Temperature measurement method and temperature measurement system applied to semiconductor equipment

Abstract

The invention provides a temperature measurement method and system applied to semiconductor equipment, and the method comprises the steps: carrying out the temperature control of a semiconductor equipment processing chamber according to a target temperature, and receiving heat radiation emitted from the processing chamber through a light filtering device, the photoelectric detection device receives and converts the light information of the light with the specific wave band emitted by the light filtering device into voltage information, and the main control device obtains the measured temperature according to the voltage information, the voltage-temperature corresponding function # imgabs0 # and the magnitude relation between the target temperature T and the pre-stored reference temperature. The # imgabs 1 # contains the corresponding relation between the effective wavelength and the temperature of the light filtering device, and is obtained by carrying out light intensity measurement and calculation on heat radiation emitted by a standard heat source at different set temperatures by using a temperature measurement calibration system containing the light filtering device, so that the mutual influence between the measurable wave band of the photoelectric detection device and the bandwidth of the light filtering device can be reduced or avoided; and temperature measurement deviation caused by deviation between the actual central wavelength and the marked central wavelength of the light filtering device is avoided.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor measurement and control, and particularly to a temperature measurement method and a temperature measurement system applied to semiconductor equipment. Background Art

[0002] During the process of growing a semiconductor material layer on a substrate using a semiconductor device, such as a chemical vapor deposition device, temperature plays a crucial role in the growth quality of the semiconductor material layer. It is necessary to precisely control and effectively monitor the temperature of the processing chamber of the semiconductor device, such as the reaction chamber, during the growth process.

[0003] In the prior art, during the process of thermally radiating and measuring a processing chamber of a high-temperature semiconductor device using an optical method for temperature monitoring, a band-pass filter is used to control the collected thermal radiation to emit light in a specific wavelength band. A photodetector and a host computer are used to convert the optical information of the specific wavelength band into post-information related to radiation energy, and the corresponding measured temperature is calculated using Planck's blackbody radiation formula.

[0004] Planck's blackbody radiation formula is related to wavelength and temperature. In the prior art, Planck's blackbody radiation formula is used to calculate the corresponding measured temperature, and the wavelength used for calculation is the set central wavelength value of the filter. This set central wavelength value is a fixed parameter value provided by the manufacturer. However, since the measurable wavelength of the photodetector is a band range rather than a specific wavelength value; the filter in the filtering device inevitably has a certain bandwidth due to processing accuracy, and due to the mutual influence between the measurable band of the photodetection device and the bandwidth of the filter, there is a certain deviation between the actual central wavelength of the filter and its marked set central wavelength. Please refer to Figure 1 , taking a filter with a bandwidth range of 800 - 900 nanometers as an example, when controlling the temperature of a blackbody furnace as a standard heat source to be 400 degrees Celsius, after the thermal radiation of the blackbody furnace passes through this filter and is tested by a spectrometer, the light intensity shows a significant changing trend with the bandwidth. Even when controlling the temperature of the blackbody furnace as high as 2400 degrees Celsius, the light intensity still has a changing trend with the bandwidth. It can be seen that whether it is high-temperature or low-temperature testing, a non-negligible systematic error will be introduced during the temperature measurement process, thus affecting the accuracy of the temperature measurement data.

[0005] Therefore, there is an urgent need for a new temperature measurement method and a temperature measurement system to improve the above problems. Summary of the Invention

[0006] The purpose of the present invention is to provide a temperature measurement method and a temperature measurement system applied to semiconductor equipment, so as to reduce or avoid temperature measurement deviation caused by the mutual influence between the measurable band of the photodetection device and the bandwidth of the filter, and the certain deviation between the actual central wavelength of the filter and its marked central wavelength.

[0007] In a first aspect, the temperature measurement method for semiconductor devices provided by the present invention includes: S0: providing a filter device, a photoelectric detection device, a main control device, and a semiconductor device, and the main control device pre-stores a voltage-temperature correspondence function ; S1: after controlling the temperature inside the processing chamber of the semiconductor device according to the target temperature T, receiving the thermal radiation of the processing chamber through the filter device and emitting light corresponding to a specific wavelength band; S2: receiving the light information of the specific wavelength band through the photoelectric detection device and converting it into voltage information; S3: obtaining the measured temperature through the main control device according to the voltage information, the voltage-temperature correspondence function , and the magnitude relationship between the target temperature T and the pre-stored reference temperature; the voltage-temperature correspondence function is:

[0008] When the target temperature T does not exceed the reference temperature, When the target temperature T exceeds the reference temperature, ; a and b are constants, and the reference temperature is 700-900 degrees Celsius; is the correspondence relationship between the effective wavelength and temperature of the filter device obtained by measuring and calculating the light intensity of the thermal radiation emitted by a standard heat source at different set temperatures using a temperature measurement calibration system including the filter device, is the corresponding effective wavelength value calculated according to the correspondence relationship between the effective wavelength and temperature of the filter device when the temperature control of the standard heat source is the upper limit temperature .

