Temperature calibration method and temperature measurement system and method for high-temperature semiconductor equipment temperature measurement

Abstract

The present invention provides a temperature calibration method and an optical temperature measurement method for measuring the temperature of high-temperature semiconductor equipment. The temperature calibration method includes: providing a standard heat source, a filter device, a light intensity detection device, and a main control device. The main control device pre-stores a wavelength response function #imgabs0# of a photoelectric detection device used to measure the temperature of the high-temperature semiconductor equipment; using the filter device and the light intensity detection device to measure the light intensity of thermal radiation emitted by the standard heat source at different set temperatures #imgabs1# of not less than 700 degrees Celsius, to obtain corresponding spectral response functions #imgabs2#; and using the main control device to obtain a corrected center wavelength #imgabs5# based on the wavelength response function #imgabs3# and the spectral response functions #imgabs4#. By recalibrating the center wavelength of the filter device, this method avoids the limitations of relying solely on parameters provided by the filter device manufacturer, more accurately reflects the performance of the filter device in actual use, and thus improves temperature measurement accuracy.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor measurement and control technology, and in particular to a temperature calibration method and a temperature measurement system and method for temperature measurement of high-temperature semiconductor equipment. Background Art

[0002] In the prior art, optical methods are used to detect the temperature inside the reaction chamber of high-temperature semiconductor equipment, such as vapor deposition equipment. A filter is used to bandpass-control the collected thermal radiation to emit light in a specific wavelength band. A photodetector and a host computer are used to convert the optical information of the light in this specific wavelength band into information related to the radiation energy. The corresponding measured temperature is calculated using Planck's blackbody radiation formula.

[0003] Planck's blackbody radiation formula is related to wavelength and temperature. Existing technologies use Planck's blackbody radiation formula to calculate the corresponding measured temperature, specifying a fixed wavelength, such as the center wavelength marked on a filter. However, the measurable wavelength band of the photoelectric detection device and the bandwidth of the filter interact with each other, and there is a certain deviation between the actual center wavelength of the filter and its marked center wavelength. Even when measuring high temperatures (above 700 degrees Celsius), this can introduce significant systematic errors, affecting the accuracy of the measurement data.

[0004] Therefore, there is an urgent need for a temperature calibration method for temperature measurement of high-temperature semiconductor devices to improve the above problems. Summary of the Invention

[0005] The purpose of the present invention is to provide a temperature calibration method and a temperature measurement system and method for measuring the temperature of high-temperature semiconductor equipment. By recalibrating the center wavelength of the filter device, the limitations of relying solely on the parameters provided by the filter device manufacturer are avoided, and the performance of the filter device in actual use can be more realistically reflected, thereby facilitating temperature measurement accuracy.

[0006] In a first aspect, the present invention provides a temperature calibration method for measuring the temperature of a high-temperature semiconductor device, characterized in that the temperature calibration method comprises: providing a standard heat source, a filter device, a light intensity detection device and a main control device, wherein the main control device pre-stores a wavelength response function of a photoelectric detection device used for measuring the temperature of the high-temperature semiconductor device. ; The filter device and the light intensity detection device are used to detect the standard heat source at different set temperatures of not less than 700 degrees Celsius The light intensity of the thermal radiation emitted under the condition is measured to obtain the corresponding spectral response functions ; By the main control device according to the wavelength response function And each of the spectral response functions , and obtain the corrected central wavelength .

[0007] Optionally, the filtering device includes a narrow bandpass filter, and the bandwidth of the narrow bandpass filter does not exceed 50 nanometers.

[0008] Optionally, the main control device is configured to generate a wavelength response function And each of the spectral response functions , and obtain the corrected central wavelength The steps include: using the main control device according to the wavelength response function And each of the spectral response functions Get the set temperature The corresponding corrected central wavelength , and then through each of the correction center wavelengths The corrected central wavelength is obtained by calculating the average value method ; The corrected central wavelength The calculation formula is:

[0009] ;

[0010] Among them, min ~max is the operating wavelength range of the photoelectric detection device, and the photoelectric detection device is used to measure the temperature of the high-temperature semiconductor device.

