Assembly structure including plurality of interstitials and method of making same

Abstract

The invention provides an assembly structure comprising a plurality of interstitials and a preparation method thereof. The assembly structure includes a base material and a plurality of interstitials disposed over the base material. Each of the plurality of spacers has a first side surface and a second side surface opposite to the first side surface. The second side surface is substantially parallel to the first side surface. A ratio of a height of the second side surface to a height of the first side surface is greater than 90%.

Description

Technical Field

[0001] This application claims the priority of U.S. Patent Application No. 18 / 518,728 (i.e., the priority date is "November 24, 2023"), the content of which is incorporated herein by reference in its entirety.

[0002] The present disclosure relates to an assembly structure and a method for preparing the same. In particular, it relates to an assembly structure including a plurality of spacers and a method for preparing the same. Background Art

[0003] Semiconductor structures are used in various electronic applications, and the size of semiconductor structures is continuously reduced to meet current application requirements. However, various problems occur during the size reduction and affect the final electronic characteristics, quality, cost, and yield. A typical memory element (e.g., a dynamic random access memory (DRAM) element) includes a plurality of openings or trenches formed by using a plurality of spacers as masks. As the size of DRAM elements is reduced and the size and / or pitch of the openings or trenches become smaller, the spacers will become a key issue.

[0004] The above description of "prior art" only provides background art and does not admit that the above description of "prior art" discloses the subject matter of the present disclosure, does not constitute the prior art of the present disclosure, and any description of the above "prior art" should not be regarded as any part of this case. Summary of the Invention

[0005] An embodiment of the present disclosure provides an assembly structure including a plurality of spacers. The assembly structure includes a base material; and a plurality of spacers disposed in the base material. Each of the plurality of spacers has a first side surface and a second side surface opposite to the first side surface. The second side surface is substantially parallel to the first side surface. A ratio of a height of the second side surface to a height of the first side surface is greater than 90%.

[0006] Another embodiment of the present disclosure provides a method for fabricating a plurality of spacer. The fabrication method includes providing a base material; forming a plurality of units over the base material, wherein each of the plurality of units includes a lower layer and a hard mask on the lower layer; forming a covering layer to cover the units, wherein the covering layer includes a plurality of first portions disposed on the respective upper surfaces of the plurality of units, a plurality of second portions disposed on the respective side surfaces of the plurality of units, and a plurality of third portions connecting the plurality of second portions; forming an upper material to cover the covering layer; removing the upper material and the plurality of first portions of the covering layer; removing the hard mask and the plurality of third portions of the covering layer; and removing the lower layer to form a plurality of spacers, wherein each of the plurality of spacers has a first side surface and a second side surface opposite to the first side surface, the second side surface is substantially parallel to the first side surface, and a ratio of a height of the second side surface to a height of the first side surface is greater than 90%.

[0007] Another embodiment of the present disclosure provides a method for fabricating a plurality of openings in a base material. The fabrication method includes providing a base material; forming a plurality of spacers over the base material, wherein each of the plurality of spacers has a first side surface and a second side surface opposite to the first side surface, the second side surface is substantially parallel to the first side surface, and a ratio of a height of the second side surface to a height of the first side surface is greater than 90%; and forming a plurality of openings in the base material by using the plurality of spacers as a plurality of mask structures.

[0008] The technical features and advantages of the present disclosure have been outlined rather broadly above so that the detailed description of the present disclosure below may be better understood. Other technical features and advantages constituting the subject matter of the claims of the present disclosure will be described below. Those of ordinary skill in the art to which the present disclosure pertains should understand that the concepts disclosed below and specific embodiments can be readily utilized as a basis for modifying or designing other structures or processes to achieve the same purposes as the present disclosure. Those of ordinary skill in the art to which the present disclosure pertains should also understand that such equivalent constructs do not depart from the spirit and scope of the present disclosure as defined by the appended claims. BRIEF DESCRIPTION OF THE DRAWINGS

[0009] A more complete understanding of the present disclosure can be obtained by referring to the detailed description and the claims. The present disclosure should also be understood to be associated with the element numbers of the drawings, and the element numbers of the drawings represent similar elements throughout the description.

[0010] Figure 1 is a cross-sectional schematic diagram illustrating the assembled structure of some embodiments of the present disclosure.

[0011] Figure 2 is a cross-sectional schematic diagram illustrating Figure 1The assembly structure, where the assembly structure includes a plurality of openings.

[0012] Figure 3 is a top view schematic diagram, illustrating Figure 1 the assembly structure.

[0013] Figure 4 is a cross-sectional schematic diagram, illustrating the assembly structure of some embodiments of the present disclosure.

[0014] Figure 5 is a cross-sectional schematic diagram, illustrating Figure 4 the assembly structure, where the assembly structure includes a plurality of openings.

[0015] Figure 6 is a top view schematic diagram, illustrating Figure 5 the assembly structure.

[0016] Figure 7 is a cross-sectional schematic diagram, illustrating the assembly structure of some embodiments of the present disclosure.

[0017] Figure 8 is a cross-sectional schematic diagram, illustrating Figure 7 the assembly structure, where the assembly structure includes a plurality of openings.

[0018] Figure 9 is a cross-sectional schematic diagram, illustrating the assembly structure of a comparative embodiment of the present disclosure.

[0019] Figure 10 is a cross-sectional schematic diagram, illustrating Figure 9 the assembly structure, where the assembly structure includes a plurality of openings.

[0020] Figures 11 to 20 Illustrates a method for preparing a plurality of openings in a base material according to some embodiments of the present disclosure.

[0021] Figures 21 to 26 Illustrates a method for preparing a plurality of openings in a base material according to some embodiments of the present disclosure.

[0022] Figure 27 is a process schematic diagram, illustrating a method for preparing a plurality of spacer elements according to some embodiments of the present disclosure.

[0023] Figure 28 is a process schematic diagram, illustrating a method for preparing a plurality of openings in a base material according to some embodiments of the present disclosure.

[0024] Among them, the reference numerals are explained as follows:

