Crystal directional processing method and device

Abstract

The invention relates to a crystal directional machining method and device.The crystal directional machining method comprises the steps that a motion platform where a to-be-machined crystal is placed is controlled, and the to-be-machined crystal is driven to rotate to a target pose; under the target pose, a first target crystal face meeting the Bragg condition with the incident X-ray exists in the crystal to be processed, and the incident X-ray is emitted through the X-ray diffractometer; performing directional cutting on the to-be-processed crystal in the target pose according to the first target crystal surface by utilizing a cutter to obtain a directional cutting crystal surface; searching a second target crystal face in the to-be-processed crystal; a common edge exists between the second target crystal face and the directional cutting crystal face; and determining a target calibration crystal orientation according to a common edge between the searched second target crystal face and the directional cutting crystal face, and carrying out directional cutting on the to-be-processed crystal according to the determined target calibration crystal orientation by utilizing a cutter to obtain a target processed crystal. According to the invention, the problems of long time consumption and low precision of crystal processing are solved.

Description

Technical Field

[0001] The present application relates to the technical field of crystal orientation, and in particular to a crystal orientation processing method and device. Background Art

[0002] Anisotropy is an inherent property of crystals, which manifests itself as differences in the optical, electrical, mechanical and other physical properties of crystals in different directions. Therefore, when processing crystals, it is necessary to consider the influence of crystal orientation and cut the crystals in specific directions.

[0003] In the related art, the crystal orientation is usually accurately calibrated by the Laue method or an orientator, and then the crystal is processed by an independent laser cutting device. However, in the above method, the crystal orientation needs to be completed first, and then the crystal is fixed to the cutting device again, which makes the operation cumbersome and time-consuming, and it is difficult to achieve full process automation; and the crystal may accumulate errors due to reinstallation during the transfer of the crystal from the orientator to the cutting device, affecting the accuracy of the final processing.

[0004] Currently, no effective solution has been proposed for the problem of long time consumption and low precision in crystal processing in related technologies. Summary of the invention

[0005] The embodiments of the present application provide a crystal orientation processing method and device to at least solve the problem of long time consumption and low precision of crystal processing in the related art.

[0006] In a first aspect, an embodiment of the present application provides a crystal orientation processing method for a crystal orientation processing device including an X-ray diffractometer, a cutter, and a motion platform; the method comprises: Controlling a motion platform on which a crystal to be processed is placed, driving the crystal to be processed to rotate to a target position; wherein, in the target position, there is a first target crystal plane in the crystal to be processed that satisfies the Bragg condition with the incident X-ray, and the incident X-ray is emitted via the X-ray diffractometer; Using the cutter, performing directional cutting on the crystal to be processed in the target posture according to the first target crystal plane to obtain a directional cutting crystal plane; Searching for a second target crystal plane inside the crystal to be processed that intersects with the directional cutting crystal plane; The target calibration crystal orientation is determined according to the common edge between the searched second target crystal plane and the directional cutting crystal plane, and the cutter is used to perform directional cutting on the crystal to be processed according to the determined target calibration crystal orientation to obtain a target processed crystal.

[0007] In some embodiments, controlling the motion platform on which the crystal to be processed is placed to drive the crystal to be processed to rotate to a target position includes: Controlling the X-ray diffractometer to scan the crystal to be processed which is driven to rotate by the motion platform at a preset first diffraction peak position; the first diffraction peak position is the diffraction peak position corresponding to the first target crystal plane; During the scanning process, when a first detection signal for the crystal to be processed is detected, the motion platform is controlled to stop rotating and the X-ray diffractometer is controlled to stop scanning in response to the first detection signal; when the motion platform stops rotating, the position of the crystal to be processed is the target position.

[0008] In some embodiments, the method further comprises: Obtain a preset crystal plane database; Retrieving a crystal plane matching the directional cutting crystal plane to be cut from the crystal plane database; In the case where the crystal plane matching the directional cutting crystal plane to be cut is retrieved, the retrieved crystal plane matching the directional cutting crystal plane to be cut is determined as a preset reference plane; In the case of failure in retrieving the crystal plane matching the directional cutting crystal plane to be cut, retrieving a crystal plane equivalent to the directional cutting crystal plane to be cut from the crystal plane database, and determining the preset reference plane based on the retrieved crystal plane equivalent to the directional cutting crystal plane to be cut; The first diffraction peak position is determined according to the preset reference plane.

[0009] In some embodiments, the use of the cutter to perform directional cutting on the crystal to be processed in the target posture according to the first target crystal plane to obtain the directional cutting crystal plane includes: The cutter is controlled to perform vertical directional cutting on the crystal to be processed according to the first target crystal plane during the movement of the motion platform along the first horizontal direction to obtain the directional cutting crystal plane; wherein the first horizontal direction is perpendicular to the first target crystal plane.

[0010] In some embodiments, the method further comprises: While controlling the cutter to perform vertical directional cutting on the first surface of the crystal to be processed to obtain a first directional cutting crystal plane, the motion platform is controlled to move to a specified position along a second horizontal direction. At the specified position, the cutter is again controlled to perform vertical directional cutting on the crystal to be processed according to the first target crystal plane during the movement of the motion platform along the first horizontal direction to obtain a second directional cutting crystal plane; wherein the second horizontal direction is perpendicular to the first horizontal direction.

[0011] In some embodiments, the emission light beam of the cutter has a taper; and the method further comprises: Correcting the tilt angle of the motion platform according to the taper of the emitted light beam of the cutter; The motion platform is controlled to tilt based on the tilt angle, and the cutter performs directional cutting on the crystal to be processed to obtain the directional cutting crystal plane.

[0012] In some embodiments, determining a second target crystal plane inside the to-be-processed crystal that intersects with the directional cutting crystal plane includes: Controlling the X-ray diffractometer to scan the crystal to be processed driven by the motion platform at a preset second diffraction peak position; the second diffraction peak position is the diffraction peak position corresponding to the second target crystal plane; During the scanning process, when a second detection signal for the crystal to be processed is detected, the motion platform is controlled to stop rotating and the X-ray diffractometer is controlled to stop scanning in response to the second detection signal, and the second target crystal plane of the crystal to be processed is determined in the position when the motion platform stops rotating.

