Image sensor having nano-photon lens array and electronic device including same

Abstract

There is provided an image sensor including: a sensor substrate including a first pixel, a second pixel, a third pixel, and a fourth pixel; and a nanophotonic lens array including a first meta-region, a second meta-region, a third meta-region, and a fourth meta-region, where each of the first to fourth meta-regions includes a plurality of nanostructures, the first meta-region includes a plurality of pairs at different distances from the horizontal centerline in a second direction perpendicular to the first direction, and the second meta-region includes a plurality of pairs at different distances from the horizontal centerline in a second direction perpendicular to the first direction. Each pair has two nanostructures symmetrical in the first direction, the horizontal center line passes through the center of the first meta-region in the first direction, and the spacing between the two symmetrical nanostructures in the first direction increases in a direction toward the horizontal center line in the second direction, and the spacing between the two symmetrical nanostructures in the second direction increases in a direction toward the horizontal center line in the second direction. And in the direction far away from the horizontal center line in the second direction, the interval between the two symmetrical nanostructures in the first direction is reduced.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims the priority of Korean Patent Application No. 10-2023-0167156 filed on November 27, 2023, in the Korean Intellectual Property Office, and Korean Patent Application No. 10-2024-0138424 filed on October 11, 2024, in the Korean Intellectual Property Office, the disclosures of which are incorporated herein by reference in their entirety. Technical Field

[0003] One or more embodiments relate to an image sensor including a nanophotonic lens array and an electronic device including the image sensor. Background Art

[0004] Image sensors generally sense the color of incident light by using color filters. However, because color filters absorb light of colors other than the expected color of light, color filters may have relatively low light utilization efficiency. For example, in the case of using a red-green-blue (RGB) color filter, only 1 / 3 of the incident light is transmitted through the red-green-blue color filter, and the rest of the incident light (i.e., 2 / 3 of the incident light) is absorbed. Therefore, the light utilization efficiency is only about 33%. Therefore, in a color display device or a color image sensor, most of the light loss occurs in the color filter. Summary of the invention

[0005] One or more embodiments provide an image sensor including a nanophotonic lens array and having improved optical efficiency, and an electronic device including the image sensor.

[0006] Additional aspects will be set forth in part in the description which follows and, in part, will be apparent from the description, or may be learned by practice of the embodiments presented in the disclosure.

[0007] According to one aspect of example embodiments, there is provided an image sensor, comprising: a sensor substrate, comprising a first pixel, a second pixel, a third pixel, and a fourth pixel, the first pixel, the second pixel, the third pixel, and the fourth pixel being configured to sense light; and a nanophotonic lens array, comprising a first meta-region, a second meta-region, a third meta-region, and a fourth meta-region, the first meta-region corresponding to the first pixel, the second meta-region corresponding to the second pixel, the third meta-region corresponding to the third pixel, and the fourth meta-region corresponding to the fourth pixel, wherein each of the first meta-region, the second meta-region, the third meta-region, and the fourth meta-region comprises a plurality of nanostructures, the plurality of nanostructures being configured to color incident light incident on the nanophotonic lens array. The invention relates to a method for color separation, and focusing light of a first wavelength band onto a first pixel and a fourth pixel, focusing light of a second wavelength band onto a second pixel, and focusing light of a third wavelength band onto a third pixel, wherein the first meta-region includes a plurality of pairs at different distances from a horizontal center line in a second direction perpendicular to the first direction, each pair having two nano-structures symmetrical in the first direction, the horizontal center line passing through the center of the first meta-region along the first direction, and wherein in a direction toward the horizontal center line in the second direction, the spacing between two symmetrical nano-structures of corresponding pairs among the plurality of pairs in the first direction increases, and in a direction away from the horizontal center line in the second direction, the spacing between two symmetrical nano-structures of corresponding pairs among the plurality of pairs in the first direction decreases.

[0008] An interval in the first direction between two nanostructures symmetrical in the first direction of a pair disposed on the horizontal center line among the plurality of pairs may be L / 8 to 3L / 8, where L is a side length of the first meta-region.

[0009] The spacing ΔS in the first direction between two symmetrical nanostructures arranged at a distance d from the horizontal center line in the second direction may satisfy 2L(0.13-0.47y 2 )<ΔS<2L(0.38-0.96y 2 -0.89y 4 -1.63y 6 )where y=d / L and 0<y<0.5.

[0010] The first meta-region may include: a first nanostructure, on a vertical center line, the vertical center line passing through the center of the first meta-region in the second direction; a second nanostructure and a third nanostructure, symmetrical in the first direction at a first distance from the horizontal center line in the second direction; and a fourth nanostructure and a fifth nanostructure, symmetrical in the first direction at a second distance from the horizontal center line in the second direction, the second distance being smaller than the first distance, wherein a spacing between the fourth nanostructure and the fifth nanostructure in the first direction is greater than a spacing between the second nanostructure and the third nanostructure in the first direction.

[0011] The second nanostructure and the third nanostructure may be symmetrical to each other with respect to the vertical center line in the first direction, and the fourth nanostructure and the fifth nanostructure may be symmetrical to each other with respect to the vertical center line in the first direction.

[0012] The spacing between the fourth nanostructure and the fifth nanostructure in the first direction at a distance d from the horizontal center line in the second direction, or the spacing between the second nanostructure and the third nanostructure in the first direction is ΔS, and ΔS may satisfy: 2L(0.13-0.47y 2 )<ΔS<2L(0.38-0.96y 2 -0.89y 4 -1.63y 6 ), where L represents the length of a side of the first element region, and y=d / L and 0<y<0.5.

[0013] The first nanostructure may have a first cross-sectional size, the second and third nanostructures may have a second cross-sectional size, and the fourth and fifth nanostructures may have a third cross-sectional size, and an average of the second and third cross-sectional sizes may be greater than the first cross-sectional size.

[0014] A ratio of the first cross-sectional dimension to an average of the second cross-sectional dimension and the third cross-sectional dimension may be less than or equal to 0.85.

[0015] A ratio of the first cross-sectional dimension to an average of the second cross-sectional dimension and the third cross-sectional dimension may be 0.7 to 0.8.

[0016] The first meta-region may include: a sixth nanostructure and a seventh nanostructure, which are symmetrical in the first direction at a first distance from the horizontal center line in the second direction; and an eighth nanostructure and a ninth nanostructure, which are symmetrical in the first direction at a second distance from the horizontal center line in the second direction, wherein the spacing between the second nanostructure and the third nanostructure in the first direction is greater than the spacing between the sixth nanostructure and the seventh nanostructure in the first direction, and the spacing between the fourth nanostructure and the fifth nanostructure in the first direction is greater than the spacing between the eighth nanostructure and the ninth nanostructure in the first direction.

[0017] The fourth nanostructure may be on a first diagonal line passing through the center of the first meta region, and the fifth nanostructure may be on a second diagonal line crossing the first diagonal line and passing through the center of the first meta region.

[0018] The first meta-region may further include a plurality of nanostructures symmetrical to the second nanostructure and the third nanostructure, respectively, with respect to the first diagonal line, and a plurality of nanostructures symmetrical to the second nanostructure and the third nanostructure, respectively, with respect to the second diagonal line.

[0019] The first nanostructure, the second nanostructure, the third nanostructure, the fourth nanostructure and the fifth nanostructure may have a cross-sectional size greater than 80 nm, and a plurality of nanostructures symmetrical with the second nanostructure and the third nanostructure respectively relative to the first diagonal, and a plurality of nanostructures symmetrical with the second nanostructure and the third nanostructure respectively relative to the second diagonal may each have a cross-sectional size less than or equal to 80 nm.

[0020] The first meta-region may further include a plurality of nanostructures symmetrical to the first nanostructure, the second nanostructure, the third nanostructure, the fourth nanostructure, and the fifth nanostructure with respect to the horizontal center line in the second direction.

[0021] The first meta-region may include: a first-1 nanostructure and a first-2 nanostructure, which are symmetrical in a first direction; a second nanostructure and a third nanostructure, which are symmetrical in the first direction at a first distance from a horizontal center line in the second direction; and a fourth nanostructure and a fifth nanostructure, which are symmetrical in the first direction at a second distance from the horizontal center line in the second direction, the second distance being smaller than the first distance, wherein a spacing between the fourth nanostructure and the fifth nanostructure in the first direction is larger than a spacing between the second nanostructure and the third nanostructure in the first direction, and a spacing between the first-1 nanostructure and the first-2 nanostructure in the first direction is smaller than a spacing between the second nanostructure and the third nanostructure in the first direction.

[0022] An average cross-sectional size of the first-1 nanostructure and the first-2 nanostructure may be smaller than an average cross-sectional size of the second nanostructure, the third nanostructure, the fourth nanostructure, and the fifth nanostructure.

[0023] A ratio of average cross-sectional sizes of the first-1 nanostructure and the first-2 nanostructure to average cross-sectional sizes of the second to fifth nanostructures may be less than or equal to 0.85.

[0024] The first-1 nanostructure and the first-2 nanostructure may be between the pair of the second nanostructure and the third nanostructure and the pair of the fourth nanostructure and the fifth nanostructure with respect to the horizontal center line in the second direction.

[0025] The first and fourth meta regions may be arranged in a first diagonal direction, the second and third meta regions may be arranged in a second diagonal direction crossing the first diagonal direction, and the fourth meta region may be rotated 90 degrees relative to the first meta region.

[0026] According to another aspect of an example embodiment, an electronic device is provided, including: a lens assembly configured to form an optical image of an object; an image sensor configured to convert the optical image formed by the lens assembly into an electrical signal; and a processor configured to process the electrical signal generated by the image sensor, the image sensor including: a sensor substrate including a first pixel, a second pixel, a third pixel, and a fourth pixel, the first pixel, the second pixel, the third pixel, and the fourth pixel being configured to sense light; and a nanophotonic lens array including a first element region, a second element region, a third element region, and a fourth element region, the first element region corresponding to the first pixel, the second element region corresponding to the second pixel, the third element region corresponding to the third pixel, and the fourth element region corresponding to the fourth pixel, wherein each of the first element region, the second element region, the third element region, and the fourth element region The invention comprises a plurality of nanostructures configured to perform color separation on incident light incident on a nanophotonic lens array, and to converge light of a first wavelength band onto a first pixel and a fourth pixel, converge light of a second wavelength band onto a second pixel, and converge light of a third wavelength band onto a third pixel, wherein a first meta-region comprises a plurality of pairs at different distances from a horizontal center line in a second direction perpendicular to the first direction, each pair having two nanostructures symmetrical in the first direction, the horizontal center line passing through the center of the first meta-region along the first direction, and wherein in a direction toward the horizontal center line in the second direction, a spacing in the first direction between two symmetrical nanostructures of corresponding pairs among the plurality of pairs increases, and in a direction away from the horizontal center line in the second direction, a spacing in the first direction between two symmetrical nanostructures of corresponding pairs among the plurality of pairs decreases. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] The above and other aspects, features and advantages of example embodiments of the present disclosure will become more apparent from the following description in conjunction with the accompanying drawings, in which:

[0028] Figure 1 is a schematic block diagram of an image sensor according to an example embodiment;

[0029] Figure 2A , Figure 2B and Figure 2C is a diagram showing examples of various pixel arrangements in a pixel array of an image sensor;

[0030] Figure 3A and Figure 3B is a cross-sectional view schematically showing a structure of a pixel array in an image sensor according to an embodiment;

[0031] Figure 4A It is schematically shown Figure 3A and Figure 3B a plan view of a pixel arrangement of a sensor substrate in a pixel array;

[0032] Figure 4B It is schematically shown Figure 3A and Figure 3B a plan view of another pixel arrangement of a sensor substrate in a pixel array;

[0033] Figure 5 It is schematically shown Figure 3A and Figure 3B A plan view of the structure of a color filter layer in a pixel array;

[0034] Figure 6 It shows Figure 3A and Figure 3B A plan view of an example of a unit cell pattern in a nanophotonic lens array;

[0035] Figure 7 is a diagram showing an example of phase profiles of green light and blue light after passing through a nanophotonic lens array;

[0036] Figure 8 is a diagram showing an example of phase profiles of red light and green light after passing through a nanophotonic lens array;

[0037] Fig. 9 is a diagram showing an example of an array of green light converging regions formed by a nanophotonic lens array;

[0038] Fig.10 is a diagram showing an example of an array of blue light concentrating regions formed by a nanophotonic lens array;

[0039] Fig.11 is a diagram showing an example of an array of red light converging regions formed by a nanophotonic lens array;

[0040] Fig.12 is a graph showing an example of a relationship between various geometric shapes of a plurality of nanostructures of a nanophotonic lens array and a difference in autofocus (AF) characteristics of a first pixel and a fourth pixel in one unit pixel pattern;

[0041] Fig.13 is a graph showing an example of a relationship between various geometric shapes of a plurality of nanostructures of a nanophotonic lens array and a difference in modulation transfer function (MTF) characteristics of a first pixel and a fourth pixel in one unit pixel pattern;

[0042] Fig.14 is a plan view showing the structure of a nanophotonic lens array according to a related example;

[0043] Fig.15 is a diagram showing an example of a spot shape of green light formed on a first pixel by a nanophotonic lens array according to a related example;

[0044] Fig.16 is a diagram showing an example of a spot shape of green light formed on a first pixel by a nanophotonic lens array according to example embodiments;

[0045] Fig.17 is a plan view showing another example of a first element region in a nanophotonic lens array;

[0046] Fig.18 is a plan view showing another example of a first element region in a nanophotonic lens array;

[0047] Fig.19 is a plan view showing another example of a first element region in a nanophotonic lens array;

[0048] Fig. 20 is a plan view showing another example of a unit cell pattern in a nanophotonic lens array;

[0049] Fig.21 is a plan view showing another example of a unit cell pattern in a nanophotonic lens array;

[0050] Fig. 22 is a block diagram of an electronic device including an image sensor according to example embodiments;

[0051] Fig.23 yes Fig. 22 Block diagram of the camera module in;

[0052] Fig.24 is a block diagram of an electronic device including a multi-camera module; and

[0053] Fig.25 yes Fig.24 Detailed block diagram of a multi-camera module in an electronic device. DETAILED DESCRIPTION

[0054] Now with reference to the embodiment in detail, examples of the embodiments are shown in the accompanying drawings, and the same reference numerals refer to the same elements throughout the accompanying drawings. In this regard, the embodiments presented may have different forms and should not be construed as being limited to the description set forth herein. Therefore, the embodiments are described below only by reference to the accompanying drawings to explain various aspects. The term "and / or" used herein includes any and all combinations of one or more associated listed items. Statements such as "at least one of..." modify the entire element list when following the list of elements, rather than modifying the individual elements in the list. For example, the statement "at least one of a, b, and c" should be understood to include only a, only b, only c, both a and b, both a and c, both b and c, or all of a, b, and c.

