A single crystal silicon etching device and etching method

Abstract

The application discloses a single crystal silicon etching device and etching method, which comprises a spindle, an etching pool body, the spindle can rotate along the spindle axis, the spindle is fixedly installed with a sleeve seat, the sleeve seat is installed with a shaft body, the shaft body can rotate along the shaft body axis and can rotate around the spindle axis, the shaft body is fixedly installed with a connecting seat, the connecting seat is coaxially arranged with the shaft body, the connecting seat is fixedly installed with a material seat, the material seat can rotate around the connecting seat axis, the material seat is inserted into the connecting seat, the material seat is provided with a groove one, the groove one is located on the side of the material seat away from the connecting seat, the material seat is further provided with a hole one, the hole one is communicated with the groove one, the shaft body is fixedly installed with a fan blade, and the fan blade rotates to make the fluid flow to the hole one. The application provides a single crystal silicon etching device and etching method, improves the etching efficiency, and reduces the pollution.

Description

Technical Field

[0001] This invention relates to the field of single-crystal silicon etching equipment technology, and more specifically, to a single-crystal silicon etching apparatus and etching method. Background Technology

[0002] Monocrystalline silicon substrates have a rectangular plate-like structure. After a texturing process, one side of the substrate becomes a textured surface, while the other sides require etching to remove the surface N-layer. Currently, monocrystalline silicon etching processes typically employ wet etching, with the side opposite the textured surface being the primary etching area. However, current etching equipment aligns the etching surface of the monocrystalline silicon substrate with the flow direction of the liquid medium, resulting in relatively low etching efficiency. Summary of the Invention

[0003] The purpose of this invention is to overcome the shortcomings of the prior art and provide a single-crystal silicon etching apparatus and etching method to improve etching efficiency and reduce pollution.

[0004] To achieve the above objectives, the present invention adopts the following technical solution: a single-crystal silicon etching apparatus, comprising a spindle and an etching pool body. The spindle is rotatable along its own axis. A sleeve is fixedly installed on the spindle, and a shaft body is installed on the sleeve. The shaft body is rotatable along its own axis and can rotate around the axis of the spindle. A connecting seat is fixedly installed on the shaft body, and the connecting seat is coaxially arranged with the shaft body. A material seat is fixedly installed on the connecting seat, and the material seat is rotatable around the axis of the connecting seat. The material seat is inserted into the connecting seat. The material seat has a groove, which is located on the side of the material seat away from the connecting seat. The material seat also has a channel, which communicates with the groove. A fan blade is fixedly installed on the shaft body, and the fan blade rotates to allow fluid to flow into the channel. A fixing ring is fixedly installed on the side of the material seat away from the connecting seat. The fixing ring has a through groove, which corresponds to the groove and communicates with the corresponding groove. Along the axial direction of the connecting seat, the width of the through groove is smaller than the width of the groove, and the through groove is located on the side of the corresponding groove closer to the channel.

[0005] The invention is further configured to include a second air ring, which is externally connected to an air pump. The second air ring has a second through hole. When the second through hole is directly opposite the first channel, the airflow ejected from the second through hole flows into the first channel. The invention also includes a push plate. The material seat is also provided with a second channel. The second channel is located on the side of the first tank away from the first channel. The second channel is coaxial with the first channel. The push plate can move axially along the second channel. The push plate can pass through the second channel and be inserted into the first tank.

[0006] The invention is further configured such that the material seat is also provided with a third channel, the third channel being connected to the first trough, and the side of the third channel away from the side connected to the first trough penetrating the outer wall of the material seat.

[0007] The present invention is further configured such that the shaft is inserted into the sleeve, the shaft and the sleeve are connected by a bearing, the sleeve is located on both sides of the shaft, and the shaft axis is parallel to the sleeve axis.

[0008] The present invention is further configured such that multiple material seats are evenly distributed along the circumference of the connecting seat, and a fixing ring is fitted into multiple material seats, with the outer wall of the material seat away from the connecting seat being attached to and fixed to the inner wall of the fixing ring.

