SVG fault ride-through capability evaluation method and system based on HIL simulation, medium and equipment

Abstract

The invention discloses an SVG fault ride-through capability evaluation method and system based on HIL simulation, a medium and equipment. The SVG fault ride-through capability evaluation method comprises the steps that photovoltaic power station operation parameters, power grid operation parameters and SVG dynamic reactive power compensation device parameters are acquired; constructing a simulation model according to the operation parameters of the photovoltaic power station, the operation parameters of the power grid and the parameters of the SVG dynamic reactive power compensation device, and connecting the simulation model and SVG controller hardware; according to a preset fault ride-through test method, setting a corresponding test parameter combination for each test condition; according to a preset simulation algorithm and each test parameter combination, controlling the simulation model and SVG controller hardware to perform simulation to obtain a simulation test result; and evaluating the simulation test result to obtain an SVG fault ride-through capability index. Through the method based on controller hardware-in-the-loop simulation test, the reliability and the accuracy of evaluating the fault voltage ride-through capability of the dynamic reactive power compensation device of the photovoltaic power station are improved.

Description

Technical Field

[0001] The present invention belongs to the technical field of evaluating the fault voltage ride-through capability of dynamic reactive power compensation devices in power systems, and relates to a method, system, medium and device for evaluating the fault ride-through capability of SVG based on HIL simulation. Background Art

[0002] With the access of large-scale photovoltaic power stations, the power grid's requirements for the fault voltage ride-through capability of photovoltaic power stations are increasing day by day. To ensure that photovoltaic power stations have good fault ride-through capabilities, the key lies in the performance of their dynamic reactive power compensation devices (such as SVG) and photovoltaic inverters. Existing standards such as GB / T 19964-2024 "Technical Regulations for Connecting Photovoltaic Power Stations to the Power System" have put forward clear technical index requirements, including capabilities such as low voltage ride-through, high voltage ride-through, and continuous fault ride-through. However, traditional testing methods cannot comprehensively simulate the complex working conditions in the actual power grid environment, resulting in inaccurate evaluation of the device's fault ride-through capability.

[0003] The existing technology mainly relies on on-site testing or simple simulation tests, which have limitations in simulating extreme working conditions and are difficult to comprehensively verify the fault ride-through capability of dynamic reactive power compensation devices. For example, the current GB / T 34931-2017 "Testing Technical Regulations for Reactive Power Compensation Devices in Photovoltaic Power Stations" provides a basic testing framework, but its testing scheme can no longer adapt to the latest technical specifications and lacks provisions for key indicators such as the reactive power support capability of the device. In addition, traditional testing methods do not fully consider the consistency between the controller and the actual device, resulting in insufficient accuracy and reliability of the test results. Therefore, the existing technology has significant deficiencies in evaluating the fault ride-through capability of dynamic reactive power compensation devices in complex power grid environments and requires a more advanced simulation testing method to make up for these defects. Summary of the Invention

[0004] In view of the deficiencies of the existing technology, the present application provides a method, system, medium and device for evaluating the fault ride-through capability of SVG based on HIL simulation, which improves the reliability and accuracy of evaluating the fault voltage ride-through capability of dynamic reactive power compensation devices in photovoltaic power stations through a method based on controller hardware-in-the-loop simulation testing.

[0005] To achieve the above object, in a first aspect, the present invention provides a method for evaluating the fault ride-through capability of SVG based on HIL simulation, including:

[0006] Obtain the operating parameters of the photovoltaic power station, the operating parameters of the power grid, and the parameters of the SVG dynamic reactive power compensation device; wherein, the SVG dynamic reactive power compensation device is the SVG device in the photovoltaic power station;

[0007] Construct a simulation model based on the operating parameters of the photovoltaic power station, the operating parameters of the power grid, and the parameters of the SVG dynamic reactive power compensation device, and connect the simulation model and the SVG controller hardware; wherein, the simulation model includes: an equivalent model of the photovoltaic power station, an equivalent model of the power grid, a primary system model of the SVG, and a preset fault simulation module;

[0008] According to the preset fault ride-through test method, set corresponding test parameter combinations for each test condition; wherein, the test parameter combinations include: the power control strategy parameters of the SVG controller hardware, the equivalent impedance of the grid connection point of the equivalent model of the power grid, the power mode parameters and power ratio parameters of the primary system model of the SVG, and the fault trigger mode parameters and fault level specification parameters of the fault simulation module;

[0009] According to the preset simulation algorithm and each of the test parameter combinations, control the simulation model and the SVG controller hardware to perform simulation to obtain simulation test results;

[0010] Evaluate the simulation test results to obtain the SVG fault ride-through ability index.

[0011] Compared with the prior art, the embodiments of the present application have the following beneficial effects: By comprehensively obtaining relevant parameters, the authenticity and accuracy of the simulation test data are ensured; A simulation model including an equivalent model of the photovoltaic power station, an equivalent model of the power grid, a primary system model of the SVG, and a fault simulation module is constructed to accurately simulate the actual operating environment, providing a basis for subsequent comprehensive simulation of various working conditions and improving the reliability of the test results; By connecting the simulation model with the actual SVG controller hardware, this hardware-in-the-loop (HIL) simulation method makes the subsequent simulation consistent with the performance in actual operation, and the fault simulation is closer to the actual scenario, which not only improves the accuracy and reliability of the test results, but also can simulate the actual operation of on-site equipment in the laboratory environment, improving flexibility; Set corresponding test parameter combinations according to different test conditions, providing a test basis for reflecting the performance of the SVG dynamic reactive power compensation device under different conditions, and improving the comprehensiveness and authenticity of the test; Using the preset simulation algorithm for simulation can effectively verify the performance of the equipment under different conditions and provide reliable data support for subsequent evaluation; Evaluate the simulation test results to ensure the standardization of the evaluation process, which is convenient for experimental comparison and improvement.

[0012] In some embodiments of the first aspect of the present application, the setting of corresponding test parameter combinations for each test condition according to the preset fault ride-through test method includes:

[0013] Set the power control strategy parameters according to each of the test conditions; wherein, the power control strategy parameters are any one or more of the following: constant reactive power control strategy parameters, constant voltage control strategy parameters, and voltage-reactive power comprehensive control strategy parameters;

[0014] Set the equivalent impedance at the grid connection point according to each of the test conditions; wherein, the equivalent impedance at the grid connection point is any one or more of the following: the equivalent impedance at the grid connection point under the large method operation mode, the equivalent impedance at the grid connection point under the small method operation mode, and the equivalent impedance at the grid connection point under the normal operation mode.

[0015] Compared with the prior art, the above embodiments have the following beneficial effects: setting the constant reactive power control strategy, constant voltage control strategy, and voltage-reactive power comprehensive control strategy parameters ensures that different control strategies of the controller can be covered during the test, improving the comprehensiveness of the test; considering the equivalent impedance under the large method operation mode, small method operation mode, and normal operation mode makes the test closer to the actual operation situation and enhances the credibility of the test results.

[0016] In some embodiments of the first aspect of the present application, the setting of the corresponding test parameter combinations for each test condition according to the preset fault ride-through test method further includes:

[0017] Set the power mode parameters according to each of the test conditions; wherein, the power mode parameters include any one or more of the following: capacitive power output mode parameters and inductive power output mode parameters;

[0018] Set the fault trigger mode parameters according to each of the test conditions, wherein the fault trigger mode parameters include any one or more of the following: low voltage two-phase interphase fault mode parameters, low voltage single-phase grounding fault mode parameters, low voltage three-phase fault mode parameters, and high voltage three-phase symmetrical voltage rise fault mode parameters;

[0019] Set the fault level specification parameters according to each of the test conditions; wherein, the fault level specification parameters include any one or more of the following: drop parameters and boost parameters; wherein the drop parameters include: voltage drop amplitude parameters, voltage drop duration parameters, and voltage drop waveform parameters, and the boost parameters include: voltage rise amplitude parameters, voltage rise duration parameters, and voltage rise waveform parameters.

