Photoelectric sensor, manufacturing method thereof and electronic equipment

Abstract

The invention discloses a photoelectric sensor and a manufacturing method thereof and electronic equipment, the photoelectric sensor comprises a substrate, a first amorphous silicon photoelectric conversion unit and a second amorphous silicon photoelectric conversion unit, the first amorphous silicon photoelectric conversion unit and the second amorphous silicon photoelectric conversion unit are stacked on the substrate, visible light passes through the first amorphous silicon photoelectric conversion unit and the second amorphous silicon photoelectric conversion unit in sequence, and the first amorphous silicon photoelectric conversion unit and the second amorphous silicon photoelectric conversion unit are stacked on the substrate. The first amorphous silicon photoelectric conversion unit is used for absorbing blue light and green light, the second amorphous silicon photoelectric conversion unit is used for absorbing red light, or the first amorphous silicon photoelectric conversion unit is used for absorbing blue light, the second amorphous silicon photoelectric conversion unit is used for absorbing green light and red light, and the first amorphous silicon photoelectric conversion unit and the second amorphous silicon photoelectric conversion unit are stacked on the substrate from top to bottom. Or, the first amorphous silicon photoelectric conversion unit and the second amorphous silicon photoelectric conversion unit are stacked on the substrate from bottom to top, at the moment, visible light enters from the lower portion of the substrate, and the substrate is a light-transmitting substrate. According to the invention, the light absorption capability and sensitivity of visible light are improved, and the area of the photoelectric sensor is reduced.

Description

Technical Field

[0001] The present invention relates to the technical field of optoelectronic sensors. More specifically, the present invention relates to an optoelectronic sensor, a manufacturing method thereof, and an electronic device. Background Art

[0002] With the increasingly wide application of light sensing products, the requirements for the sensitivity and light absorption ability of light sensing are also getting higher and higher; the photodiode is an important optoelectronic conversion structure of light sensing products. Therefore, the requirements for the light absorption ability and sensitivity of the photodiode in the visible light band are also getting higher and higher; thus, how to improve the light absorption ability and sensitivity of the photodiode has become an urgent problem to be solved. Summary of the Invention

[0003] To solve the above technical problems, the present invention innovatively provides an optoelectronic sensor, a manufacturing method thereof, and an electronic device. The optoelectronic conversion unit is made of amorphous silicon material, which has a light absorption coefficient one order of magnitude higher than that of single crystal silicon material in the visible light band, and its spectral characteristics are closer to those of the human eye, with higher light absorption ability and sensitivity; the optoelectronic conversion units are stacked, reducing the area of the optoelectronic sensor, increasing the light absorption efficiency, and reducing the cost; the manufacturing process of the optoelectronic conversion unit made of amorphous silicon material is simple, and the manufacturing temperature is compatible with the CMOS process temperature, and the device structure can be further processed on the substrate on which the CMOS circuit or other devices have been fabricated, further reducing the area of the optoelectronic sensor, improving the signal processing efficiency of the optoelectronic sensor, and reducing the cost.

[0004] To achieve the above technical objectives, the first aspect of the present invention discloses an optoelectronic sensor, including a substrate, a first amorphous silicon optoelectronic conversion unit, and a second amorphous silicon optoelectronic conversion unit.

[0005] The first amorphous silicon optoelectronic conversion unit and the second amorphous silicon optoelectronic conversion unit are stacked on the substrate, and visible light sequentially passes through the first amorphous silicon optoelectronic conversion unit and the second amorphous silicon optoelectronic conversion unit. The first amorphous silicon optoelectronic conversion unit and the second amorphous silicon optoelectronic conversion unit are used to sequentially absorb blue light, green light, and red light. The first amorphous silicon optoelectronic conversion unit is used to absorb blue light and green light, and the second amorphous silicon optoelectronic conversion unit is used to absorb red light, or the first amorphous silicon optoelectronic conversion unit is used to absorb blue light, and the second amorphous silicon optoelectronic conversion unit is used to absorb green light and red light.

[0006] The first amorphous silicon optoelectronic conversion unit and the second amorphous silicon optoelectronic conversion unit are stacked on the substrate from top to bottom.

[0007] Alternatively, the first amorphous silicon photoelectric conversion unit and the second amorphous silicon photoelectric conversion unit are stacked on the substrate from bottom to top. At this time, visible light is incident from below the substrate, and the substrate is a light-transmitting substrate.

[0008] Further, the first amorphous silicon photoelectric conversion unit includes a first amorphous silicon photodiode and a second amorphous silicon photodiode arranged in sequence along the propagation direction of visible light rays. The second amorphous silicon photoelectric conversion unit includes a third amorphous silicon photodiode. The first amorphous silicon photodiode includes a first amorphous silicon photoelectric conversion layer, the second amorphous silicon photodiode includes a second amorphous silicon photoelectric conversion layer, and the third amorphous silicon photodiode includes a third amorphous silicon photoelectric conversion layer. The thickness of the first amorphous silicon photoelectric conversion layer < the thickness of the second amorphous silicon photoelectric conversion layer < the thickness of the third amorphous silicon photoelectric conversion layer.

[0009] Further, the first amorphous silicon photodiode is used to absorb blue light, the second amorphous silicon photodiode is used to absorb green light, and the third amorphous silicon photodiode is used to absorb red light.

[0010] Further, the thickness of the first amorphous silicon photoelectric conversion layer is 10 - 100 nm, the thickness of the second amorphous silicon photoelectric conversion layer is 50 - 200 nm, and the thickness of the third amorphous silicon photoelectric conversion layer is 200 - 500 nm.

[0011] Further, the first amorphous silicon photoelectric conversion layer includes a p-doped amorphous silicon layer, an intrinsic amorphous silicon layer, and an n-doped amorphous silicon layer arranged in sequence from top to bottom or from bottom to top. The second amorphous silicon photoelectric conversion layer includes a p-doped amorphous silicon layer, an intrinsic amorphous silicon layer, and an n-doped amorphous silicon layer arranged in sequence from top to bottom or from bottom to top. The third amorphous silicon photoelectric conversion layer includes a p-doped amorphous silicon layer, an intrinsic amorphous silicon layer, and an n-doped amorphous silicon layer arranged in sequence from top to bottom or from bottom to top. The thickness of the p-doped amorphous silicon layer of the first amorphous silicon photoelectric conversion layer is 5 - 30 nm, the thickness of the intrinsic amorphous silicon layer is 10 - 50 nm, and the thickness of the n-doped amorphous silicon layer is 5 - 30 nm. The thickness of the p-doped amorphous silicon layer of the second amorphous silicon photoelectric conversion layer is 5 - 30 nm, the thickness of the intrinsic amorphous silicon layer is 50 - 200 nm, and the thickness of the n-doped amorphous silicon layer is 5 - 30 nm. The thickness of the p-doped amorphous silicon layer of the third amorphous silicon photoelectric conversion layer is 5 - 30 nm, the thickness of the intrinsic amorphous silicon layer is 200 - 500 nm, and the thickness of the n-doped amorphous silicon layer is 5 - 30 nm.

[0012] Further, the first amorphous silicon photoelectric conversion unit includes a fourth amorphous silicon photodiode, the second amorphous silicon photoelectric conversion unit includes a fifth amorphous silicon photodiode, the fourth amorphous silicon photodiode is used to absorb blue light and green light, and the fifth amorphous silicon photodiode is used to absorb red light.

[0013] Further, the fourth amorphous silicon photodiode includes a fourth amorphous silicon photoelectric conversion layer, the fifth amorphous silicon photodiode includes a fifth amorphous silicon photoelectric conversion layer, the thickness of the fourth amorphous silicon photoelectric conversion layer is 50 - 300 nm, and the thickness of the fifth amorphous silicon photoelectric conversion layer is 200 - 500 nm.

[0014] Further, the fourth amorphous silicon photodiode includes a fourth amorphous silicon photoelectric conversion layer, the fourth amorphous silicon photoelectric conversion layer includes a p-doped amorphous silicon layer, an intrinsic amorphous silicon layer, and an n-doped amorphous silicon layer arranged in sequence from top to bottom or from bottom to top, the fifth amorphous silicon photodiode includes a fifth amorphous silicon photoelectric conversion layer, the fifth amorphous silicon photoelectric conversion layer includes a p-doped amorphous silicon layer, an intrinsic amorphous silicon layer, and an n-doped amorphous silicon layer arranged in sequence from top to bottom or from bottom to top, the thickness of the p-doped amorphous silicon layer of the fourth amorphous silicon photoelectric conversion layer is 5 - 50 nm, the thickness of the intrinsic amorphous silicon layer is 50 - 250 nm, the thickness of the n-doped amorphous silicon layer is 5 - 50 nm, the thickness of the p-doped amorphous silicon layer of the fifth amorphous silicon photoelectric conversion layer is 5 - 30 nm, the thickness of the intrinsic amorphous silicon layer is 200 - 500 nm, and the thickness of the n-doped amorphous silicon layer is 5 - 30 nm.

