Semiconductor manufacturing apparatus and semiconductor manufacturing method

Abstract

The invention relates to a semiconductor manufacturing apparatus and a semiconductor manufacturing method. The present invention suppresses a decrease in performance of a semiconductor device associated with wire bonding. A semiconductor manufacturing apparatus according to the technology disclosed in the present specification is used for conducting wire bonding for forming an electrical circuit of a semiconductor device, and comprises: a capillary from which a metal wire can be extended; the US welding head is used for vibrating the capillary tube; a fixing part for fixing the semiconductor device; and a heating unit for heating only a part of the semiconductor device when the tip of the molten metal wire is brought into contact with the semiconductor device fixed to the fixing unit.

Description

Technical Field

[0001] The technology disclosed in this specification relates to a manufacturing technology of a semiconductor device. Background Art

[0002] When manufacturing a semiconductor device, wire bonding is performed between a semiconductor element and a lead frame. Wire bonding uses gold, silver, copper, or the like as a material, and requires pressure, ultrasonic waves, or heat for bonding (for example, see Patent Document 1).

[0003] Patent Document 1: Japanese Patent Application Laid-Open No. 06-163626

[0004] Since the lead frame is made of copper, it is oxidized by heating. Therefore, if the lead frame is also heated during wire bonding, the performance of the manufactured semiconductor device may be degraded (for example, poor adhesion of the insulating sheet). Summary of the invention

[0005] The technology disclosed in this specification has been proposed in view of the above-described problems, and is a technology for suppressing the performance degradation of a semiconductor device associated with wire bonding.

[0006] The first scheme of the technology disclosed in this specification, namely, a semiconductor manufacturing device is used for wire bonding to form an electrical circuit of a semiconductor device, and the semiconductor manufacturing device has: a capillary from which a metal wire can extend; a US welding head, which is used to vibrate the capillary; a fixing part, which is used to fix the semiconductor device; and a heating part, which is used to heat only a part of the semiconductor device when the front end of the molten metal wire is brought into contact with the semiconductor device fixed to the fixing part.

[0007] Effects of the Invention

[0008] According to at least the first aspect of the technology disclosed in this specification, when bonding a metal wire to a semiconductor device, only a portion of the semiconductor device can be heated, thereby suppressing degradation of the semiconductor device performance associated with bonding of the metal wire.

[0009] In addition, the objects, features, aspects, and advantages related to the technology disclosed in this specification will become more apparent from the following detailed description and drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0010] Figure 1 It is a front view showing an example of the structure of an operating unit of a wire bonding device.

[0011] Figure 2 It is a side view showing an example of the structure of an operating unit of a wire bonding device.

[0012] Figure 3 It is a diagram showing an example of a wire bonding process.

[0013] Figure 4 It is a diagram showing an example of a wire bonding process according to the embodiment.

[0014] Figure 5 : is a flowchart showing an example of a wire bonding process according to the embodiment.

[0015] Figure 6 : is a flowchart showing an example of a wire bonding process according to the embodiment.

[0016] Figure 7 : is a flowchart showing an example of a wire bonding process according to the embodiment.

[0017] Figure 8 : is a flowchart showing an example of a wire bonding process according to the embodiment. DETAILED DESCRIPTION

[0018] Below, while referring to the attached Figure 1 In the following embodiments, detailed features and the like are shown for the purpose of explaining the technology, but these are examples and not all of them are essential features for implementing the embodiments.

[0019] In addition, the drawings are schematically shown, and for the convenience of explanation, the structure is appropriately omitted or simplified in the drawings. In addition, the size and position of the structures shown in different drawings are not necessarily accurately recorded, and can be changed appropriately. In addition, in drawings such as top views that are not cross-sectional views, shadows are sometimes marked to make the content of the embodiment easier to understand.

[0020] In the following description, the same components are denoted by the same reference numerals and are illustrated, and their names and functions are also the same, so in order to avoid duplication, detailed description thereof may be omitted.

