Radio frequency front-end module

Abstract

The invention discloses a radio frequency front-end module. The radio frequency front-end module comprises a substrate and a first chip arranged on the substrate, wherein the first chip comprises a coupler; the coupler comprises a compensation part, a first metal area is arranged on the substrate, and the first metal area and the compensation part are at least partially overlapped in the longitudinal direction to form a first compensation capacitor. A first metal area on a substrate and a compensation part included by a coupler arranged on a first chip form a first compensation capacitor, so that the isolation and directivity of the coupler can be improved under the condition of not additionally occupying an area, and the requirement that the coupler is in a wide frequency band (especially in two frequency points with large spans, such as [1.4 GHZ, 1.4 GHZ, 1.4 GHZ, 1.4 GHZ, 1.4 GHZ, 1.4 GHZ, 1.4 GHZ, 1.4 GHZ, 1.4 GHZ, 1.4 GHZ, 1.4 GHZ, 1.4 GHZ, 1.4 GHZ) and the like, is met. And the requirements on directivity and isolation in the frequency band range of 2.69 GHZ are met.

Description

Technical Field

[0001] This application relates to the field of radio frequency technology, and more particularly, to a radio frequency front-end module. Background Art

[0002] A radio frequency front-end module is a component that integrates two or more discrete devices such as radio frequency switches, low-noise amplifiers, filters, couplers, power amplifiers, etc. into an independent module, thereby improving the integration and hardware performance and miniaturizing the volume. The coupler is an important part of the radio frequency front-end module. It is a device used to transfer high-frequency signals from one circuit to another. Its main function is to transfer the radio frequency signal in one circuit to another circuit while maintaining the stability and accuracy of the signal. Traditional couplers have a large occupied area due to complex circuit designs and cannot be applied to miniaturized and broadband circuit designs. Summary of the Invention

[0004] Embodiments of this application provide a radio frequency front-end module to solve the problem that the coupler in the radio frequency front-end module cannot achieve broadband design within a limited area.

[0005] A radio frequency front-end module includes a substrate and a first chip disposed on the substrate. The first chip includes a coupler; the coupler includes a compensation portion, and a first metal region is disposed on the substrate. The first metal region at least partially overlaps the compensation portion in the longitudinal direction to form a first compensation capacitor.

[0006] Further, the compensation portion is disposed adjacent to the substrate.

[0007] Further, the coupler includes a main line and a coupling line. The coupling line includes a first coupling line portion disposed on a first metal layer of the first chip. The compensation portion includes at least a part of the first coupling line portion. At least a part of the first coupling line portion at least partially overlaps the first metal region in the longitudinal direction to form at least a part of the first compensation capacitor.

[0008] Further, the coupling line further includes a second coupling line portion disposed on a second metal layer of the first chip. The compensation portion further includes at least a part of the second coupling line portion. At least a part of the second coupling line portion at least partially overlaps the first metal region in the longitudinal direction to form a part of the first compensation capacitor.

[0009] Further, the first metal layer and the second metal layer are arranged adjacent to each other. The main line and a part of the first coupling line are arranged opposite to each other on the first metal layer. A projection of the second coupling line part and the main line in the longitudinal direction overlap at least partially to form a second compensation capacitor. The second coupling line part and the first coupling line part are connected through vias. Wherein, the first metal layer is a metal layer in the first chip that is far from the substrate of the first chip.

[0010] Further, the first chip includes a first metal layer and a second metal layer arranged adjacent to each other; wherein, the first metal layer is a metal layer in the first chip that is far from the substrate of the first chip;

[0011] The compensation part includes a first metal block arranged on the first metal layer. The first metal block overlaps with the first metal region at least partially in the longitudinal direction to form at least part of the first compensation capacitor; and / or, the compensation part includes a second metal block arranged on the second metal layer. The second metal block overlaps with the first metal region at least partially in the longitudinal direction to form at least part of the first compensation capacitor.

[0012] Further, the compensation part includes at least part of the active devices in the coupler. The at least part of the active devices overlaps with the first metal region at least partially in the longitudinal direction to form the first compensation capacitor.

[0013] Further, the compensation part includes at least part of the passive devices in the coupler. The at least part of the passive devices overlaps with the first metal region at least partially in the longitudinal direction to form the first compensation capacitor.

