Radio frequency signal control circuit, radio frequency power supply and semiconductor process equipment

Abstract

The invention provides a radio frequency signal control circuit. The radio frequency signal control circuit comprises a power amplifier module, a synthesis and power acquisition module, a signal processing module and a controller, according to the invention, the power amplifier module amplifies the radio frequency signal, the synthesis and power acquisition module monitors the power characteristic of the radio frequency signal in real time and generates the acquisition signal, the signal processing module can accurately determine the forward power and the reflection power according to the acquisition signal, and then the controller dynamically adjusts the power supply voltage of the power amplifier module. The power amplifier module is ensured to operate in an optimal working state, thereby improving the transmission efficiency and stability of radio frequency signals, reducing power loss and reflection loss, prolonging the service life of semiconductor equipment, and improving the reliability and performance of a circuit.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor manufacturing, and particularly to a radio frequency signal control circuit, a radio frequency power supply, and a semiconductor process equipment. Background Art

[0002] With the increase in semiconductor process complexity, a high-precision and high-power output radio frequency power supply is required in some semiconductor processes. When collecting the reflected power of the output radio frequency power supply, since the forward power output accuracy of the power supply depends on the reflected power detection accuracy, using the existing control method, in the case of a certain reflection, the collected reflected power is not accurate. Summary of the Invention

[0003] In view of the above problems, embodiments of the present invention are proposed to provide a radio frequency signal control circuit, a radio frequency power supply, and a semiconductor process equipment that overcome the above problems or at least partially solve the above problems.

[0004] To solve the above problems, an embodiment of the present invention discloses a radio frequency signal control circuit, including:

[0005] A power amplifier module, configured to obtain a radio frequency signal, amplify the radio frequency signal, and output the amplified radio frequency signal;

[0006] A synthesis and power collection module, connected to the power amplifier module, configured to receive the radio frequency signal output by the power amplifier module and determine a collection signal according to the radio frequency signal;

[0007] A signal processing module, connected to the synthesis and power collection module, configured to receive the collection signal output by the synthesis and power signal, and determine the forward power and the reflected power according to the collection signal;

[0008] A controller, connected to the signal processing module, configured to receive the forward power and the reflected power output by the signal processing module, and generate a supply voltage for the power amplifier module according to the forward power and the reflected power.

[0009] Optionally, the synthesis and power collection module is further connected to the load module. The synthesis and power collection module is configured to synthesize a radio frequency power signal based on the radio frequency signal, input the radio frequency power signal into the load module, and detect the load impedance value and reflection coefficient of the load module. When the load impedance value is not the preset impedance value and the reflection coefficient is not the preset value, a radio frequency current signal and a radio frequency input voltage signal are collected from the radio frequency power signal, and the radio frequency current signal and the radio frequency input voltage signal are output as the collected signals. When the load impedance value is not the preset impedance value and the reflection coefficient is the preset value, a forward power coupled voltage signal and a reflected power coupled voltage signal are collected from the radio frequency power signal, and the forward power coupled voltage signal and the reflected power coupled voltage signal are output as the collected signals.

[0010] Optionally, the signal processing module is further configured to receive the radio frequency current signal and the radio frequency input voltage signal output by the synthesis and power collection module, or receive the forward power coupled voltage signal and the reflected power coupled voltage signal input by the synthesis and power collection module, determine the forward power and the reflected power according to the radio frequency current signal and the radio frequency input voltage signal, or determine the forward power and the reflected power according to the forward power coupled voltage signal and the reflected power coupled voltage signal, and output the forward power and the reflected power.

[0011] Optionally, the signal processing module includes a first processing module, a second processing module, and a first analog-to-digital conversion module. The first processing module is configured to determine a first forward power according to the radio frequency current signal and the radio frequency input voltage signal, and input the first forward power into the first analog-to-digital conversion module. The second processing module is configured to determine a first reflected power according to the radio frequency current signal and the radio frequency input voltage signal, and input the first reflected power into the analog-to-digital conversion module. The first analog-to-digital conversion module is configured to convert the first forward power and the first reflected power from analog signals into digital signals, and send the first forward power and the first reflected power in digital signal form to the controller.

[0012] Optionally, the first processing module includes an adder circuit, a first multiplier, a first low-pass filter, and a first operational amplifier module. The adder circuit is configured to sum the radio frequency current signal and the radio frequency input voltage signal to obtain a first voltage signal. The first multiplier is configured to square the first voltage signal to obtain a first signal. The first low-pass filter is configured to filter the first signal to obtain a second signal. The first operational amplifier module is configured to obtain a first operational amplifier multiple, and amplify the second signal according to the first operational amplifier multiple to obtain the first forward power.

[0013] Optionally, the second processing module includes a subtraction circuit, a second multiplier, a second low-pass filter, and a second operational amplifier module.

[0014] The subtraction circuit is configured to obtain a second voltage signal by taking the difference between the radio frequency current signal and the radio frequency input voltage signal. The second multiplier is configured to square the second voltage signal to obtain a third signal. The second low-pass filter is configured to filter the third signal to obtain a fourth signal. The second operational amplifier module is configured to obtain a second operational amplifier magnification factor and amplify the fourth signal according to the second operational amplifier magnification factor to obtain the first reflected power.

[0015] Optionally, the signal processing module further includes a third processing module and a second analog-to-digital conversion module. The third processing module is configured to determine a second forward power and a second reflected power according to the forward power coupled voltage signal and the reflected power coupled voltage signal, and send the second forward power and the second reflected power to the second analog-to-digital conversion module. The second analog-to-digital conversion module is configured to convert the second forward power and the second reflected power from analog signals to digital signals, and send the second forward power and the second reflected power in digital signal form to the controller.

[0016] Optionally, the third processing module includes a third multiplier, a third low-pass filter, and a third operational amplifier module. The third multiplier is configured to square the forward power coupled voltage signal to obtain a fifth signal. The third low-pass filter is configured to filter the fifth signal to obtain a sixth signal. The third operational amplifier module is configured to obtain a third operational amplifier magnification factor and amplify the sixth signal according to the third operational amplifier magnification factor to obtain the second forward power.

