Semiconductor device and method for manufacturing semiconductor device

Abstract

The semiconductor device includes: a semiconductor circuit portion; a first conductive member that is electrically connected to the semiconductor circuit unit; a second conductive member that is electrically connected to the semiconductor circuit unit; an insulating member in contact with the first conductive member and the second conductive member; and a sealing resin that covers the semiconductor circuit part, the first conductive member, the second conductive member, and a part of the insulating member. The first conductive member and the second conductive member are fixed by the insulating member.

Description

Technical Field

[0001] The present disclosure relates to a semiconductor device and a method for manufacturing the semiconductor device. Background Art

[0002] In the past, a semiconductor device that covers a semiconductor element such as a diode or a transistor with a resin package is known (for example, Patent Document 1). The semiconductor device described in Patent Document 1 includes first to third lead frames, a power semiconductor chip, a first internal lead, a second internal lead, and a molded resin. The power semiconductor chip includes a first power semiconductor chip bonded to the first lead frame and a second power semiconductor chip bonded to the second lead frame. The first and second power semiconductor chips each have a function of a switching element. The first internal lead connects the first power semiconductor chip to the second lead frame. The second internal lead connects the second power semiconductor chip to the third lead frame. In the manufacturing process of such a semiconductor device, the two internal leads are configured independently.

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application Publication No. 2021-166215 Summary of the invention

[0006] Problems to be solved by the invention

[0007] In the semiconductor device described in Patent Document 1, two inner leads need to be arranged independently. That is, it is difficult to arrange the two inner leads together. Therefore, in the conventional semiconductor device, there is still room for improvement in terms of improving production efficiency.

[0008] One object of the present disclosure is to provide a semiconductor device and a method for manufacturing a semiconductor device that are improved over existing devices. In particular, in view of the above circumstances, one object of the present disclosure is to provide a semiconductor device and a method for manufacturing a semiconductor device that achieve improved production efficiency.

[0009] Solutions to Solve Problems

[0010] A semiconductor device provided by a first aspect of the present disclosure includes: a semiconductor circuit portion; a first conductive component that is conductively connected to the semiconductor circuit portion; a second conductive component that is conductively connected to the semiconductor circuit portion; an insulating component that is in contact with the first conductive component and the second conductive component; and a sealing resin that covers the semiconductor circuit portion, the first conductive component, the second conductive component, and a portion of the insulating component. The first conductive component and the second conductive component are fixed by the insulating component.

[0011] The manufacturing method of a semiconductor device provided by the second scheme of the present invention includes: a process of preparing a lead frame including a first conductive component and a second conductive component; a process of fixing the first conductive component and the second conductive component with an insulating component in the state of the lead frame; a process of joining the first conductive component and the second conductive component to a semiconductor circuit part in a state fixed by the insulating component; and a process of forming a sealing resin covering the first conductive component, the second conductive component and the semiconductor circuit part.

[0012] Effects of the Invention

[0013] According to the above configuration, it is possible to improve production efficiency. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] Figure 1 It is a perspective view showing the semiconductor device according to the first embodiment.

[0015] Figure 2 It is a plan view showing the semiconductor device according to the first embodiment.

[0016] Figure 3 is Figure 2 The sealing resin is shown by imaginary lines in the top view.

[0017] Figure 4 Yes Figure 3 An enlarged partial view of a portion of the image.

[0018] Figure 5 It is a bottom view showing the semiconductor device according to the first embodiment.

[0019] Figure 6 It is a front view showing the semiconductor device according to the first embodiment.

[0020] Figure 7 It is a right side view showing the semiconductor device according to the first embodiment.

[0021] Figure 8 Yes Figure 7 A partially enlarged view of a portion of FIG. 1 is a view showing the sealing resin using imaginary lines.

[0022] Fig. 9 It is along Figure 3 A cross-sectional view taken along line IX-IX.

[0023] Fig.10 Yes Fig. 9 An enlarged partial view of a portion of the image.

[0024] Fig.11 Yes Fig. 9 An enlarged partial view of a portion of the image.

[0025] Fig.12 Yes Fig. 9 An enlarged partial view of a portion of the image.

[0026] Fig.13 It is along Figure 3 A cross-sectional view taken along line XIII-XIII.

[0027] Fig.14 Yes Fig.13 An enlarged partial view of a portion of the image.

[0028] Fig.15 It is along Figure 3 A cross-sectional view of line XV-XV.

[0029] Fig.16 It is along Figure 3 Cross-sectional view along line XVI-XVI.

[0030] Fig.17 It is a diagram showing a circuit configuration example of the semiconductor device according to the first embodiment.

[0031] Fig.18 It is a plan view showing one step of the method for manufacturing the semiconductor device according to the first embodiment.

[0032] Fig.19 It is a plan view showing one step of the method for manufacturing the semiconductor device according to the first embodiment.

[0033] Fig. 20 This is a cross-sectional view showing one step of the method for manufacturing the semiconductor device according to the first embodiment.

[0034] Fig.21 1 is a plan view showing a semiconductor device according to a first modification of the first embodiment, in which a sealing resin is shown by phantom lines.

[0035] Fig. 22 It is a diagram showing a circuit configuration example of a semiconductor device according to a first modification of the first embodiment.

[0036] Fig.23 1 is a plan view showing a semiconductor device according to a second modification of the first embodiment, in which a sealing resin is shown by phantom lines.

[0037] Fig.24 It is a diagram showing a circuit configuration example of a semiconductor device according to a second modification of the first embodiment.

[0038] Fig.25 1 is a plan view showing a semiconductor device according to a third modified example of the first embodiment, in which a sealing resin is shown by phantom lines.

[0039] Fig.26 It is a diagram showing a circuit configuration example of a semiconductor device according to a third modification example of the first embodiment.

[0040] Fig. 27 It is a plan view showing the semiconductor device according to the second embodiment, and is a diagram showing a sealing resin using phantom lines.

[0041] Fig.28 Yes Fig. 27 An enlarged partial view of a portion of the image.

[0042] Fig.29 It is along Fig. 27 Cross-sectional view of line XXIX-XXIX.

[0043] Fig.30 It is a diagram showing a circuit configuration example of a semiconductor device according to a second embodiment.

[0044] Fig.31 It is a plan view showing a semiconductor device according to a first modified example of the second embodiment, and is a diagram showing a sealing resin using phantom lines.

[0045] Fig.32 It is a plan view showing a semiconductor device according to a second modification of the second embodiment, and is a diagram showing a sealing resin using phantom lines.

[0046] Fig.33 It is a plan view showing a semiconductor device according to a third modified example of the second embodiment, and is a diagram showing a sealing resin using phantom lines.

[0047] Fig.34 is a cross-sectional view showing a semiconductor device according to a modified example, and Fig.13 The cross section corresponds to .

[0048] Fig.35 is a cross-sectional view showing a semiconductor device according to a modified example, and Fig.13 The cross section corresponds to .

[0049] Fig.36 It is an enlarged plan view showing a main part of a semiconductor device according to a modified example.

[0050] Fig.37 It is shown Fig.36 A cross-sectional view of a semiconductor device, and corresponds to Fig. 9 cross section.

[0051] Fig.38 It is an enlarged plan view showing a main part of a semiconductor device according to a modified example.

[0052] Fig.39 is a cross-sectional view showing a semiconductor device according to a modified example, and Fig.13 The cross section corresponds to .

[0053] Fig.40 It is an enlarged plan view showing a main part of a semiconductor device according to a modified example.

[0054] Fig.41 Yes means Fig.40 A front view of a semiconductor device is shown in FIG. 1 , in which a sealing resin is represented by imaginary lines. DETAILED DESCRIPTION

[0055] Hereinafter, preferred embodiments of the semiconductor device of the present disclosure will be described with reference to the accompanying drawings. Hereinafter, the same or similar components are marked with the same reference numerals, and repeated descriptions are omitted. The terms "first", "second", "third", etc. in the present disclosure are used only as labels, and are not necessarily intended to attach an order to these objects.

[0056] In the present disclosure, unless otherwise specified, “something A is formed on something B” and “something A is formed on (or on) something B” include “something A is directly formed on something B” and “something else is interposed between something A and something B and something A is formed on (or on) something B”. Similarly, “something A is configured on something B” and “something A is configured on (or on) something B” include “something A is directly configured on something B” and “something else is interposed between something A and something B, and something A is configured on something B”, unless otherwise specified. Similarly, “something A is located on (or on) something B” includes “something A is in contact with something B, something A is located on (or on) something B” and “something else is interposed between something A and something B and something A is located on (or on) something B”, unless otherwise specified. In addition, unless otherwise specified, "object A and object B overlap in a certain direction" includes "object A overlaps with object B in its entirety" and "object A overlaps with a portion of object B". In addition, "substance A (material) includes material C" includes "substance A (material) is composed of material C" and "substance A (material) is mainly composed of material C".

[0057] Figure 1 to Figure 17 The semiconductor device A10 of the first embodiment is shown. The semiconductor device A10 includes a first mounting portion 10A, a second mounting portion 10B, a plurality of terminal leads 13, a semiconductor circuit portion 20, two conductive components 31, 32, a plurality of conductive components 41A, 41B, 42A, 42B, a sealing resin 50, and an insulating component 60. The plurality of terminal leads 13 include a first terminal lead 14, a second terminal lead 15, a third terminal lead 16, a fourth terminal lead 171, a sixth terminal lead 172, a fifth terminal lead 181, and a seventh terminal lead 182. The semiconductor circuit portion 20 includes a first chip 21 and a second chip 22.

[0058] For ease of explanation, the thickness direction of the semiconductor device A10 is referred to as the "thickness direction z". In the following description, one side of the thickness direction z is sometimes referred to as the upper side, and the other side is referred to as the lower side. In addition, the descriptions of "upper", "lower", "above", "below", "upper surface" and "lower surface" indicate the relative positional relationship of various components in the thickness direction z, and are not necessarily terms that define the relationship with the direction of gravity. In addition, "viewed from above" refers to when observing in the thickness direction z. The direction orthogonal to the thickness direction z is referred to as the "first direction x". The direction orthogonal to the thickness direction z and the first direction x is referred to as the "second direction y".

[0059] The semiconductor device A10 converts the DC power supply voltage applied to the first terminal lead 14 and the second terminal lead 15 among the plurality of terminal leads 13 into an AC voltage through the semiconductor circuit unit 20 (the first chip 21 and the second chip 22). The converted AC voltage is input to a power supply object such as a motor from the third terminal lead 16 among the plurality of terminal leads 13. The semiconductor device A10 is used in a power conversion circuit such as an inverter.

[0060] like Figure 3 as well as Fig. 9 As shown, the first mounting portion 10A and the second mounting portion 10B are located at positions separated from each other in the first direction x. The first mounting portion 10A, the second mounting portion 10B and the plurality of terminal leads 13 are composed of the same lead frame. The lead frame is copper (Cu) or a copper alloy. Therefore, each component of the first mounting portion 10A, the second mounting portion 10B and the plurality of terminal leads 13 contains copper. The first mounting portion 10A and the second mounting portion 10B are each, for example, roughly rectangular in a plan view.