[0015] Further, the first amorphous silicon photoelectric conversion unit includes a sixth amorphous silicon photodiode, the second amorphous silicon photoelectric conversion unit includes a seventh amorphous silicon photodiode, the sixth amorphous silicon photodiode is used to absorb blue light, and the seventh amorphous silicon photodiode is used to absorb green light and red light.

[0016] Further, the sixth amorphous silicon photodiode includes a sixth amorphous silicon photoelectric conversion layer, the seventh amorphous silicon photodiode includes a seventh amorphous silicon photoelectric conversion layer, the thickness of the sixth amorphous silicon photoelectric conversion layer is 10 - 100 nm, and the thickness of the seventh amorphous silicon photoelectric conversion layer is 200 - 1000 nm.

[0017] Further, the sixth amorphous silicon photodiode includes a sixth amorphous silicon photoelectric conversion layer, which includes a p-doped amorphous silicon layer, an intrinsic amorphous silicon layer, and an n-doped amorphous silicon layer arranged in sequence from top to bottom or from bottom to top. The seventh amorphous silicon photodiode includes a seventh amorphous silicon photoelectric conversion layer, which includes a p-doped amorphous silicon layer, an intrinsic amorphous silicon layer, and an n-doped amorphous silicon layer arranged in sequence from top to bottom or from bottom to top. The thickness of the p-doped amorphous silicon layer of the sixth amorphous silicon photoelectric conversion layer is 5 - 30 nm, the thickness of the intrinsic amorphous silicon layer is 10 - 50 nm, and the thickness of the n-doped amorphous silicon layer is 5 - 30 nm. The thickness of the p-doped amorphous silicon layer of the seventh amorphous silicon photoelectric conversion layer is 5 - 50 nm, the thickness of the intrinsic amorphous silicon layer is 200 - 800 nm, and the thickness of the n-doped amorphous silicon layer is 5 - 50 nm.

[0018] Further, the amorphous silicon photodiodes of the first amorphous silicon photoelectric conversion unit and the second amorphous silicon photoelectric conversion unit both include a top electrode disposed on the top layer of the amorphous silicon photodiode and a bottom electrode disposed on the bottom layer of the amorphous silicon photodiode. The top electrode and the bottom electrode are used to transfer the induced charges generated by the amorphous silicon photodiode absorbing light and lead out the electrical signals. The thickness of the top electrode is 10 - 200 nm, and the thickness of the bottom electrode is 10 - 200 nm.

[0019] Further, the p-type doping concentration of the p-doped amorphous silicon layer is 1x10 18 to 1x10 22 atoms / cm³, and the n-type doping concentration of the n-doped amorphous silicon layer is 1x10 18 to 1x10 22 atoms / cm³.

[0020] Further, an isolation layer is provided between the substrate and the amorphous silicon photoelectric conversion unit thereon.

[0021] Further, a light-transmitting isolation layer is provided between adjacent amorphous silicon photodiodes of the first amorphous silicon photoelectric conversion unit and the second amorphous silicon photoelectric conversion unit.

[0022] Further, a passivation protection layer is provided on the top layer of the photoelectric sensor.

[0023] To achieve the above technical objectives, a second aspect of the present invention discloses a manufacturing method of the photoelectric sensor described in the first aspect. The manufacturing method specifically includes:

[0024] Providing a substrate,

[0025] Fabricate a first amorphous silicon photovoltaic conversion unit on the substrate, and then fabricate a second amorphous silicon photovoltaic conversion unit on the first amorphous silicon photovoltaic conversion unit; or,

[0026] Fabricate a second amorphous silicon photovoltaic conversion unit on the substrate, and then fabricate a first amorphous silicon photovoltaic conversion unit on the second amorphous silicon photovoltaic conversion unit.

[0027] Furthermore, the first amorphous silicon photovoltaic conversion unit includes one or two amorphous silicon photodiodes stacked up and down, the second amorphous silicon photovoltaic conversion unit includes one amorphous silicon photodiode, and all the amorphous silicon photodiodes are fabricated in sequence from bottom to top.

[0028] Furthermore, the amorphous silicon photodiode includes an amorphous silicon photovoltaic conversion layer, the amorphous silicon photovoltaic conversion layer includes a p-doped amorphous silicon layer, an intrinsic amorphous silicon layer, and an n-doped amorphous silicon layer arranged in sequence from top to bottom or from bottom to top, and each layer of the amorphous silicon photovoltaic conversion layer is fabricated in sequence from bottom to top.

[0029] Furthermore, the amorphous silicon photodiode further includes a top electrode disposed on the top layer of the amorphous silicon photodiode and a bottom electrode disposed on the bottom layer of the amorphous silicon photodiode. The manufacturing method specifically includes:

[0030] Fabricate the bottom electrode of the amorphous silicon photodiode before fabricating the amorphous silicon photovoltaic conversion layer of the amorphous silicon photodiode, then fabricate the amorphous silicon photovoltaic conversion layer on the bottom electrode, and then fabricate the top electrode on the amorphous silicon photovoltaic conversion layer.

[0031] Furthermore, the top electrode includes a top electrode body and a top electrode lead-out portion, the top electrode lead-out portion is disposed at the edge of the top electrode, the bottom electrode includes a bottom electrode body and a bottom electrode lead-out portion, the bottom electrode lead-out portion is disposed at the edge of the bottom electrode, and the manufacturing method specifically includes:

[0032] After the first amorphous silicon photovoltaic conversion unit and the second amorphous silicon photovoltaic conversion unit are fabricated, etch to expose the top electrode lead-out portion and the bottom electrode lead-out portion of each amorphous silicon photodiode respectively.

[0033] Furthermore, an isolation layer is provided between the substrate and the amorphous silicon photovoltaic conversion unit thereon. The manufacturing method further includes:

[0034] Before fabricating the first amorphous silicon photovoltaic conversion unit and the second amorphous silicon photovoltaic conversion unit, first fabricate the isolation layer on the substrate, and then fabricate the amorphous silicon photovoltaic conversion unit on the upper surface of the isolation layer.

[0035] Further, a light-transmitting isolation layer is provided between adjacent amorphous silicon photodiodes, and the manufacturing method specifically includes:

[0036] After manufacturing the lower amorphous silicon photodiode, the light-transmitting isolation layer is manufactured on the upper surface of the amorphous silicon photodiode, and then the upper-layer amorphous silicon photodiode is manufactured on the upper surface of the light-transmitting isolation layer.

[0037] Further, a passivation protection layer is provided on the top layer of the photoelectric sensor, and the manufacturing method further includes:

[0038] After the first amorphous silicon photoelectric conversion unit and the second amorphous silicon photoelectric conversion unit are manufactured, the passivation protection layer is manufactured on the upper surface of the uppermost amorphous silicon photoelectric conversion unit.

[0039] To achieve the above technical objectives, a third aspect of the present invention discloses an electronic device, including the photoelectric sensor described in the first aspect.

[0040] The beneficial effects of the present invention are as follows:

[0041] The present invention provides a photoelectric sensor, a manufacturing method thereof, and an electronic device. The photoelectric conversion unit is made of amorphous silicon material, and the light absorption coefficient is one order of magnitude higher than that of single-crystalline silicon material in the visible light band. The spectral characteristics are closer to those of the human eye, and the light absorption ability and sensitivity are higher. The photoelectric conversion units are stacked, reducing the area of the photoelectric sensor, increasing the light absorption efficiency, and reducing the cost. The manufacturing process of the amorphous silicon material photoelectric conversion unit is simple, and the manufacturing temperature is compatible with the CMOS process temperature. The device structure can be further processed on the substrate on which the CMOS circuit or other devices have been manufactured, further reducing the area of the photoelectric sensor, improving the signal processing efficiency of the photoelectric sensor, and reducing the cost. Description of the Drawings

[0042] Figure 1 is a longitudinal sectional view of the photoelectric sensor according to the first embodiment of the present invention.

[0043] Figure 2 is a longitudinal sectional view of the photoelectric sensor according to the second embodiment of the present invention.

[0044] Figure 3 is a longitudinal sectional view of the photoelectric sensor according to the third embodiment of the present invention.

[0045] Figure 4 is a longitudinal sectional view of the photoelectric sensor according to the fourth embodiment of the present invention.