[0017] Optionally, the third multiplier is further configured to square the reflected power coupled voltage signal to obtain a seventh signal. The third low-pass filter is configured to filter the seventh signal to obtain an eighth signal. The third operational amplifier module is configured to amplify the eighth signal according to the third operational amplifier magnification factor to obtain the second reflected power.

[0018] Optionally, the third processing module further includes a digital potentiometer. One end of the digital potentiometer is connected to the controller, and the other end of the digital potentiometer is connected to the third operational amplifier module. The digital potentiometer is configured to adjust the resistance value of the third operational amplifier module according to a control signal sent by the controller.

[0019] Optionally, the power combining and acquisition module includes a combining module and a power acquisition module. The combining module is configured to synthesize a radio frequency power signal according to the radio frequency signal and input the radio frequency power signal into the power acquisition module.

[0020] The power acquisition module is configured to input the radio frequency power signal to the load module, and detect the load impedance value and the reflection coefficient of the load module. When the load impedance value is not the preset impedance value and the reflection coefficient is not the preset value, a radio frequency current signal and a radio frequency input voltage signal are acquired from the radio frequency power signal and output to the signal processing module. When the load impedance value is not the preset impedance value and the reflection coefficient is the preset value, a forward power coupled voltage signal and a reflected power coupled voltage signal are acquired from the radio frequency power signal and output to the signal processing module.

[0021] Optionally, the power acquisition module includes a radio frequency main output line, a winding magnetic ring, a capacitive voltage division module, a first coupling line, a second coupling line, a grounding end, a first resistor, a second resistor, and a third resistor; the power acquisition module includes a first layer, a second layer, and a third layer;

[0022] The radio frequency main output line and the capacitive voltage division module are located in the first layer. The capacitive voltage division module is connected to the radio frequency main output line. The capacitive voltage division module is configured to acquire the radio frequency input voltage signal from the radio frequency power signal and output it to the signal processing module when the load impedance value is not the preset impedance value and the reflection coefficient is not the preset value;

[0023] The winding magnetic ring is nested on the radio frequency main output line. The winding magnetic ring is connected to the first resistor. The winding magnetic ring is configured to acquire the radio frequency current signal from the radio frequency power signal and output it to the signal processing module when the load impedance value is not the preset impedance value and the reflection coefficient is not the preset value;

[0024] The first coupling line and the second coupling line are located in the second layer. The first coupling line is connected to the second resistor. The first coupling line is configured to acquire the forward power coupled voltage signal from the radio frequency power signal and output it to the signal processing module when the load impedance value is not the preset impedance value and the reflection coefficient is the preset value;

[0025] The second coupling line is connected to the third resistor. The second coupling line is configured to acquire the reflected power coupled voltage signal from the radio frequency power signal and output it to the signal processing module when the load impedance value is not the preset impedance value and the reflection coefficient is the preset value;

[0026] The grounding end, the first resistor, the second resistor, and the third resistor are located in the third layer.

[0027] The present invention also discloses a radio frequency power supply, which includes the radio frequency signal control circuit and the DC power supply module as described above, and the DC power supply module is used to supply power to the power amplifier module, the signal processing module and the controller.

[0028] The present invention also discloses a semiconductor process equipment, which includes the radio frequency power supply, the matcher and the process chamber as described above, and the radio frequency power supply is used to provide radio frequency energy to the process chamber through the matcher.

[0029] The embodiments of the present invention have the following advantages:

[0030] The present invention discloses a radio frequency signal control circuit. In the present invention, the radio frequency signal is amplified by the power amplifier module, and the power characteristics of the radio frequency signal are monitored in real time by the synthesis and power acquisition module to generate an acquisition signal. The signal processing module accurately calculates the forward power and the reflected power according to the acquisition signal, and then the controller dynamically adjusts the supply voltage of the power amplifier module to ensure that the power amplifier module operates in the best working state, thereby improving the transmission efficiency and stability of the radio frequency signal, reducing the power loss and the reflection loss, and making the collected reflected power more accurate. Description of the Drawings

[0031] Figure 1 is a control block diagram of radio frequency power supply power acquisition in a related technology provided by an embodiment of the present invention;

[0032] Figure 2 is a block diagram of the structure of a power acquisition module in a related technology provided by an embodiment of the present invention;

[0033] Figure 3 is a block diagram of the structure of a radio frequency signal control circuit provided by an embodiment of the present invention;

[0034] Figure 4 is a block diagram of the structure of another radio frequency signal control circuit provided by an embodiment of the present invention;

[0035] Figure 5 is a block diagram of the structure of another radio frequency signal control circuit provided by an embodiment of the present invention;

[0036] Figure 6 is a top view block diagram of a power acquisition module provided by an embodiment of the present invention;

[0037] Figure 7 is a rear top view block diagram of a power acquisition module provided by an embodiment of the present invention after being flipped 180°;

[0038] Figure 8 is an axonometric view of the top view of a power acquisition module provided by an embodiment of the present invention;

[0039] Figure 9 It is an axonometric view of the back side of a power acquisition module provided by an embodiment of the present invention after being flipped 180°;

[0040] Figure 10 It is a stacked structure diagram of a power acquisition module provided by an embodiment of the present invention;

[0041] Figure 11 It is a structural block diagram of a radio frequency power supply provided by an embodiment of the present invention;

[0042] Figure 12 It is a structural block diagram of a semiconductor process equipment provided by an embodiment of the present invention. Specific embodiments

[0043] To make the above objects, features and advantages of the present invention more obvious and understandable, the present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments.