[0021] In addition, in the description described in this specification, when it is described that a certain component is “equipped with,” “includes,” or “has,” this does not mean an exclusive expression excluding the existence of other components unless otherwise specified.

[0022] In addition, in the descriptions recorded in this specification, even if ordinal numbers such as "1st" or "2nd" are sometimes used, these terms are used only for convenience to make the contents of the implementation method easier to understand, and the contents of the implementation method are not limited to the order that may be represented by these ordinal numbers.

[0023] In addition, in the descriptions recorded in this specification, even if terms such as "up", "down", "left", "right", "side", "bottom", "front" or "back" are sometimes used to indicate specific positions or directions, these terms are only used for convenience in order to facilitate understanding of the contents of the implementation method and have nothing to do with the position or direction when the implementation method is actually implemented.

[0024] In addition, in the descriptions described in this specification, when it is described as "the upper surface of..." or "the lower surface of...", etc., it includes not only the upper surface or the lower surface of the target structural element itself, but also the state where other structural elements are formed on the upper surface or the lower surface of the target structural element. That is, for example, when it is described as "B is provided on the upper surface of A", it does not prevent the existence of another structural element "C" between A and B.

[0025] First, a wire bonding process for performing wire bonding to form an electric circuit of a semiconductor device will be described.

[0026] Figure 1 FIG. 1 is a front view showing an example of the structure of the operating unit of the wire bonding device. Figure 1 As shown in the example, a metal wire 3 extends from the front end of a capillary 2 attached to the front end of a US horn (ultrasonic horn) 1, and an ignition rod 5 is provided facing the metal wire 3. In addition, a non-contact heat source 12 is provided for heating the metal wire 3 and its wiring object. The metal wire 3 is a wire formed of a metal with low resistance, such as gold, silver, copper or aluminum.

[0027] Figure 2 FIG. 1 is a side view showing an example of the structure of the operating unit of the wire bonding device. Figure 2 As illustrated, the capillary 2 is attached so as to penetrate the front end of the US welding head 1 , and the FAB 4 described later is formed at the front end of the metal wire 3 extending from the front end of the capillary 2 .

[0028] The initial operation (first process) of the wire bonding process is to form the FAB 4 with respect to the metal wire 3 extending from the front end of the capillary 2. This is called the ignition operation. Figure 1 As shown, by discharging from the ignition rod 5 toward the tip of the metal wire 3 , the tip of the metal wire 3 is melted, and the FAB 4 is formed.

[0029] The second process is an operation of bonding the FAB 4 to the bonding surface such as the electrode of the semiconductor element 6. Figure 3 It is a diagram showing an example of a wire bonding process.

[0030] In the second process, Figure 3 As shown in the example, the entire copper lead frame 8 is heated by the heating plate fixture 90. Then, the FAB 4 is pressed against the semiconductor element 6 bonded to the lead frame 8 by the die bonding material 7, and further, US (ultrasonic wave) is applied by the up-and-down movement of the capillary 2 in the Z direction and the reciprocating movement in the XY direction to perform bonding.

[0031] Here, the lead frame 8 is formed by processing a metal plate. In addition, the lead frame 8 is not only provided in the range overlapping with the semiconductor element 6 or the bonding portion of the metal wire 3 when viewed from above, but also extends to other ranges, for example, in a lattice shape or a strip shape when viewed from above. The heating plate fixture 90 heats the entire lower surface of the lead frame 8 that is provided in an extended manner when viewed from above.

[0032] In the third process, if Figure 3 As illustrated, after the FAB 4 is bonded to the semiconductor element 6 , the US bonding head 1 is shaped so as to form the metal wire 3 into a desired trajectory while repeatedly performing minute movements in the Z direction and the XY direction.

