Piezoelectric semiconductor energy collection device

Abstract

The invention relates to the field of semiconductor materials, in particular to a focusing piezoelectric semiconductor energy collecting device which innovatively covers multiple aspects of materials, processes and structures. A novel InGaN alloy and a multilayer heterojunction material are designed, and piezoelectric and electrical properties are optimized; mOCVD and transfer printing processes are improved, and the preparation precision and the yield are improved. The cantilever beam and the flexible laminated structure are adaptive to different scenes, and a monitoring regulation and control system is also arranged to guarantee the performance. The composite system expands performance, the stability is improved through low-temperature and self-repairing design, special requirements are met through miniaturized customization, and an efficient self-power-supply scheme is provided for the Internet of Things and wearable equipment.

Description

Technical Field

[0001] The present invention relates to the field of information management systems, and in particular to a piezoelectric semiconductor energy collection device. Background Art

[0002] With the rapid development of science and technology, the Internet of Things, wearable devices and wireless sensor networks are booming, and the demand for autonomous energy supply technology is becoming more and more urgent. Traditional battery-powered methods have many limitations, such as limited battery life and the need for regular replacement. In remote areas or human implanted device scenarios, battery replacement is expensive and inconvenient. Piezoelectric semiconductor energy harvesting devices cleverly combine piezoelectric properties with semiconductor electrical properties. In theory, they can efficiently convert weak mechanical energy in the environment, such as human movement and machine vibration, into electrical energy, provide continuous power for microelectronic devices, and achieve energy self-sufficiency, which has great application potential. However, piezoelectric semiconductor energy harvesting devices at this stage face many difficulties. From a material perspective, the crystal structure of most piezoelectric semiconductor materials is not ideal, resulting in a low piezoelectric coefficient, which greatly reduces the efficiency of converting mechanical energy into electrical energy; the carrier mobility is limited and the charge transfer is slow, which further weakens the energy conversion efficiency. In terms of preparation technology, it is complex and difficult to control accurately. Slight changes in the process parameters of metal organic chemical vapor deposition (MOCVD) will cause uneven material composition and poor crystallinity. Transfer printing technology is not mature enough, which can easily cause material damage and interface contamination, resulting in poor product consistency and low yield, making it difficult to meet the stringent requirements of large-scale commercial production. The long-term stability of the device is also worrying. Frequent mechanical vibrations and complex environmental factors can easily cause performance degradation, which greatly hinders its practical application and promotion. Innovative means are urgently needed to overcome these problems. Summary of the invention

[0003] The present invention provides a piezoelectric semiconductor energy collection device, comprising:

[0004] A piezoelectric semiconductor material, wherein the piezoelectric semiconductor material is a binary piezoelectric semiconductor alloy based on indium gallium nitride (InGaN), wherein the indium (In) content is between 30% and 50%, and is doped with a scandium-containing organic compound tri(isopropyl) scandium (Sc(i-Pr)3) accounting for 0.05% to 0.15% of the total mass; or an AlN / GaN / InN multilayer piezoelectric semiconductor heterojunction, wherein the AlN layer is 10-20nm thick, the GaN layer is 30-50nm thick, and the InN layer is 20-40nm thick;

[0005] The device structure is a cantilever beam array type, each cantilever beam unit is composed of a piezoelectric semiconductor film, a metal electrode and a flexible substrate, the cantilever beam length is 1-3cm, and the width is 0.1-0.3cm; or a flexible film stack type, using polyimide (PI) as a flexible substrate, and stacking a piezoelectric semiconductor layer, a metal electrode layer and a dielectric layer in sequence.

[0006] Furthermore, the InGaN binary piezoelectric semiconductor alloy is prepared by a metal organic chemical vapor deposition (MOCVD) process, and the flow ratio of trimethyl indium (TMIn), trimethyl gallium (TMGa), and ammonia (NH3) in the reaction gas flow is maintained at 1:2:10-1:3:15, the reaction temperature is set at 700-900°C, and a pulsed air intake mode is adopted with a duty cycle of 20%-40%.

[0007] Furthermore, the multilayer piezoelectric semiconductor heterojunction is assembled by transfer printing technology, and polydimethylsiloxane (PDMS) containing silicon is selected as the stamp material to accurately control the contact pressure and time between the stamp and the substrate.

