Thinning equipment
By designing a thinning device that integrates plasma etching, microscopy and display modules, the problem of cumbersome and low safety in the semiconductor technology field is solved, and an efficient and safe thinning process is achieved.
Patent Information
- Application Number
- CN202311632304.5
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2023-11-29
- Publication Date
- 2025-05-30
AI Technical Summary
In the process of layer-by-layer thinning in the field of semiconductor technology, the operation is complicated and the thinning efficiency is low. When chemical corrosion is reduced, the operator is close to the metal corrosion liquid, which is very risky and has low safety.
A thinning device including a plasma etching module, a microscope module and a display module is designed to supply liquid in the reaction chamber through a quantitative liquid supply module to reduce the transfer step of the thinning parts to be reduced, and the automatic transmission of the thinning parts to be reduced between different modules is achieved through the transfer module.
Improve thinning efficiency, reduce operational risks and improve safety, and simplify manual operation through automated transmission steps.
Smart Images
Figure CN120072602A_ABST
Abstract
Description
Technical Field
[0001] This application relates to the field of semiconductor technology, and particularly to a thinning device. Background Art
[0002] In the field of semiconductor technology, the layer-by-layer thinning method is commonly used for failure analysis of the workpiece to be thinned. Currently, during layer-by-layer thinning, the operator needs to repeatedly shift the workpiece to be thinned, resulting in cumbersome operations and low thinning efficiency. Moreover, during chemical etching thinning, the operator needs to be in close contact with the metal etching solution, resulting in high operation risks and low safety.
[0003] In view of this, how to avoid the above drawbacks is a technical problem that needs to be solved by those skilled in the art. Summary of the Invention
[0004] To solve the above technical problems, this application provides a thinning device. The thinning device includes a plasma etching module, a microscopic module, and a display module. The plasma etching module includes a reaction chamber and a stage located in the reaction chamber. The microscopic module includes a rotatable optical microscope and a rotation driving component. The rotation driving component drives the optical microscope to rotate. The display module is communicatively connected to the optical microscope.
[0005] In an embodiment of the thinning device, the thinning device further includes a quantitative liquid supply module. The liquid outlet of the quantitative liquid supply module is located in the reaction chamber and above the stage.
[0006] In an embodiment of the thinning device, the thinning device further includes a grinding module. The grinding module includes a grinding housing, a grinding disk, a grinding disk driving component, a grinding liquid supply component, and a pressing component. The pressing component is located above the grinding disk. The grinding disk, the pressing component, and the liquid outlet of the grinding liquid supply component are all located inside the grinding housing.
[0007] In an embodiment of the thinning device, the thinning device further includes a transfer module. The transfer module is located between the grinding module and the plasma etching module.
[0008] In an embodiment of the thinning device, the transfer module includes a vertical guide rail, a horizontal guide rail, a vertical driving component, a horizontal driving component, and a manipulator. The horizontal guide rail is installed on the vertical guide rail. The manipulator is installed on the horizontal guide rail. The horizontal driving component is connected to the manipulator. The vertical driving component is connected to the horizontal guide rail.
[0009] An implementation of the thinning device, wherein the horizontal guide rail is a multi-segment horizontal guide rail, including n guide rail parts, n≥2; along the length direction of the horizontal guide rail, the first guide rail part to the nth guide rail part are slidably connected in sequence, the first guide rail part is installed on the vertical guide rail, the manipulator is installed on the nth guide rail part, and the horizontal driving component is connected to the nth guide rail part.
[0010] An implementation of the thinning device, the thinning device further includes a cleaning and drying module, the cleaning and drying module is located between the grinding module and the plasma etching module, and the transfer module realizes the transfer of the workpiece to be thinned between the grinding module, the cleaning and drying module and the plasma etching module.
[0011] An implementation of the cleaning and drying module, the cleaning and drying module includes a cleaning liquid spraying component and a drying gas blowing component.