[0020] Compared with the prior art, the above embodiments have the following beneficial effects: By setting the parameters of the capacitive power output mode and the inductive power output mode, different power output conditions can be simulated, enhancing the diversity of testing; By setting the symmetrical faults (i.e., low-voltage three-phase fault mode) and asymmetrical faults (i.e., low-voltage two-phase interphase fault and single-phase ground fault) for low-voltage ride-through, as well as the symmetrical fault mode (i.e., three-phase symmetrical voltage rise fault) for high-voltage ride-through, various fault types are simulated, improving the comprehensiveness of testing; By setting the fault level specification parameters, faults of different severities are covered, enhancing the comprehensiveness of testing.

[0021] In some embodiments of the first aspect of the present application, evaluating the simulation test results to obtain the SVG fault ride-through ability index includes:

[0022] Calculating each index data in the simulation test results; wherein, the index data includes: the continuous operation time, the dynamic reactive current rise time, and the dynamic reactive current withdrawal time of the SVG primary system and the SVG controller hardware under each test condition, as well as the transient current duration and the transient current regulation ratio coefficient of the simulation model under each test condition;

[0023] Comparing the index data according to each preset index to obtain an evaluation result as the SVG fault ride-through ability index.

[0024] Compared with the prior art, the above embodiments have the following beneficial effects: The index calculation under different conditions not only covers symmetrical fault conditions but also particularly considers asymmetrical fault conditions, making the evaluation closer to the complex situations in the actual power grid environment. Calculating various index data such as the continuous operation time, the dynamic reactive current rise time and withdrawal time, and the transient current duration and regulation ratio coefficient under each test condition ensures that the evaluation basis is sufficient and detailed.

[0025] In some embodiments of the first aspect of the present application, the calculation method of the transient current regulation ratio coefficient is as follows:

[0026]

[0027] Wherein, K LVSF and V lt respectively represent the transient reactive current regulation ratio coefficient and the per-unit value of the grid connection point voltage in the low-voltage three-phase fault mode, satisfying 0 ≤ V lt ≤ V SETL , K HVSF and V ht respectively represent the transient reactive current regulation ratio coefficient and the per-unit value of the grid connection point voltage in the high-voltage three-phase symmetrical voltage rise fault mode, satisfying V SETH ≤ V ht ≤ 1.3, ΔIt represents the increment of dynamic reactive current injected by the SVG into the power grid, I N represents the rated current of the SVG, V SETL represents the voltage sag amplitude parameter, V SETH represents the voltage rise amplitude parameter, K TPSRR represents the transient positive-sequence reactive current regulation ratio coefficient in the low-voltage two-phase interphase fault mode or the low-voltage single-phase grounding fault mode, K TNSRR represents the transient negative-sequence reactive current regulation ratio coefficient in the low-voltage two-phase interphase fault mode or the low-voltage single-phase grounding fault mode, represents the increment of positive-sequence dynamic reactive current injected by the SVG into the power grid, represents the increment of negative-sequence dynamic reactive current absorbed by the SVG from the power grid, represents the per-unit value of the positive-sequence voltage at the grid connection point in the low-voltage two-phase interphase fault mode or the low-voltage single-phase grounding fault mode, satisfying represents the per-unit value of the negative-sequence voltage at the grid connection point in the low-voltage two-phase interphase fault mode or the low-voltage single-phase grounding fault mode.

[0028] Compared with the prior art, the above embodiments have the following beneficial effects: Through detailed calculation formulas (such as the transient current regulation ratio coefficient), the response characteristics of the SVG dynamic reactive power compensation device under different working conditions can be accurately quantified, significantly improving the accuracy and comprehensiveness of the evaluation; In addition, through standardized calculation formulas and evaluation methods, it is ensured that the results of each test are comparable, facilitating subsequent data analysis and the formulation of improvement measures.

[0029] In a second aspect, the present invention also provides an SVG fault ride-through ability evaluation system for HIL simulation, including: a parameter acquisition module, a simulation construction module, a test parameter setting module, a simulation execution module, and a result output module;

[0030] Among them, the parameter acquisition module is used to acquire the operation parameters of the photovoltaic power station, the operation parameters of the power grid, and the parameters of the SVG dynamic reactive power compensation device; among them, the SVG dynamic reactive power compensation device is the SVG device in the photovoltaic power station yard;

[0031] The simulation construction module is used to construct a simulation model according to the operation parameters of the photovoltaic power station, the operation parameters of the power grid, and the parameters of the SVG dynamic reactive power compensation device, and connect the simulation model and the SVG controller hardware; among them, the simulation model includes: a photovoltaic power station equivalent model, a power grid equivalent model, an SVG primary system model, and a preset fault simulation module;

[0032] The test parameter setting module is used to set corresponding test parameter combinations for each test condition according to a preset fault ride-through test method; wherein, the test parameter combinations include: power control strategy parameters of the SVG controller hardware, equivalent impedance at the grid connection point of the grid equivalent model, power mode parameters and power ratio parameters of the SVG primary system model, and fault trigger mode parameters and fault level specification parameters of the fault simulation module;

[0033] The simulation execution module is used to control the simulation model and the SVG controller hardware to perform simulation according to a preset simulation algorithm and each of the test parameter combinations, and obtain simulation test results;

[0034] The result output module is used to evaluate the simulation test results to obtain SVG fault ride-through ability indicators.

[0035] Compared with the prior art, the above embodiments of the present application have the following beneficial effects: By comprehensively obtaining relevant parameters, the authenticity and accuracy of the simulation test data are ensured; A simulation model including an equivalent model of a photovoltaic power station, a grid equivalent model, an SVG primary system model, and a fault simulation module is constructed to accurately simulate the actual operating environment, providing a basis for subsequent comprehensive simulation of various conditions and improving the reliability of the test results; By connecting the simulation model with the actual SVG controller hardware, this hardware-in-the-loop (HIL) simulation method makes the subsequent simulation consistent with the performance in actual operation, and the fault simulation is closer to the actual scenario, not only improving the accuracy and reliability of the test results, but also being able to simulate the actual operation of on-site equipment in the laboratory environment, improving flexibility; Corresponding test parameter combinations are set according to different test conditions, providing a test basis for reflecting the performance of the SVG dynamic reactive power compensation device under different conditions, and improving the comprehensiveness and authenticity of the test; Using a preset simulation algorithm for simulation can effectively verify the performance of the equipment under different conditions and provide reliable data support for subsequent evaluation; Evaluating the simulation test results ensures the standardization of the evaluation process, facilitating experimental comparison and improvement.

[0036] In some embodiments of the second aspect of the present application, the test parameter setting module includes: a control strategy parameter setting unit and an equivalent impedance setting unit;

[0037] Among them, the control strategy parameter setting unit is used to set the power control strategy parameters according to each of the test conditions; wherein, the power control strategy parameters are any one or more of the following: constant reactive power control strategy parameters, constant voltage control strategy parameters, and voltage-reactive power comprehensive control strategy parameters;

[0038] The equivalent impedance setting unit is configured to set the equivalent impedance of the grid connection point according to each of the test conditions; wherein, the equivalent impedance of the grid connection point is any one or more of the following: the equivalent impedance of the grid connection point under the large method operation mode, the equivalent impedance of the grid connection point under the small method operation mode, and the equivalent impedance of the grid connection point under the normal operation mode.

