Display device and light-emitting panel thereof

Abstract

The invention relates to the technical field of display, in particular to a display device and a light-emitting panel thereof. The light-emitting panel comprises a driving substrate, an auxiliary mark layer and an electronic element layer, wherein the driving substrate is at least provided with a plurality of first bonding pads; the auxiliary mark layer is arranged on the driving substrate, the auxiliary mark layer exposes the first bonding pad and is provided with first mark structures and second mark structures, the second mark structures surround at least part of the peripheral side of the first bonding pad, and the first mark structures are arranged on the two sides of the second mark structures; the brightness of the second marking structure is greater than that of the first marking structure; the electronic element layer is at least provided with a plurality of light-emitting elements, and at least part of the first bonding pads are connected with the light-emitting elements; the panel can improve the image recognition success rate of the die bonder.

Description

Technical Field

[0001] The present disclosure relates to the field of display technology, and in particular to a display device and a light-emitting panel thereof. Background Art

[0002] The die bonding process uses a robotic arm to absorb the die ring, uses a visual recognition system to confirm the pad position, and places the LED (light-emitting diode) on the pad. Before die bonding, solder paste needs to be printed on the pad position. The solder paste and surrounding circuits will interfere with image recognition, reduce the success rate of image recognition, and cause the die bonding position to shift, resulting in a poor die bonding process.

[0003] It should be noted that the information disclosed in the above background technology section is only used to enhance the understanding of the background of the present disclosure, and therefore may include information that does not constitute the prior art known to ordinary technicians in the field. Summary of the invention

[0004] The purpose of the present disclosure is to overcome the deficiencies of the above-mentioned prior art and to provide a display device and a light-emitting panel thereof, which can improve the image recognition success rate of a die bonder.

[0005] According to one aspect of the present disclosure, there is provided a light emitting panel having:

[0006] A driving substrate, wherein the driving substrate has at least a plurality of first pads;

[0007] an auxiliary marking layer, the auxiliary marking layer being disposed on the driving substrate and exposing the first pad, the auxiliary marking layer having a first marking structure and a second marking structure, at least a portion of the first pad being surrounded by the second marking structure, both sides of the second marking structure having the first marking structure, and a brightness of the second marking structure being greater than a brightness of the first marking structure;

[0008] The electronic component layer comprises at least a plurality of light emitting components, and at least part of the first pads are connected to the light emitting components.

[0009] In one embodiment of the present disclosure, the first marking structure has a plurality of second structures; the second structures correspond to the first pads one by one; and the second structures are located between the second marking structures and the first pads.

[0010] In one embodiment of the present disclosure, the first marking structure further includes a first structure; a plurality of the second structures correspond one-to-one to a plurality of the first pads;

[0011] The second marking structure is a grid-like structure, and one second structure is arranged in any grid; the first structure surrounds all the second marking structures.

[0012] In one embodiment of the present disclosure, the width of the second marking structure is not less than 4 μm; and the widths of the first marking structures located on both sides of the second marking structure are not less than 4 μm.

[0013] In an embodiment of the present disclosure, widths of the first mark structures located on both sides of the second mark structure are equal.

[0014] In an embodiment of the present disclosure, a surface of the first mark structure away from the driving substrate is flush with a surface of the second mark structure away from the driving substrate.

[0015] In one embodiment of the present disclosure, the first marking structure is made of light-blocking material, and the second marking structure is made of light-reflecting material.

[0016] In one embodiment of the present disclosure, the driving substrate comprises a base substrate and a driving layer;

[0017] The driving layer is arranged on one side of the substrate, and the auxiliary marking layer is arranged on a side of the driving layer away from the substrate;

[0018] The surface of the auxiliary marking layer away from the base substrate is flush with the surface of the first pad away from the base substrate; or there is a step difference between the surface of the auxiliary marking layer away from the base substrate and the surface of the first pad away from the base substrate.

[0019] In one embodiment of the present disclosure, the driving layer has a groove, the orthographic projection of the groove on the base substrate does not overlap with the orthographic projection of the first pad on the base substrate, and the auxiliary marking layer is located in the groove;

[0020] Alternatively, the light-emitting panel further has an insulating support structure; the insulating support structure is located on a side of the driving layer away from the substrate, the insulating support structure exposes each of the first pads, and the auxiliary marking layer is located on a side of the insulating support structure away from the driving layer.

[0021] According to another aspect of the present disclosure, the present disclosure provides a display device having the above-mentioned light-emitting panel.

[0022] It is to be understood that the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the present disclosure. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] The accompanying drawings herein are incorporated into the specification and constitute a part of the specification, illustrate embodiments consistent with the present disclosure, and together with the specification are used to explain the principles of the present disclosure. Obviously, the accompanying drawings described below are only some embodiments of the present disclosure, and for ordinary technicians in this field, other accompanying drawings can be obtained based on these accompanying drawings without creative work.

