Perovskite battery assembly and preparation method thereof

Abstract

The invention provides a perovskite battery assembly and a preparation method of the perovskite battery assembly. The perovskite battery assembly comprises a perovskite battery and a plurality of field effect transistors. Wherein the perovskite battery comprises a plurality of sub-batteries which are connected in series; the grid electrodes of the plurality of field-effect tubes are electrically connected with the cathodes of the plurality of sub-cells in a one-to-one correspondence manner, the cathode of each sub-cell is also electrically connected with the source electrode of the corresponding field-effect tube, and the drain electrode of each field-effect tube is electrically connected with the anode of the corresponding sub-cell. Through the junction box, the technical problems that the hot spot bypass protection capability of the whole assembly is limited and particularly effective hot spot protection cannot be provided for each sub-battery in the assembly due to the fact that only one bypass diode is integrated in the junction box in a thin film type structure in the prior art are solved.

Description

Technical Field

[0001] The present invention relates to the technical field of perovskite solar cells, and in particular, to a perovskite solar cell module and a preparation method thereof. Background Art

[0002] Photovoltaic modules usually incorporate bypass diodes in the junction box for the battery string to prevent the generation of the hot spot effect and protect the solar cell module from damage. When one or several solar cells in the photovoltaic module fail due to shading, hot spots or other faults, these solar cells will become loads, consuming the energy generated by other normal solar cells, resulting in a local temperature increase. In severe cases, it may even damage or burn out the battery. The bypass diode can prevent the hot spot effect: when a part of the solar cells are shaded or fail, the bypass diode will conduct, bypassing these solar cells, so that the current can continue to flow, thus avoiding the generation of high-temperature areas. At the same time, the bypass diode can protect the solar cells and the module, avoiding the performance degradation or damage of the entire module due to the failure of some solar cells. And when some solar cells fail, the conduction of the bypass diode can also enable other normally operating solar cells to continue to provide power for the system and maintain the operation of the solar power generation system.

[0003] Crystalline silicon solar cell modules generally have three bypass diodes in the junction box, which are connected in parallel with the battery string through the bus bar. Each bypass diode plays a bypass protection role for one-third of the solar cells and is welded to the battery string through the bus bar. However, due to its thin-film module structure, the perovskite solar cell module is generally designed with only one bypass diode connected in parallel in the junction box, which can only play a bypass role for the entire module and has limited protection against hot spots for the sub-cells in the module.

[0004] Based on this, there is an urgent need for a new perovskite solar cell module to at least solve the technical problem that due to its thin-film structure, usually only one bypass diode is integrated in the junction box, resulting in limited hot spot bypass protection ability for the entire module, especially unable to provide effective hot spot protection for each sub-cell in the module. Summary of the Invention

[0005] The main object of the present invention is to provide a perovskite solar cell module and a preparation method thereof to solve the problem that the existing perovskite solar cell module cannot provide effective hot spot protection for each sub-cell in the module.

[0006] To achieve the above object, according to one aspect of the present invention, a perovskite battery assembly is provided, which includes a perovskite battery and a plurality of field effect transistors; wherein, the perovskite battery includes a plurality of sub-batteries connected in series; the gates of the plurality of field effect transistors are electrically connected to the cathodes of the plurality of sub-batteries one by one, and the cathode of each sub-battery is also electrically connected to the source of the corresponding field effect transistor, and the drain of each field effect transistor is electrically connected to the anode of the corresponding sub-battery.

[0007] Optionally, the drain of at least one field effect transistor is further electrically connected to the cathode of the previous sub-battery connected in series with the corresponding sub-battery.

[0008] Optionally, the source of at least one field effect transistor is electrically connected to the anode of the next sub-battery connected in series with the corresponding sub-battery.

[0009] Optionally, the field effect transistor is an amorphous silicon field effect transistor.

[0010] According to another aspect of the present invention, a perovskite battery assembly is provided. The perovskite battery assembly includes: a substrate, and a transparent conductive layer, a functional layer, and a metal electrode layer stacked in a direction away from the substrate. The transparent conductive layer includes a first transparent conductive electrode and a second transparent conductive electrode spaced apart along a first direction. The functional layer includes a first perovskite unit and a first protection unit spaced apart along a second direction. The first perovskite unit and the first protection unit are respectively stacked with the first transparent conductive electrode. The second direction and the first direction are perpendicular in the same plane, and the first direction is parallel to the transparent conductive layer. The metal electrode layer includes a first metal electrode on the first perovskite unit and a second metal electrode on the first protection unit. The second metal electrode includes a first metal part, and a second metal part and a third metal part spaced apart on opposite sides of the first metal part in the first direction. The first metal electrode is in contact with the first metal part, and the third metal part is in contact with the second transparent conductive electrode. A first connection part and a second connection part, wherein the first connection part extends from one end of the second metal part to the first transparent conductive electrode, the second connection part extends from one end of the first metal electrode to the second transparent conductive electrode, and the second connection part penetrates the first perovskite unit.

[0011] Optionally, the ribbon further includes a second perovskite unit and a second protection unit spaced apart in a second direction. The second perovskite unit and the second protection unit are respectively stacked with the second transparent conductive electrode; the transparent conductive layer further includes a third transparent conductive electrode located on the side of the second transparent conductive electrode away from the first transparent conductive electrode and spaced apart from the second transparent conductive electrode. The metal electrode layer further includes a third metal electrode on the second perovskite unit and a fourth metal electrode on the second protection unit. The fourth metal electrode includes a fourth metal portion, and a fifth metal portion and a sixth metal portion spaced apart on opposite sides of the fourth metal portion in a first direction. The third metal electrode is in contact with the fourth metal portion, the fifth metal portion is in contact with the first metal electrode, and the sixth metal portion is in contact with the third transparent conductive electrode; the perovskite battery assembly further includes a third connection portion, and the third connection portion extends from one end of the third metal electrode to the third transparent conductive electrode and penetrates the second perovskite unit.

[0012] Optionally, the first perovskite unit and the second perovskite unit have opposite first and second sides in the second direction. The first protection unit is located on the first side, and the second protection unit is located on the second side.

[0013] Optionally, at least one sub-cell includes a second transparent conductive electrode, a second perovskite unit, and a third metal electrode stacked in a direction away from the substrate; at least one field effect transistor includes a transparent conductive layer, a second protection unit, and a fourth metal electrode stacked in a direction away from the substrate, and the fourth metal portion constitutes the gate of the field effect transistor, the fifth metal portion constitutes the drain of the field effect transistor, and the sixth metal portion constitutes the source of the field effect transistor.