[0055] Hereinafter, an image sensor including a nanophotonic lens array and an electronic device including the image sensor will be described in detail with reference to the accompanying drawings. The embodiments of the present disclosure are capable of various modifications and may be embodied in many different forms. In the accompanying drawings, the same reference numerals represent the same components, and the sizes of the components in the accompanying drawings may be exaggerated for ease of explanation.

[0056] When a layer, film, region, or panel is referred to as being “on” another element, it can be directly on / under / to the left / to the right of the other element, or intervening layers may also be present.

[0057] It should be understood that although the terms "first", "second", etc. can be used in this article to describe various components, these components should not be limited by these terms. These terms are only used to distinguish components from each other. These terms do not limit the materials or structures of the components to be different from each other.

[0058] Expressions in the singular include plural expressions unless clearly different meanings are given in the context. It will also be understood that when a part is said to "include" a component, the part may not exclude another component but may also include another component unless the context indicates otherwise.

[0059] Furthermore, terms such as “unit”, “module” and the like provided herein indicate a unit that performs a function or an operation and may be implemented by hardware, software, or a combination of hardware and software.

[0060] The use of the term "above" and similar indicative terms may correspond to both the singular and the plural.

[0061] In addition, the steps of all methods described herein can be performed in any appropriate order, unless otherwise indicated herein or the context clearly indicates otherwise. In addition, the use of all exemplary terms (e.g., etc.) is only to describe the technical spirit in detail, and the scope of rights is not limited by these terms, unless the context is limited by the claims.

[0062] Figure 1 is a schematic block diagram of an image sensor 1000 according to an example embodiment. Figure 1 , the image sensor 1000 may include a pixel array 1100, a timing controller (T / C) 1010, a row decoder 1020, and an output circuit 1030. The image sensor 1000 may be a charge coupled device (CCD) image sensor or a complementary metal oxide semiconductor (CMOS) image sensor.

[0063] The pixel array 1100 includes pixels arranged in a plurality of rows and columns in a two-dimensional manner. The row decoder 1020 selects one of the rows in the pixel array 1100 in response to the row address signal output from the timing controller 1010. The output circuit 1030 outputs the photosensitive signals from the plurality of pixels arranged in the selected row in units of rows. To this end, the output circuit 1030 may include a column decoder and an analog-to-digital converter (ADC). For example, the output circuit 1030 may include a plurality of ADCs respectively arranged to the columns between the column decoder and the pixel array 1100, or an ADC arranged at the output end of the column decoder. The timing controller 1010, the row decoder 1020, and the output circuit 1030 may be implemented as one chip or in a separate chip. A processor for processing an image signal output from the output circuit 1030 may be implemented as one chip together with the timing controller 1010, the row decoder 1020, and the output circuit 1030.

[0064] The pixel array 1100 may include a plurality of pixels that sense light of different wavelengths. The pixel arrangement may be implemented in various ways. For example, FIG. 2A to FIG. 2C Various pixel arrangements in pixel array 1100 of image sensor 1000 are shown.

[0065] Figure 2A 1 shows an arrangement of a Bayer pattern that may be used in image sensor 1000. Figure 2A, a unit pixel pattern includes four quadrant areas, and the first to fourth quadrants may be blue pixels B, green pixels G, red pixels R, and green pixels G, respectively. The unit pixel pattern is repeatedly arranged two-dimensionally in a first direction (X direction) and a second direction (Y direction) perpendicular to the first direction. In other words, in a 2×2 array of unit pixel patterns, two green pixels G are arranged in one diagonal direction, and one blue pixel B and one red pixel R are arranged in another diagonal direction. In the entire pixel arrangement, the first row and the second row are repeatedly arranged in the second direction, in the first row, a plurality of green pixels G and a plurality of blue pixels B are alternately arranged in the first direction, and in the second row, a plurality of red pixels R and a plurality of green pixels G are alternately arranged in the first direction.

[0066] The pixel array 1100 may have various arrangement patterns other than the Bayer pattern. Figure 2B , a red-yellow-blue (RYB) arrangement can be used, in which a yellow pixel Y is used instead of a green pixel G in the Bayer pattern. Figure 2C , a cyan-magenta-yellow (CMY) arrangement may be used, in which a cyan pixel C, a magenta pixel M, and two yellow pixels Y form a unit pixel pattern. FIG. 2A to FIG. 2C In the arrangement shown, the number of some color channels in a unit pixel pattern can be twice the number of other color channels. Figure 2A In the RGB Bayer pattern shown, the green channel is twice as large as the red or blue channel. Figure 2B In the RYB arrangement shown, the yellow channel can double as either the red or blue channel. Figure 2C In the CMY arrangement shown, the yellow channel is twice as large as the cyan or magenta channel.

[0067] In the following, the pixel array 1100 of the image sensor 1000 is described as having Figure 2A An example of a Bayer pattern structure is shown, but the operating principles can be applied identically to Figure 2B or Figure 2C Other types of pixel arrangements are shown.

[0068] Figure 3A and Figure 3B is a cross-sectional view schematically illustrating a structure of a pixel array 1100 in an image sensor 1000 according to example embodiments. Figure 3A A cross section of the pixel array 1100 taken along a first direction (X direction) is shown, and Figure 3B It shows that along the second direction (Y direction) Figure 3A1 and 11. A cross section of the pixel array 1100 taken along the first direction (X direction) at different positions of the pixel array 1100.

[0069] refer to Figure 3A and Figure 3B The pixel array 1100 may include a sensor substrate 110 , a color filter layer 120 disposed on the sensor substrate 110 , a planarization layer 130 that is transparent and disposed on the color filter layer 120 , and a nanophotonic lens array 140 disposed on the planarization layer 130 .

[0070] Figure 4A It is schematically shown Figure 3A and Figure 3B FIG. 1 is a plan view of a pixel arrangement of a sensor substrate 110 in a pixel array 1100. Figure 4A , the sensor substrate 110 may include a plurality of pixels that sense incident light. For example, the sensor substrate 110 may include a first pixel 111, a second pixel 112, a third pixel 113, and a fourth pixel 114 that convert incident light into an electrical signal and generate an image signal. The first pixel 111, the second pixel 112, the third pixel 113, and the fourth pixel 114 may form a unit pixel pattern. In the sensor substrate 110, a plurality of unit pixel patterns each including the first pixel 111, the second pixel 112, the third pixel 113, and the fourth pixel 114 may be periodically repeated and two-dimensionally arranged in a first direction (X direction) and a second direction (Y direction). For example, a plurality of first pixels 111 and a plurality of second pixels 112 may be alternately arranged in a first direction, and a plurality of third pixels 113 and a plurality of fourth pixels 114 may be alternately arranged in the first direction on cross sections that are differently positioned in a second direction perpendicular to the first direction. In addition, the plurality of first pixels 111 and the plurality of fourth pixels 114 may be arranged in a first diagonal direction, and the plurality of second pixels 112 and the plurality of third pixels 113 may be arranged in a second diagonal direction crossing the first diagonal direction.

[0071] In an example, the first pixel 111 and the fourth pixel 114 may be green pixels that sense green light, the second pixel 112 may be a blue pixel that senses blue light, and the third pixel 113 may be a red pixel that senses red light. In another example, the first pixel 111 and the fourth pixel 114 may be yellow pixels that sense yellow light, the second pixel 112 may be a blue pixel that senses blue light, and the third pixel 113 may be a red pixel that senses red light. In another example, the first pixel 111 and the fourth pixel 114 may be yellow pixels that sense yellow light, the second pixel 112 may be a cyan pixel that senses cyan light, and the third pixel 113 may be a magenta pixel that senses magenta light. Therefore, the first pixel 111 and the fourth pixel 114 arranged in one unit pixel pattern may form the same color channel.

[0072] In an example, each of the first to fourth pixels 111, 112, 113, and 114 may include one photosensitive unit. For example, each of the first to fourth pixels 111, 112, 113, and 114 may include one photodiode.

[0073] Figure 4B It is schematically shown Figure 3A and Figure 3B FIG. 1 is a plan view of another pixel arrangement of the sensor substrate 110 in the pixel array 1100 of FIG. Figure 4B , each of the first to fourth pixels 111, 112, 113, and 114 may include a plurality of photosensitive units that independently sense incident light. In this case, each of the first to fourth pixels 111, 112, 113, and 114 may include a plurality of photodiodes. For example, each of the first to fourth pixels 111, 112, 113, and 114 may include a first to fourth photosensitive unit C1, C2, C3, and C4. The first to fourth photosensitive units C1, C2, C3, and C4 may be two-dimensionally arranged in the first direction and the second direction. For example, in each of the first to fourth pixels 111, 112, 113, and 114, the first to fourth photosensitive units C1, C2, C3, and C4 may be arranged in a 2×2 array.

[0074] Figure 4B An example in which each of the first to fourth pixels 111, 112, 113, and 114 includes four photosensitive units is shown, but the embodiment is not limited thereto, and for example, four or more independent photosensitive units may be grouped and arranged two-dimensionally. For example, each of the first to fourth pixels 111, 112, 113, and 114 may include a plurality of independent photosensitive units grouped and arranged in a 3×3 array or a 4×4 array. Hereinafter, for ease of description, an example in which each of the first to fourth pixels 111, 112, 113, and 114 includes photosensitive units arranged in a 2×2 array will be described.

[0075] When each of the first to fourth pixels 111, 112, 113, and 114 includes a plurality of photosensitive cells, an automatic focus signal may be obtained according to a difference between output signals from adjacent photosensitive cells. For example, an automatic focus signal in a first direction may be generated according to a difference between output signals from the first photosensitive cell C1 and the second photosensitive cell C2, a difference between output signals from the third photosensitive cell C3 and the fourth photosensitive cell C4, or a difference between the sum of output signals from the first photosensitive cell C1 and the third photosensitive cell C3 and the sum of output signals from the second photosensitive cell C2 and the fourth photosensitive cell C4. In addition, an automatic focus signal in a second direction may be generated according to a difference between output signals from the first photosensitive cell C1 and the third photosensitive cell C3, a difference between output signals from the second photosensitive cell C2 and the fourth photosensitive cell C4, or a difference between the sum of output signals from the first photosensitive cell C1 and the second photosensitive cell C2 and the sum of output signals from the third photosensitive cell C3 and the fourth photosensitive cell C4.

[0076] The overall image signal may be obtained according to the sum of the output signals from the first to fourth photosensitive cells C1, C2, C3, and C4. For example, a first green image signal may be generated by summing the output signals from the first to fourth photosensitive cells C1, C2, C3, and C4 from the first pixel 111, a blue image signal may be generated by summing the output signals from the first to fourth photosensitive cells C1, C2, C3, and C4 from the second pixel 112, a red image signal may be generated by summing the output signals from the first to fourth photosensitive cells C1, C2, C3, and C4 from the third pixel 113, and a second green image signal may be generated by summing the output signals from the first to fourth photosensitive cells C1, C2, C3, and C4 from the fourth pixel 114.

[0077] In addition, each of the first to fourth pixels 111, 112, 113, and 114 may include an isolation portion DTI that electrically isolates a plurality of photosensitive units from each other. For example, the isolation portion DTI may have a deep trench isolation structure. For example, the deep trench may be filled with air or an electrically insulating material. The isolation portion DTI may extend in the first direction and the second direction so as to divide each of the first to fourth pixels 111, 112, 113, and 114 into four regions. The first to fourth photosensitive units C1, C2, C3, and C4 in each of the first to fourth pixels 111, 112, 113, and 114 may be isolated from each other by the isolation portion DTI. The isolation portion DTI extending in the first direction and the isolation portion DTI extending in the second direction may intersect each other at the center of each of the first to fourth pixels 111, 112, 113, and 114.

[0078] In addition, the isolation portion DTI may be disposed in the first direction and the second direction between adjacent pixels among the first to fourth pixels 111, 112, 113, and 114. Therefore, the first to fourth pixels 111, 112, 113, and 114 may be isolated from each other due to the isolation portion DTI. The isolation portion DTI extending in the first direction and the isolation portion DTI extending in the second direction may cross each other at the center of the unit pixel pattern including the first to fourth pixels 111, 112, 113, and 114.

[0079] Figure 5 It is schematically shown Figure 3A and Figure 3B FIG. 1 is a plan view of the structure of the color filter layer 120. Figure 5 , the color filter layer 120 may include a plurality of color filters disposed between the sensor substrate 110 and the nanophotonic lens array 140 so as to transmit light of a certain wavelength band and absorb light of another wavelength band. For example, the color filter layer 120 may include a first color filter 121 and a fourth color filter 124 that transmit light of a first wavelength band and absorb light of another wavelength band, a second color filter 122 that transmits light of a second wavelength band different from the first wavelength band and absorbs light of another wavelength band, and a third color filter 123 that transmits light of a third wavelength band different from the first wavelength band and the second wavelength band and absorbs light of another wavelength band.

