Light emitting diode panel

Abstract

The embodiment of the invention discloses a light emitting diode panel. The light emitting diode panel comprises a driving substrate, a light reflecting layer and a light emitting diode, according to the light emitting diode panel, the light reflecting layer provided with the dielectric layer and the reflecting part arranged in the opening of the dielectric layer is arranged below the light emitting diode so as to reflect the light rays downwards emitted by the light emitting diode, and therefore the light emitting brightness of the light emitting diode is improved, and in addition, the reflecting part is arranged in the opening of the dielectric layer so that the light emitting brightness of the light emitting diode can be improved. The effect of protecting the reflecting part is achieved, and the risk that the reflecting part is corroded or damaged is reduced.

Description

Technical Field

[0001] The present application relates to the field of display technology, and in particular to a light emitting diode panel. Background Art

[0002] With the popularity of augmented reality (AR) and virtual reality (VR) technologies, micro-display technology with high brightness and high pixel resolution (PPI) has become the best display solution, and micro-display technology based on silicon-based light-emitting diodes (Micro-LEDs) has become the most competitive display solution. Compared with the traditional LED chip manufacturing process, the manufacturing process of silicon-based light-emitting diodes is more complicated and the size is smaller, resulting in lower luminous efficiency of Micro-LEDs and greater brightness loss. Summary of the invention

[0003] The embodiment of the present application provides a light emitting diode panel, which can improve the light emitting brightness of the light emitting diode epitaxial layer and protect the reflective part at the same time.

[0004] The embodiment of the present application provides a light emitting diode panel, which includes:

[0005] a driving substrate; and

[0006] A reflective layer, the reflective layer is arranged on the driving substrate, the reflective layer comprises a dielectric layer and a reflective portion, the dielectric layer is arranged on the driving substrate, at least one opening is arranged on the dielectric layer, and the reflective portion is arranged in the opening;

[0007] The light emitting diode epitaxial layer comprises a plurality of light emitting diodes arranged at intervals, and the light emitting diodes are arranged on a side of the reflective layer away from the driving substrate.

[0008] Optionally, in some embodiments of the present application, the width of the reflective portion decreases in a direction from the driving substrate to the light emitting diode.

[0009] Optionally, in some embodiments of the present application, the reflective portion has a top reflective surface, a side reflective surface and a bottom surface, the top reflective surface is arranged opposite to the bottom surface, the top reflective surface is close to the light-emitting diode, the bottom surface is far away from the light-emitting diode, the side reflective surface is connected between the top reflective surface and the bottom surface, and the side reflective surface is an inclined surface;

[0010] The included angle between the side reflection surface and the bottom surface is less than or equal to 60 degrees.

[0011] Optionally, in some embodiments of the present application, there are multiple reflective parts, and the multiple reflective parts are spaced apart and evenly arranged.

[0012] Optionally, in some embodiments of the present application, the distance between two adjacent reflection parts is less than or equal to 1 micron.

[0013] Optionally, in some embodiments of the present application, the thickness of the reflective portion is greater than or equal to 1000 angstroms.

[0014] Optionally, in some embodiments of the present application, the dielectric layer includes a first insulating layer and a second insulating layer disposed on a side of the first insulating layer close to the light-emitting diode, and the refractive index of the second insulating layer is greater than the refractive index of the first insulating layer.

[0015] Optionally, in some embodiments of the present application, the thickness of the second insulating layer is greater than the thickness of the first insulating layer.

[0016] Optionally, in some embodiments of the present application, the material of the reflecting part is a conductive material, and the light-emitting diode panel also includes a first conductive layer, which is arranged on the side of the reflecting part and the dielectric layer close to the driving substrate, and the first conductive layer is connected to the first pole of the light-emitting diode through the reflecting part.

[0017] Optionally, in some embodiments of the present application, the light-emitting diode panel further includes a first conductive bonding layer disposed on a side of the first conductive layer close to the driving substrate, the driving substrate includes a second conductive bonding layer, the light-emitting diode panel further includes a protective layer and a second conductive layer, and the second conductive layer is a transparent conductive layer;

[0018] The first conductive bonding layer and the second conductive bonding layer are bonded and connected, the protective layer covers the light-emitting diode epitaxial layer, a hollow opening is provided on the protective layer, the hollow opening exposes the second electrode of the light-emitting diode, and the second conductive layer covers the protective layer and is connected to the second electrode of the light-emitting diode through the hollow opening;

[0019] Grooves are arranged between the light emitting diodes, and the grooves extend toward the driving substrate and penetrate the light reflecting layer, the first conductive layer, the first conductive bonding layer, and the second conductive bonding layer.