[0014] Further, the first chip is arranged on the substrate in an inverted manner. The first chip is arranged on the substrate in an inverted manner. The first chip includes a first metal layer and a second metal layer arranged adjacent to each other. Wherein, the first metal layer is a metal layer in the first chip that is far from the substrate of the first chip. The second metal layer, the first metal layer and the substrate are arranged in sequence from top to bottom.

[0015] Further, a projection of the first metal region and the main line in the longitudinal direction does not overlap.

[0016] Further, the first coupling line part is wound to form a first compensation region. An active device and / or a passive device is arranged in the first compensation region. A projection of the first compensation region and the first metal region in the longitudinal direction overlaps at least partially.

[0017] Further, the coupler further includes a matching circuit connected to the first coupling line portion. The matching circuit is located in the first compensation region. The matching circuit includes active devices and / or passive devices, and the active devices and / or passive devices include at least part of the compensation portion.

[0018] Further, the first metal region is a ground plane laid on the top layer of the substrate.

[0019] In this embodiment, the radio frequency front-end module includes a substrate and a first chip disposed on the substrate. The first chip includes a coupler. The coupler includes a compensation portion. A first metal region is disposed on the substrate. The first metal region at least partially overlaps with the compensation portion in the longitudinal direction to form a first compensation capacitor. By using the first metal region on the substrate and the compensation portion included in the coupler disposed on the first chip to form the first compensation capacitor, the isolation and directivity of the coupler can be improved without additional area occupation, meeting the requirements for directivity and isolation of the coupler in a wide frequency band (especially in two frequency points with a large span, such as the frequency band range of [1.4 GHz, 2.69 GHz]). Description of the Drawings

[0020] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the following will briefly introduce the drawings required for the description of the embodiments. Obviously, the drawings in the following description are only some embodiments of the present application. For those skilled in the art, other drawings can be obtained based on these drawings without creative efforts.

[0021] Figure 1 is a schematic structural diagram of the radio frequency front-end module in the present application.

[0022] Figure 2 is another schematic structural diagram of the radio frequency front-end module in the present application.

[0023] Figure 3 is another schematic structural diagram of the radio frequency front-end module in the present application Detailed Embodiments

[0024] In order to enable those skilled in the art to better understand the solutions of the present application, the following will clearly and completely describe the technical solutions in the embodiments of the present application with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative efforts fall within the scope of protection of the present application.

[0025] Please refer to Figures 1 to 3As shown in the figure, the first embodiment of the present application provides a radio frequency front-end module. A radio frequency front-end module is a component that integrates two or more discrete devices such as radio frequency switches, low-noise amplifiers, filters, duplexers, power amplifiers, etc. into an independent module, thereby improving the integration and hardware performance and miniaturizing the volume. Specifically, the radio frequency front-end module can be applied to communication devices such as smart phones, tablet computers, and smart watches.

[0026] The present application provides a radio frequency front-end module, including a substrate 10 and a first chip 20 disposed on the substrate 10. The first chip 20 includes a coupler 30. The coupler 30 includes a compensation portion 301. A first metal region 101 is disposed on the substrate 10. The first metal region 101 and the compensation portion 301 overlap at least partially in the longitudinal direction to form a first compensation capacitor.

[0027] In at least one embodiment, the first chip can be manufactured based on GaAs (gallium arsenide) process, or based on CMOS (Complementary Metal Oxide Semiconductor) process, etc., and can also be manufactured based on IPD (Integrated Passive Devices) process. The present embodiment does not specifically limit the manufacturing method of the first chip 20. Among them, the first chip 20 can be disposed on the substrate in a flip-chip or other manner.

[0028] In a specific embodiment, the first chip 20 includes a coupler 30. The coupler 3 includes a compensation portion 301. A first metal region 101 is disposed on the substrate 10. The first metal region 301 and the compensation portion 101 overlap at least partially in the longitudinal direction to form a first compensation capacitor. It should be noted that the first metal region can be a metal region on any layer of the substrate, or a ground (GND) laid on any layer of the substrate, or other regions with metal characteristics on the substrate. The first metal region can be a complete large area spread out, or composed of many independent small metal regions. There may be hollow regions without metal between the multiple independent small metal regions.

