Surface acoustic wave resonance device and forming method thereof

Abstract

The invention discloses a surface acoustic wave resonance device and a forming method thereof. An intermediate layer on the substrate; a piezoelectric layer on the intermediate layer; the electrode structure is located on the piezoelectric layer and comprises a first spacer region, an overlapping region and a second spacer region, and the overlapping region comprises a first edge region, a middle region and a second edge region; a protective layer covering the electrode structure; the isolation layer is positioned on the protection layer and is provided with an opening for exposing the protection layer; the load structure is located on the isolation layer and comprises a first load part of which the projection is located in the first edge area; the projection of the second load part is located in the second edge area. An opening in the isolation layer exposes the middle area, and load structures are additionally arranged above the two sides of the opening, so that the sound velocity of the first edge area and the sound velocity of the second edge area are smaller than the sound velocity of the middle area, and then a piston mode is excited downwards to restrain a high-order transverse parasitic mode; the isolation layer can also prevent device structure failure caused by electric breakdown. The protection layer can prevent corrosion and oxidation caused by the electrode structure.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to a surface acoustic wave resonance device and a method for forming the same. Background Art

[0002] The RF front-end chips of wireless communication devices include power amplifiers, antenna switches, RF filters, multiplexers, and low-noise amplifiers, etc. Among them, RF filters include piezoelectric surface acoustic wave (SAW) filters, piezoelectric bulk acoustic wave (BAW) filters, micro-electro-mechanical system (MEMS) filters, integrated passive devices (IPD) filters, etc.

[0003] The quality factor (Q value) of the SAW resonator is relatively high. The RF filter made of SAW resonator has low insertion loss and high out-band rejection, that is, SAW filter, which is the mainstream RF filter used in wireless communication devices such as mobile phones and base stations.

[0004] However, there are still many problems with surface acoustic wave resonator devices. Summary of the invention

[0005] The problem solved by the present invention is to provide a surface acoustic wave resonance device and a method for forming the same, so as to suppress high-order transverse parasitic modes.

[0006] To solve the above problems, the technical solution of the present invention provides a surface acoustic wave resonance device, comprising: a substrate; an intermediate layer, the intermediate layer is located on the substrate; a piezoelectric layer, the piezoelectric layer is located on the intermediate layer, and an electrode structure, the electrode structure is located on the piezoelectric layer; wherein the electrode structure comprises: a first bus and a second bus extending along a first direction and arranged in parallel along a second direction, the first direction being perpendicular to the second direction; a plurality of first electrode strips connected to the first bus, the plurality of first electrode strips being arranged in parallel along the first direction; a plurality of second electrode strips connected to the second bus, the plurality of second electrode strips being arranged in parallel along the first direction, the first electrode strips and the second electrode strips being staggered; a first spacing area, an overlap area and a second spacing area arranged in sequence along the second direction are included between the first bus and the second bus, the first electrode strips and the second electrode strips in the overlap area overlap along the first direction, the overlap area comprises a first edge area, a middle area and a second edge region, wherein the first edge region is located between the first spacing region and the middle region, and the second edge region is located between the second spacing region and the middle region; a protective layer, wherein the protective layer is located on the piezoelectric layer, and the protective layer covers the surface of the electrode structure; an isolation layer, wherein the isolation layer is located on the protective layer, and the isolation layer has an opening, wherein the opening exposes the protective layer, and wherein the projection of the opening toward the substrate coincides with the middle region, and the projection of the isolation layer toward the substrate is located at least in the first edge region and the second edge region, and is not located in the middle region; a load structure, wherein the load structure comprises: a first load portion, wherein the projection of the first load portion toward the substrate is located in the first edge region, and the sound velocity of the first edge region is smaller than the sound velocity of the middle region; and a second load portion, wherein the projection of the second load portion toward the substrate is located in the second edge region, and the sound velocity of the second edge region is smaller than the sound velocity of the middle region.

[0007] Optionally, the material of the piezoelectric layer includes: lithium tantalate, lithium niobate or aluminum nitride.

[0008] Optionally, the main modal wave excited by the electrode structure is a leaky wave.

[0009] Optionally, there is a first spacing dimension L between the first electrode strips and the second electrode strips adjacent to each other along the first direction; and the thickness of the piezoelectric layer is 0.2L to 40L.

[0010] Optionally, the material of the protective layer includes: insulating material; the insulating material includes: silicon oxide, silicon nitride, aluminum oxide or silicon oxynitride.

[0011] Optionally, the thickness of the protective layer is greater than or equal to 10 nanometers.

[0012] Optionally, the thickness of the isolation layer is 10 nanometers to 10 micrometers.

[0013] Optionally, the material of the isolation layer includes: insulating material; the insulating material includes: silicon oxide, silicon nitride, aluminum oxide, polyimide, photoresist, polysilicon, high-resistance silicon or amorphous silicon.

[0014] Optionally, the electrode structure also includes: a plurality of first pseudo-finger electrode strips connected to the first bus, the first electrode strips and the first pseudo-finger electrode strips are arranged at intervals along the first direction, and the first pseudo-finger electrode strips and the corresponding second electrode strips are arranged along the second direction; a plurality of second pseudo-finger electrode strips connected to the second bus, the second electrode strips and the second pseudo-finger electrode strips are arranged at intervals along the first direction, and the second pseudo-finger electrode strips and the corresponding first electrode strips are arranged along the second direction; the first pseudo-finger electrode strips are located in the first spacing area, and the second pseudo-finger electrode strips are located in the second spacing area.

[0015] Optionally, the projection of the first load portion toward the substrate is also located in part of the first spacing area, and the projection of the first load portion toward the substrate partially overlaps with the projection of the first dummy electrode toward the substrate; the projection of the second load portion toward the substrate is also located in part of the second spacing area, and the projection of the second load portion toward the substrate partially overlaps with the projection of the second dummy electrode toward the substrate.

[0016] Optionally, the first load portion is an integral structure extending along the first direction; and the second load portion is an integral structure extending along the first direction.

[0017] Optionally, the projection of the first load portion toward the substrate covers the projection of the first electrode strip located in the first edge area toward the substrate, and covers the projection of the second electrode strip located in the first edge area toward the substrate; the projection of the second load portion toward the substrate covers the projection of the first electrode strip located in the second edge area toward the substrate, and covers the projection of the second electrode strip located in the second edge area toward the substrate.

[0018] Optionally, the first load portion includes: a plurality of first load sub-portions arranged along the first direction; the second load portion includes: a plurality of second load sub-portions arranged along the first direction.

[0019] Optionally, the projection of the first load sub-unit toward the substrate covers the projection of the first electrode strip located in the first edge area toward the substrate, or covers the projection of the second electrode strip located in the first edge area toward the substrate; the projection of the second load sub-unit toward the substrate covers the projection of the first electrode strip located in the second edge area toward the substrate, or covers the projection of the second electrode strip located in the second edge area toward the substrate.

[0020] Optionally, projections of the first load portion and the second load portion toward the substrate are located within a projection range of the isolation layer toward the substrate.

[0021] Optionally, the materials of the first load part and the second load part include: metal material or insulating material; the metal material includes: aluminum, copper, platinum, tungsten, molybdenum, chromium, titanium, tantalum, magnesium or copper-aluminum alloy; the insulating material includes: silicon, silicon oxide, silicon nitride, aluminum oxide, silicon oxynitride, polyimide, photoresist, polycrystalline silicon, high-resistance silicon or amorphous silicon.

