then, a voltage signal V1 is provided to the first voltage supply top electrode, and a voltage signal V2 is provided to the second voltage supply top electrode, so that the first absorption layer and the second absorption layer work simultaneously, the first absorption layer generates a first detection signal, and the second absorption layer generates a second detection signal. The TFT is turned on and the superimposed signal of the first absorption layer and the second absorption layer is read at its gate GT. The superimposed signal The signal is processed to form a second dual-energy detection signal; or, voltage signals are first applied to the first supply voltage top electrode and the second supply voltage top electrode at the same time, so that the first absorption layer and the second absorption layer are both working, the first absorption layer generates a first detection signal, the second absorption layer generates a second detection signal, the TFT is turned on and the superimposed signal of the first absorption layer and the second absorption layer is read at its gate GT, the superimposed signal is processed to form a second dual-energy detection signal, and then the voltage signal input of the second supply voltage top electrode is disconnected, only the first absorption layer is working, the TFT is turned on and the first detection signal is read at the gate GT to form a first dual-energy detection signal; wherein, the first dual-energy detection signal and the second dual-energy detection signal can be formed into a silhouette signal after calculation and processing, which is input into the corresponding display device to form a silhouette image.

[0040] The above is the setting of the output circuit and the voltage supply electrode structure in which the first absorption layer and the second absorption layer are arranged in series, as well as the control under different test conditions. The output circuit and the voltage supply electrode structure are simple in structure and convenient in control. They can realize dual-energy detection of the flat-panel detector, have good compatibility, and have high detection signal accuracy.

[0041] Method 2:

[0042] like Figure 3 and Figure 4 As shown, Figure 4The D terminal in the figure represents the connection terminal between the drain electrode of the first TFT and the drain electrode of the second TFT. The output circuit includes a first TFT9 and a second TFT10 disposed on the same layer on a substrate 1. An interlayer insulating layer and a first planarizing layer 11 are stacked on the sides of the first TFT9 and the second TFT10 facing away from the substrate. The interlayer insulating layer is disposed on and covers the first TFT9 and the second TFT10. The first planarizing layer is disposed on the interlayer insulating layer to provide planarization. The voltage supply electrode structure includes a first bottom electrode 12, a first top electrode 13, a second bottom electrode 15, and a second top electrode 16 stacked on the side of the first planarizing layer 11 facing away from the interlayer insulating layer. A second planarizing layer 14 is disposed between the first top electrode 13 and the second bottom electrode 15. A first absorption layer 2 is disposed between the first bottom electrode 12 and the first top electrode 13, and a second absorption layer 3 is disposed between the second bottom electrode 15 and the second top electrode 16. The first bottom electrode 12 is electrically connected to the source electrode of the first TFT9, and the second bottom electrode 15 is electrically connected to the source electrode of the second TFT10. In each detection unit, each output circuit includes two TFTs, a first TFT and a second TFT. An interlayer insulating layer and a first flat layer are provided above the first TFT and the second TFT. A first bottom electrode is provided on the first flat layer. The first bottom electrode is electrically connected to the source electrode of the first TFT via a via hole penetrating the first flat layer and the interlayer insulating layer. A first absorption layer is provided on the first bottom electrode. A first top electrode is provided on the first absorption layer. The first top electrode is electrically connected to a voltage supply circuit in the flat panel detector. The voltage supply circuit can provide a voltage signal to the first top electrode, so that the first absorption layer operates at its corresponding operating voltage to generate A first detection signal is generated, a second flat layer is provided on the first top electrode, a second bottom electrode is provided on the second flat layer, the second bottom electrode is electrically connected to the source electrode of the second TFT, and the second bottom electrode is insulated from the first bottom electrode and the first top electrode, a second absorption layer is provided on the second bottom electrode, a second top electrode is provided on the second absorption layer, the second top electrode is electrically connected to a voltage supply circuit in the flat panel detector, the voltage supply circuit can provide a voltage signal to the second top electrode, so that the second absorption layer operates at its corresponding operating voltage to generate a second detection signal, wherein, in the second method, the first absorption layer and the second absorption layer are connected in parallel, in the second method, as Figure 3 and Figure 4 As shown, the flat panel detector is tested for high energy carbon layer, low energy detection or dual energy silhouette detection as follows:

[0043] During low-energy detection, low-energy rays are used for exposure, and a voltage signal V2 can be provided to the second top electrode, without applying a voltage signal to the first top electrode, so that only the second absorption layer is operated, and the second TFT is turned on to read the second detection signal at its gate GT2 to form a low-energy detection signal; or, while providing a voltage signal V2 to the second top electrode, a voltage signal V1 is also provided to the first top electrode, so that both the first absorption layer and the second absorption layer are operated, the first absorption layer generates a first detection signal, and the second absorption layer generates a second detection signal, the first TFT is turned on to read the first detection signal at its gate GT1, and the second TFT is turned on to read the second detection signal at its gate GT2, the first detection signal serves as a compensation signal, and forms a superimposed signal with the second detection signal, and the superimposed signal is processed to form a low-energy detection signal.

