Electroacoustic resonator

Abstract

Aspects of the present disclosure relate to wireless communications, and high frequency filters with resonators. One aspect is an apparatus that includes first and second busbars, and electrode fingers coupled between the busbars, where the electrode fingers extend different distances toward opposite busbars such that second ends of each of the electrode fingers collectively form a waveform. The apparatus also includes a plurality of gap reflectors positioned between the waveform and the nearest bus bar.

Description

Technical Field

[0001] The present disclosure generally relates to wireless communication and, more particularly, to high-frequency filters that may be implemented with electroacoustic resonators. For example, aspects of the present disclosure relate to using wave structures at one or more ends of electrode fingers in an electroacoustic filter (e.g., to reduce performance degradation caused by resonances within the device). Background Art

[0002] Electronic devices include conventional computing devices such as desktop computers, laptop computers, tablet computers, smart phones, wearable devices such as smart watches, Internet servers, and the like. These various electronic devices provide information, entertainment, social interaction, security, safety, productivity, transportation, manufacturing, and other services to human users. Many functions of these various electronic devices rely on wireless communication. Wireless communication systems and devices are widely deployed to provide various types of communication content such as voice, video, packet data, messaging, broadcasting, and the like. These systems may be capable of supporting communication with multiple users by sharing available system resources (e.g., time, frequency, and power). Examples of such systems include code division multiple access (CDMA) systems, time division multiple access (TDMA) systems, frequency division multiple access (FDMA) systems, and orthogonal frequency division multiple access (OFDMA) systems (e.g., long term evolution (LTE) systems or new radio (NR) systems).

[0003] The wireless communication transceivers used in these electronic devices typically include multiple radio frequency (RF) filters for filtering signals at a particular frequency or frequency range. Electroacoustic devices (e.g., "acoustic filters") are used in many applications for filtering high-frequency (e.g., generally greater than 100 MHz) signals. Using a piezoelectric material as the vibrating medium, an acoustic resonator operates by transforming an electrical signal wave propagating along an electrical conductor into an acoustic wave propagating through the piezoelectric material. The acoustic wave propagates at a speed having a much smaller magnitude than the propagation speed of an electromagnetic wave. Generally, the magnitude of the propagation speed of a wave is proportional to the magnitude of the wavelength of the wave. Thus, after converting the electrical signal into an acoustic signal, the wavelength of the acoustic signal wave is significantly smaller than the wavelength of the electrical signal wave. The resulting smaller wavelength of the acoustic signal enables the use of smaller filter devices to perform the filtering. This permits the use of acoustic resonators in electronic devices having size constraints such as the electronic devices listed above (e.g., specifically including portable electronic devices such as cellular telephones). Summary of the Invention

[0004] Various aspects of the present disclosure describe elements of filter circuits for wireless communication systems. As described above, electroacoustic resonators may be used in such filter circuits. In some configurations, harmonics of such resonators may be generated incidentally with desired performance, and such harmonics may interfere with other signals in the wireless communication device. Various aspects described herein include structures for suppressing such harmonics.

[0005] In an illustrative example, a wireless communication device is provided. The wireless communication device includes: a first busbar; a second busbar, the second busbar being parallel to the first busbar; a plurality of electrode fingers, wherein the electrode fingers coupled to the first busbar are interlaced with the electrode fingers coupled to the second busbar to form an electroacoustic interdigital transducer, and wherein the electrode fingers in the plurality of electrode fingers extend different distances toward the relative busbar, so that the ends of the plurality of electrode fingers closest to the relative busbar form a waveform; a first plurality of gap reflectors, the first plurality of gap reflectors are parallel to the first busbar, the first plurality of gap reflectors are positioned in a first barrier region between the first busbar and the electrode fingers coupled to the second busbar; and a second plurality of gap reflectors, the second plurality of gap reflectors are parallel to the second busbar, the second plurality of gap reflectors are positioned in a second barrier region between the second busbar and the electrode fingers coupled to the first busbar.

[0006] Another aspect is an electroacoustic resonator. The electroacoustic resonator includes: a first busbar; a second busbar, the second busbar being parallel to the first busbar; a plurality of electrode fingers, wherein the electrode fingers coupled to the first busbar are interlaced with the electrode fingers coupled to the second busbar to form an electroacoustic interdigital transducer, and wherein adjacent electrode fingers attached to the same busbar in the plurality of electrode fingers extend different distances toward the opposite busbar; a first plurality of gap reflectors, the first plurality of gap reflectors being parallel to the first busbar, the first plurality of gap reflectors being positioned between the first busbar and the electrode fingers coupled to the second busbar; and a second plurality of gap reflectors, the second plurality of gap reflectors being parallel to the second busbar, the second plurality of gap reflectors being positioned between the second busbar and the electrode fingers coupled to the first busbar.

[0007] Some such aspects are configured wherein the electrode fingers coupled to the first busbar each include a first end and a second end and extend perpendicularly from the first busbar toward the second busbar, wherein the first end is coupled to the first busbar, wherein the second end extends perpendicularly from the first busbar toward the second busbar, and wherein the second ends collectively form a waveform. Some such aspects are configured wherein the waveform is a triangular waveform.

[0008] Another aspect is a method for forming an electroacoustic device. The method includes: forming a layer of piezoelectric material; and forming an electrode structure on or above the piezoelectric material, forming the electrode structure includes: forming a first busbar and a second busbar; forming electrode fingers arranged in an interdigitated manner, wherein forming the electrode fingers includes forming a first plurality of electrode fingers coupled to the first busbar and forming a second plurality of electrode fingers coupled to the second busbar, wherein the first plurality of electrode fingers includes electrode fingers of different lengths extending toward the second busbar, so that unconnected ends of the first plurality of electrode fingers collectively form a first waveform, wherein the second plurality of electrode fingers includes electrode fingers of different lengths extending toward the first busbar, so that unconnected ends of the second plurality of electrode fingers collectively form a second waveform; forming a first plurality of interstitial reflectors substantially parallel to the first busbar, the first plurality of interstitial reflectors being positioned between the first busbar and a curve associated with the second waveform without overlapping the second waveform; and forming a second plurality of interstitial reflectors substantially parallel to the second busbar, the second plurality of interstitial reflectors being positioned between the second busbar and a curve associated with the first waveform without overlapping the first waveform.

[0009] Such aspects are operable wherein forming the electrode structure further comprises forming a first well by forming a first emphasis section wherein the electrode fingers are positioned on a first waveform; and forming a second well by forming a second emphasis section wherein the electrode fingers are positioned on a second waveform.

[0010] Such aspects are operable where the first weighted section and the second weighted section are formed with an additional finger width. Such aspects are operable where the first weighted section and the second weighted section are formed from material from a dielectric layer.

[0011] Another aspect is an electroacoustic resonator. The electroacoustic resonator includes: a first busbar; a second busbar, the second busbar being parallel to the first busbar; a first plurality of electrode fingers, the first plurality of electrode fingers being coupled to the first busbar and extending in a first direction toward the second busbar without touching the second busbar, each of the first plurality of electrode fingers having a first end coupled to the first busbar and a second end, and each of the first plurality of electrode fingers extending toward the second busbar by a different distance relative to adjacent electrode fingers in the first plurality of electrode fingers, so that the second end of each of the first plurality of electrode fingers together forms a first waveform; a second plurality of electrode fingers, the second plurality of electrode fingers being coupled to the second busbar and extending in a second direction toward the first busbar without touching the first busbar, the second plurality of electrode fingers Each electrode finger in the pole finger-like members has a first end coupled to the second bus and a second end, and each electrode finger-like member in the second plurality of electrode fingers extends toward the first bus at a different distance relative to adjacent electrode fingers in the second plurality of electrode fingers, so that the second end of each electrode finger-like member in the second plurality of electrode fingers jointly forms a second waveform, wherein the first plurality of electrode fingers and the second plurality of electrode fingers are staggered; a first plurality of gap reflectors, which are substantially parallel to the first bus, and the first plurality of gap reflectors are positioned between the first bus and a curve associated with the second waveform; and a second plurality of gap reflectors, which are parallel to the second bus, and the second plurality of gap reflectors are positioned between the second bus and a curve associated with the first waveform.

[0012] Some such aspects may be configured wherein the first plurality of electrode fingers include a first weighted section proximate a first end of each electrode finger in the first plurality of electrode fingers; and the second plurality of electrode fingers include a second weighted section proximate a first end of each electrode finger in the second plurality of electrode fingers.

[0013] Some such aspects may be constructed wherein a first emphasis segment proximate a first end of each electrode finger in a first plurality of electrode fingers is positioned on a curve associated with a second waveform; and a first emphasis segment proximate a first end of each electrode finger in a second plurality of electrode fingers is positioned on a curve associated with the first waveform.

[0014] Some such aspects may be configured wherein each electrode finger of the first plurality of electrode fingers includes a second weighted section at a second end; and

[0015] Each electrode finger of the second plurality of electrode fingers includes a second weighted section at a second end.

[0016] Some such aspects may be configured wherein the first and second weighted sections of each electrode finger of the first plurality of electrode fingers and the first and second weighted sections of each electrode finger of the second plurality of electrode fingers each include respective regions having additional thickness compared to respective center track portions of each corresponding electrode finger.

[0017] Some such aspects may be configured wherein the first and second emphasis sections of each electrode finger of the first plurality of electrode fingers and the first and second emphasis sections of each electrode finger of the second plurality of electrode fingers each include respective regions having additional finger widths compared to respective center track portions of each corresponding electrode finger.

[0018] Some such aspects may be configured where the curve associated with the first waveform comprises a cosine curve; and where the curve associated with the second waveform comprises a sine curve. Some such aspects may be configured where the curve associated with the first waveform and the curve associated with the second waveform each comprise at least one of a cosine curve or a sine curve; and where the curve associated with the first waveform is offset from the curve associated with the second waveform to provide a difference in aperture (e.g., overlapping finger length).

[0019] Some such aspects may be configured wherein the period of the curve associated with the first waveform and the period of the curve associated with the second waveform each include a number of electrode fingers from 10 to 50.

[0020] Some such aspects may also include: a first emphasis section defined by a dielectric layer or a first trimmed section proximate a first end of each electrode finger of a first plurality of electrode fingers; and a second emphasis section defined by a dielectric layer or a second trimmed section proximate a first end of each electrode finger of a second plurality of electrode fingers.

[0021] Some such aspects may be constructed wherein a first plurality of gap reflectors each comprise a metal strip parallel to a first bus bar and spanning across a first plurality of electrode fingers and coupled to at least a portion of the first plurality of electrode fingers; and a second plurality of gap reflectors each comprise a metal strip parallel to a second bus bar and spanning across a second plurality of electrode fingers and coupled to at least a portion of the second plurality of electrode fingers.

[0022] Some such aspects may also include: a first end reflector at an end of the first track, the first end reflector comprising reflector fingers extending in a vertical direction from the first busbar to the second busbar; a third plurality of electrode fingers coupled to the first busbar between the first plurality of electrode fingers or the second plurality of electrode fingers and the first end reflector, the third plurality of electrode fingers extending in a vertical direction toward the second busbar without touching the second busbar; a fourth plurality of electrode fingers between the first plurality of electrode fingers or the second plurality of electrode fingers The fingers are coupled to the first end reflector to the second bus, and the fourth plurality of electrode fingers extend in a vertical direction toward the first bus without touching the first bus, wherein the third plurality of electrode fingers are staggered with the fourth plurality of electrode fingers, wherein the third plurality of electrode fingers each further include a first emphasis section, wherein each first emphasis section of the third plurality of electrode fingers is approximately equidistant from the first bus along the corresponding electrode finger; and the fourth plurality of electrode fingers each further include a first emphasis section, wherein each first emphasis section of the fourth plurality of electrode fingers is approximately equidistant from the second bus along the corresponding electrode finger.