[0080] The first color filter 121, the second color filter 122, the third color filter 123 and the fourth color filter 124 may form a unit color filter pattern. In the color filter layer 120, a plurality of unit color filter patterns each including the first color filter 121, the second color filter 122, the third color filter 123 and the fourth color filter 124 are arranged in a two-dimensional array in a regular and repeated manner in a first direction (X direction) and a second direction (Y direction). For example, a plurality of first color filters 121 and a plurality of second color filters 122 may be alternately arranged in a first direction, and a plurality of third color filters 123 and a plurality of fourth color filters 124 may be alternately arranged in the first direction on a cross section at different positions in a second direction perpendicular to the first direction. In addition, a plurality of first color filters 121 and a plurality of fourth color filters 124 may be arranged in a first diagonal direction, and a plurality of second color filters 122 and a plurality of third color filters 123 may be arranged in a second diagonal direction intersecting with the first diagonal direction.

[0081] The first color filter 121 may be disposed to face the first pixel 111 in a third direction (i.e., the Z-axis direction) perpendicular to the first and second directions, the second color filter 122 may be disposed to face the second pixel 112 in the third direction, the third color filter 123 may be disposed to face the third pixel 113 in the third direction, and the fourth color filter 124 may be disposed to face the fourth pixel 114 in the third direction. Therefore, the first pixel 111 may sense light of a first wavelength band passing through the first color filter 121 corresponding thereto. The second pixel 112 senses light of a second wavelength band passing through the corresponding second color filter 122, and the third pixel 113 senses light of a third wavelength band passing through the corresponding third color filter 123. The fourth pixel 114 may sense light of a first wavelength band passing through the fourth color filter 124 corresponding thereto.

[0082] In an example, the first color filter 121 and the fourth color filter 124 may be green filters that transmit green light, the second color filter 122 may be a blue filter that transmits blue light, and the third color filter 123 may be a red filter that transmits red light. In another example, the first color filter 121 and the fourth color filter 124 may be yellow filters that transmit yellow light, the second color filter 122 may be a blue filter, and the third color filter 123 may be a red filter. In another example, the first color filter 121 and the fourth color filter 124 may be yellow filters, the second color filter 122 may be a cyan filter that transmits cyan light, and the third color filter 123 may be a magenta filter that transmits magenta light.

[0083] When each of the first to fourth pixels 111, 112, 113, and 114 includes a plurality of photosensitive cells, the first to fourth color filters 121, 122, 123, and 124 may be arranged to face all the photosensitive cells in the corresponding first to fourth pixels 111, 112, 113, and 114 in the third direction. For example, the first color filter 121 faces and covers all the photosensitive cells in the first pixel 111, the second color filter 122 faces and covers all the photosensitive cells in the second pixel 112, the third color filter 123 faces and covers all the photosensitive cells in the third pixel 113, and the fourth color filter 124 faces and covers all the photosensitive cells in the fourth pixel 114.

[0084] For example, the first to fourth color filters 121, 122, 123, and 124 in the color filter layer 120 may be formed of an organic polymer material. For example, the first to fourth color filters 121, 122, 123, and 124 may include a colorant, an adhesive resin, a polymer photoresist, and the like. For example, the first color filter 121 and the fourth color filter 124 may be organic color filters including a green organic dye or a green organic pigment as a colorant, the second color filter 122 may be an organic color filter including a blue organic dye or a blue organic pigment as a colorant, and the third color filter 123 may be an organic color filter including a red organic dye or a red organic pigment as a colorant. According to example embodiments, the color filter layer 120 may further include a black matrix disposed at the boundary between the first to fourth color filters 121, 122, 123, and 124. For example, the black matrix may include carbon black.

[0085] Return to reference Figure 3A and Figure 3B , the planarization layer 130 disposed between the color filter layer 120 and the nanophotonic lens array 140 can provide a flat surface for forming the nanophotonic lens array 140 on the planarization layer 130. The planarization layer 130 may include an organic polymer material that is suitable for stacking on the color filter layer 120 formed of an organic material and can more easily form a flat surface. The organic polymer material forming the planarization layer 130 may be transparent with respect to visible light. For example, the planarization layer 130 may include at least one organic polymer material of epoxy resin, polyimide, polycarbonate, polyacrylate, and polymethyl methacrylate (PMMA). For example, the planarization layer 130 may be formed on the color filter layer 120 by a spin coating method, and may have a flat upper surface by heat treatment.

[0086] The nanophotonic lens array 140 may be disposed on the planarization layer 130 . Figure 3A and Figure 3BIt is shown that the nanophotonic lens array 140 is directly disposed on the planarization layer 130, but a protective layer for preventing damage to the planarization layer 130 formed of an organic polymer material during the process of forming the nanophotonic lens array 140 may be disposed on the planarization layer 130, and then, the nanophotonic lens array 140 may be disposed on the protective layer. In addition, in order to protect the planarization layer 130 while forming the nanophotonic lens array 140, an etch stop layer may be further disposed between the planarization layer 130 and the nanophotonic lens array 140.

[0087] The nanophotonic lens array 140 can be configured to perform color separation on the incident light. For example, the nanophotonic lens array 140 can separate the light of the first band (e.g., green light), the light of the second band (e.g., blue light), and the light of the third band (e.g., red light) from the incident light, and allow the separated light to travel in different channels. In addition, the nanophotonic lens array 140 can be configured to be used as a lens to converge the color-separated light of the first band, the light of the second band, and the light of the third band onto the pixel. Specifically, the nanophotonic lens array 140 can be configured to converge the light of the first band onto the first pixel 111 and the fourth pixel 114 in the incident light, converge the light of the second band onto the second pixel 112, and converge the light of the third band onto the third pixel 113.

[0088] In order to converge light as described above, the nanophotonic lens array 140 may include a plurality of nanostructures NP periodically arranged according to a certain rule. In addition, the nanophotonic lens array 140 may further include a dielectric layer DL filled between the plurality of nanostructures NP. In order for the nanophotonic lens array 140 to perform the above functions, the plurality of nanostructures NP of the nanophotonic lens array 140 may be formed differently.

[0089] Figure 6 It shows Figure 3A and Figure 3B FIG. 1 is a plan view of an example of a unit cell pattern in the nanophotonic lens array 140. Figure 6, the nanophotonic lens array 140 includes a first element region 141 corresponding to the first pixel 111, a second element region 142 corresponding to the second pixel 112, a third element region 143 corresponding to the third pixel 113, and a fourth element region 144 corresponding to the fourth pixel 114. The first element region 141 may be arranged to face the first pixel 111 in the third direction, the second element region 142 may be arranged to face the second pixel 112 in the third direction, the third element region 143 may be arranged to face the third pixel 113 in the third direction, and the fourth element region 144 may be arranged to face the fourth pixel 114 in the third direction. In one unit element pattern, the first element region 141 and the fourth element region 144 may be arranged in a first diagonal direction, and the second element region 142 and the third element region 143 may be arranged in a second diagonal direction.

[0090] Figure 6 Only one unit element pattern is shown as an example, but a plurality of first element regions 141 and a plurality of second element regions 142 may be alternately arranged in the first direction, and a plurality of third element regions 143 and a plurality of fourth element regions 144 may be alternately arranged in the first direction on cross sections at different positions in a second direction perpendicular to the first direction. For example, the nanophotonic lens array 140 may include a plurality of unit element patterns periodically and two-dimensionally arranged in the first direction and the second direction. The pattern period or lattice constant of the plurality of unit element patterns in the nanophotonic lens array 140 may be equal to the pattern period or lattice constant of the plurality of unit pixel patterns in the sensor substrate 110.

[0091] The nanophotonic lens array 140 may include a plurality of nanostructures NPs, which are respectively arranged two-dimensionally in the first to fourth element regions 141, 142, 143, and 144, so as to perform color separation on the incident light and converge the separated light. The plurality of nanostructures NPs may be arranged so that the phase of the light transmitted through the nanophotonic lens array 140 varies according to the position on the nanophotonic lens array 140. The phase profile of the transmitted light achieved by the nanophotonic lens array 140 may be determined according to the cross-sectional size (e.g., width or diameter), cross-sectional shape and height of each nanostructure NP, and the arrangement period (or spacing) and arrangement type of the plurality of nanostructures NPs. In addition, the behavior of the light passing through the nanophotonic lens array 140 may be determined according to the phase profile of the transmitted light. For example, the plurality of nanostructures NPs may be arranged to form a phase profile that allows the light transmitted through the nanophotonic lens array 140 to be separated and converged according to the wavelength.

[0092] The nanostructure NP may each have a size smaller than the wavelength of visible light. For example, the nanostructure NP may have a size smaller than the wavelength of blue light. For example, the cross-sectional width (or diameter) of the nanostructure NP may be less than 400nm, 300nm, or 200nm, and may be greater than about 80nm. The height of the nanostructure NP may be from about 500nm to about 1500nm, and may be greater than the cross-sectional width of the nanostructure NP.

[0093] The nanostructured NP may include a material having a relatively higher refractive index and a relatively lower absorptivity in the visible light band than the surrounding material. For example, the nanostructured NP may include c-Si, p-Si, a-Si, and III-V compound semiconductors (gallium phosphide (GaP), gallium nitride (GaN), gallium arsenide (GaAs), etc.), silicon carbide (SiC), titanium oxide (TiO 2 ), silicon nitride (SiN 3 )、ZnS、ZnSe、Si 3 N 4 The periphery of the nanostructure NP may be filled with a dielectric layer DL, which has a relatively lower refractive index than the nanostructure NP and a relatively lower absorptivity in the visible light band. For example, the dielectric layer DL may be filled with siloxane-based spin-on glass (SOG), silicon oxide (SiO 2 )、Si 3 N 4 、Alumina (Al 2 O 3 ), air, etc.

[0094] The refractive index of the nanostructure NP can be about 2.0 or more relative to light of about 630nm wavelength, and the refractive index of the dielectric layer DL can be about 1.0 to about 2.0 or less relative to light of about 630nm wavelength. In addition, the difference between the refractive index of the nanostructure NP and the refractive index of the dielectric layer DL can be about 0.5 or more. The nanostructure NP having a refractive index different from that of the peripheral material can change the phase of the light passing through the nanostructure NP. The phase change can be caused by the phase delay caused by the sub-wavelength shape size of the nanostructure NP, and the degree of phase delay can be determined by the detailed shape size and arrangement shape of the nanostructure NP.

[0095] exist Figure 6In the example shown, a plurality of nanostructure NPs having different cross-sectional sizes may be arranged in each of the first meta region 141, the second meta region 142, the third meta region 143, and the fourth meta region 144. In the first meta region 141, the second meta region 142, the third meta region 143, and the fourth meta region 144, the arrangement types of the plurality of nanostructure NPs may be different from each other. In the second meta region 142 and the third meta region 143, the plurality of nanostructure NPs may be arranged with 4-fold symmetry. For example, in the second meta region 142 and the third meta region 143, the plurality of nanostructure NPs may be arranged to be symmetrical in all directions of the first direction (or horizontal direction), the second direction (or vertical direction), and the two diagonal directions. In the first meta region 141 and the fourth meta region 144, the plurality of nanostructure NPs may be arranged with 2-fold symmetry. For example, in the first meta region 141 and the fourth meta region 144, the plurality of nanostructure NPs may be arranged to be symmetrical in both the first direction (or horizontal direction) and the second direction (or vertical direction). For example, the arrangement type of the plurality of nanostructures NPs in the fourth meta region 144 may be rotated by 90 degrees relative to the arrangement type of the plurality of nanostructures NPs in the first meta region 141 .

[0096] Figure 6 An example of the configuration of the nanophotonic lens array 140 is shown, and the nanophotonic lens array 140 may be formed to Figure 6 Various shapes other than the examples shown. For example, in each of the first meta region 141, the second meta region 142, the third meta region 143, and the fourth meta region 144, the cross-sectional size and arrangement type of the plurality of nanostructured NPs may be selected differently. However, the following items may be constantly maintained: the arrangement types of the plurality of nanostructured NPs in the second meta region 142 and the third meta region 143 are different from each other, the plurality of nanostructured NPs are arranged in 4-fold symmetry in the second meta region 142 and the third meta region 143, the plurality of nanostructured NPs are arranged in 2-fold symmetry in the first meta region 141 and the fourth meta region 144, and the arrangement type of the plurality of nanostructured NPs in the first meta region 141 is rotated 90 degrees relative to the arrangement type of the plurality of nanostructured NPs in the fourth meta region 144.

[0097] exist Figure 6, the nanostructure NP is shown as having a cylindrical shape, but the cross-sectional shape of the nanostructure NP is not limited thereto. For example, depending on the configuration of the nanophotonic lens array 140, the nanostructure NP may be formed into a columnar shape having various cross-sectional shapes (e.g., a rectangular shape, a triangular shape, a cross shape, or an elliptical shape). When the cross-sectional shape of the nanostructure NP is a polygonal or elliptical shape, the cross-sectional size of the nanostructure NP may be defined as the maximum width in the nanostructure NP. Therefore, the cross-sectional size of the nanostructure NP indicates a diameter when the cross-sectional shape of the nanostructure NP is a circle, and indicates a maximum width of the nanostructure NP when the cross-sectional shape of the nanostructure NP is a polygonal or elliptical shape. In addition, the nanostructure NP is shown as having a cylindrical shape. Figure 6 Grid lines indicated by solid lines in the first meta-region 141, the second meta-region 142, the third meta-region 143 and the fourth meta-region 144 are provided to clearly express the positions of the nanostructures, and the grid lines have nothing to do with the actual structures of the first to fourth meta-regions 141, 142, 143 and 144.

[0098] The first meta region 141 may include a plurality of nanostructures arranged along a vertical center line Ly, and a plurality of pairs at different distances from a horizontal center line Lx in the second direction, each pair having two nanostructures symmetrically arranged in the first direction. The horizontal center line Lx may be defined as a straight line passing through the center of the first meta region 141 in the first direction, and the vertical center line Ly may be defined as a straight line passing through the center of the first meta region 141 in the second direction.

[0099] For example, the first meta-region 141 may include a first nanostructure NP1 arranged along a vertical center line Ly, second and third nanostructures NP2a and NP2b arranged symmetrically in the first direction relative to the vertical center line Ly, and fourth and fifth nanostructures NP3a and NP3b arranged symmetrically in the first direction relative to the vertical center line Ly.