[0009] Optionally, is ; are polynomial coefficients, and n is a positive integer greater than or equal to 1.

[0010] Optionally, the filter device includes a band-pass filter, and the bandwidth range of the band-pass filter is 50-200 nanometers.

[0011] Optionally, before performing the step S1, the following steps are performed: S01: providing a standard heat source and a light intensity detection device; S02: respectively measuring the light intensity of the thermal radiation emitted by the standard heat source at different set temperatures through the filter device and the light intensity detection device; S03: calculating by the main control device according to the results of the light intensity measurement to obtain the corresponding effective wavelength values at each of the set temperatures ; S04: fitting the corresponding effective wavelength values at each of the set temperatures by the main control device to obtain the correspondence relationship between the effective wavelength and temperature of the filter device .

[0012] Optionally, the corresponding effective wavelength values at each of the set temperatures are obtained by the following formula:

[0013] wherein, is the wavelength, is the corresponding spectral response function obtained by performing the light intensity measurement on the thermal radiation emitted at each of the set temperatures, is the blackbody radiation formula.

[0014] Optionally, the steps of performing the light intensity measurement on the thermal radiation emitted by the standard heat source at different set temperatures by the filter device and the light intensity detection device respectively include: controlling the standard heat source to emit each thermal radiation at different set temperatures not lower than 400 degrees Celsius; receiving each of the thermal radiations through the filter device and emitting corresponding single light beams; receiving by the light intensity detection device and obtaining each of the spectral response functions according to the light information of each of the single light beams.

[0015] Optionally, in step S03, the steps of calculating by the main control device according to the result of the light intensity measurement include: calculating, by the main control device, the corresponding effective wavelength values at each of the set temperatures according to the spectral response function and the blackbody radiation formula .

[0016] Optionally, the steps of controlling the standard heat source to emit each thermal radiation at different set temperatures not lower than 400 degrees Celsius include: controlling the standard heat source to emit each of the thermal radiations after reaching the corresponding temperature steady state at different set temperatures from 400 to 2000 degrees Celsius.

[0017] Optionally, before performing step S1, the following steps are performed: providing a standard heat source, and the main control device pre-stores an initial voltage-temperature correspondence function ; controlling the standard heat source to emit each thermal radiation at different set temperatures; receiving each of the thermal radiations through the filter device and emitting corresponding single light beams; receiving the light information of each of the single light beams by the photoelectric detection device and converting it into corresponding voltage information; obtaining the a and b constants by the main control device according to the corresponding voltage information at each of the set temperatures and the initial voltage-temperature correspondence function ; ; wherein, is the set central wavelength value of the filter device.

[0018] Optionally, the operating wavelength range of the photoelectric detection device is 200 to 1000 nanometers.

[0019] In a second aspect, the temperature measurement system provided by the present invention includes: a filter device for receiving thermal radiation in the processing chamber of a semiconductor device and emitting light corresponding to a specific wavelength band; a photoelectric detection device disposed on the light-emitting optical path of the filter device or connected to the filter device to achieve optical communication, for receiving and converting the optical information of the specific wavelength band light into voltage information; a main control device communicatively connected to the photoelectric detection device, pre-storing a reference temperature and the voltage-temperature correspondence function , for obtaining the measured temperature according to the magnitude relationship between the reference temperature and the target temperature controlled in the processing chamber, the voltage information, and the voltage-temperature correspondence function ; ; When the target temperature T does not exceed the reference temperature, When the target temperature T exceeds the reference temperature, ; a and b are constants, and the reference temperature is 700 to 900 degrees Celsius; is the correspondence relationship between the effective wavelength and temperature of the filter device obtained by measuring and calculating the light intensity of the thermal radiation emitted by a standard heat source at different set temperatures using a temperature measurement calibration system including the filter device, is when the temperature control of the standard heat source is the upper limit temperature The corresponding effective wavelength value calculated according to the correspondence relationship between the effective wavelength and temperature of the filter device.

[0020] Optionally, is ; are polynomial coefficients, and n is a positive integer greater than or equal to 1.