[0011] Optionally, the standard heat source is set at different temperatures not less than 700 degrees Celsius by the filter device and the light intensity detection device. The steps of measuring the light intensity of the thermal radiation emitted by the standard heat source include: controlling the standard heat source to emit each thermal radiation at different set temperatures not lower than 700 degrees Celsius; receiving each thermal radiation through the filter device and emitting corresponding single light beams; receiving each of the thermal radiations through the light intensity detection device and obtaining each of the spectral response functions according to the light information of each of the single light beams. .

[0012] Optionally, it also includes providing a pre-stored initial voltage-temperature corresponding function The photoelectric detection device is used to detect the standard heat source at different measuring temperatures. The thermal radiation emitted is photoelectrically detected and converted into the corresponding original voltage information ; By the main control device according to the correction center wavelength , each of the original voltage information and pre-stored voltage response function Perform correction processing to obtain the corrected voltage response function The voltage response function for:

[0013]

[0014] Among them, C and is a constant, is the calibrated central wavelength of the filter device.

[0015] Optionally, the modified voltage response function for:

[0016]

[0017] in, is the corrected central wavelength.

[0018] Optionally, the standard heat source is set at different temperatures not less than 700 degrees Celsius by the filter device and the light intensity detection device. The steps of measuring the light intensity of the thermal radiation emitted by the standard heat source include: controlling the standard heat source to emit each thermal radiation at different set temperatures not lower than 700 degrees Celsius; receiving each thermal radiation through the filter device and emitting corresponding single light beams; receiving each of the thermal radiations through the light intensity detection device and obtaining each of the spectral response functions according to the light information of each of the single light beams. .

[0019] Optionally, the step of controlling the standard heat source to emit each heat radiation separately at different set temperatures not lower than 700 degrees Celsius includes controlling the standard heat source to emit each heat radiation separately after reaching a corresponding temperature steady state at different set temperatures of 700 to 2000 degrees Celsius.

[0020] In a second aspect, the present invention provides a temperature measurement system, comprising: a filter device for receiving thermal radiation within a high-temperature semiconductor processing device and emitting light of a corresponding wavelength band; a photoelectric detection device, arranged on the light output path of the filter device or connected to the filter device to achieve optical communication, for receiving and converting the optical information of the light of the specific wavelength band into corresponding voltage information; a main control device, which is in communication with the photoelectric detection device and has a pre-stored corrected voltage response function , according to the modified voltage response function and obtaining a measured temperature from the voltage information;

[0021]

[0022] in, is the corrected central wavelength obtained by the temperature calibration method, and C and c2 are constants.

[0023] Optionally, the filtering device includes a narrow bandpass filter, and the bandwidth of the narrow bandpass filter does not exceed 50 nanometers.

[0024] Optionally, the operating wavelength range of the photoelectric detection device is 200~1000 nanometers.

[0025] In a third aspect, the present invention provides a temperature measurement method, comprising: providing a high-temperature semiconductor device and the temperature measurement system; controlling the temperature inside the high-temperature semiconductor device to be not less than 700 degrees Celsius; receiving the thermal radiation emitted from the high-temperature semiconductor device through the filter device of the temperature measurement system and emitting a single light beam of a specific wavelength band; receiving and converting the optical information of the single light beam of a specific wavelength band into voltage information through the photoelectric detection device of the temperature measurement system; and performing a correction voltage response function according to the voltage information and a pre-stored correction voltage response function by the main control device of the temperature measurement system. Get the measured temperature.

