Preparation method of two-dimensional RexMo1-xS2 heterojunction photoelectric detector

Abstract

The invention relates to the field of novel two-dimensional materials and the field of photoelectric detection, and discloses a preparation method of a two-dimensional RexMo1-xS2 heterojunction photoelectric detector. The method comprises the following steps: growing two-dimensional RexMo (1-x) S2 of which the transverse size reaches a centimeter level through a low-pressure chemical vapor deposition (LPCVD) method; stripping the two-dimensional RexMo (1-x) S2 from the substrate by using a water-assisted transfer method; a mechanical stripping method is adopted to obtain two-dimensional GaSe; and transferring the two-dimensional GaSe and the two-dimensional RexMo (1-x) S2 to two metal electrodes in sequence to prepare the two-dimensional RexMo (1-x) S2 heterojunction photoelectric detector. The two-dimensional RexMo (1-x) S2 heterojunction photoelectric detector disclosed by the invention has the advantages of simple structure, high responsivity, large detection rate, high response speed and the like, and meanwhile, the large-size two-dimensional RexMo (1-x) S2 grown by LPCVD (Low Pressure Chemical Vapor Deposition) can be used for manufacturing the heterojunction photoelectric detector.

Description

Technical Field

[0001] The present invention relates to the fields of novel two-dimensional materials and photoelectric detection, and particularly relates to a method for preparing a two-dimensional Re x Mo 1-x S 2 heterojunction photodetector. Background Art

[0002] Photoelectric detectors are widely used in fields such as communication, medical treatment, environmental monitoring, industrial automation, and security monitoring. They can quickly respond to changes in external light, convert optical signals into electrical signals and transmit them to other devices to form waveforms or other forms of information. In recent years, photoelectric detectors are developing towards the trends of high sensitivity, high response speed, and simple structure. Two-dimensional transition metal dichalcogenides (2D TMDs) have unique layered structures, endowing them with physical properties such as high light absorption ability and high carrier mobility, making such novel two-dimensional materials have excellent optoelectronic properties. Growing novel 2D TMDs and using them to construct novel photoelectric detectors is considered the most effective method to effectively improve the comprehensive performance of photoelectric detectors.

[0003] In addition, constructing two-dimensional van der Waals heterojunctions is the main method to further improve the optoelectronic properties of 2D TMDs. Two-dimensional van der Waals heterojunctions integrate the excellent physical properties of the constituent materials. At the same time, an internal built-in electric field will be formed at the heterojunction interface to promote the separation and transport of carriers, which can effectively improve the comprehensive performance of photodetectors based on 2D TMDs and have great application potential in the field of photoelectric detection. For example, Hui Xue et al. reported in the article "A MoSe 2 / WSe 2 Heterojunction-Based Photodetector at Telecommunication Wavelengths" that a photodetector was prepared by building a MoSe 2 / WSe 2 heterojunction. Yajie Han reported in the article "Vertical heterojunction photodetector with self-powered broadband response and high performance" that a photodetector was prepared by building a Bi 2 Se 3 / a-Ga 2 O 3 / p-Si vertical heterojunction. However, in the currently reported two-dimensional material heterojunction photodetectors, since most of the two-dimensional materials used are obtained by mechanical exfoliation method, it is difficult to synthesize them in large areas, which limits their application in actual production.

[0004] In summary, synthesizing new two-dimensional TMDs with excellent performance and using them to construct heterojunction photodetectors are expected to obtain new photodetectors with excellent comprehensive performance, which have great application potential in the field of photodetection. Summary of the Invention

[0005] In view of the above problems, the present invention aims to provide a preparation method of a two-dimensional Re x Mo 1-x S 2 heterojunction photodetector. The low-pressure chemical vapor deposition (LPCVD) method is used to prepare large-area (the lateral size can reach the centimeter level) two-dimensional Re x Mo 1-x S 2 on a substrate, and a heterostructure is built with mechanically exfoliated two-dimensional GaSe to fabricate a photodetector. The fabricated photodetector has the advantages of high responsivity, large detectivity, and fast response speed.