[0021] Optionally, the filter device includes a band-pass filter, and the bandwidth range of the band-pass filter is 50 - 200 nanometers.

[0022] Optionally, the operating wavelength range of the photoelectric detection device is 200 to 1000 nanometers.

[0023] Compared with the prior art, the beneficial effects of the temperature measurement method and temperature measurement system of the present invention are that the voltage-temperature correspondence function pre-stored in the main control device , in is the correspondence relationship between the effective wavelength and temperature of the filter device obtained by measuring and calculating the light intensity of the thermal radiation emitted by a standard heat source at different set temperatures using a temperature measurement calibration system including the filter device. Through the correspondence relationship between the effective wavelength and temperature of the filter device This is beneficial to reducing or avoiding the temperature measurement deviation caused by the mutual influence between the measurable wavelength band of the optoelectronic detection device and the bandwidth of the filter device, and the deviation between the actual central wavelength of the filter device and its marked central wavelength. Description of the Drawings

[0024] Figure 1 It is a trend graph of the change of light intensity with the wavelength range of the filter detected by a spectrometer after receiving the light in a specific wavelength band emitted after the thermal radiation of blackbody furnaces at different temperatures by using the same filter. Figure 2 It is a schematic assembly diagram of the semiconductor device and the temperature measurement device provided by the embodiment of the present invention. Figure 3 It is a flowchart of the temperature measurement method provided by the embodiment of the present invention. Figure 4 It is a structural block diagram of the temperature measurement calibration system for obtaining the corresponding relationship between the effective wavelength and temperature of the filter device provided by the embodiment of the present invention. Figure 5 It is a flowchart of obtaining the corresponding relationship between the effective wavelength and temperature of the filter device provided by the embodiment of the present invention. Figure 6 It is a schematic curve diagram of a spectral response function provided by the embodiment of the present invention. Figure 7 It is a corresponding relationship curve between the effective wavelength and temperature of the filter device obtained by fitting according to the corresponding effective wavelengths at each set temperature of the standard heat source provided by the embodiment of the present invention. Figure 8 It is a trend comparison diagram of the deviation values of the measured temperatures before and after correction with the change of the measured temperature provided by the embodiment of the present invention. Figure 9 It is a trend comparison diagram of the deviation values of the measured temperatures before and after correction with the change of the measured temperature provided by the embodiment of the present invention. Detailed Embodiments

[0025] To make the objectives, technical solutions, and advantages of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings of the present invention. Apparently, the described embodiments are some, but not all, of the embodiments of the present invention. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without making creative efforts shall fall within the protection scope of the present invention. Unless otherwise defined, the technical terms or scientific terms used herein shall have the ordinary meanings understood by those of ordinary skill in the art in the field to which the present invention belongs. The words such as "including" used herein mean that the elements or objects appearing before this word cover the elements or objects listed after this word and their equivalents, without excluding other elements or objects.

[0026] In the present invention, the terms "first" and "second" are used only for descriptive purposes and should not be construed as indicating or implying relative importance. The term "plurality" refers to two or more, unless otherwise clearly defined.

[0027] The present invention provides a processing chamber for a semiconductor device, such as Figure 2 the process chamber of the vapor growth device shown. A temperature measurement system composed of a filter device 12, a photoelectric detection device 14, and a main control device 15 is provided in Figure 2 the process chamber shown. Specifically, the filter device 12 is provided on an optical window (not shown in the figure) provided on the spraying device 16 to receive the thermal radiation in the process chamber through the spraying holes 17 of the spraying device 16 and the optical window, and emit light in a specific wavelength band. After receiving the thermal radiation, the filter device allows light in a specific wavelength band to pass through, and its selection is based on the range of the wavelength band of the thermal radiation emitted by the temperature-measured structure. For example, taking the Metal-Organic Chemical Vapor Deposition (MOCVD) process as an example, the susceptor 19 carrying the substrate 18 is controlled to reach the reaction temperature, the reaction pressure in the process chamber is controlled, and group III metal organic compound gas and group V hydride gas are provided to the substrate 18 through the spraying device 16. The group III metal organic compound gas and the group V hydride gas decompose and react near the upper part of the substrate and deposit on the surface of the substrate to form a semiconductor film. Semiconductor films with different compositions emit thermal radiation in different wavelength bands at a certain temperature. In some specific embodiments, a heater is provided below the susceptor 19 to heat the susceptor 19, and the heat transfer from the susceptor 19 to the substrate 18 enables the temperature of the substrate 18 to reach the reaction temperature requirement.

