Microwave heat treatment apparatus and impedance matching method

Abstract

The invention discloses a microwave heat treatment device and an impedance matching method. The impedance matching method comprises the following steps: preliminarily adjusting the impedance of a tuner circuit between a microwave power supply and a chamber on the basis of pre-matched data for a heat treatment process; a step of applying microwave power from the microwave power source toward the chamber through the preliminarily adjusted tuner circuit; a step of measuring process data relating to the impedance of the chamber to which the microwave power is applied; a step of determining an impedance tuning value of the tuner circuit by comparing the process data and the pre-matching data; and a step of adjusting the impedance of the tuner circuit according to the impedance tuning value.

Description

Technical Field

[0001] The invention relates to a microwave heat treatment device and an impedance matching method between a microwave power source and a cavity in the microwave heat treatment device. Background Art

[0002] Semiconductor manufacturing processes are processes for manufacturing semiconductor elements on substrates (e.g., wafers), including exposure, vapor deposition, etching, ion implantation, cleaning, etc. In order to perform each manufacturing process, semiconductor manufacturing equipment for performing each process is provided in a clean room of the semiconductor manufacturing process, and process treatment is performed on the substrates put into the semiconductor manufacturing equipment.

[0003] Processes using plasma, such as etching and evaporation, are widely used in semiconductor manufacturing. Plasma processing is performed by placing a substrate at the bottom in a plasma processing space and applying voltage through an antenna located above along with supply of gas for plasma processing. On the other hand, a technique in which microwaves are applied from above is also introduced for heat treatment of the substrate.

[0004] The microwave heat treatment device performs heat treatment on the substrate by applying microwave power from a microwave power source located above to the chamber where the substrate is located. In order to effectively transmit microwave power to the chamber while minimizing reflected power, impedance matching between the microwave power source and the chamber is required.

[0005] For impedance matching, a tuner circuit is formed in the electrical path of the microwave power supply and the chamber. Generally, the tuner circuit measures the reflected power of the power supplied from the microwave power supply to the chamber, determines an impedance tuning value to minimize the reflected power, and adjusts the impedance of the tuner circuit to match the impedance tuning value. Impedance adjustment is performed using an element whose impedance is variable mainly by mechanical operation. As an impedance variable element, a variable vacuum capacitor (variable vacuum capacitor) which is a variable capacitor whose capacitance is adjusted by a mechanical drive device (e.g., a motor) can be used.

[0006] However, in the case of heating treatment using microwaves, the substrate is heated to the target temperature within one second at the fastest, but it takes 0.2 to 0.6 seconds to measure the reflected power, calculate the impedance tuning value, and operate the driver for impedance adjustment of the tuner circuit. Thus, when the conventional impedance matching method is applied to the microwave heat treatment device, the impedance tuning process takes a long time compared to the overall process time, so the power transmission efficiency decreases. Summary of the invention

[0007] The present invention is used to solve the existing problems and to provide a microwave heat treatment device and an impedance matching method which can quickly perform impedance matching.

[0008] The problems to be solved by the present invention are not limited to the problems mentioned above, and still other problems not mentioned will be clearly understood by those skilled in the art from the following description.

[0009] According to the present invention, the impedance matching method between a microwave power supply and a chamber in a microwave heat treatment device includes: a step of preliminarily adjusting the impedance of a tuner circuit between the microwave power supply and the chamber based on pre-matching data for a heat treatment process; a step of applying microwave power from the microwave power supply toward the chamber through the preliminarily adjusted tuner circuit; a step of measuring process data related to the impedance of the chamber to which the microwave power is applied; a step of determining an impedance tuning value of the tuner circuit by comparing the process data with the pre-matching data; and a step of adjusting the impedance of the tuner circuit according to the impedance tuning value.

[0010] According to an embodiment of the present invention, the pre-matching data may include a set of impedance tuning values ​​corresponding to process conditions associated with the thermal treatment.

[0011] According to an embodiment of the present invention, the process conditions include a frequency of the microwave power source, a height of a support pin supporting a substrate in the chamber, and a temperature of the chamber.

[0012] It may be that, according to an embodiment of the present invention, the step of preliminarily adjusting the impedance of the tuner circuit comprises the step of adjusting the impedance of the tuner circuit using one of the impedance tuning values ​​comprised in the set.

[0013] According to an embodiment of the present invention, the process data may include a height of a supporting pin supporting a substrate in the chamber and a temperature of the chamber.

[0014] It may be that, according to an embodiment of the present invention, the step of determining the impedance tuning value of the tuner circuit by comparing the process data and the pre-matching data includes: a step of determining whether the process data is included in an inner divided area of ​​the pre-matching data; when the process data is included in the inner divided area of ​​the pre-matching data, a step of determining the impedance tuning value corresponding to the process data by regression analysis of the pre-matching data; and when the process data is included in the outer divided area of ​​the pre-matching data, a step of determining the impedance tuning value of the tuner circuit that minimizes the reflected power by measuring the reflected power from the chamber.

[0015] It may be that, according to an embodiment of the present invention, the step of determining whether the process data is included in the range of the pre-matching data includes: the step of setting the inner divided area based on the points corresponding to the height of the support pin and the temperature of the chamber included in the pre-matching data; and the step of determining whether the points corresponding to the height and temperature of the support pin measured in the chamber are included in the inner divided area.