[0039] Compared with the prior art, the above embodiments have the following beneficial effects: setting the parameters of the constant reactive power control strategy, the constant voltage control strategy, and the voltage and reactive power comprehensive control strategy ensures that different control strategies of the controller can be covered during the test, improving the comprehensiveness of the test; considering the equivalent impedance under the large method operation mode, the small method operation mode, and the normal operation mode makes the test closer to the actual operation situation and enhances the credibility of the test results.

[0040] In some embodiments of the second aspect of the present application, the test parameter setting module further includes: a power mode parameter setting unit, a fault trigger mode parameter setting unit, and a fault level specification parameter setting unit;

[0041] Among them, the power mode parameter setting unit is configured to set the power mode parameters according to each of the test conditions; wherein, the power mode parameters include any one or more of the following: capacitive power output mode parameters and inductive power output mode parameters;

[0042] The fault trigger mode parameter setting unit is configured to set the fault trigger mode parameters according to each of the test conditions, wherein the fault trigger mode parameters include any one or more of the following: low voltage two-phase interphase fault mode parameters, low voltage single-phase ground fault mode parameters, low voltage three-phase fault mode parameters, and high voltage three-phase symmetrical voltage rise fault mode parameters;

[0043] The fault level specification parameter setting unit is configured to set the fault level specification parameters according to each of the test conditions; wherein, the fault level specification parameters include any one or more of the following: drop parameters and boost parameters; wherein the drop parameters include: voltage drop amplitude parameters, voltage drop duration parameters, and voltage drop waveform parameters, and the boost parameters include: voltage rise amplitude parameters, voltage rise duration parameters, and voltage rise waveform parameters.

[0044] Compared with the prior art, the above embodiments have the following beneficial effects: By setting the parameters of the capacitive power output mode and the inductive power output mode, different power output conditions can be simulated, enhancing the diversity of tests; By setting the symmetrical faults (i.e., low-voltage three-phase fault mode) and asymmetrical faults (i.e., low-voltage two-phase interphase fault and single-phase ground fault) of low-voltage ride-through and the symmetrical fault mode (i.e., three-phase symmetrical voltage rise fault) of high-voltage ride-through, various fault types are simulated, improving the comprehensiveness of tests; By setting the fault level specification parameters, faults of different severities are covered, enhancing the comprehensiveness of tests.

[0045] In a third aspect, the present invention also provides an HIL simulation-based SVG fault ride-through capability evaluation device, including a memory, a processor, and a computer program stored on the memory and executable on the processor. When the computer program is loaded into the processor, the steps of the HIL simulation-based SVG fault ride-through capability evaluation method are implemented.

[0046] In a fourth aspect, an embodiment of the present application also provides a computer-readable storage medium. The computer-readable storage medium stores a computer program, and when the computer program is executed by a processor, the steps of the HIL simulation-based SVG fault ride-through capability evaluation method are implemented. BRIEF DESCRIPTION OF THE DRAWINGS

[0047] Figure 1 : It is a schematic flowchart of an HIL simulation-based SVG fault ride-through capability evaluation method provided in some embodiments of the present invention.

[0048] Figure 2 : It is a schematic structural diagram of an HIL simulation-based SVG fault ride-through capability evaluation system provided in some embodiments of the present invention.

[0049] Figure 3 : It is a structural diagram of an HIL simulation-based SVG fault ride-through capability evaluation device provided in some embodiments of the present invention.

[0050] Figure 4 : It is a schematic diagram of the structure of the simulation test platform and the simulation test interface of an HIL simulation-based SVG fault ride-through capability evaluation method provided in some embodiments of the present invention.

[0051] Figure 5 : It is a schematic diagram of the requirements for the low-voltage fault ride-through capability of a photovoltaic power station in GB / T 19964-2024 "Technical Regulations for Connecting Photovoltaic Power Stations to the Power System".

[0052] Figure 6: Schematic diagram of the requirements for the low-voltage fault ride-through ability of a photovoltaic power station in GB / T 19964-2024 "Technical Regulations for Connecting Photovoltaic Power Stations to the Power System".

[0053] Figure 7 : Schematic diagram of the requirements for the high-voltage fault ride-through ability of a photovoltaic power station in GB / T 19964-2024 "Technical Regulations for Connecting Photovoltaic Power Stations to the Power System".

[0054] Figure 8 : Schematic diagram of the requirements for the high-voltage fault ride-through ability of a photovoltaic power station in GB / T 19964-2024 "Technical Regulations for Connecting Photovoltaic Power Stations to the Power System".

[0055] Figure 9 : Schematic diagram of the fault level specification parameters under the low-voltage ride-through test condition of a method for evaluating the SVG fault ride-through ability in HIL simulation provided in some embodiments of the present invention.

[0056] Figure 10 : Schematic diagram of the fault level specification parameters under the high-voltage ride-through test condition of a method for evaluating the SVG fault ride-through ability in HIL simulation provided in some embodiments of the present invention.

[0057] Figure 11 : Schematic diagram of the calculation of the dynamic reactive current rise time provided in some embodiments of the present invention.

[0058] Figure 12 : Schematic diagram of the low-voltage three-phase fault ride-through waveform of SVG at 100% capacitive power with 20% low-voltage ride-through in some embodiments of the present invention.

[0059] Figure 13 : Schematic diagram of the low-voltage three-phase fault ride-through waveform of SVG at 20% capacitive power with 20% low-voltage ride-through in some embodiments of the present invention.

[0060] Figure 14 : Schematic diagram of the low-voltage three-phase fault ride-through waveform of SVG at 100% inductive power with 20% low-voltage ride-through in some embodiments of the present invention.

[0061] Figure 15 : Schematic diagram of the low-voltage three-phase fault ride-through waveform of SVG at 20% inductive power with 20% low-voltage ride-through in some embodiments of the present invention.

[0062] Figure 16 : Schematic diagram of the test indexes and results of the low-voltage ride-through ability of three-phase symmetrical faults of SVG provided in some embodiments of the present invention. Detailed implementation mode

[0063] Next, the technical solutions in the embodiments of the present invention will be clearly and completely described in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all of the embodiments. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without making creative efforts shall fall within the protection scope of the present invention.

[0064] Embodiment 1:

[0065] Please refer to Figure 1 , which is a method for evaluating the SVG fault ride-through ability in HIL simulation provided by the embodiment of the present invention, including steps S1 to S5:

[0066] Step S1: Obtain the operating parameters of the photovoltaic power station, the operating parameters of the power grid, and the parameters of the SVG dynamic reactive power compensation device; wherein, the SVG dynamic reactive power compensation device is the SVG device in the photovoltaic power station.

[0067] In specific implementation, to ensure the accuracy and authenticity of the subsequent hardware-in-the-loop (HIL) simulation test results, it is also necessary to check the consistency between the controller hardware of the SVG dynamic reactive power compensation device and the actual equipment on the site. Therefore, the parameters collected in step S1 need to include: the controller model of the SVG dynamic reactive power compensation device and the version number of the control software, as well as the open setting type parameter settings, including high-voltage ride-through protection settings, low-voltage ride-through protection settings, frequency adaptability protection settings, voltage adaptability protection settings, current protection settings, PI parameters of the voltage loop, current loop, and phase-locked loop, etc., and the active and reactive power control strategies related to fault ride-through, including symmetric faults, asymmetric faults, continuous ride-through faults, high-frequency / low-frequency, and high-voltage / low-voltage and other related control strategies.

[0068] In this embodiment, step S1 ensures the data authenticity and accuracy of the simulation test by comprehensively obtaining relevant parameters.

