Light source chip, manufacturing method thereof and sensor

Abstract

A light source chip comprises a first light source part and a second light source part. The light source chip comprises a substrate and a supporting layer, and the supporting layer is arranged on the substrate; the first light source part comprises a substrate, a supporting layer and a first light source layer; the first light source layer is arranged on the supporting layer and is far away from the substrate relative to the supporting layer along the thickness direction of the light source chip; the second light source part comprises a substrate, a supporting layer and a second light source layer; the second light source layer is arranged on the supporting layer and is far away from the substrate relative to the supporting layer along the thickness direction of the light source chip; the invention further provides a manufacturing method of the light source chip and a sensor. In the invention, the first light source part and the second light source part are integrated on one light source chip, so that the occupied volume of the light source chip is reduced.

Description

Technical Field

[0001] The present invention belongs to the technical field of sensors, and particularly relates to a light source chip, a manufacturing method thereof, and a sensor. Background Art

[0002] At present, infrared sensing technology has been widely used in the fields of pollution monitoring and detection, temperature monitoring, space surveillance, high-resolution imaging, medicine, etc. Moreover, due to the good selectivity and extremely low false alarm of infrared gas sensing technology, the infrared sensing method has been widely used in gas analysis. As the core component of an infrared gas sensor, the performance of the infrared light source seriously affects the detection accuracy and sensitivity of the gas sensor. At present, the development of an infrared light source with the characteristics of small size, low power consumption, and high emissivity and a simple preparation process has become a research hotspot of semiconductor infrared gas sensors.

[0003] In the related art, in order to improve the detection accuracy of the sensor, two independent light source chips are set in the sensor as a dual light source, one for detecting substances and the other for eliminating the influence of environmental factors. However, setting two light source chips in the sensor will cause the problem of a large occupied volume. Summary of the Invention

[0004] The purpose of the present application is to provide a light source chip, including a first light source part and a second light source part; the light source chip includes a substrate and a support layer, and the support layer is arranged on the substrate; the first light source part includes the substrate, the support layer and a first light source layer; the first light source layer is arranged on the support layer, and along the thickness direction of the light source chip, the first light source layer is away from the substrate relative to the support layer;

[0005] The second light source part includes the substrate, the support layer and a second light source layer; the second light source layer is arranged on the support layer, and along the thickness direction of the light source chip, the second light source layer is away from the substrate relative to the support layer.

[0006] In the present application, the light source chip includes a first light source part and a second light source part. The first light source part includes a first light source layer, and the second light source part includes a second light source layer. Integrating the first light source part and the second light source part to form a dual light source on one light source chip can reduce the volume of the light source.

[0007] The present application also provides a manufacturing method of a light source chip, and the manufacturing method includes the following steps:

[0008] Provide a substrate, and deposit a support layer on at least part of the surface of the substrate;

[0009] Deposit a first light source layer on at least part of the surface of the support layer, and deposit a second light source layer on at least part of the surface of the support layer.

[0010] In the manufacturing method of the light source chip of the present application, the light source chip includes a first light source part and a second light source part. The first light source part includes a first light source layer, and the second light source part includes a second light source layer. Integrating the first light source part and the second light source part to form a dual light source on one light source chip can reduce the volume of the light source chip.

[0011] The present application also provides a sensor. The sensor includes a light source chip, which includes a first light source part and a second light source part; the light source chip includes a substrate and a support layer, and the support layer is disposed on the substrate; the first light source part includes the substrate, the support layer and a first light source layer; the first light source layer is disposed on the support layer, and along the thickness direction of the light source chip, the first light source layer is farther from the substrate than the support layer.

[0012] The second light source part includes the substrate, the support layer and a second light source layer; the second light source layer is disposed on the support layer, and along the thickness direction of the light source chip, the second light source layer is farther from the substrate than the support layer.