[0046] Figure 5 is a longitudinal sectional view of the photoelectric sensor according to the fifth embodiment of the present invention.

[0047] Figure 6 It is a longitudinal sectional view of the optoelectronic sensor according to the sixth embodiment of the present invention.

[0048] Figure 7 It is a schematic diagram of the spectral response of the optoelectronic sensor according to the first embodiment of the present invention to visible light.

[0049] Figure 8a It is a schematic diagram of step S1 of the manufacturing method of the optoelectronic sensor according to the first embodiment of the present invention.

[0050] Figure 8b It is a schematic diagram of step S2 of the manufacturing method of the optoelectronic sensor according to the first embodiment of the present invention.

[0051] Figure 8c It is a schematic diagram of step S3 of the manufacturing method of the optoelectronic sensor according to the first embodiment of the present invention.

[0052] Figure 8d It is a schematic diagram of step S4 of the manufacturing method of the optoelectronic sensor according to the first embodiment of the present invention.

[0053] Figure 8e It is a schematic diagram of step S5 of the manufacturing method of the optoelectronic sensor according to the first embodiment of the present invention.

[0054] Figure 8f It is a schematic diagram of step S6 of the manufacturing method of the optoelectronic sensor according to the first embodiment of the present invention.

[0055] Figure 8g It is a schematic diagram of step S7 of the manufacturing method of the optoelectronic sensor according to the first embodiment of the present invention.

[0056] Figure 8h It is a schematic diagram of step S8 of the manufacturing method of the optoelectronic sensor according to the first embodiment of the present invention.

[0057] In the figure,

[0058] 1. Substrate; 2. First amorphous silicon photoelectric conversion unit; 21. First amorphous silicon photodiode; 211. First amorphous silicon photoelectric conversion layer; 22. Second amorphous silicon photodiode; 221. Second amorphous silicon photoelectric conversion layer; 23. Fourth amorphous silicon photodiode; 231. Fourth amorphous silicon photoelectric conversion layer; 24. Sixth amorphous silicon photodiode; 241. Sixth amorphous silicon photoelectric conversion layer; 3. Second amorphous silicon photoelectric conversion unit; 31. Third amorphous silicon photodiode; 311. Third amorphous silicon photoelectric conversion layer; 32. Fifth amorphous silicon photodiode; 321. Fifth amorphous silicon photoelectric conversion layer; 33. Seventh amorphous silicon photodiode; 331. Seventh amorphous silicon photoelectric conversion layer; 202. Top electrode; 2021. Top electrode body; 2022. Top electrode lead-out part; 203. Bottom electrode; 2031. Bottom electrode body; 2032. Bottom electrode lead-out part; 4. Isolation layer; 5. Transparent isolation layer; 6. Passivation protection layer. Detailed implementation mode

[0059] The following combines the accompanying drawings of the specification to make a detailed explanation and description of the photoelectric sensor, its manufacturing method and electronic device provided by the present invention.

[0060] This embodiment specifically discloses a photoelectric sensor, as Figures 1 - 6 shown, including a substrate 1, a first amorphous silicon photoelectric conversion unit 2 and a second amorphous silicon photoelectric conversion unit 3. The first amorphous silicon photoelectric conversion unit 2 and the second amorphous silicon photoelectric conversion unit 3 are stacked on the substrate 1. The substrate 1 is used to carry the first amorphous silicon photoelectric conversion unit 2 and the second amorphous silicon photoelectric conversion unit 3. Visible light passes through the first amorphous silicon photoelectric conversion unit 2 and the second amorphous silicon photoelectric conversion unit 3 in sequence. The first amorphous silicon photoelectric conversion unit 2 and the second amorphous silicon photoelectric conversion unit 3 are used to absorb blue light, green light and red light in sequence. The first amorphous silicon photoelectric conversion unit 2 is used to absorb blue light and green light, and the second amorphous silicon photoelectric conversion unit 3 is used to absorb red light; alternatively, the first amorphous silicon photoelectric conversion unit 2 is used to absorb blue light, and the second amorphous silicon photoelectric conversion unit 3 is used to absorb green light and red light.

[0061] As Figure 1 、 3 and 5 shown, the first amorphous silicon photoelectric conversion unit 2 and the second amorphous silicon photoelectric conversion unit 3 are stacked on the substrate 1 from top to bottom. At this time, visible light enters from above the first amorphous silicon photoelectric conversion unit 2. In this case, the material of the substrate 1 can be silicon, germanium or glass.

[0062] In another embodiment, as Figure 2 、 4As shown in FIGS. 5 and 6, the first amorphous silicon photoelectric conversion unit 2 and the second amorphous silicon photoelectric conversion unit 3 are stacked on the substrate 1 from bottom to top. At this time, visible light enters from below the substrate 1, and the substrate 1 is a light-transmitting substrate. Optionally, the substrate 1 is made of a transparent material, preferably glass or a transparent organic material.

[0063] The substrate 1 can also be a substrate on which a CMOS (Complementary Metal Oxide Semiconductor) circuit or other devices have been fabricated. The first amorphous silicon photoelectric conversion unit 2 and the second amorphous silicon photoelectric conversion unit 3 can be fabricated above the CMOS circuit or other devices. Since the first amorphous silicon photoelectric conversion unit 2 and the second amorphous silicon photoelectric conversion unit 3 are made of amorphous silicon, complex processes are not required during fabrication. Generally, they are deposited by CVD (Chemical Vapor Deposition). Deposition can be continued on the processed wafer. The deposition temperature of amorphous silicon is relatively low (about 200 °C), which is compatible with the CMOS process temperature. Therefore, the device structure can be further fabricated above the circuit on the substrate 1 with a circuit, further reducing the area of the photoelectric sensor, improving the signal processing efficiency of the photoelectric sensor, and reducing costs.

[0064] When visible light is incident, according to the penetration characteristics of light, the longer the wavelength, the stronger the penetration of light. The wavelength of red light is the longest compared to blue and green light, so its penetration is strong. The wavelength of blue light is the shortest and its penetration is weak. Therefore, among the visible light in contact with the amorphous silicon photoelectric conversion unit, blue (Blue) light is absorbed first, then green (Green) light is absorbed, and finally red (Red) light is absorbed.

[0065] In some embodiments, such as Figure 1 and 2As shown, the first amorphous silicon photoelectric conversion unit 2 includes a first amorphous silicon photodiode 21 and a second amorphous silicon photodiode 22 arranged in sequence along the propagation direction of visible light rays. The second amorphous silicon photoelectric conversion unit 3 includes a third amorphous silicon photodiode 31. The first amorphous silicon photodiode 21 includes a first amorphous silicon photoelectric conversion layer 211, the second amorphous silicon photodiode 22 includes a second amorphous silicon photoelectric conversion layer 221, and the third amorphous silicon photodiode 31 includes a third amorphous silicon photoelectric conversion layer 311. The thickness of the first amorphous silicon photoelectric conversion layer 211 < the thickness of the second amorphous silicon photoelectric conversion layer 221 < the thickness of the third amorphous silicon photoelectric conversion layer 311. That is, three stacked amorphous silicon photodiodes are provided on the substrate 1, and the thicknesses of the amorphous silicon photoelectric conversion layers of the first amorphous silicon photodiode 21, the second amorphous silicon photodiode 22, and the third amorphous silicon photodiode 31 increase in sequence, conforming to the light absorption characteristics. It is beneficial for the relatively thin amorphous silicon photodiode that first contacts the light to allow enough light to penetrate to the lower layer, avoiding all incident light being absorbed by the amorphous silicon photodiode that first contacts it. Preferably, the first amorphous silicon photodiode 21 is used to absorb blue light, the second amorphous silicon photodiode 22 is used to absorb green light, and the third amorphous silicon photodiode 31 is used to absorb red light, obtaining three photocurrents I1, I2, and I3.

[0066] As Figure 1 shown, the first amorphous silicon photodiode 21, the second amorphous silicon photodiode 22, and the third amorphous silicon photodiode 31 are arranged on the substrate 1 from top to bottom in sequence. Visible light enters from above the first amorphous silicon photodiode 21. The blue light is absorbed by the first amorphous silicon photodiode 21, the green light and the red light enter the second amorphous silicon photodiode 22, the green light is absorbed by the second amorphous silicon photodiode 22, and the red light enters the third amorphous silicon photodiode 31 and is absorbed.