[0069] Step S2: Construct a simulation model according to the operating parameters of the photovoltaic power station, the operating parameters of the power grid, and the parameters of the SVG dynamic reactive power compensation device, and connect the simulation model and the SVG controller hardware; wherein, the simulation model includes: a photovoltaic power station equivalent model, a power grid equivalent model, an SVG primary system model, and a preset fault simulation module.

[0070] In specific implementation, as Figure 4Schematic diagram of the structure of the simulation test platform and the simulation test interface shown. After building the model on the simulation test platform in step S2, to implement hardware-in-the-loop (HIL) simulation testing, it is also necessary to wire according to the corresponding input-output relationships between the simulator in the simulation model and the SVG hardware controller under test and connect to the actual control cabinet of the SVG to achieve co-simulation between the hardware controller and the simulation model.

[0071] In this embodiment, in step S2, by building a simulation model including an equivalent model of a photovoltaic power station, an equivalent model of the power grid, a primary system model of the SVG, and a fault simulation module, the actual operating environment is accurately simulated, providing a basis for subsequent comprehensive simulation of various working conditions and improving the reliability of test results; by connecting the simulation model to the actual SVG controller hardware, this hardware-in-the-loop (HIL) simulation method makes the subsequent simulation consistent with the performance in actual operation, and the fault simulation is closer to the actual scenario, not only improving the accuracy and reliability of test results, but also being able to simulate the actual operation of on-site equipment in the laboratory environment, improving flexibility.

[0072] Step S3: According to the preset fault ride-through test method, set the corresponding test parameter combinations for each test condition; wherein, the test parameter combinations include: power control strategy parameters of the SVG controller hardware, equivalent grid impedance at the point of common coupling of the equivalent grid model, power mode parameters and power ratio parameters of the SVG primary system model, and fault trigger mode parameters and fault level specification parameters of the fault simulation module.

[0073] In specific implementation, as Figure 5 and Figure 6 Schematic diagram of the requirements for the low-voltage fault ride-through ability of a photovoltaic power station shown in GB / T 19964-2024 "Technical Regulations for Connecting Photovoltaic Power Stations to the Power System", and Figure 7 and Figure 8 Schematic diagram of the requirements for the high-voltage fault ride-through ability of a photovoltaic power station shown in GB / T 19964-2024 "Technical Regulations for Connecting Photovoltaic Power Stations to the Power System", during testing, it is necessary to set each test condition under the condition of meeting the relevant requirements; preferably, step S3 can be implemented through the following preferred implementation methods, including steps S31-S35, specifically as follows:

[0074] S31: According to each of the test conditions, set the power control strategy parameters; wherein, the power control strategy parameters are any one or more of the following: constant reactive power control strategy parameters, constant voltage control strategy parameters, and voltage-reactive power comprehensive control strategy parameters.

[0075] In specific implementation, the SVG controller hardware itself has software programs representing different control strategies. To accurately simulate the operation of an actual power station, the control strategy adopted by the actual power station to which the device is applied needs to be selected during testing.

[0076] S32: Set the equivalent impedance of the grid connection point according to each of the test conditions; wherein, the equivalent impedance of the grid connection point is any one or more of the following: the equivalent impedance of the grid connection point under the large method operation mode, the equivalent impedance of the grid connection point under the small method operation mode, and the equivalent impedance of the grid connection point under the normal operation mode.

[0077] In specific implementation, to enable the grid equivalent model to accurately simulate the operation of an actual power station, not only the typical values of the grid connection point of the photovoltaic power station under normal operation mode need to be considered, but also different short-circuit ratio situations that may occur under the large and small modes need to be considered, and different grid equivalent impedances are set.

[0078] In this preferred embodiment, steps S31 - S32 ensure that different control strategies of the controller can be covered during the test and improve the comprehensiveness of the test by setting parameters of the constant reactive power control strategy, the constant voltage control strategy, and the voltage - reactive power comprehensive control strategy; considering the equivalent impedances under the large method operation mode, the small method operation mode, and the normal operation mode makes the test closer to the actual operation situation and enhances the credibility of the test results.

[0079] S33: Set the power mode parameters according to each of the test conditions; wherein, the power mode parameters include any one or more of the following: capacitive power output mode parameters and inductive power output mode parameters.

[0080] In specific implementation, to improve the comprehensiveness of the test, multiple different power output conditions can be simulated and set, such as: capacitive low - power output mode (20% rated power), capacitive high - power output mode (100% rated power), inductive low - power output mode (20% rated power), and inductive high - power output (100% rated power). These different power output conditions can be designed with more schemes according to actual needs and are not limited here.

[0081] S34: Set the fault trigger mode parameters according to each of the test conditions, wherein the fault trigger mode parameters include any one or more of the following: low - voltage two - phase inter - phase fault mode parameters, low - voltage single - phase ground fault mode parameters, low - voltage three - phase fault mode parameters, and high - voltage three - phase symmetrical voltage rise fault mode parameters.

[0082] During low-voltage fault testing, three types of faults, namely three-phase symmetrical faults, two-phase interphase faults, and single-phase ground faults, can cover most low-voltage fault situations in actual application scenarios. Three-phase symmetrical voltage rise faults are also the main high-voltage fault scenarios in actual scenarios. The above four test modes are sufficient to cover most actual fault scenarios.

[0083] S35: Set the fault level specification parameters according to each of the test conditions; wherein, the fault level specification parameters include any one or more of the following: drop parameters and boost parameters; wherein the drop parameters include: voltage drop amplitude parameter, voltage drop duration parameter, and voltage drop waveform parameter, and the boost parameters include: voltage rise amplitude parameter, voltage rise duration parameter, and voltage rise waveform parameter.

[0084] During specific implementation, as Figure 9 the schematic diagram of the fault level specification parameters under the low-voltage ride-through test conditions shown, and Figure 10 the schematic diagram of the fault level specification parameters under the high-voltage ride-through test conditions shown, when conducting low-voltage fault testing and high-voltage fault testing, multiple sets of parameter conditions should be set for testing to ensure sufficient testing.

[0085] In this preferred embodiment, steps S33 - S35 can simulate different power output conditions by setting capacitive power output mode and inductive power output mode parameters, enhancing the diversity of testing; setting symmetrical faults (i.e., low-voltage three-phase fault mode) and asymmetrical faults (i.e., low-voltage two-phase interphase faults and single-phase ground faults) for low-voltage ride-through and symmetrical fault mode (i.e., three-phase symmetrical voltage rise fault) for high-voltage ride-through, simulating multiple fault types, improving the extensiveness of testing; setting fault level specification parameters, covering faults of different severities, and enhancing the comprehensiveness of testing.

[0086] Step S4: Control the simulation model and the SVG controller hardware to conduct simulation according to the preset simulation algorithm and each of the test parameter combinations, and obtain the simulation test results.

[0087] During specific implementation, after each simulation ends, the voltage, current, and power data corresponding to each condition should be collected for subsequent analysis.

[0088] In this embodiment, step S4 conducts simulation using the preset simulation algorithm, which can effectively verify the performance of the device under different conditions and provide reliable data support for subsequent evaluation.

[0089] Step S5: Evaluate the simulation test results to obtain the SVG fault ride-through ability index.

[0090] Preferably, step S5 can be implemented through the following preferred embodiments, including steps S51 - S52, specifically as follows:

[0091] S51: Calculate each index data in the simulation test results; wherein, the index data includes: the continuous operation time, dynamic reactive current rise time, and dynamic reactive current withdrawal time of the SVG primary system and the SVG controller hardware under each test condition, as well as the transient current duration and transient current regulation ratio coefficient of the simulation model under each test condition.