[0008] Furthermore, it also includes an in-situ piezoelectric and electrical performance monitoring system, which can track the piezoelectric coefficient, open circuit voltage, and short circuit current of the material at each stage of growth and device assembly in real time. When the piezoelectric coefficient fluctuates by more than 5%, or the open circuit voltage changes by more than 10%, the subsequent process parameters are automatically adjusted.

[0009] Furthermore, it is equipped with an online microstructure observation system, which uses a scanning electron microscope (SEM) in conjunction with a transmission electron microscope (TEM). The SEM captures the surface morphology and pore conditions of the material, and the TEM analyzes the internal structure of the grains and the quality of the heterojunction interface, so as to adjust the preparation process in a timely manner.

[0010] Furthermore, the piezoelectric semiconductor energy harvesting device is used to power wearable health monitoring equipment, using the mechanical energy of daily human movement to convert into electrical energy to continuously power the heart rate and blood pressure monitoring modules and wireless communication modules.

[0011] Furthermore, the piezoelectric semiconductor energy harvesting device is used to power wireless sensor nodes in the Internet of Things, and uses the mechanical energy of machine vibration and fluid impact in industrial environments to supplement electrical energy.

[0012] Furthermore, it also includes a composite piezoelectric system, in which the piezoelectric semiconductor material, InGaN and ZnO piezoelectric semiconductor are composited by co-precipitation or physical mixing, and the composite ratio is between 1:1-3:1.

[0013] Furthermore, an organic additive containing ethylene glycol is added in an amount of 5% to 10% of the total raw material mass during material synthesis to ensure that the piezoelectric performance degradation amplitude is less than 15% in a low temperature environment of -30°C.

[0014] Furthermore, the piezoelectric semiconductor material incorporates 0.5%-1% of the material mass of organic small molecules containing disulfide bonds. When microcracks appear inside the material due to stress, the disulfide bonds break and reconnect under heat or light stimulation, repairing the microcracks and maintaining device performance.

[0015] Beneficial effects:

[0016] The present invention brings all-round improvement to piezoelectric semiconductor energy harvesting devices. In terms of material optimization, the new InGaN alloy and multi-layer heterojunction design increase the piezoelectric coefficient by 20%-40%, the carrier mobility by 30%-50%, and significantly enhance the ability to convert mechanical energy into electrical energy. After the preparation process is improved, the production efficiency rises by 30%-50%, the yield rate of large-area preparation increases by 20%-30%, the batch consistency is good, and the cost is reduced. The device structure innovation makes the stress distribution more uniform and the power output increases significantly. The performance monitoring and control system corrects the deviation in real time, and the performance deviation of each batch is less than 3%. The composite system expands the application scenarios and has both stability and efficiency. In low temperature environment, the ethylene glycol additive ensures that the piezoelectric performance decay is less than 15%; the self-healing characteristics extend the life of the device; and miniaturization customization unlocks new fields such as implantable medical and micro-sensors. In wearable and IoT power supply applications, it effectively reduces the dependence on external power supply and greatly improves the equipment endurance and deployment flexibility. DETAILED DESCRIPTION

[0017] Example 1: Preparation of InGaN binary piezoelectric semiconductor alloy materials and performance testing of basic devices

[0018] Material design: Accurately weigh high-purity indium (In) and gallium (Ga) raw materials, mix them according to the ratio of 40% In content, and mix them with 0.1% mass fraction of tri(isopropyl) scandium (Sc(i-Pr)3). In the metal organic chemical vapor deposition (MOCVD) equipment, the flow ratio of trimethyl indium (TMIn), trimethyl gallium (TMGa), and ammonia (NH3) is set to 1:2.5:12, the reaction temperature is stabilized at 800℃, and a pulsed intake mode with a duty cycle of 30% is adopted. Under these conditions, the grown InGaN alloy film produces moderate strain on the lattice due to the reasonable proportion of In atoms. After testing, the piezoelectric coefficient is increased by 30% compared with the unoptimized InGaN. The doping of Sc(i-Pr)3 effectively adjusts the bandgap width and increases the carrier mobility by about 40%.

[0019] Device structure: Flexible polyimide (PI) is used as the substrate to prepare a cantilever beam array device. The cantilever beam length is set to 2 cm and the width is 0.2 cm. The prepared InGaN piezoelectric semiconductor film and metal electrode are deposited on its surface in sequence. This structural design allows the cantilever beam to be evenly stressed when the device is subjected to slight vibration, and the stress concentration problem is improved.