[0022] Correspondingly, the technical solution of the present invention also provides a method for forming a surface acoustic wave resonance device, including: providing a substrate; providing a piezoelectric layer; forming an intermediate layer, wherein the intermediate layer is located between the substrate and the piezoelectric layer; forming an electrode structure on the piezoelectric layer; wherein forming the electrode structure includes: forming a first bus and a second bus extending along a first direction and arranged in parallel along a second direction, wherein the first direction is perpendicular to the second direction; forming a plurality of first electrode strips connected to the first bus, wherein the plurality of first electrode strips are arranged in parallel along the first direction; forming a plurality of second electrode strips connected to the second bus, wherein the plurality of second electrode strips are arranged in parallel along the first direction, and the first electrode strips and the second electrode strips are staggered; between the first bus and the second bus, a first spacing area, an overlapping area, and a second spacing area are arranged in sequence along the second direction, wherein the first electrode strips and the second electrode strips in the overlapping area overlap along the first direction, and the overlapping area includes a first edge an edge region, an intermediate region, and a second edge region, the first edge region being located between the first spacing region and the intermediate region, and the second edge region being located between the second spacing region and the intermediate region; forming a protective layer on the piezoelectric layer, the protective layer covering the surface of the electrode structure; forming an isolation layer on the protective layer, the isolation layer having an opening, the opening exposing the protective layer, the projection of the opening toward the substrate coinciding with the intermediate region, the projection of the isolation layer toward the substrate being located at least in the first edge region and the second edge region, and not in the intermediate region; forming a load structure on the isolation layer; wherein forming the load structure comprises: forming a first load portion, the projection of the first load portion toward the substrate being located in the first edge region, the sound velocity of the first edge region being smaller than the sound velocity of the intermediate region; forming a second load portion, the projection of the second load portion toward the substrate being located in the second edge region, the sound velocity of the second edge region being smaller than the sound velocity of the intermediate region.

[0023] Optionally, forming the electrode structure also includes: forming a plurality of first pseudo-finger electrode strips connected to the first bus, the first electrode strips and the first pseudo-finger electrode strips are arranged at intervals along the first direction, and the first pseudo-finger electrode strips and the corresponding second electrode strips are arranged along the second direction; forming a plurality of second pseudo-finger electrode strips connected to the second bus, the second electrode strips and the second pseudo-finger electrode strips are arranged at intervals along the first direction, and the second pseudo-finger electrode strips and the corresponding first electrode strips are arranged along the second direction; the first pseudo-finger electrode strips are located in the first spacing area, and the second pseudo-finger electrode strips are located in the second spacing area.

[0024] Optionally, the projection of the first load portion toward the substrate is also located in part of the first spacing area, and the projection of the first load portion toward the substrate partially overlaps with the projection of the first dummy electrode toward the substrate; the projection of the second load portion toward the substrate is also located in part of the second spacing area, and the projection of the second load portion toward the substrate partially overlaps with the projection of the second dummy electrode toward the substrate.

[0025] Optionally, the first load portion is an integral structure extending along the first direction; and the second load portion is an integral structure extending along the first direction.

[0026] Optionally, the first load portion includes: a plurality of first load sub-portions arranged along the first direction; the second load portion includes: a plurality of second load sub-portions arranged along the first direction.

[0027] Optionally, the method for forming the isolation layer includes: forming an isolation material layer on the protective layer; and performing a patterning process on the isolation material layer until a surface of the protective layer is exposed, thereby forming the isolation layer.

[0028] Compared with the prior art, the technical solution of the present invention has the following advantages:

[0029] In the surface acoustic wave resonator device of the technical solution of the present invention, by adding the isolation layer between the load structure and the electrode structure, the opening in the isolation layer exposes the middle area, and the load structure is added above both sides of the opening, the projection of the first load part in the load structure toward the substrate is located in the first edge area, so that the sound speed of the first edge area is less than the sound speed of the middle area, and the projection of the second load part in the load structure toward the substrate is located in the second edge area, so that the sound speed of the second edge area is less than the sound speed of the middle area, and the piston mode is stimulated without significantly reducing the RF performance (Q value), thereby effectively suppressing the high-order lateral parasitic mode generated in the middle area; and the isolation layer can isolate the electrode structure from the load structure, preventing the electrical breakdown between the electrode structure and the load structure from causing the device structure to fail. By adding the protective layer, and the protective layer covering the surface of the electrode structure, it is possible to effectively prevent the corrosion of the electrode structure caused by external water vapor and the oxidation of the electrode structure.

[0030] In the method for forming a surface acoustic wave resonator device of the technical solution of the present invention, the isolation layer is formed between the load structure and the electrode structure, the opening in the isolation layer exposes the middle area, the load structure is formed above both sides of the opening, the projection of the first load part in the load structure toward the substrate is located in the first edge area, so that the sound velocity of the first edge area is less than the sound velocity of the middle area, the projection of the second load part in the load structure toward the substrate is located in the second edge area, so that the sound velocity of the second edge area is less than the sound velocity of the middle area, the piston mode is stimulated without significantly reducing the RF performance (Q value), and the high-order lateral parasitic mode generated in the middle area is effectively suppressed; and the isolation layer can isolate the electrode structure from the load structure, and prevent the electrical breakdown between the electrode structure and the load structure from causing device structure failure. By forming the protective layer, and the protective layer covers the surface of the electrode structure, it can effectively prevent the corrosion of the electrode structure caused by external water vapor and the oxidation of the electrode structure. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] Figure 1 and Figure 2 It is a schematic diagram of the structure of a surface acoustic wave resonance device;

[0032] Figures 3 to 9 is a structural schematic diagram of each step of a method for forming a surface acoustic wave resonator device in an embodiment of the present invention;

[0033] Fig.10 is a schematic structural diagram of a surface acoustic wave resonance device in another embodiment of the present invention;

[0034] Fig.11 is a schematic structural diagram of a surface acoustic wave resonance device in another embodiment of the present invention;

[0035] Fig.12 is a schematic structural diagram of a surface acoustic wave resonance device in another embodiment of the present invention;

[0036] Fig.13 is a schematic structural diagram of a surface acoustic wave resonance device in another embodiment of the present invention;

[0037] Fig.14 is a schematic structural diagram of a surface acoustic wave resonance device in another embodiment of the present invention;

[0038] Fig.15 is a schematic structural diagram of a surface acoustic wave resonance device in another embodiment of the present invention;

[0039] Fig.16 It is a schematic structural diagram of a surface acoustic wave resonance device in another embodiment of the present invention. DETAILED DESCRIPTION

[0040] As described in the background art, there are still many problems with the surface acoustic wave resonance device, which will be described in detail below with reference to the accompanying drawings.

[0041] Figure 1 and Figure 2 It is a structural schematic diagram of a surface acoustic wave resonance device.