[0024] Figure 1 It is a schematic structural diagram of a light-emitting panel in one embodiment of the present disclosure.

[0025] Figure 2 It is a schematic structural diagram of a light-emitting panel in one embodiment of the present disclosure.

[0026] Figure 3 It is a schematic structural diagram of a light-emitting panel in one embodiment of the present disclosure.

[0027] Figure 4 It is a schematic structural diagram of a light-emitting panel in one embodiment of the present disclosure.

[0028] Figure 5 It is a schematic structural diagram of a light-emitting panel in one embodiment of the present disclosure.

[0029] Figure 6 It is a schematic structural diagram of a light-emitting panel in one embodiment of the present disclosure.

[0030] Figure 7 It is a schematic structural diagram of a light-emitting panel in one embodiment of the present disclosure.

[0031] Reference numerals:

[0032] SBT, substrate; BUF, buffer layer; TL, electronic component layer; LD, light-emitting element; WWL, metal wiring layer; WWL1, first metal wiring layer; WWL2, second metal wiring layer; FL1, first insulating layer; FL2, second insulating layer; PAD, pad; PAD1, first pad; PAD11, first sub-pad; PAD12, second sub-pad; LPNL, light-emitting panel; ET1, first electrode; ET2, second electrode; AML, auxiliary marking layer; TS1, first marking structure; TS2, second marking structure; TS11, first structure; TS12, second structure; ISS, insulating support structure; CS, connecting structure. DETAILED DESCRIPTION

[0033] Example embodiments will now be described more fully with reference to the accompanying drawings. However, the example embodiments can be implemented in a variety of forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that the present disclosure will be comprehensive and complete and fully convey the concepts of the example embodiments to those skilled in the art. The same reference numerals in the figures represent the same or similar structures, and thus their detailed description will be omitted. In addition, the drawings are only schematic illustrations of the present disclosure and are not necessarily drawn to scale.

[0034] Although relative terms such as "upper" and "lower" are used in this specification to describe the relative relationship of one component of the illustration to another component, these terms are used in this specification only for convenience, such as according to the orientation of the examples described in the drawings. It is understood that if the device of the illustration is turned upside down, the component described as "upper" will become the component "lower". When a structure is "on" other structures, it may mean that the structure is formed integrally on the other structure, or that the structure is "directly" disposed on the other structure, or that the structure is "indirectly" disposed on the other structure through another structure.

[0035] The terms "a", "an", "the", and "said" are used to indicate the presence of one element / component / etc.; the terms "including" and "having" are used to express an open-ended inclusion and mean that additional elements / components / etc. may exist in addition to the listed elements / components / etc.; the terms "first", "second", etc. are used merely as labels and are not intended to limit the quantity of their objects.

[0036] Structure A is located on a side of structure B far away from structure C. It can be understood that structure A is formed on a side of structure B far away from structure C.

[0037] In the present application, unless otherwise clearly specified and limited, the term "connection" should be understood in a broad sense. For example, "connection" can be a fixed connection, a detachable connection, or an integral connection; it can be a direct connection or an indirect connection through an intermediate medium.

[0038] The present disclosure provides a light emitting panel LPNL, wherein Figure 1 The light emitting panel LPNL includes a driving substrate and an electronic element layer TL.

[0039] In one embodiment of the present disclosure, the driving substrate has a pad PAD and a pad connecting circuit, and the electronic component layer TL has electronic components, wherein the electronic components at least include a light-emitting element LD for emitting light and a microchip (not shown in the figure) that can be used to control the light-emitting element LD. The microchip and the light-emitting element LD can be bound to the corresponding pad PAD, so that the pad connecting circuit can drive the light-emitting element LD to emit light to achieve a display function.

[0040] In one embodiment of the present disclosure, the light emitting panel LPNL may adopt PM driving (Passive Matrix, passive matrix driving, referred to as PM driving). In other embodiments, the light emitting panel LPNL adopts AM driving (Active Matrix, active matrix driving, referred to as AM driving). The present disclosure takes the light emitting panel LPNL adopting PM driving as an example for introduction.

[0041] In one example of the present disclosure, see Figure 1-Figure 4 The driving substrate disclosed in the present invention includes a base substrate SBT and a driving layer arranged on the base substrate SBT.