[0044] During high-energy detection, high-energy rays are used for exposure. A voltage signal V1 can be provided to the first top electrode, and no voltage signal is applied to the second top electrode. Only the first absorption layer is operated, and the first TFT is turned on to read the first detection signal at its gate GT1 to form a high-energy detection signal. Alternatively, while providing a voltage signal V1 to the first top electrode, a voltage signal V2 is also provided to the second top electrode, so that both the first absorption layer and the second absorption layer are operated, the first absorption layer generates a first detection signal, and the second absorption layer generates a second detection signal. The first TFT is turned on to read the first detection signal at its gate GT1, and the second TFT is turned on to read the second detection signal at its gate GT2. The second detection signal serves as a compensation signal and forms a superimposed signal with the first detection signal. The superimposed signal is processed to form a high-energy detection signal.

[0045] During dual-energy silhouette detection, a voltage signal V1 can be first provided to the first top electrode, and no voltage signal is applied to the second top electrode. Only the first absorption layer is operated, and the first TFT is turned on to read the first detection signal at its gate GT1 to form a first dual-energy detection signal. Then, the voltage signal input of the first top electrode is disconnected, and no voltage signal is applied to the first top electrode. A voltage signal V2 is applied to the second top electrode, and only the second absorption layer is operated. The second TFT is turned on to read the second detection signal at its gate GT2 to form a second dual-energy detection signal. Alternatively, the voltage signal input of the first top electrode is first disconnected, and no voltage signal is applied to the first top electrode. A voltage signal V2 is applied to the second top electrode. Only the second absorption layer is operated. The second TFT is turned on to read the second detection signal at its gate GT2 to form a second dual-energy detection signal. Signal V2, only the second absorption layer is operated, the second TFT is turned on and the second detection signal is read at its gate GT2 to form a first dual-energy detection signal, and then a voltage signal V1 is provided to the first top electrode, and no voltage signal is applied to the second top electrode, only the first absorption layer is operated, the first TFT is turned on and the first detection signal is read at its gate GT1 to form a first dual-energy detection signal, and the order in which the first absorption layer and the second absorption layer work separately can be specifically set according to actual conditions, and this embodiment does not limit it; wherein, the obtained first dual-energy detection signal and the second dual-energy detection signal can be formed into a silhouette signal after calculation and processing, and input into the corresponding display device to form a silhouette image.

[0046] The above is the setting of the output circuit and the voltage supply electrode structure in which the first absorption layer and the second absorption layer are set in parallel, as well as the control under different test conditions. The output circuit and the voltage supply electrode structure are simple in structure and convenient in control. They can realize dual-energy detection of the flat-panel detector, have good compatibility, and have high detection signal accuracy.

[0047] In the above method 2, if Figure 3 As shown, the voltage supply electrode structure also includes: a first connecting electrode 17 arranged in the same layer as the first bottom electrode 12 and a second connecting electrode 18 arranged in the same layer as the first top electrode 13, the first connecting electrode 17 and the first bottom electrode 12 are insulated, the second connecting electrode 18 and the first top electrode 13 are insulated, and a third flat layer 19 arranged in the same layer as the first absorption layer 2 is provided between the first connecting electrode 17 and the second connecting electrode 18; wherein, the first connecting electrode 17 is electrically connected to the source electrode of the second TFT3 through a first via hole, the second connecting electrode 18 is electrically connected to the first connecting electrode 17 through a second via hole, the second bottom electrode is electrically connected to the second connecting electrode through a third via hole, and the second bottom electrode is electrically connected to the source electrode of the second TFT through the first connecting electrode and the second connecting electrode, so the connection is stable and the reliability is strong.

[0048] Specifically, in the above-mentioned flat-panel detector, the material settings of the first absorption layer and the second absorption layer can be: the material of the first absorption layer is different from the material of the second absorption layer. Since the absorption layers of different materials have different absorption capabilities for rays, the material of the first absorption layer and the material of the second absorption layer are set to be different. While ensuring that the energy level of the rays absorbed by the first absorption layer is greater than the energy level of the rays absorbed by the second absorption layer, the thickness of the first absorption layer and the second absorption layer can be set as thin as possible within the test conditions, which is conducive to reducing the overall thickness of the flat-panel detector and achieving a lightweight design.

