Adhesive composition for semiconductor encapsulation

Abstract

The present disclosure relates to an adhesive composition for semiconductor encapsulation having a relatively high storage modulus after curing under specified conditions, an adhesive film for semiconductor, a dicing die bonding film, a semiconductor device, and a method for manufacturing a semiconductor device.

Description

Technical Field

[0001] Cross-reference to related applications

[0002] This application claims the priority and benefits of Korean Patent Application No. 10-2023-0094412, filed with the Korean Intellectual Property Office on July 20, 2023, and Korean Patent Application No. 10-2024-0095090, filed with the Korean Intellectual Property Office on July 18, 2024, the disclosures of which are incorporated herein by reference in their entirety.

[0003] The present disclosure relates to an adhesive composition for semiconductor packaging, an adhesive film for semiconductors, a semiconductor device, and a method for manufacturing a semiconductor device. Background Art

[0004] The demand for high density and high integration of semiconductor packaging is increasing. Accordingly, the size of semiconductor wafers is becoming larger and larger, and in order to improve the integration degree, a stacked packaging method for stacking semiconductor wafers in multiple levels is widely applied.

[0005] Due to the trend of miniaturization of semiconductor packaging size and increase in capacity, the demand for chip applications using thinner semiconductor wafers is increasing.

[0006] However, due to the thin thickness of the semiconductor wafer, cracks may occur in the semiconductor wafer during the packaging process, or a phenomenon of winding or skew of the semiconductor wafer may occur, which not only makes it difficult to perform the continuous process of manufacturing the semiconductor packaging, but also reduces the reliability of the final product. Summary of the Invention

[0007] Technical Problem

[0008] An object of the present disclosure is to provide an adhesive composition for semiconductor packaging, which can prevent cracks or warping from occurring in a semiconductor wafer even during the packaging process of applying a semiconductor wafer having a thin thickness, and is excellent in adhesive force and embedding characteristics.

[0009] Another object of the present disclosure is to provide an adhesive film for semiconductors including the adhesive composition for semiconductor packaging.

[0010] Another object of the present disclosure is to provide a dicing die bonding film including the adhesive film for semiconductors.

[0011] Still another object of the present disclosure is to provide a semiconductor device having high reliability and internal structure stability even when including a semiconductor wafer having a thin thickness.

[0012] Another object of the present disclosure is to provide a method for manufacturing a semiconductor device, which can prevent cracks or warping from occurring in a semiconductor wafer even during the packaging process of applying a semiconductor wafer with a thin thickness, and can achieve excellent adhesion and embedding characteristics between a substrate and a semiconductor wafer or between two or more semiconductor wafers.

[0013] Technical solution

[0014] The present disclosure provides an adhesive composition for semiconductor packaging, which comprises: a thermoplastic resin, a thermosetting resin, and a curing agent, wherein the storage modulus at 130 °C measured after curing under the conditions of a temperature of 120 °C to 300 °C and a pressure of 0.5 Kgf / cm 2 to 10 Kgf / cm 2 is 30 MPa or more.

[0015] The present disclosure also provides an adhesive film for semiconductors comprising the adhesive composition for semiconductor packaging.

[0016] The present disclosure also provides a diced chip bonding film comprising the adhesive film for semiconductors.

[0017] The present disclosure also provides a semiconductor device, which comprises: a substrate; one or more semiconductor wafers formed on the substrate; and an adhesive layer located between the substrate and the semiconductor wafer(s) formed on the substrate or between two or more of the semiconductor wafers, wherein the adhesive layer comprises a cured product of the adhesive composition for semiconductor packaging.

[0018] Now, the adhesive composition for semiconductor packaging, the semiconductor device, and the method for manufacturing a semiconductor device according to specific embodiments of the present disclosure will be described in more detail.

[0019] Throughout the present specification, unless otherwise specified, technical terms used herein are only used to refer to specific embodiments and are not intended to limit the present disclosure.

[0020] Unless the context clearly dictates otherwise, the singular forms "a", "an", and "the" used herein include plural references.

[0021] The terms "comprises" or "comprising" used herein specify a particular feature, region, integer, step, action, element, and / or component, but do not preclude the presence or addition of one or more different particular features, regions, integers, steps, actions, elements, components, and / or groups.

[0022] As used herein, the term "(meth)acrylate" includes both acrylate and methacrylate.

[0023] According to one embodiment of the present disclosure, an adhesive composition for a semiconductor package can be provided, which includes: a thermoplastic resin, a thermosetting resin, and a curing agent, wherein the storage modulus at 130 °C measured after curing under conditions of a temperature of 120 °C to 300 °C and a pressure of 0.5 Kgf / cm 2 to 10 Kgf / cm 2 is 30 MPa or more.

[0024] The present inventors determined that when using an adhesive composition for a semiconductor package having a storage modulus at 130 °C measured after curing under specified conditions of 30 MPa or more, even during the packaging process of applying a semiconductor wafer with a thin thickness, cracks or warping in the semiconductor wafer can be prevented, and it has excellent adhesion and embedding properties, and completed the present invention.

[0025] The storage modulus at 130 °C of the adhesive composition for a semiconductor package measured after curing under conditions of a temperature of 120 °C to 300 °C and a pressure of 0.5 Kgf / cm 2 to 10 Kgf / cm 2 can be 30 MPa or more, 50 MPa or more, or 50 MPa to 500 MPa, or 60 MPa to 400 MPa.

[0026] In the step of curing the adhesive composition for a semiconductor package under conditions of a temperature of 120 °C to 300 °C and a pressure of 0.5 Kgf / cm 2 to 10 Kgf / cm 2 a pressure condition of 0.5 Kgf / cm 2 to 10 Kgf / cm 2 or 1 Kgf / cm 2 to 8 Kgf / cm 2 can be applied.

[0027] In the step of curing the adhesive composition for a semiconductor package under conditions of a temperature of 120 °C to 300 °C and a pressure of 0.5 Kgf / cm 2 to 10 Kgf / cm 2 the curing time can be changed in consideration of specific curing conditions, etc., and can be carried out for 10 minutes to 200 minutes, including the curing step and the steps before and after the curing step.

[0028] More specifically, curing under conditions of a temperature of 120 °C to 300 °C and a pressure of 0.5 Kgf / cm 2 to 10 Kgf / cm 2 can be carried out at 7 Kgf / cm 2It is carried out under pressure conditions, and the curing includes: a step of raising the temperature from 25°C to 125°C for 30 minutes, a step of maintaining the temperature at 125°C for 30 minutes after the temperature rise, and a step of lowering the temperature to 60°C after the maintenance.

[0029] The storage modulus at 130°C measured after curing of a generally known adhesive film for semiconductors is usually in a very low range of, for example, 10 MPa or less.

[0030] In contrast, since the storage modulus at 130°C measured after curing of the adhesive composition for semiconductor packaging is within the above range, the stress applied to the semiconductor wafer can be greatly reduced or the strain of the semiconductor wafer can be greatly reduced, while firmly bonding to a semiconductor wafer having a thin thickness (for example, a thickness of 100 μm or less or 50 μm or less). Thus, due to the use of the adhesive composition for semiconductor packaging of the above embodiment as described above, even during the packaging process of applying a semiconductor wafer having a thin thickness, cracks and warping in the semiconductor wafer can be prevented.

[0031] However, "curing under the conditions of a temperature of 120°C to 300°C and a pressure of 0.5 Kgf / cm 2 to 10 Kgf / cm 2 is not intended to limit the specific use or process of applying the adhesive composition for semiconductor packaging of the above embodiment, but is set to define the specific conditions of the storage modulus at 130°C of the adhesive composition for semiconductor packaging of the above embodiment after curing.

[0032] The adhesive composition for semiconductor packaging can be used for the purpose of connecting a substrate to a semiconductor wafer having a thickness of 100 μm or less or 50 μm or less, or for the purpose of connecting two or more semiconductor wafers having a thickness of 100 μm or less or 50 μm or less.