[0014] Optionally, the perovskite battery assembly further includes: an insulating dielectric layer including a first insulating portion, a second insulating portion, and a third insulating portion respectively in contact with the first insulating portion; wherein the first insulating portion is located between the first perovskite unit and the first protection unit in the second direction; the second insulating portion and the third insulating portion are respectively located between the first protection unit and the transparent conductive layer, and the second insulating portion and the third insulating portion are spaced apart on the first transparent conductive electrode in the first direction.

[0015] Optionally, at least one sub-cell includes a first transparent conductive electrode, a first perovskite unit, and a first metal electrode stacked in a direction away from the substrate; at least one field effect transistor includes a transparent conductive layer, a first protection unit, and a second metal electrode stacked in a direction away from the substrate. The transparent conductive layer includes a first transparent conductive electrode and a second transparent conductive electrode, and the first metal portion constitutes the gate of the field effect transistor, the second metal portion constitutes the drain of the field effect transistor, and the third metal portion constitutes the source of the field effect transistor.

[0016] According to another aspect of the present invention, there is provided a method for preparing a perovskite battery module as any one of the above, the preparation method comprising: forming a transparent conductive layer on a substrate, the transparent conductive layer comprising a first transparent conductive electrode and a second transparent conductive electrode spaced apart along a first direction, the first direction being parallel to the transparent conductive layer; forming a functional layer on a side of the first transparent conductive electrode facing away from the substrate, the functional layer comprising a first perovskite unit and a first protection unit spaced apart along a second direction, such that the first perovskite unit and the first protection unit are respectively stacked with the first transparent conductive electrode, the first direction and the second direction being perpendicular in the same plane; forming a first connection portion and a second connection portion on a side of the transparent conductive layer facing away from the substrate, and forming a metal electrode layer on a side of the functional layer facing away from the transparent conductive layer, the metal electrode layer comprising a first metal electrode on the first perovskite unit and a second metal electrode on the first protection unit, the second metal electrode comprising a first metal portion and second and third metal portions spaced apart on opposite sides of the first metal portion in the first direction, the first metal electrode being in contact with the first metal portion, the third metal portion being in contact with the second transparent conductive electrode, and the first connection portion extending from one end of the second metal portion to the first transparent conductive electrode, the second connection portion extending from one end of the first metal electrode to the second transparent conductive electrode, and the second connection portion penetrating the first perovskite unit.

[0017] Optionally, a surface of the transparent conductive layer facing away from the substrate comprises a spaced region and a perovskite region and a bypass protection region located on opposite sides of the spaced region along the second direction. Before the step of forming the functional layer, the preparation method further comprises: forming an insulating dielectric layer on the spaced region and the bypass protection region, the insulating dielectric layer comprising a first insulating portion and second and third insulating portions respectively in contact with the first insulating portion; wherein, the first insulating portion is located between the perovskite region and the bypass protection region in the second direction; the second and third insulating portions are respectively located on the bypass protection region, and the second and third insulating portions are spaced apart on the first transparent conductive electrode along the first direction.

[0018] Optionally, the step of forming the functional layer comprises: forming a first protection unit on a side of the transparent conductive layer facing away from the substrate after covering the perovskite region with a mask structure; removing the mask structure and forming a first perovskite unit on a side of the transparent conductive layer facing away from the substrate.

[0019] Applying the technical solution of the present invention, a perovskite battery module includes a perovskite battery and a plurality of field effect transistors. Among them, the perovskite battery includes a plurality of sub-cells connected in series. The gates of the plurality of field effect transistors are electrically connected to the cathodes of the plurality of sub-cells one by one, and the cathode of each sub-cell is also electrically connected to the source of the corresponding field effect transistor. The drain of each field effect transistor is electrically connected to the anode of the corresponding sub-cell. Therefore, each field effect transistor is connected in parallel with the corresponding sub-cell, so that each sub-cell has its own bypass protection circuit. Even if a single sub-cell fails or is shaded, the increase in its voltage can directly trigger the corresponding field effect transistor to turn on, thereby bypassing the sub-cell and avoiding the generation of the hot spot effect. That is, through the present application, the technical problem in the prior art that due to the thin film type structure usually only integrating one bypass diode in the junction box, the hot spot bypass protection ability of the entire module is limited, especially unable to provide effective hot spot protection for each sub-cell in the module is solved. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] The accompanying drawings forming a part of this specification are used to provide a further understanding of the present invention. The schematic embodiments and descriptions thereof of the present invention are used to explain the present invention and do not constitute an improper limitation to the present invention. In the drawings:

[0021] Figure 1 FIG. shows a schematic connection diagram of a plurality of sub-cells and a plurality of field effect transistors of a perovskite battery module according to an embodiment of the present invention;

[0022] Figure 2 FIG. shows a three-dimensional structure schematic diagram of a perovskite battery module according to an embodiment of the present invention.

[0023] Among them, the above-mentioned drawings include the following reference numerals:

[0024] 100, field effect transistor; 110, sub-cell; 11, substrate; 12, transparent conductive layer; 13, hole transport layer; 14, perovskite layer; 15, electron transport layer; 16, metal electrode layer; 17, insulating dielectric layer; 18, semiconductor layer; 19, diffusion region. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0025] It should be noted that, without conflict, the embodiments in the present invention and the features in the embodiments may be combined with each other. The present invention will be described in detail below with reference to the drawings and in conjunction with the embodiments.

[0026] To enable those skilled in the art to better understand the solution of the present invention, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all of the embodiments. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without creative efforts shall fall within the scope of protection of the present invention.

[0027] It should be noted that the terms "first", "second", etc. in the specification and claims of the present invention and the above-mentioned drawings are used to distinguish similar objects, and do not necessarily need to be used to describe a specific order or sequence. It should be understood that such data can be interchanged under appropriate circumstances so as to implement the embodiments of the present invention described herein. In addition, the terms "comprising" and "having" and any variations thereof are intended to cover non-exclusive inclusion. For example, a process, method, system, product or device that includes a series of steps or units does not necessarily have to be limited to those steps or units clearly listed, but may include other steps or units not clearly listed or inherent to these processes, methods, products or devices.

