Controller, control circuit and compressor based on silicon carbide power tubes

Abstract

The application provides a controller based on a silicon carbide power tube, a control circuit and a compressor, the controller comprising a plurality of silicon carbide power tubes, a plurality of first fixing members, a PCBA circuit board and a shell, the PCBA circuit board being arranged in the shell; the pin area of each silicon carbide power tube is welded on the PCBA circuit board, and the heat dissipation area of each silicon carbide power tube is tightly attached to the controller bottom plate of the shell through the corresponding first fixing member; the pin area of each silicon carbide power tube is provided with a gate pin, a power supply side source pin, a drain pin and a driving side source pin, and an insulating particle is sleeved on each first fixing member; thus, the silicon carbide power tube with four pins is used to separate the power supply side source pin from the driving side source pin, so that the driving signal is separated from the load current, thereby reducing the interference of the current on the silicon carbide power driving signal; and the problem that the application scene with high response speed requirement cannot be met is solved.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of compressor control, in particular to a controller based on silicon carbide power tube, a control circuit and a compressor. BACKGROUND

[0002] At present, the traditional compressor controller usually adopts IGBT power tube to realize power conversion and control. However, IGBT power tube has the problem of large output loss in the case of high voltage and large power, which not only leads to energy waste, but also causes the working temperature to rise. The excessively high working temperature not only reduces the service life of the power tube, but also may affect the performance and stability of the entire controller. In addition, the switching frequency of IGBT power tube is relatively low, which is difficult to meet the application scenarios with high response speed requirements.

[0003] In addition, in terms of drive signal, the power tube is usually driven by a multi-channel integrated drive chip in the past. Although this method improves the integration level, interference between channels is easy to occur. Moreover, the pin design of the traditional power tube fails to effectively separate the drive signal and the load current. The electromagnetic interference generated by the load current may be coupled into the drive signal, causing the power tube to malfunction, thereby affecting the stability of the entire compressor control system. SUMMARY

[0004] The present application provides a controller based on silicon carbide power tube, a control circuit and a compressor, aiming to solve the problems that the power tube in the prior art cannot meet the application scenarios with high response speed requirements and the drive signal of the power tube is easily disturbed by the load current.

[0005] In a first aspect, the present application provides a controller based on silicon carbide power tube, comprising: a plurality of silicon carbide power tubes, a plurality of first fixing members, a PCBA circuit board and a shell, the PCBA circuit board being arranged in the shell; the pin area of each silicon carbide power tube in the plurality of silicon carbide power tubes is welded on the PCBA circuit board, and the heat dissipation area of each silicon carbide power tube is tightly attached to the controller bottom plate of the shell through the corresponding first fixing member of the plurality of first fixing members; wherein the pin area of each silicon carbide power tube is provided with a gate pin, a power side source pin, a drain pin and a drive side source pin; and each first fixing member of the plurality of first fixing members is sleeved with an insulating particle.

[0006] Further, a plurality of ceramic gaskets are further included, each ceramic gasket in the plurality of ceramic gaskets being arranged between the heat dissipation area of the corresponding silicon carbide power tube in the plurality of silicon carbide power tubes and the controller bottom plate; and the two sides of each ceramic gasket are smeared with thermal conductive silicone grease.

[0007] Further, an insulating pad is arranged between the controller cover of the shell and the controller bottom plate.

[0008] Further, the controller bottom plate is provided with a low-voltage connector, a high-voltage connector and a three-phase motor base, the low-voltage connector is arranged adjacent to the high-voltage connector, and the three-phase motor base is located below the low-voltage connector and the high-voltage connector.

[0009] Further, the plurality of silicon carbide power tubes include a first silicon carbide power tube, a second silicon carbide power tube, a third silicon carbide power tube, a fourth silicon carbide power tube, a fifth silicon carbide power tube and a sixth silicon carbide power tube, the first silicon carbide power tube is arranged in parallel with the second silicon carbide power tube; the third silicon carbide power tube is arranged in parallel with the fourth silicon carbide power tube; and the fifth silicon carbide power tube is arranged in parallel with the sixth silicon carbide power tube.

[0010] In a second aspect, the embodiment of the present application also provides a control circuit applied to the controller based on the patch silicon carbide power tube, the control circuit includes a control chip, a driving module and a three-phase half-bridge module, one end of the control chip is connected with one end of the driving module, the other end of the driving module is connected with a first end of the three-phase half-bridge module, a second end of the three-phase half-bridge module is connected with a positive electrode of an external high-voltage power supply, a third end of the three-phase half-bridge module is connected with an external compressor, and a fourth end of the three-phase half-bridge module is connected with a negative electrode of the external high-voltage power supply.

[0011] The three-phase half-bridge module includes a first bridge arm, a second bridge arm and a third bridge arm connected in parallel with each other, the first bridge arm includes a first upper bridge arm circuit and a first lower bridge arm circuit connected in series with each other, the first upper bridge arm circuit is a first silicon carbide power tube, and the first lower bridge arm circuit is a second silicon carbide power tube; the second bridge arm includes a second upper bridge arm circuit and a second lower bridge arm circuit connected in series with each other, the second upper bridge arm circuit is a third silicon carbide power tube, and the second lower bridge arm circuit is a fourth silicon carbide power tube; and the third bridge arm includes a third upper bridge arm circuit and a third lower bridge arm circuit connected in series with each other, the third upper bridge arm circuit is a fifth silicon carbide power tube, and the third lower bridge arm circuit is a sixth silicon carbide power tube.

[0012] The control chip is configured to generate a three-phase half-bridge starting signal and send the three-phase half-bridge starting signal to the driving module when detecting a driving control signal.

[0013] The driving module is configured to convert the three-phase half-bridge starting signal into a three-phase half-bridge driving signal and send the three-phase half-bridge driving signal to the three-phase half-bridge module.

