Tantalum capacitor

Abstract

The present disclosure provides a tantalum capacitor comprising: a tantalum body comprising a tantalum core and a conductive polymer layer disposed on the tantalum core; a molded portion including fifth and sixth surfaces opposed to each other in a first direction, third and fourth surfaces opposed to each other in a second direction, and first and second surfaces opposed to each other in a third direction, the molded portion being formed to surround the tantalum body; an anode portion including a first ceramic layer in contact with the tantalum body and an electrode layer disposed on the first ceramic layer; and a cathode portion connected to the tantalum body and spaced apart from the anode portion.

Description

[0001] This application claims the benefit of priority to Korean Patent Application No. 10-2023-0170584, filed with the Korean Intellectual Property Office on November 30, 2023, the disclosure of which is incorporated herein by reference in its entirety. Technical Field

[0002] The present disclosure relates to a tantalum capacitor, and more particularly, to a tantalum capacitor having improved moisture resistance, connection reliability, and capacitance. Background Art

[0003] Tantalum (Ta) is a metal widely used in industries including power and electronics, machinery, chemical engineering, medicine, aerospace, and military industries due to its mechanical and physical properties such as high melting point, excellent ductility, and corrosion resistance.

[0004] Particularly, materials formed of tantalum (Ta) are currently widely used as anode materials for small capacitors due to their property of forming the most stable anodic oxide film among all metals.

[0005] In addition, due to the recent rapid development of the IT industry (such as the electronics and information and communication industries), the use of tantalum materials has been increasing rapidly every year.

[0006] Tantalum capacitors use a structure in which an internal lead frame is used to connect a tantalum body and an electrode. In this case, if sufficient adhesion between the internal lead frame and the molding part cannot be ensured, interface defects may occur, and moisture may penetrate through the interface. This degrades the characteristics of the tantalum capacitor in high-temperature and high-humidity environments and affects reliability. Summary of the Invention

[0007] One aspect of the present disclosure is to provide a tantalum capacitor having excellent reliability by minimizing the penetration of moisture through the interface.

[0008] Another aspect of the present disclosure is to provide a tantalum capacitor with an increased storage capacity.

[0009] According to one aspect of the present disclosure, there is provided a tantalum capacitor including: a tantalum body including a tantalum core and a conductive polymer layer provided on the tantalum core; a molding part including a fifth surface and a sixth surface facing each other in a first direction, a third surface and a fourth surface facing each other in a second direction, and a first surface and a second surface facing each other in a third direction, the molding part being provided to surround the tantalum body; an anode part including a first ceramic layer in contact with the tantalum body and an electrode layer provided on the first ceramic layer; and a cathode part connected to the tantalum body and spaced apart from the anode part.

[0010] According to another aspect of the present disclosure, there is provided a tantalum capacitor, which includes: a tantalum body including a tantalum core and a conductive polymer layer provided on the tantalum core; a molding part provided to surround the tantalum body; an anode part provided on one surface of the tantalum body and including a dielectric and an electrode layer provided in the dielectric; and a cathode part connected to the tantalum body and spaced apart from the anode part. Description of the Drawings

[0011] Through the following specific embodiments in conjunction with the drawings, the above and other aspects, features and advantages of the present disclosure will be more clearly understood. In the drawings: Figure 1 is a perspective view of a tantalum capacitor according to a first embodiment of the present disclosure; Figure 2 is a schematic view of the tantalum capacitor in Figure 1 viewed along a second direction; Figure 3 is a cross-sectional view taken along line I-I' in Figure 1 ; Figure 4 is a perspective view showing the structure of the anode part in Figure 1 ; Figure 5 is a perspective view showing the bonding structure between the anode part and the tantalum body in Figure 1 ; Figures 6 to 9 is a cross-sectional view showing a tantalum capacitor according to a variant example of the first embodiment; Figure 10 is a perspective view of a tantalum capacitor according to a second embodiment of the present disclosure; Figure 11 is a schematic view of the tantalum capacitor in Figure 10 viewed along a second direction; Figure 12 is a cross-sectional view taken along line II-II' in Figure 10 ; Figure 13 is a cross-sectional view showing a tantalum capacitor according to a variant example of the second embodiment; Figure 14 is a cross-sectional view showing another variant example of the second embodiment of the tantalum capacitor; and Figure 15 is a cross-sectional view showing a conventional tantalum capacitor. Detailed Description of the Embodiments

[0012] Hereinafter, exemplary embodiments of the present disclosure will be described in detail with reference to the accompanying drawings. However, the disclosed concepts may be illustrated in many different forms and should not be construed as limited to the specific exemplary embodiments set forth herein. Rather, these exemplary embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosed concepts to those skilled in the art. In the drawings, the shapes and sizes of elements may be exaggerated for clarity, and the same reference numerals will always be used to denote the same or similar elements.

