Multi-channel millimeter wave radio frequency transceiving front-end assembly

Abstract

The invention discloses a multichannel millimeter wave radio frequency transceiving front-end assembly, which belongs to the technical field of radio frequency communication and comprises an upper-layer cavity and a lower-layer cavity. The upper layer cavity comprises a transmitting link, a receiving link and a local oscillation generation module; the lower-layer cavity is provided with a power supply control module; the transmitting link and the receiving link are respectively connected with the local oscillation generation module; and the power supply control module and the upper-layer cavity carry out signal transmission through the low-frequency row glass insulator. The technical problems that a transceiving assembly does not cover all signal transmission links, a selected packaging chip is prone to introducing large parasitic parameters at high frequency, and the performance of a device is affected are solved.

Description

Technical Field

[0001] The present invention belongs to the technical field of radio frequency communication, and relates to a multi-channel millimeter-wave radio frequency transceiver front-end component. Background Art

[0002] With the rapid development of modern wireless communication technology, achieving high-speed and efficient data communication has become the goal pursued by the industry. In this context, the expansion of spectral efficiency and spectral bandwidth has become a key factor in improving the performance of communication systems. The millimeter-wave band, due to its rich spectral resources, is regarded as an important band to meet the needs of future ultra-high-speed wireless local area networks, especially showing great potential in terms of continuous channel bandwidth.

[0003] At the system architecture level, millimeter-wave communication systems have achieved spatial division multiplexing by introducing multiple-input multiple-output (MIMO) technology, thus significantly improving spectral efficiency. This technology not only optimizes the utilization of spectral resources, but also provides higher data transmission rates and stronger anti-interference capabilities for wireless communication systems.

[0004] However, in specific application scenarios such as airborne, missile-borne, and space-borne applications, communication systems face the severe challenge of limited space resources. Miniaturization, lightweight, and low power consumption have become the mainstream trends in the technological development of communication systems in these scenarios. With the continuous improvement of integration, the internal electromagnetic environment of the system has become increasingly complex, and the electromagnetic interference (EMI) problem has become more prominent, posing a serious threat to the stability and reliability of the system.

[0005] A wireless communication system generally consists of three parts: an antenna, a radio frequency transceiver component, and a baseband signal processing module. Among them, the radio frequency transceiver component, as the core part of the system, undertakes key functions such as signal filtering, amplification, and frequency conversion, and has a decisive impact on the reliability, stability, volume, and power consumption of the communication system.

[0006] In the prior art, some patent documents such as CN113472383A proposed a radio frequency front-end module and a 5G large-scale MIMO base station system. This system simplifies the transceiver channel design and uses a highly isolated chip package to avoid coupling. However, this system only designs some links in the radio frequency transceiver band, does not cover all signal transmission links, and the selected packaged chips are prone to introduce large parasitic parameters at high frequencies, affecting the performance of the devices.

[0007] Another patent document CN106603091A shows a millimeter-wave 16-channel transceiver frequency conversion channel component, which realizes high-density integration and has the advantages of small size, light weight, and strong environmental adaptability, improving the reliability and stability of the system in various environments. However, there is still room for improvement in the aspects of transceiver same-frequency and second-stage frequency conversion of this component, and the mutual interference of the transceiver link and the complexity of the circuit structure limit the further improvement of its performance. Summary of the Invention

[0008] The purpose of the present invention is to solve the technical problems in the prior art that the transceiver component does not cover all signal transmission links, and the selected packaged chip is prone to introduce large parasitic parameters at high frequencies, affecting the performance of the device, and to provide a multi-channel millimeter-wave radio frequency transceiver front-end component.

[0009] To achieve the above object, the present invention adopts the following technical solutions: The present invention provides a multi-channel millimeter-wave radio frequency transceiver front-end component, including an upper cavity and a lower cavity; the upper cavity includes a transmitting link, a receiving link, and a local oscillator generating module; the lower cavity is set as a power control module; The transmitting link and the receiving link are respectively connected to the local oscillator generating module; the power control module and the upper cavity perform signal transmission through a low-frequency row glass insulator.