[0006] The present invention adopts the following technical content: A two-dimensional Re x Mo 1-x S 2 heterojunction photodetector, including an insulating substrate, on which two symmetric metal electrodes are attached. The two metal electrodes are separated by a certain distance and do not contact each other. Two-dimensional GaSe is placed on the two metal electrodes so that both ends of the two-dimensional GaSe are electrically connected to the two metal electrodes respectively. Then, a layer of two-dimensional Re x Mo 1-x S 2 is covered on the two-dimensional GaSe, where x = 0 ～ 1, preferably 0.58; the two-dimensional Re x Mo 1-x S 2 and the two-dimensional GaSe form a van der Waals heterostructure.

[0007] Furthermore, the substrate has insulating properties and can mechanically support the device. A silicon wafer with a silicon dioxide insulating layer can be selected, and the thickness of the silicon dioxide insulating layer is 100 - 300 nm.

[0008] Furthermore, the two selected metal electrodes are gold electrodes, and the two metal electrodes are parallel to each other, with a spacing of 1 - 10 μm.

[0009] Furthermore, an adhesion metal layer, such as a chromium metal layer, is provided between the metal electrode and the insulating substrate.

[0010] Furthermore, the thickness of the two-dimensional GaSe is 1 - 200 nm, preferably 10 - 150 nm.

[0011] Further, two-dimensional GaSe is obtained by mechanical exfoliation.

[0012] Further, two-dimensional Re x Mo 1-x S 2 has a thickness of less than 10 nm, and the lateral dimension of Re x Mo 1-x S 2 can reach the centimeter scale, for example, with an area of 1 square centimeter.

[0013] Further, two-dimensional Re x Mo 1-x S 2 can also be obtained by methods such as chemical vapor deposition (LPCVD), liquid phase exfoliation, and magnetron sputtering.

[0014] Further, two-dimensional Re x Mo 1-x S 2 is grown by low-pressure chemical vapor deposition, including the following steps:

[0015] S1: Use a two-zone tube furnace to grow two-dimensional Re x Mo 1-x S 2 using sulfur powder as the sulfur source and placing it in the upstream temperature zone I of the tube furnace; using a uniformly mixed powder of rhenium trioxide and molybdenum trioxide as the rhenium and molybdenum sources and placing it in the downstream temperature zone II of the tube furnace;

[0016] S2: Use fluorophlogopite as the substrate to grow two-dimensional Re x Mo 1-x S 2 and place it 1 - 10 cm downstream of the rhenium and molybdenum sources in the constant temperature zone II;

[0017] S3: Use a vacuum pump to pump the pressure inside the tube to 1×10 -2 ~5×10 -1 torr and wait for the pressure to stabilize;

[0018] S4: Open the upstream inlet valve and introduce high-purity argon (99.999%) with a flow rate of 20 - 300 sccm;

[0019] S5: Raise the temperature of the constant temperature zone I to 120 - 300 °C and the temperature of the constant temperature zone II to 600 - 850 °C; the growth process lasts for 5 - 50 minutes. After the growth is completed, the sample is cooled to room temperature with the furnace, and the two-dimensional Re x Mo 1-x S 2 sample is taken out.

[0020] Further, the mass ratio of sulfur powder, rhenium trioxide powder, and molybdenum trioxide powder is 0.5-5 g: 0.5-3 mg: 0.5-3 mg. For example, the mass of sulfur powder is 0.5-5 g, the mass of rhenium trioxide powder is 0.5-3 mg, and the mass of molybdenum trioxide powder is 0.5-3 mg.