[0013] Hereinafter, exemplary embodiments in the present disclosure will be described with reference to the accompanying drawings.

[0014] In the drawings, the X direction may be defined as the first direction or the length direction, the Y direction may be defined as the second direction or the width direction, and the Z direction may be defined as the third direction or the thickness direction.

[0015] (First Embodiment) Figure 1 is a perspective view of a tantalum capacitor according to a first embodiment of the present disclosure. Figure 2 is viewed along the second direction Figure 1 of the tantalum capacitor in Figure 3 is a schematic view Figure 1 taken along line I-I' in Figure 4 is a perspective view showing Figure 1 the structure of the anode part in Figure 5 is a perspective view showing Figure 1 the bonding structure between the anode part and the tantalum body in

[0016] Referring to Figure 1 and Figure 2 , the tantalum capacitor 1000 of the present embodiment may include a tantalum body 100, a molding part 200, an anode part 300, and a cathode part 400.

[0017] Referring to Figure 3 , the tantalum body 100 of the present disclosure may include: a tantalum core 110 formed by sintering a molded body including metal powder; a conductive polymer layer 120 disposed on the tantalum core 110; a carbon layer 130 disposed on the conductive polymer layer 120; and a silver (Ag) layer 140 disposed on the carbon layer 130.

[0018] The tantalum capacitor may not include a tantalum wire. This will be described in detail when describing the anode part 300 (which will be described later).

[0019] The tantalum core 110 may be formed by sintering a molded body including metal powder and a binder.

[0020] Specifically, the tantalum core 110 can be manufactured in the following manner: mixing metal powder, binder, and solvent at a certain ratio, stirring the mixture, pressing the mixture to form a parallelepiped (e.g., a rectangular parallelepiped), and then sintering it under high temperature and high vibration.

[0021] The metal powder is not particularly limited as long as it can be used in the tantalum core 110 of the tantalum capacitor 1000 according to the embodiments of the present disclosure, and it can be tantalum (Ta) powder. However, the present disclosure is not limited thereto, and the metal powder can be one or more selected from the group consisting of aluminum (Al), niobium (Nb), vanadium (V), titanium (Ti), and zirconium (Zr). Therefore, elements such as aluminum and niobium can also be used instead of tantalum.

[0022] The binder is not restricted and can be, for example, a cellulose-based binder.

[0023] The cellulose-based binder can be one or more selected from the group consisting of nitrocellulose, methylcellulose, ethylcellulose, and hydroxypropylcellulose.

[0024] According to the embodiments of the present disclosure, a dielectric oxide layer can be formed on the tantalum core 110 as an insulating layer. That is, an oxide film (Ta 2 O 5 ) can be grown on the surface of the tantalum core 110 by a formation process using an electrochemical reaction to form the dielectric oxide layer. Here, the dielectric oxide layer turns the tantalum core 110 into a dielectric. Additionally, a conductive polymer layer 120 with a negative polarity can be coated and formed on the dielectric oxide layer.

[0025] The conductive polymer layer 120 is not particularly limited and can include, for example, a conductive polymer.

[0026] Specifically, the conductive polymer can be formed using EDOT (3,4-ethylenedioxythiophene), pyrrole monomer, or polypyrrole by chemical polymerization or electro-polymerization, and then a cathode layer with a conductive polymer cathode can be formed on the outer surface of the tantalum core 110 on which an insulating layer has been formed.

[0027] That is, the conductive polymer layer 120 can be formed using a polymer slurry, and the polymer slurry can include at least one of polypyrrole, polyaniline, or EDOT (3,4-ethylenedioxythiophene). Additionally, the conductive polymer layer 120 can also include PEDOT:PSS (poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate)). PEDOT:PSS can be manufactured by oxidatively polymerizing EDOT using polystyrenesulfonate (PSS) as a template for balancing charges.