[0012] An implementation of the thinning device, the thinning device includes an exhaust gas and waste liquid collection module, the exhaust gas and waste liquid collection module includes a liquid collection shell, and the grinding shell, the liquid outlet of the cleaning liquid spraying component, the gas outlet of the drying gas blowing component, and the reaction chamber are all located in the liquid collection shell.
[0013] An implementation of the thinning device, the thinning device includes a control device, and the control device is communicatively connected to each module of the thinning device.
[0014] In the thinning device provided by the present application, when observing the current thinning situation of the workpiece to be thinned during the thinning process, it is not necessary to transfer the workpiece to be thinned from the reaction chamber to the outside of the reaction chamber. Therefore, the transfer steps are reduced, and the thinning efficiency can be improved.
[0015] Furthermore, in the thinning device provided by the present application, since the liquid outlet of the quantitative liquid supply module is located in the reaction chamber and above the carrier table, a quantitative metal etching solution can be supplied to the workpiece to be thinned on the carrier table. With this setting, when etching the metal layer, it is not necessary to transfer the workpiece to be thinned out of the reaction chamber. Therefore, the transfer steps are reduced, and the thinning efficiency can be improved. In addition, by using the quantitative liquid supply module to supply the metal etching solution, on the one hand, the liquid supply amount of the metal etching solution can be ensured to be accurate, and on the other hand, the operator can be prevented from contacting the metal etching solution closely, thereby reducing the operation risk and improving the safety.
[0016] Furthermore, in the thinning device provided by the present application, due to the setting of the transfer module, the transfer module can replace manual labor to transfer the workpiece to be thinned between the plasma etching module and the grinding module, thus facilitating the simplification of manual operations. Description of the Drawings
[0017] Figure 1 Perspective view of an embodiment of the thinning device provided for this application;
[0018] Figure 2 is Figure 1 side view of;
[0019] Figure 3 Process diagram of the transfer module transferring the workpiece to be thinned;
[0020] Figure 4 Process diagram of the transfer module transferring the workpiece to be thinned;
[0021] Figure 5 Process diagram of the transfer module transferring the workpiece to be thinned;
[0022] Figure 6 Process diagram of the transfer module transferring the workpiece to be thinned;
[0023] Figure 7 Process diagram of the transfer module transferring the workpiece to be thinned;
[0024] Figure 8 Top view of the carrier stage;
[0025] Figure 9 Top view of the carrier block and the workpiece to be thinned.
[0026] Explanation of reference numerals is as follows:
[0027] 10 Plasma etching module, 101 Reaction cavity, 102 Molecular pump, 103 Etching gas supply pipeline, 104 Etching gas pump, 105 Upper electrode, 106 Lower electrode, 107 Radio frequency power supply, 108 Plasma source, 109 Carrier stage, 109a Positioning hole;
[0028] 20 Microscopy module;
[0029] 30 Display module;
[0030] 40 Quantitative liquid supply module;
[0031] 50 Grinding module, 501 Grinding disc;
[0032] 60 Transfer module, 601 Manipulator, 602 Vertical guide rail, 603 Horizontal guide rail, 6031 First section guide rail part, 6032 Second section guide rail part, 6033 Third section guide rail part;
[0033] 70 Exhaust gas and waste liquid collection module, 701 Liquid collecting shell, 702 Liquid pump;
[0034] 80 Top shell;
[0035] 90 Bottom shell;
[0036] 100 Carrier block;
[0037] 01 Component to be thinned. Specific embodiments
[0038] This application provides a thinning device. To enable those skilled in the art of this technology to better understand the technical solution of this application, the technical solution of this application will be further described in detail below in conjunction with the accompanying drawings and specific embodiments.
[0039] As Figure 1 and Figure 2 shown, the thinning device provided by this application includes a plasma etching module 10, a microscopic module 20, and a display module 30.
[0040] Among them, the plasma etching module 10 includes a reaction chamber 101 and a stage 109 located inside the reaction chamber 101.