[0009] The invention is further configured such that air ring two is fixedly connected to air ring one, air ring one has a cavity one and a through hole one, cavity one is connected to an air pump, and through hole one is connected to cavity one; air ring two has a cavity two, cavity two is connected to through hole two, and the two ends of through hole one are connected to cavity one and cavity two respectively; when the material seat is transferred to the highest position, air ring two is located directly above the shaft, and through hole two is directly opposite channel one.

[0010] The present invention is further configured such that: a plurality of through holes are provided, and the diameter of the through holes gradually increases along the direction away from the gas inlet cavity; and a plurality of through holes are provided, and the diameters are the same.

[0011] The invention is further configured to include a cylinder, which is axially movable along the shaft. The cylinder has an opening. When the shaft is moved to its highest position, the opening of the cylinder can fit into the material seat. A connecting pipe is connected to the side of the cylinder away from its opening, and the connecting pipe is connected to a material collecting cylinder.

[0012] The present invention is further configured such that a driving component four is installed on the inner wall of the bottom of the cylinder, and the output end of the driving component four is fixedly connected to a push plate.

[0013] The present invention also adopts the following technical solution: an etching method, which uses a single-crystal silicon etching device to etch a silicon substrate, comprising the following steps:

[0014] ① Feeding: The shaft rotates around the main shaft to the upper limit position, and drives the shaft to rotate around its own axis until one of the through slots is in an upward position. The silicon plate is put in from the top of the through slot. The silicon plate passes through the through slot and falls into the first tank. The bottom inner wall of the first tank abuts against the silicon plate. Gas is ejected from the second through hole to tilt the silicon plate. The side of the silicon plate away from the bottom inner wall of the first tank is offset from the through slot.

[0015] ②Etching: The shaft rotates around the lower limit position of the main shaft, driving the shaft to rotate around its own axis. The fan blades rotate to make the etching fluid medium flow. Under the action of the etching fluid medium flow, the surface of the silicon plate is perpendicular to the flow direction of the etching fluid medium, and one side of the silicon plate is impacted by the etching fluid medium.

[0016] ③ Plate surface etching medium cleaning: The shaft rotates around the main shaft to the upper limit position, the cylinder is fitted into the material seat, and the shaft is driven to rotate around its own axis. Gas is ejected from the second through hole. When the second through hole is directly opposite the first channel, the gas ejected from the second through hole acts on the liquid medium on the surface of the crystalline silicon plate, so that the liquid medium is suspended in the air in the form of small droplets. Under the action of the wind force generated by the rotation of the fan blades, the liquid medium in the form of small droplets is blown into the connecting pipe, and then re-aggregates into liquid in the connecting pipe and gathers in the collection cylinder for recycling.

[0017] ④ Material dropping: When the material seat on the upper shaft rotates to the lower end, the push plate extends into the groove and pushes the silicon plate towards the through groove. The push plate extends out of the groove to separate from the silicon plate, and the silicon plate falls downward under the action of gravity.

[0018] In summary, the present invention has the following beneficial effects:

[0019] During the etching process, the crystalline silicon substrate's etched surface directly faces the flow of the etching liquid medium, resulting in direct frontal impact from the fluid and accelerated etching efficiency. After etching, the substrate detaches from the etching liquid medium and rapidly moves towards the substrate surface for cleaning. Driven by the airflow generated by the rotating fan blades, the liquid medium, in the form of small droplets, is blown into the connecting pipe, where it recombines into liquid and collects in the collection cylinder for recycling. This process reduces fluid contamination and improves utilization. Attached Figure Description

[0020] Figure 1 This is a cross-sectional schematic diagram of an embodiment;

[0021] Figure 2 for Figure 1 Enlarged view of point A in the middle;

[0022] Figure 3 for Figure 1 Enlarged view of point B in the middle;

[0023] Figure 4 for Figure 3 A partial sectional view along the MM direction;

[0024] Figure 5 for Figure 3 State of medium-crystal silicon plates Figure 1 ;

[0025] Figure 6 for Figure 3 State of medium-crystal silicon plates Figure 2 .

