Rotating shaft-wire connecting structure and manufacturing method thereof, micro galvanometer unit and MEMS micro galvanometer

Abstract

The invention provides a rotating shaft-wire connecting structure and a manufacturing method thereof, a micro galvanometer unit and an MEMS micro galvanometer, and the manufacturing method comprises the steps: providing a substrate which comprises a rotating shaft region; forming a first dielectric layer on the rotating shaft area; forming a wire layer extending along the axis direction of the rotating shaft area on a partial area of the first dielectric layer; and forming a second dielectric layer covering the first dielectric layer and the wire layer. The lead layer is formed between the first dielectric layer and the second dielectric layer, so that the lead layer can be prevented from being exposed, the stability of the lead layer is improved, the lead layer is prevented from falling off due to long-time work of the device, and the durability of the device is improved.

Description

Technical Field

[0001] This application relates to the field of semiconductor technology, and more particularly to a rotating shaft - wire connection structure, a manufacturing method thereof, a micromirror unit, and a MEMS micromirror. Background Art

[0002] MEMS (Micro - Electro - Mechanical System) micromirrors can be divided into four driving methods: electrostatic driving, electromagnetic driving, piezoelectric driving, and electrothermal driving. Due to the large force density of electromagnetic driving, electromagnetic - driven MEMS micromirrors have also been widely used. They have a large scanning angle and can achieve linear scanning.

[0003] Currently, in the design of electromagnetic - driven MEMS micromirrors, an electromagnetic coil is led to a connection pad (PAD) through a metal wire partially located on the rotating shaft of the micromirror.

[0004] When the electromagnetic - driven MEMS micromirror is in the working state, the mechanical movement of the rotating shaft causes the metal wire to be in a stressed state for a long time. Prolonged operation easily leads to the detachment of the metal wire, seriously affecting the durability of the device. Summary of the Invention

[0005] A series of simplified concepts are introduced in the Summary of the Invention section, which will be further detailed in the Detailed Description section. The Summary of the Invention section of this application is not intended to attempt to define the key features and essential technical features of the claimed technical solution, nor is it intended to determine the protection scope of the claimed technical solution.

[0006] In view of the existing problems, on the one hand, this application provides a manufacturing method of a rotating shaft - wire connection structure. The rotating shaft - wire connection structure is applied to the micromirror unit of a MEMS micromirror. The manufacturing method includes:

[0007] Providing a substrate, the substrate including a rotating shaft region;

[0008] Forming a first dielectric layer on the rotating shaft region;

[0009] Forming a wire layer extending along the axis direction of the rotating shaft region on a partial region of the first dielectric layer;

[0010] Forming a second dielectric layer covering the first dielectric layer and the wire layer.

[0011] Exemplarily, after forming the second dielectric layer covering the first dielectric layer and the wire layer, it further includes:

[0012] Forming a third dielectric layer on the second dielectric layer.

[0013] Exemplarily, the thickness of the wire layer is less than 1 μm.

[0014] On the other hand, the present application provides a rotating shaft - wire connection structure, which is applied to the micromirror unit of a MEMS micromirror. The rotating shaft - wire connection structure includes:

[0015] A substrate, the substrate including a rotating shaft region;

[0016] A first dielectric layer formed on the rotating shaft region;

[0017] A wire layer formed on a partial region of the first dielectric layer and extending along the axis direction of the rotating shaft region;

[0018] A second dielectric layer covering the first dielectric layer and the wire layer.

[0019] Exemplarily, the rotating shaft - wire connection structure further includes:

[0020] A third dielectric layer formed on the second dielectric layer.

[0021] Exemplarily, the thickness of the wire layer is less than 1 μm.

[0022] On the other hand, the present application provides a micromirror unit of a MEMS micromirror. The micromirror unit includes:

[0023] A substrate, the substrate including a frame region and a rotating shaft region connected to the frame region;

[0024] Wherein,

[0025] An electromagnetic coil is disposed on the frame region, a void region is formed in the frame region, and a rotatable micromirror is disposed in the void region;

[0026] A first dielectric layer is formed on the rotating shaft region, a wire layer extending along the axis direction of the rotating shaft region is formed on a partial region of the first dielectric layer, and a second dielectric layer covering both of them is formed on the first dielectric layer and the wire layer;

[0027] The electromagnetic coil is electrically connected to the wire layer.