[0014] The three-phase half-bridge module is used for driving an external compressor according to the three-phase half-bridge driving signal and a voltage input from an external high-voltage side power supply.

[0015] Further, the driving module comprises a first driving unit, a second driving unit, a third driving unit, a fourth driving unit, a fifth driving unit and a sixth driving unit, one end of the first driving unit is connected with the control chip, and the other end of the first driving unit is connected with the first upper bridge arm circuit; one end of the second driving unit is connected with the control chip, and the other end of the second driving unit is connected with the first lower bridge arm circuit; one end of the third driving unit is connected with the control chip, and the other end of the third driving unit is connected with the second upper bridge arm circuit; one end of the fourth driving unit is connected with the control chip, and the other end of the fourth driving unit is connected with the second lower bridge arm circuit; one end of the fifth driving unit is connected with the control chip, and the other end of the fifth driving unit is connected with the third upper bridge arm circuit; one end of the sixth driving unit is connected with the control chip, and the other end of the sixth driving unit is connected with the third lower bridge arm circuit.

[0016] Further, the first driving unit comprises a first driving chip, a first bootstrap circuit and a second resistor, the first driving chip is connected with the first bootstrap circuit; the first driving chip is connected with one end of the second resistor, and the other end of the second resistor is connected with the first upper bridge arm circuit;

[0017] The first bootstrap circuit comprises a first capacitor, a first diode, a second diode and a first resistor, a first end of the first capacitor is connected with a VEE2 pin of the first driving chip, a second end of the first capacitor is connected with a VCC2 pin of the first driving chip, the second end of the first capacitor is also connected with a negative electrode of the first diode, a positive electrode of the first diode is connected with a negative electrode of the second diode, a positive electrode of the second diode is connected with one end of the first resistor, and the other end of the first resistor is connected with a first external power supply;

[0018] An IN+ pin of the first driving chip is connected with the control chip, an IN- pin and a GND1 pin of the first driving chip are grounded, a VCC1 pin of the first driving chip is connected with a second external power supply, an OUT pin of the first driving chip is connected with one end of the second resistor, the other end of the second resistor is connected with a gate of a first silicon carbide power tube in the first upper bridge arm circuit, a driving side source electrode of the first silicon carbide power tube is connected with a VEE2 pin of the first driving chip, a drain of the first silicon carbide power tube is connected with a positive electrode of a high-voltage side power supply, a power supply side source electrode of the first silicon carbide power tube is connected with a corresponding lower bridge arm circuit and also connected with an external compressor.

[0019] Further, the second driving unit comprises a second driving chip and a third resistor, one end of the third resistor is connected with the second driving chip, and the other end of the third resistor is connected with the first lower bridge arm circuit.

[0020] The IN+ pin of the second driving chip is connected with the control chip, the IN- pin and the GND1 pin of the second driving chip are grounded, the VCC2 pin of the second driving chip is connected with the first external power supply, the VCC1 pin of the second driving chip is connected with the second external power supply, the OUT pin of the second driving chip is connected with one end of the third resistor, the other end of the third resistor is connected with the gate of the second silicon carbide power tube in the first lower bridge arm circuit, the driving side source electrode of the second silicon carbide power tube is connected with the VEE2 pin of the second driving chip, the drain of the second silicon carbide power tube is connected with the power supply side source electrode of the first silicon carbide power tube and an external compressor, and the power supply side source electrode of the second silicon carbide power tube is connected with the negative electrode of the external high-voltage side power supply through the ninth resistor.

[0021] In a third aspect, the embodiment of the present application further provides a compressor comprising the control circuit according to the second aspect.

[0022] The embodiment of the present application provides a controller based on a silicon carbide power tube, a control circuit and a compressor. The controller comprises a plurality of silicon carbide power tubes, a plurality of first fixing members, a PCBA circuit board and a shell. The PCBA circuit board is arranged in the shell. The pin area of each silicon carbide power tube is welded on the PCBA circuit board, and the heat dissipation area of each silicon carbide power tube is tightly attached to the controller bottom plate of the shell through the corresponding first fixing member. The pin area of each silicon carbide power tube is provided with a gate pin, a power supply side source electrode pin, a drain pin and a driving side source electrode pin, and an insulating particle is sleeved on each first fixing member. Thus, the power supply side source electrode pin and the driving side source electrode pin are separated by using the silicon carbide power tube with four pins, so that the driving signal and the load current are separated, and the interference of the current on the silicon carbide power driving signal is reduced. The problem that the application scene with high response speed requirement cannot be met is solved. BRIEF DESCRIPTION OF DRAWINGS

[0023] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the following will briefly introduce the drawings needed to be used in the embodiment description. Obviously, the drawings in the following description are some embodiments of the present application, and other drawings can also be obtained by those skilled in the art without creative labor.

[0024] Figure 1An exploded view of the controller based on the silicon carbide power tube according to an embodiment of the present application is provided;

[0025] Figure 2 A sectional view of the controller based on the silicon carbide power tube according to an embodiment of the present application is provided;

[0026] Figure 3 A structural schematic diagram of the controller based on the silicon carbide power tube according to an embodiment of the present application is provided;

[0027] Figure 4 Another structural schematic diagram of the controller based on the silicon carbide power tube according to an embodiment of the present application is provided;

[0028] Figure 5 A schematic block diagram of the control circuit according to an embodiment of the present application is provided;

[0029] Figure 6 A partial circuit schematic diagram of the control circuit according to an embodiment of the present application is provided. DETAILED DESCRIPTION

[0030] The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are some but not all of the embodiments of the present application. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative efforts should fall within the scope of the present application.

[0031] It should be understood that the terms "comprise" and "include" as used in the specification and the appended claims indicate the presence of the described features, integers, steps, operations, elements, and / or components but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups thereof.