[0021] Further, a water-assisted method can be used to exfoliate two-dimensional Re x Mo 1-x S 2 from the fluorophlogopite substrate, realizing the separation between two-dimensional Re x Mo 1-x S 2 and the growth substrate fluorophlogopite. Specifically, take a clean petri dish (or other container) and inject deionized water; place the sample obtained in step S5, which has two-dimensional Re x Mo 1-x S 2 on one side facing up and press it into the deionized water. Two-dimensional Re x Mo 1-x S 2 will float on the surface of the deionized water, realizing the water-assisted exfoliation of two-dimensional Re x Mo 1-x S 2 from the fluorophlogopite substrate.

[0022] Further, take mechanically exfoliated GaSe and controllably transfer it to two gold electrodes through a transfer stage. Both ends of GaSe are electrically connected to the two gold electrodes respectively.

[0023] Further, use the PDMS controllable transfer technology to place two-dimensional GaSe and two-dimensional Re x Mo 1-x S 2 at the target position. Specifically, dip PMMA into the two-dimensional Re x Mo 1-x S 2 floating on the water surface, and controllably transfer two-dimensional Re x Mo 1-x S 2 to the surface of two-dimensional GaSe to form a two-dimensional Re x Mo 1-x S 2 heterojunction photodetector.

[0024] Optionally, in step S1, ammonium perrhenate can also be used to replace rhenium trioxide powder as the rhenium source.

[0025] Optionally, the fabricated two-dimensional Re x Mo 1-x S 2Heterojunction photodetector, perform drying treatment, complete two-dimensional Re x Mo 1-x S 2 Preparation of the heterojunction photodetector.

[0026] The constant temperature zone I, which is the sulfur powder evaporation zone, within the range of 120 - 300 °C, the evaporation rate of sulfur powder is moderate. When the temperature is lower than 120 °C, due to the low temperature, the evaporation rate of sulfur powder is too slow to provide a sulfur-rich environment required for the growth of two-dimensional Re x Mo 1-x S 2 ; when the temperature is higher than 300 °C, the evaporation rate of sulfur powder is too fast, and a large amount of sulfur vapor generated in a short time will sulfide the surfaces of rhenium trioxide and molybdenum trioxide to form rhenium disulfide and molybdenum disulfide, inhibiting the evaporation of rhenium trioxide and molybdenum trioxide, which is not conducive to the continuous growth of two-dimensional Re x Mo 1-x S 2 .

[0027] The constant temperature zone II, which is the evaporation zone of rhenium and molybdenum sources and the growth zone of two-dimensional Re x Mo 1-x S 2 , at 600 - 850 °C, is the optimal growth temperature for Re x Mo 1-x S 2 . When the temperature is lower than 600 °C, the evaporation of rhenium trioxide and molybdenum trioxide is slow, and the growth temperature is too low for two-dimensional Re x Mo 1-x S 2 to grow; when the temperature is higher than 800 °C, the evaporation of rhenium and molybdenum sources is too fast to grow a large area of two-dimensional Re x Mo 1-x S 2 .

[0028] In summary, the present invention has the following beneficial effects:

[0029] The present invention uses two-dimensional Re x Mo 1-x S 2 to build a heterojunction with mechanically exfoliated GaSe to prepare a photodetector. Re x Mo 1-x S 2 is grown by low-pressure chemical vapor deposition, rhenium trioxide, molybdenum trioxide and sulfur powder are used as rhenium source, molybdenum source and sulfur source respectively, fluorophlogopite is used as the growth substrate; GaSe is obtained by mechanical exfoliation; the two materials are transferred to two gold electrodes in sequence, and the distance between the two gold electrodes is 1 - 10 μm, and Re x Mo 1-x S 2 / GaSe heterojunction can be used to obtain a photodetector. The obtained photodetector has the advantages of simple structure, high responsivity, large detectivity, and fast response speed. At the same time, it demonstrates the large-size two-dimensional Re grown by LPCVD x Mo 1-x S 2 which can be used to fabricate heterojunction photodetectors.

