Substrate processing apparatus

Abstract

The present invention relates to a substrate processing apparatus, and more particularly, to a substrate processing apparatus which performs substrate processing by high pressure and low pressure. A substrate processing apparatus includes: an outer tube having a protection space formed therein and a first inlet formed in a lower portion thereof; and an inner tube in which a reaction space is formed, a second inlet is formed in the lower part, a part of the inner tube is accommodated in the outer tube, and the part forming the second inlet protrudes to the lower part of the outer tube.

Description

Technical Field

[0001] The present invention relates to a substrate processing apparatus, and more particularly to a substrate processing apparatus that performs substrate processing at high pressure and low pressure. Background Art

[0002] A substrate processing apparatus can be understood as processing semiconductor processes for substrates such as wafers. As an example of a substrate processing apparatus, in order to perform heat treatment of a substrate, a reactor using a boat can be advantageously used.

[0003] The reactor is configured such that a boat loaded with substrates in a predetermined number (for example, 180) rises in a loading area to perform heat treatment, or descends to the loading area to unload the heat-treated substrates.

[0004] The reactor has a tube that forms a reaction space for accommodating the rising boat and is isolated from the outside. Generally, the tube is formed of a quartz material having good heat transfer characteristics to effectively perform the heat treatment process.

[0005] In the case where the internal temperature and pressure of the above-mentioned tube are significantly different from the external temperature and pressure due to material characteristics, the tube may be damaged. Such damage to the tube reduces the reliability of the substrate processing apparatus itself and there is a problem of reducing the overall process yield.

[0006] Therefore, it is necessary to design a substrate processing apparatus that employs a technology that can ensure the reliability of the product and improve the process yield.

[0007] In addition, the substrate processing apparatus is used to supply raw material gases, reaction gases, carrier gases, etc. and apply appropriate temperature and pressure to form a thin film of a desired thickness on the substrate.

[0008] In addition, during the process of forming such a thin film, there is a problem of reducing the yield due to residues inside the thin film or on the surface of the thin film.

[0009] Therefore, it is required to develop technologies for pretreating, treating during the process, and treating after the process of the above-mentioned residues, and it is also required to develop a substrate processing apparatus for effectively applying the developed technologies. Summary of the Invention

[0010] (Problems to be Solved)

[0011] An object of the present invention is to provide a substrate processing apparatus that can minimize various defects remaining in a thin film before, during, or after the formation of the thin film on the substrate, in order to solve the above-mentioned problems.

[0012] In addition, another object of the present invention is to provide a substrate processing apparatus that performs a high-pressure process in a reaction space having a pressure higher than atmospheric pressure and a low-pressure process in a reaction space having a pressure lower than atmospheric pressure in order to improve the thin film yield of the substrate.

[0013] In addition, another object of the present invention is to provide a substrate processing apparatus that controls such pressure changes by configuring a reaction tube to include an inner tube for performing a process and an outer tube for controlling the pressure outside the inner tube, and thus is easily controllable according to the pressure change of the reaction tube during the process.

[0014] In addition, another object of the present invention is to provide a substrate processing apparatus that maintains the pressure between the outer tube and the inner tube higher than the reaction space of the inner tube during the process for processing the substrate, and thus, even when the inner tube is damaged, the damaged range can be limited to the inside of the outer tube.

[0015] In addition, another object of the present invention is to provide a substrate processing apparatus in which the inner tube and the outer tube form a dome-shaped top, thereby ensuring the structural stability of the inner tube and the outer tube and preventing the formation of eddy currents or stagnation of the air flow inside the inner tube.

[0016] In addition, another object of the present invention is to provide a substrate processing apparatus that constitutes an internal manifold and an external manifold corresponding to the inner tube and the outer tube, thereby enabling gas supply or exhaust to the inner tube and the outer tube and ensuring the convenience of design and assembly.

[0017] In addition, another object of the present invention is to provide a substrate processing apparatus that prevents leakage between the internal manifold and the cover flange when a high pressure is formed in the reaction space during the process for substrate processing.

[0018] In addition, another object of the present invention is to provide a substrate processing apparatus that can sense the overall temperature of the reaction space through a vertical cylindrical inner tube having a dome-shaped top.

[0019] (Means for Solving the Problem)

[0020] The present invention is proposed to achieve the object of the present invention as described above. The present invention discloses a substrate processing apparatus, including: an outer tube having a protection space formed therein and a first inlet formed at the lower part; an inner tube having a reaction space formed therein and a second inlet formed at the lower part, and a part of the inner tube is accommodated in the outer tube, and the part forming the second inlet protrudes downward from the outer tube; a manifold assembly that supports the upper outer tube and the lower inner tube at intervals; a cover flange that seals the lower part of the manifold assembly; wherein, the manifold assembly includes: an outer manifold that supports the lower end of the outer tube and forms a first inner space connected to the protection space; an inner manifold, the upper end of which is tightly fastened to the lower end of the outer manifold through a coupling member to support the lower end of the inner tube, and forms a second inner space connected to the reaction space.

[0021] The outer tube can be formed of a metal material, and the inner tube can be formed of a non-metal material.

[0022] The outer tube and the inner tube can be formed of non-metal materials.

[0023] The outer tube can be constituted by a vertical cylindrical shape having a first dome-shaped top; the inner tube can be constituted by a vertical cylindrical shape having a second dome-shaped top.

[0024] The outer manifold has: a first side wall that forms the first inner space; a first upper flange that extends outward around the upper part of the first side wall and supports the lower end of the outer tube; a first lower flange that extends outward around the lower part of the first side wall, is combined with the inner manifold, and forms a plurality of first fastening parts for fastening the coupling member along the periphery. The inner manifold has: a second side wall that forms the second inner space; a second upper flange that extends outward around the upper part of the second side wall, is combined with the outer manifold, and forms a plurality of second fastening parts for fastening the coupling member along the periphery; a second lower flange that extends outward around the lower part of the second side wall and is sealed by the cover flange; wherein, the first lower flange and the second upper flange can be combined through the coupling member.

[0025] The inner diameter of the first side wall of the outer manifold can be larger than the inner diameter of the second side wall of the inner manifold.

[0026] The outer manifold can form an outer gas supply port for supplying an inert gas and an outer gas exhaust port for discharging the inert gas.

[0027] The outer manifold can form an outer air extraction port connected to an external vacuum pump to form the pressure of the protection space at a low pressure lower than the atmospheric pressure.

[0028] The internal manifold may form an internal gas supply port for supplying process gas and an internal gas exhaust port for discharging the process gas.

[0029] The internal manifold may form an internal evacuation port connected to an external vacuum pump to form the pressure of the reaction space at a low pressure below atmospheric pressure.

[0030] The internal manifold may form a thermocouple fastening port on the second sidewall, and the thermocouple fastening port fastens a thermocouple protection tube provided with a thermocouple for measuring the temperature of the reaction space.

[0031] The substrate processing apparatus further includes: a plurality of clamping modules formed at scattered positions on the side surface of the cover flange; an internal evacuation unit that evacuates the reaction space through the manifold assembly; wherein, when the cover flange is lifted and lowered, an O-ring is interposed between the upper surface of the cover flange and the bottom surface of the manifold assembly and they approach each other at a first distance; when the reaction space is depressurized to below atmospheric pressure by evacuation through the internal evacuation unit, an O-ring is interposed between the upper surface of the cover flange and the bottom surface of the manifold assembly and they are adjacent to each other at a second distance smaller than the first distance, and the plurality of clamping modules can clamp the cover flange and the lower part of the manifold assembly adjacent to each other at the second distance through the O-ring.

[0032] The substrate processing apparatus further has a bottom plate that is fixed while maintaining a space below the cover flange; the plurality of clamping modules are dispersedly arranged on the bottom plate and each has a clamp that forms a clamping channel facing the side surface of the cover flange, and by driving the clamp, the cover flange and the lower part of the manifold assembly adjacent to each other at the second distance can be clamped in the clamping channel.

[0033] Each of the clamping modules includes: the clamp that forms a clamping channel facing the side surface of the cover flange; a clamp bracket that vertically supports the clamp; an actuator fixed to the bottom plate and connected to the clamp bracket through a rod to move the clamp bracket and the clamp forward or backward; wherein, by driving of the actuator, the clamp can move between a locked position for clamping and an unlocked position for releasing the clamping.

[0034] A lifting plate is further provided below the bottom plate, and the lifting plate is spaced from the bottom plate by the elastic force of an elastic part; the elastic part is interposed between the bottom plate and the lifting plate and can provide the elastic force for the upper surface of the cover flange and the bottom surface of the manifold assembly to approach each other at the first distance.

[0035] The elastic part may include springs interposed at multiple positions between the lifting plate and the bottom plate.

[0036] The internal manifold structure may form the lower part of the manifold assembly and has a second lower flange facing the upper surface of the side part of the cover flange, so that the plurality of clamping modules clamp the cover flange and the second lower flange adjacent to each other at the second interval through an O-ring.

[0037] The substrate processing apparatus includes a thermocouple protection tube vertically disposed in the reaction space of the inner tube, with its lower part led out through the internal manifold, and a plurality of thermocouples inserted therein. The thermocouples have detection parts for sensing temperatures at different positions within the reaction space; the reaction space is divided into a top area formed by a second dome-shaped top and a reaction area below the top area; the thermocouple protection tube has an extension tube with an upper part that extends while bending towards the top area, and the detection part of at least one thermocouple can be located within the extension tube.

[0038] The thermocouple protection tube includes: the extension tube at the upper part; a vertical tube below the extension tube; a lower tube formed by bending from the vertical tube and led out to the outside through the side wall of the internal manifold; wherein, the extension tube, the vertical tube and the lower tube can be integrally formed.

[0039] (Advantages of the Invention)

[0040] The substrate processing apparatus of the present invention depressurizes after pressurizing the reaction space to an appropriate environment before, during or after forming a thin film on the substrate. Therefore, it has the advantage of improving the thin film characteristics.

[0041] In addition, the substrate processing apparatus of the present invention has a double tube structure composed of an inner tube and an outer tube. Therefore, the inner tube can be prevented from being directly exposed to the external environment through the outer tube, and further has the advantage of preventing damage to the inner tube due to the environmental difference between the external environment and the reaction space inside the inner tube.

[0042] In addition, the substrate processing apparatus of the present invention maintains the pressure in the protection space of the outer tube the same as or higher than the pressure in the reaction space of the inner tube during the process of processing the substrate. Therefore, in the case where the inner tube is damaged for some unknown reason, it has the advantage of preventing the outward diffusion of particles and the like to the outside of the outer tube through the high pressure in the protection space of the outer tube.

[0043] In addition, the substrate processing apparatus of the present invention can prevent damage caused by the inner tube and limit the damage range caused by the inner tube inside the outer tube, and further has the advantages of ensuring the reliability of the substrate processing apparatus and improving the process yield.

[0044] In addition, the substrate processing apparatus of the present invention makes the inner tube and the outer tube have a dome-shaped top. Therefore, through the dome-shaped top, the pressure is evenly distributed over the upper parts of the inner tube and the outer tube, thus ensuring structural stability. In addition, it has the advantage of preventing the formation of eddy currents or stagnation of the air flow inside the inner tube. Accordingly, it has the advantages of ensuring the reliability of the product and improving the process efficiency and process throughput.

[0045] In addition, the substrate processing apparatus of the present invention forms an internal manifold and an external manifold at the respective lower parts of the inner tube and the outer tube. Therefore, the substrate processing apparatus of the present invention has the advantage of being able to supply and exhaust gas independently for the inner tube and the outer tube. In addition, the gas supply and exhaust structure is concentrated at the lower parts of the inner tube and the outer tube, thereby ensuring the convenience of design and assembly.