[0044] Refer to Figure 1 It shows a control block diagram of radio frequency power acquisition in a related technology provided by an embodiment of the present invention. Power is acquired through a power acquisition module. The acquired forward voltage wave and reflected voltage wave enter a multiplier for squaring; after low-pass filtering, the signal is converted into a DC signal. The DC signal is amplified by an operational amplifier and then sent to an ADC for conversion. The voltage U entering the ADC needs to be multiplied by the coupling multiple of the coupler and then divided by the multiplier coefficient and the operational amplifier amplification multiple to obtain the actual power value, that is, the analog quantity U value is subjected to ADC conversion, and finally enters the control system for calculation according to the power P calculation formula. Finally, the output of the power amplifier is adjusted by comparing the difference between the actual sampled power value and the set power value, so as to achieve the purpose of closed-loop power control.

[0045] As Figure 2 , it shows a structural block diagram of a power acquisition module in a related technology provided by an embodiment of the present invention. This structure is a centrally symmetric structure, where the port1 port is a radio frequency input port, port2 is a radio frequency output port, port3 is a forward power acquisition port, and port4 is a reflected power acquisition port. In this mode, the radio frequency main line and the coupling line need to be completely parallel to ensure the consistency of the forward power and the reflected power.

[0046] It can be seen that under this control method, since the collected power P is affected by the coupling coefficient a1 of the power collection module, the difference in the coupling coefficient of the reflected power collection end is very obvious under different load impedance conditions. When calibrating the reflected power, only one load state can be selected for calibration, that is, the reflected power calibration is carried out under the total reflection state. The known expression of the reflection coefficient is the ratio of the reflected voltage to the incident voltage: Γ = Vf / Vr, which is the case at the moment of total reflection. When Γ≈1, the reflected power collection under this control method is relatively accurate. In addition, due to the very good isolation of this collection scheme, Figure 2 the S-parameters between port 2 and port 3, and between port 1 and port 4 can reach -85 dB. That is, when the back-end load impedance is 50 Ω, the sampling value of the reflected power collection port is infinitely close to 0, and at this time, the reflected power collection is also relatively accurate. In summary, when the back-end load impedance is not 50 Ω and not close to 1, the reflected power collection by this method is inaccurate.

[0047] Generally, in order to adapt to more devices, the RF power supply will be provided with a load power control mode. In this mode: the forward output power of the power supply = the load power (set power) + the reflected power. At this time, the accuracy of the forward power output of the power supply depends on the detection accuracy of the reflected power. Using the existing control method, in the case of a certain reflection, the reflected power collection is not accurate.

[0048] To ensure the collected coupling amount and isolation degree, the RF main output line and the coupling line in the power collection module must be parallel, and the coupling length must be long enough, which results in a very large proportion of the space occupied by the power collection module, affecting the overall structure layout of the RF power supply and causing a decrease in the power density of the power supply.

[0049] One of the core concepts of the embodiments of the present invention is that the present invention amplifies the RF signal through the power amplifier module, and the synthesis and power collection module monitors the power characteristics of the RF signal in real time to generate a collection signal. The signal processing module can accurately determine the forward power and the reflected power according to the collection signal, and then the controller dynamically adjusts the supply voltage of the power amplifier module to ensure that the power amplifier module operates in the best working state, thereby improving the transmission efficiency and stability of the RF signal, reducing power loss, and making the collected reflected power more accurate.

[0050] Refer to Figure 3 , which shows a structural block diagram of a RF signal control circuit 10 provided by an embodiment of the present invention. The circuit includes:

[0051] A power amplifier module 101, configured to obtain an RF signal, amplify the RF signal, and output the amplified RF signal.

[0052] A synthesis and power collection module 102, connected to the power amplifier module 101, configured to receive the RF signal output by the power amplifier module and determine a collection signal according to the RF signal.

[0053] The signal processing module 103 is connected to the synthesis and power acquisition module 102, and is configured to receive the acquisition signal output by the synthesis and power acquisition module, and determine the forward power and the reflected power according to the acquisition signal.

[0054] The controller 104 is connected to the signal processing module, and is configured to receive the forward power and the reflected power input by the signal processing module, and generate a supply voltage for the power amplifier module according to the forward power and the reflected power.

[0055] The present invention discloses a radio frequency signal control circuit. In the present invention, the radio frequency signal is amplified by the power amplifier module, and the power characteristics of the radio frequency signal are monitored in real time by the synthesis and power acquisition module to generate an acquisition signal. The signal processing module can accurately determine the forward power and the reflected power according to the acquisition signal, and then the controller dynamically adjusts the supply voltage of the power amplifier module to ensure that the power amplifier module operates in the best working state, thereby improving the transmission efficiency and stability of the radio frequency signal, reducing power loss, extending the service life of the semiconductor device, and enhancing the reliability and performance of the circuit.

[0056] In an embodiment of the present invention, the synthesis and power acquisition module 102 is further connected to the load module 105. The synthesis and power acquisition module 102 is configured to synthesize a radio frequency power signal according to the radio frequency signal, input the radio frequency power signal to the load module, and detect the load impedance value and the reflection coefficient of the load module 105. When the load impedance value is not the preset impedance value and the reflection coefficient is not the preset value, a radio frequency current signal and a radio frequency input voltage signal are acquired from the radio frequency power signal, and the radio frequency current signal and the radio frequency input voltage signal are output as the acquisition signal; when the load impedance value is not the preset impedance value and the reflection coefficient is the preset value, a forward power coupled voltage signal and a reflected power coupled voltage signal are acquired from the radio frequency power signal, and the forward power coupled voltage signal and the reflected power coupled voltage signal are output as the acquisition signal.

[0057] In an embodiment of the present invention, the synthesis and power acquisition module 102 can synthesize a radio frequency power signal according to the radio frequency signal, and then input the radio frequency power signal to the load module 105, and can further monitor the load impedance value and the reflection coefficient of the load module 105. If the load impedance value is not the preset impedance value and the reflection coefficient is not the preset value, a radio frequency current signal and a radio frequency input voltage signal are acquired from the radio frequency power signal, and the radio frequency current signal and the radio frequency input voltage signal are output as the acquisition signal; if the load impedance value is not the preset impedance value and the reflection coefficient is the preset value, a forward power coupled voltage signal and a reflected power coupled voltage signal are acquired from the radio frequency power signal, and the forward power coupled voltage signal and the reflected power coupled voltage signal are output as the acquisition signal.