[0041] Among them, the microscopic module 20 includes a rotatable optical microscope and a rotation driving component. The optical microscope is located inside the reaction chamber 101. The rotation driving component drives the optical microscope to rotate, so that the optical microscope reciprocates above the stage 109 and beside the stage 109. The rotation driving component may include a motor and a transmission component, and the motor is connected to the optical microscope through the transmission component.
[0042] Among them, the display module 30 is communicatively connected to the optical microscope to display the microscopic image of the component to be thinned observed by the optical microscope, so that the operator can see the microscopic image of the component to be thinned observed by the optical microscope from the display module 30.
[0043] The plasma etching module 10 of the above-mentioned thinning device can be used to etch the passivation layer, dielectric layer, metal nitride layer, etc. of the component to be thinned. The component to be thinned may be a semiconductor chip. The materials of the passivation layer and the dielectric layer may be one or several combinations of SiO2, SiNx, etc. The materials of the metal nitride layer may be one or several combinations of TiN, TaN, TaSiN, etc.
[0044] After etching for a period of time, the etching is paused, and the rotation driving component drives the optical microscope above the stage 109. The operator observes the component to be thinned from the display module 30 to understand the current etching situation of the component to be thinned. After the observation, if it is determined that etching needs to continue, the rotation driving component drives the optical microscope beside the stage 109, and then the etching continues. Several observations can be made during the entire etching process. Driving the optical microscope beside the stage 109 can prevent the optical microscope from interfering with the etching operation. In addition, when taking and placing the component to be thinned from the stage 109, the optical microscope is also driven beside the stage 109 to prevent the optical microscope from affecting the taking and placing operation of the component to be thinned.
[0045] In the above thinning device, during the etching of the workpiece to be thinned, it is not necessary to transfer the workpiece to be thinned from the reaction chamber to the outside of the reaction chamber when observing the current etching situation of the workpiece to be thinned. Therefore, the transfer steps are reduced, and the thinning efficiency can be improved.
[0046] In a specific embodiment, the plasma etching module 10 further includes a vacuum pumping component, an etching gas supply component, an upper electrode 105, a lower electrode 106, a radio frequency power supply 107, a plasma source 108, etc. During the etching process, the vacuum pumping component maintains a vacuum state in the reaction chamber 101, the etching gas supply component supplies etching gas into the reaction chamber 101, a high radio frequency energy field is generated between the upper electrode 105 and the lower electrode 106, and the etching gas in the reaction chamber 101 is converted into a plasma state under the action of the high radio frequency energy field.
[0047] Among them, the vacuum pumping component may include a dry pump, a molecular pump 102, etc.
[0048] Among them, the etching gas supply component may include an etching gas supply pipeline 103, an etching gas pump 104, etc. The etching gas may be one or a combination of CF 4 、CHF 3 、SF 6 and so on.
[0049] Among them, the upper electrode 105 may be provided with an etching gas channel, and the etching gas enters the reaction chamber 101 through the etching gas channel.
[0050] Among them, the radio frequency power supply 107 may apply radio frequency power only to the upper electrode 105 or the lower electrode 106, or may apply radio frequency power to both the upper electrode 105 and the lower electrode 106 at the same time. The number of radio frequency power supplies 107 may be one or two. In the figure, two radio frequency power supplies 107 are provided, one radio frequency power supply 107 applies radio frequency power to the upper electrode 105, and the other radio frequency power supply 107 applies radio frequency power to the lower electrode 106.
[0051] In a specific embodiment, the thinning device further includes a quantitative liquid supply module 40. The liquid outlet of the quantitative liquid supply module 40 is located in the reaction chamber 101 and above the carrier 109.
[0052] When thinning the workpiece to be thinned, the quantitative liquid supply module 40 is used to supply a quantitative metal etching solution to the workpiece to be thinned on the carrier 109 to corrode the metal layer of the workpiece to be thinned. The metal etching solution is generally an acid solution, for example, it may be one or a combination of HCl, HNO3, etc. The material of the metal layer may be one or a combination of Al, Cu, W, Ti, Ag, Au, Pt, Ni, etc.