[0020] Efficiency comparison

[0021] A conventional InGaN-based piezoelectric semiconductor device with unoptimized components and processes was selected as a comparative sample. Under the same mechanical energy input of 10Hz vibration frequency and 50mN vibration amplitude, the device prepared in this embodiment has an open circuit voltage of 5V and a short circuit current of 100μA, while the conventional device has an open circuit voltage of only 3V and a short circuit current of 60μA, and the power output is increased by more than 60%.

[0022] Example 2: AlN / GaN / InN multilayer piezoelectric semiconductor heterojunction and flexible thin film stack device testing

[0023] Material design: AlN, GaN, and InN layers are grown sequentially by MOCVD, with the thickness of the AlN layer strictly controlled to be 15nm, the GaN layer to be 40nm, and the InN layer to be 30nm. The lattice mismatch between different materials is precisely constructed to enhance the piezoelectric effect. Tests show that the piezoelectric coefficient is increased by an average of 25% compared to single-layer materials. The difference in energy bands of each layer promotes rapid separation of carriers at the interface, reduces recombination losses, and extends the carrier lifetime by about 35%.

[0024] Device structure: A flexible thin film stacked device is constructed, with the above-mentioned multi-layer piezoelectric semiconductor layer, metal electrode layer and dielectric layer stacked in sequence on the PI substrate. The dielectric layer uses a material with a moderate dielectric constant to optimize charge storage and transmission, and the capacitance value is increased by 30% compared to the ordinary flat plate structure.

[0025] Efficiency comparison

[0026] Compared with a single-layer InN piezoelectric semiconductor flexible device of the same size, in a random vibration environment simulating daily human movement, the average energy collection efficiency of the device in this embodiment is improved by 70%. After 100 charge and discharge cycles, the capacitance retention rate is 95%, while that of the comparison device is only 70%.

[0027] Example 3: Testing the impact of manufacturing process optimization on device consistency

[0028] Process improvement: The InGaN alloy preparation in Example 1 was repeated, but this time the fine-tuning range of the MOCVD process parameters was optimized, and the gas flow ratio and temperature fluctuation range were controlled within ±2%. At the same time, during the transfer printing of multi-layer heterojunction assembly, the contact pressure fluctuation between the PDMS stamp and the substrate was precisely controlled within ±0.1N, and the contact time error was controlled within ±1s.

[0029] Performance improvement: A batch of 10 cantilever beam array devices were prepared. After testing, the piezoelectric coefficient deviation of each device was less than 2%, and the open-circuit voltage deviation was less than 3%. The device consistency was greatly improved, solving the problem of uneven performance of products in the same batch due to process fluctuations under traditional processes.

[0030] Efficiency comparison

[0031] In the past, 10 similar devices from the same batch prepared using traditional processes had a piezoelectric coefficient deviation of up to 10%, an open-circuit voltage deviation of 15%, and a yield rate of only 60%. After the optimized process this time, the yield rate was increased to 90%.

[0032] Example 4: Study on the performance of composite piezoelectric system

[0033] Composite system construction: InGaN and ZnO are compounded in a ratio of 2:1 by coprecipitation. The high chemical stability of ZnO inhibits the generation of impurities and grain boundary corrosion in the composite system, improving the overall material stability. After compounding, the piezoelectric coefficient is increased by an additional 15% under low-frequency vibration (1-10Hz) compared to a single InGaN system.

[0034] Performance synergy: The surface electrical properties of ZnO are utilized to optimize the carrier transmission path, and the carrier mobility in the composite system increases by 10%, realizing the complementary advantages of the two materials.

[0035] Efficiency comparison

[0036] Compared with pure InGaN piezoelectric semiconductor energy harvesting devices, in low-frequency vibration scenarios simulating industrial environments, the total energy collection of composite system devices increased by 40%, and the performance retention rate increased from 80% to 92% after 1,000 hours of operation.

[0037] Example 5: Low temperature adaptability and self-healing properties test

[0038] Low temperature guarantee: When synthesizing InGaN alloy materials, an organic additive containing ethylene glycol was added at a mass fraction of 8%. After a low temperature box simulated -30°C environmental test, the piezoelectric coefficient decayed by only 10%, while the control group without the additive decayed by 30%. The additive effectively relieved the lattice stress of the material at low temperatures.

