Ray detection panel and detection device

Abstract

The embodiment of the invention provides a ray detection panel and a detection device, and the panel comprises a substrate; the scintillator layer is arranged on one side of the substrate, and the scintillator layer responds to the rays to generate optical signals; the plurality of detection units are arranged between the substrate and the scintillator layer, each detection unit comprises a photoelectric conversion unit and a passivation layer, the photoelectric conversion units are used for converting optical signals into electric signals, and the passivation layers cover the photoelectric conversion units; the surface, away from the substrate, of the passivation layer is provided with a light absorption groove, and the orthographic projection, on the substrate, of the light absorption groove is arranged on the periphery of the orthographic projection, on the substrate, of the photoelectric conversion unit in a surrounding mode. According to the technology of the invention, the probability of optical signal crosstalk is reduced, and the sensitivity and precision of the ray detection panel are improved.

Description

Technical Field

[0001] The present application relates to the field of detection technology, and in particular to a ray detection panel and a detection device. Background Art

[0002] Photodetectors are widely used in the medical, security, industrial and other industries. They play an important role in the military and various fields of the national economy and have broad application prospects. Among them, radiation detection imaging technology can convert radiation into digital image signals and become an indispensable part of the medical, non-destructive testing and other industries. Radiation detectors add a layer of scintillator on the basis of photodetectors. The function of the scintillator is to convert radiation into visible light, which is then converted into digital signals by the photodetector. The higher the sensitivity of the photodetector, the smaller the radiation dose required for detection and the less damage to the detected object. In related technologies, since the light emitted by the scintillator cannot be transmitted to the corresponding pixel 100%, part of the light will be emitted to adjacent pixels, causing crosstalk of the light signal and affecting the resolution of the detector. Summary of the invention

[0003] The embodiments of the present application provide a ray detection panel and a detection device to solve or alleviate one or more technical problems in the prior art.

[0004] In a first aspect, an embodiment of the present application provides a ray detection panel, comprising: a substrate; a scintillator layer, arranged on one side of the substrate, the scintillator layer generating a light signal in response to the rays; a plurality of detection units, arranged between the substrate and the scintillator layer, the detection unit comprising a photoelectric conversion unit and a passivation layer, the photoelectric conversion unit being used to convert the light signal into an electrical signal, the passivation layer covering the photoelectric conversion unit; wherein a light absorption groove is arranged on a surface of the passivation layer away from the substrate, the orthographic projection of the light absorption groove on the substrate being arranged around the periphery of the orthographic projection of the photoelectric conversion unit on the substrate.

[0005] In one embodiment, a functional film layer is disposed in the light absorbing groove, and the functional film layer includes a light absorbing film layer and / or a reflective film layer.

[0006] In one embodiment, the material of the light absorbing film layer includes carbon nanomaterials; the material of the reflective film layer includes aluminum or silver.

[0007] In one embodiment, the light absorption groove includes a first side wall and a second side wall arranged opposite to each other, the second side wall is located on a side of the first side wall away from the center of the photoelectric conversion unit, and the first side wall and the second side wall are arranged parallel to each other or at an acute angle.

[0008] In one embodiment, the second sidewall is perpendicular to the substrate.

[0009] In one embodiment, the angle between the first side wall and the second side wall is greater than 30 degrees and less than or equal to 60 degrees.

[0010] In one embodiment, the detection unit also includes a metal electrode and a thin film transistor, the thin film transistor is used to output an electrical signal; the passivation layer includes a first passivation layer and a second passivation layer, the second passivation layer is located on the side of the first passivation layer away from the substrate, the photosensitive layer and the thin film transistor are located in the first passivation layer, the metal electrode is located in the second passivation layer, and the light absorption groove is arranged on the surface of the second passivation layer away from the substrate.

[0011] In one embodiment, the scintillator layer includes a first crystal layer and a second crystal layer which are stacked, the second crystal layer is located on a side of the first crystal layer away from the substrate, and the crystal density of the second crystal layer is greater than that of the first crystal layer.