[0061] like Fig. 9 As shown, the first mounting part 10A and the second mounting part 10B have a main surface 101 and a back surface 102, respectively. Unless otherwise specified, the main surface 101 and the back surface 102 described below are common to the first mounting part 10A and the second mounting part 10B. The main surface 101 faces one side (upper) in the thickness direction z. The main surface 101 is covered with a sealing resin 50. A first chip 21 is mounted on the main surface 101 of the first mounting part 10A. The back surface 102 of the first mounting part 10A faces the side opposite to the side where the first chip 21 is located in the thickness direction z. A second chip 22 is mounted on the main surface 101 of the second mounting part 10B. The back surface 102 of the second mounting part 10B faces the side opposite to the side where the second chip 22 is located in the thickness direction z. The back surface 102 is exposed from the sealing resin 50. Tin (Sn) plating is applied to the back surface 102, for example.

[0062] like Figure 3 , Figure 5 as well as Figures 9 to 11 As shown, the sealing resin 50 covers the semiconductor circuit portion 20 (the first chip 21 and the second chip 22), the two conductive components 31, 32, and at least a portion of each of the first mounting portion 10A and the second mounting portion 10B. Furthermore, the sealing resin 50 covers a portion of each of the plurality of terminal leads 13 and the plurality of conductive components 41A, 41B, 42A, 42B. The sealing resin 50 has electrical insulation properties. The sealing resin 50 includes, for example, a black epoxy resin. Figure 2 As shown, the dimension L1 of the sealing resin 50 in the first direction x is longer than the dimension L2 of the sealing resin 50 in the second direction y. The sealing resin 50 has a resin main surface 51, a resin back surface 52, a pair of first side surfaces 53, a second side surface 54, a third side surface 55, a plurality of recesses 56, a groove 57, and a plurality of recesses 581, 582.

[0063] like Fig. 9 As shown in FIG. 1 , the resin main surface 51 faces the same side as the main surfaces 101 of the first mounting portion 10A and the second mounting portion 10B in the thickness direction z. Fig. 9 As shown in FIG. 5 , the resin back surface 52 faces the side opposite to the resin main surface 51 in the thickness direction z. Figure 5 As shown, the rear surfaces 102 of the first mounting portion 10A and the second mounting portion 10B are exposed from the resin rear surface 52 .

[0064] like Figure 2 , Figure 5 as well as Figure 6 As shown, the pair of first side surfaces 53 are located at positions separated from each other in the first direction x. The pair of first side surfaces 53 face the first direction x and extend along the second direction y. The pair of first side surfaces 53 are connected to the resin main surface 51 and the resin back surface 52.

[0065] like Figure 2 , Figure 5 as well as Figure 7 As shown, the second side surface 54 and the third side surface 55 are located at positions separated from each other in the second direction y. The second side surface 54 and the third side surface 55 face opposite sides in the second direction y and extend in the first direction x. The second side surface 54 and the third side surface 55 are connected to the resin main surface 51 and the resin back surface 52. Figure 6 As shown, a plurality of terminal leads 13 are exposed from the third side surface 55 .

[0066] like Figure 2 , Figure 5 as well as Figure 6As shown, a plurality of recesses 56 are recessed from the third side surface 55 toward the second direction y, and extend from the resin main surface 51 to the resin back surface 52 in the thickness direction z. In the first direction x, the plurality of recesses 56 are respectively located between the seventh terminal lead 182 and the third terminal lead 16, between the third terminal lead 16 and the first terminal lead 14, between the first terminal lead 14 and the second terminal lead 15, and between the second terminal lead 15 and the fifth terminal lead 181.

[0067] like Figure 5 , Figure 6 as well as Fig. 9 As shown, the groove 57 is recessed from the resin back surface 52 in the thickness direction z and extends along the second direction y. Both sides of the groove 57 in the second direction y are connected to the second side surface 54 and the third side surface 55. When viewed in the thickness direction z, the groove 57 divides the back surface 102 of the first mounting portion 10A and the back surface 102 of the second mounting portion 10B.

[0068] like Figure 1 , Figure 6 , Figure 7 as well as Fig. 9 As shown, the plurality of recesses 581 and 582 are respectively recessed from the resin main surface 51 in the thickness direction z. The top view shapes of the plurality of recesses 581 and 582 are not particularly limited, but are circular in the illustrated example. The plurality of recesses 581 each overlaps with the first mounting portion 10A when viewed from above. In the illustrated example, the plurality of recesses 581 are each individually located near the four corners of the first mounting portion 10A when viewed from above. The plurality of recesses 582 each overlaps with the second mounting portion 10B when viewed from above. In the illustrated example, the plurality of recesses 582 are each individually located near the four corners of the second mounting portion 10B when viewed from above. When manufacturing the semiconductor device A10, the plurality of recesses 581 are formed by a pin for fixing the first mounting portion 10A. The pin is pressed against the first mounting portion 10A at a stage before the sealing resin 50 is formed to fix the first mounting portion 10A. In this state, the sealing resin 50 is formed. Then, the pin is pulled out before the formation of the sealing resin 50 is completed. Thus, the sealing resin 50 is formed in at least a part of the region where the pins are arranged, so that the main surface 101 of the first mounting portion 10A is covered with the sealing resin 50. The plurality of recesses 581 are traces formed by the molding process of the sealing resin 50. The plurality of recesses 582 are also formed by the pins for fixing the second mounting portion 10B when the semiconductor device A10 is manufactured. The plurality of recesses 582 are traces formed by the molding process of the sealing resin 50.

[0069] like Figure 4 as well as Figure 5As shown, the first mounting portion 10A and the second mounting portion 10B have a first end face 111, a second end face 112, a third end face 113 and a fourth end face 114. The first end face 111, the second end face 112, the third end face 113 and the fourth end face 114 are covered by the sealing resin 50. The first end face 111 faces the first direction x and extends along the second direction y. The first end face 111 is located at a position closest to a pair of first side faces 53 of the sealing resin 50. The second end face 112 faces the second direction y and extends along the first direction x. The second end face 112 is located at a position closest to the second side face 54 of the sealing resin 50. The third end face 113 faces the side opposite to the second end face 112 in the second direction y and extends in the first direction x. The third end face 113 is located at a position closest to the third side face 55 of the sealing resin 50. The fourth end face 114 faces the side opposite to the first end face 111 in the first direction x and extends along the second direction y. As shown Fig. 9 As shown, the groove portion 57 is located between the fourth end surface 114 of the first mounting portion 10A and the fourth end surface 114 of the second mounting portion 10B.

[0070] like Figure 8 as well as Fig.13 As shown, a distance P2 between the third end surface 113 and the third side surface 55 is longer than a distance P1 between the second end surface 112 and the second side surface 54 .

[0071] like Fig.12 As shown, the second mounting portion 10B has a first seat surface 103 and a first rising surface 104. The first seat surface 103 faces the same side as the main surface 101 in the thickness direction z, and is located between the main surface 101 and the back surface 102 in the thickness direction z. The first seat surface 103 is connected to the fourth end surface 114. The first rising surface 104 faces a direction orthogonal to the thickness direction z, and is connected to the first seat surface 103 and the main surface 101. The first seat surface 103 and the first rising surface 104 form a step in the second mounting portion 10B.

[0072] The first chip 21 and the second chip 22 are transistors, for example. The transistors are, for example, any one of MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor), bipolar transistor and IGBT (Insulated Gate Bipolar Transistor). Fig.17As shown, the first chip 21 and the second chip 22 are RC-IGBTs with built-in reverse conducting diodes. In addition, the first chip 21 and the second chip 22 can also be IGBTs without built-in reverse conducting diodes. The first chip 21 and the second chip 22 each include a compound semiconductor substrate. The composition of the compound semiconductor substrate includes silicon (Si) or silicon carbide (SiC).

[0073] like Figure 3 , Figure 4 , Fig. 9 as well as Fig.10 As shown, the first chip 21 is mounted on the first mounting portion 10A. Preferably, when viewed from above, the center of gravity of the first chip 21 overlaps with the center of the first mounting portion 10A. The center of the first mounting portion 10A refers to an area corresponding to the center when the first mounting portion 10A is divided by Nx (Nx is a positive odd number) in the first direction x, and the center when the first mounting portion 10A is divided by Ny (Ny is a positive odd number) in the second direction y. Nx and Ny are not limited in any way, and are, for example, 3 or 5.

[0074] like Fig.10 As shown, the first chip 21 has a first main surface 21a and a first back surface 21b. The first main surface 21a and the first back surface 21b are separated from each other in the thickness direction z. The first main surface 21a faces the same direction as the main surface 101 of the first mounting portion 10A. The first back surface 21b faces the opposite side of the first main surface 21a in the thickness direction z, and is opposite to the main surface 101 of the first mounting portion 10A.

[0075] like Figure 4 as well as Fig.10 As shown, the first chip 21 has a first main surface electrode 211 , a plurality of main surface electrodes 212 , 214 , and a first back surface electrode 213 .

[0076] The first main surface electrode 211 is arranged on the first main surface 21a. A current corresponding to the power converted by the first chip 21 flows through the first main surface electrode 211. In the example where the first chip 21 is an IGBT, the first main surface electrode 211 is, for example, an emitter electrode, and in the example where the first chip 21 is a MOSFET, it is, for example, a source electrode. The first main surface electrode 211 includes a plurality of metal plating layers. The first main surface electrode 211 includes a nickel-plated (Ni) layer and a gold-plated (Au) layer stacked on the nickel-plated layer. In addition, the first main surface electrode 211 may also include a nickel-plated layer, a palladium (Pd) layer stacked on the nickel-plated layer, and a gold-plated layer stacked on the palladium-plated layer.

[0077] The main surface electrode 212 is arranged on the first main surface 21a. A first driving signal (gate voltage) for driving the first chip 21 is applied to the main surface electrode 212. In any example where the first chip 21 is an IGBT or a MOSFET, for example, the main surface electrode 212 is a gate electrode. When viewed from above, the area of ​​the main surface electrode 212 is smaller than the area of ​​the first main surface electrode 211.

[0078] A pair of main surface electrodes 214 are arranged on the first main surface 21a. The pair of main surface electrodes 214 are at the same potential as the first main surface electrode 211. The pair of main surface electrodes 214 are, for example, emitter sensing electrodes in the example where the first chip 21 is an IGBT, and are, for example, source sensing electrodes in the example where the first chip 21 is a MOSFET. The pair of main surface electrodes 214 are arranged on both sides of the second direction y across the main surface electrode 212 when viewed from above. In addition, the first chip 21 may have only one of the pair of main surface electrodes 214, or may not have either of the pair of main surface electrodes 214.

[0079] The first back surface electrode 213 is disposed on the first back surface 21b. The first back surface electrode 213 is disposed opposite to the main surface 101 of the first mounting portion 10A. A current corresponding to the power before conversion by the first chip 21 flows through the first back surface electrode 213. The first back surface electrode 213 is, for example, a collector electrode in an example in which the first chip 21 is an IGBT, and is, for example, a drain electrode in an example in which the first chip 21 is a MOSFET.

[0080] like Figure 3 , Figure 4 , Fig. 9 as well as Fig.11 As shown, the second chip 22 is mounted on the main surface 101 of the second mounting part 10B. Preferably, when viewed from above, the center of gravity of the second chip 22 overlaps with the center of the second mounting part 10B. The center of the second mounting part 10B refers to an area corresponding to the center when the second mounting part 10B is divided into Lx (Lx is a positive odd number) in the first direction x, and the center when the second mounting part 10B is divided into Ly (Ly is a positive odd number) in the second direction y. Lx and Ly are not limited in any way, and are, for example, 3 or 5.

