LED display device and manufacturing method thereof

Abstract

The invention discloses LED display equipment and a manufacturing method thereof. The equipment comprises a first light-emitting layer series and a second light-emitting layer series, the first light-emitting layer comprises a plurality of first light-emitting units, a first metal reflecting layer, a plurality of first pixel electrodes and a plurality of first metal reflecting patterns, the first pixel electrodes and the first metal reflecting patterns are arranged on one side and the other side of the first light-emitting units respectively, and the first metal reflecting layer surrounds each first light-emitting unit; a first light emitting area is formed between the first metal reflection pattern and the first metal reflection layer; the second light-emitting layer comprises a plurality of second light-emitting units, a second metal reflecting layer and a plurality of second pixel electrodes, the second pixel electrodes are arranged on one sides of the second light-emitting units, the second metal reflecting layer surrounds each second light-emitting unit, and the projection of the second light-emitting units falls into the projection of the first metal reflecting pattern. The display contrast of light rays with different colors in the LED display equipment can be improved, and the optical efficiency can be improved.

Description

Technical Field

[0001] This application relates to the technical field of semiconductor light-emitting diodes, and particularly to an LED display device and a manufacturing method thereof. Background Art

[0002] LED, short for Light Emitting Diode, is a semiconductor component that can convert electrical energy into visible light. It is a lighting source widely used in modern times in fields such as indication, display, decoration, backlight, general lighting, and urban night scene. An LED display device usually has multiple pixel points. In order to achieve colorization of the LED display device, on the basis of etching to form pixel points, it is necessary to stack LED pixel points of multiple colors. However, when the current color LED display device emits light, due to the stacking of LED pixel points of different colors, after the light exits the LED display device, the light color crosstalk is serious, and the light absorption by the materials on the light-emitting path is serious, resulting in poor optical efficiency of the LED display device and also reducing the display contrast. Summary of the Invention

[0003] Embodiments of this application provide an LED display device and a manufacturing method thereof, which can improve the display contrast of different light colors in the LED display device and improve the optical efficiency of the LED display device.

[0004] In a first aspect, a technical solution adopted by this application is to provide an LED display device, which includes:

[0005] The LED display device includes a driving substrate and a display substrate stacked along a predetermined stacking direction. The display substrate includes a first light-emitting layer system and a second light-emitting layer system stacked on the driving substrate in sequence along the stacking direction;

[0006] The first light-emitting layer system includes a plurality of first light-emitting units, a first metal reflection layer, a first transparent dielectric layer, a plurality of first pixel electrodes, and a plurality of first metal reflection patterns. The plurality of first light-emitting units are arranged at intervals in an array. The plurality of first pixel electrodes and the plurality of first metal reflection patterns are respectively disposed on one side of the plurality of first light-emitting units facing the driving substrate and on the other side facing away from the driving substrate. The first metal reflection layer is disposed in the interval area between the plurality of first light-emitting units and surrounds each first light-emitting unit. The first transparent dielectric layer is disposed between the first light-emitting unit and the first metal reflection layer. A first light-emitting area is formed between each first metal reflection pattern and the first metal reflection layer;

[0007] The second light-emitting layer system includes a plurality of second light-emitting units, a second metal reflection layer, a second transparent dielectric layer, and a plurality of second pixel electrodes. The plurality of second light-emitting units are arranged at intervals in an array. The plurality of second pixel electrodes are correspondingly arranged on one side of the plurality of second light-emitting units facing the driving substrate. The second metal reflection layer is arranged in the interval area between the plurality of second light-emitting units and is arranged around each second light-emitting unit. The second transparent dielectric layer is arranged between the second light-emitting unit and the second metal reflection layer. The projections of the plurality of second light-emitting units along the stacking direction respectively at least partially overlap with the projections of the corresponding first metal reflection patterns along the stacking direction within the projections along the stacking direction.

[0008] In a second aspect, a technical solution adopted in the present application is to provide a method for manufacturing an LED display device. The method for manufacturing the LED display device includes:

[0009] Providing a first light-emitting layer system, where the first light-emitting layer system includes a plurality of first light-emitting units, a first metal reflection layer, a first transparent dielectric layer, a plurality of first pixel electrodes, and a plurality of first metal reflection patterns. The plurality of first light-emitting units are arranged at intervals in an array. The plurality of first pixel electrodes and the plurality of first metal reflection patterns are respectively correspondingly arranged on both sides of the plurality of first light-emitting units facing the driving substrate in the stacking direction. The first metal reflection layer is arranged in the interval area between the plurality of first light-emitting units and is arranged around each first light-emitting unit. The first transparent dielectric layer is arranged between the first light-emitting unit and the first metal reflection layer, and a first light-emitting area is formed between each first metal reflection pattern and the first metal reflection layer;

[0010] Providing a second light-emitting layer system, where the second light-emitting layer system includes a plurality of second light-emitting units, a second metal reflection layer, a second transparent dielectric layer, and a plurality of second pixel electrodes. The plurality of second light-emitting units are arranged at intervals in an array. The plurality of second pixel electrodes are correspondingly arranged on one side of the plurality of second light-emitting units. The second metal reflection layer is arranged in the interval area between the plurality of second light-emitting units and is arranged around each second light-emitting unit. The second transparent dielectric layer is arranged between the second light-emitting unit and the second metal reflection layer;

[0011] Stacking the first light-emitting layer system and the second light-emitting layer system on the driving substrate in sequence so that the projections of the plurality of second light-emitting units along the stacking direction respectively fall within the projections of the corresponding first metal reflection patterns along the stacking direction.

[0012] The beneficial effects of the present application are as follows: Different from the prior art, the LED display device of the present application is provided with a first light-emitting layer system and a second light-emitting layer system stacked in sequence along the stacking direction. Among them, a plurality of first pixel electrodes and a plurality of first metal reflection patterns of the first light-emitting layer system are respectively arranged on both sides of a plurality of first light-emitting units. The first transparent dielectric layer and the first metal reflection layer in the first light-emitting layer system sequentially surround each first light-emitting unit. Since the first metal reflection pattern and the first metal reflection layer have a reflection effect, the light of the plurality of first light-emitting units will be emitted from the first transparent dielectric layer. Moreover, the projections of the plurality of second light-emitting units of the second light-emitting layer system along the stacking direction respectively fall within the projections of the corresponding first metal reflection patterns along the stacking direction. Therefore, when the light of the first light-emitting unit is emitted towards the second light-emitting unit along the stacking direction, most of the light will be reflected back to the first light-emitting unit by the first metal reflection pattern, so that most of the light of the first light-emitting unit is concentrated and emitted from the first transparent dielectric layer, and will not pass through the second light-emitting unit to cause color crosstalk of the light. Most of the light generated by the second light-emitting unit will also be reflected by the first metal reflection pattern and will not pass through the first light-emitting unit, which can make the light generated by the first light-emitting unit and the second light-emitting unit not easily have color crosstalk, thereby improving the display contrast of different light colors in the LED display device and reducing the light loss. Moreover, the second transparent dielectric layer and the second metal reflection layer of the second light-emitting layer system also sequentially surround each second light-emitting unit, and the second metal reflection layer can also reflect the light of the second light-emitting unit. Therefore, the light extraction collimation and optical efficiency of the LED display device can be improved. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] Figure 1 is a schematic structural diagram of an embodiment of the LED display device from a lateral viewing angle on one side;

[0014] Figure 2 is Figure 1 a schematic structural diagram of the first metal reflection layer and the first metal reflection pattern in the embodiment of the LED display device shown in the viewing angle along the stacking direction;

[0015] Figure 3 is Figure 1 a schematic structural diagram of the embodiment of the LED display device from a lateral viewing angle on the other side;

[0016] Figure 4 is Figure 1 a schematic structural diagram of the embodiment of the LED display device from a lateral viewing angle on yet another side;