[0012] In one embodiment, the thickness of the first crystal layer is 10 to 30 um, and the thickness of the second crystal layer is 200 to 300 um.

[0013] In a second aspect, an embodiment of the present application further provides a detection device, comprising the ray detection panel of the above-mentioned embodiment of the present application.

[0014] According to the ray detection panel of the embodiment of the present application, by providing a light absorption groove on the substrate whose orthographic projection is arranged around the periphery of the photoelectric conversion unit, the light generated by the part of the scintillator layer corresponding to any detection unit and emitted toward the adjacent detection unit can be absorbed by the light absorption groove, thereby preventing this part of the light from being incident on the adjacent detection unit, thereby reducing the probability of optical signal crosstalk, and significantly improving the sensitivity and accuracy of the ray detection panel.

[0015] The above summary is for illustrative purposes only and is not intended to be limiting in any way. In addition to the illustrative aspects, embodiments and features described above, further aspects, embodiments and features of the present application will be readily apparent by reference to the accompanying drawings and the following detailed description. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] In the accompanying drawings, unless otherwise specified, the same reference numerals throughout the multiple drawings represent the same or similar parts or elements. These drawings are not necessarily drawn to scale. It should be understood that these drawings only depict some embodiments disclosed in the present application and should not be regarded as limiting the scope of the present application.

[0017] Figure 1 A top view of a radiation detection panel according to an embodiment of the present application is shown;

[0018] Figure 2 A side cross-sectional view showing a radiation detection panel according to an embodiment of the present application;

[0019] Figure 3 A schematic diagram showing the structure of a light absorbing groove of a ray detection panel according to an embodiment of the present application;

[0020] Figure 4 A side cross-sectional view showing another embodiment of a radiation detection panel of the present application;

[0021] Figure 5 A schematic structural diagram of a light absorbing groove of a ray detection panel according to another embodiment of the present application is shown.

[0022] Description of reference numerals:

[0023] Radiation detection panel 100;

[0024] substrate 10;

[0025] Scintillator layer 20; first crystal layer 21; second crystal layer 22;

[0026] Detection unit 30 ; photoelectric conversion unit 31 ; passivation layer 32 ; first passivation layer 32 a ; second passivation layer 32 b ; light absorption groove 321 ; functional film layer 322 ; first side wall 323 ; second side wall 324 ; metal electrode 33 ; thin film transistor 34 . DETAILED DESCRIPTION

[0027] In the following, only some exemplary embodiments are briefly described. As those skilled in the art will appreciate, the described embodiments may be modified in various ways without departing from the spirit or scope of the present application. Therefore, the drawings and descriptions are considered to be exemplary and non-restrictive in nature.

[0028] Figure 1 A top view of the radiation detection panel 100 according to an embodiment of the present application is shown. Figure 2 FIG. 1 is a side cross-sectional view of a radiation detection panel 100 according to an embodiment of the present application. Figure 1 and Figure 2 As shown, the ray detection panel 100 includes a substrate 10, a scintillator layer 20 and a plurality of detection units 30. Specifically, the scintillator layer 20 is disposed on one side of the substrate 10, and the scintillator layer 20 generates a light signal in response to the ray. The plurality of detection units 30 are disposed between the substrate 10 and the scintillator layer 20, and the detection unit 30 includes a photoelectric conversion unit 31 and a passivation layer 32, wherein the photoelectric conversion unit 31 is used to convert the light signal into an electrical signal, and the passivation layer 32 covers the photoelectric conversion unit 31. Among them, a light absorption groove 321 is disposed on the surface of the passivation layer 32 away from the substrate 10, and the orthographic projection of the light absorption groove 321 on the substrate 10 is arranged around the periphery of the orthographic projection of the photoelectric conversion unit 31 on the substrate 10.