[0028] The photoelectric detection device 14 is electrically connected to the filter device 12, receives the light in the specific wavelength band, and converts the optical information of the light in the specific wavelength band into electrical information, such as voltage information. The main control device 15 is electrically connected to the photoelectric detection device 14 and calculates the measured temperature according to the pre-stored voltage-temperature correspondence function and the received voltage information.

[0029] In the embodiment of the present invention, the temperature measurement system composed of the filter device 12, the photoelectric detection device 14, and the main control device 15 is a radiation temperature measurement system.

[0030] In some embodiments, the filter device 12 is a filter.

[0031] In some embodiments, the filter device 12 is composed of a lens and a filter. The thermal radiation emitted through the optical window of the process chamber is converged by the lens and then acts on the filter to emit light in a specific wavelength band.

[0032] In some embodiments, the filter device 12 includes a condenser part and a filter part. The condenser part and the filter part are connected by an optical fiber. The condenser part includes a lens for converging the thermal radiation emitted from the optical window of the process chamber. The filter part includes a filter for receiving the light beam emitted from the condenser part, filtering it, and then emitting light in a specific wavelength band.

[0033] In some embodiments, the filter device 12 further includes a condenser part disposed on the optical path of the light emitted from the filter part or the filter, for converging the light in a specific wavelength band emitted from the filter part or the filter.

[0034] In some embodiments, the photoelectric detection device 14 is a photodetector.

[0035] In some embodiments, the main control device 15 is a host computer.

[0036] In some embodiments, the filter is a band-pass filter with a bandwidth range of 50 - 200 nanometers.

[0037] In some embodiments, the operating wavelength range of the photoelectric detection device is 200~1000 nanometers.

[0038] The bandwidth of the filter determines the spectral range through which the radiation passes, while the operating wavelength range of the photoelectric detection device determines the spectral range to which it can effectively respond. A good match between the spectral characteristics of the two can ensure the accuracy of temperature measurement.

[0039] Since the main control device 15 pre-stores a voltage-temperature correspondence function , this function includes the correspondence between the effective wavelength of the filter device and the temperature, and this correspondence between the effective wavelength and the temperature is applicable within a wide temperature range (for example Figure 7 the temperature range shown with a span of more than 1500 degrees), the temperature measurement method provided by the embodiments of the present invention is not only applicable to low-temperature (for example, below 700 degrees) temperature measurement, but also applicable to high-temperature temperature measurement (for example, above 700 degrees). It not only avoids the limitation of solely relying on the parameters provided by the filter device manufacturer, but also can be applicable to a relatively wide filter device bandwidth range, and enables a good spectral characteristic match with the photoelectric detection device.

[0040] As Figure 3 shown, the embodiments of the present invention provide a temperature measurement method applied to semiconductor equipment, including: S0: Provide a filter device, a photoelectric detection device, a main control device, and a semiconductor equipment, and the main control device pre-stores a voltage-temperature correspondence function; S1: After controlling the temperature in the processing chamber of the semiconductor equipment according to the target temperature T, receive the thermal radiation of the processing chamber through the filter device and emit light in a corresponding specific wavelength band; S2: Receive the optical information of the specific band light through the photoelectric detection device and convert it into voltage information; S3: Obtain the measured temperature through the main control device according to the voltage information, the voltage-temperature correspondence function and the magnitude relationship between the target temperature T and the pre-stored reference temperature.

[0041] Specifically, the voltage-temperature correspondence function is: ; When the target temperature T does not exceed the reference temperature,

[0042] When the target temperature T exceeds the reference temperature, .

[0043] Where: a and b are constants, is the correspondence relationship between the effective wavelength and temperature obtained by measuring and calculating the light intensity of the thermal radiation emitted by the standard heat source 11 at different set temperatures by using the temperature measurement calibration system including the filter device 12; is the effective wavelength value corresponding to the filter device 12 obtained according to the correspondence relationship between the effective wavelength and temperature when the standard heat source 11 is controlled at the upper limit temperature .

[0044] The values of the a and b constants are obtained through the following process: Before performing step S1, perform the following steps: S001: Provide the standard heat source 11, and the main control device 15 pre-stores the initial voltage-temperature correspondence function ; S002: Control the standard heat source 11 to emit thermal radiation at the set temperature; S003: Receive the thermal radiation through the filter device 12 and emit the corresponding single beam; S004: Receive the optical information of the single beam through the photoelectric detection device 14 and convert it into the corresponding voltage information; S005: Repeat S002 to S004, so that the standard heat source 11 emits the corresponding thermal radiation at each different set temperature, and obtain the a and b constants through the main control device 15 according to the corresponding voltage information at each set temperature and the initial voltage-temperature correspondence function .