[0010] Further, the transmitting link includes a Ka medium-power amplifier, an SIW filter, a Ka small-signal amplifier, a Ka filter, an up-conversion mixer, an intermediate-frequency filter, and a PI-type attenuator; The intermediate-frequency signal is sequentially processed by the PI-type attenuator and the intermediate-frequency filter and then mixed with the local oscillator signal provided by the local oscillator generating module to generate a radio-frequency signal, and the radio-frequency signal is sequentially processed by the Ka filter, the Ka small-signal amplifier, the SIW filter, and the Ka medium-power amplifier, and a signal meeting the requirements is output.

[0011] Further, the receiving link includes a K small-signal amplifier 1, a K filter 1, a K small-signal amplifier 2, a K filter 2, a down-conversion mixer, an intermediate-frequency amplifier, an intermediate-frequency programmable attenuator, an intermediate-frequency filter 2, and a PI-type attenuator 2; The received signal is sequentially processed by the K small-signal amplifier 1, the K filter 1, the K small-signal amplifier 2, the K filter 2, the down-conversion mixer, the intermediate-frequency amplifier, the intermediate-frequency programmable attenuator, the intermediate-frequency filter 2, and the PI-type attenuator 2, and the final received signal is output.

[0012] Further, the transmitting link, the receiving link, and the local oscillator generating module are arranged in the upper cavity in a way of grooving and embedding.

[0013] Furthermore, the local oscillator generation module includes a frequency generator, a frequency multiplier, a local oscillator filter 1, a power divider 1, a power divider 2, a local oscillator amplifier, and a local oscillator filter 2. The signal generated by the frequency generator is processed successively by the frequency multiplier, the local oscillator filter 1, the power divider 1, the power divider 2, the local oscillator amplifier, and the local oscillator filter 2, and finally outputs the local oscillator signal.

[0014] Furthermore, all devices of the RF transceiver front-end component adopt MMIC bare chips; the PCB adhesion structure is used between every two adjacent MMIC bare chips.

[0015] Furthermore, the MMIC bare chip and the PCB are connected by wire bonding.

[0016] Furthermore, the material of the PCB board is selected according to different signal frequencies.

[0017] Furthermore, the upper cavity is provided with an upper cover plate.

[0018] Furthermore, columns are provided on the upper cover plate along the PCB trace position; the width of the columns is the same as the width of the PCB, which is used to isolate the electromagnetic radiation between MMIC chips.

[0019] Compared with the prior art, the present invention has the following beneficial effects: The present invention discloses a multi-channel millimeter-wave RF transceiver front-end component. The transmitting link and the receiving link integrated in the upper cavity are respectively closely connected to the local oscillator generation module, ensuring the precise generation, modulation, amplification, and receiving processing of millimeter-wave signals. Integrating the transmitting, receiving, and local oscillator functions in the upper cavity and placing the power control module in the lower cavity realizes a clear division of functional modules. This modular design facilitates later system maintenance, fault troubleshooting, and technology upgrading, reduces maintenance costs, and improves the flexibility and scalability of the system. The separate design of the upper and lower cavities, combined with the application of low-frequency row glass insulators, effectively isolates the electromagnetic interference that may be generated by the power control module, ensuring the electromagnetic compatibility of the RF front-end component. At the same time, the layered structure is also beneficial to the heat dissipation design, promoting air circulation or using heat dissipation materials to effectively manage the heat generated during the operation of the component, ensuring long-term stable operation. The low-frequency row glass insulator, as the medium for signal transmission between the upper and lower cavities, not only maintains good electrical performance but also enhances the electrical safety of the system due to its insulation characteristics. In addition, this connection method is more stable than the traditional method, reducing the problem of connection loosening caused by vibration or environmental factors, thereby improving the reliability and stability of the entire system.

[0020] Furthermore, high-performance millimeter-wave components are used in both the transmitting link and the receiving link, such as Ka medium-power amplifiers, SIW filters, Ka low-signal amplifiers, etc. The careful selection of these components ensures the high-quality transmission and processing of signals. The introduction of components such as PI attenuators and intermediate-frequency filters effectively adjusts the amplitude and frequency characteristics of the signals, enabling the precise mixing of the intermediate-frequency signals and the local oscillator signals to generate radio-frequency signals that meet the requirements. The multi-stage amplification and filtering processing in the receiving link enhance the anti-interference ability and receiving sensitivity of the signals, ensuring the high quality of the finally received signals.