[0042] Among them, the substrate substrate SBT can be a substrate substrate SBT of an inorganic material, or a substrate substrate SBT of an organic material. For example, in one embodiment of the present disclosure, the material of the substrate substrate SBT can be a glass material such as soda-lime glass, quartz glass, sapphire glass, or can be a metal material such as stainless steel, aluminum, nickel, etc. In another embodiment of the present disclosure, the material of the substrate substrate SBT can be polymethylmethacrylate (PMMA), polyvinyl alcohol (PVA), polyvinylphenol (PVP), polyether sulfone (PES), polyimide, polyamide, polyacetal, polycarbonate (PC), polyethylene terephthalate (PET), polyethylene naphthalate (PEN) or a combination thereof.

[0043] Optionally, in one embodiment of the present disclosure, the base substrate SBT may be a glass substrate.

[0044] In this example, see Figure 1-Figure 4 ( Figure 1 It is only a cross-sectional view from one perspective, the connection between part of the first metal wiring layer WWL1 and the second metal wiring layer WWL2 is not shown, and the light-emitting element LD is not fully shown). The driving layer includes one or more metal wiring layers WWL; the metal wiring layer WWL can form various conductive structures required for various driving leads, connecting leads and pads PAD of the light-emitting panel LPNL.

[0045] When the light emitting panel LPNL has multiple metal wiring layers WWL, an insulating layer may be provided between two adjacent metal wiring layers WWL, and the insulating layer may include an organic insulating layer, an inorganic insulating layer, or a mixture of the two. Vias may be provided on the insulating layer so that the upper and lower metal wiring layers WWL are electrically connected. Furthermore, the light emitting panel LPNL may also be provided with an insulating protective layer, the material of the insulating protective layer may include an organic insulating material, and the opening portion of the insulating protective layer may expose the various pads PAD on the light emitting panel LPNL, while the other portions of the insulating protective layer may protect the various driving leads and the various connecting leads.

[0046] In one embodiment of the present disclosure, the pad PAD includes a first pad PAD1 and a second pad (not shown in the figure), wherein the first pad PAD1 is used to bind the light emitting element LD, and the second pad is used to bind the microchip.

[0047] In the present disclosure, when a light emitting element LD and a microchip are arranged on the light emitting panel LPNL to form the light emitting panel LPNL, the light emitting element LD can be electrically connected to the first pad PAD1 through the connection structure CS, and the microchip can be electrically connected to the second pad through the connection structure CS. The connection structure CS can be composed of materials such as solder paste or conductive glue, or the connection structure CS can be a spike-shaped concave-convex structure composed of a hard metal material. Exemplarily, the electronic components can be connected to the corresponding pads PAD through processes such as printed soldering, die bonding, and reflow soldering through the connection structure CS composed of solder paste.

[0048] In one embodiment of the present disclosure, the connecting lead, the first pad PAD1 and the second pad may be located in the same metal wiring layer WWL, while the driving lead is located in another metal wiring layer WWL. Exemplarily, the light emitting panel LPNL includes a first metal wiring layer WWL1, a first insulating layer FL1 and a second metal wiring layer WWL2 which are sequentially stacked on the substrate substrate SBT. Among them, the driving lead is located in the first metal wiring layer WWL1, and the connecting lead, the first pad PAD1 and the second pad are located in the second metal wiring layer WWL2; the second metal wiring layer WWL2 is electrically connected to the first metal wiring layer WWL1 through a via located in the first insulating layer FL1.

[0049] In another embodiment, the first pad PAD1 and the driving lead may also be located in the same metal wiring layer WWL, for example, both are located in the first metal wiring layer WWL1.

[0050] Optionally, the thickness of the first metal wiring layer WWL1 may be greater than the thickness of the second metal wiring layer WWL2 , and the signal fluctuation on the driving lead may be reduced by increasing the thickness of the driving lead.

[0051] In one example, the driving layer has a second pad for binding a microchip and a pad connection circuit electrically connected to the second pad, and the pad connection circuit has a first pad PAD1 for binding a functional device (light-emitting element LD). In this way, a microchip and a functional device can be bound to the light-emitting panel LPNL, thereby forming a functional substrate that actively drives the functional device through the microchip. The functional device can be a current-driven element, for example, the functional device includes at least a light-emitting element LD, and for another example, the functional device can also include a heating element, a sound-emitting element, etc. The functional device can also include an electronic component that realizes a sensing function, such as a photosensitive element, a thermistor, etc.

[0052] In one example, the first pad PAD1 can be used to bind the light-emitting element LD, for example, it can be used to bind a micro light-emitting diode (including Mini LED), etc., so as to form a light-emitting panel LPNL. It is understandable that the first pad PAD1 can also be used to bind other sensors, such as temperature sensors, pressure sensors, infrared sensors and other electronic components. In some embodiments, the first pad PAD1 can be used to bind micro light-emitting diodes, or all used to bind components such as sensors, or part of the first pad PAD1 can be used to bind micro light-emitting diodes, and part of it can be used to bind sensors, and even part of the first pad PAD1 can not be bound to any electronic components.