[0042] Please refer to Figure 1 and Figure 2 , Figure 2 yes Figure 1 A schematic cross-sectional view along line AA in FIG. 1 shows a surface acoustic wave resonance device, comprising: a substrate 100; a piezoelectric layer 101, wherein the piezoelectric layer 101 comprises a first side 101a and a second side 101b opposite to each other, wherein the piezoelectric layer 101 is located on the substrate 100, and the substrate 100 is located on the second side 101b; an electrode structure 102, wherein the electrode structure 102 is located on the first side 101a, and the electrode structure is located on the piezoelectric layer 101; wherein the electrode structure 102 comprises: a first bus 1021 and a second bus 1022 extending along a first direction X and arranged in parallel along a second direction Y, wherein the first direction X is perpendicular to the second direction Y; a plurality of first electrodes connected to the first bus 1021; The first electrode strips 1023 are arranged in parallel along the first direction X; the second electrode strips 1024 connected to the second bus 1022 are arranged in parallel along the first direction X, and the first electrode strips 1023 and the second electrode strips 1024 are arranged in parallel along the first direction X, and the first electrode strips 1023 and the second electrode strips 1024 are staggered; there are a first spacing area A1, an overlapping area B1 and a second spacing area A2 arranged along the first direction X between the first bus 1021 and the second bus 1022, and the overlapping area B1 is located between the first spacing area A1 and the second spacing area A2, and the first electrode strips 1023 and the second electrode strips 1024 in the overlapping area B1 have an overlapping area along the first direction X.

[0043] In this embodiment, since the arrangement density of the first electrode strips 1023 and the second electrode strips 1024 on the overlapping area B1 is relatively large, the sound velocity on the overlapping area B1 is smaller than the sound velocity on the first spacing area A1 and the second spacing area A2. Therefore, the difference in sound velocity between the overlapping area B1 and the first spacing area A1 and the second spacing area A2 is used to confine the main frequency energy of the resonance device to the overlapping area B1 to form a standing wave.

[0044] Please continue to refer to Figure 2 There is high-order acoustic wave energy in the overlap region B1, resulting in lateral spurious resonance, which in turn affects the performance of the resonant device.

[0045] At present, a load structure (not shown) can be formed on the electrode structure 102 to change the sound velocity distribution and thus stimulate a piston mode, thereby suppressing the lateral parasitic resonance. However, an isolation layer (not shown) needs to be added between the electrode structure 102 and the load structure to prevent the electrode structure and the load structure from being electrically broken down. However, the isolation layer formed in the prior art will completely cover the electrode structure 102, thereby affecting the Q value of the resonant device.

[0046] On this basis, the present invention provides a surface acoustic wave resonance device and a method for forming the same. The isolation layer is added between the load structure and the electrode structure, the opening in the isolation layer exposes the middle area, the load structure is added above both sides of the opening, the projection of the first load part in the load structure toward the substrate is located in the first edge area, so that the sound velocity of the first edge area is less than the sound velocity of the middle area, the projection of the second load part in the load structure toward the substrate is located in the second edge area, so that the sound velocity of the second edge area is less than the sound velocity of the middle area, and the piston mode is stimulated without significantly reducing the RF performance (Q value), thereby effectively suppressing the high-order lateral parasitic mode generated in the middle area; and the isolation layer can isolate the electrode structure from the load structure, preventing the electrical breakdown between the electrode structure and the load structure from causing the device structure to fail. By adding the protective layer, and the protective layer covering the surface of the electrode structure, the corrosion of the electrode structure caused by external water vapor and the oxidation of the electrode structure can be effectively prevented.

[0047] In order to make the above-mentioned objects, features and advantages of the present invention more obvious and easy to understand, the specific embodiments of the present invention are described in detail below with reference to the accompanying drawings.

[0048] In the following description, many specific details are set forth to facilitate a full understanding of the present invention. However, the present invention may also be implemented in other ways different from those described herein. Therefore, the present invention is not limited to the specific embodiments disclosed below.

[0049] Figures 3 to 9 It is a structural schematic diagram of each step of the method for forming a surface acoustic wave resonance device in an embodiment of the present invention.

[0050] Please refer to Figure 3 , providing a substrate 200.

[0051] In this embodiment, the material of the substrate 200 includes silicon, sapphire, spinel or silicon carbide.

[0052] Please refer to Figure 4, providing a piezoelectric layer 201 ; forming an intermediate layer 206 , wherein the intermediate layer 206 is located between the substrate 200 and the piezoelectric layer 201 .

[0053] In this embodiment, the intermediate layer 206 is a bonding layer for bonding the substrate 200 and the piezoelectric layer 201 .

[0054] In this embodiment, the material of the intermediate layer 206 includes silicon oxide, silicon oxynitride, or a compound of silicon oxide with one or more elements of carbon and fluorine added thereto.

[0055] In this embodiment, the intermediate layer 206 is formed on one side of the piezoelectric layer 201 , and then the substrate 200 is bonded to the intermediate layer 206 .

[0056] In other embodiments, the intermediate layer may also be formed on the substrate, and then the intermediate layer is bonded to the piezoelectric layer.

[0057] In other embodiments, the intermediate layer may also include a first sub-intermediate layer and a second sub-intermediate layer, wherein the first sub-intermediate layer is formed on the substrate, and the second sub-intermediate layer is formed on one side of the piezoelectric layer, and the first sub-intermediate layer and the second sub-intermediate layer are bonded together.

[0058] In this embodiment, the material of the piezoelectric layer 201 includes: lithium tantalate, lithium niobate, lead zirconate titanate, lead magnesium niobate-lead titanate, aluminum nitride, aluminum nitride alloy, gallium nitride or zinc oxide.

[0059] Please refer to Figure 5 and Figure 6 , Figure 6 yes Figure 5 In the cross-sectional diagram along line BB, an electrode structure 202 is formed on the piezoelectric layer 201 .

[0060] In this embodiment, forming the electrode structure 202 includes: forming a first bus 2021 and a second bus 2022 extending along a first direction X and arranged in parallel along a second direction Y, wherein the first direction X is perpendicular to the second direction Y; forming a plurality of first electrode strips 2023 connected to the first bus 2021, wherein the plurality of first electrode strips 2023 are arranged in parallel along the first direction X; forming a plurality of second electrode strips 2024 connected to the second bus 2022, wherein the plurality of second electrode strips 2024 are arranged in parallel along the first direction X, wherein the first electrode strips 2023 and the second electrode strips 2024 are arranged in parallel along the first direction X. 2024 are staggered; between the first bus 2021 and the second bus 2022, there are a first spacing area A1, an overlapping area B1 and a second spacing area A2 arranged in sequence along the second direction Y, the first electrode strip 2023 and the second electrode strip 2024 of the overlapping area B1 overlap along the first direction X, the overlapping area B1 includes a first edge area C1, a middle area C2 and a second edge area C3, the first edge area C1 is located between the first spacing area A1 and the middle area C2, and the second edge area C3 is located between the second spacing area A2 and the middle area C2.

[0061] In this embodiment, the material of the electrode structure 202 includes molybdenum, ruthenium, tungsten, platinum, copper, chromium, magnesium or scandium.

[0062] In this embodiment, the main modal wave excited by the electrode structure 202 is a leaky wave.

[0063] Please continue to refer to Figure 5 In this embodiment, there is a center distance L between the first electrode strips 2023 and the second electrode strips 2024 adjacent to each other along the first direction X, and the thickness range of the piezoelectric layer 201 is: 0.2L to 40L.