[0026] Compared with the prior art, the temperature calibration method and temperature measurement system and method of the present invention for measuring the temperature of high-temperature semiconductor equipment have the following advantages: in the temperature calibration stage, the filter device and the light intensity detection device are used to measure the temperature of the standard heat source at different set temperatures of not less than 700 degrees Celsius. The light intensity of the thermal radiation emitted under the condition is measured to obtain the corresponding spectral response functions , and then the main control device is used according to the wavelength response function And each of the spectral response functions , and obtain the corrected central wavelength , where the wavelength response function Wavelength response function of the photoelectric detection device used to measure the temperature of the high-temperature semiconductor device , that is, the wavelength response function is used And each of the spectral response functions Correcting the center wavelength of the filter device avoids the limitation of relying solely on the parameters provided by the filter device manufacturer, and can more realistically reflect the performance of the filter device in actual use. The obtained corrected center wavelength is applied to the temperature measurement system of high-temperature semiconductor equipment, which can reduce or avoid the mutual influence between the measurable band of the photoelectric detection device and the bandwidth of the filter device, and the problem of a certain deviation between the actual center wavelength of the filter device and its marked center wavelength, which affects the temperature measurement accuracy. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] Figure 1 A schematic diagram of the assembly of a high-temperature semiconductor device and a temperature measurement device provided by an embodiment of the present invention;

[0028] Figure 2 A flow chart of a temperature calibration method for measuring temperature of high-temperature semiconductor equipment provided by an embodiment of the present invention;

[0029] Figure 3 The Q (λ) of the photodetector and the filter provided in the embodiment of the present invention The response curve of the photodetector to the received single beam Graph of

[0030] Figure 4 A schematic structural diagram of a temperature measuring device including a photoelectric detection device provided in an embodiment of the present invention;

[0031] Figure 5 This is a flow chart of an optical temperature measurement method provided by an embodiment of the present invention. DETAILED DESCRIPTION

[0032] In order to make the purpose, technical solutions and advantages of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the present invention. Unless otherwise defined, the technical terms or scientific terms used herein should be the common meanings understood by people with ordinary skills in the field to which the present invention belongs. The words "including" and similar words used in this article mean that the elements or objects appearing before the word cover the elements or objects listed after the word and their equivalents, without excluding other elements or objects.

[0033] In the present invention, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance. The term "plurality" refers to two or more, unless otherwise clearly defined.

[0034] Processing chambers of high-temperature semiconductor equipment, such as Figure 1 The process chamber of the vapor phase growth equipment shown in FIG. 1 is provided with a temperature measurement system composed of a filter device 12, a photoelectric detection device 14, and a main control device 15. Figure 1The process chamber shown. Specifically, the filter device 12 is disposed on an optical window (not shown) located on the spray device 16. It receives thermal radiation from the process chamber through the spray holes 17 of the spray device 16 and the optical window, and emits light of a specific wavelength. After receiving the thermal radiation, the filter device allows light of a specific wavelength to pass through. Its selection depends on the wavelength range of the thermal radiation emitted by the temperature-measured structure. For example, in the MOCVD process, the susceptor 19 supporting the substrate 18 is controlled to reach the reaction temperature, the reaction pressure in the process chamber is controlled, and a Group III metal organic compound gas and a Group V hydride gas are supplied to the substrate 18 via the spray device 16. The Group III metal organic compound gas and the Group V hydride gas decompose and react near the substrate surface, depositing on the substrate surface to form a semiconductor film. Semiconductor films of different compositions emit thermal radiation of different wavelengths at a given temperature. In some specific embodiments, a heater is provided under the base 19 to heat the base 19 , and the base 19 transfers heat to the substrate 18 so that the temperature of the substrate 18 reaches the reaction temperature requirement.

[0035] The photoelectric detection device 14 is connected to the filter device 12 so that the two can communicate with each other. The photoelectric detection device 14 receives light of a specific wavelength band and converts the optical information of the light of the specific wavelength band into electrical information, such as voltage information. The main control device 15 is electrically connected to the photoelectric detection device 14 and modifies the voltage response function according to the pre-stored voltage response function. The test temperature is calculated based on the received voltage information.

[0036] In the embodiment of the present invention, the temperature measurement system composed of the filter device 12, the photoelectric detection device 14 and the main control device 15 is a radiation temperature measurement system.

[0037] In some embodiments, the filter device 12 is a filter.

[0038] In some embodiments, the filter device 12 is composed of a lens and a filter. The thermal radiation emitted through the optical window of the process chamber is converged by the lens and then filtered to emit light of a specific wavelength band.