[0081] like Fig.11 As shown, the second chip 22 has a second main surface 22a and a second back surface 22b. The second main surface 22a and the second back surface 22b are separated from each other in the thickness direction z. The second main surface 22a faces the same direction as the main surface 101 of the second mounting portion 10B. The second back surface 22b faces the opposite side of the second main surface 22a in the thickness direction z, and is opposite to the main surface 101 of the second mounting portion 10B.

[0082] like Figure 4 as well as Fig.11As shown, the second chip 22 has a second main surface electrode 221 , a plurality of main surface electrodes 222 , 224 , and a second back surface electrode 223 .

[0083] The second main surface electrode 221 is arranged on the second main surface 22a. A current corresponding to the power converted by the second chip 22 flows through the second main surface electrode 221. The second main surface electrode 221 is, for example, an emitter electrode in an example where the second chip 22 is an IGBT, and is, for example, a source electrode in an example where the second chip 22 is a MOSFET. The second main surface electrode 221 includes a plurality of metal plating layers in the same manner as the first main surface electrode 211. The second main surface electrode 221 includes a nickel (Ni) plating layer and a gold (Au) plating layer stacked on the nickel plating layer. In addition, the second main surface electrode 221 may also include a nickel plating layer, a palladium (Pd) plating layer stacked on the nickel plating layer, and a gold plating layer stacked on the palladium plating layer.

[0084] The main surface electrode 222 is arranged on the second main surface 22a. A second driving signal (gate voltage) for driving the second chip 22 is applied to the main surface electrode 222. The main surface electrode 222 is a gate electrode in any example of IGBT or MOSFET. When viewed from above, the area of ​​the main surface electrode 222 is smaller than the area of ​​the second main surface electrode 221.

[0085] A pair of main surface electrodes 224 are arranged on the second main surface 22a. The pair of main surface electrodes 224 are at the same potential as the second main surface electrode 221. The pair of main surface electrodes 224 are, for example, emitter sensing electrodes in the example where the second chip 22 is an IGBT, and are, for example, source sensing electrodes in the example where the second chip 22 is a MOSFET. The pair of main surface electrodes 224 are arranged on both sides of the second direction y across the main surface electrode 222 when viewed from above. In addition, the second chip 22 may have only one of the pair of main surface electrodes 224, or may not have either of the pair of main surface electrodes 224.

[0086] The second back electrode 223 is disposed on the second back surface 22b. The second back electrode 223 is disposed opposite to the main surface 101 of the second mounting portion 10B. A current corresponding to the power before conversion by the second chip 22 flows through the second back electrode 223. The second back electrode 223 is, for example, a collector electrode in an example where the second chip 22 is an IGBT, and is, for example, a drain electrode in an example where the second chip 22 is a MOSFET.

[0087] The semiconductor device A10 further includes two die bonding layers 231 and 232. The two die bonding layers 231 and 232 are respectively conductive. Each of the die bonding layers 231 and 232 is, for example, solder. Alternatively, each of the die bonding layers 231 and 232 may be a calcined metal.

[0088] like Fig. 9 as well as Fig.10 As shown, the die bonding layer 231 is interposed between the main surface 101 of the first mounting portion 10A and the first back electrode 213 of the first chip 21. The die bonding layer 231 bonds the main surface 101 of the first mounting portion 10A to the first back electrode 213 of the first chip 21. Thus, the first back electrode 213 of the first chip 21 is electrically connected to the first mounting portion 10A.

[0089] like Fig. 9 as well as Fig.11 As shown, the die bonding layer 232 is interposed between the main surface 101 of the second mounting portion 10B and the second back electrode 223 of the second chip 22. The die bonding layer 232 bonds the main surface 101 of the second mounting portion 10B to the second back electrode 223 of the second chip 22. Thus, the second back electrode 223 of the second chip 22 is electrically connected to the second mounting portion 10B.

[0090] Depend on Figure 3 as well as Figure 4 It can be seen that the plurality of terminal leads 13 are located on the side opposite to the side to which the second end surface 112 faces relative to the first mounting portion 10A and the second mounting portion 10B in the second direction y. At least any one of the plurality of terminal leads 13 is electrically connected to any one of the first chip 21 or the second chip 22. The plurality of terminal leads 13 are arranged along the first direction x. The plurality of terminal leads 13 include a first terminal lead 14, a second terminal lead 15, a third terminal lead 16, a fourth terminal lead 171, a fifth terminal lead 181, a sixth terminal lead 172, and a seventh terminal lead 182.

[0091] like Figure 3 As shown, the first terminal lead 14 is located away from the first mounting portion 10A and the second mounting portion 10B in the second direction y, and is located between the second terminal lead 15 and the third terminal lead 16 in the first direction x. The first terminal lead 14 extends along the second direction y. The first terminal lead 14 is electrically connected to the second main surface electrode 221 of the second chip 22. The first terminal lead 14 includes a covering portion 14A and an exposed portion 14B. Figure 3 As shown, the cover portion 14A is covered with a sealing resin 50. Figure 3 , Figure 5 as well as Figure 6 As shown, the exposed portion 14B is connected to the cover portion 14A and exposed from the third side surface 55 of the sealing resin 50. The exposed portion 14B extends away from the first mounting portion 10A and the second mounting portion 10B in the second direction y. The surface of the exposed portion 14B is plated with tin, for example.

[0092] like Fig.14As shown, the covering portion 14A of the first terminal lead 14 has a second seat surface 14C and a second rising surface 14D. The second seat surface 14C faces the same side as the main surfaces 101 of the first mounting portion 10A and the second mounting portion 10B in the thickness direction z, and is located at a position lower than the upper surface of the covering portion 14A (the surface facing the upper side in the thickness direction z) in the thickness direction z. The second rising surface 14D faces a direction orthogonal to the thickness direction z, and is connected to the second seat surface 14C and the upper surface of the covering portion 14A. The second seat surface 14C and the second rising surface 14D form a step on the covering portion 14A of the first terminal lead 14.

[0093] like Figure 3 As shown, the second terminal lead 15 includes a portion extending along the second direction y and is connected to the first mounting portion 10A. Therefore, the second terminal lead 15 is connected to the first back electrode 213 of the first chip 21 via the first mounting portion 10A. The second terminal lead 15 is a P terminal (positive electrode) to which a DC power supply voltage as a power conversion object is applied. The second terminal lead 15 includes a covering portion 15A and an exposed portion 15B. Figure 4 As shown in FIG. 1 , the cover portion 15A is connected to the third end surface 113 of the first mounting portion 10A and is covered by the sealing resin 50. When viewed in the first direction x, the cover portion 15A is curved. Figure 3 , Figure 5 as well as Figure 6 As shown, the exposed portion 15B is connected to the cover portion 15A and exposed from the third side surface 55 of the sealing resin 50. The exposed portion 15B extends toward a side away from the first mounting portion 10A in the second direction y. The surface of the exposed portion 15B is plated with tin, for example.

[0094] like Figure 3 As shown, the third terminal lead 16 includes a portion extending along the second direction y and is connected to the second mounting portion 10B. Therefore, the third terminal lead 16 is connected to the second back electrode 223 of the second chip 22 via the second mounting portion 10B. The AC power converted by the first chip 21 and the second chip 22 is output from the third terminal lead 16. The third terminal lead 16 includes a covering portion 16A and an exposed portion 16B. Figure 4 As shown, the cover portion 16A is connected to the third end surface 113 of the second mounting portion 10B and is covered by the sealing resin 50. When viewed in the first direction x, the cover portion 16A is bent in the same manner as the cover portion 15A of the second terminal lead 15. Figure 3 , Figure 5 as well as Figure 6 As shown, the exposed portion 16B is connected to the cover portion 16A and exposed from the third side surface 55 of the sealing resin 50. The exposed portion 16B extends toward a side away from the second mounting portion 10B in the second direction y. The surface of the exposed portion 16B is plated with tin, for example.

[0095] like Figure 3 As shown, the fourth terminal lead 171 is located away from the first mounting portion 10A in the second direction y and is located on one side of the first direction x. Figure 3 As shown, the sixth terminal lead 172 is located away from the second mounting portion 10B in the second direction y and is located on the other side of the first direction x. The fourth terminal lead 171 is connected to the main surface electrode 212 (gate electrode) of the first chip 21. A driving signal (gate voltage) for driving the first chip 21 is applied to the fourth terminal lead 171. The sixth terminal lead 172 is connected to the main surface electrode 222 (gate electrode) of the second chip 22. A driving signal (gate voltage) for driving the second chip 22 is applied to the sixth terminal lead 172.

[0096] like Figure 3 As shown in FIG. 1 , the fourth terminal lead 171 includes a covering portion 171A and an exposed portion 171B. The covering portion 171A is covered by the sealing resin 50. Figure 3 , Figure 5 as well as Figure 6 As shown, the exposed portion 171B is connected to the cover portion 171A and exposed from the third side surface 55 of the sealing resin 50. The exposed portion 171B extends toward a side away from the first mounting portion 10A in the second direction y. The surface of the exposed portion 171B is plated with tin, for example.

[0097] like Figure 3 As shown, the sixth terminal lead 172 includes a covering portion 172A and an exposed portion 172B. The covering portion 172A is covered by the sealing resin 50. Figure 3 , Figure 5 as well as Figure 6 As shown, the exposed portion 172B is connected to the cover portion 172A and is exposed from the sealing resin 50. The exposed portion 172B extends toward a side away from the second mounting portion 10B in the second direction y. The surface of the exposed portion 172B is plated with tin, for example.

[0098] like Figure 3 As shown, the fifth terminal lead 181 is located away from the first mounting portion 10A in the second direction y, and is located between the second terminal lead 15 and the fourth terminal lead 171 in the first direction x. Figure 3As shown, the seventh terminal lead 182 is located away from the second mounting portion 10B in the second direction y, and is located between the third terminal lead 16 and the sixth terminal lead 172 in the first direction x. The fifth terminal lead 181 is connected to the main surface electrode 214 (emitter sensing electrode) of the first chip 21. A voltage corresponding to the current flowing through the main surface electrode 214 (first main surface electrode 211) of the first chip 21 is applied to the fifth terminal lead 181. The seventh terminal lead 182 is connected to the second main surface electrode 221 (emitter sensing electrode) of the second chip 22. A voltage corresponding to the current flowing through the main surface electrode 224 (second main surface electrode 221) of the second chip 22 is applied to the seventh terminal lead 182.

[0099] like Figure 3 As shown, the fifth terminal lead 181 includes a covering portion 181A and an exposed portion 181B. The covering portion 181A is covered by the sealing resin 50. Figure 3 , Figure 5 as well as Figure 6 As shown, the exposed portion 181B is connected to the cover portion 181A and exposed from the third side surface 55 of the sealing resin 50. The exposed portion 181B extends toward a side away from the first mounting portion 10A in the second direction y. The surface of the exposed portion 181B is plated with tin, for example.