[0029] As an example, the first metal region on the substrate is the ground (GND) laid on the top layer of the first layer of the substrate. It can be understood that the ground (GND) on the top layer of the substrate can be a complete ground (GND) covered on the top layer of the substrate, or a part of the ground (GND) on the top layer of the substrate.

[0030] In at least one embodiment, refer to the followingFigure 2 As shown, the coupler is a four-port device, including a main line 11 and a coupled line that are coupled to each other. One end of the main line 11 is the signal input end, the other end of the main line is the signal output end, one end of the coupled line is the coupling end, and the other end is the isolation end. When a signal is input from the signal input port, most of the signal is directly output from the signal output end, and a small part of the signal is coupled out from the coupling end. The isolation end is usually connected to a matching load. The characteristics of the coupler can be characterized by four indicators: coupling degree, insertion loss, isolation degree, and directivity. Among them, the coupling degree represents the ratio of the power input from the signal input end and the part coupled to the coupling end. The insertion loss represents the energy loss from the signal input end to the signal output end. In an ideal directional coupler, there is no power output from the isolation end, but in fact, there is always some power leaking from this port, which is the isolation degree indicator. The ratio between the output power of the coupling end and the output power of the isolation end is defined as the directivity. The relationship between the coupling degree, isolation degree, and directivity is: directivity (D) = isolation degree (ISO) - coupling degree (C).

[0031] In at least one embodiment, the compensation part can be a gold layer line or a metal block additionally provided on the first chip 20, or the metal wiring of the coupler (for example: the coupled line of the coupler or other connection lines), or the active device (for example: transistor) or passive device (for example: capacitor, resistor or inductor) included in the coupler, etc. It should be noted that the specific form of the compensation part is not limited in this embodiment, and the compensation part can be on any layer provided on the first chip.

[0032] It can be understood that the impedance of a capacitor in an AC circuit is the capacitive reactance Xc, and the calculation formula is Xc = 1 / (ωC) = 1 / (2πfC), where f is the frequency, the unit is Hz, ω = 2πf is the angular frequency, and the unit is 1 / s. In the RF circuit where the coupler is located, the higher the frequency, the smaller the capacitance value usually required, and the lower the frequency, the larger the capacitance value usually required. The capacitive reactance value Xc is an important value to ensure the isolation degree and directivity of the coupler. In a fixed requirement situation, for example: assuming that the directivity of the coupler is not less than a preset value (such as 18 dB), the value of Xc is determined. At this time, the higher the frequency, the larger the ω value, and the smaller the capacitance value C. Only in this way can the product ωc of these two values ensure to be within a certain fixed value range to ensure that the capacitive reactance value Xc meets the actual requirements.

[0033] Therefore, in this embodiment, by making the first metal region and the compensation portion at least partially overlap in the longitudinal direction, a first compensation capacitor is formed. Specifically, by adjusting the distance or the overlapping area between the first metal region and the compensation portion, the capacitance value of the formed first compensation capacitor can be changed, thereby improving the isolation (ISO) of the coupler. Based on the "coupler directivity calculation formula: D(dB) = I(dB) - C(dB), where D is the directivity of the coupler, I is the isolation of the coupler, and C is the coupling of the coupler", it can be known that when the coupling of the coupler remains unchanged, when the isolation (ISO) increases, the corresponding directivity D will also increase accordingly, thus meeting the requirements for directivity and isolation of the coupler in a wide frequency band (especially at two frequency points with a large span, for example:

[0034] [1.4 GHz, 2.69 GHz] frequency band range for the requirements of directivity and isolation.

[0035] In this embodiment, the RF front-end module includes a substrate and a first chip disposed on the substrate. The first chip includes a coupler. The coupler includes a compensation portion. A first metal region is disposed on the substrate. The first metal region and the compensation portion at least partially overlap in the longitudinal direction to form a first compensation capacitor. By using the first metal region on the substrate and the compensation portion included in the coupler disposed on the first chip to form a first compensation capacitor, the isolation and directivity of the coupler can be improved without additional area occupation, meeting the requirements for directivity and isolation of the coupler in a wide frequency band (especially at two frequency points with a large span, for example: [1.4 GHz, 2.69 GHz] frequency band range.