[0032] It should also be understood that the terms used in the present application specification are only for the purpose of describing particular embodiments and are not intended to limit the present application. As used in the present application specification and the appended claims, the singular forms "a", "an" and "the" are intended to include the plural forms unless the context clearly indicates otherwise.

[0033] It should be further understood that the term "and / or" as used in the present application specification and the appended claims means one or more of the associated listed items as well as all possible combinations of the items.

[0034] Please refer to Figure 1 , Figure 2 and Figure 4The first aspect of the present application provides a silicon carbide power tube-based controller, comprising: a plurality of silicon carbide power tubes 1, a plurality of first fixing members 2, a PCBA circuit board 3 and a housing 4, the PCBA circuit board 3 is arranged in the housing 4; the pin area of each silicon carbide power tube 1 in the plurality of silicon carbide power tubes 1 is welded on the PCBA circuit board 3, and the heat dissipation area of each silicon carbide power tube 1 is fixed to the controller bottom plate 41 of the housing 4 through the corresponding first fixing member 2 in the plurality of first fixing members 2; wherein the pin area of each silicon carbide power tube 1 is provided with a gate pin, a power side source pin, a drain pin and a drive side source pin; and each first fixing member 2 in the plurality of first fixing members 2 is sleeved with an insulating particle 5.

[0035] In the present embodiment, the silicon carbide power tube-based controller is mainly applied to the compressor of the new energy automobile air conditioner, which is mainly composed of a plurality of silicon carbide power tubes 1, a plurality of first fixing members 2, a PCBA circuit board 3 and a housing 4; wherein the housing 4 includes a controller bottom plate 41 and a controller cover 42; the controller bottom plate 41 is provided with a mounting cavity, the PCBA circuit board 3 is located in the mounting cavity, and the PCBA circuit board 3 is detachably connected with the controller bottom plate 41 through a plurality of second fixing members 10; the controller cover 42 covers the PCBA circuit board 3, and the controller cover 42 is detachably connected with the controller bottom plate 41 through a plurality of third fixing members 11. The pin area of each silicon carbide power tube 1 in the plurality of silicon carbide power tubes 1 is welded on the corresponding area of the PCBA circuit board 3, wherein the pin area of each silicon carbide power tube 1 is provided with four pins, i.e. a gate pin, a power side source pin, a drain pin and a drive side source pin, so that the power pin (i.e. the power side source pin) and the signal pin (i.e. the drive side source pin) are separated by using the four-pin silicon carbide power tube 1, so that the drive signal and the load current are separated, thereby reducing the interference of the load current on the silicon carbide power drive signal. And the heat dissipation area of each silicon carbide power tube 1 is provided with a first fixing hole, and each first fixing member 2 can pass through the corresponding first fixing hole to fix the corresponding silicon carbide power tube 1 tightly on the controller bottom plate 41; wherein the controller bottom plate 41 is a metal heat dissipation surface, and the heat dissipation area of each silicon carbide power tube 1 is fixed on the metal heat dissipation surface, which is beneficial to the heat dissipation of the silicon carbide power tube 1, thereby improving the application power of the silicon carbide power in the actual circuit.

[0036] More specifically, the plurality of first fixing members 2 are preferably silicon carbide power tube fixing screws in this embodiment, the plurality of second fixing members 10 are preferably PCBA fixing screws in this embodiment, and the plurality of third fixing members 11 are preferably controller shell cover 42 fixing screws in this embodiment. In addition, since each silicon carbide power tube 1 generates high voltage and large current around it when it is working, and the corresponding first fixing member 2 is usually made of metal and has electrical conductivity, if the first fixing member 2 accidentally contacts the surrounding conductive parts (such as the pins of the silicon carbide power tube 1), a short circuit fault may be caused. Therefore, the insulating particles 5 are sleeved on each of the plurality of first fixing members 2 to increase the creepage distance and reduce electrical interference.

[0037] The controller based on silicon carbide power tubes in this embodiment uses silicon carbide power tubes 1 with four pins, which reduces the output loss, lowers the working temperature, and improves the output power efficiency compared with traditional IGBT power tubes. In addition, the power supply side source pin is separated from the driving side source pin, so that the driving signal is separated from the load current, thereby reducing the interference of the current on the silicon carbide power driving signal. At the same time, the problem that the response speed cannot meet the requirements of high-speed application scenarios is solved.

[0038] In an embodiment, as shown in Figures 1-2 , the controller further comprises a plurality of ceramic gaskets 6, each of which is arranged between the heat dissipation area of the corresponding silicon carbide power tube 1 and the controller bottom plate 41. The two sides of each ceramic gasket 6 are coated with heat-conducting silicone grease.

[0039] In this embodiment, the controller based on silicon carbide power tubes is further provided with a plurality of ceramic gaskets 6, wherein each of the plurality of ceramic gaskets 6 is arranged between the heat dissipation area of the corresponding silicon carbide power tube 1 and the controller bottom plate 41. In this embodiment, each ceramic gasket 6 is preferably an alumina ceramic gasket, which has good insulation performance and can isolate the corresponding silicon carbide power tube 1 from the controller bottom plate 41, thereby preventing electrical short circuit between them and ensuring electrical safety. At the same time, in order to improve the heat dissipation effect, heat-conducting silicone grease is coated on both sides of each ceramic gasket 6 (i.e. on the side in contact with the heat dissipation area of the corresponding silicon carbide power tube 1 and on the side in contact with the controller bottom plate 41), thereby facilitating the heat dissipation of the silicon carbide power tube 1.

[0040] In an embodiment, as shown in Figure 1 , Figure 2 , and Figure 4 , the controller further comprises an insulating pad 12 arranged between the controller shell cover 42 of the shell 4 and the controller bottom plate 41.