[0064] It should be noted that the wavelength of the surface acoustic wave resonator is 2L, that is, the thickness of the piezoelectric layer 201 is in the range of 0.2 to 40 times of half the wavelength of the surface acoustic wave resonator.

[0065] Please refer to Figure 7 , Figure 7 and Figure 6 In accordance with the viewing direction, a protective layer 203 is formed on the piezoelectric layer 201 , and the protective layer 202 covers the surface of the electrode structure 202 .

[0066] The electrode structure 202 is protected by the protective layer 203 , which can effectively prevent the electrode structure 202 from being corroded by external water vapor and the like, and can also effectively prevent the electrode structure 202 from being oxidized.

[0067] In this embodiment, the material of the protection layer 203 includes: insulating material; the insulating material includes: silicon oxide, silicon nitride, aluminum oxide or silicon oxynitride.

[0068] In this embodiment, the thickness of the protection layer 203 is greater than or equal to 10 nanometers.

[0069] Please refer to Figure 8 and Fig. 9 , Figure 8 is a top view of the surface acoustic resonance device with the protective layer 203 and the isolation layer 205 omitted, Fig. 9 yes Figure 8 In the cross-sectional schematic diagram along the CC line, an isolation layer 205 is formed on the protective layer 203, and the isolation layer 205 has an opening 2051. The opening 2051 exposes the protective layer 203, and the projection of the opening 2051 toward the substrate 200 coincides with the middle area C2. The projection of the isolation layer 205 toward the substrate 200 is at least located in the first edge area C1 and the second edge area C3, and is not located in the middle area C2.

[0070] In this embodiment, the material of the isolation layer 205 includes: insulating material; the insulating material includes: silicon oxide, silicon nitride, aluminum oxide, polyimide, photoresist, polysilicon, high-resistance silicon or amorphous silicon.

[0071] In this embodiment, the thickness of the isolation layer 205 is 10 nanometers to 10 micrometers. Optionally, the thickness of the isolation layer 205 is greater than the thickness of the protection layer 203 .

[0072] In this embodiment, the method for forming the isolation layer 205 includes: forming an isolation material layer (not shown) on the protection layer 203; and patterning the isolation material layer until the surface of the protection layer 203 is exposed to form the isolation layer 205 and the opening 2051.

[0073] Please continue to refer to Figure 8 and Fig. 9 , a load structure 204 is formed on the isolation layer 205; wherein forming the load structure 204 includes: forming a first load portion 2041, wherein the projection of the first load portion 2041 toward the substrate 200 is located in the first edge area C1, and the sound speed of the first edge area C1 is smaller than the sound speed of the middle area C2; forming a second load portion 2042, wherein the projection of the second load portion 2042 toward the substrate 200 is located in the second edge area C3, and the sound speed of the second edge area C3 is smaller than the sound speed of the middle area C2.

[0074] The isolation layer 205 is formed between the load structure 204 and the electrode structure 202, and the opening 2051 in the isolation layer 205 exposes the middle area C2. The load structure 204 is formed above both sides of the opening 2051. The projection of the first load part 2041 in the load structure 204 toward the substrate 200 is located in the first edge area C1, so that the sound speed of the first edge area C1 is smaller than the sound speed of the middle area C2. The projection of the second load part 2042 in the load structure 204 toward the substrate 200 is located in the second edge area C3, so that the sound speed of the second edge area C3 is smaller than the sound speed of the middle area C2. A piston mode is excited without significantly reducing the radio frequency performance (Q value), and a high-order lateral parasitic mode generated in the middle area C2 is effectively suppressed.

[0075] In this embodiment, the materials of the first load unit 2041 and the second load unit 2042 include: metal material or insulating material; the metal material includes: aluminum, copper, platinum, tungsten, molybdenum, chromium, titanium, tantalum, magnesium or copper-aluminum alloy; the insulating material includes: silicon, silicon oxide, silicon nitride, aluminum oxide, silicon oxynitride, polyimide, photoresist, polycrystalline silicon, high-resistance silicon or amorphous silicon.

[0076] In this embodiment, since the projection of the isolation layer 205 toward the substrate 200 is located at least in the first edge area C1 and the second edge area C3, the isolation layer 205 can prevent the electrical breakdown between the electrode structure 202 and the load structure 204 from causing device structure failure, and the opening 2051 in the isolation layer 205 exposes the middle area C2 to reduce the impact on the Q value of the resonant device.

[0077] In this embodiment, the first load unit 2041 is an integral structure extending along the first direction X, and the first load unit 2041 is located on the first electrode strip 2023 and the second electrode strip 2024; the second load unit 2042 is an integral structure extending along the first direction X, and the first load unit 2041 is located on the first electrode strip 2023 and the second electrode strip 2024.

[0078] In this embodiment, the projection of the first load portion 2041 toward the substrate 200 covers the projection of the first electrode strip 2023 located in the first edge area C1 toward the substrate 200, and covers the projection of the second electrode strip 2024 located in the first edge area C1 toward the substrate 200; the projection of the second load portion 2042 toward the substrate 200 covers the projection of the first electrode strip 2023 located in the second edge area C3 toward the substrate 200, and covers the projection of the second electrode strip 2024 located in the second edge area C3 toward the substrate 200.

[0079] Please continue to refer to Fig. 9 In this embodiment, the projections of the first load part 2041 and the second load part 2042 toward the substrate 200 are located within the projection range of the isolation layer 205 toward the substrate 200, that is, the isolation layer 205 is not only located between the load structure 204 and the electrode structure 202, but also located in the first spacing area A1 and the second spacing area A2, respectively, covering the first electrode strip 2023 of the first spacing area A1, and covering the second electrode strip 2024 of the second spacing area A2. The isolation layer 205 is not located on the middle area C2 to avoid affecting the resonance effect of the middle area C2 and affecting the Q value of the resonance device.

[0080] In other embodiments, the isolation layer may also be located only between the load structure and the electrode structure.

[0081] Correspondingly, the present invention also provides a surface acoustic wave resonance device in the embodiment, please continue to refer to Fig. 9, comprising: a substrate 200; an intermediate layer 206, the intermediate layer 206 being located on the substrate 200; a piezoelectric layer 201, the piezoelectric layer 201 being located on the intermediate layer 206; an electrode structure 202, the electrode structure 202 being located on the piezoelectric layer 201; wherein the electrode structure 202 comprises: a first bus 2021 and a second bus 2022 extending along a first direction X and arranged in parallel along a second direction Y, the first direction X being perpendicular to the second direction Y; a plurality of first electrode strips 2023 connected to the first bus 2021, the plurality of first electrode strips 2023 being arranged in parallel along the first direction X; and a plurality of first electrode strips 2023 connected to the second bus 2021. The bus 2022 is connected to a plurality of second electrode strips 2024, the plurality of second electrode strips 2024 are arranged in parallel along the first direction X, and the first electrode strips 2023 and the second electrode strips 2024 are arranged alternately; between the first bus 2021 and the second bus 2022, there is a first spacing area A1, an overlap area B1 and a second spacing area A2 sequentially arranged along the second direction Y, the first electrode strips 2023 and the second electrode strips 2024 in the overlap area B1 overlap along the first direction X, the overlap area B1 includes a first edge area C1, a middle area C2 and a second edge area C3, the first edge area C1 is located at between the first spacing area A1 and the middle area C2, and the second edge area C3 is located between the second spacing area A2 and the middle area C2; a protective layer 203, the protective layer 203 is located on the piezoelectric layer 201, and the protective layer 203 covers the surface of the electrode structure 202; an isolation layer 205, the isolation layer 205 is located on the protection layer 203, and the isolation layer 205 has an opening 2051, the opening 2051 exposes the protection layer 203, the projection of the opening 2051 toward the substrate 200 coincides with the middle area C2, and the projection of the isolation layer 205 toward the substrate 200 is at least Located in the first edge area C1 and the second edge area C3, and not located in the middle area C2; a load structure 204, wherein the load structure 204 is located on the isolation layer 205; wherein the load structure 204 comprises: a first load portion 2041, wherein the projection of the first load portion 2041 toward the substrate 200 is located in the first edge area C1, and the sound speed of the first edge area C1 is smaller than the sound speed of the middle area C2; a second load portion 2042, wherein the projection of the second load portion 2042 toward the substrate 200 is located in the second edge area C3, and the sound speed of the second edge area C3 is smaller than the sound speed of the middle area C2.