[0053] In the embodiment of the present disclosure, the first pad PAD1 is composed of a first sub-pad PAD11 and a second sub-pad PAD12; in the pad connection circuit, when the first pad PAD1 is bound and connected to the light-emitting element LD, the first sub-pad PAD11 and the second sub-pad PAD12 can be respectively bound and connected to two electrodes of the light-emitting element LD (a first electrode ET1 and a second electrode ET2, one of the first electrode ET1 and the second electrode ET2 is an anode and the other is a cathode).

[0054] The light-emitting panel LPNL provided in the present disclosure may further include a third pad PAD for binding other electronic components. The present disclosure does not limit the position, function and connection relationship of the third pad PAD, which may be set according to actual needs.

[0055] As an example, see Figure 1-Figure 4 The light emitting panel LPNL includes a substrate SBT, a buffer layer BUF, a first metal wiring layer WWL1, a first insulating layer FL1, a second metal wiring layer WWL2, and a second insulating layer FL2 which are stacked in sequence. In one example, the first insulating layer FL1 includes a first passivation layer and a planarization organic material layer, and the first passivation layer is disposed close to the first metal wiring layer WWL1. The second insulating layer FL2 includes a second passivation layer and an insulating protection layer, and the second passivation layer is disposed close to the second metal wiring layer WWL2.

[0056] The substrate SBT may be a glass substrate. The material of the buffer layer BUF may be an inorganic dielectric material, such as silicon nitride, silicon oxide or silicon oxynitride, to eliminate stress of subsequent other film layers on the glass substrate. In one embodiment of the present disclosure, the material of the buffer layer BUF may be silicon nitride.

[0057] The first passivation layer is used to protect the first metal wiring layer WWL1, and the second passivation layer is used to protect the second metal wiring layer WWL2. The materials of the first passivation layer and the second passivation layer can be inorganic dielectric materials, such as silicon nitride, silicon oxide, or silicon oxynitride. In one embodiment of the present disclosure, the materials of the first passivation layer and the second passivation layer can be silicon nitride.

[0058] The planarized organic material layer can provide a planarized surface for the second metal wiring layer WWL2 of the light emitting panel LPNL, and adjust the capacitance value between the first metal wiring layer WWL1 and the second metal wiring layer WWL2. The material of the planarized organic material layer can be an organic material, such as polyimide, epoxy resin, phenolic resin or other organic materials. In one embodiment of the present disclosure, the planarized organic material layer can be an organic material containing a photosensitizer.

[0059] The material of the insulating protective layer may include an organic insulating material, for example, it may contain a resin material. Optionally, the insulating protective layer may also contain an inorganic material, for example, it may include inorganic particles dispersed in a resin. Exemplarily, the insulating protective layer may be an organic-inorganic composite layer formed by cross-linking and curing of an acrylic monomer in which nano titanium oxide particles are dispersed. The insulating protective layer and the second passivation layer may have vias that expose each sub-pad (first sub-pad PAD11 and second sub-pad PAD12) of the first pad PAD1 and each sub-pad of the second pad, so as to bind and connect the light-emitting element LD and the microchip on the light-emitting panel LPNL (it can be understood that the area of ​​the second metal wiring layer WWL2 that serves as the binding pad PAD has no other insulating film layer covering the surface to ensure electrical connection with the external signal source circuit).

[0060] In one embodiment of the present disclosure, the first metal wiring layer WWL1 may include a metal material layer, or may include multiple stacked metal material layers, and the material of any metal material layer may be a metal element or an alloy. In one example, the thickness of the first metal wiring layer WWL1 is relatively large so that the drive line has a lower impedance. In one example, the first metal wiring layer WWL1 may have a metal material layer with high conductivity, such as a copper layer or an aluminum layer, to reduce the impedance of the drive line.

[0061] In the example disclosed in the present invention, the light-emitting panel LPNL is a Mini LED light-emitting panel LPNL or other light-emitting panel LPNL including a die bonding process.

[0062] In the related art. The die bonding process (Mini LED modules are usually composed of LED (light-emitting element LD) arrays and driving substrates, and the process of transferring LEDs to driving substrates is called die bonding) is to suck the crystal ring through a robotic arm, confirm the pad position through a visual recognition system, and place the LED on the pad. Before die bonding, the solder paste connecting the LED and the pad needs to be printed on the pad position. The solder paste and the circuits located around the solder paste (the circuits on the light-emitting substrate) will interfere with the image recognition of the visual recognition system, thereby reducing the success rate of image recognition, and will cause the die bonding position to shift (the printed solder paste and some other graphics on the surface of the light-emitting substrate, such as circuit routing, will affect the judgment of the pad by the visual recognition system of the die bonding machine, causing the die bonding to shift, especially for Mini LEDs with high PPI (Pixels Per Inch, pixel density), the LED spacing is very small. When the LED spacing is less than the mechanical accuracy of the die bonding machine, the die bonding missing rate and offset rate will be greatly increased), resulting in a poor die bonding process.