[0033] The fourth process is to perform bonding on the other bonded surface to form an electrical bond. Figure 3 As shown in the example, the metal wire 3 that has been shaped in the third process is pressed against the bonding surface of the lead frame 8, and US (ultrasonic wave) is applied to perform bonding. The lead frame 8 bonded to the metal wire 3 may be the same lead frame 8 as the lead frame 8 bonded to the semiconductor element 6 via the die bonding bonding material 7, or may be a lead frame 8 that is not electrically connected.

[0034] The above process is an outline of the wire bonding process. In the wire bonding process, the heating plate jig 90 and the non-contact heat source 12 must always heat the wiring target of the metal wire 3 (ie, the semiconductor element 6).

[0035] Generally, in the manufacture of semiconductor devices, there are a plurality of metal wires 3 that are wired through the above four processes. Figure 3 The surface to be bonded is not the semiconductor element 6. Figure 3 Although the upper surface of the lead frame 8 is shown, the upper surface of the semiconductor element 6 joined to the lead frame 8 via a joining material (not shown here) may be used.

[0036] In the manufacture of semiconductor devices, wiring is formed by the above-mentioned four processes. Wire bonding uses metal wires for bonding, for example. The wiring object can also be a small semiconductor element 6 with a conductive lead frame, a rectangular shape, and a short side less than or equal to 3.5 mm. The size of the semiconductor element 6 can be, for example, a longitudinal dimension less than or equal to 3.5 mm, a lateral dimension less than or equal to 7 mm, and a thickness less than or equal to 0.5 mm. The semiconductor element 6 can be, for example, an IC element. In the case where the semiconductor element 6 is an IC element, it is sufficient to set the wire diameter to less than or equal to φ50.

[0037] <First embodiment>

[0038] Hereinafter, a semiconductor manufacturing apparatus and a semiconductor manufacturing method according to the present embodiment will be described.

[0039] <About the structure of semiconductor manufacturing equipment>

[0040] In the present embodiment, a method will be described in which heat required for the wiring operation of the metal wire 3 is applied to a wiring target using a wire bonding machine as a semiconductor manufacturing apparatus.

[0041] Figure 4 is a diagram showing an example of a wire bonding process according to the present embodiment. Figure 5 : is a flowchart showing an example of a wire bonding process according to the present embodiment.

[0042] The lead frame 8 has a complex shape corresponding to the final product form. In this embodiment, the shape of the lead frame 8 is pre-set in the wire bonding equipment. Specifically, Figure 4 As shown in the example, a portion of the heating plate fixture is raised (protruded upward) to match the shape of the lead frame 8. Figure 4 , the heating plate fixture 9 after the rise and the heating plate fixture 10 not rising are shown, but since the position of the rising heating plate fixture can be changed according to the shape of the lead frame 8, the position of the heating plate fixture 9 is not limited to Figure 4 This rise is achieved by raising and lowering a part of the heating plate fixture by a lifting drive mechanism (not shown).

[0043] Then, the lead frame 8 is transported to the action part of the wire bonding equipment ( Figure 5 Then, the heating plate fixture 9 in the raised position heats the lead frame 8 ( Figure 5 Step ST02). At this time, the heating plate fixture 10 of the predetermined position where the lead frame 8 is not configured waits at the lower position to prevent unnecessary heating. The heating plate fixture 10 in the waiting state may be heated or not.

[0044] The lead frame 8 is also arranged in a range that does not overlap with the joint of the semiconductor element 6 or the metal wire 3 when viewed from above, but the heating plate clamp 9 in the raised position is arranged in a range that overlaps with the joint of the semiconductor element 6 or the metal wire 3, and the heating of the lead frame 8 achieved by the heating plate clamp 9 is local.

[0045] Together with heating, the lead frame 8 is adsorbed and fixed by the adsorption hole 11 with a dry air negative pressure ( Figure 5 Step ST03). Dry air is dry air, which has an outstanding advantage in terms of supply cost.