[0092] Further, the calculation method of the transient current regulation ratio coefficient is as follows:

[0093]

[0094] Wherein, K LVSF and V lt respectively represent the transient reactive current regulation ratio coefficient and the per-unit value of the grid connection point voltage in the low-voltage three-phase fault mode, satisfying 0 ≤ V lt ≤ V SETL , K HVSF and V ht respectively represent the transient reactive current regulation ratio coefficient and the per-unit value of the grid connection point voltage in the high-voltage three-phase symmetrical voltage rise fault mode, satisfying V SETH ≤ V ht ≤ 1.3, ΔI t represents the increment of the dynamic reactive current injected by the SVG into the power grid, I N represents the rated current of the SVG, V SETL represents the voltage drop amplitude parameter, V SETH represents the voltage rise amplitude parameter, K TPSRR represents the transient positive-sequence reactive current regulation ratio coefficient in the low-voltage two-phase interphase fault mode or the low-voltage single-phase grounding fault mode, K TNSRR represents the transient negative-sequence reactive current regulation ratio coefficient in the low-voltage two-phase interphase fault mode or the low-voltage single-phase grounding fault mode, represents the increment of the positive-sequence dynamic reactive current injected by the SVG into the power grid, represents the increment of the negative-sequence dynamic reactive current absorbed by the SVG from the power grid, represents the per-unit value of the positive-sequence voltage at the grid connection point in the low-voltage two-phase interphase fault mode or the low-voltage single-phase grounding fault mode, satisfying represents the per-unit value of the negative-sequence voltage at the grid connection point in the low-voltage two-phase interphase fault mode or the low-voltage single-phase grounding fault mode;

[0095] S52: Compare the index data according to each preset index to obtain an evaluation result as the SVG fault ride-through ability index.

[0096] In specific implementation, it is necessary to refer to the relevant regulations of Standard GB / T 19964-2024 "Technical Regulations for Photovoltaic Power Stations Connected to the Power System" and GB / T 34931-2017 "Technical Specification for Testing Reactive Power Compensation Devices of Photovoltaic Power Stations" to evaluate the test results:

[0097] Among them, the continuous operation time can be obtained by calculating from the reactive power curves of the SVG primary system and the SVG controller hardware under different working conditions, and it is judged whether the requirement of non-disconnection operation can be met under all working conditions.

[0098] The duration of the transient current can be directly compared and judged with the indicators in the relevant regulations.

[0099] The rising time of the dynamic reactive current should not be greater than 30 ms. As shown in the calculation schematic diagram of the rising time of the dynamic reactive current, the rising time is from the moment when the grid-connected point voltage drops or rises to reach the trigger set value V Figure 11 (i.e., the voltage drop amplitude parameter set during the test) or V SETL (i.e., the voltage rise amplitude parameter set during the test) starts, to the time required for the incremental value of the dynamic reactive current of the photovoltaic power station to reach 90% of the incremental target value. Assuming that the per-unit value of the voltage triggering low-voltage ride-through is 0.90 p.u., then starting from the moment when the voltage drops to 0.90 p.u., until the incremental value of the dynamic reactive current reaches 90% of the stable reactive current, that is the rising time of the reactive current (i.e., the system response time t SETH ) in Figure 11 . up )

[0100] The withdrawal time of the dynamic reactive current is the time required for the dynamic reactive current of the photovoltaic power station to return to the initial value starting from the moment when the grid-connected point voltage recovers to the trigger set value, and it should not be greater than 30 ms.

[0101] The calculation method of the transient current regulation proportionality coefficient is different in different fault modes, which are divided into the symmetrical fault mode of low-voltage ride-through, the asymmetrical fault mode of low-voltage ride-through, and the symmetrical mode of high-voltage ride-through. The specific calculation is as shown in the above step S51.

[0102] In the symmetrical fault mode of low-voltage ride-through (i.e., the low-voltage three-phase fault mode), when the grid-connected point voltage rises to the trigger set value V SETL , the reactive current injected by the SVG dynamic reactive power compensation device into the power grid should be the sum of the reactive current output value I 0 during normal operation before the voltage drop and the incremental value of the dynamic reactive current ΔI t . The transient reactive current regulation proportionality coefficient K LVSF should satisfy not less than 1.5.

[0103] In the symmetrical fault mode of high-voltage ride-through (i.e., three-phase symmetrical voltage rise fault), when the grid-connected point voltage rises to the trigger set value V SETH , the reactive current injected by the SVG dynamic reactive power compensation device into the power grid should be the reactive current output value I 0 before the voltage rise during normal operation and the difference from the dynamic reactive current increment ΔI t . The transient reactive current regulation proportionality coefficient K HVSF should satisfy not less than 1.5.

[0104] In the asymmetrical fault mode of low-voltage ride-through (i.e., low-voltage two-phase interphase fault and single-phase ground fault), when the positive-sequence component of the grid-connected point voltage is between 60% - 90% of the nominal voltage, the positive-sequence reactive current injected by the dynamic reactive power compensation device into the power grid should be the sum of the positive-sequence reactive current output value before the voltage dip during normal operation and the positive-sequence dynamic reactive current increment . The negative-sequence reactive current absorbed from the power grid should be the difference between the negative-sequence reactive current output value before the voltage dip during normal operation and the negative-sequence dynamic reactive current increment . The transient positive-sequence reactive current regulation proportionality coefficient K TPSRR should satisfy not less than 1, and the transient negative-sequence reactive current regulation proportionality coefficient K TNSRR should satisfy not less than 1.

[0105] Taking the SVG dynamic reactive power compensation device in a certain actual 110 kV photovoltaic power station as an example, the fault ride-through ability under a three-phase low-voltage fault with the voltage amplitude dropping to 0.20 pu is evaluated, and the voltage, current, and power waveforms are recorded. The results are as Figure 12 shown in the schematic diagram of the low-voltage three-phase fault ride-through waveform of the SVG at 100% capacitive power, Figure 13 shown in the schematic diagram of the low-voltage three-phase fault ride-through waveform of the SVG at 20% capacitive power, Figure 14 shown in the schematic diagram of the low-voltage three-phase fault ride-through waveform of the SVG at 100% inductive power, and Figure 15 shown in the schematic diagram of the low-voltage three-phase fault ride-through waveform of the SVG at 20% inductive power. The final evaluation results are as Figure 16 shown in the schematic diagram of the test indexes and results of the three-phase symmetrical fault low-voltage ride-through ability of the SVG. Under this working condition, when the initial reactive power of the reactive power compensation device is set to 100% capacitive power, the transient current regulation proportionality coefficient K LVSF does not meet the requirements, and the other indexes are all qualified.

[0106] In this preferred embodiment, the index calculation in step S5 under different working conditions not only covers symmetrical fault conditions, but also particularly considers asymmetrical fault conditions, making the evaluation closer to the complex situations in the actual power grid environment. Through detailed calculation formulas (such as the transient current regulation ratio coefficient), the response characteristics of the SVG dynamic reactive power compensation device under different working conditions can be accurately quantified, significantly improving the accuracy and comprehensiveness of the evaluation. In addition, through standardized calculation formulas and evaluation methods, the results of each test are ensured to be comparable, facilitating subsequent data analysis and the formulation of improvement measures. Calculate various index data such as the continuous operation time, dynamic reactive current rise time, and withdrawal time under each test condition, as well as the transient current duration and regulation ratio coefficient, etc., to ensure that the evaluation basis is sufficient and detailed.