[0013] In the sensor of the present application, the light source chip includes a first light source part and a second light source part. The first light source part includes a first light source layer, and the second light source part includes a second light source layer. Integrating the first light source part and the second light source part to form a dual light source on one light source chip can reduce the volume of the light source. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] Figure 1 is a cross-sectional view of the light source chip;

[0015] Figure 2 is a cross-sectional view of the first light source part;

[0016] Figure 3 is Figure 2 an enlarged view of the circle A in

[0017] Figure 4 a schematic diagram of the first light source layer in one embodiment;

[0018] Figure 5 is a cross-sectional view of the second light source part;

[0019] Figure 6 is Figure 5 an enlarged view of the circle B in

[0020] Figure 7 a schematic diagram of the second light source layer in one embodiment;

[0021] Figure 8 is a schematic diagram of the sensor in the present application. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0022] To better understand the technical solution of the present application, the embodiments of the present application will be described in detail below with reference to the accompanying drawings.

[0023] It should be clear that the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. All other embodiments obtained by those of ordinary skill in the art based on the embodiments in the present application without creative efforts belong to the scope of protection of the present application.

[0024] Figure 1 is a cross-sectional view of a light source chip, refer to Figure 1 As shown, the light source chip includes a first light source part 1 and a second light source part 2. The light source chip includes a substrate 11 and a support layer 12, and the support layer 12 is connected to the substrate 11. In the present application, the first light source part 1 and the second light source part 2 are integrated as a dual light source on a light source chip, which can reduce the volume of the light source chip.

[0025] In some embodiments, the first light source part 1 includes a substrate 11, a support layer 12, and a first light source layer 13. The first light source layer 13 is connected to the support layer 12. Along the thickness direction Z of the light source chip, the support layer 12 is closer to the substrate 11 than the first light source layer 13.

[0026] In some embodiments, the second light source part 2 includes a substrate 11, a support layer 12, and a second light source layer 20. The second light source layer 20 is connected to the support layer 12. Along the thickness direction Z of the light source chip, the support layer 12 is closer to the substrate 11 than the second light source layer 20.

[0027] In some other embodiments, the first light source layer 13 can emit a first light wave, and the second light source layer 20 can emit a second light wave whose wavelength is greater than or less than the wavelength of the first light wave; further, the wavelength range of the first light wave is smaller than the wavelength range of the second light wave.

[0028] It should be noted that in some embodiments, both the first light wave and the second light wave mentioned in the present application are infrared light. Specifically, the wavelength range of the infrared light emitted by the first light source layer 13 is smaller than the wavelength range of the infrared light emitted by the second light source layer 20. For example, the wavelength range of the infrared light emitted by the first light source layer 13 is small, and the first light wave emitted by the first light source layer 13 cannot be absorbed by the substance to be detected. Therefore, the first light source layer 13 can be used as a reference light source to exclude the influence of external environmental factors; the wavelength range of the infrared light emitted by the second light source layer 20 is wide and can be absorbed by the substance to be detected. It can be used as a measurement light source, and the concentration of the substance to be detected can be detected according to the change magnitude of the output signals of the first light source part 1 and the second light source part 2, improving the detection accuracy of the light source chip.

[0029] Refer to Figure 2As shown, in some embodiments, the first light source unit 1 includes a first conductive layer 131, a first protective layer 132, and a first protection layer 14. The first conductive layer 131 is electrically connected to the first light source layer 13. The first protection layer 14 covers at least a part of the surface of the first conductive layer 131. At least a part of the first conductive layer 131 is connected to the first protective layer 132. The first protective layer 132 and the first protection layer 14 are an integral part.

[0030] Reference Figure 3 As shown, in some embodiments, the first protection layer 14 includes a first insulating layer 141, a second insulating layer 142, and a third insulating layer 143. The first insulating layer 141, the second insulating layer 142, and the third insulating layer 143 all cover at least a part of the surface of the first conductive layer 131, which can reduce the contact between the first conductive layer 131 and the outside world and prevent the oxidation of the first conductive layer 131. The first insulating layer 141 and the third insulating layer 143 are both inclined with respect to the second insulating layer 142. Defining the thickness direction Z perpendicular to the light source chip as the horizontal direction X, along the horizontal direction X, the first insulating layer 141 and the third insulating layer 143 are located on both sides of the first conductive layer 131. The first insulating layer 141, the second insulating layer 142, and the third insulating layer 143 are an integral part.

