Perovskite solar cell module based on insulation layer protection and packaging process optimization method thereof

Abstract

The invention discloses a perovskite solar cell module based on insulation layer protection and a packaging process optimization method thereof, through adding an insulation protection layer on the surface of a metal electrode layer and combining a specific deposition process and a packaging process, the risk of short circuit is effectively avoided, and the stability of the cell module is improved at the same time. The perovskite solar cell module sequentially comprises a glass substrate, a transparent conductive oxide layer, a first functional layer, a perovskite layer, a second functional layer, a metal electrode layer, an insulating layer, an adhesive film and a packaging cover plate from bottom to top, and efficient packaging is realized by optimizing laser scribing and insulating layer deposition processes. According to the invention, the long-term stability and the electrical performance of the perovskite assembly are obviously improved, and the perovskite assembly has a wide application prospect.

Description

Technical Field

[0001] This invention relates to the field of solar cell technology, and in particular to perovskite solar cell modules based on insulating layer protection and methods for optimizing their encapsulation process. Background Art

[0002] With the continued growth of global energy demand, the development and utilization of solar energy as a clean and renewable energy source has attracted much attention. Perovskite solar cells have become a research hotspot in the photovoltaic field due to their rapid improvement in photoelectric conversion efficiency (from an initial 4% to over 27%) and large-scale production potential. However, perovskite materials are extremely sensitive to water vapor, oxygen, ultraviolet light, and high temperatures, requiring strict hermetic encapsulation to ensure their long-term stability. In existing encapsulation technologies, the thermal stress during lamination can cause the flexible metal electrode to contact the bottom electrode through gaps created by laser scribing, leading to a short circuit and significantly reducing module performance. This problem has become a key bottleneck restricting the practical application of perovskite solar cell modules. Summary of the Invention

[0003] To address the technical problems existing in the background art, this invention proposes a perovskite solar cell module based on insulating layer protection and an optimized method for its encapsulation process.

[0004] This invention proposes a perovskite solar cell module based on insulating layer protection, comprising, vertically arranged from bottom to top, a glass substrate, a TCO layer, a first functional layer, a perovskite layer, a second functional layer, a metal electrode layer, an insulating layer, an encapsulant film, and an encapsulation cover. The TCO layer is divided into multiple mutually insulating strip electrodes by P1 laser scribing, generating multiple parallel P1 isolation channels, with the depth of a single P1 laser scribing line equal to the thickness of the TCO layer. After sequentially depositing the first functional layer, the perovskite layer, and the second functional layer on the TCO layer, P2 laser scribing is performed. A P2 isolation channel is generated with a depth equal to the sum of the thicknesses of the first functional layer, the perovskite layer, and the second functional layer, exposing the surface of the TCO layer. A metal electrode layer is deposited on the second functional layer, and a P3 laser scribing is performed based on the location of the P2 isolation channel, with a scribing depth equal to the sum of the thicknesses of the first functional layer, the perovskite layer, the second functional layer, and the metal electrode layer, generating a P3 interconnect channel that extends to the TCO layer. An insulating layer is deposited on the surface of the metal electrode layer to cover the sidewalls of the P1 isolation channel, the P2 isolation channel, and the P3 interconnect channel. An encapsulating film and a cover plate are sequentially stacked on the insulating layer and laminated to form a sealed assembly.

[0005] Preferably, the insulating layer is formed on the metal electrode layer, and satisfies the following condition: the thickness of the insulating layer is 5 nanometers or more.

[0006] Preferably, the material of the insulating layer is selected from at least one of Al2O3 and SiO2; the thickness of the insulating layer is 5-30 nm.

[0007] Preferably, the system further includes a drainage strip, which is laid on the metal electrode layer or the TCO layer, and the insulating layer is deposited after the drainage strip is laid.