[0100] The second nanostructure NP2a and the third nanostructure NP2b may be spaced apart from each other at a first interval ΔS in the first direction. 1 The fourth nanostructure NP3a and the fifth nanostructure NP3b may be separated in the first direction by a second interval ΔS. 2 The first interval ΔS 1 and the second interval ΔS 2 It may fall within the range of L / 8 to 3L / 8, where L represents the side length of the first element region 141. The second interval ΔS 2 Can be greater than the first interval ΔS 1 .

[0101] From the horizontal center line Lx to the second interval ΔS 2The distance d between the fourth nanostructure NP3a and the fifth nanostructure NP3b is 2 is smaller than the distance d from the horizontal center line Lx to the pair of the second nanostructure NP2a and the third nanostructure NP2b. 1 , so that when the interval between the paired nanostructures increases, the distance d from the horizontal center line Lx to the nanostructure pair decreases.

[0102] In the following, a description is provided under the assumption that the light of the first wavelength band is green light, the light of the second wavelength band is blue light, and the light of the third wavelength band is red light. However, one or more embodiments are not limited thereto. For example, the light of the first wavelength band may be yellow light, the light of the second wavelength band may be blue light, and the light of the third wavelength band may be red light. According to another example embodiment, the light of the first wavelength band may be yellow light, the light of the second wavelength band may be cyan light, and the light of the third wavelength band may be magenta light.

[0103] Figure 7 It shows that green and blue light pass through Figure 6 FIG. 1 is an example of a phase profile after the nanophotonic lens array 140. Figure 7 , the green light may have a first green light phase profile PPG1 after passing through the nanophotonic lens array 140, the first green light phase profile PPG1 being maximum at the center of the first element region 141 and decreasing as it moves away from the center of the first element region 141. For example, at a position immediately after passing through the nanophotonic lens array 140 (i.e., on the lower surface of the nanophotonic lens array 140), the phase of the green light is maximum at the center of the first element region 141 and may decrease in the form of concentric circles as it moves away from the center of the first element region 141.

[0104] The blue light passing through the nanophotonic lens array 140 may have a blue light phase profile PPB that is maximum at the center of the second element region 142 and decreases as it moves away from the center of the second element region 142. For example, at a position immediately after passing through the nanophotonic lens array 140 (i.e., on the lower surface of the nanophotonic lens array 140), the phase of the blue light is maximum at the center of the second element region 142 and may decrease in the form of concentric circles as it moves away from the center of the second element region 142.

[0105] Thus, among the incident light incident on the first element region 141 and the incident light incident on a portion of the second element region 142 and a portion of the third element region 143 around the first element region 141, green light may be converged to the pixel corresponding to the first element region 141 by the nanophotonic lens array 140. In addition, among the incident light incident on the second element region 142 and the incident light incident on a portion of the first element region 141, a portion of the third element region 143, and a portion of the fourth element region 144 around the second element region 142, blue light may be converged to the pixel corresponding to the second element region 142 by the nanophotonic lens array 140.

[0106] Figure 8 It shows that red and green light pass through Figure 6 FIG. 1 is an example of a phase profile after the nanophotonic lens array 140. Figure 8 , the red light may have a red light phase profile PPR after passing through the nanophotonic lens array 140, which is maximum at the center of the third element region 143 and decreases as it moves away from the center of the third element region 143. For example, at a position immediately after passing through the nanophotonic lens array 140, the phase of the red light may be maximum at the center of the third element region 143 and may decrease in the form of concentric circles as it moves away from the center of the third element region 143.

[0107] The green light passing through the nanophotonic lens array 140 may have a second green light phase profile PPG2 that is maximum at the center of the fourth element region 144 and decreases as it moves away from the center of the fourth element region 144. Except that the second green light phase profile PPG2 has a maximum phase at the center of the fourth element region 144, the description related to the first green light phase profile PPG1 may also be applicable to the second green light phase profile PPG2.

[0108] Thus, among the incident light incident on the third element region 143 and the incident light incident on a portion of the first element region 141, a portion of the second element region 142, and a portion of the fourth element region 144 around the third element region 143, red light may be converged to the pixel corresponding to the third element region 143 by the nanophotonic lens array 140. In addition, among the incident light incident on the fourth element region 144 and the incident light incident on a portion of the second element region 142 and a portion of the third element region 143 around the fourth element region 144, green light may be converged to the pixel corresponding to the fourth element region 144 by the nanophotonic lens array 140.

[0109] Therefore, the nanophotonic lens array 140 can focus green light on pixels corresponding to the first element region 141 and the fourth element region 144, focus blue light on pixels corresponding to the second element region 142, and focus red light on pixels corresponding to the third element region 143, among incident light. Thus, incident light can be separated according to wavelengths by the nanophotonic lens array 140 without loss, and can be focused on pixels.

[0110] Fig. 9 is a diagram showing an example of an array of green light converging regions formed by the nanophotonic lens array 140. Fig. 9 , referenced above Figure 7 and Figure 8 The described phase profile of green light can converge the green light onto the pixels corresponding to the first element region 141 and the fourth element region 144, wherein the green light passes through the green light convergence region GL obtained by connecting the centers of the two second element regions 142 to the centers of the two third element regions 143, which are adjacent to the first element region 141 and the fourth element region 144 while contacting one side thereof. Therefore, as Fig. 9 As shown, the nanophotonic lens array 140 may be used as an array of green light focusing regions GL that focus green light onto pixels corresponding to the first and fourth element regions 141 and 144. For example, the green light focusing region GL may have an area 1.2 to 2 times that of the corresponding pixel.

[0111] Fig.10 is a diagram showing an example of an array of blue light concentrating regions formed by the nanophotonic lens array 140. Fig.10 , according to reference Figure 7 According to the phase profile of blue light described above, the blue light passing through the blue light focusing area BL obtained by connecting the centers of four third element areas 143 adjacent to the second element area 142 at the vertices of the second element area 142 can be focused on the pixel corresponding to the second element area 142. Fig.10 As shown, the nanophotonic lens array 140 may be used as an array of blue light converging regions BL that converge blue light onto pixels corresponding to the second element regions 142. For example, the blue light converging regions BL may have an area 1.5 to 4 times the area of ​​the corresponding pixel. The blue light converging regions BL may partially overlap a portion of the green light converging regions GL and a portion of the red light converging regions RL described later.

[0112] Fig.11 is a diagram showing an example of an array of red light converging regions formed by the nanophotonic lens array 140. Fig.11 , according to reference Figure 8, the red light passing through the red light converging region RL obtained by connecting the centers of the four second element regions 142 adjacent to the third element region 143 at the vertices of the third element region 143 can be converged to the pixel corresponding to the third element region 143. Fig.11 As shown, the nanophotonic lens array 140 can be used as an array of red light converging regions RL that converge red light onto pixels corresponding to the third element region 143. For example, the red light converging region RL can have an area 1.5 to 4 times the area of ​​the corresponding pixel. The red light converging region RL can partially overlap a portion of the green light converging region GL and a portion of the blue light converging region BL.

[0113] According to the embodiment, since the above-mentioned nanophotonic lens array 140 can separate incident light by wavelength and converge the separated light without absorbing or blocking the incident light, the light utilization efficiency of the image sensor can be improved. In addition, since the incident light is color-separated to a certain extent by the nanophotonic lens array 140, even when the color filter layer 120 is used, the absorption loss caused by the color filter layer 120 can be relatively low. In addition, since the nanophotonic lens array 140 and the color filter layer 120 are used together, the color purity can be improved.

[0114] In addition, as described above, in the nanophotonic lens array 140, the first element region 141 and the fourth element region 144 have nanostructure arrangements that are rotated at an angle of 90 degrees relative to each other. Therefore, the light spot of the light that passes through the nanophotonic lens array 140 and converges on the first pixel 111 corresponding to the first element region 141, and the light spot of the light that converges on the fourth pixel 114 corresponding to the fourth element region 144 can be rotated at an angle of 90 degrees relative to each other. Therefore, the signals output from the first pixel 111 and the fourth pixel 114 of two same color channels forming one unit pixel pattern can be different from each other. For example, the auto focus (AF) characteristics of the first pixel 111 and the fourth pixel 114 can be different from each other, and the modulation transfer function (MTF) characteristics of the first pixel 111 and the fourth pixel 114 can be different from each other.

[0115] The image processing algorithm of the image sensor according to the related art assumes that two identical color channels in one unit pixel pattern have the same characteristics. Therefore, in order to apply the general image processing algorithm to the image sensor 1000 according to the example embodiment, it is advantageous when the difference between the signals output from the first pixel 111 and the fourth pixel 114 in one unit pixel pattern is reduced. To this end, although the first element region 141 and the fourth element region 144 have a 2-fold symmetrical structure, the cross-sectional size and arrangement type of the plurality of nanostructures NP in the first element region 141 and the fourth element region 144 can be configured so that the shapes of the light spots formed on the first pixel 111 and the fourth pixel 114, respectively, are close to 4-fold symmetry.

[0116] Return to reference Figure 6 , the first element region 141 may include a plurality of nanostructures arranged on the vertical center line Ly, and a plurality of pairs at different distances from the horizontal center line Lx in the second direction, each pair having two nanostructures arranged symmetrically in the first direction. For example, the first element region 141 may include a first nanostructure NP1 arranged on the vertical center line Ly, a second nanostructure NP2a and a third nanostructure NP2b arranged symmetrically with respect to the vertical center line Ly in the first direction, and a fourth nanostructure NP3a and a fifth nanostructure NP3b arranged symmetrically with respect to the vertical center line Ly in the first direction. The second nanostructure NP2a and the third nanostructure NP2b may be arranged to be adjacent to the edge of the first element region 141 in the second direction, and the fourth nanostructure NP3a and the fifth nanostructure NP3b may be arranged to be adjacent to the center of the first element region 141 in the second direction. For example, the distance between the second nanostructure NP2a and the third nanostructure NP2b and the horizontal center line Lx in the second direction may be greater than the distance between the fourth nanostructure NP3a and the fifth nanostructure NP3b and the horizontal center line Lx in the second direction. Here, the horizontal center line Lx may be defined as a straight line passing through the center of the first meta region 141 in the first direction, and the vertical center line Ly may be defined as a straight line passing through the center of the first meta region 141 in the second direction.

[0117] The first meta region 141 may further include a plurality of nanostructures arranged symmetrically with the first to fifth nanostructures NP1, NP2a, NP2b, NP3a, and NP3b based on the horizontal center line Lx in the second direction. Hereinafter, only the first to fifth nanostructures NP1, NP2a, NP2b, NP3a, and NP3b arranged above the horizontal center line Lx are described. Because the first meta region 141 has a symmetrical shape based on the horizontal center line Lx, the description related to the first to fifth nanostructures NP1, NP2a, NP2b, NP3a, and NP3b may be applicable to the plurality of nanostructures arranged below the horizontal center line Lx.

[0118] Furthermore, the fourth meta region 144 is the same as the first meta region 141 except that the fourth meta region 144 is rotated at an angle of 90 degrees relative to the first meta region 141. For example, the arrangement pattern described below for the first meta region 141 may be rotated at an angle of 90 degrees and applied to the fourth meta region 144. Therefore, the first meta region 141 is described below, and the description related to the fourth meta region 144 is omitted.

[0119] The first nanostructure NP1 may have a first cross-sectional size w1, the second nanostructure NP2a and the third nanostructure NP2b may have a second cross-sectional size w2, and the fourth nanostructure NP3a and the fifth nanostructure NP3b may have a third cross-sectional size w3. In addition, the second nanostructure NP2a and the third nanostructure NP2b may be spaced apart in the first direction at a first interval ΔS 1 and the fourth nanostructure NP3a and the fifth nanostructure NP3b may be arranged at a second interval ΔS in the first direction. 2 According to the embodiment, by appropriately selecting the relationship between the first cross-sectional dimension w1, the second cross-sectional dimension w2 and the third cross-sectional dimension w3, and the first interval ΔS 1 and the second interval ΔS 2 , the light spots respectively formed on the first pixel 111 and the fourth pixel 114 may have shapes close to 4-fold symmetry, and thus, the difference between signals output from the first pixel 111 and the fourth pixel 114 in one unit pixel pattern may be reduced or minimized.

[0120] Fig.12 is a graph showing an example of a relationship between various geometric shapes of a plurality of nanostructures of the nanophotonic lens array 140 and a difference in AF characteristics of the first pixel 111 and the fourth pixel 114 in one unit pixel pattern. Fig.12In the graph of FIG. 1 , the horizontal axis represents the ratio of the first cross-sectional dimension w1 to the average value of the second cross-sectional dimension w2 and the third cross-sectional dimension w3 among various optimization parameters of the plurality of nanostructures (hereinafter, referred to as CD ratio), and the vertical axis represents the difference between the contrast ratio of the AF signal of the first pixel 111 and the contrast ratio of the AF signal of the fourth pixel 114 (hereinafter, referred to as "AF_score"). When the value of the vertical axis is "0", the AF signal of the first pixel 111 and the AF signal of the fourth pixel 114 are the same. The AF_score may be defined by the following Formula 1.

[0121] [Formula 1]

[0122]

[0123] In the above formula 1, AF Gb represents the contrast ratio of the AF signal of the first pixel 111, and AF Gr represents the contrast ratio of the AF signal of the fourth pixel 114 .

[0124] refer to Fig.12 , although there may be fluctuations in the values ​​of other parameters besides the cross-sectional size of the nanostructures, it can be recognized that there is a linear relationship between the CD ratio and the AF_score. For example, the CD ratio and the AF_score may have a linear relationship with a least squares correlation coefficient (r) of about 0.85. When the CD ratio is about 0.74, the AF_score is close to zero, and as the CD ratio increases, the AF_score increases. Consider Fig.12 As a result, the average values ​​of the second cross-sectional size w2 and the third cross-sectional size w3 may be greater than the first cross-sectional size w1. This is because when the nanostructures having a larger cross-sectional size on average are located at the periphery of the first element region 141 in the first direction, the transmitted light is guided in the first direction, and the light spot formed on the first pixel 111 is expanded in the first direction, so that the light spot may be formed into a shape close to a circle. However, when the average cross-sectional size of the nanostructures located at the periphery of the first element region 141 in the first direction is too large, the difference between the AF characteristics of the first pixel 111 and the fourth pixel 114 may be too large to use a general image processing algorithm.