[0045] Wherein, ; is the set center wavelength value of the filter device.

[0046] In some specific embodiments, the set temperature of the standard heat source 11 is set to T01, and when it reaches the temperature steady state stage, the filter device 12 receives the thermal radiation from the optical window of the standard heat source 11, performs a filtering function, and then emits light corresponding to a specific wavelength band. After the photoelectric detection device 14 receives the light of the specific wavelength band, it converts the optical information into corresponding voltage information. The standard heat source 11 is controlled to rise to another set temperature of T02 and reach the temperature steady state stage. The filter device 12 receives the thermal radiation from the optical window of the standard heat source 11, performs a filtering function, and then emits light corresponding to a specific wavelength band. After the photoelectric detection device 14 receives the light of the specific wavelength band, it converts the optical information into corresponding voltage information. 2. The main control device 15 calculates a and b based on each voltage information and the formula. Specifically: ;

[0047] In some embodiments, both T01 and T02 are not lower than 1000 degrees Celsius. The radiation intensity of the blackbody thermal radiation signal is not the same at each wavelength. For example, at 800 degrees Celsius, the thermal radiation intensity near the 400 nm wavelength is 9 orders of magnitude lower than that at 900 nm. Calibrating the constants a and b at high temperatures is beneficial to reducing or avoiding systematic errors caused by processing weak thermal radiation signals.

[0048] In some embodiments, both T01 and T02 are not lower than 1200 degrees Celsius.

[0049] The process of calculating the constants in the initial voltage-temperature function using the temperature measurement calibration system composed of the standard heat source, the filter device, the photoelectric detection device, and the main control device is carried out on the premise that the set central wavelength value of the filter device is assumed to be a fixed value within a limited set temperature range of the standard heat source (usually a high temperature range to ensure sufficient signal intensity). As Figure 1 shown, there is a certain deviation between the actual central wavelength of the filter and the marked central wavelength, and it is related to temperature. Therefore, it has quite limitations. Once the target temperature changes slightly, for example, it is lower than the set temperature of the standard heat source, it is very difficult to apply, and the phenomenon of inaccurate measured temperature will occur.

[0050] For example, in this Embodiment 1, a blackbody furnace of the MIKRON M390 model is used as the standard heat source. The filter device includes an Edmund #67-786 filter with a set central wavelength of 850 nm. The photoelectric detection device is a photodetector of the Thorlabs PDF10A2 model. The main control device is a Programmable Logical Controller (PLC for short), which stores the initial voltage-temperature correspondence function , specifically, the blackbody furnace is controlled to set the temperatures to 1000 degrees Celsius and 1200 degrees Celsius respectively to execute the aforementioned S001 to S005. The calibrated a and b constants are 163621 and 14983 respectively, so as to determine . The blackbody furnace is controlled to set the temperatures to 400 degrees Celsius, 500 degrees Celsius, 600 degrees Celsius and 700 degrees Celsius respectively. The emitted thermal radiation is processed by the filter device and the photoelectric detection device to obtain the corresponding voltage information. The main control device calculates the measured temperature according to the calibrated a and b constants and the corresponding voltage information. The absolute value of the difference between the measured temperature and the corresponding set temperature is the deviation value. The change trend between the deviation value and the measured temperature is as shown by Figure 8 the black dotted line, and the deviation values are all above 2 degrees Celsius. Even when the blackbody furnace is controlled to set the temperature above 700 degrees Celsius, the change trend between the obtained deviation value and the measured temperature is as shown by Figure 9 the black dotted line, and the deviation values between 700 and 900 degrees Celsius are also all above 1 degree Celsius.

[0051] For the use of semiconductor processing equipment, such as depositing a semiconductor material layer on a substrate surface by an MOCVD device, precise temperature control is very important. For example, when growing a GaN layer on a silicon substrate to prepare a Light Emitting Diode (LED for short), if the temperature deviation is 1 degree Celsius, the central wavelength of the LED will deviate by more than 1 nm from the central wavelength required by the process design. Seriously, it will cause a fundamental change in the light-emitting performance of the prepared LED. For example, the red shift of the LED central wavelength makes it impossible to obtain the originally required blue LED.

[0052] Therefore, it is necessary to correct , that is, without changing a and b of the function, by correcting to obtain , and then obtain .

[0053] In some embodiments, is , is the polynomial coefficient.