[0025] 1: Assembly structure

[0026] 1a: Assembly structure

[0027] 1b: Assembly structure

[0028] 1c: Assembly structure

[0029] 2: Spacer

[0030] 2a: Spacer

[0031] 2b: Spacer

[0032] 2c: Spacer

[0033] 3: Unit

[0034] 3a: Unit

[0035] 4: Overlayer

[0036] 4a: Overlayer

[0037] 5: Gap

[0038] 5a: Gap

[0039] 5b: Gap

[0040] 5c: Gap

[0041] 6: Upper material

[0042] 7: Etching gas

[0043] 8: Polymer

[0044] 10: Base material

[0045] 11: Sacrificial layer

[0046] 12: Intermediate layer

[0047] 14: Main body

[0048] 21: First side surface

[0049] 22: Second side surface

[0050] 23: Upper surface

[0051] 30: Lower layer

[0052] 30': Remaining part

[0053] 30a: Lower layer

[0054] 30a': Remaining part

[0055] 31: Upper surface

[0056] 32: Hard mask

[0057] 32a: Hard mask

[0058] 33: Side surface

[0059] 35: Gap

[0060] 41: First part

[0061] 41a: First part

[0062] 42: Second part

[0063] 42a: Second part

[0064] 43: Third part

[0065] 43a: Third part

[0066] 60: Remaining part

[0067] 61: Upper surface

[0068] 71: First part

[0069] 72: Second part

[0070] 73: Third part

[0071] 103: Opening

[0072] 103a: Opening

[0073] 103b: Opening

[0074] 103b1: First part

[0075] 103c: Opening

[0076] 103c1: First part

[0077] 103d: Opening

[0078] 103d1: First part

[0079] 111: Upper surface

[0080] 113: Protrusion

[0081] 114: Depression

[0082] 114c: First depression

[0083] 114d: Second depression

[0084] 321: Upper surface

[0085] 421: Upper surface

[0086] 800: Preparation method

[0087] 900: Preparation method

[0088] h21: Height

[0089] h21': Height

[0090] h22: Height

[0091] h22': Height

[0092] L1: Plane

[0093] L2: First Plane

[0094] S801: Step

[0095] S802: Step

[0096] S803: Step

[0097] S804: Step

[0098] S805: Step

[0099] S806: Step

[0100] S807: Step

[0101] S901: Step

[0102] S902: Step

[0103] S903: Step

[0104] W1: Width

[0105] W1a: Width

[0106] W1b: Width

[0107] W1b1: Maximum Width

[0108] W1c: Width

[0109] W1c1: Maximum Width

[0110] W1d: Width

[0111] W1d1: Maximum Width

[0112] W2: Width

[0113] W2a: Width

[0114] W2b: Width

[0115] W2c: Width

[0116] W5: Width

[0117] W5a: Width

[0118] W5b: Width

[0119] W5c: Width Detailed implementation manners

[0120] Specific examples of components and configurations are described below to simplify the embodiments of the present disclosure. Of course, these embodiments are only for illustration and are not intended to limit the scope of the present disclosure. For example, when it is described that the first component is formed on the second component, it may include an embodiment where the first and second components are in direct contact, or it may include an embodiment where additional components are formed between the first and second components so that the first and second components are not in direct contact. Additionally, the embodiments of the present disclosure may repeat reference numerals and / or letters in many examples. The purpose of these repetitions is to simplify and clarify, and unless otherwise specified in the text, they do not themselves represent a specific relationship between various embodiments and / or the configurations discussed.

[0121] It should be understood that although terms such as first, second, and third may be used herein to describe various elements, components, regions, layers, or sections, these elements, components, regions, layers, or sections are not limited by these terms. On the contrary, these terms are only used to distinguish one element, component, region, layer, or section from another region, layer, or section. Therefore, without departing from the teachings of the inventive concept of progressiveness of the present invention, the first element, component, region, layer, or section discussed below may be referred to as the second element, component, region, layer, or section.

[0122] The terms used herein are only for the purpose of describing specific embodiments and are not intended to limit the present invention. As used herein, the singular forms "a", "an", and "the" are also intended to include the plural forms unless the context clearly indicates otherwise. It will be further understood that when the terms "comprises" and / or "comprising" are used in this specification, these terms specify the presence of the stated features, integers, steps, operations, elements, and / or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups of the above.

[0123] Figure 1 is a cross-sectional schematic diagram illustrating the assembled structure 1 of some embodiments of the present disclosure. Figure 2 is a cross-sectional schematic diagram illustrating Figure 1 the assembled structure 1 of, where the assembled structure 1 includes a plurality of openings 103. Figure 3 is a top-view schematic diagram illustrating Figure 1 the assembled structure 1 of.

[0124] In some embodiments, the assembly structure 1 can be used to form a plurality of openings or trenches in a semiconductor element, and the semiconductor element includes a circuit, and the semiconductor element is, for example, a memory cell. In some embodiments, the memory cell can include a dynamic random access memory cell (DRAM cell).

[0125] The assembly structure 1 can include a body 14, an intermediate layer 12, a base material 10, a sacrificial layer 11, and a plurality of spacers 2. The body 14 can be a substrate and can include a dielectric material, such as an oxide material or a nitride material. In some embodiments, for example, the body 14 can be a substrate and can include silicon (Si), germanium (Ge), silicon germanium (SiGe), silicon carbide (SiC), silicon germanium carbide (SiGeC), gallium (Ga), gallium arsenide (GaAs), indium (In), indium arsenide (InAs), indium phosphide (InP), or other group IV-IV, III-V, or II-VI semiconductor materials.

[0126] The intermediate layer 12 can be disposed on the body 14. In some embodiments, the intermediate layer 12 can be a conductive layer or a dielectric layer, such as an oxide layer or a nitride layer. The base material 10 can be disposed on the intermediate layer 12. In some embodiments, for example, the base material 10 can be a carbon layer.

[0127] In some embodiments, the body 14 and the intermediate layer 12 can be omitted, and the base material 10 can be a substrate and can include a dielectric material, such as an oxide material or a nitride material. In some embodiments, for example, the base material 10 can be a substrate and can include silicon (Si), germanium (Ge), silicon germanium (SiGe), silicon carbide (SiC), silicon germanium carbide (SiGeC), gallium (Ga), gallium arsenide (GaAs), indium (In), indium arsenide (InAs), indium phosphide (InP), or other group IV-IV, III-V, or II-VI semiconductor materials.

[0128] The sacrificial layer 11 can be disposed on the base material 10. In some embodiments, for example, the sacrificial layer 11 can be a dielectric anti-reflection coating (DARC) layer. However, in other embodiments, the intermediate layer 12 and the base material 10 can also be sacrificial layers and can be removed after forming a plurality of openings in the body 14. The sacrificial layer 11 can have an upper surface 111 and include a plurality of protrusions 113 protruding from the upper surface 111 of the sacrificial layer 11. The protrusions 113 and the upper surface 111 of the sacrificial layer 11 can jointly define a plurality of recesses 114.

[0129] The spacers 2 can be spaced apart from each other. A material of the spacers 2 can include an oxide material such as silicon oxide or a nitride material such as silicon nitride. The spacers 2 can be disposed on the sacrificial layer 11. Accordingly, the spacers 2 can be disposed above the base material 10. The sacrificial layer 11 can be disposed between the base material 10 and the spacers 2. Each spacer 2 can be disposed on each protrusion 113. Each protrusion 113 can be substantially conformal with each spacer 2.

[0130] Each spacer 2 can have a first side surface 21 and a second side surface 22 opposite to the first side surface 21. The second side surface 22 can be substantially parallel to the first side surface 21. A ratio of a height h22 of the second side surface 22 to a height h21 of the first side surface 21 can be greater than 90%. A ratio of the height h22 of the second side surface 22 to the height h21 of the first side surface 21 can be greater than 97%. As Figure 1 shown, the ratio of the height h22 of the second side surface 22 to the height h21 of the first side surface 21 can be substantially equal to 100%. Accordingly, the height h22 of the second side surface 22 can be substantially equal to the height h21 of the first side surface 21. Each spacer 2 can further have an upper surface 23 to connect the first side surface 21 and the second side surface 22. The upper surface 23 can be a flat surface and can be perpendicular to the first side surface 21 and the second side surface 22. Each spacer 2 can present a rectangular shape in a cross-sectional view.

