Pollutant treatment device

Abstract

A contaminant treatment apparatus for purifying and measuring particles or chemical gases generated in a semiconductor production line is provided. The pollutant treatment device comprises: a main body unit comprising a first surface and a second surface which are different; a driving unit installed in the main body unit and configured to travel within the semiconductor production line; a position sensor mounted in the main body unit and configured to sense a position within the semiconductor production line; and a purification unit installed in the main body unit and configured to penetrate the first surface and the second surface, in which the purification unit includes: a flow path disposed between the first surface and the second surface; a chemical gas detection sensor installed in the flow path to measure the chemical gas entering through the first surface; and a controller receiving the concentration of the chemical gas from the chemical gas detection sensor, receiving the position data from the position sensor, and checking the concentration of the chemical gas according to the position in the semiconductor production line.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims priority to Korean Patent Application No. 10-2023-0166240 filed in the Korean Intellectual Property Office on November 27, 2023, and all benefits under 35 USC 119, the contents of which are incorporated herein by reference in their entirety. Technical Field

[0003] The present disclosure relates to a pollutant treatment device. Background Art

[0004] Generally, a semiconductor or display device can be manufactured by repeatedly performing a series of manufacturing processes on a substrate such as a silicon wafer or a glass substrate. For example, manufacturing processes such as deposition, photoetching, oxidation, ion implantation, and cleaning can be selectively and / or repeatedly performed to form a circuit pattern on the substrate.

[0005] This manufacturing process can be performed in a clean room. When performing the manufacturing process, particles or harmful chemical gases may be generated in the clean room. Since particles or harmful chemical gases have a significant impact on the manufacturing process, it is necessary to deal with these pollutants to control contamination. Summary of the invention

[0006] An aspect and feature of an embodiment of the present disclosure is to provide a contamination treatment apparatus that purifies and measures particles or chemical gases generated in a semiconductor production line.

[0007] Another aspect and feature of an embodiment of the present disclosure is to provide a contamination treatment method that purifies and measures particles or chemical gases generated in a semiconductor production line.

[0008] According to some aspects of the present disclosure, a pollutant treatment device is provided, which includes: a main body unit, which includes different first and second surfaces; a driving unit, which is installed in the main body unit and configured to travel in a semiconductor production line; a position sensor, which is installed in the main body unit and configured to sense the position in the semiconductor production line; a purification unit, which is installed in the main body unit and configured to penetrate the first surface and the second surface, wherein the purification unit includes: a flow path, which is arranged between the first surface and the second surface; a chemical gas detection sensor, which is installed in the flow path to measure the chemical gas entering through the first surface; and a controller, which receives the concentration of the chemical gas from the chemical gas detection sensor, receives the position data from the position sensor, and checks the concentration of the chemical gas according to the position in the semiconductor production line.

[0009] According to some aspects of the present disclosure, a pollutant treatment device is provided, the pollutant treatment device comprising: a purification unit, the purification unit comprising: a suction fan, the suction fan is installed in a first zone and sucks particles and chemical gases; a collection unit, the collection unit is installed in a second zone and filters particles and chemical gases; a particle sensor and a chemical gas detection sensor, the particle sensor and the chemical gas detection sensor are installed in a third zone located between the first zone and the second zone, wherein the particle sensor measures the particles and the chemical gas detection sensor measures the chemical gas; a flow path, the flow path is arranged in the third zone; a main unit, the main unit is connected to the purification unit and includes a first surface and a second surface; a driving unit, the driving unit is installed in the main unit and is configured to travel within a semiconductor production line; a position sensor, the position sensor is installed in the main unit and senses a position within the semiconductor production line; and a controller, the controller receives a concentration of particles from the particle sensor, receives a concentration of chemical gases from the chemical gas detection sensor, and checks the concentrations of particles and chemical gases according to the position within the semiconductor production line.

[0010] According to some aspects of the present disclosure, a pollutant treatment device is provided, which includes: a main body unit, the main body unit including different first and second surfaces; a driving unit, the driving unit is installed in the main body unit and configured to travel in a semiconductor production line; a position sensor, the position sensor is installed in the main body unit and configured to sense the position in the semiconductor production line; a purification unit, the purification unit is installed in the main body unit and configured to penetrate the first surface and the second surface, wherein the purification unit includes: a suction fan, the suction fan is installed in a first zone and sucks in particles and chemical gases; a collecting unit, the collecting unit is installed in a second zone and filters particles and chemical gases; a flow path, the flow path is installed in a third zone between the first zone and the second zone; a particle sensor and a chemical gas detection sensor, the particle sensor is used to measure particles, and the chemical gas detection sensor is used to measure chemical gases, wherein the particle sensor and the chemical gas detection sensor are installed in the flow path; an image processing unit, the image processing unit receiving data from the position sensor, the particle sensor and the chemical gas detection sensor to form a map of the semiconductor production line; and a controller, the controller receiving the concentration of particles from the particle sensor, the concentration of chemical gas from the chemical gas detection sensor, and the position of particles and the position of chemical gas from the position sensor, wherein the flow path includes a side portion, a center portion, and another side portion, and wherein the width of the flow path gradually decreases from the one side portion toward the center portion and gradually increases from the center portion toward the other side portion, wherein the semiconductor production line includes a first area and a second area, wherein the particle sensor and the chemical gas detection sensor measure the concentration of particles and the concentration of chemical gas present in the first area and the second area, wherein the position sensor senses the positions of particles and chemical gas, and wherein the image processing unit forms a first map showing the positions of particles and chemical gas present in the first area and the second area.