[0016] It may be that, according to an embodiment of the present invention, the internal divided regions are set by a convex hull algorithm or a concave hull algorithm.

[0017] It may be that, according to an embodiment of the present invention, the step of determining the impedance tuning value corresponding to the process data through regression analysis of the pre-matching data includes: the step of selecting points adjacent to the points corresponding to the measured height of the support pin and the measured temperature of the chamber; and the step of determining the impedance tuning value by weighted averaging the impedance tuning values ​​corresponding to the adjacent points.

[0018] It may be that according to an embodiment of the present invention, the process data included in the outer divided area of ​​the pre-matching data and the impedance tuning value of the tuner circuit for minimizing the reflected power are added to the pre-matching data.

[0019] The microwave heat treatment device according to the present invention comprises: a chamber having a processing space inside; a power supply device for supplying heat energy to the chamber; and a controller for controlling the power supply device. The power supply device comprises: a microwave power supply for supplying heat energy to the processing space; and a tuner circuit comprising a plurality of impedance elements arranged in a power path between the chamber and the microwave power supply. The controller comprises: a processor for adjusting the power of the microwave power supply and the impedance of the tuner circuit; and a memory for storing data related to matching of the tuner circuit. The processor preliminarily adjusts the impedance of the tuner circuit based on the pre-matching data for the heat treatment process stored in the memory, applies microwave power from the microwave power supply to the chamber through the preliminarily adjusted tuner circuit, measures process data related to the impedance of the chamber to which the microwave power is applied, determines the impedance tuning value of the tuner circuit by comparing the process data with the pre-matching data, and adjusts the impedance of the tuner circuit according to the impedance tuning value.

[0020] The microwave heat treatment device according to the present invention includes: a chamber having a processing space for a substrate inside; a power supply device for supplying heat energy to the chamber; and a controller for controlling the power supply device. The power supply device includes: a microwave power supply for supplying heat energy to the processing space; and a tuner circuit including a plurality of impedance elements arranged in a power path between the chamber and the microwave power supply. The chamber includes: a chuck arranged below the chamber; a support pin arranged above the chuck to support the substrate; a temperature sensor for measuring the temperature inside the chamber; and a height sensor for measuring the height of the support pin. The controller includes: a processor for adjusting the power of the microwave power supply and the impedance of the tuner circuit; and a memory for storing data related to the matching of the tuner circuit. The processor preliminarily adjusts the impedance of the tuner circuit based on pre-matching data stored in the memory including a set of impedance tuning values ​​corresponding to process conditions related to the heat treatment, wherein the process conditions include the frequency of the microwave power source, the height of a support pin supporting a substrate in the chamber, and the temperature of the chamber, and applies microwave power from the microwave power source toward the chamber through the preliminarily adjusted tuner circuit, and measures process data including the height of the support pin and the temperature of the chamber by the height sensor and the temperature sensor, and determines whether a point corresponding to the height and temperature of the support pin measured in the chamber is included in an inner divided area determined based on the point corresponding to the height of the support pin and the temperature of the chamber included in the pre-matching data, and in the process data including In the case where the pre-matching data is included in the inner divided area, the impedance tuning value corresponding to the process data is determined by regression analysis of the pre-matching data, and in the case where the process data is included in the outer divided area of ​​the pre-matching data, the impedance tuning value of the tuner circuit that minimizes the reflected power is determined by measuring the reflected power from the chamber, and the impedance of the tuner circuit is adjusted according to the impedance tuning value, and in the case where the process data is included in the outer divided area of ​​the pre-matching data, the process data included in the outer divided area of ​​the pre-matching data and the impedance tuning value of the tuner circuit that minimizes the reflected power are attached to the pre-matching data, and the pre-matching data attached with the impedance tuning value is stored in the memory.

[0021] According to the present invention, impedance matching can be quickly achieved by preliminarily adjusting the impedance of the tuner circuit in advance using pre-matching data and then adjusting the impedance based on the comparison result between the process data measured later and the pre-matching data.

[0022] However, the effects of the present invention are not limited to the above-mentioned effects, and still other effects not mentioned will be clearly understood by those having ordinary knowledge in the technical field to which the present invention belongs from the following description and drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] Figure 1 A microwave heat treatment device according to the present invention is shown.

[0024] Figure 2 This is a diagram for explaining a conventional impedance matching process.

[0025] Figure 3 is a diagram for explaining an impedance matching process according to the present invention.

[0026] Figure 4 is a flow chart showing an impedance matching method according to the present invention.

[0027] Figure 5 It is a graph that visually represents the pre-matching data.

[0028] Figure 6 is a flow chart illustrating a process for determining an impedance tuning value.

[0029] Figure 7 is a flowchart showing a procedure for determining whether process data is included in an internal divided area of ​​pre-matching data.

[0030] Figure 8 is a flow chart illustrating a process of determining impedance tuning values ​​corresponding to process data through regression analysis.

[0031] Fig. 9 This is a diagram for explaining the impedance matching process when the measured process data is included in the internal division area of ​​the pre-matching data.

[0032] Fig.10 This is a diagram for explaining the impedance matching process when the measured process data is included in the external division area of ​​the pre-matching data.