[0131] Each spacer 2 can have a width W2. One of the spacers 2 can have a uniform width W2 along a vertical direction. A gap 5 can be formed between two adjacent spacers 2 and can have a width W5. Each gap 5 can have a width W5. One of the gaps 5 can have a uniform width W5 along a vertical direction. The width W2 of the spacers 2 can be substantially equal to or different from the width W5 of the gap 5. As Figure 1 shown, the width W2 of the spacers 2 can be less than the width W5 of the gap 5. The width W5 of the gap 5 can be substantially equal to a width of the depression 114 of the sacrificial layer 11.

[0132] Please refer to Figure 2, an etching process (e.g., a dry etching process) can be performed. The spacer 2 can be configured to be a mask structure during the etching process (e.g., the dry etching process). Accordingly, portions of the sacrificial layer 11 and the base material 10 that are not covered by the spacer 2 can be removed. A plurality of openings 103 (or trenches or holes) can be formed in the base material 10. After the etching process (e.g., the dry etching process), since the spacer 2 is configured to be a masking structure during the formation of the openings 103 (or trenches or holes), the base material 10 can define a plurality of openings 103 (or trenches or holes) corresponding to the spacer 2. Each opening 103 can have a uniform width W1. One of the openings 103 can have a uniform width W1 along a vertical direction. That is, in a cross-sectional view, a first surface of a first sidewall of the opening 103 can be substantially parallel to a second surface of a second sidewall of the opening 103 opposite the first sidewall. Both the first surface and the second surface are planar. There can be no bow in the opening 103.

[0133] Please refer to Figure 3 , one of the spacers 2 can have a uniform width W2 along a horizontal direction, and one of the gaps 5 can have a uniform width W5 along a horizontal direction. Accordingly, one of the openings 103 can have a uniform width W1 along a horizontal direction. Thus, the line width roughness (LWR) problem and the line edge roughness (LER) problem can be improved. For example, the width W2 of the spacer 2 can be less than 30 nm. The width W5 of the gap 5 can be less than 30 nm. The width W1 of the opening 103 can be less than 30 nm. In some embodiments, if a plurality of conductive lines are formed using the assembly structure 1, the line width roughness (LWR) problem and the line edge roughness (LER) problem of the conductive lines can be improved.

[0134] In some embodiments, the spacer 2 and the sacrificial layer 11 can be removed after the etching process (e.g., the dry etching process). In some embodiments, the opening 103 can extend through the base material 10 and the intermediate layer 12 and can extend to the body 14. The spacer 2, the sacrificial layer 11, and the base material 10 can be removed after the etching process (e.g., the dry etching process).

[0135] Figure 4 is a cross-sectional schematic diagram illustrating the assembly structure 1a of some embodiments of the present disclosure. Figure 5 is a cross-sectional schematic diagram illustrating Figure 4 the assembly structure 1a of, where the assembly structure 1a includes a plurality of openings 103a. Figure 6 is a top-view schematic diagram illustrating Figure 5 the assembly structure 1a of.

[0136] The assembly structure 1a may include a main body 14, an intermediate layer 12, a base material 10, a sacrificial layer 11, and a plurality of spacers 2a. Figure 4 and Figure 5 The main body 14, intermediate layer 12, base material 10, sacrificial layer 11, and spacers 2a of Figure 1 and Figure 2 may be similar to the main body 14, intermediate layer 12, base material 10, sacrificial layer 11, and spacers 2 of

[0137] As Figure 4 shown, the intermediate layer 12 may be disposed on the main body 14. The base material 10 may be disposed on the intermediate layer 12. The sacrificial layer 11 may be disposed on the base material 10. The spacers 2a may be disposed on the sacrificial layer 11. Thus, the spacers 2a may be disposed above the base material 10. The sacrificial layer 11 may be disposed between the base material 10 and the spacers 2a. Each protrusion 113 may be substantially conformal with each spacer 2a.

[0138] Each spacer 2a may have a first side surface 21 and a second side surface 22 opposite to the first side surface 21. The second side surface 22 may be substantially parallel to the first side surface 21. The ratio of the height h22 of the second side surface 22 to the height h21 of the first side surface 21 may be greater than 90%. The ratio of the height h22 of the second side surface 22 to the height h21 of the first side surface 21 may be greater than 97%. As Figure 4 shown, the ratio of the height h22 of the second side surface 22 to the height h21 of the first side surface 21 may be substantially equal to 100%. Thus, the height h22 of the second side surface 22 may be substantially equal to the height h21 of the first side surface 21. Each spacer 2a may further have an upper surface to connect the first side surface 21 and the second side surface 22. The upper surface 23 may be a flat surface and may be perpendicular to the first side surface 21 and the second side surface 22. Each spacer 2 may present a rectangular shape in a cross-sectional view.

[0139] Each spacer 2a may have a width W2a. One of the spacers 2a may have a uniform width W2a along a vertical direction. A gap 5a may be formed between two adjacent spacers 2a and may have a width W5a. Each gap 5a may have a width W5a. One of the gaps 5a may have a uniform width W5a along a vertical direction. The width W2a of the spacer 2a may be substantially equal to the width W5a of the gap 5a.

[0140] Please refer to Figure 5, an etching process (e.g., a dry etching process) can be performed. The spacer 2a can be configured to be a mask structure during the etching process (e.g., the dry etching process). Thus, the portions of the sacrificial layer 11 and the base material 10 that are not covered by the spacer 2a can be removed. A plurality of openings 103a (or trenches or holes) can be formed in the base material 10. After the etching process (e.g., the dry etching process), since the spacer 2a is configured to be a mask structure during the formation of the openings 103a (or trenches or holes), the base material 10 can define a plurality of openings 103a (or trenches or holes) corresponding to the spacer 2a. Each opening 103a can have a uniform width W1a. One of the openings 103a can have a uniform width W1a along a vertical direction. That is, in a cross-sectional view, a first surface of a first sidewall of the opening 103a can be substantially parallel to a second surface of a second sidewall of the opening 103a opposite the first sidewall. Both the first surface and the second surface are planes. There can be no bowing in the opening 103a.

[0141] Please refer to Figure 6 , one of the spacers 2a can have a uniform width W2a along a horizontal direction, and one of the gaps 5a can have a uniform width W5a along a horizontal direction. Thus, one of the openings 103a can have a uniform width W1a along a horizontal direction. Therefore, the line width roughness (LWR) problem and the line edge roughness (LER) problem can be improved. For example, the width W2a of the spacer 2a can be less than 30 nm. The width W5a of the gap 5 can be less than 30 nm. The width W1a of the opening 103a can be less than 30 nm. In some embodiments, if the assembly structure 1a is used to form multiple wires, the line width roughness (LWR) problem and the line edge roughness (LER) problem of the wires can be improved.

[0142] Figure 7 is a cross-sectional schematic diagram illustrating the assembly structure 1b of some embodiments of the present disclosure. Figure 8 is a cross-sectional schematic diagram illustrating Figure 7 the assembly structure 1b, wherein the assembly structure 1b includes a plurality of openings 103b.