[0036] In a specific embodiment, the compensation portion is disposed adjacent to the substrate.

[0037] In at least one embodiment, the compensation portion is disposed adjacent to the substrate, that is, the position of the compensation portion on the first chip is close to the substrate. For example: the compensation portion can be disposed on the metal layer of the first chip closest to the top layer of the substrate; the compensation portion can also be disposed on other metal layers of the first chip, but it is necessary to ensure that the compensation portion and the first metal region on the substrate can at least partially overlap in the longitudinal direction.

[0038] In a specific embodiment, the coupler includes a main line and a coupling line. The coupling line includes a first coupling line portion disposed on the first metal layer of the first chip. The compensation portion includes at least part of the first coupling line portion. At least part of the first coupling line portion and the first metal region at least partially overlap in the longitudinal direction to form at least part of the first compensation capacitor.

[0039] In at least one embodiment, the main line is a metal wire in the coupler for transmitting radio frequency signals. The radio frequency signal is input from the signal input port of the main line and directly output from the signal output end of the main line. The radio frequency signal transmitted in the main line is usually a high-power signal. Therefore, the line width of the main line is usually relatively wide. The coupling line includes a coupling end and an isolation end. The signal coupled from the main line by the coupling line is transmitted to the subsequent circuit through the coupling end for power detection or monitoring. Since the power of the signal coupled from the main line by the coupling line is usually small, the line width of the coupling line is usually relatively narrow. And the coupling end of the coupling line needs to be externally connected to the subsequent circuit, and the isolation end of the coupling line needs to be externally connected to the matching circuit. Among them, the first coupling line portion is at least a part of the coupling line. That is, the first coupling line portion can be a part of the coupling line or the entire coupling line.

[0040] In a specific embodiment, the compensation portion includes the first coupling line portion. The first coupling line portion at least partially overlaps with the first metal region in the longitudinal direction to form at least part of the first compensation capacitor. It can be understood that the at least partial overlap of the first coupling line portion and the first metal region in the longitudinal direction to form a compensation capacitor is all or part of the first compensation capacitor.

[0041] As an example, the first metal layer is the metal layer adjacent to the top layer of the substrate in the first chip. In at least one embodiment, the first coupling line portion is disposed on the first metal layer and at least partially overlaps with the first metal region on the top layer of the substrate in the longitudinal direction to form at least part of the first compensation capacitor; by adjusting the distance or the overlapping area between the first coupling line portion and the first metal region, the capacitance value of the formed first compensation capacitor can be changed, thereby improving the isolation and directivity of the coupler.

[0042] In a specific embodiment, the coupling line further includes a second coupling line portion disposed on the second metal layer of the first chip. The compensation portion further includes at least part of the second coupling line portion. At least part of the second coupling line portion at least partially overlaps with the first metal region in the longitudinal direction to form part of the first compensation capacitor.

[0043] In a specific embodiment, the coupling line further includes a second coupling line portion 22 disposed on the second metal layer of the first chip. The compensation portion further includes at least part of the second coupling line portion 22. The second coupling line portion at least partially overlaps with the first metal region in the longitudinal direction to form part of the first compensation capacitor. It can be understood that the at least partial overlap of the second coupling line portion and the first metal region in the longitudinal direction to form a compensation capacitor is part of the first compensation capacitor.

[0044] In at least one embodiment, the second metal layer is disposed adjacent to the first metal layer. The compensation portion further includes a second coupling line portion disposed on the second metal layer. The second coupling line portion at least partially overlaps the first metal region in the longitudinal direction to form at least a part of the first compensation capacitor; the capacitance value of the formed first compensation capacitor can be changed by adjusting the distance or overlapping area between the second coupling line portion and the first metal region, thereby improving the isolation and directivity of the coupler.

[0045] It should be noted that if the first metal layer is a metal layer adjacent to the top layer of the substrate, and the second metal layer is disposed adjacent above the first metal layer, at this time, the region where the second coupling line portion projects onto the first metal layer is a hollowed-out region, so as to ensure that the second coupling line portion at least partially overlaps the first metal region in the longitudinal direction to form a part of the first compensation capacitor.