[0053] Since the liquid outlet of the metering liquid supply module 40 is located inside the reaction cavity 101 and above the carrier 109, it can supply a metered amount of metal etching solution to the workpiece to be thinned on the carrier 109. With this arrangement, when etching the metal layer, there is no need to transfer the workpiece to be thinned out of the reaction cavity. Therefore, the transfer steps are reduced, and the thinning efficiency can be improved. In addition, by using the metering liquid supply module 40 to supply the metal etching solution, on the one hand, the liquid supply amount of the metal etching solution can be guaranteed to be accurate, and on the other hand, it can prevent the operator from coming into close contact with the metal etching solution, thereby reducing the operation risk and improving the safety.
[0054] In a specific embodiment, the metering liquid supply module 40 includes a liquid storage container, a metering pump, and a dropper. The liquid storage container stores the metal etching solution. The inlet of the metering pump is communicated with the inside of the liquid storage container, the outlet of the metering pump is communicated with the upper end of the dropper, the lower end of the dropper extends into the reaction cavity 101, and the liquid outlet is arranged at the lower end of the dropper.
[0055] In a specific embodiment, the thinning device further includes a grinding module 50. The grinding module 50 includes a grinding disk 501, a grinding disk driving component, and a grinding liquid supply component.
[0056] When thinning the workpiece to be thinned, the grinding module 50 can be used to grind the passivation layer, dielectric layer, metal nitride layer, etc. of the workpiece to be thinned. The materials of the passivation layer and dielectric layer can be one or several combinations of SiO2, SiNx, etc. The materials of the metal nitride layer can be one or several combinations of TiN, TaN, TaSiN, etc.
[0057] During the grinding process, the workpiece to be thinned is placed on the grinding disk, the back surface of the workpiece to be thinned contacts the grinding disk, the grinding disk driving component drives the grinding disk, and the grinding liquid supply component supplies grinding liquid to the grinding disk.
[0058] After grinding for a period of time, the grinding is paused, the workpiece to be thinned is transferred from the grinding disk to the carrier 109, then the optical microscope is driven above the carrier 109, and the operator observes the workpiece to be thinned from the display module 30 to understand the current grinding situation of the workpiece to be thinned. After the observation, if it is determined that grinding needs to continue, the optical microscope is driven to the side of the carrier 109, and then the workpiece to be thinned is transferred from the carrier 109 to the grinding disk to continue grinding. Several observations can be made during the entire grinding process.
[0059] If the layer to be ground is relatively thick, it can be etched first, and after etching to a certain thickness, it can be ground. In this way, it is beneficial to improve the thinning efficiency, and etching first and then grinding can also avoid over-etching.
[0060] In a specific embodiment, the grinding module 50 further includes a pressing member that presses the workpiece to be thinned against the grinding disk with a predetermined pressure. Such an arrangement is more conducive to ensuring uniform grinding compared to manually pressing the workpiece to be thinned against the grinding disk.
[0061] In a specific embodiment, the grinding module 50 further includes a grinding housing. The grinding disk, the liquid outlet of the grinding liquid supply member, and the above-mentioned pressing member are all located within the grinding housing. In this way, the grinding housing can prevent grinding debris and grinding liquid from splashing.
[0062] In a specific embodiment, the grinding module 50 is arranged on the side where the side door of the reaction chamber 101 is located. In this way, it is conducive to shortening the transfer distance of the workpiece to be thinned.
[0063] In a specific embodiment, the thinning device further includes a transfer module 60. The transfer module 60 is located between the grinding module 50 and the plasma etching module 10. The transfer module 60 transfers the workpiece to be thinned, enabling the workpiece to be thinned to reciprocate between the grinding disk and the stage 109. The transfer module 60 can replace manual operation for transferring the workpiece to be thinned, which is conducive to simplifying manual operation. Specifically, the transfer module 60 includes a manipulator 601 that can pick up, place, and flip the workpiece to be thinned.