[0107] In summary, compared with the prior art, the above embodiments of the present application have the following beneficial effects: By comprehensively obtaining relevant parameters, the authenticity and accuracy of the simulation test data are ensured; A simulation model including an equivalent model of a photovoltaic power station, an equivalent model of the power grid, a primary system model of the SVG, and a fault simulation module is constructed to accurately simulate the actual operating environment, providing a basis for subsequent comprehensive simulation of various working conditions and improving the reliability of the test results; By connecting the simulation model with the actual SVG controller hardware, this hardware-in-the-loop (HIL) simulation method makes the subsequent simulation consistent with the performance in actual operation, and the fault simulation is closer to the actual scenario, not only improving the accuracy and reliability of the test results, but also being able to simulate the actual operation of on-site equipment in the laboratory environment, improving flexibility; Set corresponding test parameter combinations according to different test conditions to provide a test basis for reflecting the performance of the SVG dynamic reactive power compensation device under different working conditions, enhancing the comprehensiveness and authenticity of the test; Use the preset simulation algorithm for simulation to effectively verify the performance of the equipment under different working conditions and provide reliable data support for subsequent evaluation; Evaluate the simulation test results to ensure the standardization of the evaluation process, facilitating experimental comparison and improvement.

[0108] Embodiment 2:

[0109] Please refer to Figure 2 , An SVG fault ride-through ability evaluation system for HIL simulation disclosed in an embodiment of the present invention includes: a parameter acquisition module M1, a simulation construction module M2, a test parameter setting module M3, a simulation execution module M4, and a result output module M5;

[0110] Among them, the parameter acquisition module M1 is used to acquire the operating parameters of the photovoltaic power station, the operating parameters of the power grid, and the parameters of the SVG dynamic reactive power compensation device; Among them, the SVG dynamic reactive power compensation device is the SVG device in the photovoltaic power station yard.

[0111] The parameter acquisition module M1 in this embodiment ensures the authenticity and accuracy of the simulation test data by comprehensively acquiring relevant parameters.

[0112] The simulation construction module M2 is used to construct a simulation model according to the operation parameters of the photovoltaic power station, the operation parameters of the power grid, and the parameters of the SVG dynamic reactive power compensation device, and connect the simulation model and the SVG controller hardware.

[0113] Among them, the simulation model includes: an equivalent model of the photovoltaic power station, an equivalent model of the power grid, a primary system model of the SVG, and a preset fault simulation module.

[0114] The simulation construction module M2 in this embodiment constructs a simulation model including an equivalent model of the photovoltaic power station, an equivalent model of the power grid, a primary system model of the SVG, and a fault simulation module, accurately simulates the actual operation environment, provides a basis for subsequent comprehensive simulation of various working conditions, and improves the reliability of the test results; by connecting the simulation model with the actual SVG controller hardware, this hardware-in-the-loop (HIL) simulation method makes the subsequent simulation consistent with the performance in actual operation, and the fault simulation is closer to the actual scenario, which not only improves the accuracy and reliability of the test results, but also can simulate the actual operation of on-site equipment in the laboratory environment, improving flexibility.

[0115] The test parameter setting module M3 is used to set corresponding test parameter combinations for each test working condition according to the preset fault ride-through test method.

[0116] Among them, the test parameter combination includes: the power control strategy parameters of the SVG controller hardware, the equivalent impedance of the grid connection point of the equivalent grid model, the power mode parameters and power ratio parameters of the SVG primary system model, and the fault trigger mode parameters and fault level specification parameters of the fault simulation module.

[0117] The test parameter setting module M3 includes: a control strategy parameter setting unit and an equivalent impedance setting unit;

[0118] Among them, the control strategy parameter setting unit is used to set the power control strategy parameters according to each test working condition; among them, the power control strategy parameters are any one or more of the following: constant reactive power control strategy parameters, constant voltage control strategy parameters, and voltage and reactive power comprehensive control strategy parameters.

[0119] The equivalent impedance setting unit is used to set the equivalent impedance of the grid connection point according to each test working condition; among them, the equivalent impedance of the grid connection point is any one or more of the following: the equivalent impedance of the grid connection point under the large method operation mode, the equivalent impedance of the grid connection point under the small method operation mode, and the equivalent impedance of the grid connection point under the normal operation mode.

[0120] In the preferred embodiment, the test parameter setting module M3 ensures that different control strategies of the controller can be covered during the test by setting the parameters of the constant reactive power control strategy, the constant voltage control strategy, and the voltage-reactive comprehensive control strategy, improving the comprehensiveness of the test; considering the equivalent impedance under the large method operation mode, the small method operation mode, and the normal operation mode makes the test closer to the actual operation situation and enhances the credibility of the test results.

[0121] Furthermore, the test parameter setting module M3 further includes: a power mode parameter setting unit, a fault trigger mode parameter setting unit, and a fault level specification parameter setting unit;

[0122] Among them, the power mode parameter setting unit is used to set the power mode parameters according to each of the test conditions; among them, the power mode parameters include any one or more of the following: capacitive power output mode parameters and inductive power output mode parameters.

[0123] The fault trigger mode parameter setting unit is used to set the fault trigger mode parameters according to each of the test conditions, where the fault trigger mode parameters include any one or more of the following: low voltage two-phase interphase fault mode parameters, low voltage single-phase ground fault mode parameters, low voltage three-phase fault mode parameters, and high voltage three-phase symmetrical voltage rise fault mode parameters.

[0124] The fault level specification parameter setting unit is used to set the fault level specification parameters according to each of the test conditions; among them, the fault level specification parameters include any one or more of the following: drop parameters and boost parameters; among them, the drop parameters include: voltage drop amplitude parameters, voltage drop duration parameters, and voltage drop waveform parameters, and the boost parameters include: voltage rise amplitude parameters, voltage rise duration parameters, and voltage rise waveform parameters.

[0125] In the preferred embodiment, the test parameter setting module M3 can simulate different power output conditions by setting the capacitive power output mode and inductive power output mode parameters, enhancing the diversity of the test; setting symmetrical faults (i.e., low voltage three-phase fault mode) and asymmetrical faults (i.e., low voltage two-phase interphase fault and single-phase ground fault) for low voltage ride-through and symmetrical fault mode (i.e., three-phase symmetrical voltage rise fault) for high voltage ride-through to simulate various fault types, improving the extensiveness of the test; setting the fault level specification parameters to cover faults of different severities and enhancing the comprehensiveness of the test.

[0126] The simulation execution module M4 is used to control the simulation model and the SVG controller hardware to perform a simulation according to a preset simulation algorithm and each combination of the test parameters to obtain a simulation test result.

[0127] In this embodiment, the simulation execution module M4 performs simulation using a preset simulation algorithm, which can effectively verify the performance of the device under different working conditions and provide reliable data support for subsequent evaluation.

[0128] The result output module M5 is used to evaluate the simulation test results to obtain the SVG fault ride-through ability index.