[0008] The proposed method for optimizing the encapsulation process of perovskite solar cells based on insulating layer protection includes: S1: Perform P1 laser scribing on the TCO layer on the glass substrate, with the scribing depth being the thickness of the TCO layer; S2: Sequentially deposit a first functional layer, a perovskite layer, and a second functional layer on the TCO layer, and perform P2 laser scribing near the P1 laser scribing point, with the scribing depth being the sum of the thicknesses of the first functional layer, the perovskite layer, and the second functional layer. S3: Deposit a metal electrode layer on the second functional layer, and perform P3 laser scribing at a location close to the P2 laser scribing and far from the P1 laser scribing, with the scribing depth being the sum of the thicknesses of the first functional layer, the perovskite layer, the second functional layer, and the metal electrode layer; perform P4 laser edge cleaning on both sides of the battery, with the edge cleaning depth being the sum of the thicknesses of the first functional layer, the perovskite layer, the second functional layer, and the metal electrode layer. S4: Lay out the guide strips according to the battery structure; S5: Deposit an insulating layer on the metal electrode layer and the current-carrying strip. The material of the insulating layer meets the requirements that the deposition process does not damage the perovskite solar cell, has high chemical stability and insulation, and has a thickness of more than 5 nanometers. S6: Perform the following operations in sequence: busbar laying, butyl rubber coating, encapsulation film laying, encapsulation cover covering, edge sealing, lamination, and junction box installation.

[0009] Preferably, step S4 specifically includes: When the battery structure is a reverse structure, the negative electrode lead strip is laid on the outermost metal electrode layer closest to P1, and the positive electrode lead strip is laid on the outermost TCO layer closest to P3. When the battery structure is a normal structure, the positive electrode lead strip is laid on the outermost metal electrode layer closest to the P1 isolation channel, and the negative electrode lead strip is laid on the outermost TCO layer closest to the P3 isolation channel.

[0010] Preferably, step S3 further includes a P3.5 laser scribing line perpendicular to the laser scribing lines of P1, P2, and P3, with a scribing depth equal to the sum of the thicknesses of the TCO layer, the first functional layer, the perovskite layer, the second functional layer, and the metal electrode layer, to achieve series-to-parallel connection of sub-cells within the module.

[0011] Preferably, the insulating layer is made of Al2O3 or SiO2 and is deposited using atomic layer deposition or magnetron sputtering.

[0012] Preferably, when using atomic layer deposition (ALD) to deposit Al2O3, trimethylaluminum is used as the aluminum source, ozone as the oxygen source, and high-purity nitrogen as the carrier gas and purge gas. The deposition process includes: setting the chamber temperature to 100-120°C, placing the sample in, and purging the chamber with high-purity nitrogen; introducing trimethylaluminum with a pulse time of 0.8-1.2 s; introducing high-purity nitrogen with a pulse time of 60-90 s; introducing ozone with a pulse time of 15-25 s; introducing high-purity nitrogen with a pulse time of 90-120 s, completing one cycle; and repeating the cycle 50-300 times to obtain an insulating layer with a thickness of 5-30 nm.

[0013] Preferably, in steps S1 to S3, the distance between the laser lines P1, P2, and P3 is ≥0.

[0014] This invention presents a perovskite solar cell module based on insulating layer protection and its optimized encapsulation process. By adding an insulating protective layer to the surface of the metal electrode layer, combined with specific deposition processes and encapsulation procedures, it effectively avoids short-circuit risks and improves the stability of the cell module. The perovskite solar cell module, from bottom to top, comprises a glass substrate, a transparent conductive oxide layer, a first functional layer, a perovskite layer, a second functional layer, a metal electrode layer, an insulating layer, an encapsulating film, and an encapsulation cover. Efficient encapsulation is achieved through optimized laser scribing and insulating layer deposition processes. This invention significantly improves the long-term stability and electrical performance of perovskite modules and has broad application prospects. Attached Figure Description

[0015] Figure 1 This is a side cross-sectional view of a perovskite solar cell module based on insulating layer protection proposed in this invention.

[0016] Legend: 1. Glass substrate; 2. TCO layer; 3. First functional layer; 4. Perovskite layer; 5. Second functional layer; 6. Metal electrode layer; 7. Drain strip; 8. Butyl rubber; 9. Insulating layer; 10. Adhesive film; 11. Encapsulation cover. Detailed Implementation

[0017] Reference Figure 1This invention proposes a perovskite solar cell module based on insulating layer protection, comprising, vertically arranged from bottom to top, a glass substrate, a TCO layer, a first functional layer, a perovskite layer, a second functional layer, a metal electrode layer, an insulating layer, an encapsulant film, and an encapsulation cover. The TCO layer is divided into multiple mutually insulating strip electrodes by P1 laser scribing, generating multiple parallel P1 isolation channels, with the depth of a single P1 laser scribing line equal to the thickness of the TCO layer. After sequentially depositing the first functional layer, the perovskite layer, and the second functional layer on the TCO layer, P2 laser scribing is performed. A P2 isolation channel is generated with a depth equal to the sum of the thicknesses of the first functional layer, the perovskite layer, and the second functional layer, exposing the surface of the TCO layer. A metal electrode layer is deposited on the second functional layer, and a P3 laser scribing is performed based on the location of the P2 isolation channel, with a scribing depth equal to the sum of the thicknesses of the first functional layer, the perovskite layer, the second functional layer, and the metal electrode layer, generating a P3 interconnect channel that extends to the TCO layer. An insulating layer is deposited on the surface of the metal electrode layer to cover the sidewalls of the P1 isolation channel, the P2 isolation channel, and the P3 interconnect channel. An encapsulating film and a cover plate are sequentially stacked on the insulating layer and laminated to form a sealed assembly.