[0028] In addition, the carbon layer 130 can be stacked on the conductive polymer layer 120, and the stacking can be performed in the following manner: Dissolve carbon powder in an organic solvent including an epoxy resin, immerse the tantalum core 110 in the solution in which the carbon powder is dissolved, and then dry at a predetermined temperature to volatilize the organic solvent.

[0029] In addition, the carbon layer 130 can be used to prevent silver (Ag) ions from passing through.

[0030] Next, a silver (Ag) layer 140 formed using silver (Ag) paste can be included on the outer surface of the carbon layer 130.

[0031] The silver (Ag) layer 140 can be stacked outside the carbon layer 130 to improve conductivity.

[0032] In addition, the silver (Ag) layer 140 can promote electrical connection for polarity transfer by improving the conductivity of the cathode layer to polarity.

[0033] The molding part 200 covers the tantalum body 100 to play a role in protecting the tantalum body 100.

[0034] The molding part 200 includes a fifth surface 5 and a sixth surface 6 that face each other in the first direction (X direction), a third surface 3 and a fourth surface 4 that face each other in the second direction (Y direction), and a first surface 1 and a second surface 2 that face each other in the third direction (Z direction). As an example, the molding part 200 can have a hexahedral shape, but the present disclosure is not necessarily limited thereto.

[0035] The molding part 200 can be formed by transfer molding a resin such as EMC (epoxy molding compound) to surround the tantalum body 100.

[0036] The anode part 300 can include a first ceramic layer 311 in contact with the tantalum body 100 and an electrode layer 320 provided on the first ceramic layer 311.

[0037] The first ceramic layer 311 is in contact with the tantalum body 100. Specifically, the first ceramic layer 311 can contact one surface of the tantalum body 100. The first ceramic layer 311 can contact the conductive polymer layer 120, the carbon layer 130, and the silver (Ag) layer 140 of the tantalum body 100.

[0038] The first ceramic layer 311 can include at least one opening O, and a part of the tantalum core 110 can be provided in the at least one opening O. By providing a part of the tantalum core 110 in the at least one opening O, the tantalum core 110 and the electrode layer 320 of the anode part can be electrically connected. That is, since the anode part 300 of the tantalum capacitor according to the present embodiment is in direct contact with the tantalum body 100, the tantalum wire can be omitted compared with a conventional tantalum capacitor.

[0039] The anode portion may further include a second ceramic layer 312 disposed on the electrode layer 320. The second ceramic layer 312 may cover the electrode layer 320 and may prevent the electrode layer 320 from being exposed to the outer surface of the tantalum capacitor.

[0040] Referring Figure 3 and Figure 4 , the first ceramic layer 311, the electrode layer 320, and the second ceramic layer 312 may be disposed in this order in the first direction (X direction). That is, the electrode layer 320 may be disposed or stacked between the plurality of ceramic layers 311 and 312.

[0041] In addition, the anode portion 300 and the cathode portion 400, which will be described later, may be spaced apart in the first direction (X direction), but the present disclosure is not limited thereto, and the anode portion 300 and the cathode portion 400 may be spaced apart in the second direction (Y direction). In this case, the anode portion 300 may be disposed in the order of the first ceramic layer 311, the electrode layer 320, and the second ceramic layer 312 in the second direction (Y direction).

[0042] The ceramic layers 311 and 312 may include a ceramic material. For example, the ceramic material may be a strontium titanate (SrTiO 3 )-based ceramic material, a calcium titanate (CaTiO 3 )-based ceramic material, a calcium zirconate (CaZrO 3 )-based ceramic material, and a barium titanate (BaTiO 3 )-based ceramic material, but the present disclosure is not limited thereto. For example, the barium titanate (BaTiO 3 )-based ceramic material may include barium titanate (BaTiO 3 ) or a ceramic material obtained by solid solution by substituting barium (Ba) and / or titanium (Ti) of barium titanate (BaTiO 3 ) with other elements (e.g., rare earth elements). In addition, various ceramic additives (such as MgO, Al 2 O 3 , SiO 2 , ZnO), organic solvents, plasticizers, binders, dispersants, etc. may be added to the ceramic material. For example, the ceramic material may include polyvinyl alcohol (PVA), polyvinyl butyral (PVB), acrylic resin, etc. as binders.