[0029] In an embodiment of the present application, the ray may be an X-ray, and the ray detection panel 100 may be a panel of an X-ray detector. The ray detection panel 100 includes a plurality of detection units 30 arranged in an array, wherein the plurality of detection units 30 are arranged in a plurality of rows along a first direction, and are arranged in a plurality of columns along a second direction perpendicular to the first direction. Each detection unit 30 includes a photoelectric conversion unit 31, wherein the photoelectric conversion unit 31 may include a photodiode. Preferably, the photodiode may specifically be a PIN-type photodiode. A PIN-type photodiode is a semiconductor device with high-speed response and high sensitivity, and is composed of a P-type doped layer, an I-type undoped layer, and an N-type doped layer, and is used to detect and receive optical signals and convert them into corresponding electrical signals.

[0030] Exemplarily, the scintillator layer 20 includes a plurality of scintillation areas corresponding one to one with the plurality of detection units 30 , and the scintillation areas are arranged opposite to the corresponding detection units 30 , and the light emitted by each scintillation area is used for the corresponding detection unit 30 to produce a photoelectric effect to generate a corresponding electrical signal.

[0031] It is understandable that the visible light emitted by the scintillator layer 20 after receiving the radiation is absorbed by the photoelectric conversion unit 31. Since the different positions of the detected object absorb the radiation to different degrees, the radiation intensity reaching the scintillator layer 20 is also different, resulting in different luminescence intensities of the scintillator layer 20 at different positions, and then resulting in different amounts of light signals received by the photoelectric conversion unit 31 of the detection unit 30 at different positions, thereby forming an image with object information. In the related art, since the light emitted by the scintillator layer 20 is isotropic, after receiving the radiation carrying the signal, the signal cannot be 100% transmitted to the corresponding detection unit 30, and part of the light will be emitted to the adjacent detection unit 30, resulting in crosstalk of the optical signal, thereby affecting the resolution of the detection panel.

[0032] In the embodiment of the present application, the radiation detection panel 100 is provided with a plurality of light absorption grooves 321 corresponding to the plurality of detection units 30 respectively, and the orthographic projections of the light absorption grooves 321 on the substrate 10 are arranged around the periphery of the orthographic projections of the photoelectric conversion units 31 on the substrate 10 .

[0033] Exemplarily, the light absorption groove 321 is formed by a surface depression on the side of the passivation layer 32 away from the substrate 10, and the orthographic projection of the light absorption groove 321 on the substrate 10 can extend in a ring shape along the periphery of the orthographic projection of the photoelectric conversion unit 31 on the substrate 10. The embodiment of the present application does not specifically limit the width and depth dimensions of the light absorption groove 321, and those skilled in the art can flexibly set them according to actual conditions as long as the absorption effect of light can be achieved. It can be understood that after part of the light emitted by the scintillator layer 20 toward other detection units 30 adjacent to the corresponding detection unit 30 is incident on the light absorption groove 321, it will be absorbed in the light absorption groove 321 or consumed after multiple reflections, thereby preventing this part of the light from entering other adjacent detection units 30.

[0034] In some examples, the depth of the light absorption groove 321 may be 0.8 to 1.2 um, and the width of the light absorption groove 321 may be 5 to 10 um. The width of the light absorption groove 321 may be understood as the size of the light absorption groove 321 in the direction away from the center of the photoelectric conversion unit 31.

[0035] According to the ray detection panel 100 of the embodiment of the present application, by providing a light absorption groove 321 on the substrate 10 which is projected around the periphery of the photoelectric conversion unit 31, the light generated by the portion of the scintillator layer 20 corresponding to any detection unit 30 and emitted toward the adjacent detection unit 30 can be absorbed by the light absorption groove 321, thereby preventing this portion of light from being incident on the adjacent detection unit 30, thereby reducing the probability of optical signal crosstalk, and significantly improving the sensitivity and accuracy of the ray detection panel 100.