[0143] The assembly structure 1b can include a body 14, an intermediate layer 12, a base material 10, a sacrificial layer 11, and a plurality of spacers 2b. Figure 7 and Figure 8 the body 14, the intermediate layer 12, the base material 10, the sacrificial layer 11, and the spacers 2b of Figure 4 and Figure 5 can be similar to the body 14, the intermediate layer 12, the base material 10, the sacrificial layer 11, and the spacers 2a of

[0144] As Figure 7 shown, the intermediate layer 12 can be disposed on the main body 14. The base material 10 can be disposed on the intermediate layer 12. The sacrificial layer 11 can be disposed on the base material 10. The spacer 2b can be disposed on the sacrificial layer 11. Thus, the spacer 2b can be disposed above the base material 10. The sacrificial layer 11 can be disposed between the base material 10 and the spacer 2b. Each spacer 2b can be disposed on each protrusion 113. Each protrusion 113 can be substantially conformal with each spacer 2b.

[0145] Each spacer 2b can have a first side surface 21 and a second side surface 22 opposite to the first side surface 21. The second side surface 22 can be substantially parallel to the first side surface 21. A ratio of a height h22 of the second side surface 22 to a height h21 of the first side surface 21 can be substantially equal to 90%. Thus, the height h22 of the second side surface 22 can be substantially equal to 0.9 times the height h21 of the first side surface 21. The height h22 of the second side surface 22 can be less than the height h21 of the first side surface 21. Each spacer 2b can further have an upper surface 23 to connect the first side surface 21 and the second side surface 22. The upper surface 23 can include a curved surface and can not be perpendicular to the first side surface 21 and the second side surface 22.

[0146] Each spacer 2b can have a width W2b. One of the spacers 2b can have an inconsistent width W2b at its top end. A gap 5b can be formed between two adjacent spacers 2b, and can have a width W5b. Each gap 5b can have a width W5b. One of the gaps 5b can have a consistent width W5b along a vertical direction. The width W2b of the spacer 2b can be substantially equal to the width W5b of the gap 5b.

[0147] Please refer to Figure 8 , an etching process (e.g., a dry etching process) can be performed. The spacer 2b can be configured as a mask structure during the etching process (e.g., the dry etching process). Thus, portions of the sacrificial layer 11 and the base material 10 not covered by the spacer 2b can be removed. A plurality of openings 103b (or trenches or holes) can be formed in the base material 10. After the etching process (e.g., the dry etching process), since the spacer 2b is configured as a mask structure during the formation of the openings 103b (or trenches or holes), the base material 10 can define a plurality of openings 103b (or trenches or holes) corresponding to the spacers 2b. Each opening 103b can have an inconsistent width Wlb. Each opening 103b can include a first portion 103b1 having a maximum width W1b1. The first portions 103b1 of all the openings 103b can be disposed on the same plane L1 or at the same height.

[0148] That is to say, in a cross-sectional view, a first surface of a first sidewall of the opening 103b may not be parallel to a second surface of a second sidewall of the opening 103b that is opposite to the first sidewall. Both the first surface and the second surface are curved surfaces. There may be an arcuate shape in the opening 103b.

[0149] In some embodiments, when viewed from a top view, one of the spacer 2b may have a uniform width W2a along a horizontal direction, and one of the gaps 5a may have a uniform width W5a along a horizontal direction. Therefore, the line width roughness (LWR) problem and the line edge roughness (LER) problem can be improved. In some embodiments, if the assembly structure 1b is used to form multiple wires, the line width roughness (LWR) problem and the line edge roughness (LER) problem of the wires can be improved.

[0150] Figure 9 is a cross-sectional schematic diagram illustrating an assembly structure 1c of a comparative embodiment of the present disclosure. Figure 10 is a cross-sectional schematic diagram illustrating Figure 9 the assembly structure 1c, wherein the assembly structure 1c includes a plurality of openings 103c, 103d.

[0151] The assembly structure 1c may include a main body 14, an intermediate layer 12, a base material 10, a sacrificial layer 11, and a plurality of spacers 2c. Figure 9 and Figure 10 the main body 14, intermediate layer 12, base material 10, sacrificial layer 11, and spacer 2c of Figure 4 and Figure 5 the main body 14, intermediate layer 12, base material 10, sacrificial layer 11, and spacer 2a of

[0152] Each spacer 2c may have a first side surface 21 and a second side surface 22 opposite to the first side surface 21. The second side surface 22 may be substantially parallel to the first side surface 21. A ratio of a height h22 of the second side surface 22 to a height h21 of the first side surface 21 may be less than 90%. For example, a ratio of the height h22 of the second side surface 22 to the height h21 of the first side surface 21 may be equal to 60%. Therefore, the height h22 of the second side surface 22 may be substantially equal to 0.6 times the height h21 of the first side surface 21. Each spacer 2c may further have an upper surface 23 to connect the first side surface 21 and the second side surface 22. The upper surface 23 may include a curved surface and may not be perpendicular to the first side surface 21 and the second side surface 22. A profile of the curved upper surface 23 may be referred to as "a shoulder" or "a fan shape".

[0153] Each spacer 2c may have a width W2c. One of the spacers 2c may have an inconsistent width W2c at its top. A gap 5c may be formed between two adjacent spacers 2c and may have a width W5c. Each gap 5c may have a width W5c. One of the gaps 5c may have a consistent width W5c along a vertical direction. The width W2c of the spacer 2c may be substantially equal to the width W5c of the gap 5c.

[0154] In addition, the recesses 114 of the sacrificial layer 11 may have inconsistent depths. For example, the depth of a first recess 114c may be less than the depth of a second recess 114d.

[0155] Please refer to Figure 10 , an etching process (e.g., a dry etching process) may be performed. The spacer 2c may be configured to be a mask structure during the etching process (e.g., dry etching process). Thus, the portions of the sacrificial layer 11 and the base material 10 not covered by the spacer 2c may be removed. A plurality of openings (including a plurality of first openings 103c and a plurality of second openings 103d) may be formed in the base material 10. The shape of the first opening 103c may be different from the shape of the second opening 103d.

[0156] Each first opening 103c may have an inconsistent width W1c. Each first opening 103c may include a first portion 103c1 having a maximum width W1c1. The first portions 103c1 of all the first openings 103c may be disposed on a first plane L2. The first opening 103c may have a bow shape. In addition, each second opening 103d may have an inconsistent width W1d. Each second opening 103d may include a first portion 103d1 having a maximum width W1d1. The first portions 103d1 of all the second openings 103d may be disposed on a second plane L3. The second opening 103d may have a bow shape. The second plane L3 may be different from the first plane L2. The second plane L3 may be lower than the first plane L2.

[0157] In some embodiments, from a top view, the line width roughness (LWR) problem and the line edge roughness (LER) problem of the assembly structure 1c may be severe. In some embodiments, if the assembly structure 1c is used to form multiple wires, the line width roughness (LWR) problem and the line edge roughness (LER) problem of the wires may be severe.

[0158] Figures 11 to 20 An example of a method for preparing a plurality of openings 103 in the base material 10 according to some embodiments of the present disclosure. Figures 11 to 19Illustrate a method for preparing a plurality of vias 2 in a base material 10 according to some embodiments of the present disclosure.

[0159] Please refer to Figure 11 , a base material 10 can be provided. Figure 11 The base material 10 can be the same as or similar to Figure 1 the base material 10.