[0043] The ceramic layers 311 and 312 may be prepared in the form of a sheet by coating a slurry containing a ceramic material (such as barium titanate (BaTiO 3 )) on a carrier film and drying it.

[0044] The ceramic layer may be formed by mixing a ceramic material, a binder, and a solvent to generate a slurry, and using a doctor blade method to form the slurry into a sheet with a thickness of several micrometers, but the present disclosure is not limited thereto.

[0045] The electrode layer 320 is disposed between the ceramic layers 311 and 312. The electrode layer 320 is connected to the tantalum body 100 and serves as an electrode.

[0046] Referring Figure 3 and Figure 4 , the electrode layer 320 can be surrounded by the ceramic layers 311 and 312. Contact between the electrode layer 320 and the molding portion 200 can be blocked by the ceramic layers 311 and 312. That is, the electrode layer 320 can be spaced apart from the molding portion 200.

[0047] As will be described later, after the tantalum powder for forming the tantalum core 110 is disposed in the opening O of the first ceramic layer, the tantalum core 110 and the anode portion 300 can be sintered simultaneously. Accordingly, the electrode layer 320 and the tantalum core 110 can be in contact with each other through the opening O of the first ceramic layer. The electrode layer 320 and the tantalum core 110 can be in direct contact without using a tantalum wire.

[0048] Referring Figure 3 , the lower surface of the electrode layer 320 based on Figure 3 is exposed from the ceramic layers 311 and 312, and thus the anode portion 300 can serve as a terminal when the tantalum capacitor is mounted on a substrate.

[0049] The material for forming the electrode layer 320 is not particularly limited, and any material having excellent conductivity can be used. For example, the material for forming the electrode layer 320 may include one or more selected from the group consisting of Ni (nickel), Ta (tantalum), Fe (iron), Nb (niobium), Co (cobalt), Ir (iridium), SUS304 (a stainless steel material according to Japanese Industrial Standards (JIS)), and Cr (chromium). In addition, the electrode layer 320 can be formed by printing a conductive paste including one or more selected from the group consisting of Ni (nickel), Ta (tantalum), Fe (iron), Nb (niobium), Co (cobalt), Ir (iridium), SUS304, and Cr (chromium) on the first ceramic layer 311. Specific printing methods include a screen printing method, a gravure printing method, an inkjet printing method, etc., but the present disclosure is not limited thereto.

[0050] The anode portion 300 can be formed by stacking ceramic layers on which a conductive paste is printed and pressing the ceramic layers. Thereafter, the tantalum powder for forming the tantalum core 110 is placed in the opening of the ceramic layer, and then the tantalum core 110 and the anode portion 300 can be sintered simultaneously.

[0051] When the electrode layer 320 is formed of a metal having a sintering temperature similar to that of tantalum powder, the anode portion 300 and the tantalum core 110 can be sintered simultaneously. In this case, an alloy having tantalum (Ta) can be formed by sintering, and the bonding strength between the anode portion 300 and the tantalum body 100 can be increased. As an example, when the electrode layer 320 includes iron (Fe), nickel (Ni), and SUS304, the bonding strength between the electrode layer 320 and the tantalum body can be increased.

[0052] The anode portion 300 may further include a plating layer 330 connected to the electrode layer 320 in a third direction. The plating layer 330 may be formed of a conductive material such as copper (Cu), aluminum (Al), silver (Ag), tin (Sn), gold (Au), nickel (Ni), lead (Pb), chromium (Cr), titanium (Ti), or an alloy thereof, but the present disclosure is not limited thereto. The plating layer 330 may be formed as a single layer. When the electrode layer 320 includes nickel (Ni), the plating layer 330 may be formed as a single layer. For example, the plating layer 330 may be a tin (Sn) plating layer. However, the present disclosure is not limited thereto, and as in the modified example to be described later, the plating layer 330 may be formed as multiple layers.

[0053] The ceramic layers 311 and 312 constituting the anode portion are in a sintered state, and the ceramic layers 311 and 312 may be integrated with each other such that it is difficult to identify the boundary between the ceramic layers 311 and 312 without using a scanning electron microscope (SEM).

[0054] In the present embodiment, for convenience, the integrated ceramic layers 311 and 312 may be referred to as a dielectric 310. Additionally, the anode portion 300 may be a sintered anode portion, and the electrode layer 320 may be an electrode sintered inside the dielectric 310.