[0067] As Figure 2 shown, visible light enters from below the substrate 1 (i.e., the back surface of the substrate 1). The first amorphous silicon photodiode 21 is provided on the substrate 1, the second amorphous silicon photodiode 22 is provided on the first amorphous silicon photodiode 21, and the third amorphous silicon photodiode 31 is provided on the second amorphous silicon photodiode 22. Visible light first contacts the first amorphous silicon photodiode 21. The blue light is absorbed by the first amorphous silicon photodiode 21, the green light and the red light enter the second amorphous silicon photodiode 22, the green light is absorbed by the second amorphous silicon photodiode 22, and the red light enters the third amorphous silicon photodiode 31 and is absorbed.

[0068] The principle of a photodiode is based on the pn junction. It is a photoelectric conversion device. When there is no light illumination, there is only a weak reverse current. When there is light illumination, new electrons and holes are generated in the pn junction under the action of light. Under the action of the electric field, the induced photocurrent increases sharply, and there is a positive correlation between the current magnitude and the light intensity. It is a photosensitive device. For an amorphous silicon photodiode, an intrinsic layer, the i layer, is usually added between the p-doped amorphous silicon layer and the n-doped amorphous silicon layer, that is, a p-i-n (positive-intrinsic-negative) or n-i-p structure is formed. The i layer serves as the main light absorption layer, and its thickness is greater than that of the p-doped amorphous silicon layer and the n-doped amorphous silicon layer, increasing the barrier thickness and thus improving the sensitivity of the photodiode.

[0069] The first amorphous silicon photoelectric conversion layer 211 includes a p-doped amorphous silicon layer (denoted as p in the figure), an intrinsic amorphous silicon layer (denoted as i in the figure), and an n-doped amorphous silicon layer (denoted as n in the figure) which are sequentially arranged from top to bottom or from bottom to top. The second amorphous silicon photoelectric conversion layer 221 includes a p-doped amorphous silicon layer, an intrinsic amorphous silicon layer, and an n-doped amorphous silicon layer which are sequentially arranged from top to bottom or from bottom to top. The third amorphous silicon photoelectric conversion layer 311 includes a p-doped amorphous silicon layer, an intrinsic amorphous silicon layer, and an n-doped amorphous silicon layer which are sequentially arranged from top to bottom or from bottom to top. The p-doped amorphous silicon layer is a layer structure in which a p-type substance is doped in amorphous silicon; the n-doped amorphous silicon layer is a layer structure in which an n-type substance is doped in amorphous silicon; this application does not make special limitations on the arrangement order of the n-doped amorphous silicon layer, the intrinsic amorphous silicon layer, and the p-doped amorphous silicon layer. The first amorphous silicon photoelectric conversion layer 211, the second amorphous silicon photoelectric conversion layer 221, and the third amorphous silicon photoelectric conversion layer 311 can all be of p-i-n structure, or all be of n-i-p structure, or some be of p-i-n structure and some be of n-i-p structure according to the order of light incidence. The thickness of the p-doped amorphous silicon layer of the first amorphous silicon photoelectric conversion layer 211 is 5 - 30 nm, the thickness of the intrinsic amorphous silicon layer is 10 - 50 nm, and the thickness of the n-doped amorphous silicon layer is 5 - 30 nm. The thickness of the p-doped amorphous silicon layer of the second amorphous silicon photoelectric conversion layer 221 is 5 - 30 nm, the thickness of the intrinsic amorphous silicon layer is 50 - 200 nm, and the thickness of the n-doped amorphous silicon layer is 5 - 30 nm. The thickness of the p-doped amorphous silicon layer of the third amorphous silicon photoelectric conversion layer 311 is 5 - 30 nm, the thickness of the intrinsic amorphous silicon layer is 200 - 500 nm, and the thickness of the n-doped amorphous silicon layer is 5 - 30 nm. While ensuring the light absorption ability and sensitivity, the size of the optical sensor is reduced. The thickness of the intrinsic amorphous silicon layer of each amorphous silicon photoelectric conversion layer is greater than the thickness of the p-doped amorphous silicon layer, and the thickness of the intrinsic amorphous silicon layer is also greater than the thickness of the n-doped amorphous silicon layer. Preferably, the thicknesses of the intrinsic amorphous silicon layers of the first amorphous silicon photoelectric conversion layer 211, the second amorphous silicon photoelectric conversion layer 221, and the third amorphous silicon photoelectric conversion layer 311 increase in sequence, and the thickness relationships between the n-doped amorphous silicon layers and the thickness relationships between the p-doped amorphous silicon layers of the first amorphous silicon photoelectric conversion layer 211, the second amorphous silicon photoelectric conversion layer 221, and the third amorphous silicon photoelectric conversion layer 311 are not specifically limited.

[0070] Preferably, the thickness of the first amorphous silicon photoelectric conversion layer 211 is 10 - 100 nm, the thickness of the second amorphous silicon photoelectric conversion layer 221 is 50 - 200 nm, and the thickness of the third amorphous silicon photoelectric conversion layer 311 is 200 - 500 nm. The specific thicknesses of the p-doped amorphous silicon layer, the intrinsic amorphous silicon layer, and the n-doped amorphous silicon layer can be adjusted as needed, while reducing the thickness size of the optical sensor while ensuring the light absorption ability and sensitivity.

[0071] In some embodiments, such asFigure 3 and 4 As shown, the first amorphous silicon photoelectric conversion unit 2 includes a fourth amorphous silicon photodiode 23, and the second amorphous silicon photoelectric conversion unit 3 includes a fifth amorphous silicon photodiode 32, that is, two stacked amorphous silicon photodiodes are provided on the substrate 1. The fourth amorphous silicon photodiode 23 is used to absorb blue light and green light, and the fifth amorphous silicon photodiode 32 is used to absorb red light. As Figure 3 shown, the fourth amorphous silicon photodiode 23 and the fifth amorphous silicon photodiode 32 are arranged on the substrate 1 from top to bottom, and visible light enters from above the fourth amorphous silicon photodiode 23; in another embodiment, as Figure 4 shown, the fourth amorphous silicon photodiode 23 is arranged on the substrate 1, and the fifth amorphous silicon photodiode 32 is arranged on the fourth amorphous silicon photodiode 23, and visible light enters from below the substrate 1. The visible light first contacts the fourth amorphous silicon photodiode 23, and the blue light and green light are absorbed by the fourth amorphous silicon photodiode 23, and the red light enters the fifth amorphous silicon photodiode 32 and is absorbed.

[0072] Optionally, the fourth amorphous silicon photodiode 23 includes a fourth amorphous silicon photoconversion layer 231, and the fourth amorphous silicon photoconversion layer 231 includes a p-doped amorphous silicon layer, an intrinsic amorphous silicon layer, and an n-doped amorphous silicon layer arranged in sequence from top to bottom or from bottom to top. The fifth amorphous silicon photodiode 32 includes a fifth amorphous silicon photoconversion layer 321, and the fifth amorphous silicon photoconversion layer 321 includes a p-doped amorphous silicon layer, an intrinsic amorphous silicon layer, and an n-doped amorphous silicon layer arranged in sequence from top to bottom or from bottom to top. The thickness of the p-doped amorphous silicon layer of the fourth amorphous silicon photoconversion layer 231 is 5 - 50 nm, the thickness of the intrinsic amorphous silicon layer is 50 - 250 nm, and the thickness of the n-doped amorphous silicon layer is 5 - 50 nm. The thickness of the p-doped amorphous silicon layer of the fifth amorphous silicon photoconversion layer 321 is 5 - 30 nm, the thickness of the intrinsic amorphous silicon layer is 200 - 500 nm, and the thickness of the n-doped amorphous silicon layer is 5 - 30 nm. While ensuring the light absorption ability and sensitivity, the size of the optical sensor is reduced. The thickness of the intrinsic amorphous silicon layer of each amorphous silicon photoconversion layer is greater than the thickness of the p-doped amorphous silicon layer, and the thickness of the intrinsic amorphous silicon layer is also greater than the thickness of the n-doped amorphous silicon layer.

[0073] Preferably, the thickness of the fourth amorphous silicon photoconversion layer 231 is 50 - 300 nm, and the thickness of the fifth amorphous silicon photoconversion layer 321 is 200 - 500 nm. The specific thicknesses of the p-doped amorphous silicon layer, the intrinsic amorphous silicon layer, and the n-doped amorphous silicon layer can be adjusted as needed, while reducing the size of the optical sensor while ensuring the light absorption ability and sensitivity.