[0033] Fig.11 1 is a flowchart showing the overall impedance matching and updating process of the pre-matching data.

[0034] Fig.12 It is a diagram for explaining the process of updating the pre-matching data.

[0035] (Explanation of Reference Numerals)

[0036] 1: Microwave heat treatment device

[0037] 10: Chamber

[0038] 20: Power supply device

[0039] 270: Microwave power supply

[0040] 290: Tuner Circuit

[0041] 30: Controller DETAILED DESCRIPTION

[0042] Hereinafter, the embodiments of the present invention will be described in detail with reference to the attached drawings so that a person with ordinary knowledge in the technical field to which the present invention belongs can easily implement the present invention. The present invention can be implemented in various forms and is not limited to the embodiments described herein.

[0043] In order to clearly describe the present invention, parts not related to the description are omitted, and the same or similar components are denoted by the same reference numerals throughout the entire specification.

[0044] In each embodiment, components having the same structure are denoted by the same reference numerals and described only in a representative embodiment, and only structures different from the representative embodiment are described in other embodiments.

[0045] Throughout the specification, when it is said that any part is "connected (or coupled)" to other parts, this includes not only the case of "direct connection (or coupling)" but also the case of "indirect connection (or coupling)" via other parts. In addition, when it is said that any part "includes" any constituent element, unless there is a special description to the contrary, this means that other constituent elements are not excluded and other constituent elements may be included.

[0046] Unless otherwise defined, all terms used herein, including technical or scientific terms, have the same meaning as those generally understood by a person having ordinary knowledge in the technical field to which the present invention belongs. Terms such as terms defined in commonly used dictionaries should be interpreted as having the same meaning as that in the context of the related technology, and in this application, unless explicitly defined, shall not be interpreted as ideal or overly formal meanings.

[0047] The present invention relates to a microwave heat treatment device 1 and an impedance matching method between a microwave power source 270 and a chamber 10 in the microwave heat treatment device 1, and more specifically to a microwave heat treatment device 1 capable of performing impedance tuning at high speed and an impedance matching method.

[0048] Figure 1The microwave heat treatment device 1 according to the present invention is shown. The microwave heat treatment device 1 can perform a process of heating the substrate W using microwave power. In addition, the microwave heat treatment device 1 can perform plasma treatment (e.g., dry etching, evaporation) together with the heat treatment of the substrate W. That is, the microwave heat treatment device can perform the plasma treatment process alternately with the heat treatment of the substrate W.

[0049] The microwave heat treatment apparatus 1 according to the embodiment of the present invention includes a chamber 10 having a processing space PZ for a substrate W therein, a power supply device 20 for supplying heat energy to the chamber 10 , and a controller 30 for controlling the power supply device 20 .

[0050] The chamber 10 includes a chuck 110 disposed below the chamber 10 and support pins 120 supporting the substrate W above the chuck 110. The chamber 10 also includes a height sensor 140 for measuring the height of the support pins 120 and a temperature sensor 130 for measuring the temperature of the processing space PZ inside the chamber 10.

[0051] A chuck 110 for supporting the substrate W may be disposed inside the chamber 10, and the substrate W may be supported by supporting pins 120 coupled to the chuck 110. A heater and a cooling flow path for adjusting the temperature of the substrate W may be formed inside the chuck 110. In addition, a lower electrode for generating plasma in the processing space PZ may be disposed inside the chuck 110.

[0052] The support pins 120 support the substrate W at the bottom. The support pins 120 may be configured to be three or more in order to stably support the substrate W. The support pins 120 may be raised or lowered by a driving mechanism (e.g., a motor) configured at the bottom. That is, the height of the support pins 120 may be changed. The height of the support pins 120 may be determined to be a height that optimizes the heating process for the substrate W. A height sensor 140 for measuring the height of the support pins 120 is provided around the support pins 120. The height sensor 140 may be an optical sensor that is provided on the chuck 110 and irradiates light to measure the height of the support pins 120. In addition, the height sensor 140 may be a sensor that is provided in a motor that raises and lowers the support pins 120 and measures the height of the support pins 120 by the driving amount of the motor. The temperature sensor 130 measures the temperature of the processing space PZ in the chamber 10. Data measured by the temperature sensor 130 and the height sensor 140 are provided to the processor 310. The temperature information measured by the temperature sensor 130 and the height data measured by the height sensor 140 are included in the subsequent process data.

[0053] An inner space is formed outside the microwave heat treatment device 1 by the outer wall 210, and the inner support 212 inside the outer wall 210 in the chamber 10 encloses the processing space PZ. In addition, the inner support 212 can support the support member 220 at the bottom. The processing space PZ is formed by the inner support 212, the support member 220, and the window 230.

[0054] The power supply device 20 includes a microwave power supply 270 that supplies heat energy to the processing space PZ and a tuner circuit 290 including a plurality of impedance elements provided in a power path between the chamber 10 and the microwave power supply 270. The power supply device 20 applies power required for processing the substrate W in the processing space PZ. The power supply device 20 may generally include a plasma power supply device that applies power for forming plasma and a microwave power supply device that applies microwaves for heat treatment of the substrate W.