[0041] In the embodiment, since there are circuits and components with different potentials inside the controller based on silicon carbide power tubes, if the controller shell cover 42 directly contacts the controller bottom plate 41, short circuit, electric leakage and other problems may occur. In order to avoid these problems, the insulating pad 12 is arranged between the controller shell cover 42 and the controller bottom plate 41 to ensure electrical safety, and the insulating pad 12 can also play a sealing protection role.

[0042] In an embodiment, as shown in Figures 1-3 The controller bottom plate 41 is provided with a low-voltage connector 7, a high-voltage connector 8 and a three-phase motor seat 9. The low-voltage connector 7 is arranged adjacent to the high-voltage connector 8, and the three-phase motor seat 9 is located below the low-voltage connector 7 and the high-voltage connector 8.

[0043] In the embodiment, in order to ensure the normal work of the controller based on silicon carbide power tubes, the controller bottom plate 41 is provided with a low-voltage connector 7, a high-voltage connector 8 and a three-phase motor seat 9. The low-voltage connector 7 is used to connect low-voltage direct current to provide the required low voltage for the low-voltage components in the controller based on silicon carbide power tubes. The high-voltage connector is used to connect high-voltage direct current to provide the required high voltage for the low-voltage components in the controller based on silicon carbide power tubes. The three-phase motor seat 9 is an interface for connecting the controller to the external compressor, so as to connect the three-phase alternating current output by the controller to the motor of the external compressor, so as to realize accurate adjustment of the speed, torque and other parameters of the motor.

[0044] In an embodiment, the plurality of silicon carbide power tubes 1 includes a first silicon carbide power tube 1, a second silicon carbide power tube 1, a third silicon carbide power tube 1, a fourth silicon carbide power tube 1, a fifth silicon carbide power tube 1 and a sixth silicon carbide power tube 1. The first silicon carbide power tube 1 is arranged side by side with the second silicon carbide power tube 1. The third silicon carbide power tube 1 is arranged side by side with the fourth silicon carbide power tube 1. The fifth silicon carbide power tube 1 is arranged side by side with the sixth silicon carbide power tube 1.

[0045] In the embodiment, the number of the plurality of silicon carbide power tubes 1 is preferably embodied as follows: the plurality of silicon carbide power tubes 1 include a first silicon carbide power tube 1, a second silicon carbide power tube 1, a third silicon carbide power tube 1, a fourth silicon carbide power tube 1, a fifth silicon carbide power tube 1, and a sixth silicon carbide power tube 1; the first silicon carbide power tube 1 and the second silicon carbide power tube 1 are arranged in parallel in an up-down direction; the third silicon carbide power tube 1 and the fourth silicon carbide power tube 1 are arranged in parallel in the up-down direction; and the fifth silicon carbide power tube 1 and the sixth silicon carbide power tube 1 are arranged in parallel in the up-down direction, so as to form a three-phase half-bridge circuit by means of the first silicon carbide power tube 1, the second silicon carbide power tube 1, the third silicon carbide power tube 1, the fourth silicon carbide power tube 1, the fifth silicon carbide power tube 1, and the sixth silicon carbide power tube 1, and to drive the motor in the external compressor by means of the three-phase half-bridge circuit.

[0046] Please refer to Figures 5-6 , Figure 5 a schematic block diagram of the control circuit provided by an embodiment of the present application; Figure 6 a partial circuit schematic diagram of the control circuit provided by an embodiment of the present application; wherein, Figure 6 a circuit diagram in which the first driving unit and the second driving unit of the driving module in the control circuit are connected to the first upper bridge arm circuit and the first lower bridge arm circuit of the three-phase half-bridge module; the second aspect of the present application provides a control circuit 100 applied to the controller based on the patch silicon carbide power tube in the first aspect, the control circuit 100 includes a control chip 110, a driving module 120, and a three-phase half-bridge module 130, one end of the control chip 110 is connected to one end of the driving module 120, the other end of the driving module 120 is connected to the first end of the three-phase half-bridge module 130, the second end of the three-phase half-bridge module 130 is connected to the positive electrode of the external high-voltage side power supply, the third end of the three-phase half-bridge module 130 is connected to the external compressor, and the fourth end of the three-phase half-bridge module 130 is connected to the negative electrode of the external high-voltage side power supply;

[0047] The three-phase half-bridge module 130 includes a first bridge arm, a second bridge arm, and a third bridge arm connected in parallel with each other, the first bridge arm includes a first upper bridge arm circuit and a first lower bridge arm circuit connected in series with each other, the first upper bridge arm circuit is a first silicon carbide power tube Q8, and the first lower bridge arm circuit is a second silicon carbide power tube Q5; the second bridge arm includes a second upper bridge arm circuit and a second lower bridge arm circuit connected in series with each other, the second upper bridge arm circuit is a third silicon carbide power tube, and the second lower bridge arm circuit is a fourth silicon carbide power tube; and the third bridge arm includes a third upper bridge arm circuit and a third lower bridge arm circuit connected in series with each other, the third upper bridge arm circuit is a fifth silicon carbide power tube, and the third lower bridge arm circuit is a sixth silicon carbide power tube;

[0048] The control chip 110 is configured to generate a three-phase half-bridge starting signal and send the three-phase half-bridge starting signal to the driving module 120 when detecting a driving control signal.

[0049] The driving module 120 is configured to convert the three-phase half-bridge starting signal into a three-phase half-bridge driving signal and send the three-phase half-bridge driving signal to the three-phase half-bridge module 130.

[0050] The three-phase half-bridge module 130 is configured to drive an external compressor according to the three-phase half-bridge driving signal and a voltage input from an external high-voltage power supply.