[0028] Exemplarily, a third dielectric layer is further formed on the second dielectric layer.

[0029] Exemplarily, the thickness of the wire layer is less than 1 μm.

[0030] On the other hand, the present application provides a MEMS micromirror, which includes:

[0031] The micromirror unit according to any one of the above;

[0032] A pad, and the pad is electrically connected to an electromagnetic coil disposed on a frame region in the micro-mirror unit through a wire layer disposed on a rotation axis region in the micro-mirror unit.

[0033] For the rotation axis-wire connection structure and its manufacturing method, the micro-mirror unit and the MEMS micro-mirror of the present application, by forming the wire layer between the first dielectric layer and the second dielectric layer, the wire layer can be prevented from being exposed, the stability of the wire layer can be improved, the wire layer can be prevented from falling off due to long-term operation of the device, and the durability of the device can be improved. Description of the Drawings

[0034] The following drawings of the present application are hereby incorporated as part of the present application for understanding the present application. The embodiments and descriptions of the present application are shown in the drawings to explain the principles of the present application.

[0035] In the drawings:

[0036] Figure 1 A top view of an electromagnetic-driven MEMS micro-mirror in the related art is shown;

[0037] Figure 2 A top view of a micro-mirror unit in the related art is shown;

[0038] Figure 3 A schematic cross-sectional view of a rotation axis-wire connection structure in the related art is shown;

[0039] Figure 4 A flowchart of a manufacturing method of a rotation axis-wire connection structure according to a specific embodiment of the present application is shown;

[0040] Figures 5A to 5E A schematic cross-sectional view of a device substrate obtained by successively implementing the manufacturing method of a rotation axis-wire connection structure according to a specific embodiment of the present application is shown;

[0041] Figure 6 A top view of a micro-mirror unit according to a specific embodiment of the present application is shown;

[0042] Figure 7 A top view of an MEMS micro-mirror according to a specific embodiment of the present application is shown. Detailed Embodiments

[0043] In the following description, numerous specific details are given to provide a more thorough understanding of the present application. However, it will be apparent to one of ordinary skill in the art that the present application may be practiced without one or more of these details. In other instances, well-known technical features have not been described to avoid obscuring the present application.

[0044] It should be understood that the present application can be implemented in different forms and should not be construed as limited to the embodiments presented herein. On the contrary, providing these embodiments will make the disclosure thorough and complete, and will fully convey the scope of the present application to those skilled in the art. In the drawings, for clarity, the dimensions and relative dimensions of layers and regions may be exaggerated. Like reference numerals throughout the figures denote like elements.

[0045] It should be understood that when an element or layer is referred to as being "on", "adjacent to", "connected to" or "coupled to" another element or layer, it can be directly on, adjacent to, connected or coupled to the other element or layer, or intervening elements or layers may be present. In contrast, when an element is referred to as being "directly on", "directly adjacent to", "directly connected to" or "directly coupled to" another element or layer, there are no intervening elements or layers. It should be understood that although the terms first, second, third, etc. may be used to describe various elements, components, regions, layers and / or parts, these elements, components, regions, layers and / or parts should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or part from another element, component, region, layer or part. Thus, a first element, component, region, layer or part discussed below may be denoted as a second element, component, region, layer or part without departing from the teachings of the present application.

[0046] Spatial relationship terms such as "under", "below", "lower", "beneath", "above", "upper", etc. may be used herein for convenience in describing the relationship of one element or feature to another element or feature shown in the figures. It should be understood that, in addition to the orientation shown in the figures, spatial relationship terms are intended to include different orientations of the device in use and operation. For example, if the device in the figures is flipped, then an element or feature described as "under" or "beneath" or "below" another element or feature will be oriented "on" the other element or feature. Thus, the exemplary terms "under" and "below" can include both an upper and a lower orientation. The device may be otherwise oriented (rotated 90 degrees or other orientations) and the spatial descriptors used herein are to be interpreted accordingly.