[0031] Reference Figure 4 As shown, in some embodiments, the first light source layer 13 includes a first heating layer 133 and a second protective layer 134. The first heating layer 133 is connected to the support layer 12. The second protective layer 134 is connected to the first heating layer 133. The first heating layer 133 is electrically connected to the first conductive layer 131. The first conductive layer 131 transfers heat to the first heating layer 133, thereby heating the first heating layer 133, which can radiate the first infrared light wave. The second protective layer 134 protects the first heating layer 133 from external pollution or oxidation. Along the thickness direction Z of the light source chip, the second protective layer 134 is farther from the support layer 12 than the first heating layer 133. Further, the first heating layer 133 is selected from at least one of tungsten, platinum, and nickel-chromium alloy, specifically tungsten. The second protective layer 134 is selected from silicon dioxide or silicon nitride.

[0032] Reference Figure 1 And Figure 2 As shown, in some embodiments, the light source chip has a first cavity 15. The first cavity 15 is located in the substrate 11. Along the thickness direction Z of the light source chip, the first cavity 15 and the first light source layer 13 are located on both sides of the support layer 12. The first cavity 15 is communicated with the outside of the light source chip. The first cavity 15 has a good heat preservation effect on the first heating layer 133.

[0033] Reference Figure 5 And Figure 6As shown, in some embodiments, the second light source unit 2 includes a second conductive layer 21, a second protective layer 22, and a third protective layer 23. The second conductive layer 21 is connected to the support layer 12, and the second conductive layer 21 is electrically connected to the second light source layer 20. At least part of the second conductive layer 21 and at least part of the second protective layer 22 are both connected to the support layer 12. At least part of the third protective layer 23 covers the surface of the second conductive layer 21, reducing the problem of oxidation caused by the contact between the second conductive layer 21 and the outside, and having a good protective effect on the second conductive layer 21. The second protective layer 22 and the third protective layer 23 are an integral part.

[0034] Reference Figure 7 As shown, in some embodiments, the second light source layer 20 includes a second heating layer 201, an isolation layer 202, and a radiation layer 203. The second heating layer 201 is connected to the support layer 12, the isolation layer 202 is connected to the second heating layer 201, and the radiation layer 203 is connected to the isolation layer 202. Along the thickness direction Z of the light source chip, the radiation layer 203 is farther from the second heating layer 201 than the isolation layer 202, and the second heating layer 201 is farther from the substrate 11 than the support layer 12. The second conductive layer 21 is electrically connected to the second heating layer 201. After the second conductive layer 21 is energized, heat is transmitted to the second heating layer 201. The thermal radiation of the second heating layer 201 is absorbed by the radiation layer 203 and radiates infrared light with a relatively wide wavelength range. The isolation layer 202 is disposed between the second heating layer 201 and the radiation layer 203 to reduce the possibility of short circuit caused by the contact between the second heating layer 201 and the radiation layer 203.

[0035] Furthermore, in some embodiments, the second conductive layer 21 and the second heating layer 201 are selected from at least one of tungsten, platinum, and nickel-chromium alloy; the isolation layer 202 is selected from silicon dioxide or silicon nitride; the radiation layer 203 is selected from amorphous carbon material or black silicon material, which can radiate infrared light with a wavelength range of 2 to 14 μm, so as to be used as a measurement light source and have a high absorption rate for the substance to be detected.