[0021] Furthermore, a PCB adhesion structure is adopted between every two adjacent MMIC bare chips. This design not only enhances the mechanical strength of the components but also helps reduce electromagnetic interference between the chips, improving the electromagnetic compatibility of the system. All devices use MMIC (monolithic microwave integrated circuit) bare chips. This choice significantly improves the performance of the components because MMIC bare chips have low loss, high stability, and good consistency, which can ensure the high-quality transmission and processing of radio-frequency signals. The MMIC bare chips and the PCB are connected by wire bonding. This connection method has high reliability and low resistance characteristics, which helps maintain signal integrity and reduce signal loss. The avoidance positions set at the bottom of the PCB contribute to heat dissipation. Through reasonable thermal design, it can ensure that the components maintain a stable temperature during long-term operation, thereby improving the reliability and service life of the system. The use of MMIC bare chips and optimized PCB design enables the components to achieve miniaturization and light weight while maintaining high performance. This not only reduces the overall cost of the system but also improves the portability and applicability of the system, providing flexible options for various application scenarios. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] To more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required for use in the embodiments will be briefly introduced below. It should be understood that the following drawings only show some embodiments of the present invention and should not be regarded as limiting the scope. For those of ordinary skill in the art, other related drawings can be obtained based on these drawings without creative efforts.

[0023] Figure 1 is the principle block diagram of the multi-channel radio frequency transceiver front-end component of the present invention; Figure 2 is the upper-layer structure schematic diagram of the multi-channel radio frequency transceiver front-end component of the present invention; Figure 3 is the lower-layer structure schematic diagram of the multi-channel radio frequency transceiver front-end component of the present invention; Figure 4 is the installation schematic diagram of the splicing of the MMIC bare chip and the PCB of the present invention; Figure 5It is a schematic diagram of the bare chip installation of the multi-channel RF transceiver front-end component of the present invention; Figure 6 It is a schematic diagram of the structural upper cover plate columns of the multi-channel RF transceiver front-end component of the present invention; Figure 7 It is a simulation result diagram of the spurious suppression and inter-channel isolation of the present invention; Figure 8 It is a layout diagram of the power control part of the multi-channel RF transceiver front-end component of the present invention.

[0024] Among them, 501 - dielectric plate; 502 - metal layer; 503 - gold wire; 504 - MMIC bare chip; 505 - molybdenum-copper alloy carrier plate; 506 - cavity; 801 - clock; 802 - MCU control circuit; 803 - power supply circuit; 804 - TYPE-C interface; 805 - external power interface. Detailed implementation manners

[0025] To make the objectives, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Apparently, the described embodiments are some but not all of the embodiments of the present invention. Usually, the components of the embodiments of the present invention described and marked in the accompanying drawings here can be arranged and designed in various different configurations.

[0026] Therefore, the following detailed description of the embodiments of the present invention provided in the accompanying drawings is not intended to limit the scope of the claimed present invention, but merely represents selected embodiments of the present invention. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without creative efforts shall fall within the protection scope of the present invention.

[0027] It should be noted that: similar reference numerals and letters denote similar items in the following drawings. Therefore, once an item is defined in one drawing, it does not need to be further defined and explained in subsequent drawings.

[0028] In the description of the embodiments of the present invention, it should be noted that if terms such as "upper", "lower", "horizontal", "inner", etc. are used to indicate the orientation or positional relationship, it is based on the orientation or positional relationship shown in the accompanying drawings, or the orientation or positional relationship when the product of the present invention is normally placed. It is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus cannot be construed as a limitation of the present invention. In addition, terms such as "first", "second", etc. are only used for descriptive distinction and cannot be construed as indicating or implying relative importance.

[0029] In addition, when the term "horizontal" appears, it does not mean that the component is required to be absolutely horizontal, but it can be slightly inclined. For example, "horizontal" only means that its direction is more horizontal relative to "vertical", and it does not mean that the structure must be completely horizontal, but it can be slightly inclined.

[0030] In the description of the embodiments of the present invention, it should also be noted that unless otherwise clearly specified and limited, when the terms "arranged", "installed", "connected", "linked" appear, they should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be directly connected or indirectly connected through an intermediate medium, and it can be the communication inside two components. For those of ordinary skill in the art, the specific meanings of the above terms in the present invention can be understood according to specific situations.