[0047] The purpose of the terms used herein is only to describe specific embodiments and is not a limitation of the present application. As used herein, the singular forms "a", "an" and "the" are also intended to include the plural forms unless the context clearly dictates otherwise. It should also be understood that the terms "comprising" and / or "including", when used in this specification, identify the presence of the stated features, integers, steps, operations, elements and / or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components and / or groups. As used herein, the term "and / or" includes any and all combinations of the related listed items.

[0048] To thoroughly understand the present application, detailed steps and structures will be presented in the following description to illustrate the technical solutions proposed by the present application. The preferred embodiments of the present application are described in detail below. However, in addition to these detailed descriptions, the present application may have other implementation manners.

[0049] In the related art, as Figure 1 and Figure 2 shown, the electromagnetic-driven MEMS micro-mirror includes a micro-mirror unit 110, metal wires 120 and pads 130. Among them, the micro-mirror unit 110 includes a substrate, the substrate includes a frame area 1111 and rotation axis areas 1121 located on both sides of the frame area 1111. An electromagnetic coil 1112 is provided on the frame area 1111. An empty area 1113 is formed in the frame area 1111. A rotatable micro-mirror 1114 is provided in the empty area 1113. Part of the metal wires 120 are arranged in the rotation axis areas 1121. The electromagnetic coil 1112 is connected to the pad 130 through the metal wires 120. The thicknesses of the electromagnetic coil 1112 and the metal wires 120 reach dozens of micrometers.

[0050] More specifically, Figure 3 shows Figure 2 a schematic cross-sectional view of the rotation axis-wire connection structure of the micro-mirror unit in

[0051] along the A-A longitudinal direction. Among them, a first dielectric layer 1122, a second dielectric layer 1123 and a third dielectric layer 1124 are sequentially formed on the substrate of the rotation axis area 1121 from bottom to top. A groove is formed in the third dielectric layer 1124. Part of the metal wires 120 are formed in the groove and are higher than the third dielectric layer 1124.

[0052] Therefore, in view of the existence of the foregoing technical problems, the present application proposes a manufacturing method for a rotating shaft-wire connection structure, which is applied to a micro-mirror unit of a MEMS micro-mirror, such as Figure 4 shown, the manufacturing method includes:

[0053] Step S1, providing a substrate, the substrate including a rotating shaft region;

[0054] Step S2, forming a first dielectric layer on the rotating shaft region;

[0055] Step S3, forming a wire layer extending along the axis direction of the rotating shaft region on a partial region of the first dielectric layer;

[0056] Step S4, forming a second dielectric layer covering the first dielectric layer and the wire layer.

[0057] In the manufacturing method of the rotating shaft-wire connection structure of the micro-mirror unit of the present application, by forming the wire layer between the first dielectric layer and the second dielectric layer, the wire layer can be prevented from being exposed, the stability of the wire layer can be improved, the wire layer can be prevented from falling off due to long-term operation of the device, and the durability of the device can be improved.

[0058] Embodiment 1

[0059] Next, with reference to Figures 5A to 5E a detailed description will be given of the manufacturing method of the semiconductor device of the present application, wherein, Figures 5A to 5E shows a cross-sectional schematic diagram of a semiconductor device obtained by sequentially implementing the manufacturing method of a specific embodiment of the present application.

[0060] Exemplarily, the rotating shaft-wire connection structure of the present application is applied to a micro-mirror unit of a MEMS micro-mirror, and the manufacturing method of the rotating shaft-wire connection structure includes the following steps:

[0061] First, perform Step 1, as Figure 5A shown, providing a substrate, the substrate including a rotating shaft region 2121.

[0062] The substrate can be any suitable semiconductor substrate, such as a bulk silicon substrate, which can also be at least one of the materials mentioned below: Si, Ge, SiGe, SiC, SiGeC, InAs, GaAs, InP or other III / V compound semiconductors, and also includes multilayer structures composed of these semiconductors, etc., or is silicon on insulator (SOI), stacked silicon on insulator (SSOI), stacked silicon germanide on insulator (S-SiGeOI), silicon germanide on insulator (SiGeOI) and germanium on insulator (GeOI), or can also be double side polished wafers (DSP), and can also be a ceramic substrate such as alumina, a quartz or glass substrate, etc.