[0055] The plasma power supply device may generally include an upper electrode 250 and an RF power supply 280 that supplies RF power to the upper electrode 250. Although not specifically shown, a matching circuit for impedance matching and a circuit for power transmission may be provided between the RF power supply 280 and the upper electrode 250. The upper electrode 250 may be disposed above the window 230. If a process gas for processing the substrate W is supplied through the gas supply line 260, plasma is formed in the processing space PZ through the upper electrode 250 and the lower electrode provided on the chuck 110. The plasma formed by the plasma power supply device may etch a specific substance of the substrate W.

[0056] The microwave power supply device supplies power for heat treatment of the substrate W to the plasma processing space PZ. The microwave power supply device may generally include a microwave power supply 270, a tuner circuit 290, a microwave waveguide 246, and a microwave antenna 240. The microwave generated by the microwave power supply 270 is transmitted to the microwave antenna 240 through the tuner circuit 290 and the microwave waveguide 246.

[0057] The microwave antenna 240 can emit microwaves to the processing space PZ. Although the microwaves can also be emitted to the normal pressure space above the antenna, a metal plate that reflects microwaves is provided above, so heating due to microwave absorption does not occur. In this article, microwaves refer to electromagnetic waves with a frequency band of 300MHz to 300GHz that is shorter than radio waves and longer than infrared rays. Microwaves have the characteristic of causing reactions to other specific substances while transmitting specific substances, so they can be used to heat the substrate W.

[0058] The tuner circuit 290 includes a plurality of impedance elements disposed in the power path between the chamber 10 and the microwave power source 270. The tuner circuit 290 can adjust the impedance of the power path between the microwave power source 270 and the chamber 10 to achieve maximum power efficiency from the microwave power source 270 to the chamber 10. The tuner circuit 290 may include a plurality of variable impedance elements (variable capacitors, variable inductors).

[0059] The controller 30 controls the overall operation of the microwave heat treatment device 1. In particular, the controller 30 can adjust the power of the microwave power supply 270 and the impedance of the tuner circuit 290, and store data required for the operation of the microwave heat treatment device 1. The controller 30 includes a processor 310 for adjusting the power of the microwave power supply 270 and the impedance of the tuner circuit 290, and a memory 320 for storing data related to the matching of the tuner circuit 290. The impedance tuning method described below can be performed by the controller 30.

[0060] The processor 310 can perform operations and data processing for the operation of the microwave heat treatment device 1. The processor 310 can be composed of one or more processing circuits. The processor 310 can control the microwave heat treatment device 1 by running commands for operating the operating system (OS) and driving related programs of the microwave heat treatment device 1. The processor 310 can also be a central processing unit (CPU), or it can be a dedicated processor designed for the microwave heat treatment device 1.

[0061] The memory 320 stores data and commands for the operation of the microwave heat treatment device 1. The memory 320 can be structured in a hierarchical manner. The memory 320 can include a cache memory, a volatile memory such as a dynamic random access memory (DRAM), a solid state drive (SSD), a hard disk drive (HDD), and other non-volatile memories.

[0062] Figure 2 This is a diagram for explaining a conventional impedance matching process. Figure 2 The microwave characteristics of the chamber 10 according to time and the impedance matching steps according to this are shown. Figure 2 After the microwave power source 270 applies power to the chamber 10, a certain time T settleDuring this period, the microwaves in the chamber 10 are unstable. In the existing impedance matching method, the step of calculating the tuning value for impedance matching (S21), the step of adjusting the impedance of the variable element to match the tuning value (S22), and the step of sensing the feedback according to the impedance adjustment (S23) are performed. After that, the step of calculating the tuning value for impedance matching (S24), the step of adjusting the impedance of the variable element to match the tuning value (S25), and the step of sensing the feedback according to the impedance adjustment (S26) are performed again. After the microwaves in the chamber 10 are stable, the step of calculating the tuning value for impedance matching (S27) and the step of adjusting the impedance of the variable element to match the tuning value (S28) are performed. During the time T when the microwaves are unstable settle During this period, the transmission characteristics of the microwaves change rapidly due to the fluctuation of the microwaves transmitted to the chamber 10 and the impedance change of the tuner circuit 290 .

[0063] In the step of adjusting the impedance (S22, S25, S28), the processor 310 starts the motor (driving device) to adjust the variable impedance element to match the calculated impedance tuning value. In the step of sensing feedback (S23, S26), the work of measuring the reflected power level according to the changed impedance of the tuner circuit 290 is implemented. The time for heat treatment of a substrate using microwaves usually takes 1 second to 3 seconds, but since it takes 0.2 seconds to 0.6 seconds to measure the reflected power level and drive the motor for impedance adjustment, it takes too long time for impedance matching. The present invention provides an impedance matching method that can shorten the time for impedance matching in a heat treatment process of a substrate W using microwaves.