[0011] The technical problems of the present disclosure are not limited to the above-mentioned technical problems, and other unmentioned technical problems will be clearly understood by those skilled in the art through the following description. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] Figures 1 to 5 is a diagram illustrating a pollutant treatment device according to some embodiments of the present disclosure.

[0013] Figure 6 and Figure 7 is a diagram illustrating a pollutant treatment operation of a pollutant treatment device according to some embodiments of the present disclosure.

[0014] Figure 8 and Fig. 9 is a diagram illustrating a pollutant treatment device according to some embodiments of the present disclosure.

[0015] Fig.10 is a diagram illustrating a pollutant treatment device according to some embodiments of the present disclosure.

[0016] Fig.11 is a diagram illustrating a pollutant treatment device according to some embodiments of the present disclosure.

[0017] Fig.12 is a diagram illustrating a pollutant treatment method according to some embodiments of the present disclosure. DETAILED DESCRIPTION

[0018] In this specification, although the terms "first", "second", etc. are used to describe various elements or components, these elements or components are not limited by these terms. These terms are only used to distinguish one element or component from another element and component. Therefore, the first element or component mentioned below may also be the second element or component within the technical concept of the present disclosure.

[0019] Hereinafter, embodiments of the present disclosure will be described in detail with reference to the accompanying drawings. The same components in the drawings are denoted by the same reference numerals, and redundant descriptions thereof will be omitted.

[0020] Figures 1 to 5 is a diagram illustrating a pollutant treatment device according to some embodiments of the present disclosure.

[0021] refer to Figures 1 to 5 The pollutant treatment device may include a main body unit 110 , a purification unit 120 , a driving unit 130 , a position sensor 115 , an image processing unit 1500 , and a controller 1000 .

[0022] The main body unit 110 may include a first surface 111 and a second surface 112 opposite to the first surface 111. The main body unit 110 may include a plurality of surfaces. The main body unit 110 may have an empty space inside thereof. Figure 1 , the main body unit 110 is shown as a cube or a rectangular parallelepiped, but is not limited thereto.

[0023] The main body unit 110 may be directly or indirectly connected to the purification unit 120, the driving unit 130, the position sensor 115, the controller 1000, and the image processing unit 1500, which will be described later. The main body unit 110 may be a main body of the pollutant treatment device.

[0024] The purification unit 120 may be coupled to the body unit 110. The purification unit 120 may be installed in an inner space of the body unit 110. The first surface 111 and the second surface 112 of the body unit 110 may be penetrated by the purification unit 120.

[0025] The purification unit 120 may include a first area A1, a second area A2, and a third area A3. The purification unit 120 may be formed to extend in a horizontal direction. The first area A1, the second area A2, and the third area A3 of the purification unit 120 may be arranged in one direction. The third area A3 may be between the first area A1 and the second area A2.

[0026] The first area A1 may be disposed closer to the first surface 111 of the body unit 110 than the second area A2. The second area A2 may be disposed closer to the second surface 112 of the body unit 110 than the first area A1.

[0027] The purification unit 120 may include a flow path 125 , a suction fan 121 , a collection unit 122 , a chemical gas detection sensor 124 , and a particle sensor 123 .

[0028] The flow path 125 may be provided between the first surface 111 and the second surface 112 of the body unit 110. The flow path 125 may be installed in the third area A3 of the purification unit 120. The flow path 125 may have an elongated cylindrical shape.

[0029] The flow path 125 may include a side portion 126, a center portion 128, and another side portion 127. The side portion 126 may be a boundary between the first area A1 and the third area A3. The center portion 128 may be between the side portion 126 and the other side portion 127. The other side portion 127 may be a boundary between the second area A2 and the third area A3.

[0030] The first area A1 may be disposed between one side portion 126 of the flow path 125 and the first surface 111 of the body unit 110. The first area A1 may have a width greater than a maximum width of the flow path 125.

[0031] The second area A2 may be disposed between the other side portion 127 of the flow path 125 and the second surface 112 of the body unit 110. The second area A2 may have a width greater than a maximum width of the flow path 125.

[0032] The width W1 of the flow path 125 may gradually decrease from one side portion 126 toward the center portion 128. The width W1 of the flow path 125 may gradually increase from the center portion 128 toward the other side portion 127.