[0033] The thickness of the semiconductor wafer can be 100 μm or less, or 50 μm or less, 40 μm or less, 30 μm or less, or 1 μm or more, 2 μm or more, 5 μm or more, or 10 μm or more.

[0034] The storage modulus at 130°C is measured using a DMA (dynamic mechanical analysis) device at a frequency of 1 Hz and a strain of 0.0%, wherein the storage modulus (G') according to the temperature is measured while raising the temperature from -30°C to 280°C at a rate of 10°C / minute, thereby enabling the determination of the storage modulus at 130°C of the cured adhesive composition for semiconductor packaging.

[0035] Meanwhile, the adhesive composition for semiconductor packaging may not contain an excessive amount of inorganic filler or may be substantially free of inorganic filler, but may have a storage modulus at 130°C of 30 MPa or greater as measured after curing under conditions of a temperature of 120°C to 300°C and a pressure of 0.5 Kgf / cm 2 to 10 Kgf / cm 2 .

[0036] When an adhesive composition or an adhesive film containing an excessive amount of inorganic filler is used during the packaging process of a semiconductor wafer with a thin thickness, it may increase the stress applied to the semiconductor wafer or cause deformation of the shape of the semiconductor wafer, and may also increase the viscosity of the film, which may be disadvantageous to the embedding characteristics.

[0037] In contrast, since the adhesive composition for semiconductor packaging basically uses a small amount of inorganic filler or does not contain inorganic filler, cracks or warping in the semiconductor wafer can be prevented even during the packaging process of a semiconductor wafer with a thin thickness.

[0038] More specifically, the adhesive composition for semiconductor packaging may contain inorganic filler in an amount of 5 wt% or less, 4.9 wt% or less, 4.8 wt% or less, 4.6 wt% or less, or 1 wt% or less, 0.1 wt% or less, or 0.01 wt% or less, and may be substantially free of inorganic filler.

[0039] The adhesive composition for semiconductor packaging may not contain inorganic filler, or the adhesive composition for semiconductor packaging may also contain inorganic filler in an amount of 4.9 wt% or less.

[0040] The specific type of the inorganic filler is not particularly limited, and the inorganic filler may be inorganic fine particles having a particle size of 1000 um or less.

[0041] Meanwhile, the melt viscosity of the adhesive composition for semiconductor packaging measured at 110°C by applying a shear rate of 5 rad / sec may be 3,000 Pa·s to 50,000 Pa·s, or 4,000 Pa·s to 30,000 Pa·s, or 4,500 Pa·s to 25,000 Pa·s, or 4,000 Pa·s to 20,000 Pa·s.

[0042] The melt viscosity may be a value measured before curing the adhesive composition for semiconductor packaging as described above.

[0043] The melt viscosity of the adhesive composition for semiconductor packaging can be measured by known methods. For example, the adhesive composition for semiconductor packaging can be produced in the form of an adhesive film to measure the melt viscosity.

[0044] More specifically, an adhesive film specimen obtained from the adhesive composition for semiconductor packaging is laminated to a thickness of 300 μm to 800 μm, then laminated at 60 °C using a roll laminator, then formed into a circle with a diameter of 8 mm, and the melt viscosity can be measured by a method such as using TA Instruments ARES-G2. At this time, the melt viscosity can also be the viscosity value measured at 110 °C by applying a heating rate of 20 °C / minute at a shear rate of 5 Rad / second.

[0045] Melt viscosity means an absolute value representing the degree of viscosity of a material in a fluid state against the direction of movement.

[0046] During the semiconductor packaging process, the adhesive composition for semiconductor packaging can undergo a chip attachment process at a temperature of about 110 °C. However, since the melt viscosity of the adhesive composition for semiconductor packaging measured at 110 °C is 3,000 Pa·s to 50,000 Pa·s, or 4,000 Pa·s to 30,000 Pa·s, it can effectively embed the space formed between the substrate and the semiconductor wafer or between two or more semiconductor wafers, thereby preventing the occurrence of voids or a deterioration in the connection state.

[0047] As described above, the adhesive composition for semiconductor packaging can contain a thermoplastic resin.

[0048] Examples of the thermoplastic resin include (meth)acrylate resin, polyimide, polyetherimide, polyesterimide, polyamide, polyethersulfone, polyetherketone, polyvinyl chloride, polybutadiene resin, acrylonitrile-butadiene copolymer, acrylonitrile-butadiene-styrene resin, styrene-butadiene copolymer, phenoxy resin, etc.

[0049] The glass transition temperature of the thermoplastic resin can be -50 °C to 70 °C. By using a thermoplastic resin having the above glass transition temperature, the finally produced adhesive film for semiconductors can ensure high adhesive strength and can be easily produced in the form of a thin film or the like.

[0050] Meanwhile, the (meth)acrylate resin containing repeating units substituted with glycidyl or epoxy groups has the characteristic of high density in the reactor and can have a glass transition temperature of -20 °C to 30 °C.

[0051] Here, if the epoxy group content in the (meth)acrylate resin is less than 1% by weight, the compatibility and adhesion with the epoxy resin are insufficient, while if the content is greater than 30% by weight, the viscosity increase rate due to curing is too fast, making it possible that the embedding or adhesion of the adhesion target cannot be fully achieved.

[0052] The weight-average molecular weight of the (meth)acrylate resin containing repeating units substituted with glycidyl or epoxy groups can be from 50,000 g / mol to 1,200,000 g / mol.

[0053] As a non-limiting example, the weight-average molecular weight can be measured using an Agilent PL-GPC 220 instrument equipped with a 300 mm long PolarGel MIXED-L column (Polymer Laboratories). The measurement temperature is 65 °C, dimethylformamide is used as the solvent, and the flow rate is 1 mL / min. The sample is prepared at a concentration of 10 mg / 10 mL and then supplied in an amount of 100 μL. The values of Mw and Mn are obtained using a calibration curve formed with polystyrene standards. Eight polystyrene standards with molecular weights (g / mol) of 580 / 3,940 / 8,450 / 31,400 / 70,950 / 316,500 / 956,000 / 4,230,000 are used.

[0054] (The (meth)acrylate resin is an epoxy group-containing acrylic copolymer and can contain glycidyl acrylate or glycidyl methacrylate in an amount of 1% to 30% by weight, or 2% to 20% by weight, or 2.5% to 15% by weight based on the total weight.

[0055] If the epoxy group content in the (meth)acrylate resin is less than 1% by weight, the compatibility and adhesion with the epoxy resin are insufficient, while if the content is greater than 30% by weight, the viscosity increase rate due to curing may be too fast, making it possible that the embedding or adhesion of the adhesion target cannot be fully achieved.

[0056] The content of the thermoplastic resin can be determined in consideration of the fluidity of the composition during the production of the adhesive film, the physical properties of the final adhesive film, etc.

[0057] Meanwhile, the thermoplastic resin can contain two or more (meth)acrylate-based resins having different glass transition temperatures.

[0058] More specifically, the thermoplastic resin may include: a (meth)acrylate resin containing repeating units substituted with glycidyl or epoxy groups and having a glass transition temperature of -20°C to 5°C; and a (meth)acrylate resin containing repeating units substituted with glycidyl or epoxy groups and having a glass transition temperature of 7°C to 30°C.

[0059] The (meth)acrylate resins having different glass transition temperatures may each have a weight average molecular weight of 50,000 to 1,500,000.

[0060] Since the thermoplastic resin includes a (meth)acrylate-based resin containing repeating units substituted with glycidyl or epoxy groups and having a glass transition temperature of -20°C to 5°C, the adhesive composition for semiconductor packaging can achieve higher processability, making it easier to process into forms such as films.

[0061] In addition, since the thermoplastic resin includes a (meth)acrylate-based resin containing repeating units substituted with glycidyl or epoxy groups and having a glass transition temperature of 7°C to 30°C, the adhesive composition for semiconductor packaging can have enhanced wettability characteristics with respect to a wafer and a higher storage modulus (at 130°C).