[0046] In addition, the substrate processing apparatus of the present invention has the advantage that after narrowing the distance between the internal manifold and the cover flange by reducing the pressure in the reaction space, it can be clamped. Accordingly, the substrate processing apparatus of the present invention has the advantage of preventing leakage between the internal manifold and the cover flange during the high-pressure process for processing the substrate.

[0047] In addition, the substrate processing apparatus of the present invention forms a reaction space using a vertical cylindrical inner tube having a dome-shaped top, and can sense the temperature at a plurality of temperature sensing positions in the reaction space including the lower part of the dome-shaped top. Therefore, it has the following advantages: it can sense the temperature of the entire reaction space inside the internal part having the dome-shaped top, and can control the heating of the entire reaction space for processing the substrate evenly.

[0048] In addition, the substrate processing apparatus of the present invention has the following advantage: in order to make the pressure in the protection space of the outer tube the same as or higher than the pressure in the reaction space of the inner tube during the process for processing the substrate, gas can be independently supplied to and exhausted from the reaction space and the protection space. Description of the Drawings

[0049] Figure 1 is a cross-sectional view showing the appearance of the first position of the substrate processing apparatus of the present invention.

[0050] Figure 2 is showing Figure 1 the cross-sectional view of the appearance of the second position of the substrate processing apparatus.

[0051] Figure 3 is explaining Figure 1 the exploded perspective view of the structure of the manifold assembly in the substrate processing apparatus.

[0052] Figure 4 is explaining Figure 1 the cross-sectional view of the assembled state of the manifold assembly in the substrate processing apparatus.

[0053] Figure 5 It is an explanatory Figure 1 partial sectional view of a substrate processing apparatus in which a manifold assembly and a lid flange are held by a clamping module.

[0054] Figure 6 It is an example Figure 1 partial sectional view of the clamping release state of the clamping module in the substrate processing apparatus.

[0055] Figure 7 It is Figure 1 perspective view of a thermocouple protection tube provided with a thermocouple in the substrate processing apparatus.

[0056] Figure 8 It shows Figure 1 schematic diagram of the first embodiment of the gas common part in the substrate processing apparatus.

[0057] Figure 9 It shows Figure 1 schematic diagram of the second embodiment of the gas common part in the substrate processing apparatus.

[0058] Figure 10 It shows Figure 1 schematic diagram of the third embodiment of the gas common part in the substrate processing apparatus.

[0059] Figure 11 It shows Figure 1 schematic diagram of the fourth embodiment of the gas common part in the substrate processing apparatus.

[0060] Figure 12 It shows Figure 1 schematic diagram of the fifth embodiment of the gas common part in the substrate processing apparatus.

[0061] Figure 13 It shows Figure 1 waveform diagram of the sixth embodiment of the gas common part in the substrate processing apparatus.

[0062] Figure 14 It is for explaining Figure 1 waveform diagram of an embodiment in which the gas common part in the substrate processing apparatus performs an operation.

[0063] Figure 15 It is for explaining Figure 1 waveform diagram of another embodiment in which the gas common part in the substrate processing apparatus performs an operation.

[0064] (Explanation of reference numerals)

[0065] 10: Heater 20: Outer tube

[0066] 30: Inner tube 40: Annular lid

[0067] 50: External manifold 60: Internal manifold

[0068] 70: Cover flange 80: Cassette

[0069] 90: Rotary plate 100: Thermocouple protection tube Detailed implementation manner

[0070] Hereinafter, the substrate processing apparatus of the present invention will be described with reference to the accompanying drawings as follows.

[0071] As Figure 1 shown, the substrate processing apparatus of the present invention includes: an outer tube 20 that forms a protection space 22 inside and has a first inlet formed at the lower part; an inner tube 30 that forms a reaction space 32 inside and has a second inlet formed at the lower part, and a part of the inner tube 30 is accommodated in the outer tube 20, and the part forming the second inlet protrudes downward from the outer tube 20; a manifold assembly that supports the upper outer tube 20 and the lower inner tube 30 at intervals; and a cover flange 70 that seals the lower part of the manifold assembly.

[0072] The present invention exemplifies a substrate processing apparatus that performs a process for processing a substrate.

[0073] For the process for processing a substrate performed by the substrate processing apparatus, examples include a process for forming a film on a substrate such as a wafer or annealing.

[0074] The substrate processing apparatus of the present invention can perform a high-pressure process in which the reaction space has a pressure higher than atmospheric pressure and a low-pressure process in which the reaction space has a pressure lower than atmospheric pressure before forming a thin film. As an example, the low-pressure process can be performed after the high-pressure process.

[0075] In this case, the substrate processing apparatus of the present invention can be understood as preprocessing the substrate by performing a pressure change process of the above-mentioned high-pressure process and low-pressure process before forming a thin film.

[0076] Through the above-mentioned preprocessing, film defects caused by impurities or other reasons can be eliminated from the interfacial lattice of the substrate.

[0077] For example, when the surface of the substrate is contaminated with chlorine, chlorine forms a weak bonding state with the silicon atoms of the substrate.

[0078] At this time, if hydrogen is used to make the reaction space have an appropriate temperature and an appropriate high pressure above atmospheric pressure, then as a light atom, hydrogen can penetrate to a predetermined depth from the surface of the silicon lattice structure in addition to the surface of the substrate.

[0079] Therefore, high-pressure hydrogen is promoted to react with chlorine impurities to form a by-product of hydrogen chloride, and is separated from the silicon surface. The separated by-product can be discharged to the reactor or outside the chamber during the process of reducing the pressure in the chamber to a low pressure.

[0080] Then, the thermal vibration of silicon crystal atoms is increased under high pressure, and impurities weakly bonded to the silicon surface atoms are removed through the increased thermal vibration. Therefore, the recrystallization or migration phenomenon on the substrate surface is promoted, and an annealing effect can be obtained.

[0081] This recrystallization makes the molecular bonds between the elements constituting the thin film stronger. Therefore, even if impurities still remain, they react with the semiconductor surface again to prevent the adhesion of impurities.

[0082] In addition, the substrate processing apparatus of the present invention can perform a high-pressure process in which the reaction space has a high pressure higher than the atmospheric pressure and a low-pressure process in which the reaction space has a low pressure lower than the atmospheric pressure during the formation of the thin film, and exemplarily, the low-pressure process can be performed after the high-pressure process.

[0083] In this case, the substrate processing apparatus of the present invention makes the reaction space have a high pressure above the atmospheric pressure by using an appropriate gas during the formation of the thin film, and then makes the pressure of the reaction space have a low pressure lower than the atmospheric pressure, thereby improving the characteristics of a part of the thickness of the thin film.

[0084] Exemplarily, in the case of a TiN thin film, if a part of the thin film is formed, the supply of the source gas is stopped to stop film formation, and in this state, hydrogen (H2) is injected into the reaction space to make the reaction space have a high pressure.

[0085] During the high-pressure period, not only the density of hydrogen molecules is increased, but also the activity of the hydrogen molecule gas becomes faster.

[0086] Thus, the reaction of hydrogen molecules with residual chlorine (Cl) bonded weakly or chlorine (Cl) bonded firmly is more activated, and is reduced to hydrogen chloride (HCl) gas which is beneficial for exhaust.

[0087] Furthermore, the recrystallization of the elements constituting the thin film is promoted in the high-pressure reduction environment to improve the quality of the thin film. In particular, this recrystallization can make the molecular bonds between the elements constituting the thin film stronger.

[0088] On the other hand, elements such as hydrogen molecules exemplarily described in this process and injected into the reaction space to form a high pressure are gases that can remove impurities by finally discharging the by-products formed by bonding with impurities in the thin film.

[0089] As the next step, if the reaction space has a low pressure, impurities such as residual chlorine (Cl) are discharged in the state of hydrogen chloride (HCl) gas.

[0090] More specifically, if the reaction space is depressurized from a high pressure to an atmospheric pressure level, by-products in the gaseous state of hydrogen chloride (HCl) can move towards the surface of the film or outside the film.

[0091] More specifically, during the process of depressurizing the reaction space from a high pressure to an atmospheric pressure level, by-products deep within the film move towards the surface of the film, while by-products relatively adjacent to the surface of the film can move outside the film.

[0092] After that, if the reaction space is depressurized from an atmospheric pressure to a low pressure through forced exhaust, by-products in the gaseous state of hydrogen chloride (HCl) that have moved towards the surface of the film or outside the film and remain in the chamber are discharged outside the chamber, and impurities can ultimately be removed.

[0093] Ultimately, through this high-pressure process - low-pressure process, that is, the pressure change process, weak bonds between various defective residues within the TiN film and the film elements are broken, and impurities resulting from the breakage are removed more effectively than before. Defects in the crystal structure of the film or other organic substances are more effectively removed for annealing.

[0094] Then, a raw material gas is injected into the reaction space to form the remaining thickness of the TiN film.

[0095] In addition, the substrate processing apparatus of the present invention can be configured such that after forming a film, the reaction space has a high pressure higher than the atmospheric pressure, and then the reaction space has a low pressure lower than the atmospheric pressure.

[0096] In this case, the substrate processing apparatus of the present invention can improve the characteristics of the film after undergoing the above-described pressure change process after forming the film. This specific improvement can be understood through the above examples, and thus a detailed description is omitted.

[0097] It can be as Figure 1 and Figure 2 Implement the substrate processing apparatus of the present invention to have a structure capable of performing a pressure change process including the above-described high-pressure process and low-pressure process.

[0098] Figure 1 and Figure 2 As an example of the substrate processing apparatus, a reactor is exemplified.

[0099] Figure 1 and Figure 2 The reactor is referred to as a substrate processing apparatus for ease of explanation.

[0100] Figure 1 is a cross-sectional view of the substrate processing apparatus for showing the first position of the thermocouple protection tube 100 inside, corresponding to Figure 3 the 1-1 cross-sectional part.

[0101] Then, Figure 2 is a cross-sectional view of a substrate processing apparatus for showing a second position of an internal gas supply pipe 69, corresponding to Figure 3 the 2-2 cross-sectional portion of

[0102] The substrate processing apparatus is divided based on the partition wall CA into an upper part constituting the heater 10 and a lower part for loading the susceptor 80.

[0103] The heater 10 is formed above the partition wall CA, and has a heating space 12 inside, and the outer tube 20 and the inner tube 30 are accommodated in the heating space 12.

[0104] The heating space 12 can be formed in a cylindrical shape with an inlet at the lower part and a closed top, corresponding to the shapes of the outer tube 20 and the inner tube 30 accommodated inside.

[0105] The partition wall CA is configured to have a through region corresponding to the inlet of the heating space 12.

[0106] A heater base 14 with a predetermined thickness is interposed above the partition wall CA to support the heater 10 on the heater base 14.

[0107] The heater 10 can be exemplified as including a plurality of heating modules (not shown) distinguished by height, and the heating temperature can be controlled individually for each heating module.

[0108] The substrate processing apparatus of the present invention has an outer tube 20 and an inner tube 30.

[0109] The outer tube 20 is formed of a vertical cylinder with a first dome-shaped top, and a protection space 22 is formed inside, and a first inlet is formed at the lower part.

[0110] In addition, the outer tube 20 has an annular outer flange 28 extending outward from the first inlet.