[0033] The width W1 of the flow path 125 may not be constant in a direction from one side portion 126 toward the other side portion 127. The width of the center portion 128 may be smaller than that of one side portion 126. The width of the center portion 128 may be smaller than that of the other side portion 127.

[0034] The chemical gas detection sensor 124 may be installed in the flow path 125 so as to be installed in the third area A3 of the purification unit 120. The chemical gas detection sensor 124 may be installed in the center portion 128 of the flow path 125, but is not limited thereto. The chemical gas detection sensor 124 may be installed in an area having the smallest width in the flow path 125.

[0035] The chemical gas 50 sucked by the suction fan 121 described later may be measured by the chemical gas detection sensor 124. The chemical gas detection sensor 124 may measure the concentration of the chemical gas 50.

[0036] The particle sensor 123 may be installed in the flow path 125 so as to be installed in the third area A3 of the purification unit 120. The particle sensor 123 may be installed in the center portion 128 of the flow path 125, but is not limited thereto. The particle sensor 123 may be installed in an area having the smallest width in the flow path 125.

[0037] The particle sensor 123 may measure the particles 60 sucked by the suction fan 121. The particle sensor 123 may measure the concentration of the particles 60.

[0038] The suction fan 121 may be installed in the first area A1 of the purification unit 120 . The suction fan 121 may be installed at an end of the first area A1 , but is not limited thereto. The suction fan 121 may be formed on one side portion 126 of the flow path 125 .

[0039] The suction fan 121 may be installed on the first surface 111 of the main body unit 110. A central portion of the first surface 111 of the main body unit 110 may be opened so that the suction fan 121 may be exposed.

[0040] The suction fan 121 may be disposed on the same plane as the first surface 111 of the main body unit 110 , but is not limited thereto. The suction fan 121 may protrude from the first surface 111 of the main body unit 110 .

[0041] The suction fan 121 may include a single fan or a plurality of fans.

[0042] The suction fan 121 may include a motor. The suction fan 121 may suck air using the motor. The suction fan 121 may suck particles 60 or chemical gases 50. When the suction fan 121 sucks air, the air may contain particles 60 or chemical gases 50. The suction fan 121 may move air from the first area A1 to the third area A3 and the second area A2.

[0043] When the suction fan 121 sucks the air containing the particles 60 and the chemical gas 50 , the particles 60 and the chemical gas 50 may move from the first area A1 to the third area A3 .

[0044] The chemical gas 50 may be measured by the chemical gas detection sensor 124 installed in the third area A3. The particles 60 may be measured by the particle sensor 123 installed in the third area A3.

[0045] The collecting unit 122 may be installed in the second area A2 of the purification unit 120 . The collecting unit 122 may be installed at the end of the second area A2 , but is not limited thereto. The collecting unit 122 may be installed on the other side portion 127 of the flow path 125 .

[0046] The collecting unit 122 may be mounted on the second surface 112 of the main body unit 110. The center portion of the second surface 112 of the main body unit 110 is open so that the collecting unit 122 may be exposed. The collecting unit 122 may be disposed on the same plane as the second surface 112 of the main body unit 110, but is not limited thereto. The collecting unit 122 may protrude from the second surface 112 of the main body unit 110.

[0047] The chemical gas 50 may be sucked by the suction fan 121 and moved to the first area A1, the third area A3, and the second area A2, and filtered by the collecting unit 122. That is, the chemical gas 50 may be captured by the collecting unit 122.

[0048] The particles 60 may be sucked by the suction fan 121 and moved to the first area A1, the third area A3, and the second area A2, and filtered by the collecting unit 122. That is, the particles 60 may be captured by the collecting unit 122.

[0049] The collecting unit 122 may be a fan filter unit FFU.

[0050] The driving unit 130 may be installed in the main body unit 110. For example, the driving unit 130 may be installed on a lower portion of the main body unit 110.

[0051] The driving unit 130 may include wheels and a driving motor, etc. The wheels may be mounted on a lower portion of the main body unit 110. The driving unit 130 may be moved by rotating the wheels by the driving motor. The driving unit 130 may travel within a semiconductor production line.

[0052] The position sensor 115 may be installed in the main unit 110. Figure 1 , Figure 2 and Figure 4 , the position sensor 115 is shown to be installed on the upper surface of the main unit 110, but is not limited thereto.

[0053] The position sensor 115 may sense the position of the contamination treatment device. For example, the position sensor 115 may sense the position of the contamination treatment device disposed in a semiconductor production line.

[0054] The position of the chemical gas 50 or the position of the particle 60 may be detected by the position sensor 115. When the chemical gas detection sensor 124 and the particle sensor 123 measure the chemical gas 50 and the particle 60, the position sensor 115 may sense the position of the chemical gas 50 and the position of the particle 60.