[0074] In some embodiments, such as Figure 5 and 6As shown, the first amorphous silicon photoelectric conversion unit 2 includes a sixth amorphous silicon photodiode 24, and the second amorphous silicon photoelectric conversion unit 3 includes a seventh amorphous silicon photodiode 33, that is, two stacked amorphous silicon photodiodes are provided on the substrate 1. The sixth amorphous silicon photodiode 24 is used to absorb blue light, and the seventh amorphous silicon photodiode 33 is used to absorb green light and red light. As Figure 5 shown, the sixth amorphous silicon photodiode 24 and the seventh amorphous silicon photodiode 33 are arranged on the substrate 1 from top to bottom, and visible light enters from above the sixth amorphous silicon photodiode 24; in another embodiment, as Figure 6 shown, the sixth amorphous silicon photodiode 24 is arranged on the substrate 1, and the seventh amorphous silicon photodiode 33 is arranged on the sixth amorphous silicon photodiode 24, and visible light enters from below the substrate 1. The visible light first contacts the sixth amorphous silicon photodiode 24, the blue light is absorbed by the sixth amorphous silicon photodiode 24, and the green light and red light enter the seventh amorphous silicon photodiode 33 and are absorbed. The sixth amorphous silicon photodiode 24 includes a sixth amorphous silicon photoelectric conversion layer 241, and the seventh amorphous silicon photodiode 33 includes a seventh amorphous silicon photoelectric conversion layer 331. The thickness of the seventh amorphous silicon photoelectric conversion layer 331 is greater than the thickness of the sixth amorphous silicon photoelectric conversion layer 241.

[0075] Optionally, the sixth amorphous silicon photoelectric conversion layer 241 includes a p-doped amorphous silicon layer, an intrinsic amorphous silicon layer, and an n-doped amorphous silicon layer arranged in sequence from top to bottom or from bottom to top. The seventh amorphous silicon photoelectric conversion layer 331 includes a p-doped amorphous silicon layer, an intrinsic amorphous silicon layer, and an n-doped amorphous silicon layer arranged in sequence from top to bottom or from bottom to top. The thickness of the p-doped amorphous silicon layer of the sixth amorphous silicon photoelectric conversion layer 241 is 5 - 30 nm, the thickness of the intrinsic amorphous silicon layer is 10 - 50 nm, and the thickness of the n-doped amorphous silicon layer is 5 - 30 nm. The thickness of the p-doped amorphous silicon layer of the seventh amorphous silicon photoelectric conversion layer 331 is 5 - 50 nm, the thickness of the intrinsic amorphous silicon layer is 200 - 800 nm, and the thickness of the n-doped amorphous silicon layer is 5 - 50 nm. While ensuring the light absorption ability and sensitivity, the size of the optical sensor is reduced. The thickness of the intrinsic amorphous silicon layer of each amorphous silicon photoelectric conversion layer is greater than the thickness of the p-doped amorphous silicon layer, and the thickness of the intrinsic amorphous silicon layer is also greater than the thickness of the n-doped amorphous silicon layer. Preferably, the thickness of the intrinsic amorphous silicon layer of the sixth amorphous silicon photoelectric conversion layer 241 and the seventh amorphous silicon photoelectric conversion layer 331 increases in sequence, and the thickness relationship between the n-doped amorphous silicon layers and the thickness relationship between the p-doped amorphous silicon layers of the sixth amorphous silicon photoelectric conversion layer 241 and the seventh amorphous silicon photoelectric conversion layer 331 are not specifically limited.

[0076] Preferably, the thickness of the sixth amorphous silicon photoelectric conversion layer 241 is 10-100nm, the thickness of the seventh amorphous silicon photoelectric conversion layer 331 is 200-1000nm, and the specific thicknesses of the p-doped amorphous silicon layer, the intrinsic amorphous silicon layer and the n-doped amorphous silicon layer can be adjusted as needed to reduce the size of the optical sensor while ensuring the light absorption capacity and sensitivity.

[0077] Optionally, the p-type doping concentration of the p-doped amorphous silicon layer is 1x10 18 to 1x10 22 atoms / cm3, the n-type doping concentration of the n-doped amorphous silicon layer is 1x10 18 to 1x10 22 atoms / cubic centimeter, with high sensitivity. The p-type substance doped in the p-doped amorphous silicon layer may be boron, and the n-type substance doped in the n-doped amorphous silicon layer may be phosphorus.

[0078] Alternatively, if Figures 1 - 6 As shown, the amorphous silicon photodiodes of the first amorphous silicon photoelectric conversion unit 2 and the second amorphous silicon photoelectric conversion unit 3 both include a top electrode 202 arranged on the top layer of the amorphous silicon photodiode and a bottom electrode 203 arranged on the bottom layer of the amorphous silicon photodiode. The top electrode 202 is arranged on the amorphous silicon photoelectric conversion layer, and the bottom electrode 203 is arranged below the amorphous silicon photoelectric conversion layer. The top electrode 202 and the bottom electrode 203 are used to transmit the induced charge generated by the amorphous silicon photodiode absorbing light and lead out the electrical signal. The thickness of the top electrode 202 is 10-200nm, and the thickness of the bottom electrode 203 is 10-200nm. The electrical signal is led out through the top electrode lead-out portion 2022 of the top electrode 202 and the bottom electrode lead-out portion 2032 of the bottom electrode 203. The connection method of the top electrode 202 and the bottom electrode 203 of each amorphous silicon photodiode of the present application is not fixed, and the bottom electrode 203 can be grounded and the top electrode 202 can be biased, or the top electrode 202 can be grounded and the bottom electrode 203 can be biased, or the top electrode 202 and the bottom electrode 203 can be not grounded, and a path can be formed, as long as the induced current generated by light can be derived. The top electrode 202 and the bottom electrode 203 are preferably made of transparent conductive materials, which can be selected but not limited to indium tin oxide, indium zinc oxide, etc., and thin metals can also be selected, which can be selected but not limited to aluminum, chromium, etc.

[0079] The top electrode 202 includes a top electrode body 2021 and a top electrode lead-out portion 2022, and the bottom electrode 203 includes a bottom electrode body 2031 and a bottom electrode lead-out portion 2032. The top electrode body 2021 and the bottom electrode body 2031 are used to transfer the induced charges generated by the light absorbed by the amorphous silicon photoelectric conversion layer. The top electrode lead-out portion 2022 is arranged at the edge of the top electrode 202, and the bottom electrode lead-out portion 2032 is arranged at the edge of the bottom electrode 203. The top electrode lead-out portion 2022 and the bottom electrode lead-out portion 2032 are outside the amorphous silicon photoelectric conversion layer and are in an exposed state for connection with other circuits to lead out electrical signals.

[0080] The top electrode 202 and the bottom electrode 203 can be formed by evaporation or sputtering.

[0081] The CVD deposition temperature of the amorphous silicon photoelectric conversion layer is 150 - 250 °C. Hydrogen can be introduced during the deposition process to play a passivation role and reduce the defects of amorphous silicon.

[0082] Optionally, as Figures 1 - 6 shown, an isolation layer 4 is provided between the substrate 1 and the amorphous silicon photoelectric conversion unit thereon for achieving electrical isolation and avoiding mutual interference between the substrate 1 and the amorphous silicon photodiode. Preferably, the material of the isolation layer 4 is silicon dioxide, which can ensure that visible light can also enter the amorphous silicon photoelectric conversion unit when it enters from below the substrate 1. The isolation layer 4 can be fabricated by a deposition method.

[0083] Optionally, as Figures 1 - 6 shown, a light-transmitting isolation layer 5 is provided between adjacent amorphous silicon photodiodes of the first amorphous silicon photoelectric conversion unit 2 and the second amorphous silicon photoelectric conversion unit 3 to avoid mutual interference between adjacent amorphous silicon photodiodes, so that each amorphous silicon photodiode can receive and process photoelectric signals independently. The material of the light-transmitting isolation layer 5 can be silicon dioxide.

[0084] Optionally, a passivation protection layer 6 is provided on the top layer of the photoelectric sensor for protecting the amorphous silicon photodiode. The passivation protection layer 6 does not cover the top electrode lead-out portion 2022 and the bottom electrode lead-out portion 2032. The material of the passivation protection layer 6 can be materials such as silicon dioxide or silicon nitride.

[0085] Figure 7 is Figure 1Schematic diagram of the spectral response of the photoelectric sensor of the illustrated embodiment to incident visible light. It can be seen that the first amorphous silicon photodiode 21 through which the incident light first passes has the highest absorption efficiency in the blue light band region, the second amorphous silicon photodiode 22 in the middle layer has the highest absorption efficiency in the green light band region, and the third amorphous silicon photodiode 31 in the lower layer has the highest absorption efficiency in the red light band region, which conforms to the absorption characteristics of light. Since the red light has the strongest penetrability and can reach the region of the third amorphous silicon photodiode 31 at the bottom layer, while the blue light has the weakest penetrability and is basically absorbed at the first amorphous silicon photodiode 21 at the top layer. By fitting the spectra of the three layers of amorphous silicon photodiodes, the actual spectral situation of the incident light can be restored, and then ambient light detection can be realized, which can be applied to the adjustment of brightness, color temperature, etc. of display devices such as mobile phones and tablets.