[0017] Figure 5 is Figure 1Schematic diagram of the second pixel electrode in the LED display device embodiment shown and the structure when the second pixel electrode is projected onto the first metal reflection layer along the stacking direction;

[0018] Figure 6 It is a schematic flow chart of an embodiment of the manufacturing method of the LED display device of the present application;

[0019] Figure 7 It is another schematic flow chart of an embodiment of the manufacturing method of the LED display device of the present application;

[0020] Figure 8 is Figure 7 A schematic preparation process diagram corresponding to the manufacturing method of the Micro-LED display device embodiment shown;

[0021] Figure 9 is Figure 7 Another schematic preparation process diagram corresponding to the manufacturing method of the Micro-LED display device embodiment shown;

[0022] Figure 10 is Figure 6 A schematic preparation process diagram corresponding to the manufacturing method of the Micro-LED display device embodiment shown;

[0023] Figure 11 is Figure 6 Another schematic preparation process diagram corresponding to the manufacturing method of the Micro-LED display device embodiment shown;

[0024] Figure 12 is Figure 6 Another schematic preparation process diagram corresponding to the manufacturing method of the Micro-LED display device embodiment shown. Detailed implementation manners

[0025] Next, the technical solutions in the embodiments of the present application will be clearly and completely described in conjunction with the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present application.

[0026] The following is an exemplary description of the LED display device in the embodiments of the present application for the LED display device.

[0027] The LED display device 1 is a device capable of generating light. Multiple pixel points can be formed inside the LED display device 1 to generate light, and the generated light can be emitted from one side of the LED display device 1 for lighting or displaying various information such as text, images, and videos. For example, the LED display device 1 can be a device such as an AR glasses chip, a projection display chip, an LED digital vehicle headlight chip, a digital light strip chip, or an LED display screen chip.

[0028] In some embodiments, as Figure 1 shown, the LED display device 1 includes a driving substrate 20 and a display substrate 10 stacked along a predetermined stacking direction. As an example, the stacking direction can be as shown by the arrow A in the figure. The driving substrate 20 may have corresponding circuit structures inside, and the driving substrate 20 is used to provide a driving voltage for the display substrate 10. The display substrate 10 is used to generate light under the action of the electric energy transmitted by the driving substrate 20, so as to realize the display function of the LED display device 1.

[0029] As Figure 1 shown, the display substrate 10 may include a first light-emitting layer system 110 and a second light-emitting layer system 120 stacked in sequence along the stacking direction on the driving substrate 20. As an example, the stacking direction can be as shown by the arrow A in Figure 1 the figure.

[0030] Among them, the first light-emitting layer system 110 and the second light-emitting layer system 120 are different light-emitting components. The first light-emitting layer system 110 can generate light alone under the action of the driving voltage of the driving substrate 20, and the second light-emitting layer system 120 can also generate light alone under the action of the driving voltage of the driving substrate 20.

[0031] In some embodiments, the colors of the light generated by the first light-emitting layer system 110 and the second light-emitting layer system 120 may be different. For example, the first light-emitting layer system 110 can generate blue light, and the first light-emitting layer system 110 can generate green light.

[0032] In some embodiments, as Figure 1 shown, the first light-emitting layer system 110 may include a plurality of first light-emitting units 111, a first metal reflection layer 112, a first transparent dielectric layer 113, a plurality of first pixel electrodes 114, and a plurality of first metal reflection patterns 115.

[0033] Among them, the plurality of first light-emitting units 111 may be arranged at intervals in an array. The plurality of first light-emitting units 111 can be the pixel points described above. The interval direction of the plurality of first light-emitting units 111 can be perpendicular to the stacking direction A. As an example, the interval direction can be as shown by the arrow B in Figure 1 the figure.

[0034] In some embodiments, the first light-emitting unit 111 may include a P-type semiconductor layer, an active layer, and an N-type semiconductor layer, the active layer is a plurality of quantum well layers, the P-type semiconductor layer and the N-type semiconductor layer are respectively arranged on both sides of the active layer, and the P-type semiconductor layer, the active layer, and the N-type semiconductor layer may form a NiP structure together, so that under the action of a driving voltage, electrons and holes may be recombined to emit light, so as to form a light-emitting unit capable of emitting light. As an example, the first light-emitting unit 111 may be formed by doping semiconductor materials such as AlN, AlGaN, GaN, InGaN, AlInGaN, GaAs, GaP, GaInN, GaAsP, AlGaAs, or AlGaInP.

[0035] In some embodiments, Figure 1 As shown, the plurality of first pixel electrodes 114 and the plurality of first metal reflective patterns 115 may be respectively disposed on one side of the plurality of first light emitting units 111 facing the driving substrate 20 and the other side away from the driving substrate 20 .

[0036] Specifically, the multiple first pixel electrodes 114 can serve as P electrodes to make ohmic contact with the P-type semiconductor layer in the corresponding first light-emitting unit 111, and the multiple first pixel electrodes 114 can also be electrically connected to the driving substrate 20, so that the driving substrate 20 can provide a driving voltage to the multiple first light-emitting units 111 via the multiple first pixel electrodes 114.

[0037] As an example, the first pixel electrode 114 can be made of metal copper, aluminum, silver, titanium, tungsten, nickel, gold, indium tin oxide (ITO) or other conductive materials.

[0038] The plurality of first metal reflective patterns 115 can serve as N electrodes to make ohmic contact with the N-type semiconductor layer in the corresponding first light-emitting unit 111, so that the corresponding first metal reflective pattern 115, the first light-emitting unit 111 and the first pixel electrode 114 form a current path, so that the first light-emitting unit 111 can easily emit light. The first metal reflective pattern 115 also has a reflective function, so as to be able to reflect light on the other side of the plurality of first light-emitting units 111 away from the driving substrate 20.

[0039] As an example, the first metal reflective pattern 115 may be made of a material having high reflectivity and conductivity, such as metal silver or aluminum.

[0040] In some embodiments, Figure 2As shown, the first metal reflection layer 112 can be arranged in a grid pattern. A plurality of first metal reflection patterns 115 can be electrically connected to the first metal reflection layer 112 respectively and are used to provide a common voltage to the plurality of first light-emitting units 111. Specifically, each first metal reflection pattern 115 can be directly electrically connected to the first metal reflection layer 112 through an electrode or a wire. The first metal reflection layer 112 and the first metal reflection patterns 115 can jointly serve as the N electrode of the first light-emitting units 111 to provide a common voltage to the plurality of first light-emitting units 111.

[0041] In other embodiments, the first metal reflection layer 112 can also be directly electrically connected to the N-type semiconductor layer of the first light-emitting unit 111 through an electrode or a wire, rather than connecting the N-type semiconductor layer of the first light-emitting unit 111 through the first metal reflection layer 112.

[0042] Combined Figure 1 and Figure 2 , the first metal reflection layer 112 can be arranged in the spacer region between the plurality of first light-emitting units 111 and is arranged to surround each first light-emitting unit 111. The first transparent dielectric layer 113 can be arranged between the first light-emitting unit 111 and the first metal reflection layer 112 to form a first light-emitting region 116 between each first metal reflection pattern 115 and the first metal reflection layer 112.

[0043] Among them, in the spacing direction B of the first light-emitting unit 111, the first transparent dielectric layer 113 surrounds and contacts each first light-emitting unit 111 to wrap each first light-emitting unit 111 in the spacing direction B of the first light-emitting unit 111. In the spacing direction B of the first light-emitting unit 111, the first metal reflection layer 112 is wrapped around the periphery of the first transparent dielectric layer 113 to wrap each first light-emitting unit 111.