[0028] As described in the background art, a crystalline silicon solar cell module generally has three bypass diodes in the junction box, which are connected in parallel with the battery string through a bus bar. Each bypass diode provides bypass protection for one-third of the solar cells and is welded to the battery string through the bus bar. In the prior art, due to the thin-film module structure of the perovskite battery module, it is generally designed with only one bypass diode connected in parallel in the junction box, which can only provide bypass protection for the entire module and has limited protection against hot spots for the sub-cells in the module. Based on this, in order to solve the technical problem that the perovskite battery module in the prior art usually only integrates one bypass diode in the junction box due to its thin-film structure, resulting in limited hot spot bypass protection ability for the entire module, especially unable to provide effective hot spot protection for each sub-cell in the module, the present application provides a perovskite battery module and a preparation method thereof.

[0029] In some alternative embodiments, a perovskite battery module is provided. The perovskite battery module includes a perovskite battery and a plurality of field effect transistors; wherein, the perovskite battery includes a plurality of sub-cells connected in series; the gates of the plurality of field effect transistors are electrically connected to the cathodes of the plurality of sub-cells in one-to-one correspondence, and the cathode of each sub-cell is also electrically connected to the source of the corresponding field effect transistor, and the drain of each field effect transistor is electrically connected to the anode of the corresponding sub-cell.

[0030] Exemplarily, such as Figure 1As shown, a plurality of sub-cells 110 include sub-cell 1, sub-cell 2, sub-cell 3, sub-cell 4, sub-cell 5, …, sub-cell n-1, and sub-cell n. A plurality of field effect transistors 100 include field effect transistor 1, field effect transistor 2, field effect transistor 3, field effect transistor 4, field effect transistor 5, …, field effect transistor n-1, and field effect transistor n. The plurality of field effect transistors 100 are staggeredly distributed on opposite sides of the plurality of sub-cells 110, so that when the plurality of sub-cells 110 do not fail, current can flow from the positive electrode of sub-cell 1 through sub-cell 1, sub-cell 2, sub-cell 3, sub-cell 4, sub-cell 5, …, sub-cell n-1, and sub-cell n in sequence, and is led out from the negative electrode of sub-cell n. Exemplarily, when the plurality of sub-cells 110 include sub-cell 1, sub-cell 2, sub-cell 3, sub-cell 4, and sub-cell 5 and the plurality of sub-cells 110 do not fail, current can flow from the positive electrode of sub-cell 1 through sub-cell 1, sub-cell 2, sub-cell 3, sub-cell 4, and sub-cell 5 in sequence, and is led out from the negative electrode of sub-cell 5; when the plurality of sub-cells 110 include sub-cell 1, sub-cell 2, sub-cell 3, sub-cell 4, and sub-cell 5 and sub-cell 1 fails, current can bypass sub-cell 1 from the positive electrode of sub-cell 1, flow through field effect transistor 1, sub-cell 2, sub-cell 3, sub-cell 4, and sub-cell 5 in sequence, and is led out from the negative electrode of sub-cell 5; when the plurality of sub-cells 110 include sub-cell 1, sub-cell 2, sub-cell 3, sub-cell 4, and sub-cell 5 and both sub-cell 1 and sub-cell 2 fail, current can flow from the positive electrode of sub-cell 1, through field effect transistor 1, field effect transistor 2, sub-cell 3, sub-cell 4, and sub-cell 5 in sequence, and is led out from the negative electrode of sub-cell 5.

[0031] In the above embodiment, the gate of each field effect transistor is directly connected to the cathode of a specific sub-cell, the drain is connected to the anode of the sub-cell, and the source is connected to the cathode of the sub-cell, so that each sub-cell has its own bypass protection circuit. Even if a single sub-cell fails or is shaded, the increase in its voltage can directly trigger the corresponding field effect transistor to turn on, thereby forming a new conduction path, enabling the current to bypass the sub-cell and avoiding the generation of the hot spot effect. Therefore, through this application, the technical problem in the prior art that since the thin film type structure usually only integrates a bypass diode in the junction box, the hot spot bypass protection ability of the entire module is limited, especially unable to provide effective hot spot protection for each sub-cell in the module, is solved.

[0032] In some alternative embodiments, for the current sub-cell (faulty sub-cell) with problems, in order to allow the current flowing after the previous sub-cell to bypass the current sub-cell (faulty sub-cell), and by turning on the field effect transistor corresponding to the faulty sub-cell, so that the current continues to flow through other normal sub-cells in the perovskite component through the conductive channel in the field effect transistor, the drain of at least one field effect transistor is also electrically connected to the cathode of the previous sub-cell connected in series with the corresponding sub-cell.

[0033] Exemplarily, in the case where the perovskite battery component includes a first sub-cell and a second sub-cell connected in series, the perovskite battery component further includes a first field effect transistor and a second field effect transistor. Among them, the gate of the first field effect transistor is electrically connected to the cathode of the first sub-cell, the cathode of the first sub-cell is also electrically connected to the source of the corresponding first field effect transistor, and the anode of the first sub-cell is electrically connected to the drain of the corresponding first field effect transistor; the gate of the second field effect transistor is electrically connected to the cathode of the second sub-cell, the cathode of the second sub-cell is also electrically connected to the source of the corresponding second field effect transistor, and the anode of the second sub-cell is electrically connected to the drain of the corresponding second field effect transistor. On this basis, it can be inferred that since the first sub-cell and the second sub-cell are connected in series, therefore, the cathode of the first sub-cell is electrically connected to the anode of the second sub-cell. Thus, when the drain of the second field effect transistor is electrically connected to the anode of the second sub-cell, the drain of the second field effect transistor is also electrically connected to the cathode of the first sub-cell.

[0034] In addition, in order to allow the current to bypass the current sub-cell (faulty sub-cell) with problems, and by turning on the field effect transistor corresponding to the current sub-cell (faulty sub-cell) to form a new conductive channel in the field effect transistor, so that the current flows through the conductive channel in the field effect transistor, thereby bypassing the current sub-cell (faulty sub-cell) and then continuing to flow through other normal sub-cells in the perovskite component. In some alternative embodiments, the source of at least one field effect transistor is electrically connected to the anode of the subsequent sub-cell connected in series with the corresponding sub-cell.

[0035] Exemplarily, for the above-mentioned first sub-cell and the second sub-cell, since the cathode of the first sub-cell is electrically connected to the anode of the second sub-cell, and the cathode of the first sub-cell is also electrically connected to the source of the corresponding first field effect transistor, the source of the first field effect transistor is electrically connected to the anode of the second sub-cell.

[0036] In some alternative embodiments, in order to make the manufacturing process of the field effect transistor compatible with the manufacturing process of the perovskite battery, the field effect transistor is an amorphous silicon field effect transistor.