[0062] As described above, the adhesive composition for semiconductor packaging may include a thermosetting resin.

[0063] More specifically, the thermosetting resin may include a polyhedral oligomeric silsesquioxane compound substituted with glycidyl or epoxy groups.

[0064] Therefore, when using an adhesive composition for semiconductor packaging including a polyhedral oligomeric silsesquioxane compound substituted with glycidyl or epoxy groups, even during the packaging process of applying a semiconductor wafer having a thin thickness, cracks or warping in the semiconductor wafer can be prevented, and excellent adhesion and embedding characteristics can be achieved.

[0065] The polyhedral oligomeric silsesquioxane compound substituted with glycidyl or epoxy groups may include an organic-inorganic hybrid epoxy resin having repeating units represented by the following Chemical Formula 1.

[0066] [Chemical Formula 1]

[0067]

[0068] In Chemical Formula 1, each R is independently a monovalent functional group having one or more epoxy groups, and n is 1 to 30.

[0069] Each R in Chemical Formula 1 1 may independently be any functional group selected from the following structural formulas:

[0070]

[0071] In the present disclosure, the symbol represents the part where the corresponding functional group is connected to another group.

[0072] The average epoxy equivalent of the organic-inorganic hybrid epoxy resin can be from 50 g / equivalent to 300 g / equivalent. The average epoxy equivalent is a value calculated based on the weight ratio and epoxy equivalent of each epoxy resin contained in the organic-inorganic hybrid epoxy resin.

[0073] Preferably, the average epoxy equivalent of the organic-inorganic hybrid epoxy resin can be from 50 g / equivalent to 300 g / equivalent, or from 100 g / equivalent to 300 g / equivalent, or from 100 g / equivalent to 250 g / equivalent, or from 150 g / equivalent to 250 g / equivalent, or from 150 g / equivalent to 200 g / equivalent, or from 160 g / equivalent to 180 g / equivalent.

[0074] To achieve the effect due to the addition of the organic-inorganic hybrid epoxy resin, the average epoxy equivalent of the organic-inorganic hybrid epoxy resin is preferably 50 g / equivalent or more. However, too high an epoxy equivalent may deteriorate the physical properties of the adhesive composition for semiconductor encapsulation. Therefore, the average epoxy equivalent of the organic-inorganic hybrid epoxy resin is preferably 300 g / equivalent or less.

[0075] The viscosity of the organic-inorganic hybrid epoxy resin measured at 25 °C is preferably from 0.1 Pa·s to 10000 Pa·s, or from 0.5 Pa·s to 5000 Pa·s.

[0076] If the viscosity of the organic-inorganic hybrid epoxy resin is too high, the physical properties of the adhesive composition for semiconductor encapsulation and the physical properties of the adhesive film may deteriorate. Therefore, the viscosity of the organic-inorganic hybrid epoxy resin is preferably 10000 Pa·s or less.

[0077] The thermosetting resin may further contain an epoxy resin and a silsesquioxane compound substituted with a glycidyl group or an epoxy group.

[0078] Specific examples of such epoxy resins include: bisphenol-based epoxy resins, biphenyl-based epoxy resins, naphthalene-based epoxy resins, fluorene-based epoxy resins, phenol novolak-based epoxy resins, cresol novolak-based epoxy resins, xylok-based epoxy resins, trihydroxyphenylmethane-based epoxy resins, tetraphenylmethane-based epoxy resins, dicyclopentadiene-type epoxy resins, dicyclopentadiene-modified phenol-type epoxy resins, or a mixture or copolymer of two or more thereof.

[0079] More specifically, when the thermosetting resin further contains an epoxy resin and a glycidyl group- or epoxy group-substituted silsesquioxane compound, the epoxy resin can be a biphenyl-based epoxy resin having a softening point of 50°C to 100°C, a cresol novolak-based epoxy resin having a softening point of 50°C to 100°C, or a bisphenol A epoxy resin having a softening point of 50°C to 100°C.

[0080] When the thermosetting resin further contains an epoxy resin and a glycidyl group- or epoxy group-substituted silsesquioxane compound, the epoxy resin can be included in an amount of 10 parts by weight to 500 parts by weight relative to 100 parts by weight of the glycidyl group- or epoxy group-substituted silsesquioxane compound.

[0081] Meanwhile, the adhesive composition for semiconductor packaging can contain at least one compound selected from an amine-based curing agent, a phenol-based curing agent, and an acid anhydride-based curing agent as a curing agent.

[0082] As the curing agent, a novolak-based phenol resin can be preferably applied.

[0083] The novolak-based phenol resin has a chemical structure in which rings are positioned between reactive functional groups. Due to such a structural feature, the novolak-based phenol resin can further reduce the hygroscopicity of the adhesive composition and further improve the stability during the high-temperature IR reflow process, which can play a role in preventing the peeling phenomenon or reflow cracking of the adhesive film.

[0084] Specific examples of the novolak-based phenol resin include at least one selected from the following: novolak phenol resin, new novolak phenol resin, cresol novolak phenol resin, biphenol novolak phenol resin, bisphenol A novolak phenol resin, and bisphenol F novolak phenol resin.

[0085] As the novolak-based phenol resin, those having a softening point of 60°C or higher, or 60°C to 150°C, or 105°C to 150°C, or 70°C to 120°C can be preferably applied.

[0086] The novolak-based phenol resin having a softening point of 60°C or higher can exhibit sufficient heat resistance, strength, and adhesive properties after curing the adhesive composition. However, if the softening point of the novolak-based phenol resin is too high, the fluidity of the adhesive composition becomes low, and voids are generated inside the adhesive during the actual semiconductor production process, which may greatly reduce the reliability or quality of the final product.

[0087] The novolak-based phenol resin preferably has a hydroxyl equivalent of 80 g / equivalent to 300 g / equivalent and a softening point of 60°C to 150°C.

[0088] The adhesive composition for semiconductor packaging can appropriately adjust the content of each of the thermoplastic resin, the thermosetting resin, and the curing agent in consideration of specific physical properties and the like. For example, relative to 100 parts by weight of the thermosetting resin, the adhesive composition for semiconductor packaging can contain 5 to 500 parts by weight of the thermoplastic resin and 1 to 150 parts by weight of the curing agent.

[0089] The adhesive composition for semiconductor packaging may further contain at least one compound selected from a phosphorus-based compound, a boron-based compound, a phosphorus-boron-based compound, and an imidazole-based compound as a curing catalyst.

[0090] The curing catalyst is used to promote the action of the curing agent or the curing of the resin composition for semiconductor adhesion, and any curing catalyst known to be used in the production of semiconductor adhesive films and the like can be used without significant limitation.

[0091] The content of the curing catalyst can be adjusted in consideration of the content of the curing agent and the physical properties of the finally produced adhesive film. For example, based on 100 parts by weight of the thermosetting resin, the curing catalyst can be used in an amount of 0.1 to 20 parts by weight, or 0.5 to 15 parts by weight, or 1.0 to 10 parts by weight, or 1.5 to 5 parts by weight, or 1.5 to 3 parts by weight.

[0092] The adhesive composition for semiconductor packaging may further contain an organic solvent.

[0093] The content of the organic solvent can be determined in consideration of the physical properties of the adhesive composition and the adhesive film containing it, as well as the productivity of these production processes.

[0094] For example, based on the total amount of 100 parts by weight of the thermosetting resin, the thermoplastic resin, the curing agent, and other additives, the organic solvent can be contained in an amount of 10 to 90 parts by weight.

[0095] The organic solvent can be at least one compound selected from esters, ethers, ketones, aromatic hydrocarbons, and sulfoxides.