[0086] The photodiodes of the photoelectric sensor of the present application are stacked, which reduces the area of the photoelectric sensor, eliminates the need for color filters, increases the light absorption efficiency, and reduces the cost. Using amorphous silicon as the structural layer of the photodiode, compared with single crystal silicon, the light absorption coefficient in the visible light band is one order of magnitude higher, the spectral characteristics are closer to the human eye, the light absorption ability and sensitivity are higher, and the process is simple and the cost is low.

[0087] The embodiment of the present application also discloses a manufacturing method of the photoelectric sensor described in the above embodiment. The manufacturing method specifically includes:

[0088] Provide a substrate 1, fabricate a first amorphous silicon photoelectric conversion unit 2 on the substrate 1, and then fabricate a second amorphous silicon photoelectric conversion unit 3 on the first amorphous silicon photoelectric conversion unit 2; or, fabricate a second amorphous silicon photoelectric conversion unit 3 on the substrate 1, and then fabricate a first amorphous silicon photoelectric conversion unit 2 on the second amorphous silicon photoelectric conversion unit 3. At this time, visible light enters from below the substrate 1, and the substrate 1 is a light-transmitting substrate.

[0089] Specifically, the first amorphous silicon photoelectric conversion unit 2 includes one or two amorphous silicon photodiodes stacked up and down, the second amorphous silicon photoelectric conversion unit 3 includes one amorphous silicon photodiode, and all the amorphous silicon photodiodes are fabricated in sequence from bottom to top.

[0090] The amorphous silicon photodiode includes an amorphous silicon photoelectric conversion layer. The amorphous silicon photoelectric conversion layer includes a p-doped amorphous silicon layer, an intrinsic amorphous silicon layer, and an n-doped amorphous silicon layer arranged in sequence from top to bottom or from bottom to top. Each layer of the amorphous silicon photoelectric conversion layer is fabricated in sequence from bottom to top. The amorphous silicon photoelectric conversion layer is formed by CVD deposition.

[0091] The amorphous silicon photodiode further includes a top electrode 202 disposed on the top layer of the amorphous silicon photodiode and a bottom electrode 203 disposed on the bottom layer of the amorphous silicon photodiode. The manufacturing method specifically includes: manufacturing the bottom electrode 203 of the amorphous silicon photodiode before manufacturing the amorphous silicon photoelectric conversion layer of the amorphous silicon photodiode, then manufacturing the amorphous silicon photoelectric conversion layer on the bottom electrode 203, and then manufacturing the top electrode 202 of the amorphous silicon photodiode on the amorphous silicon photoelectric conversion layer.

[0092] The top electrode 202 includes a top electrode body 2021 and a top electrode lead-out portion 2022. The top electrode lead-out portion 2022 is disposed at the edge of the top electrode 202. The bottom electrode 203 includes a bottom electrode body 2031 and a bottom electrode lead-out portion 2032. The bottom electrode lead-out portion 2032 is disposed at the edge of the bottom electrode 203. The manufacturing method specifically includes:

[0093] After the first amorphous silicon photoelectric conversion unit 2 and the second amorphous silicon photoelectric conversion unit 3 are manufactured, the top electrode lead-out portion 2022 and the bottom electrode lead-out portion 2032 of each amorphous silicon photodiode are respectively exposed by etching, and a stepped structure is etched to expose each top electrode lead-out portion 2022 and bottom electrode lead-out portion 2032.

[0094] The top electrode 202 can be formed on the substrate by evaporation or sputtering, and then the patterned top electrode lead-out portion 2022 and the top electrode body 2021 are formed by photolithography and etching.

[0095] The bottom electrode 203 can be formed on the substrate by evaporation or sputtering, and then the patterned bottom electrode lead-out portion 2032 and the bottom electrode body 2031 are formed by photolithography and etching.

[0096] Optionally, an isolation layer 4 is disposed between the substrate 1 and the amorphous silicon photoelectric conversion unit thereon. The manufacturing method specifically includes: before manufacturing the first amorphous silicon photoelectric conversion unit 2 and the second amorphous silicon photoelectric conversion unit 3, first manufacturing the isolation layer 4 on the substrate 1, and then manufacturing the amorphous silicon photoelectric conversion unit on the upper surface of the isolation layer 4. The isolation layer 4 can be formed by deposition.

[0097] Optionally, a light-transmitting isolation layer 5 is provided between adjacent amorphous silicon photodiodes. The manufacturing method specifically includes: after manufacturing the lower amorphous silicon photodiode, manufacturing the light-transmitting isolation layer 5 on the upper surface of the amorphous silicon photodiode, and then manufacturing the upper-layer amorphous silicon photodiode on the upper surface of the light-transmitting isolation layer 5. The light-transmitting isolation layer 5 can be formed by deposition.

[0098] Optionally, a passivation protection layer 6 is provided on the top layer of the photoelectric sensor. The manufacturing method further includes: after the first amorphous silicon photoelectric conversion unit 2 and the second amorphous silicon photoelectric conversion unit 3 are manufactured, a passivation protection layer 6 is manufactured on the upper surface of the uppermost amorphous silicon photoelectric conversion unit. The passivation protection layer 6 is used to protect the amorphous silicon photodiode, but the passivation protection layer 6 does not cover the top electrode lead-out portion 2022 and the bottom electrode lead-out portion 2032, and the passivation protection layer 6 only covers the top electrode body 2021 of the amorphous silicon photodiode at the topmost layer. The passivation protection layer 6 can be formed by deposition.

[0099] The following uses Figure 1 the manufacturing process of the photoelectric sensor in the illustrated embodiment to illustrate the specific steps of the manufacturing method of the photoelectric sensor of the present application:

[0100] S1. As shown in Figure 8a the figure, an isolation layer 4 is deposited on the substrate 1.

[0101] S2. On the deposited isolation layer 4, the bottom electrode 203 of the third amorphous silicon photodiode 31 is evaporated or sputtered, and a patterned bottom electrode body 2031 and a bottom electrode lead-out portion 2032 are formed by photolithography and etching. The bottom electrode body 2031 is used to transfer the induced charge generated by the third amorphous silicon photodiode 31 absorbing light, and the bottom electrode lead-out portion 2032 is used to lead out the electrical signal, obtaining the Figure 8b structure shown in the figure.

[0102] S3. Then, a third amorphous silicon photoelectric conversion layer 311 is deposited on the bottom electrode 203 by CVD. The third amorphous silicon photoelectric conversion layer 311 covers the bottom electrode 203 and the exposed deposited isolation layer 4, obtaining the Figure 8c structure shown in the figure.

[0103] S4. On the third amorphous silicon photoelectric conversion layer 311, the top electrode 202 of the third amorphous silicon photodiode 31 is evaporated or sputtered, and a patterned top electrode body 2021 and a top electrode lead-out portion 2022 are formed by photolithography and etching. The top electrode 202 is used to transfer the induced charge generated by the third amorphous silicon photoelectric conversion layer 311 absorbing light, and the top electrode lead-out portion 2022 is used to lead out the electrical signal, obtaining the structure as shown in Figure 8d the figure.

[0104] S5. A light-transmitting isolation layer 5 is deposited on the upper surface of the top electrode 202 of the third amorphous silicon photodiode 31. The light-transmitting isolation layer 5 covers the top electrode 202 and the exposed third amorphous silicon photoelectric conversion layer 311. The light-transmitting isolation layer 5 is used to isolate the upper and lower amorphous silicon photodiodes to prevent mutual interference, obtaining the Figure 8e structure shown in the figure.

[0105] S6. The second amorphous silicon photodiode 22 and the transparent isolation layer 5 above the second amorphous silicon photodiode 22 are fabricated on the transparent isolation layer 5 above the third amorphous silicon photodiode 31 in the same manner as in steps S2 - S5, obtaining the structure as shown in Figure 8f Shown.

[0106] S7. The first amorphous silicon photodiode 21 is fabricated on the transparent isolation layer 5 above the second amorphous silicon photodiode 22 in the same manner as in steps S2 - S4. Then, a passivation protection layer 6 is deposited on the upper surface of the first amorphous silicon photoconversion layer 211 and the upper surface of the top electrode 202, obtaining the structure as shown in Figure 8g Shown.

[0107] S8. A step structure is formed through photolithography and etching to expose the bottom electrode lead-out portions 2032 and the top electrode lead-out portions 2022 of the first amorphous silicon photodiode 21, the second amorphous silicon photodiode 22, and the third amorphous silicon photodiode 31, and the electrical signals are led out, obtaining the structure as shown in Figure 8h Shown.