[0111] At this time, the protection space 22 is a space for controlling pressure as a space formed as an interval between the outer tube 20 and the inner tube 30.

[0112] For the protection space 22, when the reaction space 32 of the inner tube 30 has a pressure above atmospheric pressure, the pressure of the protection space 22 can have a high pressure higher than the reaction space 32 by a predetermined degree.

[0113] In addition, for the protection space 22, when the reaction space 32 is at a low pressure below atmospheric pressure, the pressure of the protection space remains at atmospheric pressure, or can have a pressure higher than the low-pressure reaction space 32 by a predetermined degree and lower than atmospheric pressure.

[0114] Therefore, the protection space 22 can be understood as an interval space or a pressure control space, which plays a role in preventing the spread of the pollution range caused by particles in the case of damage to the inner tube 30.

[0115] The inner tube 30 is configured as a vertical cylinder with a second dome-shaped top, and a reaction space 32 is formed inside, and a second inlet can be formed at the lower part.

[0116] In addition, the inner tube 30 can be configured to be partially accommodated in the outer tube 20, and the part forming the second inlet protrudes downward from the outer tube 20.

[0117] Furthermore, the inner tube 30 can have an annular inner flange 38 extending outward from the second inlet.

[0118] Here, the outer flange 28 of the outer tube 20 and the inner flange 38 of the inner tube 30 can have the same outer diameter.

[0119] On the other hand, the outer tube 20 is formed of a metal material, and the inner tube 30 can be formed of a non-metal material. As another example, both the outer tube 20 and the inner tube 30 can be formed of non-metal materials.

[0120] Exemplarily, stainless steel (SUS) can be used as the metal material, and quartz can be used as the non-metal material.

[0121] The outer tube 20 can be configured to have a uniform spacing distance between the inner side wall and the outer side wall of the inner tube 30 while accommodating a part of the inner tube 30 inside.

[0122] Accordingly, the outer tube 20 is configured to have an inner diameter larger than the outer diameter of the side wall of the inner tube 30.

[0123] That is, the first inlet of the protection space 22 of the outer tube 20 is formed to have an inner diameter larger than the second inlet of the reaction space 32 of the inner tube 30.

[0124] The first dome-shaped top of the outer tube 20 and the second dome-shaped top of the inner tube 30 are spaces kept at intervals from each other, and can be formed into various shapes by the manufacturer.

[0125] As an example, the dome-shaped tops of the outer tube 20 and the inner tube 30 can be formed of hemispheres with the same curvature.

[0126] Thus, when the outer tube 20 and the inner tube 30 are combined, a protection space 22 can be formed between the outer tube 20 and the inner tube 30.

[0127] As described above, the embodiment of the present invention has a double-tube structure with the outer tube 20 and the inner tube 30.

[0128] Therefore, damage to the inner tube 30 due to the environmental difference between the external environment and the environment of the internal reaction space 32 can be prevented.

[0129] In addition, embodiments of the present invention form the outer tube 20 and the inner tube 30 separately to each have a dome-shaped top.

[0130] The dome-shaped structure can effectively disperse the internal pressure and the external pressure. Therefore, the outer tube 20 and the inner tube 30 can ensure safety against pressure through the dome-shaped tops.

[0131] Then, the dome-shaped top can make the air flow smooth. Therefore, the inner tube 30 can have the advantage of preventing the formation of eddies or partial stagnation of the air flow in the upper part of the reaction space.

[0132] The inner tube 30 and the outer tube 20 are configured to have the above-mentioned pressure difference in order to prevent by-products, process gases in the reaction space, particles, etc. from diffusing to the outside of the outer tube 20 through the high pressure in the protection space 22 of the outer tube 20 in the case where the inner tube 30 is damaged for some unknown reason.

[0133] On the other hand, as Figure 3 and Figure 4 shown, the present invention has a manifold assembly that forms a first internal space 59 and a second internal space 68. The first internal space 59 is connected to the protection space 22 at the lower part of the outer tube 20, and the second internal space 68 is connected to the reaction space 32 at the lower part of the inner tube 30.

[0134] Then, the manifold assembly can support the outer tube 20 and the inner tube 30 respectively so that the outer tube 20 and the inner tube 30 are kept spaced apart from each other.

[0135] For this purpose, the manifold assembly includes an external manifold 50, an internal manifold 60, and an annular cover 40.

[0136] Then, the lower part of the above-mentioned manifold assembly is closed by a cover flange 70.

[0137] The annular cover 40 covers the outer flange 28 of the outer tube 20 at the upper part and is configured to be combined with the external manifold 50.

[0138] Accordingly, the outer flange 28 is interposed between the combined annular cover 40 and the external manifold 50.

[0139] More specifically, the annular cover 40 can form a plurality of fastening parts for fastening the combined parts at the edge, and the external manifold 50 can form a plurality of fastening parts for fastening the combined parts at the edge of a first upper flange 51 to be described later.

[0140] Thus, the combined parts combine the fastening parts facing each other of the annular cover 40 and the external manifold 50, and further, the annular cover 40 and the external manifold 50 can be combined.

[0141] At this time, the coupling member can be understood as a screw (or, a nut), and the plurality of fastening portions can be understood as screw holes (or, bolt holes).

[0142] In addition, the annular cover 40 can be configured as an annulus having a horizontal portion 44 and a first vertical portion 42. The horizontal portion 44 faces the upper surface of the outer flange 28 of the outer tube 20, and the first vertical portion 42 is formed at the edge portion.

[0143] At this time, the outer tube 20 can be inserted into the annular through-hole of the annular cover 40.

[0144] The first vertical portion 42 of the annular cover 40 is formed at a position separated from the outer flange 28. While arranging screw holes (or bolt holes) as fastening portions along the annular edge portion, the first vertical portion 42 can penetrate vertically.

[0145] The outer manifold 50 supports the lower end portion of the outer tube 20 and forms a first internal space 59 connected to the protection space 22.

[0146] At this time, the protection space 22 and the first internal space 59 can form an independent space that is interconnected.

[0147] The first internal space 59 is formed to provide a protection space 22 when the inner tube 30 is inserted into the inner part of the outer tube 20, so as to provide an appropriate spaced space between the two tubes.

[0148] Since the diameter of the inner tube 30 is smaller than the diameter of the outer tube 20, the diameter of the second side wall of the inner manifold 60 is also smaller than the diameter of the first side wall of the outer manifold 50. Therefore, the first internal space 59 can be formed naturally.

[0149] On the other hand, the outer manifold 50 can have a first side wall 55, a first upper flange 51, and a first lower flange 53.

[0150] The first side wall 55 can be configured to form a cylindrical first internal space 59.

[0151] In addition, the first side wall 55 forms an external gas exhaust port 54 and an external gas supply port 52, and further may include an external air extraction port (not shown).

[0152] The external gas exhaust port 54, as a structure for discharging the inert gas injected into the protection space 22, can be connected to an external exhaust line 702 described later.

[0153] The external gas supply port 52, as a structure for injecting the inert gas into the protection space 22, can be connected to a first supply pipe 602 described later.

[0154] The external air extraction port is structured to be connected to an external vacuum pump 750 to form the pressure of the protection space 22 at a low pressure below atmospheric pressure, and can be connected to an external vacuum extraction line 762 described later.

[0155] The first upper flange 51 may be configured to extend outward around the upper part of the first side wall 55 to support the lower end of the outer tube 20, that is, the external flange 28.

[0156] At this time, as described above, the first upper flange 51 may form a plurality of fastening parts for fastening the combined parts at the edge.

[0157] As an example, screw holes (or bolt holes) corresponding to the fastening parts may be arranged along the edge at the position of the fastening parts of the annular cover 40 at the edge of the first upper flange 51, and then the fastening parts of the annular cover 40 may penetrate vertically.

[0158] The first lower flange 53 is configured to extend outward around the lower part of the first side wall 55 and be combined with the internal manifold 60, and a plurality of first fastening parts for fastening the combined parts are formed along the periphery.

[0159] On the other hand, the external manifold 50 may also have fastening parts 56 that extend laterally at multiple positions of the first upper flange 51 and have vertical through-holes.

[0160] The fastening part 56 can be combined with the upper structure on the upper part of the annular cover 40 through a bolt 58 passing through the through-hole.

[0161] Here, the upper structure may be at least one of the partition wall CA, the heater base 14, and the heater 10. The combination of the bolt 58 and the through-hole may be exemplified by a combination part for combining the fastening part 56 and the upper structure, and the combination part can be variously deformed and implemented according to the intention of the manufacturer.

[0162] Through the structure of the external manifold 50, the annular cover 40 and the external manifold 50 can be combined while intervening in the external flange 28 of the outer tube 20.

[0163] In addition, the external manifold 50 can be combined with the upper structure located above the annular cover 40, that is, at least one of the partition wall CA, the heater base 14, and the heater 10, by using the fastening part 56.

[0164] Then, the first lower flange 53 of the external manifold 50 is combined with the second upper flange 61 of the internal manifold 60 across the internal flange 38 of the inner tube 30.

[0165] The internal manifold 60 is combined with the lower part of the external manifold 50 to form a second internal space 68 that supports the lower end of the inner tube 30 and is connected to the reaction space 32.

[0166] At this time, the reaction space 32 and the second internal space 68 form an independent and interconnected space.

[0167] The internal manifold 60 may have a second side wall 65, a second upper flange 61, and a second lower flange 63.

[0168] The second side wall 65 may be configured to form a cylindrical second internal space 68.

[0169] In addition, the second side wall 65 may include: an internal gas supply port 62 for supplying process gas, an internal gas exhaust port 64 for discharging the process gas; and an internal evacuation port 66.

[0170] The internal gas supply port 62, as a structure for supplying process gas to the reaction space 32, may be connected to a second gas supply pipe 622 described later.

[0171] The internal gas exhaust port 64, as a structure for discharging the process gas injected into the reaction space 32, may be connected to an internal exhaust line 722 described later.

[0172] The internal evacuation port 66, as a structure for connecting to an external vacuum pump 750 to form the pressure of the reaction space 32 at a low pressure lower than atmospheric pressure, may be connected to an internal vacuum evacuation line 742 described later.

[0173] The second upper flange 61 may be configured to extend outward around the upper part of the second side wall 65 and be combined with the external manifold 50, and a plurality of second fastening portions for fastening the combined components may be formed along the periphery.

[0174] More specifically, the second upper flange 61 is configured to support the lower end portion of the inner tube 30, that is, the internal flange 38, and be combined with the first lower flange 53 of the external manifold 50.

[0175] That is, the first lower flange 53 of the external manifold 50 and the second upper flange 61 of the internal manifold 60 may be combined by the combination of corresponding first fastening portions and second fastening portions using a combining component such as a screw (or bolt).

[0176] Here, the first fastening portion and the second fastening portion may be exemplified by screw holes (or bolt holes).

[0177] At this time, the internal flange 38 of the inner tube 30 may be interposed between the first lower flange 53 of the external manifold 50 and the second upper flange 61 of the internal manifold 60 for combination.

[0178] In addition, the edge portion of the second upper flange 61 of the internal manifold 60 may further have a second vertical portion 67 to form a second fastening portion.

[0179] The second vertical portion 67 may be formed in a region corresponding to the edge portion of the first lower flange 53 of the outer manifold 50 at a position where it separates from the inner flange 38.

[0180] Accordingly, the second vertical portion 67 may be formed to vertically penetrate these holes while arranging screw holes (or bolt holes) serving as the second fastening portion along the edge portion.