[0013] In some embodiments, controlling the X-ray diffractometer to scan the crystal to be processed driven by the motion platform to rotate at a preset second diffraction peak position includes: Determining a preset tilt angle for the motion platform to rotate around a first tilt axis according to a second target crystal plane to be searched; The motion platform is controlled to be fixed at the preset tilt angle to drive the crystal to be processed to rotate around the second tilt axis, and the X-ray diffractometer is controlled to scan the crystal to be processed driven by the motion platform at the second diffraction peak position.

[0014] In a second aspect, an embodiment of the present application provides a crystal orientation processing device, the device comprising: an X-ray diffractometer, a cutter, a motion platform and a controller; The controller is respectively connected to the X-ray diffractometer, the cutter and the motion platform, and is used to execute the crystal orientation processing method as described in the first aspect above.

[0015] In some of these embodiments, the device further comprises a housing; The motion platform comprises a rotating mechanism and a carrier platform; wherein the rotating mechanism is used to rotate around a first tilt axis and a second tilt axis; the crystal to be processed is placed on the rotating mechanism; The carrier is installed at the bottom of the housing and moves along a first horizontal direction and a second horizontal direction; wherein the first horizontal direction and the second horizontal direction are perpendicular to each other; the X-ray diffractometer and the rotating mechanism are mounted on the carrier; The cutter is fixed at the top inside the housing.

[0016] Compared with the related art, the crystal orientation processing method and device provided in the embodiment of the present application drive the crystal to be processed to rotate to a target position by controlling a motion platform on which the crystal to be processed is placed; wherein, in the target position, there is a first target crystal plane in the crystal to be processed that satisfies the Bragg condition with the incident X-ray, and the incident X-ray is emitted via an X-ray diffractometer; using a cutter, the crystal to be processed in the target position is orientation-cut according to the first target crystal plane to obtain an orientation-cut crystal plane; searching for a second target crystal plane in the crystal to be processed; there is a common edge between the second target crystal plane and the orientation-cut crystal plane; determining a target calibration crystal orientation based on the common edge between the searched second target crystal plane and the orientation-cut crystal plane, and using a cutter, continuing orientation-cutting the crystal to be processed according to the determined target calibration crystal orientation to obtain a target processed crystal.

[0017] Based on this, the motion platform is controlled to achieve all-round adjustment of the crystal to be processed in three-dimensional space, and the Bragg condition is used to quickly and accurately find the target crystal plane; at the same time, automated control software is used to optimize the cutting path and angle of the cutter relative to the crystal to be processed according to the real-time detection data of the X-ray diffractometer, so that the entire orientation and cutting process is standardized and automated, and batch operations are identified, thereby realizing an integrated processing method of crystal orientation and cutting, effectively improving the accuracy and efficiency of crystal processing, and solving the problem of long time and low precision in crystal processing in related technologies.

[0018] Details of one or more embodiments of the present application are set forth in the following drawings and description to make other features, objects, and advantages of the present application more readily apparent. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] The drawings described herein are used to provide a further understanding of the present application and constitute a part of the present application. The illustrative embodiments of the present application and their descriptions are used to explain the present application and do not constitute an improper limitation on the present application. In the drawings: Figure 1 It is a hardware structure block diagram of a terminal of a crystal orientation processing method according to an embodiment of the present application; Figure 2 is a schematic diagram of a crystal orientation processing device according to an embodiment of the present application; Figure 3 is a flow chart of a crystal orientation processing method according to an embodiment of the present application; Figure 4 is a flow chart of directional cutting of a diamond surface according to an embodiment of the present application; Figure 5 is a flow chart of marking the crystal orientation of a diamond seed crystal according to an embodiment of the present application; Figure 6 It is a structural block diagram of a crystal orientation processing device according to an embodiment of the present application. DETAILED DESCRIPTION

[0020] In order to make the purpose, technical solutions and advantages of the present application clearer, the present application is described and illustrated below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present application and are not intended to limit the present application. Based on the embodiments provided in the present application, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the present application. In addition, it can also be understood that although the efforts made in this development process may be complex and lengthy, for ordinary technicians in the field related to the contents disclosed in the present application, some changes such as design, manufacturing or production based on the technical contents disclosed in the present application are only conventional technical means, and should not be understood as insufficient contents disclosed in the present application.

[0021] Reference to "embodiments" in this application means that a particular feature, structure, or characteristic described in conjunction with the embodiments may be included in at least one embodiment of the present application. The appearance of the phrase in various locations in the specification does not necessarily refer to the same embodiment, nor is it an independent or alternative embodiment that is mutually exclusive with other embodiments. It is explicitly and implicitly understood by those of ordinary skill in the art that the embodiments described in this application may be combined with other embodiments without conflict.

[0022] Unless otherwise defined, the technical terms or scientific terms involved in this application should be understood by people with ordinary skills in the technical field to which this application belongs. The words "one", "a", "a", "the" and the like involved in this application do not indicate a quantitative limitation and may represent the singular or plural. The terms "include", "comprise", "have" and any of their variations involved in this application are intended to cover non-exclusive inclusions; for example, a process, method, system, product or device that includes a series of steps or modules (units) is not limited to the listed steps or units, but may also include unlisted steps or units, or may also include other steps or units inherent to these processes, methods, products or devices. The words "connected", "connected" and the like involved in this application are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect. The "multiple" involved in this application means greater than or equal to two. The terms "first", "second", "third" and the like involved in this application are only used to distinguish similar objects and do not represent a specific ordering of objects.

[0023] The method embodiment provided in this embodiment can be executed in a terminal, a computer or a similar computing device. Taking running on a terminal as an example, Figure 1 1 is a hardware structure block diagram of a terminal of a crystal orientation processing method according to an embodiment of the present application. Figure 1 As shown, the terminal may include one or more ( Figure 1 Only one is shown in the figure) a processor 102 (the processor 102 may include but is not limited to a processing device such as a microprocessor MCU or a programmable logic device FPGA) and a memory 104 for storing data. Optionally, the terminal may also include a transmission device 106 and an input / output device 108 for communication functions. It can be understood by those skilled in the art that Figure 1 The structure shown is for illustration only and does not limit the structure of the above terminal. Figure 1 More or fewer components as shown, or with Figure 1 Different configurations are shown.