[0058] It should be noted that the preset impedance value and the preset impedance coefficient can be set according to user requirements and are not limited herein.

[0059] In an embodiment of the present invention, the signal processing module 103 is further configured to receive the radio frequency current signal and the radio frequency input voltage signal output by the synthesis and power acquisition module 102, or receive the forward power coupling voltage signal and the reflected power coupling voltage signal output by the synthesis and power acquisition module, determine the forward power and the reflected power according to the radio frequency current signal and the radio frequency input voltage signal, or determine the forward power and the reflected power according to the forward power coupling voltage signal and the reflected power coupling voltage signal; and output the forward power and the reflected power.

[0060] In the embodiment of the present invention, when the signal processing module 103 receives the radio frequency current signal and the radio frequency input voltage signal output by the synthesis and power acquisition module 102, it can determine the forward power and the reflected power based on the radio frequency current signal and the radio frequency input voltage signal. When the signal processing module 103 receives the forward power coupling voltage signal and the reflected power coupling voltage signal output by the synthesis and power acquisition module 102, it can determine the forward power and the reflected power according to the forward power coupling voltage signal and the reflected power coupling voltage signal, and further output the forward power and the reflected power. In the present invention, the radio frequency power supply can always ensure the accuracy of power sampling in any load impedance state, ensuring the accuracy of power output in any state.

[0061] In an embodiment of the present invention, the signal processing module includes a first processing module, a second processing module, and a first analog-to-digital conversion module. The first processing module is configured to determine a first forward power according to the radio frequency current signal and the radio frequency input voltage signal, and input the first forward power to the first analog-to-digital conversion module. The second processing module is configured to determine a first reflected power according to the radio frequency current signal and the radio frequency input voltage signal, and input the first reflected power to the analog-to-digital conversion module. The first analog-to-digital conversion module is configured to convert the first forward power and the first reflected power from analog signals into digital signals, and send the first forward power and the first reflected power in digital signal form to the controller.

[0062] In the embodiment of the present invention, as Figure 4 , a structural block diagram of another radio frequency signal control circuit provided by the embodiment of the present invention is shown. The signal processing module 103 of this circuit may include a first processing module 1031, a second processing module 1032, and a first analog-to-digital conversion module ADC. The first processing module 1031 can determine a first forward power u1″, and then input the first forward power u1″ to the ADC module for analog-to-digital conversion to obtain the first forward power in digital signal form; the second processing module 1032 can determine a first reflected power u2″, and then input the first reflected power u2″ to the ADC module for analog-to-digital conversion to obtain the first reflected power in digital signal form.

[0063] In an embodiment of the present invention, the first processing module includes an adder circuit, a first multiplier, a first low-pass filter, and a first operational amplifier module. The adder circuit is used to sum the radio frequency current signal and the radio frequency input voltage signal to obtain a first voltage signal. The first multiplier is used to square the first voltage signal to obtain a first signal. The first low-pass filter is used to filter the first signal to obtain a second signal. The first operational amplifier module is used to obtain a first operational amplifier multiple and amplify the second signal according to the first operational amplifier multiple to obtain a first forward power.

[0064] In the embodiment of the present invention, as Figure 4 , the first processing module 1031 may include an adder circuit 10311, a first multiplier 10312, a first low-pass filter 10313, and a first operational amplifier module 10314. The adder circuit is used to sum the radio frequency current signal and the radio frequency input voltage signal to obtain a first voltage signal, as shown in formula (1):

[0065] u1′ = (1 + Γ)Asin(ωt) + (1 - Γ)Asin(ωt) = 2Asin(ωt) Formula (1)

[0066] Among them, u1′ refers to the first voltage signal, and Γ refers to the reflection coefficient.

[0067] The first multiplier is used to square the first voltage signal to obtain a first signal. The first low-pass filter is used to filter the first signal to obtain a second signal. The first operational amplifier module is used to obtain a first operational amplifier multiple and amplify the second signal according to the first operational amplifier multiple to obtain a first forward power. Specifically, as shown in formula (2):

[0068]

[0069] Among them, u1″ is the first forward power, a2 is the multiplier coefficient, a3 is the operational amplifier amplification multiple, a4 is the sampling circuit coefficient, and the integral symbol is the low-pass filter operation.

[0070] In an embodiment of the present invention, the second processing module includes a subtraction circuit, a second multiplier, a second low-pass filter, and a second operational amplifier module.

[0071] The subtraction circuit is used to subtract the radio frequency current signal and the radio frequency input voltage signal to obtain a second voltage signal. The second multiplier is used to square the second voltage signal to obtain a third signal. The second low-pass filter is used to filter the third signal to obtain a fourth signal. The second operational amplifier module is used to obtain a second operational amplifier multiple and amplify the fourth signal according to the second operational amplifier multiple to obtain a first reflected power.

[0072] In the embodiment of the present invention, asFigure 4 , the second processing module 1032 includes a subtraction circuit 10321, a second multiplier 10322, a second low-pass filter 10323, and a second operational amplifier module 10324. The subtraction circuit 10321 is configured to obtain a second voltage signal by taking the difference between the radio frequency current signal and the radio frequency input voltage signal, as shown in formula (3):

[0073] u2′ = (1 + Γ)Asin(ωt) - (1 - Γ)Asin(ωt) = 2ΓAsin(ωt) Formula (3)

[0074] where, u2′ refers to the second voltage signal, and Γ refers to the reflection coefficient.

[0075] After the first voltage signal is calculated, the second multiplier is used to square the second voltage signal to obtain a third signal, the second low-pass filter is used to filter the third signal to obtain a fourth signal, and the second operational amplifier module is used to obtain the second operational amplifier multiple. The first reflected power is obtained by amplifying the fourth signal according to the second operational amplifier multiple, as shown in formula (4):

[0076]

[0077] where, u2″ is the first reflected power, a2 is the multiplier coefficient, a3 is the operational amplifier amplification multiple, a4 is the sampling circuit coefficient, and the integral symbol is the low-pass filter operation. It can be seen that a2, a3, and a4 are constant values under this control method, and these coefficients are not affected by the state of the backend load. Therefore, this sampling method is more accurate for sampling the forward power and reflected power when the impedance is not 50Ω and not close to 1, and the power control is also more precise.