[0055] The dielectric 310 may be disposed on one surface of the tantalum body 100, and the electrode layer 320 may be disposed inside the dielectric 310.

[0056] The electrode layer 320 may extend to one surface of the dielectric 310 (the lower surface of the dielectric 310 based on Figure 3 ).

[0057] The tantalum body 100 may penetrate a part of the dielectric 310 and be connected to the electrode layer 320.

[0058] The electrode layer 320 may be spaced apart from the molding portion 200.

[0059] Figure 15is a cross-sectional view showing a conventional tantalum capacitor. In the conventional tantalum capacitor C, when sufficient adhesion is not ensured between the lead frame 300' (spaced apart from the cathode portion 400') and the molding portion 200', interface defects occur and moisture penetrates through the interface. This degrades the characteristics of the tantalum capacitor in high-temperature and high-humidity environments and affects reliability. Additionally, in the conventional tantalum capacitor, since the tantalum body 100' and the outer electrode (formed by the portion of the lead frame 300' exposed from the molding portion 200') are connected by the tantalum wire W, there is a problem of lower storage capacity when the size of the tantalum capacitor is the same.

[0060] In the tantalum capacitor according to an embodiment of the present disclosure, the contact between the barrier electrode layers 320 and the molding portion 200 is blocked by the ceramic layers 311 and 312. Thus, the penetration of moisture through the interface can be minimized, and a tantalum capacitor with excellent reliability can be provided.

[0061] Additionally, the water permeability of the ceramic is much lower than that of the EMC. The following [Table 1] shows the results of measuring the water vapor transmission rate of the EMC and the water vapor transmission rate of the ceramic sheet under the conditions of 37.8 °C and 100% RH (relative humidity).

[0062] [Table 1]

[0063] Referring to [Table 1], the water vapor transmission rate of the ceramic sheet is substantially 0. In other words, the penetration of moisture through the ceramic layer is almost impossible, and thus the anode portion can be miniaturized. As an example, the thickness of the anode portion can be less than or equal to 100 μm, and more specifically, less than or equal to 30 μm. Since the volume of the anode portion is relatively reduced, the storage capacity of the tantalum body 100 can be maximized.

[0064] Additionally, since the anode portion 300 and the tantalum body 100 are in direct contact with each other, the tantalum wire can be omitted, and the storage capacity can be increased by maximizing the effective volume of the tantalum capacitor.

[0065] Additionally, the anode portion 300 and the tantalum core 110 can be sintered simultaneously. In this case, an alloy can be formed between the metal in the electrode layer 320 and tantalum (Ta) by sintering. Thus, the bonding strength between the anode portion 300 and the tantalum body 100 can be increased.

[0066] The cathode portion 400 can be connected to the tantalum body 100 to be used as a terminal when the tantalum capacitor is mounted on a board. The cathode portion 400 can be arranged to be spaced apart from the anode portion 300 in a first direction (X direction). The cathode portion 400 can be exposed to the second surface 2 of the molding portion 200. The cathode portion 400 is exposed to the bottom of the molding portion 200 and is used as a terminal when the tantalum capacitor is mounted on a board, and can be used as the cathode of the tantalum capacitor 1000 according to the present disclosure.

[0067] The cathode part 400 may be in the form of a lead frame. That is, in the case of the tantalum capacitor according to the first embodiment, the cathode part 400 may include a cathode lead frame. However, the present disclosure is not limited thereto, and as in the second embodiment to be described later, the cathode part 400 may be formed using a plating layer.

[0068] The cathode part 400 may be formed using a conductive metal such as a nickel / iron alloy.

[0069] In addition, although not shown in the drawings, the tantalum capacitor according to an embodiment of the present disclosure may further include a conductive adhesive layer to bond the cathode part 400 and the tantalum body 100. Such a conductive adhesive layer may be formed, for example, by coating a certain amount of a conductive adhesive containing, for example, an epoxy-based thermosetting resin and a conductive metal powder (such as silver (Ag)) and curing it, but the present disclosure is not limited thereto.

[0070] Figure 6 It is a cross-sectional view showing a tantalum capacitor 1000' according to a modified example of the first embodiment.