[0046] Then, by Figure 2 The wire bonding process including the first process, the second process, the third process and the fourth process is performed to wire the metal wire 3 ( Figure 5 When the front end (FAB4) of the molten metal wire 3 is brought into contact with the upper surface of the semiconductor element 6 or the lead frame 8, only a portion of the lead frame 8 (for example, only the range overlapping with the bonding portion of the metal wire 3 when viewed from above) is heated by the heating plate fixture 9. Then, the lead frame 8 is transported outside the device ( Figure 5 Step ST05).

[0047] According to the above structure, the lead frame 8 can be locally heated by the raised heating plate fixture 9, thereby suppressing oxidation of the lead frame 8. This can suppress degradation of the performance of the manufactured semiconductor device (for example, poor adhesion of the insulating sheet), thereby improving productivity.

[0048] <Second embodiment>

[0049] In the following description, the same components as those described in the above-described embodiment are denoted by the same reference numerals and illustrated, and their detailed description is appropriately omitted.

[0050] In the present embodiment, a method will be described in which heat required for the wiring operation of the metal wire 3 is applied to a wiring target using a wire bonding machine as a semiconductor manufacturing apparatus. Figure 6 : is a flowchart showing an example of a wire bonding process according to the present embodiment.

[0051] The lead frame 8 has a complex shape corresponding to the final product form. In this embodiment, the shape of the lead frame 8 is pre-set in the wire bonding equipment. Specifically, Figure 4 As illustrated, a part of the heating plate jig is raised in accordance with the shape of the lead frame 8 .

[0052] Then, the lead frame 8 is transported to the action part of the wire bonding equipment ( Figure 6 Then, the heating plate fixture 9 in the raised position heats the lead frame 8 ( Figure 6 Step ST02). At this time, the heating plate fixture 10 of the predetermined position where the lead frame 8 is not configured waits at the lower position to prevent unnecessary heating. The heating plate fixture 10 in the waiting state may be heated or not.

[0053] The lead frame 8 is also arranged in a range that does not overlap with the joint of the semiconductor element 6 or the metal wire 3 when viewed from above, but the heating plate clamp 9 in the raised position is arranged in a range that overlaps with the joint of the semiconductor element 6 or the metal wire 3, and the heating of the lead frame 8 achieved by the heating plate clamp 9 is local.

[0054] Together with heating, the lead frame 8 is adsorbed and fixed by nitrogen negative pressure through the adsorption hole 11 ( Figure 6 Step ST13). Nitrogen has an outstanding advantage in being able to suppress oxidation caused by heating.

[0055] Then, by Figure 2 The wire bonding process including the first process, the second process, the third process and the fourth process is performed to wire the metal wire 3 ( Figure 6 When the front end (FAB4) of the molten metal wire 3 is brought into contact with the upper surface of the semiconductor element 6 or the lead frame 8, only a portion of the lead frame 8 is heated by the heating plate fixture 9. Then, the lead frame 8 is transported outside the device ( Figure 6 Step ST05).

[0056] According to the above structure, the lead frame 8 can be locally heated by the raised heating plate fixture 9, thereby suppressing oxidation of the lead frame 8. This can suppress degradation of the performance of the manufactured semiconductor device (for example, poor adhesion of the insulating sheet), thereby improving productivity.

[0057] <Third embodiment>

[0058] In the following description, the same components as those described in the above-described embodiment are denoted by the same reference numerals and illustrated, and their detailed description is appropriately omitted.

[0059] <About the structure of semiconductor manufacturing equipment>

[0060] In the present embodiment, a method will be described in which heat required for the wiring operation of the metal wire 3 is applied to a wiring target using a wire bonding machine as a semiconductor manufacturing apparatus. Figure 7 : is a flowchart showing an example of a wire bonding process according to the present embodiment.

[0061] The lead frame 8 has a complex shape corresponding to the final product form. In this embodiment, the shape of the lead frame 8 is pre-set in the wire bonding equipment. Specifically, Figure 4 As illustrated, a part of the heating plate jig is raised in accordance with the shape of the lead frame 8 .