[0064] Figure 3 2 is a diagram for explaining an impedance matching process according to the present invention. According to the present invention, impedance matching by a tuner circuit 290 may be performed before microwaves are applied to the chamber 10. Figure 3 , before microwaves are applied to the chamber 10, a step of determining an impedance tuning value based on the pre-matching data 1000 (S31) and a step of adjusting the impedance of the tuner circuit 290 to match the impedance tuning value (S32) are performed. The pre-matching data 1000 includes a set of impedance tuning values ​​set for each process condition. The processor 310 can measure the current process conditions of the chamber 10, determine the impedance tuning value matching the current process conditions using the pre-matching data 1000, and pre-adjust the impedance of the tuner circuit 290. Thereafter, the microwave power generated by the microwave power supply 270 is applied to the chamber 10, and the processor 310 can implement impedance matching based on regression analysis using the pre-matching data 1000 (S33).

[0065] Regression analysis is a method for predicting future values ​​based on existing learned or measured values. The model used for regression analysis can be diverse, and linear regression can be used, for example. According to the present invention, the processor 310 can determine the impedance tuning value that matches the current process based on the impedance tuning data (pre-matching data) of each process condition obtained through various processes. In this case, compared with the case where the impedance matching value is determined by feeding back the reflected power as in the existing impedance matching, the time used for impedance tuning can be shortened.

[0066] Figure 4 3 is a flowchart showing an impedance matching method according to the present invention. The impedance matching method according to the present invention can be executed in the microwave heat treatment device 1 by the processor 310. The impedance matching method between the microwave power source 270 and the chamber 10 in the microwave heat treatment device 1 according to the present invention includes a step (S410) of preliminarily adjusting the impedance of the tuner circuit 290 between the microwave power source 270 and the chamber 10 based on the pre-matching data 1000 for the heat treatment process, a step (S420) of applying microwave power from the microwave power source 270 toward the chamber 10 through the preliminarily adjusted tuner circuit 290, a step (S430) of determining process data related to the impedance of the chamber 10 to which the microwave power is applied, a step (S440) of determining the impedance tuning value of the tuner circuit by comparing the process data and the pre-matching data, and a step (S450) of adjusting the impedance of the tuner circuit 290 according to the impedance tuning value.

[0067] In step S410, the processor 310 preliminarily adjusts the impedance of the tuner circuit 290 between the microwave power source 270 and the chamber 10 based on the pre-matching data 1000 for the heat treatment process. The pre-matching data 1000 includes a set of impedance tuning values ​​corresponding to process conditions related to the heat treatment. The process conditions include the frequency 1100 of the microwave power source 270, the height 1200 of the support pins 120 supporting the substrate in the chamber 10, and the temperature 1300 of the chamber 10. Figure 5 is a graph that visually represents the pre-matched data. Figure 5, respectively define impedance matching tuning values ​​C1, C2, C3 according to the frequency 1100, the height 1200 of the support pin 120, and the temperature 1300 of the chamber 10. In this article, the impedance matching tuning value is the optimal impedance value for currently matching the microwave power source 270 and the chamber 10, that is, the target impedance value of the tuner circuit 290. The processor 310 can obtain information about the process conditions of the chamber 10 before the process, determine the impedance tuning value matching the process conditions from the pre-matching data 1000, and adjust the impedance of the tuner circuit 290 according to the impedance tuning value. The processor 310 can use the impedance tuning value that is most similar to the current process conditions in the pre-matching data. That is, the step (S410) of preliminarily adjusting the impedance of the tuner circuit 290 can include the step of adjusting the impedance of the tuner circuit 290 using one of the impedance tuning values ​​included in the set of impedance tuning values.

[0068] In step S420, the processor 310 applies microwave power from the microwave power source 270 toward the chamber 10 through the preliminarily adjusted tuner circuit 290. The processor 310 may drive the microwave power source 270 to supply microwave power to the chamber 10 through the tuner circuit 290 preliminarily adjusted in step S410.

[0069] In step S430, the processor 310 measures process data related to the impedance of the chamber 10 to which the microwave power is applied. The process data includes the height of the support pins 120 supporting the substrate W in the chamber 10 and the temperature of the chamber 10. The processor 310 may obtain the height of the support pins 120 measured by the height sensor 140 and the temperature of the chamber 10 measured by the temperature sensor 130.

[0070] In step S440, the processor 310 may determine the impedance tuning value of the tuner circuit 290 by comparing the process data with the pre-matching data 1000. The processor 310 obtains the process data during the application of microwave power to the chamber 10 after the preliminary impedance matching, and compares the process data with the pre-matching data 1000 to determine the impedance tuning value for additional impedance tuning.

[0071] Figure 62 is a flowchart showing a process for determining an impedance tuning value. The step S440 of determining the impedance tuning value of the tuner circuit 290 by comparing the process data with the pre-matching data 1000 includes a step (S610) of determining whether the process data is included in the inner sub-region ID of the pre-matching data 1000, a step (S620) of determining the impedance tuning value corresponding to the process data by regression analysis on the pre-matching data 1000 when the process data is included in the inner sub-region ID of the pre-matching data 1000, and a step (S630) of determining the impedance tuning value of the tuner circuit 290 that minimizes the reflected power by measuring the reflected power from the chamber 10 when the process data is included in the outer sub-region ED of the pre-matching data 1000.

[0072] In step S610 , the processor 310 determines whether process data is included in the internal divided area ID of the pre-matching data 1000 .