[0054] It should be noted that when n takes different values, the coefficients of the corresponding polynomials are different. The highest degree of the polynomial in this embodiment is 4. When higher precision is required, the degree n of the polynomial can take an integer greater than 4. When lower precision is required, the degree n of the polynomial can take an integer in [0, 3]. The required precision depends on the fluctuation of the substrate temperature value in the semiconductor device. Excessive precision requirements are prone to overfitting, and too low precision requirements will reduce the accuracy of the substrate temperature value. The highest degree of the polynomial that meets the working conditions is obtained through repeated iteration. The above repeated iteration process can be carried out by the trial-and-error method and cross-validation to ensure that the new energy-temperature conversion function can meet the precision requirements and stably reflect the actual working conditions.

[0055] In some embodiments, n = 4, .

[0056] As Figure 5 shown, in some embodiments, before performing the step S1, the following steps are performed: S01: Provide a standard heat source and a light intensity detection device; S02: Measure the light intensity of the thermal radiation emitted by the standard heat source at different set temperatures through the filter device and the light intensity detection device respectively; S03: Calculate by the main control device according to the results of the light intensity measurement to obtain the corresponding effective wavelength values at each of the set temperatures; S04: Fit the corresponding effective wavelength values at each of the set temperatures by the main control device to obtain the corresponding relationship between the effective wavelength and the temperature of the filter device.

[0057] In some specific embodiments, the standard heat source 11 is a blackbody furnace.

[0058] In some specific embodiments, the light intensity detection device 13 is a spectrometer.

[0059] In some specific embodiments, the method for fitting the effective wavelength values at each group of calibration temperatures includes least squares fitting.

[0060] In some embodiments, the step of calculating by the main control device 15 according to the results of the light intensity measurement includes: calculating by the main control device 15 the corresponding effective wavelength values at each of the set temperatures according to the spectral response function and the blackbody radiation formula.

[0061] In some embodiments, a temperature measurement calibration system is provided as Figure 4 shown, for performing S01 - S04.

[0062] In some embodiments, the corresponding effective wavelength values at each of the set temperatures are obtained by the following formula:

[0063] wherein, is the wavelength, is the spectral response function obtained by performing the light intensity measurement at the set temperature Ti, is the blackbody radiation formula.

[0064] Specifically, the blackbody radiation formula is:

[0065] λ is the wavelength, T is the temperature, h is the Planck constant, c is the speed of light, and k B is the Boltzmann constant.

[0066] In some examples, a schematic diagram of the curve of the spectral response function is as shown in Figure 6 where the abscissa is the wavelength and the ordinate is the relative intensity, specifically the Spectral Response Characteristic Intensity.

[0067] In some embodiments, the steps of respectively performing light intensity measurements on the thermal radiation emitted by the standard heat source 11 at different set temperatures by means of the filter device 12 and the light intensity detection device 13 include: controlling the standard heat source 11 to emit each thermal radiation at different set temperatures not lower than 400 degrees Celsius; respectively receiving each of the thermal radiations by means of the filter device 12 and emitting corresponding single light beams; receiving by means of the light intensity detection device 13 and obtaining each of the spectral response functions according to the light information of each of the single light beams.

[0068] In some embodiments, the step of controlling the standard heat source 11 to emit each thermal radiation at different set temperatures not lower than 400 degrees Celsius includes: controlling the standard heat source 11 to reach the corresponding temperature steady state at different set temperatures of 400 to 2000 degrees Celsius and then respectively emit each of the thermal radiations.

[0069] In step S02 of some specific embodiments, the set temperature of the standard heat source is controlled to be T1 and the temperature steady state stage is reached. The filter device receives the thermal radiation from the optical window of the standard heat source and performs a filtering function to emit light in a specific band. After receiving the light in the specific band, the light intensity detection device measures the light intensity to obtain . The main control device is based on and Obtain the effective wavelength value at the set temperature T1 Control the set temperatures of the standard heat source to be T1, T2…Tmax respectively, and obtain the effective wavelength values corresponding to each set temperature to The steps are as described above

[0070] Specifically, the corresponding effective wavelength values at each of the set temperatures satisfy:

[0071] Specifically, the set temperature Ti takes T 1 , T 2 …T max ; The blackbody radiation formula at the set temperature satisfies:

[0072] In some specific embodiments, the number of groups of the set temperatures is at least 4, including a first temperature, a second temperature, a third temperature, and a fourth temperature set in chronological order , a second temperature , a third temperature and a fourth temperature , for example, satisfying: < < < , .