[0078] In an embodiment of the present invention, the signal processing module further includes a third processing module 1033 and a second analog-to-digital conversion module ADC. The third processing module is configured to determine the second forward power and the second reflected power according to the forward power coupled voltage signal and the reflected power coupled voltage signal, and send the second forward power and the second reflected power to the second analog-to-digital conversion module. The second analog-to-digital conversion module is configured to convert the second forward power and the second reflected power from analog signals into digital signals, and send the second forward power and the second reflected power in digital signal form to the controller.

[0079] In an embodiment of the present invention, the third processing module includes a third multiplier, a third low-pass filter, and a third operational amplifier module. The third multiplier is configured to square the forward power coupled voltage signal to obtain a fifth signal, the third low-pass filter is configured to filter the fifth signal to obtain a sixth signal, and the third operational amplifier module is configured to obtain the third operational amplifier multiple and amplify the sixth signal according to the third operational amplifier multiple to obtain the second forward power.

[0080] In the embodiments of the present invention, as Figure 4 , the third processing module 1033 includes a third multiplier 10331, a third low-pass filter 10332, and a third operational amplifier module 10333. The third multiplier 10331 can square the forward power coupling voltage signal to obtain a fifth signal. The third low-pass filter 10332 can filter the fifth signal to obtain a sixth signal. 10333 can obtain the third operational amplifier multiple and amplify the sixth signal according to the third operational amplifier multiple to obtain the second forward power.

[0081] In an embodiment of the present invention, the third multiplier is further configured to square the reflected power coupling voltage signal to obtain a seventh signal. The third low-pass filter is configured to filter the seventh signal to obtain an eighth signal. The third operational amplifier module is configured to amplify the eighth signal according to the third operational amplifier multiple to obtain the second reflected power.

[0082] In the embodiments of the present invention, the third multiplier 10331 can also square the reflected power coupling voltage signal to obtain a seventh signal. The third low-pass filter 10332 can also filter the seventh signal to obtain an eighth signal. The third operational amplifier module 10333 can also amplify the eighth signal according to the third operational amplifier multiple to obtain the second reflected power.

[0083] In an embodiment of the present invention, the third processing module further includes a digital potentiometer. One end of the digital potentiometer is connected to the controller, and the other end of the digital potentiometer is connected to the third operational amplifier module. The digital potentiometer is configured to adjust the resistance value of the third operational amplifier module according to the control signal sent by the controller.

[0084] In the embodiments of the present invention, as Figure 4 , the third processing module 1033 may further include a digital potentiometer 10334. The digital potentiometer 10334 can adjust the resistance value of the digital potentiometer according to the control signal sent by the controller, so as to adjust the amplification multiple of the third operational amplifier module. The digital potentiometer usually consists of a resistor array and a control interface. The control interface can be I2C, SPI or other digital communication protocols. By sending specific digital commands, the position of the sliding end in the resistor array can be changed, thereby changing the resistance value.

[0085] In an embodiment of the present invention, the power combining and acquisition module includes a combining module and a power acquisition module. The combining module is configured to synthesize a radio frequency power signal according to a radio frequency signal and input the radio frequency power signal to the power acquisition module;

[0086] The power acquisition module is used to input a radio frequency power signal to the load module, and detect the load impedance value and reflection coefficient of the load module. When the load impedance value is not the preset impedance value and the reflection coefficient is not the preset value, a radio frequency current signal and a radio frequency input voltage signal are acquired from the radio frequency power signal and output to the signal processing module. When the load impedance value is not the preset impedance value and the reflection coefficient is the preset value, a forward power coupled voltage signal and a reflected power coupled voltage signal are acquired from the radio frequency power signal and output to the signal processing module.

[0087] In the embodiment of the present invention, as Figure 5 , a structural block diagram of another radio frequency signal control circuit provided by the embodiment of the present invention is shown. The power synthesis and acquisition module 102 includes a synthesis module 1021 and a power acquisition module 1022. The synthesis module 1021 is used to synthesize a radio frequency power signal according to the radio frequency signal and input the radio frequency power signal to the power acquisition module.

[0088] The power acquisition module 1022 can input a radio frequency power signal to the load module, and detect the load impedance value and reflection coefficient of the load module. When the load impedance value is not the preset impedance value and the reflection coefficient is not the preset value, a radio frequency current signal and a radio frequency input voltage signal are acquired from the radio frequency power signal and output to the signal processing module. When the load impedance value is not the preset impedance value and the reflection coefficient is the preset value, a forward power coupled voltage signal and a reflected power coupled voltage signal are acquired from the radio frequency power signal and output to the signal processing module.

[0089] In an embodiment of the present invention, the power acquisition module includes a radio frequency main output line, a winding magnetic ring, a capacitor voltage division module, a first coupling line, a second coupling line, a grounding end, a first resistor, a second resistor, and a third resistor; the power acquisition module includes a first layer, a second layer, and a third layer. The following first layer, second layer, and third layer are all Figure 10The middle copper-clad layer; the RF main output line and the capacitive voltage division module are located on the first layer. The capacitive voltage division module is connected to the RF main output line. The capacitive voltage division module is used to collect an RF input voltage signal from the RF power signal and output it to the signal processing module when the load impedance value is not the preset impedance value and the reflection coefficient is not the preset value; the wound magnetic core is nested on the RF main output line, and the wound magnetic core is connected to the first resistor. The wound magnetic core is used to collect an RF current signal from the RF power signal and output it to the signal processing module when the load impedance value is not the preset impedance value and the reflection coefficient is not the preset value; the first coupling line and the second coupling line are located on the second layer. The first coupling line is connected to the second resistor. The first coupling line is used to collect a forward power coupling voltage signal from the RF power signal and output it to the signal processing module when the load impedance value is not the preset impedance value and the reflection coefficient is the preset value; the second coupling line is connected to the third resistor. The second coupling line is used to collect a reflected power coupling voltage signal from the RF power signal and output it to the signal processing module when the load impedance value is not the preset impedance value and the reflection coefficient is the preset value; the grounding end, the first resistor, the second resistor, and the third resistor are located on the third layer.

