Thermoelectric performance testing device for suspended island micro-motor system and preparation method of thermoelectric performance testing device

Abstract

The invention provides a thermoelectric performance testing device for a suspended island micromotor system and a preparation method, and can be applied to the technical field of semiconductor devices. The suspended island structure comprises a first suspended island, a central suspended island and a third suspended island, and the first suspended island and the second suspended island are symmetrically suspended on the substrate about the central suspended island; the first metal assemblies are arranged on the first suspended island, the central suspended island and the second suspended island respectively; wherein under the condition that a to-be-measured target is placed between the first suspended island and the central suspended island, a first signal is obtained through a first metal assembly corresponding to the first suspended island, a second signal is obtained through a second metal assembly corresponding to the second suspended island, and differential calculation is performed on the first signal and the second signal; and determining a thermoelectric performance test result of the to-be-tested target based on a difference calculation result.

Description

Technical Field

[0001] The present disclosure relates to the technical field of semiconductor devices, and more particularly, to a thermoelectric performance testing device for a suspended island micro-motor system and a preparation method thereof. Background Art

[0002] As an important pillar of modern technology, Micro-Electro-Mechanical System (MEMS) technology has demonstrated its unique advantages and broad application prospects in many fields. With the continuous progress of technology, the size of MEMS devices has been continuously reduced, gradually entering the micro-nano scale range. However, the reduction in size has also brought a series of new challenges. In particular, the thermal transport characteristics of nanomaterials have had a profound impact on the reliability and working efficiency of electronic devices and systems. At the micro-nano scale, the thermal conduction mechanism of materials is significantly different from that at the macroscopic scale, and phenomena such as quantum effects and phonon scattering become particularly prominent. These factors make it difficult to directly apply traditional thermal management methods and theories to MEMS devices.

[0003] Based on this, researchers have proposed suspended MEMS devices to meet the requirements of the development of MEMS technology. However, there are still many problems in the existing suspended MEMS thermoelectric testing devices in terms of preparation process, testing accuracy, stability, and applicable range. Summary of the Invention

[0004] (I) Technical Problems to be Solved

[0005] The present disclosure provides a thermoelectric performance testing device for a suspended island micro-motor system and a preparation method thereof, which are used to at least partially solve one of the above technical problems.

[0006] (II) Technical Solutions

[0007] According to a first aspect of the present disclosure, there is provided a thermoelectric performance testing device for a suspended island micro-motor system, including: a substrate; a suspended island structure including a first suspended island, a central suspended island, and a third suspended island, the first suspended island and the second suspended island being symmetrically and suspendedly arranged on the substrate with respect to the central suspended island; and a plurality of first metal components, one of the first metal components being provided on each of the first suspended island, the central suspended island, and the second suspended island; wherein, when a target to be measured is placed between the first suspended island and the central suspended island, a first signal is obtained through the first metal component corresponding to the first suspended island, a second signal is obtained through the second metal component corresponding to the second suspended island, the first signal and the second signal are subjected to differential calculation, and a thermoelectric performance test result of the target to be measured is determined based on the result of the differential calculation.

[0008] Optionally, the first signal is the resistance information of the first metal component on the first suspended island, and the second signal is the resistance information of the first metal component on the second suspended island; determining the thermoelectric performance test result of the target to be measured based on the result of differential calculation includes: determining the temperature rise information of the first suspended island according to the differential calculation result, and determining the thermoelectric performance test result of the target to be measured according to the temperature rise information.

[0009] Optionally, the suspended island structure further includes: a silicon nitride thin film, each suspended island includes a silicon nitride thin film, and the first metal component is disposed within the silicon nitride thin film.

[0010] Optionally, the device further includes: cantilevers, respectively connected to the suspended island and the substrate, for suspending the silicon nitride thin film in the suspended island above the substrate; a plurality of second metal components, one second component is correspondingly disposed for each suspended island, and the second component is located above the substrate and the cantilever, for assisting the first metal component to perform a thermoelectric performance test on the target to be measured.

[0011] Optionally, the first suspended island, the central suspended island, and the second suspended island are arranged at equal intervals; the first suspended island and the central suspended island are mirror-symmetrical; the second suspended island and the first suspended island are mirror-symmetrical.