[0160] For example, in some embodiments, the base material 10 can be a carbon layer. In some embodiments, the base material 10 can be a substrate and can include a dielectric material, such as an oxide material or a nitride material. In some embodiments, the base material 10 can be a substrate and can include silicon (Si), germanium (Ge), silicon germanium (SiGe), silicon carbide (SiC), silicon germanium carbide (SiGeC), gallium (Ga), gallium arsenide (GaAs), indium (In), indium arsenide (InAs), indium phosphide (InP), or other group IV-IV, III-V, or II-VI semiconductor materials.

[0161] In some embodiments, the body 14 and the intermediate layer 12 can be formed or disposed below the base material 10. A sacrificial layer 11 can be formed or disposed on the base material 10. Figure 11 The body 14, the intermediate layer 12, and the sacrificial layer 11 can be the same as or similar to Figure 1 the body 14, the intermediate layer 12, and the sacrificial layer 11.

[0162] The body 14 can be a substrate and can include a dielectric material, such as an oxide material or a nitride material. In some embodiments, the body 14 can be a substrate and can include silicon (Si), germanium (Ge), silicon germanium (SiGe), silicon carbide (SiC), silicon germanium carbide (SiGeC), gallium (Ga), gallium arsenide (GaAs), indium (In), indium arsenide (InAs), indium phosphide (InP), or other group IV-IV, III-V, or II-VI semiconductor materials.

[0163] The intermediate layer 12 can be disposed between the base material 10 and the body 14. In some embodiments, the intermediate layer 12 can be a conductive layer or a dielectric layer, such as an oxide layer or a nitride layer. In some embodiments, the body 14 and the intermediate layer 12 can be omitted. For example, in some embodiments, the sacrificial layer 11 can be a dielectric anti-reflection coating (DARC) layer. However, in other embodiments, the intermediate layer 12 and the base material 10 can also be sacrificial layers and can be removed after forming a plurality of openings in the body 14. The sacrificial layer 11 can have an upper surface 111.

[0164] Please refer to Figure 12, Multiple units 3 may be formed or disposed above the base material 10. In some embodiments, the units 3 may be formed or disposed on the upper surface 111 of the sacrificial layer 11 and are spaced apart from each other by a gap 35. Each unit 3 may include a lower layer 30 and a hard mask 32 on the lower layer 30. The lower layer (UL) 30 may include a photoresist material and may be formed by coating. In some embodiments, the lower layer (UL) 30 may include a thermoplastic resin. The hard mask 32 may include a dielectric material (e.g., SiN and SiON), a metal material (e.g., Co and W), or an oxide material (e.g., La 2 O 3 , ZrO 2 and Al 2 O 3 ). The hard mask 32 can be used to pattern the lower layer (UL) 30. That is, the lower layer 30 can be patterned by using the hard mask 32 as a mask layer. Therefore, a width of the lower layer 30 can be substantially equal to a width of the hard mask 32. Each unit 3 may have a side surface 33 and an upper surface 31.

[0165] Please refer to Figure 13 , A covering layer 4 can be formed to cover the upper surfaces 111 of the units 3 and the sacrificial layer 11. The covering layer 4 may have a substantially uniform thickness. The material of the covering layer 4 may be the same as that of the spacer 2 of Figure 1 . The covering layer 4 may include a plurality of first portions 41, a plurality of second portions 42, and a plurality of third portions 43. The first portions 41 may be disposed on the upper surfaces 31 of the units 3. The second portions 42 may be disposed on the side surfaces 33 of the units 3. The third portions 43 may be disposed on the upper surface 111 of the sacrificial layer 11 and may connect the second portions 42. In some embodiments, a width of the lower layer 30 may be greater than a thickness of the covering layer 4. A gap between the second portions 42 of the covering layer 4 on two adjacent units 3 may be substantially equal to the width of the lower layer 30.

[0166] Then, an upper material 6 can be formed or disposed to cover the covering layer 4. The upper material 6 may extend into the gap 35 between the units 3. The upper material 6 may include a photoresist material and may be formed by coating. In some embodiments, the upper material 6 may include a thermoplastic resin. The material of the upper material 6 may be the same as or different from the material of the lower layer 30.

[0167] Please refer to Figure 14, for example, a part of the upper material 6 can be removed by a first etching process (e.g., dry etching) to retain a remaining part 60 of the upper material 6 disposed in the gap 35 between the cells 3. At the same time, a first part 41 of the cover layer 4 is exposed from the remaining part 60 of the upper material 6. The upper surface 61 of the remaining part 60 of the upper material 6 can be lower than the upper surface 31 of the cell 3.

[0168] Please refer to Figure 15 , for example, a first part 41 of the cover layer 4 and a part of the hard mask 32 can be removed by a second etching process (e.g., dry etching). In some embodiments, the hard mask 32 may not be completely removed. A remaining part of the hard mask 32 can be retained. An upper surface 421 of a second part 42 of the cover layer 4 can be a curved surface. An upper surface 321 of the remaining part of the hard mask 32 can be a curved surface. Thus, the hard mask 32 can have a curved upper surface 321. The upper surface 421 of the second part 42 of the cover layer 4 and the upper surface of the remaining part of the hard mask 32 can be continuous, i.e., they can be part of the same curved surface. As Figure 15 shown, the lower layer 30 may not be exposed to air. The upper surface 61 of the remaining part 60 of the upper material 6 can be substantially flush with the upper surface of the lower layer 30.

[0169] Please refer to Figure 16 , the remaining part 60 of the upper material 6 can be removed, for example, by stripping. Thus, the upper material 6 and the first part 41 of the cover layer 4 can be completely removed. Then, a third etching process (e.g., dry etching) can be performed. An etching gas 7 can be applied. The etching gas 7 can include fluorocarbons, such as C 4 F 6 and C 4 F 8 . The etching gas 7 can include a first part 71, a second part 72, and a third part 73. The first part 71 of the etching gas 7 can be used to remove an upper part of the second part 42 of the cover layer 4. The second part 72 of the etching gas 7 can be used to remove the third part 43 of the cover layer 4. The third part 73 of the etching gas 7 can be used to remove the remaining part of the hard mask 32. Thus, the hard mask 32 and the third part 43 of the cover layer 4 can be completely removed by using the etching gas 7.

[0170] Please refer to Figure 17, the etch gas 7 can be continuously applied. That is, the third etching process is continued. After removing the hard mask 32, the third portion 73 of the etch gas 7 can contact the lower layer 30 to remove the upper portion of the lower layer 30, thereby forming the remaining portion 30' of the lower layer 30. The first portion 71 of the etch gas 7 can continue to remove the upper portion of the second portion 42 of the cover layer 4 to form a plurality of spacer 2s. That is, the remaining portion of the second portion 42 of the cover layer 4 becomes the spacer 2s. During the third etching process, since the etch gas 7 has a high etching selectivity for the lower layer 30, the third portion 73 of the etch gas 7 and the upper portion of the lower layer 30 can react to form a polymer 8 to protect the spacer 2s. That is to say, during the third etching process, the by-products of the lower layer 30 (i.e., the polymer 8) can cover the upper surface 23 of the spacer 2s (i.e., the upper surface 421 of the second portion 42 of the cover layer 4) to prevent the first portion 71 of the etch gas 7 from further etching the spacer 2s (i.e., the remaining portion of the second portion 42 of the cover layer 4). Therefore, during the third etching process, the by-products of the lower layer 30 (i.e., the polymer 8) can protect the upper profile of the spacer 2s (i.e., the upper surface 421 of the second portion 42 of the cover layer 4).