[0030] Compared with the existing reports, the LPCVD used in the present invention can obtain a new type of two-dimensional Re with a lateral size reaching the centimeter scale x Mo 1-x S 2 , and a new type of heterojunction photodetector is constructed using this new material. The device has the advantages of simple structure, high responsivity, large detectivity, and fast response speed, and has good application prospects in the field of photodetection. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] Figure 1 is a schematic structural diagram of the heterojunction photodetector fabricated in Example 1;

[0032] In the figure: 1, insulating substrate; 2, metal electrode; 3, two-dimensional GaSe; 4, two-dimensional Re x Mo 1-x S 2 .

[0033] Figure 2 is a schematic diagram of the experimental apparatus for preparing Re x Mo 1-x S 2 by the LPCVD method in Example 1;

[0034] Figure 3 is a comparison diagram of water-assisted transfer of Re x Mo 1-x S 2 and clean mica in Example 1;

[0035] Figure 4 is the energy-dispersive X-ray spectrum and the atomic percentages of various elements contained in the Re x Mo 1-x S 2 grown in Example 1;

[0036] Figure 5 is the atomic force microscope image of the Re x Mo 1-x S 2 grown in Example 1;

[0037] Figure 6 is the Re x Mo 1-x S2 High-magnification transmission electron microscope image (upper left), selected area electron diffraction image (upper right), and low-magnification transmission electron microscope image (lower)

[0038] Figure 7 Detection result of the heterojunction photodetector made in Example 1 for 450 nm incident light with a periodic switch

[0039] Figure 8 For Re made in Comparative Example 1 x Mo 1-x S 2 Detection result of the ReMoS photodetector for 450 nm incident light with a periodic switch

[0040] Figure 9 Detection result of the GaSe photodetector made in Comparative Example 2 for 450 nm incident light with a periodic switch Detailed implementation manners

[0041] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are some, but not all, of the embodiments of the present invention. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without creative efforts shall fall within the protection scope of the present invention.

[0042] Example 1

[0043] Referring to Figure 1 , a two-dimensional ReMoS (x = 0.58) heterojunction photodetector, including an insulating substrate (1), two symmetric metal electrodes (2) are attached to the insulating substrate (1), the two metal electrodes (2) are separated by a certain distance and do not contact each other, a two-dimensional GaSe (3) is placed on the two metal electrodes (2) so that both ends of the two-dimensional GaSe (3) are electrically connected to the two metal electrodes respectively, and a layer of two-dimensional ReMoS (4) is further covered on the two-dimensional GaSe (3); two-dimensional ReMoS x Mo 1-x S 2 (x = 0.58) heterojunction photodetector, comprising an insulating substrate (1), on which two symmetric metal electrodes (2) are attached, the two metal electrodes (2) are separated by a distance and do not contact each other, a two-dimensional GaSe (3) is placed on the two metal electrodes (2) such that both ends of the two-dimensional GaSe (3) are electrically connected to the two metal electrodes respectively, and a layer of two-dimensional ReMoS is further covered on the two-dimensional GaSe (3); two-dimensional ReMoS x Mo 1-x S 2 (4); two-dimensional ReMoS x Mo 1-x S 2(4) forms a van der Waals heterostructure with two-dimensional GaSe(3). The insulating substrate (1) is a single-crystalline silicon wafer with a silicon dioxide insulating layer, and the thickness of the silicon dioxide insulating layer is 300 nm. The two selected metal electrodes (2) are gold electrodes. The two metal electrodes (2) are kept parallel to each other with a spacing of 3 μm; the thickness of the metal electrodes (2) is 100 nm; an adhesion chromium metal layer with a thickness of 30 nm is added between the metal electrodes (2) and the insulating substrate (1).

[0044] Referring to Figure 2 , the growth experimental device of Re x Mo 1-x S 2 involved in the present invention includes a tube furnace with multiple temperature zones, a quartz tube, two quartz boats, a quartz plate, a mechanical pump for vacuum pumping, and a high-precision flow controller. A constant temperature zone I is arranged upstream of the tube furnace with multiple temperature zones, and a constant temperature zone II is arranged downstream. The temperature of the constant temperature zone I is lower than that of the constant temperature zone II.