[0039] Self-healing verification: 0.8% of organic small molecules containing disulfide bonds were incorporated into the piezoelectric semiconductor material of the prepared cantilever beam device. After artificially creating microcracks, the device was subjected to a 50°C thermal stimulus for 30 minutes. SEM observations showed that the microcracks were obviously healed, and the piezoelectric performance of the device was restored to 90% of the initial value, maintaining the integrity and performance of the device.

[0040] Efficiency comparison

[0041] Traditional devices without low-temperature protection and self-repair design will lose more than 50% of their performance after multiple vibration tests at -30°C, and their performance will continue to deteriorate until failure after microcracks appear. However, the device in this embodiment can withstand low-temperature tests and crack repair multiple times and continue to work stably.

[0042] Example 6: Performance test in actual application scenarios

[0043] Wearable applications: The cantilever beam array piezoelectric semiconductor energy harvesting device is integrated into the smart bracelet prototype, and the mechanical design is optimized to fit the human wrist movement, ensuring that daily wrist swings and arm waving movements can be efficiently converted into electrical energy. The bracelet has a built-in heart rate monitoring module and a Bluetooth communication module. After human wear tests, the power collected from one hour of exercise can provide the module with continuous operation for 30 minutes, achieving partial self-powering.

[0044] IoT applications: Flexible thin-film laminated devices are installed on wireless sensor nodes of the Industrial IoT. The continuous vibration of machine operation is used to collect an average of 60% of the energy consumption of sensor data collection and short-distance transmission per day, reducing dependence on external power supply and lowering operation and maintenance costs.

[0045] Efficiency comparison

[0046] Smart bracelets that do not use the device of the present invention need to be charged once a week; after using it, the battery life is extended by 3 days. IoT sensors originally needed to replace batteries once a month, but after using the device of the present invention, the battery replacement cycle was extended to 3 months.

[0047] The present invention carries out all-round innovation from five core dimensions: piezoelectric semiconductor material design, device structure innovation, preparation process improvement, performance monitoring and regulation, and application expansion.

[0048] (I) Design of piezoelectric semiconductor materials

[0049] New binary piezoelectric semiconductor alloy: Carefully design a binary piezoelectric semiconductor alloy system based on indium gallium nitride (InGaN), and precisely control the atomic ratio of indium (In) and gallium (Ga) to vary the In content between 30% and 50%. The larger atomic radius of In atoms is used to produce moderate strain on the crystal lattice, thereby optimizing the piezoelectric coefficient. At the same time, the scandium-containing organic compound tri(isopropyl) scandium (Sc(i-Pr)3) is doped in an amount of 0.05%-0.15% of the total mass. With the help of the 4f electronic structure of scandium, the bandgap width and carrier concentration of the material are adjusted, the carrier mobility is improved, and the foundation for efficient energy conversion is laid.

[0050] Multilayer piezoelectric semiconductor heterojunction: Construct AlN / GaN / InN multilayer piezoelectric semiconductor heterojunction. Accurately control the thickness of each layer, AlN layer thickness 10-20nm, GaN layer thickness 30-50nm, InN layer thickness 20-40nm. Utilize the lattice mismatch and energy band difference between different materials to enhance the piezoelectric effect, while promoting efficient separation and transmission of carriers at the interface and reducing recombination losses.

[0051] (II) Device structure innovation

[0052] Cantilever beam array structure: Design a cantilever beam array piezoelectric semiconductor energy harvesting device. Each cantilever beam unit is composed of a piezoelectric semiconductor film, a metal electrode and a flexible substrate. The cantilever beam is 1-3 cm long and 0.1-0.3 cm wide. Multiple cantilever beams are arranged in parallel into an array. When subjected to external mechanical vibration, the cantilever beams vibrate in coordination, greatly improving the uniformity of stress distribution, enhancing the piezoelectric response, and thus increasing the power output.

[0053] Flexible thin film stacking structure: Create a flexible thin film stacking piezoelectric semiconductor energy harvesting device. Using polyimide (PI) as a flexible substrate, stack the piezoelectric semiconductor layer, metal electrode layer and dielectric layer in sequence, and optimize the thickness of each layer. This stacking structure not only gives the device excellent flexibility, but also enhances the charge collection and storage capabilities through interlayer interactions, adapting to the needs of wearable devices.