[0062] Then, the lead frame 8 is transported to the action part of the wire bonding equipment ( Figure 7 Then, the heating plate fixture 9 in the raised position heats the lead frame 8 ( Figure 7 Step ST02). At this time, the heating plate fixture 10 of the predetermined position where the lead frame 8 is not configured waits at the lower position to prevent unnecessary heating. The heating plate fixture 10 in the waiting state may be heated or not.

[0063] The lead frame 8 is also arranged in a range that does not overlap with the joint of the semiconductor element 6 or the metal wire 3 when viewed from above, but the heating plate clamp 9 in the raised position is arranged in a range that overlaps with the joint of the semiconductor element 6 or the metal wire 3, and the heating of the lead frame 8 achieved by the heating plate clamp 9 is local.

[0064] In addition, at this time, in order to improve the heating capacity, the wiring object (that is, the semiconductor element 6) is heated by a non-contact heat source 12 such as a heater ( Figure 7 Step ST20). The non-contact heat source 12 can realize the change of the layout in the device, and the design freedom is high. The non-contact heat source 12 heats the wiring object (i.e., the semiconductor element 6) so as to shorten the time until the temperature rises to the appropriate temperature for joining the metal wire 3.

[0065] In addition, the lead frame 8 is adsorbed and fixed by the adsorption hole 11 with a dry air negative pressure ( Figure 7 Step ST03). Dry air has an outstanding advantage in terms of supply cost.

[0066] Then, by Figure 2 The wire bonding process including the first process, the second process, the third process and the fourth process is performed to wire the metal wire 3 ( Figure 7 When the front end (FAB4) of the molten metal wire 3 is brought into contact with the upper surface of the semiconductor element 6 or the lead frame 8, only a portion of the lead frame 8 is heated by the heating plate fixture 9. Then, the lead frame 8 is transported outside the device ( Figure 7 Step ST05).

[0067] According to the above structure, the lead frame 8 can be locally heated by the heating plate fixture 9 in the raised position, so that oxidation of the lead frame 8 can be suppressed. In addition, the heating time can be shortened by heating by the non-contact heat source 12. As a result, the performance degradation of the manufactured semiconductor device (for example, poor adhesion of the insulating sheet) can be suppressed, and the productivity can be improved.

[0068] <Fourth embodiment>

[0069] In the following description, the same components as those described in the above-described embodiment are denoted by the same reference numerals and illustrated, and their detailed description is appropriately omitted.

[0070] <About the structure of semiconductor manufacturing equipment>

[0071] In the present embodiment, a method will be described in which heat required for the wiring operation of the metal wire 3 is applied to a wiring target using a wire bonding machine as a semiconductor manufacturing apparatus. Figure 8 : is a flowchart showing an example of a wire bonding process according to the present embodiment.

[0072] The lead frame 8 has a complex shape corresponding to the final product form. In this embodiment, the shape of the lead frame 8 is pre-set in the wire bonding equipment. Specifically, Figure 4 As illustrated, a part of the heating plate jig is raised in accordance with the shape of the lead frame 8 .

[0073] Then, the lead frame 8 is transported to the action part of the wire bonding equipment ( Figure 8 Then, the heating plate fixture 9 in the raised position heats the lead frame 8 ( Figure 8 Step ST02). At this time, the heating plate fixture 10 of the predetermined position where the lead frame 8 is not configured waits at the lower position to prevent unnecessary heating. The heating plate fixture 10 in the waiting state may be heated or not.

[0074] The lead frame 8 is also arranged in a range that does not overlap with the joint of the semiconductor element 6 or the metal wire 3 when viewed from above, but the heating plate clamp 9 in the raised position is arranged in a range that overlaps with the joint of the semiconductor element 6 or the metal wire 3, and the heating of the lead frame 8 achieved by the heating plate clamp 9 is local.