[0055] The exhaust device 150 may be installed in a semiconductor production line. The exhaust device 150 may include a pipe and a suction unit.

[0056] The pollutant treatment device may be connected to the exhaust device 150. The pollutant treatment device may be moved to the exhaust device 150 so that the chemical gas 50 and the particles 60 filtered by the capture unit 122 may be removed through the exhaust device 150.

[0057] The chemical gas 50 and the particles 60 filtered by the collection unit 122 may be sucked by the suction unit and discharged to the outside through the pipe.

[0058] The controller 1000 may control at least one of the particle sensor 123 , the chemical gas detection sensor 124 , the position sensor 115 , and the image processing unit 1500 .

[0059] The controller 1000 may be provided with the concentration of the particles 60 from the particle sensor 123. The controller 1000 may be provided with the concentration of the chemical gas 50 from the chemical gas detection sensor 124.

[0060] Controller 1000 may be provided with position data from position sensor 115. Controller 1000 may be provided with the position of the pollutant treatment device from position sensor 115.

[0061] The controller 1000 may check the concentration of the chemical gas 50 and the concentration of the particles 60 based on the location in the semiconductor production line.

[0062] The controller 1000 may transmit information about the concentration of the particles 60 , information about the concentration of the chemical gas 50 , and position data of the particles 60 and the chemical gas 50 to the image processing unit 1500 .

[0063] Figure 6 and Figure 7 is a diagram illustrating a pollutant treatment operation of a pollutant treatment device according to some embodiments of the present disclosure.

[0064] Figure 6 1 shows that the chemical gas detection sensor 124 measures the chemical gas 50, the position sensor 115 measures the position of the chemical gas 50, and the image processing unit 1500 forms a first image showing the chemical gas 50 ( Fig. 9 3500) process.

[0065] refer to Figures 1 to 5 and Figure 6 , chemical gases present in a semiconductor production line are measured by a chemical gas detection sensor ( S10 ).

[0066] When the suction fan 121 sucks the chemical gas 50 , the chemical gas 50 may be measured by the chemical gas detection sensor 124 installed in the flow path 125 of the purification unit 120 .

[0067] Then, the chemical gas detection sensor transmits the concentration data of the chemical gas 50 to the controller ( S20 ).

[0068] The controller 1000 receives the concentration data of the chemical gas 50 from the chemical gas detection sensor 124 and may determine whether the concentration of the chemical gas 50 is high or low. For example, the controller 1000 may determine whether the concentration of the chemical gas 50 is higher or lower than a threshold value set by a user.

[0069] Next, if the chemical gas concentration is higher than the reference value, the controller transmits an execution notification to the position sensor ( S30 ).

[0070] Then, the position sensor generates position data of the chemical gas ( S40 ).

[0071] The position of the chemical gas 50 measured by the chemical gas detection sensor 124 may be sensed by the position sensor 115. In this way, the position of the pollutant treatment device may be sensed.

[0072] Next, the position sensor transmits the chemical gas position data to the controller ( S50 ).

[0073] Then, the controller transmits the chemical gas concentration data and the chemical gas position data to the image processing unit ( S60 ).

[0074] Next, the image processing unit forms a first map based on the chemical gas concentration data and the chemical gas position data provided from the controller ( S70 ).

[0075] First picture ( Fig. 9 The first graph 3500 may be a graph showing the concentration and position of the chemical gas 50. Figure 8 and Fig. 9 The description of the first diagram 3500 is described in more detail.

[0076] Figure 7 1 shows that the chemical gas 50 and the particle 60 are measured by the chemical gas detection sensor 124 and the particle sensor 123, the position of the chemical gas 50 and the position of the particle 60 are measured by the position sensor 115, and the first image ( Fig. 9 3500) process.

[0077] refer to Figures 1 to 5 and Figure 7 , the chemical gas in the semiconductor production line is measured by the chemical gas detection sensor S10, and the particles in the semiconductor production line are measured by the particle sensor (S11).

[0078] The chemical gas 50 and the particles 60 may be measured by the chemical gas detection sensor 124 and the particle sensor 123 installed in the flow path 125 of the purification unit 120 .

[0079] Then, the chemical gas detection sensor and the particle sensor transmit data of the chemical gas concentration and the particle concentration to the controller ( S21 ).

[0080] The controller 1000 receives the concentration of the chemical gas 50 and the concentration of the particles 60 from the chemical gas detection sensor 124 and the particle sensor 123, and can determine whether the concentration is high or low. For example, it can be determined whether the concentration of the chemical gas 50 is higher or lower than a reference value set by the user. In addition, it can be determined whether the concentration of the particles 60 is higher or lower than a threshold value set by the user.

[0081] If the chemical gas concentration and the particle concentration are higher than the reference value, the controller transmits an execution notification to the position sensor ( S31 ).

[0082] Then, the position sensor generates data of the chemical gas position and the particle position ( S41 ).