[0063] It can be understood that as Figure 6 shown, in addition to the rotation axis region 2121, the substrate can also include a frame region 2111, wherein the rotation axis region 2121 corresponds to the rotation axis of the micromirror unit 210, and the frame region 2111 corresponds to the frame of the micromirror unit 210. When the micromirror unit 210 works, under the action of an external magnetic field, it can drive the frame to twist around the rotation axis, so that the electromagnetic coil 2112 provided on the frame generates an electromagnetic driving force that affects the rotation and / or oscillation of the micromirror 2114.

[0064] Next, perform step two. As Figure 5B shown, a first dielectric layer 2122 is formed on the rotation axis region 2121.

[0065] Exemplarily, various deposition methods commonly used in the art can be used to form the first dielectric layer 2122. For example, it can be formed by chemical vapor deposition (CVD), physical vapor deposition (PVD) or atomic layer deposition (ALD) methods, etc. Exemplarily, the material of the first dielectric layer 2122 can be an insulating material such as silicon dioxide, fluorocarbon compound, carbon-doped silicon oxide, silicon carbonitride, etc., and the present application does not limit this.

[0066] Next, perform step three. As Figure 5C shown, a wire layer 220 extending along the axis direction of the rotation axis region 2121 is formed on a partial region of the first dielectric layer 2122.

[0067] Exemplarily, the wire layer 220 is formed on the first dielectric layer 2122. The wire layer 220 covers a partial region of the first dielectric layer 2122, and the left and right sides of the wire layer 220 expose the first dielectric layer 2122 in the remaining regions. The wire layer 220 extends along the axis direction of the rotation axis region 2121 in the length direction.

[0068] In one example, the method of forming the wire layer 220 includes: depositing a wire material layer to cover the first dielectric layer 2122, and then forming a patterned mask layer on the wire material layer, the mask layer defining the pattern of the wire layer 220, and then using the patterned mask layer as a mask to etch the wire material layer to form the wire layer 220, and finally removing the patterned mask layer.

[0069] Among them, the wire layer 220 can be formed by deposition techniques such as chemical vapor deposition (CVD), physical vapor deposition (PVD), or atomic layer deposition (ALD).

[0070] The material of the wire layer 220 can use a conductive material, and the conductive material can be a metal material with conductive properties. The metal material can use metals such as aluminum (Al), copper (Cu), gold (Au), platinum (Pt), etc. or alloys of metals and copper, etc.

[0071] In one example, the thickness of the wire layer 220 is less than 1 um. By reducing the thickness of the wire layer 220 from dozens of microns in the related art to less than 1 um, the fitting accuracy between the wire layer 220 and the rotating shaft can be significantly improved. Moreover, based on forming the wire layer 220 between the first dielectric layer 2122 and the second dielectric layer 2123 to avoid the wire layer 220 being exposed, the thickness of the wire layer 220 can be further reduced to reduce the material cost.

[0072] Next, perform step four, as Figure 5D shown, to form the second dielectric layer 2123 covering the first dielectric layer 2122 and the wire layer 220.

[0073] Among them, the formed second dielectric layer 2123 covers the surfaces of the first dielectric layer 2122 exposed on the left and right sides of the wire layer 220, as well as covers the surface and sidewalls of the wire layer 220.

[0074] Exemplarily, various deposition methods commonly used in the art can be used to form the second dielectric layer 2123. For example, it can be formed by chemical vapor deposition (CVD), physical vapor deposition (PVD), or atomic layer deposition (ALD), etc. Exemplarily, the material of the second dielectric layer 2123 can be an insulating material such as silicon dioxide, fluorocarbon, carbon-doped silicon oxide, silicon carbonitride, etc. The present application does not limit this.

[0075] Next, exemplarily, as Figure 5E shown, form the third dielectric layer 2124 on the second dielectric layer 2123.