[0023] Some such aspects can be configured wherein the first plurality of interstitial reflectors includes interstitial reflectors having different lengths and / or wherein the different lengths of the first plurality of interstitial reflectors are defined by a curve associated with the second waveform.

[0024] In some aspects, the apparatus described above may include: a mobile device having a camera for capturing one or more pictures. In some aspects, the apparatus described above may include: a display for displaying one or more pictures. This summary is not intended to identify key or essential features of the claimed subject matter, nor is it intended to be used in isolation to determine the scope of the claimed subject matter. The subject matter should be understood by reference to appropriate portions of the entire specification of this patent, any or all drawings, and each claim.

[0025] The foregoing and other features and embodiments will become more apparent upon reference to the following description, claims and accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] Figure 1A is a diagram of a perspective view of an example of an electroacoustic device.

[0027] Figure 1B yes Figure 1A Illustration of a side view of an electro-acoustic device.

[0028] Figure 2A is a diagram of a top view of an example of an electrode structure of an electroacoustic device.

[0029] Figure 2Bis a diagram showing a top view of another example of the electrode structure of the electroacoustic device.

[0030] Figure 3A is a diagram of a perspective view of another example of the electroacoustic device.

[0031] Figure 3B yes Figure 3A Illustration of a side view of an electro-acoustic device.

[0032] Figure 4 is a diagram of a portion of an electrode structure of an electro-acoustic device aligned with a graph illustrating the distribution of acoustic velocities in different regions of the electro-acoustic device.

[0033] Figure 5A and Figure 5B is a diagram of an example of an electrode structure, illustrating the Figure 4 Examples of different implementations of defined well regions.

[0034] Figure 6 is a representation of a wireless communication device including an electroacoustic resonator according to examples described herein.

[0035] Fig. 7A is a representation of an electroacoustic resonator of various aspects of an example harmonic suppression structure according to various aspects described herein.

[0036] Figure 7B is a representation of an electroacoustic resonator of various aspects of an example harmonic suppression structure according to various aspects described herein.

[0037] Figure 7C is a representation of an electro-acoustic resonator of aspects of an exemplary harmonic suppression gap reflector according to aspects described herein.

[0038] Fig.7D is a representation of an electro-acoustic resonator of aspects of an exemplary harmonic suppression gap reflector according to aspects described herein.

[0039] Fig. 7E is a representation of an electro-acoustic resonator of aspects of an exemplary harmonic suppression gap reflector according to aspects described herein.

[0040] Figure 8 is a representation of an electro-acoustic resonator of aspects of an exemplary harmonic suppression gap reflector according to aspects described herein.

[0041] Fig. 9 is a representation of a wireless communication device including an electroacoustic resonator for harmonic suppression according to various aspects described herein.

[0042] Fig.10is a graph illustrating improvement in device performance for wireless communications with an electroacoustic resonator including harmonic suppression in accordance with various aspects described herein.

[0043] Fig.11 is a flow chart illustrating an example of a method for filtering a signal in a wireless communication device for a multi-band system according to examples described herein.

[0044] Fig.12 is a functional block diagram of at least a portion of an example of a simplified wireless transceiver circuit in which a filter circuit and an associated slotted resonator may be employed.

[0045] Fig.13 A transceiver path that may include an electro-acoustic resonator with harmonic suppression according to various aspects described herein is illustrated.

[0046] Fig.14 is an illustration of an environment including a wireless communication device that can include a resonator with harmonic suppression to achieve improved performance in accordance with various aspects described herein. DETAILED DESCRIPTION

[0047] The specific embodiments described below in conjunction with the drawings are intended as descriptions of exemplary implementations and are not intended to represent the only implementations in which the present invention may be practiced. The term "exemplary" as used throughout this specification means "serving as an example, instance, or illustration" and should not necessarily be interpreted as being superior to or superior to other exemplary implementations. The specific embodiments include specific details for the purpose of providing a thorough understanding of the exemplary implementations. In some examples, some devices are shown in block diagram form. Common drawing elements in the following figures may be identified using the same reference numerals.

[0048] Electroacoustic devices such as surface acoustic wave (SAW) resonators that employ electrode structures on the surface of piezoelectric materials are being designed to cover more frequency ranges (e.g., 500 MHz to 6 GHz), have higher bandwidths (e.g., up to 25%), and have improved efficiency and performance as designs using such devices become more complex. Additionally, such devices may be included in systems that support transmission, reception, and multiple channels at different frequencies within the same wireless communication device. During operation, such SAW resonators may generate harmonics (e.g., second-order and third-order harmonic signals of the main signal). Such harmonics may propagate through parasitic paths to interfere with signals on other signal paths (e.g., a second-order harmonic of a signal in a transmit path resonator interferes with a signal in a SAW or bulk acoustic wave (BAW) receive path resonator).

[0049] Aspects described herein include structures within a SAW resonator that can use tuned structures within a harmonic resonator to suppress certain harmonics, including a wave structure at an end of electrode fingers that are part of the SAW resonator, and additional gap reflectors around the wave structure (e.g., a line perpendicular to the electrode fingers at or around the end of the electrode fingers having the wave structure).

[0050] Aspects of the present application will be described with reference to the drawings.

[0051] Figure 1A FIG. 7 is a perspective view illustration of an example of an electroacoustic device 100. The electroacoustic device 100 may be configured as or be part of a SAW resonator. In some descriptions herein, the electroacoustic device 100 may be referred to as a SAW resonator. However, there may be other types of electroacoustic devices (e.g., BAW or TFBAR) that can be constructed based on the principles described herein. The electroacoustic device 100 includes an electrode structure 104, which may be referred to as an interdigital transducer (IDT), located on a surface of a piezoelectric material 102. The electrode structure 104 generally includes a first comb-shaped electrode structure and a second comb-shaped electrode structure (conductive and typically made of metal), where electrode fingers extend towards each other from two bus bars and are arranged in an interlocking manner (e.g., in an interdigital manner) between the two bus bars. An electrical signal excited (e.g., an AC voltage applied) in the electrode structure 104 is transformed into an acoustic wave 106 that propagates in a particular direction through the piezoelectric material 102. The acoustic wave 106 is transformed back into an electrical signal and provided as an output. In many applications, the piezoelectric material 102 has a particular crystal orientation such that when the electrode structure 104 is arranged relative to the crystal orientation of the piezoelectric material 102, the acoustic wave propagates primarily in a direction perpendicular to the fingers (e.g., parallel to the bus bars). In various examples, circuits described herein having such structures may include microelectroacoustic filters implemented using microelectromechanical systems (MEMS) technology. MEMS technology includes microphysical structures that can have mechanical (e.g., vibrating or acoustic) component characteristics as well as electrical characteristics. In some examples, MEMS fabrication techniques may be used to construct resonators described herein to generate structures having dimensions less than one micrometer.

[0052] Figure 1B is Figure 1A of the electroacoustic device 100 along Figure 1A107 is a side view of the cross section 107 shown. The electroacoustic device 100 is illustrated by a simplified layer stack, which includes a piezoelectric material 102, wherein an electrode structure 104 is disposed on the piezoelectric material 102. The electrode structure 104 is conductive and is typically formed of a metallic material. The piezoelectric material may be formed of a variety of materials such as quartz, lithium tantalate (LiTaO3), lithium niobate (LiNbO3), doped variants of these materials, or other piezoelectric materials. It should be understood that more complex layer stacks including layers of various materials are possible within the stack. For example, optionally, a temperature compensation layer 108 represented by a dashed line may be disposed above the electrode structure 104. The piezoelectric material 102 may be extended with a plurality of interconnected electrode structures disposed thereon to form a multi-resonator filter or to provide a plurality of filters. Although not illustrated, a cover layer may be disposed above the electrode structure 104 when provided as an integrated circuit component. The cover layer is applied so that a cavity is formed between the electrode structure 104 and the lower surface of the cover layer. Electrical vias or bumps may also be included that allow the component to be electrically connected to connectors on the substrate (eg, via flip chip or other techniques).

[0053] Figure 2A 2 is a diagram of a top view of an example of an electrode structure 204a of the electroacoustic device 100. The electrode structure 204a has an IDT 205, which includes a first busbar 222 (e.g., a first conductive segment or conductive track) electrically connected to the first terminal 220 and a second busbar 224 (e.g., a second conductive segment or conductive track) spaced apart from the first busbar 222 and connected to the second terminal 230. A plurality of conductive fingers 226 are connected to the first busbar 222 or the second busbar 224 in an interdigitated manner. The fingers 226 connected to the first busbar 222 extend toward the second busbar 224, but are not connected to the second busbar 224, so that there is a small gap between the ends of these fingers 226 and the second busbar 224. Similarly, the fingers 226 connected to the second busbar 224 extend toward the first busbar 222, but are not connected to the first busbar 222, so that there is a small gap between the ends of these fingers 226 and the first busbar 222.

[0054] In the direction along the generatrix, there is an overlap region including a central region where a portion of one finger overlaps a portion of an adjacent finger, as illustrated by central region 225. The central region 225 including this overlap may be referred to as an aperture, track, or active region, where an electric field is generated between the fingers 226 to propagate acoustic waves in the central region 225 of the piezoelectric material 102. The periodicity of the fingers 226 is referred to as the pitch of the IDT. The pitch may be indicated in various ways. For example, in some aspects, the pitch may correspond to the size of the distance between the fingers in the central region 225. The distance may be defined as, for example, the distance between the center points of each of the fingers (and when the fingers have a uniform thickness, it may be typically measured between the right (or left) edge of one finger and the right (or left) edge of the adjacent finger). In some aspects, the average of the distances between adjacent fingers may be used for the pitch. The frequency at which the piezoelectric material vibrates within a given stack (e.g., a complete stack including a piezoelectric layer and an electrode structure combination) is the self-resonant (also referred to as the "primary resonant") frequency of the electrode structure 204a. This frequency is determined at least in part by the pitch of the IDT 205 and other characteristics of the electroacoustic device 100.

[0055] The IDT 205 is arranged between two reflectors 228, which reflect the acoustic waves back toward the IDT 205 so as to convert the acoustic waves into electrical signals via the IDT 205 in the configuration shown and prevent losses (e.g., confine and prevent the acoustic waves from escaping). Each reflector 228 has a grid structure of two busbars and conductive fingers each connected to the two busbars. The pitch of the reflectors can be similar or the same as the pitch of the IDT 205 to reflect the acoustic waves within the resonant frequency range. However, many configurations are possible.

[0056] When converted back to an electrical signal, the converted electrical signal may be provided as an output, such as one of the first terminal 220 or the second terminal 230 , while the other terminal may be used as an input.

[0057] A variety of electrode configurations are possible. Figure 2A A single-port configuration may be generally illustrated. Other 2-port configurations are also possible. For example, the electrode structure 204a may have an input IDT 205, wherein each terminal 220 and 230 serves as an input terminal. In this case, an adjacent output IDT (not illustrated) positioned between the reflectors 228 and adjacent to the input IDT 205 may be provided to convert the acoustic wave propagating in the piezoelectric material 102 into an electrical signal to be provided at the output terminal of the output IDT.