[0075] In addition, at this time, in order to improve the heating capacity, the wiring object (that is, the semiconductor element 6) is heated by a non-contact heat source 12 such as a heater ( Figure 8By heating the wiring object (ie, the semiconductor element 6) with the non-contact heat source 12, the time required for the wiring object (ie, the semiconductor element 6) to rise to a suitable temperature for bonding the metal wire 3 is shortened.

[0076] In addition, the lead frame 8 is adsorbed and fixed by nitrogen negative pressure through the adsorption holes 11 at the same time as heating ( Figure 8 Step ST13). Nitrogen has an outstanding advantage in being able to suppress oxidation caused by heating.

[0077] Then, by Figure 2 The wire bonding process including the first process, the second process, the third process and the fourth process is performed to wire the metal wire 3 ( Figure 8 When the front end (FAB4) of the molten metal wire 3 is brought into contact with the upper surface of the semiconductor element 6 or the lead frame 8, only a portion of the lead frame 8 is heated by the heating plate fixture 9. Then, the lead frame 8 is transported outside the device ( Figure 8 Step ST05).

[0078] According to the above structure, the lead frame 8 can be locally heated by the heating plate fixture 9 in the raised position, so that oxidation of the lead frame 8 can be suppressed. In addition, heating is performed by the non-contact heat source 12, thereby shortening the heating time. As a result, the performance degradation of the manufactured semiconductor device (for example, poor adhesion of the insulating sheet) can be suppressed, and the productivity can be improved.

[0079] <Effects of the above-described embodiments>

[0080] Next, examples of the effects produced by the multiple embodiments described above are shown. In addition, in the following description, the effects are recorded based on the specific structures illustrated in the multiple embodiments described above, but they can also be replaced with other specific structures illustrated in this specification within the scope of producing the same effects. That is, below, for convenience, sometimes only one of the related specific structures is representatively recorded, but the representatively recorded specific structure can also be replaced with other related specific structures.

[0081] In addition, the replacement may be performed across a plurality of embodiments. That is, it may be the case that the same effect is produced by combining the respective structures illustrated in different embodiments.

[0082] According to the above-described embodiment, a semiconductor manufacturing device for wire bonding of an electrical circuit of a semiconductor device includes: a capillary 2 from which a metal wire 3 can be extended; a US welding head 1 for vibrating the capillary 2; a fixing portion for fixing the semiconductor device; and a heating portion for heating only a portion of the semiconductor device when the tip of the molten metal wire 3 is brought into contact with the semiconductor device fixed to the fixing portion. Here, the semiconductor device is, for example, a device having a semiconductor element 6 and a lead frame 8. In addition, the fixing portion corresponds to, for example, an adsorption hole 11, etc. In addition, the heating portion corresponds to, for example, a hot plate fixture 9, etc.

[0083] According to such a structure, when the metal wire 3 is bonded to the semiconductor device, only a part of the semiconductor device can be heated, so that the performance degradation of the semiconductor device accompanying the bonding of the metal wire 3 can be suppressed. Specifically, the degradation (oxidation) of the copper lead frame 8 caused by heating can be suppressed, and the performance degradation of the semiconductor device (for example, poor adhesion of the insulating sheet) can be suppressed. As a result, the productivity of the semiconductor device can be improved, and the profit rate can be improved.

[0084] In addition, even when other structures illustrated in this specification are appropriately added to the above-mentioned structure, that is, when other structures in this specification that are not mentioned as the above-mentioned structure are appropriately added, the same effect can be produced.

[0085] In addition, according to the above-described embodiment, the heating portion has a protruding portion (heating plate fixture 9) that can protrude in accordance with the shape of the semiconductor device. And the heating plate fixture 9 heats only a portion of the semiconductor device. According to such a structure, only the heating plate fixture 9 that rises (protrudes) in advance toward the lead frame 8 in accordance with the shape of the lead frame 8 can effectively heat only the portion of the semiconductor device that becomes the wiring target of the wire bonding.