[0181] Therefore, the second vertical portion 67 of the first lower flange 53 and the second upper flange 61 may be joined by a joining member such as a screw (or bolt), and as a result, the outer manifold 50 and the inner manifold 60 may be joined with the inner flange 38 interposed therebetween.

[0182] The second lower flange 63 is configured to extend outward around the lower part of the second side wall 65 and is closed by the cover flange 70.

[0183] As described above, the present invention forms the inner manifold 60 and the outer manifold 50 at the lower parts of the inner pipe 30 and the outer pipe 20, respectively.

[0184] Therefore, the inner pipe 30 and the outer pipe 20 can be spaced apart, and gas supply and exhaust can be independently performed for the inner pipe 30 and the outer pipe 20. Moreover, the gas supply and exhaust structures are concentrated at the lower parts of the inner pipe 30 and the outer pipe 20, and thus the convenience of the design and assembly of the substrate processing apparatus can be ensured.

[0185] On the other hand, the substrate processing apparatus of the present invention may have a plurality of sealing portions provided at various positions.

[0186] For example, the sealing portions may be respectively interposed between the bottom surface of the outer flange 28 and the upper surface of the first upper flange 51, between the bottom surface of the first lower flange 53 and the upper surface of the inner flange 38, and between the bottom surface of the inner flange 38 and the upper surface of the second upper flange 61.

[0187] Regarding the sealing portions, exemplary may be constituted by an O-ring OR, and O-ring grooves (not shown) for inserting a part of the O-ring OR may be formed on the upper surface of the first upper flange 51, the bottom surface of the first lower flange 53, and the upper surface of the second upper flange 61.

[0188] On the other hand, referring to Figure 5 and Figure 6 , in the substrate processing apparatus of the present invention, the cover flange 70, the bottom plate 200, the lifting plate 210, and the clamping module 300 will be described in detail.

[0189] The cover flange 70, which is a structure that moves up and down below the second lower flange 63 of the inner manifold 60, may have various structures.

[0190] The cover flange 70 moves up and down, with its upper surface closely adhering to the second lower flange 63 of the internal manifold 60, thereby sealing the second internal space 68.

[0191] Here, the second internal space 68 is connected to the reaction space 32 in the upper part to form a single space. Therefore, it can be understood that when the cover flange 70 closely adheres to the second lower flange 63, it seals both the reaction space 32 inside the inner tube 30 and the second internal space 68 of the internal manifold 60 at the same time.

[0192] The cover flange 70 can be configured in a disc shape and can thus cover the lower part of the internal manifold 60.

[0193] The cover flange 70 is linked to the rise and fall of the lifting plate 210 to move up or down.

[0194] The cover flange 70 moves up so that the edge of its upper surface has a first distance Tg from the bottom surface of the internal manifold 60, thereby closing the lower part of the internal manifold 60.

[0195] Thus, the cover flange 70 covers the lower part of the internal manifold 60, and can thus isolate the reaction space 32 of the inner tube 30 connected to the inside of the internal manifold 60 from the outside.

[0196] In addition, a turntable 90 for mounting the susceptor 80 may be provided on the upper part of the cover flange 70.

[0197] The turntable 90 is configured to be combined with the lower part of the susceptor 80 mounted on the upper part and receives a rotational force from the drive unit 400 in the lower part.

[0198] Accordingly, the turntable 90 can be configured to rotate the susceptor 80 in the upper part by the rotational force of the drive unit 400.

[0199] Thus, when the susceptor 80 is rotated during the process by the turntable 90, the gas for reaction can be uniformly supplied to the substrate loaded on the susceptor 80, and as a result, the production yield can be increased.

[0200] At this time, the susceptor 80 can rise through the first inlet of the inner tube 30 and the channels of the manifold assembly to perform a process flow on the loaded substrate.

[0201] In addition, the susceptor 80 can descend through the first inlet of the inner tube 30 and the channels of the manifold assembly to unload the substrate that has completed the process flow.

[0202] On the other hand, a bottom plate 200, a lifting plate 210, a clamping module 300, and a drive unit 400 are formed in the lower part of the cover flange 70.

[0203] First, the bottom plate 200 can be fixed while being kept at a parallel interval in the lower part of the cover flange 70.

[0204] More specifically, the bottom plate 200 is structured to be combined with the lid flange 70 through vertical rods. The upper part of the vertical rod is threadedly combined with the lid flange 70, and the lower part of the vertical rod is threadedly combined with the bottom plate 200. Thus, the bottom plate 200 and the lid flange 70 are spaced apart from each other in parallel.

[0205] At this time, the bottom plate 200 is used to set the clamping modules 300 described later. At this time, multiple clamping modules 300 can be dispersedly arranged at multiple positions of the bottom plate 200.

[0206] The clamping module 300 includes a clamp 310, and the clamp 310 forms a clamping channel 312 facing the side surface of the lid flange 70.

[0207] At this time, the clamping module 300 is configured to drive the clamp 310 to clamp the lid flange 70 and the second lower flange 63 of the internal manifold 60 that are closely attached at a second distance within the clamping channel 312.

[0208] In addition, the clamping module 300 has a clamp 310, a clamp bracket 320, and an actuator 330.

[0209] The clamp 310 forms the clamping channel 312 facing the side surface of the lid flange 70 as described above. At this time, the clamping channel 312 can be of a clip type.

[0210] The clamp bracket 320 vertically supports the clamp 310 and can be configured in a plate shape.

[0211] The actuator 330 is fixed to the bottom surface of the bottom plate 200 and is connected to the clamp bracket 320 through a rod 332.

[0212] The actuator 330 drives the rod 332, and thus can move the clamp bracket 320 and the clamp 310 forward or backward.

[0213] Therefore, the clamp 310 can move between a locking position (equivalent to Figure 5 ) for clamping and an unlocking position (equivalent to Figure 6 ) for releasing the clamping under the drive of the actuator 330.

[0214] A lifting plate 210 is formed at the lower part of the bottom plate 200 described above. The lifting plate 210 is configured to be spaced apart from the bottom plate 200 by the elastic force of the elastic part.

[0215] At this time, the elastic part can be a spring 212 interposed between the bottom plate 200 and the lifting plate 210.

[0216] When the spring 212 causes the cover flange 70 to rise and come into contact with the bottom surface of the internal manifold 60, it can provide elastic force so that the upper surface of the cover flange 70 and the bottom surface of the internal manifold 60 are in close contact while having a first spacing Tg through the O-ring.

[0217] The lifting plate 210 is movably coupled to be spaced apart from the bottom plate 200 by a plurality of pins 214 inserted into the spring 212, and the spacing between the lifting plate 210 and the bottom plate 200 can be maintained by the elasticity of the spring 212.

[0218] The lifting plate 210 is coupled to a lifting module (not shown) that provides a lifting force by the driving of a motor and can be lifted and lowered.

[0219] The lifting plate 210 is lifted and lowered integrally with the upper bottom plate 200, cover flange 70, turntable 90, and susceptor 80.

[0220] The spring 212 can buffer the vibration generated when the lifting plate 210 is lifted and lowered, and when the lifting plate 210 rises, it can provide the elasticity for the cover flange 70 to be in close contact with the bottom surface of the internal manifold 60 at the target position.

[0221] Thus, the lower parts of the above-mentioned cover flange 70 and internal manifold 60 are clamped by the clamp 310, and can be maintained in a state of being in close contact with a second spacing.

[0222] Therefore, even if a high-pressure process for processing the substrate is performed in the reaction space 32 later, the edges of the cover flange 70 and the internal manifold 60 will not open by more than the second spacing due to the high pressure, but can maintain an airtight state through close contact.

[0223] Hereinafter, the combination between the internal manifold 60 and the cover flange 70 through the above-mentioned cover flange, bottom plate 200, lifting plate 210, and clamping module 300 will be described.

[0224] On the other hand, as Figure 6 shown, for the cover flange 70 of the present invention, the cover flange 70 can approach the second lower flange 63 with a first spacing Tg therebetween through the O-ring.

[0225] At this time, the cover flange 70 and the second lower flange 63 spaced apart by the first spacing Tg have a thickness Th greater than the height Tc of the clamping channel 312 of the clamp 310 of the plurality of clamping modules 300.

[0226] Thus, there is a problem that the cover flange 70 and the second lower flange 63 at this time are difficult to be clamped inside the clamping channel 312.

[0227] To overcome this problem, the substrate processing apparatus of the present invention is configured with an internal pumping unit 740 that performs pumping on the reaction space 32 of the inner tube 30 described later.

[0228] The internal exhaust unit 740 is a structure for exhausting the reaction space 32 so that the reaction space 32 has a pressure lower than normal pressure, which will be described in more detail later.

[0229] In order to shorten the spacing distance between the cover flange 70 and the second lower flange 63 , air extraction may be performed through the internal air extraction part 740 .

[0230] More specifically, if the pressure of the reaction space 32 of the exhaust inner tube 30 through the internal exhaust portion 740 is lower than normal pressure, the top of the cover flange 70 and the bottom surface of the second lower flange 63 of the internal manifold 60 are adjacent to each other with an O-ring between them at a second distance smaller than the first distance Tg.

[0231] More specifically, due to the rise of the cover flange 70 , the upper surface of the cover flange 70 and the bottom surface of the second lower flange 63 of the internal manifold 60 are respectively in close contact with the O-ring and further approach each other at the first distance Tg via the O-ring.

[0232] Afterwards, if the pressure of the reaction space 32 of the exhaust inner tube 30 through the internal exhaust part 740 is lower than the normal pressure, the top of the cover flange 70 further rises due to the pressure difference with the outside, thereby shrinking the O-ring. At the same time, the top of the cover flange 70 and the bottom surface of the second lower flange 63 of the internal manifold 60 can be adjacent to each other at a second distance smaller than the first distance Tg.

[0233] In this process, the vacuuming of the internal vacuuming part 740 may be understood as sequentially performing slow vacuuming and main vacuuming.

[0234] According to this, if Figure 5 As shown, the cover flange 70 and the second lower flange 63 that are closely attached at the second interval may have a thickness that can be clamped by the clamping channels 312 of the clamps 310 of the plurality of clamping modules 300 .

[0235] Therefore, if Figure 5 As shown, the plurality of clamping modules 300 may clamp the cover flange 70 and the second lower flange 63 of the internal manifold 60 which are tightly attached at a second interval via an O-ring.

[0236] At this time, the first distance Tg and the second distance can be understood as having a difference formed by the contraction of the O-ring OR as a sealing part inserted between the bottom surface of the internal manifold 60 and the upper surface of the cover flange 70 due to the decompression of the internal exhaust part 740 .

[0237] For the purpose of explaining the embodiment, the second distance may be exemplified as the bottom surface of the inner manifold 60 and the upper surface of the cover flange 70 contact each other without a gap as the O-ring OR shrinks.

[0238] An embodiment of the present invention is that decompression can also be utilized when unclamping the lid flange 70 and the internal manifold 60 clamped by the clamp 310 after the completion of a high-pressure process for processing a substrate.

[0239] That is, one embodiment of the present invention is that after a high-pressure process for processing a substrate, the pressure in the reaction space 32 of the inner tube 30 in a high-pressure state is first reduced to atmospheric pressure through exhaust, and then the pressure is reduced to a value lower than atmospheric pressure through pumping, so that the lid flange 70 can be adjacent to the internal manifold 60 at a second distance.

[0240] At this time, after the lid flange 70 and the internal manifold 60 are adjacent at the second distance, the clamping module 300 drives the clamp 310 from the locked position to the unlocked position, and thus the clamping of the lid flange 70 and the internal manifold 60 can be released.