[0024] The memory 104 can be used to store computer programs, for example, software programs and modules of application software, such as the computer program corresponding to the crystal orientation processing method in the embodiment of the present application. The processor 102 executes various functional applications and data processing by running the computer program stored in the memory 104, that is, to implement the above method. The memory 104 may include a high-speed random access memory, and may also include a non-volatile memory, such as one or more magnetic storage devices, flash memory, or other non-volatile solid-state memory. In some instances, the memory 104 may further include a memory remotely arranged relative to the processor 102, and these remote memories may be connected to the terminal via a network. Examples of the above-mentioned network include, but are not limited to, the Internet, an intranet, a local area network, a mobile communication network, and combinations thereof.

[0025] The transmission device 106 is used to receive or send data via a network. The specific example of the above network may include a wireless network provided by a communication provider of the terminal. In one example, the transmission device 106 includes a network adapter (Network Interface Controller, referred to as NIC), which can be connected to other network devices through a base station so as to communicate with the Internet. In one example, the transmission device 106 can be a radio frequency (Radio Frequency, referred to as RF) module, which is used to communicate with the Internet wirelessly.

[0026] As described in the background technology, the prior art requires crystal orientation when processing semiconductor crystal raw materials into devices, and usually uses the light imaging method, conoscopic method, Laue method or orientator to calibrate the crystal orientation. Among them, the light imaging method and conoscopic method are very limited in application, with poor accuracy, and cannot be oriented to cut any crystal plane. When using the Laue method or orientator to accurately calibrate the crystal orientation, there are the following shortcomings: (1) Low efficiency of distributed operation; the prior art requires that the crystal orientation be completed first and then the crystal is re-fixed to the cutting equipment, resulting in cumbersome and time-consuming operation; (2) Loss of accuracy; during the transfer of the crystal from the orientator to the cutting equipment, errors may accumulate due to reinstallation, affecting the accuracy of the final processing; (3) Low degree of automation; the prior art relies on manual adjustment and data recording, making it difficult to achieve full process automation.

[0027] Based on the above problems, this embodiment provides a crystal orientation processing method, which is used for a crystal orientation processing device including an X-ray diffractometer, a cutter and a motion platform. Figure 2, the rotating mechanism 24 in the motion platform can rotate around the first tilt axis and around the second tilt axis. Among them, the first tilt axis refers to the axis perpendicular to the sample surface. The rotating mechanism 24 rotates around the first tilt axis, which can drive the sample placed on the rotating mechanism 24 to rotate around the axis in the vertical direction. The tilt angle of rotation in the figure is represented by angle χ; the second tilt axis refers to the axis inside the crystal sample. The rotating mechanism 24 rotates around the second tilt axis, which can drive the crystal sample placed on the rotating mechanism 24 to rotate around the axis in the horizontal direction. The tilt angle of rotation in the figure is represented by angle φ. It should be understood that the rotating mechanism 24 can rotate around the second tilt axis at a fixed first tilt angle around the first tilt axis; vice versa; or it can perform arbitrary rotational movements around the first tilt axis and the second tilt axis at the same time. In this way, a rotation control method that can flexibly change the crystal orientation in three-dimensional space is realized.

[0028] Figure 3 is a flow chart of a crystal orientation processing method according to an embodiment of the present application, such as Figure 3 As shown, the process includes the following steps: Step S310, controlling the motion platform on which the crystal to be processed is placed, driving the crystal to be processed to rotate to a target posture; wherein, in the target posture, there is a first target crystal plane in the crystal to be processed that satisfies the Bragg condition with the incident X-ray, and the incident X-ray is emitted via an X-ray diffractometer.

[0029] Specifically, during the search for a specific crystal plane, the X-ray diffractometer is turned on and the motion platform is controlled to rotate; the motion platform can accurately adjust the position and angle of the placed crystal to be processed. The X-ray diffractometer includes an X-ray emitter and a detector, wherein the X-ray emitter and the detector are respectively installed on opposite sides of the motion platform. The X-ray generator continuously emits X-rays to the rotating crystal to be processed; when the X-rays hit the crystal, they are scattered by atoms or molecules in the crystal. When the Bragg law is satisfied, that is, when the path difference between the incident wave and the reflected wave is an integer multiple of the wavelength, these waves will reinforce each other and generate a strong diffraction signal, which can be detected by the detector at this time, thereby determining the first target crystal plane that meets the Bragg condition when rotated to the current posture.

[0030] Step S320: using a cutter to perform directional cutting on the crystal to be processed in the target posture according to the first target crystal plane to obtain a directional cutting crystal plane.

[0031] Among them, once the first target crystal plane that meets the Bragg condition is determined, the cutter can be used to cut the crystal to be processed in situ. Because in the process of finding the first target crystal plane through the above step S310, the motion platform drives the first target crystal plane to rotate, so that the crystal moves to the target posture when the first target crystal plane is detected. In this target posture, Bragg is just a vertical plane. At this time, you only need to open the cutter to cut the crystal to be processed vertically, and the directional cutting crystal plane can be cut out from the crystal surface, thereby optimizing the cutting path and angle.

[0032] It should also be noted that the above-mentioned cutter can be a laser cutting device or a wire cutting device. For example, for high hardness or small size crystals, laser cutting devices can be used to cut them; while for low hardness or large size crystals, wire cutting devices can be used to cut them.

[0033] Step S330, searching for a second target crystal plane in the crystal to be processed; there is a common edge between the second target crystal plane and the directional cutting crystal plane.

[0034] After the crystal orientation processing device automatically scans, detects and cuts the crystal surface of the crystal, the crystal orientation is calibrated for the crystal with the current surface orientation cut and unknown side orientation. Since the crystal orientation cannot be detected by the X-ray diffractometer, in this embodiment, it is necessary to use the second target crystal plane in the crystal that intersects with the orientation cutting crystal plane and has a common edge to determine. Among them, the common edge is the crystal orientation to be calibrated (i.e., the target calibration crystal orientation).