[0129] The result output module M5 includes: an index calculation unit and an evaluation unit;

[0130] Among them, the index calculation unit is used to calculate each index data in the simulation test results; among them, the index data includes: the continuous operation time, dynamic reactive current rise time, and dynamic reactive current withdrawal time of the SVG primary system and the SVG controller hardware under each test condition, as well as the transient current continuous time and transient current regulation proportionality coefficient of the simulation model under each test condition;

[0131] Furthermore, the calculation method of the transient current regulation proportionality coefficient is as follows:

[0132]

[0133] Among them, K LVSF and V lt respectively represent the transient reactive current regulation proportionality coefficient and the per-unit value of the grid connection point voltage in the low-voltage three-phase fault mode, satisfying 0 ≤ V lt ≤ V SETL , K HVSF and V ht respectively represent the transient reactive current regulation proportionality coefficient and the per-unit value of the grid connection point voltage in the high-voltage three-phase symmetrical voltage rise fault mode, satisfying V SETH ≤ V ht ≤ 1.3, ΔI t represents the increment of the dynamic reactive current injected by the SVG into the power grid, I N represents the rated current of the SVG, V SETL represents the voltage dip amplitude parameter, V SETH represents the voltage rise amplitude parameter, K TPSRR represents the transient positive-sequence reactive current regulation proportionality coefficient in the low-voltage two-phase interphase fault mode or the low-voltage single-phase ground fault mode, K TNSRR represents the transient negative-sequence reactive current regulation proportionality coefficient in the low-voltage two-phase interphase fault mode or the low-voltage single-phase ground fault mode, represents the increment of the positive-sequence dynamic reactive current injected by the SVG into the power grid, represents the increment of the negative-sequence dynamic reactive current absorbed by the SVG from the power grid, Represents the per-unit value of the positive-sequence voltage at the grid connection point in the low-voltage two-phase interphase fault mode or the low-voltage single-phase grounding fault mode, satisfying Represents the per-unit value of the negative-sequence voltage at the grid connection point in the low-voltage two-phase interphase fault mode or the low-voltage single-phase grounding fault mode.

[0134] The evaluation unit is used to compare the index data according to each preset index to obtain an evaluation result as the SVG fault ride-through ability index.

[0135] In this preferred embodiment, the index calculation of the result output module M5 under different working conditions not only covers the symmetrical fault conditions, but also particularly considers the asymmetrical fault conditions, making the evaluation closer to the complex situations in the actual power grid environment. Through detailed calculation formulas (such as the transient reactive current regulation ratio coefficient), the response characteristics of the SVG dynamic reactive power compensation device under different working conditions can be accurately quantified, significantly improving the accuracy and comprehensiveness of the evaluation. In addition, through standardized calculation formulas and evaluation methods, it is ensured that the results of each test are comparable, facilitating subsequent data analysis and the formulation of improvement measures. Calculate various index data such as the continuous operation time, dynamic reactive current rise time, and withdrawal time, as well as the transient current duration and regulation ratio coefficient under each test working condition to ensure that the evaluation basis is sufficient and detailed.

[0136] In summary, compared with the prior art, the embodiments of the present application have the following beneficial effects: By comprehensively obtaining relevant parameters, the authenticity and accuracy of the simulation test data are ensured; A simulation model including an equivalent model of a photovoltaic power station, an equivalent model of the power grid, a primary system model of the SVG, and a fault simulation module is constructed to accurately simulate the actual operation environment, providing a basis for subsequent comprehensive simulation of various working conditions and improving the reliability of the test results; By connecting the simulation model with the actual SVG controller hardware, this hardware-in-the-loop (HIL) simulation method makes the subsequent simulation consistent with the performance in actual operation, and the fault simulation is closer to the actual scenario, not only improving the accuracy and reliability of the test results, but also being able to simulate the actual operation of on-site equipment in the laboratory environment, improving flexibility; Set corresponding combinations of each test parameter according to different test working conditions to provide a test basis for reflecting the performance of the SVG dynamic reactive power compensation device under different working conditions, enhancing the comprehensiveness and authenticity of the test; Use the preset simulation algorithm for simulation to effectively verify the performance of the equipment under different working conditions and provide reliable data support for subsequent evaluation; Evaluate the simulation test results to ensure the standardization of the evaluation process, facilitating experimental comparison and improvement.

[0137] The division of the above-described modules is only a logical function division, and there may be other division methods in actual implementation. For example, multiple modules can be combined or integrated into another system.

[0138] Embodiment 3:

[0139] Figure 3 The structure diagram of an HIL simulation-based SVG fault ride-through capability evaluation device of this application is presented. As Figure 3 shown, the HIL simulation-based SVG fault ride-through capability evaluation device may include: a processor N1, a memory N2, a data interface N3, and a communication bus N4.

[0140] Among them: The processor N1, the memory N2, and the data interface N3 complete mutual communication through the communication bus N4; the data interface N3 is used for data communication with other devices such as an input device or an output device, etc.; the processor N1 is used to execute a program N5, and specifically can execute the relevant steps in the above-mentioned embodiment of the method for evaluating the SVG fault ride-through capability based on HIL simulation.

[0141] Specifically, the program N5 may include program code, and this program code includes computer-executable instructions.

[0142] The processor N1 may be a central processing unit CPU, or a specific integrated circuit ASIC (Application Specific Integrated Circuit), or one or more integrated circuits configured to implement the embodiments of this application. One or more processors included in the HIL simulation-based SVG fault ride-through capability evaluation device may be of the same type of processor, such as one or more CPUs, or may be of different types of processors, such as one or more CPUs and one or more ASICs.

[0143] The memory N2 is used to store the program N5. The memory N2 may include a high-speed RAM memory, and may also include a non-volatile memory, such as at least one disk memory.

[0144] The algorithms or displays provided herein are not inherently related to any specific computer, virtual system, or other device. In addition, the embodiments of this application are not directed to any specific programming language.

[0145] Embodiment 4:

[0146] The embodiment of the present invention also provides a computer-readable storage medium. The storage medium stores at least one executable instruction. When the executable instruction runs on an HIL simulation-based SVG fault ride-through capability evaluation device / system, it causes the HIL simulation-based SVG fault ride-through capability evaluation device / system to execute the method for evaluating the SVG fault ride-through capability based on HIL simulation in any of the above method embodiments.

[0147] In the specification provided herein, numerous specific details are set forth. However, it will be understood that embodiments of the present application may be practiced without these specific details. Similarly, in order to streamline the present application and assist in understanding one or more of the various inventive aspects, in the above description of exemplary embodiments of the present application, the various features of the embodiments of the present application are sometimes grouped together into a single embodiment, figure, or description thereof. Among them, the claims following the specific implementation manner are hereby expressly incorporated into the specific implementation manner, where each claim itself serves as a separate embodiment of the present application.

[0148] Those skilled in the art can understand that the modules in the devices in the embodiments can be adaptively changed and arranged in one or more devices different from the embodiments. The modules or units or components in the embodiments can be combined into one module or unit or component, and in addition, they can be divided into multiple sub-modules or sub-units or sub-components. Except that at least some of such features and / or processes or units are mutually exclusive.

Claims

1. A method for evaluating SVG fault ride-through capability based on HIL simulation, characterized in that: include: Acquiring operating parameters of a photovoltaic power station, operating parameters of a power grid, and parameters of an SVG dynamic reactive power compensation device; wherein the SVG dynamic reactive power compensation device is an SVG device in a photovoltaic power station; According to the operating parameters of the photovoltaic power station, the operating parameters of the power grid and the parameters of the SVG dynamic reactive power compensation device, a simulation model is constructed, and the simulation model and the SVG controller hardware are connected; wherein the simulation model includes: an equivalent model of the photovoltaic power station, an equivalent model of the power grid, an SVG primary system model and a preset fault simulation module; According to the preset fault ride-through test method, a corresponding test parameter combination is set for each test condition; wherein the test parameter combination includes: power control strategy parameters of the SVG controller hardware, grid connection point equivalent impedance of the grid equivalent model, power mode parameters and power ratio parameters of the SVG primary system model, and fault trigger mode parameters and fault level specification parameters of the fault simulation module; According to a preset simulation algorithm and each of the test parameter combinations, the simulation model and the SVG controller hardware are controlled to perform simulation to obtain simulation test results; The simulation test results are evaluated to obtain the SVG fault ride-through capability index.