[0037] In some alternative embodiments, such as Figure 2As shown, the perovskite battery component provided by the present application may include: a substrate 11, a transparent conductive layer 12, a functional layer, and a metal electrode layer 16 stacked in a direction away from the substrate 11. The transparent conductive layer 12 includes a first transparent conductive electrode and a second transparent conductive electrode spaced apart in a first direction. The functional layer includes a first perovskite unit and a first protection unit spaced apart in a second direction. The first perovskite unit and the first protection unit are respectively stacked with the first transparent conductive electrode. The second direction and the first direction are perpendicular in the same plane, and the first direction is parallel to the transparent conductive layer 12. The metal electrode layer 16 includes a first metal electrode on the first perovskite unit and a second metal electrode on the first protection unit. The second metal electrode includes a first metal portion, and a second metal portion and a third metal portion spaced apart on opposite sides of the first metal portion in the first direction. The first metal electrode is in contact with the first metal portion, and the third metal portion is in contact with the second transparent conductive electrode. A first connection portion and a second connection portion, wherein the first connection portion extends from one end of the second metal portion to the first transparent conductive electrode, and the second connection portion extends from one end of the first metal electrode to the second transparent conductive electrode, and the second connection portion penetrates the first perovskite unit.

[0038] Specifically, both the first connection portion and the second connection portion are conductive connection portions.

[0039] Specifically, the first perovskite unit and the first protection unit are respectively in contact with the first transparent conductive electrode, the second transparent conductive electrode is spaced apart from the first protection unit, the first metal electrode is in contact with the first perovskite unit, and the second metal electrode is in contact with the first protection unit. Based on this, the first transparent conductive electrode, the first perovskite unit, and the first metal electrode stacked and in contact in a direction away from the substrate may constitute a sub-battery in the perovskite battery component; the first transparent conductive electrode, the first protection unit, and the second metal electrode stacked and in contact in a direction away from the substrate may constitute a field effect transistor in the perovskite battery component.

[0040] Specifically, as Figure 2 shown, the first perovskite unit includes a hole transport layer 13, a perovskite layer 14, and an electron transport layer 15 stacked. The first protection unit includes a semiconductor layer 18 and two diffusion regions 19 extending from the surface of the semiconductor layer 18 on the side away from the transparent conductive layer 12 into the semiconductor layer 18.

[0041] Exemplarily, as Figure 2As shown, the second transparent conductive electrode and the first protection unit are spaced apart by an insulating dielectric layer 17. More specifically, the insulating dielectric layer 17 includes a first insulating portion, and a second insulating portion and a third insulating portion that are respectively in contact with the first insulating portion; wherein, the first insulating portion is located between the first perovskite unit and the first protection unit in the second direction to achieve electrical independence between the first perovskite unit and the first protection unit; the second insulating portion and the third insulating portion are respectively located between the first protection unit and the transparent conductive layer 12, and the second insulating portion and the third insulating portion are spaced apart along the first direction on the first transparent conductive electrode. It can be understood here that the first protection unit is in contact with the first transparent conductive electrode through the gap between the second insulating portion and the third insulating portion, the first protection unit is electrically insulated from other transparent conductive electrodes on the side of the first transparent conductive electrode away from the second transparent conductive electrode through the second insulating portion, and the first protection unit is electrically insulated from the second transparent conductive electrode through the third insulating portion.

[0042] In some alternative embodiments, at least one sub-cell includes a first transparent conductive electrode, a first perovskite unit, and a first metal electrode that are stacked in a direction away from the substrate; at least one field effect transistor includes a transparent conductive layer, a first protection unit, and a second metal electrode that are stacked in a direction away from the substrate, the transparent conductive layer includes a first transparent conductive electrode and a second transparent conductive electrode, and the first metal portion constitutes the gate of the field effect transistor, the second metal portion constitutes the drain of the field effect transistor, and the third metal portion constitutes the source of the field effect transistor.

[0043] In addition, the first transparent conductive electrode corresponds to the anode of the sub-cell, and the first metal electrode corresponds to the cathode of the sub-cell.

[0044] Based on this, "the first metal portion is in contact with the first metal electrode" corresponds to "the gates of multiple field effect transistors are electrically connected to the cathodes of multiple sub-cells one by one", "the first connection portion extends from one end of the second metal portion to the first transparent conductive electrode" corresponds to "the drain of each field effect transistor is electrically connected to the anode of the corresponding sub-cell", and "the third metal portion is in contact with the second transparent conductive electrode, and the second connection portion extends from one end of the first metal electrode to the second transparent conductive electrode" corresponds to "the cathode of each sub-cell is also electrically connected to the source of the corresponding field effect transistor".

[0045] It can be seen that the design of the above embodiments forms a bypass circuit at the sub-cell level without affecting the normal operation of other sub-cells in the perovskite battery module, and avoids the phenomenon that the entire battery string in the traditional module may stop working due to a problem in one unit.

[0046] For example, the sub-cell composed of the above-mentioned first transparent conductive electrode, the above-mentioned first perovskite unit, and the above-mentioned first metal electrode is denoted as the first sub-cell, and the field effect transistor composed of the above-mentioned first transparent conductive electrode, the above-mentioned first protection unit, and the above-mentioned second metal electrode is denoted as the first field effect transistor. It should be noted that the first protection unit corresponding to the first field effect transistor is arranged at an interval from the second transparent conductive electrode. However, when the first field effect transistor is turned on, since the third metal part of the first field effect transistor is in contact with the second transparent conductive electrode, the first field effect transistor is electrically connected to the second transparent conductive electrode through the third metal part. On this basis, when the first sub-cell has a hot spot effect, the first field effect transistor will be turned on. At this time, there is a conductive channel between the source and the drain of the first field effect transistor, so the current will bypass the first sub-cell and flow through the first field effect transistor. Moreover, by arranging the third metal part of the first field effect transistor in contact with the second transparent conductive electrode, the current can be collected by the second transparent conductive electrode through the third metal part after flowing through the first field effect transistor.

[0047] It can be understood that in the above-mentioned embodiment, the first connecting part extends from the second metal part to the first transparent conductive electrode, and the second connecting part extends from the first metal electrode to the second transparent conductive electrode, and the second connecting part particularly penetrates the first perovskite unit. This means that when the first perovskite unit does not fail, the current can flow through the second connecting part to the adjacent second transparent conductive electrode to be collected by the second transparent conductive electrode.