[0045] The method for manufacturing the heterojunction photodetector described above includes the following steps:

[0046] S1: Grow two-dimensional Re x Mo 1-x S 2 using a two-temperature-zone tube furnace. Use 2 g of sulfur powder as the sulfur source and place it in the constant temperature zone I upstream of the tube furnace; 1 mg of rhenium trioxide powder and 1 mg of molybdenum trioxide powder are evenly mixed as the rhenium and molybdenum sources and placed in the downstream temperature zone II of the tube furnace. The placement of the sources is as Figure 2 shown;

[0047] S2: Select fluorophlogopite with a specification of 10 mm × 10 mm as the substrate to grow two-dimensional Re x Mo 1-x S 2 , place it in the constant temperature zone II, and the center of the substrate is located 4 cm downstream of the rhenium and molybdenum mixed sources;

[0048] S3: Use a vacuum pump to pump the inside of the tube to a stable air pressure, and at this time the air pressure is about 7.9×10 -2 torr;

[0049] S4: Open the upstream inlet valve and introduce high-purity argon gas (99.999%), and the flow rate is 150 sccm;

[0050] S5: Raise the temperature of the constant temperature zone I from room temperature to 200 °C within 20 minutes, raise the temperature of the constant temperature zone II from room temperature to 750 °C within 20 minutes. The constant temperature time of both the constant temperature zone I and the constant temperature zone II is set to 10 minutes. After the constant temperature ends, the sample is cooled to room temperature with the furnace, and the two-dimensional Re x Mo 1-x S2 Sample;

[0051] S6: Take a clean Petri dish and inject deionized water; Place the sample obtained in step S5 with two-dimensional Re x Mo 1-x S 2 with one side facing up and press it into the deionized water. The two-dimensional Re x Mo 1-x S 2 can then float on the liquid surface of the deionized water, realizing the water-assisted exfoliation of two-dimensional Re x Mo 1-x S 2 from the fluorophlogopite substrate. As Figure 3 shown, A is a physical image of mica after exfoliating two-dimensional Re x Mo 1-x S 2 ; B is a physical image of clean mica; C is a physical image of the exfoliated two-dimensional Re x Mo 1-x S 2 . It can be seen from Figure 3 that the exfoliated two-dimensional Re x Mo 1-x S 2 has a uniform color, regular shape, and no obvious damage. The surface of the mica after exfoliating two-dimensional Re x Mo 1-x S 2 is clean and has no obvious Re x Mo 1-x S 2 residue. Thus, it can be seen that the two-dimensional Re x Mo 1-x S 2 obtained by the present invention can be exfoliated by a simple water-assisted method, with simple operation, and the obtained two-dimensional Re x Mo 1-x S 2 is complete and uniform;

[0052] S7: Take mechanically exfoliated GaSe (with a thickness of 100 nm and an area of 400 μm 2 ), and controllably transfer it to two gold electrodes through a transfer stage. Both ends of the GaSe are electrically connected to the two gold electrodes respectively;

[0053] S8: Dip PMMA into the two-dimensional Re 2 floating on the water surface with an area of about 500 μm x Mo 1-x S 2 , and use the same transfer method as in step S7 to transfer the two-dimensional Re x Mo 1-x S 2Transfer to the two-dimensional GaSe surface to form two-dimensional Re x Mo 1-x S 2 Heterojunction photodetector, the structure of the device is as Figure 1 shown.

[0054] S9: Since deionized water is used in the transfer process, the fabricated device is placed on a 60 °C constant temperature heating plate and heated for 3 minutes at a constant temperature for drying treatment to complete the preparation of the two-dimensional Re x Mo 1-x S 2 heteroepitaxial photodetector.