[0058] Figure 2B2 is a top view of another example of an electrode structure 204b of the electroacoustic device 100. This dual-mode SAW (DMS) electrode structure 204b is illustrated, and the DMS electrode structure is a structure that can induce multiple resonances. The electrode structure 204b includes multiple IDTs and reflectors 228 connected as illustrated in the figure. The electrode structure 204b is provided to illustrate a variety of electrode structures to which the principles described herein can be applied, including Figure 2A The electrode structure 204a and Figure 2B The electrode structure 204b.

[0059] It should be understood that although a certain number of fingers 226 are illustrated, the number of actual fingers and the length and width of the fingers 226 and the busbars may be different in actual implementations. Such parameters depend on the specific application and the desired frequency of the filter. In addition, the SAW filter may include multiple interconnected electrode structures, each of which includes multiple IDTs to achieve a desired passband (e.g., multiple interconnected resonators or IDTs to form a desired filter transfer function).

[0060] Figure 3A is a diagram of a perspective view of another example of an electroacoustic device 300. The electroacoustic device 300 (which may be configured as a SAW resonator or a portion thereof, for example) is similar to Figure 1A 1 , but with a different layer stack. Specifically, electroacoustic device 300 includes a thin piezoelectric material 302 provided on a substrate 310 (e.g., silicon). In some cases, electroacoustic device 300 may be referred to as a thin film SAW resonator (TF-SAW). Based on the type of piezoelectric material 302 used (e.g., typically having a higher coupling factor relative to electroacoustic device 100 of FIG. 1 ) and the controlled thickness of piezoelectric material 302, the specific acoustic wave mode excited may be related to the Figure 1A The acoustic wave modes in the electroacoustic device 100 are slightly different. Based on the design (thickness of the layers and choice of materials, etc.), Figure 1A The electroacoustic device 300 may have a higher Q factor than the electroacoustic device 100. The piezoelectric material 302 may be, for example, lithium tantalate (LiTaO3) or some doped variant thereof. Figure 3A Another example of a piezoelectric material 302 may be lithium niobate (LiNbO3). Generally speaking, the substrate 310 may be substantially thicker than the piezoelectric material 302 (e.g., as an example, may be approximately 50 to 100 times thicker, or more times thicker). The substrate 310 may include other layers (or other layers may be included between the substrate 310 and the piezoelectric material 302).

[0061] Figure 3B yes Figure 3A FIG. 3 is an illustration of a side view of an electroacoustic device 300 showing an exemplary layer stackup (along section 307 ). Figure 3BIn the example shown, the substrate 310 may include sub-layers that may have a higher resistance (e.g., relative to other layers, i.e., high resistivity layers), such as the substrate sub-layer 310-1 (e.g., made of silicon). The substrate 310 may also include a well-rich layer 310-2 (e.g., polysilicon). The substrate 310 may also include a compensation layer 310-3 (e.g., silicon dioxide (SiO2) or another dielectric material) that may provide temperature compensation and other properties. These sub-layers may be considered part of the substrate 310 or their own separate layers. A relatively thin piezoelectric material 302 is provided on the substrate 310 with a specific thickness for providing a specific acoustic wave mode (e.g., compared to the Figure 1A electroacoustic device 100, where the thickness of the piezoelectric material 102 is not an important design parameter beyond a certain thickness, and compared to the Figure 3A and Figure 3B piezoelectric material 302 of the electroacoustic device 300 may generally be thicker). The electrode structure 304 is positioned above the piezoelectric material 302. Additionally, in some aspects, there may be one or more layers (not shown) above the electrode structure 304 (e.g., such as a thin passivation layer).

[0062] Based on the type, thickness, and overall layer stack of the piezoelectric material, the coupling to the electrode structure 304 and the sound velocity within the piezoelectric material in different regions of the electrode structure 304 may vary between different types of electroacoustic devices such as between the Figure 1A electroacoustic device 100 and Figure 3A and Figure 3B electroacoustic device 300.

[0063] Figure 4 is a view of a part of the electrode structure 404 of an electroacoustic device that is aligned with a graph of the sound velocity distribution in different regions of an exemplary electroacoustic device. Figure 4 The electrode structure 404 of the Figure 2A shows a part of an IDT 405 similar to the IDT described in reference Figure 2A that has a first bus bar 422, a second bus bar 424, and finger-like fingers 426. Since the angle and frequency position of the lateral acoustic wave mode depend on the directional sound velocity, in one aspect, the lateral velocity distribution within the acoustic track can be designed in a way that reduces the lateral acoustic wave mode and promotes the excitation of the main mode or fundamental mode. Specifically, the electrode structure 404 (and potentially other layers) can be adjusted in different regions of the electrode structure 404 to adjust the lateral velocity distribution within the acoustic track to reduce the lateral acoustic mode. In certain aspects, the sound velocity may correspond to the sound velocity of the fundamental mode of the electroacoustic device, but in certain aspects, this velocity can be more generally understood to capture different modes or be related to different modes.

[0064] Figure 4The example of illustrates different regions of the electrode structure 404 that can be designed or structurally modified to adjust the lateral velocity distribution. Figure 2A As described, the central region 425 (or active track region or aperture) is defined where the interdigitated fingers overlap (e.g., in a direction parallel to the busbars) and is where the primary or fundamental mode is generally expected and designed to propagate perpendicular to the fingers 426.

[0065] In one aspect, a barrier region 429 (e.g., a gap region) is defined outside the center region 425, which includes an area between the first busbar 422 and the finger 426a connected to the opposing second busbar 424. More specifically, the barrier region 429 includes a first barrier region 429a and a second barrier region 429b. The first barrier region 429a is defined between the first busbar 422 and the unconnected ends of the first group of fingers 426a connected to the second busbar 424. The second barrier region 429b is defined between the second busbar 424 and the unconnected ends of the second group of fingers 426b connected to the first busbar 422. The barrier region 429 may sometimes correspond to or be referred to as a lateral gap, which is included in the IDT to separate metal structures of different potentials (i.e., individual fingers connected to opposing busbars, where the busbars have different potentials).

[0066] To adjust the lateral velocity profile, the number of fingers per wave length in the barrier region 429 (e.g., one finger, rather than two fingers as illustrated in the central region 425) and the distance or size of the barrier region 429 are selected (and / or other characteristics in the barrier region 429 are adjusted) so that there is a higher acoustic wave velocity, particularly higher than in the central region 425. A graph 440 to the right of the electrode structure 404 illustrates the relative velocity of each region of the electrode structure 404, wherein the y-axis represents the different regions of the electrode structure 404 and is aligned with the different regions along the direction in which the fingers 426 extend. As illustrated by line 450 (see dashed portion), the acoustic velocity along the x-axis is higher in the barrier region 429 compared to the acoustic velocity in the central region 425 (e.g., the active track). Generally speaking, a relatively high wave velocity can be a hindrance to acoustic waves because acoustic waves can tend to propagate more easily where the velocity is lower. The distance / width of barrier region 429 (e.g., in some aspects, at least 2 to 3 microns (μm) to adequately separate metal structures of different potentials, in other aspects, as little as 200 nanometers (nm) or as much as 8 μm to 10 μm) provides sufficient barrier and prevents acoustic waves from coupling to external areas.

[0067] In addition to the barrier region 429, an additional region referred to as a well region 427 is provided at either outer boundary (e.g., defined on each end) of the central region 425 overlapped by the fingers 426. Specifically, the first well region 427a is positioned toward or at a first end (e.g., boundary) of the central region 425 (e.g., active region) and between the first barrier region 429a and the central region 425 (e.g., in a region of the finger 426 toward an end of the first group of fingers 426a connected to the second bus 424, wherein the region is away from the second bus 424). The second well region 427b is positioned toward or at a second end (opposite to the first end) of the central region 425 and between the second barrier region 429b and the central region 425 (e.g., in a region of the finger 426 toward an end of the second group of fingers 426b connected to the first bus 422, wherein the region is away from the first bus 422). The trap region 427 may correspond to an outer edge or outer region of the central region 425. Structural features in the trap region 427 that are different from those in the central region 425 are provided to produce a region of the electroacoustic device aligned with the trap region 427 that has a reduced acoustic wave velocity, particularly lower than the acoustic wave velocity in the central region 425. Such structural features may include widening the electrode fingers 426 in the trap region 427 or increasing the height of the electrode fingers 426 in the trap region 427, but many specific implementations are possible. In general, where the velocity is lower, acoustic waves may tend to propagate more easily. Thus, the trap region 427 having a lower acoustic wave velocity can provide a way to shape the lateral amplitude distribution of the fundamental acoustic wave mode.

[0068] As a result of the design and selection of the sizes of the barrier region 429, the trap region 427, and the central region 425, the amplitude of the fundamental acoustic wave mode in the lateral direction (e.g., in the direction of the finger 426) may follow a rectangular distribution, as indicated by line 444 of graph 440. The rectangular distribution caused by the different acoustic wave velocities in different regions corresponds to a mode in which undesirable lateral modes are suppressed. Line 442 in graph 440 corresponds to the amplitude of the fundamental mode in the lateral direction in the absence of a trap region that may cause undesirable lateral modes. Line 446 in graph 440 corresponds to the amplitude of the fundamental mode in the lateral direction in the case where the trap region 427 is not deep enough (e.g., the acoustic waves are not sufficiently slowed down in the region). Despite the improvement, undesirable lateral modes may continue to affect performance. Line 448 in graph 440 corresponds to the amplitude of the fundamental mode in the lateral direction in the case where the trap region 427 is too deep. This may also cause undesirable lateral acoustic wave modes. By adjusting the characteristics of barrier region 429 and trap region 427, the fundamental mode amplitude in the lateral direction can be adjusted to conform to the rectangular distribution indicated by line 444 and the lateral mode is effectively suppressed. The technique for providing barrier region 429 and trap region 427 in such a configuration is sometimes referred to as piston mode.

[0069] Figure 5A and Figure 5B is a diagram of an example of electrode structures 504a and 504b, illustrating the Figure 4 1 and 527-2. Barrier region 529 is shown but not specifically illustrated or drawn to scale. Instead, electrode structures 504a and 504b are provided to illustrate well region 527-1 ( Figure 5A ) and 527-2( Figure 5B ) is implemented. For example, Figure 5A In the electrode structure 504a of FIG. 5 , the well region 527-1 is illustrated as a portion 509 of the electrode structure 504a having an increased thickness relative to other portions of the active region. A side view along the cross section 531 is shown on the right. The increased height may result in a slower acoustic velocity in the well region 527-1. In another specific implementation, as Figure 5B As illustrated by the electrode structure 504b of FIG. 5 , the electrode structure 504b within the well region 527-2 has a wider width than the active region. These wider widths can result in slower acoustic velocities in the well region 527-2. In some implementations, the well region 527-2 can have both a wider width and an increased height (e.g., thickness) than the active region, such as Figure 5A Thus, any of the techniques described herein with respect to well region 527-2 may be combined. In other implementations, other materials (e.g., dielectric material layers) may be positioned within well region 427 ( Figure 4) to reduce the acoustic velocity in the trap region 427 (e.g., or other types of mass loading). In addition, one or more trimming operations can adjust or have structural effects in various regions such that the relative acoustic velocity in the trap region 427 is reduced relative to the central region 425. Other specific implementations using different techniques can also be used such that the structural characteristics in the trap region 427 are adjusted and different from the structural characteristics in the central region 425 such that there is a reduced acoustic velocity in the trap region 427.