[0241] In this process, the reaction space 32 of the inner tube 30 has a low pressure. After shortening the distance between the lid flange 70 and the internal manifold 60, the internal manifold 60 and the lid flange 70 can be clamped or unclamped.

[0242] Therefore, an embodiment of the present invention has the advantage that leakage between the internal manifold 60 and the lid flange 70 can be prevented by the high pressure during the process for processing a substrate.

[0243] On the other hand, referring to Figure 1 、 Figure 3 and Figure 7 , the thermocouple protection tube 100 of the substrate processing apparatus of the present invention will be described in detail.

[0244] The present invention forms a reaction space 32 by using a vertical cylindrical inner tube 30 having a domed second domed top.

[0245] In this case, the reaction space 32 can be divided into a top region formed by the domed top and a reaction region below the top region where the susceptor 80 is located for performing a process.

[0246] An embodiment of the present invention may have a thermocouple and a thermocouple protection tube 100 to be able to sense the temperature of the entire reaction space 32 including the upper top region in addition to the reaction region where the susceptor 80 is located.

[0247] As Figure 1 and Figure 3 shown, the thermocouple protection tube 100 of the present invention may include a thermocouple protection tube insertion end 104 for inserting a thermocouple into the thermocouple protection tube 100 in the inner tube 30.

[0248] More specifically, a thermocouple fastening port for fastening the thermocouple protection tube 100 may be formed on the second side wall 65 of the internal manifold 60.

[0249] At this time, at the thermocouple fastening port, there may be a thermocouple protection tube insertion end 104 for inserting the thermocouple protection tube 100.

[0250] The thermocouple protection tube insertion end 104 is configured to penetrate the second side wall 65 of the internal manifold 60 and is configured to guide the lower tube 103 described below in which the thermocouple protection tube 100 is provided inside.

[0251] That is, the thermocouple protection tube 100 is configured to be vertically provided in the reaction space 32 of the inner tube 30, and the lower part is led out through the internal manifold 60.

[0252] More specifically, the thermocouple protection tube 100 may include: an upper extension tube 101; a vertical tube 102 continuously and vertically formed on the extension tube; and a lower tube 103 connected to the vertical tube and bent from the vertical tube for easy external lead-out.

[0253] At this time, the extension tube 101, the vertical tube 102, and the lower tube 103 are made of quartz material and are formed integrally, and a sealed tube can be formed for the reaction space 32.

[0254] The extension tube 101 is located in the top area at the upper part in the reaction space 32.

[0255] The vertical tube 102 is located in the reaction area where the susceptor 80 is located in the reaction space 32 and extends downward to the internal manifold 60.

[0256] The lower tube 103 is located in the second internal space 68 of the internal manifold 60.

[0257] In particular, the lower tube 103 penetrates the thermocouple protection tube insertion end 104 of the second side wall 65 of the internal manifold 60 and is led out to the outside, and an inlet for inserting a plurality of thermocouples TC1 to TC5 is formed at the end of the led-out lower tube 103.

[0258] On the other hand, the plurality of thermocouples TC1 to TC5 are inserted into the thermocouple protection tube 100 through the inlet of the lower tube 103, and can be configured to respectively have detection parts for sensing temperatures at mutually different positions in the reaction space 32.

[0259] At this time, the detection part can be understood as a sensor that generates an electric current according to the sensed temperature, and can be understood as being formed at the extended ends of each of the plurality of thermocouples TC1 to TC5.

[0260] As an embodiment of the present invention, as Figure 7 shown, an example is given of having 5 thermocouples.

[0261] In an embodiment of the present invention, preferably, the detection part of at least one thermocouple is located inside the extension tube 101.

[0262] That is, for the thermocouple protection tube 100, the detection part of at least one thermocouple is located in the top area, while the detection parts of the remaining thermocouples can be located in the reaction area.

[0263] The positions of the detection parts of the multiple thermocouples TC1 - TC5, that is, the multiple temperature sensing positions are Figure 7 exemplified as SP1 - SP5.

[0264] Among them, the temperature sensing position SP1 is in the top area, while the remaining temperature sensing positions SP2 - SP5 are located in the reaction area.

[0265] In an embodiment of the present invention, the temperature sensing positions SP1 - SP5 are set at different heights. The setting of the temperature sensing positions can be understood as designing the positions of the detection parts of the multiple thermocouples TC1 - TC5 to be formed.

[0266] Due to the above setting of the temperature sensing positions SP1 - SP5, furthermore, the multiple thermocouples TC1 - TC5 are configured to be arranged in the inner tube of the thermocouple protection tube 100 and the detection parts are respectively located at different temperature sensing positions.

[0267] Exemplarily, the detection part of the thermocouple TC1 is located at the temperature sensing position SP1, the detection part of the thermocouple TC2 is located at the temperature sensing position SP2, the detection part of the thermocouple TC3 is located at the temperature sensing position SP3, the detection part of the thermocouple TC4 is located at the temperature sensing position SP4, and the detection part of the thermocouple TC5 is located at the temperature sensing position SP5.

[0268] Each of the thermocouples TC1 - TC5 can perform temperature sensing by the detection part and can output a current corresponding to the sensed temperature through a pair of terminals.

[0269] As described above, the multiple thermocouples TC1 - TC5 each have a pair of terminals for outputting a current corresponding to the sensed temperature, and the terminals of the multiple thermocouples TC1 - TC5 are configured to be led out through the end of the lower tube 103 extending to the outside of the internal manifold 60.

[0270] As described above, the upper end of the extension tube 101 of the thermocouple protection tube 100 and the temperature sensing position SP1 of the thermocouple TC1 are preferably formed to be at a height above the middle of the top area.

[0271] Exemplarily, the upper end of the extension tube 101 can be formed to be at the lower part of the uppermost part of the dome - shaped top.

[0272] Then, the extension pipe 101 at the upper part of the thermocouple protection pipe 100 can be formed into a shape that extends toward the top region and bends inward.

[0273] Exemplarily, the extension pipe 101 can be formed into a shape that bends inward to the inner side of the top region to have an inclination angle.

[0274] Then, the shape of the thermocouple protection pipe 100 can be determined so as not to obstruct gas flow or form eddy currents in the reaction space 32.

[0275] For this purpose, the extension pipe 101 constituting the upper part of the thermocouple protection pipe 100 can be formed into a curved shape that bends inward to the top region to have a bend.

[0276] More specifically, the extension pipe 101 can have the following shape: having the same curvature as the second dome-shaped top of the inner pipe 30 and maintaining a uniform spacing from the second dome-shaped top, and extending while bending upward to the upper part of the second dome-shaped top.

[0277] Then, the vertical pipe 102 of the thermocouple protection pipe 100 is vertically fixed to maintain a uniform spacing distance from the inner wall of the inner pipe 30.

[0278] The extension pipe 101, the vertical pipe 102, and the lower pipe 103 of the thermocouple protection pipe 100 can be configured to have the same inner diameter and outer diameter.

[0279] In contrast, it can be configured to have a larger inner diameter and a larger outer diameter as it goes downward when the number of thermocouples inserted inside is large.

[0280] On the other hand, an embodiment of the present invention has a heater 10 for heating the reaction space 32 to process a substrate in a high-temperature environment.

[0281] The heater 10 heats the outer pipe 20 and the inner pipe 30 in the heating space 12.

[0282] At this time, the reaction space 32 of the inner pipe 30 should be heated to have a uniform temperature distribution as a whole.

[0283] Therefore, the heater 10 also needs to be configured to independently control heating according to the position.

[0284] For this purpose, the heater 10 can be made to have a corresponding plurality of heating modules (not shown) according to the temperature sensing position. At this time, each heating module is preferably controlled to have a separate heating temperature.

[0285] Then, corresponding to each of the heating modules corresponding to the above temperature sensing positions SP1 to SP5, one of the temperature sensing positions SP1 to SP5, i.e., the temperature sensing position SP1, can be set to correspond to the heating module for heating the top region.

[0286] Then, the remaining temperature sensing positions SP2 to SP5 can be set to correspond one-to-one with the remaining heating modules for heating the reaction region where the susceptor 80 is disposed.

[0287] As described above, the thermocouples TC1 to TC5 for sensing temperature form a detection unit according to the temperature sensing positions SP1 to SP5, and sense the temperature at each position of the top region and the reaction region.

[0288] In order to correspond to the sensing signals of the thermocouples at the corresponding temperature sensing positions, each heating module can be independently controlled for the heating temperature.

[0289] Therefore, the embodiment of the present invention can perform temperature sensing and temperature control for the top region formed by using the vertical cylindrical inner tube 30 having a dome-shaped top, and further can perform temperature sensing and control heating for the entire reaction space 32. As a result, a uniform temperature can be maintained for the entire reaction space 32 for processing the substrate.

[0290] Hereinafter, through Figures 8 to 15 The gas common part of the present invention will be described in detail.

[0291] The embodiment of the present invention is configured to perform a series of processes in which the reaction space 32 has a high pressure higher than the atmospheric pressure and then a low pressure lower than the atmospheric pressure for at least one of before depositing a thin film, during the deposition of the thin film, and after depositing the thin film.

[0292] To this end, the embodiment of the present invention can have a gas common part that pressurizes, depressurizes, and exhausts the protection space 22, and pressurizes, depressurizes, and exhausts the reaction space 32.

[0293] For example, the gas common part can perform a process in the reaction space 32 having a high pressure higher than the atmospheric pressure and then a low pressure lower than the atmospheric pressure.

[0294] At this time, when the reaction space 32 is above the atmospheric pressure, the first internal pressure PO of the protection space 22 is maintained at a more important pressure with a uniform difference compared to the second internal pressure PI of the reaction space 32.

[0295] Then, the gas common part can make the reaction space 32 have a low pressure lower than the atmospheric pressure to check for leaks before the process for processing the substrate, or to clamp the cover flange 70 and the internal manifold 60.

[0296] Referring toFigures 8 to 13 , an embodiment of the present invention having the gas common part will be described; referring to Figure 14 and Figure 15 , the change in the second internal pressure PI of the reaction space 32 and the first internal pressure PO of the protection space 22 occurring through the gas common part can be understood.

[0297] On the other hand, referring to Figures 1 to 2 of the embodiment, the heater 10, the outer tube 20, and the inner tube 30 can be understood, so repeated descriptions are omitted.

[0298] On the other hand, as the gas injected into the protection space 22, nitrogen can be used as the inert gas.

[0299] In addition, as the gas injected into the reaction space 32, a process gas including an inert gas or a process gas for processing a substrate, etc., can be a gas containing one or more elements such as hydrogen (H), oxygen (O), nitrogen (N), chlorine (Cl), fluorine (F), etc.

[0300] As an example, the process gas can be utilized in the form of hydrogen (H2), deuterium (D2), oxygen (O2), water vapor (H2O), ammonia (NH3), etc.

[0301] On the other hand, various embodiments of the gas common part of the present invention will be described below with reference to the drawings.

[0302] As a first embodiment, as Figure 8 shown, the gas common part of the present invention can have various structures as a structure that separately controls the exhaust of the reaction space 32 and the protection space 22 to perform a variable pressure process including a high-pressure process higher than atmospheric pressure and a low-pressure process lower than atmospheric pressure for a plurality of substrates entering the reaction space.

[0303] For example, the gas common part has a first gas supply part 600 and a second gas supply part 620. The first gas supply part 600 supplies an inert gas to the protection space 22 through a first gas supply pipe 602, and the second gas supply part 620 supplies a process gas to the reaction space 32 through a second gas supply pipe 622.