[0012] Optionally, two cantilever groups are correspondingly provided for each suspended island, the two cantilever groups are symmetrically disposed on both sides of the suspended island, and four cantilevers are provided in each cantilever group, and the four cantilevers are evenly spaced.

[0013] Optionally, the first metal component includes: a metal coil, disposed within the silicon nitride thin film of the suspended island; a metal wire, disposed on the silicon nitride thin film of the suspended island.

[0014] Optionally, the second metal component includes: a metal electrode, disposed on the substrate; a metal lead, disposed on the cantilever, for connecting the metal wire, the metal coil, and the metal electrode.

[0015] Optionally, the metal leads correspond to the cantilevers, one metal lead is provided on each cantilever, and each metal lead is correspondingly connected to a metal electrode; wherein, one metal lead in each cantilever group is used to connect the metal wire and the metal electrode, and the other three metal leads are used to connect the metal coil and the metal electrode.

[0016] According to a second aspect of the present disclosure, there is provided a method for manufacturing a device for testing the thermoelectric performance of a suspended island micromotor system, for manufacturing the above-mentioned device for testing thermoelectric performance, the method includes: growing a silicon nitride thin film on the surface of the substrate; growing a metal component on the surface of the silicon nitride thin film; etching a partial region in the silicon nitride thin film to form a suspended island structure and a cantilever structure; etching the substrate to obtain the test device.

[0017] (III) Advantageous Effects

[0018] The thermoelectric performance test device of the suspended island micro-motor system provided by the present disclosure has at least the following beneficial effects:

[0019] In the suspended island structure, three symmetric suspended islands are provided. The physical environments of the suspended islands on both sides are theoretically the same, and the electrical environments in the differential measurement circuit are the same. Therefore, by performing differential measurement on the two suspended islands, the influence of environmental temperature fluctuations and power supply noise on the thermoelectric performance test can be effectively removed, thereby improving the test accuracy of the thermoelectric performance. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] Through the following description of the embodiments of the present disclosure with reference to the drawings, the above and other objects, features, and advantages of the present disclosure will become clearer. In the drawings:

[0021] Figure 1 Schematically shows an overall structural diagram of a thermoelectric performance test device of a suspended island micro-motor system provided by an embodiment of the present disclosure;

[0022] Figure 2 Schematically shows a top view of a thermoelectric performance test device of a suspended island micro-motor system provided by an embodiment of the present disclosure;

[0023] Figure 3 Schematically shows a diagram of each center line in the thermoelectric performance test device of the suspended island micro-motor system according to an embodiment of the present disclosure;

[0024] Figure 4 Schematically shows that in the thermoelectric performance test device of the suspended island micro-motor system according to an embodiment of the present disclosure along Figure 1 A cross-sectional structural diagram taken along line A-A;

[0025] Figure 5 Schematically shows a schematic diagram of the principle of thermoelectric performance test based on the thermoelectric performance test device of the suspended island micro-motor system provided by an embodiment of the present disclosure;

[0026] Figure 6 Schematically shows a flowchart of a preparation method of a thermoelectric performance test device of a suspended island micro-motor system according to an embodiment of the present disclosure.

[0027] Reference Signs:

[0028] 1 - Substrate; 2 - Cantilever; 3 - Suspended Island; 4 - First Metal Component; 5 - Second Metal Component; 41 - Metal Wire; 42 - Metal Coil; 51 - Metal Electrode; 52 - Metal Lead. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0029] To make the objectives, technical solutions and advantages of the present disclosure more comprehensible, the following provides a detailed description of the present disclosure with reference to specific embodiments and the accompanying drawings. Apparently, the described embodiments are only a part rather than all of the embodiments of the present disclosure. All other embodiments obtained by those of ordinary skill in the art based on the embodiments in the present disclosure without any creative efforts shall fall within the scope of protection of the present disclosure.

[0030] The terms used herein are merely for the purpose of describing specific embodiments and are not intended to limit the present disclosure. The terms such as "including" and "comprising" used herein indicate the presence of the described features, steps, operations and / or components, but do not exclude the presence or addition of one or more other features, steps, operations or components.