[0036] In the related art, the dual light sources of infrared light sources generally use two independent light source chips. One light source chip is used to eliminate the influence of environmental factors, and the other light source chip is used for detection. However, setting two light source chips in the sensor will cause the problem of large occupied volume. On the other hand, the infrared light radiated by the light source chip has a relatively single wavelength, and the absorption rate for the detection substance is low, which will have a certain impact on the detection accuracy. Moreover, in some related technologies, the infrared light source is only an independent single light source. When detecting the external gas, since the external gas is affected by environmental factors, the environmental factors will affect the infrared absorption rate of the light source chip for the gas, and then affect the detection accuracy of the light source chip.

[0037] In this application, the first light source unit 1 and the second light source unit 2 are integrated on a light source chip, and a dual-light source form is adopted to form a dual-channel, reducing the volume of the light source chip. The first light source unit 1 includes a first light source layer 13, and the first light source layer 13 is made of at least one of tungsten, platinum, and nickel-chromium alloy as a reference light source to exclude the influence of environmental factors. The second light source layer 20 is selected from an intangible carbon material or a black silicon material, which can radiate a wide range of infrared light wavelengths and has a high absorption rate for the substance to be detected. The concentration of the substance to be detected is detected according to the change magnitude of the output signals of the first light source unit 1 and the second light source unit 2, improving the detection accuracy of the light source chip.

[0038] Reference Figure 1 With Figure 5 As shown, in some embodiments, the second light source unit 2 has a second cavity 24. The second cavity 24 is located in the substrate 11. Along the thickness direction Z of the light source chip, the second cavity 24 and the second light source layer 20 are located on both sides of the support layer 12. Further, the second cavity 24 and the second heating layer 201 are located on both sides of the support layer 12, providing a heat insulation effect for the second heating layer 201, and then transferring the generated heat to the radiation layer 203 with higher efficiency.

[0039] Further, in some embodiments, both the first cavity 15 and the second cavity 24 are located in the substrate. Define the horizontal direction X perpendicular to the thickness direction Z of the light source chip. Along the horizontal direction, there is a spacing between the first cavity 15 and the second cavity 24. Among them, the volumes of the first cavity 15 and the second cavity 24 are the same, providing the same heat insulation effect. In addition, both the first cavity 15 and the second cavity 24 communicate with the outside.

[0040] This application also provides a manufacturing method of a light source chip, including the following steps:

[0041] Provide a substrate 11, and deposit a support layer 12 on at least part of the surface of the substrate 11;

[0042] Deposit a first light source layer 13 on at least part of the surface of the support layer 12, and deposit a second light source layer 20 on at least part of the surface of the support layer 12. Among them, the first light source layer 13 can radiate a first light wave, and the second light source layer 20 can radiate a second light wave whose wavelength is greater than or less than the wavelength of the first light wave. Forming the first light source unit 1 and the second light source unit 2 into a dual-light source integrated on a light source chip can reduce the volume of the light source chip.

[0043] In some embodiments, the manufacturing method of the light source chip further includes the following steps:

[0044] Provide a substrate 11, and deposit a support layer 12 on at least part of the surface of the substrate 11;

[0045] Deposit a first functional layer on at least part of the surface of the support layer 12, and etch out a first conductive layer 131 and a first heating layer 133 respectively. The first conductive layer 131 is electrically connected to the first heating layer 133, and the first light source layer 13 includes the first heating layer 133.

[0046] Deposit a second functional layer on at least part of the surface of the support layer 12, and etch out a second conductive layer 21 and a second heating layer 201 respectively. The second conductive layer 21 is electrically connected to the second heating layer 201; the second light source layer 20 includes the second heating layer 201. In some embodiments, the second conductive layer 21 and the second heating layer 201 are selected from at least one of tungsten, platinum, and nickel-chromium alloy, and specifically selected from tungsten.