[0082] The isolation layer 205 is added between the load structure 204 and the electrode structure 202, the opening 2051 in the isolation layer 205 exposes the middle area C2, the load structure 204 is added above both sides of the opening 2051, the projection of the first load part 2041 in the load structure 204 toward the substrate 200 is located in the first edge area C1, so that the sound speed of the first edge area C1 is smaller than the sound speed of the middle area C2, and the projection of the second load part 2042 in the load structure 204 toward the substrate 200 is located in the second edge area C3, so that the sound speed of the second edge area C3 is smaller than the sound speed of the middle area C2, and the piston mode is stimulated without significantly reducing the radio frequency performance (Q value), and the high-order lateral parasitic mode generated in the middle area C2 is effectively suppressed; and the isolation layer 205 can isolate the electrode structure 202 from the load structure 204, so as to prevent the electrical breakdown between the electrode structure 202 and the load structure 204 from causing device structure failure. The electrode structure 202 is protected by the protective layer 203 , which can effectively prevent the electrode structure 202 from being corroded by external water vapor and the like, and can also effectively prevent the electrode structure 202 from being oxidized.

[0083] In this embodiment, the material of the piezoelectric layer 201 includes: lithium tantalate, lithium niobate or aluminum nitride.

[0084] In this embodiment, the main modal wave excited by the electrode structure 202 is a leaky wave.

[0085] Please continue to refer to Figure 5 In this embodiment, there is a center distance L between the first electrode strips 2023 and the second electrode strips 2024 adjacent to each other along the first direction X, and the thickness range of the piezoelectric layer 201 is: 0.2L to 40L.

[0086] In this embodiment, the material of the protection layer 203 includes: insulating material; the insulating material includes: silicon oxide, silicon nitride, aluminum oxide or silicon oxynitride.

[0087] In this embodiment, the thickness of the protection layer 203 is greater than or equal to 10 nanometers.

[0088] In this embodiment, the thickness of the isolation layer 205 is 10 nanometers to 10 micrometers. Optionally, the thickness of the isolation layer 205 is greater than the thickness of the protection layer 203 .

[0089] In this embodiment, the material of the isolation layer 205 includes: insulating material; the insulating material includes: silicon oxide, silicon nitride, aluminum oxide, polyimide, photoresist, polysilicon, high-resistance silicon or amorphous silicon.

[0090] In this embodiment, the first load unit 2041 is an integral structure extending along the first direction X, and the first load unit 2041 is located on the first electrode strip 2023 and the second electrode strip 2024; the second load unit 2042 is an integral structure extending along the first direction X, and the first load unit 2041 is located on the first electrode strip 2023 and the second electrode strip 2024.

[0091] In this embodiment, the projection of the first load portion 2041 toward the substrate 200 covers the projection of the first electrode strip 2023 located in the first edge area C1 toward the substrate 200, and covers the projection of the second electrode strip 2024 located in the first edge area C1 toward the substrate 200; the projection of the second load portion 2042 toward the substrate 200 covers the projection of the first electrode strip 2023 located in the second edge area C3 toward the substrate 200, and covers the projection of the second electrode strip 2024 located in the second edge area C3 toward the substrate 200.

[0092] In this embodiment, the materials of the first load unit 2041 and the second load unit 2042 include: metal material or insulating material; the metal material includes: aluminum, copper, platinum, tungsten, molybdenum, chromium, titanium, tantalum, magnesium or copper-aluminum alloy; the insulating material includes: silicon, silicon oxide, silicon nitride, aluminum oxide, silicon oxynitride, polyimide, photoresist, polycrystalline silicon, high-resistance silicon or amorphous silicon.

[0093] In this embodiment, the projections of the first load part 2041 and the second load part 2042 toward the substrate 200 are located within the projection range of the isolation layer 205 toward the substrate 200, that is, the isolation layer 205 is not only located between the load structure 204 and the electrode structure 202, but also located in the first spacing area A1 and the second spacing area A2, respectively, covering the first electrode strip 2023 of the first spacing area A1, and covering the second electrode strip 2024 of the second spacing area A2. The isolation layer 205 is not located on the middle area C2 to avoid affecting the resonance effect of the middle area C2 and affecting the Q value of the resonance device.

[0094] In other embodiments, the isolation layer may also be located only between the load structure and the electrode structure.

[0095] Fig.10 It is a schematic structural diagram of a surface acoustic wave resonance device in another embodiment of the present invention.

[0096] In this embodiment, the method for forming the surface acoustic wave resonance device is further improved on the basis of the above embodiment, and the rest is the same as the above embodiment ( Fig. 9) The same, the difference is that: the first load part 2041 and the second load part 2042 are discrete structures. Specific descriptions will be given below with reference to the accompanying drawings.

[0097] Please refer to Fig.10 , forming the first load part 2041 includes: forming a plurality of first load sub - parts 20411 arranged along the first direction X, and the first load sub - parts 20411 are located on the corresponding first electrode strip 2023 or the second electrode strip 2024; forming the second load part 2042 includes: a plurality of second load sub - parts 20421 arranged along the first direction X, and the second load sub - parts 20421 are located on the corresponding first electrode strip 2023 or the second electrode strip 2024.

[0098] Please continue to refer to Fig.10 , the projection of the first load sub - part 20411 towards the substrate 200 covers the projection of the first electrode strip 2023 located in the first edge area C1 towards the substrate 200, or covers the projection of the second electrode strip 2024 located in the first edge area C1 towards the substrate 200; the projection of the second load sub - part 20421 towards the substrate 200 covers the projection of the first electrode strip 2023 located in the second edge area C3 towards the substrate 200, or covers the projection of the second electrode strip 2024 located in the second edge area C3 towards the substrate 200.

[0099] Correspondingly, in an embodiment of the present invention, a surface acoustic wave resonator device is also provided. Please continue to refer to Fig.10 , and the remaining structures are the same as those of the surface acoustic wave resonator device described in the above - mentioned embodiment ( Fig. 9 ), the difference is that: the first load part 2041 and the second load part 2042 are discrete structures.