[0031] In the present disclosure, unless otherwise clearly defined and limited, the terms such as "installed", "connected", "joined" and "fixed" shall be construed in a broad sense. For example, it may be a fixed connection, a detachable connection or an integral one; it may be a mechanical connection, an electrical connection or a connection capable of mutual communication; it may be a direct connection or an indirect connection through an intermediate medium, and may be the internal connection of two elements or the interaction relationship between two elements. For those of ordinary skill in the art, the specific meanings of the above terms in the present disclosure may be understood according to specific circumstances.

[0032] In the description of the present disclosure, it should be understood that the orientation or positional relationships indicated by the terms such as "longitudinal", "length", "circumferential", "front", "rear", "left", "right", "top", "bottom", "inner" and "outer" are based on the orientation or positional relationships shown in the drawings, and are only for the convenience of describing the present disclosure and simplifying the description, rather than indicating or implying that the described subsystems or elements must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as a limitation to the present disclosure.

[0033] Throughout the drawings, the same elements are denoted by the same or similar reference numerals. When it may cause confusion in the understanding of the present disclosure, the conventional structures or configurations will be omitted. In addition, the shapes, sizes and positional relationships of the components in the drawings do not reflect the actual sizes, proportions and actual positional relationships. Further, in the claims, any reference signs placed between parentheses shall not be construed as limiting the claims.

[0034] Similarly, to streamline the present disclosure and assist in understanding one or more of the various disclosed aspects, in the above description of the exemplary embodiments of the present disclosure, the various features of the present disclosure are sometimes grouped together in a single embodiment, figure, or description thereof. Descriptions with reference to terms such as "one embodiment", "some embodiments", "example", "specific example", or "some examples" mean that the specific features, structures, materials, or characteristics described in connection with the embodiment or example are included in at least one embodiment or example of the present disclosure. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials, or characteristics described may be combined in any one or more embodiments or examples in a suitable manner.

[0035] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. Thus, features defined with "first" and "second" may explicitly or implicitly include one or more of such features. In the description of the present disclosure, the meaning of "a plurality" is at least two, such as two, three, etc., unless otherwise specifically defined.

[0036] The embodiments of the present disclosure provide a generation method and an electronic device. Before introducing the technical solutions provided by the embodiments of the present disclosure, the related technologies involved in the present disclosure are first described.

[0037] Thermoelectric test devices play an irreplaceable and important role in studying the thermal transport properties of materials and evaluating the thermal performance of devices. Existing suspended MEMS devices mainly reduce the heat conduction of the substrate by setting a suspended structure to achieve mechanical isolation, thereby improving the accuracy of measuring the thermoelectric properties of materials. However, existing suspended MEMS devices still have problems in terms of test accuracy, stability, etc.

[0038] The inventors of the present disclosure have found through research that thermoelectric performance testing is also affected by environmental factors. For example, factors such as environmental temperature fluctuations and power supply noise will affect the stability of thermoelectric performance testing. Therefore, the present disclosure proposes a suspended island MEMS thermoelectric performance test device, which eliminates common-mode interference through differential measurement, thereby further improving the test accuracy and stability of the thermoelectric performance test device.

[0039] An embodiment of the present disclosure provides a thermoelectric performance testing device for a suspended island micro-motor system, including: a substrate; a suspended island structure including a first suspended island, a central suspended island, and a third suspended island, where the first suspended island and the second suspended island are symmetrically and suspendedly arranged on the substrate with respect to the central suspended island; a plurality of first metal components, and one first metal component is arranged on each of the first suspended island, the central suspended island, and the second suspended island; wherein, when a target to be measured is placed between the first suspended island and the central suspended island, a first signal is obtained through the first metal component corresponding to the first suspended island, a second signal is obtained through the second metal component corresponding to the second suspended island, differential calculation is performed on the first signal and the second signal, and a thermoelectric performance test result of the target to be measured is determined based on the result of the differential calculation.

[0040] Figure 1 FIG. schematically shows an overall structural diagram of a thermoelectric performance testing device for a suspended island micro-motor system provided by an embodiment of the present disclosure.

[0041] Figure 2 FIG. schematically shows a top view of a thermoelectric performance testing device for a suspended island micro-motor system provided by an embodiment of the present disclosure.

[0042] As Figure 1 、 Figure 2 shown, the thermoelectric performance testing device for the suspended island micro-motor system in this embodiment includes: a substrate 1, a cantilever 2, a suspended island structure, a first metal component 4, and a second metal component 5.