[0018] In this embodiment, the insulating layer is formed on the metal electrode layer and satisfies the following condition: the thickness of the insulating layer is 5 nanometers or more.

[0019] Specifically, the material of the insulating layer is selected from at least one of Al2O3 and SiO2; the thickness of the insulating layer is 5-30 nm.

[0020] In this embodiment, a drainage strip is also included, which is laid on the metal electrode layer or the TCO layer, and an insulating layer is deposited after the drainage strip is laid.

[0021] Reference Figure 1 The present invention proposes an optimized method for perovskite solar cell encapsulation process based on insulating layer protection, comprising: S1: Perform P1 laser scribing on the TCO layer on the glass substrate, with the scribing depth being the thickness of the TCO layer; S2: Sequentially deposit the first functional layer, the perovskite layer, and the second functional layer on the TCO layer, and perform P2 laser scribing near the P1 laser scribing point. The scribing depth is the sum of the thicknesses of the first functional layer, the perovskite layer, and the second functional layer. S3: Deposit a metal electrode layer on the second functional layer, perform P3 laser scribing at a location close to P2 laser scribing and far from P1 laser scribing, with the scribing depth being the sum of the thicknesses of the first functional layer, perovskite layer, second functional layer and metal electrode layer; perform P4 laser edge cleaning on both sides of the battery, with the edge cleaning depth being the sum of the thicknesses of the first functional layer, perovskite layer, second functional layer and metal electrode layer. S4: Lay out the guide strips according to the battery structure; S5: An insulating layer is deposited on the metal electrode layer and the current guide. The material of the insulating layer meets the requirements that the deposition process does not damage the perovskite solar cell, has high chemical stability and insulation, and has a thickness of more than 5 nanometers. S6: Perform the following operations in sequence: busbar laying, butyl rubber coating, encapsulation film laying, encapsulation cover covering, edge sealing, lamination, and junction box installation.

[0022] In this embodiment, step S4 specifically includes: When the battery structure is a reverse structure, the negative electrode lead strip is laid on the outermost metal electrode layer closest to P1, and the positive electrode lead strip is laid on the outermost TCO layer closest to P3. When the battery structure is a normal structure, the positive electrode lead strip is laid on the outermost metal electrode layer closest to the P1 isolation channel, and the negative electrode lead strip is laid on the outermost TCO layer closest to the P3 isolation channel.

[0023] In this embodiment, step S3 also includes a P3.5 laser scribing line perpendicular to the laser scribing lines of P1, P2, and P3. The scribing depth is the sum of the thicknesses of the TCO layer, the first functional layer, the perovskite layer, the second functional layer, and the metal electrode layer, so as to realize the series-to-parallel connection of sub-cells within the component.

[0024] In this embodiment, the insulating layer is made of Al2O3 or SiO2 and is deposited using atomic layer deposition or magnetron sputtering.

[0025] In this embodiment, when using atomic layer deposition of Al2O3, trimethylaluminum is used as the aluminum source, ozone as the oxygen source, and high-purity nitrogen as the carrier gas and purge gas. The deposition process includes: setting the chamber temperature to 100-120°C, placing the sample in, and cleaning the chamber with high-purity nitrogen; introducing trimethylaluminum with a pulse time of 0.8-1.2 s; introducing high-purity nitrogen with a pulse time of 60-90 s; introducing ozone with a pulse time of 15-25 s; introducing high-purity nitrogen with a pulse time of 90-120 s, completing one cycle; and repeating the cycle 50-300 times to obtain an insulating layer with a thickness of 5-30 nm.

[0026] In this embodiment, in steps S1 to S3, the distance between laser lines P1, P2, and P3 is ≥0.

[0027] Example 1: 1) Clean the glass substrate with the TCO layer, and then perform P1 laser scribing. The depth of P1 laser scribing is the thickness of the TCO layer, and the width of P1 laser scribing is 30 micrometers.