[0125] In view of this, the CD ratio may be selected to be about 0.85 or less, about 0.7 to about 0.85, about 0.74 to about 0.85, or about 0.74 to about 0.8. For example, the ratio of the first cross-sectional dimension w1 to the average of the second cross-sectional dimension w2 and the third cross-sectional dimension w3 may be about 0.85 or less, about 0.7 to about 0.85, about 0.74 to about 0.85, about 0.7 to about 0.8, or about 0.74 to about 0.8. When a plurality of nanostructures having different cross-sectional dimensions are arranged on the vertical center line Ly in the second direction, the first cross-sectional dimension w1 may be the average of the cross-sectional dimensions of the plurality of nanostructures. Therefore, a ratio of an average cross-sectional dimension of at least one nanostructure on the vertical center line Ly in the first meta-region 141 to an average cross-sectional dimension of a plurality of nanostructures symmetrically arranged in the first meta-region 141 in the first direction relative to the vertical center line Ly is about 0.85 or less, about 0.7 to about 0.85, about 0.74 to about 0.85, or about 0.74 to about 0.8.

[0126] Fig.13 is a graph showing an example of the relationship between various geometric shapes of the plurality of nanostructures of the nanophotonic lens array 140 and the difference in MTF characteristics of the first pixel 111 and the fourth pixel 114 in one unit pixel pattern. Fig.13 In the graph of FIG. 1 , the horizontal axis represents the second interval ΔS among various optimized parameters of the plurality of nanostructures. 2 Relative to the first interval ΔS 1 The ratio (ΔS 2 / ΔS 1 ), and the vertical axis represents the difference (hereinafter, MTF_score) between the MTF value of the first pixel 111 and the MTF value of the fourth pixel 114. When the value of the vertical axis is "0", it can be considered that the MTF characteristics of the first pixel 111 and the MTF characteristics of the fourth pixel 114 are the same. MTF_score can be defined by the following formula 2.

[0127] [Formula 2]

[0128]

[0129] In the above formula 2, MTF Gb represents the MTF value of the first pixel 111, and MTF Gr represents the MTF value of the fourth pixel 114.

[0130] refer to Fig.13 , although there may be fluctuations depending on the values ​​of other parameters besides the interval, it is possible to identify ΔS 2 / ΔS 1There is a negative (-) linear relationship between ΔS and MTF_score. For example, 2 / ΔS 1 and MTF_score may have a negative linear relationship with a least squares correlation coefficient (r) of about -0.82. 2 / ΔS 1 When the value of is about 1.12, MTF_Score is close to 0, and as ΔS 2 / ΔS 1 As the value of becomes greater or less than approximately 1.12, the MTF_Score deviates further from zero.

[0131] consider Fig.13 As a result, the second interval ΔS between the fourth nanostructure NP3a and the fifth nanostructure NP3b 2 may be greater than the first interval ΔS between the second nanostructure NP2a and the third nanostructure NP2b. 1 . For example, the interval between the two symmetrical nanostructures in the first direction increases as they approach the horizontal center line Lx in the second direction, and the interval between the two symmetrical nanostructures may decrease as they move away from the horizontal center line Lx in the second direction. According to another example embodiment, the interval between the two symmetrical nanostructures may further decrease in the second direction toward the edge of the first meta-region 141. Therefore, the interval in the first direction between the two nanostructures symmetrically arranged on the horizontal center line Lx in the first direction may be the largest. Thus, the center of the light spot further expands in the first direction, and thus, the light spot may be closer to a spherical shape.

[0132] exist Fig.13 In the example, when ΔS 2 / ΔS 1 When the value of is about 1.12, MTF_Score is 0, but the ΔS that makes MTF_Score zero is 2 / ΔS 1 The value of may vary depending on the distance between the horizontal center line Lx and the nanostructure in the second direction.

[0133] For example, when the interval in the first direction between two nanostructures symmetrically arranged on the horizontal center line Lx in the first direction is A, A may have a value of L / 8 to 3L / 8 according to the configuration of the nanophotonic lens array 140 .

[0134] The spacing ΔS in the first direction between two symmetrical nanostructures arranged at a distance d from the horizontal center line Lx in the second direction is 2may be less than A. For example, when it is assumed that the second nanostructure NP2a and the fourth nanostructure NP3a on the left side relative to the vertical center line Ly are disposed on the horizontal center line Lx within a certain distance range on the right side relative to the vertical center line Ly, and the third nanostructure NP2b and the fifth nanostructure NP3b on the right side relative to the vertical center line Ly are disposed on the horizontal center line Lx within a certain distance range on the left side relative to the vertical center line Ly, an appropriate range of the interval ΔS in the first direction between two symmetrical nanostructures arranged at a distance d from the horizontal center line Lx in the second direction may satisfy the condition defined by Formula 3 below.

[0135] [Formula 3]

[0136] 2L (0.13-0.47y 2 )<ΔS<2L(0.38-0.96y 2 -0.89y 4 -1.63y 6 )

[0137] Here, L represents the side length of the first element region 141, y=d / L, and 0<y<0.5.

[0138] Fig.14 is a plan view showing the structure of a nanophotonic lens array according to a related example. Fig.14 An example of arrangement of a plurality of nanostructures arranged in a first element region 141' of a nanophotonic lens array according to a related example is shown. In the first element region 141' of the nanophotonic lens array according to the related example, the cross-sectional size of the nanostructure NP11 arranged on the vertical center line is equal to the cross-sectional size of the plurality of nanostructures NP12a, NP12b, NP13a, and NP13b arranged symmetrically in the first direction with respect to the vertical center line. In addition, for two nanostructures NP12a and NP12b and two nanostructures NP13a and NP13b symmetrically arranged in the first direction, the interval between the two nanostructures NP12a and NP12b in the first direction, and the interval between the two nanostructures NP13a and NP13b in the first direction do not satisfy the condition defined by Formula 3 above.

[0139] Fig.15 FIG. 4 shows an example of a green light spot formed on the first pixel 111 by the nanophotonic lens array according to the related example. Fig.15, when the nanophotonic lens array according to the related example is used, the light spot of the green light formed on the first pixel 111 may have a 2-fold symmetrical shape. For example, the light spot of the green light formed on the first pixel 111 may have a 2-fold symmetrical shape that is long in the second direction. Although not shown in the drawings, the light spot of the green light formed on the fourth pixel 114 may have a 2-fold symmetrical shape that is long in the first direction.

[0140] Fig.16 FIG. 1 shows an example of a light spot of green light formed on the first pixel 111 by the nanophotonic lens array 140 according to an embodiment. Fig.16 , when the nanophotonic lens array according to the embodiment is used, the spot of green light formed on the first pixel 111 can be further expanded in the first direction compared with the related examples. Thus, the spot of green light can be closer to 4-fold symmetry compared with the related examples. Therefore, the difference between the signals output from the first pixel 111 and the fourth pixel 114 in one unit pixel pattern can be smaller than that of the related examples.

[0141] Fig.17 1 is a plan view showing another example of the first element region 141 in the nanophotonic lens array 140. Figure 6 In the first element region 141, a pair of symmetrical nanostructures are arranged at the same distance from the horizontal center line Lx in the second direction. However, the embodiment is not limited thereto, and as Fig.17 As shown, multiple pairs of symmetrical nanostructures can be arranged at the same distance from the horizontal center line Lx in the second direction. For example, the first element region 141 may include a first pair of the second nanostructure NP2a and the third nanostructure NP2b, and a second pair of the sixth nanostructure NP2c and the seventh nanostructure NP2d. The second nanostructure NP2a and the third nanostructure NP2b, and the sixth nanostructure NP2c and the seventh nanostructure NP2d are symmetrically arranged in the first direction relative to the vertical center line Ly at a first distance from the horizontal center line Lx in the second direction. In addition, the first element region 141 may also include a third pair of the fourth nanostructure NP3a and the fifth nanostructure NP3b, and a fourth pair of the eighth nanostructure NP3c and the ninth nanostructure NP3d, wherein the fourth nanostructure NP3a and the fifth nanostructure NP3b, and the eighth nanostructure NP3c and the ninth nanostructure NP3d are symmetrically arranged in the first direction relative to the vertical center line Ly at a second distance less than the first distance from the horizontal center line Lx in the second direction.

[0142] In this case, the above-mentioned conditions for reducing the difference between the signals output from the first pixel 111 and the fourth pixel 114 may only apply to the nanostructures arranged at the outermost sides in the first direction, the nanostructures closest to both sides of the first meta region 141 in the first direction, or the nanostructures arranged at the largest intervals in the first direction. Fig.17 In the example shown, among the plurality of nanostructures arranged at a first distance from the horizontal center line Lx in the second direction, the interval between the first pair of nanostructures NP2a and NP2b in the first direction is large, and the interval between the second pair of nanostructures NP2c and NP2d in the first direction is small. Among the plurality of nanostructures arranged at a second distance from the horizontal center line Lx in the second direction, the interval between the third pair of nanostructures NP3a and NP3b in the first direction is large, and the interval between the fourth pair of nanostructures NP3c and NP3d in the first direction is small. Therefore, the above-mentioned condition for reducing the difference between the signals output from the first pixel 111 and the fourth pixel 114 may only apply to the first pair of nanostructures NP2a and NP2b and the third pair of nanostructures NP3a and NP3b, and may not apply to the second pair of nanostructures NP2c and NP2d and the fourth pair of nanostructures NP3c and NP3d.

[0143] For example, the ratio of the average cross-sectional dimensions of the first nanostructure NP1 to the average cross-sectional dimensions of the first pair of nanostructures NP2a and NP2b and the third pair of nanostructures NP3a and NP3b may be about 0.85 or less, about 0.7 to about 0.85, about 0.74 to about 0.85, or about 0.74 to about 0.8. In addition, the spacing between the third pair of nanostructures NP3a and NP3b in the first direction may be greater than the spacing between the first pair of nanostructures NP2a and NP2b in the first direction. For example, the spacing between the first pair of nanostructures NP2a and NP2b in the first direction, and the spacing between the third pair of nanostructures NP3a and NP3b in the first direction may satisfy the condition defined by Formula 3 above.

[0144] Fig.18 1 is a plan view showing another example of the first element region 141 in the nanophotonic lens array 140. In the nanophotonic lens array 140, nanostructures having a cross-sectional size greater than 80 nm are mainly arranged, but in order to finely adjust the transmitted light, nanostructures having a cross-sectional size of 80 nm or less may also be arranged. Fig.18, the first meta region 141 may include a first pair of the second nanostructure NP2a and the third nanostructure NP2b symmetrically arranged in the first direction with respect to the vertical center line Ly at a first distance from the horizontal center line Lx in the second direction, and a fifth pair of the tenth nanostructure NP2e and the eleventh nanostructure NP2f. In addition, the first meta region 141 may also include a third pair of the fourth nanostructure NP3a and the fifth nanostructure NP3b symmetrically arranged in the first direction with respect to the vertical center line Ly at a second distance less than the first distance from the horizontal center line Lx in the second direction, and a sixth pair of the twelfth nanostructure NP3e and the thirteenth nanostructure NP3f. According to example embodiments, the second nanostructure NP2a, the third nanostructure NP2b, the fourth nanostructure NP3a, and the fifth nanostructure NP3b may have a cross-sectional size greater than 80nm, and the tenth nanostructure NP2e, the eleventh nanostructure NP2f, the twelfth nanostructure NP3e, and the thirteenth nanostructure NP3f may have a cross-sectional size less than or equal to 80nm.

[0145] In this case, the above-mentioned condition for reducing the difference between the signals output from the first pixel 111 and the fourth pixel 114 may not be applicable to a nanostructure having a cross-sectional size of 80 nm or less, and may only be applicable to a nanostructure having a cross-sectional size greater than 80 nm. Fig.18 In the example shown, the above conditions do not apply to the tenth nanostructure NP2e, the eleventh nanostructure NP2f, the twelfth nanostructure NP3e, and the thirteenth nanostructure NP3f having a cross-sectional size less than or equal to 80nm. Therefore, the ratio of the average cross-sectional size of the first nanostructure NP1 to the average cross-sectional size of the first pair of nanostructures NP2a and NP2b and the third pair of nanostructures NP3a and NP3b may be about 0.85 or less, about 0.7 to about 0.85, about 0.74 to about 0.85, or about 0.74 to about 0.8. In addition, the spacing between the third pair of nanostructures NP3a and NP3b in the first direction may be greater than the spacing between the first pair of nanostructures NP2a and NP2b in the first direction. For example, the spacing between the first pair of nanostructures NP2a and NP2b in the first direction, and the spacing between the third pair of nanostructures NP3a and NP3b in the first direction may satisfy the condition defined by Formula 3 above.

[0146] Fig.19 1 is a plan view showing another example of the first element region 141 in the nanophotonic lens array 140. Fig.19 , the nanostructures may not be arranged on the vertical center line Ly. In this case, the nanostructures arranged closest to the vertical center line Ly in the first direction may be used as Figure 6The first nanostructure NP1 is shown arranged on the vertical center line Ly. For example, the first meta region 141 may include a first-1 nanostructure NP1a and a first-2 nanostructure NP1b arranged symmetrically in the first direction relative to the vertical center line Ly. The interval between the first-1 nanostructure NP1a and the first-2 nanostructure NP1b in the first direction may be smaller than the interval between the second nanostructure NP2a and the third nanostructure NP2b in the first direction, and may be smaller than the interval between the fourth nanostructure NP3a and the fifth nanostructure NP3b in the first direction. In this case, the average cross-sectional size of the first-1 nanostructure NP1a and the first-2 nanostructure NP1b may be smaller than the average cross-sectional size of the second to fifth nanostructures NP2a, NP2b, NP3a, and NP3b. For example, the ratio of the average cross-sectional size of the first-1 nanostructure NP1a and the first-2 nanostructure NP1b to the average cross-sectional size of the second to fifth nanostructures NP2a, NP2b, NP3a and NP3b may be about 0.85 or less, about 0.7 to about 0.85, about 0.74 to about 0.85, or about 0.75 to about 0.8.