[0051] In the embodiment, in order to drive the external compressor connected to the three-phase half-bridge module 130, the control circuit 100 in the application can be used. Specifically, the three-phase half-bridge module 130 in the control circuit 100 in the application includes a first bridge arm, a second bridge arm and a third bridge arm connected in parallel with each other, the first bridge arm includes a first upper bridge arm circuit and a first lower bridge arm circuit connected in series with each other, the second bridge arm includes a second upper bridge arm circuit and a second lower bridge arm circuit connected in series with each other, and the third bridge arm includes a third upper bridge arm circuit and a third lower bridge arm circuit connected in series with each other. The first upper bridge arm circuit, the first lower bridge arm circuit, the second upper bridge arm circuit, the second lower bridge arm circuit, the third upper bridge arm circuit and the third lower bridge arm circuit are all silicon carbide power tubes including four pins, i.e., a gate pin, a power supply side source pin, a drain pin and a driving side source pin, so that the silicon carbide power tube can reduce output loss, reduce working temperature and improve output power efficiency. The power supply side source pin and the driving side source pin are separated, so that the silicon carbide power tube can separate the driving signal and the load current when working, thereby reducing the interference of the current on the silicon carbide power driving signal.

[0052] In the embodiment, the control chip 110 generates a three-phase half-bridge starting signal and sends the three-phase half-bridge starting signal to the driving module 120 when detecting a driving control signal. The control chip 110 can be a DSP chip (Digital Signal Process) in the embodiment. The driving module 120 receives the three-phase half-bridge starting signal, converts the three-phase half-bridge starting signal into a three-phase half-bridge driving signal, and sends the three-phase half-bridge driving signal to the three-phase half-bridge module 130. At this time, the three-phase half-bridge module 130 receives the three-phase half-bridge driving signal, and drives an external compressor according to the three-phase half-bridge driving signal and a voltage input from an external high-voltage power supply.

[0053] In an embodiment, as shown in FIG. 1, the control circuit 100 includes a control chip 110, a driving module 120 and a three-phase half-bridge module 130. Figure 5 and Figure 6As shown, the drive module 120 includes a first drive unit, a second drive unit, a third drive unit, a fourth drive unit, a fifth drive unit and a sixth drive unit, one end of the first drive unit is connected with the control chip 110, and the other end of the first drive unit is connected with the first upper bridge arm circuit; one end of the second drive unit is connected with the control chip 110, and the other end of the second drive unit is connected with the first lower bridge arm circuit; one end of the third drive unit is connected with the control chip 110, and the other end of the third drive unit is connected with the second upper bridge arm circuit; one end of the fourth drive unit is connected with the control chip 110, and the other end of the fourth drive unit is connected with the second lower bridge arm circuit; one end of the fifth drive unit is connected with the control chip 110, and the other end of the fifth drive unit is connected with the third upper bridge arm circuit; one end of the sixth drive unit is connected with the control chip 110, and the other end of the sixth drive unit is connected with the third lower bridge arm circuit.

[0054] In the embodiment, in order to protect the control circuit 100 from high voltage damage, the drive module 120 in the embodiment includes six drive units, i.e., a first drive unit, a second drive unit, a third drive unit, a fourth drive unit, a fifth drive unit and a sixth drive unit, which correspond to the six silicon carbide power tubes in the three-phase half-bridge module 130 one by one, and each drive unit can only drive a single silicon carbide power tube. Specifically, one end of the first drive unit is connected with the control chip 110, and the other end of the first drive unit is connected with the first upper bridge arm circuit; one end of the second drive unit is connected with the control chip 110, and the other end of the second drive unit is connected with the first lower bridge arm circuit; one end of the third drive unit is connected with the control chip 110, and the other end of the third drive unit is connected with the second upper bridge arm circuit; one end of the fourth drive unit is connected with the control chip 110, and the other end of the fourth drive unit is connected with the second lower bridge arm circuit; one end of the fifth drive unit is connected with the control chip 110, and the other end of the fifth drive unit is connected with the third upper bridge arm circuit; one end of the sixth drive unit is connected with the control chip 110, and the other end of the sixth drive unit is connected with the third lower bridge arm circuit; so that each drive unit in the drive module 120 completely isolates the input side (i.e., the three-phase half-bridge start signal sent by the control chip 110) from the output side (i.e., the corresponding silicon carbide power tube), to prevent the influence of the transient voltage or noise on the high voltage side on the low voltage side, and at the same time protect the control circuit 100 from high voltage damage.

[0055] In an embodiment, as Figure 5 and Figure 6As shown, the first driving unit comprises a first driving chip U13, a first bootstrap circuit and a second resistor R2, the first driving chip U13 is connected with the first bootstrap circuit; the first driving chip U13 is connected with one end of the second resistor R2, and the other end of the second resistor R2 is connected with the first upper bridge arm circuit;

[0056] The first bootstrap circuit comprises a first capacitor C1, a first diode D1, a second diode D2 and a first resistor R1, a first end of the first capacitor C1 is connected with a VEE2 pin of the first driving chip U13, a second end of the first capacitor C1 is connected with a VCC2 pin of the first driving chip U13, the second end of the first capacitor C1 is also connected with a negative electrode of the first diode D1, a positive electrode of the first diode D1 is connected with a negative electrode of the second diode D2, a positive electrode of the second diode D2 is connected with one end of the first resistor R1, and the other end of the first resistor R1 is connected with a first external power supply;

[0057] An IN+ pin of the first driving chip U13 is connected with the control chip 110, an IN- pin and a GND1 pin of the first driving chip U13 are grounded, a VCC1 pin of the first driving chip U13 is connected with a second external power supply, an OUT pin of the first driving chip U13 is connected with one end of the second resistor R2, the other end of the second resistor R2 is connected with a gate of a first silicon carbide power tube Q8 in the first upper bridge arm circuit, a driving side source of the first silicon carbide power tube Q8 is connected with a VEE2 pin of the first driving chip U13, a drain of the first silicon carbide power tube Q8 is connected with a positive electrode of a high-voltage side power supply, and a power supply side source of the first silicon carbide power tube Q8 is connected with a corresponding lower bridge arm circuit and an external compressor.