[0026] Reference numerals: Main shaft 1, support base 11, bearing 12, drive component 13, gear one 131, gear two 14, sleeve 2, ring body 21, drive component two 22, shaft body 3, extension shaft 31, gear pair 32, fan blade 33, connecting seat 34, material holder 35, groove one 351, channel one 352, channel two 353, channel three 354, fixing ring 36, through groove 361, silicon wafer 4, fixing frame one 5. Support 51, Air Ring 1 52, Cavity 1 521, Through Hole 1 522, Air Ring 2 53, Cavity 2 531, Through Hole 2 532, Air Nozzle 54, Fixing Frame 2 6, Groove 2 61, Slide Rail 62, Slider 63, Drive Component 3 7, Connecting Block 71, Cylinder 72, Drive Component 4 721, Push Plate 722, Connecting Port 723, Connecting Pipe 73, Collection Cylinder 74, Conveyor Belt 8, Etching Pool 9. Detailed Implementation

[0027] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0028] like Figures 1-6 As shown, this embodiment discloses a single-crystal silicon etching apparatus, including a spindle 1 and an etching pool 9, as follows: Figure 1 As shown, support seats 11 are installed at both ends of the spindle 1 along its axial direction. The spindle 1 is inserted into the support seats 11 and connected by bearings 12. A drive component 13 is installed on the support seat 11. The drive component 13 is a motor. A gear 131 is connected to the output end of the drive component 13. Gear 131 meshes with gear 14. Gear 14 is fitted onto the spindle 1. The spindle 1 is driven to rotate by the drive component 13. The spindle 1 is located above the etching pool 9. The etching pool 9 contains liquid etching medium. The silicon wafer 4 is etched by the liquid etching medium. The silicon wafer 4 is a rectangular sheet structure. Before etching, one side of the silicon wafer 4 has been texturized to form a textured surface. The etching mainly targets the other side to remove the N-layer on its surface by using the etching medium.

[0029] like Figure 1As shown, a sleeve 2 is fixedly mounted on the main shaft 1. The main shaft 1 is inserted into the sleeve 2. The sleeve 2 includes a ring 21, which is a circular ring structure. Shafts 3 are mounted on both sides of the ring 21. The axis of the shafts 3 is parallel to the axis of the sleeve 2. The shafts 3 can rotate along their own axis and can rotate around the axis of the main shaft 1. Specifically, the shafts 3 include an extension shaft 31, which is inserted into the ring 21 and connected by bearings. A second drive component 22 is mounted on the sleeve 2. The second drive component 22 is a waterproof motor. A gear pair 32 is connected to the output end of the second drive component 22. The gear pair 32 is connected to the extension shaft 31, and the extension shaft 31 is driven to rotate by the second drive component 22.

[0030] like Figure 1 As shown, a connecting seat 34 is fixedly installed on the shaft 3. The connecting seat 34 is coaxially arranged with the shaft 3 and is combined with... Figure 3 A material holder 35 is fixedly mounted on the connecting seat 34. Multiple material holders 35 are evenly distributed around the circumference of the connecting seat 34, and each material holder 35 can rotate around the axis of the connecting seat 34. The material holder 35 is inserted into the connecting seat 34, and then... Figure 3 , Figure 4 The material holder 35 has a groove 351 located on the side of the material holder 35 away from the connecting seat 34. A fixing ring 36 is fixedly installed on the side of the material holder 35 away from the connecting seat 34. The fixing ring 36 is fitted onto multiple material holders 35, and the outer wall of the side of the material holder 35 away from the connecting seat 34 is in contact with and fixed to the inner wall of the fixing ring 36. The fixing ring 36 has a through groove 361, which is provided one-to-one with the groove 351 and communicates with the corresponding groove 351. The crystalline silicon plate 4 is placed into the groove 351 through the through groove 361.