[0036] In one embodiment, a functional film layer 322 is disposed in the light absorbing groove 321 , and the functional film layer 322 includes a light absorbing film layer and / or a reflective film layer.

[0037] In some examples, a light absorbing film layer is disposed on the inner wall surface of the light absorbing groove 321 , and the light absorbing film layer is used to absorb the light emitted by the scintillator layer 20 and incident into the light absorbing groove 321 .

[0038] In other examples, the inner wall surface of the light absorption groove 321 is provided with a reflective film layer, which is used to reflect the light in the light absorption groove 321, and the light is emitted in a direction away from the substrate 10 after reflection, or the light intensity gradually decreases to 0 after multiple reflections.

[0039] In some other examples, the inner wall surface of the light absorbing groove 321 may be provided with a stacked light absorbing film layer and a reflective film layer, and the light absorbing film layer and the reflective film layer may be at least one of the stacked layers. Thus, part of the light incident into the light absorbing groove 321 that is not reflected by the reflective film layer can be absorbed by the light absorbing film layer, thereby improving the absorption rate of the light absorbing groove 321.

[0040] Optionally, the material of the light-absorbing film layer includes carbon nanomaterials; and the material of the reflective film layer includes aluminum or silver.

[0041] It is understandable that carbon nanomaterials have excellent light absorption properties and can absorb light in the near-ultraviolet, visible and near-infrared bands. This is because the π electron structure in the carbon nanomaterial can couple with the electromagnetic field of light, causing the electron orbits in the horizontal direction to resonate, thereby achieving the purpose of absorbing light. Aluminum has a high reflectivity (about 90% or more) and has good reflective properties in the ultraviolet, visible and infrared regions. In addition, aluminum also has good stability and corrosion resistance. The reflectivity of silver is the highest among all metals, reaching more than 99%, especially in the visible and near-infrared regions. Among them, the reflective film layer can be plated on the inner wall surface of the light absorption groove 321 by physical evaporation or magnetron sputtering.

[0042] In one embodiment, Figure 2 and Figure 3 As shown, the light absorption groove 321 includes a first side wall 323 and a second side wall 324 that are oppositely arranged. The second side wall 324 is located on a side of the first side wall 323 away from the center of the photoelectric conversion unit 31 , and the angle between the first side wall 323 and the second side wall 324 is an acute angle.

[0043] In the embodiment of the present application, the cross-sectional shape of the light absorbing groove 321 can be a triangle or a quadrilateral. Wherein, when the cross-sectional shape of the light absorbing groove 321 is a quadrilateral, the cross-sectional shape of the light absorbing groove 321 has a top edge away from the substrate 10 and a bottom edge adjacent to the substrate 10, and two side edges connected between the top edge and the bottom edge form a first side wall 323 and a second side wall 324.

[0044] In some examples, the angle between the first side wall 323 and the second side wall 324 of the light absorbing groove 321 is an acute angle, and a reflective film layer is deposited on the inner wall surface of the light absorbing groove 321. Figure 3As shown, the angle between the first side wall 323 and the second side wall 324 is θ1, and the angle between the incident direction of the light 1 emitted by the scintillator layer 20 and entering the light absorption groove 321 and the plane where the reflective film layer on the first side wall 323 is located is θ2. It can be understood that when θ2 is less than 90°-θ1, the inner surface of the reflective film layer on the first side wall 323 will reflect the light 1, and the reflected light 1 will continue to reflect after contacting the inner surface of the reflective film layer on the second side wall 324. Therefore, after the light 1 is reflected multiple times between the inner surfaces of the reflective film layers on the first side wall 323 and the second side wall 324, the light intensity of the light 1 is gradually consumed, thereby achieving the absorption effect on the light 1.