[0047] In order to reduce the contact between the first conductive layer 131 and the first heating layer 133 and the outside world, in some embodiments, deposit a first protective layer 132 on at least part of the surface of the support layer 12, deposit a first protective layer 14 on at least part of the surface of the first conductive layer 131, and deposit a second protective layer 134 on at least part of the surface of the first heating layer 133. The first protective layer 132 and the first protective layer 14 are an integral part. The second protective layer 134 covers at least part of the surface of the first heating layer 133, achieving the effects of waterproofing, dustproofing, and reducing oxidation for the first heating layer 133. In some embodiments, the first isolation layer includes an insulating material. In some embodiments, the first light source layer 13 includes the first heating layer 133 and the second protective layer 134. The first heating layer 133 is selected from at least one of tungsten, platinum, and nickel-chromium alloy; the second protective layer 134 is selected from silicon dioxide or silicon nitride.

[0048] In some embodiments, use a dry etching process to penetrate the first light source layer 13 and the support layer 12, and etch out a first cavity 15 in the substrate 11; further, the first cavity 15 etched out by using a dry etching process to penetrate the first heating layer 133 and the support layer 12 has an effect of heat insulation for the first heating layer 133.

[0049] Further, in some embodiments, deposit a second protective layer 22 on at least part of the surface of the support layer 12, deposit a third protective layer 23 on at least part of the surface of the second conductive layer 21. The second protective layer 22 and the third protective layer 23 are an integral part to reduce the environmental pollution of the second conductive layer 21 by the outside world, thereby reducing the effect of oxidation.

[0050] Further, in some embodiments, an isolation layer 202 is deposited on at least part of the surface of the second heating layer 201, and a radiation layer 203 is deposited on at least part of the surface of the isolation layer 202. The isolation layer 202 is disposed between the second heating layer 201 and the radiation layer 203 to reduce the possibility of short circuit caused by direct contact between the second heating layer 201 and the radiation layer 203. The second light source layer 20 includes the second heating layer 201, the isolation layer 202, and the radiation layer 203. The isolation layer 202 is selected from silicon dioxide or silicon nitride, specifically silicon dioxide. The radiation layer 203 is selected from amorphous carbon materials or black silicon materials.

[0051] In some embodiments, a dry etching process is used to penetrate through the second light source layer 20 and the support layer 12 to etch out a second cavity 24 in the substrate 11. Further, a dry etching process is used to penetrate through the radiation layer 203, the isolation layer 202, the second heating layer 201, and the support layer 12 to achieve the effect of heat insulation for the second heating layer 201.

[0052] Further, in some embodiments, a method for manufacturing a light source chip includes the following steps:

[0053] Provide a substrate 11, deposit a support layer 12 on the surface of the substrate 11, deposit a functional layer on the surface of the support layer 12, and respectively etch out a first conductive layer 131, a first heating layer 133, a second conductive layer 21, and a second heating layer 201. The first conductive layer 131 is electrically connected to the first heating layer 133, and the second conductive layer 21 is electrically connected to the second heating layer 201.

[0054] Deposit a first protective layer 132 on at least part of the surface of the support layer 12, deposit a first protective layer 14 on at least part of the surface of the first conductive layer 131. The first protective layer 132 and the first protective layer 14 are an integral part. Deposit a second protective layer 134 on at least part of the surface of the first heating layer 133. Deposit a second protective layer 22 on at least part of the surface of the support layer 12, deposit a third protective layer 23 on at least part of the surface of the second conductive layer 21. The second protective layer 22 and the third protective layer 23 are an integral part. Deposit an isolation layer 202 on at least part of the surface of the second heating layer 201, and deposit a radiation layer 203 on at least part of the surface of the isolation layer 202.

[0055] The first light source layer 13 includes the first heating layer 133 and the second protective layer 134, and the second light source layer 20 includes the second heating layer 201, the isolation layer 202, and the radiation layer 203.

[0056] Use a dry etching process to penetrate through the first light source layer 13 and the support layer 12 to etch out a first cavity 15 in the substrate 11, and use a dry etching process to penetrate through the second light source layer 20 and the support layer 12 to etch out a second cavity 24 in the substrate 11.

[0057] In some embodiments, the substrate 11 is selected from silicon, the support layer 12 is selected from silicon dioxide or silicon nitride, specifically silicon nitride; the deposition process is selected from one of LPCVD, APCVD, PECVD, and PVD.