[0304] In addition, the gas common part of the present invention can include an external exhaust part 791 and an internal exhaust part 792. The external exhaust part 791 performs exhaust on the protection space 22, and the internal exhaust part 792 performs exhaust on the reaction space 32.

[0305] In addition, the gas common part can include an internal air extraction part 740. The internal air extraction part 740 is connected to an internal air extraction port 66 and a vacuum pump 750, and evacuates the reaction space 32 at a pressure lower than atmospheric pressure.

[0306] The first gas supply unit 600 includes a first gas supply valve V1 connected to a first gas supply pipe 602; at this time, the first gas supply valve V1 can control the supply amount of inert gas to supply gas at various pressures, and thus can exhaust or pressurize the inert gas.

[0307] At this time, the first gas supply pipe 602 can be connected to an external gas supply port 52 that supplies inert gas to the external manifold 50.

[0308] That is, the first gas supply pipe 602 can be connected to the protection space 22 of the outer pipe 20 through the external manifold 50.

[0309] The second gas supply unit 620 includes a second gas supply valve V4 connected to a second gas supply pipe 622; the second gas supply valve V4 can control the supply amount of process gas and control the process gas at various pressures.

[0310] At this time, the second gas supply pipe 622 can be connected to an internal gas supply port 62 that supplies process gas to the internal manifold 60.

[0311] That is, the second gas supply pipe 622 can be connected to the reaction space 32 of the inner pipe 30 through the internal manifold 60.

[0312] The external exhaust unit 791 is a structure for controlling exhaust for the protection space 22 and can have various structures.

[0313] For example, the external exhaust unit 791 can include an external exhaust line 702 and a first high-pressure control unit 700. The external exhaust line 702 connects an external gas exhaust port 54 and an external exhaust device 793, and the first high-pressure control unit 700 is provided on the external exhaust line 702 to control the exhaust of inert gas flowing into the protection space 22.

[0314] At this time, the external exhaust line 702 can be connected to the external gas exhaust port 54 that discharges inert gas from the external manifold 50.

[0315] That is, the external exhaust line 702 can communicate with the protection space 22 of the outer pipe 20 through the external manifold 50.

[0316] The first high-pressure control unit 700 is a structure for controlling the first internal pressure PO of the protection space 22 through the external exhaust line 702 and can have various structures.

[0317] For example, the first high-pressure control unit 700 can include a first high-pressure exhaust valve V2, a first high-pressure control valve OCV, and a first pressure relief valve REV1. The first high-pressure exhaust valve V2 and the first high-pressure control valve OCV are provided on the external exhaust line 702, and the first pressure relief valve REV1 is formed on a first safety line 706 formed in parallel with the external exhaust line 702.

[0318] Here, the first high-pressure exhaust valve V2 can be opened to exhaust the protective space 22 of the outer tube 20.

[0319] In addition, the first high-pressure control valve OCV can control the exhaust volume through the external exhaust line 702.

[0320] In addition, if a pressure above a preset high pressure is sensed, the first pressure relief valve REV1 can be mechanically opened to exhaust.

[0321] In addition, the first high-pressure control unit 700 can include a first pressure gauge (not shown) provided in the external exhaust line 702.

[0322] In this case, a separately configured control unit (not shown) checks the pressure of the protective space 22 through the first pressure gauge (not shown) provided in the external exhaust line 702, and can transmit a control signal to control the first high-pressure control valve OCV, etc.

[0323] The internal exhaust unit 792, as a structure for exhausting the reaction space 32, can have various structures.

[0324] For example, the internal exhaust unit 792 can include an internal exhaust line 722 and a second high-pressure control unit 720. The internal exhaust line 722 connects the internal gas exhaust port 64 and the external exhaust device 793. The second high-pressure control unit 720 is provided on the internal exhaust line 722 to control the exhaust of inert gas and process gas flowing into the reaction space 32.

[0325] At this time, the internal exhaust line 722 is connected to the internal gas exhaust port 64 that discharges the process gas of the internal manifold 60, and the internal vacuum pumping line 742 is connected to the internal pumping port 66 for forming the low pressure of the internal manifold 60.

[0326] That is, the internal exhaust line 722 and the internal vacuum pumping line 742 can be connected to the reaction space 32 of the inner tube 30 through the internal manifold 60.

[0327] The second high-pressure control unit 720, as a structure for controlling the second internal pressure PI of the reaction space 32 through the internal exhaust line 722, can have various structures.

[0328] For example, the second high-pressure control unit 720 is configured to include a second high-pressure exhaust valve V3, a second high-pressure control valve ICV, and a second pressure relief valve REV2. The second high-pressure exhaust valve V3 and the second high-pressure control valve ICV are provided on the internal exhaust line 722. The second pressure relief valve REV2 is formed on a second safety line 726 formed in parallel with the internal exhaust line 722.

[0329] Here, the second high-pressure exhaust valve V3 can be opened to exhaust the reaction space 32 of the inner tube 30.

[0330] In addition, the second high-pressure control valve ICV can control the exhaust gas volume passing through the internal exhaust line 722.

[0331] In addition, if a pressure above a preset high pressure is sensed, the second pressure relief valve REV2 can be mechanically opened to exhaust gas.

[0332] On the other hand, in order to exhaust gas for the same pressure above the high pressure, it is preferable to open the first pressure relief valve REV1 and the second pressure relief valve REV2.

[0333] In addition, the second high-pressure control unit 720 may include a second pressure gauge (not shown) provided on the internal exhaust line 722.

[0334] In this case, the control unit checks the pressure of the reaction space 32 through the second pressure gauge (not shown) provided on the internal exhaust line 722 and transmits a control signal to control the second high-pressure control valve ICV, etc.

[0335] Details of the operating relationship between the first pressure gauge and the second pressure gauge will be described below.

[0336] The internal evacuation unit 740, which is a structure connecting the internal evacuation port 66 and the vacuum pump 750 and evacuating the reaction space 32 at a pressure lower than atmospheric pressure, can have various structures.

[0337] For example, the internal evacuation unit 740 may include a second low-pressure regulating valve V5, a second main evacuation valve V7, and a second slow evacuation valve V6.

[0338] The second low-pressure regulating valve V5 is provided on the internal vacuum evacuation line 742, and the second low-pressure regulating valve V5 can be opened to form a low pressure in the reaction space 32 of the inner tube 30.

[0339] In addition, the second main evacuation valve V7 is provided on the second main evacuation line 744 connected to the internal vacuum evacuation line 742 and can control the evacuation gas volume passing through the internal vacuum evacuation line 742.

[0340] In addition, the second slow evacuation valve V6 is provided on the second slow evacuation line 746 in parallel with the second main evacuation valve V7 and can control the evacuation gas volume passing through the second slow evacuation line 746.

[0341] On the other hand, the operating relationship related to controlling the pressure by the gas common unit of the above first embodiment will be described below.

[0342] To perform pressure control on the protection space 22 of the outer tube 20, an inert gas can be supplied to the outer tube 20 from the first gas supply line 602, or exhaust control of the outer tube 20 can be performed through the external exhaust line 702.

[0343] In addition, to control the pressure in the reaction space 32 of the inner tube 30, a process gas is supplied to the inner tube 30 from the second gas supply line 622 or exhaust control of discharging the inner tube 30 is performed through the internal exhaust line 722, and evacuation can be performed on the inner tube 30 through the internal evacuation line 742.

[0344] More specifically, when it is desired that the pressure in the reaction space 32 is above atmospheric pressure, the second high-pressure control unit 720 can adjust the exhaust volume of the internal exhaust line 722 so that the second internal pressure PI is higher than atmospheric pressure.

[0345] At this time, to make the first internal pressure PO higher than the second internal pressure PI, the first high-pressure control unit 700 can adjust the exhaust volume of the external exhaust line 702.

[0346] In particular, in this case, to make the first internal pressure PO have a higher pressure than the second internal pressure PI with a uniform pressure difference, the exhaust volumes of the external exhaust line 702 and the internal exhaust line 722 can be adjusted respectively.

[0347] For this purpose, the second high-pressure control valve ICV controls the exhaust volume through the internal exhaust line 722 based on a preset value that can be set in advance.

[0348] In addition, the first high-pressure control valve OCV can be configured to control the exhaust volume through the external exhaust line 702, and further control the pressure of the external exhaust line 702 based on the pressure of the internal exhaust line 722.

[0349] Then, when it is desired that the pressure in the reaction space 32 is lower than atmospheric pressure, the first high-pressure control unit 700 and the second high-pressure control unit 720 control the exhaust of the external exhaust line 702 so that the first internal pressure PO remains at atmospheric pressure, and adjust the exhaust and evacuation volumes of the internal exhaust line 722 and the internal evacuation line 742 respectively so that the second internal pressure PI has a low pressure.

[0350] More specifically, the external exhaust line 702 is opened through the first high-pressure control valve OCV, and thus the first internal pressure PO can be maintained at atmospheric pressure.

[0351] In addition, the second internal pressure PI in the reaction space 32 of the inner tube 30 can be reduced by the evacuation of the second slow evacuation valve V6, and then can be reduced again by the evacuation of the second main evacuation valve V7.

[0352] At this time, the second low-pressure regulating valve V5 remains open during the evacuation performed through the second slow evacuation valve V6 and the second main evacuation valve V7.

[0353] As an example, the second slow evacuation valve V6 can control the evacuation volume until the second internal pressure PI of the reaction space 32 of the inner tube 30 reaches, for example, 10 Torr, and the second main evacuation valve V7 can control the evacuation volume until the reaction space 32 of the inner tube 30 reaches a low pressure below 10 Torr.

[0354] Then, the evacuation acting on the internal vacuum evacuation line 742, the second main evacuation line 744, and the second slow evacuation line 746 can depend on the evacuation force of the vacuum pump 750.

[0355] Then, the first high-pressure control valve OCV, the second high-pressure control valve ICV, and the vacuum pump 750 can be connected to the scrubber 800 through the washing line 802.

[0356] The scrubber 800 is configured to perform the exhaust for the first high-pressure control valve OCV, the second high-pressure control valve ICV, and the vacuum pump 750, and can be included in the external exhaust device 793.

[0357] On the other hand, for the above operating relationship, the control unit checks the pressure of the protection space 22 through the first pressure gauge, and adjusts the exhaust volume of the protection space 22 through the first high-pressure control valve OCV according to the difference from the preset pressure value, and thus the pressure of the protection space 22 can be controlled.

[0358] In addition, the control unit checks the pressure of the reaction space 32 through the second pressure gauge, and adjusts the exhaust volume of the reaction space 32 through the second high-pressure control valve ICV according to the difference from the preset pressure value, and thus the pressure of the reaction space 32 can be controlled.

[0359] On the other hand, it is set that the pressure of the protection space 22 is always greater than the pressure of the reaction space 32, and further, it can be set to maintain the same pressure difference as the reaction space 32.

[0360] In this case, the first pressure gauge can be omitted, and instead, a predetermined pressure difference is set based on the pressure of the reaction space 32 confirmed by the second pressure gauge, and the first high-pressure control valve OCV can be controlled.

[0361] On the other hand, for the internal evacuation unit 740 and the external evacuation unit 760 of the present invention described later, pressure gauges can also be separately provided in the internal vacuum evacuation line 742 and the external vacuum evacuation line 762, etc., and the internal evacuation unit 740 and the external evacuation unit 760 can be controlled based on the pressure measurement values of the pressure gauges.