[0083] The position of the chemical gas 50 measured by the chemical gas detection sensor 124 and the position of the particle 60 measured by the particle sensor 123 may be sensed by the position sensor 115. In this way, the position of the pollutant treatment device may be sensed.

[0084] Next, the position sensor transmits data of the chemical gas and particle positions to the controller ( S51 ).

[0085] Then, the controller transmits the chemical gas concentration and position data and the particle concentration and position data to the image processing unit ( S61 ).

[0086] Then, the image processing unit forms a first map based on the chemical gas concentration and position data and the particle concentration and position information provided from the controller ( S70 ).

[0087] Figure 8 and Fig. 9 is a diagram illustrating a pollutant treatment device according to some embodiments of the present disclosure.

[0088] refer to Figure 8 In some embodiments, a contamination treatment device may travel along a semiconductor production line 3000 . Figure 8 It may be a diagram of a semiconductor production line 3000 .

[0089] The semiconductor production line 3000 may include a first area A1, a second area A2, a third area A3, and a fourth area A4. Although not shown, semiconductor facilities may be installed in each of the areas A1, A2, A3, and A4.

[0090] A plurality of pollutant treatment devices 1, 2, 3, and 4 may roam along the semiconductor production line 3000. In some embodiments, the first pollutant treatment device 1 may purify the first area A1 by inhaling and filtering the chemical gas 50 and particles 60 present in the first area A1. The second pollutant treatment device 2 may purify the second area A2 by inhaling and filtering the chemical gas 50 and particles 60 present in the second area A2. The third pollutant treatment device 3 and the fourth pollutant treatment device 4 may purify the third area A3 and the fourth area A4 by inhaling and filtering the chemical gas 50 and particles 60 present in the third area A3 and the fourth area A4.

[0091] In some embodiments, the first pollutant treatment device 1 can check the concentration of the chemical gas 50 and the concentration of the particle sensor 123 by using the chemical gas detection sensor 124 and the particle sensor 123 when patrolling in the first area A1. The second pollutant treatment device 2 can check the concentration of the chemical gas 50 and the concentration of the particle sensor 123 by using the chemical gas detection sensor 124 and the particle sensor 123 when patrolling in the second area A2. The third pollutant treatment device 3 and the fourth pollutant treatment device 4 can check the concentration of the chemical gas 50 and the concentration of the particle 60 when patrolling in the third area A3 and the fourth area A4, respectively.

[0092] The first pollutant treatment device 1, the second pollutant treatment device 2, the third pollutant treatment device 3, and the fourth pollutant treatment device 4 may communicate with each other.

[0093] The controller 1000 may receive the concentration of the chemical gas 50 and the chemical gas 50 position data of each area A1 , A2 , A3 , and A4 from each of the pollutant treatment devices 1 , 2 , 3 , and 4 .

[0094] The controller 1000 may be provided with the concentration of the particles 60 in each area A1 , A2 , A3 , and A4 and the position data of the particles 60 from each of the pollutant treatment devices 1 , 2 , 3 , and 4 .

[0095] refer to Fig. 9 , the image processing unit 1500 may receive the concentration of the chemical gas 50 in each of the areas A1, A2, A3, and A4 and the position data of the chemical gas 50 from the controller 1000. The image processing unit 1500 may receive the concentration of the particles 60 in each of the areas A1, A2, A3, and A4 and the position data of the particles 60 from the controller 1000.

[0096] The image processing unit 1500 may form a first map 3500 showing the positions of the chemical gas 50 and the particles 60 existing in each of the areas A1 , A2 , A3 , and A4 .

[0097] The first map 3500 may identify chemical gas 50 leakage areas and locations of particles 60 present in the semiconductor production line 3000. The amount of particles 60 present in each of the areas A1, A2, A3, and A4 may be determined by the first map 3500. The first map 3500 may determine whether the chemical gas 50 is leaking from each of the areas A1, A2, A3, and A4.

[0098] The first map 3500 may determine whether more pollutant measurement devices should be deployed. The first map 3500 may allow a person to access and handle particles 60 and chemical gases 50 .

[0099] In some embodiments, each of the pollutant treatment devices 1, 2, 3, and 4 may be moved to each of the regions A1, A2, A3, and A4 of the semiconductor production line 3000. For example, the first pollutant treatment device 1 may filter the chemical gas 50 and the particles 60 from the first region A1 to purify the first region A1. The first pollutant treatment device 1 may measure the chemical gas 50 and the particles 60. Thereafter, the first pollutant treatment device 1 may be moved to the second region A2 to purify and measure the chemical gas 50 and the particles 60.

[0100] Semiconductor components are manufactured through various processes in a clean room equipped with a production line. During the semiconductor manufacturing process in the clean room, particles or harmful chemical gases may be discharged. Therefore, the semiconductor production line may require a purification process. Conventional particle sensors and chemical gas detection sensors are designed to be used in pipes or wall mounts, and therefore cannot be measured and purified in a standby state. Therefore, when particles or chemical gases are generated, the particles or chemical gases must be handled and purified by humans.