[0058] The present application also provides a sensor 100, which includes a light source chip 110. The light source chip includes a first light source part 1 and a second light source part 2; the light source chip includes a substrate 11 and a support layer 12; the support layer 12 is disposed on the substrate 11; the first light source part 1 includes the substrate 11, the support layer 12, and a first light source layer 13; the first light source layer 13 is disposed on the support layer 12. Along the thickness direction Z of the light source chip, the first light source layer 13 is farther from the substrate 11 than the support layer 12; the second light source part 2 includes the substrate 11, the support layer 12, and a second light source layer 20; the second light source layer 20 is disposed on the support layer 12. Along the thickness direction Z of the light source chip, the second light source layer 20 is farther from the substrate 11 than the support layer 12; wherein the first light source layer 13 can emit a first light wave, and the second light source layer 20 can emit a second light wave whose wavelength is greater than or less than the wavelength of the first light wave, specifically as Figure 8 shown.

[0059] In the sensor of the present application, the sensor 100 includes a light source chip 110 and a photodetector 120. The light source chip 110 includes a first light source part 1 and a second light source part 2. The first light source part 1 includes a first light source layer 13, and the second light source part 2 includes a second light source layer 20. The photodetector 120 has a first detection part and a second detection part, which respectively receive the light sources emitted by the first light source part 1 and the second light source part 2; on the one hand, integrating the first light source part 1 and the second light source part 2 into a dual light source on one light source chip 110 can reduce the volume of the light source chip 110, and further reduce the occupied volume of the light source chip 110 in the sensor 100; on the other hand, the second light source layer 20 can emit a light wave with a wavelength range greater than that of the first light source layer 13. The first light source layer 13 can be used as a comparison light source to exclude the influence of environmental factors. The second light source layer 20 is used as a measurement light source and has a high absorption rate for the substance to be detected. According to the difference in the absorption rates of the first light source layer 13 and the second light source layer 20 for the substance to be detected, and through the difference in the electrical signals output by the first detection part and the second detection part, the concentration of the substance to be detected is detected, thereby improving the detection accuracy of the sensor 100.

[0060] The above embodiments are only used to illustrate the present application and do not limit the technical solutions described in the present application. The understanding of the present application should be based on those skilled in the art. Although this specification has described the present application in detail with reference to the above embodiments, those of ordinary skill in the art should understand that those skilled in the art can still modify the present application or make equivalent substitutions, and all technical solutions and their improvements that do not depart from the spirit and scope of the present application should be covered within the scope of the claims of the present application.

Claims

1. A light source chip, characterized in that, the light source chip includes a first light source part (1) and a second light source part (2); the light source chip includes a substrate (11) and a support layer (12), and the support layer (12) is disposed on the substrate (11); the first light source part (1) includes the substrate (11), the support layer (12) and a first light source layer (13); the first light source layer (13) is disposed on the support layer (12), and along the thickness direction (Z) of the light source chip, the first light source layer (13) is away from the substrate (11) relative to the support layer (12); the second light source part (2) includes the substrate (11), the support layer (12) and a second light source layer (20); the second light source layer (20) is disposed on the support layer (12), and along the thickness direction (Z) of the light source chip, the second light source layer (20) is away from the substrate (11) relative to the support layer (12).

2. The light source chip according to claim 1, characterized in that, the first light source layer (13) can emit a first light wave, and the second light source layer (20) can emit a second light wave whose wavelength is greater than or less than the wavelength of the first light wave.

3. The light source chip according to claim 1, characterized in that, the first light source part (1) includes a first conductive layer (131), a first protective layer (132) and a first protection layer (14), the first conductive layer (131) is electrically connected to the first light source layer (13), at least part of the first conductive layer (131) and at least part of the first protective layer (132) are both disposed on the support layer (12); at least part of the first protection layer (14) covers the surface of the first conductive layer (131); the first protective layer (132) and the first protection layer (14) are an integral part.