[0031] The present invention will be further described in detail below with reference to the accompanying drawings: See Figure 1 , the present invention provides a multi-channel radio frequency transceiver front-end component, which has 4×4 different-frequency transceiver channels. The transmitted radio frequency is in the Ka band of 28.5 GHz to 30.5 GHz, the received radio frequency is in the K band of 18.5 GHz to 20.5 GHz, the intermediate frequency of transmission is 4 GHz, the intermediate frequency of reception is 3.5 GHz, and the intermediate frequency output is obtained after one-time frequency conversion of the transceiver link.

[0032] The Ka / K different-frequency transceiver component is divided into upper and lower layers as a whole. The upper-layer cavity installs the transceiver link, such as Figure 2 , and the lower-layer cavity installs the power control part, such as Figure 3 . The electrical and control signals are transmitted between the upper and lower layer cavities through low-frequency row glass insulators. The radio frequency ports are externally connected through wall-penetrating radio frequency 2.92K connectors, and the intermediate frequency ports are externally connected through 1st-generation IPEX to SMA cables.

[0033] The transceiver link includes a 4-channel Ka-band transmission link and a 4-channel K-band reception link. Each channel of the transmission link includes a Ka medium-power amplifier, a SIW filter, a Ka small-signal amplifier, a Ka filter, an up-conversion mixer, an intermediate frequency filter 1, and a PI-type attenuator 1. Each channel of the reception link includes a K small-signal amplifier 1, a K filter 1, a K small-signal amplifier 2, a K filter 2, a down-conversion mixer, an intermediate frequency amplifier, an intermediate frequency programmable attenuator, an intermediate frequency filter 2, and a PI-type attenuator 2. Each of the 4 transmission links and 4 reception links is equipped with a local oscillator generation module to provide local oscillator signals for the up-conversion of the transmission link and the down-conversion of the reception link. The local oscillator generation module includes a frequency generator, a frequency multiplier, a local oscillator filter 1, a power divider 1, a power divider 2, a local oscillator amplifier, and a local oscillator filter 2.

[0034] An electrical connection is made between the front and rear devices. In the transmitting link, the intermediate-frequency signal is input from the outside to the PI attenuator 1 through a first-generation IPEX-to-SMA cable. The PI attenuator 1 attenuates the signal by 3 dB in power to improve the standing wave at the input port and reduce the link loss of the input intermediate-frequency signal. After passing through the PI attenuator 1, the intermediate-frequency signal enters the intermediate-frequency filter 1, which filters out the out-of-band noise that may be introduced at the input port. The up-conversion mixer up-converts the 4-GHz intermediate-frequency signal and the local oscillator signal provided by the local oscillator generation module to generate a radio-frequency signal in the Ka band. The radio-frequency signal first enters the Ka filter to filter out the spurious interference that may be generated by the up-conversion mixer. The Ka low-signal amplifier provides signal gain in the Ka band for the transmitting radio-frequency signal. The SIW filter specifies that the frequency range of the transmitting radio-frequency signal is 28.5 GHz to 30.5 GHz in the Ka band and further suppresses the out-of-band of the transmitting signal. Then the transmitting radio-frequency signal enters the Ka medium-power amplifier to provide the final transmitting gain for the signal to ensure that the output signal power meets the index requirements. Finally, the transmitting radio-frequency signal is output externally through a radio-frequency 2.92K connector that penetrates the wall.

[0035] In the receiving link, the received radio-frequency signal is input to the K low-signal amplifier 1 through a radio-frequency 2.92K connector that penetrates the wall. The K low-signal amplifier 1 can amplify the gain of the radio-frequency signal in the K band. After passing through the K low-signal amplifier 1, the signal enters the K filter 1 to filter out the external interference signals that may be introduced and the harmonics generated by the K low-signal amplifier 1, and the K filter 1 specifies that the frequency range of the input radio-frequency signal is 18.5 GHz to 20.5 GHz in the K band. The K low-signal amplifier 2 further increases the power of the input radio-frequency signal. The K filter 2 further suppresses the out-of-band interference signals. After two amplifications and filtrations, the input radio-frequency signal enters the down-conversion mixer, where the radio-frequency signal and the local oscillator signal provided by the local oscillator generation module are down-converted to output an intermediate-frequency signal of 3.5 GHz. The intermediate-frequency amplifier first amplifies the generated intermediate-frequency signal for the last time to meet the index requirements. The intermediate-frequency programmable attenuator supports an attenuation range of 0 dB to 31.5 dB, provides gain control ability for the receiving link, prevents the receiving intermediate-frequency signal from being oversaturated, and improves the dynamic range of the receiving link. The intermediate-frequency signal passes through the intermediate-frequency filter 2, and the intermediate-frequency filter 2 suppresses the out-of-band spurious signals. Then the intermediate-frequency signal passes through the PI attenuator 2 to improve the standing wave at the output port. Finally, the intermediate-frequency signal is output externally through a first-generation IPEX-to-SMA cable.