[0063] In order to solve the above problems, the present disclosure provides an auxiliary marking layer AML on the driving substrate, and the auxiliary marking layer AML exposes the first pad, wherein the auxiliary marking layer AML has a first marking structure TS1 and a second marking structure TS2, and at least part of the first pad PAD1 is surrounded by the second marking structure TS2, and both sides of the second marking structure TS2 have the first marking structure TS1. In the present disclosure, the surrounding can be continuous (the second marking structure TS2 is an annular structure, and the auxiliary marking layer AML is easier to prepare by using this structure), or it can be discontinuous (in other words, the second marking structure TS2 can include a plurality of third structures, and the plurality of third structures are arranged in sequence along the circumferential direction of the corresponding first pad PAD1), and the two sides of the second marking structure TS2 refer to the inner side of the second marking structure TS2 and the outer side of the second marking structure TS2. It can be understood that in the above-mentioned first pad PAD1, two adjacent first pads PAD1 are separated by the auxiliary marking layer AML.

[0064] In the present disclosure, the brightness of the second mark structure TS2 is greater than the brightness of the first mark structure TS1. It can be understood that the reflectivity of the second mark structure TS2 is greater than the reflectivity of the first mark structure TS1. In one example, the reflectivity of the second mark structure TS2 is greater than 50%, and the reflectivity of the first mark structure TS1 is less than 50%. For example, the reflectivity of the second mark structure TS2 is 55%, and the reflectivity of the first mark structure TS1 is 5%. For another example, the reflectivity of the second mark structure TS2 is 60%, and the reflectivity of the first mark structure TS1 is 10%. For another example, the reflectivity of the second mark structure TS2 is 70%, and the reflectivity of the first mark structure TS1 is 20%. For another example, the reflectivity of the second mark structure TS2 is 95%, and the reflectivity of the first mark structure TS1 is 45%. In other examples, the first mark structure TS1 and the second mark structure TS2 may also adopt other reflectivities not shown.

[0065] In other words, the light blocking rate (light absorption rate) of the second mark structure TS2 is less than the light blocking rate of the first mark structure TS1. In one example, the light blocking rate of the second mark structure TS2 is less than 50%, and the light blocking rate of the first mark structure TS1 is greater than 50%. For example, the light blocking rate of the first mark structure TS1 is 55%, and the light blocking rate of the second mark structure TS2 is 5%. For another example, the light blocking rate of the first mark structure TS1 is 60%, and the light blocking rate of the second mark structure TS2 is 10%. For another example, the light blocking rate of the first mark structure TS1 is 80%, and the light blocking rate of the second mark structure TS2 is 25%. For another example, the light blocking rate of the first mark structure TS1 is 95%, and the light blocking rate of the second mark structure TS2 is 45%. In other examples, the first mark structure TS1 and the second mark structure TS2 may also adopt other light blocking rates not shown.

[0066] It can be understood that the contrast between the first mark structure TS1 and the second mark structure TS2 is greater than 0. For example, the contrast between the first mark structure TS1 and the second mark structure TS2 is not less than 10. For another example, the contrast between the first mark structure TS1 and the second mark structure TS2 is not less than 50. For another example, the contrast between the first mark structure TS1 and the second mark structure TS2 is not less than 100. For another example, the contrast between the first mark structure TS1 and the second mark structure TS2 is not less than 150. For another example, the contrast between the first mark structure TS1 and the second mark structure TS2 is not less than 178. Of course, in other examples, the contrast between the first mark structure TS1 and the second mark structure TS2 can also be other parameters not shown in the present disclosure.

[0067] In the present disclosure, an auxiliary marking layer AML is provided, and the brightness difference between the first marking structure TS1 and the second marking structure TS2 is utilized to accurately identify the second marking structure TS2, thereby accurately identifying the position of the first pad PAD1, thereby improving the success rate of image recognition of the die bonder, and reducing the missing part rate and the offset rate of the die bonder (see Figure 6 and Figure 7 , the die bonder can confirm the position of the first pad PAD1 by identifying the second marking structure TS2 in the red dotted box). In addition, in the present disclosure, the first marking structure TS1 is set on both sides of the second marking structure TS2. In other words, the second marking structure TS2 is set in the middle of the first marking structure TS1 to form a dark-bright-dark three-layer structure. By setting the brightness difference between the first marking structure TS1 and the second marking structure TS2, the contrast is improved, and the probability of the second marking structure TS2 being ready to be identified can be further improved.