[0054] (III) Improvement of preparation process

[0055] Metal organic chemical vapor deposition (MOCVD) optimization: For the preparation of piezoelectric semiconductor materials such as InGaN, the MOCVD process is improved. The reaction gas flow rate is precisely controlled, such as maintaining the flow ratio of trimethyl indium (TMIn), trimethyl gallium (TMGa), and ammonia (NH3) at 1:2:10-1:3:15; the reaction temperature is set at 700-900℃, and a pulsed gas intake mode is used with a duty cycle of 20%-40% to improve the material crystallinity and composition uniformity.

[0056] Innovation of transfer printing technology: Innovative transfer printing technology is used for the preparation of multi-layer heterojunction and flexible devices. Silicon-containing organic compound polydimethylsiloxane (PDMS) is selected as the stamp material. By precisely controlling the contact pressure and time between the stamp and the substrate, high-precision transfer of ultra-thin piezoelectric semiconductor layers and electrode layers is achieved, reducing material damage and interface contamination, and ensuring device performance.

[0057] (IV) Performance monitoring and control

[0058] In-situ piezoelectric and electrical performance monitoring: Build an in-situ piezoelectric coefficient, open circuit voltage, and short circuit current joint test system. Real-time tracking of key performance indicators of materials at various stages of growth and device assembly. Once the piezoelectric coefficient fluctuates by more than 5%, or the open circuit voltage changes by more than 10%, the system automatically adjusts subsequent process parameters, such as fine-tuning the doping amount, changing the gas flow ratio, etc.

[0059] Online observation of microstructure: An online monitoring system using a scanning electron microscope (SEM) and a transmission electron microscope (TEM). SEM captures the surface morphology and pore conditions of the material; TEM analyzes the internal structure of the grains and the quality of the heterojunction interface. If abnormal grain growth or increased interface defects are found, the preparation process will be adjusted in a timely manner.

[0060] (V) Application expansion

[0061] Powering wearable health monitoring devices: Based on new piezoelectric semiconductor energy harvesting devices, we develop solutions to power wearable health monitoring devices (such as smart bracelets, smart patches, etc.). The mechanical energy generated by daily human movements, such as walking and arm swinging, is converted into electrical energy to continuously power the heart rate and blood pressure monitoring modules, as well as the wireless communication modules, thus extending the battery life of the device.

[0062] Powering IoT wireless sensor nodes: Integrate piezoelectric semiconductor energy harvesting devices into IoT wireless sensor nodes. In industrial environments, mechanical energy such as machine vibration and fluid impact can be used to supplement the power required for sensors to collect and transmit data, reducing dependence on external power supplies and improving system stability and deployment flexibility.

[0063] (VI) Expansion of composite piezoelectric systems

[0064] Explore the combination of different types of piezoelectric semiconductor materials, such as combining InGaN and ZnO piezoelectric semiconductors through co-precipitation or physical mixing. Accurately control the composite ratio between 1:1-3:1, and develop a new composite piezoelectric system with high stability and high energy conversion efficiency by leveraging the high chemical stability of ZnO and the excellent electrical properties of InGaN, and expand its application under complex working conditions.

[0065] (VII) Intelligent process planning

[0066] Develop intelligent process planning software by inputting key parameters such as target piezoelectric coefficient, carrier mobility, and cost budget. The software automatically generates a detailed process flow covering material formulation, process route, and parameter setting. Combined with machine learning, continuous iterative optimization can steadily improve the yield and preparation efficiency of piezoelectric semiconductor energy harvesting devices.

[0067] (VIII) Improved low temperature adaptability

[0068] During the material synthesis, an organic additive containing ethylene glycol is added, accounting for 5%-10% of the total raw material mass. The oxygen element in ethylene glycol helps to relieve the lattice stress of the material at low temperatures. Combined with the optimized preparation process, it ensures that the piezoelectric performance of the piezoelectric semiconductor energy harvesting device decays by less than 15% in a low temperature environment of -30°C.

[0069] (IX) Introduction of self-healing features

[0070] Organic small molecules containing disulfide bonds are incorporated into piezoelectric semiconductor materials, accounting for 0.5%-1% of the material mass. When microcracks appear inside the material due to stress, the disulfide bonds break and reconnect under heat or light stimulation, repairing the microcracks and maintaining device performance.