[0064] During the transfer process, the side door of the reaction chamber 101 is opened. The manipulator 601 picks up the workpiece to be thinned from the stage 109 or the grinding disk, then the manipulator 601 flips the workpiece to be thinned by 180°, and then the manipulator 601 carries the workpiece to be thinned through the side opening of the reaction chamber 101 to the grinding disk or the stage 109, so that the workpiece to be thinned is supported on the grinding disk with the front side facing down or on the stage 109 with the front side facing up, and then the manipulator 601 releases the workpiece to be thinned. Of course, the manipulator 601 can also first carry the workpiece to be thinned through the side opening of the reaction chamber 101 above the grinding disk or above the stage 109 and then flip the workpiece to be thinned.
[0065] In a specific embodiment, the manipulator 601 includes a support structure and a pick-and-place structure. The pick-and-place structure is installed on the support structure and can be flipped relative to the support structure. The pick-and-place structure is a jaw-type pick-and-place structure or a suction-cup type pick-and-place structure.
[0066] In a specific embodiment, the transfer module 60 further includes a vertical guide rail 602, a horizontal guide rail 603, a vertical driving component, and a horizontal driving component. Among them, the horizontal guide rail 603 is installed on the vertical guide rail 602, and the manipulator 601 is installed on the horizontal guide rail 603. Among them, the vertical driving component is connected to the horizontal guide rail 603 and drives the horizontal guide rail 603 to move vertically along the vertical guide rail 602. Since the manipulator 601 is installed on the horizontal guide rail 603, it can move vertically together with the horizontal guide rail 603. Among them, the horizontal driving component is connected to the manipulator 601 and drives the manipulator 601 to move horizontally along the horizontal guide rail 603.
[0067] The transfer process of this transfer module 60 is as follows: The manipulator 601 picks up the workpiece to be thinned from the carrier 109 or the grinding disc, and then the vertical driving component drives the horizontal guide rail 603 to move upward, so that the manipulator 601 takes the workpiece to be thinned and moves upward away from the grinding disc or the carrier 109. Then the manipulator 601 flips the workpiece to be thinned by 180°. Then the horizontal driving component drives the manipulator 601 to move along the horizontal guide rail 603, so that the manipulator 601 takes the workpiece to be thinned and passes through the side hatch of the reaction chamber 101 to reach above the grinding disc or above the carrier 109. Then the vertical driving component drives the horizontal guide rail 603 to move downward, so that the workpiece to be thinned is supported on the grinding disc with the front side facing down or supported on the carrier 109 with the front side facing up. Then the manipulator 601 releases the workpiece to be thinned, and then the horizontal guide rail 603 and the manipulator 601 withdraw from the reaction chamber 101. Of course, the manipulator 601 can also first take the workpiece to be thinned through the side hatch of the reaction chamber 101 to reach above the grinding disc or above the carrier 109 and then flip the workpiece to be thinned.
[0068] It can be seen that the movement mode of this transfer module 60 is relatively simple (mainly vertical movement and horizontal movement), so it is relatively easy to control and relatively easy to ensure accuracy. Moreover, the required movement space is relatively small, which is conducive to the miniaturization of the thinning equipment.
[0069] In a specific embodiment, the horizontal guide rail 603 is a multi-segment horizontal guide rail, including n guide rail parts, where n≥2. Along the length direction of the horizontal guide rail 603, the first guide rail part to the nth guide rail part are sequentially slidably connected. The first guide rail part is installed on the vertical guide rail 602, and the manipulator 601 is installed on the nth guide rail part. The horizontal driving component is connected to the nth guide rail, so that it can drive the second to nth guide rail parts to slide horizontally. When the second to nth guide rail parts slide horizontally in the direction close to the first guide rail part, the horizontal guide rail 603 gradually shortens, and at this time the manipulator 601 will move in the direction close to the first guide rail part along with the nth guide rail part. When the second to nth guide rail parts slide horizontally in the direction away from the first guide rail part, the horizontal guide rail 603 gradually elongates, and at this time the manipulator 601 will move in the direction away from the first guide rail part along with the nth guide rail part.