[0100] like Figure 3 As shown, the seventh terminal lead 182 includes a covering portion 182A and an exposed portion 182B. The covering portion 182A is covered by the sealing resin 50. Figure 3 , Figure 5 as well as Figure 6 As shown, the exposed portion 182B is connected to the cover portion 182A and exposed from the third side surface 55 of the sealing resin 50. The exposed portion 182B extends toward a side away from the second mounting portion 10B in the second direction y. The surface of the exposed portion 182B is plated with tin, for example.

[0101] like Figure 6 As shown, in the semiconductor device A10, the heights h of the exposed portion 14B of the first terminal lead 14, the exposed portion 15B of the second terminal lead 15, and the exposed portion 16B of the third terminal lead 16 are all the same (or substantially the same). In addition, their thicknesses are all the same (or substantially the same). Therefore, when viewed in the first direction x, at least a portion (exposed portion 14B) of the first terminal lead 14 overlaps with the second terminal lead 15 and the third terminal lead 16, respectively (see FIG. 1 ). Figure 7 ).

[0102] The conductive component 31 is electrically connected to the semiconductor circuit unit 20 (first chip 21). The conductive component 31 is an example of the "first conductive component" described in the claims. Figure 3As shown, the conductive component 31 is bonded to the first main surface electrode 211 of the first chip 21 and the second mounting portion 10B. As a result, the first main surface electrode 211 is electrically connected to the second mounting portion 10B and the second back surface electrode 223 of the second chip 22. The conductive component 31 is composed of copper. In the semiconductor device A10, the conductive component 31 is a metal clip. The conductive component 31 has a first main body portion 311, a plurality of first bonding portions 312, a second bonding portion 313, a plurality of first connecting portions 314, and a second connecting portion 315.

[0103] like Figure 3 as well as Figure 4 As shown, the first main body 311 constitutes a main part of the conductive component 31. The first main body 311 extends in the first direction x. In the example shown in the figure, the first main body 311 extends linearly between the first chip 21 and the second chip 22 in a plan view. Figure 8 As shown in FIG. 1 , the first main body portion 311 spans between the first mounting portion 10A and the second mounting portion 10B. The first main body portion 311 is located above the plurality of first bonding portions 312 and the second bonding portions 313 in the thickness direction z. Figure 4 As shown, the first body portion 311 includes two partition portions 311 a and 311 b.

[0104] like Figure 4 As shown, the partition 311a is connected to the plurality of first connecting portions 314 and the partition 311b. The end edge of the partition 311a connected to the plurality of first connecting portions 314 is divided into a plurality of branches. The partition 311b is connected to the partition 311a and the second connecting portion 315. The width of the partition 311b (the dimension in the second direction y) is smaller than the width of the partition 311a (the dimension in the second direction y). In this structure, as shown in FIG. Figure 4 As shown, the first main body portion 311 is L-shaped when viewed from above.

[0105] like Figure 3 , Figure 4 , Fig.11 as well as Fig.15 As shown, the plurality of first bonding portions 312 are bonded to the first main surface electrodes 211 of the first chip 21, respectively. Figure 3 , Figure 4 as well as Fig.15 As shown, the plurality of first joining portions 312 are located at mutually separated positions in the second direction y. The plurality of first joining portions 312 are arranged parallel to (or substantially parallel to) each other when viewed from above. The plurality of first joining portions 312 are respectively connected to the first main body portion 311 (dividing portion 311a) via a corresponding one of the plurality of first connecting portions 314. The plurality of first connecting portions 314 are connected to the first main body portion 311 and the plurality of first joining portions 312. Fig. 9As shown, each first connecting portion 314 is bent in the thickness direction z.

[0106] like Figure 3 , Fig. 9 as well as Fig.12 As shown, the second joint portion 313 is joined to the first seat surface 103 of the second mounting portion 10B. The second joint portion 313 extends in the second direction y. At least a portion of the second joint portion 313 is accommodated in an area defined by the first seat surface 103 and the first rising surface 104 of the second mounting portion 10B. The second joint portion 313 is connected to the first main body portion 311 (dividing portion 311b) via the second connecting portion 315. Fig. 9 As shown, the second connection portion 315 is bent in the thickness direction z. The second engagement portion 313 is located on the opposite side of the first engagement portion 312 across the first body portion 311 .

[0107] like Fig. 9 as well as Fig.11 As shown, the semiconductor device A10 further includes a first bonding layer 33. The first bonding layer 33 is interposed between the first main surface electrode 211 of the first chip 21 and each first bonding portion 312. The first bonding layer 33 bonds the first main surface electrode 211 and each first bonding portion 312. The first bonding layer 33 has conductivity. The first bonding layer 33 is, for example, solder. In addition, the first bonding layer 33 may also be a calcined metal.

[0108] The thickness t of each of the plurality of first bonding portions 312 (see Fig.10 ) is 0.1 mm or more and the maximum thickness Tmax of the first bonding layer 33 (refer to Fig.10 The maximum thickness Tmax of the first bonding layer 33 is greater than the thickness of the first chip 21 .

[0109] like Fig. 9 as well as Fig.12 As shown, the semiconductor device A10 further includes a second bonding layer 34. The second bonding layer 34 is interposed between the first seat surface 103 of the second mounting portion 10B and the second bonding portion 313. The second bonding layer 34 bonds the second mounting portion 10B to the second bonding portion 313. The second bonding layer 34 has electrical conductivity. The second bonding layer 34 is, for example, solder. In addition, the second bonding layer 34 may also be a calcined metal.

[0110] The conductive component 32 is electrically connected to the semiconductor circuit unit 20 (second chip 22). The conductive component 32 is an example of the "second conductive component" described in the claims. Figure 3As shown, the conductive component 32 is bonded to the second main surface electrode 221 of the second chip 22 and the cover portion 14A of the first terminal lead 14. As a result, the second main surface electrode 221 is electrically connected to the first terminal lead 14. The conductive component 32 is composed of copper. In the semiconductor device A10, the conductive component 32 is a metal clip. The conductive component 32 has a second main body portion 321, a third bonding portion 322, a plurality of fourth bonding portions 323, a third connecting portion 324, and a plurality of fourth connecting portions 325.

[0111] like Figure 3 as well as Figure 4 As shown, the second main body 321 constitutes the main part of the conductive component 32. When viewed from above, the second main body 321 is bent into a hook shape. When viewed from above, it overlaps with the second main body 321 and the main surface 101 of the second mounting part 10B. The second main body 321 is located above the third bonding part 322 and the plurality of fourth bonding parts 323 in the thickness direction z. Figure 4 As shown, the second body portion 321 includes a plurality of partition portions 321 a , 321 b , and 321 c .

[0112] like Figure 4 As shown, the dividing portion 321a is connected to the third connecting portion 324 and the dividing portion 321b. The dividing portion 321a extends from the third connecting portion 324 along the second direction y when viewed from above. The dividing portion 321b is connected to the two dividing portions 321a and 321c. The dividing portion 321b extends along the first direction x when viewed from above. In this embodiment, when the semiconductor device A10 is powered on, the directions of the currents flowing through the dividing portion 311b and the dividing portion 321b are opposite to each other. The dividing portion 321c is connected to the dividing portion 321b and the plurality of fourth connecting portions 325. The dividing portion 321c is in the shape of a strip with the second direction y as the length direction when viewed from above.

[0113] like Figure 3 , Figure 4 , Fig.13 as well as Fig.14 As shown, the third joint portion 322 is joined to the second seat surface 14C of the first terminal lead 14. The third joint portion 322 extends along the first direction x. At least a portion of the third joint portion 322 is accommodated in an area defined by the second seat surface 14C and the second rising surface 14D of the first terminal lead 14. The third joint portion 322 is connected to the second main body portion 321 (dividing portion 321a) via the third connecting portion 324. Fig.13 As shown, the third connection portion 324 is bent in the thickness direction z. The third joint portion 322 is located on the opposite side of the fourth joint portion 323 across the second body portion 321 .

[0114] like Figure 3 , Figure 4 , Fig. 9 , Fig.11 as well as Fig.16 As shown, the plurality of fourth bonding portions 323 are bonded to the second main surface electrodes 221 of the second chip 22, respectively. Figure 3 , Figure 4 as well as Fig.16 As shown, the plurality of fourth joints 323 are located at mutually separated positions in the second direction y. The plurality of fourth joints 323 are arranged parallel to each other (or substantially parallel to each other) when viewed from above. The plurality of fourth joints 323 are respectively connected to the second main body 321 (dividing portion 321c) via a corresponding one of the plurality of fourth connecting portions 325. The plurality of fourth connecting portions 325 are connected to the second main body 321 and the plurality of fourth joints 323. Fig. 9 As shown, each fourth connecting portion 325 is bent in the thickness direction z.

[0115] like Fig. 9 as well as Fig.14 As shown, the semiconductor device A10 further includes a third bonding layer 35. The third bonding layer 35 is interposed between the second seat surface 14C of the first terminal lead 14 and the third bonding portion 322. The third bonding layer 35 bonds the cover portion 14A of the first terminal lead 14 to the third bonding portion 322. The third bonding layer 35 has electrical conductivity. The third bonding layer 35 is, for example, solder. In addition, the third bonding layer 35 may also be a calcined metal.

[0116] like Fig. 9 , Fig.11 as well as Fig.16 As shown, the semiconductor device A10 further includes a fourth bonding layer 36. The fourth bonding layer 36 is interposed between the second main surface electrode 221 of the second chip 22 and the plurality of fourth bonding portions 323. The fourth bonding layer 36 bonds the second main surface electrode 221 of the second chip 22 and the plurality of fourth bonding portions 323. The fourth bonding layer 36 is conductive. The fourth bonding layer 36 is, for example, solder. In addition, the fourth bonding layer 36 may also be a calcined metal.

[0117] The thickness t of each of the plurality of fourth bonding portions 323 (see Fig.11 ) is 0.1 mm or more and the maximum thickness Tmax of the fourth bonding layer 36 (refer to Fig.11 The maximum thickness Tmax of the fourth bonding layer 36 is greater than the thickness of the second chip 22 .

[0118] The plurality of conductive parts 41A, 41B, 42A, 42B are, for example, bonding wires. The plurality of conductive parts 41A, 41B, 42A, 42B are each composed of gold. In addition, the plurality of conductive parts 41A, 41B, 42A, 42B may be composed of copper or aluminum (Al).

[0119] like Figure 3 as well as Figure 4 As shown, the conductive member 41A is bonded to the main surface electrode 212 of the first chip 21 and the cover portion 171A of the fourth terminal lead 171. As a result, the fourth terminal lead 171 is electrically connected to the main surface electrode 212 of the first chip 21. Figure 3 as well as Figure 4 As shown, the conductive member 41B is bonded to the main surface electrode 222 of the second chip 22 and the cover portion 172A of the sixth terminal lead 172 . Thus, the sixth terminal lead 172 and the main surface electrode 222 of the second chip 22 are electrically connected.

[0120] like Figure 3 as well as Figure 4 As shown, the conductive member 42A is bonded to one of the pair of main surface electrodes 214 of the first chip 21 and the covering portion 181A of the fifth terminal lead 181. Thus, the fifth terminal lead 181 is electrically connected to the main surface electrode 214 of the first chip 21. Figure 3 as well as Figure 4 As shown, the conductive member 42B is bonded to one of the pair of main surface electrodes 224 of the second chip 22 and the covering portion 182A of the seventh terminal lead 182 . Thus, the seventh terminal lead 182 and the main surface electrode 224 of the second chip 22 are electrically connected.