[0058] In the embodiment, in the bridge circuit, since the source voltage of the power tube in the upper bridge arm circuit changes with the output, it is difficult to meet the conduction condition by directly driving the gate of the power tube, therefore, in the embodiment, the first driving unit comprises the first driving chip U13 and the first bootstrap circuit, the first driving chip U13 is connected with the first bootstrap circuit, so that the voltage flowing through the gate of the silicon carbide power tube is raised by using the first bootstrap circuit; wherein the first driving chip U13 is a single-channel isolated driving chip, and in the embodiment, the first driving chip U13 can be PN7902M, SiLM5350 and the like.

[0059] Specifically, the first bootstrap circuit comprises a first capacitor C1, a first diode D1, a second diode D2 and a first resistor R1, wherein a first end of the first capacitor C1 is connected with a VEE2 pin of the first drive chip U13, a second end of the first capacitor C1 is connected with a VCC2 pin of the first drive chip U13, the second end of the first capacitor C1 is also connected with a negative electrode of the first diode D1, a positive electrode of the first diode D1 is connected with a negative electrode of the second diode D2, a positive electrode of the second diode D2 is connected with one end of the first resistor R1, and the other end of the first resistor R1 is connected with a first external power supply, so that when the second silicon carbide power tube Q5 in the first lower bridge arm circuit is turned on, the first external power supply charges the first capacitor C1 through the first resistor R1, the first diode D1 and the second diode D2; and when the first silicon carbide power tube Q8 in the first upper bridge arm circuit needs to be turned on, the first capacitor C1 starts to discharge to the first drive chip U13, so as to turn on the first silicon carbide power tube Q8; wherein the first external power supply in the embodiment represents a +15V voltage; and the second external power supply represents a +3.3V.

[0060] In addition, a gate of the first silicon carbide power tube Q8 is connected with one end of a fourth resistor R4 in the first drive unit and one end of a fifth resistor R5 in the first drive unit; the gate of the first silicon carbide power tube Q8 is also connected with a CLAMP pin of the first drive chip U13, so as to prevent the Miller current from causing false turn-on; and the other end of the fourth resistor R4 is connected with one end of a second capacitor C2 in the first drive unit; a drive side source of the first silicon carbide power tube Q8 is connected with the other end of the second capacitor C2 and the other end of the fifth resistor R5.

[0061] More specifically, a flow direction of a drive signal channel in the first upper bridge arm circuit sequentially passes through a first drive chip U13 positive phase gate drive voltage control input IN+ pin, a drive output OUT pin, a second resistor R2, a gate of a first silicon carbide power tube Q8, a drive side source of the first silicon carbide power tube Q8, and then returns to an output ground VEE2 pin of the first drive chip U13, so as to form a loop; and a flow direction of a load current channel in the first upper bridge arm circuit sequentially passes through a P pole, a drain of the first silicon carbide power tube Q8, a power supply side source of the first silicon carbide power tube Q8, and then passes through a U phase output end connected with an external compressor. Thus, the drive signal channel and the load current channel in the first upper bridge arm circuit are separated, and the interference of the load current on the first silicon carbide power drive signal is reduced. Figure 6 P in the above formula represents a positive pole of a high-voltage side power supply.

[0062] And, the circuit of the third driving unit and the circuit of the fifth driving unit are similar to the circuit of the first driving unit, and the connection relationship between the third driving unit and the third silicon carbide power tube in the second upper bridge arm circuit and the connection relationship between the fifth driving unit and the fifth silicon carbide power tube in the third upper bridge arm circuit are similar to the connection relationship between the first driving unit and the first silicon carbide power tube Q8 in the first upper bridge arm circuit, which will not be described one by one.

[0063] In an embodiment, as shown in Figure 5 and Figure 6 The second driving unit includes a second driving chip U12 and a third resistor R3, the second driving chip U12 is connected with one end of the third resistor R3, and the other end of the third resistor R3 is connected with the first lower bridge arm circuit.

[0064] The IN+ pin of the second driving chip U12 is connected with the control chip 110, the IN- pin and the GND1 pin of the second driving chip U12 are grounded, the VCC2 pin of the second driving chip U12 is connected with the first external power supply, the VCC1 pin of the second driving chip U12 is connected with the second external power supply, the OUT pin of the second driving chip U12 is connected with one end of the third resistor R3, the other end of the third resistor R3 is connected with the gate of the second silicon carbide power tube Q5 in the first lower bridge arm circuit, the driving side source of the second silicon carbide power tube Q5 is connected with the VEE2 pin of the second driving chip U12, the drain of the second silicon carbide power tube Q5 is connected with the power supply side source of the first silicon carbide power tube Q8, and is also connected with an external compressor, and the power supply side source of the second silicon carbide power tube Q5 is connected with the negative electrode of the external high-voltage side power supply through the ninth resistor R9.

[0065] In the embodiment, the second driving unit includes a first driving chip U13 and a third resistor R3, wherein the second driving chip U12 is connected with one end of the third resistor R3, and the other end of the third resistor R3 is connected with the first lower bridge arm circuit; the second driving chip U12 is a single-channel isolated driving chip, and in the embodiment, the second driving chip U12 can be a chip of PN7902M, SiLM5350, etc. Moreover, the fourth driving chip and the sixth driving chip are the same type of chip as the second driving chip U12, which will not be described one by one.