[0070] The multi - section horizontal guide rail can extend to pass through the side hatch of the reaction chamber 101 and reach inside the reaction chamber 101, and can also shorten to withdraw from inside the reaction chamber 101 to the outside of the reaction chamber 101. After the multi - section horizontal guide rail withdraws to the outside of the reaction chamber 101, the side hatch of the reaction chamber 101 can be normally closed. When the multi - section horizontal guide rail is retracted to the shortest state, the occupied layout space is smaller, which is more conducive to thinning the equipment to a smaller size.
[0071] In a specific embodiment, as Figure 5 shown, n = 3. That is to say, the horizontal guide rail 603 is a three - section horizontal guide rail composed of a first - section guide rail part 6031, a second - section guide rail part 6032, and a third - section guide rail part 6033. The three - section horizontal guide rail has relatively good movement stability, and moreover, the overall thickness is relatively small in the shortest state. The transfer process of this transfer module 60 is as follows: The manipulator 601 picks up the workpiece to be thinned (such as Figure 3 ) from the carrier 109 or the grinding disc, and then the vertical driving component drives the horizontal guide rail 603 to move upward (such as Figure 4 ), so that the manipulator 601 takes the workpiece to be thinned and moves upward away from the grinding disc or the carrier 109. Then the manipulator 601 flips the workpiece to be thinned by 180°. Then the horizontal driving component drives the horizontal guide rail 603 to extend, so that the manipulator 601 takes the workpiece to be thinned through the side hatch of the reaction chamber 101 and reaches above the grinding disc or above the carrier 109 (such as Figure 5 ). Then the vertical driving component drives the horizontal guide rail 603 to move downward, so that the workpiece to be thinned is supported on the grinding disc with the front side facing down or supported on the carrier 109 with the front side facing up (such as Figure 6 ). Then the manipulator 601 releases the workpiece to be thinned, and then the horizontal guide rail 603 shortens, so that the manipulator 601 withdraws from the reaction chamber 101 (such as Figure 7 ). Of course, the manipulator 601 can also first take the workpiece to be thinned through the side hatch of the reaction chamber 101 and reach above the grinding disc or above the carrier 109 and then flip the workpiece to be thinned.
[0072] In a specific embodiment, the thinning device further includes a cleaning and drying module for cleaning and drying the workpiece to be thinned. The transfer module 60 realizes the transfer of the workpiece to be thinned between the grinding module 50, the cleaning and drying module, and the plasma etching module 10. The specific process is as follows: After the manipulator 601 removes the workpiece to be thinned from the reaction chamber 101, it will carry the workpiece to pass through the cleaning and drying module. The cleaning and drying module cleans the workpiece to be thinned. After cleaning, the manipulator 601 transfers the workpiece to be thinned onto the grinding disk. In this way, it can avoid the influence of etching debris on the grinding uniformity. After the manipulator 601 removes the workpiece to be thinned from the grinding disk, it will carry the workpiece to pass through the cleaning and drying module. The cleaning and drying module first cleans and then dries the workpiece to be thinned. After drying, the manipulator 601 transfers the workpiece to be thinned onto the stage 109. In this way, it can avoid the grinding debris, grinding liquid, and cleaning liquid from entering the reaction chamber 101 and causing pollution to the reaction chamber 101.
[0073] In a specific embodiment, the cleaning and drying module includes a cleaning liquid spraying component and a drying gas blowing component. The cleaning liquid spraying component sprays the cleaning liquid onto the surface of the workpiece to be thinned under pressure, so that the cleaning effect is better. The drying gas blowing component blows the drying gas onto the surface of the workpiece to be thinned under pressure, so that the drying efficiency is higher. Specifically, the cleaning liquid can be ultra-pure water (UPW). The drying gas can be high-purity nitrogen (Grade N2, GN2).