[0070] In some electroacoustic device designs, barrier region 429 may be a sufficient parameter that can be adjusted to create a desired transverse acoustic velocity distribution to work in conjunction with trap region 427 to suppress transverse acoustic modes (e.g., achieve relatively higher acoustic velocities than in the active region). However, for certain other electroacoustic devices where different materials are desired, configuring the size of barrier region 429 may not produce a transverse mode acoustic distribution that makes the acoustic velocity in barrier region 429 high enough to produce the desired transverse velocity distribution. For example, Figure 3A and Figure 3B A thin film type electroacoustic device 300 is illustrated. In some implementations, the piezoelectric material 302 in this electroacoustic device 300 can be formed of lithium tantalate (LiTaO3). The acoustic velocity profile of lithium tantalate can differ from other systems based on coupling factors (and can be partially attributed to the specific layer stacking and thickness of lithium tantalate, such as for Figure 3A and Figure 3B 429 ). For example, for a lithium tantalate-based device, the velocity difference between the center region 425 and the barrier region 429 may be low, and thus the lateral modes may not be easily confined to the entire stopband width of the electroacoustic device 300. Additionally, in some systems, in the center region 425, the increased frequency may correspond to an increased angle with the main acoustic wave propagation direction (e.g., sometimes referred to as "convex slowness"). In some systems (e.g., in some lithium tantalate-based systems), in the barrier region 429, the mode frequency decreases with increasing propagation angle ("concave slowness" in the barrier region 429). Concave slowness may be attractive to acoustic waves and may form parasitic wave modes. Therefore, having concave slowness in the barrier region 429 may result in the excitation of undesired modes within the barrier region 429.

[0071] Certain techniques for addressing these issues with electroacoustic devices may be difficult to implement for higher metallization ratios and higher metal heights (and due to other manufacturing difficulties with such solutions) and may increase ohmic losses. In some implementations, the metallization ratio may be between 0.45 and 0.7. The various aspects described herein may be implemented with such metallization ratios. In some implementations, lower metallization ratios (which may be metallization ratios below .55 as described herein) may be implemented with less of the difficulties described above. For example, in some aspects, weighted segments or points on segment electrode fingers formed with increased widths may be more difficult to manufacture with high frequency components and / or high metallization ratios. Additionally, as described in reference Figure 4 The barrier region 429 described (eg, comprising 1 peel wave length) may result in concave slowness in certain configurations, such as when using the above referenced Figure 3A The lithium tantalate based device.

[0072] Figure 6 6 is a representation of a wireless communication device 600 including an electroacoustic resonator 620 according to an example described herein. The wireless communication device 600 may use various filter elements (including one or more electroacoustic resonators 620) to achieve signal characteristics that meet the goals of a given communication system. As described above, the transmit and receive paths of such a wireless communication device may include multiple signal (e.g., transmit and receive) path elements illustrated as including an electroacoustic resonator 620 with a harmonic suppression structure, and an additional signal path element 610. The additional signal path element 610 may include a low noise amplifier (LNA), a mixer, a transmit line, a filter element including a variety of different SAW resonators, a BAW resonator, and other elements. Under high power loads, the SAW may emit harmonic signals that may follow parasitic paths through the wireless communication device 600, which may interfere with the signal in the additional signal path element 610. Such high power loads may particularly appear at the adjustment filter between the amplifier and the transmit antenna in the transmit path after amplification of the signal.

[0073] The electro-acoustic resonator 620 includes both electrode finger gap reflectors 630 and wave-type electrode fingers. As discussed above and further below, the electro-acoustic resonator includes electrode fingers. The electrode finger gap reflectors 630 include metallization lines that are perpendicular to the electrode fingers. The wave-type electrode fingers 640 refer to a pattern formed by the ends of certain electrode fingers, as well as a weighted section of the electrode fingers that may be included in the same pattern, as described in detail below. Such a structure may be formed around the barrier region 429 described above to suppress lateral modes that may contribute to harmonic signals that may propagate through the device. The combination of both the electrode finger gap reflectors 630 and the wave-type electrode fingers 640 may result in significantly improved harmonic suppression compared to each suppression structure without one of them. Details of this improvement in the performance of a device that includes both the electrode finger gap reflectors 630 and the wave-type electrode fingers compared to a device that includes only the electrode finger gap reflectors 630 are described below. Fig.10 The structures and techniques described are applicable to many different types of electroacoustic devices (eg, BAW devices), but include particular advantages to thin film SAW electroacoustic devices and thin film electroacoustic devices using lithium tantalate.

[0074] Fig. 7A 7 is a representation of an electroacoustic resonator 700 of various aspects of an exemplary harmonic suppression structure according to various aspects described herein. Similar to the resonators described above, the electroacoustic resonator 700 includes busbars 725A and 725B, wells 727A and 727B, and track 730. Track 730 is used to filter signals using electroacoustic resonance, as described above. As described above, shear waves within the electroacoustic resonator 700 can propagate to other signal paths (e.g., from a transmit path to a receive path, between transmit paths in a device with multi-channel operation, etc.) both through the signal path including the electroacoustic resonator 700 and via parasitic paths. In order to suppress such harmonic signals, the electroacoustic resonator 700 includes a suppression structure in the form of waveforms 728B and 728B and interstitial reflectors 729A and 729B. Waveforms 728A and 728B may define wells 727A and 727B between the ends of electrode fingers extending from opposing busbars (e.g., well 727A between the ends of electrode fingers extending from busbar 725B and busbar 725A). Interstitial reflectors may similarly operate to damp harmonic signals within such well regions (e.g., interstitial reflector 729A in the region of well 727A).

[0075] In some implementations, a sine or cosine waveform may be used. In other implementations, a triangular wave or other functional smooth shape may be used that may repeat every 10 to 50 electrode fingers. In some implementations, the waveforms are out of phase (e.g., offset from each other along the track) to provide a variation in aperture (e.g., overlapping finger lengths).

[0076] Figure 7B is a representation of a region 701 of an electro-acoustic resonator 700 of aspects of an example harmonic suppression structure according to aspects described herein. Figure 7B Area 701 is Fig. 7A The area 701 includes the area near the busbar 725B ( Figure 7B Region 701 shows the electroacoustic resonator 700 including the first busbar 725A ( Figure 7B The first plurality of electrode fingers 740 extend in a vertical direction from the first bus 725A toward the second bus 725B without touching the second bus 725B. Each electrode finger of the first plurality of electrode fingers has a first end coupled to the first bus 725A and a second end 741 close to the second bus 725B. Such close positioning as used herein may refer to an end extending toward the bus, an end being in a relatively close positioning compared to the size of the resonator, or an end being positioned closer to the bus than the first end of the finger. Each electrode finger in the first plurality of electrode fingers 740 extends a different distance from an adjacent electrode finger of the first plurality of electrode fingers toward the second bus 725B, so that the second end in each of the first plurality of electrode fingers collectively forms a waveform 728B. As can be seen, the leftmost of the fingers 740 extends a different distance away from the busbar 725A (e.g., it is approximately perpendicular to the electrode fingers 740) from the two electrode fingers 740 to the right of the leftmost of the fingers 740. The center electrode finger of the three leftmost electrode fingers 740 has a different length (e.g., the ending distance from the starting busbar) than the two adjacent electrode fingers on either side of the center finger. The directly adjacent electrode fingers are staggered fingers from another set of electrode fingers attached to another busbar 725B. The area opposite to the area 701 of the electroacoustic resonator 700 will include corresponding features on the opposite side of the track 730.

[0077] Region 701 includes a second plurality of electrode fingers 745 coupled to second bus bar 725B and extending in a vertical direction toward first bus bar 725A without touching first bus bar 725A. Each electrode finger in the second plurality of electrode fingers 745 has a first end 746 coupled to second bus bar 725B and a second end (at a position close to first bus bar 725A) proximal to first bus bar 725A. Figure 7B728B. The first plurality of electrode fingers 740 and the second plurality of electrode fingers 745 are interlaced so that each electrode finger, except for the first end finger and the second end finger (e.g., at opposite ends of the track 730), is adjacent to two other electrode fingers connected to the opposite bus. For example, as illustrated, each finger of the first plurality of electrode fingers 740 is adjacent to two electrode fingers of the second plurality of electrode fingers 745. Similarly, each electrode finger of the second plurality of electrode fingers 745 is adjacent to two electrode fingers of the first plurality of electrode fingers 740 .

[0078] The electroacoustic resonator 700 includes a first plurality of interstitial reflectors 729A. The interstitial reflectors are substantially parallel to the first busbars 725A ( Fig. 7A ) and perpendicular to the electrode fingers filling the track 730, wherein the interstitial reflectors 729A and 729B are configured to damp signals outside the track 730, as described above. The first plurality of interstitial reflectors 729A as described above are positioned between the first bus 725A and the curve associated with the second waveform 728A. Region 701 includes a second plurality of interstitial reflectors 729B, which are also parallel to the second bus 725B and perpendicular to the electrode fingers in the track 730. As described above, the second plurality of interstitial reflectors 729B are positioned between the second bus 725B and the curve associated with the first waveform 728B.

[0079] In some aspects, the electroacoustic resonator 700 may have periodic waveforms 728A and 728B. In some implementations, the periodic curves associated with the waveforms 728A and 728B are sine or cosine curves. In other aspects, other shapes are used. In various aspects, the phase offset (e.g., the shift of the curve along the direction of the track 730) is used to provide a difference in the overlap of the aperture or electrode fingers. The illustrated region 701 of the electroacoustic resonator 700 includes a curve having a waveform period 760 that repeats across the track 730. The illustrated waveform period 760 includes 10 electrode fingers (e.g., 5 electrode fingers from the first plurality of electrode fingers 740 and 5 electrode fingers from the second plurality of electrode fingers 745). In other aspects, electroacoustic resonators according to aspects described herein may use different numbers of finger electrodes to define a curve associated with a waveform, such as 8 electrode fingers, 20 electrode fingers, 30 electrode fingers, or any other such number of electrode fingers depending on the operation of the particular device.

[0080] In some aspects, the curve of a waveform (e.g., waveform 728B) can be defined by the second end 741 of the first plurality of electrode fingers 745 without the second plurality of electrode fingers 740 (e.g., which are coupled to a nearby bus 725B) including any structure that contributes to the curve associated with the waveform. In the electroacoustic resonator 700, the electrode fingers each include two weighted sections, one at the end of the bus to which the electrode finger is coupled (e.g., where the weighted region is spaced apart from the bus cross-well region), and one at the end of the electrode finger where the electrode finger stops before touching the opposing bus. Figure 7B As shown, the second plurality of electrode fingers 745 includes a weighted section 747 proximate the first end of the second plurality of electrode fingers. The weighted section 747 may additionally define or contribute to the curve associated with the waveform 728A and / or the waveform 728B. Figure 7B In the illustrated region 701 , both the emphasized section at the second end 741 of the first plurality of electrode fingers 740 and the emphasized section 747 proximate the first end of each electrode finger in the second plurality of electrode fingers 745 contribute to the waveform 728B.