[0096] The ester solvents can be ethyl acetate, n-butyl acetate, isobutyl acetate, amyl formate, isoamyl acetate, isobutyl acetate, butyl propionate, isopropyl butyrate, ethyl butyrate, butyl butyrate, methyl lactate, ethyl lactate, γ-butyrolactone, ε-caprolactone, δ-valerolactone; alkyl oxyacetates, such as methyl oxyacetate, ethyl oxyacetate, methyl methoxyacetate, ethyl methoxyacetate, butyl methoxyacetate, methyl ethoxyacetate, ethyl ethoxyacetate, methyl 3-oxopropionate, ethyl 3-oxopropionate, etc., methyl 3-methoxypropionate, ethyl 3-methoxypropionate, methyl 3-ethoxypropionate, ethyl 3-ethoxypropionate, methyl 2-oxopropionate, ethyl 2-oxopropionate, methyl 2-methoxypropionate, ethyl 2-methoxypropionate, propyl 2-methoxypropionate, methyl 2-ethoxypropionate, ethyl 2-ethoxypropionate, methyl 2-oxo-2-methylpropionate, methyl 2-methoxy-2-methylpropionate, ethyl 2-ethoxy-2-methylpropionate, methyl pyruvate, ethyl pyruvate, propyl pyruvate, methyl acetoacetate, ethyl acetoacetate, methyl 2-oxobutyrate, ethyl 2-oxobutyrate, etc.

[0097] The ether solvents can be diethylene glycol dimethyl ether, tetrahydrofuran, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, methyl cellosolve acetate, ethyl cellosolve acetate, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monobutyl ether, propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether acetate, propylene glycol monopropyl ether acetate, etc.

[0098] The ketone solvents can be methyl ethyl ketone, cyclohexanone, cyclopentanone, 2-heptanone, 3-heptanone, N-methyl-2-pyrrolidone, etc.

[0099] The aromatic hydrocarbon solvents can include toluene, xylene, anisole, limonene, etc.

[0100] The sulfoxide solvents can be dimethyl sulfoxide, etc.

[0101] The adhesive composition for semiconductor packaging may further contain a coupling agent.

[0102] The type of coupling agent is not particularly limited, but preferably, 2-(3,4-epoxycyclohexyl)-ethyltrimethoxysilane, 3-glycidoxypropyltrimethoxysilane, 3-glycidoxypropylmethyldiethoxysilane, 3-glycidoxypropyltriethoxysilane, N-2(aminoethyl)-3-aminopropylmethyldimethoxysilane, N-2(aminoethyl)-3-aminopropyltrimethoxysilane, N-2(aminoethyl)-3-aminopropyltriethoxysilane, 3-aminopropyltrimethoxysilane, 3-aminopropyltriethoxysilane, 3-triethoxy-N-(1,3-dimethyl-butylene)propylamine, N-phenyl-3-aminopropyltrimethoxysilane, mercapto group-containing 3-mercaptopropylmethyldimethoxysilane, 3-mercaptopropyltrimethoxysilane, etc. can be preferably applied.

[0103] The phenol can be a compound having at least two phenolic hydroxyl groups.

[0104] For example, the phenol can be catechol, resorcinol, hydroquinone, bisphenol, dihydroxynaphthalene, hydroxyhydroquinone, pyrogallol, methylenebisphenol (bisphenol F), isopropylidene bisphenol (bisphenol A), ethylidene bisphenol (bisphenol AD), 1,1,1-tris(4-hydroxyphenyl)ethane, trihydroxybenzophenone, trihydroxyacetophenone, poly(p-vinylphenol), etc.

[0105] As the compound having at least two phenolic hydroxyl groups, at least one compound selected from the following can be applied: a compound having at least one phenolic hydroxyl group in the molecule; an aromatic compound having two halomethyl, alkoxymethyl or hydroxymethyl groups in the molecule; and a condensate of divinylbenzene and at least one compound selected from aldehydes.

[0106] The compound having at least one phenolic hydroxyl group in the molecule can include phenol, alkylphenol, naphthol, cresol, catechol, resorcinol, hydroquinone, bisphenol, dihydroxynaphthalene, hydroxyhydroquinone, pyrogallol, methylenebisphenol (bisphenol F), isopropylidene bisphenol (bisphenol A), ethylidene bisphenol (bisphenol AD), 1,1,1-tris(4-hydroxyphenyl)ethane, trihydroxybenzophenone, trihydroxyacetophenone or poly(p-vinylphenol). In addition, the aromatic compound having two halomethyl, alkoxymethyl or hydroxymethyl groups in the molecule can include, for example, 1,2-bis(chloromethyl)benzene, 1,3-bis(chloromethyl)benzene, 1,4-bis(chloromethyl)benzene, 1,2-bis(methoxymethyl)benzene, 1,3-bis(methoxymethyl)benzene, 1,4-bis(methoxymethyl)benzene, 1,2-bis(hydroxymethyl)benzene, 1,3-bis(hydroxymethyl)benzene, 1,4-bis(hydroxymethyl)benzene, or bis(chloromethyl)biphenyl, bis(methoxymethyl)biphenyl.

[0107] The aldehyde can include formaldehyde (formalin as its aqueous solution), paraformaldehyde, tri an alkane or hexamethylenetetramine.

[0108] The polycondensate may include novolak resins which are polycondensates of phenol and formaldehyde; cresol novolak resins which are polycondensates of cresol and formaldehyde; naphthol novolak resins which are polycondensates of naphthol and formaldehyde; phenol aralkyl resins which are polycondensates of phenol and 1,4-bis(methoxymethyl)benzene; polycondensates of bisphenol A and formaldehyde; polycondensates of phenol and divinylbenzene; or polycondensates of cresol, naphthol and formaldehyde. Moreover, these polycondensates may be modified with rubber or may be compounds in which an aminotriazine skeleton or a dicyclopentadiene skeleton is introduced into the molecular skeleton.

[0109] In addition, the compound obtained by allylating and liquefying a compound having a phenolic hydroxyl group may include allylated novolak resins, diallyl bisphenol A, diallyl bisphenol F, diallyl bisphenol, etc.

[0110] The alcohol may be a compound having at least two alcoholic hydroxyl groups in the molecule.

[0111] For example, the alcohol may be 1,3-di alkane-5,5-dimethanol, 1,5-pentanediol, 2,5-furfuryl alcohol, diethylene glycol, tetraethylene glycol, pentaethylene glycol, hexaethylene glycol, 1,2,3-hexanetriol, 1,2,4-butanetriol, 1,2,6-hexanetriol, 3-methylpentane-1,3,5-triol, glycerol, trimethylolethane, trimethylolpropane, erythritol, pentaerythritol, ribitol, sorbitol, 2,4-diethyl-1,5-pentanediol, propylene glycol monomethyl ether, propylene glycol monoethyl ether, 1,3-butanediol, 2-ethyl-1,3-hexanediol, N-butyldiethanolamine, N-ethyldiethanolamine, diethanolamine, triethanolamine, N,N-bis(2-hydroxyethyl) isopropanolamine, bis(2-hydroxymethyl)iminotris(hydroxymethyl)methane, N,N,N',N'-tetrakis(2-hydroxyethyl)ethylenediamine, 1,1',1”,1”'-(ethylenedinitrilo)tetrakis(2-propanol), etc.

[0112] Meanwhile, according to another embodiment of the present disclosure, a semiconductor adhesive film including the adhesive composition for semiconductor packaging of the above embodiment may be provided.

[0113] The adhesive composition for semiconductor packaging may be in the form of an adhesive film.

[0114] The adhesive film may include an adhesive layer in which the adhesive composition for semiconductor packaging is dried or cured.

[0115] The adhesive films for semiconductors can each have a thickness of 1 μm to 300 μm. The thickness can refer to the thickness of a single layer or one layer of the adhesive film for semiconductors. In addition, the adhesive films for semiconductors can each have a thickness of 1 μm or more, 3 μm or more, 5 μm or more, or 10 μm or more. In addition, the adhesive films for semiconductors can each have a thickness of 300 μm or less, or 100 μm or less, or 90 μm or less, or 70 μm or less. When the thickness of the adhesive film for semiconductors increases or decreases by a specific value, the physical properties measured in the adhesive film for semiconductors can also change by a specified value.