[0074] In a specific embodiment, the thinning device further includes an exhaust gas and waste liquid collection module 70, and the exhaust gas and waste liquid collection module 70 collects the grinding liquid, cleaning liquid, drying gas, and etching gas.
[0075] In a specific embodiment, the exhaust gas and waste liquid collection module 70 includes a liquid collecting shell 701 and a liquid pump 702. The liquid outlet of the cleaning liquid spraying component, the gas outlet of the drying gas blowing component, the grinding outer shell, and the reaction chamber 101 are all located inside the liquid collecting shell 701. In this way, the grinding liquid, cleaning liquid, drying gas, and etching gas can be concentrated in the liquid collecting shell 701. The liquid pump 702 is connected to the bottom of the liquid collecting shell 701 to timely pump away the grinding liquid and cleaning liquid in the liquid collecting shell 701.
[0076] In a specific embodiment, the thinning device further includes a control device. The control device communicates with each module of the thinning device to jointly control each module of the thinning device, so that each module of the thinning device works under the unified scheduling of the control module. In this way, it is more conducive to improving the thinning efficiency of the thinning device and simplifying manual operation.
[0077] In a specific embodiment, the control device communicates with the display module 30 to display one or more control data of the control device on the display module 30, so as to facilitate the operator to understand the operating state of the thinning device.
[0078] In a specific embodiment, the thinning device further includes a top shell 80 and a bottom shell 90. Larger components such as the radio frequency power supply 107, the control device, and the etching gas supply pipeline are accommodated in the bottom shell 90. The liquid collecting shell 701 is stacked above the bottom shell 90, and the display module 30 and the top shell 80 are stacked above the liquid collecting shell 701. The display module 30 is located on one side of the top shell 80. The plasma source 108 and the etching gas supply pump are accommodated in the top shell 80. In this way, the integration degree of the thinning device is relatively high and the volume is relatively small.
[0079] In a specific embodiment, as Figure 8 and Figure 9 shown, the thinning device further includes a carrier block 100. The component 01 to be thinned is bonded to the upper surface of the carrier block 100. A positioning structure is provided on the carrier stage 109. When the carrier block 100 is supported on the carrier stage 109, under the positioning action of the positioning structure, the carrier block 100 will not horizontally move relative to the carrier stage 109 or rotate around the vertical axis. In this way, the position of the component to be thinned will not change during the etching process, so that the manipulator 601 can pick up the component to be thinned from the same position of the carrier stage 109.
[0080] In a specific embodiment, as Figure 8 shown, the positioning structure on the carrier stage 109 is a positioning hole 109a. The shape of the hole side of the positioning hole 109a is the same as the shape of the side of the carrier block 100 and is non-circular. For example, it can be rectangular (rectangular in the figure), triangular, etc. When the carrier block 100 is installed in the positioning hole 109a, when the carrier block 100 has a tendency to horizontally move or rotate around the vertical axis, the side of the carrier block 100 and the hole side of the positioning hole 109a will stop each other, thereby preventing the carrier block 100 from horizontally moving and rotating around the vertical axis.
[0081] Of course, the positioning structure on the carrier stage 109 is not limited to the positioning hole 109a. For example, it can also be a positioning protrusion. When it is a positioning protrusion, the carrier block 100 is provided with a positioning groove that cooperates with the positioning protrusion.
[0082] In a specific embodiment, the vertical height of the carrier block 100 is greater than the vertical depth of the positioning hole 109a, so that when the carrier block 100 is installed in the positioning hole 109a, the upper part of the carrier block 100 is exposed outside the positioning hole 109a. With this setting, when the manipulator 601 picks up the component to be thinned from the carrier stage 109, it can clamp the carrier block 100 instead of directly clamping the component to be thinned, so that the component to be thinned is not easily damaged.
[0083] The above specific embodiments can be combined with each other without conflict.