[0049] Alternatively, the material of the first absorption layer and the material of the second absorption layer are the same, and the thickness of the first absorption layer is set to be greater than the thickness of the second absorption layer.

[0050] Specifically, in the above-mentioned flat panel detector, the material of the first absorption layer can be a photoconductor material such as amorphous selenium, mercury iodide, cadmium zinc telluride, lead iodide or perovskite; the material of the second absorption layer can be a photoconductor material such as amorphous selenium, mercury iodide, cadmium zinc telluride, lead iodide or perovskite.

[0051] Specifically, in the flat-panel detector, the material of the voltage supply electrode structure includes metal or ITO. When the voltage supply electrode structure is metal, the voltage supply electrode structure may be a single metal layer of Mo, Ti, Al, or Nd, or a stacked metal layer of Mo / AlNd / Mo, Ti / Al / Ti, or MTD / Cu / MTD. The configuration of the voltage supply electrode structure may be selected based on actual conditions and is not limited in this embodiment.

[0052] An embodiment of the present invention further provides an image detection device, comprising any one of the double-layer flat panel detectors provided by the above technical solution and a display device connected to the double-layer flat panel detector signal.

[0053] Obviously, those skilled in the art may make various changes and modifications to the embodiments of the present invention without departing from the spirit and scope of the present invention. Thus, if such modifications and variations of the present invention fall within the scope of the claims and their equivalents, the present invention is intended to include such modifications and variations.

Claims

1. A flat panel detector, characterized in that: The invention comprises a substrate, wherein the substrate is divided into a plurality of detection units, each of the detection units comprising: a first absorbing layer and a second absorbing layer stacked on the base substrate, wherein the second absorbing layer is located on a side of the first absorbing layer facing away from the base substrate, and the second absorbing layer absorbs an X-ray energy level lower than the X-ray energy level absorbed by the first absorbing layer; a voltage supply electrode structure for providing an operating voltage to the first absorption layer and the second absorption layer; an output circuit electrically connected to the voltage supply electrode structure and configured to output a first detection signal of the first absorption layer and a second detection signal of the second absorption layer; The output circuit includes a first TFT and a second TFT provided on the base substrate and arranged in the same layer; An interlayer insulating layer and a first planarizing layer are sequentially provided on the side of the first TFT and the second TFT facing away from the base substrate; The voltage supply electrode structure includes a first bottom electrode, a first top electrode, a second bottom electrode, and a second top electrode, which are stacked in sequence and located on a side of the first flat layer facing away from the interlayer insulating layer; a second flat layer is provided between the first top electrode and the second bottom electrode; the first absorption layer is located between the first bottom electrode and the first top electrode; and the second absorption layer is located between the second bottom electrode and the second top electrode; the first bottom electrode is electrically connected to the source electrode of the first TFT, and the second bottom electrode is electrically connected to the source electrode of the second TFT; The voltage supply electrode structure also includes: a first connecting electrode arranged in the same layer as the first bottom electrode and a second connecting electrode arranged in the same layer as the first top electrode, and a third flat layer arranged in the same layer as the first absorption layer is arranged between the first connecting electrode and the second connecting electrode; wherein, the first connecting electrode is electrically connected to the source electrode of the second TFT through a first via hole, the second connecting electrode is electrically connected to the first connecting electrode through a second via hole, and the second bottom electrode is electrically connected to the second connecting electrode through a third via hole.

2. The flat panel detector according to claim 1, wherein: The material of the first absorption layer is different from the material of the second absorption layer.

3. The flat panel detector according to claim 1, wherein: The material of the first absorption layer and the material of the second absorption layer are the same, and the layer thickness of the first absorption layer is greater than the layer thickness of the second absorption layer.

4. The flat panel detector according to claim 2 or 3, characterized in that: The material of the first absorption layer includes amorphous selenium, mercury iodide, cadmium zinc telluride, lead iodide or perovskite; The material of the second absorption layer includes amorphous selenium, mercury iodide, cadmium zinc telluride, lead iodide or perovskite.

5. The flat panel detector according to claim 1, wherein: The material of the voltage supply electrode structure includes metal or ITO.

6. The flat panel detector according to claim 5, characterized in that: When the material of the voltage supply electrode structure is metal, the voltage supply electrode structure includes a single metal layer of Mo, Ti, Al or Nd, or the voltage supply electrode structure includes a stacked metal layer of Mo / AlNd / Mo, Ti / Al / Ti or MTD / Cu / MTD.

7. A medical imaging detection device, characterized in that: The device comprises the flat panel detector according to any one of claims 1 to 6 and a display device connected to the flat panel detector signal.

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