[0039] In some embodiments, the filter device 12 comprises a focusing portion and a filtering portion, which are connected by an optical fiber. The focusing portion includes a lens for concentrating thermal radiation emitted through the optical window of the process chamber. The filtering portion includes a filter that receives and filters the light beam emitted by the focusing portion before emitting light of a specific wavelength band.

[0040] In some embodiments, the filter device 12 further includes a focusing portion disposed on the light path of the filter portion or the filter, for focusing the light of a specific wavelength band emitted by the filter portion or the filter.

[0041] In some embodiments, the photodetection device 14 is a photodetector.

[0042] In some embodiments, the main control device 15 is a host computer.

[0043] In some embodiments, the optical filter is a bandpass filter having a bandwidth of no more than 50 nanometers, and in some embodiments, a bandwidth of no less than 10 nanometers.

[0044] In some embodiments, the operating wavelength range of the photodetection device is 200-1000 nanometers.

[0045] Since the bandwidth of the filter determines the spectral range of radiation passing through, and the operating wavelength range of the photoelectric detection device determines the spectral range in which it can effectively respond, a good match between the spectral characteristics of the two can ensure the accuracy of temperature measurement.

[0046] A bandpass filter with too wide a bandwidth can easily introduce more noise, affecting temperature measurement accuracy. When measuring high temperatures, the intensity of thermal radiation is high enough. Limiting the filter's bandwidth to a suitably narrow range ensures sufficient effective light signal and minimizes or eliminates the effects of noise. If the operating wavelength range of the photoelectric detection device is too narrow, it will be difficult to fully utilize the effective signal transmitted by the filter, thus affecting temperature measurement accuracy.

[0047] In view of the problems existing in the existing technology, such as Figure 2 As shown, the first embodiment of the present invention provides a temperature calibration method for measuring temperature of high-temperature semiconductor equipment, the temperature calibration method comprising:

[0048] S0: providing a standard heat source, a light filtering device, a light intensity detection device and a main control device, wherein the main control device pre-stores a wavelength response function of a photoelectric detection device used for measuring the temperature of the high-temperature semiconductor device;

[0049] S1: measuring the light intensity of the thermal radiation emitted by the standard heat source at different set temperatures not lower than 700 degrees Celsius by the light filtering device and the light intensity detection device to obtain corresponding spectral response functions;

[0050] S2: Obtaining a corrected central wavelength by the main control device according to the wavelength response function and each of the spectral response functions.

[0051] In this embodiment, the standard heat source is detected at different set temperatures by the filter device and the light intensity detection device. The light intensity of the thermal radiation emitted under the condition is measured to obtain the corresponding spectral response functions ; The main control device is used to measure the temperature of the high-temperature semiconductor device according to the wavelength response function of the photoelectric detection device used And each of the spectral response functions , and obtain the corrected central wavelength , avoiding the limitation of relying solely on parameters provided by the filter device manufacturer, and can more truly reflect the performance of the filter device in actual use. The obtained corrected center wavelength is applied to the temperature measurement system of high-temperature semiconductor equipment, which can reduce or avoid the mutual influence between the measurable band of the photoelectric detection device and the bandwidth of the filter device, and the problem of a certain deviation between the actual center wavelength of the filter device and its marked center wavelength, which affects the temperature measurement accuracy.

[0052] In some embodiments, the main control device is configured to generate a wavelength response function according to the wavelength response function. And each of the spectral response functions , and obtain the corrected central wavelength The steps include: using the main control device according to the wavelength response function And each of the spectral response functions Get the set temperature The corresponding corrected central wavelength , and then through each of the correction center wavelengths The corrected central wavelength is obtained by calculating the average value method .

[0053] The calculation formula is:

[0054] ;

[0055] Among them, min ~max is the working wavelength range of the photoelectric detection device; i is the index variable used to identify different set temperatures . Indicates that the set temperature The wavelength response function Q (λ) is the inherent characteristic data of the photoelectric detection device and is pre-stored in the main control device. Indicates that the set temperature Corrected central wavelength.

[0056] It is worth noting that the wavelength response function Q (λ) is used to characterize the response sensitivity of the photoelectric detection device to the intensity of light of different wavelengths. Used to characterize the response intensity of the light intensity detection device to the light in the specific wavelength band.