[0046] In a specific embodiment, the first metal layer and the second metal layer are disposed adjacent to each other, the main line and the first coupling line portion are oppositely disposed on the first metal layer, the second coupling line portion at least partially overlaps the projection of the main line in the longitudinal direction to form a second compensation capacitor, and the second coupling line portion and the first coupling line portion are connected by a via hole. Wherein, the first metal layer is the metal layer in the first chip that is far from the substrate of the first chip.

[0047] The coupler includes a main line 11 and a coupling line. The coupling line includes a first coupling line portion 21. The first coupling line portion 21 is oppositely disposed on the first metal layer of the first chip with the main line 11. Wherein, the first metal layer is the metal layer in the first chip that is far from the substrate of the first chip, that is, the first metal layer is the MTT thick metal layer in the first chip.

[0048] In at least one embodiment, the first coupling line portion is oppositely disposed on the first metal layer of the first chip with the main line. That is, the radio frequency signal in the main line is transmitted to the first coupling line portion through magnetic coupling between the first coupling line portion and the main line on the same metal layer. Since the main line needs to transmit high-power signals, the main line needs to be disposed in the MTT thick metal layer that is far from the substrate of the first chip.

[0049] In a specific embodiment, the second coupling line portion at least partially overlaps the projection of the main line in the longitudinal direction to form a second compensation capacitor, and the second coupling line portion and the first coupling line portion are connected by a via hole.

[0050] In at least one embodiment, the second coupled line portion and the main line are respectively disposed on different metal layers, and the projections of the second coupled line portion and the main line in the longitudinal direction at least partially overlap to form a second compensation capacitor, thereby further improving the isolation and directivity of the coupler, and further meeting the requirements for directivity and isolation of the coupler in a wide frequency band (especially in two frequency points with a large span, for example, in the frequency band range of [1.4 GHz, 2.69 GHz]). Similarly, by adjusting the overlapping area of the second coupled line portion and the main line in the longitudinal direction, the capacitance value of the formed second compensation capacitor can be changed, thereby realizing flexible adjustment of the isolation and directivity of the coupler.

[0051] In a specific embodiment, the first chip includes a first metal layer and a second metal layer disposed adjacent to each other; the compensation portion includes a first metal block disposed on the first metal layer, and the first metal block at least partially overlaps with the first metal region in the longitudinal direction to form at least part of the first compensation capacitor, and / or, the compensation portion includes a second metal block disposed on the second metal layer, and the second metal block at least partially overlaps with the first metal region in the longitudinal direction to form at least part of the first compensation capacitor.

[0052] In at least one embodiment, the first metal layer is the metal layer adjacent to the top layer of the substrate in the first chip. The second metal layer is disposed on the adjacent upper layer of the first metal layer. A first metal block is disposed in the first metal layer, and a second metal block is disposed in the second metal layer. The projections of the first metal block and the second metal block in the longitudinal direction at least partially overlap, thereby forming a stacked capacitor, and this stacked capacitor can be a load matching capacitor disposed between the isolation end and the ground end of the coupled line. On this basis, since the first metal region is disposed on the substrate in this embodiment, therefore, the projection of the first metal block in the first metal layer and the first metal region on the substrate at least partially overlap in the longitudinal direction, thereby forming at least part of the first compensation capacitor. And / or, the projection of the second metal block in the second metal layer and the first metal region on the substrate at least partially overlap in the longitudinal direction, thereby forming at least part of the first compensation capacitor. Wherein, the first metal layer is the metal layer in the first chip far from the substrate of the first chip, that is, the first metal layer is the MTT thick metal layer in the first chip.

[0053] It should be noted that since the second metal layer is disposed adjacent to the first metal layer, if the first metal layer is the metal layer adjacent to the top layer of the substrate, there is still a first metal layer between the second metal layer of the first chip and the substrate. Therefore, in order to enable the second metal block on the second metal layer to at least partially overlap with the first metal region on the substrate in the longitudinal direction to form the first compensation capacitor, it is necessary to hollow out the projection area of the second metal block on the first metal layer, that is, the area where the second metal block projects onto the first metal layer is a hollowed-out area.

[0054] In a specific embodiment, the compensation portion includes at least some of the active devices in the coupler, and the at least some active devices at least partially overlap with the first metal region in the longitudinal direction to form the first compensation capacitor.