[0020] The light-emitting diode panel of the embodiment of the present application is provided with a reflective layer having a dielectric layer and a reflective portion arranged in an opening of the dielectric layer below the light-emitting diode epitaxial layer to reflect the light emitted downward by the light-emitting diode, thereby improving the light brightness of the light-emitting diode. In addition, the reflective portion is arranged in the opening of the dielectric layer, which has the effect of protecting the reflective portion and reducing the risk of the reflective portion being corroded or damaged. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Figure 1is a schematic structural diagram of a light-emitting diode panel provided in an embodiment of the present application;

[0022] Figure 2 yes Figure 1 A magnified view of part A;

[0023] Figure 3 It is a structural schematic diagram of step S1 in the method for preparing a light-emitting diode panel provided in an embodiment of the present application;

[0024] Figure 4 It is a structural schematic diagram of step S2 in the method for preparing a light-emitting diode panel provided in an embodiment of the present application;

[0025] Figure 5 It is a structural schematic diagram of step S3 in the method for preparing a light-emitting diode panel provided in an embodiment of the present application;

[0026] Figure 6 It is a structural schematic diagram of step S4 in the method for preparing a light-emitting diode panel provided in an embodiment of the present application;

[0027] Figure 7 It is a structural schematic diagram of step S5 in the method for preparing a light emitting diode panel provided in an embodiment of the present application. DETAILED DESCRIPTION

[0028] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative work are within the scope of protection of the present application. In addition, it should be understood that the specific implementation methods described herein are only used to illustrate and explain the present application, and are not used to limit the present application. In the present application, unless otherwise stated, the directional words used, such as "upper" and "lower", generally refer to the upper and lower parts of the device in actual use or working state, specifically the drawing direction in the drawings; while "inside" and "outside" refer to the outline of the device; the terms "first", "second", "third", etc. are used only as markings, and no numerical requirements are imposed or order is established.

[0029] The embodiment of the present application provides a light emitting diode panel, which is described in detail below. It should be noted that the description order of the following embodiments is not intended to limit the preferred order of the embodiments.

[0030] Please refer to Figure 1 and Figure 2 The embodiment of the present application provides a light-emitting diode panel 100 , which includes a driving substrate 11 , a reflective layer 12 and a light-emitting diode epitaxial layer 13 .

[0031] The light reflecting layer 12 is disposed on the driving substrate 11 . The light emitting diode epitaxial layer 13 is disposed on a side of the light reflecting layer 12 away from the driving substrate 11 .

[0032] The reflective layer 12 includes a dielectric layer 121 and a reflective portion 122. The dielectric layer 121 is disposed on the driving substrate 11. At least one opening 12a is disposed on the dielectric layer 121, and the reflective portion 122 is disposed in the opening 12a.

[0033] The light emitting diode epitaxial layer 13 includes a plurality of light emitting diodes LED arranged at intervals. The light emitting diodes LED are arranged on a side of the reflective layer 12 away from the driving substrate 11 .

[0034] The light-emitting diode panel 100 of the embodiment of the present application is provided with a reflective layer 12 having a dielectric layer 121 and a reflective portion 122 arranged in an opening 12a of the dielectric layer 121 below the light-emitting diode LED to reflect light emitted downward by the light-emitting diode LED, thereby improving the luminous brightness of the light-emitting diode LED. In addition, the reflective portion 122 is arranged in the opening 12a of the dielectric layer 121, which has the effect of protecting the reflective portion 122 and reducing the risk of the reflective portion 122 being corroded or damaged.

[0035] Optionally, the light emitting diode LED may be a micro light emitting diode (Micro-LED).

[0036] Optionally, a light reflecting layer 12 is provided corresponding to a light emitting diode LED.

[0037] Optionally, the width k1 of the reflective portion 122 decreases in the direction from the drive substrate 11 to the light emitting diode LED. Since the reflective portion 122 is disposed in the opening 12a, the width of the opening 12a also decreases by k1 in the direction from the drive substrate 11 to the light emitting diode LED. The side surface of the reflective portion 122 is in direct contact with the side wall of the opening 12a.

[0038] Since the width k1 of the reflective portion 122 decreases gradually, the reflective portion 122 has a large reflective area to improve the reflective effect. In addition, the side reflective surfaces f2 of two adjacent reflective portions 122 form a reflective groove, which can convert large-angle light into small-angle light and improve the light emitting brightness of the LED at a positive viewing angle.