[0045] It should be noted that, continue to refer to Figure 3 As shown, for any detection unit 30, the flashing area corresponding to the other adjacent detection units 30 emits a light 2 toward the detection unit 30, and the light 2 is directed toward the outer surface of the reflective film layer on the second side wall 324 of the light absorption groove 321 of the detection unit 30. The light 2 is also reflected when it contacts the outer surface of the reflective film layer on the second side wall 324, and the reflected light 2 is emitted toward the other detection units 30 adjacent to the detection unit 30, thereby increasing the intensity of visible light collected by the other detection units 30, thereby increasing the sensitivity of the detection unit 30.

[0046] It is understandable that the smaller the angle between the outer surface of the reflective film layer on the second side wall 324 and the normal to the plane where the substrate 10 is located, the larger the incident angle range of the light 2 that can be reflected by the outer surface of the reflective film layer on the second side wall 324.

[0047] Optionally, the second side wall 324 is perpendicular to the substrate 10. In this way, the angle between the outer surface of the reflective film layer on the second side wall 324 and the normal of the plane where the substrate 10 is located can be 0, thereby maximizing the incident angle range of the light 2 that can be reflected by the outer surface of the reflective film layer on the second side wall 324, thereby maximizing the sensitivity of the detection unit 30.

[0048] In the embodiment of the present application, the smaller the angle θ1 between the first side wall 323 and the second side wall 324 is, the larger the range of incident angles of the light 1 entering the light absorption groove 321 that can be reflected by the light absorption groove 321 is (i.e., θ2 < 90°-θ1); at the same time, the larger the angle θ1 between the first side wall 323 and the second side wall 324 is, the larger the opening area of ​​the light absorption groove 321 is when the depth of the light absorption groove 321 remains unchanged, and the corresponding amount of light 1 entering the light absorption groove 321 is also greater. Based on this, those skilled in the art can flexibly set the specific value of the angle θ1 between the first side wall 323 and the second side wall 324 in combination with the above situation, and the embodiment of the present application does not specifically limit this.

[0049] Optionally, an angle between the first side wall 323 and the second side wall 324 is greater than 30 degrees and less than or equal to 60 degrees.

[0050] Preferably, the angle between the first side wall 323 and the second side wall 324 is 45 degrees. This arrangement can ensure that the incident angle range of the light 1 reflected by the light absorbing groove 321 is large, and at the same time, the amount of light that can be absorbed by the light absorbing groove 321 can be ensured.

[0051] In other examples, the angle between the first side wall 323 and the second side wall 324 of the light absorption groove 321 is an acute angle, and a light absorption film layer is deposited on the inner wall surface of the light absorption groove 321. It can be understood that the larger the angle between the first side wall 323 and the second side wall 324, the larger the opening area of ​​the light absorption groove 321, and the correspondingly greater the amount of light 1 entering the light absorption groove 321. In some optional examples, the angle between the first side wall 323 and the second side wall 324 of the light absorption groove 321 can be greater than or equal to 60 degrees and less than 90 degrees.

[0052] In one embodiment, Figure 4 and Figure 5 As shown, the light absorbing groove 321 includes a first side wall 323 and a second side wall 324 that are oppositely disposed. The second side wall 324 is located on a side of the first side wall 323 away from the center of the photoelectric conversion unit 31 , and the first side wall 323 and the second side wall 324 are parallel to each other.

[0053] Exemplarily, the cross-sectional shape of the light absorbing groove 321 may be a rectangle, and the first side wall 323 and the second side wall 324 are both perpendicular to the plane where the substrate 10 is located.

[0054] It can be understood that when the depth of the light absorption groove 321 remains unchanged, the incident angle range θ3 of the light 3 absorbed by the light absorption groove 321 depends on the opening width of the light absorption groove 321. Those skilled in the art can set the opening width of the light absorption groove 321 according to actual conditions, and the embodiments of the present application do not make specific limitations on this.