[0362] As another example, in the internal evacuation section 740 and the external evacuation section 760, instead of having separate pressure gauges, the pressure in the reaction space 32 is measured by the second pressure gauge disposed in the second high-pressure control section 720. Furthermore, based on the measured value, the first high-pressure control section 700, the internal evacuation section 740, and the external evacuation section 760 can be controlled.

[0363] After the gas utility section configured as described above obtains the second internal pressure PI in the reaction space 32 of the pressurized inner tube 30, a process with a low pressure lower than atmospheric pressure can be repeatedly performed.

[0364] At this time, when the second internal pressure PI in the reaction space 32 of the inner tube 30 is lower than atmospheric pressure or remains in the depressurized state, the gas utility section can also adjust the first internal pressure PO in the protection space 22 of the outer tube 20 to maintain atmospheric pressure.

[0365] On the other hand, another embodiment of the gas utility section of the present invention will be described with reference to the drawings, and the detailed description of the same structure as the above-described first embodiment will be omitted.

[0366] As a second embodiment, as Figure 9 shown, the gas utility section may further include an external evacuation section 760. The external evacuation section 760 branches from the front end of the first high-pressure control section 700 in the external exhaust line 702 to connect to a vacuum pump 750, and evacuates the protection space 22 to maintain a pressure lower than atmospheric pressure and higher than the pressure in the reaction space 32.

[0367] The external evacuation section 760 can be connected to the vacuum pump 750 by branching from the front end on the side of the outer tube 20 of the first high-pressure control section 700 in the external exhaust line 702 of the external exhaust section 791.

[0368] Thus, the external evacuation section 760, as a structure for evacuating and exhausting the protection space 22 to maintain a pressure lower than atmospheric pressure and higher than the pressure in the reaction space 32, can have various structures.

[0369] For example, the external evacuation section 760 may include an external vacuum evacuation line 762 and a first low-pressure regulating valve V9. The external vacuum evacuation line 762 connects the external exhaust section 791 and the vacuum pump 750, and the first low-pressure regulating valve V9 is disposed on the external vacuum evacuation line 762 to regulate the flow toward the vacuum pump 750.

[0370] In addition, the external evacuation section 760 may include a first main evacuation valve V11. The first main evacuation valve V11 is disposed between the first low-pressure regulating valve V9 and the vacuum pump 750 to control the pressure in the protection space 22 to be maintained lower than atmospheric pressure and higher than the pressure in the reaction space 32.

[0371] In addition, the external air extraction part 760 may include a first valve V12, and the first valve V12 guides the inert gas discharged from the protection space 22 to be performed by one of the external exhaust part 791 and the external air extraction part 760.

[0372] At this time, the vacuum pump 750 may be a vacuum pump structured to connect to the internal air extraction part 740. As another example, there may be a separate vacuum pump for connecting to the external air extraction part 760, and it may be connected to different vacuum pumps from the internal air extraction part 740.

[0373] The first low-pressure regulating valve V9 is provided on the external vacuum air extraction line 762, and the first low-pressure regulating valve V9 may be opened to form a low pressure in the protection space 22 of the outer tube 20.

[0374] In addition, the first main air extraction valve V11 is provided on the first main air extraction line 764 connected to the external vacuum air extraction line 762, and the air extraction volume passing through the external vacuum air extraction line 762 can be controlled.

[0375] In addition, the first slow air extraction valve V10 is provided on the first slow air extraction line 766 parallel to the first main air extraction valve V11, and the air extraction volume passing through the first slow air extraction line 766 can be controlled.

[0376] With the above structure of the external air extraction part 760, the pressure in the protection space 22 of the outer tube 20 can be reduced by the air extraction of the first slow air extraction valve V10, and then can be further reduced by the air extraction of the first main air extraction valve V11.

[0377] At this time, the first low-pressure regulating valve V9 remains open during the air extraction performed by the first slow air extraction valve V10 and the first main air extraction valve V11.

[0378] As an example, the first slow air extraction valve V10 can control the air extraction volume until the pressure in the protection space 22 of the outer tube 20 reaches, for example, 10 Torr, and the first main air extraction valve V11 can control the air extraction volume until the protection space 22 of the outer tube 20 reaches a low pressure lower than 10 Torr.

[0379] Then, the air extraction acting on the external vacuum air extraction line 762, the first main air extraction line 764, and the first slow air extraction line 766 depends on the pumping force of the above-mentioned vacuum pump 750.

[0380] In addition, in this case, a first valve V12 may also be included. The first valve V12 is arranged between the first high-pressure control part 700 and the external vacuum air extraction line 762 in the external exhaust line 702, and guides one of the external exhaust part 791 and the external air extraction part 760 to perform the discharge of inert gas from the protection space 22.

[0381] Accordingly, in the state where the first valve V12 is closed, the inert gas in the protection space 22 can be discharged through the external air extraction part 760; in the state where the first valve V12 is open, the inert gas in the protection space 22 can be discharged through the external exhaust part 791 while closing the first low-pressure regulating valve V9.

[0382] On the other hand, in the gas common part of the second embodiment, when the second internal pressure PI, which forms the pressure of the reaction space 32, is formed at a low pressure lower than the atmospheric pressure, the first internal pressure PO, which is the pressure of the protection space 22, is the same as when the second internal pressure PI is at a high pressure, and a predetermined pressure difference ΔP can be maintained.

[0383] In particular, in order to maintain the predetermined pressure difference ΔP, when the first internal pressure PO needs to be greater than the second internal pressure PI and less than the atmospheric pressure, the first internal pressure PO can be formed at a low pressure through the structure of the external air extraction part 760 described above, and thus the predetermined pressure difference ΔP can be maintained.

[0384] As a third embodiment of the gas common part of the present invention, as Figure 10 shown, it can be configured such that one end of the external air extraction part 760 is connected to a separate external air extraction port arranged in the external manifold 50, and the other end can be connected to the external exhaust device 793.

[0385] That is, the external manifold 50 includes an external air extraction port for maintaining the internal pressure of the protection space 22 at a state lower than the atmospheric pressure and higher than the pressure of the reaction space 32.

[0386] At this time, the gas common part is connected to the external air extraction port and the vacuum pump 750, and the protection space 22 can be evacuated to maintain a pressure lower than the atmospheric pressure and higher than the pressure of the reaction space 32.

[0387] At this time, the external vacuum extraction line 762 can be connected to the external air extraction port and the vacuum pump 750.

[0388] As a fourth embodiment of the gas common part of the present invention, as Figure 11 shown, the gas common part can include an internal air extraction part 740, and the internal air extraction part 740 branches from the front end of the second high-pressure valve part 720 in the internal exhaust line 722 of the internal exhaust part 792 and is connected to the vacuum pump 750 connected to the external exhaust device 793 to evacuate the reaction space 32 at a pressure lower than the atmospheric pressure.

[0389] That is, the internal air extraction part 740 branches from the front end of the second high-pressure valve part 720 in the internal exhaust line 722 of the internal exhaust part 792 and is connected to the external exhaust device 793, and thus performs low-pressure exhaust at a pressure lower than the atmospheric pressure for the reaction space 32.

[0390] In this case, the internal air extraction part 740 can branch and arrange an internal vacuum extraction line 742 from the internal exhaust line 722 of the internal exhaust part 792, and can be arranged such that the other ends of the above-mentioned second main extraction line 744 and second slow extraction line 746 are connected to an external exhaust device 793, that is, a vacuum pump 750.

[0391] At this time, the structure of the above-mentioned external air extraction part 760 can be omitted, and the pressure in the protection space 22 can be maintained at normal pressure, or higher than normal pressure to have a deviation from the pressure in the reaction space 32.

[0392] In addition, in this case, a second valve V8 can also be included. The second valve V8 is arranged between the second high-pressure control part 720 and the internal vacuum extraction line 742 in the internal exhaust line 722 to guide the selective discharge of the process gas in the reaction space 32 by one of the internal exhaust part 792 and the internal air extraction part 740.

[0393] That is, in the state where the second valve V8 is closed, the process gas in the reaction space 32 can be discharged through the internal air extraction part 740.

[0394] At this time, in the state where the second valve V8 is open, while closing the second low-pressure regulating valve V5, the internal exhaust part 792 discharges the process gas in the reaction space 32.

[0395] In addition, as a fifth embodiment, as Figure 12 shown, the same as the fourth embodiment, with the internal air extraction part 740 arranged, the external air extraction part 760 can be connected to the external exhaust device 793 by branching from the front end of the first high-pressure control part 700 in the external exhaust line 702 of the external exhaust part 791.

[0396] Thus, air extraction can be performed on the protection space 22 to maintain a low-pressure state lower than normal pressure.

[0397] In this case, the external air extraction part 760 can be arranged such that an external vacuum extraction line 762 branches and is arranged from the front end of the first high-pressure control part 700 in the external exhaust line 702 of the external exhaust part 791, and the other ends of the above-mentioned first main extraction line 764 and first slow extraction line 766 are connected to the external exhaust device 793, that is, the vacuum pump 750.

[0398] As another example, as Figure 13 shown, as a sixth embodiment, the external air extraction part 760 can be arranged such that one end is connected to a separate external air extraction port arranged on the external manifold 50, and the other end can be connected to the external exhaust device 793

[0399] That is, the external manifold 50 includes an external air extraction port for maintaining the internal pressure of the protection space 22 at a state lower than the atmospheric pressure and higher than the pressure of the reaction space 32; the gas common part connects the external air extraction port and the vacuum pump 750, and can perform air extraction to keep the protection space 22 at a pressure lower than the atmospheric pressure and higher than the pressure of the reaction space 32.

[0400] At this time, the external vacuum extraction line 762 can connect the external air extraction port and the vacuum pump 750.

[0401] On the other hand, referring to Figure 14 and Figure 15 , the pressure control methods for the reaction space 32 and the protection space 22 will be described in stages.

[0402] For reference, in the full text of the specification of the present invention, the term "pressure increase" means a situation where the pressure is increased more than in the previous step, and the term "pressure reduction" is used with the opposite meaning.

[0403] In addition, the meanings of the terms "high pressure" and "low pressure", without separate explanation, respectively represent a pressure higher than the atmospheric pressure and a pressure lower than the atmospheric pressure.

[0404] Hereinafter, for the Figure 14 pressure control method, the first embodiment of the Figure 5 as a representative gas common part will be described, but of course, it can also be applied to the gas common parts of the second to sixth embodiments of the Figures 9 to 13 .

[0405] The periods T1 and T2 for pre-treatment are for preparing for leak check and pressure increase processes.

[0406] During the periods T1 and T2, the second supply unit 620 does not supply process gas to the reaction space 32 of the inner tube 30, and the second high-pressure control unit 720 does not exhaust gas.

[0407] At this time, in order to keep the atmospheric pressure in the protection space 22 of the outer tube 20, the first supply unit 600 is controlled to supply inert gas and the first high-pressure control unit 700 is controlled to exhaust gas.

[0408] Then, during the period T1, the internal air extraction unit 740 closes the second main extraction valve V7 and opens the second slow extraction valve V6 after opening the second low-pressure regulating valve V5.

[0409] That is, slow air extraction is performed on the reaction space 32 of the inner tube 30.

[0410] During the period T2, the internal air extraction unit 740 keeps the second pressure regulating valve V5 open, opens the main extraction valve V7, and closes the slow extraction valve V6.

[0411] That is, main evacuation is performed for the reaction space 32 of the inner tube 30.

[0412] The second internal pressure PI of the reaction space 32 of the inner tube 30 is reduced to below atmospheric pressure by slow evacuation during the period T1, and this reduced pressure state is maintained by main evacuation during the period T2.