[0055] The composition of the two-dimensional Re x Mo 1-x S 2 grown in this example was detected using energy-dispersive X-ray spectroscopy, and the results are as Figure 4 shown. The sample mainly contains sulfur atoms, rhenium atoms, and molybdenum atoms, and their atomic percentages are 66%, 20%, and 14% respectively. The total atomic percentage of rhenium atoms and molybdenum atoms is 34%, and the ratio to the S atom percentage is close to 1:2, which is consistent with the chemical ratio of Re x Mo 1-x S 2 . The morphology of the two-dimensional Re x Mo 1-x S 2 was detected using an atomic force microscope, and the results are as Figure 5 shown. After testing, the thickness of the two-dimensional Re x Mo 1-x S 2 is about 2.5 nm, and the number of material layers is approximately 3 layers. The crystal structure of the grown two-dimensional Re x Mo 1-x S 2 was further characterized using a transmission electron microscope, and the results are as Figure 6 shown. It can be observed that the two-dimensional Re x Mo 1-x S 2 has a polycrystalline structure.

[0056] The sensing ability of the two-dimensional Re x Mo 1-x S 2 heterojunction photodetector device was tested, Figure 7 showing the device's detection ability for 450 nm wavelength light. When detecting 450 nm light with a detection power of 0.2 mW, the device responsivity can reach 816.67 A / W, the external quantum efficiency is 225604.17%, the detectivity can reach 1.07×10 10 Jones, and the response time is as low as 20 ms.

[0057] Comparative Example 1

[0058] The difference from Example 1 is only that the two-dimensional Re x Mo 1-x S 2 grown in Example 1 was directly transferred onto two gold electrodes to fabricate a two-dimensional Re x Mo 1-x S 2 photodetector.

[0059] Figure 8 The two-dimensional Re x Mo 1-x S 2 photodetector fabricated in Comparative Example 1. The detection result of the photodetector for light with a wavelength of 450 nm is as follows. It can be calculated that the device responsivity is 0.12 A / W, the external quantum efficiency is 32.23%, and the detectivity is 6.04×10 6 Jones, and the response time is about 8.5 s. It can be seen that compared with the two-dimensional Re x Mo 1-x S 2 photodetector fabricated in Comparative Example 1, the two-dimensional Re x Mo 1-x S 2 heterojunction photodetector fabricated in Example 1 has a high responsivity, a large detectivity, and a fast response speed. It is proved that the two-dimensional Re x Mo 1-x S 2 forming a heterojunction with GaSe can significantly improve the responsivity, detectivity, and response speed of the photodetector.

[0060] Comparative Example 2

[0061] The difference from Example 1 is only that the GaSe provided in Example 1 was directly transferred onto two gold electrodes to fabricate a two-dimensional GaSe photodetector.

[0062] Figure 9 The detection result of the two-dimensional GaSe photodetector prepared in Comparative Example 2 for 450 nm light is as follows. It can be calculated that the device responsivity is 4.254 A / W, the external quantum efficiency is 1175.08%, and the detectivity is 3.77×10 9 Jones, and the response time is about 20 ms. It can be seen that compared with the two-dimensional GaSe photodetector fabricated in Comparative Example 2, the two-dimensional Re x Mo 1-x S 2 hetero-photodetector has a higher responsivity. It is proved that constructing a two-dimensional Re x Mo 1-x S 2Heterogeneous photodetectors have better comprehensive detection capabilities and have important application potential in the preparation of high-performance optical sensors.

[0063] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention and are not intended to limit them; although the present invention has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that they can still modify the technical solutions described in the foregoing embodiments, or perform equivalent replacements for some or all of the technical features; and these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A two-dimensional Re x Mo 1-x S2 heterojunction photodetector, characterized in that The invention comprises an insulating substrate (1), on which two symmetrical metal electrodes (2) are attached, the two metal electrodes (2) are separated by a distance and do not contact each other, a two-dimensional GaSe (3) is placed on the two metal electrodes (2), so that the two ends of the two-dimensional GaSe (3) are respectively electrically connected to the two metal electrodes, and a layer of two-dimensional Re is covered on the two-dimensional GaSe (3). x Mo 1-x S2(4), x=0 ～ 1; 2D Re x Mo 1-x S2(4) and two-dimensional GaSe(3) form a van der Waals heterostructure.