2. The method for evaluating SVG fault ride-through capability based on HIL simulation according to claim 1, characterized in that: The method of setting a corresponding test parameter combination for each test condition according to the preset fault ride-through test method includes: According to each of the test conditions, the power control strategy parameters are set; wherein the power control strategy parameters are any one or more of the following: constant reactive power control strategy parameters, constant voltage control strategy parameters, and voltage reactive power comprehensive control strategy parameters; According to each of the test conditions, the grid connection point equivalent impedance is set; wherein the grid connection point equivalent impedance is any one or more of the following: the equivalent impedance of the grid connection point under the large method operation mode, the equivalent impedance of the grid connection point under the small method operation mode, and the equivalent impedance of the grid connection point under the normal operation mode.

3. The method for evaluating SVG fault ride-through capability based on HIL simulation according to claim 2, characterized in that: The method of setting a corresponding test parameter combination for each test condition according to the preset fault ride-through test method also includes: According to each of the test conditions, the power mode parameters are set; wherein the power mode parameters include any one or more of the following: capacitive power output mode parameters and inductive power output mode parameters; According to each of the test conditions, the fault trigger mode parameters are set, wherein the fault trigger mode parameters include any one or more of the following: low voltage two-phase phase-to-phase fault mode parameters, low voltage single-phase to ground fault mode parameters, low voltage three-phase fault mode parameters and high voltage three-phase symmetrical voltage rise fault mode parameters; The fault level specification parameters are set according to each of the test conditions; wherein the fault level specification parameters include any one or more of the following: drop parameters and boost parameters; wherein the drop parameters include: voltage drop amplitude parameters, voltage drop duration parameters and voltage drop waveform parameters, and the boost parameters include: voltage increase amplitude parameters, voltage increase duration parameters and voltage increase waveform parameters.

4. The method for evaluating SVG fault ride-through capability based on HIL simulation as claimed in claim 3, characterized in that: The evaluation of the simulation test results to obtain the SVG fault ride-through capability index includes: Calculate each index data in the simulation test result; wherein the index data include: the continuous operation time, dynamic reactive current rise time and dynamic reactive current exit time of the SVG primary system and SVG controller hardware under each test condition, and the transient current duration and transient current adjustment proportional coefficient of the simulation model under each test condition; According to each preset indicator, the indicator data is compared to obtain an evaluation result as an indicator of the SVG fault ride-through capability.

5. The method for evaluating SVG fault ride-through capability based on HIL simulation according to claim 4, characterized in that: The transient current regulation proportional coefficient is calculated as follows: Among them, K LVSF and V lt They represent the transient reactive current regulation proportional coefficient and the grid-connected point voltage per unit value under the low voltage three-phase fault mode, satisfying 0≤V lt ≤V SETL , K HVSF and V ht They represent the transient reactive current regulation proportional coefficient and the grid connection point voltage per unit value under the high voltage three-phase symmetrical voltage rise fault mode, satisfying V SETH ≤V ht ≤1.3, ΔI t It represents the dynamic reactive current increment injected by SVG into the grid, I N Indicates the rated current of SVG, V SETL Indicates the voltage drop amplitude parameter, V SETH Indicates the voltage rise amplitude parameter, K TPSRR It represents the transient positive sequence reactive current regulation proportional coefficient in low voltage two-phase interphase fault mode or low voltage single-phase ground fault mode, K TNSRR It indicates the transient negative sequence reactive current regulation proportional coefficient in low voltage two-phase interphase fault mode or low voltage single-phase ground fault mode. It represents the positive sequence dynamic reactive current increment injected by SVG into the power grid. It represents the negative sequence dynamic reactive current increment absorbed by SVG from the power grid. Indicates the per-unit value of the positive sequence voltage at the grid connection point in the low voltage two-phase phase-to-phase fault mode or the low voltage single-phase grounding fault mode, satisfying It indicates the per-unit value of the negative sequence voltage at the grid connection point in a low-voltage two-phase-to-phase fault mode or a low-voltage single-phase-to-ground fault mode.

6. A HIL simulation SVG fault ride-through capability assessment system, characterized in that: include: Parameter acquisition module, simulation construction module, test parameter setting module, simulation execution module and result output module; The parameter acquisition module is used to acquire the operating parameters of the photovoltaic power station, the operating parameters of the power grid and the parameters of the SVG dynamic reactive power compensation device; wherein the SVG dynamic reactive power compensation device is an SVG device in the photovoltaic power station; The simulation construction module is used to construct a simulation model according to the operating parameters of the photovoltaic power station, the operating parameters of the power grid and the parameters of the SVG dynamic reactive power compensation device, and connect the simulation model and the SVG controller hardware; wherein the simulation model includes: an equivalent model of the photovoltaic power station, an equivalent model of the power grid, an SVG primary system model and a preset fault simulation module; The test parameter setting module is used to set a corresponding test parameter combination for each test condition according to a preset fault ride-through test method; wherein the test parameter combination includes: power control strategy parameters of the SVG controller hardware, grid connection point equivalent impedance of the grid equivalent model, power mode parameters and power ratio parameters of the SVG primary system model, and fault trigger mode parameters and fault level specification parameters of the fault simulation module; The simulation execution module is used to control the simulation model and the SVG controller hardware to perform simulation according to a preset simulation algorithm and each of the test parameter combinations to obtain a simulation test result; The result output module is used to evaluate the simulation test results to obtain the SVG fault ride-through capability index.

7. The HIL simulation SVG fault ride-through capability evaluation system according to claim 6, characterized in that: The test parameter setting module includes: a control strategy parameter setting unit and an equivalent impedance setting unit; Wherein, the control strategy parameter setting unit is used to set the power control strategy parameters according to each of the test conditions; wherein the power control strategy parameters are any one or more of the following: constant reactive power control strategy parameters, constant voltage control strategy parameters and voltage reactive power comprehensive control strategy parameters; The equivalent impedance setting unit is used to set the equivalent impedance of the grid connection point according to each of the test conditions; wherein the equivalent impedance of the grid connection point is any one or more of the following: the equivalent impedance of the grid connection point under the large method operation mode, the equivalent impedance of the grid connection point under the small method operation mode, and the equivalent impedance of the grid connection point under the normal operation mode.

8. The HIL simulation SVG fault ride-through capability evaluation system according to claim 7, characterized in that: The test parameter setting module further includes: a power mode parameter setting unit, a fault trigger mode parameter setting unit and a fault level specification parameter setting unit; Wherein, the power mode parameter setting unit is used to set the power mode parameters according to each of the test conditions; wherein the power mode parameters include any one or more of the following: capacitive power output mode parameters and inductive power output mode parameters; The fault trigger mode parameter setting unit is used to set the fault trigger mode parameters according to each of the test conditions, wherein the fault trigger mode parameters include any one or more of the following: low voltage two-phase phase-to-phase fault mode parameters, low voltage single-phase to ground fault mode parameters, low voltage three-phase fault mode parameters and high voltage three-phase symmetrical voltage rise fault mode parameters; The fault level specification parameter setting unit is used to set the fault level specification parameters according to each of the test conditions; wherein the fault level specification parameters include any one or more of the following: drop parameters and boost parameters; wherein the drop parameters include: voltage drop amplitude parameters, voltage drop duration parameters and voltage drop waveform parameters, and the boost parameters include: voltage increase amplitude parameters, voltage increase duration parameters and voltage increase waveform parameters.

9. A HIL simulated SVG fault ride-through capability assessment device, comprising a memory, a processor, and a computer program stored in the memory and executable on the processor, characterized in that: When the computer program is loaded into the processor, the steps of the method for evaluating the fault ride-through capability of SVG by HIL simulation according to any one of claims 1 to 5 are implemented.

10. A computer-readable storage medium storing a computer program, characterized in that: When the computer program is executed by a processor, the steps of the method for evaluating SVG fault ride-through capability by HIL simulation according to any one of claims 1 to 5 are implemented.

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