[0100] Please continue to refer to Fig.10 , in this embodiment, the first load part 2041 includes: a plurality of first load sub - parts 20411 arranged along the first direction X, and the first load sub - parts 20411 are located on the corresponding first electrode strip 2023 or the second electrode strip 2024; the second load part 2042 includes: a plurality of second load sub - parts 20421 arranged along the first direction X, and the second load sub - parts 20421 are located on the corresponding first electrode strip 2023 or the second electrode strip 2024.

[0101] Please continue to refer to Fig.10, the projection of the first load sub-portion 20411 toward the substrate 200 covers the projection of the first electrode strip 2023 located in the first edge area C1 toward the substrate 200, or covers the projection of the second electrode strip 2024 located in the first edge area C1 toward the substrate 200; the projection of the second load sub-portion 20421 toward the substrate 200 covers the projection of the first electrode strip 2023 located in the second edge area C3 toward the substrate 200, or covers the projection of the second electrode strip 2024 located in the second edge area C3 toward the substrate 200.

[0102] Fig.11 is a schematic structural diagram of a surface acoustic wave resonance device in another embodiment of the present invention; Fig.12 It is a schematic structural diagram of a surface acoustic wave resonance device in another embodiment of the present invention.

[0103] In this embodiment, the method for forming the surface acoustic wave resonance device is further improved on the basis of the above embodiment, and the rest is the same as the above embodiment ( Fig. 9 ) is the same as that of the embodiment of the present invention, except that the electrode structure 202 further includes a pseudo-finger electrode strip.

[0104] Please refer to Fig.11 , forming the electrode structure 202 also includes: forming a plurality of first pseudo-finger electrode strips 2025 connected to the first bus 2021, the first electrode strips 2023 and the first pseudo-finger electrode strips 2025 are arranged at intervals along the first direction X, and the first pseudo-finger electrode strips 2025 and the corresponding second electrode strips 2024 are arranged along the second direction Y; forming a plurality of second pseudo-finger electrode strips 2026 connected to the second bus 2022, the second electrode strips 2024 and the second pseudo-finger electrode strips 2026 are arranged at intervals along the first direction X, and the second pseudo-finger electrode strips 2026 and the corresponding first electrode strips 2023 are arranged along the second direction Y; the first pseudo-finger electrode strips 2025 are located in the first spacing area A1, and the second pseudo-finger electrode strips 2026 are located in the second spacing area A2.

[0105] Please continue to refer to Fig.11 In this embodiment, the first load unit 2041 and the second load unit 2042 are an integral structure. For details, please refer to Figure 8 and Fig. 9 The relevant instructions are as described above and will not be repeated here.

[0106] Please refer to Fig.12 In other embodiments, the first load unit 2041 and the second load unit 2042 may also be separate structures. For details, please refer to Fig.10The relevant instructions are as described above and will not be repeated here.

[0107] Correspondingly, a surface acoustic wave resonance device is also provided in the embodiment of the present invention, please continue to refer to Fig.11 , the rest of the structures are the same as those in the above embodiment ( Fig. 9 ) is the same as the surface acoustic wave resonance device described in ), except that: the electrode structure 202 also includes pseudo-finger electrode strips.

[0108] Please continue to refer to Fig.11 In this embodiment, the electrode structure 202 also includes: a plurality of first pseudo-finger electrode strips 2025 connected to the first bus 2021, the first electrode strips 2023 and the first pseudo-finger electrode strips 2025 are arranged at intervals along the first direction X, and the first pseudo-finger electrode strips 2025 and the corresponding second electrode strips 2024 are arranged along the second direction Y; a plurality of second pseudo-finger electrode strips 2026 connected to the second bus 2022, the second electrode strips 2024 and the second pseudo-finger electrode strips 2026 are arranged at intervals along the first direction X, and the second pseudo-finger electrode strips 2026 and the corresponding first electrode strips 2023 are arranged along the second direction Y; the first pseudo-finger electrode strips 2025 are located in the first spacing area A1, and the second pseudo-finger electrode strips 2026 are located in the second spacing area A2.

[0109] Please continue to refer to Fig.11 In this embodiment, the first load unit 2041 and the second load unit 2042 are an integral structure. For details, please refer to Figure 8 and Fig. 9 The relevant instructions are as described above and will not be repeated here.

[0110] Please refer to Fig.12 In other embodiments, the first load unit 2041 and the second load unit 2042 may also be separate structures. For details, please refer to Fig.10 The relevant instructions are as described above and will not be repeated here.

[0111] Fig.13 is a schematic structural diagram of a surface acoustic wave resonance device in another embodiment of the present invention; Fig.14 is a schematic structural diagram of a surface acoustic wave resonance device in another embodiment of the present invention; Fig.15 is a schematic structural diagram of a surface acoustic wave resonance device in another embodiment of the present invention; Fig.16 It is a schematic structural diagram of a surface acoustic wave resonance device in another embodiment of the present invention.

[0112] In this embodiment, the method for forming the surface acoustic wave resonance device is further improved on the basis of the above embodiment, and the rest is the same as the above embodiment ( Fig. 9), except that: the projection of the load structure 204 toward the substrate 200 is also located in part of the first spacing area A1 and part of the second spacing area A2. Specific description will be given below in conjunction with the accompanying drawings.

[0113] Please refer to Fig.13 In the present embodiment, the projection of the first load portion 2041 toward the substrate 200 is also located in a portion of the first spacing area A1, and the projection of the first load portion 2041 toward the substrate 200 partially overlaps with the projection of the first electrode strip 2023 located in the first spacing area A1 toward the substrate 200; the projection of the second load portion 2042 toward the substrate 200 is also located in a portion of the second spacing area A2, and the projection of the second load portion 2042 toward the substrate 200 partially overlaps with the projection of the second electrode strip 2024 located in the second spacing area A2 toward the substrate 200.

[0114] Please continue to refer to Fig.13 In this embodiment, the first load unit 2041 and the second load unit 2042 are an integral structure. For details, please refer to Figure 8 and Fig. 9 The relevant instructions are as described above and will not be repeated here.

[0115] Please refer to Fig.14 In other embodiments, the first load unit 2041 and the second load unit 2042 may also be separate structures. For details, please refer to Fig.10 The relevant instructions are as described above and will not be repeated here.

[0116] Please refer to Fig.15 In other embodiments, forming the electrode structure 202 further includes forming a pseudo-finger electrode strip. For details, please refer to Fig.11 Correspondingly, the projection of the first load portion 2041 toward the substrate 200 is also located in part of the first spacing area A1, and the projection of the first load portion 2041 toward the substrate 200 partially overlaps with the projection of the first dummy electrode 2025 toward the substrate 200; the projection of the second load portion 2042 toward the substrate 200 is also located in part of the second spacing area A2, and the projection of the second load portion 2042 toward the substrate 200 partially overlaps with the projection of the second dummy electrode 2026 toward the substrate 200.

[0117] Please continue to refer to Fig.15 In this embodiment, the first load unit 2041 and the second load unit 2042 are an integral structure. For details, please refer to Figure 8 and Fig. 9Correspondingly, the projection of the first load portion 2041 toward the substrate 200 also covers the partial projection of the first pseudo-finger electrode strip 2025 located in the first spacing area A1 toward the substrate 200; the projection of the second load portion 2042 toward the substrate 200 also covers the partial projection of the second pseudo-finger electrode strip 2026 located in the second spacing area A2 toward the substrate 200.