[0035] Specifically, similar to the process of searching for the first target crystal plane in the above step S310, in this step, the motion platform can also be controlled to drive the crystal to be processed to rotate, and the X-ray diffractometer can scan the continuously rotating crystal to be processed until a signal is detected, at which time the second target crystal plane to be found is determined. It should be understood that the crystal planes found in step S330 are different from those found in step S310 because the X-ray diffractometer scans and detects the crystal at different scanning angles; for example, when the X-ray diffractometer is fixed at a scanning angle corresponding to the first target crystal plane, the first target crystal plane is detected; when the X-ray diffractometer is fixed at a scanning angle corresponding to the second target crystal plane, the second target crystal plane is detected.

[0036] Step S340, determining the target calibration crystal orientation according to the common edge between the searched second target crystal plane and the directional cutting crystal plane, and using a cutter to continue directional cutting of the crystal to be processed according to the determined target calibration crystal orientation to obtain a target processed crystal.

[0037] After the cutting is completed, a target processed crystal with a specific crystal orientation and shape will be obtained; the target processed crystal can be used for subsequent experiments, production or applications. It should also be understood that in the above crystal processing process, the user only needs to input the crystal face to be found and cut, as well as the placement of the crystal, and the crystal orientation processing device can adaptively complete the crystal face search and cutting of the crystal to be processed, realizing an integrated processing flow for cutting specific crystal faces and crystal orientations of the crystal.

[0038] In the above-mentioned crystal orientation processing method, the motion platform is controlled to realize all-round adjustment of the crystal to be processed in three-dimensional space, and the Bragg condition is used to quickly and accurately find the target crystal plane; at the same time, the automatic control software is used to optimize the cutting path and angle of the cutter relative to the crystal to be processed according to the real-time detection data of the X-ray diffractometer, so that the entire orientation and cutting process is standardized and automated, thereby realizing an integrated processing method of crystal orientation and cutting. There is no need to re-fix the crystal to the cutting equipment after the crystal orientation is completed, and the loss of accuracy caused by reinstallation during the transfer of the crystal from the orientator to the cutting equipment is avoided, which effectively improves the accuracy and efficiency of crystal processing and solves the problem of long time and low accuracy of crystal processing in related technologies.

[0039] In some embodiments, the above-mentioned controlling the motion platform on which the crystal to be processed is placed to drive the crystal to be processed to rotate to the target posture also includes the following steps: The X-ray diffractometer is controlled to scan the crystal to be processed which is rotated by the motion platform at a preset first diffraction peak position; the first diffraction peak position is the diffraction peak position corresponding to the first target crystal plane; during the scanning process, when a first detection signal for the crystal to be processed is detected, the motion platform is controlled to stop rotating and the X-ray diffractometer is controlled to stop scanning in response to the first detection signal; the position of the crystal to be processed when the motion platform stops rotating is the target position.

[0040] The first diffraction peak position refers to the angular deflection position of the first target crystal plane in the crystal to be processed that can be detected by the X-ray diffractometer relative to the crystal to be processed. Figure 2 For example, the motion platform includes a carrier 23, and the X-ray generator 21 and the detector 22 in the X-ray diffractometer are respectively mounted on opposite sides of the carrier 23. The angle of horizontal rotation of the X-ray generator 21 around the center point of the carrier 23 is angle ω, and the angle of horizontal rotation of the detector 22 around the center point of the carrier 23 is angle 2θ. At this time, if the (004) crystal plane needs to be detected, the deflection angle ω of the X-ray generator 21 needs to be fixed at 59.76°, and the deflection angle 2θ of the detector 22 needs to be fixed at 119.52°; where 2θ=119.52° and ω=59.76° are the first diffraction peak positions determined above.

[0041] Next, the X-ray detector is controlled to start scanning the crystal to be processed at the preset first diffraction peak position. During the scanning process, the X-rays will pass through the crystal and diffract, and the diffraction signal will be captured by the detector and converted into an electrical signal. During the scanning process, the detector will detect and record the diffraction signal in real time. When a signal matching the first diffraction peak position is detected, it is considered that the diffraction peak corresponding to the first target crystal plane has been found. At this time, a first detection signal will be generated in response, and the motion platform will be controlled to stop rotating immediately, and the X-ray diffractometer will be controlled to stop scanning at the same time; this is to ensure that after finding the exact position of the first target crystal plane, the current position of the crystal can be kept unchanged, so when the motion platform stops rotating, the position of the crystal to be processed is the target position. This target position is a key position that needs to be maintained during the subsequent cutting process.

[0042] After determining the target posture, the crystal can be cut along a specific direction using a cutter to obtain a processed crystal with the desired crystal plane cut out of the surface. In this embodiment, the X-ray diffractometer is placed horizontally, and when the X-ray emitted by the X-ray diffractometer is incident on the crystal along a specific angle, it is reflected on the first target crystal plane to form a reflection plane, that is, the Bragg plane; the Bragg plane is a vertical plane. Based on this, when the motion platform stops rotating, for the crystal to be processed in the target posture, it is only necessary to control the cutter to open and perform in-situ cutting in the vertical direction on the surface of the crystal to be processed, which is easy to operate.

[0043] Through the above-mentioned embodiments, by using a method combining an X-ray diffractometer and a motion platform, the target position of the crystal to be processed can be accurately located; this process requires precise control and real-time detection feedback to ensure that the target position of the crystal can be accurately found and maintained, thereby optimizing the cutting path.

[0044] In some embodiments, the crystal orientation processing method may further include the following steps: Acquire a preset crystal plane database; retrieve a crystal plane matching the directional cutting crystal plane to be cut from the crystal plane database; in the case of retrieving a crystal plane matching the directional cutting crystal plane to be cut, determine the retrieved crystal plane matching the directional cutting crystal plane to be cut as a preset reference plane; in the case of failing to retrieve a crystal plane matching the directional cutting crystal plane to be cut, retrieve a crystal plane equivalent to the directional cutting crystal plane to be cut from the crystal plane database, and determine a preset reference plane based on the retrieved crystal plane equivalent to the directional cutting crystal plane to be cut; determine the position of the first diffraction peak according to the preset reference plane.