[0076] Exemplarily, various deposition methods commonly used in the art can be employed to form the third dielectric layer 2124. For example, it can be formed by chemical vapor deposition (CVD), physical vapor deposition (PVD), atomic layer deposition (ALD), etc. Exemplarily, the material of the third dielectric layer 2124 can be an insulating material such as silicon dioxide, fluorocarbon, carbon-doped silicon oxide, silicon carbonitride, etc., and the present application does not limit this.

[0077] Thus, the description of the key steps of the manufacturing method of the semiconductor device of the present application is completed. For the complete manufacturing method of the semiconductor device, other steps may also be included, which will not be elaborated one by one here. It is worth mentioning that the above step sequence can be adjusted on the premise of no conflict.

[0078] In summary, in the manufacturing method of the rotating shaft-wire connection structure according to the embodiment of the present application, by forming the wire layer 220 between the first dielectric layer 2122 and the second dielectric layer 2123, the wire layer 220 can be prevented from being exposed, the stability of the wire layer 220 can be improved, the wire layer 220 can be prevented from falling off due to long-term operation of the device, and the durability of the device can be improved.

[0079] Embodiment 2

[0080] Another embodiment of the present application further provides a rotating shaft-wire connection structure, and the rotating shaft-wire connection structure is applied to the micro-mirror unit 210 of a MEMS micro-mirror. As Figure 5E shown, the rotating shaft-wire connection structure includes: a substrate, the substrate includes a rotating shaft region 2121; a first dielectric layer 2122 formed on the rotating shaft region 2121; a wire layer 220 formed on a partial region of the first dielectric layer 2122 and extending along the axis direction of the rotating shaft region 2121; and a second dielectric layer 2123 covering the first dielectric layer 2122 and the wire layer 220.

[0081] In some embodiments, the substrate can be any suitable semiconductor substrate, such as a bulk silicon substrate, which can also be at least one of the following materials: Si, Ge, SiGe, SiC, SiGeC, InAs, GaAs, InP, or other III / V compound semiconductors, and also includes multi-layer structures composed of these semiconductors, etc., or is silicon on insulator (SOI), stacked silicon on insulator (SSOI), stacked silicon germanium on insulator (S-SiGeOI), silicon germanium on insulator (SiGeOI), and germanium on insulator (GeOI), or can also be a double-sided polished silicon wafer (DSP), and can also be a ceramic substrate such as alumina, a quartz or glass substrate, etc.

[0082] It can be understood that as Figure 6As shown, in addition to the rotation axis region 2121, the substrate may further include a frame region 2111. Among them, the rotation axis region 2121 corresponds to the rotation axis of the micromirror unit 210, and the frame region 2111 corresponds to the frame of the micromirror unit 210. When the micromirror unit 210 operates, under the action of an external magnetic field, it can drive the frame to twist around the rotation axis, so that the electromagnetic coil 2112 provided on the frame generates an electromagnetic driving force that affects the rotation and / or oscillation of the micromirror 2114.

[0083] Exemplarily, various deposition methods commonly used in the art can be used to form the first dielectric layer 2122 on the rotation axis region 2121. For example, it can be formed by chemical vapor deposition (CVD), physical vapor deposition (PVD), atomic layer deposition (ALD), etc. Exemplarily, the material of the first dielectric layer 2122 can be an insulating material such as silicon dioxide, fluorocarbon compound, carbon-doped silicon oxide, silicon carbonitride, etc., and the present application does not limit this.

[0084] In one example, the method of forming the wire layer 220 includes: depositing a wire material layer to cover the first dielectric layer 2122. Then, a patterned mask layer is formed on the wire material layer, and the pattern of the wire layer 220 is defined in this mask layer. Then, using this patterned mask layer as a mask, the wire material layer is etched to form the wire layer 220. Finally, the patterned mask layer is removed. The formed wire layer 220 covers a partial area of the first dielectric layer 2122, and the left and right sides of the wire layer 220 expose the first dielectric layer 2122 in the remaining areas. The wire layer 220 extends along the axis direction of the rotation axis region 2121 in the length direction.

[0085] Among them, the wire layer 220 can be formed by deposition techniques such as chemical vapor deposition (CVD), physical vapor deposition (PVD), or atomic layer deposition (ALD).