[0116] In addition, the adhesive film for semiconductors can be in the form of a multilayer film in which a plurality of layers are formed of one film having a thickness of 1 μm to 300 μm.

[0117] The adhesive film can be used as a die attach film (DAF) for bonding a lead frame or a substrate to a chip, or for bonding chips to each other. Thus, the adhesive film can be processed into forms such as a chip bonding film or a diced chip bonding film.

[0118] The adhesive film can have a configuration in which a support substrate and an adhesive layer are laminated in sequence.

[0119] The adhesive film can have a configuration in which a support substrate, an adhesive layer, and a protective film are laminated in sequence.

[0120] The adhesive film can have a configuration in which a support substrate, an adhesive layer, an adhesive layer, and a protective film are laminated in sequence.

[0121] As the support substrate, a resin film having excellent heat resistance or chemical resistance; a crosslinked film obtained by subjecting the resin constituting the resin film to a crosslinking treatment; or a film obtained by applying a silicone resin or the like to the surface of the resin film and subjecting it to a peeling treatment can be used.

[0122] As the resin constituting the resin film, polyolefins such as polyester, polyethylene, polypropylene, polybutene, and polybutadiene; vinyl chloride; ethylene-methyl methacrylate copolymer; ethylene vinyl acetate copolymer; polyester; polyimide; polyethylene terephthalate; polyamide; and polyurethane can be applied.

[0123] The thickness of the support substrate is not particularly limited, but can be 3 μm to 400 μm, or 5 μm to 200 μm, or 10 μm to 150 μm.

[0124] The adhesive layer can contain the above-mentioned adhesive composition for semiconductor packaging. Details of the adhesive composition for semiconductor packaging are as described above.

[0125] The type of the protective film is not particularly limited, and a plastic film known in the art can be applied. For example, the above protective film can be a plastic film containing a resin such as: low-density polyethylene, linear polyethylene, medium-density polyethylene, high-density polyethylene, ultra-low-density polyethylene, random copolymer of polypropylene, block copolymer of polypropylene, homopolypropylene, polymethylpentene, ethylene-vinyl acetate copolymer, ethylene-methacrylic acid copolymer, ethylene-methyl methacrylate copolymer, ethylene-ionomer copolymer, ethylene-vinyl alcohol copolymer, polybutene, styrene copolymer.

[0126] According to another embodiment of the present disclosure, a dicing chip bonding film can be provided, which includes: a base film; a cohesive layer formed on the base film; and an adhesive layer formed on the cohesive layer and including the semiconductor adhesive film of other embodiments.

[0127] Specific details regarding the semiconductor adhesive film are as described above in other embodiments.

[0128] The type of the base film included in the dicing chip bonding film is not particularly limited, and for example, a plastic film or a metal foil known in the art can be used. For example, the base film can include low-density polyethylene, linear polyethylene, medium-density polyethylene, high-density polyethylene, ultra-low-density polyethylene, random copolymer of polypropylene, block copolymer of polypropylene, homopolypropylene, polymethylpentene, ethylene-vinyl acetate copolymer, ethylene-methacrylic acid copolymer, ethylene-methyl methacrylate copolymer, ethylene-ionomer copolymer, ethylene-vinyl alcohol copolymer, polybutene, styrene copolymer, or a mixture of two or more of them. As used herein, the term "base film containing a mixture of two or more polymers" includes a film having a structure in which two or more layers of films each containing the foregoing polymers are laminated, or a single-layer film containing two or more of the foregoing polymers.

[0129] The thickness of the base film is not particularly limited, and it is generally formed to have a thickness of 10 μm to 200 μm, preferably 50 μm to 180 μm. If the thickness is less than 10 μm, there is a possibility that the adjustment of the dicing depth becomes unstable during the dicing process, while if the thickness is greater than 200 μm, there is a possibility that a large amount of burrs are generated during the dicing process, or the stretching rate may decrease, and thus the expansion process may not be accurately performed.

[0130] If necessary, the base film can be subjected to conventional physical or chemical treatments, such as defrosting treatment, corona discharge treatment, primer treatment, or crosslinking treatment.

[0131] Meanwhile, the cohesive layer may include an ultraviolet-curable adhesive or a heat-curable adhesive. When using an ultraviolet-curable adhesive, ultraviolet light is irradiated from the base film side to increase the cohesive force and glass transition temperature of the adhesive and reduce the adhesive force, and when using a heat-curable adhesive, the cohesive force is reduced by applying temperature.

[0132] Meanwhile, the ultraviolet-curable adhesive may include a (meth)acrylate resin, an ultraviolet-curable compound, a photoinitiator, and a crosslinking agent.

[0133] The weight-average molecular weight of the (meth)acrylate resin may be from 100,000 g / mol to 1,500,000 g / mol, preferably from 200,000 g / mol to 1,000,000 g / mol. If the weight-average molecular weight is less than 100,000 g / mol, the coating property or cohesive force may be reduced, and residues may remain on the adherend during peeling, or the adhesive may be damaged. In addition, if the weight-average molecular weight exceeds 1,500,000 g / mol, the base resin may hinder the reaction of the ultraviolet-curable compound, and the peeling strength may not be effectively reduced.

[0134] Such a (meth)acrylate resin may be, for example, a copolymer of a (meth)acrylate monomer and a monomer containing a crosslinkable functional group. In this case, examples of the (meth)acrylate monomer may be an alkyl (meth)acrylate. More specifically, examples of the monomer having an alkyl group containing 1 to 12 carbon atoms include any one of the following or a combination of two or more: pentyl (meth)acrylate, n-butyl (meth)acrylate, ethyl (meth)acrylate, methyl (meth)acrylate, hexyl (meth)acrylate, n-octyl (meth)acrylate, isooctyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, dodecyl (meth)acrylate, or decyl (meth)acrylate. By using a monomer having a large number of alkyl carbon atoms, the glass transition temperature of the final copolymer is reduced, so that a suitable monomer can be selected according to the desired glass transition temperature.

[0135] Examples of the monomer containing a crosslinkable functional group include any one of a hydroxyl group-containing monomer, a carboxyl group-containing monomer, and a nitrogen-containing monomer or a combination of two or more. In this case, examples of the hydroxyl group-containing compound include 2-hydroxyethyl (meth)acrylate or 2-hydroxypropyl (meth)acrylate, examples of the carboxyl group-containing compound include (meth)acrylic acid, and examples of the nitrogen-containing monomer include (meth)acrylonitrile, N-vinylpyrrolidone, or N-vinylcaprolactam, but are not limited thereto.

[0136] From the perspective of improving other functions (such as compatibility), the (meth)acrylate resin may also contain vinyl acetate, styrene, or a low-molecular-weight compound containing an acrylonitrile carbon-carbon double bond.

[0137] The type of the ultraviolet curable compound is not particularly limited, and for example, a polyfunctional compound (such as a polyfunctional urethane acrylate, a polyfunctional acrylate monomer or oligomer) having a weight average molecular weight of 100 g / mol to 300,000 g / mol, or 500 g / mol to 100,000 g / mol can be used. A person of ordinary skill in the art can easily select a suitable compound according to the intended use.

[0138] Relative to 100 parts by weight of the above base resin, the content of the ultraviolet curable compound may preferably be 5 parts by weight to 400 parts by weight, and more preferably 10 parts by weight to 200 parts by weight. If the content of the ultraviolet curable compound is less than 5 parts by weight, the adhesive strength after curing may not be sufficiently reduced, and the pick-up characteristics may be reduced. If the content exceeds 400 parts by weight, the cohesive force of the cohesive agent before ultraviolet irradiation may be insufficient, or it may not be easy to achieve peeling from a release film or the like.