[0073] In some examples, using the blackbody furnace of Example 1, a spectrometer with the model QE65000 equipped with the filter device of Example 1, controlling the blackbody furnace to emit thermal radiation at each set temperature, the corresponding effective wavelengths at each set temperature The corresponding relationship curve between the effective wavelength and temperature of the filter device 12 obtained by fitting is as Figure 7 shown, where the abscissa is the set temperature and the ordinate is the effective wavelength Figure 7 Satisfy , where is 960.60; is -1.81×10 -2 ; is 1.47×10 -5 ; is -6.03×10 -9 ; is 9.71×10 -3 . Figure 7 In is 2000 degrees Celsius

[0074] In the embodiment of the present invention, when the target temperature for controlling the temperature inside the processing chamber of the high-temperature semiconductor device exceeds 700 degrees Celsius, in .

[0075] In Embodiment 2, the blackbody furnace, the light filtering device, the photoelectric detection device, and the main control device set as a PLC provided in the foregoing Embodiment 1 are adopted. Different from Embodiment 1, the PLC in Embodiment 2 stores a voltage-temperature correspondence function , in which the constants a and b are obtained through the foregoing steps S001 to S005 and are 163621 and 14983 respectively; , specifically Figure 7 the corresponding relationship obtained by fitting as shown. The set temperature of the blackbody furnace is controlled to be stepwise increased from 700 degrees Celsius to each set temperature, and the difference between adjacent set temperatures is 100 degrees Celsius. The emitted thermal radiation is processed by the light filtering device and the photoelectric detection device to obtain the corresponding voltage information for each. The main control device calculates the measured temperature according to and the corresponding voltage information for each. The absolute value of the difference between the measured temperature and the corresponding set temperature is the deviation value. The change trend between the deviation value and the measured temperature is as shown by the red line in Figure 9 , and the deviation value is very small, controlled within 0.2 degrees Celsius.

[0076] In the embodiment of the present invention, when the target temperature for controlling the temperature inside the processing chamber of the semiconductor device does not exceed 700 degrees Celsius, in

[0077] In Embodiment 2, the difference from Embodiment 1 is that the voltage-temperature correspondence function stored in the main control device in , specifically Figure 7 is the corresponding relationship obtained by fitting as shown, where when T is 2000 degrees Celsius, it is calculated from the corresponding relationship obtained by fitting as shown in Figure 7 the value. The set temperature of the blackbody furnace is controlled to be stepwise increased from 400 degrees Celsius to each set temperature, and the difference between adjacent set temperatures is 100 degrees Celsius. The emitted thermal radiation is processed by the light filtering device and the photoelectric detection device to obtain the corresponding voltage information for each. The main control device calculates the measured temperature according to and the corresponding voltage information for each. The absolute value of the difference between the measured temperature and the corresponding set temperature is the deviation value. The change trend between the deviation value and the measured temperature is as shown by the red line in Figure 8 , and the deviation value is very small, controlled within 0.2 degrees Celsius.

[0078] Although the embodiments of the present invention have been described in detail above, it will be apparent to those skilled in the art that various modifications and variations can be made to these embodiments. However, it should be understood that such modifications and variations are all within the scope and spirit of the present invention as described in the claims. Moreover, the present invention as described herein may have other embodiments and can be implemented or realized in various ways.

Claims

1. A temperature measurement method applied to semiconductor equipment, characterized in that: include: S0: Provide a filter device, a photoelectric detection device, a main control device and a semiconductor device, wherein the main control device has a voltage-temperature correspondence function stored in advance ; S1: After controlling the temperature in the processing chamber of the semiconductor device according to the target temperature T, the filter device receives the thermal radiation of the processing chamber and emits light of a corresponding specific wavelength band; S2: receiving the light information of the light in the specific wavelength band through the photoelectric detection device and converting it into voltage information; S3: the main control device performs the following operations according to the voltage information and the voltage-temperature correspondence function: and the measured temperature is obtained by the magnitude relationship between the target temperature T and the pre-stored reference temperature; The voltage-temperature correspondence function for: When the target temperature T does not exceed the reference temperature, When the target temperature T exceeds the reference temperature, ; a, b are constants, and the reference temperature is 700-900 degrees Celsius; In order to measure and calculate the light intensity of the thermal radiation emitted by the standard heat source at different set temperatures using the temperature measurement calibration system including the filter device, the corresponding relationship between the effective wavelength of the filter device and the temperature is obtained. When the temperature control of the standard heat source is the upper limit temperature The corresponding effective wavelength value is calculated according to the corresponding relationship between the effective wavelength and temperature of the filter device.

2. The temperature measurement method according to claim 1, characterized in that: for ; are polynomial coefficients, and n is a positive integer greater than or equal to 1.