[0108] The manufacturing method of the photoelectric sensor of the present application is simple. The amorphous silicon photoconversion layer of the photodiode is deposited by CVD, and the deposition temperature is relatively low (about 200 °C), which is compatible with the CMOS process temperature. The device structure can be further processed on the substrate 1 on which the CMOS circuit or other devices have been fabricated, further reducing the area of the photoelectric sensor, improving the signal processing efficiency, and reducing the cost.

[0109] The optical sensor of the present application can be an ambient light sensor or a color temperature sensor.

[0110] The present application also discloses an electronic device, including the photoelectric sensor described in the above embodiment. The photoelectric sensor can be applied to ambient light detection to adjust the brightness and color temperature of the display device. The electronic device can be a laptop computer, a mobile phone, a tablet computer, a projector, a desktop computer, a gaming device, an in-vehicle electronic device, a wearable intelligent device, etc.

[0111] In the description of the present invention, it should be understood that the orientation or positional relationship indicated by the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc. is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of the present invention.

[0112] In the present invention, unless otherwise clearly defined and limited, terms such as "installation", "connection", "coupling", "fixing", etc. shall be understood in a broad sense. For example, it may be a fixed connection, a detachable connection, or an integral body; it may be a mechanical connection or an electrical connection; it may be directly connected or indirectly connected through an intermediate medium, and it may be the internal communication of two components or the interaction relationship between two components, unless otherwise clearly limited. For those of ordinary skill in the art, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0113] In the description of this specification, the description with reference to terms such as "this embodiment", "one embodiment", "some embodiments", "examples", "specific examples", or "some examples", etc. means that the specific features, structures, materials, or characteristics described in connection with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic expressions of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials, or characteristics described can be combined in a suitable manner in any at least one embodiment or example. In addition, without contradiction, those skilled in the art can combine and combine the different embodiments or examples described in this specification and the features of different embodiments or examples.

[0114] In addition, the terms "first" and "second" are only used for descriptive purposes and cannot be understood as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. Thus, the features defined with "first" and "second" may explicitly or implicitly include at least one of such features. In the description of the present invention, the meaning of "a plurality" is at least two, such as two, three, etc., unless otherwise clearly and specifically defined.

[0115] The above are only the preferred embodiments of the present invention and are not intended to limit the present invention. Any modifications, equivalent replacements, and simple improvements made to the substantial content of the present invention shall be included in the protection scope of the present invention.

Claims

1. A photoelectric sensor, characterized in that: It comprises a substrate (1), a first amorphous silicon photoelectric conversion unit (2) and a second amorphous silicon photoelectric conversion unit (3), The first amorphous silicon photoelectric conversion unit (2) and the second amorphous silicon photoelectric conversion unit (3) are stacked and arranged on the substrate (1); visible light passes through the first amorphous silicon photoelectric conversion unit (2) and the second amorphous silicon photoelectric conversion unit (3) in sequence; the first amorphous silicon photoelectric conversion unit (2) and the second amorphous silicon photoelectric conversion unit (3) are used to absorb blue light, green light and red light in sequence; the first amorphous silicon photoelectric conversion unit (2) is used to absorb blue light and green light, and the second amorphous silicon photoelectric conversion unit (3) is used to absorb red light; or the first amorphous silicon photoelectric conversion unit (2) is used to absorb blue light, and the second amorphous silicon photoelectric conversion unit (3) is used to absorb green light and red light. The first amorphous silicon photoelectric conversion unit (2) and the second amorphous silicon photoelectric conversion unit (3) are stacked on the substrate (1) from top to bottom. Alternatively, the first amorphous silicon photoelectric conversion unit (2) and the second amorphous silicon photoelectric conversion unit (3) are stacked on the substrate (1) from bottom to top, and at this time, visible light is incident from below the substrate (1), and the substrate (1) is a light-transmitting substrate.

2. The photoelectric sensor according to claim 1, characterized in that: The first amorphous silicon photoelectric conversion unit (2) comprises a first amorphous silicon photodiode (21) and a second amorphous silicon photodiode (22) which are sequentially arranged along the propagation direction of the visible light, the second amorphous silicon photoelectric conversion unit (3) comprises a third amorphous silicon photodiode (31), the first amorphous silicon photodiode (21) comprises a first amorphous silicon photoelectric conversion layer (211), the second amorphous silicon photodiode (22) comprises a second amorphous silicon photoelectric conversion layer (221), the third amorphous silicon photodiode (31) comprises a third amorphous silicon photoelectric conversion layer (311), and the thickness of the first amorphous silicon photoelectric conversion layer (211) is less than the thickness of the second amorphous silicon photoelectric conversion layer (221) and less than the thickness of the third amorphous silicon photoelectric conversion layer (311).

3. The photoelectric sensor according to claim 2, characterized in that: The first amorphous silicon photodiode (21) is used to absorb blue light, the second amorphous silicon photodiode (22) is used to absorb green light, and the third amorphous silicon photodiode (31) is used to absorb red light.

4. The photoelectric sensor according to claim 2, characterized in that: The thickness of the first amorphous silicon photoelectric conversion layer (211) is 10-100 nm, the thickness of the second amorphous silicon photoelectric conversion layer (221) is 50-200 nm, and the thickness of the third amorphous silicon photoelectric conversion layer (311) is 200-500 nm.

5. The photoelectric sensor according to claim 2, characterized in that: The first amorphous silicon photoelectric conversion layer (211) comprises a p-doped amorphous silicon layer, an intrinsic amorphous silicon layer and an n-doped amorphous silicon layer which are sequentially arranged from top to bottom or from bottom to top, the second amorphous silicon photoelectric conversion layer (221) comprises a p-doped amorphous silicon layer, an intrinsic amorphous silicon layer and an n-doped amorphous silicon layer which are sequentially arranged from top to bottom or from bottom to top, the third amorphous silicon photoelectric conversion layer (311) comprises a p-doped amorphous silicon layer, an intrinsic amorphous silicon layer and an n-doped amorphous silicon layer which are sequentially arranged from top to bottom or from bottom to top, the p-doped amorphous silicon layer of the first amorphous silicon photoelectric conversion layer (211) The thickness of the p-doped amorphous silicon layer is 5-30nm, the thickness of the intrinsic amorphous silicon layer is 10-50nm, and the thickness of the n-doped amorphous silicon layer is 5-30nm; the thickness of the p-doped amorphous silicon layer of the second amorphous silicon photoelectric conversion layer (221) is 5-30nm, the thickness of the intrinsic amorphous silicon layer is 50-200nm, and the thickness of the n-doped amorphous silicon layer is 5-30nm; the thickness of the p-doped amorphous silicon layer of the third amorphous silicon photoelectric conversion layer (311) is 5-30nm, the thickness of the intrinsic amorphous silicon layer is 200-500nm, and the thickness of the n-doped amorphous silicon layer is 5-30nm.

6. The photoelectric sensor according to claim 1, characterized in that: The first amorphous silicon photoelectric conversion unit (2) comprises a fourth amorphous silicon photodiode (23), the second amorphous silicon photoelectric conversion unit (3) comprises a fifth amorphous silicon photodiode (32), the fourth amorphous silicon photodiode (23) is used to absorb blue light and green light, and the fifth amorphous silicon photodiode (32) is used to absorb red light.

7. The photoelectric sensor according to claim 6, characterized in that: The fourth amorphous silicon photodiode (23) comprises a fourth amorphous silicon photoelectric conversion layer (231), and the fifth amorphous silicon photodiode (32) comprises a fifth amorphous silicon photoelectric conversion layer (321). The thickness of the fourth amorphous silicon photoelectric conversion layer (231) is 50-300 nm, and the thickness of the fifth amorphous silicon photoelectric conversion layer (321) is 200-500 nm.

8. The photoelectric sensor according to claim 6, characterized in that: The fourth amorphous silicon photodiode (23) comprises a fourth amorphous silicon photoelectric conversion layer (231), wherein the fourth amorphous silicon photoelectric conversion layer (231) comprises a p-doped amorphous silicon layer, an intrinsic amorphous silicon layer and an n-doped amorphous silicon layer arranged in sequence from top to bottom or from bottom to top, and the fifth amorphous silicon photodiode (32) comprises a fifth amorphous silicon photoelectric conversion layer (321), wherein the fifth amorphous silicon photoelectric conversion layer (321) comprises a p-doped amorphous silicon layer, an intrinsic amorphous silicon layer and an n-doped amorphous silicon layer arranged in sequence from top to bottom or from bottom to top. The fourth amorphous silicon photoelectric conversion layer (231) has a p-doped amorphous silicon layer with a thickness of 5-50 nm, an intrinsic amorphous silicon layer with a thickness of 50-250 nm, and an n-doped amorphous silicon layer with a thickness of 5-50 nm. The fifth amorphous silicon photoelectric conversion layer (321) has a p-doped amorphous silicon layer with a thickness of 5-30 nm, an intrinsic amorphous silicon layer with a thickness of 200-500 nm, and an n-doped amorphous silicon layer with a thickness of 5-30 nm.