[0171] Reference Figure 18 , in some embodiments, after the third etching process, the upper surface 301 of the remaining portion 30' of the lower layer 30 can be a flat surface. The upper surface 23 of the spacer 2s (i.e., the upper surface 421 of the second portion 42 of the cover layer 4) can be a flat surface. In some embodiments, the upper surface 301 of the remaining portion 30' of the lower layer 30 and the upper surface 23 of the spacer 2s (i.e., the upper surface 421 of the second portion 42 of the cover layer 4) can be substantially coplanar with each other. Therefore, the remaining portion 30' of the lower layer 30 and the two spacer 2s in contact with the remaining portion 30' together form a rectangular shape in the cross-sectional view. No "shoulder" or "fan shape" can be formed on the upper surface 23 of the spacer 2s (i.e., the upper surface 421 of the second portion 42 of the cover layer 4).

[0172] Please refer to Figure 19 , the remaining portion 30' of the lower layer 30 can be removed to form separate spacer 2s. Figure 19 The spacer 2s of Figure 1is the same as or similar to the spacer 2. In some embodiments, the remaining portion 30' of the lower layer 30 can be removed, for example, by stripping the remaining portion 30' of the lower layer 30, to leave the spacer 2 standing above the base material 10. The spacers 2 can be spaced apart from each other. The spacers 2 can be disposed on the sacrificial layer 11. Thus, the spacers 2 can be disposed above the base material 10. Each spacer 2 can have a first side surface 21 and a second side surface 22 opposite to the first side surface 21. The second side surface 22 can be substantially parallel to the first side surface 21. A ratio of a height h22' of the second side surface 22 to a height h21' of the first side surface 21 can be greater than 90%. A ratio of the height h22' of the second side surface 22 to the height h21' of the first side surface 21 can be greater than 97%. The ratio of the height h22' of the second side surface 22 to the height h21' of the first side surface 21 can be substantially equal to 100%. Thus, the height h22' of the second side surface 22 can be substantially equal to the height h21' of the first side surface 21. Each spacer 2 can further have an upper surface 23 to connect the first side surface 21 and the second side surface 22. The upper surface 23 can be a flat surface and can be perpendicular to the first side surface 21 and the second side surface 22. Each spacer 2 can present a rectangular shape in a cross-sectional view.

[0173] Each spacer 2 can have a width W2. One of the spacers 2 can have a consistent width W2 along a vertical direction. A gap 5 can be formed between two adjacent spacers 2 and can have a width W5. Each gap 5 can have a width W5. One of the gaps 5 can have a consistent width W5 along a vertical direction. The width W2 of the spacer 2 can be substantially equal to or different from the width W5 of the gap 5. The width W2 of the spacer 2 can be less than the width W5 of the gap 5.

[0174] Please refer to Figure 1 , the sacrificial layer 11 can be removed by, for example, a fourth etching process (e.g., a dry etching process) for the portions not covered by the spacers 2. That is, a fourth etching process can be performed on the upper surface 111 of the sacrificial layer 11. Thus, the sacrificial layer 11 can be thinned and can include a plurality of protrusions 113 protruding from the upper surface 111 of the sacrificial layer 11. The protrusions 113 and the upper surface 111 of the sacrificial layer 11 can jointly define a plurality of recesses 114.

[0175] At the same time, the first side surface 21 of the spacer 2 can have a height h21, and the second side surface 22 of the spacer 2 can have a height h22. Figure 1 The height h21 of the first side surface 21 of Figure 19 can be equal to or less than the height h21' of the first side surface 21 of Figure 1The height h22 of the second side surface 22 can be equal to or less than Figure 19 the height h22' of the second side surface 22. As Figure 1 shown, a ratio of the height h22 of the second side surface 22 to the height h21 of the first side surface 21 can be greater than 90%. The ratio of the height h22 of the second side surface 22 to the height h21 of the first side surface 21 can be greater than 97%. As Figure 1 shown, the ratio of the height h22 of the second side surface 22 to the height h21 of the first side surface 21 can be approximately equal to 100%. Therefore, the height h22 of the second side surface 22 can be approximately equal to the height h21 of the first side surface 21.

[0176] Please refer to Figure 2 , a fifth etching process (e.g., a dry etching process) can be further performed. During the fifth etching process (e.g., the dry etching process), the spacer 2 can be configured as a mask structure. Therefore, portions of the sacrificial layer 11 and the base material 10 not covered by the spacer 2 can be removed. A plurality of openings 103 (or trenches or holes) can be formed in the base material 10. After the fifth etching process (e.g., the dry etching process), since the spacer 2 is configured as a mask structure during the formation of the openings 103 (or trenches or holes), the base material 10 can define a plurality of openings 103 (or trenches or holes) corresponding to the spacer 2. In this way, by using the spacer 2 as a mask structure, the openings 103 (or trenches or holes) are formed in the base material 10. Each opening 103 can have a uniform width W1. One of the openings 103 can have a uniform width W1 along a vertical direction. That is, in a cross-sectional view, a first surface of a first sidewall of the opening 103 can be substantially parallel to a second surface of a second sidewall of the opening 103 opposite to the first sidewall. Both the first surface and the second surface are flat surfaces. There can be no bowing in the opening 103.

[0177] Please refer to Figure 20 , the sacrificial layer 11 and the spacer 2 can be removed to form the openings 103 in the base material 10.

[0178] Figures 21 to 26 Illustrates a method for preparing a plurality of openings 103a in a base material 10 according to some embodiments of the present disclosure. Figures 21 to 26 Illustrates a method for preparing a plurality of spacers 2a in a base material 10 according to some embodiments of the present disclosure.

[0179] Please refer to Figure 21 , a base material 10 can be provided. Figure 21 The base material 10 can be the same as Figure 4is the same as or similar to the base material 10. In some embodiments, the body 14 and the intermediate layer 12 may be formed or disposed below the base material 10. A sacrificial layer 11 may be formed or disposed on the base material 10. Figure 21 The body 14, the intermediate layer 12, and the sacrificial layer 11 of Figure 4 may be the same as or similar to the body 14, the intermediate layer 12, and the sacrificial layer 11 of

[0180] Then, a plurality of units 3a may be formed or disposed on the base material 10. In some embodiments, the unit 3 may be formed or disposed on the upper surface 111 of the sacrificial layer 11 and spaced apart from each other by a gap 35. Each unit 3a may include a lower layer 30a and a hard mask 32a on the lower layer 30a. Each unit 3 may have a side surface 33 and an upper surface 31.

[0181] Then, a covering layer 4a may be formed to cover the upper surface 111 of the unit 3a and the sacrificial layer 11. The covering layer 4a may include a plurality of first portions 41a, a plurality of second portions 42a, and a plurality of third portions 43a. The first portion 41a may be disposed on the upper surface 31 of the unit 3a. The second portion 42a may be disposed on the side surface 33 of the unit 3a. The third portion 43a may be disposed on the upper surface 111 of the sacrificial layer 11 and may connect the second portion 42a.