3. The temperature measurement method according to claim 1, characterized in that: The optical filtering device comprises a bandpass filter, and the bandwidth of the bandpass filter ranges from 50 to 200 nanometers.

4. The temperature measurement method according to claim 1, characterized in that: Before executing the S1 step, perform the following steps: S01: Provide standard heat source and light intensity detection device; S02: measuring the light intensity of the thermal radiation emitted by the standard heat source at different set temperatures by means of the light filtering device and the light intensity detection device; S03: The main control device calculates the corresponding effective wavelength value at each set temperature according to the result of the light intensity measurement. ; S04: The main control device calculates the corresponding effective wavelength value at each set temperature. The corresponding relationship between the effective wavelength and temperature of the filter device is obtained by fitting .

5. The temperature measurement method according to claim 4, characterized in that: The corresponding effective wavelength value at each set temperature Obtained by the following formula: in, is the wavelength, is the corresponding spectral response function obtained by measuring the light intensity of the emitted thermal radiation at each set temperature, is the black body radiation formula.

6. The temperature measurement method according to claim 4, characterized in that: The steps of measuring the light intensity of the thermal radiation emitted by the standard heat source at different set temperatures by the light filtering device and the light intensity detection device include: Controlling the standard heat source to emit heat radiation at different set temperatures not less than 400 degrees Celsius; Receiving each of the thermal radiations respectively through the optical filtering device, and emitting corresponding single light beams; The light intensity detection device receives and obtains each spectral response function according to the light information of each single light beam.

7. The temperature measurement method according to claim 6, characterized in that: In step S03, the step of calculating by the main control device according to the result of the light intensity measurement includes: The main control device calculates the corresponding effective wavelength value at each set temperature according to the spectral response function and the black body radiation formula .

8. The temperature measurement method according to claim 6, characterized in that: The steps of controlling the standard heat source to emit heat radiation at different set temperatures not less than 400 degrees Celsius include: The standard heat source is controlled to reach a corresponding temperature steady state at different set temperatures of 400 to 2000 degrees Celsius and then emit each of the thermal radiations.

9. The temperature measurement method according to claim 1, characterized in that: Before executing step S1, perform the following steps: Provide a standard heat source, the main control device pre-stores the initial voltage-temperature corresponding function ; Controlling the standard heat source to emit heat radiations respectively at different set temperatures; Receiving each of the thermal radiations respectively through the optical filtering device, and emitting corresponding single light beams; The photoelectric detection device receives the optical information of each single light beam and converts it into corresponding voltage information; The main control device is configured to detect the corresponding voltage information at each set temperature and the initial voltage-temperature corresponding function Get a and b constants; ； in, The central wavelength value of the filter device is set.

10. The temperature measurement method according to claim 1, characterized in that: The working wavelength range of the photoelectric detection device is 200-1000 nanometers.

11. A temperature measurement system, characterized in that: include: A filter device, used to receive thermal radiation in a processing chamber of a semiconductor device and emit light corresponding to a specific wavelength band; A photoelectric detection device, arranged on the light output path of the filter device or connected to the filter device to achieve optical communication, for receiving and converting the optical information of the light in the specific wavelength band into voltage information; A main control device is connected to the photoelectric detection device in communication, and has a reference temperature and a voltage-temperature corresponding function stored in advance. , for determining the voltage-temperature correspondence function according to the relationship between the reference temperature and the target temperature controlled in the processing chamber, the voltage information and the voltage-temperature correspondence function Get the measured temperature; ； When the target temperature T does not exceed the reference temperature, When the target temperature T exceeds the reference temperature, ; a, b are constants, and the reference temperature is 700-900 degrees Celsius; In order to measure and calculate the light intensity of the thermal radiation emitted by the standard heat source at different set temperatures using the temperature measurement calibration system including the filter device, the corresponding relationship between the effective wavelength of the filter device and the temperature is obtained. When the temperature control of the standard heat source is the upper limit temperature The corresponding effective wavelength value is calculated according to the corresponding relationship between the effective wavelength and temperature of the filter device.

12. The temperature measurement system according to claim 11, characterized in that: for ; are polynomial coefficients, and n is a positive integer greater than or equal to 1.

13. The temperature measurement system according to claim 11, characterized in that: The optical filtering device comprises a bandpass filter, and the bandwidth of the bandpass filter ranges from 50 to 200 nanometers.

14. The temperature measurement system according to claim 11, characterized in that: The working wavelength range of the photoelectric detection device is 200-1000 nanometers.

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