[0057] In some examples, the index variable i is a non-negative integer. When i is 1, 2, ..., m, the set temperature is 、 、…、 The corrected central wavelength is:

[0058] ;

[0059] In some embodiments, the light filtering device and the light intensity detection device are used to detect the standard heat source at different set temperatures not lower than 700 degrees Celsius. The step of measuring the light intensity of the thermal radiation emitted under the condition of the above-mentioned temperature includes: controlling the standard heat source to emit thermal radiation at different set temperatures not less than 700 degrees Celsius; receiving the thermal radiation through the filter device and emitting corresponding single light beams; receiving the thermal radiation through the light intensity detection device and obtaining the spectral response function based on the light information of each single light beam. In some examples, 700°C < … .

[0060] In some embodiments, the step of controlling the standard heat source to emit heat radiation at different set temperatures not less than 700 degrees Celsius includes the step of setting the temperature in groups of at least 4, and the calibration temperature being greater than or equal to 1000 degrees Celsius. … .

[0061] like Figure 4 As shown, in some embodiments, it also includes providing a pre-stored initial voltage-temperature corresponding function The photoelectric detection device is used to detect the standard heat source at different measuring temperatures. The thermal radiation emitted is photoelectrically detected and converted into the corresponding original voltage information .

[0062] In some embodiments, the main control device is used to modify the central wavelength according to the , each of the original voltage information and pre-stored voltage response function Perform correction processing to obtain the corrected voltage response function .

[0063] In some embodiments, the voltage response function for:

[0064]

[0065] Among them, C and is a constant, The nominal center wavelength of the filter assembly (i.e., the specific reference value provided by the manufacturer).

[0066] In some embodiments, the modified voltage response function for:

[0067]

[0068] in, is the corrected central wavelength obtained by the temperature calibration method, and C and c2 are constants.

[0069] In some examples, the first measured temperature T1 is obtained , at the second measured temperature Get ,use Solve for two constants. In some examples, multiple groups are used ~ Relational data utilization Fit and solve for two constants.

[0070] In some examples, the measured temperature is sequentially changed from the first measured temperature to the nth measured temperature. Taking the temperature control to the first measured temperature as an example, the standard heat source is controlled to take the first measured temperature as the target temperature until a steady state stage is reached, and then the corresponding Gradually increase the temperature and ensure that each measured temperature is the target temperature until the corresponding steady state stage is reached, and then measure the corresponding It helps to reduce measurement errors due to temperature transients, thereby improving the reliability and accuracy of the entire temperature correction method.

[0071] In some embodiments, the light filtering device and the light intensity detection device are used to detect the standard heat source at different set temperatures not lower than 700 degrees Celsius. The steps of measuring the light intensity of the thermal radiation emitted by the standard heat source include: controlling the standard heat source to emit each thermal radiation at different set temperatures not lower than 700 degrees Celsius; receiving each thermal radiation through the filter device and emitting corresponding single light beams; receiving each of the thermal radiations through the light intensity detection device and obtaining each of the spectral response functions according to the light information of each of the single light beams. .

[0072] Specifically, when setting the temperature The spectral response function under ; At set temperature The spectral response function under ; At set temperature The spectral response function under .

[0073] In some embodiments, the step of controlling the standard heat source to emit each thermal radiation at different set temperatures not lower than 700 degrees Celsius includes controlling the standard heat source to emit each thermal radiation after reaching the corresponding temperature steady state at different set temperatures of 700 to 2000 degrees Celsius.

[0074] like Figure 5 As shown, the second embodiment provides a temperature measurement method, including:

[0075] S01, provides a temperature measurement system for high-temperature semiconductor equipment, consisting of a filter device, a photoelectric detection device and a main control device;

[0076] S02, controlling the temperature inside the high-temperature semiconductor device to be no less than 700 degrees Celsius;

[0077] S03, receiving the thermal radiation emitted from the high-temperature semiconductor device through the optical filtering device and emitting a single light beam with a specific wavelength band;

[0078] S04, receiving and converting the optical information of the single light beam in the specific wavelength band into voltage information through the photoelectric detection device;

[0079] S05, the main control device corrects the voltage response function according to the voltage information and the pre-stored voltage response function Get the measured temperature.