[0068] In one embodiment of the present disclosure, the first marking structure TS1 may include a plurality of first marking units, and the second marking structure TS2 may include a plurality of second marking units, wherein the plurality of first marking units correspond one to one with the plurality of second marking units. The first marking unit includes a first structure and a second structure, and the first structure and the second structure may be continuous annular structures, the inner ring opening of the second structure TS12 forms a first opening, the second marking unit is an annular structure, and the second marking unit is located between the first structure TS11 and the second structure TS12. It can be understood that the first structure TS11, the second marking unit and the second structure TS12 are connected in sequence, and the first structure TS11, the second marking unit and the second structure TS12 are arranged in sequence along the direction close to the first pad PAD1. In this example, each first marking unit is independently arranged, and each second marking unit is independently arranged (not shown in the figure). In this example, a first marking unit and a second marking unit are independently arranged for each first pad PAD1. In other examples, the first structure and the second structure may be discontinuous annular structures.

[0069] In another embodiment of the present disclosure, each first marking structure TS1 and each second marking structure TS2 can be shared. In one example, the first marking structure TS1 includes a plurality of second structures TS12, and the plurality of second structures TS12 correspond one-to-one to the plurality of first pads PAD1. The second structure TS12 exposes the corresponding first pads PAD1, and the second structure TS12 is located between the second marking structure TS2 and the first pads PAD1, and the second structure TS12 surrounds the first pads PAD1. In this example, each second structure TS12 is arranged around the corresponding first pad PAD1, and the second marking structure TS2 can form a grid-like structure, surrounding each second structure TS12 (the second structure TS12 is located in the grid). In this way, the same second marking structure TS2 can be shared between two adjacent first pads PAD1, and the shared second structure TS12 forms a dark-bright-dark three-layer structure, and as many auxiliary marking layers AML as possible can be set within a limited space to increase the accuracy of the die bonding machine recognition.

[0070] In one embodiment of the present disclosure, each second structure TS12 corresponds to each first pad PAD1 one by one. Figure 1-Figure 5, the first marking structure TS1 includes a first structure TS11 and a second structure TS12; wherein the number of the second structures TS12 is multiple, and each second structure TS12 corresponds to each first pad PAD1 one by one (an auxiliary marking layer AML is provided on the periphery of any first pad PAD1); the second structure TS12 is an annular structure, and the inner ring opening of the annular structure forms a first opening exposing the corresponding first pad PAD1; the second marking structure TS2 is a grid-like structure having multiple second openings, and the second openings correspond to the second structures TS12 one by one, and the orthographic projection of the second openings on the substrate substrate SBT is consistent with the orthographic projection of the outer ring edge of the second structure TS12 on the substrate substrate SBT. The second structure TS12 is located in the corresponding second opening (located in the grid), and the second structure TS12 is connected to the second marking structure TS2; the first structure TS11 is arranged around the outer edge of the second marking structure TS2, so that the first pad PAD1 located on the inner side of the light-emitting panel LPNL forms a dark-bright-dark three-layer structure with the second structure TS12 and the second marking structure TS2, and the first pad PAD1 of the light-emitting panel LPNL uses the first structure TS11, the second marking structure TS2 and the second structure TS12 to form a dark-bright-dark three-layer structure, ensuring that each first pad PAD1 has a dark-bright-dark brightness area around its side, which is conducive to the accurate identification of the die-bonding machine. In the structure of the auxiliary marking layer AML disclosed in the present invention, any two adjacent first pads PAD1 share the second marking structure TS2 and the second structure TS12 located therebetween. The structure in this example is used to facilitate the formation of the auxiliary marking layer AML, and can appropriately increase the widths of the first structure TS11, the second structure TS12 and the second marking structure TS2 in a limited area, which is more conducive to the recognition of the die bonder and improves the recognition accuracy and recognition success rate.

[0071] In one embodiment of the present disclosure, the width of the first structure TS11 is not less than 4μm. The width of the second structure TS12 is not less than 4μm, and the width of the second marking structure TS2 is not less than 4μm. Among them, the width in the present disclosure refers to the size of the first structure TS11, the size of the second structure TS12, and the size of the second marking structure TS2 along the arrangement direction of two adjacent first pads PAD1. In the present disclosure, the sizes of the first structure TS11, the second structure TS12, and the second marking structure TS2 are all limited to not less than 4μm, which can ensure that the die bonding machine can recognize the auxiliary marking layer AML.