[0055] In at least one embodiment, the active device can be any type of active device such as a transistor or a vacuum tube. For example, the compensation portion includes at least some transistors that make up the switching device in the coupler, and the transistors can be MOS transistors or BJT transistors. The at least some active devices at least partially overlap with the first metal region in the longitudinal direction to form the first compensation capacitor; by adjusting the number or characteristics of the active devices, the capacitance value of the formed first compensation capacitor can be changed; thereby, the isolation and directivity of the coupler can be further improved, and further, the requirements for directivity and isolation of the coupler in a wide frequency band (especially in two frequency points with a large span, for example, in the frequency band range of [1.4 GHz, 2.69 GHz]) can be met.

[0056] In a specific embodiment, the compensation portion includes at least some of the passive devices in the coupler, and the at least some passive devices at least partially overlap with the first metal region in the longitudinal direction to form the first compensation capacitor.

[0057] In at least one embodiment, the passive device can be any type of passive device such as a resistor, an inductor, or a capacitor. For example, the compensation portion includes at least some resistor, inductor, or capacitor devices that make up the matching circuit in the coupler. Among them, the matching circuit can be a matching circuit connected to the isolation end or the coupling end of the coupler. The at least some passive devices at least partially overlap with the first metal region in the longitudinal direction to form the first compensation capacitor; by adjusting the number or characteristics of the passive devices, the capacitance value of the formed first compensation capacitor can be changed; thereby, the isolation and directivity of the coupler can be further improved, and further, the requirements for directivity and isolation of the coupler in a wide frequency band (especially in two frequency points with a large span, for example, in the frequency band range of [1.4 GHz, 2.69 GHz]) can be met.

[0058] In a specific embodiment, the first chip is disposed on the substrate in an inverted manner. The first chip includes a first metal layer and a second metal layer disposed adjacent to each other. Wherein, the first metal layer is the metal layer in the first chip that is far from the substrate of the first chip, and the second metal layer, the first metal layer, and the substrate are disposed in sequence from top to bottom.

[0059] It can be understood that the first chip includes a first metal layer and a second metal layer disposed adjacent to each other. When the first chip is inverted on the substrate, the second metal layer, the first metal layer, and the substrate are disposed in sequence from top to bottom, so as to better realize that the compensation part provided in the first chip and the first metal area on the substrate overlap at least partially in the longitudinal direction to form a first compensation capacitor.

[0060] In this embodiment, by disposing the first chip on the substrate in an inverted manner, not only can the first metal area on the substrate and the compensation part on the first chip overlap at least partially in the longitudinal direction to form a first compensation capacitor, so as to meet the requirements of the coupler for directivity and isolation in a wide frequency band (especially in two frequency points with a large span, for example, in the frequency band range of [1.4 GHz, 2.69 GHz]), but also the loss caused by jumpers or leads can be reduced, and the overall performance of the radio frequency front-end module can be optimized within a limited area.

[0061] In at least one embodiment, the projection of the first metal area on the main line in the longitudinal direction does not overlap. In this embodiment, in order to prevent the first metal area on the substrate from affecting the high-power signal normally transmitted by the main line, therefore, by further optimizing the position of the first metal area, the projection of the first metal area on the main line in the longitudinal direction does not overlap, so that the coupling generated by the overlap of the first metal area and the main line in the longitudinal direction can be avoided, thereby affecting the signal transmission of the main line. And since the overall insertion loss of the coupler will be affected when the first metal area overlaps with the main line, therefore, by making the projection of the first metal area on the main line in the longitudinal direction not overlap, the overall insertion loss of the coupler can be reduced. It can be understood that there is no first metal area in the area where the main line is projected onto the substrate.

[0062] In a specific embodiment, a partial segment of the first coupling line is wound to form a first compensation area 4. An active device and / or a passive device is provided in the first compensation area. The projection of the first compensation area and the first metal area in the longitudinal direction overlaps at least partially.

[0063] In at least one embodiment, the first compensation region 4 formed by winding the first coupling line portion 21 can be a region of any shape such as a circle, a quadrilateral, or a polygon. The first compensation region 4 can be a closed region or an open region. For example, as Figure 3 shown, the first compensation region 4 formed by winding the first coupling line portion is a closed quadrilateral region. The first coupling line portion includes a closed quadrilateral region composed of a first coupling coil segment 33 and a second coupling line segment 36.