[0086] In addition, according to the embodiment described above, the position where the tip of the metal wire 3 contacts the semiconductor device when viewed from above is included in the range where the heating plate fixture 9 is located. According to such a structure, the heating plate fixture 9 is configured to include the position where the tip of the metal wire 3 contacts the semiconductor device (for example, the semiconductor element 6) when viewed from above, so that only the portion that becomes the wiring target of the wire bonding can be effectively heated.

[0087] According to the above-described embodiment, the heating portion is the heating plate jig 9, and the fixing portion is the suction holes 11 formed in the heating plate jig 9. With such a structure, the semiconductor device can be appropriately fixed through the suction holes 11 formed in the heating plate jig 9, thereby improving adhesion.

[0088] According to the above-described embodiment, the semiconductor manufacturing apparatus includes the non-contact heat source 12 for heating the semiconductor device without contacting the semiconductor device. According to such a structure, rapid heating can be achieved, and the manufacturing rate of the semiconductor device is improved.

[0089] In addition, according to the above-described embodiment, the semiconductor device has a lead frame 8. And the heating plate fixture 9 locally heats the lead frame 8. According to such a structure, it is possible to suppress the degradation (oxidation) of the copper lead frame 8 caused by heating, and suppress the performance degradation of the semiconductor device (for example, poor adhesion of the insulating sheet). As a result, it is possible to improve the productivity of the semiconductor device and improve the profit margin.

[0090] According to the above-described embodiment, in the semiconductor manufacturing method, the capillary 2 from which the metal wire 3 can be extended is vibrated by the US bonding head 1. Then, the semiconductor device is fixed. Then, the tip of the molten metal wire 3 is brought into contact with the fixed semiconductor device to perform wire bonding. In addition, when performing wire bonding, only a part of the semiconductor device is heated.

[0091] According to such a configuration, when the metal wire 3 is bonded to the semiconductor device, only a portion of the semiconductor device can be heated, and thus, performance degradation of the semiconductor device associated with bonding of the metal wire 3 can be suppressed.

[0092] Furthermore, the order in which each process is performed can be changed without particular limitation.

[0093] In addition, even when other structures illustrated in this specification are appropriately added to the above-mentioned structure, that is, when other structures in this specification that are not mentioned as the above-mentioned structure are appropriately added, the same effect can be produced.

[0094] <Regarding Modifications of the Multiple Embodiments Described Above>

[0095] In the above-described embodiments, although the material, size, shape, relative arrangement relationship or implementation conditions of each component are sometimes described, they are merely examples in all aspects and are not restrictive.

[0096] Therefore, within the technical scope disclosed in this specification, numerous modifications and equivalents not shown in the examples are conceivable, including the case where at least one structural element is modified, added, or omitted, and the case where at least one structural element in at least one embodiment is extracted and combined with structural elements of other embodiments.

[0097] In at least one embodiment described above, when a material name is described without particular designation, the material includes a material containing other additives, such as an alloy, unless there is any contradiction.

[0098] Furthermore, when there is no contradiction, in the above-described embodiments, when it is described that “one” component is included, it may be described that “one or more” of the component is included.

[0099] Furthermore, each structural element in the embodiments described above is a conceptual unit, and within the technical scope disclosed in this specification, it includes a case where one structural element is composed of multiple structures, a case where one structural element corresponds to a part of a certain structure, and a case where multiple structural elements are included in one structure.

[0100] In addition, each component in the above-described embodiment includes structures having other structures or shapes as long as they exhibit the same function.

[0101] In addition, the descriptions in this specification are referenced for all purposes related to the present technology, and no prior art is admitted.

[0102] Hereinafter, each aspect of the present invention will be described collectively as supplementary notes.

[0103] (Note 1)

[0104] A semiconductor manufacturing device for performing wire bonding to form an electric circuit of a semiconductor device, the semiconductor manufacturing device comprising:

[0105] a capillary tube from which a metallic wire can extend;

[0106] A US welding head for vibrating the capillary;

[0107] a fixing portion for fixing the semiconductor device; and

[0108] A heating portion is configured to heat only a portion of the semiconductor device when the tip of the melted metal wire is brought into contact with the semiconductor device fixed to the fixing portion.