[0044] Among them, the first metal reflection layer 112 can reflect light. The light in the first light-emitting unit 111 can be reflected by the first metal reflection layer 112 after passing through the first transparent dielectric layer 113, so that the situation that the light of the first light-emitting unit 111 propagates along the spacing direction B to other first light-emitting units 111 can be reduced, and thus the light crosstalk and optical efficiency loss between the plurality of first light-emitting units 111 can be reduced. Moreover, under the action of the first metal reflection layer 112 and the first metal reflection patterns 115, the first light-emitting region 116 of the first light-emitting layer system 110 can be limited in each first light-emitting unit 111, and the light of each first light-emitting region 116 is emitted through the first transparent dielectric layer 113.

[0045] In some embodiments, such as Figure 1As shown, the second light-emitting layer system 120 may include a plurality of second light-emitting units 121, a second metal reflection layer 122, a second transparent dielectric layer 123, and a plurality of second pixel electrodes 124.

[0046] Among them, the plurality of second light-emitting units 121 are arranged at intervals in an array. The plurality of first light-emitting units 111 may serve as pixel points in the second light-emitting layer system 120. The interval direction B of the plurality of second light-emitting units 121 may be perpendicular to the stacking direction A.

[0047] Similarly, the second light-emitting unit 121 may also include a P-type semiconductor layer, an active layer, and an N-type semiconductor layer to jointly form an N-i-P structure, so that under the action of the driving voltage of the driving substrate 20, electrons and holes can be recombined to emit light, thereby forming pixel points capable of emitting light. The second light-emitting unit 121 may also be formed by doping with semiconductor materials such as AlN, AlGaN, GaN, InGaN, AlInGaN, GaAs, GaP, GaInN, GaAsP, AlGaAs, or AlGaInP.

[0048] The plurality of second pixel electrodes 124 are correspondingly arranged on the side of the plurality of second light-emitting units 121 facing the driving substrate 20. Among them, the plurality of second pixel electrodes 124 may also be electrically connected to the driving substrate 20, and the plurality of second pixel electrodes 124 are respectively in ohmic contact with the P-type semiconductor layer in the corresponding second light-emitting unit 121. The driving substrate 20 provides a driving voltage to the second light-emitting unit 121 through the plurality of second pixel electrodes 124. As an example, the second pixel electrode 124 may be made of metal copper, aluminum, silver, titanium, tungsten, nickel, gold, indium tin oxide (ITO), or other conductive materials.

[0049] As Figure 1 shown, the second metal reflection layer 122 may be disposed in the interval area between the plurality of second light-emitting units 121 and disposed around each second light-emitting unit 121. The second transparent dielectric layer 123 is disposed between the second light-emitting unit 121 and the second metal reflection layer 122. Specifically, along the interval direction B of the plurality of second light-emitting units 121, the second transparent dielectric layer 123 may wrap around each second light-emitting unit 121, and the second metal reflection layer 122 may be disposed on the side of the second transparent dielectric layer 123 facing away from the second light-emitting unit 121. The second metal reflection layer 122 may wrap around each second light-emitting unit 121 through the second transparent dielectric layer 123.

[0050] Among them, the second metal reflection layer 122 can have the function of reflecting light, so as to be able to reflect the light transmitted through the second transparent medium layer 123, thereby reducing the light from propagating along the interval direction B to other second light-emitting units 121, and reducing the light crosstalk between the plurality of second light-emitting units 121. Moreover, the second metal reflection layer 122 can be connected to the N-type semiconductor in the second light-emitting unit 121, so as to provide a driving voltage to the N-type semiconductor, so that the second light-emitting unit 121 can emit light normally. The second metal reflection layer 122 can be made of materials with high reflectivity and conductivity such as silver or aluminum.

[0051] As Figure 1 shown, the projections of the plurality of second light-emitting units 121 along the stacking direction A can respectively fall within the projection of the corresponding first metal reflection pattern 115 along the stacking direction A. In other words, along the stacking direction A, the projections of the plurality of second light-emitting units 121 can overlap with the projection of the first metal reflection pattern 115.

[0052] With such an arrangement, when the light of the first light-emitting unit 111 propagates in the direction of the second light-emitting unit 121 along the stacking direction A, most of the light will be reflected back into the first light-emitting unit 111 by the first metal reflection pattern 115, so that most of the light of the first light-emitting unit 111 is concentrated and emitted from the first transparent medium layer 113, and will not cause color crosstalk by passing through the second light-emitting unit 121. Most of the light generated by the second light-emitting unit 121 will also be reflected by the first metal reflection pattern 115 and will not pass through the first light-emitting unit 111, so that the light generated by the first light-emitting unit 111 and the second light-emitting unit 121 is not likely to cause color crosstalk, thereby improving the display contrast of different light colors in the LED display device 1 and reducing the light loss.

[0053] Moreover, the second transparent medium layer 123 and the second metal reflection layer 122 of the second light-emitting layer system 120 also successively surround each second light-emitting unit 121, and the light generated by the second light-emitting unit 121 is emitted to the side facing away from the driving substrate 20 under the action of the first metal reflection pattern 115 and the second metal reflection layer 122, so the light extraction collimation and optical efficiency of the LED display device 1 can be improved.

[0054] In some embodiments, as Figure 1 shown, the first transparent medium layer 113 can further cover the sides of the plurality of first light-emitting units 111 and the plurality of first pixel electrodes 114 facing the driving substrate 20. The first metal reflection layer 112 can be provided with a plurality of first window areas 1121 corresponding to the plurality of first pixel electrodes 114 respectively, and the projection of the first pixel electrode 114 along the stacking direction A falls within the corresponding first window area 1121.

[0055] Specifically, the first transparent dielectric layer 113 electrically isolates the first metal reflective layer 112 and the plurality of first pixel electrodes 114. Such an arrangement can reduce the possibility of electrical connection between the first metal reflective layer 112 and the plurality of first pixel electrodes 114 during the preparation process of the formation of the first metal reflective layer 112, thereby reducing the risk of short - circuit leakage in the LED display device 1.

[0056] In some embodiments, as Figure 1 shown, the first light - emitting layer system 110 may further include a first dielectric reflective layer 117. The first dielectric reflective layer 117 can cover the first metal reflective layer 112 and the exposed first transparent dielectric layer 113 through the first window region 1121 from the side facing the driving substrate 20. Among them, the first dielectric reflective layer 117 can also have high reflectivity and can reflect the light in the first light - emitting layer system 110 and the second light - emitting layer system 120. Such an arrangement can enable the first metal reflective layer 112 to reflect the light in the first light - emitting layer system 110 and the second light - emitting layer system 120 to the side facing away from the driving substrate 20 and emit it, thereby improving the light - extraction efficiency of the LED display device 1 and also making the light extraction of the LED display device 1 more collimated.

[0057] Exemplarily, the first dielectric reflective layer 117 can be prepared from materials such as DBR mirrors that have the ability to reflect light and are insulating.

[0058] In some embodiments, the reflectivity of the first metal reflective pattern 115 is not less than that of the first dielectric reflective layer 117. This can prevent a resonant cavity from being formed between the first dielectric reflective layer 117 and the first metal reflective pattern 115, so that when the light of the first light - emitting unit 111 is reflected by the first dielectric reflective layer 117 to the first metal reflective pattern 115, it can be reflected back to the first light - emitting unit 111 by the first metal reflective pattern 115, thereby reducing the phenomenon of light directly passing through the first metal reflective pattern 115 and directly resonating out, reducing the light of the first light - emitting unit 111 passing through the second light - emitting unit 121, and improving the display contrast of the LED display device 1.

[0059] In some embodiments, as Figure 1As shown, the first light-emitting layer system 110 may further include a first dielectric bonding layer 118 that covers the first dielectric reflective layer 117 from the side facing the driving substrate 20. The display substrate 10 may further include a plurality of first metal transfer electrodes 130 that penetrate through the first dielectric bonding layer 118 and the first dielectric reflective layer 117 and are respectively electrically connected to the plurality of first pixel electrodes 114. The first dielectric bonding layer 118 and the plurality of first metal transfer electrodes 130 are bonded to the driving substrate 20 in a hybrid bonding manner, and the plurality of first metal transfer electrodes 130 are further electrically connected to the driving substrate 20 to respectively provide driving voltages to the plurality of first pixel electrodes 114.