[0086] The material of the wire layer 220 can use a conductive material, and the conductive material can be a metal material with conductive properties. The metal material can use metals such as aluminum (Al), copper (Cu), gold (Au), platinum (Pt), etc. or alloys of metals and copper, etc.

[0087] In one example, the thickness of the wire layer 220 is less than 1 um. By reducing the thickness of the wire layer 220 from dozens of micrometers in the related art to less than 1 um, the fitting accuracy between the wire layer 220 and the rotation axis can be significantly improved. Moreover, on the basis that the present application forms the wire layer 220 between the first dielectric layer 2122 and the second dielectric layer 2123 to avoid the wire layer 220 being exposed, the thickness of the wire layer 220 can be further reduced to reduce the material cost.

[0088] Exemplarily, various deposition methods commonly used in the art can be employed to form the second dielectric layer 2123 covering the first dielectric layer 2122 and the wire layer 220. For example, it can be formed by chemical vapor deposition (CVD), physical vapor deposition (PVD), atomic layer deposition (ALD), etc. Exemplarily, the material of the second dielectric layer 2123 can be an insulating material such as silicon dioxide, fluorocarbon, carbon-doped silicon oxide, silicon carbonitride, etc., and the present application does not limit this.

[0089] Among them, the formed second dielectric layer 2123 covers the surfaces of the first dielectric layer 2122 exposed on the left and right sides of the wire layer 220, as well as covers the surface and sidewalls of the wire layer 220.

[0090] In some embodiments, as Figure 5E shown, the rotation axis - wire connection structure further includes: a third dielectric layer 2124 formed on the second dielectric layer 2123.

[0091] Exemplarily, various deposition methods commonly used in the art can be used to form the third dielectric layer 2124. For example, it can be formed by chemical vapor deposition (CVD), physical vapor deposition (PVD), atomic layer deposition (ALD), etc. Exemplarily, the material of the third dielectric layer 2124 can be an insulating material such as silicon dioxide, fluorocarbon, carbon-doped silicon oxide, silicon carbonitride, etc., and the present application does not limit this.

[0092] According to the rotation axis - wire connection structure of the present application, by forming the wire layer 220 between the first dielectric layer 2122 and the second dielectric layer 2123, the wire layer 220 can be prevented from being exposed, the stability of the wire layer 220 can be improved, the wire layer 220 can be prevented from falling off due to long-term operation of the device, and the durability of the device can be improved.

[0093] Embodiment 3

[0094] Another embodiment of the present application further provides a micro-mirror unit 210 of a MEMS micro-mirror. As Figure 5E and Figure 6 shown, Figure 5E shows Figure 6Schematic cross-sectional view of the rotation axis-wire connection structure of the micromirror unit 210 along the longitudinal direction of B-B. The micromirror unit 210 includes: a substrate, which includes a frame area 2111 and a rotation axis area 2121 connected to the frame area 2111; wherein, an electromagnetic coil 2112 is arranged on the frame area 2111, an empty area 2113 is formed in the frame area 2111, and a rotatable micromirror 2114 is arranged in the empty area 2113; a first dielectric layer 2122 is formed on the rotation axis area 2121, a wire layer 220 extending along the axis direction of the rotation axis area 2121 is formed on a partial area of the first dielectric layer 2122, and a second dielectric layer 2123 covering both is formed on the first dielectric layer 2122 and the wire layer 220; the electromagnetic coil 2112 is electrically connected to the wire layer 220.

[0095] For the relevant description of the micromirror unit 210, reference can be made to the description in the above text, which will not be elaborated here.

[0096] In some embodiments, as Figure 5E shown, a third dielectric layer 2124 is further formed on the second dielectric layer 2123.

[0097] For the micromirror unit 210 of the MEMS micromirror according to the present application, by forming the wire layer 220 between the first dielectric layer 2122 and the second dielectric layer 2123, the wire layer 220 can be prevented from being exposed, the stability of the wire layer 220 can be improved, the wire layer 220 can be prevented from falling off due to long-term operation of the device, and the durability of the device can be improved.