[0055] In one embodiment, the detection unit 30 also includes a metal electrode 33 and a thin film transistor 34, the thin film transistor 34 is used to output an electrical signal; the passivation layer 32 includes a first passivation layer 32a and a second passivation layer 32b, the second passivation layer 32b is located on the side of the first passivation layer 32a away from the substrate 10, the photosensitive layer and the thin film transistor 34 are located on the first passivation layer 32a, the metal electrode 33 is located on the second passivation layer 32b, and the light absorption groove 321 is arranged on the surface of the second passivation layer 32b away from the substrate 10.

[0056] Exemplarily, the thin film transistor 34 is used to store the electrical signal generated by the photoelectric conversion unit 31 in the off state, and output the stored electrical signal in the on state. The thin film transistor 34 and the photoelectric conversion unit 31 are arranged in the first passivation layer 32a in the same layer, and the two are spaced apart from each other. The first passivation layer 32a is provided with a via, and the metal electrode 33 is electrically connected to the gate of the thin film transistor 34 through the via to output a driving signal to the thin film transistor 34.

[0057] In some specific examples, the light absorption groove 321 can be prepared by an etching process. The materials of the first passivation layer 32a and the second passivation layer 32b can include SiO 2 , used to electrically isolate and protect components such as the metal electrode 33, the photoelectric conversion unit 31 and the thin film transistor 34.

[0058] In one embodiment, the scintillator layer 20 includes a first crystal layer 21 and a second crystal layer 22 which are stacked. The second crystal layer 22 is located on a side of the first crystal layer 21 away from the substrate 10 , and the crystal density of the second crystal layer 22 is greater than that of the first crystal layer 21 .

[0059] In the embodiment of the present application, the material of the scintillator layer 20 may include cesium iodide. In addition, a small amount of impurity atoms are doped into the scintillator layer 20 to serve as an "activator".

[0060] In some specific examples, the thickness of the first crystal layer 21 is 10 to 30 um, and the thickness of the second crystal layer 22 is 200 to 300 um. Among them, the first crystal layer 21 can be a broken crystal layer, and the second crystal layer 22 can be a regular layer. It should be noted that the cesium iodide crystals in the first crystal layer 21 are formed during the initial growth, the density of the cesium iodide crystals is low, and the crystal column orientation is very messy. The cesium iodide crystals in the second crystal layer 22 are formed during the later growth, the density of the cesium iodide crystals is high, and the crystal column orientation is relatively regular. Since the depth of the light absorption groove 321 is about 1 um, and the thickness of the scintillator layer 20 is hundreds of microns, the groove depth of the light absorption groove 321 has a very small effect on the flatness of the scintillator layer 20, and by arranging the first crystal layer 21 (i.e., the broken crystal layer) adjacent to the light absorption groove 321, the effect of the light absorption groove 321 on the flatness of the scintillator layer 20 can be further reduced.

[0061] In a second aspect, the present application also provides a detection device, including the ray detection panel of the above embodiment of the present application. The detection device of the embodiment of the present application can be applied to the fields of medical treatment, security inspection and non-destructive industrial inspection.

[0062] Exemplarily, the detection device may further include a shell, and the radiation detection panel is disposed in the shell.

[0063] Exemplarily, the detection device may further include a processor. The processor and the radiation detection panel may communicate electrically via wired or wireless means. During operation, the radiation detection panel may output the converted electrical signal to the processor, and the processor may perform data processing on the electrical signal to generate a corresponding image.

[0064] Exemplarily, the detection device may further include a display, which is in electrical communication with the processor via wired or wireless means and is used to display the image generated by the processor.

[0065] In addition, other components of the radiation detection device in the above embodiment can be adopted by various technical solutions known to ordinary technicians in this field now and in the future, and will not be described in detail here.

[0066] In the description of this specification, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present application.

[0067] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of this application, the meaning of "plurality" is two or more, unless otherwise clearly and specifically defined.

[0068] In this application, unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection, an electrical connection, or a communication; it can be a direct connection, or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to specific circumstances.