[0036] In the local oscillator generation module, the frequency generator generates a local oscillator signal with a frequency that is one times the original frequency within the range of 10 GHz to 20 GHz; the local oscillator signal with a frequency that is one times the original frequency becomes a local oscillator signal with a frequency that is two times the original frequency after passing through a frequency multiplier; the local oscillator signal with a frequency that is two times the original frequency passes through the local oscillator filter 1 to filter out the possible noise introduced in the signal and the harmonics generated by the frequency multiplier; the power divider 1 and the power divider 2 divide the local oscillator signal with a frequency that is two times the original frequency into four paths and supply them to 4-way transmission or 4-way reception; the local oscillator amplifier amplifies the power of the divided local oscillator signal with a frequency that is two times the original frequency to meet the working requirements of the up-conversion mixer and the down-conversion mixer; finally, the local oscillator signal with a frequency that is two times the original frequency passes through the local oscillator filter 2 to filter out the spurious signals that may be introduced by the local oscillator amplifier and provide a local oscillator signal that is as pure as possible for the up-conversion mixer and the down-conversion mixer.

[0037] The multi-channel heterodyne transceiver component has the following advantages: (1) For the transmission and reception links of small signals, multiple-stage amplifiers are provided, with extremely high gain amplification capabilities; (2) For out-of-band rejection and noise, multiple-stage suppression and filtering are provided, ensuring the purity of the signal and improving the sensitivity of the receiver; (3) Ensuring the stability of the relative relationship between the local oscillator signal and the radio frequency signal, and ensuring the stability of the gain of the reception link; (4) 4 transmit and 4 receive greatly improve the capacity of the communication system and increase the system data transmission rate; (5) The transmission and reception frequencies use different signal frequency bands, avoiding signal interference between the transmission and reception channels and improving the stability and reliability of communication.

[0038] See Figure 4 and Figure 5 Referring to

[0039] The advantages of using the MMIC bare chip and PCB hybrid circuit design method are as follows: (1) In terms of high-frequency performance, due to the reduction of packaging materials and structures, the MMIC bare chip introduces fewer parasitic parameters in the GHz signal transmission field than traditional packaged chips, improving the quality and speed of signal transmission; (2) In terms of integration, the size of the MMIC bare chip is smaller, without the volume occupation of the packaging shell, reducing the length of the circuit design and the circuit transmission loss; (3) In terms of cost, although the method of splicing multiple PCBs increases the design difficulty, and traditional circuit designs often choose the same PCB material for different circuit designs, multiple PCBs can be spliced to flexibly select the appropriate PCB material according to the signal frequency, avoiding overkill and using high-frequency materials to transmit low-frequency signals.

[0040] Such as Figure 2 , the upper cavity is grooved according to the shape of the designed circuit, and the circuit is embedded in the groove. The width of the groove is 0.2 mm wider than the PCB shape, and the depth is 5 mm. For the signal routing position at the bottom of the PCB, a separate groove with a depth of 0.2 mm is dug for avoidance. The upper cover plate is provided with multiple protruding columns. The positions of the columns correspond to the PCB routing positions. The width of the columns is the same as the PCB width, and the height of the columns is 3.5 mm. Such as Figure 6 . After the upper cover plate is fitted with the cavity, the columns just form a cavity shield for the MMIC chips, effectively avoiding the electromagnetic radiation interference between the MMIC chips and ensuring the normal working performance of a single chip. By performing channel isolation and spurious simulation tests on the link, excellent performance results can be obtained. The isolation of the transmit channel reaches 300 dBc, the isolation of the receive channel reaches 110 dBc, the transmit spurious suppression reaches 75 dBc, and the receive spurious suppression reaches 130 dBc. Such as Figure 7 .