[0071] (10) Micro-customization

[0072] Based on the micro-electromechanical system (MEMS) technology, the mold and process parameters are precisely controlled to achieve customized production of miniature piezoelectric semiconductor energy harvesting devices to meet the stringent requirements of implantable medical devices, miniature sensors, etc. for tiny energy harvesting devices.

Claims

1. A piezoelectric semiconductor energy harvesting device, characterized in that: include: Piezoelectric semiconductor material, wherein the piezoelectric semiconductor material is a binary piezoelectric semiconductor alloy based on indium gallium nitride (InGaN), wherein the indium (In) content is between 30% and 50%, or an AlN / GaN / InN multilayer piezoelectric semiconductor heterojunction, wherein the AlN layer is 10-20nm thick, the GaN layer is 30-50nm thick, and the InN layer is 20-40nm thick; The device structure is a cantilever beam array type, each cantilever beam unit is composed of a piezoelectric semiconductor film, a metal electrode and a flexible substrate, the cantilever beam length is 1-3cm, and the width is 0.1-0.3cm; or a flexible film stack type, using polyimide (PI) as a flexible substrate, and stacking a piezoelectric semiconductor layer, a metal electrode layer and a dielectric layer in sequence.

2. The piezoelectric semiconductor energy harvesting device according to claim 1, characterized in that: The InGaN binary piezoelectric semiconductor alloy is prepared by a metal organic chemical vapor deposition (MOCVD) process. In the reaction gas flow, the flow ratio of trimethyl indium (TMIn), trimethyl gallium (TMGa), and ammonia (NH3) is maintained at 1:2:10-1:3:15, the reaction temperature is set at 700-900°C, and a pulsed air intake mode is adopted with a duty cycle of 20%-40%.

3. The piezoelectric semiconductor energy harvesting device according to claim 1, characterized in that: It is also doped with tri(isopropyl) scandium (Sc(i-Pr)3), an organic compound containing scandium, which accounts for 0.05%-0.15% of the total mass. The multilayer piezoelectric semiconductor heterojunction is assembled by transfer printing technology, and polydimethylsiloxane (PDMS), an organic compound containing silicon, is selected as the seal material to accurately control the contact pressure and time between the seal and the substrate.

4. The piezoelectric semiconductor energy harvesting device according to claim 1, characterized in that: It also includes an in-situ piezoelectric and electrical performance monitoring system that can track the piezoelectric coefficient of the material at each stage of growth and device assembly in real time. Open circuit voltage, short circuit current, when the piezoelectric coefficient fluctuates by more than 5%, or the open circuit voltage changes by more than 10%, the subsequent process parameters are automatically adjusted.

5. The piezoelectric semiconductor energy harvesting device according to claim 1, characterized in that: It is also equipped with an online microstructure observation system, which uses a scanning electron microscope (SEM) in conjunction with a transmission electron microscope (TEM). The SEM captures the surface morphology and pore conditions of the material, and the TEM analyzes the internal structure of the grains and the quality of the heterojunction interface, so as to adjust the preparation process in a timely manner.

6. The piezoelectric semiconductor energy harvesting device according to claim 1 is used to power wearable health monitoring equipment, which uses the mechanical energy of daily human movement to convert into electrical energy to continuously power the heart rate and blood pressure monitoring modules and wireless communication modules.

7. The piezoelectric semiconductor energy harvesting device according to claim 1 is used to power wireless sensor nodes in the Internet of Things, and uses the mechanical energy of machine vibration and fluid impact in industrial environments to supplement electrical energy.

8. A composite piezoelectric system, characterized in that: Comprising the piezoelectric semiconductor material of claim 1, wherein InGaN and ZnO piezoelectric semiconductors are compounded by co-precipitation or physical mixing, and the compounding ratio is between 1:1-3:

1.

9. The piezoelectric semiconductor energy harvesting device according to claim 1, characterized in that: During the material synthesis, an organic additive containing ethylene glycol is added at a weight percentage of 5% to 10% of the total raw material weight to ensure that the piezoelectric performance degradation rate is less than 15% in a low temperature environment of -30°C.

10. The piezoelectric semiconductor energy harvesting device according to claim 1, characterized in that: The piezoelectric semiconductor material incorporates 0.5%-1% of the material mass of organic small molecules containing disulfide bonds. When microcracks appear inside the material due to stress, the disulfide bonds break and reconnect under heat or light stimulation, repairing the microcracks and maintaining device performance.