[0031] Combination Figure 3 , Figure 4 The material holder 35 is also provided with channel one 352 and channel two 353, both of which are connected to the tank body 351. Channel one 352 and channel two 353 are located on the left and right sides of the tank body 351 respectively, and channel two 353 is coaxially arranged with channel one 352. The material holder 35 is also provided with channel three 354, which is connected to the tank body 351. The side of channel three 354 away from the side connected to the tank body 351 extends through the outer wall of the material holder 35.

[0032] like Figure 3 As shown, along the axial direction of the connecting seat 34, the width of the through groove 361 is smaller than the width of the groove body 351, and the through groove 361 is located on the side of the corresponding groove body 351 near the channel 352.

[0033] like Figure 1 As shown, it also includes a fixing frame 5, which is equipped with a bracket 51, combined with... Figure 2A first air ring 52 is fixedly installed on the bracket 51, and a second air ring 53 is fixedly connected to the first air ring 52. The first air ring 52 has a cavity 521 and a through hole 522. The top of the cavity 521 is connected to an external air pump through an air nozzle 54. The air nozzle 54 is installed on the top of the first air ring 52, and the through hole 522 is connected to the cavity 521.

[0034] The second air ring 53 has a second cavity 531 and a second through hole 532. The second cavity 531 and the second through hole 532 are connected. The two ends of the first through hole 522 are connected to the first cavity 521 and the second cavity 531, respectively. When the material seat 35 is moved to the highest position, the second air ring 53 is located directly above the shaft 3, and the second through hole 532 is directly opposite the first channel 352. The airflow ejected from the second through hole 532 flows into the first channel 352. Figure 6 As shown, when the material holder 35 is moved to the highest position and the through groove 361 is facing upward, the silicon plate 4 is placed in. Under the action of airflow, the silicon plate 4 is tilted to the right due to the frictional resistance at the bottom, so that the upper end of the silicon plate 4 is misaligned with the through groove 361. In this position of the silicon plate 4 and the through groove 361, the material holder 35 continues to rotate until the through groove 361 is facing downward, and the silicon plate 4 will not detach from the material holder 35 from the through groove 361.

[0035] After etching of silicon substrate 4 is completed, residual dielectric on the surface of silicon substrate 4 is cleaned by air jetting through through-hole 2 (532). Figure 2 As shown, multiple through holes 522 are provided, and they are arranged along the direction away from the end of the gas inlet cavity 521 (i.e., Figure 2 (From the bottom up), the diameter of through-hole 522 gradually increases, and multiple through-holes 532 with the same diameter are provided. The gas inlet of cavity 521 is located at the upper end. When the airflow enters cavity 521, due to the small diameter of the upper through-hole 522, the gas flow resistance is large, making the gas easy to sink. This makes the gas distribution in cavity 531 more uniform. Finally, the gas sprayed out from through-hole 522 and acts on the surface of the silicon wafer 4 with better uniformity, higher airflow utilization, and improved cleaning effect of the silicon wafer 4 surface.

[0036] The shaft 3 is fixedly mounted with fan blades 33. The fan blades 33 rotate to make the fluid (i.e., the etching medium) flow into the channel 352. As the fluid flows, the fluid pushes... Figure 6 The crystalline silicon plate 4 in the middle is used to form Figure 3 In the positional state of the silicon wafer 4, the etched surface is directly impacted by the fluid, thereby improving efficiency.