[0084] In an application example, a component to be thinned is successively provided with a passivation layer, a first metal layer, a metal nitride layer, a dielectric layer, a second metal layer, etc. from the front side to the back side. During thinning, the passivation layer is etched away by using the plasma etching module 10. During the etching process, the etching situation is observed by using the display module 30 and the microscopic module 20 until the first metal layer is exposed. After the first metal layer is exposed, a quantitative metal etching solution is supplied to the first metal layer by using the quantitative liquid supply module 40 to etch away the first metal layer and expose the metal nitride layer. Then, the component to be thinned is transferred to a grinding plate by using the transfer module 60, and the metal nitride layer and the dielectric layer are ground away by using the grinding module 50. During the grinding process, the component to be thinned is transferred to the stage 109 by using the transfer module 60, and the grinding situation is observed by using the display module 30 and the microscopic module 20 until the second metal layer is exposed. After the second metal layer is exposed, a quantitative metal etching solution is supplied to the second metal layer by using the quantitative liquid supply module 40 to etch away the second metal layer.
[0085] The above uses specific examples to elaborate on the principle and implementation manner of the present application. The description of the above embodiments is only used to help understand the method and its core idea of the present application. It should be noted that for those of ordinary skill in the art in this technical field, without departing from the principle of the present application, several improvements and modifications can still be made to the present application, and these improvements and modifications also fall within the protection scope of the claims of the present application.
Claims
1. A thinning device, characterized in that, the thinning device includes a plasma etching module, a microscopic module and a display module. The plasma etching module includes a reaction chamber and a stage located in the reaction chamber. The microscopic module includes a rotatable optical microscope and a rotation driving component. The rotation driving component drives the optical microscope to rotate. The display module is communicatively connected to the optical microscope.
2. The thinning device according to claim 1, characterized in that, the thinning device further includes a quantitative liquid supply module. The liquid outlet of the quantitative liquid supply module is located in the reaction chamber and above the stage.
3. The thinning device according to claim 2, characterized in that, the thinning device further includes a grinding module. The grinding module includes a grinding housing, a grinding disc, a grinding disc driving component, a grinding liquid supply component and a pressing component. The pressing component is located above the grinding disc. The grinding disc, the pressing component and the liquid outlet of the grinding liquid supply component are all located in the grinding housing.
4. The thinning device according to claim 3, characterized in that, the thinning device further includes a transfer module. The transfer module is located between the grinding module and the plasma etching module.
5. The thinning device according to claim 4, characterized in that, the transfer module includes a vertical guide rail, a horizontal guide rail, a vertical driving component, a horizontal driving component and a manipulator. The horizontal guide rail is installed on the vertical guide rail. The manipulator is installed on the horizontal guide rail. The horizontal driving component is connected to the manipulator. The vertical driving component is connected to the horizontal guide rail.
6. The thinning device according to claim 5, characterized in that, the horizontal guide rail is a multi-segment horizontal guide rail, including n guide rail parts, n≥2; along the length direction of the horizontal guide rail, the first guide rail part to the nth guide rail part are sequentially slidably connected. The first guide rail part is installed on the vertical guide rail. The manipulator is installed on the nth guide rail part. The horizontal driving component is connected to the nth guide rail part.
7. The thinning device according to claim 4, characterized in that, the thinning device further includes a cleaning and drying module. The cleaning and drying module is located between the grinding module and the plasma etching module. The transfer module realizes the transfer of the workpiece to be thinned between the grinding module, the cleaning and drying module and the plasma etching module.
8. The thinning device according to claim 7, characterized in that, the cleaning and drying module includes a cleaning liquid spraying component and a drying gas blowing component.
9. The thinning device according to claim 8, characterized in that, the thinning device includes an exhaust gas and waste liquid collection module. The exhaust gas and waste liquid collection module includes a liquid collection shell. The grinding housing, the liquid outlet of the cleaning liquid spraying component, the gas outlet of the drying gas blowing component and the reaction chamber are all located in the liquid collection shell.
10. The thinning device according to any one of claims 1-9, characterized in that, the thinning device includes a control device. The control device is communicatively connected to each module of the thinning device.