[0072] In one embodiment of the present disclosure, the second marking structures TS2 may be arranged in an array, which is convenient for being identified by a die-bonding machine.

[0073] In one embodiment of the present disclosure, the widths of the first structure TS11 and the second structure TS12 are equal. In this way, it is easy to prepare and can ensure that when the second marking structure TS2 is identified, it is not interfered by other circuit structures or pads PAD on the driving layer, which can improve the recognition success rate. In one example, the widths of the first structure TS11, the second structure TS12 and the second marking structure TS2 are equal.

[0074] In one embodiment of the present disclosure, the first marking structure TS1 is prepared with a light-blocking material, and the second marking structure TS2 is prepared with a reflective material. In this way, the light-blocking material and the reflective material can naturally form patterns close to different colors, which is convenient for being recognized by the die bonding machine. In one example, the light-blocking material can be black, and in one example, the light-blocking material can be a photosensitive black resin material, for example, it can be dyed polymethylmethacrylate (PMMA). Of course, it can also be other materials that meet the relevant functions that are not shown. In one example, the reflective material can be a pure metal material, for example, it can be a material with a high reflectivity such as silver and aluminum. In another example, the reflective material can be a composite material, for example, it can be a composite structure of metal and oxide, and the metal is arranged close to the driving layer, and the oxide can prevent the metal from being oxidized, thereby increasing the life of the auxiliary marking layer AML. In one example, the oxide can be SiOx, SiN and other materials.

[0075] In one embodiment of the present disclosure, the first mark structure TS1 and the second mark structure TS2 are at the same height. In other words, the distance between the first mark structure TS1 and the substrate substrate SBT is equal to the distance between the second mark structure TS2 and the substrate substrate SBT. It can be understood that the first mark structure TS1 is flush with the second mark structure TS2. In this way, it can be ensured that they are at the same depth of field under the visual recognition system, preventing the first mark structure TS1 and the second mark structure TS2 from being blurred when the die bonder recognizes them when they are not at the same height.

[0076] In an example, the thickness of the first mark structure TS1 is 0.1 μm to 1 μm. Of course, the thickness of the first mark structure TS1 can be appropriately adjusted according to process requirements and process capabilities, so that the thickness of the first mark structure TS1 is not within the range of 0.1 μm to 1 μm.

[0077] In one embodiment of the present disclosure, the distance between the surface of the auxiliary marking layer AML away from the substrate substrate SBT and the substrate substrate SBT is equal to the distance between the surface of the first pad PAD1 away from the substrate substrate SBT and the substrate substrate SBT. It can be understood that the surface of the auxiliary marking layer AML away from the substrate substrate SBT is flush with the surface of the first pad PAD1 away from the substrate substrate SBT. In this way, the auxiliary marking layer AML can be prepared directly above the driving layer. In the present disclosure, flush means being roughly in the same plane, and preparation errors are allowed. Equal means being roughly equal, and preparation errors are allowed.

[0078] In another embodiment of the present disclosure, there is a step difference between the surface of the auxiliary marking layer AML away from the substrate SBT and the surface of the first pad PAD1 away from the substrate SBT, so that the visual recognition system of the die bonder will have different depths of field for the auxiliary marking layer AML (the second marking structure TS2) and the first pad PAD1. When the focus is on the auxiliary marking layer AML (the second marking structure TS2), the first pad PAD1 as the background will be blurred, thereby improving the recognition accuracy. In one example, see Figure 3 , the distance between the surface of the auxiliary marking layer AML away from the substrate SBT and the substrate SBT is smaller than the distance between the surface of the first pad PAD1 away from the substrate SBT and the substrate SBT. Specifically, the second insulating layer FL2 has a groove for accommodating the auxiliary marking layer AML, and the auxiliary marking layer AML is located in the groove to form the step difference. In another example, see Figure 4 , the distance between the surface of the auxiliary marking layer AML away from the substrate substrate SBT and the substrate substrate SBT is greater than the distance between the surface of the first pad PAD1 away from the substrate substrate SBT and the substrate substrate SBT. Specifically, there is an insulating support structure ISS between the auxiliary marking layer AML and the second insulating layer FL2, and the insulating support structure ISS has a third opening exposing each first pad PAD1, and the auxiliary marking layer AML is arranged on the insulating support structure ISS to form the step difference. Among them, the orthographic projection of the insulating support structure ISS on the substrate substrate SBT is not less than the orthographic projection of the auxiliary marking layer AML on the substrate substrate SBT. In one example, the orthographic projection of the insulating support structure ISS on the substrate substrate SBT just covers the orthographic projection of the auxiliary marking layer AML on the substrate substrate SBT. In another example, the orthographic projection of the insulating support structure ISS on the substrate substrate SBT is greater than the orthographic projection of the auxiliary marking layer AML on the substrate substrate SBT, and the orthographic projection of the auxiliary marking layer AML on the substrate substrate SBT is located within the orthographic projection of the insulating support structure ISS on the substrate substrate SBT, so that it is convenient to adjust the position of the auxiliary marking structure according to needs to set the auxiliary marking structure.