[0028] 2) A nickel oxide layer (first functional layer) is deposited by magnetron sputtering, a perovskite layer is deposited by slot coating, a C60 layer is deposited by vacuum evaporation, and then a P2 laser scribing is performed close to the P1 laser scribing. The thickness of the nickel oxide layer is 20 nm, the thickness of the perovskite layer is 500 nm, the thickness of the C60 layer (second functional layer) is 30 nm, the depth of the P2 laser scribing is 550 nm, the width of the P2 laser scribing is 60 μm, and the distance between the P1 laser scribing and the P2 laser scribing is 60 μm.

[0029] 3) A Cu electrode layer was deposited by magnetron sputtering, followed by P3 laser scribing on the side closer to the P2 laser scribing line and further away from the P3 laser scribing line. The Cu electrode layer thickness was 150 nm, the P3 laser scribing depth was 700 nm, the P3 laser scribing width was 60 μm, and the distance between the P2 and P3 laser scribing lines was 60 μm. P4 laser edge cleaning was performed on both sides of the cell, with a cleaning width of 1.5 cm and a cleaning depth of 700 nm.

[0030] 4) The current-carrying strip uses self-adhesive copper strip. The current-carrying strip used as the negative electrode is laid on the outermost metal electrode layer of the battery near P1, and the current-carrying strip used as the positive electrode is laid on the outermost TCO layer of the battery near P3.

[0031] 5) A 10 nm Al₂O₃ layer was deposited using ALD, with TMA as the aluminum source, O₃ as the oxygen source, and high-purity nitrogen as the carrier and purge gas. The chamber temperature was set to 110 °C. The sample was placed into the reaction chamber; the reaction chamber was then purged with high-purity nitrogen; TMA was introduced into the reaction chamber with a pulse duration of 1 s; high-purity nitrogen was introduced with a pulse duration of 75 s; O₃ was introduced with a pulse duration of 20 s; and high-purity nitrogen was introduced with a pulse duration of 100 s, completing one cycle. The number of cycles was set to 140.

[0032] 6) Subsequent encapsulation operations include laying busbars, applying butyl rubber, encapsulating film, covering with encapsulation cover plate, sealing edges, laminating, and installing junction boxes. After the module has cured, the electrical performance of the module is tested.

[0033] Comparative Example: The comparative example does not involve the deposition of an insulating layer, i.e., it does not include step 5 of the example. All other steps are identical to those of the example. Wherein, Pmax is the maximum output power; Isc is the short-circuit current; Voc is the open-circuit voltage; Ipm is the maximum power point current; and Vpm is the maximum power point voltage. FF is the fill factor; the performance comparison between the examples and the comparative examples is shown in the table below:

[0034] The results show that the insulation layer design of the present invention significantly improves the output power and fill factor of the component, verifying the effectiveness of the process.

[0035] The above description is only a preferred embodiment of the present invention, but the scope of protection of the present invention is not limited thereto. Any equivalent substitutions or modifications made by those skilled in the art within the scope of the technology disclosed in the present invention, based on the technical solution and inventive concept of the present invention, should be covered within the scope of protection of the present invention.

Claims

1. A perovskite solar cell module based on insulating layer protection, characterized in that, The structure includes, vertically, a glass substrate, a TCO layer, a first functional layer, a perovskite layer, a second functional layer, a metal electrode layer, an insulating layer, an encapsulating film, and an encapsulation cover, arranged sequentially from bottom to top. The TCO layer is divided into multiple mutually insulated strip electrodes using P1 laser scribing, generating multiple parallel P1 isolation channels. The depth of a single P1 laser scribing line is equal to the thickness of the TCO layer. After sequentially depositing the first functional layer, the perovskite layer, and the second functional layer on the TCO layer, P2 laser scribing is performed, with a scribing depth equal to the thickness of the first functional layer, the perovskite layer, and the encapsulation cover. The sum of the thicknesses of the second functional layers generates a P2 isolation channel that exposes the surface of the TCO layer. A metal electrode layer is deposited on the second functional layer. Based on the location of the P2 isolation channel, a P3 laser scribing is performed with a scribing depth equal to the sum of the thicknesses of the first functional layer, the perovskite layer, the second functional layer, and the metal electrode layer, generating a P3 interconnect channel that extends to the TCO layer. An insulating layer is deposited on the surface of the metal electrode layer to cover the sidewalls of the P1 isolation channel, the P2 isolation channel, and the P3 interconnect channel. An encapsulating film and a cover plate are sequentially stacked on the insulating layer and laminated to form a sealed assembly.