[0080] In the specific embodiment 1, a MIKRON M390 blackbody furnace is used as the standard heat source, the filter device is an Edmund #86-651 filter with a set center wavelength of 950nm, the photoelectric detection device is a Thorlabs PDF10A2 photoelectric detector, the main control device is a PLC, and the storage .

[0081] Specifically, the temperature of the blackbody furnace was controlled to be 1200°C and 1500°C respectively to perform the temperature calibration step, and the calibration constants C and C2 were 1.867×10 6 and 1.44×10 7 The temperature of the black body furnace is controlled to be 700 degrees Celsius, 800 degrees Celsius, 900 degrees Celsius, 1000 degrees Celsius and 1100 degrees Celsius respectively. The emitted thermal radiation is processed by the filter device and the photoelectric detection device to obtain the corresponding voltage information. The main control device is calibrated according to the constants. The first measured temperature is calculated from the corresponding voltage information. See Table 1 for the set temperatures and first measured temperatures. The absolute value of the difference between each first measured temperature and the corresponding set temperature is the first deviation value. As can be seen from Table 1, even for high-temperature measurements above 700°C, the first deviation value is always above 1°C.

[0082] Precise temperature control is crucial for depositing semiconductor material layers on substrates using semiconductor processing equipment, such as MOCVD equipment. For example, when growing GaN layers on silicon substrates to form light-emitting diodes (LEDs), a temperature deviation of 1°C can cause the LED's center wavelength to deviate by more than 1nm from the desired wavelength in the process design. In severe cases, this can fundamentally alter the resulting LED's light output performance. For example, a red shift in the LED's center wavelength could prevent the desired blue LED from being produced.

[0083] In the specific embodiment 2, a spectrometer of model QE65000 equipped with the filter device of embodiment 1 is used. The main control device and the photoelectric detection device are the same as those of embodiment 1. like Figure 3 Specifically, the black body furnace is set to 700 degrees, 800 degrees, 900 degrees, 1000 degrees and 1100 degrees respectively, and the emitted thermal radiation is filtered and the light intensity detection device is used to obtain the corresponding .For example Figure 3 The corresponding temperature at 700 degrees is shown The photoelectric detection device The voltage response curve is Figure 3 shown The corrected central wavelength is calculated according to the calculation formula of the corrected central wavelength and the average value method. is 952 nanometers.

[0084] Furthermore, in Example 2, the devices and calibration steps of Example 1 are used to control the blackbody furnace to set temperatures of 700 degrees Celsius, 800 degrees Celsius, 900 degrees Celsius, 1000 degrees Celsius and 1100 degrees Celsius, respectively. The emitted thermal radiation is processed by the filter device and the photoelectric detection device to obtain corresponding voltage information. The main control device generates the corresponding voltage information according to the temperature. The corresponding voltage information is used to calculate the second measured temperature, as shown in Table 1. The absolute value of the difference between the second measured temperature and the corresponding set temperature is the second deviation value. As can be seen from Table 1, the second deviation value is significantly smaller than the first deviation value and is controlled within 0.5 degrees Celsius.

[0085] Table 1

[0086]

[0087] While the embodiments of the present invention have been described in detail above, it will be apparent to those skilled in the art that various modifications and variations of these embodiments are possible. However, it should be understood that such modifications and variations are within the scope and spirit of the present invention as set forth in the claims. Furthermore, the invention described herein is susceptible to other embodiments and may be practiced or implemented in a variety of ways.