[0041] The power control part, such as Figure 8 , includes an external power interface 805, a TYPE-C interface 804, a power supply circuit 803, an MCU control circuit 802, and a clock 801. The MCU control circuit 802 controls the power supply circuit 803, the frequency generator, and the programmable attenuator according to external control instructions; the power supply circuit 803 enables the LDO power supply chip according to the control instructions of the MCU control circuit 802 to provide appropriate supply voltages for each chip in the transceiver link; the clock 801 provides a stable external reference clock for the frequency generator to ensure the correct output of the local oscillator signal.

[0042] The above are only the preferred embodiments of the present invention and are not intended to limit the present invention. For those skilled in the art, the present invention can have various changes and modifications. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principle of the present invention shall be included within the protection scope of the present invention.

Claims

1. A multi-channel millimeter wave radio frequency transceiver front-end component, characterized in that: It includes an upper cavity and a lower cavity; the upper cavity includes a transmitting link, a receiving link, and a local oscillator generating module; the lower cavity is configured as a power control module; The transmitting link and the receiving link are respectively connected to the local oscillator generating module; the power supply control module and the upper cavity transmit signals through low-frequency row glass insulators.

2. The multi-channel millimeter wave RF transceiver front-end component according to claim 1, characterized in that: The transmission chain includes a Ka medium power amplifier, a SIW filter, a Ka small signal amplifier, a Ka filter, an up-conversion mixer, an intermediate frequency filter and a PI type attenuator; The intermediate frequency signal is processed by the PI attenuator and the intermediate frequency filter in sequence and then mixed with the local oscillator signal provided by the local oscillator generating module to generate an RF signal. The RF signal is processed by the Ka filter, the Ka small signal amplifier, the SIW filter and the Ka intermediate power amplifier in sequence to output a signal that meets the requirements.

3. The multi-channel millimeter wave RF transceiver front-end component according to claim 1, characterized in that: The receiving link includes K small signal amplifier 1, K filter 1, K small signal amplifier 2, K filter 2, down-conversion mixer, intermediate frequency amplifier, intermediate frequency program-controlled attenuator, intermediate frequency filter 2 and PI type attenuator 2; The received signal is processed in sequence by K small signal amplifier 1, K filter 1, K small signal amplifier 2, K filter 2, down-conversion mixer, intermediate frequency amplifier, intermediate frequency programmable attenuator, intermediate frequency filter 2 and PI type attenuator 2 to output the final received signal.

4. The multi-channel millimeter wave RF transceiver front-end component according to claim 1, characterized in that: The transmitting link, receiving link and local oscillator generation module are arranged in the upper cavity by means of trenching and embedding.

5. The multi-channel millimeter wave RF transceiver front-end component according to claim 1, characterized in that: The local oscillator generation module includes a frequency generator, a frequency multiplier, a local oscillator filter 1, a power divider 1, a power divider 2, a local oscillator amplifier, and a local oscillator filter 2. The signal generated by the frequency generator is processed in sequence by a frequency multiplier, a local oscillator filter 1, a power divider 1, a power divider 2, a local oscillator amplifier and a local oscillator filter 2 to output a final local oscillator signal.

6. The multi-channel millimeter wave RF transceiver front-end component according to claim 1, characterized in that: All devices of the RF transceiver front-end assembly adopt MMIC bare chips; and there is a PCB bonding structure between every two adjacent MMIC bare chips.

7. The multi-channel millimeter wave RF transceiver front-end component according to claim 6, characterized in that: The MMIC bare chip and the PCB are connected by gold wire bonding.

8. The multi-channel millimeter wave RF transceiver front-end component according to claim 6, characterized in that: The material of the PCB board is selected according to different frequencies of the signal.

9. The multi-channel millimeter wave RF transceiver front-end component according to claim 6, characterized in that: The upper cavity is provided with an upper cover plate.

10. The multi-channel millimeter wave radio frequency transceiver front-end component according to claim 9, characterized in that: A column is arranged on the upper cover plate at the position where the PCB is routed; the width of the column is consistent with the width of the PCB and is used to isolate electromagnetic radiation between MMIC chips.

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