[0037] like Figure 1 As shown, the single-crystal silicon etching apparatus also includes a cylindrical body 72, which is capable of moving along the axial direction of the shaft 3 (i.e., Figure 2(Move left and right). Specifically, the fixed frame 2 6 is equipped with a driving component 3 7, and a connecting block 71 is installed at the output end of the driving component 3 7. The fixed frame 2 6 is provided with a groove 2 61. The connecting block 71 passes through the groove 2 61 and is fixedly installed with a slider 63. A slide rail 62 is installed at the bottom of the fixed frame 2 6. The slider 63 is slidably connected to the slide rail 62. The cylinder 72 is fixedly connected to the slider 63.

[0038] like Figure 1 As shown, the cylinder 72 has an opening on its left side. When the shaft 3 is moved to its highest position, the opening of the cylinder 72 can fit into the material seat 35. The cylinder 72 has a connecting port 723 on the side away from its opening, and the connecting port 723 is connected to a connecting pipe 73, which in turn is connected to a collecting cylinder 74. Combined with... Figures 1-3 The gas ejected from the through hole 532 acts on the liquid medium on the surface of the crystalline silicon plate 4, causing the liquid medium to be suspended in the air in the form of small droplets. Under the action of the wind force generated by the rotation of the fan blade 33, the liquid medium in the form of small droplets is blown into the connecting pipe 73, and then re-aggregates into liquid in the connecting pipe 73 and collects in the collection cylinder 74 for recycling, so as to reduce the pollution of the fluid medium and improve its utilization rate.

[0039] like Figure 1 As shown, a drive component 721 is installed on the inner wall of the bottom of the cylinder 72, and the output end of the drive component 721 is fixedly connected to a push plate 722. The push plate 722 can move axially along the channel 353, and can pass through the channel 353 and be inserted into the groove 351, combined with... Figure 4 With the channel 361 facing downwards, the silicon wafer 4 is pushed by the pusher plate 722, causing the silicon wafer 4 to fall downwards from the channel 361 and exit onto the conveyor belt 8 (e.g., Figure 1 As shown), the conveyor belt 8 is in the horizontal plane and perpendicular to the axis of the main shaft 1.

[0040] The etching method of the above-mentioned single-crystal silicon etching device is as follows:

[0041] ① Feeding: such as Figure 1 As shown, shaft 3 rotates around main shaft 1 to its upper limit position, combined with... Figure 4 , Figure 5 The drive shaft 3 rotates around its own axis until one of the through slots 361 is facing upwards. A silicon wafer 4 is placed from the top of this through slot 361. The silicon wafer 4 passes through the through slot 361 and falls into the first trough 351. The bottom inner wall of the first trough 351 abuts against the silicon wafer 4. The right side of the silicon wafer 4 is textured, facing the second hole 353, and the left side of the silicon wafer 4 faces the first hole 352. Figure 2 , Figure 6Gas is ejected from the second through hole 532 to tilt the silicon plate 4. The side of the silicon plate 4 away from the bottom inner wall of the first tank 351 is offset from the through groove 361 to prevent the silicon plate 4 from detaching from the through groove 361 when it rotates downward.

[0042] ②Etching: The shaft 3 rotates to its lower limit position around the main shaft 1, driving the shaft 3 to rotate around its own axis. The fan blades 33 rotate to generate flow of the etching fluid medium, such as... Figure 1 , Figure 3 , Figure 6 As shown, the silicon wafer 4 forms under the action of the etching fluid medium flow. Figure 3 As shown in the diagram, the left side of the silicon wafer 4 is perpendicular to the flow direction of the etching fluid medium. The left side of the silicon wafer 4 is the etching surface, which is directly impacted by the etching fluid medium and quickly completes the etching. The etching fluid medium that enters the tank 351 can flow out through the channel 354.

[0043] ③ Cleaning of etching media on the board surface: such as Figure 1 As shown, the shaft 3 rotates around the main shaft 1 to the upper limit position, the cylinder 72 is fitted into the material seat 35, and the shaft 3 is driven to rotate around its own axis. Gas is ejected from the second through hole 532. When the second through hole 532 is directly opposite the first channel 352, the gas ejected from the second through hole 532 acts on the liquid medium on the surface of the crystalline silicon plate 4, so that the liquid medium is suspended in the air in the form of small droplets. Under the action of the wind force generated by the rotation of the fan blade 33, the liquid medium in the form of small droplets is blown into the connecting pipe 73, and re-aggregates into liquid in the connecting pipe 73 and gathers in the collection cylinder 74 for recycling, so as to reduce the pollution of the fluid medium and improve its utilization rate.