[0064] In at least one embodiment, a plurality of active devices (such as switches) and / or passive devices (such as resistors, capacitors, inductors) are provided in the first compensation region. The active devices and / or passive devices can be the active devices (such as switches) and / or passive devices (such as resistors, capacitors, inductors) included in the coupler, or can be the active devices (such as switches) and / or passive devices (such as resistors, capacitors, inductors) in other circuits connected to the coupler. By arranging the active devices and / or passive devices in the first compensation region, the area ratio of the RF front-end module can be increased, making the layout of the RF front-end module more reasonable and compact. Since at least part of the active devices and / or passive devices can form a compensation capacitor with the first metal region, the projections of the first compensation region and the first metal region in the longitudinal direction overlap at least partially, so as to further meet the requirements for directivity and isolation in a wide frequency band (especially at two frequency points with a large span, for example, in the frequency band range of [1.4 GHz, 2.69 GHz]).

[0065] In a specific embodiment, the coupler further includes a matching circuit connected to the first coupling line portion. The matching circuit is located in the first compensation region. The matching circuit includes active devices and / or passive devices, and the active devices and / or passive devices include at least part of the compensation portion.

[0066] In at least one embodiment, the matching circuit may include a circuit composed of any combination of capacitors, resistors, inductors, switches, etc. The matching circuit is used to ensure the impedance matching of each port of the coupler, thereby improving the isolation and voltage standing wave ratio of the coupler. By arranging the active devices and / or passive devices included in the matching circuit connected to the first coupling line portion in the first compensation region, the area ratio of the RF front-end module can be increased, making the layout of the RF front-end module more reasonable and compact. Since at least part of the active devices and / or passive devices can form a compensation capacitor with the first metal region, the projections of the active devices and / or passive devices in the matching circuit and the first metal region in the longitudinal direction overlap at least partially, so as to further meet the requirements for directivity and isolation of the coupler in a wide frequency band (especially in two frequency points with a large span, for example, in the frequency band range of [1.4 GHz, 2.69 GHz]).

[0067] In at least one embodiment, the first metal region is a ground plane laid on the top layer of the substrate. It can be understood that since the first metal region is a ground plane laid on the top layer of the substrate, the ground plane (GND) on the top layer of the substrate can not only be used as the reference ground for other components, but also at least partially overlap with the compensation portion in the longitudinal direction to form a first compensation capacitor, so as to meet the requirements for directivity and isolation of the coupler in a wide frequency band (especially in two frequency points with a large span, for example, in the frequency band range of [1.4 GHz, 2.69 GHz]) without additional area or components.

[0068] In the description of this application, when certain terms are used to refer to specific components in the specification and claims. Those skilled in the art should understand that hardware manufacturers may use different terms to refer to the same component. The specification and claims do not use the difference in names as a way to distinguish components, but use the difference in functions of components as the criterion for distinction. As mentioned throughout the specification and claims, "including" is an open-ended term and should be interpreted as "including but not limited to"; "substantially" means that those skilled in the art can solve technical problems within a certain error range and basically achieve technical effects.

[0069] In the description of this application, it should be understood that the terms "upper", "lower", "front", "rear", "left", "right", "inside", etc. indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing this application and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation to this application.

[0070] In this application, unless otherwise clearly specified or defined, terms such as "installed", "connected", "joined", "fixed", etc. shall be understood in a broad sense. For example, it may be a fixed connection, a detachable connection, or an integral connection; it may be a mechanical connection or an electrical connection; it may be a direct connection, or indirectly connected through an intermediate medium, or the communication inside two components, or just surface contact. For those of ordinary skill in the art, the specific meanings of the above terms in this application can be understood according to specific circumstances.

[0071] In the description of this specification, the descriptions referring to terms such as "one embodiment", "some embodiments", "example", "specific example", or "some examples", etc. mean that the specific features, structures, materials, or characteristics described in connection with the embodiment or example are included in at least one embodiment or example of this application. In this specification, the schematic expressions of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials, or characteristics described can be combined in a suitable manner in any one or more embodiments or examples. In addition, without contradiction, those skilled in the art can combine and combine the different embodiments or examples described in this specification and the features of different embodiments or examples.