[0043] The substrate 1 serves as a carrier for the entire thermoelectric device, and at least one set of suspended island structures is provided on the substrate 1. Each set of suspended island structures includes at least three suspended islands 3. In the embodiment of the present disclosure, three suspended islands 3 are set as a group, and the specific number of groups is not limited in the present disclosure. Each suspended island 3 includes a silicon nitride thin film and a first metal component 4, and the first metal component 4 is arranged in the silicon nitride thin film. Among them, the silicon nitride thin film and the included first metal component are integrally formed.

[0044] The cantilever 2 is respectively connected to the suspended island 3 and the substrate 1, and is used to suspend the silicon nitride thin film in the suspended island on the substrate 1. In the embodiment of the present disclosure, six groups of cantilever groups are provided, and each suspended island 3 is correspondingly provided with two cantilever groups, and these two cantilever groups are symmetrically arranged on opposite sides of the suspended island. Each suspended island 3 is suspended on the substrate 1 through two groups of cantilevers 2, and the three suspended islands are arranged in parallel at intervals. Among them, four cantilevers 2 are evenly spaced in each cantilever group, and the four cantilevers 2 are evenly spaced.

[0045] The number of the first metal components 4 corresponds to the number of the suspended islands. The first metal component is arranged in the silicon nitride thin film of the suspended island 3, and the first metal component 4 is used to perform thermoelectric performance testing on the target to be measured.

[0046] The second metal component 5, the number of the second metal components 5 corresponding to the number of suspended islands, and one second metal component 5 is correspondingly arranged for each suspended island. The second metal component is located on the substrate and the cantilever and is used to assist the first metal component in performing thermoelectric performance testing on the target to be measured.

[0047] See Figure 1 and Figure 2 , in the embodiment of the present disclosure, each group of suspended island structures includes a first suspended island 301, a central suspended island 302, and a second suspended island 303, where the central suspended island 302 is located between the first suspended island 301 and the second suspended island 303.

[0048] In some embodiments, the first suspended island, the central suspended island, and the second suspended island are arranged at equal intervals, the first suspended island and the second suspended island are mirror-symmetrical about the first center line, and the second suspended island and the first suspended island are mirror-symmetrical about the second center line.

[0049] Figure 3 Schematically shows a schematic diagram of each center line in the thermoelectric performance testing device of the suspended island micromotor system in the embodiment of the present disclosure.

[0050] As Figure 3 shown, the first center line 3a is the center line between the first suspended island 301 and the central suspended island, the second center line 3b is the center line of the suspended island structure, the direction of the first center line 3a is the same as the arrangement direction of the corresponding cantilever group of the suspended island, and the direction of the second center line is the same as the direction of the first center line.

[0051] Figure 4 Schematically shows a cross-sectional structure schematic diagram of the thermoelectric performance testing device of the suspended island micromotor system in the embodiment of the present disclosure along Figure 1 the A-A line in

[0052] As Figure 4 shown, the first metal component 4 includes a metal wire 41 and a metal coil 42. The second metal component 5 includes a metal electrode 51 and a metal lead 52.

[0053] The metal coil 42 is arranged in the silicon nitride film of the suspended island, the metal wire 41 is arranged on the silicon nitride film of the suspended island, the metal electrode 51 is arranged on the silicon nitride film of the substrate 1, and one metal electrode 51 corresponds to one cantilever 2. The metal lead 52 is arranged on the cantilever 2 and is used to connect the metal wire 41, the metal coil 42 and the metal electrode 51. The metal leads 52 correspond to the cantilevers one by one, each cantilever is provided with a metal lead, and the width of the metal lead 52 is smaller than the width of the cantilever 2.

[0054] In some embodiments, one side of the metal wire 41 on the suspended island is connected to the metal electrode 51 through a metal lead 52 on one of the cantilevers in the corresponding cantilever group of the suspended island, and one side of the metal coil 42 on the suspended island is connected to the metal electrode 51 through the metal leads 52 on the other three cantilevers in the cantilever group.

[0055] Continue to refer to Figure 3 , the first metal component 4 in each suspended island is symmetrically arranged with respect to the third center line 3c, and the third center line 3c is perpendicular to the first center line in direction.