[0090] In the embodiment of the present invention, the load impedance value and the reflection coefficient of the load module can be detected through the synthesis and power acquisition module, so that the required signal acquisition method can be determined according to the load impedance value and the reflection coefficient of the load module, and the forward power and the reflected power can be determined according to the RF signals acquired under different impedance states. Then, the magnitude of the supply voltage input to the power amplifier module is adjusted according to the forward power and the reflected power, ensuring more accurate power acquisition and higher power control accuracy of the RF power supply in different power modes, enabling the RF power supply to always ensure the accuracy of power sampling in any load impedance state and ensuring the accuracy of power output in any state.

[0091] Since the above-mentioned forward power and reflected power are both small-signal acquisition values containing power information, for the convenience of description, the forward power acquisition value and the reflected power acquisition value are respectively written as forward power and reflected power.

[0092] As Figure 6 shows a top-view structural block diagram of a power acquisition module 1022 provided by an embodiment of the present invention. The wound magnetic core 10222, the capacitive voltage division module 10223, and the first resistor 10227 together form the front-end voltage signal acquisition part. Among them, the capacitive voltage division module 10223 is connected to the RF main output line 10221 as the capacitive voltage division acquisition part, and the wound magnetic core 10222 is connected to the first resistor 10227 as the transformer mutual inductance acquisition part. The overall function of this part is to collect voltages u1 and u2, and this voltage signal is sent to Figure 6 the signal processing module.

[0093] As Figure 7Shows a 180°-flipped back top view structural block diagram of a power collection module 1022 provided by an embodiment of the present invention. The first coupling line 10224, the second coupling line 10225, the second resistor 10228, and the third resistor 10229 are the back-end coupled signal collection part, where the first coupling line 10224 is the reflected power collection part and the second coupling line 10225 is the forward power collection part; one end of the first coupling line 10224 is connected to the second resistor 10228 and outputs a voltage u4; one end of the second coupling line 10225 is connected to the third resistor 10229 and outputs a voltage u3. The second resistor 10228 and the third resistor 10229 are used to adjust the coupling degree and isolation degree of this part; the voltages u3 and u4 collected by this part are sent to Figure 6 the signal processing module. The power collection module in the embodiment of the present invention adopts a non-parallel and different-layer collection structure, effectively reducing the space occupancy rate of the power collection module.

[0094] As Figure 8 shows an axonometric view of the top view of a power collection module 1022 provided by an embodiment of the present invention. As Figure 9 shows an axonometric view of the 180°-flipped back top view of a power collection module 1022 provided by an embodiment of the present invention.

[0095] As Figure 10, which shows a stacked structure diagram of a power acquisition module 1022 provided by an embodiment of the present invention. The dielectric layer of this module selects ROGERS4350B board material, with a single dielectric layer thickness of 0.508 mm. The double dielectric layers are crimped using 4450F material. The dielectric constant of ROGERS4350B hardly changes with temperature. The dielectric constant of the board is a key factor affecting the sampling accuracy. In the case of high-power RF output, this board has higher stability and is more suitable for use in RF power acquisition systems compared to other boards. To ensure the coupling degree between the RF main output line 10221 and the first coupling line 10224 and the second coupling line 10225, the main line and the coupling line are designed as a different-layer structure; at this time, the power acquisition module 1022 needs to be a multi-layer structure. The following first layer, second layer, and third layer are all copper-clad layers. The first layer corresponds to copper-clad layer 1, the second layer corresponds to copper-clad layer 2, and the third layer corresponds to copper-clad layer 3; the RF main output line 10221 is located in the first layer, the first coupling line 10224 is located in the second layer, and the grounding copper-clad 10226 is located in the third layer; the capacitive voltage division module 10223 is located in the first layer; the first coupling line 10224 and the second coupling line 10225 are located in the second layer; the first resistor 10227, the second resistor 10228, and the third resistor 10229 are located in the third layer; the winding magnetic ring 10222 is a winding magnetic ring, which needs to be drilled on the power acquisition module 1022 and then nested on the power acquisition module 1022. Its installation position is near the RF in port of the RF main output line 10221, and the RF input signal needs to pass through the winding magnetic ring 10222 completely. The forward power and reflected power acquisition module of the present invention adopts a new type of non-parallel different-layer acquisition structure, effectively reducing the space occupancy rate of the power acquisition module.

[0096] As Figure 11 , which shows a structural block diagram of a RF power supply 20 provided by the present invention. The RF power supply 20 includes the above-mentioned RF signal control circuit 202 and the DC power supply module 201. The DC power supply module 201 is used to supply power to the power amplifier module, the signal processing module, and the controller.

[0097] As Figure 12 which shows a structural block diagram of a semiconductor process equipment provided by the present invention. The semiconductor process equipment includes the RF power supply S1, the matcher S3, and the process chamber S4 as described above. The RF power supply S1 is used to provide RF energy to the process chamber S4 through the matcher S3.