[0073] Figure 7 1 is a flowchart showing a process for determining whether process data is included in the inner divided region ID of the pre-matching data 1000. The step (S610) of determining whether process data is included in the range of the pre-matching data 1000 includes the step (S710) of setting the inner divided region ID based on the point corresponding to the height of the support pin 120 and the temperature of the chamber 10 included in the pre-matching data 1000 and the step (S720) of determining whether the measurement point SP1 corresponding to the height of the support pin 120 and the temperature of the chamber 10 measured in the chamber 10 is included in the inner divided region.

[0074] Fig. 9 This is a diagram for explaining the impedance matching process when the measured process data is included in the internal division area of ​​the pre-matching data. Fig.10 1000 is a diagram for explaining the impedance matching process when the measured process data is included in the outer sub-area of ​​the pre-matching data. The pre-matching data 1000 is composed of impedance matching tuning values ​​C1, C2, and C3 according to the height 1200 of the support pin 120 and the temperature 1300 of the chamber 10. The inner sub-area ID is defined by points P1 to P4 defined by the height 1200 of the support pin 120 and the temperature 1300 of the chamber 10. Fig. 9, the horizontal axis corresponds to the height of the support pin 120, the vertical axis corresponds to the temperature of the chamber 10, and is defined by points P1 to P4 corresponding to the height 1200 of the support pin 120 and the temperature 1300 of the chamber 10 included in the pre-matching data 1000. The inner area of ​​the line connecting the points P1 to P4 is defined as the internal division area ID, and the outside of the internal division area ID is defined as the external division area ED. The processor 310 can determine whether the measurement point SP1 corresponding to the process data (the height of the support pin 120 measured in the chamber 10 and the temperature of the chamber 10) is included in the internal division area ID. The internal division area ID can be set by a convex hull algorithm or a concave hull algorithm. The convex hull algorithm and the concave hull algorithm are algorithms for generating an area including an arbitrary point. The convex hull algorithm has a tendency to overestimate the internal region ID, while the concave hull algorithm can generate the internal region ID by inputting appropriate parameters.

[0075] In step S620 , when the process data is included in the internal region ID of the pre-matching data 1000 , the processor 310 determines an impedance tuning value corresponding to the process data through regression analysis on the pre-matching data 1000 . Figure 8 1 is a flowchart showing a process of determining an impedance tuning value corresponding to process data by regression analysis. The step (S620) of determining an impedance tuning value corresponding to process data by regression analysis on pre-matching data 1000 includes a step (S810) of selecting points P1 to P4 adjacent to a measurement point SP1 corresponding to a measured height of a support pin 120 and a measured temperature of a chamber 10 and a step (S820) of determining an impedance tuning value by weighted average of impedance tuning values ​​corresponding to adjacent points P1 to P4.

[0076] refer to Fig. 9In step S901, the existing matching data (pre-matching data) is stored in the memory 320, and the preliminary impedance adjustment of the tuner circuit 290 is performed using the pre-matching data 1000. If microwaves are applied to the chamber 10 by the microwave power supply 270, the sensor value (process data) included in the internal sub-domain ID is obtained in step S902. In this case, the impedance matching of the tuner circuit 290 is performed by regression analysis based on the pre-matching data. At this time, the impedance tuning value can select points P1 to P4 adjacent to the measurement point SP1 corresponding to the measured process data, and the current impedance tuning value is determined by the weighted average of the impedance tuning values ​​of each point. At this time, the weighted value used for the calculation of the weighted average can be determined according to the distance between the measurement point SP1 and each point P1 to P4. In step S903, the impedance tuning value determined in this way can be added to the pre-matching data and stored in the memory 320.

[0077] In step S630, when the process data is included in the outer divided area ED of the pre-matching data 1000, the processor 310 determines the impedance tuning value of the tuner circuit 290 that minimizes the reflected power by measuring the reflected power from the chamber 10. When the measured process data deviates from the range of the pre-matching data 1000, the processor 310 can calculate the impedance tuning value based on the measurement of the reflected power in the same manner as in the conventional matching method. Fig.10 In step S1001, the existing matching data (pre-matching data) is stored in the memory 320, and the preliminary impedance adjustment of the tuner circuit 290 using the pre-matching data 1000 is performed. If microwaves are applied to the chamber 10 by the microwave power source 270, the sensor value (process data) included in the outer sub-region ED is obtained in step S1002. In the case where the measurement point SP2 corresponding to the obtained process data is not included in the inner sub-region ID but included in the outer sub-region ED, the processor 310 can calculate the impedance tuning value based on the measurement of the reflected power in the same way as the existing matching method. In step S1003, the impedance tuning value determined in this way can be added to the pre-matching data and stored in the memory 320. At this time, the inner sub-region ID is extended to include the measurement point SP2. That is, the process data included in the outer sub-region ED of the pre-matching data 1000 and the impedance tuning value of the tuner circuit 290 that minimizes the reflected power are added to the pre-matching data 1000.

[0078] In step S450 , processor 310 adjusts the impedance of tuner circuit 290 according to the impedance tuning value determined in step S440 .