[0182] In some embodiments, a width of the lower layer 30a may be substantially equal to a thickness of the covering layer 4a. A gap between the second portions 42a of the covering layer 4a on two adjacent units 3a may be substantially equal to the width of the lower layer 30a.

[0183] Then, an upper material 6 may be formed or disposed to cover the covering layer 4. The upper material 6 may extend into the gap 35 between the units 3a. A material of the upper material 6 may be the same as or different from the material of the lower layer 30a.

[0184] Please refer to Figure 22 , a portion of the upper material 6 may be removed by, for example, a first etching process (e.g., dry etching) to retain the remaining portion 60 of the upper material 6 disposed in the gap 35 between the units 3a. At the same time, the first portion 41a of the covering layer 4a is exposed from the remaining portion 60 of the upper material 6.

[0185] Please refer to Figure 23, a first portion 41a of the cover layer 4a and a portion of the hard mask 32a covering the same can be removed by, for example, a second etching process (e.g., dry etching). In some embodiments, the hard mask 32a may not be completely removed. A remaining portion of the hard mask 32a may be retained. An upper surface 421 of a second portion 42a of the cover layer 4a may be a curved surface. An upper surface 321 of the remaining portion of the hard mask 32a may be a curved surface. Thus, the hard mask 32a may have a curved upper surface 321. The upper surface 421 of the second portion 42a of the cover layer 4a and the upper surface of the remaining portion of the hard mask 32a may be continuous, i.e., they may be part of the same curved surface.

[0186] Please refer to Figure 24 , the remaining portion 60 of the upper material 6 can be removed by, for example, stripping. Thus, the upper material 6 and the first portion 41a of the cover layer 4a can be completely removed. Then, a third etching process (e.g., dry etching) can be performed. An etching gas 7 can be applied. The etching gas 7 may include a fluorocarbon, such as C 4 F 6 and C 4 F 8 . The etching gas 7 may include a first portion 71, a second portion 72, and a third portion 73. The first portion 71 of the etching gas 7 can be used to remove an upper portion of the second portion 42a of the cover layer 4a. The second portion 72 of the etching gas 7 can be used to remove the third portion 43a of the cover layer 4a. The third portion 73 of the etching gas 7 can be used to remove the remaining portion of the hard mask 32a. Thus, the hard mask 32a and the third portion 43a of the cover layer 4a can be completely removed by using the etching gas 7.

[0187] Please refer to Figure 25, the etch gas 7 can be continuously applied. That is, the third etching process is continued. After removing the hard mask 32a, the third portion 73 of the etch gas 7 can contact the lower layer 30a to remove the upper portion of the lower layer 30a, thereby forming the remaining portion 30a' of the lower layer 30a. The first portion 71 of the etch gas 7 can continue to remove the upper portion of the second portion 42a of the cover layer 4a to form a plurality of spacer 2a. That is, the remaining portion of the second portion 42a of the cover layer 4a becomes the spacer 2a. During the third etching, since the etch gas 7 has a high etch selectivity for the lower layer 30a, the third portion 73 of the etch gas 7 and the upper portion of the lower layer 30 can react to form a polymer 8 to protect the spacer 2a. That is to say, during the third etching process, the by-product of the lower layer 30a (i.e., the polymer 8) can cover the upper surface 23 of the spacer 2a (i.e., the upper surface 421 of the second portion 42a of the cover layer 4a) to prevent the first portion 71 of the etch gas 7 from further etching the spacer 2a. Therefore, during the third etching process, the by-product of the lower layer 30a (i.e., the polymer 8) can protect the upper profile of the spacer 2a.

[0188] Please refer to Figure 26 , the remaining portion 30a' of the lower layer 30a can be removed to form separate spacer 2a. Figure 26 The spacer 2a can be the same as or similar to Figure 4 the spacer 2a. Each spacer 2a can have a first side surface 21 and a second side surface 22 opposite to the first side surface 21. The second side surface 22 can be substantially parallel to the first side surface 21. Each spacer 2a can also have an upper surface 23 to connect the first side surface 21 and the second side surface 22. The upper surface 23 can be a flat surface and can be perpendicular to the first side surface 21 and the second side surface 22. Each spacer 2a can present a rectangular shape in a cross-sectional view.

[0189] Please refer to Figure 4 , the portions of the sacrificial layer 11 not covered by the spacer 2a can be removed by, for example, a fourth etching process (e.g., a dry etching process). Therefore, the sacrificial layer 11 can be thinned and can include a plurality of protrusions 113 protruding from the upper surface 111 of the sacrificial layer 11. The protrusions 113 and the upper surface 111 of the sacrificial layer 11 can jointly define a plurality of recesses 114.

[0190] Please refer to Figure 5, a fifth etching process (e.g., a dry etching process) can be further performed. During the fifth etching process (e.g., dry etching process), the spacer 2a can be configured as a mask structure. Thus, the sacrificial layer 11 and the portions of the base material 10 not covered by the spacer 2a can be removed. A plurality of openings 103a (or trenches or holes) can be formed in the base material 10. After the fifth etching process (e.g., dry etching process), since the spacer 2a is configured as a mask structure during the formation of the openings 103a (or trenches or holes), the base material 10 can define a plurality of openings 103a (or trenches or holes) corresponding to the spacer 2a. In some embodiments, the sacrificial layer 11 and the spacer 2a can be removed.

[0191] Figure 27 is a process schematic diagram illustrating a method 800 for preparing a plurality of spacers according to some embodiments of the present disclosure.

[0192] In some embodiments, the preparation method 800 may include a step S801 of providing a base material. For example, as Figure 11 shown, a base material 10 is provided.

[0193] In some embodiments, the preparation method 800 may include a step S802 of forming a plurality of units above the base material, wherein each of the plurality of units includes a lower layer and a hard mask located on the lower layer. For example, as Figure 12 shown, a plurality of units 3 are formed on the base material 10. Each unit 3 includes a lower layer 30 and a hard mask 32 located on the lower layer 30.

[0194] In some embodiments, the preparation method 800 may include a step S803 of forming a covering layer to cover the units, wherein the covering layer includes a plurality of first portions disposed on the upper surfaces of the plurality of units, a plurality of second portions disposed on the side surfaces of the plurality of units, and a plurality of third portions connecting the plurality of second portions. For example, as Figure 13 shown, a covering layer 4 is formed to cover the units 3. The covering layer 4 includes a plurality of first portions 41 disposed on the upper surface 31 of the unit 3, a plurality of second portions 42 disposed on the side surface 33 of the unit 3, and a plurality of third portions 43 connecting the second portions 42.

[0195] In some embodiments, the preparation method 800 may include a step S804 of forming an upper material to cover the covering layer. For example, as Figure 13 shown, an upper material 6 is formed to cover the covering layer 4.

[0196] In some embodiments, the preparation method 800 may include a step S805 of removing the upper material and the plurality of first portions of the covering layer. For example, asFigure 16 As shown, the upper material 6 and the first part 41 of the cover layer 4 are removed.

[0197] In some embodiments, the preparation method 800 may include a step S806 of removing the hard mask and the plurality of third parts of the cover layer. For example, as Figure 17 shown, the hard mask 32 and the third part 43 of the cover layer 4 are removed.