[0121] like Figure 3 , Figure 4 as well as Fig. 9 As shown, the insulating component 60 is connected to the two conductive components 31 and 32. The two conductive components 31 and 32 are fixed to each other by the insulating component 60. The insulating component 60 is covered with the sealing resin 50. The insulating component 60 includes, for example, the same resin material as the sealing resin 50. In addition, the insulating component 60 is not limited as long as it includes an insulating material. There is no limitation on the top view shape of the insulating component 60, but it is a rectangular shape in the example shown in the figure. The insulating component 60 is formed in a portion where the two conductive components 31 and 32 are close to each other when viewed from above. A portion of the conductive component 31 and a portion of the conductive component 32 are sandwiched by the insulating component 60 in the thickness direction z. The insulating component 60 is formed, for example, across the first main body 311 of the conductive component 31 and the second main body 321 of the conductive component 32 when viewed from above. In the present embodiment, as shown in FIG. Figure 3 as well as Fig. 9 As shown, the insulating member 60 is not in contact with the first connecting portion 314, the second connecting portion 315, the third connecting portion 324, and the fourth connecting portion 325. The insulating member 60 may be formed so long as it spans across the two conductive members 31 and 32, and is not limited to the size and shape shown in the figure.

[0122] like Fig.17As shown, in the semiconductor device A10 constructed as described above, the first main surface electrode 211 of the first chip 21 is electrically connected to the second back surface electrode 223 of the second chip 22. Therefore, the semiconductor device A10 forms a half-bridge circuit composed of two transistors (the first chip 21 and the second chip 22).

[0123] Next, refer to Figure 18 to Figure 20 An example of a method for manufacturing the semiconductor device A10 will be described. Fig.18 as well as Fig.19 It is a top view showing one step of a method for manufacturing the semiconductor device A10. Fig. 20 is a cross-sectional view showing one step of a method for manufacturing a semiconductor device A10, and Fig. 9 The cross section corresponds to .

[0124] First, prepare Fig.18 The lead frame 30 shown in FIG. 1 includes a frame portion 301 , a plurality of hanging portions 302 , and two conductive components 31 , 32 . The two conductive components 31 , 32 are supported on the frame portion 301 via some of the hanging portions 302 , respectively.

[0125] Then, if Fig.19 As shown, an insulating member 60 is formed on the lead frame 30. The insulating member 60 is formed so as to span the two conductive members 31 and 32. Thus, in the state of the lead frame 30, the two conductive members 31 and 32 are fixed by the insulating member 60. The insulating member 60 includes, for example, epoxy resin, and in this example, the insulating member 60 is formed by, for example, molding.

[0126] Next, the two conductive components 31 and 32 are separated from the frame 301. Fig.19 The cut line CL shown is cut. Thus, two conductive members 31 and 32 fixed by the insulating member 60 are formed.

[0127] Then, if Fig. 20 As shown in FIG. 1 , the two conductive components 31 and 32 are fixed by the insulating component 60 and bonded to the semiconductor circuit unit 20 (the first chip 21 and the second chip 22). Fig. 20 Before the process shown, a lead frame including a first mounting portion 10A, a second mounting portion 10B, and a plurality of terminal leads 13 is prepared in advance, and a first chip 21 and a second chip 22 are bonded to the first mounting portion 10A and the second mounting portion 10B, respectively. In the state of the lead frame, a plurality of terminal leads 13 are connected to each other. When bonding two conductive components 31 and 32, the conductive component 31 is bonded to the first chip 21 and the second mounting portion 10B, and the conductive component 32 is bonded to the second chip 22 and the first terminal lead 14.

[0128] Next, after forming the plurality of conducting members 41A, 41B, 42A, 42B, a sealing resin 50 is formed to cover the two conducting members 31, 32 and the insulating member 60. Then, the plurality of terminal leads 13 connected to each other are disconnected. Through the above steps, the semiconductor device A10 is manufactured.

[0129] The semiconductor device A10 and the method for manufacturing the same according to the first embodiment have the following functions and effects.

[0130] The semiconductor device A10 has an insulating member 60 connected to the two conducting members 31 and 32. The two conducting members 31 and 32 are fixed by the insulating member 60. In such a structure, in the manufacturing process of the semiconductor device A10, the two conducting members 31 and 32 can be fixed by the insulating member 60 and then joined to the semiconductor circuit unit 20 (the first chip 21 and the second chip 22). Therefore, the two conducting members 31 and 32 can be arranged together, so the semiconductor device A10 can improve production efficiency.

[0131] In addition, in the semiconductor device A10, the two conductive parts 31 and 32 are arranged on the basis of being fixed by the insulating part 60, so that the deviation of their relative positional relationship can be suppressed. Therefore, the semiconductor device A10 can suppress the two conductive parts 31 and 32 from contacting each other. Moreover, the deviation of the relative positional relationship can be suppressed, so the distance between the two conductive parts 31 and 32 can be reduced. Therefore, the mutual inductance generated by the current flowing through the conductive part 31 and the current flowing through the conductive part 32 can be increased, so the semiconductor device A10 can achieve a reduction in parasitic inductance. In addition, as described above, the distance between the two conductive parts 31 and 32 can be reduced, so the two conductive parts 31 and 32 can be enlarged respectively, so that the wiring resistance in the two conductive parts 31 and 32 can be reduced and the self-inductance can be reduced. Therefore, the semiconductor device A10 can achieve a reduction in parasitic inductance.

[0132] In the semiconductor device A10, the first bonding portion 312 of the conductive component 31 is bonded to the first main surface electrode 211 through the first bonding layer 33. The second bonding portion 313 of the conductive component 31 is bonded to the second mounting portion 10B through the second bonding layer 34. In addition, the third bonding portion 322 of the conductive component 32 is bonded to the first terminal lead 14 through the third bonding layer 35. The fourth bonding portion 323 of the conductive component 32 is bonded to the second main surface electrode 221 through the fourth bonding layer 36. The first bonding layer 33, the second bonding layer 34, the third bonding layer 35 and the fourth bonding layer 36 are, for example, solder. In this structure, when the first bonding layer 33, the second bonding layer 34, the third bonding layer 35 and the fourth bonding layer 36 are bonded, they are heated by reflow soldering, so if the two conductive components 31 and 32 are not fixed by the insulating component 60, the relative positional displacement of the two conductive components 31 and 32 is likely to occur. Therefore, in a structure where the first bonding layer 33, the second bonding layer 34, the third bonding layer 35, and the fourth bonding layer 36 need to be heated, fixing the two conductive components 31 and 32 by the insulating component 60 is effective in suppressing the relative positional deviation of the two conductive components 31 and 32. That is, it is effective in reducing the parasitic inductance of the semiconductor device A10. In addition, by reducing the parasitic inductance of the semiconductor device A10, the generation of surge voltage accompanying the switching action of the first chip 21 and the second chip 22 can be suppressed.

[0133] In the semiconductor device A10, the insulating member 60 is formed at the portion where the two conductive members 31 and 32 are close to each other. In this structure, an insulator can be arranged at the portion where the two conductive members 31 and 32 are close to each other, so that the insulation withstand voltage between the two conductive members 31 and 32 can be ensured.

[0134] In the semiconductor device A10, the insulating member 60 is made of the same resin material as the sealing resin 50. According to this structure, the insulation withstand voltage between the two conductive parts 31 and 32 can be made the same as the case where the sealing resin 50 is arranged between the two conductive parts 31 and 32. In addition, the difference in linear expansion coefficient between the insulating member 60 and the sealing resin 50 can be suppressed, so the thermal stress caused by the difference in these linear expansion coefficients can be suppressed.

[0135] In the semiconductor device A10, as Figure 3 As shown in FIG. 1 , the insulating member 60 is disposed substantially in the center of the entirety of the two conductive members 31 and 32 in a plan view. Fig.19After the cutting line CL in the semiconductor device A10 is cut, the two conductive components 31 and 32 are transported while being fixed by the insulating component 60. At this time, even if the insulating component 60 is sucked and the two conductive components 31 and 32 are transported, the two conductive components 31 and 32 can be prevented from being tilted in the semiconductor device A10. In addition, by sucking and transporting the insulating component 60, the component used for transport does not contact the two conductive components 31 and 32, so deformation of the two conductive components 31 and 32 can also be suppressed.

[0136] In the semiconductor device A10, the semiconductor circuit unit 20 includes a first chip 21 and a second chip 22. The first chip 21 and the second chip 22 are covered with a sealing resin 50. According to this structure, the two chips (the first chip 21 and the second chip 22) of the semiconductor device A10 are packaged at one time by a sealing resin 50. Therefore, the semiconductor device A10 can reduce the mounting area on the circuit substrate on which the semiconductor device A10 is mounted.

[0137] Other embodiments and modifications of the semiconductor device of the present disclosure are described below. The configurations of the various components in the embodiments and modifications can be combined with each other within the range that no technical contradiction occurs.

[0138] Fig.21 as well as Fig. 22 A semiconductor device A11 according to a first modification of the first embodiment is shown. The semiconductor device A11 is different from the semiconductor device A10 in the following respects: The first chip 21 of the semiconductor device A11 is not a transistor but a diode.

[0139] The first chip 21 of the semiconductor device A11 has a first main surface electrode 211 and a first back surface electrode 213. Fig.21 As shown in FIG. 1 , the first chip 21 of the semiconductor device A11 does not have the main surface electrodes 212 and 214. Fig. 22 As shown, the first chip 21 of the semiconductor device A11 is a diode, the first main surface electrode 211 is, for example, an anode electrode, and the first back surface electrode 213 is, for example, a cathode electrode.

[0140] like Fig.21 As shown, the semiconductor device A11 does not include any of the two conducting components 41A and 42A. Fig.21 as well as Fig. 22 As shown in FIG. 1 , the fourth terminal lead 171 and the fifth terminal lead 181 are not connected to the first chip 21 and the second chip 22, respectively. Therefore, in the semiconductor device A11, the fourth terminal lead 171 and the fifth terminal lead 181 are non-connection terminals. Fig.21In the example shown, the semiconductor device A11 includes the conductive component 42B. However, in a configuration different from this example, the semiconductor device A11 may not include the conductive component 42B.

[0141] like Fig. 22 As shown, the first main surface electrode 211 (anode electrode) of the first chip 21 and the second back surface electrode 223 (collector electrode) of the second chip 22 of the semiconductor device A11 are electrically connected. In the semiconductor device A11, the high voltage side is a diode and the low voltage side is a transistor with respect to the power supply voltage (DC voltage) applied between the first terminal lead 14 and the second terminal lead 15. The semiconductor device A11 is used as a boost type chopper circuit, for example.

[0142] Fig.23 as well as Fig.24 A semiconductor device A12 according to a second modification of the first embodiment is shown. The semiconductor device A12 is different from the semiconductor device A10 in the following respects: The second chip 22 of the semiconductor device A12 is not a transistor but a diode.

[0143] The second chip 22 of the semiconductor device A12 has a second main surface electrode 221 and a second back surface electrode 223. Fig.23 As shown in FIG. 1 , the second chip 22 of the semiconductor device A12 does not have the main surface electrodes 222 and 224. Fig.24 As shown, the second chip 22 of the semiconductor device A12 is a diode, the second main surface electrode 221 is, for example, an anode electrode, and the second back surface electrode 223 is, for example, a cathode electrode.