[0098] Embodiment 4

[0099] Another embodiment of the present application further provides a MEMS micromirror. As Figure 6 and Figure 7 shown, the MEMS micromirror includes: a micromirror unit 210; a pad 240, and the pad 240 is electrically connected to the electromagnetic coil 2112 arranged on the frame area 2111 in the micromirror unit 210 through the wire layer 220 arranged on the rotation axis area 2121 in the micromirror unit 210.

[0100] Among them, the micromirror unit 210 can be implemented as the micromirror unit 210 in the above text, and reference can be made to the introduction in the above text, which will not be elaborated here.

[0101] In some embodiments, as Figure 7 shown, the MEMS micromirror further includes a connection wire 230. One end of the connection wire 230 is electrically connected to the pad 240, and the other end is electrically connected to the wire layer 220, so that the pad 240 and the wire layer 220 are electrically connected through the connection wire 230.

[0102] Among them, the connection wire 230 can have the same thickness as the wire layer 220, and the materials of the two can be the same.

[0103] This application has been illustrated by the above embodiments. However, it should be understood that the above embodiments are only for the purpose of exemplification and illustration, and are not intended to limit this application to the scope of the described embodiments. In addition, those skilled in the art can understand that this application is not limited to the above embodiments, and more variations and modifications can be made according to the teachings of this application, and these variations and modifications all fall within the scope of protection required by this application. The scope of protection of this application is defined by the appended claims and their equivalent scope.

Claims

1. A method for manufacturing a rotating shaft-conducting wire connection structure, characterized in that: The rotating shaft-wire connection structure is applied to a micro-vibration mirror unit of a MEMS micro-vibration mirror, and the manufacturing method comprises: providing a substrate, the substrate comprising a rotation axis region; forming a first dielectric layer on the rotation axis region; forming a conductor layer extending along the axis direction of the rotation axis region on a partial area of ​​the first dielectric layer; A second dielectric layer covering the first dielectric layer and the wire layer is formed.

2. The manufacturing method according to claim 1, characterized in that After forming a second dielectric layer covering the first dielectric layer and the wire layer, the method further includes: A third dielectric layer is formed on the second dielectric layer.

3. The manufacturing method according to claim 1, characterized in that: The thickness of the conductor layer is less than 1 um.

4. A rotating shaft-conducting wire connection structure, characterized in that: The rotating shaft-wire connection structure is applied to a micro-vibration mirror unit of a MEMS micro-vibration mirror, and the rotating shaft-wire connection structure includes: a substrate, the substrate comprising a rotation axis region; A first dielectric layer formed on the rotation axis region; A conductor layer, formed on a partial area of ​​the first dielectric layer and extending along the axis direction of the rotation axis area; The second dielectric layer covers the first dielectric layer and the wire layer.

5. The rotating shaft-conducting wire connection structure according to claim 4, characterized in that: The rotating shaft-conducting wire connection structure further includes: The third dielectric layer is formed on the second dielectric layer.

6. The rotating shaft-conducting wire connection structure according to claim 4, characterized in that: The thickness of the conductor layer is less than 1 um.

7. A micro-vibration mirror unit of a MEMS micro-vibration mirror, characterized in that: The micro-vibration mirror unit comprises: A substrate, the substrate comprising a frame region and a rotation axis region connected to the frame region; in, An electromagnetic coil is arranged on the frame area, an empty area is formed in the frame area, and a rotatable micro-vibration mirror is arranged in the empty area; A first dielectric layer is formed on the rotation axis region, a conductive line layer extending along the axis direction of the rotation axis region is formed on a part of the first dielectric layer, and a second dielectric layer covering the first dielectric layer and the conductive line layer is formed on both. The electromagnetic coil is electrically connected to the conductor layer.

8. The micro-mirror unit according to claim 7, characterized in that: A third dielectric layer is also formed on the second dielectric layer.

9. The micro-mirror unit according to claim 7, characterized in that: The thickness of the conductor layer is less than 1 um.

10. A MEMS micro-vibration mirror, characterized in that: The MEMS micro-vibration mirror comprises: The micro-mirror unit according to any one of claims 7 to 9; A pad is electrically connected to an electromagnetic coil arranged on a frame area in the micro-vibration mirror unit through a wire layer arranged on a rotation axis area in the micro-vibration mirror unit.

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