4. The light source chip according to claim 1, characterized in that, the first light source layer (13) includes a first heating layer (133) and a second protective layer (134), the first heating layer (133) is disposed on the support layer (12), the second protective layer (134) covers at least part of the surface of the first heating layer (133), and along the thickness direction (Z) of the light source chip, the second protective layer (134) is away from the support layer (12) relative to the first heating layer (133); the first heating layer (133) is selected from at least one of tungsten, platinum and nickel-chromium alloy; the second protective layer (134) is selected from silicon dioxide or silicon nitride.

5. The light source chip according to any one of claims 1-4, characterized in that, the first light source part (1) has a first cavity (15), and the first cavity (15) is disposed on the substrate (11); along the thickness direction (Z) of the light source chip, the first cavity (15) and the first light source layer (13) are respectively located on both sides of the support layer (12).

6. The light source chip according to claim 1, characterized in that, The second light source part (2) includes a second conductive layer (21), a second protective layer (22) and a third protective layer (23). The second conductive layer (21) is electrically connected to the second light source layer (20). At least part of the second conductive layer (21) and at least part of the second protective layer (22) are both disposed on the support layer (12). At least part of the third protective layer (23) is disposed on the surface of the second conductive layer (21). The second protective layer (22) and the third protective layer (23) are an integral part.

7. The light source chip according to claim 1 or 6, characterized in that the second light source layer (20) includes a second heating layer (201), an isolation layer (202) and a radiation layer (203). The second heating layer (201) is disposed on the support layer (12). The isolation layer (202) is disposed on the second heating layer (201). The radiation layer (203) is disposed on the isolation layer (202). Along the thickness direction (Z) of the light source chip, the radiation layer (203) is farther from the second heating layer (201) than the isolation layer (202), and the second heating layer (201) is farther from the substrate (11) than the support layer (12). The second heating layer (201) is selected from at least one of tungsten, platinum and nickel-chromium alloy; the isolation layer (202) is selected from silicon dioxide or silicon nitride; the radiation layer (203) is selected from amorphous carbon material or black silicon material.

8. The light source chip according to claim 7, characterized in that the first light source part (1) has a first cavity (15), and the second light source part (2) has a second cavity (24). The first cavity (15) and the second cavity (24) are both disposed on the substrate (11). Along the thickness direction (Z) of the light source chip, the first cavity (15) and the first light source layer (13) are respectively located on both sides of the support layer (12); the second cavity (24) and the second light source layer (20) are respectively located on both sides of the support layer (12). Defining the horizontal direction (X) as perpendicular to the thickness direction (Z) of the light source chip, along the horizontal direction (X), there is a spacing between the first cavity (15) and the second cavity (24). The volumes of the first cavity (15) and the second cavity (24) are the same, and both the first cavity (15) and the second cavity (24) communicate with the outside.

9. A manufacturing method of a light source chip, characterized in that the manufacturing method includes the following steps: providing a substrate (11) and depositing a support layer (12) on at least part of the surface of the substrate (11); depositing a first light source layer (13) on at least part of the surface of the support layer (12), and depositing a second light source layer (20) on at least part of the surface of the support layer (12).

10. A sensor, characterized in that The sensor includes a light source chip, and the light source chip includes a first light source portion (1) and a second light source portion (2); the light source chip includes a substrate (11) and a support layer (12); the support layer (12) is disposed on the substrate (11). The first light source portion (1) includes the substrate (11), the support layer (12), and a first light source layer (13); the first light source layer (13) is disposed on the support layer (12), and along the thickness direction (Z) of the light source chip, the first light source layer (13) is away from the substrate (11) relative to the support layer (12). The second light source portion (2) includes the substrate (11), the support layer (12), and a second light source layer (20); the second light source layer (20) is disposed on the support layer (12), and along the thickness direction (Z) of the light source chip, the second light source layer (20) is away from the substrate (11) relative to the support layer (12).

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