[0048] In some alternative embodiments, the functional area further includes a second perovskite unit and a second protection unit arranged at intervals along the second direction. The second perovskite unit and the second protection unit are respectively stacked with the second transparent conductive electrode; the transparent conductive layer further includes a third transparent conductive electrode located on the side of the second transparent conductive electrode away from the first transparent conductive electrode and arranged at an interval from the second transparent conductive electrode. The metal electrode layer further includes a third metal electrode on the second perovskite unit and a fourth metal electrode on the second protection unit. The fourth metal electrode includes a fourth metal part, and a fifth metal part and a sixth metal part arranged at intervals on opposite sides of the fourth metal part in the first direction. The third metal electrode is in contact with the fourth metal part, the fifth metal part is in contact with the first metal electrode, and the sixth metal part is in contact with the third transparent conductive electrode; the perovskite battery assembly further includes a third connecting part, and the third connecting part extends from one end of the third metal electrode to the third transparent conductive electrode and penetrates the second perovskite unit.

[0049] Specifically, the third conductive part is a conductive connecting part.

[0050] Optionally, the perovskite battery assembly includes a perovskite battery and a plurality of field effect transistors, and the perovskite battery includes a plurality of sub-cells connected in series. In order to provide a field effect transistor for each sub-cell without adding additional equipment, the plurality of field effect transistors in the perovskite battery assembly can be staggered on opposite sides of the plurality of sub-cells. That is, the first perovskite unit and the second perovskite unit have opposite first and second sides in the second direction, the first protection unit is located on the first side, and the second protection unit is located on the second side. In other words, the second protection unit is located on the side of the first perovskite unit and the second perovskite unit away from the first protection unit.

[0051] Specifically, as Figure 2 shown, the second perovskite unit includes a hole transport layer 13, a perovskite layer 14, and an electron transport layer 15 stacked on top of each other. The second protection unit includes a semiconductor layer 18 and two diffusion regions 19 extending from the surface of the semiconductor layer 18 facing away from the transparent conductive layer 12 into the semiconductor layer 18.

[0052] Specifically, as Figure 2 shown, the second protection unit and the second perovskite unit are respectively in contact with the second transparent conductive electrode, and the first transparent conductive electrode and the third transparent conductive electrode are respectively spaced from the second protection unit. Exemplarily, the first transparent conductive electrode and the second protection unit, and the third transparent conductive electrode and the second protection unit are respectively spaced by an insulating dielectric layer 17. More specifically, the insulating dielectric layer 17 includes a fourth insulating portion, and a fifth insulating portion and a sixth insulating portion respectively in contact with the fourth insulating portion; wherein, the fourth insulating portion is located between the second perovskite unit and the second protection unit in the second direction to achieve electrical independence between the second perovskite unit and the second protection unit; the fifth insulating portion and the sixth insulating portion are respectively located between the second protection unit and the transparent conductive layer 12, and the fifth insulating portion and the sixth insulating portion are spaced apart on the second transparent conductive electrode in the first direction. It can be understood here that the second protection unit is in contact with the second transparent conductive electrode through the gap between the fifth insulating portion and the sixth insulating portion, the second protection unit is electrically insulated from the first transparent conductive electrode through the fifth insulating portion, and the second protection unit is electrically insulated from the third transparent conductive electrode through the sixth insulating portion. The first insulating portion and the fourth insulating portion are in contact with each other in the first direction, and the second insulating portion, the third insulating portion, the fifth insulating portion, and the sixth insulating portion are spaced apart in the first direction.

[0053] In the above embodiment, the second transparent conductive electrode, the second perovskite unit, and the third metal electrode sequentially stacked and in contact with each other in the direction away from the substrate can form a sub-cell in the perovskite battery assembly; the second transparent conductive electrode, the second protection unit, and the fourth metal electrode sequentially stacked and in contact with each other in the direction away from the substrate can form a field effect transistor in the perovskite battery assembly.

[0054] In some alternative embodiments, at least one sub-cell includes a second transparent conductive electrode, a second perovskite unit, and a third metal electrode stacked in a direction away from the substrate; at least one field effect transistor includes a transparent conductive layer, a second protection unit, and a fourth metal electrode stacked in a direction away from the substrate. The transparent conductive layer further includes a third transparent conductive electrode, and the fourth metal portion forms the gate of the field effect transistor, the fifth metal portion forms the drain of the field effect transistor, and the sixth metal portion forms the source of the field effect transistor.

[0055] In addition, the third metal electrode correspondingly serves as the cathode of the sub-cell. It should be noted here that the third metal electrode is spaced apart from the first metal electrode described above.

[0056] Based on this, "the third metal electrode is in contact with the fourth metal portion" corresponds to "the gates of multiple field effect transistors are electrically connected to the cathodes of multiple sub-cells one by one", "the second connecting portion extends from one end of the first metal electrode to the second transparent conductive electrode, and the fifth metal portion is in contact with the first metal electrode" corresponds to "the drain of each field effect transistor is electrically connected to the anode of the corresponding sub-cell", and "the third connecting portion extends from one end of the third metal electrode to the third transparent conductive electrode, and the sixth metal portion is in contact with the third transparent conductive electrode" corresponds to "the cathode of each sub-cell is further electrically connected to the source of the corresponding field effect transistor".

[0057] In summary, the above-mentioned second transparent conductive electrode, the above-mentioned second perovskite unit, and the above-mentioned third metal electrode can form a sub-cell, denoted as the second sub-cell; the above-mentioned second transparent conductive electrode, the above-mentioned second protection unit, and the above-mentioned fourth metal electrode can form a field effect transistor, denoted as the second field effect transistor. Similarly, although the second protection unit is spaced apart from the third transparent conductive electrode, when the second field effect transistor is turned on, since the sixth metal portion of the second field effect transistor is in contact with the third transparent conductive electrode, the second field effect transistor is electrically connected to the third transparent conductive electrode through the sixth metal portion. Thus, when a hot spot effect occurs in the second sub-cell, the second field effect transistor will be turned on. At this time, there is a conductive channel between the source and the drain of the second field effect transistor, so that the current will bypass the second sub-cell and flow through the second field effect transistor. Moreover, by arranging the sixth metal portion of the second field effect transistor in contact with the third transparent conductive electrode, the current can be collected by the third transparent conductive electrode after flowing through the second field effect transistor and passing through the sixth metal portion.

[0058] In addition, it can be understood that when no hot spot effect occurs in the second sub-cell, the current collected by the second transparent conductive electrode will flow through the third metal electrode and the third connecting portion of the second sub-cell to the third transparent conductive electrode after flowing through the second sub-cell, so as to be collected by the third transparent conductive electrode.