[0139] The type of the photoinitiator is also not particularly limited, and a general initiator known in the art can be used, and its content may be 0.05 parts by weight to 20 parts by weight relative to 100 parts by weight of the ultraviolet curable compound. If the content of the photoinitiator is less than 0.05 parts by weight, the curing reaction caused by ultraviolet irradiation may be insufficient, which may lead to a reduction in pick-up characteristics. If the content exceeds 20 parts by weight, a crosslinking reaction may occur in a short unit during the curing process, or unreacted ultraviolet curable compound may be generated, which may lead to residues on the surface of the adherend, or the peel force may be too low after curing, which results in a reduction in pick-up characteristics.

[0140] In addition, the type of the crosslinking agent that provides adhesive force and cohesive force contained in the cohesive part is not particularly limited, and a conventional compound such as an isocyanate-based compound, an aziridine-based compound, an epoxy-based compound, or a metal chelate-based compound can be used. Based on 100 parts by weight of the base resin, the crosslinking agent may be included in an amount of 2 parts by weight to 40 parts by weight, preferably 2 parts by weight to 20 parts by weight. If the content is less than 2 parts by weight, the cohesive force of the adhesive may be insufficient, while if the content exceeds 20 parts by weight, the cohesive force before ultraviolet irradiation may be insufficient, which may lead to wafer scattering or the like.

[0141] The cohesive layer may also contain a tackifier such as a rosin resin, a terpene resin, a phenolic resin, a styrene resin, an aliphatic petroleum resin, an aromatic petroleum resin, or an aliphatic-aromatic copolymer petroleum resin.

[0142] The thickness of the cohesive layer is not particularly limited, but may be in the range of, for example, 1 μm to 500 μm.

[0143] Meanwhile, as described above, the adhesive layer is formed on the cohesive layer and may include the semiconductor adhesive film of the above embodiments. Details of the semiconductor adhesive film include all matters described above in other embodiments.

[0144] The method for producing the above-described diced chip bonding film is not particularly limited, and for example, a method of sequentially forming a cohesive portion, an adhesive portion, and a release film on a base film, or a method of separately producing a diced film (base film + cohesive portion) and a chip bonding film or a release film having an adhesive portion formed thereon, and then laminating them with each other may be used.

[0145] Meanwhile, according to another embodiment of the present disclosure, a method for dicing a semiconductor wafer may be provided, the method including: a preprocessing step of partially processing a semiconductor wafer including the diced chip bonding film of other embodiments and a wafer laminated on at least one side of the diced chip bonding film so that it is completely diced or preprocessed so that it can be diced; a step of irradiating UV to the base film of the preprocessed semiconductor wafer, and picking up each wafer separated by dicing the semiconductor wafer.

[0146] Details of the diced chip bonding film include all the contents described above in other embodiments.

[0147] Except for the details of the steps of the dicing method, known devices, dicing methods, etc. for dicing a semiconductor wafer may be used without particular limitation.

[0148] The method for dicing a semiconductor wafer may further include a step of expanding the semiconductor wafer after the preprocessing step. In this case, the steps of irradiating UV to the base film of the expanded semiconductor wafer and picking up each wafer separated by dicing the semiconductor wafer are sequentially performed.

[0149] By using the diced chip bonding film including the diced film, the incidence rate of burrs can be minimized during the dicing process of the semiconductor wafer, thereby preventing contamination of the semiconductor wafer and improving the reliability and lifespan of the semiconductor wafer.

[0150] Meanwhile, according to still another embodiment of the present disclosure, a semiconductor device may be provided, which includes: a base; one or more semiconductor wafers formed on the base; and an adhesive layer located between the base and the semiconductor wafers formed on the base or between two or more semiconductor wafers in the semiconductor wafers.

[0151] In this case, the adhesive layer may include a cured product of the adhesive composition for semiconductor packaging of the above embodiments.

[0152] The thickness of the semiconductor wafer may be 100 um or less, 50 um or less, 40 um or less, 30 um or less, or 1 um or greater, 2 um or greater, 5 um or greater, or 10 um or greater.

[0153] In the process of obtaining the cured product of the adhesive composition for semiconductor packaging, the curing conditions are not particularly limited, and for example, curing can be carried out at a temperature of 120 °C to 300 °C and a pressure of 0.5 Kgf / cm 2 to 10 Kgf / cm 2 However, as described above, the curing conditions do not limit the specific application or form of use of the adhesive composition for semiconductor packaging.

[0154] The storage modulus of the adhesive layer measured at 130 °C after curing may be 30 MPa or greater, or 50 MPa to 500 MPa, or 60 MPa to 400 MPa.

[0155] More specific details of the adhesive layer include those described above regarding the adhesive composition for semiconductor packaging of the embodiments.

[0156] The semiconductor device of the above embodiments can have high reliability and internal structure stability even when including a semiconductor wafer with a thin thickness.

[0157] The melt viscosity measured at 110 °C by applying a shear rate of 5 rad / s to the adhesive composition for semiconductor packaging may be 3,000 Pa·s to 50,000 Pa·s, or 4,000 Pa·s to 30,000 Pa·s, or 4,500 Pa·s to 25,000 Pa·s, or 4,000 Pa·s to 20,000 Pa·s.

[0158] The adhesive composition for semiconductor packaging of the above embodiments has the above melt viscosity at 110 °C, and thus can effectively fill the space formed between the substrate and the semiconductor wafer or between two or more semiconductor wafers, thereby preventing the occurrence of voids and the deterioration of the connection state.

[0159] Since the storage modulus of the adhesive layer at 130 °C is 30 MPa, while firmly bonding with a semiconductor wafer having a thin thickness, the stress applied to the semiconductor wafer can be greatly reduced or the strain of the semiconductor wafer can be greatly reduced, which makes it possible to prevent cracks and warping from occurring in the semiconductor wafer even during the packaging process using a semiconductor wafer with a thin thickness.

[0160] Meanwhile, according to another embodiment of the present disclosure, a method for manufacturing a semiconductor device can be provided, the method including curing an adhesive layer under conditions of a temperature of 120°C to 300°C and a pressure of 0.5 Kgf / cm 2 to 10 Kgf / cm 2 in a state where the adhesive layer is formed between a substrate and a semiconductor wafer formed on the substrate or between two or more semiconductor wafers.

[0161] At this time, the adhesive layer may include a cured product of the adhesive composition for semiconductor packaging of the above embodiments.

[0162] However, as described above, the curing conditions do not limit the specific application or usage form of the adhesive composition for semiconductor packaging.

[0163] The thickness of the semiconductor wafer may be 100 um or less, or 50 um or less, 40 um or less, 30 um or less, or 1 um or more, 2 um or more, 5 um or more, or 10 um or more.

[0164] More specific details of the adhesive layer include the content described above regarding the adhesive composition for semiconductor packaging of the above embodiments.

[0165] In the method for manufacturing a semiconductor device, in addition to those described above, conventional semiconductor packaging methods can be used.

[0166] Advantageous Effects

[0167] According to the present disclosure, an adhesive composition for semiconductor packaging, a semiconductor adhesive film including the adhesive composition for semiconductor packaging, and a diced chip bonding film including the semiconductor adhesive film can be provided. The adhesive composition for semiconductor packaging can prevent cracks or warping from occurring in a semiconductor wafer even during the packaging process of applying a semiconductor wafer having a thin thickness, and is excellent in adhesive strength and embedding properties.

[0168] A semiconductor device and a method for manufacturing a semiconductor device having high reliability and internal structure stability even when including a semiconductor wafer having a thin thickness can be provided. The method can prevent cracks or warping from occurring in the semiconductor wafer even during the packaging process of applying a semiconductor wafer having a thin thickness and can achieve excellent adhesive strength and embedding properties between the substrate and the semiconductor wafer or between two or more semiconductor wafers. Brief Description of the Drawings

[0169] Figure 1It is a schematic diagram showing a semiconductor device with an overhang structure used in chip skew evaluation in a test example. Detailed Description

[0170] Hereinafter, for better understanding of the present disclosure, preferred embodiments are provided. However, the following embodiments are only for illustrating the present disclosure, and the present disclosure is not limited to them or restricted by them.