[0144] like Fig.23 As shown, the semiconductor device A12 does not include any of the two conducting components 41B and 42B. Fig.23 as well as Fig.24 As shown, the sixth terminal lead 172 and the seventh terminal lead 182 are not connected to the first chip 21 and the second chip 22. Therefore, in the semiconductor device A12, the sixth terminal lead 172 and the seventh terminal lead 182 are non-connection terminals. Fig.23 In the example shown, the semiconductor device A12 includes the conductive component 42A. However, in a configuration different from this example, the semiconductor device A12 may not include the conductive component 42A.

[0145] like Fig.24As shown, the first main surface electrode 211 (emitter electrode) of the first chip 21 and the second back surface electrode 223 (cathode electrode) of the second chip 22 of the semiconductor device A12 are electrically connected. In the semiconductor device A12, with respect to the DC voltage applied between the first terminal lead 14 and the second terminal lead 15, the high voltage side is a transistor and the low voltage side is a diode. The semiconductor device A12 is used as a step-down chopper circuit, for example.

[0146] Fig.25 and Fig.26 A semiconductor device A13 according to a third modification of the first embodiment is shown. The semiconductor device A13 is different from the semiconductor device A10 in the following respects: The first chip 21 and the second chip 22 of the semiconductor device A13 are not transistors but diodes.

[0147] The first chip 21 of the semiconductor device A13 has a first main surface electrode 211 and a first back surface electrode 213. Fig.25 As shown in FIG. 1 , the first chip 21 of the semiconductor device A13 does not have the main surface electrodes 212 and 214. Fig.26 As shown, the first chip 21 of the semiconductor device A13 is a diode, the first main surface electrode 211 is an anode electrode, and the first back surface electrode 213 is a cathode electrode. In addition, the second chip 22 of the semiconductor device A13 has a second main surface electrode 221 and a second back surface electrode 223. Fig.25 As shown in FIG. 1 , the second chip 22 of the semiconductor device A13 does not have the main surface electrodes 222 and 224. Fig.26 As shown, the second chip 22 of the semiconductor device A13 is a diode, the second main surface electrode 221 is an anode electrode, and the second back surface electrode 223 is a cathode electrode.

[0148] like Fig.25 As shown, the semiconductor device A13 does not include any of the plurality of conductive components 41A, 42A, 41B, 42B. Fig.24 as well as Fig.25 As shown, the fourth terminal lead 171, the fifth terminal lead 181, the sixth terminal lead 172, and the seventh terminal lead 182 are not connected to the first chip 21 and the second chip 22. Therefore, in the semiconductor device A13, the fourth terminal lead 171, the fifth terminal lead 181, the sixth terminal lead 172, and the seventh terminal lead 182 are non-connection terminals.

[0149] like Fig.26As shown, the first main surface electrode 211 (anode electrode) of the first chip 21 and the second back surface electrode 223 (cathode electrode) of the second chip 22 of the semiconductor device A13 are electrically connected. In the semiconductor device A13, both the high voltage side and the low voltage side are diodes with respect to the power supply voltage (DC voltage) applied between the first terminal lead 14 and the second terminal lead 15. The semiconductor device A13 is a bridge circuit of diodes.

[0150] In the semiconductor devices A11 to A13 of each modification of the first embodiment, the two conductive components 31 and 32 are fixed by the insulating component 60, similarly to the semiconductor device A10. Therefore, each semiconductor device A11 to A13 can configure the two conductive components 31 and 32 together, similarly to the semiconductor device A10, so that the production efficiency can be improved. In addition, each semiconductor device A11 to A13 has the same effect as the semiconductor device A10 by using the structure common to the semiconductor device A10. For example, each semiconductor device A11 to A13 can suppress the two conductive components 31 and 32 from contacting each other. In addition, each semiconductor device A11 to A13 can increase the mutual inductance generated by the current flowing through the conductive component 31 and the current flowing through the conductive component 32, so that the parasitic inductance can be reduced.

[0151] As can be seen from the above-mentioned semiconductor devices A10 to A13, the semiconductor device of the present invention can constitute four power conversion circuits (a bridge circuit composed of transistors, a step-up chopper circuit, a step-down chopper circuit, and a bridge circuit composed of diodes) by combining the first chip 21 and the second chip 22. On the other hand, the structures of each terminal lead 13 and the sealing resin 50 are common in each semiconductor device A10 to A13. Therefore, the semiconductor device of the present invention can constitute any one of the four power conversion circuits in the state where the package appearance is the same. In addition, in the semiconductor device of the present invention, even if the first chip 21 and the second chip 22 are different depending on whether they are transistors or diodes, the structures of each terminal lead 13 and the sealing resin 50 can be directly and flexibly utilized. Therefore, the semiconductor device of the present invention can make the packaging structure universal regardless of which of the above-mentioned four power conversion circuits it is, so it is preferred in terms of improving productivity.

[0152] As can be understood from the above-mentioned semiconductor devices A10 to A13, the semiconductor device of the present disclosure is configured so that the center of gravity of the first chip 21 overlaps with the center of the first mounting portion 10A when viewed from above. This structure is preferred in the commonality of the conductive component 31. Similarly, the semiconductor device of the present disclosure is configured so that the center of gravity of the second chip 22 overlaps with the center of the second mounting portion 10B when viewed from above. This structure is preferred in the commonality of the conductive component 32.

[0153] Figure 27 to Figure 302 shows a semiconductor device A20 according to a second embodiment. The semiconductor device A20 is different from the semiconductor device A10 in the following aspects. First, the plurality of conductive components 41A, 42A, 41B, and 42B are not bonding wires but conductive plate-like components. Second, the insulating component 60 is replaced with a first insulating component 61, a second insulating component 62, and a third insulating component 63. In addition, in the semiconductor device A20, as shown in FIG. Fig.30 As shown, the first chip 21 and the second chip 22 are MOSFETs respectively, but may be IGBTs (or RC-IGBTs) similarly to the semiconductor device A10.

[0154] Each component of the plurality of conductive components 41A, 42A, 41B, 42B includes copper or a copper alloy. Different from this example, each component of the plurality of conductive components 41A, 42A, 41B, 42B may also include other metal materials. The conductive component 41A is bonded to the main surface electrode 212 (first chip 21) and the cover 171A (fourth terminal lead 171) through a conductive bonding material. The conductive component 42A is bonded to the main surface electrode 214 (first chip 21) and the cover 181A (fifth terminal lead 181) through a conductive bonding material. The conductive component 41B is bonded to the main surface electrode 222 (second chip 22) and the cover 172A (sixth terminal lead 172) through a conductive bonding material. The conductive component 42B is bonded to the main surface electrode 224 (second chip 22) and the cover 182A (seventh terminal lead 182) through a conductive bonding material.

[0155] The first insulating member 61, the second insulating member 62, and the third insulating member 63 each include, for example, the same resin material as the sealing resin 50. Different from this example, the first insulating member 61, the second insulating member 62, and the third insulating member 63 may each be composed of another insulating material.

[0156] The first insulating member 61 is formed across the two conductive members 31 and 32 similarly to the insulating member 60 of the semiconductor device A10 to fix them.

[0157] The second insulating member 62 contacts the two conductive members 41A and 42A to fix them. Part of the conductive member 41A and part of the conductive member 42A are covered by the second insulating member 62 in the thickness direction z. The plan view shape of the second insulating member 62 is not limited in any way, but is a rectangular shape in the example shown in the figure.

[0158] The third insulating member 63 contacts the two conductive members 41B and 42B to fix them. Part of the conductive member 41B and part of the conductive member 42B are covered by the third insulating member 63 in the thickness direction z. The plan view shape of the third insulating member 63 is not limited in any way, but is a rectangular shape in the example shown in the figure.

[0159] In the semiconductor device A20, as Fig. 27 as well as Fig.28 As shown, the first joint portion 312 of the conductive component 31 includes two strip-shaped portions 312a. Fig. 27 as well as Fig.28 As shown, the two strip-shaped portions 312a are located at mutually separated positions in the second direction y. The two strip-shaped portions 312a are respectively in the first direction x as the length direction. The two strip-shaped portions 312a are arranged parallel to each other (or substantially parallel to each other) when viewed from above. Different from this example, the first joint portion 312 may not be separated into the two strip-shaped portions 312a.

[0160] In the semiconductor device A20, as Fig. 27 as well as Fig.28 As shown, the fourth joint portion 323 of the conductive component 32 includes two strip portions 323a. Fig. 27 as well as Fig.28 As shown, the two strip-shaped portions 323a are located at mutually separated positions in the second direction y. The two strip-shaped portions 323a respectively have the first direction x as the length direction. The two strip-shaped portions 323a are arranged parallel to each other (or substantially parallel) when viewed from above. Different from this example, the fourth joint portion 323 may not be separated into two strip-shaped portions 323a.

[0161] In the semiconductor device A20, the two conductive parts 41A and 42A are fixed by the second insulating part 62, and are bonded to the first chip 21 (the main surface electrode 212 and the main surface electrode 214), the cover 171A, and the cover 181A. The two conductive parts 41A and 42A are formed by the same lead frame, and when in the state of the lead frame, they are fixed by the second insulating part 62. Similarly, the two conductive parts 41B and 42B are fixed by the third insulating part 63, and are bonded to the second chip 22 (the main surface electrode 222 and the main surface electrode 224), the cover 172A, and the cover 182A. The two conductive parts 41B and 42B are formed by the same lead frame, and when in the state of the lead frame, they are fixed by the third insulating part 63.

[0162] In the semiconductor device A20, the two conductive parts 31 and 32 are fixed by the first insulating part 61. Therefore, the semiconductor device A20 can configure the two first conductive parts 31 and 32 together, so the semiconductor device A20 can improve the production efficiency. In addition, the semiconductor device A20, like the semiconductor device A10, can suppress the deviation of the relative positional relationship of the two conductive parts 31 and 32, so that they can be suppressed from contacting each other. In addition, the semiconductor device A20, like the semiconductor device A10, can increase the mutual inductance generated by the current flowing through the conductive part 31 and the current flowing through the conductive part 32, so the semiconductor device A20 can achieve a reduction in parasitic inductance. In addition, the semiconductor device A20 has the same effect as the semiconductor device A10 through the structure common to the semiconductor device A10.

[0163] In the semiconductor device A20, the two conducting components 41A and 42A are fixed by the second insulating component 62. In this structure, in the manufacturing process of the semiconductor device A20, it is possible to join the semiconductor circuit portion 20 on the basis of fixing the two conducting components 41A and 42A by the second insulating component 62. Therefore, the two conducting components 41A and 42A can be arranged together, so the semiconductor device A20 can improve the production efficiency. In addition, the two conducting components 41A and 42A are arranged on the basis of being fixed by the second insulating component 62, so the deviation of their relative positional relationship can be suppressed. As a result, the semiconductor device A20 can suppress the two conducting components 41A and 42A from contacting each other.