2. A two-dimensional Re according to claim 1 x Mo 1-x S2 heterojunction photodetector, characterized in that The insulating substrate is a silicon wafer with a silicon dioxide insulating layer, and the thickness of the silicon dioxide insulating layer is 100-300nm.

3. A two-dimensional Re according to claim 1 x Mo 1-x S2 heterojunction photodetector, characterized in that The two metal electrodes are gold electrodes, which are kept parallel with a spacing of 1 to 10 μm. An adhesion metal layer, such as a chromium metal layer, is arranged between the gold electrodes and the substrate.

4. A two-dimensional Re according to claim 1 x Mo 1-x S2 heterojunction photodetector, characterized in that The thickness of the two-dimensional GaSe is 1 to 200 nm, and the two-dimensional GaSe is obtained by mechanical exfoliation.

5. A two-dimensional Re according to claim 1 x Mo 1-x S2 heterojunction photodetector, characterized in that 2D Re x Mo 1-x S2 thickness is less than 10nm ， 2D Re x Mo 1-x S2 is obtained by chemical vapor deposition, liquid phase exfoliation or magnetron sputtering.

6. A two-dimensional Re according to claim 5 x Mo 1-x The method for preparing an S2 heterojunction photodetector is characterized in that: Growth of two-dimensional Re by low pressure chemical vapor deposition x Mo 1-x S2 includes the following steps: S1: Growth of 2D Re using a dual temperature zone tubular furnace x Mo 1-x S2, using sulfur powder as the sulfur source, placed in the upstream constant temperature zone I of the tube furnace; using rhenium trioxide powder and molybdenum trioxide powder uniformly mixed as the rhenium and molybdenum sources, placed in the downstream constant temperature zone II of the tube furnace; S2: Fluorophorite as substrate for the growth of two-dimensional Re x Mo 1-x S2, placed 1 to 10 cm downstream of the rhenium and molybdenum sources in constant temperature zone II; S3: Use a vacuum pump to reduce the pressure in the tube to 1×10 -2 ~5×10 -1 torr, wait for the air pressure to stabilize; S4: Open the upstream gas inlet valve and introduce high-purity argon gas at a flow rate of 20 to 300 sccm; S5: Raise the temperature of constant temperature zone I to 120-300°C and constant temperature zone II to 600-850°C; the growth time is 5-50 minutes; after the growth is completed, the sample is cooled to room temperature with the furnace, and the two-dimensional Re x Mo 1-x S2 sample.

7. A two-dimensional Re according to claim 6 x Mo 1-x S2 heterojunction photodetector, characterized in that The masses of the sulfur powder, the rhenium trioxide powder and the molybdenum trioxide powder are 0.5-5g: 0.5-3mg: 0.5-3mg.

8. A two-dimensional Re according to claim 6 x Mo 1-x S2 heterojunction photodetector, characterized in that Using water-assisted method, two-dimensional Re x Mo 1-x S2 is peeled off from the fluorophlogopite substrate to achieve two-dimensional Re x Mo 1-x S2 is separated from the growth substrate fluorophlogopite.

9. A two-dimensional Re according to claim 6 x Mo 1-x S2 heterojunction photodetector, characterized in that In step S1 , rhenium trioxide powder as a rhenium source is replaced with ammonium perrhenate.

10. A two-dimensional Re according to claim 1 x Mo 1-x S2 heterojunction photodetector, characterized in that PDMS controllable transfer technology was used to transfer two-dimensional GaSe and two-dimensional Re x Mo 1-x S2 is placed at the target position.

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