[0060] Among them, the first dielectric bonding layer 118 can serve as a masking film and a protective layer to prevent impurities from diffusing and contacting the inside of the LED display device 1. The plurality of first metal transfer electrodes 130 respectively lead the plurality of first pixel electrodes 114 out electrically from the side of the first dielectric reflective layer 117 facing the driving substrate 20 through the first window regions 1121, so as to facilitate the electrical connection between the plurality of first pixel electrodes 114 and the driving substrate 20. Moreover, by using the hybrid bonding method to fix the display substrate 10 on the driving substrate 20, the connection between the display substrate 10 and the driving substrate 20 can be made more stable, thereby improving the stability of the LED display device 1.

[0061] Exemplarily, the first dielectric bonding layer 118 can be an oxide layer made of silicon dioxide, silicon nitride or other insulating materials. The first metal transfer electrode 130 can be made of metal copper, aluminum, silver, titanium, tungsten, nickel, gold, indium tin oxide (ITO) or other conductive materials.

[0062] In some embodiments, as Figure 1 shown, on the adjacent sides of the first light-emitting layer system 110 and the second light-emitting layer system 120, there may further be a second dielectric bonding layer 119 and a third dielectric bonding layer 125 respectively. The second dielectric bonding layer 119 and the third dielectric bonding layer 125 are bonded to each other to fix the second light-emitting layer system 120 on the first light-emitting layer system 110.

[0063] Specifically, the second dielectric bonding layer 119 is located on the side of the first metal reflective pattern 115 away from the driving substrate 20 and covers the first metal reflective pattern 115 and the first metal reflective layer 112, and the third dielectric bonding layer 125 is located on the side of the plurality of second pixel electrodes 124 and the second metal reflective layer 122 facing the first light-emitting layer system 110, and the second dielectric bonding layer 119 and the third dielectric bonding layer 125 are bonded and connected to each other.

[0064] Exemplarily, the second dielectric bonding layer 119 and the third dielectric bonding layer 125 can be oxide layers made of insulating and transparent materials such as silicon dioxide or silicon nitride.

[0065] With such a setting, not only can the first light-emitting layer system 110 and the second light-emitting layer system 120 be fixedly connected conveniently, but also the connection between the first light-emitting layer system 110 and the second light-emitting layer system 120 becomes more firm. Moreover, the insulating and transparent design of the second dielectric bonding layer 119 and the third dielectric bonding layer 125 can also reduce the occurrence of short circuits or leakage between the first light-emitting layer system 110 and the second light-emitting layer system 120, and can also reduce the loss of light.

[0066] In some embodiments, as Figure 3 shown, the display substrate 10 may further include a plurality of second metal transfer electrodes 140 penetrating through the first light-emitting layer system 110. The plurality of second pixel electrodes 124 can be electrically connected to the driving substrate 20 through the plurality of second metal transfer electrodes 140 respectively to provide driving voltages to the plurality of second pixel electrodes 124 respectively.

[0067] Among them, the plurality of second pixel electrodes 124 and the corresponding second metal transfer electrodes 140 and the second pixel electrodes 124 can jointly serve as the P electrodes of the second light-emitting unit 121, so as to provide a driving voltage for the P-type semiconductor in the second light-emitting unit 121.

[0068] In some embodiments, along the stacking direction A, the position of the second metal transfer electrode 140 can be staggered from the position of the first light-emitting unit 111, so that the second metal transfer electrode 140 does not affect the light emission of the second metal transfer electrode 140.

[0069] In some embodiments, a part of the second pixel electrode 124 can extend along the interval direction B of the first light-emitting unit 111 into the interval area of its adjacent first light-emitting unit 111.

[0070] Specifically, a part of the second pixel electrode 124 can extend along the interval direction B to the position of the corresponding second metal transfer electrode 140. And the second metal reflective layer 122 may have a recessed notch to accommodate the extended second pixel electrode 124, and a part of the space in the notch can be filled with an insulating medium to keep the second pixel electrode 124 and the second metal reflective layer 122 electrically isolated.

[0071] The second metal transfer electrode 140 corresponds to the position of the first metal reflective layer 112 to penetrate through the third dielectric bonding layer 125 and the first light-emitting layer system 110, and is electrically connected to the corresponding electrode on the driving substrate 20. Moreover, the second metal transfer electrode 140 is kept electrically isolated from the first light-emitting layer system 110.

[0072] Since the light of the first light-emitting layer system 110 is emitted through the first transparent dielectric layer 113, the second metal transfer electrode 140 is arranged to be offset from the position of the first light-emitting unit 111 and the first transparent dielectric layer 113, so as to reduce the influence of the second metal transfer electrode 140 on the light emission of the first light-emitting layer system 110, thereby improving the light-emitting efficiency of the first light-emitting layer system 110.

[0073] In some embodiments, as Figure 3 shown, the first metal reflection layer 112 may further be provided with a plurality of first notches 1122, and a plurality of second metal transfer electrodes 140 are respectively disposed in the plurality of first notches 1122. The plurality of second metal transfer electrodes 140 pass through the plurality of first notches 1122 and are thus electrically connected to the driving substrate 20.

[0074] In some embodiments, as Figure 1 and Figure 3 shown, the second light-emitting layer system 120 may further include a plurality of second metal reflection patterns 127, and the plurality of second metal reflection patterns 127 respectively cover the side of the plurality of light-emitting units facing away from the driving substrate 20, and a second light-emitting region 128 is formed between each second metal reflection pattern 127 and the second metal reflection layer 122.

[0075] Among them, the second metal reflection pattern 127 also has the function of reflecting light. Under the reflection of the second metal reflection layer 122 and the second metal reflection pattern 127, the light generated by the second light-emitting unit 121 located in the second light-emitting region 128 can be emitted from the second light-emitting layer system 120 through the second transparent dielectric layer 123. Such an arrangement can make the light of the second light-emitting unit 121 more concentrated and also improve the light-emitting efficiency of the LED display device 1.

[0076] As an example, the second metal reflection pattern 127 can be made of materials such as metal Ag, Al, etc. that have conductivity and can reflect light.

[0077] In some embodiments, the second metal reflection layer 122 is arranged in a grid shape, and the plurality of second metal reflection patterns 127 are respectively electrically connected to the second metal reflection layer 122 and are used to provide a common voltage to the plurality of second light-emitting units 121. Specifically, the connection structure between the second metal reflection layer 122 and the second metal reflection pattern 127 can refer to the connection structure between the first metal reflection layer 112 and the first metal reflection pattern 115 in the above embodiments, and this embodiment will not be elaborated here.

[0078] In some embodiments, the second metal reflection layer 122 is electrically connected to the first metal reflection layer 112.

[0079] Of course, in other embodiments, the second metal reflective layer 122 and the first metal reflective layer 112 may not be electrically connected. The second metal reflective layer 122 may be connected to other circuits or other circuit structures in the driving substrate 20, so that the second metal reflective layer 122 can separately provide a common voltage for the second metal reflective pattern 127.

[0080] Specifically, the second metal reflective pattern 127 may be electrically connected to the second metal reflective layer 122 through a wire or an electrode, and the second metal reflective pattern 127 may also be electrically connected to the N-type semiconductor layer in the second light-emitting unit 121. The second metal reflective pattern 127 and the second metal reflective layer 122 may serve as the N electrode of the second light-emitting unit 121 to provide a common voltage for the second light-emitting unit 121.

[0081] By arranging the second metal reflective layer 122 to connect multiple second metal reflective patterns 127 to connect multiple second light-emitting units 121, it is convenient for the second metal reflective layer 122 to connect to the N-type semiconductor layer in the second light-emitting unit 121, thereby reducing the manufacturing difficulty of the LED display device 1.