[0079] In one embodiment of the present disclosure, the auxiliary marking layer AML also exposes the corresponding second pad, third pad and other pad structures, and the second pad and third pad can be positioned in the same manner.

[0080] In one embodiment of the present disclosure, the auxiliary marking structure can be formed by first preparing the second marking structure TS2 and then preparing the first marking structure TS1. Of course, the present disclosure does not limit the specific preparation method of the auxiliary marking structure.

[0081] The solution disclosed in the present invention can be used for a solution with a smaller chip pitch to improve the recognition rate of a die bonder. For example, the chip pitch can be no less than 25 μm.

[0082] The embodiment of the present disclosure also provides a display device, which includes any one of the light-emitting panels LPNL described in the above light-emitting panel LPNL embodiment. The display device can be a television, a computer screen, a mobile phone screen, or other types of display devices. Since the display device includes any one of the light-emitting panels LPNL described in the above light-emitting panel LPNL embodiment, it has the same beneficial effects, and the present disclosure will not be repeated here.

[0083] In one embodiment of the present disclosure, the light emitting panel LPNL can be directly displayed. In another embodiment, the light emitting panel LPNL is used as a direct backlight source in conjunction with a liquid crystal display panel for display.

[0084] Those skilled in the art will readily appreciate other embodiments of the present disclosure after considering the specification and practicing the invention disclosed herein. This application is intended to cover any modification, use or adaptation of the present disclosure, which follows the general principles of the present disclosure and includes common knowledge or customary techniques in the art that are not disclosed in the present disclosure. The specification and examples are intended to be exemplary only, and the true scope and spirit of the present disclosure are indicated by the appended claims.

Claims

1. A light-emitting panel, characterized in that: have: A driving substrate, wherein the driving substrate has at least a plurality of first pads; an auxiliary marking layer, the auxiliary marking layer being disposed on the driving substrate and exposing the first pad, the auxiliary marking layer having a first marking structure and a second marking structure, at least a portion of the first pad being surrounded by the second marking structure, both sides of the second marking structure having the first marking structure, and a brightness of the second marking structure being greater than a brightness of the first marking structure; The electronic component layer comprises at least a plurality of light emitting components, and at least part of the first pads are connected to the light emitting components.

2. The light emitting panel according to claim 1, characterized in that: The first marking structure has a plurality of second structures; the second structures correspond to the first pads one by one; and the second structures are located between the second marking structure and the first pads.

3. The light emitting panel according to claim 2, characterized in that: The first marking structure further includes a first structure; a plurality of the second structures correspond one-to-one to a plurality of the first pads; The second marking structure is a grid-like structure, and one second structure is arranged in any grid; the first structure surrounds all the second marking structures.

4. The light emitting panel according to claim 1, characterized in that: The width of the second marking structure is not less than 4 μm; The widths of the first mark structures located on both sides of the second mark structure are not less than 4 μm.

5. The light emitting panel according to claim 1, characterized in that: The first mark structures located on both sides of the second mark structure have the same width.

6. The light emitting panel according to claim 1, characterized in that: A surface of the first mark structure away from the driving substrate is flush with a surface of the second mark structure away from the driving substrate.

7. The light emitting panel according to claim 1, characterized in that: The first marking structure is made of light-blocking material, and the second marking structure is made of light-reflecting material.

8. The light emitting panel according to claim 1, characterized in that: The driving substrate comprises a base substrate and a driving layer; The driving layer is arranged on one side of the substrate, and the auxiliary marking layer is arranged on a side of the driving layer away from the substrate; The surface of the auxiliary marking layer away from the base substrate is flush with the surface of the first pad away from the base substrate; or there is a step difference between the surface of the auxiliary marking layer away from the base substrate and the surface of the first pad away from the base substrate.

9. The light emitting panel according to claim 8, characterized in that: The driving layer has a groove, the orthographic projection of the groove on the base substrate does not overlap with the orthographic projection of the first pad on the base substrate, and the auxiliary marking layer is located in the groove; Alternatively, the light-emitting panel further has an insulating support structure; the insulating support structure is located on a side of the driving layer away from the substrate, the insulating support structure exposes each of the first pads, and the auxiliary marking layer is located on a side of the insulating support structure away from the driving layer.

10. A display device, characterized in that: A light-emitting panel according to any one of claims 1 to 9.

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