[0081] At the opposite side of the electroacoustic resonator 700, the waveform 728A is defined by similar weighted structures in the region of the first plurality of electrode fingers 740 and the second plurality of electrode fingers 745 near the first busbar 725A. The weighted sections can additionally contribute to the resonance suppression structure by contributing to maintaining the signal within the track 730 and outside the well region (in which the lateral signal and harmonics may be significant). Such weighted regions can be produced, for example, by adding additional thickness to the metallization layer used to produce the electrode fingers, such as Figure 5AIn other embodiments, additional width may be added to these regions of the electrode fingers, such as Figure 5B As exemplified above. Figure 5A and Figure 5B Other examples of such weighted regions are described (eg, mass loading via dielectric layers, trimming, etc.).

[0082] In the electroacoustic resonator 700, as illustrated in region 701, the gap reflector 729B (e.g., and the corresponding gap reflector 729A at the opposite side of the track 730) is a metallization line pass-through to the electrode fingers. In region 701, the gap reflector 729B is shown as a metallization line in the same metallization layer as the electrode fingers 740 and 745. The gap reflector 729B is a pass-through across the second plurality of electrode fingers 745 and electrically connects the electrode fingers 745 at the location where the gap reflector 729B touches the second plurality of electrode fingers 745. The gap reflector 729B does not intersect any of the first plurality of electrode fingers 740 because the first plurality of electrode fingers stops before the location of the gap reflector 729B. Similarly, the second plurality of electrode fingers do not extend to the reflector 729A. In the example of electroacoustic resonator 700, the reflector extends across at least two of the plurality of electrode fingers and may stop at an electrode finger of the second plurality of electrode fingers 745, or at an intermediate position between electrode fingers in the second plurality of electrode fingers, where the electrode finger would extend if the electrode finger in the first plurality of electrode fingers 740 passed through waveform 728B. Interstitial reflectors 729B include some reflectors that extend over the entire length of waveform 728A or waveform 728B, but also include some interstitial reflectors that are short due to waveform 728B having different distances from a nearby busbar (e.g., waveform 728B is close to busbar 725B). In portions of waveform 728B further away from nearby bus 725B, some reflectors 729B extend only a short way before they are blocked by the region where the reflectors 729B intersect the first plurality of electrode fingers 740, and such short gap reflectors 729B provide signal guiding along track 730 without interfering with operation by coupling directly to finger electrodes extending from opposite sides of track 730.

[0083] In any implementation, such interstitial reflectors may be positioned in or around well regions, such as well regions 727A and 727B. In some such implementations, the electroacoustic resonator 700 may include a first plurality of interstitial reflectors 729A perpendicular to the electrode fingers in the track 730 and parallel to the first busbar 725A, wherein the first plurality of interstitial reflectors are positioned between the first busbar 725A and a curve associated with the second waveform 728A. Similarly, the electroacoustic resonator 700 may include a second plurality of interstitial reflectors 729B perpendicular to the electrode fingers in the track 730 and parallel to the second busbar 725B, wherein the second plurality of interstitial reflectors 729B are positioned between the second busbar 725B and a curve associated with the first waveform 728B.

[0084] In some aspects, the gap reflector has a minimum length, which can be defined by the metallization layer process, by the electrode finger distance, or by other such criteria. In some aspects, the reflector is designed to extend at least one electrode finger period (e.g., the distance between adjacent electrode fingers). In some implementations, a stub or floating gap reflector can be less than such a distance, or can be a floating reflector having a length equal to the metallization line geometry of the electrode finger or a fraction of the electrode finger length (e.g., or width).

[0085] Figure 7C is a representation of an electro-acoustic resonator of aspects of an exemplary harmonic suppression gap reflector according to aspects described herein. Figure 7C This example can be similar to Fig. 7A and Figure 7B A magnified image of a portion of the electro-acoustic resonator 700. Figure 7C Included are center finger 791C (eg, an electrode finger in the first plurality of electrode fingers 740 ) and electrode fingers 790C and 792C (eg, adjacent electrode fingers in the second plurality of electrode fingers 745 ).

[0086] Reflectors 788C and 787C extend across gaps between electrode fingers 790C and 792C to couple electrode fingers 790C and 792C without touching electrode finger 791C (e.g., the reflector extends from a connection to bus 725A through track 730 from the area where fingers 790C and 792C are coupled to reflectors 788C and 787C).

[0087] FIG. 7D to FIG. 8 is a representation of an alternative interstitial reflector within an electroacoustic resonator such as electroacoustic resonator 700 according to various aspects described herein. Figure 7C The structure, Fig.7D The structure includes the same electrode fingers 790C, 791C and 792C. However, Fig.7DThe structure includes breaks 789A and 789B (e.g., gaps) in the floating reflector 788D, such that the floating reflector 788D includes an area where the floating reflector 788D is not coupled to any electrode finger. The structure includes a non-floating reflector 787D and may include additional reflectors between the reflector 787D and the busbars coupled to the fingers 790C and 792C. A gap reflector such as such a floating portion within the gap reflector 788D can reduce the magnitude of the electric field and local capacitance in the area illustrated in the lateral direction. Due to second-order nonlinear effects associated with second-order harmonics that can degrade device performance as described above, in addition to using unbroken reflectors (e.g., FIG. 7A to FIG. 7C 788D) can be used to limit harmonic signals that degrade device performance based on various manufacturing and application considerations. Such floating structures slightly change design properties, such as the electric well length (e.g., associated with wells 727A and 727B) to reduce energy in the lateral modes of the electroacoustic resonator.

[0088] Fig. 7E and Figure 8 Each illustrates a different interstitial reflector structure that can be used in different implementations of electroacoustic resonators according to various aspects described herein. Fig.7D , Fig. 7E and Figure 8 All including from Figure 7C The same electrode fingers 790C, 791C and 792C. In addition to the non-floating gap reflector 786E, Fig. 7E Also included are two stacked floating gap reflectors 788E and 787E. In other implementations, any number of such floating gap reflectors may be used at any distance from the waveform as described herein. Figure 8 Illustrated with FIG. 7C to FIG. 7E The shape, width or length of the gap reflector line varies. Figure 8 , floating reflectors 788D and 787D have geometries on extensions of electrode fingers 791C, rather than reflector lines perpendicular to the electrode fingers with etched or gap segments illustrated by breaks 789A and 789B. Reflectors 788D and 787D may be fabricated as metallization elements along lines having the same common width as electrode fingers 791C.

[0089] Fig. 9900 is a representation of a wireless communication device 900 including an electroacoustic resonator for harmonic suppression according to various aspects described herein. The wireless communication device 900 includes a transmit path 901 and a receive path 902. As described above, after power amplification of the signal, harmonics from the electroacoustic resonator may be particularly destructive to device performance near the output of the transmit path 901, where the power through the electroacoustic resonator, such as resonator 911, may be relatively high. In operation where the power through resonator 911 is high, harmonics from resonator 911 may travel to other electroacoustic resonators (such as resonator 910) in different paths and resonators 920 and resonator 921 in the receive path 902 via parasitic paths 914, 925, and 924. Interference from harmonics in such paths may interfere not only with electroacoustic signals in SAW resonators, but also with electroacoustic signals in other resonators, such as BAW resonators. Using wave patterns in electrode fingers and interstitial reflectors to suppress lateral modes in a device as described above can suppress noise from such sources within a design.

[0090] Fig.10 1000 is a diagram illustrating an improvement in device performance of wireless communication with an electroacoustic resonator including harmonic suppression according to various aspects described herein. Graph 1000 illustrates an example of a plot of frequency on the horizontal axis versus second harmonic power on the vertical axis. Line 1010 shows a curve for an electroacoustic resonator without both a waveform structure and a gap reflector. Line 1020 shows a curve for an electroacoustic resonator with both a waveform structure and a gap reflector as described above. Line 1010 shows the additional power in the second harmonic across the illustrated spectrum without both the waveform structure and the gap reflector. This additional power in the second harmonic can contribute to parasitic noise and performance degradation, as described above. In contrast, line 1020 shows a significant suppression of second harmonic power when both the gap reflector and the waveform structure described above are included in the resonator.

[0091] Fig.11 is a flow chart describing an example of the operations of a method 1100 for operation of a wireless communication device having one or more electroacoustic resonators with harmonic suppression in accordance with various aspects described herein. In some aspects, the operations described may be performed by a device including a memory and a processing circuit coupled to the memory and configured to perform the operations of the method 1100. In some aspects, the method 1100 may be embodied as instructions stored in a non-transitory computer-readable storage medium that, when executed by a processing circuit (e.g., a control circuit) of the device, causes the device to perform the operations of the method 1100 described below. The blocks in the method 1100 may or may not be performed in the order shown, and in some embodiments, may be performed at least partially in parallel.

[0092] The method 1100 includes block 1102 , which involves forming a layer of piezoelectric material.

[0093] Blocks 1104 to 1110 involve forming an electrode structure on or over the piezoelectric material. Such an electrode structure and an associated substrate that may be further formed as part of method 1100 may be similar to that described above in Figures 1A to 3B The structure described in .

[0094] The method 1100 includes block 1104 , which involves forming a first busbar and a second busbar.

[0095] Method 1100 includes box 1106, which involves forming electrode fingers arranged in an interdigitated manner, wherein forming the electrode fingers includes forming a first plurality of electrode fingers coupled to a first bus and forming a second plurality of electrode fingers coupled to a second bus, wherein the first plurality of electrode fingers includes electrode fingers of different lengths extending toward the second bus such that unconnected ends of the first plurality of electrode fingers collectively form a first waveform, and wherein the second plurality of electrode fingers includes electrode fingers of different lengths extending toward the first bus such that unconnected ends of the second plurality of electrode fingers collectively form a second waveform.

[0096] The method 1100 includes block 1108 , which involves forming a first plurality of interstitial reflectors substantially parallel to the first busbar, the first plurality of interstitial reflectors being positioned between the first busbar and a curve associated with a second waveform without overlapping the second waveform.

[0097] The method 1100 includes block 1110 , which involves forming a second plurality of interstitial reflectors substantially parallel to the second busbar, the second plurality of interstitial reflectors being positioned between the second busbar and a curve associated with the first waveform without overlapping the first waveform.

[0098] Additional operations of method 1100 or other similar aspects may involve forming any of the structures described herein, including forming dielectric or trimmed mass structures to modify electroacoustic resonance with well structures as described herein or any other such structures. Method 1100 or other similar aspects may additionally involve repeating or intervening frames for forming other elements in a complex device (e.g., as part of a system-on-chip or other device integrated with an electroacoustic resonator).

[0099] Fig.1212 is a functional block diagram of a wireless communication device configured for OAM multiplexing according to various aspects described herein. Device 1200 includes component 1202 for forming a layer of piezoelectric material. Device 1202 may include material manufacturing equipment for forming a layer or any other material stack on a substrate as described above. Device 1200 also includes component 1204 for forming an electrode structure on or above the piezoelectric material formed by component 1202. The electrode structure includes: a first busbar; a second busbar, the second busbar is parallel to the first busbar; a first plurality of electrode fingers, the first plurality of electrode fingers are coupled to the first busbar and extend in a first direction toward the second busbar without touching the second busbar, each of the first plurality of electrode fingers has a first end coupled to the first busbar and a second end, and each of the first plurality of electrode fingers extends toward the second busbar by a different distance relative to adjacent electrode fingers in the first plurality of electrode fingers, so that the second end of each of the first plurality of electrode fingers forms a first waveform together; a second plurality of electrode fingers, the second plurality of electrode fingers are coupled to the second busbar and extend in a second direction toward the first busbar without touching the first busbar, the second plurality of electrode fingers Each electrode finger in the finger-like members has a first end coupled to the second bus and a second end, and each electrode finger in the second plurality of electrode fingers extends toward the first bus at a different distance relative to adjacent electrode fingers in the second plurality of electrode fingers, so that the second end of each electrode finger in the second plurality of electrode fingers jointly forms a second waveform, wherein the first plurality of electrode fingers and the second plurality of electrode fingers are staggered; a first plurality of gap reflectors, which are substantially parallel to the first bus, and the first plurality of gap reflectors are positioned between the first bus and a curve associated with the second waveform; and a second plurality of gap reflectors, which are parallel to the second bus, and the second plurality of gap reflectors are positioned between the second bus and a curve associated with the first waveform.