[0045] The above-mentioned crystal plane database is used to store crystal plane data that can observe diffraction behavior that meets the Bragg condition, including crystal planes and diffraction data that matches the crystal planes. If the directional cutting crystal plane to be queried cannot be retrieved from the crystal plane database, it means that the directional cutting crystal plane to be cut is an extinction plane or a high-index diffraction plane. For high-index diffraction crystal planes, there is a problem of poor practicality due to the need for additional complex mathematical calculations and manual adjustments required for cutting. If the directional cutting crystal plane is an extinction crystal plane, it is difficult to observe diffraction behavior that meets the Bragg condition, which in turn affects the orientation and cutting of the crystal.

[0046] In order to improve the above problem, when the directional cutting crystal face to be cut cannot be retrieved from the crystal face database, it means that the directional cutting crystal face to be cut is an extinction face or a high-index crystal face. At this time, the preset reference face equivalent to the directional cutting crystal face can be retrieved and determined from the crystal face database. For example, the (001) crystal face of the diamond crystal is an extinction face. In the actual processing process, the (004) crystal face equivalent to the crystal face searched from the database can be input into the program, and the (004) crystal face can be determined as the preset reference face, and the first diffraction peak position that can detect the preset reference face can be determined, so that the above crystal orientation processing device can respond to the input (004) crystal face, and use the steps described in any of the above embodiments to perform the subsequent orientation and cutting integrated process.

[0047] In addition, if the software or tool can retrieve a crystal plane that matches the directional cutting crystal plane to be cut in the crystal plane database, the processing process is relatively simple: the retrieved matching crystal plane can be directly determined as the preset reference plane. In this case, since the crystal plane to be cut that can observe the diffraction behavior that satisfies the Bragg condition has been found, there is no need to further search for equivalent crystal planes or perform other complex analysis.

[0048] Through the above embodiments, precise cutting can be achieved for any high-index crystal face or matte face, effectively expanding the application scope of crystal processing.

[0049] On the other hand, see Figure 2 , the rotating mechanism of the motion platform can rotate around the first tilt axis perpendicular to the sample surface, and the rotation angle range is 0° to 89°; based on this consideration, when it is necessary to determine the preset reference plane, the preset reference plane can also be determined in combination with the angle between the surface of the crystal to be processed; specifically, obtain the recommended reference plane equivalent to the directional cutting crystal plane from the crystal plane database; calculate the angle between the recommended reference plane and the surface of the crystal to be processed, and select the reference plane whose angle is within the preset angle range (such as 0° to 89°) as the above-mentioned preset reference plane. Combined with the angle consideration, it can effectively avoid the problem that the crystal plane to be searched exceeds the rotation range of the motion platform, resulting in the problem that the crystal plane cannot be observed, and further improve the reliability of the crystal orientation processing method.

[0050] In some embodiments, the above-mentioned use of a cutter to perform directional cutting of the crystal to be processed in the target position according to the first target crystal plane to obtain the directional cutting crystal plane may also include the following steps: The cutter is controlled to perform vertical directional cutting on the crystal to be processed according to the first target crystal plane during the movement of the moving platform along the first horizontal direction to obtain a directional cutting crystal plane; wherein the first horizontal direction is a horizontal direction perpendicular to the first target crystal plane.

[0051] More specifically, in the above-mentioned crystal orientation processing device, the motion platform also includes a carrier platform; see Figure 2 , the carrier 23 can move along the first horizontal direction (X axis) and the second horizontal direction (Y axis), so that the entire motion platform can drive the crystal to be processed placed thereon to move along these two directions on the horizontal plane. In the process of directional cutting of the crystal to be processed, the position of the cutter 25 can remain fixed, and the crystal to be processed is driven by the carrier 23 to move along the X axis. In this process, the cutter 25 emits a vertical laser beam to the crystal to be processed at its fixed position, thereby achieving directional cutting of the crystal to be processed in the vertical direction.

[0052] In some embodiments, the crystal orientation processing method further comprises the following steps: When controlling the cutter to perform vertical directional cutting on the first surface of the crystal to be processed to obtain a first directional cutting crystal plane, the motion platform is controlled to move to a specified position along a second horizontal direction. At the specified position, the cutter is again controlled to perform vertical directional cutting on the crystal to be processed according to the first target crystal plane while the motion platform moves along the first horizontal direction to obtain a second directional cutting crystal plane; wherein the second horizontal direction is a horizontal direction perpendicular to the first horizontal direction.

[0053] Among them, after a directional cutting crystal plane is cut out of one of the surfaces of the crystal to be processed, the support table in the motion platform is controlled to drive the crystal to be processed to move along the second horizontal direction (Y axis) so that the other side surface of the crystal to be processed is aligned with the cutter, and then the support table is controlled to drive the crystal to be processed to move along the X axis, and at the same time, the cutter is opened to perform in-situ cutting on the crystal to be processed moving along the X axis.

[0054] Through the above-mentioned embodiment, a software-controlled four-axis motion platform is provided, thereby realizing all-round adjustment of the crystal to be processed in three-dimensional space, making the operation process of crystal cutting processing more convenient.

[0055] In some embodiments, the emission light beam of the cutter has a taper; and the crystal orientation processing method further comprises: According to the taper of the emitted light beam of the cutter, the tilt angle of the motion platform is corrected; the motion platform is controlled to tilt based on the tilt angle, and the cutter performs direction cutting on the crystal to be processed to obtain a directionally cut crystal plane.

[0056] When a laser cutter is used, the laser beam emitted by the cutter has a certain taper, which will cause the surface of the crystal to be processed to have a certain inclination, resulting in the offset of the cut crystal plane. Therefore, in this embodiment, the inclination angle required for the current motion platform to be tilted can be determined based on the taper data of the laser emission beam itself, and the motion platform can be controlled to continue to perform a slight rotational motion along the first tilt axis according to the inclination angle, thereby achieving correction. Finally, the inclination is kept unchanged at the corrected angle, and the cutter performs in-situ cutting of the crystal to be processed, so that the cut plane is a precise directional cutting crystal plane, which effectively reduces the influence of the taper of the laser beam on the cutting accuracy.