[0147] Fig.19 It is shown that the first-1 nanostructure NP1a and the first-2 nanostructure NP1b are arranged between the second nanostructure NP2a and the third nanostructure NP2b and the fourth nanostructure NP3a and the fifth nanostructure NP3b in the second direction relative to the horizontal center line Lx, but the embodiment is not limited thereto. The first-1 nanostructure NP1a and the first-2 nanostructure NP1b may be located closer to the horizontal center line Lx than the fourth nanostructure NP3a and the fifth nanostructure NP3b in the second direction, or may be closer to the edge of the first meta region 141 in the second direction than the second nanostructure NP2a and the third nanostructure NP2b.

[0148] Fig. 20 1 is a plan view showing another example of a unit cell pattern in the nanophotonic lens array 140a. Fig. 20In the first element region 141 and the second element region 144 of the nanophotonic lens array 140a, the nanostructures may be arranged to have a 4-fold symmetric structure, or a structure approximating to a 4-fold symmetric structure. For example, the first element region 141 may include a first-1 nanostructure NP1a, a first-2 nanostructure NP1b, a second nanostructure NP2a, a third nanostructure NP2b, a fourth nanostructure NP3a, and a fifth nanostructure NP3b arranged to satisfy the above-mentioned condition for reducing the difference between the signals output from the first pixel 111 and the fourth pixel 114. In order to make the first element region 141 have a 4-fold symmetric structure, or a structure approximating to a 4-fold symmetric structure, the fourth nanostructure NP3a may be arranged on a first diagonal line passing through the center of the first element region 141, and the fifth nanostructure NP3b may be arranged on a second diagonal line passing through the center of the first element region 141 and intersecting the first diagonal line.

[0149] In addition, the first meta-region 141 may further include additional nanostructures arranged to be symmetrical with the first-1 nanostructure NP1a, the first-2 nanostructure NP1b, the second nanostructure NP2a, and the third nanostructure NP2b, respectively, relative to the first diagonal line and the second diagonal line. For example, the first meta-region 141 includes the first additional nanostructure NP1a', the second additional nanostructure NP1b', the third additional nanostructure NP2a', and the fourth additional nanostructure NP2b', which are arranged to be symmetrical with the first-1 nanostructure NP1a, the first-2 nanostructure NP1b, the second nanostructure NP2a, and the third nanostructure NP2b, respectively, relative to the first diagonal line, and the fifth additional nanostructure NP1a", the sixth additional nanostructure NP1b", the seventh additional nanostructure NP2a", and the eighth additional nanostructure NP2b", which are arranged to be symmetrical with the first-1 nanostructure NP1a, the first-2 nanostructure NP1b, the second nanostructure NP2a, and the third nanostructure NP2b, respectively, relative to the second diagonal line.

[0150] Fig.21 1 is a plan view showing another example of a unit cell pattern in the nanophotonic lens array 140b. Fig. 20 In the example shown, when the additional nanostructure added to the 4-fold symmetric structure or the approximately 4-fold symmetric structure has a cross-sectional size greater than 80 nm, the color separation performance of the nanophotonic lens array 140a may be reduced, and the optical efficiency may be reduced. Fig.21, the first element region 141 and the fourth element region 144 of the nanophotonic lens array 140b may include additional nanostructures having a cross-sectional size less than or equal to 80nm for a 4-fold symmetric or approximately 4-fold symmetric structure. For example, the first additional nanostructure NP1a', the second additional nanostructure NP1b', the third additional nanostructure NP2a', the fourth additional nanostructure NP2b', the fifth additional nanostructure NP1a", the sixth additional nanostructure NP1b", the seventh additional nanostructure NP2a", and the eighth additional nanostructure NP2b" may each have a cross-sectional size of 80nm or less. In addition, the first element region 141 may also include a ninth additional nanostructure NP4a' arranged on the first diagonal line and a tenth additional nanostructure NP4a' arranged on the second diagonal line. The ninth additional nanostructure NP4a' and the tenth additional nanostructure NP4a" may have a cross-sectional size of 80nm or less.

[0151] In the image sensor 1000 according to the example embodiment, the nanophotonic lens array 140 can color-separate the incident light without absorbing or reflecting the incident light, and then converge the color-separated light onto each pixel, and thus, the light utilization efficiency can be improved, and the reduction in resolution can be reduced. Therefore, the size of a single pixel of the image sensor 1000, or the size of an independent photosensitive unit in a pixel, can be reduced, and thus, an image sensor 1000 with a higher resolution can be provided. In addition, according to the example embodiment, while using the nanophotonic lens array 140, an image processing algorithm in an image sensor according to the related art can be used. The image sensor 1000 according to the example embodiment can form a camera module together with module lenses of various functions, and can be used in various electronic devices.

[0152] Fig. 22 is a block diagram showing an example of an electronic device ED01 including an image sensor 1000. Fig. 22In the network environment ED00, the electronic device ED01 can communicate with another electronic device ED02 via a first network ED98 (short-range wireless communication network, etc.), or can communicate with another electronic device ED04 and / or a server ED08 via a second network ED99 (long-range wireless communication network, etc.). The electronic device ED01 can communicate with the electronic device ED04 via the server ED08. The electronic device ED01 may include a processor ED20, a memory ED30, an input device ED50, a sound output device ED55, a display device ED60, an audio module ED70, a sensor module ED76, an interface ED77, a tactile module ED79, a camera module ED80, a power management module ED88, a battery ED89, a communication module ED90, a subscriber identification module ED96 and / or an antenna module ED97. In the electronic device ED01, some elements (display device ED60, etc.) may be omitted, or another element may be added. Some elements may be configured as an integrated circuit. For example, the sensor module ED76 (fingerprint sensor, iris sensor, illumination sensor, etc.) can be embedded and implemented in the display device ED60 (display, etc.).

[0153] The processor ED20 can control one or more elements (hardware, software elements, etc.) of the electronic device ED01 connected to the processor ED20 by executing software (program ED40, etc.), and can perform various data processing or operations. As part of the data processing or operation, the processor ED20 can load commands and / or data received from another element (sensor module ED76, communication module ED90, etc.) into the volatile memory ED32, can process the commands and / or data stored in the volatile memory ED32, and can store the result data in the non-volatile memory ED34. The non-volatile memory ED34 may include an internal memory ED36 and an external memory ED38. The processor ED20 may include a main processor ED21 (central processing unit, application processor, etc.), and an auxiliary processor ED23 (graphics processing unit, image signal processor, sensor hub processor, communication processor, etc.) that can operate independently of the main processor ED21 or operate together with the main processor ED21. The auxiliary processor ED23 can use less power than the main processor ED21 and can perform specific functions.

[0154] The auxiliary processor ED23 can control functions and / or states related to some elements (display device ED60, sensor module ED76, communication module ED90, etc.) in the electronic device ED01 on behalf of the main processor ED21 when the main processor ED21 is in an inactive state (sleep state), or together with the main processor ED21 when the main processor ED21 is in an active state (application execution state). The auxiliary processor ED23 (image signal processor, communication processor, etc.) can be implemented as a part of another element (camera module ED80, communication module ED90, etc.) that is functionally related to it.

[0155] The memory ED30 can store various data required by the components of the electronic device ED01 (processor ED20, sensor module ED76, etc.). For example, the data may include input data and / or output data related to software (program ED40, etc.), and commands related thereto. The memory ED30 may include a volatile memory ED32 and / or a non-volatile memory ED34.

[0156] The program ED40 may be stored as software in the memory ED30 , and may include an operating system ED42 , middleware ED44 , and / or applications ED46 .

[0157] The input device ED50 may receive commands and / or data to be used in elements (processor ED20, etc.) of the electronic device ED01 from outside (user, etc.) of the electronic device ED01. The input device ED50 may include a microphone, a mouse, a keyboard, and / or a digital pen (stylus).

[0158] The sound output device ED55 can output sound signals to the outside of the electronic device ED01. The sound output device ED55 may include a speaker and / or an earpiece. The speaker may be used for general purposes such as multimedia reproduction or recording playback, and the earpiece may be used to receive calls. The earpiece may be coupled as part of the speaker, or may be implemented as an independent device.

[0159] The display device ED60 can provide visual information to the outside of the electronic device ED01. The display device ED60 may include a display, a holographic device or a projector, and a control circuit for controlling the corresponding device. The display device ED60 may include a touch circuit configured to sense a touch and / or a sensor circuit (pressure sensor, etc.) configured to measure the strength of the force generated by the touch.

[0160] The audio module ED70 can convert sound into an electrical signal and vice versa. The audio module ED70 can obtain sound through the input device ED50, or can output sound via the sound output device ED55 and / or a speaker and / or earphone of another electronic device (electronic device ED02, etc.) directly or wirelessly connected to the electronic device ED01.

[0161] The sensor module ED76 can sense the operating state (power, temperature, etc.) or the external environment state (user state, etc.) of the electronic device ED01, and can generate an electrical signal and / or data value corresponding to the sensed state. The sensor module ED76 can include a gesture sensor, a gyroscope sensor, a pressure sensor, a magnetic sensor, an acceleration sensor, a grip sensor, a proximity sensor, a color sensor, an infrared (IR) sensor, an in-vivo sensor, a temperature sensor, a humidity sensor, and / or an illumination sensor.

[0162] Interface ED77 may support one or more specified protocols that may be used to connect electronic device ED01 directly or wirelessly to another electronic device (electronic device ED02, etc.) Interface ED77 may include a high-definition multimedia interface (HDMI), a universal serial bus (USB) interface, an SD card interface, and / or an audio interface.

[0163] The connection terminal ED78 may include a connector through which the electronic device ED01 may be physically connected to another electronic device (electronic device ED02, etc.) The connection terminal ED78 may include an HDMI connector, a USB connector, an SD card connector, and / or an audio connector (headphone connector, etc.).

[0164] The haptic module ED79 may convert the electrical signal into mechanical stimulation (vibration, motion, etc.) or electrical stimulation that the user may sense through tactile or kinesthetic sense. The haptic module ED79 may include a motor, a piezoelectric device, and / or an electrical stimulation device.

[0165] The camera module ED80 can capture still images and videos. The camera module ED80 may include a lens assembly having one or more lenses, Figure 1 The image sensor 1000, the image signal processor and / or the flash lamp of the camera module ED80 may be included in the camera module ED80. The lens assembly included in the camera module ED80 may collect light emitted from a subject (a subject to be captured).

[0166] The power management module ED88 may manage power supplied to the electronic device ED01. The power management module ED88 may be implemented as a part of a power management integrated circuit (PMIC).

[0167] The battery ED89 can supply power to the components of the electronic device ED01. The battery ED89 may include a non-rechargeable primary battery, a rechargeable secondary battery, and / or a fuel cell.

[0168] The communication module ED90 can support the establishment of a direct (wired) communication channel and / or a wireless communication channel between the electronic device ED01 and another electronic device (electronic device ED02, electronic device ED04, server ED08, etc.), and perform communication through the established communication channel. The communication module ED90 can operate independently of the processor ED20 (application processor, etc.), and can include one or more communication processors that support direct communication and / or wireless communication. The communication module ED90 can include a wireless communication module ED92 (cellular communication module, short-range wireless communication module, global navigation satellite system (GNSS) communication module) and / or a wired communication module ED94 (local area network (LAN) communication module, power line communication module, etc.). Among the communication modules, the corresponding communication module can communicate with another electronic device via a first network ED98 (short-range communication network such as Bluetooth, WiFi Direct or Infrared Data Association (IrDA)) or a second network ED99 (long-range communication network such as a cellular network, the Internet or a computer network (LAN, WAN, etc.)). These various types of communication modules described above may be integrated into one component (single chip, etc.) or may be implemented as multiple components (multiple chips) separated from each other. The wireless communication module ED92 may identify and authenticate the electronic device ED01 in a communication network (e.g., first network ED98 and / or second network ED99) by using subscriber information (International Mobile Subscriber Identifier (IMSI) etc.) stored in the subscriber identification module ED96.

[0169] The antenna module ED97 can send signals and / or power to the outside (another electronic device, etc.) or receive signals and / or power from the outside (another electronic device, etc.). The antenna may include a radiator formed as a conductive pattern formed on a substrate (PCB, etc.). The antenna module ED97 may include one or more antennas. When the antenna module ED97 includes multiple antennas, among the multiple antennas, an antenna suitable for the communication type used in the communication network (for example, the first network ED98 and / or the second network ED99) can be selected by the communication module ED90. Signals and / or power can be sent between the communication module ED90 and another electronic device via the selected antenna. Another component (RFIC, etc.) other than the antenna may be included as part of the antenna module ED97.

[0170] Some elements may be connected to each other via a communication method between peripheral devices (bus, general purpose input and output (GPIO), serial peripheral interface (SPI), mobile industry processor interface (MIPI), etc.) and may exchange signals (commands, data, etc.).

[0171] Commands or data can be sent or received between the electronic device ED01 and the external electronic device ED04 via the server ED08 connected to the second network ED99. The other electronic devices ED02 and ED04 can be devices of the same or different types as the electronic device ED01. All or some of the operations performed in the electronic device ED01 can be performed in one or more devices among the other electronic devices ED02, ED04 and ED08. For example, when the electronic device ED01 must perform a certain function or service, the electronic device ED01 can request one or more other electronic devices to perform part or all of the function or service instead of performing the function or service by itself. The one or more electronic devices that receive the request perform additional functions or services related to the request, and can transmit the results of the execution to the electronic device ED01. To this end, for example, cloud computing, distributed computing or client-server computing technology can be used.