[0100] The apparatus 1200 may also include components for forming any structure according to any aspect described herein, including a manufacturing system for forming or otherwise generating any substrate layer, piezoelectric layer, metal layer, dielectric layer, etc. described herein.

[0101] Additional exemplary aspects of the present disclosure include:

[0102] Aspect 1. An electroacoustic resonator, comprising: a first busbar; a second busbar, the second busbar being parallel to the first busbar; a first plurality of electrode fingers, the first plurality of electrode fingers being coupled to the first busbar and extending in a first direction toward the second busbar without touching the second busbar, each of the first plurality of electrode fingers having a first end coupled to the first busbar and a second end, and each of the first plurality of electrode fingers extending toward the second busbar by a different distance relative to adjacent electrode fingers of the first plurality of electrode fingers, so that the second end of each of the first plurality of electrode fingers jointly forms a first waveform; a second plurality of electrode fingers, the second plurality of electrode fingers being coupled to the second busbar and extending in a second direction toward the first busbar without touching the first busbar, the second plurality of Each of the electrode fingers has a first end coupled to the second bus and a second end, and each of the second plurality of electrode fingers extends toward the first bus at a different distance relative to adjacent electrode fingers of the second plurality of electrode fingers, so that the second end of each of the second plurality of electrode fingers collectively forms a second waveform, wherein the first plurality of electrode fingers and the second plurality of electrode fingers are staggered; a first plurality of gap reflectors, the first plurality of gap reflectors are substantially parallel to the first bus, the first plurality of gap reflectors are positioned between the first bus and a curve associated with the second waveform; and a second plurality of gap reflectors, the second plurality of gap reflectors are parallel to the second bus, the second plurality of gap reflectors are positioned between the second bus and a curve associated with the first waveform.

[0103] Aspect 2. An electroacoustic resonator according to Aspect 1, wherein: the first plurality of electrode fingers include a first weighted section near the first end of each electrode finger in the first plurality of electrode fingers; and the second plurality of electrode fingers include a second weighted section near the first end of each electrode finger in the second plurality of electrode fingers.

[0104] Aspect 3. An electroacoustic resonator according to Aspect 2, wherein: the first emphasis section near the first end of each electrode finger-shaped member in the first plurality of electrode finger-shaped members is positioned on the curve associated with the second waveform; and the first emphasis section near the first end of each electrode finger-shaped member in the second plurality of electrode finger-shaped members is positioned on the curve associated with the first waveform.

[0105] Aspect 4. An electroacoustic resonator according to any one of Aspects 1 to 3, wherein: each of the first plurality of electrode fingers includes a second emphasis section at the second end; and each of the second plurality of electrode fingers includes the second emphasis section at the second end.

[0106] Aspect 5. An electroacoustic resonator according to Aspect 4, wherein the first weighted segment and the second weighted segment of each electrode finger-shaped member in the first plurality of electrode fingers and the first weighted segment and the second weighted segment of each electrode finger-shaped member in the second plurality of electrode fingers each include a corresponding area having additional thickness compared to the corresponding center track portion of each corresponding electrode finger-shaped member.

[0107] Aspect 6. An electroacoustic resonator according to any one of Aspects 4 to 5, wherein the first emphasis segment and the second emphasis segment of each electrode finger of the first plurality of electrode fingers and the first emphasis segment and the second emphasis segment of each electrode finger of the second plurality of electrode fingers each include a corresponding area having an additional finger width compared to a corresponding center track portion of each corresponding electrode finger.

[0108] Aspect 7. An electroacoustic resonator according to any one of Aspects 1 to 6, wherein the curve associated with the first waveform and the curve associated with the second waveform each include at least one of a cosine curve or a sine curve; and wherein the curve associated with the first waveform is offset from the curve associated with the second waveform to provide a difference in the length of overlapping fingers.

[0109] Aspect 8. The electroacoustic resonator according to any one of Aspects 1 to 7, wherein the period of the curve associated with the first waveform and the period of the curve associated with the second waveform each include a number of electrode fingers from 10 to 50.

[0110] Aspect 9. The electroacoustic resonator according to any one of Aspects 1 to 8 further includes: a first emphasis section, which is defined by a dielectric layer or a first trimmed section near the first end of each electrode finger-shaped member in the first plurality of electrode finger-shaped members; and a second emphasis section, which is defined by the dielectric layer or the second trimmed section near the first end of each electrode finger-shaped member in the second plurality of electrode finger-shaped members.

[0111] Aspect 10. The electroacoustic resonator according to any one of aspects 1 to 9, wherein the curve associated with the first waveform and the curve associated with the second waveform are each periodic, having a common period that repeats every 20 electrode fingers.

[0112] Aspect 11. The electroacoustic resonator of any one of aspects 1 to 10, wherein the curve associated with the second waveform and the curve associated with the first waveform are the same waveform shifted out of phase to provide a variation in overlapping finger lengths.

[0113] Aspect 12. The electroacoustic resonator according to any one of aspects 1 to 11, wherein the first plurality of electrode fingers, the second plurality of electrode fingers, the first plurality of interstitial reflectors, and the second plurality of interstitial reflectors are in a metal layer having a metallization ratio between 0.5 and 0.55.

[0114] Aspect 13. An electroacoustic resonator according to any one of Aspects 1 to 12, wherein: the first plurality of gap reflectors each include a metal strip parallel to the first bus bar, spanning the first plurality of electrode fingers and coupled to at least a portion of the first plurality of electrode fingers; and the second plurality of gap reflectors each include a metal strip parallel to the second bus bar, spanning the second plurality of electrode fingers and coupled to at least a portion of the second plurality of electrode fingers.

[0115] Aspect 14. An electroacoustic resonator according to any one of Aspects 1 to 12, wherein the first plurality of gap reflectors include a metal strip parallel to the first busbar and spanning the first plurality of electrode fingers in a common metallization layer with the first plurality of electrode fingers, the metal strip having a first break and a second break at adjacent electrode fingers among the first plurality of electrode fingers to produce a floating gap reflector at an extension of a line of an electrode finger among the second plurality of electrode fingers between the adjacent electrode fingers among the first plurality of electrode fingers.

[0116] Aspect 15. An electroacoustic resonator according to any one of Aspects 1 to 12, wherein the first plurality of gap reflectors include a plurality of metal strips parallel to the first busbar and across the first plurality of electrode fingers in a common metallization layer with the first plurality of electrode fingers, one or more of the plurality of metal strips having a first break and a second break at adjacent electrode fingers among the first plurality of electrode fingers to produce one or more floating gap reflectors at a plurality of lines of an electrode finger among the second plurality of electrode fingers between the plurality of metal strips closest to the adjacent electrode fingers among the first plurality of electrode fingers.

[0117] Aspect 16. The electroacoustic resonator according to any one of Aspects 1 to 15 further includes: a first end reflector, the first end reflector being at the end of the first track, the first end reflector including reflector fingers extending from the first busbar to the second busbar in a vertical direction; a third plurality of electrode fingers, the third plurality of electrode fingers being coupled to the first busbar between the first plurality of electrode fingers or the second plurality of electrode fingers and the first end reflector, the third plurality of electrode fingers extending toward the second busbar in the vertical direction without touching the second busbar; and a fourth plurality of electrode fingers, the fourth plurality of electrode fingers being coupled to the second busbar between the first plurality of electrode fingers or the second plurality of electrode fingers and the first end reflector, the fourth plurality of electrode fingers extending toward the first busbar in the vertical direction without touching the first busbar, wherein the third plurality of electrode fingers are staggered with the fourth plurality of electrode fingers.

[0118] Aspect 17. An electroacoustic resonator according to Aspect 16, wherein: the third plurality of electrode fingers each further includes a first weighted segment, wherein each first weighted segment of the third plurality of electrode fingers is approximately equidistant from the first busbar along the corresponding electrode finger; and the fourth plurality of electrode fingers each further includes a first weighted segment, wherein each first weighted segment of the fourth plurality of electrode fingers is approximately equidistant from the second busbar along the corresponding electrode finger.

[0119] Aspect 18. An electroacoustic resonator according to any one of Aspects 16 to 17, wherein: the first plurality of gap reflectors do not extend into the area between each first emphasis section of the third plurality of electrode fingers and the first busbar; and the second plurality of gap reflectors do not extend into the area between each first emphasis section of the fourth plurality of electrode fingers and the second busbar.

[0120] Aspect 19A. The electro-acoustic resonator of any one of Aspects 1 to 18, wherein the electro-acoustic resonator is part of a transmit path of a wireless communication device.

[0121] Aspect 19B. An electroacoustic resonator according to any one of Aspects 1 to 19A, wherein the wireless communication device further includes: an antenna; an amplifier; a first antenna path, the first antenna path being coupled between the first bus and the antenna; and a first transmission path, the first transmission path being coupled from the output of the amplifier to the second bus.

[0122] Aspect 20. The electroacoustic resonator according to any one of aspects 1 to 19B, further comprising a piezoelectric layer, wherein the first plurality of electrode fingers and the second plurality of electrode fingers are formed on the piezoelectric layer.

[0123] Aspect 21. The electroacoustic resonator of any one of aspects 1 to 20, wherein the first plurality of interstitial reflectors comprises interstitial reflectors having different lengths.

[0124] Aspect 22. The electroacoustic resonator of aspect 21, wherein the different lengths of the first plurality of interstitial reflectors are defined by the curve associated with the second waveform.

[0125] Aspect 23. An electroacoustic resonator, comprising: a first busbar; a second busbar, the second busbar being parallel to the first busbar; a plurality of electrode fingers, wherein the electrode fingers coupled to the first busbar are interlaced with the electrode fingers coupled to the second busbar to form an electroacoustic interdigital transducer, and wherein adjacent electrode fingers in the plurality of electrode fingers attached to the same busbar extend different distances toward the relative busbar; a first plurality of gap reflectors, the first plurality of gap reflectors being parallel to the first busbar, the first plurality of gap reflectors being positioned between the first busbar and the electrode fingers coupled to the second busbar; and a second plurality of gap reflectors, the second plurality of gap reflectors being parallel to the second busbar, the second plurality of gap reflectors being positioned between the second busbar and the electrode fingers coupled to the first busbar.

[0126] Aspect 24. An electroacoustic resonator according to Aspect 23, wherein the electrode finger-shaped members coupled to the first busbar each include a first end and a second end and extend vertically from the first busbar toward the second busbar, wherein the first end is coupled to the first busbar, wherein the second end extends vertically from the first busbar toward the second busbar, and wherein the second ends collectively form a waveform.

[0127] Aspect 25. The electroacoustic resonator according to any one of aspects 23 to 24, wherein the waveform is a triangular waveform.