[0079] Fig.111 is a flowchart showing the overall impedance matching and updating process of the pre-matching data 1000. The impedance matching method according to the present invention includes a step (S1110) of preliminarily adjusting the impedance of the tuner circuit 290 based on the pre-matching data 1000 including a set of impedance tuning values ​​corresponding to process conditions related to the heat treatment stored in the memory 320, a step (S1120) of applying microwave power from the microwave power supply 270 toward the chamber 10 through the preliminarily adjusted tuner circuit 290, a step (S1130) of measuring process data including the height of the support pin and the temperature of the chamber from the height sensor 140 and the temperature sensor 130, a step (S1140) of determining whether a point corresponding to the height and temperature of the support pin 120 measured in the chamber 10 is included in the internal divided area ID determined based on the point corresponding to the height and temperature of the support pin 120 included in the pre-matching data, and a step (S1150) of determining whether a point corresponding to the height and temperature of the support pin 120 measured in the chamber 10 is included in the internal divided area ID determined based on the point corresponding to the height and temperature of the support pin 120 included in the pre-matching data, and a step (S1160) of determining whether a point corresponding to the height and temperature of the support pin 120 included in the pre-matching data is included in the internal divided area ID determined based on the pre-matching data 1000. ID, a step (S1150) of determining an impedance tuning value corresponding to the process data by performing a regression analysis on the pre-matching data 1000, a step (S1170) of determining an impedance tuning value of the tuner circuit 290 for minimizing reflected power by measuring the reflected power from the chamber 10 when the process data is included in the outer divided area ED of the pre-matching data 1000, steps (S1160, S1180) of controlling to adjust the impedance of the tuner circuit 290 according to the impedance tuning value, and a step (S1190) of adding the process data included in the outer divided area ED of the pre-matching data 1000 and the impedance tuning value of the tuner circuit 290 for minimizing reflected power to the pre-matching data 1000 when the process data is included in the outer divided area ED of the pre-matching data 1000, and storing the pre-matching data 1000 with the added impedance tuning value in the memory 320.

[0080] Fig.12 1000 is a diagram for explaining a process of updating the pre-matching data 1000. Fig.12 (a), in the existing pre-matching data 1000, the internal area ID is formed by the impedance tuning value according to the frequency 1100, the height 1200 of the support pin 120, and the temperature 1300 of the chamber 10. Fig.12 (a), if the measured process data point SP does not belong to the internal sub-area ID, the impedance tuning value newly calculated from the corresponding process data is stored in the pre-matching data 1000. Fig.12 (b), the internal divided area ID of the updated pre-matching data 1000 includes a point SP corresponding to the additional process data.

[0081] This embodiment and the drawings attached to this specification only explicitly illustrate a part of the technical concept included in the present invention. It is obvious that all the modified examples and specific embodiments that can be easily inferred by technicians in this field within the scope of the technical concept included in the specification and drawings of the present invention are included in the scope of rights of the present invention.

[0082] Therefore, the concept of the present invention is not limited to the described embodiments, and not only the claims described below, but also all equivalent or equivalent modifications to the claims belong to the scope of the concept of the present invention.

Claims

1. An impedance matching method is an impedance matching method between a microwave power source and a chamber in a microwave heat treatment device, wherein: The impedance matching method comprises: The step of preliminarily adjusting the impedance of a tuner circuit between the microwave power source and the chamber based on pre-matching data for a thermal treatment process; The step of applying microwave power from the microwave power supply toward the chamber through the preliminarily adjusted tuner circuit; a step of determining process data related to the impedance of the chamber to which the microwave power is applied; The step of determining an impedance tuning value of the tuner circuit by comparing the process data and the pre-matching data; and The step of adjusting the impedance of the tuner circuit according to the impedance tuning value.

2. The impedance matching method according to claim 1, wherein: The pre-matching data includes a set of impedance tuning values ​​corresponding to process conditions associated with the thermal process.

3. The impedance matching method according to claim 2, wherein: The process conditions include a frequency of the microwave power source, a height of a support pin supporting a substrate in the chamber, and a temperature of the chamber.

4. The impedance matching method according to claim 3, wherein: The step of preliminarily adjusting the impedance of the tuner circuit comprises the step of adjusting the impedance of the tuner circuit using one of the impedance tuning values ​​included in the set.

5. The impedance matching method according to claim 4, wherein: The process data includes a height of support pins supporting a substrate in the chamber and a temperature of the chamber.

6. The impedance matching method according to claim 5, wherein: The step of determining the impedance tuning value of the tuner circuit by comparing the process data and the pre-matching data comprises: The step of determining whether the process data is included in the inner divided area of ​​the pre-matching data; In a case where the process data is included in an inner region of the pre-matching data, determining an impedance tuning value corresponding to the process data by regression analysis on the pre-matching data; and A step of determining an impedance tuning value of the tuner circuit that minimizes the reflected power by measuring reflected power from the chamber when the process data is included in an outer divided area of ​​the pre-matching data.

7. The impedance matching method according to claim 6, wherein: The step of determining whether the process data is included in the range of the pre-matching data comprises: A step of setting the inner divided areas based on points corresponding to the height of the support pin and the temperature of the chamber included in the pre-matching data; and A step of determining whether a point corresponding to the height and temperature of the support pin measured in the chamber is included in the inner divided area.

8. The impedance matching method according to claim 7, wherein: The inner divided regions are set by a convex hull algorithm or a concave hull algorithm.