[0171] [Preparation Example: Preparation of Thermoplastic Acrylate Resin]

[0172] Preparation Example 1

[0173] (Preparation of Thermoplastic Acrylate Resin)

[0174] 40 g of butyl acrylate, 30 g of ethyl acrylate, 30 g of acrylonitrile, 5 g of methyl methacrylate, and 5 g of glycidyl methacrylate were mixed with 100 g of toluene, and then reacted at 80 °C for about 12 hours to synthesize an acrylate-based resin in which a glycidyl group was introduced as a side chain (weight average molecular weight: 1,000,000 g / mol, glass transition temperature: 15 °C).

[0175] Preparation Example 2

[0176] (Preparation of Thermoplastic Acrylate Resin)

[0177] 70 g of butyl acrylate, 25 g of acrylonitrile, 5 g of methyl methacrylate, and 10 g of glycidyl methacrylate were mixed with 100 g of toluene, and then reacted at 80 °C for about 12 hours to synthesize an acrylate-based resin in which a glycidyl group was introduced as a side chain (weight average molecular weight: 600,000 g / mol, glass transition temperature: -5 °C).

[0178] [Example: Preparation of Adhesive Composition for Semiconductor Packaging]

[0179] Examples 1 to 6

[0180] (1) Preparation of Adhesive Composition for Semiconductor Packaging

[0181] The components and contents shown in Table 1 below were applied and mixed with methyl ethyl ketone to obtain an adhesive composition for semiconductor packaging (solid content: 20 wt%).

[0182] (2) Production of Adhesive Film

[0183] An adhesive composition was applied to a release-treated polyethylene terephthalate film (thickness 38 μm) using a comma coater, and then dried at 110 °C for 3 minutes to obtain an adhesive film having an adhesive layer with a thickness of about 20 μm.

[0184] (3) Measurement of the melt viscosity of the adhesive film

[0185] The obtained adhesive film was laminated at 60 °C using a roll laminator to a thickness of 640 μm, and then formed into a circle with a diameter of 8 mm. Then, the melt viscosity of the adhesive film was measured using a TA Instruments ARES-G2. At this time, the melt viscosity was the viscosity value measured at 110 °C with a heating rate of 20 °C / minute applied at a shear rate of 5 Rad / second.

[0186] (4) Measurement of the storage modulus of the adhesive film at 130 °C

[0187] The obtained adhesive film was laminated at 60 °C using a roll laminator to a thickness of 640 μm to prepare a sample.

[0188] The prepared sample was placed in a pressure curing oven (PCO, available from CMT), and the temperature was raised from 25 °C to 125 °C under a pressure condition of 7 Kgf / cm 2 for 30 minutes. After the temperature was raised, the temperature was maintained at 125 °C for 30 minutes, and after the maintenance, it was cooled to 60 °C to effect curing.

[0189] Moreover, the sample that had undergone the curing process was formed into a square with a length of 17.5 mm and a width of 5.3 mm, processed into a measurement sample, and the storage modulus (G') according to temperature was measured using a DMA (Dynamic Mechanical Analyzer, TA Instruments DMA Q800) at a frequency of 1 Hz and a strain of 0.0% with a temperature increase rate of 10 °C / minute from -30 °C to 280 °C. Thus, the storage modulus (G') of the adhesive film at 130 °C was measured.

[0190] (5) Production of a dicing chip bonding film

[0191] The adhesive film produced in (2) above was transferred to a dicing film (a cohesive layer with a thickness of 10 μm and a polyolefin film with a thickness of 100 μm) to produce a dicing chip bonding film.

[0192] (6) Fabrication of a semiconductor device

[0193] After peeling the release-treated polyethylene terephthalate film from the above-produced diced chip bonding film, the prepared semiconductor wafer is pressurized and bonded onto the upper part of the adhesive layer, and a laser is focused inside the wafer to selectively form a modified portion. Then, the adhesive film attached to the semiconductor wafer is individualized by physical tension at a low temperature of -10°C.

[0194] The individualized wafer chips are bonded to a substrate or a wafer substrate using a chip bonder (Shinkawa, SPA-400). At this time, a short bonding is performed at 110°C for 0.5 seconds under the condition of about 1.5 Kgf / cm 2 . Then, curing is performed for 30 minutes at a temperature of 125°C and a pressure of 7 Kgf / cm 2 in a pressure oven (CMT, pressure curing oven PCO).

[0195] [Table 1]

[0196]

[0197] [Comparative Example]

[0198] An adhesive composition for semiconductor packaging is prepared in the same manner as in Example 1, except that the components and contents shown in Table 2 below are applied. Then, an adhesive film is produced using the adhesive composition in the same manner as in Example 1 and is used for manufacturing a diced chip bonding film and a semiconductor device.

[0199] [Table 2]

[0200]

[0201] The components listed in Table 1 and Table 2 above are as follows.

[0202] *EPPN-201L: Solid epoxy resin (Nippon Kayaku, epoxy equivalent: 190 g / equivalent)

[0203] *NC-2000L: Solid epoxy resin (Nippon Kayaku, epoxy equivalent: 237 g / equivalent)

[0204] *EOCN-104S: Solid epoxy resin (Nippon Kayaku, epoxy equivalent: 218 g / equivalent)

[0205] *NC-3000: Solid epoxy resin (Nippon Kayaku, epoxy equivalent: 275 g / equivalent)

[0206] *KDS-8170: Liquid epoxy resin (Kukdo Chemical, epoxy equivalent: 157 g / equivalent)

[0207] *CEL2021P: Liquid epoxy resin (DAICEL, epoxy equivalent: 130 g / equivalent)

[0208] *RE-310S: Liquid epoxy resin (Nippon Kayaku, epoxy equivalent: 180 g / equivalent)

[0209] *EP0408: Organic-inorganic hybrid epoxy resin having a repeating unit of Chemical Formula 1 (epoxy equivalent: 177 g / equivalent, epoxycyclohexyl POSS, (C 8 H 13 O) n (SiO 1.5 ) n , viscosity: 500 Pa.s, hybrid plastic)

[0210] *EP0409: Organic-inorganic hybrid epoxy resin having a repeating unit of Chemical Formula 1 (epoxy equivalent 167 g / equivalent, glycidyl POSS, (C 6 H 11 O 2 ) n (SiO 1.5 ) n , viscosity 48 Pa.s, hybrid plastic)

[0211] *GPH-65: Phenolic resin (Nippon Kayaku, hydroxyl equivalent: 198 g / equivalent, softening point: 65 °C)

[0212] *KA-1160: Phenolic resin (DIC, hydroxyl equivalent: 117 g / equivalent, softening point: 86 °C)

[0213] *KH-6021: Phenolic resin (DIC, hydroxyl equivalent: 121 g / equivalent, softening point: 133 °C)

[0214] *KPH-F3075: Phenolic resin (Kolon emulsifier, hydroxyl equivalent: 175 g / equivalent, softening point: 75 °C)

[0215] *YA-050C: Filler (Admatechs, spherical silica, average particle size: about 50 nm)

[0216] *2MZ-A: Imidazole curing accelerator (SHIKOKU)

[0217] [Test Example]

[0218] The following tests were conducted on the adhesive compositions, adhesive films, and semiconductor devices according to the examples and comparative examples, and the results are shown in Tables 3 and 4 below.

[0219] (1) Evaluation of chip separation

[0220] A semiconductor wafer (diameter: 12 inches, thickness: 500 μm) was subjected to backside polishing to produce a semiconductor wafer with a thickness of 100 μm.

[0221] After peeling the release-treated polyethylene terephthalate film from the diced chip bonding films produced in each of the examples and comparative examples, the prepared semiconductor wafer was pressed and bonded onto the upper part of the adhesive layer, and a laser was focused inside the wafer to selectively form modified portions. Then, a dicing method was used, which individualized the wafer together with the adhesive layer along the selectively modified lines by physical tension at a low temperature of -10°C. After dicing, the separation of the adhesive layer was confirmed for the semiconductor wafer and the diced chip bonding film.