[0057] In some embodiments, the above-mentioned determination of the second target crystal plane inside the to-be-processed crystal that intersects with the directional cutting crystal plane comprises the following steps: The X-ray diffractometer is controlled to scan the crystal to be processed which is rotated by the motion platform at a preset second diffraction peak position; the second diffraction peak position is the diffraction peak position corresponding to the second target crystal plane; during the scanning process, when a second detection signal for the crystal to be processed is detected, the motion platform is controlled to stop rotating and the X-ray diffractometer is controlled to stop scanning in response to the second detection signal, and the second target crystal plane of the crystal to be processed is determined in the position when the motion platform stops rotating.

[0058] In the process of cutting the side of the crystal to be processed or marking the crystal orientation, it is necessary to find the second target crystal plane. Taking the (202) crystal plane as the second target crystal plane, the ω and 2θ angles of the X-ray diffractometer are set at the position of (37.65°, 75.30°), which is also the position of the second diffraction peak. At this position, the X-ray diffractometer is controlled to continuously scan the gradually rotating crystal to be processed until a reflection signal is detected, at which time the second target crystal plane is determined.

[0059] In some embodiments, controlling the X-ray diffractometer to scan the crystal to be processed driven by the moving platform to rotate at a preset second diffraction peak position comprises the following steps: According to the second target crystal plane to be searched, a preset tilt angle for the motion platform to rotate around the first tilt axis is determined; the motion platform is controlled to be fixed at the preset tilt angle, and the crystal to be processed is driven to rotate around the second tilt axis; and the X-ray diffractometer is controlled to scan the crystal to be processed driven by the motion platform at the second diffraction peak position.

[0060] More specifically, the preset tilt angle is determined according to the angle between the second target crystal plane and the directional cutting crystal plane. For example, if the angle between the second target crystal plane and the directional cutting crystal plane is 45°, the preset tilt angle χ of the motion platform rotating around the first tilt axis is set to 45°, that is, the tilt plane rotating around the first tilt axis is 45° with the horizontal plane. At the same time, the φ angle rotating around the second tilt axis is changed to remain unchanged within the range of 0°~360°. Therefore, no matter when the X-ray diffractometer detects the reflected signal, the χ angle of the position to which the crystal to be processed rotates remains unchanged, and only the φ angle changes. And the common edge between the second target crystal plane and the directional cutting is also the target calibration crystal direction, then the crystal plane to be cut out finally has the same angle of inclination relative to the common edge as the angle between the above two crystal planes, and since the motion platform has been set to tilt at the preset angle according to the angle, based on the above analysis, the crystal plane to be cut out finally happens to be a horizontal plane, so at this time the cutter only needs to cut the crystal to be processed horizontally.

[0061] Through the above embodiments, the inclination angle of the motion platform is determined according to the angle between the crystal planes, and a simple geometric relationship between the X-ray diffractometer, the motion platform and the cutter is constructed, so that the final cutter only needs to cut the crystal to be processed in situ in a specific direction, thereby effectively optimizing the cutting path.

[0062] The crystal orientation processing method of the present application is described in detail below in conjunction with a specific embodiment. 3 For example, the (001) crystal plane of a diamond seed crystal and the crystal orientation marked

[001] , see Figure 4 The process of directional cutting of the (001) crystal plane of the diamond surface includes the following steps: Step S401, placing the diamond seed crystal to be cut and calibrating the XRD optical path. The diamond seed crystal of unknown orientation is fixed on the sample stage, and the XRD optical path is calibrated to ensure that the sample is parallel to the incident direction of the X-ray, and at this time, the sample surface is parallel to the Bragg plane.

[0063] Step S402, search for the (004) crystal plane. Specifically, it is similar to making the (004) diffusion pole figure of the unknown surface orientation, except that the purpose of this step is to adjust the x-axis and the φ-axis to make the Bragg plane the (004) crystal plane inside the crystal; wherein the (004) crystal plane is equivalent to the (001) crystal plane, and the (004) crystal plane is a non-extinction plane. More specifically, the ω and 2θ axes of the X-ray diffusion instrument are fixed at the diffusion peak position of the diamond (004) (2θ is 119.52°, ω is 59.76°), the angle range of rotation around the x-axis is set to 0°~89° (if the angle between the seed crystal surface and the (004) crystal plane exceeds this value, other equivalent non-extinction crystal planes can be selected), and the angle range of rotation around the φ-axis is 0°~360°; in this way, the diamond seed crystal is tilted in incremental steps within the x-axis scanning range, and rotates a full 360° in each step within the φ-axis rotation range. Diffraction occurs when the (004) crystal plane tilts and rotates to the Bragg plane, so the scan ends when the detector detects a diffraction signal.

[0064] Step S403, turn on the laser cutter to cut the (004) crystal plane of one surface of the diamond seed crystal. Since the Bragg plane is a vertical plane, the laser cutter can just cut out the (004) crystal plane of the diamond seed crystal by cutting vertically along the X axis. In addition, the laser beam usually has a taper, which can be corrected by tilting the x axis to ensure that the cut plane is a precise (004) crystal plane.

[0065] Step S404, the upper and lower surfaces of the diamond seed crystal are cut to form (004) crystal planes. After one of the (004) planes is cut, the motion platform is moved along the Y axis and cut again, so that the upper and lower surfaces of the seed crystal can be cut to form (004) crystal planes. Since the (004) crystal plane is equivalent to the (001) crystal plane, it can be regarded as cutting the (001) crystal plane on the surface of the seed crystal.

[0066] Next, the diamond seed crystal is marked with its crystal orientation to complete the crystal processing. Figure 5 The crystal orientation calibration process of the diamond seed crystal includes the following steps: Step S501, change the placement orientation of the diamond seed crystal and calibrate the XRD optical path. The diamond seed crystal with the surface (001) crystal plane and unknown side orientation cut out through the above steps S401 to S404 is taken out, the (001) crystal plane is fixed parallel to the motion platform, and the XRD optical path is calibrated to ensure that the seed crystal sample is parallel to the X-ray incident direction. At this time, the sample surface is parallel to the Bragg plane.