[0059] It is mentioned here that the above-mentioned first sub-cell and the above-mentioned second sub-cell can be two sub-cells connected in series in the perovskite battery module. Based on the bypass protection effects of the above-mentioned first field-effect transistor and second field-effect transistor, when the first sub-cell has a hot-spot effect, the first field-effect transistor is turned on, and the current collected by the first transparent conductive electrode will bypass the first sub-cell and flow through the first field-effect transistor to the second transparent conductive electrode of the second sub-cell to be collected by the second transparent conductive electrode. Then, when the second sub-cell has a hot-spot effect, the second field-effect transistor is turned on, and the current collected by the second transparent conductive electrode will bypass the second sub-cell and flow through the second field-effect transistor to the third transparent conductive electrode to be collected by the third transparent conductive electrode.

[0060] In the above embodiment, the perovskite battery module can achieve independent hot-spot bypass protection for multiple sub-cells in the perovskite battery module by arranging multiple perovskite units and corresponding protection units in the functional layer, and introducing additional transparent conductive electrodes and metal electrodes in the transparent conductive layer and the metal electrode layer. Through the settings of the first connection part, the second connection part and the third connection part, the series connection of multiple sub-cells in the perovskite battery module is realized. By providing a corresponding field-effect transistor for each sub-cell, an electrical path for quickly responding to local shading or faults is provided for the perovskite battery module, thereby significantly improving the stability and overall performance of the perovskite battery module in the face of hot-spot effects. This helps to prevent local overheating and can also maintain the high efficiency of the module. Even when some sub-cells are damaged, it can ensure the normal operation of other sub-cells, avoiding the limitation that a single bypass diode in a traditional perovskite battery module cannot effectively cope with the sub-cell-level hot-spot effect.

[0061] In some alternative embodiments, such as Figure 2As shown, the applicant also provides a method for preparing a perovskite battery component as described in any one of the above. The preparation method includes: forming a transparent conductive layer 12 on a substrate 11, the transparent conductive layer 12 including a first transparent conductive electrode and a second transparent conductive electrode spaced apart along a first direction A, the first direction A being parallel to the transparent conductive layer 12; forming a functional layer on a side of the first transparent conductive electrode facing away from the substrate 11, the functional layer including a first perovskite unit and a first protection unit spaced apart along a second direction B, such that the first perovskite unit and the first protection unit are respectively stacked with the first transparent conductive electrode, the first direction A and the second direction B being perpendicular in the same plane; forming a first connection portion and a second connection portion on a side of the transparent conductive layer 12 facing away from the substrate 11, and forming a metal electrode layer 16 on a side of the functional layer facing away from the transparent conductive layer 12, the metal electrode layer 16 including a first metal electrode on the first perovskite unit and a second metal electrode on the first protection unit, the second metal electrode including a first metal portion and second and third metal portions spaced apart on opposite sides of the first metal portion in the first direction A, the first metal electrode being in contact with the first metal portion, the third metal portion being in contact with the second transparent conductive electrode, and the first connection portion extending from one end of the second metal portion to the first transparent conductive electrode, the second connection portion extending from one end of the first metal electrode to the second transparent conductive electrode, and the second connection portion passing through the first perovskite unit.

[0062] Specifically, after forming the transparent conductive layer, the above transparent conductive layer can be subjected to a first laser scribing to divide the transparent conductive layer into a plurality of transparent conductive electrodes spaced apart along the first direction A, the plurality of transparent conductive electrodes including the above first transparent conductive electrode and second transparent conductive electrode. Exemplarily, the material of the above transparent conductive layer is fluorine-doped tin dioxide.

[0063] Specifically, the surface of the transparent conductive layer facing away from the substrate includes a spaced region and a perovskite region and a bypass protection region located on opposite sides of the spaced region along the second direction B.

[0064] After the step of forming the above plurality of transparent conductive electrodes, the perovskite region can be masked, and then an insulating dielectric material layer can be deposited on the spaced region and the bypass protection region, and the insulating dielectric material layer can be annealed. Optionally, the material of the insulating dielectric material layer is a-SiN x:H, with a thickness of about 700 nm. Next, the insulating dielectric material layer on the above bypass protection area is laser-etched to thin the insulating dielectric material layer. Optionally, the thickness of the insulating dielectric material layer at this time is about 300 nm. It should be noted that the insulating dielectric material layer in the spacer area is not etched and thinned. After that, the insulating dielectric material layer on the bypass protection area is etched again to etch a channel through the insulating dielectric material layer to the transparent conductive layer in the insulating dielectric material layer on the bypass protection area, and the remaining insulating dielectric material layer constitutes the insulating dielectric layer of the perovskite battery module.

[0065] Specifically, as Figure 2 shown, the insulating dielectric layer 17 is located in the spacer area and the bypass protection area, and the insulating dielectric layer 17 may include a first insulating part, a second insulating part, and a third insulating part that are respectively in contact with the first insulating part. Among them, the first insulating part is located in the spacer area between the perovskite area and the bypass protection area in the second direction B, so that the first insulating part realizes the isolation between the first protection unit and the first perovskite unit; the second insulating part and the third insulating part are respectively located on the bypass protection area, and the second insulating part and the third insulating part are spaced apart along the first direction A on the first transparent conductive electrode, so that the third insulating part realizes the isolation between the first protection unit and the second transparent conductive electrode, and the second insulating part realizes the isolation between the first protection unit and the transparent conductive electrode on the side of the first transparent conductive electrode away from the second transparent conductive electrode.

[0066] Furthermore, the step of forming the functional layer on the side of the first transparent conductive electrode facing away from the substrate is after forming the above insulating dielectric layer.

[0067] Optionally, the step of forming the functional layer includes: covering the perovskite area with a mask structure, and then forming a first protection unit on the side of the transparent conductive layer facing away from the substrate; then removing the mask structure and forming a first perovskite unit on the side of the transparent conductive layer facing away from the substrate.

[0068] Exemplarily, as Figure 2 shown, in the step of forming the first protection unit, first deposit a semiconductor material layer on the bypass protection area. Among them, the thickness of the semiconductor material layer is about 200 nm, and the material is a-Si:H. Next, etch the semiconductor material layer to the transparent conductive layer 12 to form a plurality of semiconductor layers 18 spaced apart along the first direction A. Furthermore, etch each semiconductor layer 18 to form two deposition areas to be deposited spaced apart along the first direction A on the surface of each semiconductor layer 18 away from the transparent conductive layer 12. Among them, the depth of the deposition area to be deposited is about 50 nm. After that, deposit and form a diffusion region 19 in the above two deposition areas to be deposited. Among them, the diffusion region 19 is formed by depositing n +Si:H formation. Among them, the thickness of the diffusion region 19 is not less than 50 nm. After that, the n + Si:H material other than the area to be deposited is etched away by laser etching, and the semiconductor layer 18 deposited with n + Si:H is subjected to a low-temperature annealing treatment to form a plurality of protection units, and the plurality of protection units include the above-mentioned first protection unit.