[0082] Of course, in other embodiments, the second metal reflective layer 122 may be directly electrically connected to the second metal reflective layer 122 through a wire or an electrode, without the need to be connected to the second metal reflective pattern 127.

[0083] In some embodiments, the size of the first metal reflective layer 112 in the gap between adjacent first light-emitting units 111 may sequentially decrease along the direction away from the driving substrate 20, and the size of the first light-emitting unit 111 may sequentially increase along the direction away from the driving substrate 20. This can facilitate the first metal reflective layer 112 to reflect the light generated by the first light-emitting unit 111 to the side away from the driving substrate 20.

[0084] In some embodiments, the position of the first transparent dielectric layer 113 may correspond to the position of the second transparent dielectric layer 123. When the light of the first light-emitting unit 111 travels through the first transparent dielectric layer 113 to the second light-emitting layer system 120, the light of the first light-emitting unit 111 can propagate from the first transparent dielectric layer 113 to the second transparent dielectric layer 123, and then exit the second light-emitting layer system 120 through the second transparent dielectric layer 123, thereby realizing light emission from the side of the LED display device 1 away from the first light-emitting layer system 110.

[0085] In some embodiments, such as Figure 1 and Figure 4As shown, the display substrate 10 may further include a third light-emitting layer system 150 stacked on the side of the second light-emitting layer system 120 facing away from the first light-emitting layer system 110. The structure of the third light-emitting layer system 150 disposed on one side of the second light-emitting layer system 120 may be similar to the structure of the second light-emitting layer system 120 disposed on one side of the first light-emitting layer system 110. The light color of the third light-emitting layer system 150 may be different from the light colors generated by the first light-emitting layer system 110 and the second light-emitting layer system 120. For example, the first light-emitting layer system 110 may generate blue light, the first light-emitting layer system 110 may generate green light, and the third light-emitting layer system 150 may generate red light.

[0086] Please refer to Figure 4 , the third light-emitting layer system 150 may include a plurality of third light-emitting units 151, a third metal reflective layer 152, a third transparent dielectric layer 153, and a plurality of third pixel electrodes 154.

[0087] The plurality of third light-emitting units 151 are arranged at intervals in an array. The interval direction B of the plurality of third light-emitting units 151 may be perpendicular to the stacking direction A. Similarly, the third light-emitting unit 151 may also include a P-type semiconductor layer, an active layer, and an N-type semiconductor layer to jointly form an N-i-P structure, so that under the action of the driving voltage of the driving substrate 20, electrons and holes can be recombined to emit light, so as to form pixel points capable of emitting light. The third light-emitting unit 151 may also be formed by doping in semiconductor materials such as AlN, AlGaN, GaN, InGaN, AlInGaN, GaAs, GaP, GaInN, GaAsP, AlGaAs, AlGaInP, etc.

[0088] As Figure 4 shown, the plurality of third pixel electrodes 154 are correspondingly disposed on the side of the plurality of third light-emitting units 151 facing the driving substrate 20. Among them, the plurality of third pixel electrodes 154 may also be electrically connected to the driving substrate 20, and the plurality of third pixel electrodes 154 are also respectively electrically connected to the P-type semiconductor layers in the corresponding third light-emitting units 151, and the driving substrate 20 provides a driving voltage to the third light-emitting units 151 through the plurality of third pixel electrodes 154. As an example, the third pixel electrode 154 may be made of metal copper, aluminum, silver, titanium, tungsten, nickel, gold, indium tin oxide (ITO), or other conductive materials.

[0089] As Figure 4As shown, the third metal reflective layer 152 is disposed in the interval area between multiple third light-emitting units 151 and surrounds each third light-emitting unit 151. The third transparent dielectric layer 153 is disposed between the third light-emitting unit 151 and the third metal reflective layer 152. Specifically, along the interval direction B of the multiple third light-emitting units 151, the third transparent dielectric layer 153 wraps around each third light-emitting unit 151. The third metal reflective layer 152 is disposed on the side of the third transparent dielectric layer 153 facing away from the third light-emitting unit 151. The third metal reflective layer 152 wraps around each third light-emitting unit 151 through the second transparent dielectric layer 123.

[0090] Among them, the third metal reflective layer 152 can have the function of reflecting light, so as to be able to reflect the light transmitted through the third transparent dielectric layer 153, thereby reducing the light from propagating along the interval direction B into other third light-emitting units 151, and reducing the light crosstalk phenomenon between the multiple third light-emitting units 151. Moreover, the third metal reflective layer 152 can be connected to the N-type semiconductor in the third light-emitting unit 151, thereby providing a common voltage to the N-type semiconductor, so that the third light-emitting unit 151 can emit light normally. The third metal reflective layer 152 can be made of materials with high reflectivity and conductivity such as silver and aluminum.

[0091] The projections of the multiple third light-emitting units 151 along the stacking direction A can fall within the projection of the corresponding second metal reflective pattern 127. Therefore, when the light of the second light-emitting unit 121 is incident on the third light-emitting unit 151 along the stacking direction A, most of the light will be reflected back to the second light-emitting unit 121 by the second metal reflective pattern 127, so that most of the light of the second light-emitting unit 121 is concentrated and emitted from the second transparent dielectric layer 123, and will not pass through the third light-emitting unit 151 to cause crosstalk of light colors, thereby improving the display contrast of different light colors in the LED display device 1 and reducing the light loss.

[0092] In some embodiments, multiple third metal transfer electrodes 156 can also be provided in the LED display device 1. Each third metal transfer electrode 156 is electrically connected to the corresponding third pixel electrode 154, and penetrates through the second light-emitting layer system 120 and the first light-emitting layer system 110 to be electrically connected to the driving substrate 20. Among them, the third metal transfer electrode 156 is misaligned with the second light-emitting unit 121 and the first light-emitting unit 111 in the stacking direction A, and the third metal transfer electrode 156 is electrically isolated from the first light-emitting layer system 110, the second light-emitting layer system 120, and the third metal reflective layer 152.

[0093] Each third pixel electrode 154 partially extends to a position between two third light-emitting units 151 correspondingly to connect to a corresponding third metal transfer electrode 156, so that the driving substrate 20 can provide a driving voltage to the third light-emitting unit 151 through the plurality of third metal transfer electrodes 156 and the plurality of third pixel electrodes. As an example, the structure of the third pixel electrode 154 and the second pixel electrode 124 projected onto the first metal reflection layer 112 along the stacking direction A can be as Figure 5 shown. The projections of the third metal transfer electrode 156 and the second metal transfer electrode 140 along the stacking direction A can be staggered from each other, so as to reduce the interference between the first light-emitting layer system 110, the second light-emitting layer system 120, and the third light-emitting layer system 150.

[0094] Moreover, the N-type semiconductor of the third light-emitting unit 151 can also be connected to the third metal reflection layer 152 through an electrode or a wire. The third metal reflection layer 152 serves as the N electrode of the third light-emitting unit 151 to provide a common voltage for the third light-emitting unit 151. For the specific structure in the third light-emitting layer system 150, reference can be made to the structure of the second metal transfer electrode 140 in the second light-emitting layer system 120 described above, and details will not be repeated in this embodiment.

[0095] In some embodiments, reference can also be made to the connection structure of the second light-emitting layer system 120 disposed on the first light-emitting layer system 110 and connected to the driving substrate 20, and other light-emitting layer systems are stacked on the third light-emitting layer system 150, so that the LED display device 1 can emit light of more colors.