[0044] ④ Material dropping: When the material seat 35 on the upper shaft 3 rotates to the lower end, the push plate 722 extends into the groove 351 to push the silicon plate 4 towards the through groove 361. The push plate 722 extends out of the groove 351 to separate from the silicon plate 4. The silicon plate 4 falls downward under the action of gravity and enters the conveyor belt 8 for transmission.

[0045] The above description is merely a preferred embodiment of the present invention. The scope of protection of the present invention is not limited to the above embodiments. All technical solutions falling within the scope of the present invention's concept are within the scope of protection of the present invention. It should be noted that for those skilled in the art, any improvements and modifications made without departing from the principle of the present invention should also be considered within the scope of protection of the present invention.

Claims

1. A single crystal silicon etching apparatus, characterized by comprising: Including the main shaft (1), etching pool pool body (9), the main shaft (1) can rotate along its axis, the main shaft (1) is fixedly installed with the sleeve (2), the sleeve (2) is installed with the shaft body (3), the shaft body (3) can rotate along its axis and can rotate around the main shaft (1) axis, the shaft body (3) is fixedly installed with the connecting seat (34), the connecting seat (34) is coaxially arranged with the shaft body (3), the connecting seat (34) is fixedly installed with the material seat (35), the material seat (35) can rotate around the connecting seat (34) axis, the material seat (35) is inserted into the connecting seat (34), the material seat (35) is provided with groove one (351), the groove one (351) is located on the side of the material seat (35) away from the connecting seat (34), the material seat (35) is also provided with hole one (352), the hole one (352) is communicated with the groove one (351), the shaft body (3) is fixedly installed with the fan blade (33), the fan blade (33) rotates to make the fluid flow to the hole one (352); The material seat (35) is fixedly installed with the fixed ring (36) on the side away from the connecting seat (34), the fixed ring (36) is provided with a through groove (361), the through groove (361) is arranged one by one with the groove one (351), the through groove (361) is communicated with the corresponding groove one (351), along the axial direction of the connecting seat (34), the width of the through groove (361) is less than the width of the groove one (351), the through groove (361) is located on the side of the corresponding groove one (351) close to the hole one (352).

2. The single crystal silicon etching apparatus according to claim 1, wherein Also including the gas ring two (53), the gas ring two (53) is circumscribed by the air pump, the gas ring two (53) is provided with a through hole two (532), when the through hole two (532) is opposite to the hole one (352), the airflow sprayed by the through hole two (532) flows into the hole one (352); Also including the push plate (722), the material seat (35) is also provided with hole two (353), the hole two (353) is located on the side of the groove one (351) away from the hole one (352), the hole two (353) is coaxial with the hole one (352), the push plate (722) can move along the axial direction of the hole two (353), the push plate (722) can pass through the hole two (353) and insert into the groove one (351).

3. The single crystal silicon etching apparatus of claim 1, wherein The material seat (35) is also provided with hole three (354), the hole three (354) is communicated with the groove one (351), the hole three (354) penetrates the outer wall of the material seat (35) away from the side communicated with the groove one (351).

4. The single crystal silicon etching apparatus of claim 1, wherein The shaft body (3) is inserted into the sleeve (2), the shaft body (3) and the sleeve (2) are connected through the bearing, the sleeve (2) is located on both sides of the shaft body (3), the axis of the shaft body (3) is parallel to the axis of the sleeve (2).