[0098] In the embodiment of the present invention, S1 is a radio frequency power supply, whose function is to generate radio frequency energy of 13.56 MHz or other frequencies. The rear end is connected to an automatic matcher S3 using a radio frequency cable S2 with a characteristic impedance of 50 Ω. The main function of S3 is to adjust its own impedance so that the impedance at the rear end of S2 is 50 Ω, ensuring that radio frequency energy enters the chamber to excite the plasma. The rear end of the automatic matcher is connected to the plasma chamber S4. During the start-up process of S4, the S1 radio frequency power supply needs to continuously and stably feed in a large enough radio frequency power. At this time, it is required that the radio frequency power acquisition module of the radio frequency power supply accurately acquires the forward power and reflected power. After the acquired signal is converted into a digital quantity by the ADC, it is transmitted to the rear-end controller through SPI. In the controller, the acquired power value is compared with the set value. If the set value is greater than the acquired value, the DC power supply of the power amplifier (PA) part is increased to increase the power output of the PA part. If the set value is less than the acquired value, the DC power supply of the PA part is decreased to reduce the power output of the PA part. If the set value is equal to the acquired value, the control loop reaches a stable state at this time, and the power is stably output. This radio frequency power supply has more accurate power acquisition and higher power control accuracy in different power modes, and can more accurately control the plasma state, which helps to improve the process uniformity and etching rate.

[0099] Each embodiment in this specification is described in a progressive manner. Each embodiment focuses on the differences from other embodiments. For the same and similar parts among the embodiments, reference can be made to each other.

[0100] Those skilled in the art should understand that the embodiments of the present invention can be provided as methods, devices, or computer program products. Therefore, the embodiments of the present invention can take the form of a complete hardware embodiment, a complete software embodiment, or an embodiment combining software and hardware aspects. Moreover, the embodiments of the present invention can take the form of a computer program product implemented on one or more computer-usable storage media (including but not limited to disk storage, CD-ROM, optical storage, etc.) containing computer-usable program code.

[0101] The embodiments of the present invention are described with reference to the flowcharts and / or block diagrams of methods, terminal devices (systems), and computer program products according to the embodiments of the present invention. It should be understood that each process and / or block in the flowchart and / or block diagram, as well as the combination of processes and / or blocks in the flowchart and / or block diagram, can be implemented by computer program instructions. These computer program instructions can be provided to the processor of a general-purpose computer, a special-purpose computer, an embedded processor, or other programmable data processing terminal devices to generate a machine, so that the instructions executed by the processor of the computer or other programmable data processing terminal devices generate a device for realizing the functions specified in one Figure 1 one process or multiple processes and / or blocks Figure 1 one block or multiple blocks.

[0102] These computer program instructions can also be stored in a computer-readable memory that can direct a computer or other programmable data processing terminal device to work in a specific manner, such that the instructions stored in the computer-readable memory produce a manufacture including an instruction device that implements the functions specified in one process or more processes and / or one block or more blocks in the process Figure 1 one process or more processes and / or Figure 1 the functions specified in one block or more blocks.

[0103] These computer program instructions can also be loaded onto a computer or other programmable data processing terminal device, such that a series of operation steps are performed on the computer or other programmable terminal device to produce a computer-implemented process, so that the instructions executed on the computer or other programmable terminal device provide steps for implementing the functions specified in one process or more processes and / or one block or more blocks in the process Figure 1 one process or more processes and / or Figure 1 the functions specified in one block or more blocks.

[0104] Although the preferred embodiments of the embodiments of the present invention have been described, those skilled in the art can make additional changes and modifications once they learn the basic creative concepts. Therefore, the appended claims are intended to be construed as including the preferred embodiments and all changes and modifications falling within the scope of the embodiments of the present invention.

[0105] Finally, it should also be noted that in this text, relational terms such as first and second are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the term "comprising", "including" or any other variant thereof is intended to cover non-exclusive inclusion, such that a process, method, article or terminal device comprising a series of elements not only includes those elements, but also includes other elements not expressly listed, or also includes elements inherent to such process, method, article or terminal device. Without further limitation, an element defined by the statement "comprising an..." does not exclude the presence of additional identical elements in the process, method, article or terminal device comprising the said element.

[0106] The above has introduced in detail a radio frequency signal control circuit, a radio frequency power supply, and a semiconductor process device provided by the present invention. Specific examples are used in this text to elaborate on the principle and implementation manner of the present invention. The description of the above embodiments is only used to help understand the method and its core idea of the present invention; at the same time, for those of ordinary skill in the art, according to the idea of the present invention, there will be changes in the specific implementation manner and application scope. In summary, the content of this specification should not be construed as a limitation to the present invention.

Claims

1. A radio frequency signal control circuit, characterized in that: include: A power amplifier module, used to obtain a radio frequency signal, amplify the radio frequency signal, and output the amplified radio frequency signal; A synthesis and power acquisition module, connected to the power amplifier module, for receiving the radio frequency signal output by the power amplifier module, and determining an acquisition signal according to the radio frequency signal; A signal processing module, connected to the synthesis and power acquisition module, used to receive the acquisition signal output by the synthesis and power signal, and determine the forward power and the reflected power according to the acquisition signal; The controller is connected to the signal processing module, and is used to receive the forward power and the reflected power output by the signal processing module, and generate a power supply voltage for the power amplifier module according to the forward power and the reflected power.

2. The circuit according to claim 1, characterized in that The synthesis and power acquisition module is also connected to the load module. The synthesis and power acquisition module is used to obtain an RF power signal according to the RF signal synthesis, input the RF power signal to the load module, and detect the load impedance value and reflection coefficient of the load module. When the load impedance value is not a preset impedance value and the reflection coefficient is not a preset value, an RF current signal and an RF input voltage signal are acquired from the RF power signal, and the RF current signal and the RF input voltage signal are output as the acquisition signal; when the load impedance value is not the preset impedance value and the reflection coefficient is the preset value, a forward power coupling voltage signal and a reflected power coupling voltage signal are acquired from the RF power signal, and the forward power coupling voltage signal and the reflected power coupling voltage signal are output as the acquisition signal.

3. The circuit according to claim 2, characterized in that The signal processing module is also used to receive the RF current signal and the RF input voltage signal output by the synthesis and power acquisition module, or to receive the forward power coupling voltage signal and the reflected power coupling voltage signal input by the synthesis and power acquisition module, and to determine the forward power and the reflected power according to the RF current signal and the RF input voltage signal, or to determine the forward power and the reflected power according to the forward power coupling voltage signal and the reflected power coupling voltage signal; and output the forward power and the reflected power.