[0071] The plating layer 330 of the tantalum capacitor 1000' according to a modified example of the first embodiment may be formed using multiple layers. Specifically, the plating layer 330 may include a first plating layer 331 in contact with the electrode layer 320 and a second plating layer 332 provided on the first plating layer 331. Here, the first plating layer 331 may be a nickel (Ni) layer, and the second plating layer 332 may be a tin (Sn) layer.

[0072] Figure 7 It is a cross-sectional view showing a tantalum capacitor 1000'' according to a modified example of the first embodiment.

[0073] The first ceramic layer 311 of the tantalum capacitor 1000'' according to a modified example of the first embodiment may include two or more openings. Referring to Figure 7 , the first ceramic layer 311 may include two openings O 1 and O 2 , and it can be confirmed that the tantalum core 110 and the electrode layer 320 are connected through the two openings O 1 and O 2 . The two openings O 1 and O 2 may be spaced apart in the third direction (Z direction), but the present disclosure is not necessarily limited thereto, and the two openings O 1 and O 2 may be spaced apart in the second direction (Y direction). In addition, three or more openings may be formed.

[0074] Figure 8 It is a cross-sectional view showing a tantalum capacitor 1000''' according to a modified example of the first embodiment.

[0075] The molding part 200 of the tantalum capacitor 1000''' according to a modified example of the first embodiment may cover the lower surfaces of the first ceramic layer 311 and the second ceramic layer 312. A part of the plating layer 330 may be embedded in the molding part 200, and another part of the plating layer 330 may be exposed to the outside of the molding part 200. In this case, the volume of the anode part 300 may be reduced to miniaturize the tantalum capacitor.

[0076] Figure 9 is a cross-sectional view showing the tantalum capacitor 1000'''' according to a modified example of the first embodiment.

[0077] The tantalum capacitor 1000'''' according to a modified example of the first embodiment may further include an anode lead frame 340. That is, the anode lead frame 340 (instead of the plating layer) may be exposed to the lower surface of the molding part 200 and serve as a terminal when the tantalum capacitor is mounted on a board. The anode lead frame 340 may be formed of a conductive metal such as a nickel / iron alloy.

[0078] (Second Embodiment) Figure 10 is a perspective view of a tantalum capacitor according to a second embodiment of the present disclosure. Figure 11 is viewed in the second direction Figure 10 a schematic view of the tantalum capacitor in Figure 12 is along Figure 10 a cross-sectional view taken along line II-II' in

[0079] Compared with the first embodiment, the tantalum capacitor 2000 according to the second embodiment may have a cathode part 400 formed of a plating layer (instead of a lead frame). Specifically, the plating layer may include a first plating layer 410 and a second plating layer 420.

[0080] The plating layers 410 and 420 may be formed of copper (Cu), aluminum (Al), silver (Ag), tin (Sn), gold (Au), nickel (Ni), lead (Pb), chromium (Cr), titanium (Ti), or an alloy thereof, but the present disclosure is not limited thereto. For example, the plating layer may include a first plating layer 410 in contact with the silver (Ag) layer 140 of the tantalum body 100 and a second plating layer 420 provided on the first plating layer 410. Here, the first plating layer 410 may be a nickel (Ni) layer, and the second plating layer 420 may be a tin (Sn) layer.

[0081] Except for the description of the cathode part 400, the description in the first embodiment may be applied as it is, and its detailed description is omitted due to redundancy.

[0082] Figure 13 is a cross-sectional view showing the tantalum capacitor 2000' according to a modified example of the second embodiment.

[0083] Reference Figure 13 Figure 13 , in the tantalum capacitor 2000' according to the modified example of the second embodiment, the plating layer 330 of the anode portion 300 may be formed of a plurality of layers. Specifically, the plating layer 330 may include a first plating layer 331 in contact with the electrode layer 320 and a second plating layer 332 provided on the first plating layer 331. Here, the first plating layer 331 may be a nickel (Ni) layer, and the second plating layer 332 may be a tin (Sn) layer.

[0084] Figure 14 is a cross-sectional view showing a tantalum capacitor 2000'' according to another modified example of the second embodiment.