5. The single crystal silicon etching apparatus of claim 1, wherein The material seat (35) is circumferentially and evenly distributed with a plurality of connecting seats (34), the fixing ring (36) is sleeved into a plurality of material seats (35), and the outer wall of the material seat (35) away from the connecting seat (34) side is attached to and fixed with the inner wall of the fixing ring (36).

6. The single crystal silicon etching apparatus of claim 2, wherein The air ring two (53) is fixedly connected with the air ring one (52), the air ring one (52) is provided with a cavity one (521) and a through hole one (522), the cavity one (521) is communicated with the air pump, the through hole one (522) is communicated with the cavity one (521), the air ring two (53) is provided with a cavity two (531), the cavity two (531) is communicated with the through hole two (532), and the through hole one (522) is respectively communicated with the cavity one (521) and the cavity two (531) at two ends.

7. The single crystal silicon etching apparatus of claim 6, wherein The through hole one (522) is provided with a plurality of through holes, and the hole diameter of the through hole one (522) gradually increases in the direction away from the gas inlet cavity one (521) end.

8. The single crystal silicon etching apparatus of claim 2, wherein Further comprising a cylinder body (72), the cylinder body (72) can move axially along the shaft body (3), the cylinder body (72) is provided with an opening, when the shaft body (3) moves to the highest position, the opening of the cylinder body (72) can be sleeved into the material seat (35), and the side of the cylinder body (72) away from the opening is communicated with a connecting pipe (73), and the connecting pipe (73) is communicated with a material collecting cylinder (74).

9. The single crystal silicon etching apparatus of claim 8, wherein The driving component four (721) is mounted on the inner wall of the bottom of the cylinder body (72), and the output end of the driving component four (721) is fixedly connected with the push plate (722).

10. An etching method, wherein a single crystal silicon etching device according to any one of claims 1 to 9 is used to etch a single crystal silicon plate (4), characterized in that, The method comprises the following steps: ①Feeding: the shaft body (3) rotates to the upper end limit position around the main shaft (1), the shaft body (3) is driven to rotate around the shaft body to the state that one of the through grooves (361) faces upward, the crystalline silicon plate (4) is placed from the top of the through groove (361), the crystalline silicon plate (4) passes through the through groove (361) and falls into the groove body one (351), the inner wall of the bottom of the groove body one (351) abuts against the crystalline silicon plate (4), the through hole two (532) sprays gas, so that the crystalline silicon plate (4) is poured, and the side of the crystalline silicon plate (4) away from the inner wall of the bottom of the groove body one (351) is staggered with the through groove (361); ②Etching: the shaft body (3) rotates to the lower end limit position around the main shaft (1), the shaft body (3) is driven to rotate around the shaft body, the fan blade (33) rotates to make the etching fluid medium flow, under the action of the etching fluid medium flow, the plate surface of the crystalline silicon plate (4) is perpendicular to the flow direction of the etching fluid medium, and one side of the plate surface of the crystalline silicon plate (4) is impacted by the etching fluid medium; ③Plate etching medium cleaning: the shaft (3) rotates around the main shaft (1) to the upper end limit position, the cylinder (72) is sleeved into the material seat (35), the driving shaft (3) rotates around its own axis, the through hole two (532) sprays gas, when the through hole two (532) is opposite to the channel one (352), the gas sprayed from the through hole two (532) acts on the liquid medium of the surface of the crystalline silicon plate (4), so that the liquid medium is suspended in the air in the form of small droplets, under the action of the wind generated by the fan (33) rotation, the liquid medium in the form of small droplets is blown into the connecting pipe (73), and is re-aggregated into liquid in the connecting pipe (73) and is collected in the collecting cylinder (74) for recycling; ④Material falling: when the material seat (35) on the upper shaft (3) rotates to the lower end, the push plate (722) extends into the groove one (351) to push the crystalline silicon plate (4) to the direction of the through groove (361), the push plate (722) extends out of the groove one (351) to separate from the crystalline silicon plate (4), the crystalline silicon plate (4) falls downward under the action of gravity.

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