[0072] In addition, the terms "first" and "second" are only used for descriptive purposes and cannot be understood as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. Thus, the features defined with "first" and "second" may explicitly or implicitly include at least one of such features. In the description of this application, "a plurality of" means at least two, such as two, three, etc., unless otherwise clearly and specifically defined.

[0073] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of this application and are not intended to limit them; although this application has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that they can still modify the technical solutions recorded in the foregoing embodiments, or perform equivalent replacements for some of the technical features; and these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the various embodiments of this application.

Claims

1. A radio frequency front-end module, characterized in that, it includes a substrate and a first chip disposed on the substrate, the first chip includes a coupler; the coupler includes a compensation part, and a first metal region is disposed on the substrate, and the first metal region at least partially overlaps with the compensation part in the longitudinal direction to form a first compensation capacitor.

2. The radio frequency front-end module according to claim 1, characterized in that, the compensation part is disposed adjacent to the substrate.

3. The radio frequency front-end module according to claim 1, characterized in that, the coupler includes a main line and a coupling line, the coupling line includes a first coupling line part disposed on a first metal layer of the first chip, the compensation part includes at least part of the first coupling line part, and at least part of the first coupling line part at least partially overlaps with the first metal region in the longitudinal direction to form at least part of the first compensation capacitor.

4. The radio frequency front-end module according to claim 3, characterized in that, the coupling line further includes a second coupling line part disposed on a second metal layer of the first chip, the compensation part further includes at least part of the second coupling line part, and at least part of the second coupling line part at least partially overlaps with the first metal region in the longitudinal direction to form part of the first compensation capacitor.

5. The radio frequency front-end module according to claim 4, characterized in that, the first metal layer and the second metal layer are disposed adjacent to each other, the main line and the first coupling line part are disposed opposite to each other on the first metal layer, the second coupling line part and the main line at least partially overlap in the projection in the longitudinal direction to form a second compensation capacitor, and the second coupling line part and the first coupling line part are connected through vias. Wherein, the first metal layer is the metal layer in the first chip away from the substrate of the first chip.

6. The radio frequency front-end module according to claim 1, characterized in that, the first chip includes a first metal layer and a second metal layer disposed adjacent to each other, wherein, the first metal layer is the metal layer in the first chip away from the substrate of the first chip; the compensation part includes a first metal block disposed on the first metal layer, the first metal block at least partially overlaps with the first metal region in the longitudinal direction to form at least part of the first compensation capacitor; and / or, the compensation part includes a second metal block disposed on the second metal layer, the second metal block at least partially overlaps with the first metal region in the longitudinal direction to form at least part of the first compensation capacitor.

7. The radio frequency front-end module according to claim 1, characterized in that, the compensation part includes at least part of the active devices in the coupler, and the at least part of the active devices at least partially overlaps with the first metal region in the longitudinal direction to form the first compensation capacitor.

8. The radio frequency front-end module according to claim 1, characterized in that, the compensation part includes at least part of the passive devices in the coupler, and the at least part of the passive devices at least partially overlaps with the first metal region in the longitudinal direction to form the first compensation capacitor.

9. The radio frequency front-end module according to claim 1, characterized in that, the first chip is arranged on the substrate in an inverted manner, and the first chip includes a first metal layer and a second metal layer arranged adjacent to each other, wherein the first metal layer is the metal layer in the first chip that is far from the substrate of the first chip, and the second metal layer, the first metal layer and the substrate are arranged in sequence from top to bottom.

10. The radio frequency front-end module according to claim 3, characterized in that, the projection of the first metal region and the main line in the longitudinal direction does not overlap.

11. The radio frequency front-end module according to claim 3, characterized in that, part of the first coupling line is wound to form a first compensation region, and active devices and / or passive devices are arranged in the first compensation region, and the projection of the first compensation region and the first metal region in the longitudinal direction at least partially overlap.

12. The radio frequency front-end module according to claim 12, characterized in that, the coupler further includes a matching circuit connected to part of the first coupling line, the matching circuit is located in the first compensation region, the matching circuit includes active devices and / or passive devices, and the active devices and / or passive devices include at least part of the compensation part.

13. The radio frequency front-end module according to claim 1, characterized in that, the first metal region is a ground laid on the top layer of the substrate.

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