[0109] (Note 2)

[0110] A semiconductor manufacturing apparatus according to Supplementary Note 1, wherein:

[0111] The heating portion partially has a protrusion that can protrude in accordance with the shape of the semiconductor device.

[0112] The protrusion heats only a portion of the semiconductor device.

[0113] (Note 3)

[0114] A semiconductor manufacturing apparatus according to Appendix 2, wherein:

[0115] When viewed from above, a position where the tip of the metal wire contacts the semiconductor device is included in a range where the protrusion is located.

[0116] (Note 4)

[0117] The semiconductor manufacturing apparatus according to any one of Supplementary Notes 1 to 3, wherein:

[0118] The heating part is a heating plate,

[0119] The fixing portion is an adsorption hole formed in the heating plate.

[0120] (Note 5)

[0121] A semiconductor manufacturing apparatus according to any one of Supplementary Notes 1 to 4, wherein:

[0122] A non-contact heat source is further provided for heating the semiconductor device without contacting the semiconductor device.

[0123] (Note 6)

[0124] A semiconductor manufacturing apparatus according to any one of Supplementary Notes 1 to 5, wherein:

[0125] The semiconductor device has a lead frame.

[0126] The heating unit locally heats the lead frame.

[0127] (Note 7)

[0128] A semiconductor manufacturing method for performing wire bonding to form an electrical circuit of a semiconductor device,

[0129] In the semiconductor manufacturing method,

[0130] The US welding head vibrates the capillary tube from which the metal wire can be extended.

[0131] fixing the semiconductor device,

[0132] The wire bonding is performed by bringing the tip of the molten metal wire into contact with the fixed semiconductor device,

[0133] During the wire bonding, only a portion of the semiconductor device is heated.

[0134] Description of the label

[0135] 1US welding head, 2 capillary, 3 metal wire, 4FAB, 5 ignition rod, 6 semiconductor element, 7 chip bonding material, 8 lead frame, 9 heating plate fixture, 10 heating plate fixture, 11 adsorption hole, 12 non-contact heat source, 90 heating plate fixture.

Claims

1. A semiconductor manufacturing device for performing wire bonding to form an electric circuit of a semiconductor device, the semiconductor manufacturing device comprising: a capillary tube from which a metal wire can extend; A US welding head for vibrating the capillary; a fixing portion for fixing the semiconductor device; and A heating portion is configured to heat only a portion of the semiconductor device when the tip of the melted metal wire is brought into contact with the semiconductor device fixed to the fixing portion.

2. The semiconductor manufacturing apparatus according to claim 1, wherein: The heating portion partially has a protrusion that can protrude in accordance with the shape of the semiconductor device. The protrusion heats only a portion of the semiconductor device.

3. The semiconductor manufacturing apparatus according to claim 2, wherein: When viewed from above, a position where the tip of the metal wire contacts the semiconductor device is included in a range where the protrusion is located.

4. The semiconductor manufacturing apparatus according to any one of claims 1 to 3, wherein: The heating part is a heating plate, The fixing portion is an adsorption hole formed in the heating plate.

5. The semiconductor manufacturing apparatus according to any one of claims 1 to 4, wherein: A non-contact heat source is further provided for heating the semiconductor device without contacting the semiconductor device.

6. The semiconductor manufacturing apparatus according to any one of claims 1 to 5, wherein: The semiconductor device has a lead frame. The heating unit locally heats the lead frame.

7. A semiconductor manufacturing method for performing wire bonding to form an electrical circuit of a semiconductor device, In the semiconductor manufacturing method, The US welding head vibrates the capillary tube from which the metal wire can be extended. fixing the semiconductor device, The wire bonding is performed by bringing the tip of the molten metal wire into contact with the fixed semiconductor device, During the wire bonding, only a portion of the semiconductor device is heated.

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