[0056] Optionally, the thicknesses of the metal coil 42 and the metal lead 52 are less than 300 nm. In the embodiments of the present disclosure, the thicknesses of the metal coil 42 and the metal lead 52 are 150 nm. In other embodiments, the thicknesses of the metal coil 42 and the metal lead 52 can be 100 nm, 200 nm, 250 nm, etc. Those skilled in the art can select according to actual needs, and the present disclosure does not make any further limitations.

[0057] In some embodiments, the first suspended island, the central suspended island, the second suspended island in each suspended island structure, and the cantilever group connected to each suspended island are all symmetrically arranged with respect to the second center line 3b. The metal components corresponding to the first suspended island and the metal components corresponding to the second suspended island are also symmetrically arranged with respect to the second center line 3b to ensure that the physical environments where the first suspended island and the second suspended island are located are completely the same.

[0058] In an embodiment of the present disclosure, the substrate 1 is in the shape of a rectangular frame. Those skilled in the art can also set the shape of the substrate according to actual needs, and the present disclosure does not make any limitations.

[0059] Refer to Figure 1 , Figure 2 , in the embodiments of the present disclosure, in addition to forming a silicon nitride film on the upper surface of the substrate provided with the suspended island structure, a silicon nitride film is also formed on the lower surface of the substrate corresponding to the suspended island structure. Among them, the thickness of the silicon nitride film on the upper surface of the substrate is greater than the thickness of the silicon nitride film on the lower surface of the substrate. In the embodiments of the present disclosure, the thickness of the silicon nitride film on the upper surface of the substrate is 700 nm, and the thickness of the silicon nitride film on the lower surface of the substrate is 350 nm. In other embodiments, the thickness of the silicon nitride film on the upper surface of the substrate can be in the range of 600 - 800 nm, and the thickness of the silicon nitride film on the lower surface of the substrate can be in the range of 300 - 400 nm. The present disclosure does not make specific limitations here.

[0060] In the embodiment of the present disclosure, one end of the cantilever 2 in each cantilever group is connected to the silicon oxide film of the suspended island structure, and the other end is connected to the substrate 1 (during processing, the silicon nitride film of the suspended island structure, the cantilever and the silicon nitride film on the substrate 1 are integrally formed), the length of the cantilever 2 is 200-500 μm and the width is less than 5 μm,

[0061] In the disclosed embodiment, the length of the cantilever 2 is 300 μm and the width is 2 μm. In other embodiments, the length of the cantilever 2 may be 200 μm, 400 μm, 500 μm, etc., and the width of the cantilever 2 may be 1 μm, 3 μm, 4 μm, etc. If the length of the cantilever 2 is too short, heat will be easily transferred from the cantilever 2 to the substrate 1, increasing heat loss. If the length of the cantilever 2 is too long, the heat drop on the cantilever 2 will be greater than the heat drop at both ends of the nanomaterial (target to be tested), which reduces the accuracy of the thermoelectric performance test of the nanomaterial (target to be tested). The uniform distribution of the cantilevers 2 in each cantilever group is conducive to reducing the stress of the suspended island 3 structure, making it less likely for the cantilever 2 and the suspended island 3 to break.

[0062] Figure 5 The schematic diagram shows the principle diagram of thermoelectric performance testing of the suspended island micro-motor system thermoelectric performance testing device provided in the embodiment of the present disclosure.

[0063] like Figure 5 As shown, the thermoelectric performance test includes: placing the target to be tested (i.e. Figure 5 The "sample" in the middle is placed between the central suspended island and any of the suspended islands. The suspended island with the target to be measured is the measurement suspended island, and the suspended island without the target to be measured is the reference suspended island. Figure 5 A DC current is applied to the heating island in the sample to heat the sample, so that a temperature difference is generated among the heating island (i.e., the central island), the measuring island (the island with the target to be measured), and the reference island. Part of the heat generated by the heating island is transferred to the measuring island through the sample, causing the temperature of the measuring island to rise.

[0064] The resistance value R of the platinum resistor (i.e. metal coil 42) on the island is measured by calculation s The reference platinum resistor R ref The difference between ΔR = R s -R ref , the temperature rise ΔT of the measured suspended island is obtained. Based on ΔT, the thermal conductivity G of the target to be measured can be calculated, and the thermal conductivity σ of the sample can be finally calculated in combination with the shape of the target to be measured.