[0172] Fig.23 It shows Fig. 22 1 is a block diagram of an example of a camera module ED80 included in an electronic device ED01. Fig.23 , the camera module ED80 may include a lens assembly 1110, a flash 1120, an image sensor 1000, an image stabilizer 1140, a memory 1150 (buffer memory, etc.) and / or an image signal processor 1160. The lens assembly 1110 may collect light emitted from an object to be captured. The camera module ED80 may include a plurality of lens assemblies 1110, and in this case, the camera module ED80 may include a dual camera module, a 360-degree camera, or a spherical camera. Some of the plurality of lens assemblies 1110 may have the same lens characteristics (viewing angle, focal length, autofocus, F number, optical zoom, etc.) or different lens characteristics. The lens assembly 1110 may include a wide-angle lens or a telephoto lens.

[0173] The flash 1120 may emit light for enhancing light emitted or reflected from an object. The flash 1120 may emit visible light or infrared light. The flash 1120 may include one or more light emitting diodes (red-green-blue (RGB) LEDs, white light LEDs, infrared LEDs, ultraviolet LEDs, etc.) and / or xenon lamps. The image sensor 1000 may be the above-referenced Figure 1 The described image sensor converts light emitted or reflected from an object and transmitted through the lens assembly 1110 into an electric signal to obtain an image corresponding to the object.

[0174] In response to the movement of the camera module ED80 or the electronic device ED01 including the camera module ED80, the image stabilizer 1140 moves one or more lenses included in the lens assembly 1110 or the image sensor 1000 in a certain direction, or controls the operating characteristics of the image sensor 1000 (adjustment of readout timing, etc.) to compensate for the negative effects of the movement. The image stabilizer 1140 can sense the movement of the camera module ED80 or the electronic device ED01 by using a gyro sensor (not shown) or an acceleration sensor (not shown) provided inside or outside the camera module ED80. The image stabilizer 1140 can be implemented as an optical type.

[0175] The memory 1150 may store part or all of the data of the image obtained by the image sensor 1000 for the next image processing operation. For example, when a plurality of images are obtained at a high speed, the obtained raw data (Bayer pattern data, high-resolution data, etc.) is stored in the memory 1150, and only the low-resolution image is displayed. Then, the raw data of the selected image (user selection, etc.) may be transmitted to the image signal processor 1160. The memory 1150 may be integrated with the memory ED30 of the electronic device ED01, or may include an additional memory that operates independently.

[0176] The image signal processor 1160 may perform image processing on an image obtained by the image sensor 1000 or image data stored in the memory 1150. Image processing may include depth map generation, three-dimensional modeling, panorama generation, feature extraction, image combination and / or image compensation (noise reduction, resolution adjustment, brightness adjustment, blur, sharpening, softening, etc.). The image signal processor 1160 may perform control (exposure time control, readout timing control, etc.) of the elements (image sensor 1000, etc.) included in the camera module ED80. In addition, the image signal processor 1160 may generate a full-color image by executing a demosaicing algorithm. For example, when a demosaicing algorithm is executed to generate a full-color image, the image signal processor 1160 may reconstruct most of the spatial resolution information by using an image signal of a green channel or a yellow channel having a high spatial sampling rate.

[0177] The image processed by the image signal processor 1160 may be stored again in the memory 1150 for additional processing, or may be provided to an external element of the camera module ED80 (e.g., the memory ED30, the display device ED60, the electronic device ED02, the electronic device ED04, the server ED08, etc.). The image signal processor 1160 may be integrated with the processor ED20, or may be configured as an additional processor that operates independently from the processor ED20. When the image signal processor 1160 is configured as an additional processor separate from the processor ED20, the image processed by the image signal processor 1160 undergoes additional image processing by the processor ED20, and may then be displayed on the display device ED60.

[0178] In addition, the image signal processor 1160 can independently receive two output signals from adjacent photosensitive units in each pixel or sub-pixel of the image sensor 1000, and can generate an autofocus signal according to the difference between the two output signals. The image signal processor 1160 can control the lens assembly 1110 based on the autofocus signal so that the focus of the lens assembly 1110 can be accurately formed on the surface of the image sensor 1000.

[0179] The electronic device ED01 may also include one or more camera modules with different characteristics or functions. The camera module may include Fig.23 The elements of the camera module ED80 are similar to the elements of the camera module ED80, and the image sensor included in the camera module may be implemented as a CCD sensor and / or a CMOS sensor, and may include one or more sensors selected from image sensors with different characteristics (e.g., an RGB sensor, a black and white (BW) sensor, an IR sensor, or a UV sensor). In this case, one of the multiple camera modules ED80 may include a wide-angle camera, and another camera module ED80 may include a telephoto camera. Similarly, one of the multiple camera modules ED80 may include a front camera, and another camera module ED80 may include a rear camera.

[0180] Fig.24 is a block diagram of an electronic device 1200 including a multi-camera module, and Fig.25 yes Fig.24 Detailed block diagram of a camera module in an electronic device shown.

[0181] refer to Fig.24 , the electronic device 1200 may include a camera module group 1300 , an application processor 1400 , a power management integrated circuit (PMIC) 1500 , an external memory 1600 , and an image generator 1700 .

[0182] The camera module group 1300 may include a plurality of camera modules 1300a, 1300b, and 1300c. Although the drawings show an example in which three camera modules 1300a, 1300b, and 1300c are arranged, one or more embodiments are not limited thereto. In some embodiments, the camera module group 1300 may be modified to include only two camera modules. In addition, in some embodiments, the camera module group 1300 may be modified to include n (n is a natural number of 4 or greater) camera modules.

[0183] In the following, reference is made to Fig.25 A detailed configuration of one camera module 1300 b is described as an example, but the description provided below may also be applied to other camera modules 1300 a and 1300 c according to example embodiments.

[0184] refer to Fig.25 , the camera module 1300 b may include a prism 1305 , an optical path folding element (OPFE) 1310 , an actuator 1330 , an image sensing device 1340 , and a storage unit 1350 .

[0185] The prism 1305 may include a reflective surface 1307 having a light reflective material, and may deform a path of light L incident from the outside.

[0186] In some example embodiments, the prism 1305 may change the path of the light L incident in the first direction (X direction) to a second direction (Y direction) perpendicular to the first direction (X direction). In addition, the prism 1305 may rotate the reflective surface 1307 having the light reflective material around the central axis 1306 in the direction A or around the central axis 1306 in the direction B, so that the path of the light L incident in the first direction (X direction) may be changed to a second direction (Y direction) perpendicular to the first direction (X direction). Here, the OPFE 1310 may also move in a third direction (Z direction) perpendicular to the first direction (X direction) and the second direction (Y direction).

[0187] In some example embodiments, as shown in the drawings, the maximum rotation angle of the prism 1305 in direction A is 15° or less in the positive A direction and greater than 15° in the negative A direction, but the embodiment is not limited thereto.

[0188] In some example embodiments, the prism 1305 may be moved by about 20°, or by an angle between 10° and 20°, or between 15° and 20°, in the positive B direction or the negative B direction. Here, the moving angle is the same in the positive B direction or the negative B direction, or may be similar within a range of about 1°.

[0189] In some example embodiments, the prism 1305 may move the reflective surface 1307 of the light reflective material in a third direction (eg, Z direction) parallel to the direction in which the central axis 1306 extends.

[0190] For example, the OPFE 1310 may include optical lenses formed in m groups (here, m is a natural number). Here, the m lenses move in the second direction (Y direction), and the optical zoom ratio of the camera module 1300b may be changed. For example, when the basic optical zoom ratio of the camera module 1300b is Z and the m optical lenses included in the OPFE 1310 move, the optical zoom ratio of the camera module 1300b may be changed to 3Z, 5Z, 10Z, or more.

[0191] The actuator 1330 may move the OPFE 1310 (hereinafter, referred to as an optical lens) to a certain position. For example, the actuator 1330 may adjust the position of the optical lens so that the image sensor 1342 may be located at the focal length of the optical lens for accurate sensing operation.

[0192] The image sensing device 1340 may include an image sensor 1342, a control logic 1344, and a memory 1346. The image sensor 1342 may sense an image of a sensing target by using light L provided through an optical lens. The control logic 1344 may control the overall operation of the camera module 1300b. For example, the control logic 1344 may control the operation of the camera module 1300b according to a control signal provided through the control signal line CSLb.

[0193] For example, the image sensor 1342 may include the above-mentioned color separation lens array or nanophotonic lens array. The image sensor 1342 can receive more signals separated according to wavelength in each pixel by using a color separation lens array based on a nanostructure. Due to the above effect, the optical intensity required for generating high-resolution high-quality images under low illumination can be ensured.

[0194] The memory 1346 may store information necessary for the operation of the camera module 1300b (e.g., calibration data 1347). The calibration data 1347 may include information necessary for generating image data by using the light L provided from the outside through the camera module 1300b. For example, the calibration data 1347 may include the above-mentioned information related to the degree of rotation, information related to the focal length, information related to the optical axis, etc. When the camera module 1300b is implemented in the form of a multi-state camera in which the focal length varies according to the position of the optical lens, the calibration data 1347 may include information related to the focal length value and autofocus of the optical lens according to each position (or state).

[0195] The storage unit 1350 may store image data sensed by the image sensor 1342. The storage unit 1350 may be provided outside the image sensing device 1340, and may be stacked with a sensor chip included in the image sensing device 1340. In some example embodiments, the storage unit 1350 may be implemented as an electrically erasable programmable read-only memory (EEPROM), but one or more embodiments are not limited thereto.

[0196] refer to Fig.24 and Fig.25 In some example embodiments, each of the plurality of camera modules 1300a, 1300b, and 1300c may include an actuator 1330. Therefore, each of the plurality of camera modules 1300a, 1300b, and 1300c may include calibration data 1347 that is the same as or different from each other according to the operation of the actuator 1330 included therein.

[0197] In some example embodiments, one of the plurality of camera modules 1300a, 1300b, and 1300c (e.g., 1300b) may be a folded lens type camera module including the above-described prism 1305 and OPFE 1310, and the other camera modules (e.g., 1300a and 1300c) may be vertical type camera modules not including the prism 1305 and OPFE 1310. However, the present disclosure is not limited thereto.

[0198] In some example embodiments, one of the plurality of camera modules 1300a, 1300b, and 1300c (eg, 1300c) may be a vertical type depth camera that extracts depth information by using infrared rays (IR).

[0199] In some example embodiments, at least two camera modules (e.g., 1300a and 1300b) among the plurality of camera modules 1300a, 1300b, and 1300c may have different fields of view. In this case, for example, optical lenses of at least two camera modules (e.g., 1300a and 1300b) among the plurality of camera modules 1300a, 1300b, and 1300c may be different from each other, but one or more embodiments are not limited thereto.

[0200] Furthermore, in some example embodiments, the plurality of camera modules 1300a, 1300b, and 1300c may have different fields of view from each other. In this case, the optical lenses respectively included in the plurality of camera modules 1300a, 1300b, and 1300c may be different from each other, but the inventive concept is not limited thereto.

[0201] In some example embodiments, the plurality of camera modules 1300a, 1300b, and 1300c may be physically isolated from each other. That is, the sensing area of ​​one image sensor 1342 may not be divided and used by the plurality of camera modules 1300a, 1300b, and 1300c, but the plurality of camera modules 1300a, 1300b, and 1300c may each have an independent image sensor 1342 disposed therein.

[0202] Return to reference Fig.24 , the application processor 1400 may include an image processing device 1410, a storage controller 1420, and an internal memory 1430. The application processor 1400 may be implemented separately from the plurality of camera modules 1300a, 1300b, and 1300c. For example, the application processor 1400 and the plurality of camera modules 1300a, 1300b, and 1300c may be implemented separately as separate semiconductor chips.

[0203] The image processing device 1410 may include a plurality of image processors 1411 , 1412 , and 1413 and a camera module controller 1414 .

[0204] The image data generated by each of the camera modules 1300a, 1300b, and 1300c may be provided to the image processing device 1410 via separate image signal lines ISLa, ISLb, and ISLc, respectively. For example, the image data transmission may be performed by using a camera serial interface (CSI) based on a mobile industry processor interface (MIPI), but is not limited thereto.

[0205] The image data transmitted to the image processing device 1410 may be stored in the external memory 1600 before being transmitted to the image processors 1411 and 1412. The image data stored in the external memory 1600 may be provided to the image processor 1411 and / or the image processor 1412. The image processor 1411 may correct the image data so as to generate a video. The image processor 1412 may correct the image data so as to generate a still image. For example, the image processors 1411 and 1412 may perform pre-processing operations (e.g., color calibration, gamma calibration) on the image data.

[0206] The image processor 1411 may include sub-processors. When the number of sub-processors is equal to the number of camera modules 1300a, 1300b, and 1300c, each sub-processor may process image data provided from one camera module. When the number of sub-processors is less than the number of camera modules 1300a, 1300b, and 1300c, at least one sub-processor may process image data provided from a plurality of camera modules by using timing-sharing processing. Image data processed by the image processor 1411 and / or the image processor 1412 may be stored in the external memory 1600 before being transmitted to the image processor 1413. The image data stored in the external memory 1600 may be transmitted to the image processor 1413. The image processor 1413 may perform post-processing operations (e.g., noise calibration, sharpening calibration, etc.) on the image data.

[0207] The image data processed in the image processor 1413 may be provided to the image generator 1700. The image generator 1700 may generate a final image by using the image data provided from the image processor 1413 according to the image generation information or the mode signal.

[0208] For example, the image generator 1700 may generate an output image by merging at least a portion of the image data generated by the camera modules 1300a, 1300b, and 1300c having different fields of view according to the image generation information or the mode signal. In addition, the image generator 1700 may generate an output image by selecting one of the plurality of image data generated by the camera modules 1300a, 1300b, and 1300c having different fields of view according to the image generation information or the mode signal.