[0118] Please refer to Fig.16 In other embodiments, the first load unit 2041 and the second load unit 2042 may also be separate structures. For details, please refer to Fig.10 As described in the relevant description, it will not be repeated here. Correspondingly, the projection of the first load sub-unit 20411 toward the substrate 200 is also located in part of the first spacing area A1, and the projection of the first load sub-unit 20411 toward the substrate 200 also covers the partial projection of the first pseudo-finger electrode strip 2025 located in the first spacing area A1 toward the substrate 200, or also covers the partial projection of the first electrode strip 2023 located in the first spacing area A1 toward the substrate 200; the projection of the second load sub-unit 20421 toward the substrate 200 is also located in part of the second spacing area A2, and the projection of the second load sub-unit 20421 toward the substrate 200 also covers the partial projection of the second pseudo-finger electrode strip 2026 located in the second spacing area A2 toward the substrate 200, or also covers the partial projection of the second electrode strip 2024 located in the second spacing area A2 toward the substrate 200.

[0119] Accordingly, a surface acoustic wave resonance device is also provided in the embodiment of the present invention, please continue to refer to Fig.13 , the rest of the structures are the same as those in the above embodiment ( Fig. 9 ) is the same as the surface acoustic wave resonance device described in ), except that: the projection of the load structure 204 toward the substrate 200 is also located in part of the first spacing area A1 and part of the second spacing area A2.

[0120] Please continue to refer to Fig.13In the present embodiment, the projection of the first load portion 2041 toward the substrate 200 is also located in a portion of the first spacing area A1, and the projection of the first load portion 2041 toward the substrate 200 partially overlaps with the projection of the first electrode strip 2023 located in the first spacing area A1 toward the substrate 200; the projection of the second load portion 2042 toward the substrate 200 is also located in a portion of the second spacing area A2, and the projection of the second load portion 2042 toward the substrate 200 partially overlaps with the projection of the second electrode strip 2024 located in the second spacing area A2 toward the substrate 200.

[0121] Please continue to refer to Fig.13 In this embodiment, the first load unit 2041 and the second load unit 2042 are an integral structure. For details, please refer to Figure 8 and Fig. 9 The relevant instructions are as described above and will not be repeated here.

[0122] Please continue to refer to Fig.14 In other embodiments, the first load unit 2041 and the second load unit 2042 may also be separate structures. For details, please refer to Fig.10 The relevant instructions are as described above and will not be repeated here.

[0123] Please continue to refer to Fig.15 In other embodiments, the electrode structure 202 further includes pseudo-finger electrode strips. Fig.11 Correspondingly, the projection of the first load portion 2041 toward the substrate 200 is also located in part of the first spacing area A1, and the projection of the first load portion 2041 toward the substrate 200 partially overlaps with the projection of the first dummy electrode 2025 toward the substrate 200; the projection of the second load portion 2042 toward the substrate 200 is also located in part of the second spacing area A2, and the projection of the second load portion 2042 toward the substrate 200 partially overlaps with the projection of the second dummy electrode 2026 toward the substrate 200.

[0124] Please continue to refer to Fig.15 In this embodiment, the first load unit 2041 and the second load unit 2042 are an integral structure. For details, please refer to Figure 8 and Fig. 9Correspondingly, the projection of the first load portion 2041 toward the substrate 200 also covers the partial projection of the first pseudo-finger electrode strip 2025 located in the first spacing area A1 toward the substrate 200; the projection of the second load portion 2042 toward the substrate 200 also covers the partial projection of the second pseudo-finger electrode strip 2026 located in the second spacing area A2 toward the substrate 200.

[0125] Please continue to refer to Fig.16 In other embodiments, the electrode structure 202 further includes pseudo-finger electrode strips. Fig.11 The first load unit 2041 and the second load unit 2042 may also be separate structures. For details, please refer to Fig.10 Correspondingly, the projection of the first load sub-unit 20411 toward the substrate 200 also covers the partial projection of the first pseudo-finger electrode strip 2025 located in the first spacing area A1 toward the substrate 200, or also covers the partial projection of the first electrode strip 2023 located in the first spacing area A1 toward the substrate 200; the projection of the second load sub-unit 20421 toward the substrate 200 also covers the partial projection of the second pseudo-finger electrode strip 2026 located in the second spacing area A2 toward the substrate 200, or also covers the partial projection of the second electrode strip 2024 located in the second spacing area A2 toward the substrate 200.

[0126] It should be understood that the examples and embodiments herein are merely illustrative and that various modifications and corrections may be made by those skilled in the art without departing from the spirit and scope of the present invention as defined in this application and the appended claims.

Claims

1. A surface acoustic wave resonance device, characterized in that: include: substrate; an intermediate layer, the intermediate layer being located on the substrate; a piezoelectric layer, the piezoelectric layer being located on the intermediate layer, An electrode structure, the electrode structure is located on the piezoelectric layer; wherein the electrode structure comprises: a first bus and a second bus extending along a first direction and arranged in parallel along a second direction, the first direction being perpendicular to the second direction; A plurality of first electrode strips connected to the first bus, wherein the plurality of first electrode strips are arranged in parallel along a first direction; a plurality of second electrode strips connected to the second bus, the plurality of second electrode strips being arranged in parallel along the first direction, and the first electrode strips and the second electrode strips being arranged alternately; A first spacing area, an overlap area, and a second spacing area are sequentially arranged along the second direction between the first bus and the second bus, the first electrode strip and the second electrode strip in the overlap area overlap along the first direction, the overlap area includes a first edge area, a middle area, and a second edge area, the first edge area is located between the first spacing area and the middle area, and the second edge area is located between the second spacing area and the middle area; A protective layer, the protective layer is located on the piezoelectric layer, and the protective layer covers the surface of the electrode structure; an isolation layer, the isolation layer being located on the protective layer, the isolation layer having an opening, the opening exposing the protective layer, a projection of the opening toward the substrate coinciding with the middle region, and a projection of the isolation layer toward the substrate being located at least in the first edge region and the second edge region, and not in the middle region; A load structure, the load structure is located on the isolation layer; wherein the load structure comprises: a first load portion, wherein a projection of the first load portion toward the substrate is located in the first edge region, and a sound velocity in the first edge region is smaller than a sound velocity in the middle region; A second load portion, wherein a projection of the second load portion toward the substrate is located in the second edge region, and a sound velocity in the second edge region is smaller than a sound velocity in the middle region.

2. The surface acoustic wave resonator device according to claim 1, characterized in that: The material of the piezoelectric layer includes: lithium tantalate, lithium niobate or aluminum nitride.

3. The surface acoustic wave resonator device according to claim 1, characterized in that: The main modal wave excited by the electrode structure is a leaky wave.

4. The surface acoustic wave resonator device according to claim 1, characterized in that: There is a first spacing dimension L between the first electrode strips and the second electrode strips adjacent to each other along the first direction; and the thickness of the piezoelectric layer is 0.2L-40L.

5. The surface acoustic wave resonator device according to claim 1, characterized in that: The material of the protection layer includes: insulating material; the insulating material includes: silicon oxide, silicon nitride, aluminum oxide or silicon oxynitride.