[0101] However, the pollutant treatment device according to some embodiments of the present disclosure may include a main body unit 110, a purification unit 120, a driving unit 130, a position sensor 115, an image processing unit 1500, and a controller 1000. The pollutant treatment device may move around the semiconductor production line 3000. The pollutant treatment device may continuously measure and purify the particles 60 or the chemical gas 50 using the purification unit 120.

[0102] Specifically, the particles 60 and the chemical gas 50 may be sucked by the suction fan 121. The sucked particles 60 and the chemical gas 50 may be filtered by the collection unit 122. In this way, the pollutant treatment device may continuously measure and purify the particles 60 and the chemical gas 50 while moving around the semiconductor production line 3000. The positions of the particles 60 and the chemical gas 50 may be sensed by the position sensor 115. The controller 1000 may be provided with the concentration of the particles 60 and the concentration of the chemical gas 50 from the particle sensor 123 and the chemical gas detection sensor 124. The controller 1000 may be provided with the position data of the particles 60 and the chemical gas 50 from the position sensor 115. The image processing unit 1500 may form a first map 3500 showing the concentration and position of the particles 60 and the concentration and position of the chemical gas 50. The distribution of the particles 60 and the concentration of the particles 60 may be identified by the first map 3500. The first map 3500 may identify the distribution of the chemical gas 50 and whether the chemical gas 50 is leaking. Referring to the first diagram 3500 , a contamination treatment device may be additionally installed in the semiconductor production line 3000 , or a person may go and manually treat the particles 60 or the chemical gas 50 .

[0103] As described above, the contamination treatment device can purify the semiconductor production line 3000 by continuously moving around the semiconductor production line 3000 and filtering the particles 60 or the chemical gas 50. Additionally, the first map 3500 can be formed to determine the location and concentration of the particles 60 and the chemical gas 50 by the areas A1, A2, A3, and A4 of the semiconductor production line 3000.

[0104] Fig.10 is a diagram showing a pollutant treatment device according to some embodiments of the present disclosure. Figures 1 to 5 Duplicate portion of what is described in .

[0105] refer to Fig.10 , the purification unit 120 may include a flow path 125, a suction fan 121, a collection unit 122, a chemical gas detection sensor 124, and a particle sensor 123. The purification unit 120 may include a first area A1, a second area A2, and a third area A3.

[0106] The flow path 125 may be installed in the third area A3. The flow path 125 may include a side portion 126, a center portion 128, and another side portion 127. The width W1 of the flow path 125 may be constant. For example, the width W1 of the flow path 125 may be constant from the side portion 126 toward the center portion 128 and from the center portion 128 toward the other side portion 127.

[0107] The particle sensor 123 may be installed on an upper portion of the flow path 125. The chemical gas detection sensor 124 may be installed at a lower end of the flow path 125. The particle sensor 123 and the chemical gas detection sensor 124 may be installed at the center portion 128, but are not limited thereto.

[0108] Fig.11 is a diagram showing a pollutant treatment device according to some embodiments of the present disclosure. Figures 1 to 5 The parts described in the above table overlap.

[0109] refer to Fig.11 , the purification unit 120 may include a first area A1, a second area A2, and a third area A3. The width may become narrower as the purification unit 120 moves from the first area A1, the third area A3, and the second area A2. For example, the width W_A1 of the first area A1 may be greater than the width W_A3 of the third area A3. The width W_A3 of the third area A3 may be greater than the width W_A2 of the second area A2.

[0110] Fig.12 is a diagram illustrating a pollutant treatment method according to some embodiments of the present disclosure.

[0111] A pollutant treatment device can be provided, the pollutant treatment device comprising a main unit 110, the main unit 110 comprising different first surfaces 111 and second surfaces 112; a driving unit 130, the driving unit 130 is installed in the main unit 110 and is configured to travel in a semiconductor production line; a position sensor 115, the position sensor 115 is installed in the main unit 110 and is configured to sense a position in the semiconductor production line; a purification unit 120, the purification unit 120 is installed to penetrate the first surface 111 and the second surface 122, the purification unit 120 has a first surface 111 and a second surface 122, and the purification unit 120 has a first surface 111 and a second surface 122. A flow path 125 between the second surface 122, a chemical gas detection sensor 124 and a particle sensor 124 installed in the flow path 125, a suction fan 121 installed in the first area A1 and sucking the chemical gas 50 and the particles 60, a purification unit 120 installed in the second area A2 and including a collection unit 122 for filtering the chemical gas 50 and the particles 60; a controller 1000, the controller 1000 receiving the chemical gas concentration and the particle concentration from the chemical gas detection sensor 124 and the particle sensor 123; and an image processing unit 1500, the image processing unit 1500 forming a map of the semiconductor production line. (See Figures 1 to 5 )

[0112] refer to Fig.12 , the suction fan sucks the particles and the chemical gas, and the collection unit filters the particles and the chemical gas ( S100 ).