[0066] Further, the gate of the second silicon carbide power tube Q5 in the first lower bridge arm circuit is connected with one end of the sixth resistor R6 in the first driving unit and one end of the seventh resistor R7 in the first driving unit; the gate of the first silicon carbide power tube Q8 is also connected with the CLAMP pin of the second driving chip U12, thereby preventing the Miller current from causing false turn-on; the other end of the sixth resistor R6 is connected with one end of the third capacitor C3 in the second driving unit; the driving side source of the second silicon carbide power tube Q5 is connected with the other end of the third capacitor C3 and the other end of the seventh resistor R7. Further, the second driving unit further comprises a fourth capacitor C4, a fifth capacitor C5 and an eighth resistor R8; one end of the fourth capacitor C4 is connected with the VCC2 pin of the second driving chip U12, the other end is connected with the ground and one end of the eighth resistor R8; one end of the fifth capacitor C5 is connected with the VCC2 pin of the second driving chip U12, the other end is connected with the VEE2 pin of the second driving chip U12 and the driving side source of the second silicon carbide power tube Q5, the other end of the eighth resistor R8 is connected with the ground and the IN- pin and the GND1 pin of the second driving chip U12.

[0067] More specifically, the flow direction of the driving signal channel in the first lower bridge arm circuit is that the three-phase half-bridge start signal (PWMU-) is output from the control chip 110, passes through the IN+ pin of the positive phase gate driving voltage control input of the second driving chip U12, the OUT pin of the driving output, the third resistor R3, the gate of the second silicon carbide power tube Q5, the driving side source of the second silicon carbide power tube Q5, and then returns to the output ground VEE2 pin of the second driving chip U12, thereby forming a loop; and the flow direction of the load current channel in the first lower bridge arm circuit is that the U-phase output, the drain of the second silicon carbide power tube Q5, the power supply side source of the second silicon carbide power tube Q5, and then to the N pole. Thus, the separation of the driving signal channel and the load current channel in the first lower bridge arm circuit is realized, and the interference of the load current on the second silicon carbide power driving signal is reduced. Wherein, Figure 6 The N pole in the above formula represents the negative pole of the high-voltage side power supply.

[0068] Further, the circuit of the fourth driving unit and the circuit of the sixth driving unit are similar to the circuit of the second driving unit, and the connection relationship between the fourth driving unit and the fourth silicon carbide power tube in the second lower bridge arm circuit and the connection relationship between the sixth driving unit and the sixth silicon carbide power tube in the third lower bridge arm circuit are similar to the connection relationship between the second driving unit and the second silicon carbide power tube Q5 in the first lower bridge arm circuit, which will not be described here.

[0069] Please refer to Figures 5-6The third aspect of the present application provides a compressor comprising the control circuit 100 of the second aspect.

[0070] In the embodiment, the present application provides a compressor comprising the control circuit 100 of any of the foregoing embodiments. The embodiment can solve the problem that the response speed requirement cannot be met in the application scenario by using the control circuit 100, and separate the driving signal from the load current, thereby reducing the interference of the current on the silicon carbide power driving signal.

[0071] The above merely provides a specific embodiment of the present application, but the protection scope of the present application is not limited thereto, and any person skilled in the art can easily think of various equivalent modifications or replacements within the technical range disclosed by the present application, and these modifications or replacements shall be encompassed within the protection scope of the present application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.

Claims

1. A silicon carbide power transistor based controller, characterized by, The application relates to a controller based on silicon carbide power tubes. The controller based on silicon carbide power tubes comprises a plurality of silicon carbide power tubes, a plurality of first fixing members, a PCBA circuit board and a shell, the PCBA circuit board is arranged in the shell, the pin area of each silicon carbide power tube in the plurality of silicon carbide power tubes is welded on the PCBA circuit board, and the heat dissipation area of each silicon carbide power tube is fixed on the controller bottom plate of the shell through the corresponding first fixing member in the plurality of first fixing members; wherein the pin area of each silicon carbide power tube is provided with a gate pin, a power supply side source pin, a drain pin and a driving side source pin; and an insulating particle is sleeved on each first fixing member in the plurality of first fixing members; the controller bottom plate is a metal heat dissipation surface, the heat dissipation area of each silicon carbide power tube is fixed on the metal heat dissipation surface through the corresponding first fixing member; the controller based on silicon carbide power tubes further comprises a plurality of ceramic gaskets, each ceramic gasket in the plurality of ceramic gaskets is arranged between the heat dissipation area of the corresponding silicon carbide power tube in the plurality of silicon carbide power tubes and the controller bottom plate; and the two sides of each ceramic gasket are smeared with heat-conducting silicone grease; the power supply side source pin and the driving side source pin included in the pin area of each silicon carbide power tube are separated, so that the driving signal and the load current are separated; the ceramic gasket is an alumina ceramic gasket; The controller based on silicon carbide power tubes further comprises an insulating pad, the insulating pad is arranged between the controller shell cover of the shell and the controller bottom plate.

2. The silicon carbide power transistor-based controller of claim 1, wherein, The controller bottom plate is provided with a low-voltage connector, a high-voltage connector and a three-phase motor seat, the low-voltage connector and the high-voltage connector are arranged adjacent to each other, and the three-phase motor seat is located below the low-voltage connector and the high-voltage connector.

3. The silicon carbide power transistor-based controller of claim 1, wherein, The plurality of silicon carbide power tubes comprise a first silicon carbide power tube, a second silicon carbide power tube, a third silicon carbide power tube, a fourth silicon carbide power tube, a fifth silicon carbide power tube and a sixth silicon carbide power tube, the first silicon carbide power tube and the second silicon carbide power tube are arranged side by side; the third silicon carbide power tube and the fourth silicon carbide power tube are arranged side by side; and the fifth silicon carbide power tube and the sixth silicon carbide power tube are arranged side by side.