[0039] Optionally, the reflecting portion 122 has a top reflecting surface f1, a side reflecting surface f2 and a bottom surface f3, the top reflecting surface f1 is arranged opposite to the bottom surface f3, the top reflecting surface f1 is close to the light emitting diode LED, the bottom surface f3 is far away from the light emitting diode LED, the side reflecting surface f2 is connected between the top reflecting surface f1 and the bottom surface f3, and the side reflecting surface f2 is an inclined surface;

[0040] The angle a between the side reflective surface f2 and the bottom surface f3 is less than or equal to 60 degrees. For example, the angle a can be 60 degrees, 55 degrees, 50 degrees, 45 degrees, 40 degrees, 35 degrees, 30 degrees, 25 degrees, 20 degrees, 15 degrees, 10 degrees or 5 degrees.

[0041] Under the same thickness, the smaller the angle a is, the larger the area of ​​the side reflection surface f2 is, and the larger the effective reflective area is, which can further improve the light emitting effect of the light emitting diode LED.

[0042] In addition, since the reflective portion 122 is disposed in the opening 12a, the sidewall slope angle of the opening 12a is equal to the angle a. The smaller the sidewall slope angle of the opening 12a is, the easier it is for the reflective portion 122 to be filled in the opening 12a, thereby improving the forming integrity of the reflective portion 122.

[0043] Optionally, there are multiple reflective parts 122, and the multiple reflective parts 122 are spaced apart and evenly arranged. The multiple reflective parts 122 are spaced apart and evenly arranged, which achieves the effect of uniform light reflection and improves the uniformity of light emitted by the light emitting diode LED.

[0044] Optionally, the distance h between two adjacent reflective portions 122 is less than or equal to 1 micrometer, for example, 1 micrometer, 0.9 micrometer, 0.8 micrometer, 0.7 micrometer, 0.6 micrometer, 0.5 micrometer, 0.4 micrometer, 0.3 micrometer, 0.2 micrometer or 0.1 micrometer.

[0045] The distance h between two adjacent reflective portions 122 is set to be less than or equal to 1 micrometer, so as to reduce the spacing between the reflective portions 122 and increase the density of the reflective portions 122 to increase the reflective area, thereby improving the reflective efficiency.

[0046] Optionally, the thickness of the reflective portion 122 is greater than or equal to 1000 angstroms. For example, the thickness of the reflective portion 122 may be 1000 angstroms, 1100 angstroms, 1200 angstroms, 1300 angstroms, 1400 angstroms, 1500 angstroms, 1600 angstroms, 1700 angstroms, 1800 angstroms, 1900 angstroms or 2000 angstroms.

[0047] It is understandable that the greater the thickness of the reflective portion 122 is, the higher the reflectivity of the reflective portion 122 is. Therefore, the thickness of the reflective portion 122 is set to be greater than or equal to 1000 angstroms to improve the reflectivity of the reflective portion 122.

[0048] Optionally, the dielectric layer 121 includes a first insulating layer z1 and a second insulating layer z2 disposed on a side of the first insulating layer z1 close to the light emitting diode LED, and a refractive index of the second insulating layer z2 is greater than a refractive index of the first insulating layer z1.

[0049] Since the refractive index of the second insulating layer z2 is greater than that of the first insulating layer z1, the interface between the second insulating layer z2 and the first insulating layer z1 is a total reflection interface, which can reflect the downward light of the light emitting diode LED, thereby improving the light extraction efficiency of the light emitting diode LED.

[0050] Optionally, the thickness of the second insulating layer z2 is greater than the thickness of the first insulating layer z1. This arrangement enables the total reflection interface to be located on the side of the dielectric layer 121 close to the driving substrate 11, so as to improve the luminance of the light emitting diode LED at a front viewing angle.

[0051] In some embodiments, the dielectric layer 121 is a single-layer structure.

[0052] Optionally, the material of the reflective part 122 is a conductive material. The LED panel 100 further includes a first conductive layer 123, which is disposed on a side of the reflective part 122 and the dielectric layer 121 close to the drive substrate 11. The first conductive layer 123 is connected to the first electrode of the LED through the reflective part 122.

[0053] Optionally, the LED panel 100 further includes a first conductive bonding layer 124 disposed on a side of the first conductive layer 123 close to the driving substrate 11. The driving substrate 11 includes a second conductive bonding layer 111, and the LED panel 100 further includes a protective layer 14 and a second conductive layer 15, wherein the second conductive layer 15 is a transparent conductive layer;

[0054] The first conductive bonding layer 124 is bonded to the second conductive bonding layer 111. A groove g1 is provided between the light emitting diodes LED, and the groove g1 extends toward the driving substrate 11 and penetrates the reflective layer 12, the first conductive layer 123, the first conductive bonding layer 124 and the second conductive bonding layer 111.