[0069] Exemplarily, in the steps of forming the first perovskite unit, the first metal electrode, and the second metal electrode:

[0070] First, a hole transport material layer is deposited and annealed on the perovskite region, the spacer region, and the bypass protection region. Among them, the hole transport material layer can be deposited by magnetron sputtering; the material of the hole transport material layer is nickel oxide.

[0071] Next, a source region, a gate region, a drain region, and an interconnection region between the source region and the transparent conductive electrode are etched out on the bypass protection region, so that the remaining hole transport material layer includes the hole transport layer 13 located in the perovskite region (as Figure 2 shown) and the gate oxide layer located in the spacer region and the bypass protection region.

[0072] After that, a perovskite material layer is deposited on the side of the hole transport layer facing away from the transparent conductive layer. Among them, the thickness of the perovskite material layer is 600 nm.

[0073] After that, an electron transport material layer is deposited on the side of the perovskite material layer facing away from the hole transport layer. Among them, the electron transport material layer is deposited by vacuum evaporation; the thickness of the electron transport material layer is 50 nm, and the material is C 60 .

[0074] Then, a second laser scribing is performed on the electron transport material layer to obtain a plurality of connection channels, and each connection channel penetrates through the electron transport material layer, the perovskite material layer, and the hole transport layer located on one of the transparent conductive electrodes to the other transparent conductive electrode adjacent to the transparent conductive electrode.

[0075] Then, the electron transport material layer and the perovskite material layer on the bypass protection region are cleaned by laser etching, so that the remaining electron transport material layer is located in the perovskite region and forms the electron transport layer 15, and the remaining perovskite material layer is located in the perovskite region and forms the perovskite layer 14, as Figure 2 shown.

[0076] Next, as Figure 2As shown, a metal electrode layer 16 is deposited on the side of the electron transport layer 15 away from the perovskite layer 14. The metal electrode layer 16 is deposited by vacuum evaporation; the material of the metal electrode layer 16 is copper, and the thickness is 200nm. In this step, the metal material of the metal electrode also fills the above-mentioned connection channel to form a plurality of connection parts corresponding to the plurality of connection channels. The plurality of connection parts include the first connection part and the second connection part.

[0077] Afterwards, if Figure 2 As shown, the metal electrode layer 16 is laser scribed for the third time in the perovskite region by a laser etching method to separate the metal electrode layer 16, the electron transport layer 15, the perovskite layer 14 and the hole transport layer 13, forming a plurality of sub-batteries spaced apart along the first direction A and connected in series through a connection channel filled with metal, and after the metal electrode layer 16 is patterned in the bypass protection region to form a gate corresponding to the gate region, a drain corresponding to the above-mentioned drain region, and a source corresponding to the above-mentioned source region and the interconnection region, a plurality of field effect transistors spaced apart along the first direction A are formed.

[0078] Among them, the multiple sub-batteries correspond to the multiple perovskite units one by one, and the multiple perovskite units include the above-mentioned first perovskite unit. The multiple sub-batteries have multiple metal electrodes corresponding to each other, and the multiple metal electrodes include the above-mentioned first metal electrode. The multiple field effect transistors have multiple metal electrodes corresponding to each other, and the multiple metal electrodes include the above-mentioned second metal electrode, and the first metal part of the above-mentioned second metal electrode corresponds to the gate of the field effect transistor, the second metal part of the second metal electrode corresponds to the drain of the field effect transistor, and the third metal part of the second metal electrode corresponds to the source of the field effect transistor.

[0079] Finally, after laser edge cleaning treatment of the above materials, a perovskite battery component is obtained.

[0080] From the above description, it can be seen that the above embodiments of the present invention achieve the following technical effects:

[0081] Applying the technical solution of the present invention, a perovskite battery module includes a perovskite battery and a plurality of field effect transistors. Among them, the perovskite battery includes a plurality of sub-cells connected in series. The gates of the plurality of field effect transistors are electrically connected to the cathodes of the plurality of sub-cells in one-to-one correspondence, and the cathode of each sub-cell is also electrically connected to the source of the corresponding field effect transistor. The drain of each field effect transistor is electrically connected to the anode of the corresponding sub-cell. Therefore, each field effect transistor is connected in parallel with the corresponding sub-cell, so that each sub-cell has its own bypass protection circuit. Even if a single sub-cell fails or is shaded, the increase in its voltage can directly trigger the corresponding field effect transistor to turn on, thereby bypassing the sub-cell and avoiding the generation of hot spot effect. That is, through this application, the technical problem in the prior art that due to the thin film type structure usually only integrating one bypass diode in the junction box, the hot spot bypass protection ability of the whole module is limited, especially unable to provide effective hot spot protection for each sub-cell in the module is solved.

[0082] The above are only the preferred embodiments of the present invention and are not intended to limit the present invention. For those skilled in the art, the present invention can have various changes and modifications. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention shall be included within the protection scope of the present invention.

Claims

1. A perovskite battery assembly, characterized in that: It includes a perovskite battery and a plurality of field effect transistors; wherein the perovskite battery includes a plurality of sub-batteries connected in series; The gates of the multiple field effect tubes are electrically connected to the cathodes of the multiple sub-batteries one by one, and the cathode of each sub-battery is also electrically connected to the source of the corresponding field effect tube, and the drain of each field effect tube is electrically connected to the anode of the corresponding sub-battery.

2. The perovskite battery assembly according to claim 1, characterized in that: The drain of at least one of the field effect transistors is also electrically connected to the cathode of the previous sub-battery connected in series with the corresponding sub-battery.

3. The perovskite battery assembly according to claim 1, characterized in that: The source electrode of at least one of the field effect transistors is electrically connected to the anode electrode of the subsequent sub-battery that is connected in series with the corresponding sub-battery.

4. The perovskite battery assembly according to any one of claims 1 to 3, characterized in that: The field effect tube is an amorphous silicon field effect tube.