4. The circuit according to claim 3, characterized in that The signal processing module includes a first processing module, a second processing module, and a first analog-to-digital conversion module. The first processing module is used to determine a first forward power according to the RF current signal and the RF input voltage signal, and input the first forward power to the first analog-to-digital conversion module. The second processing module is used to determine a first reflected power according to the RF current signal and the RF input voltage signal, and input the first reflected power to the analog-to-digital conversion module. The first analog-to-digital conversion module is used to convert the first forward power and the first reflected power from analog signals to digital signals, and send the first forward power and the first reflected power in the form of digital signals to the controller.

5. The circuit according to claim 4, characterized in that The first processing module includes an adding circuit, a first multiplier, a first low-pass filter, and a first operational amplifier module. The adding circuit is used to obtain a first voltage signal by summing the RF current signal and the RF input voltage signal. The first multiplier is used to square the first voltage signal to obtain a first signal. The first low-pass filter is used to filter the first signal to obtain a second signal. The first operational amplifier module is used to obtain a first operational amplifier multiple, and amplify the second signal according to the first operational amplifier multiple to obtain the first forward power.

6. The circuit according to claim 4, characterized in that The second processing module includes a subtraction circuit, a second multiplier, a second low-pass filter, and a second operational amplifier module. The subtraction circuit is used to obtain a second voltage signal by subtracting the RF current signal and the RF input voltage signal, the second multiplier is used to square the second voltage signal to obtain a third signal, the second low-pass filter is used to filter the third signal to obtain a fourth signal, and the second operational amplifier module is used to obtain a second operational amplifier multiple, and the fourth signal is amplified according to the second operational amplifier multiple to obtain the first reflected power.

7. The circuit according to claim 1, characterized in that The signal processing module also includes a third processing module and a second analog-to-digital conversion module. The third processing module is used to determine the second forward power and the second reflected power according to the forward power coupling voltage signal and the reflected power coupling voltage signal, and send the second forward power and the second reflected power to the second analog-to-digital conversion module. The second analog-to-digital conversion module is used to convert the second forward power and the second reflected power from analog signals to digital signals, and send the second forward power and the second reflected power in the form of digital signals to the controller.

8. The circuit according to claim 7, characterized in that The third processing module includes a third multiplier, a third low-pass filter, and a third operational amplifier module. The third multiplier is used to perform a square calculation on the forward power coupling voltage signal to obtain a fifth signal. The third low-pass filter is used to filter the fifth signal to obtain a sixth signal. The third operational amplifier module is used to obtain a third operational amplifier multiple, and amplify the sixth signal according to the third operational amplifier multiple to obtain the second forward power.

9. The circuit according to claim 8, characterized in that The third multiplier is also used to perform a square calculation on the reflected power coupling voltage signal to obtain a seventh signal, the third low-pass filter is used to filter the seventh signal to obtain an eighth signal, and the third operational amplifier module is used to amplify the eighth signal according to the third operational amplifier multiple to obtain the second reflected power.

10. The circuit according to claim 8, characterized in that The third processing module also includes a digital potentiometer, one end of the digital potentiometer is connected to the controller, and the other end of the digital potentiometer is connected to the third operational amplifier module. The digital potentiometer is used to adjust the resistance value of the third operational amplifier module according to the control signal sent by the controller.

11. The circuit according to claim 2, characterized in that The power synthesis and acquisition module includes a synthesis module and a power acquisition module, wherein the synthesis module is used to synthesize the radio frequency signal to obtain a radio frequency power signal, and input the radio frequency power signal to the power acquisition module; The power acquisition module is used to input the RF power signal into the load module and detect the load impedance value and reflection coefficient of the load module. When the load impedance value is not a preset impedance value and the reflection coefficient is not a preset value, the RF current signal and the RF input voltage signal are acquired from the RF power signal and output to the signal processing module. When the load impedance value is not a preset impedance value and the reflection coefficient is the preset value, the forward power coupling voltage signal and the reflected power coupling voltage signal are acquired from the RF power signal and output to the signal processing module.

12. The circuit according to claim 11, characterized in that The power collection module includes a radio frequency main output line, a winding magnetic ring, a capacitor voltage divider module, a first coupling line, a second coupling line, a ground terminal, a first resistor, a second resistor, and a third resistor; the power collection module includes a first layer, a second layer, and a third layer; The RF main output line and the capacitive voltage divider module are located in the first layer, the capacitive voltage divider module is connected to the RF main output line, and the capacitive voltage divider module is used to collect the RF input voltage signal from the RF power signal and output it to the signal processing module when the load impedance value is not a preset impedance value and the reflection coefficient is not a preset value; The winding magnetic ring is nested in the RF main output line, the winding magnetic ring is connected to the first resistor, and the winding magnetic ring is used to collect the RF current signal from the RF power signal and output it to the signal processing module when the load impedance value is not a preset impedance value and the reflection coefficient is not a preset value; The first coupling line and the second coupling line are located in the second layer, the first coupling line is connected to the second resistor, and the first coupling line is used to collect the forward power coupling voltage signal from the RF power signal and output it to the signal processing module when the load impedance value is not a preset impedance value and the reflection coefficient is the preset value; The second coupling line is connected to the third resistor, and the second coupling line is used to collect the reflected power coupling voltage signal from the RF power signal and output it to the signal processing module when the load impedance value is not the preset impedance value and the reflection coefficient is the preset value; The ground terminal, the first resistor, the second resistor and the third resistor are located in the third layer.

13. A radio frequency power supply, characterized in that: The RF power supply includes the RF signal control circuit and a DC power supply module as described in any one of claims 1 to 12, and the DC power supply module is used to supply power to the power amplifier module, the signal processing module and the controller.

14. A semiconductor process equipment, characterized in that: The semiconductor process equipment comprises the radio frequency power supply, a matcher, and a process chamber as described in claim 13, wherein the radio frequency power supply is used to provide radio frequency energy to the process chamber through the matcher.

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