[0055] The protective layer 14 covers the LED epitaxial layer 13 and the groove g1. The protective layer 14 is provided with a hollow opening 14a, which exposes the second electrode of the LED. The second conductive layer 15 covers the protective layer 14 and is connected to the second electrode of the LED through the hollow opening 14a.

[0056] The method for preparing the light emitting diode panel 100 of this embodiment includes the following steps:

[0057] Step S1, please refer to Figure 3 , a dielectric film is grown on the light-emitting diode material layer FG, and the dielectric film is patterned to form a dielectric layer 121 and an opening 12a.

[0058] Optionally, the material of the dielectric layer 121 may be at least one of silicon oxide, silicon nitride and titanium oxide.

[0059] The thickness of the dielectric layer 121 is greater than or equal to 1000 angstroms, so that the thickness of the subsequent reflective portion 122 is larger to improve the reflectivity of the reflective portion 122 .

[0060] Optionally, the thickness of the dielectric layer 121 may be 1000 angstroms, 1100 angstroms, 1200 angstroms, 1300 angstroms, 1400 angstroms, 1500 angstroms, 1600 angstroms, 1700 angstroms, 1800 angstroms, 1900 angstroms or 2000 angstroms, etc.

[0061] The slope angle b of the side wall of the opening 12 a is less than or equal to 60 degrees, so that the subsequent reflective portion 122 can be easily filled in the opening 12 a.

[0062] Optionally, the slope angle b of the side wall of the opening 12a may be 60 degrees, 55 degrees, 50 degrees, 45 degrees, 40 degrees, 35 degrees, 30 degrees, 25 degrees, 20 degrees, 15 degrees, 10 degrees or 5 degrees.

[0063] Optionally, the distance between the two openings 12 a is less than or equal to 1 micrometer, so as to increase the subsequent arrangement density of the reflective portions 122 .

[0064] Step S2, please refer to Figure 4 , a reflective material layer is formed on the dielectric layer 121, the reflective material layer fills the opening 12a and covers the side of the dielectric layer 121 away from the light-emitting diode LED, and then the reflective material layer on the dielectric layer 121 is removed, and the reflective material layer in the opening 12a is retained to form a reflective portion 122.

[0065] Optionally, the CMP process is used to grind away the raised reflective material layer on the dielectric layer, leaving the reflective material layer in the opening 12 a of the dielectric layer 121 .

[0066] Optionally, the material of the reflective portion 122 may be a metal material such as aluminum, silver or gold, or may be a material such as white ink.

[0067] It should be noted that, in some embodiments, the reflective portion 122 includes a first reflective portion and a second reflective portion, and the reflectivity of the second reflective portion is greater than the reflectivity of the first reflective portion. In the region of a single light-emitting diode LED, the first reflective portion is located in the middle region of the dielectric layer 121, and the second reflective portion is located in the peripheral edge region of the dielectric layer 121. The material of the first reflective portion is metal, which can be reused to electrically connect the first conductive layer 123 and the light-emitting diode LED. Such a setting can further improve the light output brightness of the light-emitting diode LED and the uniformity of the light output of a single light-emitting diode LED.

[0068] In addition, since the second reflective portion made of non-metallic material is located at the peripheral edge area, the metal exposure and corrosion of the metal reflective portion can be further avoided during step S5. Optionally, the material of the second reflective portion 122 is white ink or other non-metallic materials.

[0069] Step S3, please refer to Figure 5 , a first conductive layer 123 and a first conductive bonding layer 124 are sequentially formed on the dielectric layer 121 to form a light emitting diode device layer.

[0070] Optionally, the material of the first conductive bonding layer 124 may be at least one of Cr, Ti, Pt, Sn, Au and Cu, or a combination of any of the above metal elements.

[0071] Step S4, please refer to Figure 6 , the light emitting diode device layer and the driving substrate 11 are bonded through a bonding process.

[0072] The driving substrate 11 includes a second conductive bonding layer 111, a substrate 112 and a thin film transistor layer 113. The thin film transistor layer 113 is disposed on the substrate 112, and the second conductive bonding layer 111 is disposed on a side of the thin film transistor layer 113 away from the substrate 112.

[0073] Optionally, the substrate 112 may be a silicon-based substrate or a glass substrate.

[0074] Optionally, the material of the second conductive bonding layer 111 may be at least one of Cr, Ti, Pt, Sn, Au and Cu, or a combination of any of the above metal elements.

[0075] Step S5, please refer to Figure 7 , patterning the light emitting diode device layer and the second conductive bonding layer 111 to form a plurality of light emitting diodes LED and grooves g1.