[0065] Since there is a temperature difference ΔT at both ends of the target to be measured 1, a voltage difference ΔV will be caused at both ends of the sample. By measuring the voltage difference at both ends of the sample using the metal wire 41, based on the temperature difference and voltage difference at both ends of the target to be measured, the Seebeck coefficient S = ΔV / ΔT is calculated 1 , so as to determine the thermoelectric performance of the target to be measured.

[0066] Taking the example of placing the target to be measured between the first suspended island and the central suspended island, at this time, the first suspended island is the Figure 5 measurement suspended island in Figure 5 the heating suspended island in Figure 5 the reference suspended island in

[0067] The first signal is obtained through the first metal component corresponding to the first suspended island, and the second signal is obtained through the first metal component corresponding to the second suspended island. The first signal and the second signal are subjected to differential calculation, and based on the result of the differential calculation, the test result of the thermoelectric performance of the target to be measured is determined. Among them, the first signal is the resistance information of the first metal component in the first suspended island, and the second signal is the resistance information of the first metal component in the second suspended island. Determining the test result of the thermoelectric performance of the target to be measured based on the result of the differential calculation includes: determining the temperature rise information ΔT of the first suspended island according to the difference between the first signal and the second signal, calculating the thermal conductance G of the target to be measured based on ΔT, and finally calculating the sample thermal conductivity σ in combination with the shape of the target to be measured.

[0068] In the embodiment of the present disclosure, by setting the reference suspended island and implementing a differential measurement scheme at the measurement end, since the physical environments of the left and right suspended islands among the three suspended islands are theoretically the same, and the electrical environments in the differential measurement circuit are the same, the influence of the environmental temperature fluctuation and the power supply noise on the left and right suspended islands is the same. The common-mode noise of the reference suspended island and the measurement suspended island is eliminated through differential measurement, so that the noise caused by the power supply and the environmental temperature fluctuation cancels each other out, thereby improving the test accuracy and test accuracy of the thermoelectric performance of the nanomaterial.

[0069] Based on the above thermoelectric performance test device of the suspended island microelectromechanical system, the present disclosure also provides a preparation method of the thermoelectric performance test device of the suspended island microelectromechanical system. The following will be combined with Figure 6 to describe this preparation method in detail.

[0070] Figure 6 A flowchart schematically shows a method for preparing a thermoelectric performance test device of a suspended island micromotor system according to an embodiment of the present disclosure.

[0071] As Figure 6 shown, the preparation method may include, for example, operation S610 to operation S640.

[0072] In operation S610, a silicon nitride thin film is grown on the substrate surface.

[0073] In some embodiments, a layer of silicon nitride thin film may be grown on the upper surface and the lower surface of the substrate respectively by low-pressure chemical vapor deposition technology. Among them, the upper silicon nitride thin film grown on the substrate upper surface is used to prepare the suspended island structure, and the lower silicon nitride thin film grown on the substrate lower surface is used to form an etching window.

[0074] In operation S620, a metal component is grown on the silicon nitride thin film surface.

[0075] In some embodiments, a first metal component and a second metal component are grown on the upper silicon nitride thin film surface.

[0076] First, after defining the patterns required for the metal coil and the metal lead using a negative photoresist, chromium (Cr) is deposited as an adhesion layer by magnetron sputtering technology, then platinum (Pt) is deposited, and finally it is peeled off in an acetone solution. After drying, the metal coil and the metal lead of the first metal component 4 are obtained. Among them, the thickness of the adhesion layer is 5 nm in this embodiment and may be 10 nm, 15 nm, 25 nm, etc. in other embodiments. Secondly, after defining the patterns required for the metal electrode using a negative photoresist, Cr is deposited as an adhesion layer by magnetron sputtering technology, then gold (Au) is deposited, and finally it is peeled off in an acetone solution. Finally, a silicon nitride passivation layer is grown on the metal component surface by plasma-enhanced chemical vapor deposition technology. The thickness of the silicon nitride passivation layer is 350 nm in this embodiment and may be 300 - 400 nm in other embodiments.

[0077] In operation S630, a part of the silicon nitride thin film is etched to form a suspended island structure and a cantilever structure.