[0067] Step S502, search for the (202) crystal plane. Specifically, set the ω and 2θ axes of the X-ray diffractometer to the projection position of the diamond (202) (2θ is 75.30°, ω is 37.65°), tilt the χ axis by 45°, which is the angle between the (202) crystal plane and the (004) crystal plane, and then perform an azimuth scan (φ-scan) of the 202 crystal plane in the seed crystal plane. Since the in-plane (202) crystal plane and the out-of-plane (004) crystal plane are 45 degrees along the

[100] crystal direction, when the

[100] crystal direction is horizontal by rotating the φ axis, the detector can detect the reflection signal of the 202 crystal plane, and the XRD scanning work is terminated at this time.

[0068] Step S503, marking the

[001] crystal direction of the seed crystal surface. The motion platform is rotated to a horizontal direction, and the direction in which the carrier moves along the X-axis is parallel to the

[001] crystal direction; the laser cutter is turned on, the focus is aligned on the seed crystal surface, and horizontal cutting is performed along the X-axis. At this time, the (001) crystal plane on the side of the diamond seed crystal can be cut in a directional manner, that is, the

[001] crystal direction of the seed crystal surface is marked.

[0069] It should be noted that the steps shown in the above process or the flowchart in the accompanying drawings can be executed in a computer system such as a set of computer executable instructions, and although a logical order is shown in the flowchart, in some cases, the steps shown or described can be executed in an order different from that shown here.

[0070] This embodiment also provides a crystal orientation processing device, Figure 6 is a structural block diagram of a crystal orientation processing device according to an embodiment of the present application, such as Figure 6 As shown, the device includes: an X-ray diffractometer 61, a cutter 25, a motion platform 63 and a controller 64; the controller 64 is connected to the X-ray diffractometer 61, the cutter 25 and the motion platform 63, respectively, and is used to execute the crystal orientation processing method described in any of the above embodiments. The controller 64 can be a control device such as a chip or a single-chip microcomputer installed in the crystal orientation processing device, or a computer or other device that is connected to the components in the crystal orientation processing device.

[0071] In some embodiments, the crystal orientation processing device further includes a housing; a motion platform including a rotating mechanism and a carrier; wherein the rotating mechanism is used to rotate around a first tilt axis and a second tilt axis; the crystal to be processed is placed on the rotating mechanism; the carrier is installed at the bottom of the housing and moves along a first horizontal direction and a second horizontal direction; wherein the first horizontal direction and the second horizontal direction are perpendicular to each other; the X-ray diffractometer and the rotating mechanism are mounted on the carrier. For example, the carrier can be moved along the first horizontal direction or the second horizontal direction via a moving track at the bottom of the housing.

[0072] The cutter is fixed at the top of the housing. Taking the case where the cutter is a laser cutter, the laser cutter fixed at the top of the housing emits a laser beam toward the crystal to be processed below to complete the cutting.

[0073] This embodiment further provides an electronic device, including a memory and a processor, wherein a computer program is stored in the memory, and the processor is configured to run the computer program to execute the steps in any one of the above method embodiments.

[0074] Optionally, the electronic device may further include a transmission device and an input / output device, wherein the transmission device is connected to the processor, and the input / output device is connected to the processor.

[0075] Optionally, in this embodiment, the processor may be configured to perform the following steps through a computer program: S1, controlling a motion platform on which a crystal to be processed is placed, driving the crystal to be processed to rotate to a target position; wherein, in the target position, there is a first target crystal plane in the crystal to be processed that satisfies the Bragg condition with the incident X-ray, and the incident X-ray is emitted via an X-ray diffractometer.

[0076] S2, using a cutter, directional cutting is performed on the crystal to be processed in the target position according to the first target crystal plane to obtain a directional cutting crystal plane.

[0077] S3, searching for a second target crystal plane in the crystal to be processed; there is a common edge between the second target crystal plane and the directional cutting crystal plane.

[0078] S4, determining a target calibration crystal orientation according to the common edge between the searched second target crystal plane and the directional cutting crystal plane, and using a cutter to continue directional cutting of the crystal to be processed according to the determined target calibration crystal orientation to obtain a target processed crystal.

[0079] It should be noted that the specific examples in this embodiment can refer to the examples described in the above embodiments and optional implementation modes, and this embodiment will not be described in detail here.

[0080] In addition, in combination with the crystal orientation processing method in the above embodiment, the embodiment of the present application can provide a storage medium for implementation. The storage medium stores a computer program; when the computer program is executed by a processor, any one of the crystal orientation processing methods in the above embodiment is implemented.

[0081] Those of ordinary skill in the art can understand that all or part of the processes in the methods of the above embodiments can be completed by instructing relevant hardware through a computer program. The computer program can be stored in a non-volatile computer-readable storage medium. When the computer program is executed, it can include the processes of the embodiments of the above methods. Among them, any reference to a memory, database, or other medium used in the embodiments provided in the present application can include at least one of non-volatile and volatile memories. Non-volatile memory can include read-only memory (ROM), magnetic tape, floppy disk, flash memory, optical memory, high-density embedded non-volatile memory, resistive random access memory (ReRAM), magnetoresistive random access memory (MRAM), ferroelectric random access memory (FRAM), phase change memory (PCM), graphene memory, etc. Volatile memory can include random access memory (RAM) or external cache memory, etc. By way of illustration and not limitation, RAM can be in various forms, such as static random access memory (SRAM) or dynamic random access memory (DRAM), etc. The databases involved in the embodiments provided in the present application can include at least one of relational databases and non-relational databases. Non-relational databases can include distributed databases based on blockchain, etc., without limitation. The processors involved in the embodiments provided in the present application can be general-purpose processors, central processing units, graphics processing units, digital signal processors, programmable logic devices, data processing logics based on quantum computing, etc., without limitation.

[0082] Those skilled in the art should understand that the technical features of the above embodiments can be combined arbitrarily. For the sake of brevity of description, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, it should be considered as the scope described in this specification.