[0076] Step S6, please refer to Figure 1 , a patterned protection layer 14 and a second conductive layer 15 are sequentially formed on the patterned light emitting diode epitaxial layer 13 .

[0077] The protective layer 14 is provided with a hollow opening 14 a, the hollow opening 14 a exposing the second electrode of the light emitting diode LED, and the second conductive layer 15 covers the protective layer 14 and is connected to the second electrode of the light emitting diode LED through the hollow opening 14 a.

[0078] Optionally, the material of the second conductive layer 15 is a transparent conductive material, for example, metal oxides such as indium tin oxide and indium zinc oxide.

[0079] The light-emitting diode panel of the embodiment of the present application is provided with a reflective layer having a dielectric layer and a reflective portion arranged in an opening of the dielectric layer below the light-emitting diode to reflect the light emitted downward by the light-emitting diode, thereby improving the light brightness of the light-emitting diode. In addition, the reflective portion is arranged in the opening of the dielectric layer, which has the effect of protecting the reflective portion and reducing the risk of the reflective portion being corroded or damaged.

[0080] The above is a detailed introduction to a light-emitting diode panel provided in an embodiment of the present application. Specific examples are used herein to illustrate the principles and implementation methods of the present application. The description of the above embodiments is only used to help understand the method of the present application and its core idea. At the same time, for technicians in this field, according to the idea of ​​the present application, there will be changes in the specific implementation methods and application scope. In summary, the content of this specification should not be understood as a limitation on the present application.

Claims

1. A light emitting diode panel, characterized in that: include: Driver substrate; as well as A reflective layer, the reflective layer is arranged on the driving substrate, the reflective layer comprises a dielectric layer and a reflective portion, the dielectric layer is arranged on the driving substrate, at least one opening is arranged on the dielectric layer, and the reflective portion is arranged in the opening; The light emitting diode epitaxial layer comprises a plurality of light emitting diodes arranged at intervals, and the light emitting diodes are arranged on a side of the reflective layer away from the driving substrate.

2. The light emitting diode panel according to claim 1, characterized in that: The width of the reflection portion decreases gradually in a direction from the driving substrate to the light emitting diode.

3. The light emitting diode panel according to claim 2, characterized in that: The reflecting portion comprises a top reflecting surface, a side reflecting surface and a bottom surface, wherein the top reflecting surface is arranged opposite to the bottom surface, the top reflecting surface is close to the light emitting diode, the bottom surface is far away from the light emitting diode, the side reflecting surface is connected between the top reflecting surface and the bottom surface, and the side reflecting surface is an inclined surface; The included angle between the side reflection surface and the bottom surface is less than or equal to 60 degrees.

4. The light emitting diode panel according to claim 3, characterized in that: The plurality of reflecting parts are spaced apart and evenly arranged.

5. The light emitting diode panel according to claim 4, characterized in that: The distance between two adjacent reflection parts is less than or equal to 1 micrometer.

6. The light emitting diode panel according to claim 1, characterized in that: The thickness of the reflective portion is greater than or equal to 1000 angstroms.

7. The light emitting diode panel according to claim 1, characterized in that: The dielectric layer includes a first insulating layer and a second insulating layer arranged on a side of the first insulating layer close to the light emitting diode, and the refractive index of the second insulating layer is greater than the refractive index of the first insulating layer.

8. The light emitting diode panel according to claim 7, characterized in that: The thickness of the second insulating layer is greater than that of the first insulating layer.

9. The light emitting diode panel according to any one of claims 1 to 8, characterized in that: The material of the reflective part is a conductive material. The LED panel further comprises a first conductive layer, which is arranged on a side of the reflective layer close to the drive substrate. The first conductive layer is connected to the first electrode of the LED through the reflective part.

10. The light emitting diode panel according to claim 9, characterized in that: The light-emitting diode panel further comprises a first conductive bonding layer disposed on a side of the first conductive layer close to the driving substrate, the driving substrate comprises a second conductive bonding layer, the light-emitting diode panel further comprises a protective layer and a second conductive layer, and the second conductive layer is a transparent conductive layer; The first conductive bonding layer and the second conductive bonding layer are bonded to each other, a groove is arranged between the light-emitting diodes, the groove extends in the direction of the driving substrate and penetrates the reflective layer, the first conductive layer, the first conductive bonding layer and the second conductive bonding layer, the protective layer covers the light-emitting diode epitaxial layer and the groove, a hollow opening is arranged on the protective layer, the hollow opening exposes the second pole of the light-emitting diode, and the second conductive layer covers the protective layer and is connected to the second pole of the light-emitting diode through the hollow opening.

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