2. The perovskite solar cell module based on insulating layer protection according to claim 1, characterized in that, The insulating layer is formed on the metal electrode layer and satisfies the following condition: the thickness of the insulating layer is 5 nanometers or more.

3. The perovskite solar cell module based on insulating layer protection according to claim 2, characterized in that, The insulating layer is made of at least one material selected from Al2O3 and SiO2; the thickness of the insulating layer is 5-30 nm.

4. The perovskite solar cell module based on insulating layer protection according to claim 1, characterized in that, It also includes a drainage strip, which is laid on the metal electrode layer or the TCO layer, and the insulating layer is deposited after the drainage strip is laid.

5. An optimized method for perovskite solar cell encapsulation process based on insulating layer protection, characterized in that, include: S1: Perform P1 laser scribing on the TCO layer on the glass substrate, with the scribing depth being the thickness of the TCO layer; S2: Sequentially deposit a first functional layer, a perovskite layer, and a second functional layer on the TCO layer, and perform P2 laser scribing near the P1 laser scribing point, with the scribing depth being the sum of the thicknesses of the first functional layer, the perovskite layer, and the second functional layer. S3: Deposit a metal electrode layer on the second functional layer, and perform P3 laser scribing at a location close to the P2 laser scribing and far from the P1 laser scribing, with the scribing depth being the sum of the thicknesses of the first functional layer, the perovskite layer, the second functional layer, and the metal electrode layer; perform P4 laser edge cleaning on both sides of the battery, with the edge cleaning depth being the sum of the thicknesses of the first functional layer, the perovskite layer, the second functional layer, and the metal electrode layer. S4: Lay out the guide strips according to the battery structure; S5: Deposit an insulating layer on the metal electrode layer and the current-carrying strip. The material of the insulating layer meets the requirements that the deposition process does not damage the perovskite solar cell, has high chemical stability and insulation, and has a thickness of more than 5 nanometers. S6: Perform the following operations in sequence: busbar laying, butyl rubber coating, encapsulation film laying, encapsulation cover covering, edge sealing, lamination, and junction box installation.

6. The method for optimizing the encapsulation process of perovskite solar cells based on insulating layer protection according to claim 5, characterized in that, Step S4 specifically includes: When the battery structure is a reverse structure, the negative electrode lead strip is laid on the outermost metal electrode layer closest to P1, and the positive electrode lead strip is laid on the outermost TCO layer closest to P3. When the battery structure is a normal structure, the positive electrode lead strip is laid on the outermost metal electrode layer closest to the P1 isolation channel, and the negative electrode lead strip is laid on the outermost TCO layer closest to the P3 isolation channel.

7. The method for optimizing the encapsulation process of perovskite solar cells based on insulating layer protection according to claim 5, characterized in that, Step S3 also includes a P3.5 laser scribing line perpendicular to the laser scribing lines of P1, P2, and P3. The scribing depth is the sum of the thicknesses of the TCO layer, the first functional layer, the perovskite layer, the second functional layer, and the metal electrode layer, so as to realize the series-to-parallel connection of sub-cells within the module.

8. The method for optimizing the encapsulation process of perovskite solar cells based on insulating layer protection according to claim 5, characterized in that, The insulating layer is made of Al2O3 or SiO2 and is deposited using atomic layer deposition or magnetron sputtering.

9. The method for optimizing the encapsulation process of perovskite solar cells based on insulating layer protection according to claim 8, characterized in that, When using atomic layer deposition of Al2O3, trimethylaluminum is used as the aluminum source, ozone is used as the oxygen source, and high-purity nitrogen is used as the carrier gas and purge gas. The deposition process includes: setting the chamber temperature to 100-120℃, placing the sample in, and purging the chamber with high-purity nitrogen; introducing trimethylaluminum with a pulse time of 0.8-1.2s; introducing high-purity nitrogen with a pulse time of 60-90s; introducing ozone with a pulse time of 15-25s; introducing high-purity nitrogen with a pulse time of 90-120s to complete one cycle; and repeating the cycle 50-300 times to obtain an insulating layer with a thickness of 5-30nm.

10. The method for optimizing the encapsulation process of perovskite solar cells based on insulating layer protection according to claim 5, characterized in that, In steps S1 to S3, the distance between laser lines P1, P2, and P3 is ≥0.

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