Claims

1. A temperature calibration method for measuring temperature of high-temperature semiconductor equipment, characterized in that: The temperature calibration method comprises: Provide standard heat source, filter device, light intensity detection device, main control device and pre-stored initial voltage-temperature corresponding function The main control device pre-stores a wavelength response function of the photoelectric detection device used to measure the temperature of the high-temperature semiconductor device. ; The standard heat source is set at different temperatures not less than 700 degrees Celsius by the filter device and the light intensity detection device. The light intensity of the thermal radiation emitted under the condition is measured to obtain the corresponding spectral response functions ; The main control device is configured to detect the wavelength response function And each of the spectral response functions Get the set temperature The corresponding corrected central wavelength , and then correct the central wavelength by The corrected central wavelength is obtained by calculating the average value method ; The corrected central wavelength The calculation formula is: ； Among them, min ~max is the operating wavelength range of the photoelectric detection device; The photoelectric detection device is used to detect the standard heat source at different measuring temperatures. The thermal radiation emitted is photoelectrically detected and converted into the corresponding original voltage information ; The main control device corrects the central wavelength according to the , each of the original voltage information and pre-stored voltage response function Perform correction processing to obtain the corrected voltage response function ; The main control device uses the voltage information and the modified voltage response function Get the measured temperature; The voltage response function for: Among them, C and is a constant, is the calibrated central wavelength of the filter device.

2. The temperature calibration method according to claim 1, characterized in that: The optical filtering device includes a narrow bandpass filter, and the bandwidth of the narrow bandpass filter does not exceed 50 nanometers.

3. The temperature calibration method according to claim 1, characterized in that: The standard heat source is set at different temperatures not less than 700 degrees Celsius by the filter device and the light intensity detection device. The steps of measuring the light intensity of the thermal radiation emitted by the apparatus include: Controlling the standard heat source to emit various heat radiations at different set temperatures not lower than 700 degrees Celsius; Receiving each of the thermal radiations through the filter device and emitting corresponding single light beams; The spectral response functions are received by the light intensity detection device and obtained according to the light information of each single light beam. .

4. The temperature calibration method according to claim 1, characterized in that: The modified voltage response function for: in, is the corrected central wavelength.

5. The temperature calibration method according to claim 1, characterized in that: The standard heat source is set at different temperatures not less than 700 degrees Celsius by the filter device and the light intensity detection device. The steps of measuring the light intensity of the thermal radiation emitted by the apparatus include: Controlling the standard heat source to emit various heat radiations at different set temperatures not lower than 700 degrees Celsius; Receiving each of the thermal radiations through the filter device and emitting corresponding single light beams; The spectral response functions are received by the light intensity detection device and obtained according to the light information of each single light beam. .

6. The temperature calibration method according to claim 5, characterized in that: The step of controlling the standard heat source to emit each heat radiation at different set temperatures not lower than 700 degrees Celsius includes controlling the standard heat source to emit each heat radiation after reaching a corresponding temperature steady state at different set temperatures of 700 to 2000 degrees Celsius.

7. A temperature measurement system, characterized in that: include: A filter device for receiving thermal radiation from high-temperature semiconductor processing equipment and emitting light of a corresponding wavelength band; a photoelectric detection device, arranged on the light output path of the filter device or connected to the filter device to realize optical communication, for receiving and converting the optical information of the corresponding wavelength band light emitted by the filter device into corresponding voltage information; The main control device is connected to the photoelectric detection device and has a pre-stored correction voltage response function. , according to the modified voltage response function and obtaining a measured temperature from the voltage information; in, The corrected central wavelength is obtained by the temperature calibration method according to any one of claims 1 to 6, and C and c2 are constants.

8. The temperature measurement system according to claim 7, characterized in that: The optical filtering device includes a narrow bandpass filter, and the bandwidth of the narrow bandpass filter does not exceed 50 nanometers.

9. The temperature measurement system according to claim 7, characterized in that: The operating wavelength range of the photoelectric detection device is 200-1000 nanometers.

10. A temperature measurement method, characterized in that: include: Provide a high-temperature semiconductor device and the temperature measurement system according to claim 7; Controlling the temperature inside the high-temperature semiconductor device to be no less than 700 degrees Celsius; The filter device of the temperature measurement system receives the thermal radiation emitted from the high-temperature semiconductor device and emits a single light beam with a specific wavelength band; The photoelectric detection device of the temperature measurement system receives and converts the optical information of the single light beam in the specific wavelength band into voltage information; The main control device of the temperature measurement system is used to modify the voltage response function according to the voltage information and the pre-stored voltage response function. Get the measured temperature.

Images