[0128] Aspect 26. A device comprising: a first busbar; a second busbar, the second busbar being parallel to the first busbar; a plurality of electrode fingers, wherein the electrode fingers coupled to the first busbar are interlaced with the electrode fingers coupled to the second busbar to form an electroacoustic interdigital transducer, and wherein the electrode fingers in the plurality of electrode fingers extend different distances toward a relative busbar so that the ends of the plurality of electrode fingers closest to the relative busbar form a waveform; a first plurality of gap reflectors, the first plurality of gap reflectors are parallel to the first busbar, the first plurality of gap reflectors are positioned in a first barrier region between the first busbar and the electrode fingers coupled to the second busbar; and a second plurality of gap reflectors, the second plurality of gap reflectors are parallel to the second busbar, the second plurality of gap reflectors are positioned in a second barrier region between the second busbar and the electrode fingers coupled to the first busbar.

[0129] Aspect 27. A method for forming an electroacoustic device, comprising: forming a layer of piezoelectric material; and forming an electrode structure on or over the piezoelectric material, forming the electrode structure comprising: forming a first busbar and a second busbar; wherein forming the electrode fingers comprises forming a first plurality of electrode fingers coupled to the first busbar and forming a second plurality of electrode fingers coupled to the second busbar, wherein the first plurality of electrode fingers comprises electrode fingers of different lengths extending toward the second busbar, so that the unconnected ends of the first plurality of electrode fingers collectively form a first waveform, wherein the second plurality of electrode fingers comprises electrode fingers of different lengths extending toward the first busbar, so that the unconnected ends of the second plurality of electrode fingers collectively form a second waveform; forming a first plurality of gap reflectors substantially parallel to the first busbar, the first plurality of gap reflectors being positioned between the first busbar and a curve associated with the second waveform without overlapping the second waveform; and forming a second plurality of gap reflectors substantially parallel to the second busbar, the second plurality of gap reflectors being positioned between the second busbar and a curve associated with the first waveform without overlapping the first waveform.

[0130] Aspect 28. A method according to Aspect 27, wherein forming the electrode structure further comprises: forming a first well by forming a first emphasis section, wherein the electrode finger-shaped member is positioned on the first waveform; and forming a second well by forming a second emphasis section, wherein the electrode finger-shaped member is positioned on the second waveform.

[0131] Aspect 29. The method according to any one of aspects 27 to 28, wherein the first weighted section and the second weighted section are formed with an additional finger width.

[0132] Aspect 30. The method according to any one of aspects 27 to 28, wherein the first weight section and the second weight section are formed from a material from a dielectric layer.

[0133] Aspect 31. A method for sending or receiving wireless signals using any of the above devices.

[0134] Aspect 32. A non-transitory computer-readable medium comprising instructions that, when executed by a wireless communication device, cause the wireless communication device to send or receive signals using any of the apparatus or methods described above.

[0135] Aspect 33. An apparatus comprising means for performing any of the operations described above.

[0136] Fig.13 1 is a functional block diagram of at least a portion of an example of a simplified wireless transceiver circuit 1300 of a wireless communication device including a filter with harmonic suppression in accordance with the various aspects described above that can be employed. The transceiver circuit 1300 is configured to receive signals / information for transmission (shown as I values ​​and Q values), which are provided to one or more baseband filters 1312. The filtered output is provided to one or more mixers 1314. The output from the one or more mixers 1314 is provided to a driver amplifier 1316, the output of which is provided to a power amplifier 1318 to produce an amplified signal for transmission. The amplified signal is output to an antenna 1322 through one or more filters 1320 (e.g., a duplexer (if used as a frequency division duplex transceiver) or other filter). The one or more filters 1320 may include any filter circuit described herein, which may include one or more resonators according to the details described above. The antenna 1322 may be used to both transmit and receive data wirelessly. The transceiver circuit 1300 includes a receive path that passes through one or more filters 1320 to be provided to a low noise amplifier (LNA) 1324 and an additional filter 1326, and then down-converted from the receive frequency to a baseband frequency through one or more mixer circuits 1328 before the signal is further processed (e.g., provided to an analog-to-digital converter and then demodulated or otherwise processed in the digital domain), and then down-converted from the receive frequency to a baseband frequency through one or more mixer circuits 1328. There may be separate filters for the receive circuit (e.g., the receive circuit may have a separate antenna or have separate receive filters) that may be implemented using any of the filter circuits described herein.

[0137] Fig.14 is a diagram of an environment 1400 including an electronic device 1402 including a wireless transceiver 1496 such as Fig.131400. In environment 1400, electronic device 1402 communicates with base station 1404 via wireless link 1406. As shown, electronic device 1402 is depicted as a smart phone. However, electronic device 1402 can be implemented as any suitable computing device or other electronic device, such as a cellular base station, a broadband router, an access point, a cellular or mobile phone, a gaming device, a navigation device, a media device, a laptop computer, a desktop computer, a tablet computer, a server computer, a network attached storage (NAS) device, a smart appliance, a vehicle-based communication system, an Internet of Things (IoT) device, a sensor or security device, an asset tracker, etc.

[0138] Base station 1404 communicates with electronic device 1402 via wireless link 1406, which can be implemented as any suitable type of wireless link. Although depicted as a base station tower of a cellular radio network, base station 1404 may represent or be implemented as another device, such as a satellite, a terrestrial broadcast tower, an access point, a peer device, a mesh network node, a fiber optic line, another electronic device generally as described above, etc. Thus, electronic device 1402 may communicate with base station 1404 or another device via a wired connection, a wireless connection, or a combination thereof. Wireless link 1406 may include a downlink of data or control information communicated from base station 1404 to electronic device 1402 and an uplink of other data or control information communicated from electronic device 1402 to base station 1404. Wireless link 1406 may use any suitable communication protocol or standard (such as Third Generation Partnership Project Long Term Evolution (3GPP LTE, 3GPP NR 5G), IEEE 802.11, IEEE 802.16, Bluetooth TM etc.) to achieve this.

[0139] The electronic device 1402 includes a processor 1480 and a memory 1482. The memory 1482 may be part of or form part of a computer-readable storage medium. The processor 1480 may include any type of processor configured to execute processor-executable instructions (e.g., code) stored by the memory 1482, such as an application processor or a multi-core processor. The memory 1482 may include any suitable type of data storage medium, such as a volatile memory (e.g., random access memory (RAM)), a non-volatile memory (e.g., flash memory), an optical medium, a magnetic medium (e.g., a disk or tape), etc. In the context of the present disclosure, the memory 1482 is implemented to store instructions 1484, data 1486, and other information of the electronic device 1402, and therefore when configured as a computer-readable storage medium or a portion thereof, the memory 1482 does not include a transient propagation signal or a carrier wave.

[0140] The electronic device 1402 may also include an input / output port 1490. The I / O port 1490 enables data exchange or interaction with other devices, networks, or users or between elements of the device.

[0141] The electronic device 1402 may also include a signal processor (SP) 1492 , such as, for example, a digital signal processor (DSP). The signal processor 1492 may function similarly to a processor and may be capable of executing instructions and / or processing information in conjunction with the memory 1482 .

[0142] For communication purposes, the electronic device 1402 also includes a modem 1494, a wireless transceiver 1496, and an antenna (not shown). The wireless transceiver 1496 uses radio frequency (RF) wireless signals to provide connectivity to corresponding networks and other electronic devices connected to these corresponding networks, and may include Fig.13 The wireless transceiver 1496 may facilitate communications over any suitable type of wireless network, such as a wireless local area network (LAN) (WLAN), a peer-to-peer (P2P) network, a mesh network, a cellular network, a wireless wide area network (WWAN), a navigation network (e.g., the Global Positioning System (GPS) or another Global Navigation Satellite System (GNSS) for North America), and / or a wireless personal area network (WPAN).

[0143] The various operations of the above methods may be performed by any suitable means capable of performing the corresponding functions. The means may include various hardware and / or software components and / or modules, including but not limited to circuits, application specific integrated circuits (ASICs), or processors. As part of such operations, the above methods may also include blocks for performing any additional functions described for operating the apparatus with harmonic suppression according to the example operations described herein.

[0144] By way of example, the elements described herein, or any part of the elements, or any combination of the elements, may be implemented as a "processing system" including one or more processors. Examples of processors include microprocessors, microcontrollers, graphics processing units (GPUs), central processing units (CPUs), application processors, digital signal processors (DSPs), reduced instruction set computing (RISC) processors, systems on chip (SoCs), baseband processors, field programmable gate arrays (FPGAs), programmable logic devices (PLDs), state machines, gated logic components, discrete hardware circuits, and other suitable hardware configured to perform various functionalities described throughout the present disclosure. One or more processors in a processing system may execute software. Whether referred to as software, firmware, middleware, microcode, hardware description language, or other names, software should be broadly interpreted as meaning instructions, instruction sets, codes, code segments, program codes, programs, subroutines, software components, applications, software applications, software packages, routines, subroutines, objects, executable files, threads of execution, processes, functions, etc.

[0145] Therefore, in one or more example embodiments, function or circuit block can be implemented by hardware, software or any combination thereof. If implemented in software, function can be stored or encoded on a computer-readable medium as one or more instructions or codes. Computer-readable medium includes computer storage medium. Storage medium can be any available medium that can be accessed by a computer. By way of example and not limitation, such computer-readable medium can include a random access memory (RAM), a read-only memory (ROM), an electrically erasable programmable ROM (EEPROM), an optical disk storage device, a magnetic disk storage device, other magnetic storage devices, a combination of computer-readable media of the above type, or any other medium that can be used to store computer executable code in the form of an instruction or data structure that can be accessed by a computer. In some respects, the components described in circuits can be implemented by hardware, software or any combination thereof.

[0146] Generally, where there are operations illustrated in figures, those operations may have corresponding means-plus-function components with similar numbering.

[0147] As used herein, the term "determine" encompasses a wide variety of actions. For example, "determine" may include calculating, computing, processing, deriving, investigating, searching (e.g., searching in a table, a database, or another data structure), ascertaining, etc. In addition, "determine" may include receiving (e.g., receiving information), accessing (e.g., accessing data in a memory), etc. In addition, "determine" may include resolving, selecting, choosing, establishing, etc.

[0148] As used herein, the phrase referring to "at least one of" a list of items refers to any combination of those items (which includes a single member). By way of example, "at least one of a, b, or c" is intended to cover: a, b, c, a - b, a - c, b - c, and a - b - c, as well as any combination with multiple identical elements (e.g., a - a, a - a - a, a - a - b, a - a - c, a - b - b, a - c - c, b - b, b - b - b, b - b - c, c - c, and c - c - c, or any other ordering of a, b, and c).

[0149] The methods disclosed herein include one or more steps or acts for implementing the described methods. The steps and / or acts of the method may be interchanged with one another without departing from the scope of the claims. In other words, unless a specific order of the steps or acts is specified, the order and / or use of specific steps and / or acts may be modified without departing from the scope of the claims.

[0150] It should be understood that the claims are not limited to the exact configurations and components illustrated above. Various modifications, alterations, and variations of the arrangements, operations, and details of the methods and apparatuses described above may be made without departing from the scope of the claims.