[0113] The contaminant treatment device can be moved around the semiconductor production line within the semiconductor production line. The particles 60 and chemical gases 50 can be sucked in by the suction fan 121. The sucked particles 60 and chemical gases 50 can be captured by the collection unit 122. In this way, the contaminant treatment device can purify the interior of the semiconductor production line.

[0114] Next, the chemical gas detection sensor and the particle sensor measure chemical gas and particles existing in the first area and the second area of ​​the semiconductor production line, respectively ( S200 ).

[0115] The chemical gas detection sensor 124 and the particle sensor 123 may respectively measure the concentration of the chemical gas 50 and the concentration of the particles 60. When the suction fan 121 sucks the chemical gas 50 and the particles 60, the chemical gas detection sensor 124 and the particle sensor 123 may measure the concentration of the chemical gas 50 and the concentration of the particles 60. The concentration of the chemical gas 50 and the concentration of the particles 60 may be transmitted to the controller 1000.

[0116] Next, the position sensor senses positions of particles and chemical gases existing in the first region and the second region ( S300 ).

[0117] When the chemical gas detection sensor 124 and the particle 60 measure the chemical gas 50 and the particle 60, respectively, the position sensor 115 can sense the position of the particle 60 and the chemical gas 50 existing in the first area A1 and the second area A2 in the semiconductor production line. The position of the chemical gas 50 and the position of the particle 60 can be transmitted to the controller 1000.

[0118] Subsequently, the image processing unit 1500 forms a first map showing positions of particles and chemical gases existing in the first region and the second region ( S400 ).

[0119] The image processing unit 1500 may receive concentration and position data of the chemical gas 50 from the controller 1000. The image processing unit 1500 may receive concentration and position data of the particles 60 from the controller 1000. Based on the above data, the image processing unit 1500 may form a first map 3500 indicating the position of the chemical gas 50 and the position of the particles 60.

[0120] Although the embodiments of the present disclosure have been described above with reference to the accompanying drawings, the present disclosure may not be limited to these embodiments and may be implemented in various different forms. A person of ordinary skill in the art to which the present disclosure belongs will be able to understand that the present disclosure may be implemented in other specific forms without changing the technical ideas or basic features of the present disclosure. Therefore, it should be understood that the above embodiments are not restrictive in all aspects, but illustrative.

Claims

1. A pollutant treatment device, comprising: A main body unit, the main body unit comprising a first surface and a second surface that are different; a drive unit installed in the main unit and configured to travel within a semiconductor production line; a position sensor installed in the main unit and configured to sense a position within the semiconductor production line; a purification unit installed in the main unit and configured to penetrate the first surface and the second surface, wherein the purification unit comprises: a flow path disposed between the first surface and the second surface, a chemical gas detection sensor installed in the flow path to measure chemical gas entering through the first surface; and A controller receives the concentration of the chemical gas from the chemical gas detection sensor, receives position data from the position sensor, and checks the concentration of the chemical gas according to a position within the semiconductor production line.

2. The pollutant treatment device according to claim 1, further comprising: A first zone and a second zone, wherein the first zone is arranged between one side of the flow path and the first surface, and the first zone has a width greater than the maximum width of the flow path, and the second zone is arranged between the other side of the flow path and the second surface, and the second zone has a width greater than the maximum width of the flow path.

3. The pollutant treatment device according to claim 2, further comprising: a suction fan installed in the first zone and sucking the chemical gas, a collecting unit installed in the second zone and filtering the chemical gas, Wherein, the chemical gas detection sensor is arranged between the suction fan and the collection unit.

4. The pollutant treatment device according to claim 1, wherein: The flow path includes a side portion, a center portion, and another side portion, The width of the central portion is smaller than the width of the one side portion and the width of the other side portion.

5. The pollutant treatment device according to claim 4, wherein: The width of the flow path gradually decreases from the one side portion toward the center portion, and gradually increases from the center portion toward the other side portion.

6. The pollutant treatment device according to claim 5, wherein: The chemical gas detection sensor is installed in a central portion of the flow path.

7. The pollutant treatment device according to claim 5, wherein: The width of the flow path is not constant based on the direction from the one side to the other side, Wherein, the chemical gas detection sensor is installed in a region having a minimum width in the flow path.

8. The pollutant treatment device according to claim 1, further comprising: a collecting unit installed on the other side of the flow path and filtering the chemical gas, Wherein, the discharge device is installed in the semiconductor production line, The pollutant treatment device moves to the discharge device and removes the chemical gas collected in the collection unit through the discharge device.