[0413] In the state where the reaction space 32 of the inner tube 30 is sealed by the cover flange 70, if the reaction space 32 of the inner tube 30 has a low pressure during the periods T1 and T2, it is possible to check whether a leak occurs in the reaction space 32 of the inner tube 30.

[0414] Then, the jig module 300 can perform clamping between the cover flange 70 and the second lower flange 63 of the internal manifold 60 by the low pressure in the reaction space 32 during the period T2.

[0415] After performing the pretreatment as described above, the gas utility unit can perform the process as in Figure 14 the periods T3 to T7.

[0416] Figure 14 It is exemplified that two processes are repeated, and the processes in the periods T3 to T7 are the same as those in the periods T9 to T13, so repeated explanations are omitted.

[0417] When it is necessary to maintain a low pressure even during the continuous repetition of the process twice, it is sufficient to perform as shown in the period T8.

[0418] During the periods T3 to T6, the internal evacuation unit 740 stops evacuating the reaction space 32 of the inner tube 30.

[0419] During the period T3, in order to maintain the atmospheric pressure in the protection space 22 of the outer tube 20, the first gas supply unit 600 is controlled to supply an inert gas and the first high-pressure control unit 700 exhausts gas.

[0420] Then, in order to raise the second internal pressure PI of the reaction space 32 of the inner tube 30 to atmospheric pressure, the second gas supply unit 620 supplies a process gas, and the second high-pressure control unit 720 does not perform exhaust.

[0421] At this time, hydrogen can be used as the process gas supplied to the inner tube 30.

[0422] During the period T4, the protection space 22 of the outer tube 20 and the reaction space 32 of the inner tube 30 respectively have a first internal pressure PO and a second internal pressure PI that are higher than atmospheric pressure, and the first internal pressure PO maintains a high pressure with a predetermined difference compared to the second internal pressure PI.

[0423] During period T4, in order for the protective space 22 of the outer tube 20 to have a high pressure above atmospheric pressure, the first gas supply unit 600 is controlled to supply an inert gas and the exhaust of the first high-pressure control unit 700.

[0424] At this time, in order to pressurize the protective space 22 of the outer tube 20, the first gas supply unit 600 supplies an inert gas in an amount above the exhaust gas volume.

[0425] Then, in order for the reaction space 32 of the inner tube 30 to have a high pressure above atmospheric pressure, the second gas supply unit 620 is controlled to supply a process gas and the exhaust of the second high-pressure control unit 720.

[0426] At this time, in order to pressurize the reaction space 32 of the inner tube 30, the second gas supply unit 620 supplies a process gas in an amount above the exhaust gas volume.

[0427] As an example, the process gas supplied to the inner tube 30 can utilize hydrogen.

[0428] After that, the protective space 22 of the outer tube 20 and the reaction space 32 of the inner tube 30 are at a high pressure where the first internal pressure PO maintains a predetermined difference compared to the second internal pressure PI.

[0429] In order to maintain this high pressure difference, the first gas supply unit 600 is maintained to supply an inert gas and the exhaust of the first high-pressure control unit 700, and the second gas supply unit 620 is maintained to supply a process gas and the exhaust of the second high-pressure control unit 720.

[0430] At this time, in order to maintain the high pressure, the supply of the inert gas and the exhaust to the protective space 22 and the supply of the process gas and the exhaust to the reaction space 32 are respectively adjusted.

[0431] After that, during period T5, the first high-pressure control unit 700 exhausts the protective space 22 of the outer tube 20 and the second high-pressure control unit 720 exhausts the reaction space 32 of the inner tube 30 until the outer tube 20 and the inner tube 30 respectively reach atmospheric pressure.

[0432] At this time, the supply of the inert gas by the first gas supply unit 600 and the supply of the process gas by the second gas supply unit 620 can be maintained in a small amount or blocked for purging.

[0433] After that, during period T6, in order to maintain atmospheric pressure for the protective space 22 of the outer tube 20, the first gas supply unit 600 is controlled to supply an inert gas and the exhaust of the first high-pressure control unit 700.

[0434] Then, in order to maintain atmospheric pressure for the reaction space 32 of the inner tube 30, the second gas supply unit 620 is also controlled to supply a process gas and the exhaust of the second high-pressure control unit 720.

[0435] At this time, the process gas supplied to the inner tube 30 can utilize nitrogen to dilute hydrogen.

[0436] After that, period T7 is the same as period T1. The protection space 22 for the outer tube 20 remains in common use, and slow evacuation is performed on the reaction space 32 for the inner tube 30, and a low pressure is maintained during period T8.

[0437] Since the operations in period T7 and period T1 are the same, repeated descriptions are omitted.

[0438] An embodiment of the present invention is that during period T3 to period T7 or period T9 to period T13 of Figure 14 a variable pressure process including pressure increase and pressure reduction can be performed.

[0439] Therefore, an embodiment of the present invention is that even before forming a thin film, during the formation of the thin film, or after forming the thin film, the reaction space has a high pressure, and then it has a low pressure again, thereby improving the characteristics of the thin film.

[0440] That is, in this embodiment, when a low pressure process is performed in the reaction space 32 by driving the internal evacuation unit 740 in the external exhaust unit 791, the protection space can be evacuated so that the pressure in the protection space 22 remains at normal pressure or higher than normal pressure.

[0441] At this time, the first high-pressure control valve OVC can adjust the exhaust volume of the external exhaust line 702 to maintain a higher pressure with a uniform difference compared to the pressure in the internal exhaust line 722 based on the pressure in the internal exhaust line 722.

[0442] Then, an embodiment of the present invention is to perform post-treatment after completing the above process. For example, during period T14, the second internal pressure PI in the reaction space 32 of the inner tube 30 can be made to have a low pressure lower than normal pressure, and post-treatment can be performed in the low-pressure state.

[0443] During the above post-treatment period, an embodiment of the present invention can perform leak check and release the clamping between the cover flange 70 and the internal manifold 60.

[0444] In order to improve the characteristics of the thin film through the above-described embodiments, the present invention can implement a substrate processing apparatus capable of performing a variable pressure process of increasing pressure and then reducing pressure.

[0445] In addition, through the embodiments, the present invention can expect various effects, such as preventing damage to the inner tube 30 that may occur in the above variable pressure process, preventing leakage, ensuring the reliability of the substrate processing apparatus, improving process efficiency and process throughput, etc.

[0446] In addition, as another embodiment of the pressure control method of the present invention, as Figure 15As shown, when a low-pressure process is performed in the reaction space 32, evacuation can be performed to keep the first internal pressure PO of the protection space 22 higher than the second internal pressure PI and lower than the atmospheric pressure.

[0447] The pressure control method as described above includes the case where the first internal pressure PO of the protection space 22 is in a low-pressure state lower than the atmospheric pressure. Therefore, through the above-mentioned Figure 9 , Figure 10 and Figure 12 , Figure 13 The gas common parts of the second, third, fifth, and sixth embodiments can be realized.

[0448] On the other hand, during this process, the second internal pressure PI can maintain a predetermined pressure difference ΔP compared to the first internal pressure PO.

[0449] For the case where the reaction space 32 is at high pressure, etc., it is the same as the above-mentioned embodiments. Therefore, only the differences will be described below, and the omitted descriptions can be applied equally Figure 14 to the pressure control method.

[0450] In addition, when a low-pressure process is performed in the reaction space 32 by driving the internal evacuation unit 740, the external evacuation unit 760 can evacuate the protection space 22 so that the pressure of the protection space 22 is lower than the atmospheric pressure and higher than the pressure of the reaction space 32.

[0451] At this time, the first main evacuation valve V11 can adjust the evacuation volume of the external vacuum evacuation line 762, and further maintain a higher pressure with a uniform difference compared to the pressure of the internal vacuum evacuation line 742 based on the pressure of the internal vacuum evacuation line 742.

[0452] That is, as Figure 15 shown, when adjusting the pressure of the reaction space 32 to high pressure or low pressure through the internal exhaust unit 792 and the internal evacuation unit 740 in each of the above embodiments of the present invention, the external exhaust unit 791 and the external evacuation unit 760 can respectively keep the pressure of the protection space 22 constantly at ΔP while maintaining a pressure higher than that of the reaction space 32 through the previous process.

[0453] The above is only an illustration of a part of the preferred embodiments that can be realized by the present invention. Therefore, it is well known that the scope of the present invention should not be limited to the above embodiments. The scope of the present invention includes all of the technical ideas described above and its fundamental technical ideas.

Claims

1. A substrate processing apparatus, characterized in that, comprising: An outer tube having a protection space formed therein and a first inlet formed at the lower part; An inner tube having a reaction space formed therein and a second inlet formed at the lower part, and a part of which is accommodated in the outer tube, and the part forming the second inlet protrudes downward from the outer tube; A manifold assembly that supports the upper outer tube and the lower inner tube at intervals; A cover flange that seals the lower part of the manifold assembly; Wherein, the manifold assembly includes: An outer manifold that supports the lower end of the outer tube and forms a first internal space connected to the protection space; An inner manifold whose upper end is fastened and joined to the lower end of the outer manifold through a coupling member to support the lower end of the inner tube, and forms a second internal space connected to the reaction space; A plurality of clamping modules formed at scattered positions on the side surface of the cover flange; An internal evacuation part that evacuates the reaction space through the manifold assembly; When the cover flange is lifted, an O-ring is interposed between the upper surface of the cover flange and the bottom surface of the manifold assembly and approaches at a first distance; If the reaction space is depressurized to below atmospheric pressure by evacuation through the internal evacuation part, an O-ring is interposed between the upper surface of the cover flange and the bottom surface of the manifold assembly and they are adjacent at a second distance smaller than the first distance, so that the plurality of clamping modules clamp the cover flange and the lower part of the manifold assembly that are adjacent at the second distance through the O-ring.

2. The substrate processing apparatus according to claim 1, characterized in that, further having a bottom plate that is fixed while maintaining a space below the cover flange; The plurality of clamping modules are dispersedly arranged on the bottom plate and each has a clamp, and the clamp forms a clamping channel facing the side surface of the cover flange. By driving the clamp, the cover flange and the lower part of the manifold assembly that are adjacent at the second distance are clamped in the clamping channel.

3. The substrate processing apparatus according to claim 2, characterized in that, each of the clamping modules includes: The clamp that forms a clamping channel facing the side surface of the cover flange; A clamp bracket that vertically supports the clamp; An actuator fixed to the bottom plate and connected to the clamp bracket through a rod to move the clamp bracket and the clamp forward or backward; Wherein, by driving of the actuator, the clamp moves between a locking position for clamping and an unlocking position for releasing the clamping.

4. The substrate processing apparatus according to claim 2, characterized in that, a lifting plate is further provided below the bottom plate, and the lifting plate is spaced from the bottom plate by the elastic force of an elastic part; The elastic part is interposed between the bottom plate and the lifting plate and provides the elastic force for the upper surface of the cover flange and the bottom surface of the manifold assembly to approach at the first distance.

5. The substrate processing apparatus according to claim 4, characterized in that, the elastic part includes springs interposed at multiple positions between the lifting plate and the bottom plate.

6. The substrate processing apparatus according to claim 1, characterized in that, the inner manifold is configured to, forms the lower part of the manifold assembly and has a second lower flange facing the upper surface of the edge of the cover flange, causes the plurality of clamping modules to clamp the cover flange and the second lower flange adjacent to each other at the second spacing through an O-ring.

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