[0164] In the semiconductor device A20, the two conducting components 41B and 42B are fixed by the third insulating component 63. In this structure, in the manufacturing process of the semiconductor device A20, it is possible to join the semiconductor circuit portion 20 on the basis of fixing the two conducting components 41B and 42B by the third insulating component 63. Therefore, the two conducting components 41B and 42B can be arranged together, so the semiconductor device A20 can improve the production efficiency. In addition, the two conducting components 41B and 42B are arranged on the basis of being fixed by the third insulating component 63, so the deviation of their relative positional relationship can be suppressed. As a result, the semiconductor device A20 can suppress the two conducting components 41B and 42B from contacting each other.

[0165] In the above-mentioned second embodiment, the semiconductor device A20 includes the first insulating component 61, the second insulating component 62, and the third insulating component 63. In a structure different from this example, the semiconductor device A20 may also be a structure including one or two of the first insulating component 61, the second insulating component 62, and the third insulating component 63. For example, the semiconductor device A20 may also be a structure including only the second insulating component 62. In this case, the conductive component 41A is an example of the "first conductive component" described in the claims, and the conductive component 42A is an example of the "second conductive component" described in the claims.

[0166] Fig.31 FIG. 2 shows a semiconductor device A21 according to a first variation of the second embodiment. The semiconductor device A21 is similar to the semiconductor device A11, but the first chip 21 is not a transistor but a diode. Fig.31 As shown, the semiconductor device A21 does not include any of the two conductive components 41A and 42A, and does not include the second insulating component 62, compared with the semiconductor device A20.

[0167] Fig.32 FIG. 2 shows a semiconductor device A22 according to a second variation of the second embodiment. The semiconductor device A22 is similar to the semiconductor device A12, but the second chip 22 is not a transistor but a diode. Fig.32 As shown, the semiconductor device A22 does not include any of the two conductive components 41B and 42B, and does not include the third insulating component 63, compared with the semiconductor device A20.

[0168] Fig.33 FIG. 2 shows a semiconductor device A23 of a third modified example of the second embodiment. In the semiconductor device A23, similarly to the semiconductor device A13, the first chip 21 and the second chip 22 are not transistors but diodes. Fig.33 As shown, compared with the semiconductor device A20 , the semiconductor device A23 does not include any of the plurality of conductive components 41A, 42A, 41B, and 42B, and does not include any of the second insulating component 62 and the third insulating component 63 .

[0169] The semiconductor devices A21 to A23 of each modified example of the second embodiment are similar to the semiconductor device A20, and the two conductive components 31 and 32 are fixed by the first insulating component 61. Therefore, each semiconductor device A21 to A23 can be configured with two conductive components 31 and 32 as in the semiconductor device A20, so that the production efficiency can be improved. In addition, each semiconductor device A21 to A23 has the same effect as the semiconductor device A20 by using the common structure with the semiconductor device A20. For example, each semiconductor device A21 to A23 can suppress the two conductive components 31 and 32 from contacting each other. In addition, each semiconductor device A21 to A23 can increase the mutual inductance generated by the current flowing through the conductive component 31 and the current flowing through the conductive component 32, so that the parasitic inductance can be reduced.

[0170] The following description will describe other modified examples of semiconductor devices with reference to the drawings as appropriate. The modified examples described below can be applied to the semiconductor devices A10 to A13 and A20 to A23 described in the first embodiment and the second embodiment (including these modified examples) unless otherwise specified.

[0171] In a structure different from the semiconductor devices A10 to A13 and A20 to A23 of the first and second embodiments, the insulating member 60 (first insulating member 61) may not sandwich the conductive member 31 and the conductive member 32 in the thickness direction z. For example, Fig.34 FIG. 2 shows a configuration example in which the insulating member 60 is not formed below the conductive member 31 and the conductive member 32 in the thickness direction z in the semiconductor device A10. Fig.35 The following is a structural example in which the insulating component 60 is not formed above the conductive component 31 and the conductive component 32 in the thickness direction z in the semiconductor device A10. In such a modified example, the two conductive components 31 and 32 can be fixed by the insulating component 60 (first insulating component 61) and arranged together. However, the insulating component 60 (first insulating component 61) is configured to sandwich the conductive component 31 and the conductive component 32 in the thickness direction z, respectively, so that the two conductive components 31 and 32 can be firmly fixed. In addition, such a modified example can be applied not only to the insulating component 60 (first insulating component 61), but also to the second insulating component 62 and the third insulating component 63.

[0172] In a structure different from the semiconductor devices A10 to A13 and A20 to A23 of the first and second embodiments, the insulating member 60 (first insulating member 61) may be in contact with any one of the first connecting portion 314, the second connecting portion 315, the third connecting portion 324, and the fourth connecting portion 325. For example, Fig.36 as well as Fig.37The following is a structural example in which the insulating component 60 is connected to the second connecting portion 315 in the semiconductor device A10. In such a modified example, the two conductive components 31 and 32 can be fixed by the insulating component 60 (first insulating component 61) and arranged together. In addition, in this modified example, the formation range of the insulating component 60 becomes larger, so the two conductive components 31 and 32 can be fixed more firmly by the insulating component 60.

[0173] In a structure different from the semiconductor devices A10 to A13 and A20 to A23 of the first and second embodiments, a through hole may be formed in a portion of the conductive component 31 covered by the insulating component 60. Similarly, a through hole may be formed in a portion of the conductive component 32 covered by the insulating component 60. For example, Fig.38 The semiconductor device A10 shows a configuration example in which a through hole 319 is formed in the conductive component 31 and a through hole 329 is formed in the conductive component 32. The through hole 319 is formed in a portion of the first main body 311 of the conductive component 31 covered by the insulating component 60. The through hole 319 penetrates the first main body 311 in the thickness direction z. The through hole 329 is formed in a portion of the second main body 321 of the conductive component 32 covered by the insulating component 60. The through hole 329 penetrates the second main body 321 in the thickness direction z. The insulating component 60 is filled in each of the through holes 319 and 329. In such a modification, the two conductive components 31 and 32 can be fixed by using the insulating component 60 and arranged together. Furthermore, in this modification, the following effects can be obtained. First, when the insulating member 60 is formed (molded), the resin material flows from the upper side of the conductive member 31 in the thickness direction z to the lower side in the thickness direction z through the through holes 319 and 329, thereby suppressing the generation of voids in the insulating member 60. Second, the insulating member 60 formed in the through holes 319 and 329 can suppress the insulating member 60 from being peeled off from the conductive member 31 and the conductive member 32.

[0174] In a structure different from the semiconductor devices A10 to A13, A20 to A23 of the first and second embodiments, a portion of the surface of the conductive component 31 that contacts the insulating component 60 may be formed with unevenness. Similarly, a portion of the surface of the conductive component 32 that contacts the insulating component 60 may be formed with unevenness. For example, Fig.39The following is a structural example in which the upper surface of the first main body 311 of the conductive component 31 (the surface facing upward in the thickness direction z) and the upper surface of the second main body 321 of the conductive component 32 (the surface facing upward in the thickness direction z) are respectively rough surfaces (having fine projections and depressions) in the semiconductor device A10. In such a modified example, the two conductive components 31 and 32 can also be fixed by the insulating component 60 and arranged together. Moreover, in this modified example, the insulating component 60 can be prevented from peeling off from the conductive component 31 and the conductive component 32 by the anchoring effect generated by the projections and depressions of the two conductive components 31 and 32. In addition, in the example shown in the figure, an example in which the upper surfaces of the first main body 311 and the second main body 321 are rough surfaces is shown, but the lower surfaces can also be rough surfaces, or only the area in contact with the insulating component 60 can be rough surfaces.

[0175] In a structure different from the semiconductor devices A10 to A13 and A20 to A23 of the first and second embodiments, the insulating member 60 may not be a molded resin material but may be, for example, an insulating adhesive sheet. Fig.40 as well as Fig.41 FIG. 2 shows a configuration example in which the insulating member 60 of the semiconductor device A20 is an insulating adhesive sheet. Fig.40 as well as Fig.41 In the semiconductor device shown, the upper surfaces of the conductive components 31, 32, 41A, 42A, 41B, and 42B are arranged at the same (or substantially the same) height in the thickness direction z. Thus, the insulating component 60 contacts and adheres to a portion of the upper surfaces of the two conductive components 31, 32 and the plurality of conductive components 41A, 42A, 41B, 42B. In such a modification, the two conductive components 31, 32 can also be fixed by the insulating component 60 and arranged together. In addition, in this modification, the plurality of conductive components 41A, 42A, 41B, 42B can also be arranged together by the insulating component 60.

[0176] In a structure different from the semiconductor devices A10 to A13, A20 to A23 of the first embodiment and the second embodiment, the semiconductor circuit unit 20 may also have a plurality of first chips 21. In such a modification, the plurality of first chips 21 may all be transistors or diodes, or may be a structure including transistors and diodes (for example, connected in reverse parallel to transistors). Similarly, the semiconductor circuit unit 20 may also have a plurality of second chips 22. In such a modification, the plurality of second chips 22 may all be transistors or diodes, or may be a structure including transistors and diodes (for example, connected in reverse parallel to transistors).

[0177] The packaging structure of the semiconductor device disclosed in the present invention is not limited to the structures illustrated in the above-mentioned first to third embodiments (including their variations). For example, the semiconductor device disclosed in the present invention can also be applied to other TO (Transistor Outline) packages. Specifically, each semiconductor device A10~A13, A20~A23 of the first and second embodiments is an expansion of the packaging structure called TO-247, but can also be an expansion of other packaging structures called TO-220, TO-252, TO263, etc. That is, the semiconductor device disclosed in the present invention can encapsulate multiple semiconductor elements (first chip 21 and second chip 22) through a sealing resin 50 in a state having an appearance similar to that of a conventional TO package.

[0178] The semiconductor device and the method for manufacturing a semiconductor device according to the present disclosure are not limited to the above-mentioned embodiments. The specific structure of each part of the semiconductor device of the present disclosure and the specific processing of each step of the method for manufacturing a semiconductor device of the present disclosure can be freely changed in various designs. For example, the semiconductor device and the method for manufacturing a semiconductor device of the present disclosure include embodiments related to the following supplementary notes.

[0179] Supplement 1. A semiconductor device comprising:

[0180] Semiconductor Circuit Department;

[0181] A first conductive component, which is conductively connected to the semiconductor circuit portion;

[0182] a second conducting component, which is in conduction with the semiconductor circuit portion;

[0183] an insulating component connected to the first conductive component and the second conductive component; and

[0184] a sealing resin covering the semiconductor circuit portion, the first conductive component, the second conductive component, and a portion of the insulating component,

[0185] The first conductive member and the second conductive member are fixed by the insulating member.

[0186] Supplement 2. The semiconductor device according to Supplement 1, wherein:

[0187] The semiconductor circuit unit includes a first chip and a second chip.

[0188] The first conductive component is bonded to the first chip,

[0189] The second conductive component is bonded to the second chip.

[0190] Supplement 3. The semiconductor device according to Supplement 2, wherein:

[0191] The first chip is electrically connected to the second chip in series,

[0192] The semiconductor circuit portion forms a half-bridge circuit.

[0193] Appendix 4. The semiconductor device according to Appendix 3, comprising:

[0194] a first mounting portion, which mounts the first chip;

[0195] A second mounting portion, which mounts the second chip; and

[0196] The first terminal lead is away from the first mounting portion and the second mounting portion.