9. The impedance matching method according to claim 6, wherein: The step of determining the impedance tuning value corresponding to the process data by regression analysis of the pre-matching data comprises: A step of selecting a point adjacent to a point corresponding to a measured height of the support pin and a measured temperature of the chamber; and The step of determining the impedance tuning value by weighted average of the impedance tuning values ​​corresponding to the adjacent points.

10. The impedance matching method according to claim 6, wherein: The process data included in the outer divided area of ​​the pre-matching data and the impedance tuning value of the tuner circuit at which the reflected power is minimized are appended to the pre-matching data.

11. A microwave heat treatment device, wherein: include: a chamber having a processing space therein; an electric power supply device for supplying heat energy to the chamber; as well as a controller for controlling the power supply device, The power supply device comprises: a microwave power source for providing heat energy to the processing space; and a tuner circuit including a plurality of impedance elements disposed in a power path between the chamber and the microwave power source, The controller comprises: a processor to adjust the power of the microwave power supply and the impedance of the tuner circuit; and a memory storing data related to matching of the tuner circuit, The processor preliminarily adjusts the impedance of the tuner circuit based on pre-matching data for a thermal process stored in the memory, applying microwave power from the microwave power source toward the chamber through the preliminarily adjusted tuner circuit, determining process data related to the impedance of the chamber to which the microwave power is applied, determining an impedance tuning value of the tuner circuit by comparing the process data and the pre-matching data, The impedance of the tuner circuit is adjusted according to the impedance tuning value.

12. The microwave heat treatment device according to claim 11, wherein: The pre-matching data includes a set of impedance tuning values ​​corresponding to process conditions associated with the thermal process.

13. The microwave heat treatment device according to claim 12, wherein: The process conditions include a frequency of the microwave power source, a height of a support pin supporting a substrate in the chamber, and a temperature of the chamber.

14. The microwave heat treatment device according to claim 13, wherein: The processor adjusts the impedance of the tuner circuit using one of the impedance tuning values ​​included in the set.

15. The microwave heat treatment device according to claim 14, wherein: The process data includes a height of support pins supporting a substrate in the chamber and a temperature of the chamber.

16. The microwave heat treatment device according to claim 15, wherein: The processor determines whether the process data is included in the inner divided area of ​​the pre-matching data, In a case where the process data is included in the internal area of ​​the pre-matching data, determining an impedance tuning value corresponding to the process data by regression analysis on the pre-matching data, In a case where the process data is included in the outer divided area of ​​the pre-matching data, an impedance tuning value of the tuner circuit that minimizes the reflected power is determined by measuring the reflected power from the chamber.

17. The microwave heat treatment device according to claim 16, wherein: the processor setting the inner divided area based on points corresponding to the height of the support pin and the temperature of the chamber included in the pre-matching data, And it is determined whether a point corresponding to the height and temperature of the support pin measured in the chamber is included in the inner divided area.

18. The microwave heat treatment device according to claim 17, wherein: The inner divided regions are set by a convex hull algorithm or a concave hull algorithm.

19. The microwave heat treatment device according to claim 16, wherein: The process data included in the outer divided area of ​​the pre-matching data and the impedance tuning value of the tuner circuit at which the reflected power is minimized are appended to the pre-matching data.

20. A microwave heat treatment device, wherein: include: A chamber having a processing space for a substrate therein; an electric power supply device for supplying heat energy to the chamber; as well as a controller for controlling the power supply device, The power supply device comprises: a microwave power source for providing heat energy to the processing space; and a tuner circuit including a plurality of impedance elements disposed in a power path between the chamber and the microwave power source, The chamber comprises: A chuck is disposed below the chamber; A supporting pin is disposed above the chuck to support the substrate; a temperature sensor for measuring the temperature inside the chamber; and a height sensor, measuring the height of the support pin, The controller comprises: a processor to adjust the power of the microwave power supply and the impedance of the tuner circuit; and a memory storing data related to matching of the tuner circuit, the processor preliminarily adjusting the impedance of the tuner circuit based on pre-matching data stored in the memory including a set of impedance tuning values ​​corresponding to process conditions related to thermal processing, wherein the process conditions include a frequency of the microwave power source, a height of support pins supporting a substrate in the chamber, and a temperature of the chamber, and applying microwave power from the microwave power source toward the chamber through the preliminarily adjusted tuner circuit, and measuring process data including the height of the support pin and the temperature of the chamber by the height sensor and the temperature sensor, and determining whether a point corresponding to the height and temperature of the support pin measured in the chamber is included in an inner divided area determined based on the points corresponding to the height of the support pin and the temperature of the chamber included in the pre-matching data, and, in the case where the process data is included in the inner region of the pre-matching data, determining an impedance tuning value corresponding to the process data by regression analysis on the pre-matching data, and determining an impedance tuning value of the tuner circuit that minimizes the reflected power by measuring the reflected power from the chamber when the process data is included in the outer divided area of ​​the pre-matching data, and adjusting the impedance of the tuner circuit according to the impedance tuning value, And in a case where the process data is included in an outer divided area of ​​the pre-matching data, the process data included in the outer divided area of ​​the pre-matching data and the impedance tuning value of the tuner circuit for minimizing the reflected power are appended to the pre-matching data, and the pre-matching data appended with the impedance tuning value are stored in the memory.

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