[0096] Taking the structure of the above LED display device 1 as an example, the manufacturing method of the LED display device 1 will be described below by way of example. As Figures 6 to 12 shown, where Figures 6 to 7 shows the manufacturing method flow of the LED display device 1 in an embodiment of the present application, Figures 8 to 12 shows Figures 6 to 7 The manufacturing process and component structure involved in the step flow of

[0097] S100: Provide a first light-emitting layer system, where the first light-emitting layer system includes a plurality of first light-emitting units, a first metal reflection layer, a first transparent dielectric layer, a plurality of first pixel electrodes, and a plurality of first metal reflection patterns. The plurality of first light-emitting units are arranged at intervals in an array. The plurality of first pixel electrodes and the plurality of first metal reflection patterns are respectively disposed on two sides of the plurality of first light-emitting units facing the driving substrate in the stacking direction. The first metal reflection layer is disposed in the interval area between the plurality of first light-emitting units and surrounds each first light-emitting unit. The first transparent dielectric layer is disposed between the first light-emitting unit and the first metal reflection layer, and a first light-emitting area is formed between each first metal reflection pattern and the first metal reflection layer.

[0098] In some embodiments, such as Figure 7 and Figure 9 shown, step S100 may include the following steps S110 - S150:

[0099] S110: Provide a first growth substrate.

[0100] Among them, the first growth substrate 160 may be a substrate such as sapphire, silicon, silicon carbide, gallium nitride, etc., or may also be a substrate made of materials such as ceramics, glass, PCB substrate, etc.

[0101] S120: Form a first light-emitting epitaxial layer on the first growth substrate and pattern it to form a plurality of first light-emitting units arranged at intervals in an array.

[0102] Specifically, a first light-emitting epitaxial layer 1111 may be grown and formed on the first growth substrate 160. Or a first light-emitting epitaxial layer 1111 may be provided, and the first light-emitting epitaxial layer 1111 may be fixed on the first growth substrate 160 by a transfer method, or other methods may also be used, which are not specifically listed one by one in this embodiment. Among them, the P-type semiconductor layer of the first light-emitting epitaxial layer 1111 is away from the first growth substrate 160, and the N-type semiconductor layer of the first light-emitting epitaxial layer 1111 is close to and in contact with the first growth substrate 160.

[0103] Furthermore, the first light-emitting epitaxial layer 1111 may be etched to form a plurality of first light-emitting units 111 arranged at intervals in an array.

[0104] S130: Correspondingly form a plurality of first pixel electrodes 114 on the side of the plurality of first light-emitting units facing away from the first growth substrate.

[0105] One first pixel electrode 114 is formed and provided on each first light-emitting unit 111, wherein the first pixel electrode 114 makes an ohmic contact with the P-type semiconductor in the first light-emitting unit 111.

[0106] S140: Form a first transparent dielectric layer at least in the interval areas between the plurality of first light-emitting units and etch part of the interval areas.

[0107] Specifically, reference may be made to Figure 8 and Figure 9 , to form a first transparent dielectric layer 113 in the interval areas between the plurality of first light-emitting units 111, and etch the first transparent dielectric layer 113 correspondingly, and etch part of the interval areas in the interval areas between adjacent first light-emitting units 111.

[0108] S150: Form a first metal reflection layer surrounding the plurality of first light-emitting units respectively in the etched part of the interval areas.

[0109] Specifically, reference can be made to Figure 8 and Figure 9 , a grid-shaped first metal reflective layer 112 is formed in a partial interval area of the etching, and the grid-shaped first metal reflective layer 112 forms a plurality of first window areas 1121, and the projection of the first pixel electrode 114 along the stacking direction A falls into the corresponding first window area 1121.

[0110] Among them, please combine Figure 8 and Figure 9 , Figure 8 shows the first metal reflective layer 112 from one perspective, Figure 9 shows the first metal reflective layer 112 from another perspective. Combining Figure 8 and Figure 9 it can be known that the first metal reflective layer 112 and the first transparent dielectric layer 113 form a first notch 1122, and when the subsequent second metal transfer electrode 140 is added, it can be added corresponding to the first notch 1122.

[0111] In some embodiments, a nanoscale flat surface is formed on the surface of the wafer by using a CMP process. That is, a nanoscale flat surface is formed on the side of the first metal reflective layer 112 and the first transparent dielectric layer 113 facing away from the first growth substrate 160 by using a CMP process.

[0112] In some embodiments, if the LED display device 1 includes a first dielectric reflective layer 117, reference can be made to Figure 8 as shown, after the first metal reflective layer 112 is added, a first dielectric reflective layer 117 can be covered on the side of the first metal reflective layer 112 facing away from the first growth substrate 160.

[0113] In some embodiments, as Figure 8 and Figure 9 shown, a corresponding first dielectric bonding layer 118 can be provided on the side of the first dielectric reflective layer 117 facing away from the first metal reflective layer 112 and the first transparent dielectric layer 113, and through holes are formed through the first transparent dielectric layer 113, the first dielectric reflective layer 117 and the first dielectric bonding layer 118 corresponding to the positions of the plurality of first pixel electrodes 114, and then a first metal transfer electrode 130 is added in the plurality of through holes. One end of the first metal transfer electrode 130 can be electrically connected to the first pixel electrode 114, and the other end can be exposed on the side of the first dielectric bonding layer 118 facing away from the first dielectric reflective layer 117, so that the subsequent first light-emitting layer system 110 can be fixed to the driving substrate 20 through the corresponding first metal transfer electrode 130 and the first dielectric bonding layer 118.

[0114] In some embodiments, sub - electrodes of the second metal transfer electrode 140 can be gradually added to the first light - emitting layer system 110, and then, after the first light - emitting layer system 110 is fixed to the driving substrate 20, the remaining sub - electrodes of the second metal transfer electrode 140 are added on the first light - emitting layer system 110 to form the second metal transfer electrode 140.

[0115] S200: Provide a second light - emitting layer system, where the second light - emitting layer system includes a plurality of second light - emitting units, a second metal reflective layer, a second transparent dielectric layer, and a plurality of second pixel electrodes. The plurality of second light - emitting units are arranged at intervals in an array, the plurality of second pixel electrodes are correspondingly arranged on one side of the plurality of second light - emitting units, the second metal reflective layer is arranged in the interval area between the plurality of second light - emitting units and surrounds each second light - emitting unit, and the second transparent dielectric layer is arranged between the second light - emitting unit and the second metal reflective layer.

[0116] Specifically, a second growth substrate 170 can be provided, and the second light - emitting layer system 120 is formed on the second growth substrate 170. The preparation process of the second light - emitting layer system 120 can refer to steps S110 - S150, and this embodiment will not be elaborated here.

[0117] In some embodiments, a third dielectric bonding layer 125 is covered on one side of the plurality of second pixel electrodes 124 in the second light - emitting layer system 120.

[0118] S300: Stack the first light - emitting layer system and the second light - emitting layer system on the driving substrate in sequence, so that the projections of the plurality of second light - emitting units along the stacking direction A respectively fall within the projections of the corresponding first metal reflective patterns along the stacking direction A.

[0119] Specifically, as Figure 10 shown, provide a driving substrate 20. The driving substrate 20 may include a substrate body 210, a plurality of power - supply electrodes 220, and a fourth dielectric bonding layer 230 filled between the plurality of power - supply electrodes 220. Among them, the plurality of power - supply electrodes 220 are arranged corresponding to the positions of the plurality of first metal transfer electrodes 130 and the plurality of second metal transfer electrodes 140. The substrate body 210 can be a CMOS (Complementary Metal Oxide Semiconductor) substrate. Relevant circuits and a plurality of switching devices (not shown in the figure) corresponding to each display pixel can be arranged inside the substrate body, and the plurality of power - supply electrodes 220 are arranged on the substrate body and electrically connected to the plurality of switching devices.

[0120] Exemplarily, the power supply electrode 220 can be made of metallic copper, aluminum, silver, titanium, tungsten, nickel, gold, indium tin oxide (ITO), or other materials with conductivity. The fourth dielectric bonding layer 230 can be made of silicon dioxide, silicon nitride, or other insulating materials in the form of an oxide layer.

[0121] In some embodiments, step S300 includes step S310:

[0122] S310: Fix the sides of a plurality of first pixel electrodes and the first metal reflective layer facing away from the first growth substrate to the driving substrate, and remove the first growth substrate.