[0209] In some example embodiments, the image generation information may include a zoom signal or a zoom factor. Furthermore, in some example embodiments, for example, the mode signal may be a signal based on a mode selected by a user.

[0210] When the image generation information is a zoom signal (zoom factor) and the camera modules 1300a, 1300b, and 1300c have different fields of view (angles of view) from each other, the image generator 1700 may perform different operations according to the type of the zoom signal. For example, when the zoom signal is a first signal, the image data output from the camera module 1300a is merged with the image data output from the camera module 1300c, and then, an output image may be generated by using the merged image signal and the image data output from the camera module 1300b and not used for merging. When the zoom signal is a second signal different from the first signal, the image generator 1700 may not perform image data merging, and then, an output image may be generated by selecting a piece of image data output from the camera modules 1300a, 1300b, and 1300c, respectively. However, one or more embodiments are not limited thereto, and the method for processing image data may be modified as needed.

[0211] The camera module controller 1414 may provide a control signal to each of the camera modules 1300a, 1300b, and 1300c. The control signal generated by the camera module controller 1414 may be provided to the corresponding camera modules 1300a, 1300b, and 1300c via control signal lines CSLa, CSLb, and CSLc separated from each other.

[0212] In some example embodiments, the control signal provided from the camera module controller 1414 to the plurality of camera modules 1300a, 1300b and 1300c may include mode information according to the mode signal. The plurality of camera modules 1300a, 1300b and 1300c may operate in the first operation mode and the second operation mode related to the sensing speed based on the mode information.

[0213] In the first operation mode, the plurality of camera modules 1300a, 1300b, and 1300c may generate image signals at a first speed (e.g., generate image signals of a first frame rate), encode the image signals at a second speed faster than the first speed (e.g., encode image signals of a second frame rate greater than the first frame rate), and transmit the encoded image signals to the application processor 1400. Here, the second speed may be 30 times or less than the first speed.

[0214] The application processor 1400 may store the received image signal (i.e., the encoded image signal) in the memory 1430 provided therein or in the external memory 1600 outside the application processor 1400, and thereafter, read and decode the encoded signal from the memory 1430 or the external memory 1600, and may display image data generated based on the decoded image signal. For example, the image processors 1411 and 1412 in the image processing device 1410 may perform decoding, and may perform image processing on the decoded image signal.

[0215] In the second operation mode, the plurality of camera modules 1300a, 1300b, and 1300c generate image signals at a third speed slower than the first speed (e.g., generate image signals at a third frame rate lower than the first frame rate), and may transmit the image signals to the application processor 1400. The image signals provided to the application processor 1400 may be uncoded signals. The application processor 1400 may perform image processing on the received image signals, or store the image signals in the memory 1430 or the external memory 1600.

[0216] The PMIC 1500 may supply power (e.g., power supply voltage) to each of the plurality of camera modules 1300a, 1300b, and 1300c. For example, the PMIC 1500 may supply a first power to the camera module 1300a via a power signal line PSLa, supply a second power to the camera module 1300b via a power signal line PSLb, and supply a third power to the camera module 1300c via a power signal line PSLc, under the control of the application processor 1400.

[0217] The PMIC 1500 may generate power corresponding to each of the plurality of camera modules 1300a, 1300b, and 1300c in response to a power control signal PCON from the application processor 1400, and may adjust the power level. The power control signal PCON may include a power adjustment signal for each operating mode of the plurality of camera modules 1300a, 1300b, and 1300c. For example, the operating mode may include a low power mode, and the power control signal PCON may include information related to the camera module operating in the low power mode, and the set power level. The power levels provided to the plurality of camera modules 1300a, 1300b, and 1300c may be equal to or different from each other. In addition, the power level may change dynamically.

[0218] It should be understood that the example embodiments described herein should be considered to be descriptive only and not for limiting purposes. The description of features or aspects in each example embodiment should typically be considered to be applicable to other similar features or aspects in other embodiments. Although example embodiments have been described with reference to the accompanying drawings, it will be understood by those of ordinary skill in the art that various changes in form and details may be made without departing from the spirit and scope defined by the appended claims and their equivalents.

Claims

1. An image sensor, comprising: a sensor substrate including a first pixel, a second pixel, a third pixel, and a fourth pixel, wherein the first pixel, the second pixel, the third pixel, and the fourth pixel are configured to sense light; as well as A nanophotonic lens array comprises a first element region, a second element region, a third element region and a fourth element region, wherein the first element region corresponds to the first pixel, the second element region corresponds to the second pixel, the third element region corresponds to the third pixel, and the fourth element region corresponds to the fourth pixel, Each of the first meta region, the second meta region, the third meta region, and the fourth meta region includes a plurality of nanostructures, and the plurality of nanostructures are configured to perform color separation on incident light incident on the nanophotonic lens array, and to converge light of a first wavelength band onto the first pixel and the fourth pixel, converge light of a second wavelength band onto the second pixel, and converge light of a third wavelength band onto the third pixel, wherein the first meta-region includes a plurality of pairs at different distances from a horizontal center line in a second direction perpendicular to the first direction, each pair having two nanostructures symmetrical in the first direction, the horizontal center line passing through the center of the first meta-region along the first direction, and In which, in the direction toward the horizontal center line in the second direction, the spacing between the two symmetrical nanostructures of the corresponding pairs among the multiple pairs in the first direction increases, and in the direction away from the horizontal center line in the second direction, the spacing between the two symmetrical nanostructures of the corresponding pairs among the multiple pairs in the first direction decreases.

2. The image sensor according to claim 1, wherein: An interval in the first direction between two nanostructures symmetrical in the first direction of a pair of the plurality of pairs arranged on the horizontal center line is L / 8 to 3L / 8, where L is a side length of the first meta-region.

3. The image sensor according to claim 2, wherein: The spacing ΔS in the first direction between two symmetrical nanostructures arranged at a distance d from the horizontal center line in the second direction satisfies: <h2 style=";text-align:left;direction:ltr">2L(0.13-0.47y<h2 style=";text-align:left;direction:ltr"> 2 <h2 style=";text-align:left;direction:ltr"> <ΔS<2L(0.38-0.96y)<h2 style=";text-align:left;direction:ltr"> 2 <h2 style=";text-align:left;direction:ltr"> -0.89y<h2 style=";text-align:left;direction:ltr"> 4 <h2 style=";text-align:left;direction:ltr"> -1.63y<h2 style=";text-align:left;direction:ltr"> 6 <h2 style=";text-align:left;direction:ltr"> ), Here, y=d / L and 0<y<0.

5.

4. The image sensor according to claim 1, wherein: The first meta-area includes: a first nanostructure on a vertical centerline that passes through a center of the first meta-region in the second direction; a second nanostructure and a third nanostructure, symmetrical in the first direction at a first distance from the horizontal center line in the second direction; and The fourth nanostructure and the fifth nanostructure are symmetrical in the first direction at a second distance from the horizontal center line in the second direction, and the second distance is smaller than the first distance. Wherein, a distance between the fourth nanostructure and the fifth nanostructure in the first direction is greater than a distance between the second nanostructure and the third nanostructure in the first direction.

5. The image sensor according to claim 4, wherein: The second nanostructure and the third nanostructure are symmetrical to each other with respect to the vertical center line in the first direction, and the fourth nanostructure and the fifth nanostructure are symmetrical to each other with respect to the vertical center line in the first direction.

6. The image sensor according to claim 4, wherein: The interval between the fourth nanostructure and the fifth nanostructure in the first direction, or the interval between the second nanostructure and the third nanostructure in the first direction at a distance d from the horizontal center line in the second direction is ΔS, and ΔS satisfies: <h2 style=";text-align:left;direction:ltr">2L(0.13-0.47y<h2 style=";text-align:left;direction:ltr"> 2 <h2 style=";text-align:left;direction:ltr"> <ΔS<2L(0.38-0.96y)<h2 style=";text-align:left;direction:ltr"> 2 <h2 style=";text-align:left;direction:ltr"> -0.89y<h2 style=";text-align:left;direction:ltr"> 4 <h2 style=";text-align:left;direction:ltr"> -1.63y<h2 style=";text-align:left;direction:ltr"> 6 <h2 style=";text-align:left;direction:ltr"> ), Wherein, L represents the length of a side of the first element region, y=d / L and 0<y<0.

5.

7. The image sensor according to claim 4, wherein: The first nanostructure has a first cross-sectional size, the second nanostructure and the third nanostructure have a second cross-sectional size, and the fourth nanostructure and the fifth nanostructure have a third cross-sectional size, and Wherein, an average value of the second cross-sectional size and the third cross-sectional size is greater than the first cross-sectional size.

8. The image sensor according to claim 7, wherein: A ratio of the first cross-sectional dimension to the average of the second cross-sectional dimension and the third cross-sectional dimension is less than or equal to 0.

85.

9. The image sensor according to claim 7, wherein: A ratio of the first cross-sectional dimension to the average of the second cross-sectional dimension and the third cross-sectional dimension is 0.7 to 0.

8.

10. The image sensor according to claim 4, wherein: The first meta-area includes: The sixth nanostructure and the seventh nanostructure are symmetrical in the first direction at the first distance from the horizontal center line in the second direction; and The eighth nanostructure and the ninth nanostructure are symmetrical in the first direction at the second distance from the horizontal center line in the second direction, wherein the interval between the second nanostructure and the third nanostructure in the first direction is greater than the interval between the sixth nanostructure and the seventh nanostructure in the first direction, and Wherein, the interval between the fourth nanostructure and the fifth nanostructure in the first direction is greater than the interval between the eighth nanostructure and the ninth nanostructure in the first direction.

11. The image sensor according to claim 4, wherein: The fourth nanostructure is on a first diagonal line passing through a center of the first meta region, and the fifth nanostructure is on a second diagonal line crossing the first diagonal line and passing through a center of the first meta region.

12. The image sensor according to claim 11, wherein: The first meta-region further includes a plurality of nanostructures symmetrical to the second nanostructure and the third nanostructure with respect to the first diagonal line, and a plurality of nanostructures symmetrical to the second nanostructure and the third nanostructure with respect to the second diagonal line.

13. The image sensor according to claim 12, wherein: The first nanostructure, the second nanostructure, the third nanostructure, the fourth nanostructure and the fifth nanostructure have a cross-sectional size greater than 80 nm, and Among them, the multiple nanostructures that are symmetrical with the second nanostructure and the third nanostructure respectively relative to the first diagonal line, and the multiple nanostructures that are symmetrical with the second nanostructure and the third nanostructure respectively relative to the second diagonal line each have a cross-sectional size less than or equal to 80nm.

14. The image sensor according to claim 4, wherein: The first meta-region further includes a plurality of nanostructures that are symmetrical with respect to the horizontal center line in the second direction with respect to the first nanostructure, the second nanostructure, the third nanostructure, the fourth nanostructure, and the fifth nanostructure.

15. The image sensor according to claim 1, wherein: The first meta-area includes: The first-1 nanostructure and the first-2 nanostructure are symmetrical in the first direction; a second nanostructure and a third nanostructure, symmetrical in the first direction at a first distance from the horizontal center line in the second direction; and The fourth nanostructure and the fifth nanostructure are symmetrical in the first direction at a second distance from the horizontal center line in the second direction, and the second distance is smaller than the first distance. wherein the interval between the fourth nanostructure and the fifth nanostructure in the first direction is greater than the interval between the second nanostructure and the third nanostructure in the first direction, and The interval between the first-1 nanostructure and the first-2 nanostructure in the first direction is smaller than the interval between the second nanostructure and the third nanostructure in the first direction.

16. The image sensor according to claim 15, wherein: The average cross-sectional size of the first-1 nanostructure and the first-2 nanostructure is smaller than the average cross-sectional size of the second nanostructure, the third nanostructure, the fourth nanostructure and the fifth nanostructure.

17. The image sensor according to claim 15, wherein: A ratio of an average cross-sectional size of the first-1 nanostructure and the first-2 nanostructure to an average cross-sectional size of the second nanostructure, the third nanostructure, the fourth nanostructure, and the fifth nanostructure is less than or equal to 0.

85.

18. The image sensor according to claim 15, wherein: The first-1 nanostructure and the first-2 nanostructure are between the pair of the second nanostructure and the third nanostructure and the pair of the fourth nanostructure and the fifth nanostructure in the second direction relative to the horizontal center line.

19. The image sensor according to claim 1, wherein: The first meta region and the fourth meta region are arranged in a first diagonal direction, and the second meta region and the third meta region are arranged in a second diagonal direction crossing the first diagonal direction, and The fourth element region is rotated by 90 degrees relative to the first element region.

20. An electronic device comprising: a lens assembly configured to form an optical image of a subject; an image sensor configured to convert the optical image formed by the lens assembly into an electrical signal; as well as a processor configured to process the electrical signal generated by the image sensor, the image sensor comprising: a sensor substrate including first, second, third, and fourth pixels configured to sense light; and A nanophotonic lens array, comprising a first element region, a second element region, a third element region and a fourth element region, wherein the first element region corresponds to the first pixel, the second element region corresponds to the second pixel, the third element region corresponds to the third pixel, and the fourth element region corresponds to the fourth pixel, wherein each of the first element region, the second element region, the third element region and the fourth element region comprises a plurality of nanostructures, and the plurality of nanostructures are configured to perform color separation on incident light incident on the nanophotonic lens array, and to converge light of a first wavelength band onto the first pixel and the fourth pixel, converge light of a second wavelength band onto the second pixel, and converge light of a third wavelength band onto the third pixel, wherein the first meta-region includes a plurality of pairs at different distances from a horizontal center line in a second direction perpendicular to the first direction, each pair having two nanostructures symmetrical in the first direction, the horizontal center line passing through the center of the first meta-region along the first direction, and In which, in the direction toward the horizontal center line in the second direction, the spacing between the two symmetrical nanostructures of the corresponding pairs among the multiple pairs in the first direction increases, and in the direction away from the horizontal center line in the second direction, the spacing between the two symmetrical nanostructures of the corresponding pairs among the multiple pairs in the first direction decreases.

Images