[0069] In the present application, unless otherwise clearly specified and limited, a first feature being "above" or "below" a second feature may include that the first and second features are in direct contact, or may include that the first and second features are not in direct contact but are in contact through another feature between them. Moreover, a first feature being "above", "above" and "above" a second feature includes that the first feature is directly above and obliquely above the second feature, or simply indicates that the first feature is higher in level than the second feature. A first feature being "below", "below" and "below" a second feature includes that the first feature is directly below and obliquely below the second feature, or simply indicates that the first feature is lower in level than the second feature.

[0070] The disclosure above provides many different embodiments or examples to realize the different structures of the present application. In order to simplify the disclosure of the present application, the parts and settings of specific examples are described above. Of course, they are only examples, and the purpose is not to limit the present application. In addition, the present application can repeat reference numerals and / or reference letters in different examples, and this repetition is for the purpose of simplification and clarity, which itself does not indicate the relationship between the various embodiments and / or settings discussed.

[0071] The above is only a specific implementation of the present application, but the protection scope of the present application is not limited thereto. Any technician familiar with the technical field can easily think of various changes or substitutions within the technical scope disclosed in the present application, which should be included in the protection scope of the present application. Therefore, the protection scope of the present application should be based on the protection scope of the claims.

Claims

1. A ray detection panel, characterized in that, it includes: a substrate; a scintillator layer disposed on one side of the substrate, and the scintillator layer generates an optical signal in response to rays; a plurality of detection units disposed between the substrate and the scintillator layer, and each detection unit includes a photoelectric conversion unit and a passivation layer, the photoelectric conversion unit is configured to convert the optical signal into an electrical signal, and the passivation layer covers the photoelectric conversion unit; wherein, a light absorption groove is provided on the surface of the passivation layer away from the substrate, and the orthographic projection of the light absorption groove on the substrate surrounds the orthographic projection of the photoelectric conversion unit on the substrate.

2. The ray detection panel according to claim 1, characterized in that, a functional film layer is provided in the light absorption groove, and the functional film layer includes a light absorption film layer and / or a reflection film layer.

3. The ray detection panel according to claim 2, characterized in that, the material of the light absorption film layer includes a carbon nanomaterial; the material of the reflection film layer includes aluminum or silver.

4. The ray detection panel according to claim 1, characterized in that, the light absorption groove includes a first side wall and a second side wall which are oppositely arranged, the second side wall is located on the side of the first side wall away from the center of the photoelectric conversion unit, and the first side wall and the second side wall are parallel to each other or arranged at an acute angle.

5. The ray detection panel according to claim 4, characterized in that, the second side wall is perpendicular to the substrate.

6. The ray detection panel according to claim 4, characterized in that, the included angle between the first side wall and the second side wall is greater than 30 degrees and less than or equal to 60 degrees.

7. The ray detection panel according to any one of claims 1 to 6, characterized in that, each detection unit further includes a metal electrode and a thin film transistor, and the thin film transistor is configured to output the electrical signal; the passivation layer includes a first passivation layer and a second passivation layer, the second passivation layer is located on the side of the first passivation layer away from the substrate, the photosensitive layer and the thin film transistor are located in the first passivation layer, the metal electrode is located in the second passivation layer, and the light absorption groove is provided on the surface of the second passivation layer away from the substrate.

8. The ray detection panel according to any one of claims 1 to 6, characterized in that, the scintillator layer includes a first crystal layer and a second crystal layer which are stacked, the second crystal layer is located on the side of the first crystal layer away from the substrate, and the crystal density of the second crystal layer is greater than that of the first crystal layer.

9. The ray detection panel according to claim 8, characterized in that, the thickness of the first crystal layer is 10 to 30 um, and the thickness of the second crystal layer is 200 to 300 um.

10. A detection device, characterized in that, it includes the ray detection panel according to any one of claims 1 to 9.

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