[0123] Specifically, place the first light-emitting layer system 110 on the driving substrate 20 in such a way that the first dielectric reflective layer 117 and the first metal transfer electrode 130 face the driving substrate 20, where a plurality of first metal transfer electrodes 130 correspond to the corresponding power supply electrodes 220, and the first dielectric reflective layer 117 corresponds to the fourth dielectric bonding layer 230. Some sub-electrodes of the second metal transfer electrode 140 also correspond to a part of the power supply electrodes 220. Then, the TCB (Thermal Compression Bonding) process can be further used to bond the first metal transfer electrode 130 and the corresponding power supply electrode 220 to each other, and some sub-electrodes of the second metal transfer electrode 140 are also bonded to the corresponding power supply electrodes 220, so that the first dielectric reflective layer 117 and the fourth dielectric bonding layer 230 are bonded to each other. Or a room-temperature bonding process can be used to achieve hybrid bonding between the first light-emitting layer system 110 and the driving substrate 20, thereby realizing a high-strength connection between the driving substrate 20 and the first light-emitting layer system 110.

[0124] Then, the first growth substrate 160 can be removed by processes such as grinding, chemical etching, or laser lift-off (LLO) to expose a plurality of first light-emitting units 111.

[0125] In some embodiments, the manufacturing method further includes:

[0126] S320: Form a plurality of first metal reflective patterns on the other side of the plurality of first light-emitting units facing away from the driving substrate.

[0127] Wherein, as Figure 10As shown, corresponding to the positions of the plurality of first light-emitting units 111, a plurality of first metal reflection patterns 115 are provided on the side of the plurality of first light-emitting units 111 facing away from the driving substrate 20, and the plurality of first metal reflection patterns 115 are electrically connected to the N-type semiconductor layers in the corresponding first light-emitting units 111. Further, electrodes or wires can be used to connect the first metal reflection patterns 115 and the first metal reflection layer 112, so that each first metal reflection pattern 115 is electrically connected to the first metal reflection layer 112.

[0128] Further, as Figure 10 shown, a second dielectric bonding layer 119 can be covered on the side of the first metal reflection pattern 115 facing away from the first light-emitting unit 111.

[0129] In some embodiments, as Figure 11 shown, on the side of the second dielectric bonding layer 119 facing away from the first metal reflection pattern 115, the first transparent dielectric layer 113 in the first notch 1122 can be etched, and then the remaining sub-electrodes of the second metal transfer electrode 140 are added in the first notch 1122, so as to form the second metal transfer electrode 140 in the first light-emitting layer system 110, and the second metal transfer electrode 140 is electrically isolated from the first light-emitting layer system 110, and the second metal transfer electrode 140 is electrically connected to the corresponding power supply electrode 220. Among them, Figure 11 the screenshot view shown in Figure 10 is a different screenshot view from the screenshot view shown in Figure 11 , that is, the first metal reflection layer 112 in Figure 10 is another view of the first metal reflection layer 112 shown in

[0130] In some embodiments, as Figure 11 shown, the second light-emitting layer system 120 can also be fixed to the first light-emitting layer system 110 by a hybrid bonding method. The second light-emitting layer system 120 can include a fourth metal transfer electrode 129, one end of the fourth metal transfer electrode 129 is electrically connected to the second pixel electrode 124, and one end is exposed on the side of the third dielectric bonding layer 125 facing away from the second light-emitting unit 121. Among them, the position of the fourth metal transfer electrode 129 corresponds to that of the second metal transfer electrode 140.

[0131] Further, the second light-emitting layer system 120 can be placed on the first light-emitting layer system 110 in such a way that the fourth metal transfer electrode 129 correspondingly contacts the second metal transfer electrode 140, and the third dielectric bonding layer 125 correspondingly contacts the second dielectric bonding layer 119. Then, a Hybrid Bonding process can be further employed to bond and connect the fourth metal transfer electrode 129 to the corresponding second metal transfer electrode 140, and the third dielectric bonding layer 125 to the second dielectric bonding layer 119, thereby realizing the bonding connection between the first light-emitting layer system 110 and the second light-emitting layer system 120. The second pixel electrode 124 in the second light-emitting layer system 120 can be electrically connected to the power supply electrode 220 of the driving substrate 20 through the fourth metal transfer electrode 129 and the second metal transfer electrode 140.

[0132] Then, processes such as grinding, chemical etching, or laser lift-off (LLO) can be used to remove the second growth substrate 170 to expose a plurality of second light-emitting units 121.

[0133] In some embodiments, a third light-emitting layer system 150 can be added on the side of the second light-emitting layer system 120 facing away from the first light-emitting layer system 110 by referring to the formation method of the second light-emitting layer system 120.

[0134] Specifically, as Figure 12 shown, a second metal reflection pattern 127 and a dielectric bonding layer can be added on the side of the second light-emitting unit 121 facing away from the first light-emitting layer system 110, and transfer electrodes can be pre-set and bonded to each other in the first light-emitting layer system 110 and the second light-emitting layer system 120, so that when the third light-emitting layer system 150 is bonded and connected to the second light-emitting layer system 120, the third pixel electrode 154 in the third light-emitting layer system 150 is electrically connected to a partial power supply electrode 220 of the driving substrate 20 through the correspondingly connected transfer electrodes in sequence.

[0135] Among them, the specific formation and addition method of the third light-emitting layer system 150 can refer to the formation method of the second light-emitting layer system 120 described above, and will not be specifically elaborated in this embodiment.

[0136] In summary, the LED display device 1 of the present application is provided with a first light-emitting layer system 110 and a second light-emitting layer system 120 stacked in sequence along the stacking direction A. Among them, a plurality of first pixel electrodes 114 and a plurality of first metal reflection patterns 115 of the first light-emitting layer system 110 are respectively arranged on both sides of a plurality of first light-emitting units 111. The first transparent dielectric layer 113 and the first metal reflection layer 112 in the first light-emitting layer system 110 sequentially surround each first light-emitting unit 111. Due to the reflection effect of the first metal reflection pattern 115 and the first metal reflection layer 112, the light of the plurality of first light-emitting units 111 will be emitted from the first transparent dielectric layer 113. Moreover, the projections of the plurality of second light-emitting units 121 of the second light-emitting layer system 120 along the stacking direction A respectively fall within the projections of the corresponding first metal reflection patterns 115 along the stacking direction A. Therefore, when the light of the first light-emitting unit 111 irradiates the second light-emitting unit 121 along the stacking direction A, most of the light will be reflected back to the first light-emitting unit 111 by the first metal reflection pattern 115, so that most of the light of the first light-emitting unit 111 is concentrated and emitted from the first transparent dielectric layer 113, and will not pass through the second light-emitting unit 121 to cause color crosstalk of light. Most of the light generated by the second light-emitting unit 121 will also be reflected by the first metal reflection pattern 115 and will not pass through the first light-emitting unit 111, which can make the light generated by the first light-emitting unit 111 and the second light-emitting unit 121 not easily cause color crosstalk, thereby improving the display contrast of different light colors in the LED display device 1 and reducing the light loss. Moreover, the second transparent dielectric layer 123 and the second metal reflection layer 122 of the second light-emitting layer system 120 also sequentially surround each second light-emitting unit 121, and the second metal reflection layer 122 can also reflect the light of the second light-emitting unit 121. Therefore, the light extraction collimation and optical efficiency of the LED display device 1 can be improved.

[0137] The above are only the embodiments of the present application, and do not limit the patent scope of the present application. Any equivalent structure or equivalent process transformation made by using the content of the specification and drawings of the present application, or directly or indirectly applied in other related technical fields, shall be equally included in the patent protection scope of the present application.