9. The pollutant treatment device according to claim 1, wherein: The semiconductor production line includes different first and second areas. Wherein, when the first pollutant treatment device is inspected in the first area, the concentration of the chemical gas is checked using the chemical gas detection sensor. Wherein, the second pollutant treatment device communicates with the first pollutant treatment device when patrolling in the second area.

10. The pollutant treatment device according to claim 9, wherein: The controller receives data of the concentration of the chemical gas and the location of the chemical gas in the first area from the first pollutant treatment device, and The controller receives data of the concentration of the chemical gas and the position of the chemical gas in the second area from the second pollutant treatment device.

11. The pollutant treatment device according to claim 10, further comprising: An image processing unit receives data on the concentration of the chemical gas and the position of the chemical gas from the controller to form a first map showing the position of the chemical gas existing in the first area and the second area.

12. A pollutant treatment device, comprising: A purification unit, the purification unit comprising: a suction fan installed in the first zone and sucking particles and chemical gases, a collecting unit installed in the second zone and filtering the particles and the chemical gas, a particle sensor and a chemical gas detection sensor, the particle sensor and the chemical gas detection sensor being installed in a third zone between the first zone and the second zone, wherein the particle sensor measures the particles and the chemical gas detection sensor measures the chemical gas, a flow path, the flow path being arranged in the third zone, a main body unit connected to the purification unit and comprising a first surface and a second surface; a drive unit installed in the main unit and configured to travel within a semiconductor production line; a position sensor installed in the main unit and sensing a position within the semiconductor production line; and A controller receives the concentration of the particles from the particle sensor, receives the concentration of the chemical gas from the chemical gas detection sensor, and checks the concentrations of the particles and the chemical gas according to the position in the semiconductor production line.

13. The pollutant treatment device according to claim 12, wherein: The flow path includes a side portion, a center portion, and another side portion, The width of the central portion is smaller than the width of the one side portion and the width of the other side portion, Wherein, the particle sensor and the chemical gas detection sensor are installed in the central portion of the flow path.

14. The pollutant treatment device according to claim 13, wherein: The width of the flow path gradually decreases from the one side portion toward the center portion, and gradually increases from the center portion toward the other side portion.

15. The pollutant treatment device according to claim 12, in, The first region is disposed between the first surface and a side portion of the flow path, wherein the second region is disposed between the second surface and another side portion of the flow path, Wherein, the widths of the first region and the second region are greater than the maximum width of the flow path.

16. The pollutant treatment device according to claim 12, in, The discharge device is installed in the semiconductor production line. The pollutant treatment device moves to the discharge device to remove the particles and the chemical gas collected in the collection unit through the discharge device.

17. The pollutant treatment device according to claim 12, wherein: The semiconductor production line includes different first and second areas. The first pollutant treatment device, when inspecting in the first area, uses the particle sensor and the chemical gas detection sensor to check the concentration of the particles and the chemical gas. The second pollutant treatment device checks the concentration of the particles and the chemical gas in the second area and communicates with the first pollutant treatment device.

18. The pollutant treatment device according to claim 17, further comprising: An image processing unit that forms a first map showing positions of the particles and the chemical gas that exist in the first region and the second region.

19. A pollutant treatment device, comprising: A main body unit, the main body unit comprising a first surface and a second surface that are different; a drive unit installed in the main unit and configured to travel within a semiconductor production line; a position sensor installed in the main unit and configured to sense a position within the semiconductor production line; a purification unit installed in the main unit and configured to penetrate the first surface and the second surface, wherein the purification unit comprises: a suction fan installed in the first zone and sucking particles and chemical gases, a collecting unit installed in the second zone and filtering the particles and the chemical gas, a flow path installed in a third zone between the first zone and the second zone, a particle sensor and a chemical gas detection sensor, the particle sensor is used to measure the particles, the chemical gas detection sensor is used to measure the chemical gas, wherein the particle sensor and the chemical gas detection sensor are installed in the flow path, an image processing unit that receives data from the position sensor, the particle sensor, and the chemical gas detection sensor to form a map of the semiconductor production line; and a controller that receives the concentration of the particles from the particle sensor, receives the concentration of the chemical gas from the chemical gas detection sensor, and receives the position of the particles and the position of the chemical gas from the position sensor, wherein the flow path comprises a side portion, a center portion, and another side portion, and wherein a width of the flow path gradually decreases from the side portion toward the center portion, and gradually increases from the center portion toward the other side portion, The semiconductor production line includes a first area and a second area. wherein the particle sensor and the chemical gas detection sensor measure the concentration of the particles and the concentration of the chemical gas present in the first area and the second area, wherein the position sensor senses the positions of the particles and the chemical gas, The image processing unit forms a first map showing positions of the particles and chemical gas present in the first area and the second area.

20. The pollutant treatment device according to claim 19, in, The discharge device is installed in the semiconductor production line. The pollutant treatment device moves to the discharge device to discharge the particles and the chemical gas collected in the collection unit to the outside.

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