[0222] If separation occurred in the adhesive layer, it was evaluated as a poor level; if no separation occurred, it was evaluated as a good level.

[0223] (2) Void evaluation

[0224] The semiconductor devices obtained in each of the examples and comparative examples were evaluated by scanning acoustic tomography (SAT). If the area occupied by voids inside the semiconductor device was 1% or less, it was evaluated as a good level; if the area exceeded 1%, it was evaluated as a poor level.

[0225] (3) Wafer crack evaluation

[0226] After subjecting the semiconductor devices obtained in each of the examples and comparative examples to epoxy molding and temperature cycle tests, the presence or absence of cracks in the wafers was observed on the cross-section using an optical microscope (SEM). If no cracks appeared, it was evaluated as a good level; if cracks appeared, it was evaluated as a poor level.

[0227] (4) Chip skew evaluation

[0228] A 20-μm-thick adhesive film obtained in each of the examples and comparative examples was bonded to a 60-μm semiconductor wafer, and each wafer was individualized. As Figure 1 shown, the semiconductor wafer chips were bonded to the base wafer to fabricate semiconductor devices having a 750-μm overhang structure.

[0229] After curing, the length of the overhang skew is measured and evaluated. If the height is within 2 μm, it is evaluated as a good level. If the height exceeds 2 μm, it is evaluated as a poor level.

[0230] (5) Reliability evaluation (thermal cycle test)

[0231] For each of the semiconductor devices obtained in the examples and comparative examples, 10 samples were prepared and processed under the conditions of a thermal cycle tester at -65°C to 150°C, where the lowest temperature and the highest temperature were each maintained for 45 minutes, and the presence or absence of delamination was evaluated.

[0232] After 500 cycles are completed, if none of the 10 samples have any delamination by scanning acoustic tomography (SAT), it is evaluated as a good level. If even one delamination is determined, it is evaluated as a poor level.

[0233] [Table 3]

[0234]

[0235] [Table 4]

[0236] Comparative Example 1 Comparative Example 2 Melt viscosity of the adhesive film (Pa·s) 57,000 2,300 Presence or absence of chip separation Poor Good Void Poor Good Presence or absence of wafer crack Poor Poor Chip skew (μm) 2.1 2.0 Reliability Poor Poor

[0237] Referring to Table 3, it is determined that the adhesive composition of the example or the adhesive film produced therefrom has a storage modulus at 130°C and a melt viscosity of 4,000 Pa·s or more measured after curing under the conditions of a temperature of 120°C to 300°C and a pressure of 0.5 Kgf / cm 2 to 10 Kgf / cm 2 or more.

[0238] It is determined that even during the packaging process of a semiconductor wafer with a thin thickness according to the example, cracks or warping in the semiconductor wafer can be prevented, excellent adhesion characteristics and embedding characteristics can be achieved, and in particular, no chip separation phenomenon and wafer crack phenomenon occur, and the chip skew of the experimental example is only 1.6 μm or less.

[0239] On the other hand, referring to Table 4, it is determined that the adhesive compositions according to Comparative Example 1 and Comparative Example 2 cause void defects and poor connection conditions, and cannot pass all the thermal cycle tests. It is also determined that a chip separation phenomenon and a wafer crack phenomenon occur, and the chip skew of the experimental example reaches 2.0 μm or more.

Claims

1. An adhesive composition for semiconductor packaging, comprising: Thermoplastic resins, thermosetting resins and curing agents, At a temperature of 120°C to 300°C and 0.5Kgf / cm 2 Up to 10Kgf / cm 2 The storage modulus at 130° C. measured after curing under a pressure of 300° C. is 30 MPa or more.

2. The adhesive composition for semiconductor packaging according to claim 1, wherein: At temperatures between 120°C and 300°C and 0.5Kgf / cm 2 Up to 10Kgf / cm 2 Cured under the pressure of 7Kgf / cm 2 The curing is carried out under pressure conditions, and the curing includes: A step of increasing the temperature from 25°C to 125°C for 30 minutes, a step of maintaining the temperature at 125°C for 30 minutes after the temperature increase, and a step of decreasing the temperature to 60°C after the maintaining.

3. The adhesive composition for semiconductor packaging according to claim 1, wherein: The adhesive composition for semiconductor encapsulation does not contain an inorganic filler, or The adhesive composition for semiconductor encapsulation further includes an inorganic filler in an amount of 4.9 wt % or less.

4. The adhesive composition for semiconductor packaging according to claim 1, wherein: The adhesive composition for semiconductor encapsulation is used for the purpose of connecting a substrate and a semiconductor wafer having a thickness of 100 um or less, or for the purpose of connecting two or more semiconductor wafers having a thickness of 100 um or less.

5. The adhesive composition for semiconductor packaging according to claim 1, wherein: The adhesive composition for semiconductor encapsulation is subjected to a temperature of 120° C. to 300° C. and a pressure of 0.5 Kgf / cm 2 Up to 10Kgf / cm 2 The storage modulus at 130° C. measured after curing under a pressure of 50 to 500 MPa is 50 MPa to 500 MPa.

6. The adhesive composition for semiconductor packaging according to claim 1, wherein: The adhesive composition for semiconductor encapsulation has a melt viscosity of 3,000 to 50,000 Pa·s measured at 110° C. by applying a shear rate of 5 rad / sec.

7. The adhesive composition for semiconductor packaging according to claim 1, wherein: The thermoplastic resin includes a (meth)acrylate-based resin including a repeating unit substituted with a glycidyl group or an epoxy group.

8. The adhesive composition for semiconductor packaging according to claim 1, wherein: The thermoplastic resin comprises: A (meth)acrylate-based resin containing a glycidyl- or epoxy-substituted repeating unit and having a glass transition temperature of -20°C to 5°C; and A (meth)acrylate-based resin containing a glycidyl- or epoxy-substituted repeating unit and having a glass transition temperature of 7°C to 30°C.

9. The adhesive composition for semiconductor packaging according to claim 1, wherein: The thermosetting resin includes a silsesquioxane compound substituted with a glycidyl group or an epoxy group.

10. The adhesive composition for semiconductor packaging according to claim 1, wherein: The thermosetting resin further comprises at least one epoxy resin selected from the group consisting of bisphenol-based epoxy resins, biphenyl-based epoxy resins, naphthalene-based epoxy resins, fluorene-based epoxy resins, phenol novolac-based epoxy resins, cresol novolac-based epoxy resins, neophenol-based epoxy resins, trihydroxyphenylmethane-based epoxy resins, tetraphenylmethane-based epoxy resins, dicyclopentadiene-type epoxy resins, and dicyclopentadiene-modified phenol-type epoxy resins.

11. The adhesive composition for semiconductor packaging according to claim 1, wherein: The curing agent includes at least one selected from the group consisting of an amine-based curing agent, a phenol-based curing agent, and an anhydride-based curing agent.

12. The adhesive composition for semiconductor packaging according to claim 1, The adhesive composition for semiconductor encapsulation includes 5 to 500 parts by weight of the thermoplastic resin and 1 to 150 parts by weight of the curing agent, relative to 100 parts by weight of the thermosetting resin. 13 . An adhesive film for a semiconductor, comprising the adhesive composition for semiconductor encapsulation according to claim 1 .

14. A dicing die bonding film, comprising: Basement membrane; forming a cohesive layer on the base film; and An adhesive layer formed on the cohesive layer and comprising the adhesive film for semiconductor according to claim 13.

15. A semiconductor device comprising: substrate; one or more semiconductor wafers formed on the substrate; and an adhesive layer between the substrate and the semiconductor wafer formed on the substrate, or between two or more semiconductor wafers among the semiconductor wafers, wherein the adhesive layer comprises a cured product of the adhesive composition for semiconductor encapsulation according to claim 1 .

16. The semiconductor device according to claim 15, wherein: The thickness of each of the semiconductor wafers is 100 um or less.

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