[0198] In some embodiments, the preparation method 800 may include a step S807 of removing the lower layer to form a plurality of spacer elements, wherein each of the plurality of spacer elements has a first side surface and a second side surface opposite to the first side surface, the second side surface is substantially parallel to the first side surface, and a ratio of a height of the second side surface to a height of the first side surface is greater than 90%. For example, as Figure 19 shown, the lower layer 30' is removed to form a plurality of spacer elements 2. Each spacer element 2 has a first side surface 21 and a second side surface 22 opposite to the first side surface 21. The second side surface 22 is substantially parallel to the first side surface 21. A ratio of a height h22' of the second side surface 22 to a height h21' of the first side surface 21 is greater than 90%.

[0199] Figure 28 is a process schematic diagram illustrating a preparation method 900 of a plurality of openings in a base material according to some embodiments of the present disclosure.

[0200] In some embodiments, the preparation method 900 may include a step S901 of providing a base material. For example, as Figure 11 shown, a base material 10 is provided.

[0201] In some embodiments, the preparation method 900 may include a step S902 of forming a plurality of spacer elements above the base material, wherein each of the plurality of spacer elements has a first side surface and a second side surface opposite to the first side surface, the second side surface is substantially parallel to the first side surface, and a ratio of a height of the second side surface to a height of the first side surface is greater than 90%. For example, as Figure 19 shown, a plurality of spacer elements 2 are formed on the base material 10. Each spacer element 2 has a first side surface 21 and a second side surface 22 opposite to the first side surface 21. The second side surface 22 is substantially parallel to the first side surface 21. A ratio of a height h22' of the second side surface 22 to a height h21' of the first side surface 21 is greater than 90%.

[0202] In some embodiments, the preparation method 900 may include a step S903 of forming a plurality of openings in the base material by using the plurality of spacers as a plurality of mask structures. For example, as Figure 2 shown, by using the spacer 2 as a plurality of mask structures, an opening 103 is formed in the base material 10.

[0203] Although the present disclosure and its advantages have been described in detail, it should be understood that various changes, substitutions, and alternatives can be made without departing from the spirit and scope of the present disclosure as defined by the claims. For example, many of the above processes can be implemented in different ways, and many of the above processes can be replaced by other processes or combinations thereof.

[0204] Furthermore, the scope of the present application is not limited to the specific embodiments of the processes, machines, manufactures, compositions of matter, means, methods, and steps described in the specification. Those skilled in the art can understand from the disclosure of the present disclosure that existing or future developed processes, machines, manufactures, compositions of matter, means, methods, or steps that have the same function or achieve substantially the same result as the corresponding embodiments described herein can be used according to the present disclosure. Accordingly, such processes, machines, manufactures, compositions of matter, means, methods, or steps are included in the claims of the present application.

Claims

1. An assembly structure comprising a plurality of spacers, comprising:

1. Basic materials; as well as A plurality of spacers are arranged in the base material, wherein each of the plurality of spacers has a first side surface and a second side surface opposite to the first side surface, the second side surface is substantially parallel to the first side surface, and a ratio of a height of the second side surface to a height of the first side surface is greater than 90%. 2 . The assembly structure as claimed in claim 1 , wherein the ratio of the height of the second side surface to the height of the first side surface is greater than or equal to 97%. 3 . The assembly structure as claimed in claim 1 , wherein each of the plurality of spacers further comprises an upper surface connecting the first side surface and the second side surface. 4 . The assembly structure as claimed in claim 3 , wherein the upper surface of each of the plurality of spacers comprises a curved surface. 5 . The assembly structure as claimed in claim 3 , wherein the upper surface of each of the plurality of spacers is perpendicular to the first side surface and the second side surface. 6 . The assembly structure as claimed in claim 1 , wherein each of the plurality of spacers has a width, a gap is formed between two adjacent spacers, and the width of the spacer is substantially equal to or different from a width of the gap.

7. The assembly structure as described in claim 1 further includes a sacrificial layer disposed between the base material and the plurality of spacers, wherein the sacrificial layer includes a plurality of protrusions protruding from an upper surface of the sacrificial layer, each of the plurality of spacers is disposed on each of the plurality of protrusions, and each of the plurality of protrusions is substantially conformal with each of the plurality of spacers.

8. The assembly structure as claimed in claim 1, wherein the base material defines a plurality of openings corresponding to the plurality of gaps. 9 . The assembly structure of claim 8 , wherein during the formation of the plurality of openings, the plurality of spacers are configured as a mask structure.

10. The assembly structure of claim 8, wherein each of the plurality of openings has a uniform width.

11. The assembly structure as claimed in claim 8, wherein each of the plurality of openings has a non-uniform width, each of the plurality of openings includes a first portion having a maximum width, and all first portions of the plurality of openings are disposed on the same plane.

12. A method for preparing a plurality of interstitials, comprising: Providing a basic material; forming a plurality of cells over the base material, wherein each of the plurality of cells comprises an underlying layer and a hard mask on the underlying layer; forming a covering layer to cover the plurality of units, wherein the covering layer comprises a plurality of first portions disposed on respective upper surfaces of the plurality of units, a plurality of second portions disposed on respective side surfaces of the plurality of units, and a plurality of third portions connecting the plurality of second portions; forming an upper material to cover the cover layer; removing the upper material and the plurality of first portions of the cover layer; removing the hard mask and the third portions of the cover layer; as well as The lower layer is removed to form a plurality of spacers, wherein each of the plurality of spacers has a first side surface and a second side surface opposite to the first side surface, the second side surface is substantially parallel to the first side surface, and a ratio of a height of the second side surface to a height of the first side surface is greater than 90%.

13. The preparation method according to claim 12, further comprising: A sacrificial layer is formed on the base material, wherein the plurality of units are formed on the sacrificial layer, and the plurality of third portions of the cover layer are disposed on the sacrificial layer. The preparation method as claimed in claim 12 , wherein the upper material is the same as a material of the lower layer.

15. The method of claim 12, wherein removing the upper material and the first portions of the cover layer comprises: removing a portion of the upper material to leave a remaining portion of the upper material disposed in a gap between the plurality of cells, wherein the plurality of first portions of the cover layer are exposed to the remaining portion of the upper material; as well as The first portions of the cover layer and a portion of the hard mask are removed. The manufacturing method as claimed in claim 15 , wherein the hard mask has a curved upper surface. 17 . The preparation method as claimed in claim 15 , wherein an upper surface of the remaining portion of the upper material is substantially flush with an upper surface of the lower layer.

18. The method of claim 12, wherein removing the hard mask and the plurality of third portions comprises: removing the hard mask and the third portions of the capping layer by using an etching gas; as well as An upper portion of the lower layer and an upper portion of each of the plurality of second portions of the capping layer are removed to form a remaining portion of the lower layer and the plurality of spacers, wherein the etching gas reacts with the upper portion of the lower layer to form a polymer to protect the plurality of spacers.

19. The method of claim 18, wherein removing the lower layer to form the plurality of spacers comprises: The lower layer is stripped away to leave the plurality of spacers standing above the base material. 20 . The preparation method according to claim 18 , wherein an upper surface of the remaining portion of the lower layer and upper surfaces of the plurality of spacers are substantially coplanar with each other.

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