[0078] In some embodiments, the upper silicon nitride thin film surface is patterned by photolithography technology and etched to obtain a suspended island structure. On the lower silicon nitride thin film surface, a bottom etching window is obtained by patterning and etching using photolithography technology.

[0079] In operation S640, the substrate is etched to obtain a test device.

[0080] In some embodiments, the substrate 1 is etched using a tetramethylammonium hydroxide (TMHA) solution and a hydrogen fluoride (HF) solution until the suspended island structure is completely released. Then, the residual HF is washed away with deionized water, and finally, a drying treatment is performed.

[0081] The embodiments of the present disclosure have been described above. However, these embodiments are for illustrative purposes only and are not intended to limit the scope of the present disclosure. Although the embodiments have been described separately above, this does not mean that the measures in each embodiment cannot be used advantageously in combination. Without departing from the scope of the present disclosure, those skilled in the art can make various substitutions and modifications, and these substitutions and modifications should be included within the protection scope of the present disclosure.

Claims

1. A suspended island micro-motor system thermoelectric performance test device, characterized in that: The device comprises: substrate; The suspended island structure comprises a first suspended island, a central suspended island and a third suspended island, wherein the first suspended island and the second suspended island are symmetrically suspended about the central suspended island on the substrate; A plurality of first metal components, wherein one first metal component is disposed on each of the first suspended island, the central suspended island and the second suspended island; Among them, when the target to be measured is placed between the first suspended island and the central suspended island, a first signal is obtained through a first metal component corresponding to the first suspended island, and a second signal is obtained through a second metal component corresponding to the second suspended island. The first signal and the second signal are differentially calculated, and the thermoelectric performance test result of the target to be measured is determined based on the result of the differential calculation.

2. The test device according to claim 1, characterized in that: The first signal is the resistance information of the first metal component on the first suspended island, and the second signal is the resistance information of the first metal component on the second suspended island; Determining the thermoelectric performance test result of the target to be tested based on the result of differential calculation includes: determining the temperature rise information of the first suspended island according to the result of differential calculation, and determining the thermoelectric performance test result of the target to be tested according to the temperature rise information.

3. The test device according to claim 1, characterized in that: The suspended island structure also includes: Silicon nitride film, each suspended island comprises a silicon nitride film, and the first metal component is disposed in the silicon nitride film.

4. The test device according to claim 3, characterized in that: The device further comprises: A cantilever, connected to the suspended island and the substrate respectively, and used to suspend the silicon nitride film in the suspended island on the substrate; A plurality of second metal components, one second metal component is arranged corresponding to each suspended island, the second metal component is located on the substrate and the cantilever, and is used to assist the first metal component in performing a thermoelectric performance test on the target to be tested.

5. The test device according to claim 1, characterized in that: The first suspended island, the central suspended island, and the second suspended island are arranged at equal intervals; the first suspended island and the central suspended island are mirror-symmetrical; and the second suspended island and the first suspended island are mirror-symmetrical.

6. The test device according to claim 1, characterized in that: Each suspended island is correspondingly provided with two cantilever groups, and the two cantilever groups are symmetrically arranged on both sides of the suspended island. Each cantilever group is provided with four cantilevers, and the four cantilevers are evenly spaced.

7. The test device according to claim 1, characterized in that: The first metal component comprises: A metal coil is disposed in the silicon nitride film of the suspended island; The metal wire is arranged on the silicon nitride film of the suspended island.

8. The test device according to claim 4, characterized in that: The second metal component comprises: A metal electrode is disposed on the substrate; A metal lead is arranged on the cantilever and is used to connect the metal wire, the metal coil and the metal electrode.

9. The test device according to claim 7 or 8, characterized in that: The metal lead wires correspond to the cantilevers, each cantilever is provided with a metal lead wire, and each metal lead wire is connected to a corresponding metal electrode; Among them, one metal lead in each cantilever group is used to connect the metal wire and the metal electrode, and the other three metal lead wires are used to connect the metal coil and the metal electrode.

10. A method for preparing a suspended island micro-motor system thermoelectric performance test device, used for preparing any thermoelectric performance test device in claims 1 to 9, characterized in that: The method comprises: growing a silicon nitride film on a surface of a substrate; growing a metal component on the surface of the silicon nitride film; Etching a portion of the silicon nitride film to form a suspended island structure and a cantilever structure; The substrate is corroded to obtain the test device.

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