[0083] The above embodiments only represent several implementation manners of the present application. The description is relatively specific and detailed, but it should not be construed as a limitation on the scope of the invention patent. It should be noted that for those of ordinary skill in the art, without departing from the concept of the present application, several modifications and improvements can still be made, and these all belong to the protection scope of the present application. Therefore, the protection scope of the patent of the present application should be subject to the appended claims.

Claims

1. A crystal orientation processing method, characterized in that: A crystal orientation processing device comprising an X-ray diffractometer, a cutter and a motion platform; the method comprising: Controlling a motion platform on which a crystal to be processed is placed, driving the crystal to be processed to rotate to a target position; wherein, in the target position, there is a first target crystal plane in the crystal to be processed that satisfies the Bragg condition with the incident X-ray, and the incident X-ray is emitted via the X-ray diffractometer; Using the cutter, performing directional cutting on the crystal to be processed in the target position according to the first target crystal plane to obtain a directional cutting crystal plane; Searching for a second target crystal plane in the crystal to be processed; there is a common edge between the second target crystal plane and the directional cutting crystal plane; The target calibration crystal orientation is determined according to the common edge between the searched second target crystal plane and the directional cutting crystal plane, and the cutter is used to perform directional cutting on the crystal to be processed according to the determined target calibration crystal orientation to obtain a target processed crystal.

2. The crystal orientation processing method according to claim 1, characterized in that: The controlling of the motion platform on which the crystal to be processed is placed, so as to drive the crystal to be processed to rotate to a target posture, comprises: Controlling the X-ray diffractometer to scan the crystal to be processed which is driven to rotate by the motion platform at a preset first diffraction peak position; the first diffraction peak position is the diffraction peak position corresponding to the first target crystal plane; During the scanning process, when a first detection signal for the crystal to be processed is detected, the motion platform is controlled to stop rotating and the X-ray diffractometer is controlled to stop scanning in response to the first detection signal; when the motion platform stops rotating, the position of the crystal to be processed is the target position.

3. The crystal orientation processing method according to claim 2, characterized in that: The method further comprises: Obtain a preset crystal plane database; Retrieving a crystal plane matching the directional cutting crystal plane to be cut from the crystal plane database; In the case where the crystal plane matching the directional cutting crystal plane to be cut is retrieved, the retrieved crystal plane matching the directional cutting crystal plane to be cut is determined as a preset reference plane; In the case of failure in retrieving the crystal plane matching the directional cutting crystal plane to be cut, retrieving a crystal plane equivalent to the directional cutting crystal plane to be cut from the crystal plane database, and determining the preset reference plane based on the retrieved crystal plane equivalent to the directional cutting crystal plane to be cut; The first diffraction peak position is determined according to the preset reference plane.

4. The crystal orientation processing method according to claim 1, characterized in that: The method of using the cutter to perform directional cutting on the crystal to be processed in the target position according to the first target crystal plane to obtain a directional cutting crystal plane includes: The cutter is controlled to perform vertical directional cutting on the crystal to be processed according to the first target crystal plane during the movement of the motion platform along the first horizontal direction to obtain the directional cutting crystal plane; wherein the first horizontal direction is perpendicular to the first target crystal plane.

5. The crystal orientation processing method according to claim 4, characterized in that: The method further comprises: While controlling the cutter to perform vertical directional cutting on the first surface of the crystal to be processed to obtain a first directional cutting crystal plane, the motion platform is controlled to move to a specified position along a second horizontal direction. At the specified position, the cutter is again controlled to perform vertical directional cutting on the crystal to be processed according to the first target crystal plane during the movement of the motion platform along the first horizontal direction to obtain a second directional cutting crystal plane; wherein the second horizontal direction is perpendicular to the first horizontal direction.

6. The crystal orientation processing method according to claim 4, characterized in that: The emission light beam of the cutter has a taper; the method further comprises: Correcting the tilt angle of the motion platform according to the taper of the emitted light beam of the cutter; The motion platform is controlled to tilt based on the tilt angle, and the cutter performs directional cutting on the crystal to be processed to obtain the directional cutting crystal plane.

7. The crystal orientation processing method according to claim 1, characterized in that: The step of determining a second target crystal plane inside the to-be-processed crystal that intersects with the directional cutting crystal plane comprises: Controlling the X-ray diffractometer to scan the crystal to be processed driven by the motion platform at a preset second diffraction peak position; the second diffraction peak position is the diffraction peak position corresponding to the second target crystal plane; During the scanning process, when a second detection signal for the crystal to be processed is detected, the motion platform is controlled to stop rotating and the X-ray diffractometer is controlled to stop scanning in response to the second detection signal, and the second target crystal plane of the crystal to be processed is determined in the position when the motion platform stops rotating.

8. The crystal orientation processing method according to claim 7, characterized in that: The step of controlling the X-ray diffractometer to scan the crystal to be processed which is rotated by the motion platform at a preset second diffraction peak position comprises: Determining a preset tilt angle for the motion platform to rotate around a first tilt axis according to a second target crystal plane to be searched; The motion platform is controlled to be fixed at the preset tilt angle to drive the crystal to be processed to rotate around the second tilt axis, and the X-ray diffractometer is controlled to scan the crystal to be processed driven by the motion platform at the second diffraction peak position.

9. A crystal orientation processing device, characterized in that: The device comprises: an X-ray diffractometer, a cutter, a motion platform and a controller; The controller is respectively connected to the X-ray diffractometer, the cutter and the motion platform, and is used to perform the crystal orientation processing method according to any one of claims 1 to 8.

10. The crystal orientation processing device according to claim 9, characterized in that: The device also includes a housing; The motion platform comprises a rotating mechanism and a carrier platform; wherein the rotating mechanism is used to rotate around a first tilt axis and a second tilt axis; the crystal to be processed is placed on the rotating mechanism; The carrier is installed at the bottom of the housing and moves along a first horizontal direction and a second horizontal direction; wherein the first horizontal direction and the second horizontal direction are perpendicular to each other; the X-ray diffractometer and the rotating mechanism are mounted on the carrier; The cutter is fixed at the top inside the housing.

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