[0197] Supplement 5. The semiconductor device according to Supplement 4, wherein:

[0198] The first chip has a first main surface facing one side of the thickness direction of the sealing resin, a first back surface facing the other side of the thickness direction, a first main surface electrode formed on the first main surface, and a first back surface electrode formed on the first back surface.

[0199] The first back electrode is opposite to the first mounting portion and is electrically connected to the first mounting portion.

[0200] The second chip has a second main surface facing the one side in the thickness direction, a second back surface facing the other side in the thickness direction, a second main surface electrode formed on the second main surface, and a second back surface electrode formed on the second back surface.

[0201] The second back surface electrode faces the second mounting portion and is electrically connected to the second mounting portion.

[0202] Supplement 6. The semiconductor device according to Supplement 5, wherein:

[0203] The first conductive member electrically connects the first main surface electrode and the second mounting portion.

[0204] The second conductive member electrically connects the second main surface electrode and the first terminal lead.

[0205] Supplement 7. The semiconductor device according to Supplement 6, wherein:

[0206] The first mounting portion is located on one side of the second mounting portion in a first direction orthogonal to the thickness direction.

[0207] Appendix 8. The semiconductor device according to Appendix 7, further comprising:

[0208] a second terminal lead extending from the first mounting portion in a second direction perpendicular to the thickness direction and the first direction; and

[0209] a third terminal lead extending from the second mounting portion toward the second direction,

[0210] The first terminal lead, the second terminal lead, and the third terminal lead are arranged in the first direction.

[0211] Supplement 9. The semiconductor device according to Supplement 8, wherein:

[0212] The first terminal lead is located between the second terminal lead and the third terminal lead in the first direction.

[0213] Appendix 10. The semiconductor device according to Appendix 9, further comprising:

[0214] a fourth terminal lead;

[0215] a fifth terminal lead;

[0216] a third conductive component electrically connecting the first chip to the fourth terminal lead; and

[0217] a fourth conductive component electrically connecting the first chip to the fifth terminal lead,

[0218] The fourth terminal lead and the fifth terminal lead are located on the one side of the second terminal lead in the first direction, and are adjacent to each other in the first direction.

[0219] Supplement 11. The semiconductor device according to Supplement 10, wherein:

[0220] The insulating member is used as a first insulating member and further includes a second insulating member,

[0221] The third conductive component and the fourth conductive component are plate-shaped components, respectively.

[0222] The second insulating member fixes the third conductive member and the fourth conductive member.

[0223] Appendix 12. The semiconductor device according to Appendix 10 or Appendix 11, further comprising:

[0224] a sixth terminal lead;

[0225] Seventh terminal lead;

[0226] a fifth conductive component electrically connecting the second chip to the sixth terminal lead; and

[0227] a sixth conductive component electrically connecting the second chip to the seventh terminal lead,

[0228] The sixth terminal lead and the seventh terminal lead are located on the other side of the third terminal lead in the first direction, and are adjacent to each other in the first direction.

[0229] Supplement 13. The semiconductor device according to Supplement 12, wherein:

[0230] further comprising a third insulating member,

[0231] The fifth conductive component and the sixth conductive component are plate-shaped components respectively,

[0232] The third insulating member fixes the fifth conductive member and the sixth conductive member.

[0233] Supplement 14. The semiconductor device according to any one of Supplements 2 to 13, wherein:

[0234] The first chip is any one of a transistor and a diode,

[0235] The second chip is any one of a transistor and a diode.

[0236] Supplement 15. The semiconductor device according to any one of Supplements 1 to 14, wherein:

[0237] The insulating member is formed at a portion where the first conductive member and the second conductive member are close to each other when viewed in the thickness direction of the sealing resin.

[0238] Supplement 16. The semiconductor device according to any one of Supplements 1 to 15, wherein

[0239] The insulating member includes the same resin material as the sealing resin.

[0240] Supplement 17. The semiconductor device according to any one of Supplements 1 to 16, wherein:

[0241] A portion of the first conductive member and a portion of the second conductive member are sandwiched by the insulating member in a thickness direction.

[0242] Supplement 18. A method for manufacturing a semiconductor device, comprising:

[0243] A step of preparing a lead frame including a first conductive component and a second conductive component;

[0244] A step of fixing the first conductive component and the second conductive component by an insulating component in the state of the lead frame;

[0245] The step of bonding the first conductive member and the second conductive member to a semiconductor circuit portion in a state of being fixed by the insulating member; and

[0246] The step of forming a sealing resin covering the first conductive member, the second conductive member, and the semiconductor circuit portion.

[0247] Explanation of symbols

[0248] A10~A13, A20~A23—semiconductor device; 10A—first mounting portion; 10B—second mounting portion; 101—main surface; 102—back surface; 103—first seating surface; 104—first rising surface; 111—first end surface; 112—second end surface; 113—third end surface; 114—fourth end surface; 13—terminal lead; 14—first terminal lead; 14A—covering portion; 14B—exposed portion; 14C—second seating surface; 14D—second rising surface; 15—second terminal lead; 15A—covering portion; 15B—exposed portion; 16—third terminal lead; 16A—covering portion; 16B— exposed portion; 171—fourth terminal lead; 171A—covered portion; 171B—exposed portion; 172—sixth terminal lead; 172A—covered portion; 172B—exposed portion; 181—fifth terminal lead; 181A—covered portion; 181B—exposed portion; 182—seventh terminal lead; 182A—covered portion; 182B—exposed portion; 20—semiconductor circuit portion; 21—first chip; 21a—first main surface; 21b—first back surface; 211—first main surface electrode; 212, 214—main surface electrodes; 213—first back surface electrode; 22—second chip; 22a—second main surface; 22b— second back side; 221—second main surface electrode; 222, 224—main surface electrode; 223—second back side electrode; 231, 232—chip bonding layer; 30—lead frame; 301—frame portion; 302—hanging portion; 31—conductive component; 311—first main body portion; 311a, 311b—dividing portion; 312—first bonding portion; 312a—strip portion; 313—second bonding portion; 314—first connecting portion; 315—second connecting portion; 319—through hole; 32—conductive component; 321—second main body portion; 321a, 321b, 321c—dividing portion; 322—third bonding portion; 323—fourth bonding portion; 323a—strip portion; 324—third connecting portion; 325—fourth connecting portion; 329—through hole; 33—first bonding layer; 34—second bonding layer; 35—third bonding layer; 36—fourth bonding layer; 41A, 41B, 42A, 42B—conductive component; 50—sealing resin; 51—resin main surface; 52—resin back surface; 53—first side surface; 54—second side surface; 55—third side surface; 56—recess; 57—groove portion; 581, 582—recess; 60—insulating component; 61—first insulating component; 62—second insulating component; 63—third insulating component.

Claims

1. A semiconductor device, characterized in that: have: Semiconductor Circuit Department; A first conductive component, which is conductively connected to the semiconductor circuit portion; a second conducting component, which is in conduction with the semiconductor circuit portion; an insulating component connected to the first conductive component and the second conductive component; and a sealing resin covering the semiconductor circuit portion, the first conductive component, the second conductive component, and a portion of the insulating component, The first conductive member and the second conductive member are fixed by the insulating member.

2. The semiconductor device according to claim 1, wherein: The semiconductor circuit unit includes a first chip and a second chip. The first conductive component is bonded to the first chip, The second conductive component is bonded to the second chip.

3. The semiconductor device according to claim 2, wherein: The first chip is electrically connected to the second chip in series, The semiconductor circuit portion forms a half-bridge circuit.

4. The semiconductor device according to claim 3, wherein: have: a first mounting portion, which mounts the first chip; A second mounting portion, which mounts the second chip; and The first terminal lead is away from the first mounting portion and the second mounting portion.

5. The semiconductor device according to claim 4, wherein: The first chip has a first main surface facing one side of the thickness direction of the sealing resin, a first back surface facing the other side of the thickness direction, a first main surface electrode formed on the first main surface, and a first back surface electrode formed on the first back surface. The first back electrode is opposite to the first mounting portion and is electrically connected to the first mounting portion. The second chip has a second main surface facing the one side in the thickness direction, a second back surface facing the other side in the thickness direction, a second main surface electrode formed on the second main surface, and a second back surface electrode formed on the second back surface. The second back surface electrode faces the second mounting portion and is electrically connected to the second mounting portion.

6. The semiconductor device according to claim 5, wherein: The first conductive member electrically connects the first main surface electrode and the second mounting portion. The second conductive member electrically connects the second main surface electrode and the first terminal lead.

7. The semiconductor device according to claim 6, wherein: The first mounting portion is located on one side of the second mounting portion in a first direction orthogonal to the thickness direction.

8. The semiconductor device according to claim 7, wherein: Also available: a second terminal lead extending from the first mounting portion in a second direction perpendicular to the thickness direction and the first direction; and a third terminal lead extending from the second mounting portion toward the second direction, The first terminal lead, the second terminal lead, and the third terminal lead are arranged in the first direction.

9. The semiconductor device according to claim 8, wherein: The first terminal lead is located between the second terminal lead and the third terminal lead in the first direction.

10. The semiconductor device according to claim 9, wherein: Also available: a fourth terminal lead; a fifth terminal lead; a third conductive component electrically connecting the first chip to the fourth terminal lead; and a fourth conductive component electrically connecting the first chip to the fifth terminal lead, The fourth terminal lead and the fifth terminal lead are located on the one side of the second terminal lead in the first direction, and are adjacent to each other in the first direction.

11. The semiconductor device according to claim 10, wherein: The insulating member is used as a first insulating member and further includes a second insulating member, The third conductive component and the fourth conductive component are plate-shaped components, respectively. The second insulating member fixes the third conductive member and the fourth conductive member.

12. The semiconductor device according to claim 10 or 11, characterized in that: Also available: a sixth terminal lead; Seventh terminal lead; a fifth conductive component electrically connecting the second chip to the sixth terminal lead; and a sixth conductive component electrically connecting the second chip to the seventh terminal lead, The sixth terminal lead and the seventh terminal lead are located on the other side of the third terminal lead in the first direction, and are adjacent to each other in the first direction.

13. The semiconductor device according to claim 12, wherein: further comprising a third insulating member, The fifth conductive component and the sixth conductive component are plate-shaped components respectively, The third insulating member fixes the fifth conductive member and the sixth conductive member.

14. The semiconductor device according to any one of claims 2 to 13, characterized in that The first chip is any one of a transistor and a diode, The second chip is any one of a transistor and a diode.

15. The semiconductor device according to any one of claims 1 to 14, characterized in that The insulating member is formed at a portion where the first conductive member and the second conductive member are close to each other when viewed in the thickness direction of the sealing resin.

16. The semiconductor device according to any one of claims 1 to 15, characterized in that The insulating member includes the same resin material as the sealing resin.

17. The semiconductor device according to any one of claims 1 to 16, characterized in that A portion of the first conductive member and a portion of the second conductive member are sandwiched by the insulating member in a thickness direction.

18. A method for manufacturing a semiconductor device, characterized in that: have: A step of preparing a lead frame including a first conductive component and a second conductive component; A step of fixing the first conductive component and the second conductive component by an insulating component in the state of the lead frame; The step of bonding the first conductive member and the second conductive member to a semiconductor circuit portion in a state of being fixed by the insulating member; as well as The step of forming a sealing resin covering the first conductive member, the second conductive member, and the semiconductor circuit portion.

Images