9. The photoelectric sensor according to claim 1, characterized in that: The first amorphous silicon photoelectric conversion unit (2) comprises a sixth amorphous silicon photodiode (24), and the second amorphous silicon photoelectric conversion unit (3) comprises a seventh amorphous silicon photodiode (33). The sixth amorphous silicon photodiode (24) is used to absorb blue light, and the seventh amorphous silicon photodiode (33) is used to absorb green light and red light.

10. The photoelectric sensor according to claim 9, characterized in that: The sixth amorphous silicon photodiode (24) comprises a sixth amorphous silicon photoelectric conversion layer (241), and the seventh amorphous silicon photodiode (33) comprises a seventh amorphous silicon photoelectric conversion layer (331). The thickness of the sixth amorphous silicon photoelectric conversion layer (241) is 10-100 nm, and the thickness of the seventh amorphous silicon photoelectric conversion layer (331) is 200-1000 nm.

11. The photoelectric sensor according to claim 9, characterized in that: The sixth amorphous silicon photodiode (24) comprises a sixth amorphous silicon photoelectric conversion layer (241), the seventh amorphous silicon photodiode (33) comprises a seventh amorphous silicon photoelectric conversion layer (331), the sixth amorphous silicon photoelectric conversion layer (241) comprises a p-doped amorphous silicon layer, an intrinsic amorphous silicon layer and an n-doped amorphous silicon layer arranged in sequence from top to bottom or from bottom to top, and the seventh amorphous silicon photoelectric conversion layer (331) comprises a p-doped amorphous silicon layer, an intrinsic amorphous silicon layer and an n-doped amorphous silicon layer arranged in sequence from top to bottom or from bottom to top. The sixth amorphous silicon photoelectric conversion layer (241) has a p-doped amorphous silicon layer with a thickness of 5-30 nm, an intrinsic amorphous silicon layer with a thickness of 10-50 nm, and an n-doped amorphous silicon layer with a thickness of 5-30 nm. The seventh amorphous silicon photoelectric conversion layer (331) has a p-doped amorphous silicon layer with a thickness of 5-50 nm, an intrinsic amorphous silicon layer with a thickness of 200-800 nm, and an n-doped amorphous silicon layer with a thickness of 5-50 nm.

12. The photoelectric sensor according to any one of claims 2 to 11, characterized in that: The amorphous silicon photodiodes of the first amorphous silicon photoelectric conversion unit (2) and the second amorphous silicon photoelectric conversion unit (3) both comprise a top electrode (202) arranged on the top layer of the amorphous silicon photodiode and a bottom electrode (203) arranged on the bottom layer of the amorphous silicon photodiode. The top electrode (202) and the bottom electrode (203) are used to transmit induced charges generated by the amorphous silicon photodiode absorbing light and to lead out electrical signals. The thickness of the top electrode (202) is 10-200 nm, and the thickness of the bottom electrode (203) is 10-200 nm.

13. The photoelectric sensor according to claim 5, 8 or 11, characterized in that: The p-type doping concentration of the p-doped amorphous silicon layer is 1×10 18 to 1x10 22 atoms / cm3, and the n-type doping concentration of the n-doped amorphous silicon layer is 1x10 18 to 1x10 22 atoms / cubic centimeter.

14. The photoelectric sensor according to any one of claims 1 to 11, characterized in that: An isolation layer (4) is provided between the substrate (1) and the amorphous silicon photoelectric conversion unit thereon.

15. The photoelectric sensor according to any one of claims 2 to 11, characterized in that: A light-transmitting isolation layer (5) is provided between adjacent amorphous silicon photodiodes of the first amorphous silicon photoelectric conversion unit (2) and the second amorphous silicon photoelectric conversion unit (3).

16. The photoelectric sensor according to any one of claims 1 to 11, characterized in that: The top layer of the photoelectric sensor is provided with a passivation protection layer (6).

17. A method for manufacturing a photoelectric sensor according to any one of claims 1 to 16, characterized in that: The production method specifically comprises: providing a substrate (1), A first amorphous silicon photoelectric conversion unit (2) is manufactured on the substrate (1), and then a second amorphous silicon photoelectric conversion unit (3) is manufactured on the first amorphous silicon photoelectric conversion unit (2); or, A second amorphous silicon photoelectric conversion unit (3) is manufactured on the substrate (1), and then a first amorphous silicon photoelectric conversion unit (2) is manufactured on the second amorphous silicon photoelectric conversion unit (3).

18. The method for manufacturing a photoelectric sensor according to claim 17, characterized in that: The first amorphous silicon photoelectric conversion unit (2) comprises one or two amorphous silicon photodiodes stacked up and down, the second amorphous silicon photoelectric conversion unit (3) comprises an amorphous silicon photodiode, and all the amorphous silicon photodiodes are manufactured in sequence from bottom to top.

19. The method for manufacturing a photoelectric sensor according to claim 18, characterized in that: The amorphous silicon photodiode includes an amorphous silicon photoelectric conversion layer, which includes a p-doped amorphous silicon layer, an intrinsic amorphous silicon layer and an n-doped amorphous silicon layer arranged sequentially from top to bottom or from bottom to top, and the layers of the amorphous silicon photoelectric conversion layer are manufactured sequentially from bottom to top.

20. The method for manufacturing a photoelectric sensor according to claim 19, characterized in that: The amorphous silicon photodiode further comprises a top electrode (202) arranged on the top layer of the amorphous silicon photodiode and a bottom electrode (203) arranged on the bottom layer of the amorphous silicon photodiode. The manufacturing method specifically comprises: The bottom electrode (203) of the amorphous silicon photodiode is manufactured before the amorphous silicon photoelectric conversion layer of the amorphous silicon photodiode is manufactured, and then the amorphous silicon photoelectric conversion layer is manufactured on the bottom electrode (203), and then the top electrode (202) is manufactured on the amorphous silicon photoelectric conversion layer.

21. The method for manufacturing a photoelectric sensor according to claim 20, characterized in that: The top electrode (202) comprises a top electrode body (2021) and a top electrode lead-out portion (2022), wherein the top electrode lead-out portion (2022) is arranged at the edge of the top electrode (202), the bottom electrode (203) comprises a bottom electrode body (2031) and a bottom electrode lead-out portion (2032), wherein the bottom electrode lead-out portion (2032) is arranged at the edge of the bottom electrode (203), and the manufacturing method specifically comprises: After the first amorphous silicon photoelectric conversion unit (2) and the second amorphous silicon photoelectric conversion unit (3) are manufactured, the top electrode lead-out portion (2022) and the bottom electrode lead-out portion (2032) of each amorphous silicon photodiode are respectively exposed by etching.

22. The method for manufacturing a photoelectric sensor according to claim 17, characterized in that: An isolation layer (4) is provided between the substrate (1) and the amorphous silicon photoelectric conversion unit thereon, and the manufacturing method further comprises: Before manufacturing the first amorphous silicon photoelectric conversion unit (2) and the second amorphous silicon photoelectric conversion unit (3), the isolation layer (4) is first manufactured on the substrate (1), and then the amorphous silicon photoelectric conversion unit on the upper surface of the isolation layer (4) is manufactured.

23. The method for manufacturing a photoelectric sensor according to claim 18, characterized in that: A light-transmitting isolation layer (5) is provided between adjacent amorphous silicon photodiodes, and the manufacturing method specifically comprises: After the lower layer of the amorphous silicon photodiode is manufactured, the light-transmitting isolation layer (5) is manufactured on the upper surface of the amorphous silicon photodiode, and then the upper layer of the amorphous silicon photodiode is manufactured on the upper surface of the light-transmitting isolation layer (5).

24. The method for manufacturing a photoelectric sensor according to claim 17, characterized in that: The top layer of the photoelectric sensor is provided with a passivation protection layer (6), and the manufacturing method further comprises: After the first amorphous silicon photoelectric conversion unit (2) and the second amorphous silicon photoelectric conversion unit (3) are manufactured, the passivation protection layer (6) is manufactured on the upper surface of the amorphous silicon photoelectric conversion unit located at the top.

25. An electronic device, characterized in that: The photoelectric sensor comprises the photoelectric sensor according to any one of claims 1 to 16.

Images