Claims

1. An LED display device, characterized in that: The LED display device comprises a driving substrate and a display substrate stacked along a predetermined stacking direction, wherein the display substrate comprises a first light-emitting layer system and a second light-emitting layer system sequentially stacked on the driving substrate along the stacking direction; The first light-emitting layer system includes a plurality of first light-emitting units, a first metal reflective layer, a first transparent medium layer, a plurality of first pixel electrodes and a plurality of first metal reflective patterns, wherein the plurality of first light-emitting units are arranged in an array and spaced apart from each other, the plurality of first pixel electrodes and the plurality of first metal reflective patterns are respectively and correspondingly arranged on one side of the plurality of first light-emitting units facing the driving substrate and the other side away from the driving substrate, the first metal reflective layer is arranged in the spacer area between the plurality of first light-emitting units and surrounds each of the first light-emitting units, the first transparent medium layer is arranged between the first light-emitting units and the first metal reflective layer, and a first light-emitting area is formed between each of the first metal reflective patterns and the first metal reflective layer; The second light-emitting layer system includes a plurality of second light-emitting units, a second metal reflective layer, a second transparent medium layer and a plurality of second pixel electrodes. The plurality of second light-emitting units are arranged in an array and spaced apart. The plurality of second pixel electrodes are correspondingly arranged on a side of the plurality of second light-emitting units facing the driving substrate. The second metal reflective layer is arranged in a spacing area between the plurality of second light-emitting units and surrounds each of the second light-emitting units. The second transparent medium layer is arranged between the second light-emitting unit and the second metal reflective layer. The projections of the plurality of second light-emitting units along the stacking direction respectively fall into the projections of the corresponding first metal reflective pattern along the stacking direction.

2. The LED display device according to claim 1, characterized in that: The first metal reflective layer is arranged in a grid shape, and the plurality of first metal reflective patterns are respectively electrically connected to the first metal reflective layer and are used to provide a common voltage to the plurality of first light-emitting units.

3. The LED display device according to claim 1, characterized in that: The first transparent medium layer further covers the first light emitting units and the first pixel electrodes on one side facing the driving substrate; The first metal reflective layer is provided with a plurality of first window areas respectively corresponding to the plurality of first pixel electrodes, and the projections of the first pixel electrodes along the stacking direction fall into the corresponding first window areas; The first light-emitting layer system further includes a first dielectric reflective layer, and the first dielectric reflective layer covers the first metal reflective layer and the first transparent dielectric layer exposed through the first window area from a side facing the driving substrate.

4. The LED display device according to claim 3, characterized in that: The reflectivity of the first metal reflective pattern is not less than the reflectivity of the first dielectric reflective layer.

5. The LED display device according to claim 3, characterized in that: The first light-emitting layer system also includes a first dielectric bonding layer covering the first dielectric reflective layer from the side facing the driving substrate, and the display substrate also includes a plurality of first metal transfer electrodes penetrating the first dielectric bonding layer and the first dielectric reflective layer and electrically connected to the plurality of first pixel electrodes respectively. The first dielectric bonding layer and the plurality of first metal transfer electrodes are bonded to the driving substrate in a hybrid bonding manner, and the plurality of first metal transfer electrodes are further electrically connected to the driving substrate to provide driving voltages to the plurality of first pixel electrodes respectively.

6. The LED display device according to claim 5, characterized in that: The first light-emitting layer system and the second light-emitting layer system further include a second dielectric bonding layer and a third dielectric bonding layer on the adjacent sides thereof, and the second dielectric bonding layer and the third dielectric bonding layer are bonded to each other to fix the second light-emitting layer system on the first light-emitting layer system.

7. The LED display device according to claim 1, characterized in that: The display substrate further includes a plurality of second metal switching electrodes penetrating the first light-emitting layer system, and the plurality of second pixel electrodes are respectively electrically connected to the driving substrate via the plurality of second metal switching electrodes to provide driving voltages to the plurality of second pixel electrodes respectively.

8. The LED display device according to claim 7, characterized in that: The first metal reflective layer is further provided with a plurality of first notches, and the plurality of second metal switching electrodes are respectively and correspondingly arranged in the plurality of first notches.

9. The LED display device according to claim 1, characterized in that: The second light-emitting layer system further includes a plurality of second metal reflective patterns, which respectively cover a side of the plurality of light-emitting units away from the driving substrate, and form a second light-emitting area between each second metal reflective pattern and the second metal reflective layer.

10. The LED display device according to claim 9, characterized in that: The second metal reflective layer is arranged in a grid shape, the plurality of second metal reflective patterns are respectively electrically connected to the second metal reflective layer and used to provide a common voltage to the plurality of second light-emitting units, and the second metal reflective layer is electrically connected to the first metal reflective layer.

11. The LED display device according to claim 9, characterized in that: The display substrate further includes a third light-emitting layer system stacked on a side of the second light-emitting layer system away from the first light-emitting layer system; The third light-emitting layer system includes a plurality of third light-emitting units, a third metal reflective layer, a third transparent medium layer and a plurality of third pixel electrodes. The plurality of third light-emitting units are arranged in an array and spaced apart. The plurality of third pixel electrodes are correspondingly arranged on a side of the plurality of third light-emitting units facing the driving substrate. The third metal reflective layer is arranged in a spacing area between the plurality of third light-emitting units and surrounds each of the third light-emitting units. The third transparent medium layer is arranged between the third light-emitting unit and the third metal reflective layer. The projections of the plurality of third light-emitting units along the stacking direction respectively fall within the projections of the corresponding second metal reflective pattern.

12. A method for manufacturing an LED display device, characterized in that: The manufacturing method comprises: A first light-emitting layer system is provided, wherein the first light-emitting layer system comprises a plurality of first light-emitting units, a first metal reflective layer, a first transparent medium layer, a plurality of first pixel electrodes and a plurality of first metal reflective patterns, the plurality of first light-emitting units are arranged in an array, the plurality of first pixel electrodes and the plurality of first metal reflective patterns are respectively and correspondingly arranged on both sides of the plurality of first light-emitting units in a stacking direction, the first metal reflective layer is arranged in an interval area between the plurality of first light-emitting units and surrounds each of the first light-emitting units, the first transparent medium layer is arranged between the first light-emitting units and the first metal reflective layer, and a first light-emitting area is formed between each of the first metal reflective pattern and the first metal reflective layer; A second light-emitting layer system is provided, wherein the second light-emitting layer system comprises a plurality of second light-emitting units, a second metal reflective layer, a second transparent medium layer and a plurality of second pixel electrodes, the plurality of second light-emitting units are arranged in an array and spaced apart, the plurality of second pixel electrodes are correspondingly arranged on one side of the plurality of second light-emitting units, the second metal reflective layer is arranged in the spaced area between the plurality of second light-emitting units and surrounds each of the second light-emitting units, and the second transparent medium layer is arranged between the second light-emitting units and the second metal reflective layer; The first light-emitting layer system and the second light-emitting layer system are sequentially stacked on a driving substrate so that projections of the plurality of second light-emitting units along the stacking direction fall within projections of the corresponding first metal reflective pattern along the stacking direction.

13. The manufacturing method according to claim 12, characterized in that: The providing of a first light-emitting layer system comprises: providing a first growth substrate; forming a first light-emitting epitaxial layer on the first growth substrate, and patterning the layer to form a plurality of first light-emitting units arranged in an array; A plurality of first pixel electrodes are correspondingly formed on a side of the plurality of first light-emitting units away from the first growth substrate; forming a first transparent medium layer at least in the spaced regions between the plurality of first light emitting units, and etching a portion of the spaced regions; forming a first metal reflective layer surrounding the plurality of first light-emitting units respectively in the etched partial spacing regions; The step of sequentially stacking the first light-emitting layer system and the second light-emitting layer system on the driving substrate comprises: Fixing the plurality of first pixel electrodes and the first metal reflective layer on a side away from the first growth substrate to the driving substrate, and removing the first growth substrate; The providing of the first light-emitting layer system further comprises: The plurality of first metal reflective patterns are formed on the other side of the plurality of first light emitting units away from the driving substrate.

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