Claims

1. An electroacoustic resonator, include: First busbar; a second busbar, the second busbar being parallel to the first busbar; a first plurality of electrode fingers, the first plurality of electrode fingers being coupled to the first bus bar and extending in a first direction toward the second bus bar without touching the second bus bar, each of the first plurality of electrode fingers having a first end coupled to the first bus bar and a second end, and each of the first plurality of electrode fingers extending toward the second bus bar by a different distance relative to adjacent electrode fingers of the first plurality of electrode fingers, so that the second end of each of the first plurality of electrode fingers collectively forms a first waveform; a second plurality of electrode fingers coupled to the second bus bar and extending in a second direction toward the first bus bar without touching the first bus bar, each electrode finger in the second plurality of electrode fingers having a first end coupled to the second bus bar and a second end, and each electrode finger in the second plurality of electrode fingers extending toward the first bus bar a different distance relative to adjacent electrode fingers in the second plurality of electrode fingers so that the second end of each electrode finger in the second plurality of electrode fingers collectively forms a second waveform, wherein the first plurality of electrode fingers and the second plurality of electrode fingers are staggered; a first plurality of interstitial reflectors, the first plurality of interstitial reflectors being substantially parallel to the first busbar, the first plurality of interstitial reflectors being positioned between the first busbar and a curve associated with the second waveform; as well as A second plurality of interstitial reflectors are provided, the second plurality of interstitial reflectors being substantially parallel to the second busbar, the second plurality of interstitial reflectors being positioned between the second busbar and a curve associated with the first waveform.

2. The electroacoustic resonator according to claim 1, in: the first plurality of electrode fingers comprising a first weighted section proximate the first end of each electrode finger of the first plurality of electrode fingers; and The second plurality of electrode fingers includes a first weighted section proximate the first end of each electrode finger of the second plurality of electrode fingers.

3. The electroacoustic resonator according to claim 2, in: the first emphasised section proximate the first end of each electrode finger of the first plurality of electrode fingers is positioned on the curve associated with the second waveform; and The first emphasised section proximate the first end of each electrode finger of the second plurality of electrode fingers is positioned on the curve associated with the first waveform.

4. The electroacoustic resonator according to claim 3, in: each electrode finger of the first plurality of electrode fingers comprises a second weighted section at the second end; and Each electrode finger of the second plurality of electrode fingers includes a second weighted section at the second end.

5. An electroacoustic resonator according to claim 4, wherein the first weighted segment and the second weighted segment of each electrode finger-shaped member in the first plurality of electrode fingers and the first weighted segment and the second weighted segment of each electrode finger-shaped member in the second plurality of electrode fingers each include a corresponding area having additional thickness compared to the corresponding center track portion of each corresponding electrode finger-shaped member.

6. An electroacoustic resonator according to claim 4, wherein the first emphasis segment and the second emphasis segment of each electrode finger of the first plurality of electrode fingers and the first emphasis segment and the second emphasis segment of each electrode finger of the second plurality of electrode fingers each include a corresponding area having an additional finger width compared to the corresponding center track portion of each corresponding electrode finger.

7. The electroacoustic resonator of claim 1, wherein the curve associated with the first waveform and the curve associated with the second waveform each comprise at least one of a cosine curve or a sine curve; and Wherein the curve associated with the first waveform is offset from the curve associated with the second waveform to provide a difference in overlapping finger lengths. 8 . The electroacoustic resonator of claim 7 , wherein a period of the curve associated with the first waveform and a period of the curve associated with the second waveform each include a number of electrode fingers from 10 to 50. 9 .

9. The electroacoustic resonator according to claim 1, further comprising: include: a first weighted section defined by a dielectric layer or a first trimmed section proximate the first end of each electrode finger of the first plurality of electrode fingers; as well as A second weighted section is defined by the dielectric layer or a second trimmed section proximate the first end of each electrode finger of the second plurality of electrode fingers.

10. The electroacoustic resonator of claim 1, wherein the curve associated with the first waveform and the curve associated with the second waveform are each periodic, having a common period that repeats every 20 electrode fingers.

11. The electroacoustic resonator of claim 1, wherein the curve associated with the second waveform and the curve associated with the first waveform are the same waveform shifted out of phase to provide a variation in overlapping finger lengths.

12. The electroacoustic resonator of claim 1, wherein the first plurality of electrode fingers, the second plurality of electrode fingers, the first plurality of interstitial reflectors, and the second plurality of interstitial reflectors are in a metal layer having a metallization ratio between 0.5 and 0.

55.

13. The electroacoustic resonator according to claim 1, in: The first plurality of interstitial reflectors each include a metal strip parallel to the first busbar and spanning across and coupled to at least a portion of the first plurality of electrode fingers; and The second plurality of interstitial reflectors each include a metal strip parallel to the second busbar and spanning across and coupled to at least a portion of the second plurality of electrode fingers.

14. The electroacoustic resonator according to claim 1, wherein the first plurality of gap reflectors include a metal strip parallel to the first busbar and across the first plurality of electrode fingers in a common metallization layer with the first plurality of electrode fingers, the metal strip having a first break and a second break at adjacent electrode fingers among the first plurality of electrode fingers to produce a floating gap reflector at an extension of a line of an electrode finger among the second plurality of electrode fingers between the adjacent electrode fingers among the first plurality of electrode fingers.

15. The electroacoustic resonator according to claim 1, wherein the first plurality of gap reflectors include a plurality of metal strips parallel to the first busbar and across the first plurality of electrode fingers in a common metallization layer with the first plurality of electrode fingers, one or more of the plurality of metal strips having a first break and a second break at adjacent electrode fingers among the first plurality of electrode fingers to generate one or more floating gap reflectors at a plurality of lines of an electrode finger among the second plurality of electrode fingers between the plurality of metal strips closest to the adjacent electrode fingers among the first plurality of electrode fingers.

16. The electroacoustic resonator according to claim 1, further comprising: include: a first end reflector at a first rail end, the first end reflector comprising a reflector finger extending in a vertical direction from the first busbar to the second busbar; a third plurality of electrode fingers coupled to the first bus bar between the first plurality of electrode fingers or the second plurality of electrode fingers and the first end reflector, the third plurality of electrode fingers extending in the vertical direction toward the second bus bar without touching the second bus bar; as well as A fourth plurality of electrode fingers, wherein the fourth plurality of electrode fingers are coupled to the second busbar between the first plurality of electrode fingers or the second plurality of electrode fingers and the first end reflector, the fourth plurality of electrode fingers extending toward the first busbar in the vertical direction without touching the first busbar, wherein the third plurality of electrode fingers are staggered with the fourth plurality of electrode fingers.

17. The electroacoustic resonator according to claim 16, in: The third plurality of electrode fingers each further comprises a first weighted section, wherein each first weighted section of the third plurality of electrode fingers is approximately equidistant from the first busbar along the corresponding electrode finger; and The fourth plurality of electrode fingers each further include a first weighted section, wherein each first weighted section of the fourth plurality of electrode fingers is approximately equidistant from the second busbar along the corresponding electrode finger.

18. The electroacoustic resonator according to claim 17, in: the first plurality of interstitial reflectors not extending into a region between each first weighted section of the third plurality of electrode fingers and the first busbar; and The second plurality of interstitial reflectors do not extend into a region between each first emphasis section of the fourth plurality of electrode fingers and the second bus bar.

19. The electroacoustic resonator of claim 1, wherein the electroacoustic resonator is part of a transmit path of a wireless communication device ； and The wireless communication device further comprises: antenna; Amplifier; a first antenna path coupled between the first busbar and the antenna; and A first transmission path is coupled from an output of the amplifier to the second bus.

20. The electroacoustic resonator of claim 1, further comprising a piezoelectric layer, wherein the first plurality of electrode fingers and the second plurality of electrode fingers are formed on the piezoelectric layer.

21. The electroacoustic resonator of claim 1, wherein the first plurality of interstitial reflectors comprises interstitial reflectors having different lengths.

22. The electroacoustic resonator of claim 21, wherein the different lengths of the first plurality of interstitial reflectors are defined by the curve associated with the second waveform.

23. An electroacoustic resonator, include: First busbar; a second busbar, the second busbar being parallel to the first busbar; a plurality of electrode fingers, wherein electrode fingers coupled to the first busbar are interleaved with electrode fingers coupled to the second busbar to form an electroacoustic interdigital transducer, and wherein adjacent electrode fingers of the plurality of electrode fingers attached to the same busbar extend different distances toward an opposing busbar; a first plurality of interstitial reflectors, the first plurality of interstitial reflectors being parallel to the first busbar, the first plurality of interstitial reflectors being positioned between the first busbar and the electrode fingers coupled to the second busbar; as well as A second plurality of interstitial reflectors are provided, the second plurality of interstitial reflectors being parallel to the second bus bar, the second plurality of interstitial reflectors being positioned between the second bus bar and the electrode fingers coupled to the first bus bar.

24. The electroacoustic resonator of claim 23, wherein the electrode finger-shaped members coupled to the first busbar each include a first end and a second end and extend vertically from the first busbar toward the second busbar, wherein the first end is coupled to the first busbar, wherein the second end extends vertically from the first busbar toward the second busbar, and wherein the second ends collectively form a waveform.

25. The electroacoustic resonator of claim 24, wherein the waveform is a triangular waveform.

26. A device, include: Piezoelectric materials; as well as An electrode structure, the electrode structure being positioned on the piezoelectric material, the electrode structure comprising: First busbar; a second busbar, the second busbar being parallel to the first busbar; a plurality of electrode fingers, wherein electrode fingers coupled to the first bus are interleaved with electrode fingers coupled to the second bus to form an electroacoustic interdigital transducer, and wherein electrode fingers in the plurality of electrode fingers extend different distances toward an opposing bus such that ends of the plurality of electrode fingers closest to the opposing bus form a waveform; a first plurality of interstitial reflectors, the first plurality of interstitial reflectors being parallel to the first bus bar, the first plurality of interstitial reflectors being positioned in a first barrier region between the first bus bar and the electrode fingers coupled to the second bus bar; and A second plurality of interstitial reflectors are provided, the second plurality of interstitial reflectors being parallel to the second bus bar, the second plurality of interstitial reflectors being positioned in a second barrier region between the second bus bar and the electrode fingers coupled to the first bus bar.

27. A method for forming an electroacoustic device, include: forming a piezoelectric material layer; as well as An electrode structure is formed on or above the piezoelectric material, wherein forming the electrode structure comprises: forming a first busbar and a second busbar; forming electrode fingers arranged in an interdigitated manner, wherein forming the electrode fingers comprises forming a first plurality of electrode fingers coupled to the first bus bar and forming a second plurality of electrode fingers coupled to the second bus bar, wherein the first plurality of electrode fingers comprises electrode fingers of different lengths extending toward the second bus bar such that unconnected ends of the first plurality of electrode fingers collectively form a first waveform, wherein the second plurality of electrode fingers comprises electrode fingers of different lengths extending toward the first bus bar such that unconnected ends of the second plurality of electrode fingers collectively form a second waveform; forming a first plurality of interstitial reflectors substantially parallel to the first busbar, the first plurality of interstitial reflectors being positioned between the first busbar and a curve associated with the second waveform without overlapping the second waveform; and A second plurality of interstitial reflectors are formed substantially parallel to the second busbar, the second plurality of interstitial reflectors being positioned between the second busbar and a curve associated with the first waveform without overlapping the first waveform.

28. The method according to claim 27, wherein forming the electrode structure further comprises: include: forming a first well by forming a first emphasis section, wherein the electrode fingers are positioned on the first waveform; as well as A second well is formed by forming a second emphasis section, wherein the electrode fingers are positioned on the second waveform.

29. The method of claim 28, wherein the first weighted section and the second weighted section are formed with an additional finger width.

30. The method of claim 28, wherein the first weighted section and the second weighted section are formed from a material from a dielectric layer.

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