[0085] The first ceramic layer 311 of the tantalum capacitor 2000'' according to another modified example of the second embodiment may include two or more openings. Reference Figure 14 Figure 14 , the first ceramic layer 311 may include two openings O 1 and O 2 2 , and it can be confirmed that the tantalum core 110 and the electrode layer 320 are connected through the two openings O 1 and O 2 2 . The two openings O 1 and O 2 2 may be spaced apart in the third direction (Z direction), but the present disclosure is not necessarily limited thereto, and the two openings O 1 and O 2 2 may be spaced apart in the second direction (Y direction). In addition, three or more openings may be formed.

[0086] As described above, one effect of the present disclosure is to provide a tantalum capacitor having excellent reliability by minimizing the penetration of moisture through the interface.

[0087] Another effect of the present disclosure is to provide a tantalum capacitor with an increased storage capacity.

[0088] Although the exemplary embodiments have been shown and described above, it will be readily understood by those skilled in the art that variations and changes can be made without departing from the scope of the present disclosure defined by the appended claims.

Claims

1. A tantalum capacitor, comprising: A tantalum body comprising a tantalum core and a conductive polymer layer disposed on the tantalum core; a molding portion including a fifth surface and a sixth surface opposite to each other in a first direction, a third surface and a fourth surface opposite to each other in a second direction, and a first surface and a second surface opposite to each other in a third direction, the molding portion being disposed to surround the tantalum body; an anode portion, comprising a first ceramic layer in contact with the tantalum body and an electrode layer disposed on the first ceramic layer; as well as A cathode portion is connected to the tantalum body and is spaced apart from the anode portion.

2. The tantalum capacitor according to claim 1, wherein: The anode portion further includes a second ceramic layer disposed on the electrode layer.

3. The tantalum capacitor according to claim 2, wherein: The first ceramic layer, the electrode layer and the second ceramic layer are sequentially arranged along the first direction.

4. The tantalum capacitor according to claim 1, wherein The electrode layer includes one or more selected from the group consisting of nickel, tantalum, iron, niobium, cobalt, iridium, SUS304, and chromium.

5. The tantalum capacitor according to claim 1, wherein: The first ceramic layer includes at least one opening, and A portion of the tantalum core is disposed in the at least one opening.

6. The tantalum capacitor according to claim 5, wherein: The tantalum core and the electrode layer are connected through the at least one opening.

7. The tantalum capacitor according to claim 1, wherein: The anode portion further includes a plating layer connected to the electrode layer in a third direction.

8. The tantalum capacitor according to claim 7, wherein: The plating layer includes a first plating layer and a second plating layer disposed on the first plating layer.

9. The tantalum capacitor according to claim 1, wherein: The electrode layer is spaced apart from the molding part.

10. The tantalum capacitor according to claim 1, wherein: The tantalum body also includes a carbon layer disposed on the conductive polymer layer and a silver layer disposed on the carbon layer.

11. The tantalum capacitor according to claim 1, wherein: The tantalum body also includes a dielectric oxide layer disposed on a surface of the tantalum core.

12. The tantalum capacitor according to claim 5, wherein: The electrode layer directly contacts the tantalum core through the at least one opening.

13. The tantalum capacitor according to claim 1, wherein: The tantalum capacitor does not include tantalum wire.

14. The tantalum capacitor according to claim 13, wherein: The anode portion directly contacts the tantalum body.

15. The tantalum capacitor according to claim 1, wherein: The cathode portion includes a plated layer connected to the tantalum body.

16. The tantalum capacitor according to claim 2, wherein: One surface of the electrode layer in the third direction is exposed from the first ceramic layer and the second ceramic layer.

17. A tantalum capacitor, comprising: A tantalum body comprising a tantalum core and a conductive polymer layer disposed on the tantalum core; a molding portion disposed to surround the tantalum body; an anode portion disposed on one surface of the tantalum body and comprising a dielectric body and an electrode layer disposed in the dielectric body; as well as A cathode portion is connected to the tantalum body and is spaced apart from the anode portion.

18. The tantalum capacitor of claim 17, wherein: The electrode layer extends to one surface of the dielectric body.

19. The tantalum capacitor of claim 17, wherein: The tantalum body penetrates a portion of the dielectric body and is connected to the electrode layer.

20. The tantalum capacitor of claim 17, wherein: The anode part is a sintered anode part.

21. The tantalum capacitor of claim 17, wherein: The electrode layer is spaced apart from the molding part.

22. The tantalum capacitor of claim 17, wherein: The molding part covers a lower surface of the dielectric body.

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