4. A control circuit applied to the patch-based silicon carbide power tube controller of any one of claims 1-3, characterized in that, The control circuit comprises a control chip, a driving module and a three-phase half-bridge module, one end of the control chip is connected with one end of the driving module, the other end of the driving module is connected with the first end of the three-phase half-bridge module, the second end of the three-phase half-bridge module is connected with the positive pole of an external high-voltage power supply, the third end of the three-phase half-bridge module is connected with an external compressor, and the fourth end of the three-phase half-bridge module is connected with the negative pole of the external high-voltage power supply. The three-phase half-bridge module comprises a first bridge arm, a second bridge arm and a third bridge arm connected in parallel with each other, the first bridge arm comprises a first upper bridge arm circuit and a first lower bridge arm circuit connected in series with each other, the first upper bridge arm circuit is a first silicon carbide power tube, and the first lower bridge arm circuit is a second silicon carbide power tube; the second bridge arm comprises a second upper bridge arm circuit and a second lower bridge arm circuit connected in series with each other, the second upper bridge arm circuit is a third silicon carbide power tube, and the second lower bridge arm circuit is a fourth silicon carbide power tube; the third bridge arm comprises a third upper bridge arm circuit and a third lower bridge arm circuit connected in series with each other, the third upper bridge arm circuit is a fifth silicon carbide power tube, and the third lower bridge arm circuit is a sixth silicon carbide power tube; The control chip is configured to generate a three-phase half-bridge starting signal and send the three-phase half-bridge starting signal to the drive module when detecting a drive control signal; The drive module is configured to convert the three-phase half-bridge starting signal into a three-phase half-bridge drive signal and send the three-phase half-bridge drive signal to the three-phase half-bridge module; The three-phase half-bridge module is configured to drive an external compressor according to the three-phase half-bridge drive signal and a voltage input from an external high-voltage power supply; The first upper bridge arm circuit, the first lower bridge arm circuit, the second upper bridge arm circuit, the second lower bridge arm circuit, the third upper bridge arm circuit and the third lower bridge arm circuit are all silicon carbide power tubes comprising a gate pin, a power supply side source pin, a drain pin and a drive side source pin; a controller bottom plate in the silicon carbide power tube-based controller is a metal heat dissipation surface, a heat dissipation area of each silicon carbide power tube is fixed to the metal heat dissipation surface through a corresponding first fixing member; the silicon carbide power tube-based controller further comprises a plurality of ceramic gaskets, each ceramic gasket in the plurality of ceramic gaskets is arranged between the heat dissipation area of the corresponding silicon carbide power tube and the controller bottom plate; and both sides of each ceramic gasket are smeared with heat-conducting silicone grease; the power supply side source pin and the drive side source pin included in the pin area of each silicon carbide power tube are separated, so that the drive signal and the load current are separated; the ceramic gasket is an aluminum oxide ceramic gasket; The silicon carbide power tube-based controller further comprises an insulating pad arranged between the controller shell cover of the shell and the controller bottom plate.

5. The control circuit of claim 4, wherein, The driving module comprises a first driving unit, a second driving unit, a third driving unit, a fourth driving unit, a fifth driving unit and a sixth driving unit, one end of the first driving unit is connected with the control chip, and the other end of the first driving unit is connected with the first upper bridge arm circuit; one end of the second driving unit is connected with the control chip, and the other end of the second driving unit is connected with the first lower bridge arm circuit; one end of the third driving unit is connected with the control chip, and the other end of the third driving unit is connected with the second upper bridge arm circuit; one end of the fourth driving unit is connected with the control chip, and the other end of the fourth driving unit is connected with the second lower bridge arm circuit; one end of the fifth driving unit is connected with the control chip, and the other end of the fifth driving unit is connected with the third upper bridge arm circuit; one end of the sixth driving unit is connected with the control chip, and the other end of the sixth driving unit is connected with the third lower bridge arm circuit.

6. The control circuit of claim 5, wherein, The first driving unit comprises a first driving chip, a first bootstrap circuit and a second resistor, the first driving chip is connected with the first bootstrap circuit; the first driving chip is connected with one end of the second resistor, and the other end of the second resistor is connected with the first upper bridge arm circuit; The first bootstrap circuit comprises a first capacitor, a first diode, a second diode and a first resistor, a first end of the first capacitor is connected with a VEE2 pin of the first driving chip, a second end of the first capacitor is connected with a VCC2 pin of the first driving chip, the second end of the first capacitor is also connected with a negative electrode of the first diode, a positive electrode of the first diode is connected with a negative electrode of the second diode, a positive electrode of the second diode is connected with one end of the first resistor, and the other end of the first resistor is connected with a first external power supply; An IN+ pin of the first driving chip is connected with the control chip, an IN- pin and a GND1 pin of the first driving chip are grounded, a VCC1 pin of the first driving chip is connected with a second external power supply, an OUT pin of the first driving chip is connected with one end of the second resistor, the other end of the second resistor is connected with a gate of a first silicon carbide power tube in the first upper bridge arm circuit, a driving side source electrode of the first silicon carbide power tube is connected with a VEE2 pin of the first driving chip, a drain of the first silicon carbide power tube is connected with a positive electrode of a high-voltage side power supply, and a power supply side source electrode of the first silicon carbide power tube is connected with a corresponding lower bridge arm circuit and an external compressor.

7. The control circuit of claim 6, wherein, The second driving unit comprises a second driving chip and a third resistor, the second driving chip is connected with one end of the third resistor, and the other end of the third resistor is connected with the first lower bridge arm circuit; The IN+ pin of the second drive chip is connected with the control chip, the IN- pin and the GND1 pin of the second drive chip are grounded, the VCC2 pin of the second drive chip is connected with the first external power supply, the VCC1 pin of the second drive chip is connected with the second external power supply, the OUT pin of the second drive chip is connected with one end of the third resistor, the other end of the third resistor is connected with the gate of the second silicon carbide power tube in the first lower bridge arm circuit, the drive side source electrode of the second silicon carbide power tube is connected with the VEE2 pin of the second drive chip, the drain electrode of the second silicon carbide power tube is connected with the power supply side source electrode of the first silicon carbide power tube and an external compressor, and the power supply side source electrode of the second silicon carbide power tube is connected with the negative electrode of an external high-voltage side power supply through a ninth resistor.

8. A compressor characterized by, The control circuit of any one of claims 4-7.

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