6. The surface acoustic wave resonator device according to claim 1, characterized in that: The thickness of the protective layer is greater than or equal to 10 nanometers.

7. The surface acoustic wave resonator device according to claim 1, characterized in that: The thickness of the isolation layer is 10 nanometers to 10 micrometers.

8. The surface acoustic wave resonator device according to claim 1, characterized in that: The material of the isolation layer includes: insulating material; the insulating material includes: silicon oxide, silicon nitride, aluminum oxide, polyimide, photoresist, polysilicon, high-resistance silicon or amorphous silicon.

9. The surface acoustic wave resonator device according to claim 1, characterized in that: The electrode structure also includes: a plurality of first pseudo-finger electrode strips connected to the first bus, the first electrode strips and the first pseudo-finger electrode strips are arranged at intervals along the first direction, and the first pseudo-finger electrode strips and the corresponding second electrode strips are arranged along the second direction; a plurality of second pseudo-finger electrode strips connected to the second bus, the second electrode strips and the second pseudo-finger electrode strips are arranged at intervals along the first direction, and the second pseudo-finger electrode strips and the corresponding first electrode strips are arranged along the second direction; the first pseudo-finger electrode strips are located in the first spacing area, and the second pseudo-finger electrode strips are located in the second spacing area.

10. The surface acoustic wave resonator device according to claim 9, characterized in that: The projection of the first load portion toward the substrate is also located in part of the first spacing area, and the projection of the first load portion toward the substrate partially overlaps with the projection of the first dummy electrode toward the substrate; the projection of the second load portion toward the substrate is also located in part of the second spacing area, and the projection of the second load portion toward the substrate partially overlaps with the projection of the second dummy electrode toward the substrate.

11. The surface acoustic wave resonator device according to claim 1, 9 or 10, characterized in that: The first load portion is an integral structure extending along the first direction; the second load portion is an integral structure extending along the first direction.

12. The surface acoustic wave resonator device according to claim 11, characterized in that: The projection of the first load portion toward the substrate covers the projection of the first electrode strip located in the first edge region toward the substrate, and covers the projection of the second electrode strip located in the first edge region toward the substrate; The projection of the second load portion toward the substrate covers the projection of the first electrode strip located in the second edge region toward the substrate, and covers the projection of the second electrode strip located in the second edge region toward the substrate.

13. The surface acoustic wave resonator device according to claim 1, 9 or 10, characterized in that: The first load portion includes: a plurality of first load sub-portions arranged along the first direction; the second load portion includes: a plurality of second load sub-portions arranged along the first direction.

14. The surface acoustic wave resonator device according to claim 13, characterized in that: The projection of the first load sub-portion toward the substrate covers the projection of the first electrode strip located in the first edge region toward the substrate, or covers the projection of the second electrode strip located in the first edge region toward the substrate; The projection of the second load sub-portion toward the substrate covers the projection of the first electrode strip located in the second edge region toward the substrate, or covers the projection of the second electrode strip located in the second edge region toward the substrate.

15. The surface acoustic wave resonator device according to claim 1, characterized in that: Projections of the first load portion and the second load portion toward the substrate are located within a projection range of the isolation layer toward the substrate.

16. The surface acoustic wave resonator device according to claim 1, characterized in that: The materials of the first load part and the second load part include: metal material or insulating material; the metal material includes: aluminum, copper, platinum, tungsten, molybdenum, chromium, titanium, tantalum, magnesium or copper-aluminum alloy; the insulating material includes: silicon, silicon oxide, silicon nitride, aluminum oxide, silicon oxynitride, polyimide, photoresist, polycrystalline silicon, high-resistance silicon or amorphous silicon.

17. A method for forming a surface acoustic wave resonator device, characterized in that: include: providing a substrate; providing a piezoelectric layer; forming an intermediate layer, the intermediate layer being located between the substrate and the piezoelectric layer; An electrode structure is formed on the piezoelectric layer; wherein forming the electrode structure comprises: Forming a first bus and a second bus extending along a first direction and arranged in parallel along a second direction, wherein the first direction is perpendicular to the second direction; forming a plurality of first electrode strips connected to the first bus, wherein the plurality of first electrode strips are arranged in parallel along a first direction; forming a plurality of second electrode strips connected to the second bus, wherein the plurality of second electrode strips are arranged in parallel along the first direction, and the first electrode strips and the second electrode strips are arranged alternately; A first spacing area, an overlap area, and a second spacing area are sequentially arranged along the second direction between the first bus and the second bus, the first electrode strip and the second electrode strip in the overlap area overlap along the first direction, the overlap area includes a first edge area, a middle area, and a second edge area, the first edge area is located between the first spacing area and the middle area, and the second edge area is located between the second spacing area and the middle area; forming a protective layer on the piezoelectric layer, wherein the protective layer covers the surface of the electrode structure; forming an isolation layer on the protective layer, wherein the isolation layer has an opening, the opening exposing the protective layer, a projection of the opening toward the substrate coincides with the middle area, and a projection of the isolation layer toward the substrate is at least located in the first edge area and the second edge area, and is not located in the middle area; A load structure is formed on the isolation layer; wherein forming the load structure comprises: forming a first load portion, wherein a projection of the first load portion toward the substrate is located in the first edge region, and a sound velocity in the first edge region is smaller than a sound velocity in the middle region; A second load portion is formed, wherein a projection of the second load portion toward the substrate is located in the second edge region, and a sound velocity in the second edge region is smaller than a sound velocity in the middle region.

18. The method for forming a surface acoustic wave resonator device according to claim 17, wherein: Forming the electrode structure also includes: forming a plurality of first pseudo-finger electrode strips connected to the first bus, the first electrode strips and the first pseudo-finger electrode strips are arranged at intervals along the first direction, and the first pseudo-finger electrode strips and the corresponding second electrode strips are arranged along the second direction; forming a plurality of second pseudo-finger electrode strips connected to the second bus, the second electrode strips and the second pseudo-finger electrode strips are arranged at intervals along the first direction, and the second pseudo-finger electrode strips and the corresponding first electrode strips are arranged along the second direction; the first pseudo-finger electrode strips are located in the first spacing area, and the second pseudo-finger electrode strips are located in the second spacing area.

19. The method for forming a surface acoustic wave resonator device according to claim 18, wherein: The projection of the first load portion toward the substrate is also located in part of the first spacing area, and the projection of the first load portion toward the substrate partially overlaps with the projection of the first dummy electrode toward the substrate; the projection of the second load portion toward the substrate is also located in part of the second spacing area, and the projection of the second load portion toward the substrate partially overlaps with the projection of the second dummy electrode toward the substrate.

20. The method for forming a surface acoustic wave resonator device according to claim 17, 18 or 19, characterized in that: The first load portion is an integral structure extending along the first direction; the second load portion is an integral structure extending along the first direction.

21. The method for forming a surface acoustic wave resonator device according to claim 17, 18 or 19, characterized in that: The first load portion includes: a plurality of first load sub-portions arranged along the first direction; the second load portion includes: a plurality of second load sub-portions arranged along the first direction.

22. The method for forming a surface acoustic wave resonator device according to claim 17, wherein: The method for forming the isolation layer comprises: forming an isolation material layer on the protection layer; and performing a patterning process on the isolation material layer until the surface of the protection layer is exposed, thereby forming the isolation layer.

Images