5. A perovskite battery assembly according to any one of claims 1 to 4, characterized in that: The perovskite battery assembly comprises: A substrate and a transparent conductive layer, a functional layer and a metal electrode layer stacked in a direction away from the substrate, the transparent conductive layer comprising a first transparent conductive electrode and a second transparent conductive electrode spaced apart in a first direction, the functional layer comprising a first perovskite unit and a first protective unit spaced apart in a second direction, the first perovskite unit and the first protective unit are stacked with the first transparent conductive electrode respectively, the second direction and the first direction are perpendicular in the same plane, and the first direction is parallel to the transparent conductive layer; The metal electrode layer includes a first metal electrode located on the first perovskite unit and a second metal electrode located on the first protection unit, the second metal electrode includes a first metal portion and a second metal portion and a third metal portion spaced apart at opposite sides of the first metal portion in the first direction, the first metal electrode is arranged in contact with the first metal portion, and the third metal portion is arranged in contact with the second transparent conductive electrode; A first connecting portion and a second connecting portion, wherein the first connecting portion extends from one end of the second metal portion to the first transparent conductive electrode, the second connecting portion extends from one end of the first metal electrode to the second transparent conductive electrode, and the second connecting portion passes through the first perovskite unit.

6. The perovskite battery assembly according to claim 5, characterized in that: The functional area further includes a second perovskite unit and a second protection unit spaced apart along the second direction, and the second perovskite unit and the second protection unit are respectively stacked with the second transparent conductive electrode; The transparent conductive layer further includes a third transparent conductive electrode located at a side of the second transparent conductive electrode away from the first transparent conductive electrode and spaced apart from the second transparent conductive electrode, the metal electrode layer further includes a third metal electrode located on the second perovskite unit and a fourth metal electrode located on the second protection unit, the fourth metal electrode includes a fourth metal portion and a fifth metal portion and a sixth metal portion spaced apart at two opposite sides of the fourth metal portion in the first direction, the third metal electrode is arranged in contact with the fourth metal portion, the fifth metal portion is arranged in contact with the first metal electrode, and the sixth metal portion is arranged in contact with the third transparent conductive electrode; The perovskite cell assembly further includes a third connecting portion, and the third connecting portion extends from one end of the third metal electrode to the third transparent conductive electrode, and the third connecting portion passes through the second perovskite unit.

7. The perovskite battery assembly according to claim 6, characterized in that: The first perovskite unit and the second perovskite unit have a first side and a second side opposite to each other in the second direction, the first protection unit is located on the first side, and the second protection unit is located on the second side.

8. The perovskite battery assembly according to claim 6, characterized in that: At least one of the subcells comprises the second transparent conductive electrode, the second perovskite unit and the third metal electrode stacked in a direction away from the substrate; At least one of the field effect transistors includes the transparent conductive layer, the second protection unit and the fourth metal electrode stacked in a direction away from the substrate, and the fourth metal part constitutes the gate of the field effect transistor, the fifth metal part constitutes the drain of the field effect transistor, and the sixth metal part constitutes the source of the field effect transistor.

9. The perovskite battery assembly according to any one of claims 5 to 8, characterized in that: The perovskite battery assembly also includes: The insulating dielectric layer includes a first insulating portion and a second insulating portion and a third insulating portion respectively arranged in contact with the first insulating portion; wherein, The first insulating portion is located between the first perovskite unit and the first protection unit in the second direction; The second insulating portion and the third insulating portion are respectively located between the first protection unit and the transparent conductive layer, and the second insulating portion and the third insulating portion are spaced apart on the first transparent conductive electrode along the first direction.

10. The perovskite battery assembly according to any one of claims 5 to 8, characterized in that: At least one of the subcells includes the first transparent conductive electrode, the first perovskite unit, and the first metal electrode stacked in a direction away from the substrate; At least one of the field effect transistors includes the transparent conductive layer, the first protection unit and the second metal electrode stacked in a direction away from the substrate, the transparent conductive layer includes the first transparent conductive electrode and the second transparent conductive electrode, and the first metal part constitutes the gate of the field effect transistor, the second metal part constitutes the drain of the field effect transistor, and the third metal part constitutes the source of the field effect transistor.

11. A method for preparing a perovskite battery assembly as claimed in any one of claims 5 to 10, characterized in that: The preparation method comprises: forming a transparent conductive layer on a substrate, wherein the transparent conductive layer comprises a first transparent conductive electrode and a second transparent conductive electrode spaced apart along a first direction, wherein the first direction is parallel to the transparent conductive layer; forming a functional layer on a side of the first transparent conductive electrode facing away from the substrate, the functional layer comprising a first perovskite unit and a first protection unit spaced apart along a second direction, so that the first perovskite unit and the first protection unit are respectively stacked with the first transparent conductive electrode, and the first direction and the second direction are perpendicular in the same plane; A first connecting portion and a second connecting portion are formed on a side of the transparent conductive layer away from the substrate, and a metal electrode layer is formed on a side of the functional layer away from the transparent conductive layer, the metal electrode layer includes a first metal electrode located on the first perovskite unit and a second metal electrode located on the first protection unit, the second metal electrode includes a first metal portion and a second metal portion and a third metal portion spaced apart on opposite sides of the first metal portion in the first direction, the first metal electrode is arranged in contact with the first metal portion, the third metal portion is arranged in contact with the second transparent conductive electrode, the first connecting portion extends from one end of the second metal portion to the first transparent conductive electrode, the second connecting portion extends from one end of the first metal electrode to the second transparent conductive electrode, and the second connecting portion runs through the first perovskite unit.

12. The preparation method according to claim 11, characterized in that: The surface of the transparent conductive layer on one side facing away from the substrate includes a spacing region and a perovskite region and a bypass protection region located on opposite sides of the spacing region along the second direction. Before the step of forming the functional layer, the preparation method further includes: An insulating dielectric layer is formed on the spacing region and the bypass protection region, wherein the insulating dielectric layer includes a first insulating portion and a second insulating portion and a third insulating portion respectively disposed in contact with the first insulating portion; wherein, The first insulating portion is located between the perovskite region and the bypass protection region in the second direction; The second insulating portion and the third insulating portion are respectively located on the bypass protection region, and the second insulating portion and the third insulating portion are spaced apart on the first transparent conductive electrode along the first direction.

13. The preparation method according to claim 12, characterized in that: The steps of forming the functional layer include: After covering the perovskite region with a mask structure, forming the first protection unit on a side of the transparent conductive layer away from the substrate; The mask structure is removed, and the first perovskite unit is formed on a side of the transparent conductive layer facing away from the substrate.

Images